JP5322801B2 - 半導体発光装置及びその製造方法 - Google Patents
半導体発光装置及びその製造方法 Download PDFInfo
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- JP5322801B2 JP5322801B2 JP2009146467A JP2009146467A JP5322801B2 JP 5322801 B2 JP5322801 B2 JP 5322801B2 JP 2009146467 A JP2009146467 A JP 2009146467A JP 2009146467 A JP2009146467 A JP 2009146467A JP 5322801 B2 JP5322801 B2 JP 5322801B2
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- 239000004065 semiconductor Substances 0.000 title claims description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims description 87
- 239000010410 layer Substances 0.000 claims description 86
- 239000011241 protective layer Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 16
- 230000004888 barrier function Effects 0.000 claims description 14
- 230000000630 rising effect Effects 0.000 claims description 14
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 18
- 229920005989 resin Polymers 0.000 description 18
- 239000011347 resin Substances 0.000 description 18
- 238000005486 sulfidation Methods 0.000 description 13
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 8
- 229910052946 acanthite Inorganic materials 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 8
- 229940056910 silver sulfide Drugs 0.000 description 8
- 239000012298 atmosphere Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
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- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000004132 cross linking Methods 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000006023 eutectic alloy Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005987 sulfurization reaction Methods 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 241000220317 Rosa Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical class [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- -1 sulfide ions Chemical class 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
Claims (7)
- 少なくとも1つ以上のLED素子と、
前記LED素子を実装するための基板と、
前記基板の前記LED素子を実装する面上に形成され、前記LED素子から入射する光を反射する反射膜と
を有し、
前記反射膜は、前記基板側から順に、密着層、拡散バリア層、Ag又はAg合金で形成される反射層、及び、保護層の積層構造を備え、かつ、前記基板に平行な基板水平部と、前記基板表面から法線方向に立ち上がる端部とが形成された形状とされ、
前記端部の前記基板表面から立ち上がった先端までの高さは、0.6μm〜10μmの範囲で、前記反射膜の膜厚よりも高く形成されており、
前記LED素子は、前記反射膜の前記基板水平部上又は前記端部上に設置されている
半導体発光装置。 - 前記保護層は、前記反射膜の最表面に設けられ、可視光域で透光性を有する材料で形成されている請求項1記載の半導体発光装置。
- 前記反射層は、Bi、Au、Pd、Cu、Pt、Nd、Geの中の少なくとも1種を含有するAg合金からなる請求項1又は2記載の半導体発光装置。
- LED素子を実装するための基板を準備する工程と、
前記基板の前記LED素子を実装する側の表面上にレジストパターンを形成する工程と、
反射膜を前記レジストパターンの上面と側面及び露出した基板上面に成膜する反射膜形成工程と、
レジスト剥離液に浸漬して前記レジストパターンを剥離することにより、前記基板表面から法線方向に立ち上がる形状の端部と、前記露出した基板上面に形成した基板水平部とからなる反射膜にするリフトオフ工程と、
前記LED素子を前記反射膜の前記基板水平部上又は前記端部上に設置する工程と
を有し、
前記反射膜形成工程は、前記基板側から順に、密着層、拡散バリア層、Ag又はAg合金で形成される反射層、及び、保護層を成膜して、積層構造を形成する工程を備えるとともに、前記レジストパターンの側面にはレジストパターン上面より薄く反射膜を成膜する
半導体発光装置の製造方法。 - 前記反射膜を成膜する工程は、スパッタリングにより反射膜を成膜する請求項4記載の半導体発光装置の製造方法。
- 前記レジストパターンは、逆テーパー形状を有する請求項4又は5記載の半導体発光装置の製造方法。
