TW573330B - A light-emitting semiconductor device with a flip-chip package structure - Google Patents

Description

573330

[Field of the invention] The present invention relates to a light-emitting conductor device, which is made of Frost eve 4 + Zhuang + Bali Zhiyou lunch basket table, especially refers to a 4 丨 丨 made by the encapsulating party ## Self-Light Emitting Diode Device: Kind of Lee [Xi Bai Bai Pin. White long-color light, white light production, and other advantages. Learn the technology of mixing materials on the grain. Known technology] Light-emitting diodes (LEDs) are the most promising mix in the LED industry, such as blue light and yellow Light, you can get two \ Yebo people; or use the three primary colors of blue light, green light and red light mixed ^ ^ ^ white light. Because white light LEDs have power saving, environmental protection, and longevity, they have great potential for development in the future. The light-emitting method of the known white LED is mainly when coating a layer of YAG fluorescent material in blue, and using this blue LED to illuminate the yellow light generated by the fluorescent light and the blue light emitted by the blue LED itself. White light; US Patent No. 5,998, 92 5 discloses such a technique. FIG. 1 is a schematic diagram showing a conventional white LED packaging structure in US Pat. No. 5,998,925. As shown in FIG. 1, in the conventional technology, a white light emitting diode device 100 includes a light emitting diode die 102, a pedestal lead 105, and a side lead 106. 105 is further divided into a cup-shaped base 105a and a lead 105b. After the light emitting diode crystal 102 is installed in the recess of the cup-shaped base 105a, the cup-shaped base 105a is filled with a resin layer 101 containing a specific phosphor, so that the Light emitting diode

Page 7 573330 V. Description of the invention (2) The pellets 102 are molded in the resin layer 101. Then, the positive electrode and the negative electrode (not shown) of the light-emitting diode die 102 are connected to the base lead 105 and the side lead 106 by bonding wires 103, respectively. Finally, the light-emitting diode die 102, And part of the base wire 105 and the side wire 106 are further coated in a protective molding material 104.

When the above-mentioned white light emitting diode device 100 is operated, part of the light emitted by the light emitting diode crystal grains 102 will excite the light-emitting agent contained in the resin layer 101 to generate and emit light emitting diode crystal grains 1 〇2 light of different wavelengths. Therefore, when the light emitted by the light-emitting diode grains 102 and the mixed light generated by the fluorescent agent excited by the blue light-emitting diode are emitted out of the light-emitting diode device 100 together, this is caused by two different wavelengths. The composed mixed light forms white light visible to the human eye. Fig. 2 is a schematic diagram showing the structure of a conventional light emitting diode crystal 102. A conventional light emitting diode crystal grain 102 can be shown in FIG. 2, which is a kind of light emitting diode mainly composed of nitride (GaN). In FIG. 2, the light emitting diode 200 includes a sapphire substrate 201 and a layered structure. The layered structure includes at least one n-type gallium nitride semiconductor layer deposited on the sapphire substrate 201. 202, and a p-type gallium nitride semiconductor layer 203 deposited thereon. Then, an N-type gallium nitride semiconductor bare surface 206 is formed by etching, and an N-type electrode 205 is provided thereon; a transparent electrode 204 is formed on the surface of the P-type gallium nitride semiconductor layer 203. ; Next, a P-type electrode region (not shown) is defined on the transparent electrode 204, so that the region exposes the p-type gallium nitride semiconductor layer on the P-type gallium nitride semiconductor layer 203 in the region. P-type

