TWI697136B - Light-emitting device - Google Patents

Abstract

A light-emitting device is provided. The light-emitting device includes a substrate, a light-emitting component, a wave-length converting component, an adhesive and a reflective layer. The light-emitting component is disposed on the substrate. The wave-length converting component includes a high density converting layer and a lower density converting layer. The adhesive is formed between the light-emitting device and the high density converting layer. The reflective layer is formed above the substrate and covers a lateral surface of the light-emitting component, a lateral surface of the adhesive and a lateral surface of the wave-length converting component.

Description

Light emitting device

The invention relates to a light-emitting device and a method for manufacturing the same, and in particular to a light-emitting device with a reflective layer and a method for manufacturing the same.

The conventional light-emitting device includes a fluorescent glue and a light-emitting element, wherein the fluorescent glue covers the upper surface and side surfaces of the light-emitting element. The light emitting element generates high temperature when it emits light. This high temperature will affect the fluorescent glue, accelerate the aging of the fluorescent glue, and change the light color of the light emitting device.

Therefore, there is an urgent need to propose a solution that can slow down the aging of fluorescent glue.

Therefore, the present invention proposes a light-emitting device and a method for manufacturing the same, which can slow down the aging of the fluorescent glue.

According to an embodiment of the present invention, a light emitting device is proposed. The light-emitting device includes a substrate, a light-emitting element, a wavelength conversion layer, an adhesive, and a reflective layer. The light emitting element is provided on the substrate. The wavelength conversion layer includes a high density conversion layer and a low density conversion layer. The adhesive is formed between the light-emitting element and the high-density conversion layer. The reflective layer is formed on the substrate and covers a side of the light-emitting element, a side of the adhesive, and a side of the wavelength conversion layer.

According to another embodiment of the present invention, a method for manufacturing a light-emitting device is provided. The manufacturing method includes the following steps. Provide a substrate and a light-emitting element, the light-emitting element is provided on the substrate; provide a wavelength conversion layer, wherein the wavelength conversion layer includes a high-density conversion layer and a low-density conversion layer; with a glue, the high-density conversion layer and the light-emitting Device; and, forming a reflective layer on the substrate, wherein the reflective layer covers a side of the light-emitting device, a side of the adhesive and a side of the wavelength conversion layer.

In order to have a better understanding of the above and other aspects of the present invention, the following describes the preferred embodiments in conjunction with the attached drawings, which are described in detail as follows:

FIG. 1 is a cross-sectional view of a light emitting device 100 according to an embodiment of the invention. The light emitting device 100 includes a substrate 110, a light emitting element 120, a wavelength conversion layer 130, an adhesive 140, and a reflective layer 150.

The substrate 110 is, for example, a ceramic substrate. In this embodiment, the substrate 110 includes a base material 111, a third electrode 112, a fourth electrode 113, a first pad 114, a second pad 115, a first conductive pillar 116, and a second conductive pillar 117.

The substrate 111 is formed of, for example, a silicon-based material. The substrate 111 has opposing first surface 111u and second surface 111b. The third electrode 112 and the fourth electrode 113 are formed on the first surface 111 u of the substrate 111, and the first pad 114 and the second pad 115 are formed on the second surface 111 b of the substrate 111. The first conductive pillar 116 and the second conductive pillar 117 penetrate the substrate 111, wherein the first conductive pillar 116 connects the third electrode 112 and the first pad 114 to electrically connect the third electrode 112 and the first pad 114, and the first The two conductive posts 117 connect the fourth electrode 113 and the second pad 115 to electrically connect the fourth electrode 113 and the second pad 115.

The light emitting device 100 can be disposed on a circuit board (not shown), wherein the first pad 114 and the second pad 115 of the substrate 110 are electrically connected to the two electrodes (not shown) of the circuit board, so that the light emitting element 120 The first pad 114 and the second pad 115 are electrically connected to the circuit board.

The light emitting element 120 is provided on the substrate 110. The light emitting element 120 includes a first electrode 121 and a second electrode 122, wherein the first electrode 121 and the second electrode 122 are electrically connected to the third electrode 112 and the fourth electrode 113, respectively.

The light emitting element 120 is, for example, a light emitting diode. Although not shown in the figure, the light emitting element 120 may further include a first type semiconductor layer, a second type semiconductor layer, and a light emitting layer. The light emitting layer is provided between the first type semiconductor layer and the second type semiconductor layer. The first type semiconductor layer is, for example, an N type semiconductor layer, and the second type semiconductor layer is a P type semiconductor layer; or, the first type semiconductor layer is a P type semiconductor layer, and the second type semiconductor layer is an N type semiconductor layer Floor. In terms of materials, the P-type semiconductor layer is, for example, a gallium nitride-based semiconductor layer doped with beryllium (Be), zinc (Zn), manganese (Mn), chromium (Cr), magnesium (Mg), calcium (Ca), etc. And the N-type semiconductor layer is doped with gallium nitride such as silicon (Si), germanium (Ge), tin (Sn), sulfur (S), oxygen (O), titanium (Ti), or zirconium (Zr), for example Base semiconductor layer. The light emitting layer 122 may be _{In x Al y Ga 1-xy} N (0 ≦ x, 0 ≦ y, x + y ≦ 1) structure, also mixed boron (B) or phosphorus (P) or arsenic (As), can be Single or multi-layer structure.

