TWI449201B - 氮化銦鎵發光二極體之高反射率ｐ接觸 - Google Patents

氮化銦鎵發光二極體之高反射率ｐ接觸 Download PDF

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Publication number
TWI449201B
TWI449201B TW094111006A TW94111006A TWI449201B TW I449201 B TWI449201 B TW I449201B TW 094111006 A TW094111006 A TW 094111006A TW 94111006 A TW94111006 A TW 94111006A TW I449201 B TWI449201 B TW I449201B
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Taiwan
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layer
contact
flip
emitting diode
light emitting
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TW094111006A
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English (en)
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TW200601592A (en
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Hari S Venugopalan
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Gelcore Llc
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    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

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Description

氮化銦鎵發光二極體之高反射率P接觸
本申請案係關於電子技術。其尤其係關於用於發光應用的覆晶黏合第III族氮化物發光二極體，且將藉由其特定參考描述本申請案。然而，本申請案亦發現連同其他類型之覆晶黏合發光二極體的應用，及在諸如垂直腔表面發射雷射(VCSEL)之其他光電子裝置之晶粒黏合中的應用。
在覆晶安裝組態中，將具有透光基板及前側電極的發光二極體面向下黏合至座架的黏合凸塊，意即，使磊晶層接近於座架並使透光基板遠離座架。覆晶配置具有許多優點，包括歸因於前側作用層之接近於散熱基板的改良的散熱及電極遮蔽損耗之消除。
覆晶發光二極體之p型電極執行幾項任務，包括提供與作用層的歐姆接觸，有效地反射光以改良光提取，及提供用以在裝置運作過程中自作用層移除熱的熱路徑。
與要求高透明、低電阻接觸的習知氮化銦鎵發光二極體相比，覆晶氮化銦鎵發光二極體要求高反射、與p－GaN的低電阻接觸。通常，使用多層金屬堆疊以同時達到高反射率及低電阻。此堆疊的其中一層形成歐姆接觸。然而，大多數與p－GaN的金屬歐姆接觸傾向於為不良的反射器。結果，需要自具有一優良反射率的材料中選擇堆疊中的另一層以用於重定向自作用區域發射至基板的光。金屬堆疊的總反射率被歐姆金屬的反射率折衷了。相應地，降低了晶片的光功率。可藉由使用一金屬反射器將光吸收減少至一最小值，該金屬反射器亦以最小電損耗將電流注入p－GaN。一此反射器為銀。然而，銀具有不良的與p－GaN的黏著。
需要使用一於p接觸/p－GaN接面處之具有良好黏著及低電阻的反射p接觸。本發明提供一種克服以上提及之問題及其它問題之新的p接觸設計。
根據本申請案之一態樣，揭示了一種覆晶發光二極體裝置。該發光二極體裝置包括有包括一頂部接觸層的半導體層；一用於將發光二極體晶粒與黏合襯墊覆晶黏合及電連接的p接觸。該p接觸包括多層，該等多層包括：一安置在與頂部接觸層相鄰之處的反射/傳導層，及一包括安置在與該反射/傳導層相鄰之處之至少一層的黏合堆疊。該黏合堆疊適於將發光二極體晶粒覆晶黏合至黏合襯墊。
根據本應用之另一態樣，揭示了一種具有高反射率及低電阻p接觸之覆晶發光二極體的製造方法。包括一接觸層的半導體層沉積於一基板上。一金屬堆疊沉積於該接觸層上。該金屬堆疊包括一反射/傳導層，及安置於該反射/傳導層上的至少一黏合層。
本申請案之一優點在於與p－GaN層之p接觸的高反射率及低接觸電阻率。
本申請案之另一優點在於該發光二極體的優良的插座效率(wall－plug efficiency)。
藉由閱讀及理解本說明書，本申請案的許多優點及益處對於彼等普通熟習此項技術者將變得顯而易見。