573330 V. Description of the invention (3) Electrode 20 07 and make it electrically connected with the transparent electrode 204, so as to complete the whole process of the conventional light-emitting diode grains. Although the above-mentioned conventional white light emitting semiconductor device 100 can effectively generate white light, there are still some problems that cannot be overcome in terms of process or structure so far. 1. As shown in Figure 2, the light generated by the white light emitting diode device 100 must be transmitted through the transparent electrode 204. Although this electrode has a certain light transmittance due to its extremely thin thickness, it is actually used to make the electrode There is a good ohmic contact with the underlying semiconductor layer, and its thickness is generally not extremely thin. Therefore, a part of the light generated by the light emitting diode 200 will be blocked or absorbed by the transparent electrode 204. Said two. As shown in FIG. 1, the light emitted by the light-emitting diode crystal grains 102 will attenuate when passing through the resin layer 101 mixed with a fluorescent agent. These reasons will weaken the light-emitting diode device 100. The output brightness of the white light emitting diode device 100 is caused by the light emitted by the diode crystal 102 and the fluorescent agent in the resin layer. The mixed light of the generated light should be mixed to produce appropriate white light. In addition to controlling the thickness of the coated resin layer 101 and controlling the mixing ratio of a specific phosphor in the resin layer 101 each time, This is a big challenge in mass production. Mouth 4. White light led b made by the conventional technology. When you want to check whether the light emitted is the set white light, you usually have to wait until the entire assembly process is completed before you can do the inspection. White LEDs with different wavelengths are required first, but other remedies are no longer available

Page 9 573330 V. Description of the invention (4) Manufacturing process; With such characteristics, when you inspect the media, in the case of mass manufacturing, LEDs can often only be tested afterwards, and the material is formed because it is impossible to perform instant inspection. m 5 # ^ / 袓 / good fee, especially if all products are inspected after the fact. Heart, it is likely to lose a whole manufacturing batch with the same lot number-pole ί · 奘 ίΛΓ: the disadvantages described above are due to the traditional white light emission C, such as the dual-wavelength hybrid type of white first luminescence II The polar body, that is, the wavelength emitted by "blue light" and "Zhong, Γ1", is irradiated with blue light and fluoresces into white powder. The use of short-wavelength blue light to excite long-wavelength yellow light is basically energy conversion. However, this type of energy conversion (short-wavelength blue light to light) efficiency is difficult to reach 100%. According to the concept of energy scale, part of the energy that cannot be converted 100% will be released through thermal energy, and traditional white light-emitting diode devices (such as US Patent Nos. 5,998,925 and 5,962,97 1), due to crystal grains All are sealed in transparent (referring to transparent light-emitting band) materials (such as resin or epoxy or polyimide), and it is extremely difficult to dissipate heat to the outside through appropriate pipes; Moreover, in most white light emitting diode devices, the phosphor is mostly placed in the packaging material and is close to the upper surface of the light emitting diode grains. This structure makes the grains away from the heat source (the phosphor layer). ; Heat due to incomplete energy conversion) is very close, and also because the active layer of the light-emitting diode grains is close to the upper surface, when heat is accumulated to a certain extent on the upper surface of the crystal, the white light will emit light Diode device 573330 5. Description of the invention (5) becomes unstable. At the same time, it also indirectly affects the operating life of the white light emitting diode device. [Summary of the Invention] The purpose of the present invention is to improve the above-mentioned shortcomings, and in view of the conventional white light emitting diode device described above, to propose an excellent thermal insulation performance (the sapphire substrate is used to block the heat transfer between the crystal grain and the glory layer), and the heat dissipation White light emitting semiconductor device with the advantages of good, high brightness, high manufacturing yield, and low manufacturing cost. The characteristics of this device are: 1. Using a flip chip method to perform the solid-state crystal manufacturing process of white light emitting semiconductors. . 2. In the manufacturing process of the crystal grains, a precise coating process is used to closely control the thickness of the coating resin layer and the mixing ratio of the specific phosphor (phosphor) in the resin layer. Second, the use of wafer-level probing method (wafer-level probing) for online real-time inspection to reduce the occurrence of bad and rapid classification; this way, even if you encounter bad products, you can achieve immediate remedy (on -time rework processing). Fourth, use the sapphire substrate's poor thermal conductivity to isolate the heat conduction between the crystal grains and the fluorescent layer to avoid the traditional white light emitting diode device, because of the poor reliability and short life of the components caused by heat. The white light emitting semiconductor device with a flip chip package structure according to the present invention includes: a package base, a first insulating layer partially covering a surface of the package substrate, and connected to the package substrate in a flip-chip manner. Of

Page 11 573330 V. Description of the invention (6)

