TWI505501B - 包含窗層與導光結構之半導體發光裝置 - Google Patents
包含窗層與導光結構之半導體發光裝置 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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Description
圖1繪示一薄膜覆晶半導體發光裝置,其在美國專利第7,256,483號中更詳細地描述,該案以引用的方式併入本文中。如本文中使用,用語「GaN」可表示任何III-N材料。
圖1之LED係成長在一成長基板上。通常而言,使用習知技術,一相對厚的(大約1微米至2微米)未摻雜的或n型GaN層係成長在一藍寶石成長基板上。亦可使用其他基板,例如SiC、Si、SiCOI及ZnO。在磷化鎵(III-P)LED之情況下,該成長基板通常係GaAs或Ge。該相對厚的GaN層通常包含一低溫成核層及一個或多個額外層,以便為n型披覆層及作用層提供一低缺陷晶格結構。接著在厚n型層上形成一個或多個n型披覆層16,繼而形成一作用層18、一個或多個p型層20,該p型層20包含一個或多個披覆層及一p型接觸層。
使用各種技術以增進對該等n層之電接取。在一覆晶實例中,例如圖1繪示的該裝置,p層及作用層之部分係經蝕刻以暴露用於金屬化之一n層。以此方式,p接觸件及n接觸件係在該晶片之相同側且可直接電附著至封裝基板接觸墊。起初,來自該n金屬接觸件的電流自側面流過該n層。相比之下,在一垂直注入(非覆晶)LED中,一n接觸件係形成在該晶片之一側,而p接觸件係形成在該晶片之另一側。移除一電絕緣基板,以暴露內埋的傳導類型層,經常為一n型層。至p或n接觸件之一者之電接觸通常係由一引線接合或一金屬橋製造,且其他接觸件係直接接合至一封裝基板接觸墊。
在圖1繪示的該覆晶中,在蝕刻以暴露一n型層之後,形成n接觸件金屬50及p接觸件金屬24。n接觸件50及p接觸件24可包含接合金屬、擴散阻障或其他層以保護該接觸件之光學性質。該p金屬化24可高度反射由該作用層發出的光。在該等接觸件形成之後,一裝置晶圓可切割成個別裝置。
接著金屬化層接合至在該封裝基板12上之金屬接觸墊22。該接合技術可係焊接、熱壓縮、相互擴散或由一超聲焊接接合的一金凸塊陣列。
該封裝基板12可由該電絕緣材料AlN形成,其中使用通孔28及/或金屬迹線而連接金接觸墊22至可焊電極26。另一選擇為,若鈍化以防止短路,則該封裝基板12可由一傳導材料形成,例如陽性氧化的AlSiC。該封裝基板12可係熱傳導的以作為一散熱器或以將熱量傳導至一更大散熱器。最後,該LED可具有附著之透鏡蓋,或用一磷光體(用於轉換藍或紫外光以產生一白光)予以塗佈,或進一步處理,且若適於特別應用,則該封裝可焊接至一印刷電路板。
一側填滿材料52可沈積在該LED下方之空隙內,以減少穿越該LED之熱梯度,增加附著之機械強度,及防止污染物接觸LED材料。
在將該裝置接合至該封裝基板之後,藉由適於該基板材料之一技術移除成長基板;舉例而言,藉由雷射剝落、蝕刻或磨薄(lapping)。藉由移除該基板所暴露的該半導體結構可變薄,接著選用地粗糙化或圖案化。一磷光體材料可沈積在LED晶粒上面。舉例而言,一陶瓷磷光板可藉由一有機黏著劑附著至該LED晶粒。
在圖1繪示的該裝置中,在一晶圓切割成個別裝置之後執行很多製造步驟。在該裝置中可包含有機材料,舉例而言,如側填滿材料或將附著該陶瓷磷光體。
根據本發明之實施例之裝置係藉由一程序製造,在其中在晶圓切割成個別裝置之前,大多數步驟係發生在晶圓級。該製造程序可消除有機材料之需求。
