JP2007012993A - チップ型半導体発光素子 - Google Patents
チップ型半導体発光素子 Download PDFInfo
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- JP2007012993A JP2007012993A JP2005193861A JP2005193861A JP2007012993A JP 2007012993 A JP2007012993 A JP 2007012993A JP 2005193861 A JP2005193861 A JP 2005193861A JP 2005193861 A JP2005193861 A JP 2005193861A JP 2007012993 A JP2007012993 A JP 2007012993A
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- emitting device
- light emitting
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 136
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 26
- 230000017525 heat dissipation Effects 0.000 abstract description 32
- 239000000853 adhesive Substances 0.000 abstract description 5
- 230000001070 adhesive effect Effects 0.000 abstract description 5
- 230000020169 heat generation Effects 0.000 abstract description 4
- 230000005855 radiation Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 42
- 229920005989 resin Polymers 0.000 description 32
- 239000011347 resin Substances 0.000 description 32
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- 238000006243 chemical reaction Methods 0.000 description 15
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 150000001875 compounds Chemical class 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 238000002310 reflectometry Methods 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 239000010931 gold Substances 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910021478 group 5 element Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 150000004645 aluminates Chemical class 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000004956 Amodel Substances 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910004349 Ti-Al Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910004692 Ti—Al Inorganic materials 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- -1 zinc oxide (ZnO) compound Chemical class 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Led Device Packages (AREA)
Abstract
【解決手段】 基板1の表面の両端部に一対の端子電極11、12が設けられ、その基板1上の第1端子電極11上にLEDチップ2が設けられ、そのLEDチップ2の一対の電極が一対の端子電極11、12と接続手段3(導電性接着剤31、ワイヤ32)により電気的に接続され、基板1の表面上周囲に反射ケース4が設けられている。この基板1および反射ケース4が共にアルミナ焼結体を主材料とする材料により形成されている。
【選択図】 図1
Description
2 LEDチップ
3 接続手段
4 反射ケース
5 封止樹脂層
6 放熱用スルーホール
7 ガラスバインダ
11 第1端子電極
12 第2端子電極
Claims (3)
- 基板と、該基板の一面の両端部に電気的に分離して設けられる一対の端子電極と、前記基板上の前記一面に直接または前記一対の端子電極の一方の上に設けられる発光素子チップと、該発光素子チップの一対の電極を前記一対の端子電極と電気的に接続する接続手段と、前記基板の一面上周囲に設けられる反射ケースとを具備し、前記基板および反射ケースが共にアルミナ焼結体を主材料とする材料により形成されてなるチップ型半導体発光素子。
- 前記反射ケースがポーラスなアルミナ焼結体により形成されてなる請求項1記載のチップ型半導体発光素子。
- 前記基板の少なくとも発光素子チップの近傍に貫通孔が設けられ、該貫通孔内に前記基板よりも熱伝導率の大きい材料が埋め込まれてなる請求項1または2記載のチップ型半導体発光素子。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005193861A JP4773755B2 (ja) | 2005-07-01 | 2005-07-01 | チップ型半導体発光素子 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005193861A JP4773755B2 (ja) | 2005-07-01 | 2005-07-01 | チップ型半導体発光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007012993A true JP2007012993A (ja) | 2007-01-18 |
JP4773755B2 JP4773755B2 (ja) | 2011-09-14 |
Family
ID=37751074
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005193861A Expired - Fee Related JP4773755B2 (ja) | 2005-07-01 | 2005-07-01 | チップ型半導体発光素子 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4773755B2 (ja) |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008177445A (ja) * | 2007-01-22 | 2008-07-31 | Ngk Spark Plug Co Ltd | 配線基板 |
JP2008277716A (ja) * | 2007-03-30 | 2008-11-13 | Tdk Corp | バリスタ及び発光装置 |
JP2009094262A (ja) * | 2007-10-09 | 2009-04-30 | Toyoda Gosei Co Ltd | 発光装置の製造方法 |
JP2009141318A (ja) * | 2007-07-30 | 2009-06-25 | Avago Technologies Ecbu Ip (Singapore) Pte Ltd | 高められた熱伝導度を有するled光源 |
WO2009082011A1 (ja) * | 2007-12-26 | 2009-07-02 | Kyocera Corporation | 発光装置および照明装置 |
EP2237330A1 (en) * | 2007-12-25 | 2010-10-06 | Kyocera Corporation | Light emitting device |
JP2010283253A (ja) * | 2009-06-08 | 2010-12-16 | Hitachi Kyowa Engineering Co Ltd | 発光装置及び発光装置用基板 |
JP2011023767A (ja) * | 2006-01-30 | 2011-02-03 | Kyocera Corp | 発光装置および照明装置 |