The first electrode 121 may be made of gold, aluminum, silver, copper, rhodium (Rh), ruthenium (Ru), palladium (Pd), iridium (Ir), platinum (Pt), chromium, tin, nickel, titanium, tungsten (W) , Chromium alloy, titanium-tungsten alloy, nickel alloy, copper-silicon alloy, aluminum-copper-silicon alloy, aluminum-silicon alloy, gold-tin alloy and combinations of at least one layer, but not limited to this. The material of the second electrode 122 may be similar to that of the first electrode 121, and it will not be repeated here.

The wavelength conversion layer 130 includes a high-density conversion layer 131 and a low-density conversion layer 132. The wavelength conversion layer 130 includes several fluorescent particles, wherein a region with a higher density of fluorescent particles is defined as a high-density conversion layer 131, and a region with a lower density of fluorescent particles is defined as a low-density conversion layer 132. In one embodiment, the ratio of the density of the fluorescent particles in the high-density conversion layer 131 to the density of the fluorescent particles in the low-density conversion layer 132 may be between 1 and 10 ¹⁵ , and the values may or may not include 1 and 10. ¹⁵ .

In this embodiment, the high-density conversion layer 131 is located between the light-emitting element 120 and the low-density conversion layer 132. In other words, the light L1 of the light emitting element 120 will first pass through the high-density conversion layer 131 and then pass through the low-density conversion layer 132 to emit light. Due to the design of the high-density conversion layer 131, the light colors of several light-emitting devices 100 can be concentratedly distributed on the chromaticity coordinates, so that the product yield of these light-emitting devices 100 can be increased. The low-density conversion layer 132 can increase the light mixing probability of the light L1 from the light-emitting element 120. In detail, for the light L1 that is not in contact with the fluorescent particles in the high-density conversion layer 131, the low-density conversion layer 132 increases its chance of contacting the fluorescent particles. In this embodiment, the thickness T2 of the low-density conversion layer 132 is greater than the thickness T1 of the high-density conversion layer 131, so the light mixing probability of the light L1 of the light-emitting element 120 can be further increased. In an embodiment, the ratio of the thickness T2 to the thickness T1 may be between 1 and 100, and the values therein may or may not include 1 and 100.

The wavelength conversion layer 130 covers the entire upper surface 120u of the light emitting element 120, that is, in this embodiment, the top view area of the wavelength conversion layer 130 is larger than the top view area of the light emitting element 120. In one embodiment, the ratio of the top view area of the wavelength conversion layer 130 to the top view area of the light emitting element 120 may be between 1 and 1.35, but may also be less than 1 or greater than 1.35.

In one embodiment, the wavelength conversion layer 130 is made of sulfide (Sulfide), yttrium aluminum garnet (YAG), LuAG, silicate (Silicate), nitride (Nitride), oxynitride (Oxynitride), fluorine Made of Fluoride, TAG, KSF, KTF and other materials.

The adhesive 140 is, for example, a light-transmitting adhesive. The adhesive 140 includes a first side portion 141 and a thermal resistance layer 142. The first side portion 141 covers a part of the side 120s of the light emitting element 120, and the other part or the remaining part of the side 120s is covered by the reflective layer 150. As seen from the top view of FIG. 1, the first side portion 141 has a closed ring shape, which surrounds the entire side surface 120 s of the light emitting element 120. In another embodiment, the first side portion 141 may have an open ring shape.

As shown in the enlarged view of FIG. 1, the thermal resistance layer 142 of the adhesive 140 is formed between the high-density conversion layer 131 and the light-emitting element 120, which can increase the thermal resistance between the light-emitting element 120 and the wavelength conversion layer 130 to slow down The aging rate of the wavelength conversion layer 130. Further, the light-emitting element 120 emits heat during operation. If the heat is easily transferred to the wavelength conversion layer 130, the fluorescent particles in the light-emitting element 120 may easily deteriorate. In contrast, in the embodiment of the present invention, due to the formation of the thermal resistance layer 142, the heat transferred to the wavelength conversion layer 130 can be reduced, and the aging rate of the wavelength conversion layer 130 can be slowed down. In an embodiment, the thickness of the thermal resistance layer 142 may be between 1 and 1000, and the values therein may or may not include 1 and 1000.

The reflective layer 150 is formed on the substrate 110 and covers the side 120s of the light emitting element 120, the side 141s of the first side 141 of the adhesive 140, and the side 130s of the wavelength conversion layer 130, which can effectively protect the light emitting element 120 and the wavelength conversion layer 130. Avoid being exposed and easily damaged. The reflective layer 150 can reflect the light L1 emitted from the side 120 s of the light emitting element 120 to the wavelength conversion layer 130 to increase the light extraction efficiency of the light emitting device 100.

