JP2007129053A - Led発光装置。 - Google Patents
Led発光装置。 Download PDFInfo
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- JP2007129053A JP2007129053A JP2005320214A JP2005320214A JP2007129053A JP 2007129053 A JP2007129053 A JP 2007129053A JP 2005320214 A JP2005320214 A JP 2005320214A JP 2005320214 A JP2005320214 A JP 2005320214A JP 2007129053 A JP2007129053 A JP 2007129053A
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- led chip
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
【解決手段】 アルミ板にアルマイト処理した基台1の上に、上面に所定の導電パターン2を形成し、LEDチップ3をダイボンドする領域を有する開口部4aを備えたプリント基板4を貼付し、プリント基板4の開口部4aに位置する基台1の上にLEDチップ3を透明ペーストでダイボンドする。LEDチップ3の上面電極とプリント基板4上に形成した導電パター2ンとを金線5でワイヤーボンディングし、プリント基板4の外周上面に、LEDチップ3を覆うように外周部に封止樹脂注入孔6cを有するシリコーン樹脂よりなるレンズ付ケース6を貼付し、レンズ付ケース6に設けた封止樹脂注入孔6cよりゴム/ゲル系シリコーン樹脂よりなる封止樹脂7を注入してLEDチップ3を封止する。アルミ板の光の反射率は変化が少なく、光度劣化が飛躍的に向上する。放熱性が向上する。
【選択図】 図3
Description
前記LEDチップ11は第1電極18上に搭載され、銀ペーストのような導電性接着剤によって接着されている。これによってLEDチップ11の下面電極は第1電極18を介して第1のリード15に電気的に接続される。他方、LEDチップ11の上面電極はボンディングワイヤである金線20を介して第2電極19に電気的に接続される。
2 導電パターン
3 LEDチップ
4 プリント基板
4a 開口部
5 ボンディングワイヤ(金線)
6 レンズ付ケース
6a レンズ部
6b 外周部
6c 封止樹脂注入孔
7 封止樹脂
Claims (11)
- プリント基板にLEDチップを実装し、該プリント基板の上面にレンズ付ケースを貼付したLED発光装置において、熱伝導率の高い部材よりなる基台の上に、上面に所定の導電パターンを形成し、且つLEDチップをダイボンドする領域を有する開口部を備えたプリント基板を貼り合わせ、該プリント基板の開口部に位置する基台の上にLEDチップをダイボンドすると共に、前記LEDチップの上面電極とプリント基板上に形成した導電パターンとを金線でワイヤーボンディングし、前記プリント基板の外周上面に、前記LEDチップを覆うように外周部に封止樹脂注入孔を有するレンズ付ケースを貼付し、前記レンズ付ケースに設けた封止樹脂注入孔より封止樹脂を注入してLEDチップを封止したことを特徴とするLED発光装置。
- 前記熱伝導率の高い部材よりなる基台は、アルミ板にアルマイト処理が施されていることを特徴とする請求項1記載のLED発光装置。
- 前記熱伝導率の高い部材よりなる基台は、銅板にアルミメッキ処理が施されていることを特徴とする請求項1記載のLED発光装置。
- 前記プリント基板の開口部が位置する基台の上に、透明ペースト(シリコーンダイボンドペースト)でLEDチップをダイボンド接着したことを特徴とする請求項1記載のLED発光装置。
- 前記プリント基板の開口部が位置する基台の上に、酸化チタンを入れた白色ペーストでLEDチップをダイボンド接着したことを特徴とする請求項1記載のLED発光装置。
- 前記レンズ付ケースは、シリコーン樹脂を使用したことを特徴とする請求項1記載のLED発光装置。
- 前記封止樹脂は、ゴム/ゲル系シリコーン樹脂であることを特徴とする請求項1記載のLED発光装置。
- 前記封止樹脂は、白色の場合は、ゴム/ゲル系シリコーン樹脂の中に蛍光体・拡散材を含有することを特徴とする請求項1記載のLED発光装置。
- 前記プリント基板の外周部上面のレンズ付ケースの貼付け代に、レジスト印刷でレジスト膜を形成したことを特徴とする請求項1記載のLED発光装置。
- 前記LEDチップを実装する基台の実装部分に、すり鉢状に凹んだ反射カップを形成したことを特徴とする請求項2または3記載のLED発光装置。
- 前記アルマイト処理が施されている基台の上面に、多層コーティング膜を形成したことを特徴とする請求項2または9記載のLED発光装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005320214A JP5066333B2 (ja) | 2005-11-02 | 2005-11-02 | Led発光装置。 |
DE102006050376.7A DE102006050376B4 (de) | 2005-11-02 | 2006-10-25 | Leuchtdiodeneinheit |
US11/589,282 US7560748B2 (en) | 2005-11-02 | 2006-10-30 | Light emitting diode unit |
CN2006101436174A CN1960016B (zh) | 2005-11-02 | 2006-11-02 | 发光二极管单元 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005320214A JP5066333B2 (ja) | 2005-11-02 | 2005-11-02 | Led発光装置。 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007129053A true JP2007129053A (ja) | 2007-05-24 |