Yifa $ diode 'and a fluorescent layer coated on the bottom surface of the substrate of the light-emitting diode', where 'This light-emitting diode includes a first form of a substrate formed on the surface of the substrate A semiconductor layer, a first electrode formed on a part of the surface of the first type semiconductor layer, and a surface of the first type semiconductor layer, but an active layer that does not cover the first electrode is formed on the semiconductor layer A second type semiconductor layer on the surface of the movable layer, and a second electrode formed on the surface of the second type semiconductor layer. The white light emitting semiconductor device further includes a first solder bump on the first insulation layer, a second solder bump 4 ′ located on an area of the package substrate that does not cover the first insulation layer, and the first solder bump. A second insulating layer formed in a bump shape between the portion and the second solder bump portion. Wherein, the light-emitting diode system passes through the connection between the electrode and the first solder bump, the connection between the second electrode and the first solder bump, and is bonded to the package substrate, and the first insulating layer It is used to separate the first electrode from the second electrode. [Embodiment] Referring to FIG. 3a and FIG. 4, FIG. 3a is a cross-sectional view of a white light emitting semiconductor device according to the first embodiment of the present invention, and FIG. 4 is a top view of the white light emitting semiconductor device according to the} th embodiment of the present invention. As shown in FIG. 3a, according to a preferred embodiment of the present invention, a white light emitting semiconductor device 300 having a flip-chip encapsulation structure includes a package substrate 300 and a light emitting diode 302. Among them, the package substrate 3101 is a conductive Shixi substrate 'and an insulating layer 3 of silicon dioxide is formed thereon. Similar to the light-emitting diode 200 of FIG. 2, the blue-emitting light-emitting diode 302 includes a sapphire substrate 304 and N-type nitride deposited on the sapphire substrate 304.

573330

A gallium semiconductor layer 305, an active layer 306 deposited on the N-type gallium nitride semiconductor layer 305, and a p-type gallium nitride semiconductor layer 307 deposited on the active layer 306. Among them, the function of the active layer 306 is to emit light, and the chemical composition of the N-type nitride semiconductor layer 305 and the P-type gallium nitride semiconductor layer 307 is a four-element semiconductor InxAlyGai_x_yN, and the Mohr fractions x, y The conditions of $ 0, 0 Sy S 1, and x + y = l must be met. The material of the active layer is also a four-element semiconductor InxAlyGa ^ yN, and the Mohr fractions x and y must satisfy the conditions of 0 ′ 1, 0 S 1, and x + y = l. In addition, the material of the insulating layer 303 can be replaced by SiOx, SiNx, ai203, titanium dioxide (Ti02), oxide button (Ta2 05), 23 TEOS ( Tetra-Ethyl-Ortho-Silicate), epoxy, and polyimide. In the embodiment of the present invention, an N-type gallium nitride semiconductor layer 305 and an active layer 306 are disposed on the sapphire substrate 304, and then a P-type gallium nitride semiconductor layer 307 is disposed thereon. However, it is also possible to deposit a p-type gallium nitride semiconductor layer on the blue and sapphire substrate 300, and then sequentially deposit an active layer and an n-type gallium nitride semiconductor layer; at this time, the packaging substrate 300 is used P-type silicon substrate. Similar to the light-emitting diode 200 of FIG. 2, the light-emitting diode 302 of this embodiment has an electrode 3 08 formed on the N-type gallium nitride semiconductor layer 305. A transparent electrode 309 is formed on the type GaN semiconductor layer 307, and a conductive reflective layer 314 is provided on the transparent electrode 309. At the same time, a polyimide insulation layer 3 丨 5 is arranged between the electrode 308 and the transparent electrode. The biggest feature of the present invention is that the fluorescent layer 313 is coated on the light emitting diode

