CN204946920U - Led发光设备 - Google Patents

Led发光设备 Download PDF

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CN204946920U
CN204946920U CN201520253746.3U CN201520253746U CN204946920U CN 204946920 U CN204946920 U CN 204946920U CN 201520253746 U CN201520253746 U CN 201520253746U CN 204946920 U CN204946920 U CN 204946920U
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led luminaire
led
circuit board
aluminium base
printed circuit
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加藤达也
今井贞人
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Citizen Electronics Co Ltd
Citizen Watch Co Ltd
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Citizen Watch Co Ltd
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Abstract

提供能够改善铝基板与印刷布线基板之间的粘结强度的LED发光设备和用于制造LED发光设备的方法。一种LED发光设备以及一种用于制造LED发光设备的方法,该LED发光设备包括铝基板、形成在铝基板上的多个反射率增强层、粘结在所述多个反射率增强层上的LED装置、粘结在铝基板上的除了多个反射率增强层被形成的区域之外的区域上的印刷布线基板、用于印刷布线基板与LED装置之间的连接的导线、被形成以包围所述LED装置的框架构件、以及被沉积在框架构件内部的区域之上的荧光体树脂。

Description

LED发光设备
相关申请的交叉引用
这个申请是新的美国专利申请,该专利申请要求2014年4月23日提交的JP2014-89301的权益,JP2014-89301的全部内容通过引用被结合于此。
技术领域
本发明涉及LED发光设备以及用于制造LED发光设备的方法,更具体地,涉及通过将LED装置安装到铝基板上来构造的LED发光设备以及用于制造这样的LED发光设备的方法。
背景技术
近年来,作为半导体装置的LED装置由于它们的长寿命和优异的驱动特性以及它们的紧凑的尺寸、良好的发光效率以及鲜明的发光色,已在照明和其它应用中得到广泛使用。
为了构造用于照明目的的发光设备,已知的是,对铝表面应用诸如汽相沉积或者阳极电镀处理的镜面处理,然后在其上安装LED装置,以使得从LED装置发出的光能够被高效地反射(例如,参考第2007-109701号日本未经审查的专利公报)。
实用新型内容
然而,存在的问题是,当布线基板、电极等等通过借助于粘合片等等被粘结到镜面表面而被连接到LED装置时,因为通过镜面处理形成的层之间的粘合力不够,所以布线基板等等可能在通过镜面处理形成的层处分层。
还存在的问题是,当铝基板由于室温的改变而受到热膨胀和热收缩时,在通过镜面处理形成的层之间可能发生中间层分层,并且同样在这种情况下,布线基板等等可能变为分层。
相应地,本发明的一个目的是提供能够解决上述问题的LED发光设备以及用于制造LED发光设备的方法。
本发明的另一个目的是提供能够改善铝基板和印刷布线基板之间的粘合强度的LED发光设备以及用于制造LED发光设备的方法。
