BR112015029612A2 - dispositivo de emissão de luz de semicondutor - Google Patents

dispositivo de emissão de luz de semicondutor

Info

Publication number
BR112015029612A2
BR112015029612A2 BR112015029612A BR112015029612A BR112015029612A2 BR 112015029612 A2 BR112015029612 A2 BR 112015029612A2 BR 112015029612 A BR112015029612 A BR 112015029612A BR 112015029612 A BR112015029612 A BR 112015029612A BR 112015029612 A2 BR112015029612 A2 BR 112015029612A2
Authority
BR
Brazil
Prior art keywords
type layer
layer
light
side electrode
emitting device
Prior art date
Application number
BR112015029612A
Other languages
English (en)
Inventor
Miyachi Mamoru
Saito Tatsuma
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Publication of BR112015029612A2 publication Critical patent/BR112015029612A2/pt

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
    • F21S41/10—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source
    • F21S41/14—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
    • F21S41/141—Light emitting diodes [LED]
    • F21S41/151—Light emitting diodes [LED] arranged in one or more lines
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
    • F21S41/30—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by reflectors
    • F21S41/32—Optical layout thereof
    • F21S41/33—Multi-surface reflectors, e.g. reflectors with facets or reflectors with portions of different curvature
    • F21S41/337—Multi-surface reflectors, e.g. reflectors with facets or reflectors with portions of different curvature the reflector having a structured surface, e.g. with facets or corrugations
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    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

resumo patente de invenção: "dispositivo de emissão de luz de semicondutor". um dispositivo de emissão de luz de semicondutor inclui um laminado de semicondutor contendo uma camada tipo n, uma camada de emissão de luz, e uma camada tipo p, furos de via penetrando a camada tipo p, e as camadas de emissão de luz expondo a camada tipo n, um eletrodo de lado p se prolongando na camada tipo p e tendo refletividade de luz, que é separado de cada uma das bordas de delimitação da camada tipo p e a pluralidade de furos de via, uma camada de isolamento que cobre as superfícies laterais do furo de via, e se prolonga na camada tipo p, e que se prolonga na porção de borda de delimitação do eletrodo de lado p, e eletrodos de lado n que são eletricamente conectados à camada tipo n nos fundos dos furos de via, que são conduzidos acima da camada tipo p, e o eletrodo de lado p com a camada de isolamento intervindo entre eles, que sobrepõe o eletrodo de lado p sem folgas, em uma vista plana, e que tem refletividade de luz.
BR112015029612A 2013-05-30 2014-05-14 dispositivo de emissão de luz de semicondutor BR112015029612A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013113916A JP6023660B2 (ja) 2013-05-30 2013-05-30 半導体発光素子及び半導体発光装置
PCT/JP2014/002538 WO2014192237A1 (ja) 2013-05-30 2014-05-14 半導体発光素子及び半導体発光装置

Publications (1)

Publication Number Publication Date
BR112015029612A2 true BR112015029612A2 (pt) 2017-07-25

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Application Number Title Priority Date Filing Date
BR112015029612A BR112015029612A2 (pt) 2013-05-30 2014-05-14 dispositivo de emissão de luz de semicondutor

Country Status (7)

Country Link
US (1) US20160087149A1 (pt)
EP (1) EP3007238B1 (pt)
JP (1) JP6023660B2 (pt)
KR (1) KR102276207B1 (pt)
CN (1) CN105247695B (pt)
BR (1) BR112015029612A2 (pt)
WO (1) WO2014192237A1 (pt)

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TWI660524B (zh) * 2018-07-17 2019-05-21 友達光電股份有限公司 發光裝置及其製造方法
US11664363B2 (en) * 2018-10-17 2023-05-30 Seoul Viosys Co., Ltd. Light emitting device and method of manufacturing the same
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JP2020126995A (ja) * 2019-02-06 2020-08-20 シャープ株式会社 半導体レーザ素子及びその製造方法
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CN114284411B (zh) * 2021-12-01 2023-09-01 厦门三安光电有限公司 发光二极管及其制备方法

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CN105247695A (zh) 2016-01-13
EP3007238A1 (en) 2016-04-13
WO2014192237A1 (ja) 2014-12-04
KR20160016846A (ko) 2016-02-15
CN105247695B (zh) 2019-04-12
KR102276207B1 (ko) 2021-07-12
JP2014232841A (ja) 2014-12-11
EP3007238B1 (en) 2020-04-01
EP3007238A4 (en) 2016-12-07

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