TWI499099B - 具有保護層之半導體發光元件 - Google Patents

具有保護層之半導體發光元件 Download PDF

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TWI499099B
TWI499099B TW098146164A TW98146164A TWI499099B TW I499099 B TWI499099 B TW I499099B TW 098146164 A TW098146164 A TW 098146164A TW 98146164 A TW98146164 A TW 98146164A TW I499099 B TWI499099 B TW I499099B
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layer
light
emitting element
protective layer
substrate
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TW098146164A
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TW201123563A (en
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Chiu Lin Yao
Chih Chiang Lu
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Epistar Corp
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Priority to TW098146164A priority Critical patent/TWI499099B/zh
Priority to US12/982,210 priority patent/US8779447B2/en
Publication of TW201123563A publication Critical patent/TW201123563A/zh
Priority to US14/293,825 priority patent/US9349909B2/en
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Publication of TWI499099B publication Critical patent/TWI499099B/zh
Priority to US15/079,812 priority patent/US9647177B2/en
Priority to US15/472,882 priority patent/US9911786B2/en

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Description

具有保護層之半導體發光元件
本發明係關於一半導體發光元件，尤其是一種具有保護層結構之半導體發光元件。
發光二極體具一活性層(active layer)，置於兩種不同電性的束縛層(cladding layer)之間。當於兩束縛層上方之電極施加一驅動電流時，兩束縛層之電子與電洞會注入活性層，並於活性層中結合而放出具全向性之光線，而自發光二極體元件的各個表面射出。由於不同於白熾燈之發光原理，所以發光二極體被稱為冷光源。發光二極體由於具有體積小、壽命長、驅動電壓低、耗電量低、反應速度快、耐震性佳等優點，已被廣泛應用於如汽車、電腦、通訊與消費電子產品等領域中。
然而，目前一般發光二極體元件應用上有一較大之限制在僅能於低壓的直流電下操作，若於高壓或是交流電下操作可能損壞發光二極體，故使用上必須配合直流轉換電路才能用於市電系統。另一方面，目前一般發光二極體元件組裝加工時容易因靜電放電(Electric Static Discharge,EDS)使瞬間逆向電壓升高，因而造成發光二極體的崩潰。
本發明提出一種發光元件，至少包含一散熱基板，一第一連 接層位於散熱基板之上，一保護層位於第一連接層之上，一第二連接層位於保護層之上，及一發光單元位於第二連接層之上。其中保護層具高絕緣性，可避免發光單元與散熱基板之間形成漏電路徑。
本發明提出一種發光元件，其中保護層具高絕緣性，其可為無掺雜雜質之氮化鎵或無掺雜雜質之III-V族材料所組成。
本發明提出一種發光裝置，至少包含一散熱基板，一第一連接層位於散熱基板之上，一保護層位於第一連接層之上，一第二連接層位於保護層之上，一微晶粒發光模組位於第二連接層之上，及一導電結構電性連接各微晶粒。