一种LED发光设备包括:铝基板;多个反射率增强层,多个反射率增强层被形成在铝基板上;LED装置,LED装置被粘结在多个反射率增强层上;印刷布线基板,印刷布线基板被粘结在铝基板上的除了多个反射率增强的层被形成的区域之外的区域上;导线,导线用于印刷布线基板与LED装置之间的连接;框架构件,框架构件被形成以包围LED装置;以及荧光体树脂,荧光体树脂被沉积在框架构件内部的区域之上。
较佳地,在LED发光设备中,印刷布线基板被粘结在粗糙表面区域上,粗糙表面区域被形成在多个反射率增强层被形成的区域以外。
较佳地,在LED发光设备中,多个反射率增强层包括粘合层、反射层、以及增强的反射率层。
一种用于制造LED发光设备的方法,包括以下步骤:在铝基板上形成掩模,多个反射率增强层被形成在铝基板上;通过去除除了掩盖膜被形成处之外的其它各处的多个反射率增强层来在铝基板上形成粗糙表面区域;在粗糙表面区域上粘结印刷布线基板;在已经从其上去除了所述掩模的多个反射率增强层上粘结LED装置;通过导线将LED装置连接至印刷布线基板;以及在框架构件内部的区域之上沉积荧光体树脂,框架构件被形成以包围LED装置。
根据上述LED发光设备以及用于制造LED发光设备的方法,印刷布线基板没有变成与铝基板分层,因此,能够提供具有高可靠性的LED发光设备。
附图说明
结合附图,从接下来的描述中,当前的发光设备的其它特征和优势将显而易见,其中:
图1A是根据本发明的LED发光设备1的俯视图。
图1B是沿着图1A中的线AA'获得的横截面视图。
图2A是用于说明LED发光设备1的制造处理的图(部分1)。
图2B是用于说明LED发光设备1的制造处理的图(部分1)。
图2C是用于说明LED发光设备1的制造处理的图(部分1)。
图2D是用于说明LED发光设备1的制造处理的图(部分1)。
图2E是用于说明LED发光设备1的制造处理的图(部分1)。
图3A是用于说明LED发光设备1的制造处理的图(部分2)。
图3B是用于说明LED发光设备1的制造处理的图(部分2)。
图3C是用于说明LED发光设备1的制造处理的图(部分2)。
图3D是用于说明LED发光设备1的制造处理的图(部分2)。
图4A是用于说明另一个LED发光设备2的制造方法的图。
图4B是用于说明另一个LED发光设备2的制造方法的图。
图4C是用于说明另一个LED发光设备2的制造方法的图。
图4D是用于说明另一个LED发光设备2的制造方法的图。
具体实施方式
以下将参考附图描述根据本发明的LED发光设备以及用于制造LED发光设备的方法。然而,应当注意,本发明的技术范围不局限于在此描述的任何特定的实施例,而是延伸至在所附权利要求书及其等价物中所描述的发明。
图1A是根据本发明的LED发光设备1的俯视图,以及图1B是沿着图1A中的线AA'获得的横截面视图。
LED发光设备1包括铝基板10、印刷布线基板18、框架构件19、LED装置20、以及荧光体树脂30,并且借助于被设置在边缘部分的导向孔40被安装到照明灯具。
在由通过沉积硅树脂被形成为基本上圆形的框架构件19所包围的装置安装区域45中,在铝基板10上,一个在另一个顶部上,形成有粘合层11、反射层12、以及增强的反射率层,用于增强的反射。
粘合层11是阳极化铝层。反射层12是反射率为90%或者更高的Ag或者Al沉积层。增强的反射率层13由至少一个SiO2层和具有比SiO2更大的折射率的至少一个TiO2层的层叠形成。可以使用Al2O3层和具有比Al2O3更大的折射率的TiO2层的层叠代替SiO2和TiO2层的层叠。为了增强反射率,设置增强的反射率层13。
在装置安装区域45中,在形成在印刷布线基板18上的电极16-1和16-2之间,通过金导线平行地连接被布置成每组12个LED装置串联连接的3组的LED装置20。每个LED装置20通过芯片粘结材料21被直接粘结到铝基板10的反射率增强表面。当规定的电压被施加到形成在印刷布线基板18上的电极16a和16b之间时,LED装置20发出光。