As shown in FIG. 1, the reflective layer 150 further covers the side of the first electrode 121, the side of the second electrode 122, the side of the third electrode 112, and the side of the fourth electrode 113, which can protect the first electrode 121 more completely. The second electrode 122, the third electrode 112, and the fourth electrode 113 are protected from environmental damage, such as oxidation and moisture.

There is a first gap G1 between the first electrode 121 and the second electrode 122, and a second gap G2 between the third electrode 112 and the fourth electrode 113. The reflective layer 150 includes a filling portion 152 that fills the first interval G1 and/or the second interval G2.

The reflective layer 150 includes a first reflective portion 151 that surrounds the side 120 s of the light emitting element 120. The first reflecting portion 151 has a first reflecting surface 151 s, which faces the side surface 120 s of the light emitting element 120 and/or the wavelength conversion layer 130 to reflect the light L1 emitted from the side surface 120 s of the light emitting element 120 to the wavelength conversion layer 130. In this embodiment, the first reflective surface 151s is a convex surface facing the side surface 120s of the light emitting element 120 and/or the wavelength conversion layer 130, but it may also be a concave surface.

As shown in FIG. 1, the convex first reflective surface 151 s connects the lower surface 130 b of the wavelength conversion layer 130 and the side surface 120 s of the light emitting element 120. In this way, the contact probability of the light L1 of the light emitting element 120 and the convex surface can be increased, so that the light L1 from the side 120s of the light emitting element 120 is almost or completely reflected by the reflective layer 150 to the wavelength conversion layer 130 to emit light, so as to increase the light emitting device 100 Light efficiency.

In an embodiment, the reflectivity of the reflective layer 150 may be greater than 90%. The material of the reflective layer 150 can be made of polyphthalamide (PPA), polyamide (PA), polytrimethylene terephthalate (PTT), polyethylene terephthalate (PET), polypara It is composed of 1,4-cyclohexane dimethanol phthalate (PCT), epoxy glue compound (EMC), silicone compound (SMC) or other high reflectivity resin/ceramic materials. In addition, the reflective layer 150 may be white glue.

In summary, compared to the conventional light-emitting device, due to the design of the light-emitting device 100 of the embodiment of the present invention, the light-emitting area can be increased by about 40%, and the brightness can be increased by about 15%.

FIG. 2 is a cross-sectional view of a light emitting device 200 according to another embodiment of the invention. The light emitting device 200 includes a substrate 110, a light emitting element 120, a wavelength conversion layer 130, an adhesive 140, and a reflective layer 150.

Unlike the above-mentioned light-emitting device 100, the top view area of the wavelength conversion layer 130 of the light-emitting device 200 of this embodiment is substantially equal to the top view area of the light-emitting element 120, that is, the top view area of the wavelength conversion layer 130 and the top view area of the light-emitting element 120 The ratio is about 1. In addition, since the first side portion 141 of the adhesive 140 is removed, the entire side 120s of the light emitting element 120 and the entire side 142s of the thermal resistance layer 142 of the adhesive 140 are exposed, so that the reflective layer 150 can cover the light emitting element 120 The entire side 120s and the entire side 142s of the thermal resistance layer 142. Furthermore, since the side 120s of the light emitting element 120, the side 130s of the wavelength conversion layer 130, and the side 142s of the thermal resistance layer 142 of the adhesive 140 can be formed in the same cutting process, the side 120s, the side 130s, and the side 142s are substantially aligned Or flush.

FIG. 3 is a cross-sectional view of a light emitting device 300 according to another embodiment of the invention. The light emitting device 300 includes a substrate 110, a light emitting element 120, a wavelength conversion layer 130, an adhesive 140, and a reflective layer 150.

Different from the above-mentioned light-emitting device 100, the reflective layer 150 of the light-emitting device 300 of this embodiment further covers the side 110s of the substrate 110, so as to avoid or reduce external environmental factors (such as air, moisture, etc.) through the side 110s to the substrate 110 Of violations. Further, since the reflective layer 150 covers the side 110s of the substrate 110, the length of the path P1 of the external environment and the electrodes of the light emitting element 120 (such as the first electrode 121 and/or the second electrode 122) can be increased (compared to the first The path P1 in FIG. 1, the path P1 in this embodiment has a longer length), thereby reducing the probability of environmental factors infringing the electrodes of the light emitting element 120, so as to improve the reliability and lifespan of the light emitting device 300.

In another embodiment, the top view area of the wavelength conversion layer 130 of the light emitting device 300 may be substantially equal to the top view area of the light emitting element 120, which is similar to the structure of the above light emitting device 200, and will not be repeated here.

FIG. 4 shows a cross-sectional view of a light emitting device 400 according to another embodiment of the invention. The light emitting device 400 includes a substrate 110, a plurality of light emitting elements 120, a wavelength conversion layer 130, an adhesive 140, and a reflective layer 150. These light emitting elements 120 are disposed on the substrate 110. The adhesive 140 covers at least a part of the side 120s of each light emitting element 120.

