BRPI0819933A2 - método, e, dispositivo - Google Patents

método, e, dispositivo

Info

Publication number
BRPI0819933A2
BRPI0819933A2 BRPI0819933-7A BRPI0819933A BRPI0819933A2 BR PI0819933 A2 BRPI0819933 A2 BR PI0819933A2 BR PI0819933 A BRPI0819933 A BR PI0819933A BR PI0819933 A2 BRPI0819933 A2 BR PI0819933A2
Authority
BR
Brazil
Prior art keywords
semiconductor structure
contacts
less
type region
algainp light
Prior art date
Application number
BRPI0819933-7A
Other languages
English (en)
Inventor
I. Aldaz Rafael
E. Epler John
N. Grillot Patrick
R. Krames Michael
Original Assignee
Koninklijke Phlips Electronics N.V.
Philips Lumileds Lighting Company, Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Phlips Electronics N.V., Philips Lumileds Lighting Company, Llc filed Critical Koninklijke Phlips Electronics N.V.
Publication of BRPI0819933A2 publication Critical patent/BRPI0819933A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

método, e, dispositivo é descrito um dispositivo emissor de luz algainp que é formado como um dispositivo de chip articulado fino. o dispositivo inclui uma estrutura semicondutora compreendendo uma camada de emissão de luz algainp (24) disposta entre uma região tipo n (22) e uma região tipo p (26). contatos n e p (34, 32) eletricamente conectados nas regiões tipo n e p são ambos formados no mesmo lado da estrutura semicondutora. a estrutura semi condutora é conectada no apoio ( 40) via os contatos. o substrato de crescimento é removido da estrutura semi condutora e o substrato transparente espesso é omitido, de maneira tal que a espessura total das camadas semicondutoras no dispositivo seja menor que 15 mim em algumas modalidades, menor que 1 o mim em algumas modalidades. o lado superior da estrutura semicondutora pode ser texturizado.
BRPI0819933-7A 2007-12-14 2008-12-15 método, e, dispositivo BRPI0819933A2 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/956,984 US20090173956A1 (en) 2007-12-14 2007-12-14 Contact for a semiconductor light emitting device
US11/956984 2007-12-14
PCT/IB2008/055315 WO2009077974A2 (en) 2007-12-14 2008-12-15 Contact for a semiconductor light emitting device

Publications (1)

Publication Number Publication Date
BRPI0819933A2 true BRPI0819933A2 (pt) 2019-02-26

Family

ID=40404263

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0819933-7A BRPI0819933A2 (pt) 2007-12-14 2008-12-15 método, e, dispositivo

Country Status (9)

Country Link
US (2) US20090173956A1 (pt)
EP (1) EP2220695A2 (pt)
JP (1) JP5496104B2 (pt)
KR (2) KR20150139630A (pt)
CN (1) CN101897048B (pt)
BR (1) BRPI0819933A2 (pt)
RU (1) RU2491683C2 (pt)
TW (2) TWI528577B (pt)
WO (1) WO2009077974A2 (pt)

