CN1815765A - 一种yag晶片式白光发光二极管及其封装方法 - Google Patents
一种yag晶片式白光发光二极管及其封装方法 Download PDFInfo
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- CN1815765A CN1815765A CNA2005101023887A CN200510102388A CN1815765A CN 1815765 A CN1815765 A CN 1815765A CN A2005101023887 A CNA2005101023887 A CN A2005101023887A CN 200510102388 A CN200510102388 A CN 200510102388A CN 1815765 A CN1815765 A CN 1815765A
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- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000012856 packing Methods 0.000 title claims description 6
- 239000013078 crystal Substances 0.000 claims abstract description 106
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 229920005989 resin Polymers 0.000 claims abstract description 7
- 239000011347 resin Substances 0.000 claims abstract description 7
- 239000002223 garnet Substances 0.000 claims description 40
- SMKQIOCKGHFKQZ-UHFFFAOYSA-N phosphanylidynecerium Chemical compound [Ce]#P SMKQIOCKGHFKQZ-UHFFFAOYSA-N 0.000 claims description 40
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 27
- 239000000203 mixture Substances 0.000 claims description 16
- 239000004033 plastic Substances 0.000 claims description 12
- 229920003023 plastic Polymers 0.000 claims description 12
- 238000005498 polishing Methods 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 239000000741 silica gel Substances 0.000 claims description 3
- 229910002027 silica gel Inorganic materials 0.000 claims description 3
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- 229910052771 Terbium Inorganic materials 0.000 claims description 2
- 239000000843 powder Substances 0.000 abstract description 5
- 229920001296 polysiloxane Polymers 0.000 abstract description 2
- 239000000565 sealant Substances 0.000 abstract description 2
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 16
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 11
- 238000005538 encapsulation Methods 0.000 description 10
- 238000005520 cutting process Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 239000000084 colloidal system Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052741 iridium Inorganic materials 0.000 description 6
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 6
- 238000005303 weighing Methods 0.000 description 6
- 238000012958 reprocessing Methods 0.000 description 5
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 241001025261 Neoraja caerulea Species 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 3
- 239000000975 dye Substances 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000009955 starching Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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Abstract
Description
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Priority Applications (1)
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CNB2005101023887A CN100389504C (zh) | 2005-12-19 | 2005-12-19 | 一种yag晶片式白光发光二极管及其封装方法 |
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CNB2005101023887A CN100389504C (zh) | 2005-12-19 | 2005-12-19 | 一种yag晶片式白光发光二极管及其封装方法 |
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CN1815765A true CN1815765A (zh) | 2006-08-09 |
CN100389504C CN100389504C (zh) | 2008-05-21 |
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Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100565000C (zh) * | 2008-08-11 | 2009-12-02 | 山东华光光电子有限公司 | 利用yag透明陶瓷制备白光led的方法 |
CN101872831A (zh) * | 2010-05-26 | 2010-10-27 | 上海嘉利莱实业有限公司 | 一种适用于白光led的单晶荧光材料 |
CN101894900A (zh) * | 2010-06-25 | 2010-11-24 | 北京工业大学 | 一种将单晶体用于白光led的制作方法 |
CN102097337A (zh) * | 2009-10-22 | 2011-06-15 | 英飞凌科技股份有限公司 | 使用重组晶圆的半导体器件制造的方法和设备 |
CN102140690A (zh) * | 2010-12-31 | 2011-08-03 | 陈哲艮 | 光致发光晶片及其制备方法和应用 |
CN102154010A (zh) * | 2011-01-29 | 2011-08-17 | 陈哲艮 | 光增强光致发光材料及其制备方法和应用 |
CN102891245A (zh) * | 2012-09-17 | 2013-01-23 | 温州大学 | 将荧光晶片用于大功率白光led的封装结构及其封装方法 |
CN102903831A (zh) * | 2012-05-15 | 2013-01-30 | 北京工业大学 | 一种白光led的结构及制备工艺 |
EP2634234A1 (en) * | 2010-10-29 | 2013-09-04 | National Institute for Materials Science | Light-emitting device |
CN103943755A (zh) * | 2014-03-20 | 2014-07-23 | 昆山开威电子有限公司 | 一种白光led封装结构及封装方法 |
CN104245883A (zh) * | 2012-04-24 | 2014-12-24 | 株式会社光波 | 荧光体及其制造方法以及发光装置 |