573330 V. Description of the invention (8)-On the bottom surface of the sapphire substrate 304 of the body 302, light-emitting diode crystals of different colors are mixed with colored light generated after the phosphor is excited into white light. Compared with the conventional white light emitting diode device, it has the following advantages Y (1) The heat generated by the fluorescent layer 313 can be effectively isolated from the sapphire substrate. In the conventional technology, the fluorescent layer 313 is disposed above the die. Due to the different thermal expansion coefficients of the packaging material (such as resin or epoxy) and the die surface layer (such as bonding pad and TCL), it is used for white light emitting diodes. The heat generated during the operation of the bulk device is very easy to generate stress above the crystal grains, and the surface of the crystal grains is very close to the active layer, so it can easily affect the overall stability and operating life of the device. The design of the present invention can avoid this disadvantage; (2) It has the characteristics of back light emission. The present invention can avoid the problem of shadows caused by the conventional method of using white light emitting diode devices to emit light from the front. The light-emitting diode 302 is provided on the package substrate 301 in a flip chip package, and the light-emitting diode 302 is bonded to the package substrate 3 through two solder bumps 310 and 311. 01 on. The bonding method is to firstly mount the solder bumps 31 o and 311 on the package substrate 301, and then solder the electrode 308 to the solder bump 310 and the conductive reflective layer 314 to the solder bump 311 to make the light-emitting diodes. The body 302 is fixed on the packaging substrate 301; the insulation layer 303 is provided with a solder pad 312 connected to the solder bump 310 so that the electrode 308 can be connected to an external power source; at the same time, an electrode 308 is disposed between the transparent electrode A polyimide insulation layer 315 is used to avoid the excessive leakage current on the surface of the component, the short circuit of the electrode and the poor positioning due to the use of fl ip chip packaging.

573330 V. Description of Invention (9) Problem. According to the above structure, the electrode 3G8 of the light-emitting diode 302 can be connected to a negative electrode through the solder bump 310 and the solder pad 312, and the transparent electrode 309 can be conducted to the conductive packaging substrate 301 through the solder bump 311. Furthermore, it is externally connected to a positive electrode. Therefore, compared with the conventional packaging process, a wire bonding process of two positive and negative electrodes is required. One of the great advantages of this embodiment is that the wire bonding process in the traditional packaging process can be omitted. In addition, as mentioned above, another advantage of the present invention is that it has better brightness. Compared with the light-emitting diode grains 102 shown in FIG. 1, the light emitted by the light-emitting diode 302 is not affected by the electrode. The absorption or blocking of 308, the transparent electrode 309, and the solder pad 312, etc., is because the light generated by the active layer 306 can be emitted upward from the sapphire substrate 300, and the sapphire substrate 30. 4 has excellent light transmittance. Therefore, most of the light generated by it can be effectively emitted from the sapphire substrate 304, so it can obtain excellent brightness. In addition, as shown in FIG. 3a, the above-mentioned conductive reflective layer 314 can also be formed on the transparent electrode 309, which can be selected from metal materials such as gold, aluminum, nickel, titanium, silver, chromium, platinum, or an oxide. (Zn0), tin dioxide (511〇2), cadmium tin oxide (CTO) / indium oxide (IZ〇), nickel oxide (Ni〇), cadmium oxide, oxide (CdSn204), indium Dielectric materials such as cadmium oxide (Cd2Sn〇4), zinc tin oxide, butadiene oxide (GZ〇), inscription oxide (AZ0), nitride # \ ® oxide (IT〇), etc. The appropriate material for the component is a highly reflective layer with a single-layer, multi-layer, or mixed-multi-layer square-band emission band. Its role is to effectively reflect the light emitted from the active layer 306 towards the package substrate 301.