JPWO2009063805A1 (ja) * | 2007-11-13 | 2011-03-31 | 株式会社村田製作所 | 蓄電機能付き熱電発電装置 |
JP2011119248A (ja) * | 2009-11-06 | 2011-06-16 | Mitsubishi Electric Corp | 発光装置及び照明装置及び色変換器 |
CN102544318A (zh) * | 2012-01-04 | 2012-07-04 | 歌尔声学股份有限公司 | 发光二极管装置 |
EP2492983A2 (en) * | 2009-10-21 | 2012-08-29 | LG Innotek Co., Ltd. | Light emitting device and light unit using same |
JP2013046072A (ja) * | 2011-08-22 | 2013-03-04 | Lg Innotek Co Ltd | 発光素子パッケージ、光源モジュール及びこれを含む照明システム |
JP2014140072A (ja) * | 2014-04-16 | 2014-07-31 | Rohm Co Ltd | 発光素子モジュール |
US9312462B2 (en) | 2010-04-30 | 2016-04-12 | Rohm Co., Ltd. | LED module |
JP2019067841A (ja) * | 2017-09-29 | 2019-04-25 | 日機装株式会社 | 半導体発光素子及び発光装置 |
USRE48858E1 (en) | 2011-08-22 | 2021-12-21 | Suzhou Lekin Semiconductor Co., Ltd. | Light emitting device package and light unit |
Citations (5)
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JPH09307238A (ja) * | 1996-05-20 | 1997-11-28 | Kyocera Corp | 多層回路基板 |
JPH11346020A (ja) * | 1998-05-29 | 1999-12-14 | Kyocera Corp | 固体レーザー発振器 |
JP2004152952A (ja) * | 2002-10-30 | 2004-05-27 | Kyocera Corp | 発光素子収納用パッケージおよび発光装置 |
JP2005012155A (ja) * | 2003-05-26 | 2005-01-13 | Matsushita Electric Works Ltd | 発光装置 |
JP2006287132A (ja) * | 2005-04-04 | 2006-10-19 | Kyoritsu Elex Co Ltd | 発光ダイオード用パッケージ及び発光ダイオード |
-
2005
- 2005-07-01 JP JP2005193861A patent/JP4773755B2/ja not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH09307238A (ja) * | 1996-05-20 | 1997-11-28 | Kyocera Corp | 多層回路基板 |
JPH11346020A (ja) * | 1998-05-29 | 1999-12-14 | Kyocera Corp | 固体レーザー発振器 |
JP2004152952A (ja) * | 2002-10-30 | 2004-05-27 | Kyocera Corp | 発光素子収納用パッケージおよび発光装置 |
JP2005012155A (ja) * | 2003-05-26 | 2005-01-13 | Matsushita Electric Works Ltd | 発光装置 |
JP2006287132A (ja) * | 2005-04-04 | 2006-10-19 | Kyoritsu Elex Co Ltd | 発光ダイオード用パッケージ及び発光ダイオード |
Cited By (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012212925A (ja) * | 2006-01-30 | 2012-11-01 | Kyocera Corp | 発光装置 |
JP2012212926A (ja) * | 2006-01-30 | 2012-11-01 | Kyocera Corp | 発光装置 |
JP2011023767A (ja) * | 2006-01-30 | 2011-02-03 | Kyocera Corp | 発光装置および照明装置 |
JP2008177445A (ja) * | 2007-01-22 | 2008-07-31 | Ngk Spark Plug Co Ltd | 配線基板 |
JP2008277716A (ja) * | 2007-03-30 | 2008-11-13 | Tdk Corp | バリスタ及び発光装置 |
JP2009141318A (ja) * | 2007-07-30 | 2009-06-25 | Avago Technologies Ecbu Ip (Singapore) Pte Ltd | 高められた熱伝導度を有するled光源 |
JP2009094262A (ja) * | 2007-10-09 | 2009-04-30 | Toyoda Gosei Co Ltd | 発光装置の製造方法 |
JPWO2009063805A1 (ja) * | 2007-11-13 | 2011-03-31 | 株式会社村田製作所 | 蓄電機能付き熱電発電装置 |
EP2237330A1 (en) * | 2007-12-25 | 2010-10-06 | Kyocera Corporation | Light emitting device |
EP2237330A4 (en) * | 2007-12-25 | 2013-03-20 | Kyocera Corp | LIGHT EMITTING DEVICE |
WO2009082011A1 (ja) * | 2007-12-26 | 2009-07-02 | Kyocera Corporation | 発光装置および照明装置 |
US8529089B2 (en) | 2007-12-26 | 2013-09-10 | Kyocera Corporation | Light emitting device and illumination device |
JP5259627B2 (ja) * | 2007-12-26 | 2013-08-07 | 京セラ株式会社 | 発光装置および照明装置 |
JP2010283253A (ja) * | 2009-06-08 | 2010-12-16 | Hitachi Kyowa Engineering Co Ltd | 発光装置及び発光装置用基板 |
EP2492983A2 (en) * | 2009-10-21 | 2012-08-29 | LG Innotek Co., Ltd. | Light emitting device and light unit using same |
EP2492983A4 (en) * | 2009-10-21 | 2014-12-03 | Lg Innotek Co Ltd | LIGHT-EMITTING DEVICE AND LIGHT UNIT THEREWITH |
JP2011119248A (ja) * | 2009-11-06 | 2011-06-16 | Mitsubishi Electric Corp | 発光装置及び照明装置及び色変換器 |
US9312462B2 (en) | 2010-04-30 | 2016-04-12 | Rohm Co., Ltd. | LED module |
JP2013046072A (ja) * | 2011-08-22 | 2013-03-04 | Lg Innotek Co Ltd | 発光素子パッケージ、光源モジュール及びこれを含む照明システム |
USRE48858E1 (en) | 2011-08-22 | 2021-12-21 | Suzhou Lekin Semiconductor Co., Ltd. | Light emitting device package and light unit |
CN102544318A (zh) * | 2012-01-04 | 2012-07-04 | 歌尔声学股份有限公司 | 发光二极管装置 |
JP2014140072A (ja) * | 2014-04-16 | 2014-07-31 | Rohm Co Ltd | 発光素子モジュール |
JP2019067841A (ja) * | 2017-09-29 | 2019-04-25 | 日機装株式会社 | 半導体発光素子及び発光装置 |
JP7112190B2 (ja) | 2017-09-29 | 2022-08-03 | 日機装株式会社 | 発光装置 |
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