WO2014083714A1 - 実装基板及びこの実装基板を用いた発光装置 - Google Patents
実装基板及びこの実装基板を用いた発光装置 Download PDFInfo
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- WO2014083714A1 WO2014083714A1 PCT/JP2013/001685 JP2013001685W WO2014083714A1 WO 2014083714 A1 WO2014083714 A1 WO 2014083714A1 JP 2013001685 W JP2013001685 W JP 2013001685W WO 2014083714 A1 WO2014083714 A1 WO 2014083714A1
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- 239000000758 substrate Substances 0.000 title claims abstract description 74
- 239000010410 layer Substances 0.000 claims abstract description 106
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- 230000004888 barrier function Effects 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 19
- 239000002344 surface layer Substances 0.000 claims abstract description 13
- 229920005989 resin Polymers 0.000 claims description 17
- 239000011347 resin Substances 0.000 claims description 17
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 16
- 229910052709 silver Inorganic materials 0.000 claims description 16
- 239000004332 silver Substances 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 230000001681 protective effect Effects 0.000 claims description 11
- 238000007740 vapor deposition Methods 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 7
- 230000017525 heat dissipation Effects 0.000 description 7
- 238000005286 illumination Methods 0.000 description 4
- 238000001579 optical reflectometry Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000007743 anodising Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
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- 230000007797 corrosion Effects 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/142—Metallic substrates having insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
- H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0183—Dielectric layers
- H05K2201/0195—Dielectric or adhesive layers comprising a plurality of layers, e.g. in a multilayer structure
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10106—Light emitting diode [LED]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
- H05K2201/2054—Light-reflecting surface, e.g. conductors, substrates, coatings, dielectrics
Definitions
- the present invention relates to a mounting board for mounting a light emitting diode element and other semiconductor elements, and more particularly to a mounting board using a metal base having heat resistance and heat dissipation and a light emitting device using the mounting board.
- LED elements light emitting diode elements
- semiconductor device for communication or control in which various electronic elements are mounted at a high density
- LED A large amount of current flows according to the light emission of the element, high-speed driving, or the load capacity to be driven, thereby generating high heat.
- a conventional mounting board made of a resin material such as an epoxy board has low heat resistance and heat dissipation, and heat generation causes deterioration of the mounting board, and causes changes in characteristics or malfunction of mounted LED elements and other electronic elements. There was a problem.
- Patent Documents 1 to 3 In order to improve such a problem due to heat generation, in the light emitting device for illumination and the high-density semiconductor device, there are many metal mounting boards made of an aluminum material that is lightweight and excellent in heat resistance and heat dissipation. (Patent Documents 1 to 3).
- a reflective layer containing silver having a high light reflectance is formed on the surface of an aluminum substrate on which an anodized oxide film is formed on the surface.
- the requirement for light reflectivity is also met.
- the mounting substrate used in the light emitting device for illumination described above it is necessary to increase the content of silver contained in the reflective layer in order to ensure sufficient light reflectivity.
- the reflective layer containing a large amount of silver is easily affected by heat, the silver contained in the reflective layer diffuses on the surface of the metal substrate, causing problems such as poor insulation and deterioration of the metal substrate. .
- the heat resistance of the mounting board must be sufficient not only in the light emission of the LED element itself but also in a continuity test in a high temperature environment performed after mounting the LED element on the mounting board. Adjustment with reflectivity was necessary.
- an object of the present invention is to prevent the light reflecting material contained in the reflective layer from diffusing to the surface of the metal substrate, thereby ensuring the insulation resistance of the metal substrate having an oxide film formed on the surface and It is an object of the present invention to provide a mounting substrate that is expected to improve the reflectance.
- the mounting substrate of the present invention includes a metal substrate and a surface layer portion formed on the upper surface of the metal substrate, and the surface layer portion is formed on the surface of the metal substrate, A barrier layer formed on the oxide film layer, a reflective layer containing a light reflecting material formed on the barrier layer, and a protective film layer formed on the reflective layer.
- the barrier layer of the mounting substrate of the present invention contains at least one of titanium, nickel, ruthenium, palladium, tungsten, and platinum.