根據本發明之實施例,一種裝置包含一半導體結構,該半導體結構包括配置在一n型區與一p型區之間的一發光層。該半導體結構係配置在一窗層與一導光結構之間。該導光結構係經組態以將光導引朝向該窗層;合適的導光結構之實例包含一多孔半導體層及一光子晶體。一n接觸件係電連接至該n型區,且一p接觸件係電連接至該p型區。該p接觸件係配置在形成於該半導體結構內的一開口中。
在本發明之一些實施例中,於一系列晶圓級(而非晶粒級)步驟中製造一薄膜覆晶半導體發光裝置。晶圓級製造可比晶粒級製造更可靠且耗時更少。並且,本發明之實施例亦不需要有機材料。排除有機材料消除與有機材料相關聯的問題(例如泛黃),且可增加裝置製造或操作的溫度。
圖2至圖5繪示根據本發明之實施例之一裝置的製造。在圖2中,一半導體結構32係成長在一合適的成長基板30(經常為GaN、Al2
O3
或SiC)上。半導體結構32包含夾在一n型區與一p型區之間之一發光區或作用區。該n型區通常係在該p型區之前成長該基板上。
該n型區可包含不同組合物及摻雜濃度之多個層,舉例而言,該多個層包含:製備層,諸如緩衝層或成核層,此等層可係n型或非有意摻雜的;脫模層(release layer),此等層經設計以促進以後脫模該成長基板或在基板移除之後使該半導體結構變薄;及n型元件層甚至p型元件層,此等層經設計用於該發光區所要的特別光學或電學性質以有效率地發射光。
該發光區係成長在該n型區上面。合適之發光區的實例包含一單一厚或薄發光層及一多量子井發光區,多量子井發光區包含由阻障層分離的多個薄或厚量子井發光層。舉例而言,一多量子井發光區可包含由GaN或InGaN阻障分離的多個InGaN發光層。在該裝置內之一個或多個發光層可摻雜有(舉例而言)Si,或該或該等發光層係非有意摻雜。
該p型區係成長在該發光區上。如同該n型區,該p型區可包含不同組合物、厚度及摻雜濃度之多個層,該多個層包含非有意摻雜的層或n型層。
使用一習知的薄膜沈積技術(例如真空蒸鍍、濺鍍及電子束沈積),並且可後續接著空氣中退火,在半導體結構32之頂層(大體上為該p型區)上形成一傳導接合層34。用於傳導接合層34之合適材料係最低限度光學吸收由該半導體結構之該發光層發出的波長,係足夠傳導以非明顯地增加該裝置之串聯電阻,及與半導體結構32之該頂層形成一歐姆接觸。舉例而言,合適的材料包含透明傳導氧化物,例如銦錫氧化物(ITO)、氧化鋅及氧化釕。舉例而言,在一些實施例中,接合層34厚度可為200奈米至1微米之間,並在一些實施例中,厚度大約500奈米。在一些實施例中,接合層34係一厚透明傳導層,例如一旋塗或凝膠材料。在一些實施例中,接合層34之折射率接近半導體結構32或窗層40之折射率。在其中任何接合層之折射率係低的實施例中,可藉由高折射率與低折射率材料之間之介面的隨機結構化或圖案結構化而改良功率傳輸。
如圖3所繪示,一個或多個渠溝36係蝕刻穿過接合層34及半導體結構32,完全地或部分地下至成長基板30。渠溝36可界定個別裝置之邊界。藉由習知的圖案化步驟及蝕刻步驟形成渠溝36。
在圖4中,圖3繪示的該結構係接合至一窗層。舉例而言,窗層40可係一波長轉換結構(諸如一陶瓷磷光體)、一合適的透明基板或載體(諸如一藍寶石或玻璃層)或一濾光器(諸如一分佈式布拉格(Bragg)反射器),其用於修改一光譜以提供一所需的顏色,例如用於信號燈之琥珀色。陶瓷磷光體在美國專利第7,361,938號中更詳細地描述,該案以引用的方式併入本文中。較佳地,窗層40係足夠厚以准許在移除該成長基板之後該窗層/半導體結構組合之晶圓級處理。在一些實施例中,窗層40厚度可在80微米至1毫米之間,在一些實施例中,在100微米至500微米之間,及在一些實施例中,在100微米至200微米之間。
