JP2017163058A - Ledモジュール - Google Patents
Ledモジュール Download PDFInfo
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- JP2017163058A JP2017163058A JP2016047665A JP2016047665A JP2017163058A JP 2017163058 A JP2017163058 A JP 2017163058A JP 2016047665 A JP2016047665 A JP 2016047665A JP 2016047665 A JP2016047665 A JP 2016047665A JP 2017163058 A JP2017163058 A JP 2017163058A
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- layer
- led module
- resist layer
- metal layer
- led chip
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- 239000000463 material Substances 0.000 claims abstract description 102
- 229910052751 metal Inorganic materials 0.000 claims abstract description 91
- 239000002184 metal Substances 0.000 claims abstract description 91
- 239000011347 resin Substances 0.000 claims abstract description 70
- 229920005989 resin Polymers 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 239000000853 adhesive Substances 0.000 claims abstract description 32
- 230000001070 adhesive effect Effects 0.000 claims abstract description 32
- 229920000178 Acrylic resin Polymers 0.000 claims abstract description 7
- 238000007789 sealing Methods 0.000 claims description 24
- 239000004593 Epoxy Substances 0.000 claims description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 11
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 7
- 239000004925 Acrylic resin Substances 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 230000004907 flux Effects 0.000 abstract description 13
- 238000012423 maintenance Methods 0.000 abstract description 13
- 230000007423 decrease Effects 0.000 abstract description 8
- 229920002050 silicone resin Polymers 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 212
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 13
- 239000007789 gas Substances 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 238000005286 illumination Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000001579 optical reflectometry Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000012463 white pigment Substances 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48095—Kinked
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
Description
図1を用いて、実施の形態に係るLEDモジュール1の構成を説明する。図1は、実施の形態に係るLEDモジュール1の構成を示す図である。図1において、(a)は、同LEDモジュール1の一部拡大断面図であり、(b)は、(a)における同LEDモジュール1の平面図である。なお、図1の(b)では、レジスト層13の第1の層131及び第2の層132のパターンを分かりやすくするために、便宜上ハッチングを施している。
基板10は、LEDチップ20を実装するための実装基板である。基板10は、樹脂基材11をベースとする樹脂基板であり、本実施の形態では、樹脂基材11と、樹脂基材11の上方に形成された金属層12と、樹脂基材11の上方に形成されたレジスト層13とを有する。本実施の形態における基板10は、さらに、樹脂基材11の下方に形成された金属層14と、樹脂基材11の下方に形成されたレジスト層15とを有する。
LEDチップ20は、LED素子の一例であり、樹脂基材11の上方に実装されている。本実施の形態において、LEDチップ20は、基板10に直接実装されている。具体的には、LEDチップ20は、レジスト層13の上に接着材40を介して実装されている。より具体的には、LEDチップ20は、レジスト層13の最上層(本実施の形態では、第2の層132)の上に実装されている。
封止部材30は、LEDチップ20を封止する封止材である。封止部材30は、LEDチップ20が発する光によって励起されてLEDチップ20の光の波長とは異なる波長の光を放射する波長変換材と、この波長変換材を含む透光性材料とによって構成されている。
次に、本実施の形態におけるLEDモジュール1の効果について、図2及び図3を用いて説明する。図2は、比較例のLEDモジュール1XにおけるLEDチップ20の周辺構造を示す断面図である。図3は、実施の形態に係るLEDモジュール1におけるLEDチップ20の周辺構造を示す断面図であり、図1(a)の破線で囲まれる領域Aに対応している。
以上、本実施の形態におけるLEDモジュール1によれば、樹脂基材11と、樹脂基材11の上方に形成された金属層12と、金属層12の上方に形成された複数層からなるレジスト層13と、レジスト層13の上に接着材40を介して実装されたLEDチップ20とを有し、レジスト層13は、エポキシアクリル系又はシリコン系の樹脂材料によって構成されており、接着材40は、白色である。
以上、本発明に係るLEDモジュールについて、実施の形態に基づいて説明したが、本発明は、上記の実施の形態に限定されるものではない。
11 樹脂基材
12 金属層
13 レジスト層
13a 開口部
131 第1の層
132 第2の層
20 LEDチップ
30 封止部材
40 接着材
50 ワイヤ
Claims (6)
- 樹脂基材と、
前記樹脂基材の上方に形成された金属層と、
前記金属層の上方に形成された複数層からなるレジスト層と、
前記レジスト層の上に接着材を介して実装されたLEDチップとを有し、
前記レジスト層は、エポキシアクリル系又はシリコン系の樹脂材料によって構成されており、
前記接着材は、白色である
LEDモジュール。 - 前記金属層と前記LEDチップとを電気的に接続するワイヤを有し、
前記レジスト層は、前記金属層を露出させる開口部を有し、
前記ワイヤは、前記開口部を介して前記金属層に電気的に接続されている
請求項1に記載のLEDモジュール。 - 前記開口部の外側周辺部分における前記レジスト層は、1層のみである
請求項2に記載のLEDモジュール。 - 前記レジスト層は、エポキシアクリル系の樹脂材料によって構成されている
請求項1〜3のいずれか1項に記載のLEDモジュール。 - 前記金属層は、銅によって構成されている
請求項1〜4のいずれか1項に記載のLEDモジュール。 - さらに、前記LEDチップを封止する封止部材を備える
請求項1〜5のいずれか1項に記載のLEDモジュール。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016047665A JP2017163058A (ja) | 2016-03-10 | 2016-03-10 | Ledモジュール |
DE102017104825.1A DE102017104825A1 (de) | 2016-03-10 | 2017-03-08 | LED-Modul |
