JP6366337B2 - Led発光装置及びその製造方法 - Google Patents
Led発光装置及びその製造方法 Download PDFInfo
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- JP6366337B2 JP6366337B2 JP2014089301A JP2014089301A JP6366337B2 JP 6366337 B2 JP6366337 B2 JP 6366337B2 JP 2014089301 A JP2014089301 A JP 2014089301A JP 2014089301 A JP2014089301 A JP 2014089301A JP 6366337 B2 JP6366337 B2 JP 6366337B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000010410 layer Substances 0.000 claims description 61
- 229910052782 aluminium Inorganic materials 0.000 claims description 43
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 34
- 230000001965 increasing effect Effects 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 20
- 229920005989 resin Polymers 0.000 claims description 15
- 239000011347 resin Substances 0.000 claims description 15
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 14
- 239000012790 adhesive layer Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 7
- 229920002050 silicone resin Polymers 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 230000000873 masking effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005488 sandblasting Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 239000002585 base Substances 0.000 description 3
- 238000005422 blasting Methods 0.000 description 3
- 230000032798 delamination Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000000053 physical method Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V21/00—Supporting, suspending, or attaching arrangements for lighting devices; Hand grips
- F21V21/08—Devices for easy attachment to any desired place, e.g. clip, clamp, magnet
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/85—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems characterised by the material
- F21V29/89—Metals
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48095—Kinked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Description
10 アルミ基板
11、61 接着層
12、62 反射層
13、63 増反射層
14 接着シート
18 プリント配線基板
19 ダム材
20 LED素子
30 蛍光樹脂
40 ガイド穴
45 素子実装領域
46 粗面化領域
Claims (4)
- アルミ基板と、
前記アルミ基板上に設けられた接着層、反射層、及び、増反射層と、
前記増反射層上に接着されたLED素子と、
前記接着層、反射層、及び、増反射層が設けられた領域以外の領域で、前記アルミ基板の表面に形成された粗面化領域と、
前記粗面化領域に接着されたプリント配線基板と、
前記プリント配線基板と前記LED素子とを接続するワイヤと、
前記LED素子の周囲に配置されたダム材と、
前記ダム材の内側領域に配置された蛍光体樹脂と、
を有することを特徴とするLED照明装置。 - 前記増反射層は、SiO2及びTiO2層を少なくとも1層ずつ含む、請求項1に記載のLED照明装置。
- 接着層、反射層、及び、増反射層が設けられたアルミ基板上にマスクを形成し、
前記マスクが形成された領域以外から前記接着層、反射層、及び、増反射層を除去しつつ、前記アルミ基板の表面に粗面化領域を形成し、
前記粗面化領域にプリント配線基板を接着し、
前記マスクが除去された前記増反射層上にLED素子を接着し、
前記LED素子と前記プリント配線基板とをワイヤで接続し、
前記LED素子の周囲に配置されたダム材の内側に蛍光体樹脂を配置する、
工程を有することを特徴とするLED照明装置の製造方法。 - 前記増反射層は、SiO2及びTiO2層を少なくとも1層ずつ含む、請求項3に記載のLED照明装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014089301A JP6366337B2 (ja) | 2014-04-23 | 2014-04-23 | Led発光装置及びその製造方法 |
US14/686,909 US9620684B2 (en) | 2014-04-23 | 2015-04-15 | LED lighting apparatus and method for manufacturing the same |
CN201520253746.3U CN204946920U (zh) | 2014-04-23 | 2015-04-23 | Led发光设备 |
US15/448,041 US9859482B2 (en) | 2014-04-23 | 2017-03-02 | LED lighting apparatus and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014089301A JP6366337B2 (ja) | 2014-04-23 | 2014-04-23 | Led発光装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015207743A JP2015207743A (ja) | 2015-11-19 |
JP6366337B2 true JP6366337B2 (ja) | 2018-08-01 |
Family
ID=54335568
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014089301A Active JP6366337B2 (ja) | 2014-04-23 | 2014-04-23 | Led発光装置及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US9620684B2 (ja) |
JP (1) | JP6366337B2 (ja) |
CN (1) | CN204946920U (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2927971A4 (en) * | 2012-11-27 | 2015-12-02 | Citizen Electronics | MOUNTING SUBSTRATE AND LIGHT EMITTING APPARATUS USING MOUNTING SUBSTRATE |
DE102013208223B4 (de) * | 2013-05-06 | 2021-09-16 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen eines optoelektronischen Bauelements |
US10516085B2 (en) * | 2014-08-21 | 2019-12-24 | Luminus, Inc. | Devices and methods including an LED and reflective die attach material |
DE102016103819A1 (de) * | 2016-03-03 | 2017-09-07 | Heraeus Deutschland GmbH & Co. KG | Anschlussträger, optoelektronisches Bauteil und Verfahren zur Herstellung eines Anschlussträgers oder eines optoelektronischen Bauteils |
DE102017115798A1 (de) * | 2017-07-13 | 2019-01-17 | Alanod Gmbh & Co. Kg | Reflektierendes Verbundmaterial, insbesondere für oberflächenmontierte Bauelemente (SMD), und lichtemittierende Vorrichtung mit einem derartigen Verbundmaterial |
JP7027129B2 (ja) * | 2017-11-09 | 2022-03-01 | シチズン電子株式会社 | 発光装置 |
DE102019123886A1 (de) * | 2019-09-05 | 2021-03-11 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4877571B2 (ja) | 2005-10-11 | 2012-02-15 | 日立化成工業株式会社 | 発光素子搭載用基板 |
JP4783647B2 (ja) * | 2006-02-27 | 2011-09-28 | パナソニック株式会社 | 半導体装置用パッケージ部品を用いた半導体装置 |
JP5179766B2 (ja) * | 2007-03-08 | 2013-04-10 | スタンレー電気株式会社 | 半導体発光装置およびその製造方法 |
KR101077264B1 (ko) * | 2009-02-17 | 2011-10-27 | (주)포인트엔지니어링 | 광소자용 기판, 이를 갖는 광소자 패키지 및 이의 제조 방법 |
JP2012212823A (ja) * | 2011-03-31 | 2012-11-01 | Hitachi Chem Co Ltd | Led搭載用基板の製造方法及びled搭載用基板 |
JP2013183148A (ja) * | 2012-03-05 | 2013-09-12 | Hitachi Cable Ltd | 半導体発光素子搭載用基板、半導体発光素子搭載用基板の製造方法及び半導体発光素子搭載用基板を用いた半導体発光装置 |
US20150091029A1 (en) * | 2012-04-06 | 2015-04-02 | Citizen Electronics Co., Ltd. | Led light emitting apparatus |
DE102013106858A1 (de) * | 2012-07-19 | 2014-01-23 | Samsung Electro-Mechanics Co., Ltd. | Substrat für ein LED-Modul und Verfahren zu dessen Herstellung |
-
2014
- 2014-04-23 JP JP2014089301A patent/JP6366337B2/ja active Active
-
2015
- 2015-04-15 US US14/686,909 patent/US9620684B2/en active Active
- 2015-04-23 CN CN201520253746.3U patent/CN204946920U/zh not_active Expired - Fee Related
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2017
- 2017-03-02 US US15/448,041 patent/US9859482B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN204946920U (zh) | 2016-01-06 |
JP2015207743A (ja) | 2015-11-19 |
US20170179357A1 (en) | 2017-06-22 |
US20150311403A1 (en) | 2015-10-29 |
US9859482B2 (en) | 2018-01-02 |
US9620684B2 (en) | 2017-04-11 |
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