若傳導接合層34及窗層40係不適於接合,則在接合之前,在窗層40上或在傳導接合層34上形成一透明接合層38。接合層38可使用相同藍接合層34的材料,然而此非必須。接合層38可係一透明傳導氧化物、一非傳導玻璃材料或其他介電材料,諸如氮化矽。舉例而言,接合層38可係厚度在200奈米至1微米之間(厚度通常係約500奈米)的一ITO層、鈉鈣玻璃、硼矽酸鹽或其他似玻璃層。另一選擇為,接合層38可係一透明有機材料,例如苯並環丁烯(BCB)、旋塗玻璃或矽酮樹脂。一波長轉換材料(諸如一磷光體)可配置在接合層38內。舉例而言,一發紅磷光體可配置在接合層38內,且一發黃或綠磷光體(諸如鈰摻雜釔鋁石榴石)可佈置在窗層40中(上),使得自該裝置發出的複合光顯現溫暖的白色。另一選擇為,一磷光體混合物可佈置在一矽酮樹脂接合層38內,以提供所需光譜。在此等裝置中,窗層40可係透明的。在一些實施例中,接合層38係圖案化的或粗糙化的,其可增加來自該裝置之光提取。其他合適的接合材料在公佈的美國專利申請案第2006-0105478號題為「Bonding an Optical Element to a Light Emitting Device」中描述,且該案以引用方式併入本文中。舉例而言,在一些實施例中,接合層38係極薄的,在數十埃之厚度級。此一接合層38充當用於該傳導接合層34或該窗層40或兩者之一表面改質劑。此接合層可係如沈積之透明層,或可係一非透明層,其起化學反應以將該等層接合在一起及變成透明之兩者。合適的薄接合層之實例包含薄金屬層,其等層可熱擴散以接合至一ITO接合層34及薄二氧化矽接合層38,或可係使用氧化物至氧化物接合技術予以接合。
如圖4由箭頭42所示,舉例而言,接合層34及38藉由陽極接合(anodic bonding)而接合,經由親水表面之電漿製備而直接接合,或經由一中間接合層之使用而接合。
如圖5所繪示,藉由適於該基板材料之一製程移除成長基板30。可藉由雷射剝落移除一藍寶石基板。可藉由蝕除一犧牲層之蝕刻、碾磨或剝落以移除基板。該n型區之該底部表面係藉由移除該基板而暴露。舉例而言,可係藉由光電化學蝕刻,以移除不需要的材料或由於基板移除而損壞的材料,而使該n型區變薄。
由該發光層產生的該等光線大約係等向分佈且很多光線無法自該半導體逸出進入該(等)接合層。如圖5所繪示,藉由將半導體結構32的該n型區的剩餘厚度之一部分製成多孔,以重新導引此等光線。多孔區44大體上係電傳導且熱傳導,且經設計以將光散射朝向窗層40且遠離一稍後形成的n接觸件。散射量由該多孔層之厚度及孔隙率予以決定。該多孔層大體上具有在0.5微米至40微米之間之一厚度。該多孔層可具有在5%至80%之一孔隙率,且經常具有在20%至40%之一孔隙率。孔隙率之下限受限於該多孔層散射光能力且孔隙率之上限受限於多孔層之電阻率及機械穩定性。合適的孔隙率可與該多孔區之該厚度有關。為了提供相同散射量,一更厚多孔區的孔數可少於一更薄多孔區的孔數。由一多孔層反射及散射的該等光線將具有導引垂直於表面的最大強度之一朗伯(Lambertian)輻射圖案。
可藉由一種兩步驟製程形成多孔層44。在第一步驟中,藉由一電化學陽極蝕刻產生該等孔。在此步驟中,決定多孔區之深度。在該第二步驟中,藉由一光化學陽極蝕刻擴大該等孔,直到達到該所需孔隙率。一多孔層可如下形成:晶圓係藉由(例如)銀膏連接至一銅板。一種材料(諸如聚四氟乙烯(Teflon))隔離待製成多孔的晶圓之部分。晶圓係暴露於一合適電解液,例如0.5M H2
SO4
,作為在一標準電化電池中的工作電極,該標準電化電池具有如引用的一飽和甘汞電極(SCE)及一鉑反電極。該電池係由一恆電位儀控制。施加一強正電位(15V SCE)導致在表面缺陷亞微米坑以相距微米級蝕刻。此等坑作為用於蝕刻似隧道結構之次表面網路之出發點。該蝕刻首先在該等隧道末端發生,使得該網路更深成長但是該等隧道不擴大及合併。移除的材料量首要係時間積分電流密度之一函數,然而蝕刻溶液、偏壓電壓及基板摻雜影響孔密度及尺寸。多孔結構之所得深度係所有此等變化之一函數。
