JP2011529267A - 窓層及び光指向構造を含む半導体発光装置 - Google Patents
窓層及び光指向構造を含む半導体発光装置 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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Abstract
Description
Claims (15)
- n型領域とp型領域との間に配される発光層を有する半導体構造と、
窓層と、
前記窓層に向かって光を指向する光指向構造と、
前記n型領域に電気的に接続されているn型コンタクト及び前記p型領域に電気的に接続されているp型コンタクトと、
を有する装置であって、前記半導体構造は、前記窓層と前記光指向構造との間に配されており、前記光指向構造は、前記n型領域の表面上に配されており、前記p型コンタクトは前記半導体構造内に形成される開口内に配されている、装置。 - 前記p型領域と前記窓層との間に配された少なくとも1つの透明なボンディング層を更に有する請求項1に記載の装置。
- 前記ボンディング層は、導電性のものであり、前記p型領域に直接的に接続されていると共に、透明な伝導性の酸化物、酸化インジウムスズ、酸化亜鉛及びルテニウム酸化物のうちの1つである、請求項2に記載の装置。
- 前記p型領域と前記窓層との間に配されている全ての層の組み合わせた厚さが、2μm未満である、請求項2に記載の装置。
- 前記p型コンタクトが、前記ボンディング層を露出させるように前記半導体構造を通してエッチングされた開口内の前記ボンディング層上に配されている、請求項2に記載の装置。
- 前記少なくとも1つの透明なボンディング層は、前記p型領域に直接的に接続されている透明な伝導性酸化物であり、当該装置は、前記少なくとも1つの透明なボンディング層と前記窓層との間に配されている付加的な透明なボンディング層を更に有する、請求項2に記載の装置。
- 前記付加的な透明なボンディング層内に配されている波長変換材料を更に有する請求項6に記載の装置。
- 前記付加的な透明なボンディング層と前記少なくとも1つの透明ボンディング層との間の界面が、光を散乱させる、請求項6に記載の装置。
- 前記付加的な透明なボンディング層は、透明な伝導性酸化物、非伝導性ガラス材料、誘電性材料、窒化ケイ素、ITO、ソーダ石灰ガラス、ホウケイ酸ガラス、有機材料、ベンゾシクロブテン、スピンオンガラス及びシリコーンのうちの1つである、請求項6に記載の装置。
- 前記窓層と前記p型領域との間のボンディングは、実質的に有機材料を有していない、請求項1に記載の装置。
- 前記窓層が、光学フィルタ、サファイア及びガラスのうちの1つである、請求項1に記載の装置。
- 前記窓層は、前記発光層によって発される光を吸収して異なる波長の光を発する波長変換材料を有している、請求項1に記載の装置。
- 前記波長変換材料は、セラミック層内に配されている、請求項12に記載の装置。
- 前記光指向構造は、前記n型領域の表面内に形成されるフォトニック結晶と多孔性半導体層とのうちの1つを有している、請求項1に記載の装置。
- 前記発光層がIII族窒化物層である、請求項1に記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/178,902 | 2008-07-24 | ||
US12/178,902 US10147843B2 (en) | 2008-07-24 | 2008-07-24 | Semiconductor light emitting device including a window layer and a light-directing structure |
PCT/IB2009/053065 WO2010010485A1 (en) | 2008-07-24 | 2009-07-15 | Semiconductor light emitting device including a window layer and a light-directing structure |
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JP2015003148A Division JP2015084451A (ja) | 2008-07-24 | 2015-01-09 | 窓層及び光指向構造を含む半導体発光装置 |
JP2015191125A Division JP6074005B2 (ja) | 2008-07-24 | 2015-09-29 | 窓層及び光指向構造を含む半導体発光装置の製造方法 |
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JP2011529267A true JP2011529267A (ja) | 2011-12-01 |
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JP2011519263A Pending JP2011529267A (ja) | 2008-07-24 | 2009-07-15 | 窓層及び光指向構造を含む半導体発光装置 |
JP2015003148A Pending JP2015084451A (ja) | 2008-07-24 | 2015-01-09 | 窓層及び光指向構造を含む半導体発光装置 |
JP2015191125A Active JP6074005B2 (ja) | 2008-07-24 | 2015-09-29 | 窓層及び光指向構造を含む半導体発光装置の製造方法 |
JP2017000636A Pending JP2017059858A (ja) | 2008-07-24 | 2017-01-05 | 窓層及び光指向構造を含む半導体発光装置 |
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JP2015003148A Pending JP2015084451A (ja) | 2008-07-24 | 2015-01-09 | 窓層及び光指向構造を含む半導体発光装置 |