Unlike the light-emitting device of the previous embodiment, part of the adhesive 140 of the light-emitting device 400 of this embodiment is formed between two adjacent light-emitting elements 120. For example, the adhesive 140 further includes a second side portion 143, which is located between two adjacent light emitting elements 120, and the second side portion 143 has a lower surface 143s, wherein the lower surface 143s is a convex surface, but may also be a concave surface. The reflective layer 150 is formed between two adjacent light emitting elements 120. For example, the reflective layer 150 further includes a second reflective portion 153, wherein the second reflective surface 153s is located between two adjacent light emitting elements 120. The second reflecting portion 153 has a second reflecting surface 153s conforming to the lower surface 143s, so the second reflecting surface 153s is concave. In another embodiment, the lower surface 143s may be a concave surface, and the second reflective surface 153s is a convex surface. The second reflective surface 153s can reflect the light L2 of the light emitting element 120 to the wavelength conversion layer 130 to increase the light extraction efficiency of the light emitting device 400.

In another embodiment, the reflective layer 150 of the light-emitting device 400 can further cover the side 110s of the substrate 110, which is similar to the structure of the light-emitting device 300 described above and will not be repeated here.

In another embodiment, the top view area of the wavelength conversion layer 130 of the light emitting device 400 may be substantially equal to the top view area of the light emitting element 120, which is similar to the structure of the above light emitting device 200, and will not be repeated here.

5A to 5H are diagrams illustrating the manufacturing process of the light emitting device 100 of FIG. 1.

As shown in FIG. 5A, a wavelength conversion layer material 130' may be formed on a carrier 10 using, for example, dispensing technology. The wavelength conversion layer material 130' includes a plurality of fluorescent particles 133. The polarity of the carrier 10 is different from that of the wavelength conversion layer material 130', so the wavelength conversion layer material 130' and the carrier 10 can be easily separated in the subsequent manufacturing process. In addition, although not shown in the drawings, the carrier 10 may include double-sided tape and a carrier board, wherein the double-sided tape is provided on the carrier board to receive the wavelength conversion layer material 130'.

As shown in FIG. 5B, after leaving the wavelength conversion layer material 130' for a period of time, such as 24 hours, some or most of the fluorescent particles 133 are deposited on the bottom of the wavelength conversion layer material 130' to form a high-density conversion layer 131, the remaining fluorescent particles 133 are dispersed on the remaining part of the wavelength conversion layer material 130' to form a low-density conversion layer 132. So far, the wavelength conversion layer 130 including the high-density conversion layer 131 and the low-density conversion layer 132 is formed.

Then, the wavelength conversion layer 130 may be heated to cure the wavelength conversion layer 130, thereby fixing the positions of the fluorescent particles 133, and preventing the density distribution of the fluorescent particles 133 in the wavelength conversion layer 130 from being randomly changed.

Then, the carrier 10 and the wavelength conversion layer 130 can be separated to expose the high density conversion layer 131 of the wavelength conversion layer 130.

As shown in FIG. 5C, a substrate 110 and at least one light emitting element 120 are provided, wherein the light emitting element 120 is disposed on the substrate 110. In addition, the substrate 110 may be disposed on another carrier 10', wherein the structure of the carrier 10' is similar to that of the carrier 10 described above, and will not be repeated here.

Next, the high-density conversion layer 131 of the wavelength conversion layer 130 and the light-emitting element 120 are bonded with adhesive 140. The following is further illustrated with a diagram.

As shown in FIG. 5D, for example, coating or dispensing technology may be used to form the adhesive 140 on the upper surface 120u of the light emitting element 120.

As shown in FIG. 5E, the wavelength conversion layer 130 is provided on the adhesive 140 so that the adhesive 140 bonds the light emitting element 120 and the high-density conversion layer 131 of the wavelength conversion layer 130. Since the wavelength conversion layer 130 presses the adhesive 140, the adhesive 140 flows toward the two sides of the light emitting element 120, and the first side portion 141 is formed. Due to the surface tension factor, the side surface 141s of the first side portion 141 forms a concave surface. However, depending on the amount of glue and/or the characteristics of the adhesive 140, the side surface 141s may also be convex. In addition, depending on the amount and/or characteristics of the adhesive 140, the first side portion 141 may cover at least a portion of the side 120s of the light emitting element 120.

As shown in the enlarged view of FIG. 5E, the adhesive 140 remaining between the wavelength conversion layer 130 and the light emitting element 120 forms a thermal resistance layer 142. The thermal resistance layer 142 can reduce the amount of heat transferred from the light emitting element 120 to the wavelength conversion layer 130, thereby slowing down the aging rate of the wavelength conversion layer 130.

