GB202213149D0 - Method of separating a semiconductor device from a substrate - Google Patents

Method of separating a semiconductor device from a substrate

Info

Publication number
GB202213149D0
GB202213149D0 GBGB2213149.4A GB202213149A GB202213149D0 GB 202213149 D0 GB202213149 D0 GB 202213149D0 GB 202213149 A GB202213149 A GB 202213149A GB 202213149 D0 GB202213149 D0 GB 202213149D0
Authority
GB
United Kingdom
Prior art keywords
separating
substrate
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB2213149.4A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Poro Technologies Ltd
Original Assignee
Poro Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Poro Technologies Ltd filed Critical Poro Technologies Ltd
Priority to GBGB2213149.4A priority Critical patent/GB202213149D0/en
Publication of GB202213149D0 publication Critical patent/GB202213149D0/en
Priority to PCT/GB2023/052330 priority patent/WO2024052695A1/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • H01L21/7813—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate leaving a reusable substrate, e.g. epitaxial lift off
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Junction Field-Effect Transistors (AREA)
GBGB2213149.4A 2022-09-08 2022-09-08 Method of separating a semiconductor device from a substrate Ceased GB202213149D0 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GBGB2213149.4A GB202213149D0 (en) 2022-09-08 2022-09-08 Method of separating a semiconductor device from a substrate
PCT/GB2023/052330 WO2024052695A1 (en) 2022-09-08 2023-09-08 Method of separating a semiconductor device from a substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB2213149.4A GB202213149D0 (en) 2022-09-08 2022-09-08 Method of separating a semiconductor device from a substrate

Publications (1)

Publication Number Publication Date
GB202213149D0 true GB202213149D0 (en) 2022-10-26

Family

ID=83945299

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB2213149.4A Ceased GB202213149D0 (en) 2022-09-08 2022-09-08 Method of separating a semiconductor device from a substrate

Country Status (2)

Country Link
GB (1) GB202213149D0 (en)
WO (1) WO2024052695A1 (en)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG54593A1 (en) * 1996-11-15 1998-11-16 Canon Kk Method of manufacturing semiconductor article
US10147843B2 (en) * 2008-07-24 2018-12-04 Lumileds Llc Semiconductor light emitting device including a window layer and a light-directing structure
US9214353B2 (en) * 2012-02-26 2015-12-15 Solexel, Inc. Systems and methods for laser splitting and device layer transfer
KR101701041B1 (en) * 2015-05-27 2017-02-01 한양대학교 산학협력단 Light emitting diode formed on silicon polyhedron and method for fabricating the same
KR20230152152A (en) 2017-09-27 2023-11-02 캠브리지 엔터프라이즈 리미티드 Method for porosifying a material and semiconductor structure
GB201801337D0 (en) 2018-01-26 2018-03-14 Cambridge Entpr Ltd Method for etching a semiconductor structure
CN115244717A (en) 2020-01-22 2022-10-25 波拉科技有限公司 Semiconductor structure and method of manufacture
TW202221938A (en) 2020-08-04 2022-06-01 英商普羅科技有限公司 Led and method of manufacture

Also Published As

Publication number Publication date
WO2024052695A1 (en) 2024-03-14

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)