JP4238666B2 - 発光装置の製造方法 - Google Patents
発光装置の製造方法 Download PDFInfo
- Publication number
- JP4238666B2 JP4238666B2 JP2003276099A JP2003276099A JP4238666B2 JP 4238666 B2 JP4238666 B2 JP 4238666B2 JP 2003276099 A JP2003276099 A JP 2003276099A JP 2003276099 A JP2003276099 A JP 2003276099A JP 4238666 B2 JP4238666 B2 JP 4238666B2
- Authority
- JP
- Japan
- Prior art keywords
- glass
- light
- led element
- light emitting
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
(1)封止材料であるガラスの粘度が樹脂と比較して大であるため、LED素子の封止時に気泡を巻き込み易く、また、一旦巻き込んだ気泡を分離しにくいことからガラス層に残留気泡が生じてしまうという問題がある。
(2)LED素子のガラス封止に300℃を超える加工温度を伴うことにより、LED素子との熱膨張率の差に基づく応力や、封止加工に起因する加工後の材料内部残留応力が生じるため、ヒートショック等によってガラスにクラックが生じ易くなるという問題がある。
前記発光素子が搭載された前記配線導体に板状のガラスを配置し、
前記板状のガラスを、加熱プレスにより軟化させて成形しながら、前記発光素子の前記斜辺部を含む表面及び前記配線導体の表面に密着させて、前記発光素子を封止することを特徴とする発光装置の製造方法を提供する。
このような波長変換部8は、以下のように形成する。
(1)蛍光体層形成工程
まず、低融点ガラスからなるガラスシートを用意する。このガラスシートは、長尺方向に複数のLED素子3を配置することが可能な長さを有して形成されていることが好ましい。次に、増粘材として約1%のニトロセルロースを含むn−酢酸ブチルに蛍光体800を溶解した蛍光体溶液を作成し、この溶液をガラスシートの表面にLED素子3の配置間隔に応じたピッチでスクリーン印刷して薄膜状に付着させる。次に、蛍光体溶液を印刷されたガラスシートを加熱処理して溶剤分を除去することにより蛍光体層8Cを形成する。なお、加熱処理を減圧雰囲気中で行うことがより好ましい。
(2)複合ガラス形成工程
次に、Er3+を含有する蛍光錯体ガラスシートを用意し、蛍光体層形成工程で作製した蛍光体層8Cを挟み込むようにして配置する。なお、蛍光体層8Cを有するガラスシートおよび蛍光錯体ガラスシートは同一の形状であることが好ましいが、異なる形状を有していても良い。次に、蛍光体層8Cを有するガラスシートおよび蛍光錯体ガラスシートを減圧雰囲気中で加熱プレスすることによって熱融着させる。蛍光体層8Cは、熱融着された2枚のガラスシートの境界部分に位置するように層状に設けられる。
3、LED素子 4、サブマウント素子 5、リードフレーム
5A、段部 6、ガラス封止部 8、波長変換部 8A、ガラス封止部
8B、ガラス封止部 8C、蛍光体層 9、セラミック基板
30、基板 31、発光層 32、斜辺部 33、曲面部
40、配線パターン 41、配線パターン 42、スルーホール
50、発光装置 51、配線導体 52、配線導体 53、カップ
53A、底部 54、素子 55、ワイヤ 56、ガラス層
56A、蛍光物質 57、封止樹脂 800、蛍光体
801、蛍光錯体
Claims (4)
- 上面側の角部をカットした形状の斜辺部を有するフリップチップ型の発光素子の電極を、上面が平坦な配線導体に電気的に接合し、
前記発光素子が搭載された前記配線導体に板状のガラスを配置し、
前記板状のガラスを、加熱プレスにより軟化させて成形しながら、前記発光素子の前記斜辺部を含む表面及び前記配線導体の表面に密着させて、前記発光素子を封止することを特徴とする発光装置の製造方法。 - 前記発光素子は、側面側の角部がカットされていることを特徴とする請求項1に記載の発光装置の製造方法。
- 前記ガラスは、前記加熱プレスにより、10 8 〜10 10 ポイズ程度に軟化することを特徴とする請求項1または2に記載の発光装置の製造方法。
- 前記加熱プレスにおいて、前記ガラスを300℃を超える温度で加熱することを特徴とする請求項1から3のいずれか1項に記載の発光装置の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003276099A JP4238666B2 (ja) | 2003-07-17 | 2003-07-17 | 発光装置の製造方法 |
DE102004063978.7A DE102004063978B4 (de) | 2003-07-17 | 2004-07-15 | Lichtemittierende Vorrichtung |
DE102004034166.4A DE102004034166B4 (de) | 2003-07-17 | 2004-07-15 | Lichtemittierende Vorrichtung |
US10/891,422 US7391153B2 (en) | 2003-07-17 | 2004-07-15 | Light emitting device provided with a submount assembly for improved thermal dissipation |
CNB2004100712619A CN100472820C (zh) | 2003-07-17 | 2004-07-16 | 发光器件 |
CN2009100096747A CN101476710B (zh) | 2003-07-17 | 2004-07-16 | 发光器件及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003276099A JP4238666B2 (ja) | 2003-07-17 | 2003-07-17 | 発光装置の製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005039122A JP2005039122A (ja) | 2005-02-10 |
JP2005039122A5 JP2005039122A5 (ja) | 2007-06-07 |
JP4238666B2 true JP4238666B2 (ja) | 2009-03-18 |
Family
ID=34212528
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003276099A Expired - Fee Related JP4238666B2 (ja) | 2003-07-17 | 2003-07-17 | 発光装置の製造方法 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP4238666B2 (ja) |