參看圖1，一覆晶發光二極體裝置10包括一以一覆晶方式安裝至一座架14的發光二極體晶粒12。該發光二極體晶粒12包括一透光基板20，其較佳為一大體上透明的藍寶石或碳化矽基板。藉由有機金屬化學氣體沉積（亦被稱為有機金屬氣體磊晶法及類似名稱）、分子束磊晶法、化學束磊晶法，或另一磊晶薄膜沉積技術於該透光基板20上形成複數個半導體層22。自諸如氮化鎵層、氮化鋁層、氮化銦層，及其三元及四元合金之第III族氮化物層中選擇該等半導體層22。
當通電時半導體層22界定發射光的發光結構。在一具體實施例中，半導體層22包括一n型氮化鎵層或n－GaN層24、一作用區域26，及一頂部接觸層28。較佳地，作用區域26包括一單層的氮化銦、氮化鎵、Inx Ga1 － x N(0<x<1)或其類似物。視需要，作用區域26可包括複數個層，該等複數個層界定（例如）一單或多量子井或超晶格作用區域。基於第III族氮化物之結構通常發射藍色至紫外線光譜範圍的光，特定發射光譜依該層組合物、厚度、某些雜質之存在、及其它特徵而定。視需要，半導體層22可包括額外層，諸如Alx Ga1 － x N包層，電流散佈層，用於促進磊晶成長的緩衝層，或其類似物。選擇半導體層厚度、材料、層序列、摻雜劑及摻雜含量，及其類似物用於特定的發光應用，例如發射可見光至紅外光譜附近光的第III族磷化物材料及第III族砷化物材料。視需要，該裝置晶粒可為另一類型之光電子裝置，諸如一垂直腔表面發射雷射(VCSEL)。
繼續參看圖1，於頂部接觸層28上形成至少一p電極或p接觸30。該p接觸30較佳為一多層堆疊，包括一反射/傳導或鋁層32，及一黏合堆疊34。在一單沉積過程或在多沉積過程中沉積鋁層32及黏合堆疊34。可採用大體上任何適合的薄膜沉積技術或技術組合，諸如熱蒸發、電子束蒸發、濺鍍、電鍍，或其類似物。隨後，界定一n型接觸36並視需要藉由一具有窗的介電層(未圖示)來保護該裝置，電極30、36通過該等窗曝露。較佳地，該n接觸36的反射率低於50%。
在圖1的實施例中，頂部接觸層28為一p-GaN層。在一製造過程中，微影處理半導體層22以移除作用區域26及p型氮化鎵層28之部分從而界定裝置台。通常，鋁形成與p-GaN層的高電阻接觸。為減少與p-GaN層之鋁p接觸30的電阻，用鹽酸(HCl)或其他手段清洗及食人魚(piranha)蝕刻p-GaN層，例如接觸層28。而後微影圖案化該p-GaN層，之後在接觸層28之頂部上沉積p接觸30，且之後為金屬起離。由於用HCl清洗p-GaN層，因此在鋁層32與p-GaN層28之間之界面40處的電壓降保持在一最小值。
基於可製造性，較佳地以晶圓級過程執行以上製造過程。在250℃的退火之後，將晶圓分割為分離的個別晶粒12，該等晶粒12覆晶黏合至子座架或其他支撐架14。應將 隨後之處理限制於約250℃或以下的溫度，以避免鋁層32的熱降解。
繼續參看圖1，黏合堆疊34較佳地為一多層金屬堆疊，包括一黏著層50、一擴散阻斷層52，及一黏合層54。黏著層50較佳為鈦，而黏合層54較佳為金，其為各種黏合方法提供了良好的黏合表面。對於熱聲波黏合、熱壓黏合，或其類似物，擴散阻斷層52較佳為一鉑層。對於焊接黏合，擴散阻斷層52較佳為鎳。當然，亦涵蓋：黏合堆疊34可為一單層、雙層，或三層以上，其可包括諸如金、鈦、鎳、鉑，或其他之一或多種材料。
將覆晶發光二極體晶粒12黏合至橫向對準接觸30、36的黏合襯墊56、58。藉由熱聲波黏合至塗布金之銅凸塊或其類似物，由焊接凸塊60、62中之一個執行該黏合。視需要，緊固p型電極30的黏合凸塊60可為一橫向分佈的黏合凸塊陣列，以符合p型接觸30之區域。
參看圖2，於另一實施例p接觸30'中，其包含一沉積於頂部接觸層28之上之穿隧接面66，該穿隧接面包含一沉積於頂部接觸層28之上之p-GaN層68及一沉積於p-GaN層68之上之n型層70。層68及70較佳為氮化鎵層。。一n-GaN層72係沉積於穿隧接面66之上，而鋁層32係形成於層72之上，黏合堆疊34可選擇地形成於鋁層32之上。p接觸30'係依下述方式運作。穿隧接面66於頂部接觸層28與層72之間提供較佳係準歐姆之電氣通信，由於鋁具備低功函數，鋁層32與層72間之接觸電阻係相對較低，因而p接觸30'整體而 言展現了改善之電氣特性。
參看圖3，於另一實施例p接觸30"中，其包含一沉積於頂部接觸層28之上之p-InGaN層80。鋁層32係形成於p-InGaN層80之上，而黏合堆疊34係如前述可選擇地形成於鋁層32之上。p接觸30"係依下述方式運作。相對於將鋁直接沉積於氮化鎵上，具較低帶隙之p-InGaN層80可減少p-InGaN層80與鋁層32間之電子屏障，而減低之電子屏障可於頂部接觸層28與鋁層32之間提供更多之準歐姆之電氣通信，因而p接觸30"整體而言展現了改善之電氣特性。無論是在p接觸30'或p接觸30"中，在 形成鋁層32之前，可選擇性地利用鹽酸(HCl)或食人魚(piranha)蝕刻進行表面處理以進一步提升p接觸30之電氣特性。
參看圖4至5，已用實驗的方法比較一具有習知基於鎳/鋁之p接觸的白色發光二極體燈與用基於鋁的p接觸代替基於鎳/鋁的p接觸之相同的發光二極體燈。如圖4中所示，經由以鋁p接觸代替鎳/鋁p接觸，白色發光二極體的亮度增加了50%。
再次參看圖5，上述清洗步驟的使用將歸因於電阻的裝置電壓之增加限制於約0.3V。總體上，發光效率(輸出流明/輸入電力)平均增加了34%。