As shown in FIG. 5F, for example, a knife cutting technique may be used to form at least one first cutting lane W1 passing through the wavelength conversion layer 130 to cut off the wavelength conversion layer 130. In this embodiment, the first cutting path W1 does not pass through the first side portion 141 of the adhesive 140, but may also pass through part of the first side portion 141. The first scribe line W1 forms a side surface 130s on the wavelength conversion layer 130, which may be flat or curved.

The width of the cutter used to form the first cutting lane W1 may be substantially equal to the width of the first cutting lane W1. Alternatively, after the first cutting lane W1 is formed, the double-sided tape (not shown) of the carrier 10' can be appropriately stretched to open the distance between the adjacent two light-emitting elements 120; under this design, a thin cutter can be used to form The first cutting lane W1.

As shown in FIG. 5G, for example, a molding technique may be used to form a fluid reflective layer 150 above the substrate 110, wherein the reflective layer 150 covers the light emitting element 120 through the first scribe line W1 (shown in FIG. 5F) Part of the side 120s, the side 130s of the wavelength conversion layer 130 and the side 141s of the first side 141 of the adhesive 140, the side of the third electrode 112 and the side of the fourth electrode 113 of the substrate 110 and the first electrode of the light emitting element 120 The side surface of 121 and the side surface of the second electrode 122.

In addition, the reflective layer 150 includes a first reflective portion 151 that surrounds the entire side 120 s of the light emitting element 120. The first reflecting portion 151 has a first reflecting surface 151s. Since the side surface 141s of the adhesive 140 is a concave surface, the first reflective surface 151s covering the side surface 141s forms a convex surface toward the wavelength conversion layer 130 and the light emitting element 120. The protruding first reflective surface 151s can reflect the light emitted from the side surface 120s to the wavelength conversion layer 130 to increase the light extraction efficiency of the light emitting device 100.

Since the first scribe line W1 does not pass the first side portion 141 of the adhesive 140 in the step of FIG. 5F, the first reflective surface 151s of the reflective layer 150 can contact the lower surface 130b of the wavelength conversion layer 130. In this way, the convex first reflective surface 151s connects the lower surface 130b of the high-density conversion layer 131 and the side surface 120s of the light emitting element 120, thereby increasing the light L1 emitted from the light emitting element 120 and the convex surface (first reflective surface 151s) Contact area.

Then, the reflective layer 150 can be cured by heating.

As shown in FIG. 5H, for example, a cutter cutting technique may be used to form at least one second cutting lane W2 passing through the reflective layer 150 and the substrate 110. The second scribe line W2 forms a side surface 150s and a side surface 110s on the reflective layer 150 and the substrate 110, wherein the side surface 150s and the side surface 110s are substantially aligned or flush. So far, the light emitting device 100 shown in FIG. 1 is formed.

In another embodiment, the second scribe line W2 may pass through the wavelength conversion layer 130, the reflective layer 150, and the substrate 110, so that the wavelength conversion layer 130, the reflective layer 150, and the substrate 110 respectively form a side 130s, a side 150s, and a side 110s, wherein The side 130s, the side 150s, and the side 110s are substantially aligned or flush.

In addition, the width of the cutter used to form the second cutting lane W2 may be substantially equal to the width of the second cutting lane W2. Alternatively, after the second cutting lane W2 is formed, the double-sided tape (not shown) of the carrier 10' can be appropriately stretched to open the distance between the adjacent two light-emitting elements 120; under this design, a thin cutter can be used to form Second cutting lane W2.

6A to 6C illustrate another manufacturing process diagram of the light emitting device 100 of FIG. 1.

As shown in FIG. 6A, for example, coating or dispensing technology may be used to form the adhesive 140 on the high-density conversion layer 131 of the wavelength conversion layer 130.

As shown in FIG. 6B, the substrate 110 and the light emitting element 120 shown in FIG. 5C are disposed on the adhesive 140, wherein the light emitting element 120 contacts the adhesive 140, so that the adhesive 140 bonds the light emitting element 120 and the wavelength conversion layer 130之High density conversion layer 131.

Since the light-emitting element 120 presses the adhesive 140, the adhesive 140 flows toward the two sides of each light-emitting element 120 to form the first side portion 141. Due to the surface tension factor, the side surface 141s of the first side portion 141 forms a concave surface. Depending on the amount and/or characteristics of the adhesive 140, the first side portion 141 may cover at least a part of the side 120s of the light emitting element 120. In addition, as shown in the enlarged view of FIG. 6B, the adhesive 140 remaining between the wavelength conversion layer 130 and the light emitting element 120 forms a thermal resistance layer 142. The thermal resistance layer 142 can reduce the amount of heat transferred from the light emitting element 120 to the wavelength conversion layer 130, thereby slowing down the aging rate of the wavelength conversion layer 130.

As shown in FIG. 6C, the light emitting element 120, the wavelength conversion layer 130, and the substrate 110 are inverted so that the wavelength conversion layer 130 faces upward.

The following steps are similar to the corresponding steps in the manufacturing process of the light-emitting device 100 shown in FIGS. 5A to 5H, and will not be repeated here.