本發明提出一種發光裝置，其中微晶粒發光模組可利用直流電驅動或交流電驅動。
本發明提出一種發光裝置，其中導電結構電性連接各微晶粒，電性連接方式包含串聯或並聯。
本發明提出一種發光裝置，其中發光模組具有至少二微晶粒，且每一微晶粒均具有至少一活性層。每一微晶粒的活性層具有相同或相異波長。
本發明提出一種發光裝置，其中保護層具高絕緣性，可為無掺雜雜質之氮化鎵或無掺雜雜質之III-V族材料所組成。
本發明提出一種可避免逆向電流擊穿結構之半導體發光元件，至少包含一散熱基板，一第一連接層位於散熱基板之上，一保護層位於第一連接層之上，一第二連接層位於保護層之上，一發光二極體位於第二連接層之上，及一導電結構連接保護層及發光二極體，使二者成為反向並聯的電性連接。
本發明提出一種可避免逆向電流擊穿結構之半導體發光元 件，其中保護層具導電性，可為掺雜雜質之氮化鎵、掺雜雜質之III-V族材料或掺雜雜質之氧化鋅所組成。
本發明提出一種可避免逆向電流擊穿結構之半導體發光元件，其中保護層具導電性，可由二種或二種以上材料交互堆疊組合而成一多層結構。
本發明提出一種可避免逆向電流擊穿結構之半導體發光元件，其中保護層具導電性，可為氧化鋅和矽或氧化鋅和氧化銦錫交互堆疊而成一多層結構。
本發明第一實施例揭示關於一種包含保護層結構的半導體發光元件，其中保護層具有高絕緣性，可避免半導體發光元件的發光單元與散熱基板間形成漏電路徑。為了使本實施例之敘述更加詳盡與完備，可配合第1圖至第7圖之圖示，並參照下列描述。本發明揭示一半導體發光元件11，發光元件具有一發光單元，此發光單元至少包含一磊晶結構1。磊晶結構1包括一第一成長基板10、一第一電性半導體層20形成於第一成長基板10之上、一活性層30形成於第一電性半導體層20之上、以及一第二電性半導體層40形成於活性層30之上，如第1圖所示。形成磊晶結構1之方法包括提供一第一成長基板10；接著，於第一成長基板10上以有機金屬化學氣相沉積法(Metal-Organic Chemical Vapor Deposition)成長第一電性半導體層20；於完成第一電性半導體層20成長後，接續成長活性層30及成長第二電性半導體層40。 其中，所述之第一成長基板10可為砷化鎵(GaAs)；所述之第一電性半導體層20、活性層30以及第二電性半導體層40之材料係包含III-V族化合物，例如磷化鋁鎵銦系列之材料。於第二電性半導體層40表面以蝕刻方式形成一規則或不規則的粗糙表面後，再於其上形成一第二連接層50。
如第2圖所示，提供另一磊晶結構2，係於一第二成長基板60上以有機金屬化學氣相沉積法(Metal-Organic Chemical Vapor Deposition)成長一保護層70。其中，第二成長基板60可為氧化鋁(sapphire)；保護層70具高絕緣性，其組成材料係包含III-V族化合物，例如氮化鋁鎵銦系列之材料，其中較佳材料為未掺雜雜質之氮化鎵。亦可在保護層70表面以蝕刻方式形成一規則或不規則的粗糙表面(圖未示)。接著，利用一第二連接層50將磊晶結構1和磊晶結構2接合後，移除第二成長基板60，形成如第3圖之結構。
接著，如第4圖所示，於保護層70之上依序形成一附著層80、一反射層90、及一第三連接層100A。如第5圖所示，提供一散熱基板110，再形成一第四連接層100B於散熱基板110之上。將如第4圖所示具有第三連接層100A之結構與如第5圖的所示具有第四連接層100B之結構面對面接合，且第三連接層100A與第四連接層100B形成為一第一連接層100，如第6圖所示。其中第二連接層50材料可為BCB、Epoxy、SOG、SU8等高分子材料，或為氧化 物如TiO2、Ti2O5、Ta2O3、Ta2O5、ITO、AZO、ZnO及Al2O3，或氮化物如SiONx、SiNx、GaN、AlN，或diamond。附著層80的功用為增加保護層70與反射層90之間的附著力，其材料可為氧化銦錫(ITO)或氧化鋅，反射層90材料可為鋁、銀或其它高反射率材料。第一連接層100、第三連接層100 A、第四連接層100 B材料可為焊錫、低溫金屬、及金屬矽化物等，例如為PbSn、AuGe、AuBe、AuSi、Sn、In、PdIn。散熱基板110材料可為Si、Ge、Cu、Mo、AlN、ZnO等。
接著移除第一成長基板10後裸露出第一電性半導體層20上表面，以蝕刻方式形成一規則或不規則的粗糙表面。再從第一電性半導體層20起由上往下蝕刻至裸露出部份第二電性半導體層40表面，再分別於第一電性半導體層20上表面及裸露之第二電性半導體層40表面形成電極15及25，即形成如第7圖結構之發光元件11。