已參考較佳實施例描述了本申請案。顯然，藉由閱讀及理解先前詳細描述，其他人將想到修正及替代方案。意欲將本申請案解釋為包括所有該等修正及替代方案，只要它們屬於附加之申請專利範圍或其均等物的範疇內。
10‧‧‧覆晶發光二極體裝置
12‧‧‧發光二極體晶粒
14‧‧‧座架
20‧‧‧基板
22‧‧‧半導體層
24‧‧‧n型層
26‧‧‧作用區域
28‧‧‧頂部接觸層
30、30'、30"‧‧‧p接觸
32‧‧‧鋁層
34‧‧‧黏合堆疊
36‧‧‧n接觸
40‧‧‧界面
50‧‧‧黏著層
52‧‧‧擴散障壁層、擴散阻斷層
54‧‧‧黏合層
56、58‧‧‧黏合襯墊
60、62‧‧‧焊接凸塊
66‧‧‧穿隧接面
68‧‧‧p-GaN層
70‧‧‧n型層
72‧‧‧p-GaN層
80‧‧‧p-InGaN層
圖1展示了一覆晶發光二極體的橫截面圖；圖2展示了一覆晶發光二極體的橫截面圖，其中將半導體層端接至n-GaN層；圖3展示了一覆晶發光二極體的橫截面圖，其中將半導體層端接至p-InGaN層；圖4展示了具有基於鎳/鋁之接觸(左手邊)之白色發光二極體及，對於相同發光二極體，具有鋁接觸(右手邊)的晶圓上亮度量測；及 圖5展示了具有基於鎳/鋁之接觸(左手邊)之白色發光二極體及，對於相同發光二極體，具有鋁接觸(右手邊)的裝置電壓量測。
10．．．覆晶發光二極體裝置
12．．．發光二極體晶粒
14．．．座架
20．．．基板
22．．．半導體層
24．．．n型層
26．．．作用區域
28．．．頂部接觸層
30．．．p接觸、電極
32．．．反射/傳導層、鋁層
34．．．黏合堆疊
36．．．n接觸、電極
40．．．界面
50．．．黏著層
52．．．擴散障壁層、擴散阻斷層
54．．．黏合層
56、58．．．黏合襯墊
60、62．．．焊接凸塊

Claims (20)

  1. 一種覆晶發光二極體裝置(10)，其包含：包括一頂部接觸層(28)的半導體層(22)；一用於將一發光二極體晶粒(12)與黏合襯墊(56、58)覆晶黏合及電連接的p接觸(30)，該p接觸(30)包括多層，該等多層包括：一安置在與該頂部接觸層(28)相鄰之處的反射/傳導層(32)，及一包括安置在與該反射/傳導層(32)相鄰之處之至少一層的黏合堆疊(34)，該黏合堆疊(34)適於將該發光二極體晶粒(12)覆晶黏合至該黏合襯墊(58)；其中一界面層可減少該頂部接觸層與該p接觸間之接觸電阻。
  2. 如請求項1之覆晶發光二極體裝置，其中該反射/傳導層(32)由一鋁層組成。
  3. 如請求項2之覆晶發光二極體裝置，其中一在該頂部接觸層(28)與該p接觸(30)之間之一界面(40)處的歐姆電阻保持於一最小值。
  4. 如請求項1之覆晶發光二極體裝置，其中該界面層係透過在沉積該p接觸(30)之前用一種酸以及接著用一食人魚(piranha)溶液接觸該頂部接觸層(28)而形成。
  5. 如請求項1之覆晶發光二極體裝置，其中該頂部接觸層(28)為一p-GaN層。
  6. 如請求項1之覆晶發光二極體裝置，其中該頂部接觸層 (28)為一n-GaN層且該等半導體層(22)進一步包括：一p-GaN層(68)。
  7. 如請求項6之覆晶發光二極體裝置，其進一步包括：一安置於該n-GaN層(28)與該p-GaN層(68)之間的穿隧接面(66)。
  8. 如請求項1之覆晶發光二極體裝置，其中該等半導體層(22)進一步包括：一p-GaN層(68)，且其中該頂部接觸層(28)為一安置於該p-GaN層(68)之頂部上的p-InGaN層。
  9. 如請求項1之覆晶發光二極體，其中該黏合堆疊(34)包括：一黏著層(50)；及一黏合層(54)。
  10. 如請求項9之覆晶發光二極體，其中該黏著層(50)為一鈦層且該黏合層(54)為一金層。
  11. 如請求項9之覆晶發光二極體，其中該黏合堆疊(34)進一步包括：一安置於該黏著層(50)與該黏合層(54)之間的擴散障壁層(52)。
  12. 如請求項11之覆晶發光二極體，其中該擴散障壁層(52)係選自一由一鎳層、一鉑層，及其組合所組成的群中。
  13. 一種覆晶發光二極體晶粒(12)，其包括：一透光基板(20)； 安置於該透光基板上的複數個半導體層(22)，該等半導體層(22)至少包括：一具有一界面表面層之接觸層(28)，及一n型層(24)；一形成於該n型層(24)上用以與一相關聯之座架(14)之一第一黏合襯墊(56)電接觸的n電極(36)；及一形成於該接觸層(28)之該界面表面層上用以與該相關聯之座架(14)之一第二黏合襯墊(58)電接觸的p電極(30)，該p電極(30)包括：一安置於該接觸層(28)上的反射/傳導鋁層(32)，該反射/傳導層(32)係對該等半導體層(22)產生的光高度反射且歐姆接觸於該接觸層(28)，及一安置於該反射/傳導層(32)上的黏合堆疊(34)，該黏合堆疊(34)適於將該覆晶發光二極體晶粒(12)覆晶黏合至該等黏合襯墊(56、58)，其中該界面表面層可減少該接觸層與該p電極間之接觸電阻。
