JP2012510716A - Led組立体 - Google Patents
Led組立体 Download PDFInfo
- Publication number
- JP2012510716A JP2012510716A JP2011538091A JP2011538091A JP2012510716A JP 2012510716 A JP2012510716 A JP 2012510716A JP 2011538091 A JP2011538091 A JP 2011538091A JP 2011538091 A JP2011538091 A JP 2011538091A JP 2012510716 A JP2012510716 A JP 2012510716A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- led
- filter layer
- led assembly
- phosphor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 57
- 230000005855 radiation Effects 0.000 claims abstract description 25
- 239000010410 layer Substances 0.000 claims description 124
- 239000000463 material Substances 0.000 claims description 21
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 239000011247 coating layer Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 230000007423 decrease Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- MDPBAVVOGPXYKN-UHFFFAOYSA-N [Y].[Gd] Chemical compound [Y].[Gd] MDPBAVVOGPXYKN-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
Abstract
Description
Claims (14)
- LEDチップと、
蛍光体層と、
フィルタ層とを有するLED組立体であって、前記LEDチップから放射される約400nm乃至500nm、好ましくは約420nm乃至490nmの波長を持つ光線が、前記フィルタ層における垂線に対するそれらの放射角度に依存して、少なくとも部分的に反射されるようにして、前記フィルタ層が形成されるLED組立体。 - 前記フィルタ層が、前記フィルタ層において垂線に対して約0°乃至30°、好ましくは約0°乃至20°の放射角度を持つ前記光線を反射する請求項1に記載のLED組立体。
- 前記LEDチップによって放射される前記光線の約10%乃至50%、好ましくは15%乃至30%が、前記フィルタにおける垂線に対するそれらの放射角度に依存して、反射される請求項1に記載のLED組立体。
- 前記フィルタ層が、低屈折率材料と高屈折率材料とが交互に重なる誘電体層コーティングを有する請求項1に記載のLED組立体。
- 前記誘電体コーティング層の前記材料は、400nmと800nmとの間の波長に対して、1.6乃至3の範囲内の前記高屈折率材料の屈折率と、1.2乃至1.8の範囲内の前記低屈折率材料の屈折率とを持ち、透明である請求項4に記載のLED組立体。
- 9層の前記高屈折率材料と9層の前記低屈折率材料とが設けられる請求項4に記載のLED組立体。
- 前記フィルタ層が、前記LEDチップと前記蛍光体層との間に配設される請求項1に記載のLED組立体。
- 前記蛍光体層が、前記LEDチップの上に配設され、前記フィルタ層が、前記蛍光体層の上に配設される請求項1に記載のLED組立体。
- 前記LED組立体が、第1蛍光体層と第2蛍光体層とを有し、前記フィルタ層が、前記第1蛍光体層と前記第2蛍光体層との間に配設される請求項1に記載のLED組立体。
- 前記蛍光体層が、透明なマトリックス材料に埋め込まれる蛍光体粉末及び/又はLumiramicプレートを有する請求項1に記載のLED組立体。
- 前記フィルタ層のための基板として透明なガラスプレートが設けられる請求項1に記載のLED組立体。
- 前記フィルタ層が、750nm乃至950nm、好ましくは800nm乃至900nmの全厚を持つ請求項1に記載のLED組立体。
- 前記蛍光体層が、約80μm乃至150μm、好ましくは約100μm乃至130μmの厚さを持つ請求項1に記載のLED組立体。
- 前記高屈折率材料の前記層が、厚さにおいて、5nmから約70nmまで一様でなく、前記低屈折率材料の前記層が、厚さにおいて、約20nmから約300nmまで一様でない請求項4に記載のLED組立体。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08170458 | 2008-12-02 | ||
EP08170458.7 | 2008-12-02 | ||
PCT/IB2009/055380 WO2010064177A1 (en) | 2008-12-02 | 2009-11-27 | Led assembly |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012510716A true JP2012510716A (ja) | 2012-05-10 |
JP2012510716A5 JP2012510716A5 (ja) | 2013-01-17 |
JP5558483B2 JP5558483B2 (ja) | 2014-07-23 |
Family
ID=42035569
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011538091A Active JP5558483B2 (ja) | 2008-12-02 | 2009-11-27 | Led組立体 |
Country Status (8)
Country | Link |
---|---|
US (2) | US8957439B2 (ja) |
EP (1) | EP2374165B1 (ja) |
JP (1) | JP5558483B2 (ja) |
KR (1) | KR101654514B1 (ja) |
CN (1) | CN102239578B (ja) |
RU (1) | RU2512091C2 (ja) |
TW (1) | TWI538259B (ja) |
WO (1) | WO2010064177A1 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012186414A (ja) * | 2011-03-08 | 2012-09-27 | Toshiba Corp | 発光装置 |
JP2014027208A (ja) * | 2012-07-30 | 2014-02-06 | Nichia Chem Ind Ltd | 発光装置とその製造方法 |
JP2014504030A (ja) * | 2011-02-01 | 2014-02-13 | コーニンクレッカ フィリップス エヌ ヴェ | 光散乱層を有するled組立体 |
JP2016514276A (ja) * | 2013-02-09 | 2016-05-19 | フォスファーテック コーポレーション | 燐光体シート |
JP2017117858A (ja) * | 2015-12-22 | 2017-06-29 | 日亜化学工業株式会社 | 発光装置 |
US10333030B2 (en) | 2016-08-05 | 2019-06-25 | Nichia Corporation | Light-emitting device including reflective film and method for manufacturing light-emitting device |
US11482647B2 (en) | 2019-09-30 | 2022-10-25 | Nichia Corporation | Light emitting device having recognizable amber color emission |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010064177A1 (en) * | 2008-12-02 | 2010-06-10 | Philips Intellectual Property & Standards Gmbh | Led assembly |