ΗΙΙΙΗί Page 15 573330 V. Description of the invention (ίο) The light is reflected toward the sapphire substrate 304, which can further improve the output brightness of the white light emitting semiconductor device 300. According to the above-mentioned embodiment, another advantage of the present invention is that the heat dissipation is good. This is because the package substrate 301 made of silicon, for example, has excellent heat dissipation, so the light emitting diode 302 is The heat generated during the operation can be conducted to the package substrate 3 001 through the solder bumps 31 and 311, so the heat resistance and operating life of the white light emitting semiconductor device 300 can be greatly improved. Referring to FIG. 5, it is a schematic cross-sectional view illustrating a process of a white light emitting semiconductor device according to a first embodiment of the present invention. Another advantage of the present invention is that the coating of the fluorescent layer can save more fluorescent materials and processing time than the manufacturing processes of conventional devices. As shown in FIG. 5, a plurality of white light emitting diodes arranged in a row = the conductor device 300 can simultaneously coat the fluorescent layer 313, so that it can be large and save time in the manufacturing process, making the white light emitting semiconductor device 300 = favorable For mass production. In addition, during coating, a mask 400 can be used to cover each light-emitting diode, and the pad portion of the device 300 can be installed, because these parts will be covered by the light-emitting diode 300. Light, so it is not actually = coating the fluorescent agent, & this can save the fluorescent agent used in the manufacturing process, and the "more important" manufacturing method is probably the most uniform coating known so far. Method for distributing fluorescent materials. Referring to Fig. 3b, a cross-sectional view of a conductor device shows a white light emitting half view of a second embodiment of the present invention. 3 2 0. As shown in the figure, one side of the light-emitting diode 302 is an inclined plane, so that the light emitted by the active layer 306 is emitted from the light-emitting diode 573330. 5. The invention (π) side of the body 302 is less It is easy to generate total reflection on the inclined surface 320, that is, to make these lights transmit as easily as possible from the side of the light emitting diode 320. At the same time, the package substrate may have a trapezoidal cross-section, and it may be a light-transmitting substrate. In addition, since the uppermost layer of the present invention is a substrate of a light-emitting diode, the substrate is usually made of a non-conductive material, such as the sapphire substrate 304 used in the above embodiment, so it is compared with conventional devices. Still has the protective function of electrostatic discharge (ESD). Fig. 3c is a cross-sectional view showing a white light emitting semiconductor device according to a third embodiment of the present invention. As shown in FIG. 3c, the third embodiment of the present invention is very similar to the i-th embodiment described above, wherein a white light emitting semiconductor device 500 with a flip-chip packaging structure includes a packaging substrate 501 and a light emitting diode 502. Among them, the package substrate 501 is a conductive N-type stone substrate, and an insulating layer 503 of silicon dioxide is formed thereon. Similar to the light-emitting diode 200 of FIG. 2, the light-emitting diode 502 includes a sapphire substrate 504, an N-type gallium nitride semiconductor layer 505 deposited on the sapphire substrate 504, and an n-type. An active layer 506 on the gallium nitride semiconductor layer 505 and a p-type gallium nitride semiconductor layer 507 deposited on the active layer 506. The light-emitting diode 502 has an N-type electrode 508 formed on the N-type gallium nitride semiconductor layer 505, and a P-type electrode 509 is formed on the p-type gallium nitride semiconductor layer 507. A fluorescent layer 513 is coated on the bottom surface of the substrate 504. In the same way as in the first embodiment and the second embodiment, the light emitting diode 502 is mounted on the package substrate 501 with a flip-chip packaging method, and the bonding method is

573330

This is achieved through two solder bumps 510 and 511. That is, the 'P-type electrode 509 is bonded to the solder bump 511 and fixed on the sealing substrate 501. The insulating layer 503 is provided with a solder pad 512 connected to the solder bump 51, and the N-type electrode 5 08 is bonded to the solder bump 510 and fixed on the package substrate 501. The difference between this embodiment and the first embodiment is only that the P-type electrode 509 does not need to be a transparent electrode, and the P-type gallium nitride semiconductor layer 507 does not have the same as that in the first embodiment. The conductive reflective layer 3 1 4 has a thicker P-type electrode 509 than the transparent electrode 309 in the first embodiment, so as to obtain better ohmic contact characteristics. The descriptions made by the embodiments above are for the convenience of explaining the content of the present invention, rather than limiting the present invention to the embodiment in a narrow sense. Any changes that do not depart from the spirit of the present invention are within the scope of the present invention.