本發明第二實施例揭示關於一種包含保護層結構的半導體發光元件，其中保護層具高絕緣性，可避免半導體發光元件於高電壓操作時半導體發光元件結構被擊穿。為了使本實施例之敘述更加詳盡與完備，可配合第8圖至第12圖之圖示，並參照下列描述。
本實施例之半導體發光元件可以直流電或交流電驅動操作，其中元件結構與製作步驟與第一實施例第1-6圖相同，不再重複敘述。先將第6圖中第一成長基板10移除，如第8圖所示。接著如 第9圖所示，藉由黃光顯影與蝕刻製程蝕刻第一電性半導體層20、活性層30、第二電性半導體層40至裸露出第二連接層50上表面，以形成複數個開口140。之後，再進行一次黃光顯影與蝕刻製程以蝕刻第一電性半導體層20、活性層30至裸露出第二電性半導體層40上表面為止。如第10圖所示，再分別形成複數的電極35、45以與第一電性半導體層20、第二電性半導體層40相互電性連接，以形成複數個微晶粒13。其中電極35、45以蒸鍍方式形成，係為一歐姆電極。
接著，於複數個開口140內壁形成一隔絕層120，此隔絕層120作用為避免漏電流，其為介電材料所組成，如SiOx或SiNx等，如第11圖所示。最後形成複數個導電結構130以電性連接複數個電極35、45，其電性連接方式可為串聯或並聯。由複數個微晶粒13所組成發光模組之發光裝置12如第12圖所示，其中，各微晶粒之各活性層具有相同或相異波長，且由複數個微晶粒所組成發光模組可以直流電或交流電驅動操作。
本發明第三實施例揭示關於一種包含保護層結構的半導體元件，其中保護層為可避免逆向電流擊穿半導體元件之結構設計。為了使本實施例之敘述更加詳盡與完備，可配合第13(a)圖至第13(d)圖之圖示，並參照下列描述。
本實施例以具有避免逆向電流擊穿結構之發光二極體14為例：其中元件結構與製作步驟與第一實施例第1-6圖不同點有三點：一、保護層70由導電物質所組成，且其電性與第二電性半導 點：一、保護層70由導電物質所組成，且其電性與第二電性半導體層40相異；其材料可為掺雜雜質之氮化鎵、掺雜雜質之III-V族材料或掺雜雜質之氧化鋅的單層結構，或由氧化鋅和矽或氧化鋅和氧化銦錫二種材料交互堆疊組合而成一多層結構。二、形成第二連接層50的材料可為焊錫、低溫金屬、及金屬矽化物等，其可為PbSn、AuGe、AuBe、AuSi、Sn、In、PdIn。三、形成第一連接層100的材料可為BCB、Epoxy、SOG、SU8等高分子材料，或為氧化物如TiO2、Ti2O5、Ta2O3、Ta2O5、ITO、AZO、ZnO及Al2O3，或氮化物如SiONx、SiNx、GaN、AlN，或diamond；其餘部分相同，不再重複敘述。如第13(a)圖所示，先將第一成長基板(圖未示)移除以裸露出第一電性半導體層20上表面，再以蝕刻方式形成一規則或不規則的粗糙表面。從第一電性半導體層20起由上往下蝕刻活性層30至裸露出部份第二電性半導體層40表面a；再從第一電性半導體層20起由上往下蝕刻活性層30、第二電性半導體層40、第二連接層50、保護層70至裸露出附著層80之上表面b為止。於第二電性半導體層40之表面a上形成一電極A與第二電性半導體層40電性連接；再於活性層30、第二電性半導體層40、第二連接層50、保護層70的側壁形成一導電結構130，再形成一電極B覆蓋導電結構130，即形成發光二極體14。其中保護層70其電性與第二電性半導體層40相異，可以形成一具防止靜電放電(Electric Static Discharge,ESD)二極體特性的疊層C。再與其上由第一電性半導體層20、活性層30、第二電性半導體層40所形成的二極體疊層結構D，藉由導電結構130形成反向並聯之電性連接，如第13(b)圖所示。如第13(c)圖所示，當正向電流的電流方向I由A電極流向B電極時，電流依序經過第二電性半導體層40、活性層30、第一電性半導體層20所形成的二極體疊層結構D，發光二極體14得以正常操作。如第13(d)圖所示，當逆向電流的電流方向I由B電極流向A電極時，電流依序經過附著層80及保護層70、第二連接層50、第二電性半導體層40所形成防止靜電放電二極體特性的疊層C，電流不會經過發光二極體14的活性層30，因而形成一不會被逆向電流擊穿之元件結構。故由保護層70、第二連接層50與第二電性半導體層40形成之防止靜電放電二極體特性的疊層C具有防止ESD二極體的功能。
上述之諸實施例，其中，所述之成長基板例如為包括至少一種材料選自於碳化矽、氮化鎵、以及氮化鋁所組成之群組。所述之第一電性半導體層、活性層以及第二電性半導體層可為單層或多層結構，例如為超晶格結構。另外，本發明之所述之磊晶結構並不限於以磊晶方式成長所述之成長基板之上，其他形成方式，例如以接合方式直接接合或藉由一介質接合至一散熱基板亦屬本發明之範圍。