  14. 一種製造一具有一高反射率及低電阻p接觸(30)的覆晶發光二極體之方法，其包含：於一基板(20)上沉積半導體層(22)，該等層(22)包括一接觸層(28)；使用一種酸處理該接觸層(28)以形成一界面層；及於該接觸層上沉積一金屬堆疊(30)，該金屬堆疊包括： 一反射/傳導層(32)，及安置於該反射/傳導層上的至少一黏合堆疊(34)。
  15. 如請求項14之方法，其進一步包括：在沉積該金屬堆疊之前用一種酸清洗該接觸層(28)。
  16. 如請求項14之方法，其中該反射/傳導層為一鋁層。
  17. 如請求項14之方法，其中該接觸層(28)為一p-GaN層。
  18. 如請求項14之方法，其中該接觸層(28)為一n-GaN層且該等半導體層進一步包括：一p-GaN層(68)。
  19. 如請求項14之方法，其中該等半導體層進一步包括：一p-GaN層，且其中頂部接觸層為一安置於該p-GaN層之頂部上的p-InGaN層。
  20. 如請求項14之方法，其中於使用該酸處理該接觸層之後，該接觸層係暴露於一食人魚溶液中。
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Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7227192B2 (en) * 2004-03-31 2007-06-05 Tekcove Co., Ltd Light-emitting device and manufacturing process of the light-emitting device
US20050247944A1 (en) * 2004-05-05 2005-11-10 Haque Ashim S Semiconductor light emitting device with flexible substrate
JP2006024829A (ja) * 2004-07-09 2006-01-26 Toshiba Corp 半導体装置及びその製造方法
TWI257714B (en) * 2004-10-20 2006-07-01 Arima Optoelectronics Corp Light-emitting device using multilayer composite metal plated layer as flip-chip electrode
US20070015300A1 (en) * 2005-07-15 2007-01-18 Yu-Chuan Liu Method for fabricating a light-emitting device
DE102006015788A1 (de) * 2006-01-27 2007-09-13 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
US7476606B2 (en) * 2006-03-28 2009-01-13 Northrop Grumman Corporation Eutectic bonding of ultrathin semiconductors
JP5306589B2 (ja) * 2006-11-17 2013-10-02 シャープ株式会社 半導体発光素子及びその製造方法
US20090173956A1 (en) 2007-12-14 2009-07-09 Philips Lumileds Lighting Company, Llc Contact for a semiconductor light emitting device
PL2771031T3 (pl) 2011-10-28 2018-09-28 Prothena Biosciences Limited Co. Humanizowane przeciwciała rozpoznające alfa-synukleinę
US9818912B2 (en) 2011-12-12 2017-11-14 Sensor Electronic Technology, Inc. Ultraviolet reflective contact
JP6167109B2 (ja) 2011-12-12 2017-07-19 センサー エレクトロニック テクノロジー インコーポレイテッド 紫外線反射型コンタクト
US10276749B2 (en) 2013-01-09 2019-04-30 Sensor Electronic Technology, Inc. Ultraviolet reflective rough adhesive contact
WO2014110197A1 (en) 2013-01-09 2014-07-17 Sensor Electronic Technology, Inc. Ultraviolet reflective rough adhesive contact
US9768357B2 (en) 2013-01-09 2017-09-19 Sensor Electronic Technology, Inc. Ultraviolet reflective rough adhesive contact