JP2015191125A Active JP6074005B2 (ja) | 2008-07-24 | 2015-09-29 | 窓層及び光指向構造を含む半導体発光装置の製造方法 |
JP2017000636A Pending JP2017059858A (ja) | 2008-07-24 | 2017-01-05 | 窓層及び光指向構造を含む半導体発光装置 |
Country Status (7)
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US (2) | US10147843B2 (ja) |
EP (1) | EP2308107B1 (ja) |
JP (4) | JP2011529267A (ja) |
KR (1) | KR20110031999A (ja) |
CN (2) | CN105870271A (ja) |
TW (1) | TWI505501B (ja) |
WO (1) | WO2010010485A1 (ja) |
Cited By (5)
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JP2016513882A (ja) * | 2013-03-13 | 2016-05-16 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 多孔質の反射性コンタクトを作製する方法及び装置 |
JP2016524344A (ja) * | 2013-07-08 | 2016-08-12 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 波長変換式半導体発光デバイス |
KR101733043B1 (ko) | 2015-09-24 | 2017-05-08 | 안상정 | 반도체 발광소자 및 이의 제조방법 |
JP2017512380A (ja) * | 2014-02-18 | 2017-05-18 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 半導体構成素子を製造する方法、及び、半導体構成素子 |
JP2018500773A (ja) * | 2014-12-30 | 2018-01-11 | 深▲セン▼市華星光電技術有限公司 | 発光装置及び発光装置実装体 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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US11024611B1 (en) * | 2017-06-09 | 2021-06-01 | Goertek, Inc. | Micro-LED array transfer method, manufacturing method and display device |
JP2019102715A (ja) * | 2017-12-06 | 2019-06-24 | スタンレー電気株式会社 | 半導体発光装置およびその製造方法 |
US11404400B2 (en) | 2018-01-24 | 2022-08-02 | Apple Inc. | Micro LED based display panel |
DE112018007310T5 (de) | 2018-03-21 | 2020-12-17 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronische vorrichtung, die eine leuchtstoffplatte aufweist und verfahren zur herstellung der optoelektronischen vorrichtung |
CN108550666A (zh) * | 2018-05-02 | 2018-09-18 | 天津三安光电有限公司 | 倒装四元系发光二极管外延结构、倒装四元系发光二极管及其生长方法 |
US10804440B2 (en) | 2018-12-21 | 2020-10-13 | Lumileds Holding B.V. | Light extraction through adhesive layer between LED and converter |
CN111446337B (zh) | 2019-01-16 | 2021-08-10 | 隆达电子股份有限公司 | 发光二极管结构 |
GB202213149D0 (en) * | 2022-09-08 | 2022-10-26 | Poro Tech Ltd | Method of separating a semiconductor device from a substrate |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10341035A (ja) * | 1997-06-03 | 1998-12-22 | Hewlett Packard Co <Hp> | 半導体発光素子および半導体発光素子の製造方法 |
JP2004319685A (ja) * | 2003-04-15 | 2004-11-11 | Toshiba Corp | 半導体発光素子および半導体発光装置 |
JP2005072585A (ja) * | 2003-08-20 | 2005-03-17 | Shogen Koden Kofun Yugenkoshi | 窒化物系高効率発光素子 |
JP2005252253A (ja) * | 2004-03-01 | 2005-09-15 | Shogen Koden Kofun Yugenkoshi | 小型反射器を有するフリップチップ発光装置 |
JP2006147787A (ja) * | 2004-11-18 | 2006-06-08 | Sony Corp | 発光素子及びその製造方法 |
JP2006210916A (ja) * | 2005-01-25 | 2006-08-10 | Shogen Koden Kofun Yugenkoshi | 発光装置 |