在一光化學陽極蝕刻第二步驟之一實例中,在一施加的2V SCE正電位下,使用自一氙燈50mW/cm2
次能隙光,使該電氣化學蝕刻的晶圓暴露於一H2
O:H2
SO4
:H2
O2
電解液。該施加的電位太低而致使上述的陽極蝕刻程序無法發生,且僅在該電解液半導體介面吸收該次能隙光,所以首要效果係增加在第一步驟中界定的層之該孔隙率。該孔隙率度由該時間積分電流密度予以決定,該電流密度係光強度、蝕刻液濃度及基板參數之一函數。可藉由上述的程序將任何合適的半導體材料製成多孔的,諸如Si、GaN、SiC及GaP。對於多孔區,二元材料(諸如GaP及GaN)係有吸引力的候選,然而三元及四元III族磷化物及III族氮化物材料亦可製成多孔的。在半導體材料中的傳導類型及摻雜濃度可影響多孔層之特性,舉例而言,藉由影響形成的該等孔之尺寸及間隔。在一些實施例中,多孔區自一n型GaN層形成,其被摻雜有在零(非有意地摻雜)與1019
cm-3
之間之一摻雜濃度。
可用將光重新導引朝向窗層40之任何結構來代替多孔區44。舉例而言,並非製成多孔的,藉由移除該基板而暴露的該n型區之該表面可被粗糙化或紋理化而具有(舉例而言)一光子晶體結構。另一選擇為,可由一反射材料(諸如一反射金屬或塗層)代替多孔區44。
暴露接合層34之一個或多個開口可蝕刻穿過該半導體結構,接著形成接觸件,且晶圓被分離成個別裝置。圖6中繪示附著至一安裝座的一完成裝置。一開口54係蝕刻穿過多孔區44、非多孔n型區49、發光區48及p型區46,以暴露傳導接合層34。傳導接合層34充當至該p型區之電接觸件。n接觸件金屬58係形成在多孔區44之剩餘部分上,且p接觸件金屬60係形成在傳導接合層34之暴露的部分上。可藉由介電層56電隔離n接觸件金屬58及p接觸件金屬60。
該裝置可附著至任何合適的表面。圖6中繪示之該裝置係安裝在一安裝座12上,其係類似於附隨圖1之本文先前技術部分描述的上述封裝基板。n互連件64及p互連件62將該裝置上之該n接觸件58及該p接觸件60連接至安裝座12上的接觸件22。舉例而言,在安裝座12上的頂側接觸件22係藉由傳導柱28連接至底側接觸件26。舉例而言,互連件可係元素金屬、焊接、金屬合金、半導體-金屬合金、熱傳導膏及電傳導膏或化合物(諸如環氧樹脂)、在異種金屬之間的共晶接合點(諸如Pd-In-Pd),或金凸塊。
根據本發明之實施例之裝置可具有多個優勢。在先前技術部分及圖1中描述之該裝置中,很多製造步驟係晶粒級步驟;亦即,在將一晶圓切割成個別裝置之後執行該等步驟。舉例而言,將該裝置附著至一封裝基板,側填滿該裝置、移除成長基板、使暴露的半導體表面變薄或紋理化及在該裝置上面放置一磷光體材料係晶粒級步驟。舉例而言,晶粒級步驟可係耗時且難以控制,例如在該封裝基板上精確放置每一晶粒及在適當的位置施配精確的側填滿材料量。在本發明之一些實施例中,幾乎所有的加工步驟係晶圓級步驟,而非晶粒級步驟。晶圓級步驟比晶粒級步驟可更不耗時且更易控制。
在先前技術部分描述之該裝置可包含有機材料,舉例而言,在基板移除期間作為支撐該LED晶粒之一側填滿材料,或作為將一陶瓷磷光層附著至該裝置之一黏著劑。有機材料係成問題的,因為當有機材料暴露在熱與光下時可降解,該降解可限制裝置操作溫度,或不合需要地改變自裝置發出之光的色點。根據本發明之實施例之裝置不需要有機側填滿材料或黏著劑。