JP2007129053A5 JP2007129053A5 (ja) | 2008-11-20 |
JP5066333B2 JP5066333B2 (ja) | 2012-11-07 |
Family
ID=37950103
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005320214A Active JP5066333B2 (ja) | 2005-11-02 | 2005-11-02 | Led発光装置。 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7560748B2 (ja) |
JP (1) | JP5066333B2 (ja) |
CN (1) | CN1960016B (ja) |
DE (1) | DE102006050376B4 (ja) |
Cited By (10)
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JP2009081194A (ja) * | 2007-09-25 | 2009-04-16 | Sanyo Electric Co Ltd | 発光モジュールおよびその製造方法 |
JP2010129915A (ja) * | 2008-11-28 | 2010-06-10 | Panasonic Electric Works Co Ltd | 砲弾型led搭載基板 |
CN101887939A (zh) * | 2010-05-24 | 2010-11-17 | 晶科电子(广州)有限公司 | 一种提高led外量子效率的封装结构及其封装方法 |
EP2365549A1 (en) | 2010-03-12 | 2011-09-14 | Asahi Glass Company, Limited | Light-emitting device |
JP2013115360A (ja) * | 2011-11-30 | 2013-06-10 | Seiko Epson Corp | 光照射装置 |
US8476656B2 (en) | 2008-09-25 | 2013-07-02 | Citizen Electronics Co., Ltd. | Light-emitting diode |
WO2013150882A1 (ja) * | 2012-04-06 | 2013-10-10 | シチズン電子株式会社 | Led発光装置 |
WO2014083714A1 (ja) | 2012-11-27 | 2014-06-05 | シチズン電子株式会社 | 実装基板及びこの実装基板を用いた発光装置 |
JP2017124632A (ja) * | 2010-03-23 | 2017-07-20 | 株式会社朝日ラバー | 可撓性反射基材、その製造方法及びその反射基材に用いる原材料組成物 |
US10084122B2 (en) | 2014-07-17 | 2018-09-25 | Citizen Electronics Co., Ltd. | Light-emitting apparatus and method of manufacturing the same |
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DE102006015335B4 (de) * | 2006-04-03 | 2013-05-02 | Ivoclar Vivadent Ag | Halbleiter-Strahlungsquelle sowie Lichthärtgerät |
KR100828900B1 (ko) | 2006-09-04 | 2008-05-09 | 엘지이노텍 주식회사 | 발광 다이오드 패키지 및 그 제조방법 |
US7889421B2 (en) * | 2006-11-17 | 2011-02-15 | Rensselaer Polytechnic Institute | High-power white LEDs and manufacturing method thereof |
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US8288936B2 (en) * | 2007-06-05 | 2012-10-16 | Sharp Kabushiki Kaisha | Light emitting apparatus, method for manufacturing the light emitting apparatus, electronic device and cell phone device |
KR100888228B1 (ko) * | 2007-06-22 | 2009-03-12 | (주)웨이브닉스이에스피 | 금속베이스 광소자 패키지 모듈 및 그 제조방법 |
JP2009110737A (ja) * | 2007-10-29 | 2009-05-21 | Citizen Electronics Co Ltd | 照明装置及びその製造方法 |
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Also Published As
Publication number | Publication date |
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US7560748B2 (en) | 2009-07-14 |
JP5066333B2 (ja) | 2012-11-07 |
DE102006050376A1 (de) | 2007-05-10 |
DE102006050376B4 (de) | 2019-05-29 |
US20070102722A1 (en) | 2007-05-10 |
CN1960016A (zh) | 2007-05-09 |
CN1960016B (zh) | 2010-05-12 |
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