US9711688B2 (en) * | 2008-12-02 | 2017-07-18 | Koninklijke Philips N.V. | Controlling LED emission pattern using optically active materials |
EP2472612A1 (en) * | 2010-12-29 | 2012-07-04 | Koninklijke Philips Electronics N.V. | Improved angular color performance of white LED lighting systems |
WO2013084132A1 (en) * | 2011-12-07 | 2013-06-13 | Koninklijke Philips Electronics N.V. | Beam shaping light emitting module |
KR20140028964A (ko) * | 2012-08-31 | 2014-03-10 | 일진엘이디(주) | 발광 분포가 우수한 반도체 발광소자 |
EP2989665B1 (en) * | 2013-04-25 | 2020-09-23 | Lumileds Holding B.V. | A light emitting diode component |
TWI511338B (zh) * | 2013-12-17 | 2015-12-01 | Ind Tech Res Inst | 發光裝置 |
DE102014112973A1 (de) * | 2014-09-09 | 2016-03-10 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
KR20160149363A (ko) | 2015-06-17 | 2016-12-28 | 삼성전자주식회사 | 반도체 발광소자 |
KR102415331B1 (ko) | 2015-08-26 | 2022-06-30 | 삼성전자주식회사 | 발광 소자 패키지, 및 이를 포함하는 장치 |
KR101739851B1 (ko) * | 2015-10-30 | 2017-05-25 | 주식회사 썬다이오드코리아 | 파장변환구조체를 포함하는 발광 소자 |
WO2017132489A1 (en) * | 2016-01-28 | 2017-08-03 | Corning Incorporated | Methods for dispensing quantum dot materials |
KR101888083B1 (ko) * | 2016-11-17 | 2018-08-13 | 엘지전자 주식회사 | 차량용 램프 |
FR3062459B1 (fr) * | 2017-02-01 | 2021-03-19 | Schneider Electric Ind Sas | Dispositif a fonction de signalisation lumineuse |
CN109411590B (zh) * | 2017-08-17 | 2020-01-07 | 光宝光电(常州)有限公司 | 发光二极管结构及发光单元 |
EP3457444A1 (en) * | 2017-09-19 | 2019-03-20 | ams AG | Phosphor-converted light-emitting device |
DE102020103070A1 (de) * | 2020-02-06 | 2021-08-12 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung optoelektronischer bauelemente und optoelektronisches bauelement |
WO2021204652A1 (de) * | 2020-04-08 | 2021-10-14 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauelement und beleuchtungsvorrichtung |
DE102021123818A1 (de) * | 2021-09-15 | 2023-03-16 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierendes halbleiterbauteil, verfahren zur auswahl eines dielektrischen schichtenstapels und verfahren zur auswahl eines konversionsmaterials |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006005367A (ja) * | 2004-06-03 | 2006-01-05 | Lumileds Lighting Us Llc | 発光デバイスのための発光セラミック |
JP2006261540A (ja) * | 2005-03-18 | 2006-09-28 | Stanley Electric Co Ltd | 発光デバイス |
Family Cites Families (23)
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US4822144A (en) | 1986-12-24 | 1989-04-18 | U.S. Philips Corporation | Electro-optic color display including luminescent layer and interference filter |
US5813752A (en) * | 1997-05-27 | 1998-09-29 | Philips Electronics North America Corporation | UV/blue LED-phosphor device with short wave pass, long wave pass band pass and peroit filters |
US5813753A (en) * | 1997-05-27 | 1998-09-29 | Philips Electronics North America Corporation | UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light |
DE10112542B9 (de) * | 2001-03-15 | 2013-01-03 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes optisches Bauelement |
JP2003051622A (ja) * | 2001-08-07 | 2003-02-21 | Rohm Co Ltd | 白色系半導体発光装置 |
JP2003152227A (ja) * | 2001-11-14 | 2003-05-23 | Citizen Electronics Co Ltd | Ledの色補正手段および色補正方法 |
US6744077B2 (en) * | 2002-09-27 | 2004-06-01 | Lumileds Lighting U.S., Llc | Selective filtering of wavelength-converted semiconductor light emitting devices |
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US20070267646A1 (en) * | 2004-06-03 | 2007-11-22 | Philips Lumileds Lighting Company, Llc | Light Emitting Device Including a Photonic Crystal and a Luminescent Ceramic |
RU41547U1 (ru) * | 2004-06-15 | 2004-10-27 | Открытое акционерное общество "Научно-исследовательский институт полупроводниковых приборов" | Источник света |
