CN100565000C - 利用yag透明陶瓷制备白光led的方法 - Google Patents
利用yag透明陶瓷制备白光led的方法 Download PDFInfo
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- CN100565000C CN100565000C CNB2008101387919A CN200810138791A CN100565000C CN 100565000 C CN100565000 C CN 100565000C CN B2008101387919 A CNB2008101387919 A CN B2008101387919A CN 200810138791 A CN200810138791 A CN 200810138791A CN 100565000 C CN100565000 C CN 100565000C
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- yag
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- crystalline ceramics
- epoxy resin
- ceramic layer
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CNB2008101387919A CN100565000C (zh) | 2008-08-11 | 2008-08-11 | 利用yag透明陶瓷制备白光led的方法 |
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CNB2008101387919A CN100565000C (zh) | 2008-08-11 | 2008-08-11 | 利用yag透明陶瓷制备白光led的方法 |
Publications (2)
Publication Number | Publication Date |
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CN101338879A CN101338879A (zh) | 2009-01-07 |
CN100565000C true CN100565000C (zh) | 2009-12-02 |
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CNB2008101387919A Expired - Fee Related CN100565000C (zh) | 2008-08-11 | 2008-08-11 | 利用yag透明陶瓷制备白光led的方法 |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101988636A (zh) * | 2009-07-31 | 2011-03-23 | 歌尔声学股份有限公司 | 一种白光led及其制备方法 |
CN101931040A (zh) * | 2010-07-20 | 2010-12-29 | 嘉兴嘉尼光电科技有限公司 | Led面光源封装 |
CN102130108A (zh) * | 2010-12-14 | 2011-07-20 | 黄金鹿 | 一种透明陶瓷封装的led光源 |
CN103443941A (zh) * | 2011-03-31 | 2013-12-11 | 松下电器产业株式会社 | 半导体发光装置 |
CN102249660B (zh) * | 2011-04-22 | 2013-05-08 | 中国科学院上海光学精密机械研究所 | GaInN白光LED用复合结构荧光陶瓷及其制备方法 |
WO2014062871A1 (en) * | 2012-10-19 | 2014-04-24 | Osram Sylvania Inc. | Index matched composite materials and light sources incorporating the same |
CN109336582A (zh) * | 2018-09-30 | 2019-02-15 | 汪阳 | 一种用于白光led的复合结构荧光陶瓷及其制备方法 |
CN114361315A (zh) * | 2020-10-13 | 2022-04-15 | 福建中科芯源光电科技有限公司 | 一种无机材料封装的白光led芯片、器件及其制备方法与应用 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1207206A (zh) * | 1996-09-20 | 1999-02-03 | 西门子公司 | 波长变换浇注材料、它的应用及其制造方法 |
CN1228873A (zh) * | 1996-06-26 | 1999-09-15 | 西门子公司 | 具有发光变换元件的发光半导体器件 |
CN1398817A (zh) * | 2002-08-28 | 2003-02-26 | 中国科学院上海硅酸盐研究所 | 离子掺杂的钇铝石榴石纳米粉体的制备方法 |
US6630691B1 (en) * | 1999-09-27 | 2003-10-07 | Lumileds Lighting U.S., Llc | Light emitting diode device comprising a luminescent substrate that performs phosphor conversion |
CN1815765A (zh) * | 2005-12-19 | 2006-08-09 | 中山大学 | 一种yag晶片式白光发光二极管及其封装方法 |
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2008
- 2008-08-11 CN CNB2008101387919A patent/CN100565000C/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1228873A (zh) * | 1996-06-26 | 1999-09-15 | 西门子公司 | 具有发光变换元件的发光半导体器件 |
CN1207206A (zh) * | 1996-09-20 | 1999-02-03 | 西门子公司 | 波长变换浇注材料、它的应用及其制造方法 |
US6630691B1 (en) * | 1999-09-27 | 2003-10-07 | Lumileds Lighting U.S., Llc | Light emitting diode device comprising a luminescent substrate that performs phosphor conversion |
CN1398817A (zh) * | 2002-08-28 | 2003-02-26 | 中国科学院上海硅酸盐研究所 | 离子掺杂的钇铝石榴石纳米粉体的制备方法 |
CN1815765A (zh) * | 2005-12-19 | 2006-08-09 | 中山大学 | 一种yag晶片式白光发光二极管及其封装方法 |
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Publication number | Publication date |
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CN101338879A (zh) | 2009-01-07 |
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Owner name: SHANDONG INSPUR HUAGUANG OPTOELECTRONICS CO., LTD. Free format text: FORMER OWNER: SHANDONG HUAGUANG PHOTOELECTRONIC CO., LTD. Effective date: 20111212 |
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Effective date of registration: 20111212 Address after: 261061 Weifang high tech Zone, Jin Road, No. 9, No. Patentee after: Shandong Inspur Huaguang Optoelectronics Co., Ltd. Address before: Tianchen Avenue high tech Zone of Ji'nan City, Shandong Province, No. 1835 250101 Patentee before: Shandong Huaguang Photoelectronic Co., Ltd. |
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