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US20100327300A1 (en) * 2009-06-25 2010-12-30 Koninklijke Philips Electronics N.V. Contact for a semiconductor light emitting device
DE102009051746A1 (de) * 2009-09-30 2011-03-31 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP2011165799A (ja) * 2010-02-08 2011-08-25 Showa Denko Kk フリップチップ型発光ダイオード及びその製造方法、並びに発光ダイオードランプ
JP5693375B2 (ja) * 2010-05-28 2015-04-01 シチズンホールディングス株式会社 半導体発光素子
KR101194844B1 (ko) * 2010-11-15 2012-10-25 삼성전자주식회사 발광소자 및 그 제조방법
DE102011012924A1 (de) * 2011-03-03 2012-09-06 Osram Opto Semiconductors Gmbh Träger für eine optoelektronische Struktur und optoelektronischer Halbleiterchip mit solch einem Träger
US10074778B2 (en) * 2011-03-22 2018-09-11 Seoul Viosys Co., Ltd. Light emitting diode package and method for manufacturing the same
RU2597071C2 (ru) 2011-05-24 2016-09-10 Конинклейке Филипс Н.В. МЕТАЛЛИЧЕСКИЙ НАПОЛНИТЕЛЬ, РАЗДЕЛЯЮЩИЙ СЛОИ р- И n-ТИПА, ДЛЯ СВЕТОИЗЛУЧАЮЩИХ ДИОДОВ, МОНТИРУЕМЫХ МЕТОДОМ ПЕРЕВЕРНУТОГО КРИСТАЛЛА
JP5887638B2 (ja) * 2011-05-30 2016-03-16 億光電子工業股▲ふん▼有限公司Ｅｖｅｒｌｉｇｈｔ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 発光ダイオード
KR101939333B1 (ko) * 2011-10-07 2019-01-16 서울바이오시스 주식회사 발광 다이오드 패키지
CN103022334B (zh) * 2012-12-21 2016-01-13 映瑞光电科技(上海)有限公司 一种高压倒装led芯片及其制造方法
JP6306308B2 (ja) * 2013-09-19 2018-04-04 株式会社東芝 半導体発光装置
CN106030938B (zh) * 2014-02-25 2020-05-19 皇家飞利浦有限公司 具有吸除剂层的发光半导体器件
JP6462274B2 (ja) * 2014-08-21 2019-01-30 株式会社東芝 半導体発光素子
KR102376468B1 (ko) 2014-12-23 2022-03-21 엘지이노텍 주식회사 적색 발광소자 및 조명장치
US20160293811A1 (en) * 2015-03-31 2016-10-06 Cree, Inc. Light emitting diodes and methods with encapsulation
CN105489732B (zh) * 2015-12-08 2017-12-22 天津三安光电有限公司 垂直发光二极管的制作方法
CN109075221B (zh) * 2016-04-22 2021-06-11 Lg 伊诺特有限公司 发光器件和包括发光器件的显示器
WO2018132070A1 (en) * 2017-01-13 2018-07-19 Massachusetts Institute Of Technology A method of forming a multilayer structure for a pixelated display and a multilayer structure for a pixelated display
JP2019071323A (ja) * 2017-10-06 2019-05-09 鼎元光電科技股▲ふん▼有限公司 基板がない発光ダイオード及びその製造方法
CN109671810A (zh) * 2017-10-16 2019-04-23 鼎元光电科技股份有限公司 无衬底的发光二极管及其制造方法
CN109638132A (zh) * 2018-11-30 2019-04-16 广东德力光电有限公司 倒装红光led芯片结构及其制备方法
CN110767781A (zh) * 2019-11-18 2020-02-07 国网安徽省电力有限公司南陵县供电公司 一种高亮度发光二极管及其制造方法
CN111540817A (zh) * 2020-05-19 2020-08-14 錼创显示科技股份有限公司 微型发光二极管芯片
TWI750664B (zh) 2020-05-19 2021-12-21 錼創顯示科技股份有限公司 微型發光二極體晶片
GB2626471A (en) * 2021-10-05 2024-07-24 Karsten Mfg Corp Systems and methods for predicting ball flight data to create a consistently gapped golf club set

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JPH05315709A (ja) * 1992-05-11 1993-11-26 Omron Corp 半導体発光素子及び当該半導体発光素子を用いた光学装置
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Also Published As

Publication number Publication date
TWI528577B (zh) 2016-04-01
US8679869B2 (en) 2014-03-25
CN101897048B (zh) 2012-09-05
TW201624755A (zh) 2016-07-01
RU2491683C2 (ru) 2013-08-27
US20120187372A1 (en) 2012-07-26
WO2009077974A2 (en) 2009-06-25
JP5496104B2 (ja) 2014-05-21
RU2010129073A (ru) 2012-01-20
KR101677770B1 (ko) 2016-11-18
US20090173956A1 (en) 2009-07-09
CN101897048A (zh) 2010-11-24
KR20150139630A (ko) 2015-12-11
EP2220695A2 (en) 2010-08-25
JP2011507261A (ja) 2011-03-03
WO2009077974A3 (en) 2009-08-13
TW200939546A (en) 2009-09-16
KR20100099286A (ko) 2010-09-10

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Legal Events

Date Code Title Description
B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B25D Requested change of name of applicant approved

Owner name: PHILIPS LUMILEDS LIGHTING COMPANY, LLC (US) ; KONI

B25G Requested change of headquarter approved

Owner name: PHILIPS LUMILEDS LIGHTING COMPANY, LLC (US) ; KONI

B25D Requested change of name of applicant approved

Owner name: KONINKLIJKE PHILIPS N.V. (NL) ; LUMILEDS LLC (US)

B06U Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]
B25A Requested transfer of rights approved

Owner name: LUMILEDS LLC (US) ; LUMILEDS HOLDING B.V. (NL)

B25A Requested transfer of rights approved

Owner name: LUMILEDS HOLDING B.V. (NL)

B06A Notification to applicant to reply to the report for non-patentability or inadequacy of the application [chapter 6.1 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B11D Dismissal acc. art. 38, par 2 of ipl - failure to pay fee after grant in time
B350 Update of information on the portal [chapter 15.35 patent gazette]