- the barrier layer of the present invention is formed on the oxide film layer with a uniform thickness.
- the light-emitting device of the present invention includes the mounting substrate, at least one light-emitting diode element mounted on the surface thereof, and a light-transmitting resin body that seals the light-emitting diode element.
- the reflective layer is provided on the metal substrate having the oxide film layer formed on the surface via the barrier layer.
- the diffusion of the light reflecting material contained in the reflective layer can be prevented from reaching the oxide film layer.
- the insulation resistance of the oxide film layer can be maintained.
- the barrier layer contains a metal having high light reflectance such as titanium, nickel, ruthenium, palladium, tungsten, platinum, even if the light reflecting material contained in the reflecting layer is diffused. And the fall of a light reflectance can be suppressed by complementation of a barrier layer.
- the barrier layer is formed on the oxide film layer with a uniform thickness, the light can be reflected evenly and the generated heat can be evenly distributed without unevenness. It can dissipate heat.
- the mounting substrate having the surface portion including the barrier layer formed on the surface of the metal substrate is used, a highly durable light emitting device with little change with time can be obtained.
- FIG. 1 shows a mounting board 12 according to a first embodiment of the present invention and a light emitting device 11 using the mounting board 12.
- the light emitting device 11 has a structure in which a plurality of LED elements 15 are arranged on the mounting substrate 12 and the arranged LED elements 15 are sealed with a translucent resin 17 containing a phosphor.
- the mounting substrate 12 of the present invention is excellent in heat dissipation because it has a structure in which the base is the metal substrate 21 and the surface layer portion 22 is formed on the upper surface thereof. Further, at least a pair of external connection electrodes 14 a and 14 b are provided on the outer peripheral portion of the upper surface of the mounting substrate 12.
- the plurality of LED elements 15 arranged on the mounting substrate 12 have a pair of element electrodes on each upper surface, and are mounted on the upper surface of the mounting substrate 12 with an insulating adhesive or the like whose lower surface is transparent. Adjacent LED elements 15 are connected to each other by bonding wires 16, and bonding wires 16a and 16b extending from the LED elements 15 located at both ends are connected to the pair of external connection electrodes 14a and 14b. .
- One of the pair of external connection electrodes 14 a and 14 b is an anode electrode and the other is a cathode electrode, and each LED element 15 emits light when a predetermined voltage is applied to each LED element 15.
- FIG. 2 is an enlarged view of a portion A in FIG. 1 and shows the structure of the surface layer portion 22 formed on the upper surface of the mounting substrate 12.
- the surface layer portion 22 is provided with an oxide film layer 23 on the upper surface of the base metal substrate 21, and is further protected from the reflective layer 25 via the barrier layer 24 on the oxide film layer 23.
- the film layer 26 is provided.
- the metal substrate 21 is made of a rectangular aluminum plate having a planar area on which the plurality of LED elements 15 are arranged.
- Aluminum plates are excellent in heat conductivity, and therefore have good heat dissipation and heat resistance.
- the thickness of an aluminum material is not specifically limited, In one Example, it is about 0.7 mm.
- it is a metal material other than an aluminum plate if it is a metal material with high heat conductivity, it is applied.
- the oxide film layer 23 is made of an alumite layer formed by anodizing the surface of an aluminum plate as the metal substrate 21.
- the anodizing conditions are not particularly limited as long as an alumite layer is formed on the surface of the aluminum plate, and a known method can be adopted.
- a barrier layer 24 is provided on an alumite layer 23 as an oxide film layer, and a reflective layer 25 is provided on the barrier layer 24.
- the barrier layer 24 prevents corrosion and deterioration of the anodized layer 23, and when the light reflecting material contained in the reflective layer 25 diffuses under the influence of heat, the silver reaches the anodized layer 23. It is provided in order to prevent the alumite layer 23 from diffusing and causing dielectric breakdown.
- the barrier layer 24 is formed by forming a film layer having a uniform thickness on the surface of the alumite layer 23 by sputtering, vapor deposition or plating with a metal containing at least one of titanium, nickel, ruthenium, palladium, tungsten and platinum. It is.