另外,在先前技術部分描述之該裝置中,將一陶瓷磷光體附著至LED晶粒之一有機黏著層厚度可為10微米至15微米。該厚黏著劑可將可觀量光導引出該裝置之側,而非導引出該裝置之頂部,該側為用於光離開該裝置之較佳表面。過量側光可消極地影響離開該裝置之光之顏色均一性及色點。在本發明之實施例中,該LED晶粒與該窗層之間的接合厚度為1微米,該接合可顯著地減少自該裝置發出的側光量。再者,與一有機黏著劑傳導熱量相比,一些接合材料(諸如ITO)可更有效地傳導在一陶瓷磷光窗層中產生的熱量穿過該LED晶粒至該安裝表面。
在先前技術部分描述之該裝置中,該封裝基板係必需的,以在基板移除期間,防止損壞該半導體裝置。由於在該成長基板移除期間或之後,窗層40提供對該半導體結構的機械支撐,因此不需要一封裝基板或其他安裝座。圖7繪示無一封裝基板之一裝置。在該半導體結構上形成的n接觸件58及p接觸件60係藉由一個或多個介電層56及66、接合金屬層63及65及傳導互連件62及64而重新分配至大面積接觸件68及70。舉例而言,介電層56及66可係SiNx
。在本文附圖6中描繪互連件62及64。舉例而言,接合金屬層63及65可係一Al/Ni/Au合金。舉例而言,大面積接觸件68及70可係金。
在圖1中繪示的該裝置中,配置在該作用區18與反射p接觸件24之間的p型區20係薄的,其可藉由引入不合需要的空腔諧振而減少該裝置之效率。在本發明之實施例中,該非多孔的n型區49比p型區20更厚,因此未引起空腔諧振。空腔諧振之消除或減少可緩解在該作用區與該反射接觸件之間之該半導體厚度限制,且可容許該作用區更厚成長、具有更厚層或具有更多層。
在一些實施例中,在接合之前,一陶瓷磷光體窗層40與一半導體晶圓顏色匹配。在將該窗層接合至半導體晶圓之前或之後,可藉由雷射修整該陶瓷磷光體,而調整由特別的陶瓷磷光體窗層/半導體晶圓組合發出的光之色點。
前文已詳細描述本發明,熟習此技術者應意識到,考慮到本發明,在不背離本文描述的本發明理念之精神下可對本發明作出修改。因此,不希望本發明範圍限制於繪示的及描述的該等特定實施例。
12...封裝基板(圖1)
12...安裝座(圖6)
16...n型披覆層
18...作用層
20...p型層
22...金屬接觸墊
24...p接觸件金屬/p接觸件/p金屬化
26...可焊電極
28...通孔/傳導柱
30...成長基板
32...半導體結構
34...傳導接合層
36...渠溝
38...矽酮樹脂接合層
40...窗層
44...多孔區/導光結構
46...p型區
48...發光區
49...非多孔n型區
50...n接觸件金屬/n接觸件
52...側填滿材料
54...開口
56...介電層
58...n接觸件金屬/n接觸件
60...p接觸件金屬/p接觸件
62...p互連件
63...接合金屬層
64...n互連件
65...接合金屬層
66...介電層
68...大面積接觸件
70...大面積接觸件
圖1係一薄膜覆晶半導體發光裝置之一剖面圖;
圖2係一裝置之一部分之一剖面圖,該裝置包含在一成長基板上成長的一半導體結構;
圖3係圖2之結構在穿過該接合層及半導體結構蝕刻渠溝之後的一剖面圖;
圖4繪示將一半導體發光裝置接合至一窗層;
圖5繪示在移除該成長基板及形成一多孔區之後,得自於圖4之接合結構;
圖6繪示一半導體發光裝置連接至一安裝座;及
圖7繪示具有在一堆疊之金屬層及介電層上形成的大面積接觸件之一半導體發光裝置。
12...安裝座
22...金屬接觸墊
26...可焊電極
28...傳導柱
34...傳導接合層
38...矽酮樹脂接合層
40...窗層
44...多孔區
46...p型區
48...發光區
49...非多孔n型區
54...開口
56...介電層
58...n接觸件金屬
60...p接觸件金屬
62...p互連件
64...n互連件
Claims (14)
