JP2006261540A - 発光デバイス - Google Patents
発光デバイス Download PDFInfo
- Publication number
- JP2006261540A JP2006261540A JP2005079499A JP2005079499A JP2006261540A JP 2006261540 A JP2006261540 A JP 2006261540A JP 2005079499 A JP2005079499 A JP 2005079499A JP 2005079499 A JP2005079499 A JP 2005079499A JP 2006261540 A JP2006261540 A JP 2006261540A
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- Prior art keywords
- light
- led chip
- multilayer film
- light emitting
- optical multilayer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
【解決手段】 本発明により、青色LEDチップの周縁を黄色発光蛍光体3が混和された充填樹脂による封止樹脂4で覆い、青色LEDチップからの光と、黄色発光蛍光体からの光との混合色で白色発光を得る発光デバイス1において、封止樹脂の発光面は、青色LEDチップの中心と通る垂直線Zに軸対称とされ、発光面には、高屈折率膜と低屈折率膜とが積層された光学多層膜が設けられている発光デバイスとすることで、課題を解決する。
【選択図】 図1
Description
2…青色LEDチップ
3…黄色発光蛍光体
4…封止樹脂
5…素子基板
5a…凹部
6…金ワイヤ
7…光学多層膜
7a…透明基板
Claims (3)
- 可視LEDチップと、
前記可視LEDチップを封止し、前記可視LEDチップからの光によって励起される蛍光体が含有された樹脂と、
前記可視LEDチップからの光を所定の割合で反射し、且つ、前記可視LEDチップからの光より長い波長の光を透過して前記可視LEDチップからの光より短い波長の光を波長を反射する光学多層膜とを含み、
前記光学多層膜が、前記樹脂の光放出面上に配置されていること、を特徴とする発光デバイス。 - 前記可視LEDチップが、凹部を持つハウジングの底面にダイボンドされ、前記樹脂が前記凹部に注入され、前記多層膜が前記凹部の開口部に配置されていることを、
を特徴とする請求項1記載の発光デバイス。 - 前記光学多層膜が、透明基板上に成膜されたTiO2、Nb2O5、または、Ta2O5の何れか一つと、SiO2の積層膜でであること、
を特徴とする請求項1または請求項2に記載の発光デバイス。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005079499A JP2006261540A (ja) | 2005-03-18 | 2005-03-18 | 発光デバイス |
CNB2006100657080A CN100474645C (zh) | 2005-03-18 | 2006-03-10 | 发光器件 |
US11/276,834 US7221003B2 (en) | 2005-03-18 | 2006-03-16 | Light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005079499A JP2006261540A (ja) | 2005-03-18 | 2005-03-18 | 発光デバイス |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2006261540A true JP2006261540A (ja) | 2006-09-28 |
Family
ID=37002929
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005079499A Pending JP2006261540A (ja) | 2005-03-18 | 2005-03-18 | 発光デバイス |
Country Status (3)
Country | Link |
---|---|
US (1) | US7221003B2 (ja) |
JP (1) | JP2006261540A (ja) |
CN (1) | CN100474645C (ja) |
Cited By (17)
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KR20100017677A (ko) * | 2007-05-30 | 2010-02-16 | 오스람 옵토 세미컨덕터스 게엠베하 | 각도 필터 부재를 포함한 발광 다이오드칩 |
JP2010505247A (ja) * | 2006-09-29 | 2010-02-18 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 光電素子 |
JP2010539715A (ja) * | 2007-09-21 | 2010-12-16 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 放射放出コンポーネント |
US7939843B2 (en) * | 2006-10-26 | 2011-05-10 | Toyoda Gosei Co., Ltd. | Light emitting device and high refractive index layer |
KR20110103994A (ko) * | 2008-12-02 | 2011-09-21 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | Led 어셈블리 |
WO2011145238A1 (ja) | 2010-05-17 | 2011-11-24 | 株式会社小糸製作所 | 照明装置 |
WO2012026718A3 (ko) * | 2010-08-23 | 2012-05-10 | 국민대학교 산학협력단 | 멀티칩 백색 led 소자 |
JP2012098035A (ja) * | 2010-10-29 | 2012-05-24 | Nippon Seiki Co Ltd | 計器照明装置 |