US15/454,256 US10014458B2 (en) | 2016-03-10 | 2017-03-09 | LED module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016047665A JP2017163058A (ja) | 2016-03-10 | 2016-03-10 | Ledモジュール |
Publications (1)
Publication Number | Publication Date |
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JP2017163058A true JP2017163058A (ja) | 2017-09-14 |
Family
ID=59700475
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2016047665A Pending JP2017163058A (ja) | 2016-03-10 | 2016-03-10 | Ledモジュール |
Country Status (3)
Country | Link |
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US (1) | US10014458B2 (ja) |
JP (1) | JP2017163058A (ja) |
DE (1) | DE102017104825A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023248760A1 (ja) * | 2022-06-23 | 2023-12-28 | スタンレー電気株式会社 | 半導体発光装置、および、半導体発光装置の製造方法 |
JP7549214B2 (ja) | 2020-10-30 | 2024-09-11 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6817599B2 (ja) * | 2016-03-10 | 2021-01-20 | パナソニックIpマネジメント株式会社 | Ledモジュール |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007013092A (ja) * | 2005-05-31 | 2007-01-18 | Shinko Electric Ind Co Ltd | 配線基板の製造方法および半導体装置の製造方法 |
JP2007324205A (ja) * | 2006-05-30 | 2007-12-13 | Toyoda Gosei Co Ltd | 発光装置 |
US20100044742A1 (en) * | 2008-08-20 | 2010-02-25 | Samsung Electro-Mechanics Co., Ltd. | Light emitting diode module |
JP2012109404A (ja) * | 2010-11-17 | 2012-06-07 | Panasonic Corp | 発光装置および発光装置を備える照明装置 |
JP2013038384A (ja) * | 2011-07-12 | 2013-02-21 | Sumitomo Electric Ind Ltd | Led発光素子搭載用フレキシブルプリント配線板、led発光素子搭載フレキシブルプリント配線板及び照明装置 |
JP2014146685A (ja) * | 2013-01-29 | 2014-08-14 | Hitachi Chemical Co Ltd | Led搭載用基板 |
CN104037302A (zh) * | 2014-05-23 | 2014-09-10 | 常州市武进区半导体照明应用技术研究院 | 一种led封装组件 |
JP2014187081A (ja) * | 2013-03-22 | 2014-10-02 | Nichia Chem Ind Ltd | 発光装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4103932B2 (ja) | 2007-06-20 | 2008-06-18 | ソニー株式会社 | 光源装置、表示装置 |
JP5600443B2 (ja) | 2010-02-23 | 2014-10-01 | スタンレー電気株式会社 | 発光装置およびその製造方法 |
CN203260631U (zh) | 2010-07-01 | 2013-10-30 | 西铁城控股株式会社 | Led光源装置 |
TWI597865B (zh) * | 2012-06-06 | 2017-09-01 | Hitachi Chemical Co Ltd | Optical semiconductor device |
JP6004795B2 (ja) | 2012-07-06 | 2016-10-12 | シチズンホールディングス株式会社 | Led光源装置及び光反射性基板 |
JP5609925B2 (ja) * | 2012-07-09 | 2014-10-22 | 日亜化学工業株式会社 | 発光装置 |
CN104813493A (zh) * | 2012-11-27 | 2015-07-29 | 西铁城电子株式会社 | 安装基板及使用该安装基板的发光装置 |
JP6583669B2 (ja) * | 2015-08-03 | 2019-10-02 | パナソニックIpマネジメント株式会社 | Ledモジュール |
JP6675111B2 (ja) * | 2015-08-03 | 2020-04-01 | パナソニックIpマネジメント株式会社 | Ledモジュール |
JP6704189B2 (ja) * | 2015-08-03 | 2020-06-03 | パナソニックIpマネジメント株式会社 | Ledモジュール |
-
2016
- 2016-03-10 JP JP2016047665A patent/JP2017163058A/ja active Pending
-
2017
- 2017-03-08 DE DE102017104825.1A patent/DE102017104825A1/de not_active Withdrawn
- 2017-03-09 US US15/454,256 patent/US10014458B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007013092A (ja) * | 2005-05-31 | 2007-01-18 | Shinko Electric Ind Co Ltd | 配線基板の製造方法および半導体装置の製造方法 |
JP2007324205A (ja) * | 2006-05-30 | 2007-12-13 | Toyoda Gosei Co Ltd | 発光装置 |
US20100044742A1 (en) * | 2008-08-20 | 2010-02-25 | Samsung Electro-Mechanics Co., Ltd. | Light emitting diode module |
JP2012109404A (ja) * | 2010-11-17 | 2012-06-07 | Panasonic Corp | 発光装置および発光装置を備える照明装置 |
JP2013038384A (ja) * | 2011-07-12 | 2013-02-21 | Sumitomo Electric Ind Ltd | Led発光素子搭載用フレキシブルプリント配線板、led発光素子搭載フレキシブルプリント配線板及び照明装置 |
JP2014146685A (ja) * | 2013-01-29 | 2014-08-14 | Hitachi Chemical Co Ltd | Led搭載用基板 |
JP2014187081A (ja) * | 2013-03-22 | 2014-10-02 | Nichia Chem Ind Ltd | 発光装置 |
CN104037302A (zh) * | 2014-05-23 | 2014-09-10 | 常州市武进区半导体照明应用技术研究院 | 一种led封装组件 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7549214B2 (ja) | 2020-10-30 | 2024-09-11 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
WO2023248760A1 (ja) * | 2022-06-23 | 2023-12-28 | スタンレー電気株式会社 | 半導体発光装置、および、半導体発光装置の製造方法 |
Also Published As
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US10014458B2 (en) | 2018-07-03 |
US20170263835A1 (en) | 2017-09-14 |
DE102017104825A1 (de) | 2017-09-14 |
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