7A to 7C illustrate the manufacturing process diagram of the light emitting device 200 of FIG. 2.

First of all, the structure of FIG. 5E may be formed first using steps similar to the above FIGS. 5A to 5E, or the structure of FIG. 6C may be formed first using the steps of FIGS. 6A to 6C.

Then, as shown in FIG. 7A, for example, a cutter cutting technique may be used to form at least one first scribe line W1 through the wavelength conversion layer 130 and the first side portion 141 covering the side surface 120s of the light emitting element 120 to cut off the wavelength conversion Layer 130 and cut off the first side 141. Since the first scribe line W1 cuts off the first side portion 141, the entire side surface 120s of the light emitting element 120 and the entire side surface 142s of the thermal resistance layer 142 of the adhesive 140 are exposed.

As shown in FIG. 7B, a molding technique may be used, for example, to form a fluid reflective layer 150 above the substrate 110, wherein the reflective layer 150 covers the light emitting element 120 via the first scribe line W1 (shown in FIG. 7A) The entire side 120s, the entire side 142s of the thermal resistance layer 142, the entire side 130s of the wavelength conversion layer 130, the side of the third electrode 112 and the side of the fourth electrode 113 of the substrate 110, and the side of the first electrode 121 of the light emitting element 120 and The side of the second electrode 122.

Then, the reflective layer 150 can be cured by heating.

As shown in FIG. 7C, for example, a cutter cutting technique may be used to form at least one second cutting lane W2 passing through the reflective layer 150 and the substrate 110. The second scribe line W2 forms a side surface 150s and a side surface 110s on the reflective layer 150 and the substrate 110, wherein the side surface 150s and the side surface 110s are substantially aligned or flush. So far, the light emitting device 200 shown in FIG. 2 is formed.

8A to 8C illustrate the manufacturing process diagram of the light emitting device 300 of FIG. 3.

First of all, the structure of FIG. 5E may be formed first using steps similar to the above FIGS. 5A to 5E, or the structure of FIG. 6C may be formed first using the steps of FIGS. 6A to 6C.

Then, as shown in FIG. 8A, for example, a cutter cutting technique may be used to form at least one first scribe line W1 passing through the wavelength conversion layer 130 and the substrate 110 to cut off the wavelength conversion layer 130 and the substrate 110. The first scribe line W1 forms a side 130s and a side 110s on the wavelength conversion layer 130 and the substrate 110, respectively, wherein the side 130s and the side 110s are substantially aligned or flush.

As shown in FIG. 8B, for example, a dispensing technique may be used to form a fluid reflective layer 150 above the substrate 110, wherein the reflective layer 150 covers the light emitting element 120 through the first scribe line W1 (shown in FIG. 8A) Partial side 120s, side 130s of the wavelength conversion layer 130, side 141s of the first side 141 of the adhesive 140, side 110s of the substrate 110, side of the third electrode 112 and side of the fourth electrode 113 of the substrate 110, and light emission The side surface of the first electrode 121 and the side surface of the second electrode 122 of the element 120.

Then, the reflective layer 150 can be cured by heating.

As shown in FIG. 8C, for example, a cutter cutting technique may be used to form at least one second cutting lane W2 passing through the reflective layer 150, wherein the second cutting lane W2 forms a side surface 150s on the reflective layer 150. So far, the light emitting device 300 shown in FIG. 3 is formed.

In another embodiment, the second scribe line W2 may pass through the wavelength conversion layer 130, the reflective layer 150, and the substrate 110, so that the wavelength conversion layer 130, the reflective layer 150, and the substrate 110 respectively form a side 130s, a side 150s, and a side 110s, wherein The side 130s, the side 150s, and the side 110s are substantially aligned or flush.

9A to 9F show the manufacturing process diagram of the light emitting device 400 of FIG. 4.

As shown in FIG. 9A, a substrate 110 and a plurality of light-emitting elements 120 are provided, wherein the light-emitting elements 120 are disposed on the substrate 110.

As shown in FIG. 9A, the substrate 110 and the light emitting elements 120 are provided on the carrier board 10'.

As shown in FIG. 9B, for example, coating or dispensing technology may be used to form the adhesive 140 on the upper surface 120u of the light emitting element 120.

As shown in FIG. 9C, the wavelength conversion layer 130 is provided on the adhesive 140 so that the adhesive 140 bonds the light emitting element 120 and the high-density conversion layer 131 of the wavelength conversion layer 130. Since the wavelength conversion layer 130 presses the adhesive 140, the adhesive 140 flows toward the two sides of the light emitting element 120, and the first side portion 141 is formed. The first side portion 141 has a side surface 141s. Due to surface tension, the side surface 141s is concave. However, depending on the amount and/or characteristics of the adhesive 140, the side surface 141s may also be a convex surface facing the substrate 110. In addition, depending on the amount of glue 140, the first side portion 141 may cover at least a part of the side 120s of the light emitting element 120.