用于保护LED装置20的荧光体树脂30被形成在框架构件19的内部,以包围LED装置20。透明的环氧树脂或者硅树脂被用于形成荧光体树脂30。荧光体树脂30包含分散于树脂的荧光体。因为荧光体吸收从LED装置20发出的一部分蓝光并通过波长转换产生黄光,所以LED发光设备1发出具有与蓝光混合的黄光的白光。荧光体树脂30也可以包含用于均匀地漫射从LED装置20发出的光的漫射材料。
没有被处理用于增强的反射而是通过使铝表面粗糙而被处理的粗糙表面区域46被形成在铝基板10上,以包围装置安装区域45。印刷布线基板18借助于粘合片14被粘结在粗糙表面区域46上。除了电极16-1、16-2等等以外,印刷布线基板18包括基座15和保护层17。
在利用多个层来被处理用于增强反射的装置安装区域45中,层之间的粘合力不足;因此,如果印刷布线基板18被粘结在这个区域上,那么由于中间层分层,印刷布线基板18变得与铝基板10分层。此外,当铝基板由于室温的改变而受到热膨胀或者收缩时,也可能发生中间层分层,导致印刷布线基板18与铝基板10分层。相反,在LED发光设备1中,因为印刷布线基板18不是被粘结在被处理用于增强反射的装置安装区域45上,而是通过使用粘合片14被粘结在粗糙表面区域46上,所以印刷布线基板18能够被牢牢地被粘结到铝基板10。此外,当例如安装LED发光设备1到照明灯具时,因为印刷布线基板18由于被给予LED发光设备1的热历史而没有变得与铝基板10分层,所以可以制造具有高可靠性的封装。
图2A-2E和3A-3D是用于说明LED发光设备1的制造处理的图。
首先,如图2A所示,反射率增强的铝板10’被制备。在这个实例中,由Anorad制造的Miro20.7t被用作反射率增强的铝板10’。反射率增强的铝板10’具有多层结构,其中,阳极化铝的粘合层11、Al沉积膜的反射层12、以及由SiO2和TiO2层(至少各一层)的层叠所形成的增强的反射率层13一个在另一个顶部地被沉积在铝基板10上。如果反射层12由Ag沉积膜形成,那么将提高反射率,但是由于其容易受到锈蚀,所以这里使用Al沉积膜。
接下来,如图2B所示,通过使用钻孔机,导向孔40被开通穿过铝板10’。
接下来,如图2C所示,通过使用层压机,感光性干膜50被层压到铝板10'的表面。在这个实例中,由日立化成(HitachiChemical)制造的碱性显影干膜“PHOTEC(注册商标)H-7025”被用作感光性干膜50。
接下来,如图2D所示,用于掩盖装置安装区域45的负片51通过真空被层压在感光性干膜50上,且被暴露于紫外线辐射B,以仅仅固化掩盖装置安装区域45的一部分感光性干膜50。然后,如图2E所示,使用显影液,暴露的感光性干膜50被显影,由此在装置安装区域45上形成掩模50’。1%的碱性溶液被用作显影液。
在图2D和2E所示的步骤中,已经通过包括显影感光性干膜50的湿法处理来形成掩模50'。另外,诸如可剥离的阻焊剂(撕膜片)的橡胶类墨水可以通过丝网印刷被涂布在装置安装区域45上,以及然后被热固化,以形成掩模50'。
接下来,如图3A所示,通过喷沙,微粒C以高速被喷射,由此去掉位于由掩模50’覆盖的区域以外的粘合层11、反射层12、以及增强的反射率层13的部分,并且铝基板10的暴露表面被粗糙化,以形成粗糙表面区域46。在图3A所示的步骤中,可以采用使用冰粒的冰喷射代替喷砂。因为喷砂趋于留下残余,所以冰喷射优于喷砂。
在图3A所示的步骤中,已经通过诸如喷砂(或者冰喷射)的物理手段形成粗糙表面区域46,但是可以通过使用硫酸或者盐酸的腐蚀溶液来化学地形成粗糙表面区域46。当化学地形成粗糙表面区域46时,期望的是,在铝板10'的两侧,层压感光性干膜50。此外,除了使用物理手段,可以通过等离子处理来电气地形成粗糙表面区域46。
接下来,如图3B所示,通过使用碱性溶液,来去除掩模50’。