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US7341878B2 (en) * | 2005-03-14 | 2008-03-11 | Philips Lumileds Lighting Company, Llc | Wavelength-converted semiconductor light emitting device |
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RU53500U1 (ru) * | 2005-11-22 | 2006-05-10 | Емельян Михайлович Гамарц | Электролюминесцентный излучатель |
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WO2008025723A1 (en) * | 2006-08-29 | 2008-03-06 | Osram Sylvania Inc. | Enhanced emission from phosphor-converted leds using interferometric filters |
EP2067177B1 (de) * | 2006-09-29 | 2017-04-19 | OSRAM Opto Semiconductors GmbH | Optoelektronisches bauelement |
RU2333571C1 (ru) * | 2007-03-21 | 2008-09-10 | Открытое акционерное общество "Конструкторское бюро электроизделий XXI века" | Излучающий диод |
DE102007025092A1 (de) * | 2007-05-30 | 2008-12-04 | Osram Opto Semiconductors Gmbh | Lumineszenzdiodenchip |
US8916890B2 (en) * | 2008-03-19 | 2014-12-23 | Cree, Inc. | Light emitting diodes with light filters |
WO2010064177A1 (en) * | 2008-12-02 | 2010-06-10 | Philips Intellectual Property & Standards Gmbh | Led assembly |
-
2009
- 2009-11-27 WO PCT/IB2009/055380 patent/WO2010064177A1/en active Application Filing
- 2009-11-27 EP EP09775296.8A patent/EP2374165B1/en active Active
- 2009-11-27 JP JP2011538091A patent/JP5558483B2/ja active Active
- 2009-11-27 RU RU2011127140/28A patent/RU2512091C2/ru active
- 2009-11-27 KR KR1020117015306A patent/KR101654514B1/ko active IP Right Grant
- 2009-11-27 CN CN200980148279.5A patent/CN102239578B/zh active Active
- 2009-11-27 US US13/131,384 patent/US8957439B2/en active Active
- 2009-11-30 TW TW098140838A patent/TWI538259B/zh active
-
2015
- 2015-02-10 US US14/618,406 patent/US20150162503A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006005367A (ja) * | 2004-06-03 | 2006-01-05 | Lumileds Lighting Us Llc | 発光デバイスのための発光セラミック |
JP2006261540A (ja) * | 2005-03-18 | 2006-09-28 | Stanley Electric Co Ltd | 発光デバイス |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014504030A (ja) * | 2011-02-01 | 2014-02-13 | コーニンクレッカ フィリップス エヌ ヴェ | 光散乱層を有するled組立体 |
JP2012186414A (ja) * | 2011-03-08 | 2012-09-27 | Toshiba Corp | 発光装置 |
JP2014027208A (ja) * | 2012-07-30 | 2014-02-06 | Nichia Chem Ind Ltd | 発光装置とその製造方法 |
US9324925B2 (en) | 2012-07-30 | 2016-04-26 | Nichia Corporation | Light emitting device having a metal film extending from the first electrode |
JP2016514276A (ja) * | 2013-02-09 | 2016-05-19 | フォスファーテック コーポレーション | 燐光体シート |
JP2017117858A (ja) * | 2015-12-22 | 2017-06-29 | 日亜化学工業株式会社 | 発光装置 |
US10090441B2 (en) | 2015-12-22 | 2018-10-02 | Nichia Corporation | Light emitting device |
US10553763B2 (en) | 2015-12-22 | 2020-02-04 | Nichia Corporation | Light emitting device |
US11139418B2 (en) | 2015-12-22 | 2021-10-05 | Nichia Corporation | Light emitting device |
US11631789B2 (en) | 2015-12-22 | 2023-04-18 | Nichia Corporation | Light emitting device |
US10333030B2 (en) | 2016-08-05 | 2019-06-25 | Nichia Corporation | Light-emitting device including reflective film and method for manufacturing light-emitting device |
US11482647B2 (en) | 2019-09-30 | 2022-10-25 | Nichia Corporation | Light emitting device having recognizable amber color emission |
Also Published As
Publication number | Publication date |
---|---|
US8957439B2 (en) | 2015-02-17 |
RU2512091C2 (ru) | 2014-04-10 |
TWI538259B (zh) | 2016-06-11 |
RU2011127140A (ru) | 2013-01-10 |
WO2010064177A1 (en) | 2010-06-10 |
EP2374165A1 (en) | 2011-10-12 |
US20110220953A1 (en) | 2011-09-15 |
JP5558483B2 (ja) | 2014-07-23 |
EP2374165B1 (en) | 2019-01-09 |
CN102239578B (zh) | 2015-06-03 |
US20150162503A1 (en) | 2015-06-11 |
KR20110103994A (ko) | 2011-09-21 |
TW201027810A (en) | 2010-07-16 |
KR101654514B1 (ko) | 2016-09-07 |
CN102239578A (zh) | 2011-11-09 |
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