JP5179766B2 - 半導体発光装置およびその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 115
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 193
- 239000002184 metal Substances 0.000 claims abstract description 193
- 230000004888 barrier function Effects 0.000 claims abstract description 63
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- 229910052763 palladium Inorganic materials 0.000 claims abstract description 26
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 71
- 229910052710 silicon Inorganic materials 0.000 claims description 71
- 239000010703 silicon Substances 0.000 claims description 71
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 41
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- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 46
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 32
- 238000010438 heat treatment Methods 0.000 description 21
- 229910052786 argon Inorganic materials 0.000 description 16
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- 230000007423 decrease Effects 0.000 description 13
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
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- 239000010949 copper Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- KHYBPSFKEHXSLX-UHFFFAOYSA-N iminotitanium Chemical compound [Ti]=N KHYBPSFKEHXSLX-UHFFFAOYSA-N 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 7
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
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- 229910017944 Ag—Cu Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910015363 Au—Sn Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
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- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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Description
前記金属膜には、前記所定の基板に所定物質が拡散するのを防止するためのバリアメタル層と、前記バリアメタル層上に直に形成されたメタル層と、前記メタル層上に直に形成された反射層とが設けられ、
前記反射層は、前記半導体発光素子から出射された光に対する反射面としての機能を有しており、
前記メタル層は、TiまたはPdで形成され、
前記バリアメタル層はNiであり、
前記反射層は、AgまたはAg合金であり、
前記反射層上には前記半導体発光素子とワイヤがボンディングされていることを特徴とする半導体発光装置である。
(b) 前記バリアメタル層上に直にTiまたはPdを材料としたメタル層を形成する工程と、
(c) 前記メタル層の上に直にAgまたはAg合金を材料とした反射層を形成する工程と、
(d) 前記反射層に半導体発光素子およびワイヤをボンディングする工程と、
を有していることを特徴とする半導体発光装置の製造方法である。
前記金属膜には、前記所定の基板に所定物質が拡散するのを防止するためのバリアメタル層と、前記バリアメタル層上に直に形成されたメタル層と、前記メタル層上に直に形成された反射層とが設けられ、
前記反射層は、前記半導体発光素子から出射された光に対する反射面としての機能を有しており、
前記メタル層は、TiまたはPdで形成され、
前記バリアメタル層はNiであり、
前記反射層は、AgまたはAg合金であり、
前記反射層上には前記半導体発光素子とワイヤがボンディングされているので、大気加熱による金属膜(反射層)の反射率低下を防止するとともに、バリアメタル層がNiで形成される場合に半導体発光素子のダイボンディングの際にバリアメタル層のNiが反射層に拡散して半導体発光素子(例えばLED素子)のワイヤボンディングの接合性が低下する事態が生ずるのを防止することができる。
前記金属膜5には、前記所定の基板3aに所定物質が拡散するのを防止するためのバリアメタル層3dと、前記バリアメタル層3d上に形成されたメタル層3eと、前記メタル層3e上に形成された反射層3fとが設けられ、
前記反射層3fは、前記半導体発光素子4から出射された光に対する反射面としての機能を有しており、
前記メタル層3eは、TiまたはPdで形成されている。
(a)所定の基板(例えばシリコン基板)3aの表面に絶縁膜(例えば酸化シリコン膜)3bを形成する工程と、
(b)前記絶縁膜3b上にTiまたはTi合金(具体的には、例えばTi−Ni合金)を材料とした密着層3cを形成する工程と、
(c)前記密着層3c上にNiを材料としたバリアメタル層3dを形成する工程と、
(d)前記バリアメタル層3d上にTiまたはPdを材料としたメタル層3eを形成する工程と、
(e)前記メタル層3e上にAgまたはAg合金を材料とした反射層3fを形成する工程と、
(f)前記反射層3fに半導体発光素子4を電気的に接続する工程と、
によって作製することができる。
(a−1)シリコン基板3aに異方性エッチングを行うことにより、(100)面の底面と4つの(111)面の傾斜側面からなるホーンを形成する工程と、
(a−2)前記ホーンが形成されたシリコン基板3aの表面に絶縁膜3bを形成する工程と、
を含むものにすることができる。
(a−1)シリコン基板3aに異方性エッチングを行うことにより、(100)面の底面と4つの(111)面の傾斜側面からなるホーンを形成する工程と、
(a−2)前記ホーンの傾斜側面を等方性エッチングして該ホーンの角度に丸みを持たせる工程と、
(a−3)前記ホーンが形成されたシリコン基板3aの表面に絶縁膜3bを形成する工程と、
を含むものにすることができる。
サンプルB Ag−Bi−Nd 合金膜 (Bi原子%=0.14)
サンプルC Ti/Ag−Bi−Nd 合金膜 (Bi原子%=0.14、Ti膜厚:0.05μm)
サンプルD Ti/Ag−Bi−Nd 合金膜 (Bi原子%=0.22、Ti膜厚:0.05μm)
サンプルE Ti/Ag−Bi−Nd 合金膜 (Bi原子%=0.24、Ti膜厚:0.05μm)
上記5種類をそれぞれ成膜したサンプルの初期垂直反射率をn&kアナライザを用いて測定した。
3b 絶縁膜
3c 密着層
3d バリアメタル層
3e メタル層
3f 反射層
3g Tiコート層
4 半導体発光素子
22 ホーン
Claims (5)
- 所定の基板上に形成された金属膜と、半導体発光素子とを有し、
前記金属膜には、前記所定の基板に所定物質が拡散するのを防止するためのバリアメタル層と、前記バリアメタル層上に直に形成されたメタル層と、前記メタル層上に直に形成された反射層とが設けられ、
前記反射層は、前記半導体発光素子から出射された光に対する反射面としての機能を有しており、
前記メタル層は、TiまたはPdで形成され、
前記バリアメタル層はNiであり、
前記反射層は、AgまたはAg合金であり、
前記反射層上には前記半導体発光素子とワイヤがボンディングされていることを特徴とする半導体発光装置。 - 請求項1記載の半導体発光装置において、前記Ag合金は、Bi,Au,Pd,Cu,Pt,Ndの中の少なくとも1種を含有する合金であることを特徴とする半導体発光装置。
- 請求項1記載の半導体発光装置において、前記バリアメタル層がNiで形成され、前記反射層がAgまたはAg合金で形成され、前記メタル層がTiで形成される場合、Tiで形成されたメタル層は、厚さが0.35nm乃至200nmの範囲のものとなっていることを特徴とする半導体発光装置。
- 請求項1記載の半導体発光装置において、前記バリアメタル層がNiで形成され、前記反射層がAgまたはAg合金で形成され、前記メタル層がPdで形成される場合、前記Pdで形成されたメタル層は、厚さが1nm乃至1000nmの範囲のものとなっていることを特徴とする半導体発光装置。
- (a) シリコン基板上にNiを材料としたバリアメタル層を形成する工程と、
(b) 前記バリアメタル層上に直にTiまたはPdを材料としたメタル層を形成する工程と、
(c) 前記メタル層の上に直にAgまたはAg合金を材料とした反射層を形成する工程と、
(d) 前記反射層に半導体発光素子およびワイヤをボンディングする工程と、
を有していることを特徴とする半導体発光装置の製造方法。
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