接下来,如图3C所示,具有暂且附接到其的粘合片14的印刷布线基板18相对于铝基板10被标记,且在规定的温度和压力下被层压到粗糙表面区域46。在层压前,印制布线基板18包括基座15、电极16-1、16-2等等,并且保护层17和尺寸与被形成在铝板10'上的导向孔的尺寸几乎相同的导向孔分别被形成在相应的位置。接下来,使用芯片粘结材料21,每一个LED装置20被粘结在装置安装区域45上。然后,通过使用金导线22,LED装置20彼此连接并且被连接到电极16-1和16-2。
接下来,如图3D所示,使用分配器,硅树脂以基本圆形的形状被沉积在装置安装区域45周围,且被固化,以形成框架构件19。较好地,框架构架19的高度在100μm到600μm的范围内。接下来,使用分配器,荧光体树脂30被沉积在框架构件19的内部,且被固化,以完成LED发光设备1的制造。透明的硅树脂可以被模塑在荧光体树脂30之上。
图4A-4D是用于说明另一个LED发光设备2的制造方法的图。
首先,如图4A所示,制备了没有被处理用于增强反射的铝基板10。在这个实例中,能够从住友轻金属工业(SumitomoLightMetalIndustries)得到的通用铝合金55052-01.2t被用于形成铝基板10。
接下来,如4B所示,通过使用钻孔机,导向孔40被开通穿过铝基板10。
接下来,如图4C所示,阳极化铝的粘合层61、Ag沉积膜的反射层62、以及由SiO2和TiO2层(至少各一层)的层叠所形成的增强的反射率层63只有在对应于装置安装区域45的区域上,一个在另一个顶部地被沉积。
接下来,如图4D所示,具有暂时地被附接到其的粘合片14的印制布线基板18相对于铝基板10被标记,且在规定的温度和压力下被层压到不形成粘合层61、反射层62、以及增强的反射率层63的层叠的区域。在层压之前,印刷布线基板18包括基座15、电极16-1、16-2等等,并且保护层17以及尺寸与被形成在铝板10’上的导向孔的尺寸几乎相同的导向孔分别被形成在对应的位置。接下来,使用芯片粘结材料21,每一个LED装置20被粘结在装置安装区域45上。然后,通过使用金导线22,LED装置20彼此连接并且被连接到电极16-1和16-2。
接下来,使用分配器,硅树脂以基本圆形的形状被沉积在装置安装区域45周围,且被固化,以形成框架构件19。较佳地,框架构件19的高度在100mm到600mm的范围内。接下来,使用分配器,荧光体树脂30被沉积在框架构件19的内部,且被固化,以完成LED发光设备2的制造。透明的硅树脂可以被模塑在荧光体树脂30之上。
图1A-1B至3A-3D所示的LED发光设备1与图4D所示的LED发光设备2之间的唯一差别是粗糙表面区域46的存在或者不存在,粗糙表面区域46存在于LED发光设备1中,但是不存在于LED发光设备2中,LED发光设备2替代地具有暴露的铝基板10的未经处理的表面。
同样在LED发光设备2中,因为印刷布线基板18不是被粘结在被处理用于增强反射的装置安装区域45上,而是通过使用粘合片14被粘结在铝基板10的表面上,所以印刷布线基板18能够被牢牢地粘结到铝基板10。此外,当例如安装LED发光设备2到照明灯具时,因为印刷布线基板18由于被给予LED发光设备2的热历史而没有与铝基板10分层,所以可以制造具有高可靠性的封装。
前面的说明只是图解和描述了当前的发光设备的典型的实施例。并不意指为穷尽的或者限制本发明为公开的任何精确的形式。本领域技术人员可以理解的是,在不背离本发明的范围的情况下,可以进行各种改变,且等价物可以被替代用于其元件。此外,在不背离基本的范围的情况下,在本发明的教导下,可以进行许多修改以适应特定的情况或材料。因此,本发明不局限于公开作为设想用于实施这个发明的最佳模式的特定实施例,而是本发明将包括落入权利要求书的范围内的所有实施例。在不背离其的精神或者范围的情况下,本发明可以不像被具体说明和图解地那样被实践。