- 前記レジストパターンを形成する工程は、画像反転機能を有するポジ型レジストを用いたフォトリソグラフィにより行われる請求項4〜6のいずれか1項に記載の半導体発光装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2009146467A JP5322801B2 (ja) | 2009-06-19 | 2009-06-19 | 半導体発光装置及びその製造方法 |
US12/817,564 US8373187B2 (en) | 2009-06-19 | 2010-06-17 | Semiconductor light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2009146467A JP5322801B2 (ja) | 2009-06-19 | 2009-06-19 | 半導体発光装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011003777A JP2011003777A (ja) | 2011-01-06 |
JP5322801B2 true JP5322801B2 (ja) | 2013-10-23 |
Family
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JP2009146467A Active JP5322801B2 (ja) | 2009-06-19 | 2009-06-19 | 半導体発光装置及びその製造方法 |
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US (1) | US8373187B2 (ja) |
JP (1) | JP5322801B2 (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI596796B (zh) * | 2010-03-30 | 2017-08-21 | Dainippon Printing Co Ltd | Light-emitting diode lead frame or substrate, semiconductor device, and light-emitting diode lead frame or substrate manufacturing method |
US8933548B2 (en) | 2010-11-02 | 2015-01-13 | Dai Nippon Printing Co., Ltd. | Lead frame for mounting LED elements, lead frame with resin, method for manufacturing semiconductor devices, and lead frame for mounting semiconductor elements |
JP2013105546A (ja) * | 2011-11-10 | 2013-05-30 | Ulvac Japan Ltd | 有機el表示装置、led装置、太陽電池、反射膜 |
JP2013182975A (ja) * | 2012-03-01 | 2013-09-12 | Sharp Corp | 発光装置及びこれを用いたバックライトシステム |
JP2013187400A (ja) * | 2012-03-08 | 2013-09-19 | Unistar Opto Corp | ジャンパ線のない発光ダイオードライトモジュール |
JP6149469B2 (ja) * | 2012-04-04 | 2017-06-21 | 東レ株式会社 | 白色フィルム |
JP5609925B2 (ja) | 2012-07-09 | 2014-10-22 | 日亜化学工業株式会社 | 発光装置 |
JP6123215B2 (ja) * | 2012-10-05 | 2017-05-10 | 日亜化学工業株式会社 | 発光装置 |
US20160260880A1 (en) * | 2012-11-27 | 2016-09-08 | Citizen Electronics Co., Ltd. | Light-emitting device using mounting substrate |
JPWO2014083714A1 (ja) * | 2012-11-27 | 2017-01-05 | シチズン電子株式会社 | 実装基板及びこの実装基板を用いた発光装置 |
CN103943616B (zh) * | 2013-01-22 | 2017-04-12 | 浙江中宙照明科技有限公司 | 一种led发光装置 |
JP6232792B2 (ja) | 2013-07-17 | 2017-11-22 | 日亜化学工業株式会社 | 発光装置 |
JP6888650B2 (ja) * | 2013-12-13 | 2021-06-16 | 日亜化学工業株式会社 | 発光装置 |
JP6048528B2 (ja) * | 2015-04-03 | 2016-12-21 | 日亜化学工業株式会社 | 発光装置 |
JP5983836B2 (ja) * | 2015-07-31 | 2016-09-06 | 日亜化学工業株式会社 | 半導体装置 |
JP6633111B2 (ja) * | 2018-02-19 | 2020-01-22 | アルパッド株式会社 | 発光ユニット及び半導体発光装置 |
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JP2008053564A (ja) * | 2006-08-25 | 2008-03-06 | Matsushita Electric Ind Co Ltd | 光半導体装置およびその製造方法 |
JP4858032B2 (ja) | 2006-09-15 | 2012-01-18 | 日亜化学工業株式会社 | 発光装置 |
JP2008091831A (ja) | 2006-10-05 | 2008-04-17 | Toshiba Corp | Led用サブマウント基板およびそれを用いた発光装置並びにled用サブマウント基板の製造方法 |
JP2008091818A (ja) | 2006-10-05 | 2008-04-17 | Matsushita Electric Ind Co Ltd | 光半導体装置用リードフレームおよびこれを用いた光半導体装置、並びにこれらの製造方法 |
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2009
- 2009-06-19 JP JP2009146467A patent/JP5322801B2/ja active Active
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