JP2007150331A (ja) * | 2005-11-29 | 2007-06-14 | Philips Lumileds Lightng Co Llc | 発光デバイスのための発光セラミック素子 |
JP2007214225A (ja) * | 2006-02-08 | 2007-08-23 | Showa Denko Kk | 発光ダイオード及びその製造方法 |
JP2007273975A (ja) * | 2006-03-10 | 2007-10-18 | Matsushita Electric Works Ltd | 発光素子 |
WO2007136065A1 (ja) * | 2006-05-23 | 2007-11-29 | Alps Electric Co., Ltd. | 半導体発光素子の製造方法 |
JP2007324608A (ja) * | 2006-05-31 | 2007-12-13 | Philips Lumileds Lightng Co Llc | 波長変換部材の変更による色管理 |
JP2007335879A (ja) * | 2006-06-09 | 2007-12-27 | Philips Lumileds Lightng Co Llc | 多孔質層を含む半導体発光デバイス |
JP2008159708A (ja) * | 2006-12-21 | 2008-07-10 | Matsushita Electric Works Ltd | 発光装置 |
JP4160597B2 (ja) * | 2004-01-07 | 2008-10-01 | 浜松ホトニクス株式会社 | 半導体発光素子及びその製造方法 |
Family Cites Families (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5376580A (en) | 1993-03-19 | 1994-12-27 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
JP2950106B2 (ja) | 1993-07-14 | 1999-09-20 | 松下電器産業株式会社 | 光素子実装体の製造方法 |
US6784463B2 (en) | 1997-06-03 | 2004-08-31 | Lumileds Lighting U.S., Llc | III-Phospide and III-Arsenide flip chip light-emitting devices |
JP2001345484A (ja) | 2000-06-01 | 2001-12-14 | Seiwa Electric Mfg Co Ltd | 発光ダイオードチップ及び発光ダイオードランプ |
US20020017652A1 (en) | 2000-08-08 | 2002-02-14 | Stefan Illek | Semiconductor chip for optoelectronics |
TW474034B (en) | 2000-11-07 | 2002-01-21 | United Epitaxy Co Ltd | LED and the manufacturing method thereof |
JP4639520B2 (ja) | 2001-04-27 | 2011-02-23 | パナソニック株式会社 | 窒化物半導体チップの製造方法 |
RU2207663C2 (ru) | 2001-07-17 | 2003-06-27 | Ооо Нпц Оэп "Оптэл" | Светодиод |
JP3874701B2 (ja) | 2002-06-26 | 2007-01-31 | 株式会社東芝 | 半導体発光素子及び半導体発光装置 |
US7041529B2 (en) | 2002-10-23 | 2006-05-09 | Shin-Etsu Handotai Co., Ltd. | Light-emitting device and method of fabricating the same |
JP4174581B2 (ja) | 2002-10-23 | 2008-11-05 | 信越半導体株式会社 | 発光素子の製造方法 |
US20040211972A1 (en) | 2003-04-22 | 2004-10-28 | Gelcore, Llc | Flip-chip light emitting diode |
US7268370B2 (en) * | 2003-06-05 | 2007-09-11 | Matsushita Electric Industrial Co., Ltd. | Phosphor, semiconductor light emitting device, and fabrication method thereof |
US7915085B2 (en) | 2003-09-18 | 2011-03-29 | Cree, Inc. | Molded chip fabrication method |
US7012279B2 (en) * | 2003-10-21 | 2006-03-14 | Lumileds Lighting U.S., Llc | Photonic crystal light emitting device |
US7119372B2 (en) | 2003-10-24 | 2006-10-10 | Gelcore, Llc | Flip-chip light emitting diode |
JP4357311B2 (ja) | 2004-02-04 | 2009-11-04 | シチズン電子株式会社 | 発光ダイオードチップ |
WO2005093863A1 (en) | 2004-03-29 | 2005-10-06 | Showa Denko K.K | Compound semiconductor light-emitting device and production method thereof |