Claims (3)

1.一种LED发光设备,其特征在于,包括:
铝基板;
多个反射率增强层,所述多个反射率增强层被形成在所述铝基板上;
LED装置,所述LED装置被粘结在所述多个反射率增强层上;
印刷布线基板,所述印刷布线基板被粘结在所述铝基板上的除了所述多个反射率增强层被形成的区域之外的区域上;
导线,所述导线用于所述印刷布线基板与所述LED装置之间的连接;
框架构件,所述框架构件被形成以包围所述LED装置;以及
荧光体树脂,所述荧光体树脂被沉积在所述框架构件内部的区域之上。
2.如权利要求1所述的LED发光设备,其特征在于,
所述印刷布线基板被粘结在粗糙表面区域上,所述粗糙表面区域被形成在所述多个反射率增强层被形成的所述区域以外。
3.如权利要求1所述的LED发光设备,其特征在于,
所述多个反射率增强层包括粘合层、反射层、以及增强的反射率层。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110870085A (zh) * 2017-07-13 2020-03-06 阿兰诺德股份有限两合公司 具有表面安装在框架支承结构上的结构元件的光电装置和用于这种装置的可反射的复合材料

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014083714A1 (ja) * 2012-11-27 2014-06-05 シチズン電子株式会社 実装基板及びこの実装基板を用いた発光装置
DE102013208223B4 (de) * 2013-05-06 2021-09-16 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines optoelektronischen Bauelements
US10516085B2 (en) * 2014-08-21 2019-12-24 Luminus, Inc. Devices and methods including an LED and reflective die attach material
DE102016103819A1 (de) * 2016-03-03 2017-09-07 Heraeus Deutschland GmbH & Co. KG Anschlussträger, optoelektronisches Bauteil und Verfahren zur Herstellung eines Anschlussträgers oder eines optoelektronischen Bauteils
JP7027129B2 (ja) * 2017-11-09 2022-03-01 シチズン電子株式会社 発光装置
DE102019123886A1 (de) * 2019-09-05 2021-03-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements
CN114256215A (zh) * 2021-12-29 2022-03-29 广东晶科电子股份有限公司 一种照明器件及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4877571B2 (ja) 2005-10-11 2012-02-15 日立化成工業株式会社 発光素子搭載用基板
JP4783647B2 (ja) * 2006-02-27 2011-09-28 パナソニック株式会社 半導体装置用パッケージ部品を用いた半導体装置
JP5179766B2 (ja) * 2007-03-08 2013-04-10 スタンレー電気株式会社 半導体発光装置およびその製造方法
KR101077264B1 (ko) * 2009-02-17 2011-10-27 (주)포인트엔지니어링 광소자용 기판, 이를 갖는 광소자 패키지 및 이의 제조 방법
JP2012212823A (ja) * 2011-03-31 2012-11-01 Hitachi Chem Co Ltd Led搭載用基板の製造方法及びled搭載用基板
JP2013183148A (ja) * 2012-03-05 2013-09-12 Hitachi Cable Ltd 半導体発光素子搭載用基板、半導体発光素子搭載用基板の製造方法及び半導体発光素子搭載用基板を用いた半導体発光装置
JPWO2013150882A1 (ja) * 2012-04-06 2015-12-17 シチズン電子株式会社 Led発光装置
DE102013106858A1 (de) * 2012-07-19 2014-01-23 Samsung Electro-Mechanics Co., Ltd. Substrat für ein LED-Modul und Verfahren zu dessen Herstellung

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110870085A (zh) * 2017-07-13 2020-03-06 阿兰诺德股份有限两合公司 具有表面安装在框架支承结构上的结构元件的光电装置和用于这种装置的可反射的复合材料
CN110870085B (zh) * 2017-07-13 2023-05-12 阿兰诺德股份有限两合公司 具有表面安装在框架支承结构上的结构元件的光电装置和用于这种装置的可反射的复合材料

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