- the thickness of the barrier layer 24 uniform, the light emitted from the LED elements 15 can be reflected uniformly, and the heat accompanying light emission can be evenly distributed toward the metal substrate 21. Further, since the barrier layer 24 itself has a light reflecting effect, a certain light reflecting effect can be expected by diffusing silver as the light reflecting material.
- the reflection layer 25 is formed by dispersing silver having a purity of 90% or more as a light reflection material in a transparent resin material, and applying this on the barrier layer 24 to have a constant thickness. Is. In another embodiment, it can also be formed by depositing silver having a purity of 90% or more on the barrier layer 24. The purity of silver is determined in consideration of the light reflection effect, the strength of the deposited film, and compatibility with other layers. The light emitted from the LED element 15 is reflected upward by the reflective layer 25.
- the silver used as the said light reflecting material is an excellent material with high heat conductivity and light reflectivity, materials having high light reflectivity such as aluminum can be used in addition to silver.
- the protective film layer 26 formed on the reflective layer 25 is provided to insulate and protect the surface of the reflective layer 25.
- the reflective layer 25 is thinly coated with a highly light-transmitting resin material such as an epoxy resin, an acrylic resin, a silicone resin, or a fluororesin so as not to reduce the light reflectance of the reflective layer 25.
- the protective film layer 26 may be formed by forming a deposited film of titanium oxide or silicon oxide on the reflective layer 25.
- a multilayer protective film may be formed by various combinations of the light transmissive resin coating, the titanium oxide vapor deposition film, and the silicon oxide vapor deposition film. The multilayer structure can increase the strength of the protective film itself, and also serves as a countermeasure against pinholes in the protective film.
- the mounting substrate 12 in which the surface layer portion 22 is formed on the surface of the metal substrate 21 heat generated when the plurality of LED elements 15 emit light can be efficiently released to the metal substrate 21 side. Further, the light emitted from the plurality of LED elements 15 can be efficiently reflected above the mounting substrate 12 by the reflection effect of the reflection layer 25.
- the barrier layer 24 is provided on the anodized layer 23 and the reflective layer 25 is provided on the barrier layer 24, silver in the reflective layer 25 diffuses to the anodized layer 23 due to heat generation or the like. There is no possibility that the metal substrate 21 will be directly affected by this. For this reason, the stable quality as the light-emitting device 11 can be maintained over a long period of time without deteriorating the characteristics of the mounting substrate 12 and the plurality of LED elements 15 mounted on the mounting substrate 12.
- the mounting board 12 needs to pass a continuity test under a high-temperature environment in which a greater stress is applied than in actual use in a shipping test at the final stage of becoming a product. Since the stress due to such high temperature is applied to the mounting substrate 12, the reflective layer 25 is particularly susceptible to heat, but the barrier layer 24 below the reflective layer 25 causes the silver contained in the reflective layer 25 to diffuse. Since it can be suppressed, the light reflectance is not lowered. As a result, the incidence of defective products can be greatly reduced, and the yield can be improved.
- FIG. 3 shows a mounting board 12 ′ according to a second embodiment of the present invention and a light emitting device 11 ′ using the mounting board 12.
- the mounting substrate 12 ′ according to this embodiment has a metal substrate 21 and a surface layer portion 22 formed on the upper surface thereof having the same configuration as the mounting substrate 12 according to the previous embodiment, and a plurality of LED elements on the surface layer portion 22. Since the circuit board 13 is provided so as to surround the circuit board 15, the same components are denoted by the same reference numerals, and detailed description thereof is omitted. Note that at least a pair of external connection electrodes 14 a and 14 b are provided on the upper surface of the circuit board 13.
