JP6023660B2 - 半導体発光素子及び半導体発光装置 - Google Patents
半導体発光素子及び半導体発光装置 Download PDFInfo
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- JP6023660B2 JP6023660B2 JP2013113916A JP2013113916A JP6023660B2 JP 6023660 B2 JP6023660 B2 JP 6023660B2 JP 2013113916 A JP2013113916 A JP 2013113916A JP 2013113916 A JP2013113916 A JP 2013113916A JP 6023660 B2 JP6023660 B2 JP 6023660B2
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Description
第1導電型の第1半導体層と、前記第1半導体層上に配置された発光層と、前記発光層上に配置され、前記第1導電型と逆の第2導電型を有する第2半導体層とを含む半導体積層と、
前記半導体積層の前記第2半導体層側から前記発光層を貫通して形成され、前記第1半導体層を露出する、複数のビア孔と、
前記第2半導体層の周縁および前記複数のビア孔それぞれから離隔されて、前記第2半導体層上に延在し、光反射性を有する第2半導体側電極と、
前記複数のビア孔それぞれの底面の少なくとも一部を露出し、少なくとも前記発光層、第2半導体層の前記ビア孔内側面を覆い、前記第2半導体側電極の周縁部を覆う絶縁層と、
前記複数のビア孔それぞれの底部で前記第1半導体層と電気的に接続し、前記絶縁層を介して、前記第2半導体層及び前記第2半導体側電極の上方に引き出され、前記第2半導体側電極に平面視上オーバーラップして配置され、光反射性を有する複数の第1半導体側電極と、
を有する
半導体発光素子
が提供される。
p型GaN系半導体層4の上にAgを主成分として含むp側反射電極層5を形成する。Agは、可視光に対して高い反射率を示す。Ag原子がマイグレーション(拡散)すると、リーク等の原因となる。オーミック性を確保し、Agのマイグレーションを抑制するために、AgにTi等を添加する。Ag層とp型GaN系半導体層との間に、薄いTi層、ITO(インジウム錫酸化物)層等の透明導電層を形成してもよい。p側反射電極層5の上に、ビア孔エッチングを行なうために、パターン化した酸化シリコン膜等のエッチングマスクEMを形成する。
3 発光層 4 p型半導体層
5 p側電極 HL 開口
6 フリンジ層 7 p側高反射層
8 p側拡散防止層 9 p側高反射キャップ層
10 絶縁キャップ層 12 絶縁フロート層
13 n側電極 14 導電層
14n n側キャップ層(n側接続電極) 14p p側キャップ層(p側接続電極)
CV 凹部(空洞) CH コンタクトホール
IS 電極間絶縁層 En n側電極
Ep p側電極 21 支持基板
22 絶縁層
23 配線ないし電極(23p、23np、23n)
24 グレア光吸収層 25 保護膜
26 裏面金属層 31A、31B 半導体素子
41 パッケージ基板 42 接合材
43p、43n ボンディングワイヤー 44p、44n 給電用パッド
45 蛍光体層
Claims (10)
- 第1導電型の第1半導体層と、前記第1半導体層上に配置された発光層と、前記発光層上に配置され、前記第1導電型と逆の第2導電型を有する第2半導体層とを含む半導体積層と、
前記半導体積層の前記第2半導体層側から前記発光層を貫通して形成され、前記第1半導体層を露出する、複数のビア孔と、
前記第2半導体層の周縁および前記複数のビア孔それぞれから離隔されて、前記第2半導体層上に延在し、光反射性を有する第2半導体側電極と、
前記複数のビア孔それぞれの底面の少なくとも一部を露出し、少なくとも前記発光層、第2半導体層の前記ビア孔内側面を覆い、前記第2半導体側電極の周縁部を覆う絶縁層と、
前記複数のビア孔それぞれの底部で前記第1半導体層と電気的に接続し、前記絶縁層を介して、前記第2半導体層及び前記第2半導体側電極の上方に引き出され、前記第2半導体側電極に平面視上オーバーラップして配置され、光反射性を有する複数の第1半導体側電極と、
を有する半導体発光素子。 - 前記第1半導体側電極は、前記ビア孔内に空洞部を画定する請求項1に記載の半導体発光素子。
- 前記複数の第1半導体側電極の各々は、径10μm未満の接触面積を有する、請求項1または2に記載の半導体発光素子。
- 前記複数の第1半導体側電極の全接触面積は半導体層面積に対して1%未満の接触面積割合を有する請求項1〜3のいずれか1項に記載の半導体発光素子。
- 前記複数の第1半導体側電極の各々は、オーミック性促進電極層とAg反射電極層の積層を含む、請求項1〜4のいずれか1項に記載の半導体発光素子。
- 前記オーミック性促進電極層は、膜厚5nm以下のTi層である請求項5に記載の半導体発光素子。
- 前記複数の第1半導体側電極は行列形状に配置された主要部を含む、請求項1〜6のいずれか1項に記載の半導体発光素子。
- 支持基板と、
前記支持基板上に形成され、最上層に反射金属層を有する、複数部分を含む配線層と、
前記配線層の隣接する部分に跨って配設された複数の半導体発光素子と、
を有し、
前記複数の半導体発光素子の各々は、請求項1〜7のいずれか1項に記載の半導体発光素子である、半導体発光装置。 - さらに、
前記複数の半導体発光素子を覆って形成され、蛍光体粉末を含む封止樹脂層と、
を有する請求項8に記載の半導体発光装置。 - さらに、
前記配線層の複数部分の内、最外部に配置された2つの部分の上において、ボンディング領域を囲むように形成された光吸収層と、
を有する、請求項8又は9に記載の半導体発光装置。
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PCT/JP2014/002538 WO2014192237A1 (ja) | 2013-05-30 | 2014-05-14 | 半導体発光素子及び半導体発光装置 |
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EP14803813.6A EP3007238B1 (en) | 2013-05-30 | 2014-05-14 | Semiconductor light-emitting element and semiconductor light-emitting device |
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JP2016143682A (ja) * | 2015-01-29 | 2016-08-08 | 豊田合成株式会社 | Iii族窒化物半導体発光素子 |
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JP2017009725A (ja) * | 2015-06-19 | 2017-01-12 | ソニー株式会社 | 表示装置 |
KR102412409B1 (ko) | 2015-10-26 | 2022-06-23 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법 |
JP6692155B2 (ja) * | 2015-12-15 | 2020-05-13 | スタンレー電気株式会社 | 半導体発光素子アレイおよび車両用灯具 |
US10170671B2 (en) * | 2016-05-25 | 2019-01-01 | Chen-Fu Chu | Methods of filling a flowable material in a gap of an assembly module |
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US10535641B2 (en) * | 2017-06-30 | 2020-01-14 | Nichia Corporation | Light emitting device and method of manufacturing same |
JP7218048B2 (ja) * | 2018-05-24 | 2023-02-06 | スタンレー電気株式会社 | 半導体発光装置及びその製造方法 |
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KR102276207B1 (ko) | 2021-07-12 |
US20160087149A1 (en) | 2016-03-24 |
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WO2014192237A1 (ja) | 2014-12-04 |
EP3007238B1 (en) | 2020-04-01 |
EP3007238A4 (en) | 2016-12-07 |
KR20160016846A (ko) | 2016-02-15 |
BR112015029612A2 (pt) | 2017-07-25 |
JP2014232841A (ja) | 2014-12-11 |
CN105247695A (zh) | 2016-01-13 |
CN105247695B (zh) | 2019-04-12 |
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