JP6936574B2 (ja) * 2016-12-07 2021-09-15 日機装株式会社 光半導体装置
JP6972665B2 (ja) * 2017-05-31 2021-11-24 セイコーエプソン株式会社 発光装置、プロジェクター、および発光装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW502438B (en) * 2001-07-23 2002-09-11 Uni Light Technology Inc Semiconductor device with ohmic contact and method for producing the same
TW573330B (en) * 2002-03-21 2004-01-21 Highlink Technology Corp A light-emitting semiconductor device with a flip-chip package structure
EP1403935A2 (en) * 2002-09-30 2004-03-31 LumiLeds Lighting U.S., LLC Light emitting devices including tunnel junctions

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10233529A (ja) * 1997-02-14 1998-09-02 Hewlett Packard Co <Hp> 窒化物半導体素子およびその製造方法
EP1928034A3 (en) * 1997-12-15 2008-06-18 Philips Lumileds Lighting Company LLC Light emitting device
JP4296644B2 (ja) * 1999-01-29 2009-07-15 豊田合成株式会社 発光ダイオード
US6812502B1 (en) * 1999-11-04 2004-11-02 Uni Light Technology Incorporation Flip-chip light-emitting device
US6992334B1 (en) 1999-12-22 2006-01-31 Lumileds Lighting U.S., Llc Multi-layer highly reflective ohmic contacts for semiconductor devices
US6573537B1 (en) * 1999-12-22 2003-06-03 Lumileds Lighting, U.S., Llc Highly reflective ohmic contacts to III-nitride flip-chip LEDs
US6486499B1 (en) * 1999-12-22 2002-11-26 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
TW543128B (en) * 2001-07-12 2003-07-21 Highlink Technology Corp Surface mounted and flip chip type LED package
US7358539B2 (en) * 2003-04-09 2008-04-15 Lumination Llc Flip-chip light emitting diode with indium-tin-oxide based reflecting contacts
US6847057B1 (en) * 2003-08-01 2005-01-25 Lumileds Lighting U.S., Llc Semiconductor light emitting devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW502438B (en) * 2001-07-23 2002-09-11 Uni Light Technology Inc Semiconductor device with ohmic contact and method for producing the same
TW573330B (en) * 2002-03-21 2004-01-21 Highlink Technology Corp A light-emitting semiconductor device with a flip-chip package structure
EP1403935A2 (en) * 2002-09-30 2004-03-31 LumiLeds Lighting U.S., LLC Light emitting devices including tunnel junctions

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