As shown in the enlarged view of FIG. 9C, the adhesive 140 remaining between the wavelength conversion layer 130 and the light-emitting element 120 forms a thermal resistance layer 142. The thermal resistance layer 142 can reduce the amount of heat transferred from the light emitting element 120 to the wavelength conversion layer 130, thereby slowing down the aging rate of the wavelength conversion layer 130.

In addition, the adhesive 140 further includes a second side portion 143 formed between the two adjacent light-emitting elements 120. The second side portion 143 has a lower surface 143s. Due to the surface tension, the lower surface 143s faces the convex surface of the substrate 110. However, depending on the amount and/or characteristics of the adhesive 140, the lower surface 143s may also be a concave surface facing the substrate 110.

As shown in FIG. 9D, for example, a cutter cutting technique may be used to form at least one first cutting lane W1 passing through the wavelength conversion layer 130 to cut off the wavelength conversion layer 130. In this embodiment, the first cutting path W1 does not pass through the first side portion 141 of the adhesive 140, but may also pass through a part of the first side portion 141 or the entire first side portion 141.

As shown in FIG. 9E, a dispensing technique may be used, for example, to form a fluid reflective layer 150 above the substrate 110, wherein the reflective layer 150 covers the light emitting element 120 through the first scribe line W1 (shown in FIG. 9D) Partial side 120s, side 130s of the wavelength conversion layer 130, side 141s of the first side 141 of the adhesive 140, lower surface 143s of the second side 143, side 130s of the wavelength conversion layer 130, third electrode of the substrate 110 The side surface of 112 and the side surface of the fourth electrode 113 and the side surface of the first electrode 121 and the side surface of the second electrode 122 of each light emitting element 120.

In addition, the reflective layer 150 includes a first reflective portion 151 and a second reflective portion 153, wherein the first reflective portion 151 covers the first side portion 141, and the second reflective portion 153 covers the second side portion 143. The first reflecting portion 151 has a first reflecting surface 151s conforming to the side surface 141s. Since the side surface 141s is a concave surface, the first reflecting surface 151s is a convex surface. The second reflecting portion 153 has a second reflecting surface 153s conforming to the lower surface 143s. Since the lower surface 143s is a convex surface, the second reflecting surface 153s is a concave surface.

Then, the reflective layer 150 can be cured by heating.

As shown in FIG. 9F, for example, a cutter cutting technique may be used to form at least one second cutting lane W2 passing through the reflective layer 150 and the substrate 110. The second scribe line W2 forms a side surface 150s and a side surface 110s on the reflective layer 150 and the substrate 110, wherein the side surface 150s and the side surface 110s are substantially aligned or flush. So far, the light-emitting device 400 shown in FIG. 4 is formed.

In another embodiment, the second scribe line W2 may pass through the wavelength conversion layer 130, the reflective layer 150, and the substrate 110, so that the wavelength conversion layer 130, the reflective layer 150, and the substrate 110 respectively form a side 130s, a side 150s, and a side 110s, wherein The side 130s, the side 150s, and the side 110s are substantially aligned or flush.

In yet another embodiment, the light-emitting device 400 may adopt a manufacturing process similar to FIGS. 7A to 7B, so that the reflective layer 150 covers the side 120s of the at least one light-emitting element 120, the side 142s of the thermal resistance layer 142, and the side of the wavelength conversion layer 130 130s.

In other embodiments, the light-emitting device 400 may adopt a manufacturing process similar to FIGS. 8A to 8B, so that the reflective layer 150 covers the side 110s of the substrate 110.

In summary, although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention belongs can make various modifications and retouching without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be subject to the scope defined in the appended patent application.

10, 10'‧‧‧ carrier 100, 200, 300, 400 ‧‧‧ light emitting device 110‧‧‧ substrate 111‧‧‧ base material 111u‧‧‧ first surface 111b‧‧‧ second surface 112‧‧‧ Three-electrode 113‧‧‧ Fourth electrode 114‧‧‧First pad 115‧‧‧Second pad 116‧‧‧‧ First conductive column 117‧‧‧ Second conductive column 120‧‧‧‧Light-emitting element 120u‧‧ ‧Top surface 121‧‧‧First electrode 122‧‧‧Second electrode 110s, 120s, 130s, 141s, 142s, 150s‧Side side 130‧‧‧ Wavelength conversion layer 130′‧‧‧wavelength conversion layer material 130b, 143s‧‧‧Lower surface 131‧‧‧High-density conversion layer 132‧‧‧Low-density conversion layer 133‧‧‧ Fluorescent particles 140‧‧‧Viscose 141‧‧‧First side 142‧‧‧Thermal resistance layer 143‧‧‧Second side part 150‧‧‧Reflective layer 151‧‧‧First reflection part 151s‧‧‧First reflection surface 152‧‧‧Fill part 153‧‧‧Second reflection part 153s‧‧‧Second Reflecting surface G1‧‧‧ First interval G2‧‧‧ Second interval L1‧‧‧ Light P1‧‧‧ Path T1, T2‧‧‧ Thickness W1‧‧‧ First cutting path W2‧‧‧ Second cutting path