CN (1) | CN101476710B (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006112417A1 (ja) * | 2005-04-15 | 2006-10-26 | Asahi Glass Company, Limited | ガラス封止発光素子、ガラス封止発光素子付き回路基板およびそれらの製造方法 |
JP4604819B2 (ja) * | 2005-04-28 | 2011-01-05 | 豊田合成株式会社 | 発光装置 |
JP2007201354A (ja) * | 2006-01-30 | 2007-08-09 | Matsushita Electric Ind Co Ltd | 発光モジュール |
JP2007258466A (ja) * | 2006-03-23 | 2007-10-04 | Sumita Optical Glass Inc | 照明装置及び発光装置 |
DE102008021436A1 (de) * | 2008-04-29 | 2010-05-20 | Schott Ag | Optik-Konverter-System für (W)LEDs |
BRPI0913195A2 (pt) * | 2008-05-30 | 2016-01-12 | Sharp Kk | dispostivo emissor de luz, fonte de luz de superfície, dispositivo de vídeo de cristal líquido e método para a fabricação de dispositivo emissor de luz |
WO2011007816A1 (ja) * | 2009-07-15 | 2011-01-20 | 三菱化学株式会社 | 半導体発光素子、半導体発光装置、半導体発光素子の製造方法、および半導体発光装置の製造方法 |
JP2013077798A (ja) * | 2011-09-14 | 2013-04-25 | Toyoda Gosei Co Ltd | ガラス封止ledランプ及びその製造方法 |
JP5880025B2 (ja) * | 2011-12-26 | 2016-03-08 | 日亜化学工業株式会社 | 発光装置 |
KR102059030B1 (ko) * | 2012-09-24 | 2019-12-24 | 엘지이노텍 주식회사 | 자외선 발광 소자 |
JP2015079929A (ja) * | 2013-09-11 | 2015-04-23 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
JP6477734B2 (ja) * | 2016-06-30 | 2019-03-06 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
CN110118312A (zh) * | 2018-02-07 | 2019-08-13 | 深圳光峰科技股份有限公司 | 波长转换装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5995652U (ja) * | 1982-12-18 | 1984-06-28 | 株式会社東芝 | 発光素子 |
EP0405757A3 (en) * | 1989-06-27 | 1991-01-30 | Hewlett-Packard Company | High efficiency light-emitting diode |
JP2979961B2 (ja) * | 1994-06-14 | 1999-11-22 | 日亜化学工業株式会社 | フルカラーledディスプレイ |
EP0720243A3 (en) * | 1994-12-27 | 1998-07-01 | Fujitsu Limited | Method of fabricating compound semiconductor device and optical semiconductor device |
CN1264228C (zh) * | 1996-06-26 | 2006-07-12 | 奥斯兰姆奥普托半导体股份有限两合公司 | 发光半导体器件、全色发光二极管显示装置及其应用 |
JPH1140871A (ja) * | 1997-07-22 | 1999-02-12 | Mitsubishi Chem Corp | 光電変換素子 |
JP2861991B2 (ja) * | 1997-10-20 | 1999-02-24 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体チップの製造方法 |
JP3449201B2 (ja) * | 1997-11-28 | 2003-09-22 | 日亜化学工業株式会社 | 窒化物半導体素子の製造方法 |
JP3707279B2 (ja) * | 1998-03-02 | 2005-10-19 | 松下電器産業株式会社 | 半導体発光装置 |
JP3337000B2 (ja) * | 1999-06-07 | 2002-10-21 | サンケン電気株式会社 | 半導体発光装置 |
JP2001144331A (ja) * | 1999-09-02 | 2001-05-25 | Toyoda Gosei Co Ltd | 発光装置 |
JP2001185757A (ja) * | 1999-12-27 | 2001-07-06 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
JP3989794B2 (ja) * | 2001-08-09 | 2007-10-10 | 松下電器産業株式会社 | Led照明装置およびled照明光源 |
JP2003147346A (ja) * | 2001-11-15 | 2003-05-21 | Kansai Tlo Kk | 希土類錯体を用いた光機能材料及び発光装置 |
JP2003188410A (ja) * | 2001-12-19 | 2003-07-04 | Daido Steel Co Ltd | 発光ダイオードチップ |
-
2003
- 2003-07-17 JP JP2003276099A patent/JP4238666B2/ja not_active Expired - Fee Related
-
2004
- 2004-07-16 CN CN2009100096747A patent/CN101476710B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN101476710B (zh) | 2011-01-05 |
CN101476710A (zh) | 2009-07-08 |
JP2005039122A (ja) | 2005-02-10 |
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