JP4004514B2 - 白色半導体発光素子 - Google Patents
白色半導体発光素子 Download PDFInfo
- Publication number
- JP4004514B2 JP4004514B2 JP2005179659A JP2005179659A JP4004514B2 JP 4004514 B2 JP4004514 B2 JP 4004514B2 JP 2005179659 A JP2005179659 A JP 2005179659A JP 2005179659 A JP2005179659 A JP 2005179659A JP 4004514 B2 JP4004514 B2 JP 4004514B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- pair
- light emitting
- resin layer
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
2 LEDチップ
3 接続手段
4 第1の樹脂層
4a 赤色変換部材
5 第2の樹脂層
5a 緑色変換部材
11 第1の電極膜
12 第2の電極膜
Claims (1)
- 両端部に一対の電極膜が形成される絶縁性基板と、該絶縁性基板上にマウントされる青色または紫外の光を発光する発光素子チップと、該発光素子チップの一対の電極を前記絶縁性基板に形成される一対の電極膜とそれぞれ電気的に接続される接続手段と、前記発光素子チップが発光する青色または紫外の光を赤色に変換する赤色変換部材が混入されたモールド樹脂からなり、前記発光素子チップおよび前記接続手段の部分を被覆するようにモールド成形された第1の樹脂層と、前記発光素子チップにより発光する青色または紫外の光を緑色に変換する緑色変換部材が混入されたモールド樹脂からなり、前記第1の樹脂層の周りを被覆するようにモールド成形された第2の樹脂層とを有し、前記発光素子チップに形成される一対の電極の1つが該チップの裏面側に形成されることにより、前記接続手段の一方は前記発光素子チップが前記一対の電極膜の一方の上にマウントされることによる接着剤であり、前記接続手段の他方は、前記発光素子チップの表面に設けられる電極と前記一対の電極膜の他方との間にワイヤボンディングされるワイヤであり、前記第1の樹脂層は、前記一対の電極膜の他方と接続されるワイヤの部分が厚く、前記一対の電極膜の一方の側が薄くなるように形成され、前記第2の樹脂層は前記ワイヤのある部分が薄く、前記一対の電極膜の一方の側が厚くなるように形成されてなる白色半導体発光素子。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005179659A JP4004514B2 (ja) | 2005-06-20 | 2005-06-20 | 白色半導体発光素子 |
EP06766903A EP1895600A1 (en) | 2005-06-20 | 2006-06-19 | White semiconductor light emitting element and manufacturing method thereof |
KR1020077029651A KR20080025687A (ko) | 2005-06-20 | 2006-06-19 | 백색 반도체 발광 소자 및 그 제법 |
US11/922,508 US20090236622A1 (en) | 2005-06-20 | 2006-06-19 | White Semiconductor Light Emitting Device and Method for Manufacturing the Same |
CN 200680022297 CN101203964A (zh) | 2005-06-20 | 2006-06-19 | 白色半导体发光元件及其制造方法 |
TW095121944A TW200739942A (en) | 2005-06-20 | 2006-06-19 | White semiconductor light emitting element and manufacturing method thereof |
PCT/JP2006/312239 WO2006137359A1 (ja) | 2005-06-20 | 2006-06-19 | 白色半導体発光素子およびその製法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005179659A JP4004514B2 (ja) | 2005-06-20 | 2005-06-20 | 白色半導体発光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006352037A JP2006352037A (ja) | 2006-12-28 |
JP4004514B2 true JP4004514B2 (ja) | 2007-11-07 |
Family
ID=37647525
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005179659A Expired - Fee Related JP4004514B2 (ja) | 2005-06-20 | 2005-06-20 | 白色半導体発光素子 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP4004514B2 (ja) |
CN (1) | CN101203964A (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010267900A (ja) * | 2009-05-18 | 2010-11-25 | Citizen Holdings Co Ltd | Led光源装置の製造方法 |
JPWO2013038649A1 (ja) * | 2011-09-13 | 2015-03-23 | 株式会社小糸製作所 | 発光モジュール |
JP6326830B2 (ja) * | 2013-02-28 | 2018-05-23 | 日亜化学工業株式会社 | 発光装置及びそれを備える照明装置 |
WO2018080061A2 (ko) * | 2016-10-25 | 2018-05-03 | 서울반도체주식회사 | 발광 다이오드 패키지 및 그것을 갖는 디스플레이 장치 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3541709B2 (ja) * | 1998-02-17 | 2004-07-14 | 日亜化学工業株式会社 | 発光ダイオードの形成方法 |
KR100691143B1 (ko) * | 2003-04-30 | 2007-03-09 | 삼성전기주식회사 | 다층 형광층을 가진 발광 다이오드 소자 |
-
2005
- 2005-06-20 JP JP2005179659A patent/JP4004514B2/ja not_active Expired - Fee Related
-
2006
- 2006-06-19 CN CN 200680022297 patent/CN101203964A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
CN101203964A (zh) | 2008-06-18 |
JP2006352037A (ja) | 2006-12-28 |
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