JP5496889B2 - 発光素子パッケージ及びその製造方法 - Google Patents
発光素子パッケージ及びその製造方法 Download PDFInfo
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- JP5496889B2 JP5496889B2 JP2010522793A JP2010522793A JP5496889B2 JP 5496889 B2 JP5496889 B2 JP 5496889B2 JP 2010522793 A JP2010522793 A JP 2010522793A JP 2010522793 A JP2010522793 A JP 2010522793A JP 5496889 B2 JP5496889 B2 JP 5496889B2
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- light emitting
- filler
- emitting device
- substrate
- pattern
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000000945 filler Substances 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 38
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 25
- 238000000605 extraction Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 39
- 239000000463 material Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 235000012773 waffles Nutrition 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
11 装着部
12 貫通ホール
13 電極層
20 発光素子
30 充填材
31 充填材パターン
40 感光膜
41 感光膜パターン
70 接着層
80 蛍光体層
81 蛍光体層パターン
Claims (6)
- 基板と、
前記基板の上に電極層と、
前記基板の上に設置され、前記電極層と電気的に連結される発光素子と、
前記発光素子を取囲み、凹凸パターンを含む充填材と、
前記充填材の凹凸パターンの凸部上のみに配置された感光膜と、を含み、
前記基板は上面に溝が形成され、
前記発光素子は前記溝内に設置され、
前記電極層は前記溝から前記基板の背面まで延長される発光素子パッケージ。 - 前記感光膜は、屈折率が1.1〜2.2であることを特徴とする請求項1に記載の発光素子パッケージ。
- 前記充填材は蛍光体を含むことを特徴とする請求項1又は2に記載の発光素子パッケージ。
- 前記充填材の凹凸パターンの周期または深さは1000Å〜100μmであることを特徴とする請求項1〜3のいずれかに記載の発光素子パッケージ。
- 基板を準備する段階と、
前記基板の上に電極層を形成する段階と、
前記基板の上に発光素子を設置し、前記電極層と電気的に連結させる段階と、
前記発光素子を充填材によって取囲む段階と、
前記充填材の上に光抽出パターンを形成する段階と、を含み、
前記光抽出パターンを形成する段階は、前記充填材の上面を選択的に除去してパターンを形成する段階が含まれ、
前記光抽出パターンを形成する段階は、前記充填材の上に感光膜パターンを形成する段階が含まれ、
前記基板は上面に溝が形成され、
前記発光素子は前記溝内に設置され、
前記電極層は前記溝から前記基板の背面まで延長され、
前記充填材は、凸部と凹部とを含む凹凸パターンを含み、前記感光膜パターンは前記充填材の凸部上のみに設置される
発光素子パッケージの製造方法。 - 前記感光膜パターンは、屈折率が1.1〜2.2の感光膜からなることを特徴とする請求項5に記載の発光素子パッケージの製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070086114A KR101383357B1 (ko) | 2007-08-27 | 2007-08-27 | 발광 소자 패키지 및 그 제조방법 |
KR10-2007-0086114 | 2007-08-27 | ||
PCT/KR2008/004595 WO2009028807A2 (en) | 2007-08-27 | 2008-08-07 | Light emitting device package and method for fabricating the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010538450A JP2010538450A (ja) | 2010-12-09 |
JP5496889B2 true JP5496889B2 (ja) | 2014-05-21 |
Family
ID=40387990
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010522793A Active JP5496889B2 (ja) | 2007-08-27 | 2008-08-07 | 発光素子パッケージ及びその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8624280B2 (ja) |
EP (1) | EP2188848B1 (ja) |
JP (1) | JP5496889B2 (ja) |
KR (1) | KR101383357B1 (ja) |
CN (1) | CN101785122B (ja) |
WO (1) | WO2009028807A2 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011155060A (ja) * | 2010-01-26 | 2011-08-11 | Citizen Holdings Co Ltd | 発光デバイス |
KR100986571B1 (ko) * | 2010-02-04 | 2010-10-07 | 엘지이노텍 주식회사 | 발광소자 패키지 및 그 제조방법 |
KR100969100B1 (ko) | 2010-02-12 | 2010-07-09 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법 및 발광소자 패키지 |
KR101637581B1 (ko) * | 2010-03-09 | 2016-07-07 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 그 제조방법 |
CN103180945B (zh) * | 2010-10-27 | 2016-12-07 | 皇家飞利浦电子股份有限公司 | 用于制造发光器件的层压支撑膜及其制造方法 |
US8860056B2 (en) | 2011-12-01 | 2014-10-14 | Tsmc Solid State Lighting Ltd. | Structure and method for LED with phosphor coating |
JP2015111626A (ja) * | 2013-12-06 | 2015-06-18 | シャープ株式会社 | 発光装置およびその製造方法 |
CN105226198A (zh) * | 2015-10-13 | 2016-01-06 | 京东方科技集团股份有限公司 | 一种防水增透型柔性oled器件装置及其制备方法 |
US9508664B1 (en) * | 2015-12-16 | 2016-11-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device structure comprising a plurality of metal oxide fibers and method for forming the same |