- a plurality of LED elements 15 are arranged on the upper surface of the mounting substrate 12 ′ having the above-described configuration, adjacent elements are connected to each other by bonding wires 16, and external connection electrodes 14a, Bonding wires 16a and 16b extend from the LED elements 15 at both ends to 14b. Further, the plurality of LED elements 15 arranged on the mounting substrate 12 ′ are sealed with a translucent resin 17 containing a phosphor. In this embodiment, the periphery of the translucent resin 17 is a ring shape. It is surrounded by the reflection frame 18. The reflection effect can be enhanced by forming the reflection frame 18 with a white resin.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
Description
12、12’ 実装基板
13 回路基板
14a、14b 外部接続用電極
15 LED素子
16、16a、16b ボンディングワイヤ
17 透光性樹脂
18 反射枠
21 金属基板
22 表層部
23 酸化皮膜層(アルマイト層)
24 バリア層
25 反射層
26 保護膜層
Claims (13)
- 金属基板と、金属基板の上面に形成された表層部とを備え、
前記表層部が金属基板の表面に形成された酸化皮膜層と、酸化皮膜層の上に形成されたバリア層と、バリア層の上に形成された光反射材を含有する反射層と、反射層の上に形成された保護膜層と、を備える実装基板。 - 前記金属基板はアルミニウム板からなり、酸化皮膜層がアルミニウム板の表面に形成されたアルマイト層からなる請求項1に記載の実装基板。
- 前記バリア層は、チタン、ニッケル、ルテニウム、パラジウム、タングステン、白金のうち少なくとも1つを含んでいる請求項1に記載の実装基板。
- 前記バリア層は、前記酸化皮膜層の上に均一の厚みに形成される請求項1に記載の実装基板。
- 前記反射層は、光透過性の樹脂の中に銀を含有させた樹脂膜からなる請求項1に記載の実装基板。
- 前記反射層は、銀の蒸着膜からなる請求項1に記載の実装基板。
- 前記銀は、純度が90%以上である請求項5又は6に記載の実装基板。
- 前記保護膜層は、光透過性の樹脂膜からなる請求項1に記載の実装基板。
- 前記保護膜層は、酸化チタンの蒸着膜又は酸化ケイ素の蒸着膜からなる請求項1に記載の実装基板。
- 前記保護膜層は、光透過性の樹脂膜、酸化チタンの蒸着膜、酸化ケイ素の蒸着膜を適宜組み合わせた多層膜からなる請求項1に記載の実装基板。
- 前記表層部の上面端部に配線パターンが形成された配線基板が設けられる請求項1に記載の実装基板。
- 請求項1に記載の実装基板と、その表面に実装される少なくとも1つの発光ダイオード素子と、この発光ダイオード素子を封止する光透過性の樹脂体とを備えた発光装置。
- 前記光透過性の樹脂は、周囲が枠体に囲まれている請求項12に記載の発光装置。
Priority Applications (5)
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CN201380061994.1A CN104813493A (zh) | 2012-11-27 | 2013-03-14 | 安装基板及使用该安装基板的发光装置 |
US14/647,161 US9368707B2 (en) | 2012-11-27 | 2013-03-14 | Mounting substrate and light-emitting device using the same |
EP13858852.0A EP2927971A4 (en) | 2012-11-27 | 2013-03-14 | MOUNTING SUBSTRATE AND LIGHT EMITTING APPARATUS USING MOUNTING SUBSTRATE |
JP2014549755A JPWO2014083714A1 (ja) | 2012-11-27 | 2013-03-14 | 実装基板及びこの実装基板を用いた発光装置 |
US15/155,609 US20160260880A1 (en) | 2012-11-27 | 2016-05-16 | Light-emitting device using mounting substrate |
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US14/647,161 A-371-Of-International US9368707B2 (en) | 2012-11-27 | 2013-03-14 | Mounting substrate and light-emitting device using the same |
US15/155,609 Continuation-In-Part US20160260880A1 (en) | 2012-11-27 | 2016-05-16 | Light-emitting device using mounting substrate |
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WO2014083714A1 true WO2014083714A1 (ja) | 2014-06-05 |
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JP2017163058A (ja) * | 2016-03-10 | 2017-09-14 | パナソニックIpマネジメント株式会社 | Ledモジュール |
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EP2927971A4 (en) | 2015-12-02 |
US20150325761A1 (en) | 2015-11-12 |
JPWO2014083714A1 (ja) | 2017-01-05 |
EP2927971A1 (en) | 2015-10-07 |
CN104813493A (zh) | 2015-07-29 |
US9368707B2 (en) | 2016-06-14 |
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