雖然本發明已以較佳實施例揭示如上，然其並非用以限定本發明，任何本發明所屬技術領域中具有通常知 識者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
1、2‧‧‧磊晶結構
10‧‧‧第一成長基板
11‧‧‧發光元件
12‧‧‧發光裝置
13‧‧‧微晶粒
14‧‧‧發光二極體
15、25、A、B、35、45‧‧‧電極
20‧‧‧第一電性半導體層
30‧‧‧活性層
40‧‧‧第二電性半導體層
50‧‧‧第二連接層
60‧‧‧第二成長基板
70‧‧‧保護層
80‧‧‧附著層
90‧‧‧反射層
100‧‧‧第一連接層
100A‧‧‧第三連接層
100B‧‧‧第四連接層
110‧‧‧散熱基板
120‧‧‧隔絕層
130‧‧‧導電結構
140‧‧‧開口
a‧‧‧表面
b‧‧‧上表面
C‧‧‧防止靜電放電二極體特性的疊層
D‧‧‧二極體疊層結構
I‧‧‧電流方向
本發明的較佳實施例將於實施方式之說明文字中輔以下列圖形做更詳細的說明：第1-7圖描述本發明實施例一之半導體元件結構的示意圖。
第8-12圖描述本發明實施例二之半導體元件結構的示意圖。
第13(a)-13(d)圖描述本發明實施例三之半導體元件結構的示意圖。
11‧‧‧發光元件
15、25‧‧‧電極
20‧‧‧第一電性半導體層
30‧‧‧活性層
40‧‧‧第二電性半導體層
50‧‧‧第二連接層
70‧‧‧保護層
80‧‧‧附著層
90‧‧‧反射層
100‧‧‧第一連接層
110‧‧‧散熱基板

Claims (10)

  1. 一種發光元件，至少包含：一散熱基板；一保護層位於該散熱基板之上，其中該保護層具有高絕緣性以避免該發光單元與該散熱基板之間形成漏電路徑；一第一連接層接合該散熱基板與該保護層；一發光單元包含一磊晶結構；以及一第二連接層接合該保護層與該發光單元，其中該磊晶結構係預先成長於一成長基板上，並於該第一連接層接合該散熱基板與該保護層後移除該成長基板使該發光元件不具有該成長基板。
  2. 如申請專利範圍第1項所述之發光元件，其更包含一反射層位於該第一連接層與該保護層之間。
  3. 如申請專利範圍第2項所述之發光元件，其更包含一附著層位於該反射層與該保護層之間。
  4. 如申請專利範圍第1項所述之發光元件，其中該磊晶結構至少包含一第一電性半導體層、一第二電性半導體層、以及一活性層介於該第一電性半導體層及該第二電性半導體層之間。
  5. 如申請專利範圍第1項所述之發光元件，其中該保護層為無掺雜雜質之氮化鎵或無掺雜雜質之III-V族材料所組成。
  6. 如申請專利範圍第3項所述之發光元件，其中該附著層為氧化銦錫或氧化鋅所組成。
  7. 如申請專利範圍第1項所述之發光元件，其中該第一連接層包含焊錫、低溫金屬、或金屬矽化物。
  8. 如申請專利範圍第1項所述之發光元件，其中該發光單元具有至少二微晶粒，且該發光元件更包含一導電結構電性連接該些微晶粒。
  9. 如申請專利範圍第1項所述之發光元件，其中該第二連接層之材料包含高分子材料、氧化物或氮化物。
  10. 如申請專利範圍第1項所述之發光元件，其中該保護層係預先成長於一第二成長基板上，並於該第二連接層接合該保護層與該發光單元後移除該第二成長基板使該發光元件不具有該第二成長基板。
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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI499099B (zh) 2009-12-30 2015-09-01 Epistar Corp 具有保護層之半導體發光元件
US9269870B2 (en) 2011-03-17 2016-02-23 Epistar Corporation Light-emitting device with intermediate layer
US9276164B2 (en) * 2012-11-26 2016-03-01 Epistar Corporation Optoelectronic device and method for manufacturing the same
US9368707B2 (en) * 2012-11-27 2016-06-14 Citizen Electronics Co., Ltd. Mounting substrate and light-emitting device using the same
US11329195B2 (en) 2013-08-27 2022-05-10 Epistar Corporation Semiconductor light-emitting device