- 一種發光裝置,其包括:一半導體結構,其包括配置在一n型區與一p型區之間之一發光層;一窗層(window layer);一導光結構,其經組態以將光導引朝向該窗層;及一n接觸件(contact),該n接觸件電連接至該n型區,及一p接觸件,該p接觸件電連接至該p型區;其中:該半導體結構係配置在該窗層與該導光結構之間;該導光結構係形成在該n型區中;一透明傳導氧化物(transparent conductive oxide)係配置在該p型區與該窗層之間,且與該p型區直接接觸;及該p接觸件係配置在形成於該半導體結構中之一開口內。
- 如請求項1之裝置,其中該透明傳導氧化物係銦錫氧化物(indium tin oxide)、氧化鋅(zinc oxide)及氧化釕(ruthenium oxide)之其中一者。
- 如請求項1之裝置,其中配置在該p型區與該窗層之間之所有層之一組合厚度少於2微米。
- 如請求項1之裝置,其中該p接觸件係配置為在一開口內與該透明傳導氧化物直接接觸,該開口經蝕刻穿過該半 導體結構以暴露該透明傳導氧化物。
- 如請求項1之裝置,進一步包括配置在該透明傳導氧化物與該窗層之間之一額外透明接合層。
- 如請求項5之裝置,進一步包括配置在該額外透明接合層中之一波長轉換材料。
- 如請求項5之裝置,其中在該額外透明接合層與該透明傳導氧化物之間之一介面經調適以散射光。
- 如請求項5之裝置,其中該額外透明接合層係一透明傳導氧化物、一非傳導玻璃材料、一介電材料、氮化矽、ITO、鈉鈣玻璃、硼矽酸鹽玻璃、一有機材料、苯並環丁烯、旋塗玻璃及矽酮樹脂之一者。
- 如請求項1之裝置,其中在該窗層與該p型區之間之一接合實質上無有機材料。
- 如請求項1之裝置,其中該窗層包括一波長轉換材料,該波長轉換材料經組態以吸收由該發光層發出的光及發出具有一不同波長的光。
- 如請求項1之裝置,其中該窗層包括一陶瓷磷光體(ceramic phosphor)。
- 如請求項1之裝置,其中該導光結構包括一多孔半導體層及形成於該n型區之一表面之一光子晶體之一者。
- 如請求項1之裝置,其中該發光層係一III族氮化物層。
- 如請求項1之裝置,其中該半導體結構係配置在該開口之任一側(either side)上。
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EP2308107A1 (en) | 2011-04-13 |
CN105870271A (zh) | 2016-08-17 |
EP2308107B1 (en) | 2020-03-25 |
JP2017059858A (ja) | 2017-03-23 |
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US20190189838A1 (en) | 2019-06-20 |
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US20100019260A1 (en) | 2010-01-28 |
JP2016021592A (ja) | 2016-02-04 |
JP6074005B2 (ja) | 2017-02-01 |
WO2010010485A1 (en) | 2010-01-28 |
US10147843B2 (en) | 2018-12-04 |
CN102106004B (zh) | 2016-07-06 |
JP2011529267A (ja) | 2011-12-01 |
TW201027795A (en) | 2010-07-16 |
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