TWM255518U (en) | 2004-04-23 | 2005-01-11 | Super Nova Optoelectronics Cor | Vertical electrode structure of Gallium Nitride based LED |
JP4386789B2 (ja) | 2004-05-12 | 2009-12-16 | ローム株式会社 | 発光ダイオード素子の製造方法 |
US20070267646A1 (en) * | 2004-06-03 | 2007-11-22 | Philips Lumileds Lighting Company, Llc | Light Emitting Device Including a Photonic Crystal and a Luminescent Ceramic |
US7361938B2 (en) * | 2004-06-03 | 2008-04-22 | Philips Lumileds Lighting Company Llc | Luminescent ceramic for a light emitting device |
US7560294B2 (en) | 2004-06-07 | 2009-07-14 | Toyoda Gosei Co., Ltd. | Light emitting element and method of making same |
JP4857596B2 (ja) | 2004-06-24 | 2012-01-18 | 豊田合成株式会社 | 発光素子の製造方法 |
US7553683B2 (en) * | 2004-06-09 | 2009-06-30 | Philips Lumiled Lighting Co., Llc | Method of forming pre-fabricated wavelength converting elements for semiconductor light emitting devices |
TWM277111U (en) | 2004-06-18 | 2005-10-01 | Super Nova Optoelectronics Cor | Vertical electrode structure for white-light LED |
JP4726783B2 (ja) | 2004-06-21 | 2011-07-20 | 出光興産株式会社 | バックシャーシ一体型反射器、バックライト装置及び液晶表示装置 |
US20060054919A1 (en) | 2004-08-27 | 2006-03-16 | Kyocera Corporation | Light-emitting element, method for manufacturing the same and lighting equipment using the same |
JP4812369B2 (ja) | 2004-08-27 | 2011-11-09 | 京セラ株式会社 | 発光素子の製造方法 |
JP4667803B2 (ja) | 2004-09-14 | 2011-04-13 | 日亜化学工業株式会社 | 発光装置 |
DE102004060358A1 (de) | 2004-09-30 | 2006-04-13 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen von Lumineszenzdiodenchips und Lumineszenzdiodenchip |
US7256483B2 (en) * | 2004-10-28 | 2007-08-14 | Philips Lumileds Lighting Company, Llc | Package-integrated thin film LED |
US7419839B2 (en) * | 2004-11-12 | 2008-09-02 | Philips Lumileds Lighting Company, Llc | Bonding an optical element to a light emitting device |
JP4901117B2 (ja) | 2005-03-04 | 2012-03-21 | 株式会社東芝 | 半導体発光素子及び半導体発光素子の製造方法 |
KR100606551B1 (ko) | 2005-07-05 | 2006-08-01 | 엘지전자 주식회사 | 발광소자 제조방법 |
TWI253770B (en) | 2005-07-11 | 2006-04-21 | Univ Nat Central | Light emitting diode and manufacturing method thereof |
US7609444B2 (en) * | 2005-10-21 | 2009-10-27 | Hewlett-Packard Development Company, L.P. | Projection partitioning and aligning |
KR100723247B1 (ko) | 2006-01-10 | 2007-05-29 | 삼성전기주식회사 | 칩코팅형 led 패키지 및 그 제조방법 |
US8269236B2 (en) * | 2006-02-08 | 2012-09-18 | Showa Denko K.K. | Light-emitting diode and fabrication method thereof |
JP2007214276A (ja) * | 2006-02-08 | 2007-08-23 | Mitsubishi Chemicals Corp | 発光素子 |
KR101030659B1 (ko) * | 2006-03-10 | 2011-04-20 | 파나소닉 전공 주식회사 | 발광 소자 |
JP4889361B2 (ja) | 2006-04-20 | 2012-03-07 | 昭和電工株式会社 | 半導体発光素子の製造方法 |
CN100452327C (zh) | 2006-05-19 | 2009-01-14 | 友达光电股份有限公司 | 薄膜晶体管的制作方法 |