CN105189698A (zh) * | 2013-04-22 | 2015-12-23 | 克莱托斯波尔公司 | 具有单晶磷光体的白光发光二极管和生产的方法 |
US20170009135A1 (en) * | 2014-02-27 | 2017-01-12 | Kunshan Kaiwei Electronic Co., Ltd. | Composite structure based on ce: yag wafer, and manufacturing method thereof |
US9580650B1 (en) | 2014-12-25 | 2017-02-28 | DM Lighting Technologies Inc. | Method of manufacturing Ce:YAG polycrystalline phosphor |
CN107940267A (zh) * | 2016-10-13 | 2018-04-20 | 广州达森灯光股份有限公司 | 基于陶瓷转换激光光源的摇头灯 |
CN107940251A (zh) * | 2016-10-13 | 2018-04-20 | 广州达森灯光股份有限公司 | 基于单晶转换激光光源的摇头灯 |
CN112310264A (zh) * | 2019-07-31 | 2021-02-02 | 台湾应用晶体股份有限公司 | 发光装置及其制造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6630691B1 (en) * | 1999-09-27 | 2003-10-07 | Lumileds Lighting U.S., Llc | Light emitting diode device comprising a luminescent substrate that performs phosphor conversion |
US20050006659A1 (en) * | 2003-07-09 | 2005-01-13 | Ng Kee Yean | Light emitting diode utilizing a discrete wavelength-converting layer for color conversion |
JP4153455B2 (ja) * | 2003-11-28 | 2008-09-24 | 学校法人 名城大学 | 蛍光体および発光ダイオード |
-
2005
- 2005-12-19 CN CNB2005101023887A patent/CN100389504C/zh active Active
Cited By (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100565000C (zh) * | 2008-08-11 | 2009-12-02 | 山东华光光电子有限公司 | 利用yag透明陶瓷制备白光led的方法 |
CN102097337A (zh) * | 2009-10-22 | 2011-06-15 | 英飞凌科技股份有限公司 | 使用重组晶圆的半导体器件制造的方法和设备 |
US8772087B2 (en) | 2009-10-22 | 2014-07-08 | Infineon Technologies Ag | Method and apparatus for semiconductor device fabrication using a reconstituted wafer |
CN101872831A (zh) * | 2010-05-26 | 2010-10-27 | 上海嘉利莱实业有限公司 | 一种适用于白光led的单晶荧光材料 |
CN101894900A (zh) * | 2010-06-25 | 2010-11-24 | 北京工业大学 | 一种将单晶体用于白光led的制作方法 |
EP2634234A4 (en) * | 2010-10-29 | 2015-01-28 | Nat Inst For Materials Science | LIGHT-EMITTING DEVICE |
US9112123B2 (en) | 2010-10-29 | 2015-08-18 | National Institute For Materials Science | Light-emitting device |
EP2634234A1 (en) * | 2010-10-29 | 2013-09-04 | National Institute for Materials Science | Light-emitting device |
CN102140690A (zh) * | 2010-12-31 | 2011-08-03 | 陈哲艮 | 光致发光晶片及其制备方法和应用 |
CN102140690B (zh) * | 2010-12-31 | 2013-05-01 | 陈哲艮 | 光致发光晶片及其制备方法和应用 |
CN102154010A (zh) * | 2011-01-29 | 2011-08-17 | 陈哲艮 | 光增强光致发光材料及其制备方法和应用 |
CN104245883B (zh) * | 2012-04-24 | 2017-06-27 | 株式会社光波 | 荧光体及其制造方法以及发光装置 |
US10836961B2 (en) | 2012-04-24 | 2020-11-17 | Koha Co., Ltd. | Phosphor, method for manufacturing same, and light-emitting device |
CN104245883A (zh) * | 2012-04-24 | 2014-12-24 | 株式会社光波 | 荧光体及其制造方法以及发光装置 |
CN102903831A (zh) * | 2012-05-15 | 2013-01-30 | 北京工业大学 | 一种白光led的结构及制备工艺 |
CN102891245A (zh) * | 2012-09-17 | 2013-01-23 | 温州大学 | 将荧光晶片用于大功率白光led的封装结构及其封装方法 |
CN105189698A (zh) * | 2013-04-22 | 2015-12-23 | 克莱托斯波尔公司 | 具有单晶磷光体的白光发光二极管和生产的方法 |
US20170009135A1 (en) * | 2014-02-27 | 2017-01-12 | Kunshan Kaiwei Electronic Co., Ltd. | Composite structure based on ce: yag wafer, and manufacturing method thereof |
CN103943755B (zh) * | 2014-03-20 | 2017-09-26 | 昆山开威电子有限公司 | 一种白光led封装结构及封装方法 |
CN103943755A (zh) * | 2014-03-20 | 2014-07-23 | 昆山开威电子有限公司 | 一种白光led封装结构及封装方法 |
US9580650B1 (en) | 2014-12-25 | 2017-02-28 | DM Lighting Technologies Inc. | Method of manufacturing Ce:YAG polycrystalline phosphor |
CN107940267A (zh) * | 2016-10-13 | 2018-04-20 | 广州达森灯光股份有限公司 | 基于陶瓷转换激光光源的摇头灯 |
CN107940251A (zh) * | 2016-10-13 | 2018-04-20 | 广州达森灯光股份有限公司 | 基于单晶转换激光光源的摇头灯 |
CN112310264A (zh) * | 2019-07-31 | 2021-02-02 | 台湾应用晶体股份有限公司 | 发光装置及其制造方法 |
US11282988B2 (en) | 2019-07-31 | 2022-03-22 | Taiwan Applied Crystal Co., Ltd. | Light-emitting device and method of forming the same |
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CN100389504C (zh) | 2008-05-21 |
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Address after: 510275 No. 135 West Xingang Road, Guangdong, Guangzhou Patentee after: SUN YAT-SEN University Patentee after: GUANGZHOU SEMICONDUCTOR MATERIAL Research Institute Patentee after: FOSHAN NATIONSTAR OPTOELECTRONICS Co.,Ltd. Address before: 510275 No. 135 West Xingang Road, Guangdong, Guangzhou Patentee before: SUN YAT-SEN University Patentee before: GUANGZHOU SEMICONDUCTOR MATERIAL Research Institute Patentee before: FOSHAN NATIONSTAR OPTOELECTRONICS LLC |