Page 18 573330 Brief description of drawings Figure 1 is a schematic diagram of a conventional white light emitting diode package structure. FIG. 2 is a schematic diagram of a conventional light emitting diode crystal structure 102. FIG. Fig. 3a is a cross-sectional view of a white light emitting semiconductor device according to a first embodiment of the present invention. Fig. 3b is a cross-sectional view of a white light emitting semiconductor device according to a second embodiment of the present invention. Fig. 3c is a cross-sectional view of a white light emitting semiconductor device according to a third embodiment of the present invention. Fig. 4 is a plan view of the white light emitting semiconductor device according to the first embodiment of the present invention. FIG. 5 is a schematic cross-sectional view of a manufacturing process of the white light emitting semiconductor device according to the first embodiment of the present invention. [Figure number] 100 ~ white light emitting diode device 1 0 1 ~ resin layer 1 0 2 ~ light emitting diode 1 0 3 ~ bonding wire 104 ~ mold material 105 ~ base wire 1 0 5a ~ base 105b ~ Lead 106 ~ Side lead-200 ~ Light emitting diode

Page 19 573330 Schematic description 2 0 1 ~ Sapphire substrate 202 ~ N-type GaN semiconductor layer 203 ~ P-type GaN semiconductor layer 204 ~ Transparent electrode 205 ~ N-type electrode 20 6 ~ Semiconductor bare surface 20 7 ~ P-type electrode 30 0 to white light emitting semiconductor device 301 to package substrate 302 to light emitting diode 3 0 3 to insulating layer 304 to sapphire substrate 30 5 to N-type gallium nitride semiconductor layer 3 0 6 to active layer 30 7 to P Type gallium nitride semiconductor layer 3 0 8 to electrode 309 to transparent electrode 31 0 to solder bump 3 11 to solder bump 312 to pad 313 to fluorescent layer 314 to conductive reflective layer 315 to polyimide layer 320 to Bevel

P.20 573330 Brief description of the drawings 4 0 0 to mask 50 0 to white light emitting semiconductor device 501 to package substrate 50 2 to light emitting diode 5 0 3 to insulating layer 504 to sapphire substrate 50 5 to N-type gallium nitride Semiconductor layer 5 0 6 to active layer 507 to P-type gallium nitride semiconductor layer 508 to N-type electrode 50 9 to P-type electrode 51 0 to solder bump 51 b solder bump 512 to pad 513 to fluorescent layer

Page 21

Claims (1)