US7829905B2 (en) * | 2006-09-07 | 2010-11-09 | Hong Kong Applied Science And Technology Research Institute Co., Ltd. | Semiconductor light emitting device |
US7800122B2 (en) * | 2006-09-07 | 2010-09-21 | Hong Kong Applied Science And Technology Research Institute Co., Ltd. | Light emitting diode device, and manufacture and use thereof |
JP4353232B2 (ja) | 2006-10-24 | 2009-10-28 | ソニー株式会社 | 発光素子 |
KR101271225B1 (ko) | 2006-10-31 | 2013-06-03 | 삼성디스플레이 주식회사 | 발광 다이오드 칩 및 발광 다이오드 광원 모듈의 제조 방법 |
US9178121B2 (en) | 2006-12-15 | 2015-11-03 | Cree, Inc. | Reflective mounting substrates for light emitting diodes |
TW200828624A (en) * | 2006-12-27 | 2008-07-01 | Epistar Corp | Light-emitting diode and method for manufacturing the same |
TW200830577A (en) | 2007-01-05 | 2008-07-16 | Uni Light Touchtek Corp | Method for manufacturing light emitting diode devices |
EP2109651B1 (en) | 2007-02-07 | 2011-09-28 | Philips Intellectual Property & Standards GmbH | Illumination system comprising composite monolithic ceramic luminescence converter |
US7601989B2 (en) | 2007-03-27 | 2009-10-13 | Philips Lumileds Lighting Company, Llc | LED with porous diffusing reflector |
JP5158472B2 (ja) | 2007-05-24 | 2013-03-06 | スタンレー電気株式会社 | 半導体発光装置 |
US9634191B2 (en) * | 2007-11-14 | 2017-04-25 | Cree, Inc. | Wire bond free wafer level LED |
US10147843B2 (en) | 2008-07-24 | 2018-12-04 | Lumileds Llc | Semiconductor light emitting device including a window layer and a light-directing structure |
US20110062469A1 (en) | 2009-09-17 | 2011-03-17 | Koninklijke Philips Electronics N.V. | Molded lens incorporating a window element |
-
2008
- 2008-07-24 US US12/178,902 patent/US10147843B2/en active Active
-
2009
- 2009-07-15 CN CN201610396252.XA patent/CN105870271A/zh active Pending
- 2009-07-15 JP JP2011519263A patent/JP2011529267A/ja active Pending
- 2009-07-15 WO PCT/IB2009/053065 patent/WO2010010485A1/en active Application Filing
- 2009-07-15 CN CN200980128853.0A patent/CN102106004B/zh active Active
- 2009-07-15 EP EP09786606.5A patent/EP2308107B1/en active Active
- 2009-07-15 KR KR1020117004185A patent/KR20110031999A/ko not_active Application Discontinuation
- 2009-07-21 TW TW098124585A patent/TWI505501B/zh active
-
2015
- 2015-01-09 JP JP2015003148A patent/JP2015084451A/ja active Pending
- 2015-09-29 JP JP2015191125A patent/JP6074005B2/ja active Active
-
2017
- 2017-01-05 JP JP2017000636A patent/JP2017059858A/ja active Pending
-
2018
- 2018-12-03 US US16/208,045 patent/US20190189838A1/en not_active Abandoned
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10341035A (ja) * | 1997-06-03 | 1998-12-22 | Hewlett Packard Co <Hp> | 半導体発光素子および半導体発光素子の製造方法 |
JP2004319685A (ja) * | 2003-04-15 | 2004-11-11 | Toshiba Corp | 半導体発光素子および半導体発光装置 |