JP2014504030A (ja) * | 2011-02-01 | 2014-02-13 | コーニンクレッカ フィリップス エヌ ヴェ | 光散乱層を有するled組立体 |
JP2014222705A (ja) * | 2013-05-13 | 2014-11-27 | シチズン電子株式会社 | Led発光装置 |
KR20150020646A (ko) * | 2015-01-16 | 2015-02-26 | 피에스아이 주식회사 | 장파장 투과필터를 포함하는 형광체 전환 단색 led |
JP2015043359A (ja) * | 2013-08-26 | 2015-03-05 | シチズン電子株式会社 | Led発光装置 |
US9711688B2 (en) | 2008-12-02 | 2017-07-18 | Koninklijke Philips N.V. | Controlling LED emission pattern using optically active materials |
JP2018107418A (ja) * | 2016-12-26 | 2018-07-05 | 日亜化学工業株式会社 | 発光装置 |
JP2018139303A (ja) * | 2015-10-08 | 2018-09-06 | 日亜化学工業株式会社 | 発光装置、集積型発光装置および発光モジュール |
JP2019135756A (ja) * | 2018-02-05 | 2019-08-15 | 日亜化学工業株式会社 | 発光装置とその製造方法 |
US11101247B2 (en) | 2015-10-08 | 2021-08-24 | Nichia Corporation | Light-emitting device, integrated light-emitting device, and light-emitting module |
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JP4525536B2 (ja) * | 2004-11-22 | 2010-08-18 | セイコーエプソン株式会社 | El装置および電子機器 |
DE102005034793B3 (de) * | 2005-07-21 | 2007-04-19 | G.L.I. Global Light Industries Gmbh | Lichtemittierende Halbleiterdiode hoher Lichtleistung |
US7755282B2 (en) * | 2006-05-12 | 2010-07-13 | Edison Opto Corporation | LED structure and fabricating method for the same |
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Cited By (35)
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JP2010505247A (ja) * | 2006-09-29 | 2010-02-18 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 光電素子 |
KR101313963B1 (ko) | 2006-09-29 | 2013-10-01 | 오스람 옵토 세미컨덕터스 게엠베하 | 광전자 장치 |
US7939843B2 (en) * | 2006-10-26 | 2011-05-10 | Toyoda Gosei Co., Ltd. | Light emitting device and high refractive index layer |
US8405104B2 (en) | 2007-05-30 | 2013-03-26 | Osram Opto Semiconductors Gmbh | Luminescent diode chip with luminescence conversion element and angular filter element |
JP2010528479A (ja) * | 2007-05-30 | 2010-08-19 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 角度フィルタ素子が設けられたルミネセンスダイオードチップ |
KR20100017677A (ko) * | 2007-05-30 | 2010-02-16 | 오스람 옵토 세미컨덕터스 게엠베하 | 각도 필터 부재를 포함한 발광 다이오드칩 |
KR101647150B1 (ko) * | 2007-05-30 | 2016-08-23 | 오스람 옵토 세미컨덕터스 게엠베하 | 각도 필터 부재를 포함한 발광 다이오드칩 |
KR101460388B1 (ko) | 2007-09-21 | 2014-11-10 | 오스람 옵토 세미컨덕터스 게엠베하 | 복사 방출 소자 |
US8963181B2 (en) | 2007-09-21 | 2015-02-24 | Osram Opto Semiconductors Gmbh | Radiation-emitting component |
JP2010539715A (ja) * | 2007-09-21 | 2010-12-16 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 放射放出コンポーネント |
US8373186B2 (en) | 2007-09-21 | 2013-02-12 | Osram Opto Semiconductors Gmbh | Radiation-emitting component |
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US7221003B2 (en) | 2007-05-22 |
CN100474645C (zh) | 2009-04-01 |
CN1835257A (zh) | 2006-09-20 |
US20060208268A1 (en) | 2006-09-21 |
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