CN109081846A (zh) * | 2018-10-08 | 2018-12-25 | 浙江工业大学上虞研究院有限公司 | 4-氨基噻吩[2,3-b]吡啶类化合物的制备方法 |
JP7037070B2 (ja) * | 2019-01-11 | 2022-03-16 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP7260828B2 (ja) * | 2019-01-11 | 2023-04-19 | 日亜化学工業株式会社 | 発光装置 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2924961B1 (ja) | 1998-01-16 | 1999-07-26 | サンケン電気株式会社 | 半導体発光装置及びその製法 |
US6686676B2 (en) * | 2001-04-30 | 2004-02-03 | General Electric Company | UV reflectors and UV-based light sources having reduced UV radiation leakage incorporating the same |
JP2002366289A (ja) | 2001-06-06 | 2002-12-20 | Kyocera Corp | 携帯端末、及びその文字変換方法 |
JP4734770B2 (ja) * | 2001-06-12 | 2011-07-27 | ソニー株式会社 | 樹脂形成素子の製造方法、画像表示装置の製造方法、および照明装置の製造方法 |
JP4122738B2 (ja) * | 2001-07-26 | 2008-07-23 | 松下電工株式会社 | 発光装置の製造方法 |
JP2003234509A (ja) * | 2002-02-08 | 2003-08-22 | Citizen Electronics Co Ltd | 発光ダイオード |
JP4241184B2 (ja) | 2002-07-25 | 2009-03-18 | パナソニック電工株式会社 | 光電素子部品 |
KR100550750B1 (ko) | 2003-07-25 | 2006-02-08 | 엘지이노텍 주식회사 | 발광 다이오드 패키지 및 그 제조방법 |
JP4475501B2 (ja) * | 2003-10-09 | 2010-06-09 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 分光素子、回折格子、複合回折格子、カラー表示装置、および分波器 |
JP2005166941A (ja) * | 2003-12-02 | 2005-06-23 | Matsushita Electric Ind Co Ltd | 発光装置およびその製造方法、並びにその発光装置を用いた照明モジュールと照明装置 |
TWI229751B (en) * | 2003-12-26 | 2005-03-21 | Ind Tech Res Inst | Adjustable filter and manufacturing method thereof |
JP2005209795A (ja) | 2004-01-21 | 2005-08-04 | Koito Mfg Co Ltd | 発光モジュール及び灯具 |
KR100586973B1 (ko) | 2004-06-29 | 2006-06-08 | 삼성전기주식회사 | 돌기부가 형성된 기판을 구비한 질화물 반도체 발광소자 |
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JP2006164808A (ja) * | 2004-12-09 | 2006-06-22 | Hitachi Ltd | 発光素子,照明装置及びこれを有する表示装置 |
JP2006237264A (ja) | 2005-02-24 | 2006-09-07 | Kyocera Corp | 発光装置および照明装置 |
US20060189013A1 (en) * | 2005-02-24 | 2006-08-24 | 3M Innovative Properties Company | Method of making LED encapsulant with undulating surface |
JP2006286701A (ja) * | 2005-03-31 | 2006-10-19 | Mitsubishi Electric Corp | 半導体発光装置 |
US7754507B2 (en) | 2005-06-09 | 2010-07-13 | Philips Lumileds Lighting Company, Llc | Method of removing the growth substrate of a semiconductor light emitting device |
KR100631992B1 (ko) | 2005-07-19 | 2006-10-09 | 삼성전기주식회사 | 측면 방출형 이중 렌즈 구조 led 패키지 |
KR101181112B1 (ko) | 2005-10-27 | 2012-09-14 | 엘지이노텍 주식회사 | 발광 다이오드, 발광 다이오드 제조 방법 및 발광 다이오드 모듈 |
KR100703216B1 (ko) * | 2006-02-21 | 2007-04-09 | 삼성전기주식회사 | 발광다이오드 패키지의 제조 방법 |
EP2087563B1 (en) * | 2006-11-15 | 2014-09-24 | The Regents of The University of California | Textured phosphor conversion layer light emitting diode |
KR20090002835A (ko) * | 2007-07-04 | 2009-01-09 | 엘지전자 주식회사 | 질화물계 발광 소자 및 그 제조방법 |
-
2007
- 2007-08-27 KR KR1020070086114A patent/KR101383357B1/ko active IP Right Grant
-
2008
- 2008-08-07 WO PCT/KR2008/004595 patent/WO2009028807A2/en active Application Filing
- 2008-08-07 US US12/674,315 patent/US8624280B2/en active Active
- 2008-08-07 EP EP08793109.3A patent/EP2188848B1/en active Active
- 2008-08-07 JP JP2010522793A patent/JP5496889B2/ja active Active
- 2008-08-07 CN CN2008801043346A patent/CN101785122B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US20110215353A1 (en) | 2011-09-08 |
CN101785122A (zh) | 2010-07-21 |
KR20090021531A (ko) | 2009-03-04 |
EP2188848A4 (en) | 2015-04-15 |
WO2009028807A2 (en) | 2009-03-05 |
CN101785122B (zh) | 2012-02-29 |
WO2009028807A3 (en) | 2009-04-23 |
US8624280B2 (en) | 2014-01-07 |
EP2188848B1 (en) | 2019-05-15 |
JP2010538450A (ja) | 2010-12-09 |
KR101383357B1 (ko) | 2014-04-10 |
EP2188848A2 (en) | 2010-05-26 |
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