JP2005072585A (ja) * | 2003-08-20 | 2005-03-17 | Shogen Koden Kofun Yugenkoshi | 窒化物系高効率発光素子 |
JP4160597B2 (ja) * | 2004-01-07 | 2008-10-01 | 浜松ホトニクス株式会社 | 半導体発光素子及びその製造方法 |
JP2005252253A (ja) * | 2004-03-01 | 2005-09-15 | Shogen Koden Kofun Yugenkoshi | 小型反射器を有するフリップチップ発光装置 |
JP2006147787A (ja) * | 2004-11-18 | 2006-06-08 | Sony Corp | 発光素子及びその製造方法 |
JP2006210916A (ja) * | 2005-01-25 | 2006-08-10 | Shogen Koden Kofun Yugenkoshi | 発光装置 |
JP2007150331A (ja) * | 2005-11-29 | 2007-06-14 | Philips Lumileds Lightng Co Llc | 発光デバイスのための発光セラミック素子 |
JP2007214225A (ja) * | 2006-02-08 | 2007-08-23 | Showa Denko Kk | 発光ダイオード及びその製造方法 |
JP2007273975A (ja) * | 2006-03-10 | 2007-10-18 | Matsushita Electric Works Ltd | 発光素子 |
WO2007136065A1 (ja) * | 2006-05-23 | 2007-11-29 | Alps Electric Co., Ltd. | 半導体発光素子の製造方法 |
JP2007324608A (ja) * | 2006-05-31 | 2007-12-13 | Philips Lumileds Lightng Co Llc | 波長変換部材の変更による色管理 |
JP2007335879A (ja) * | 2006-06-09 | 2007-12-27 | Philips Lumileds Lightng Co Llc | 多孔質層を含む半導体発光デバイス |
JP2008159708A (ja) * | 2006-12-21 | 2008-07-10 | Matsushita Electric Works Ltd | 発光装置 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016513882A (ja) * | 2013-03-13 | 2016-05-16 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 多孔質の反射性コンタクトを作製する方法及び装置 |
JP2016524344A (ja) * | 2013-07-08 | 2016-08-12 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 波長変換式半導体発光デバイス |
US20180033923A1 (en) * | 2013-07-08 | 2018-02-01 | Lumileds Llc. | Wavelength converted semiconductor light emitting device |
US10270013B2 (en) * | 2013-07-08 | 2019-04-23 | Lumileds Llc | Wavelength converted semiconductor light emitting device |
US10790417B2 (en) | 2013-07-08 | 2020-09-29 | Lumileds Llc | Wavelength converted semiconductor light emitting device |
JP2017512380A (ja) * | 2014-02-18 | 2017-05-18 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 半導体構成素子を製造する方法、及び、半導体構成素子 |
JP2018500773A (ja) * | 2014-12-30 | 2018-01-11 | 深▲セン▼市華星光電技術有限公司 | 発光装置及び発光装置実装体 |
KR101733043B1 (ko) | 2015-09-24 | 2017-05-08 | 안상정 | 반도체 발광소자 및 이의 제조방법 |
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JP2017059858A (ja) | 2017-03-23 |
EP2308107A1 (en) | 2011-04-13 |
TWI505501B (zh) | 2015-10-21 |
US10147843B2 (en) | 2018-12-04 |
TW201027795A (en) | 2010-07-16 |
CN105870271A (zh) | 2016-08-17 |
JP6074005B2 (ja) | 2017-02-01 |
CN102106004A (zh) | 2011-06-22 |
WO2010010485A1 (en) | 2010-01-28 |
JP2015084451A (ja) | 2015-04-30 |
EP2308107B1 (en) | 2020-03-25 |
US20190189838A1 (en) | 2019-06-20 |
KR20110031999A (ko) | 2011-03-29 |
US20100019260A1 (en) | 2010-01-28 |
JP2016021592A (ja) | 2016-02-04 |
CN102106004B (zh) | 2016-07-06 |
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