573330 VI. Scope of patent application-* ^ w A white light emitting semiconductor with flip-chip packaging structure. 罝 'It includes: ~ package substrate;: a first insulation layer, which partially covers the surface of the package substrate; Winter. The light-emitting diode is connected to the package substrate in a flip-chip manner, a substrate; a _ _ type semiconductor layer is formed on the surface of the surface of the substrate; and the fifth electrode is formed on A part of the first type semiconductor layer, an active layer 9 is formed on the surface of the first type semiconductor layer, and the first electrode and a second type semiconductor layer 5 are not formed on the surface. The surface of the active layer has 9 faces; a second electrode 9 is formed on the surface of the second type semiconductor layer = the first solder bump, and is located on the first insulating layer; Edge layer: two solder bumps are located on the package substrate and cover the first and second regions; bump 2 is an insulating layer located between the first solder bump and the second solder bump and is in the shape of a bump; and On; a fluorescent layer is coated on the bottom surface of the substrate of the light emitting diode Page 573 330 Wherein, the light-emitting diode system is connected to the packaging substrate through the connection between the first electrode and the first solder bump, and the connection between the second electrode and the second solder bump, and the second substrate is used. The insulating layer is spaced from the first electrode and the second electrode. … 2. The white light emitting semiconductor device according to item 1 of the scope of patent application, wherein the packaging substrate is a conductive substrate. 3. The white light emitting semiconductor device according to item 2 of the patent application scope, wherein the package substrate is an N-type silicon substrate. 8. The white light emitting semiconductor device according to item 2 of the patent application scope, wherein the package substrate is a P-type silicon substrate. · 5. The white light emitting semiconductor device according to item 1 of the patent application scope, wherein the package substrate is a ceramic substrate. 6. The white light emitting semiconductor device according to item 1 of the application, wherein the substrate of the far-emitting diode is a sapphire substrate. 7. The white light-emitting semiconductor device according to item 1 of the patent application scope, wherein the light-emitting polar body has a side surface with an inclined surface. 8. The white light emitting semiconductor device according to item 1 of the application, wherein the package substrate has a trapezoidal cross section and is a light-transmitting substrate. 9. The white light emitting semiconductor device according to item 1 of the scope of patent application, wherein the material of the first insulating layer is silicon dioxide (SiO2), silicon oxide (SiOx), silicon nitride (SiNx), oxide One of aluminum (A 1 203), titanium dioxide (Ti02), oxide button (Ta205), TEOS (Tetra-Ethy or Ortho-Silicate), epoxy resin (epoxy), or polyimide. Page 23 573330 6. Scope of patent application 10. The white light-emitting semiconductor device according to item 1 of the patent scope, wherein the material of the second insulating layer is polyimide (P 01 y i m i d e). 11. The white light emitting semiconductor device according to item 1 of the application, wherein the light emitting diode further has a conductive reflective layer formed on the second electrode and having an effect of reflecting light. 12. The white light emitting semiconductor device according to item 11 of the application, wherein 'the second electrode is a transparent electrode. 13. The white light emitting semiconductor device according to item 11 of the application, wherein the material of the conductive reflective layer is gold, aluminum, nickel, titanium, silver, chromium, or one of them. 14. The white light emitting semiconductor device according to item 11 of the application, wherein the material of the conductive reflective layer is zinc oxide (Zn〇), tin dioxide (Sn〇2), cadmium tin oxide (CT〇), Indium zinc oxide (lz〇), nickel oxide 5 =, cadmium oxide (cd〇), tin cadmium oxide (CdSn204), indium cadmium oxide (di Sn04), zinc tin oxide (Zn2Sn〇4), Gallium zinc oxide (gz〇), aluminum monolith (AZ0), titanium nitride (TiN), or indium tin oxide (ιτ〇) 1 of 5 5 of the patent scope of the white light emitting semiconductor device "Π ;! The material of the radiation layer uses gold, silver, and chromium to kick oxygen; darts (CT0, and: oxide (Zn〇) ;: tin oxide (Sn〇2); cadmium zinc oxide (Iz.); Nickel oxide (rigid ) 'Oxidation (AZOf Λ4 gallium zinc oxide flower ⑽), aluminum zinc oxide (_, disordered titanium (TiN) or indium tin oxide (ιτ〇) Page 24 573330 6. Scope of patent application Stacked structure of layers. 16. The white light emitting semiconductor device according to item 1 of the scope of the patent application, wherein the composition of the first type semiconductor layer and the second type semiconductor layer is a four element semiconductor 1nxAlyGab " N, and the mole fraction X and y must satisfy the conditions of 0 $ and x + y = l. 17. The white light emitting semiconductor device according to item 16 of the application, wherein the first type semiconductor layer is an N-type gallium nitride semiconductor layer, and the second semiconductor layer is a P-type gallium nitride semiconductor layer. 18. The white light emitting semiconductor device according to item 16 of the application, wherein 'the first type semiconductor layer is a p-type gallium nitride semiconductor layer, and the second semiconductor layer is an N-type gallium nitride semiconductor layer. 