FIG. 1 is a cross-sectional view of a light-emitting device according to an embodiment of the invention. FIG. 2 is a cross-sectional view of a light emitting device according to another embodiment of the invention. FIG. 3 is a cross-sectional view of a light emitting device according to another embodiment of the invention. FIG. 4 is a cross-sectional view of a light emitting device according to another embodiment of the invention. 5A to 5H show the manufacturing process diagram of the light-emitting device of FIG. 1. 6A to 6C show another manufacturing process diagram of the light emitting device of FIG. 1. 7A to 7C illustrate the manufacturing process diagram of the light emitting device of FIG. 2. 8A to 8C illustrate the manufacturing process diagram of the light emitting device of FIG. 3. 9A to 9F are drawings showing the manufacturing process of the light-emitting device of FIG. 4.

100‧‧‧Lighting device

110‧‧‧ substrate

111‧‧‧ Base material

111u‧‧‧First surface

111b‧‧‧Second surface

112‧‧‧third electrode

113‧‧‧ Fourth electrode

114‧‧‧ First pad

115‧‧‧ Second pad

116‧‧‧The first conductive column

117‧‧‧Second conductive column

120‧‧‧Lighting element

120s, 130s, 141s

120u‧‧‧upper surface

121‧‧‧First electrode

122‧‧‧Second electrode

130‧‧‧wavelength conversion layer

130b‧‧‧Lower surface

131‧‧‧High density conversion layer

132‧‧‧Low density conversion layer

140‧‧‧Viscose

141‧‧‧The first side

142‧‧‧Thermal resistance layer

150‧‧‧Reflective layer

151‧‧‧First Reflection Department

152‧‧‧Filling Department

151s‧‧‧First reflection surface

G1‧‧‧ First interval

G2‧‧‧Second interval

L1‧‧‧Light

P1‧‧‧path

T1, T2‧‧‧thickness

Claims (9)

A light-emitting device includes: a substrate; a light-emitting element, including a semiconductor structure and two electrodes, the light-emitting element is mounted on the substrate through the electrodes and is electrically connected to the substrate, the electrodes are located on the semiconductor structure and the Between substrates, and the semiconductor structure includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a wavelength conversion layer with a uniform thickness And at least covers an upper surface of the light-emitting element; an adhesive layer is provided between the wavelength conversion layer and the light-emitting unit; a reflective layer is provided on the substrate and has a reflective surface, the reflective surface surrounds A side surface contacting the light emitting element and a side surface of the adhesive layer, wherein the reflective layer fills the gap between the light emitting element and the substrate, wherein the light emitting device includes a flat side surface, and the flat side surface The reflective layer and the substrate are included. A light-emitting device includes: a substrate; a light-emitting element, including a light-emitting element body and two electrodes, the light-emitting element body is mounted on the substrate through the electrodes and is electrically connected to the substrate; a reflective layer is provided on the On the substrate and surrounding the light emitting element, wherein the reflection The layer fills in the gap between the light-emitting element and the substrate; a wavelength conversion layer having a uniform thickness, and covering at least an upper surface of the light-emitting element and at least a portion of the reflective layer; and an adhesive layer provided on Between the wavelength conversion layer and the light emitting unit, wherein the reflective layer has a reflective surface, the reflective surface contacts a side surface of the light emitting element and a side surface of the adhesive layer, wherein the light emitting device includes a flat side surface , The flat side surface includes the reflective layer. A light-emitting device includes: a substrate; a light-emitting element, including a light-emitting element body and two electrodes, the light-emitting element body is mounted on the substrate through the electrodes and is electrically connected to the substrate; a wavelength conversion layer has a Uniform thickness and covering at least an upper surface of the light-emitting element; an adhesive layer disposed between the wavelength conversion layer and the light-emitting unit; and a reflective layer disposed on the substrate and having a reflective surface, the The reflective surface circumferentially contacts one side surface of the light emitting element, one side surface of the adhesive layer and one side surface of the wavelength conversion layer, wherein the reflective layer fills the gap between the light emitting element and the substrate; wherein the The light emitting device includes a flat side surface, and the flat side surface includes the reflective layer. The light-emitting device as described in item 1 or 2 or 3 of the patent application, wherein the wavelength conversion layer includes a high-density conversion layer and a low-density conversion layer. The light-emitting device as described in item 4 of the patent application range, wherein the high-density conversion layer is located between the low-density conversion layer and the light-emitting element. The light-emitting device as described in item 1 or 2 or 3 of the patent application, wherein the adhesive layer further extends to a part of the side surface of the light-emitting unit. The light-emitting device as described in item 1 or 2 of the patent application, wherein the flat side surface further includes the substrate. The light-emitting device as described in item 6 of the patent application range, wherein the reflective surface is inclined to the side surface of the light-emitting element. The light-emitting device as recited in item 8 of the patent application range, wherein the reflective surface includes a convex surface that faces the side surface of the light-emitting element and/or the wavelength conversion layer.

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