JP2019096791A - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP2019096791A JP2019096791A JP2017226256A JP2017226256A JP2019096791A JP 2019096791 A JP2019096791 A JP 2019096791A JP 2017226256 A JP2017226256 A JP 2017226256A JP 2017226256 A JP2017226256 A JP 2017226256A JP 2019096791 A JP2019096791 A JP 2019096791A
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- 238000002834 transmittance Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 15
- 239000010408 film Substances 0.000 description 46
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000003822 epoxy resin Substances 0.000 description 7
- 229920000647 polyepoxide Polymers 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229920002050 silicone resin Polymers 0.000 description 7
- 238000000605 extraction Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 240000003380 Passiflora rubra Species 0.000 description 5
- 210000000007 bat wing Anatomy 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
- H01L33/105—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Planar Illumination Modules (AREA)
Abstract
Description
(発光装置の構成)
図1は、第1の実施の形態に係る発光装置1の垂直断面図である。発光装置1は、基体10と、基体10上に搭載された発光素子11と、基体10上に形成された、発光素子11を囲む反射部材12と、発光素子11の上方を覆うように設置された、上面が平坦な透明部材13と、透明部材13の上面の上に設置されたDBR(Distributed Bragg Reflector)膜14と、を備える。
図5(a)〜(d)は、第1の実施の形態に係る発光装置1の製造工程の一例を示す垂直断面図である。
第2の実施の形態は、透明部材と反射部材の形状において第1の実施の形態と異なる。第1の実施の形態と同様の点については説明を省略又は簡略化する。
図6(a)、(b)は、それぞれ第2の実施の形態に係る発光装置2の垂直断面図、斜視図である。なお、図6(b)では、後述する透明部材23及びDBR膜14の図示を省略している。
図9(a)〜(d)は、第2の実施の形態に係る発光装置2の製造工程の一例を示す垂直断面図である。
第3の実施の形態は、反射部材の形状において第2の実施の形態と異なる。第2の実施の形態と同様の点については説明を省略又は簡略化する。
図10(a)、(b)は、それぞれ第3の実施の形態に係る発光装置3の垂直断面図、斜視図である。なお、図10(b)では、後述する透明部材23及びDBR膜14の図示を省略している。
上記の第1〜第3の実施の形態によれば、軸上光度が小さい理想的なバットウィング形状の配光特性を有する発光装置を提供することができる。また、これらの発光装置は、バットウィング形状の配光特性を実現するために二次レンズを用いていないため、小型化や、製造コストの低減を図ることができる。
10 基体
11 発光素子
12、22、32 反射部材
13 透明部材
13a 第1の部分
13b 第2の部分
14 DBR膜
25、35 側面
25a、35a 第1の傾斜面
25b、35b 第2の傾斜面
Claims (8)
- 基体上に搭載された発光素子と、
前記基体上に形成された、前記発光素子を囲む反射部材と、
前記発光素子の上方を覆うように設置された、上面が平坦な透明部材と、
前記透明部材の上面の上に設置されたDBR膜と、
を備え、
前記発光素子から発せられて前記DBR膜に入射する光の入射角と前記DBR膜の透過率の関係において、入射角が0°よりも大きい範囲に透過率のピークが存在する、
発光装置。 - 前記透明部材が、前記発光素子の上面を覆う第1の部分と、前記第1の部分の上面及び前記反射部材の上面の上に設置された平板状の第2の部分とを有し、
前記反射部材が、前記発光素子の側面及び前記第1の部分の側面を覆う、
請求項1に記載の発光装置。 - 配光角と発光強度の関係において、配光角が0°のときの発光強度が、ピーク発光強度の10%以下である、
請求項1又は2に記載の発光装置。 - 前記透明部材の全ての側面が前記反射部材に覆われた、
請求項1に記載の発光装置。 - 前記反射部材の内側の側面が、前記反射部材の内側の空間が上方に向かって広がるように傾斜し、
前記透明部材が、前記反射部材の内側の空間に充填され、前記発光素子の上面及び側面を覆う、
請求項4に記載の発光装置。 - 前記反射部材の内側の側面が、前記基体の上面に対して第1の角度で傾斜した第1の傾斜面と、前記基体の上面に対して前記第1の角度よりも小さい第2の角度で傾斜した、前記第1の傾斜面の上側に位置する第2の傾斜面と、を有する、
請求項5に記載の発光装置。 - 前記反射部材の内側の側面が、逆円錐台の側面を構成する形状を有する、
請求項5又は6に記載の発光装置。 - 配光角と発光強度の関係において、配光角が0°のときの発光強度が、ピーク発光強度の5%以下である、
請求項4〜7のいずれか1項に記載の発光装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2017226256A JP6870592B2 (ja) | 2017-11-24 | 2017-11-24 | 発光装置 |
US16/197,729 US10825971B2 (en) | 2017-11-24 | 2018-11-21 | Light-emitting device including a Distributed Bragg Reflector (DBR) film |
Applications Claiming Priority (1)
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JP2017226256A JP6870592B2 (ja) | 2017-11-24 | 2017-11-24 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
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JP2019096791A true JP2019096791A (ja) | 2019-06-20 |
JP6870592B2 JP6870592B2 (ja) | 2021-05-12 |
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JP2017226256A Active JP6870592B2 (ja) | 2017-11-24 | 2017-11-24 | 発光装置 |
Country Status (2)
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US (1) | US10825971B2 (ja) |
JP (1) | JP6870592B2 (ja) |
Families Citing this family (1)
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US11476308B2 (en) * | 2019-03-22 | 2022-10-18 | Nichia Corporation | Method for manufacturing image display device and image display device |
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US10825971B2 (en) | 2020-11-03 |
US20190165227A1 (en) | 2019-05-30 |
JP6870592B2 (ja) | 2021-05-12 |
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