19. A method for forming a white light emitting semiconductor device with a flip chip package structure, comprising the following steps: partially covering a first insulating layer on a package substrate; forming a light emitting diode, the light emitting diode The body includes: a substrate; a first type semiconductor layer formed on the surface of the substrate; a first electrode formed on the surface of the first type semiconductor layer; an active layer formed on the first type; A second type semiconductor layer is formed on the surface of the active layer; and a second electrode is formed on the surface of the second type semiconductor layer Page 573 330 Forming a first solder bump on the first insulating layer; forming a second solder bump on the package substrate that is not covered by the first insulating layer; forming a first solder bump on the first solder bump with the second solder Bulge-a second insulating layer in the shape of a bump; Fengcheng joins the light-emitting diode in such a manner that the first electrode is connected to the first soldered bump, and the second electrode is connected to the second soldered bump. To the first insulating layer of the packaging substrate, wherein the second insulating layer is used to separate the first electrode from the second electrode; and coating a fluorescent light on the bottom surface of the substrate of the light emitting diode Floor. 20. The method for forming a white light emitting semiconductor device according to item 19 of the application, wherein the package substrate is a conductive substrate. 21. The method for forming a white light emitting semiconductor device according to item 20 of the application, wherein the package substrate is an N-type silicon substrate. 22. The method for forming a white light emitting semiconductor device according to item 20 of the application, wherein the package substrate is a P-type silicon substrate. 23. The method for forming a white light emitting semiconductor device according to item 19 of the application, wherein the package substrate is a ceramic substrate. 24. The method for forming a white light emitting semiconductor device according to item 19 of the application, wherein the substrate of the light emitting diode is a sapphire substrate. 25. The method for forming a white light emitting semiconductor device according to item 19 of the application, wherein the light emitting diode system has a side surface having an inclined surface. 26. Formation of white light emitting semiconductor devices such as the scope of application for item 19 573330 6. Method for applying for a patent, wherein the package substrate has a trapezoidal cross section and is a light-transmitting substrate. 27. The method for forming a white light-emitting semiconductor device according to item 19 of the scope of the patent application, wherein the material of the first insulating layer is dream dioxide (SiO 2), dream oxide (SiOx), silicon nitride (SiNx), aluminum oxide (A12〇3), titanium dioxide (Ti〇2), oxide button (Ta205), TEOS (Tetra-Ethyl-Ortho-Silicate), epoxy resin or polyimide one of them. 28. The method for forming a white light emitting semiconductor device according to item 19 of the patent application, wherein the material of the first insulating layer is polyimide. 29. The white light emitting semiconductor according to item 19 of the patent application. The device forming method, wherein the light emitting diode further has a conductive reflective layer formed on the second electrode and having an effect of reflecting light. 30. The method for forming a white light emitting semiconductor device according to item 29 of the application, wherein the second electrode is a transparent electrode. 31. The method for forming a white light emitting semiconductor device according to item 29 of the application, wherein the material of the conductive reflective layer is one of gold, aluminum, nickel, titanium, silver, copper, or aluminum. 32. The method for forming a white light emitting semiconductor device according to claim 29 of the patent scope, wherein the material of the conductive reflective layer is zinc oxide (Zn〇), tin dioxide (Sn〇2), cadmium tin oxide (CT 〇), indium zinc oxide (ιζ〇), nickel oxide (Nl ()), oxidation log (Cd〇), tin pick oxide (CdSn204), indium cadmium oxide (Cd2Sn04), zinc tin oxide (Zn2Sn〇4), gallium oxide 573330 VI. One of the patent application scopes * — ___ (GZ0) and zinc zinc oxide (ΙΤ0). Material (), emulsified titanium (ΠN) or indium tin oxide 33. As described in the method of item gg of the Shen Qing patent, wherein the light-emitting semiconductor device of the conductive reflective layer is formed of silver, silver, chromium or platinum 7. The material is made of gold, aluminum, nickel, tin (Sn02), cadmium tin oxide (c di'emulsification (NiO), cadmium oxide (Cd0), tin cake> Indium zinc lice (IZ0), oxidation Nickel (Cd SnO)} Tin Emulsion (CdSn204), Indium Cadmium Oxide j ^, Tin Oxide (Zn2Sn〇4), Gallium Zinc Oxide (GZ0), Aluminum Zinc Emulsion (AZ0), Titanium Nitride ( TiN) or indium tin oxide (ITO) to form a multilayer stack structure. 34. The method for forming a white light emitting semiconductor device according to item 19 of the patent application 'wherein the first type semiconductor layer and the first type semiconductor layer Type II composition system-four-element semiconductor InxAlyGai_x, yN, and Morse = = must meet the conditions of 0Sx, 0Sy, and x + y = 1. 35. White light emission such as the 34th in the scope of patent application Method for forming a semiconductor device, wherein the first type semiconductor layer is an N-type gallium nitride semiconductor layer The conductor layer is a p-type gallium nitride semiconductor layer. For example, a method for forming a white light emitting semiconductor device in the 34th patent scope of the Γΐ patent, /, The first type semiconductor layer is a p-type gallium nitride semiconductor. 'The second semiconductor layer is an N-type gallium nitride semiconductor layer.