CN105244426A (zh) * 2015-10-27 2016-01-13 天津三安光电有限公司 一种防止逆向电压击穿发光二极管的结构与制作方法
CN106898706A (zh) * 2017-02-24 2017-06-27 深圳市华星光电技术有限公司 发光二极管显示器及其制作方法
TWI640075B (zh) * 2017-10-31 2018-11-01 友達光電股份有限公司 像素發光裝置
CN109585612B (zh) * 2018-11-30 2019-11-19 湘能华磊光电股份有限公司 提升发光效率的led外延生长方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200514283A (en) * 2003-09-16 2005-04-16 Toyoda Gosei Kk Group III-nitride-based compound semiconductor device
TW200603429A (en) * 2004-07-07 2006-01-16 Epistar Corp Light emitting diode having an adhesive layer and heat paths
TW200717846A (en) * 2005-10-20 2007-05-01 Epistar Corp Light emitting device and method of forming the same
WO2008054994A2 (en) * 2006-10-18 2008-05-08 Nitek, Inc. Deep ultraviolet light emitting device and method for fabricating same
US20080296627A1 (en) * 2007-05-30 2008-12-04 Nichia Corporation Nitride semiconductor device and method of manufacturing the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1658642B1 (en) * 2003-08-28 2014-02-26 Panasonic Corporation Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
CN2745220Y (zh) 2004-05-09 2005-12-07 王亚盛 大功率多管芯集成led模块
CN101226973B (zh) 2007-01-17 2011-10-12 晶元光电股份有限公司 高效率发光二极管及其制造方法
JP5310371B2 (ja) * 2009-08-10 2013-10-09 ソニー株式会社 半導体発光素子及びその製造方法
TWI499099B (zh) * 2009-12-30 2015-09-01 Epistar Corp 具有保護層之半導體發光元件

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200514283A (en) * 2003-09-16 2005-04-16 Toyoda Gosei Kk Group III-nitride-based compound semiconductor device
TW200603429A (en) * 2004-07-07 2006-01-16 Epistar Corp Light emitting diode having an adhesive layer and heat paths
TW200717846A (en) * 2005-10-20 2007-05-01 Epistar Corp Light emitting device and method of forming the same
WO2008054994A2 (en) * 2006-10-18 2008-05-08 Nitek, Inc. Deep ultraviolet light emitting device and method for fabricating same
US20080296627A1 (en) * 2007-05-30 2008-12-04 Nichia Corporation Nitride semiconductor device and method of manufacturing the same

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