US20090147235A1 - Beam transforming element, illumination optical apparatus, exposure apparatus, and exposure method with two optical elements having different thicknesses - Google Patents

Beam transforming element, illumination optical apparatus, exposure apparatus, and exposure method with two optical elements having different thicknesses Download PDF

Info

Publication number
US20090147235A1
US20090147235A1 US12/320,480 US32048009A US2009147235A1 US 20090147235 A1 US20090147235 A1 US 20090147235A1 US 32048009 A US32048009 A US 32048009A US 2009147235 A1 US2009147235 A1 US 2009147235A1
Authority
US
United States
Prior art keywords
optical
radiation
basic element
illumination
optical member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US12/320,480
Inventor
Mitsunori Toyoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to US12/320,480 priority Critical patent/US20090147235A1/en
Publication of US20090147235A1 publication Critical patent/US20090147235A1/en
Priority to US13/137,003 priority patent/US9164209B2/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0927Systems for changing the beam intensity distribution, e.g. Gaussian to top-hat
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938Using specific optical elements
    • G02B27/0944Diffractive optical elements, e.g. gratings, holograms
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4233Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4261Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element with major polarization dependent properties
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/44Grating systems; Zone plate systems
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/30Polarising elements
    • G02B5/3025Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70091Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70091Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/7015Details of optical elements
    • G03F7/70158Diffractive optical elements
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566Polarisation control
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Definitions

  • the present invention relates to a beam transforming element, illumination optical apparatus, exposure apparatus, and exposure method and, more particularly, to an illumination optical apparatus suitably applicable to exposure apparatus used in production of microdevices such as semiconductor elements, image pickup elements, liquid crystal display elements, and thin-film magnetic heads by lithography.
  • a beam emitted from a light source travels through a fly's eye lens as an optical integrator to form a secondary light source as a substantial surface illuminant consisting of a number of light sources.
  • Beams from the secondary light source (generally, an illumination pupil distribution formed on or near an illumination pupil of the illumination optical apparatus) are limited through an aperture stop disposed near the rear focal plane of the fly's eye lens and then enter a condenser lens.
  • the beams condensed by the condenser lens superposedly illuminate a mask on which a predetermined pattern is formed.
  • the light passing through the pattern of the mask is focused on a wafer through a projection optical system.
  • the mask pattern is projected for exposure (or transcribed) onto the wafer.
  • the pattern formed on the mask is a highly integrated pattern, and, in order to accurately transcribe this microscopic pattern onto the wafer, it is indispensable to obtain a uniform illuminance distribution on the wafer.
  • Japanese Patent No. 3246615 owned by the same Applicant of the present application discloses the following technology for realizing the illumination condition suitable for faithful transcription of the microscopic pattern in arbitrary directions: the secondary light source is formed in an annular shape on the rear focal plane of the fly's eye lens and the beams passing the secondary light source of the annular shape are set to be in a linearly polarized state with a direction of polarization along the circumferential direction thereof (hereinafter referred to as a “azimuthal polarization state”).
  • An object of the present invention is to form an illumination pupil distribution of an annular shape in a azimuthal polarization state while well suppressing the loss of light quantity.
  • Another object of the present invention is to transcribe a microscopic pattern in an arbitrary direction under an appropriate illumination condition faithfully and with high throughput, by forming an illumination pupil distribution of an annular shape in a azimuthal polarization state while well suppressing the loss of light quantity.
  • a first aspect of the present embodiment is to provide a beam transforming element for forming a predetermined light intensity distribution on a predetermined surface on the basis of an incident beam, comprising:
  • a first basic element made of an optical material with optical activity, for forming a first region distribution of the predetermined light intensity distribution on the basis of the incident beam
  • a second basic element made of an optical material with optical activity, for forming a second region distribution of the predetermined light intensity distribution on the basis of the incident beam
  • first basic element and the second basic element have their respective thicknesses different from each other along a direction of transmission of light.
  • a second aspect of the present embodiment is to provide a beam transforming element for, based on an incident beam, forming a predetermined light intensity distribution of a shape different from a sectional shape of the incident beam, on a predetermined surface, comprising:
  • the predetermined light intensity distribution is a distribution in at least a part of a predetermined annular region, which is a predetermined annular region centered around a predetermined point on the predetermined surface, and
  • a beam from the beam transforming element passing through the predetermined annular region has a polarization state in which a principal component is linearly polarized light having a direction of polarization along a circumferential direction (azymuthally direction) of the predetermined annular region.
  • a third aspect of the present invention is to provide an illumination optical apparatus for illuminating a surface to be illuminated, based on a beam from a light source, comprising:
  • a fourth aspect of the present embodiment is to provide an exposure apparatus comprising the illumination optical apparatus of the third aspect for illuminating a pattern
  • the exposure apparatus being arranged to project the pattern onto a photosensitive substrate.
  • a fifth aspect of the present embodiment is to provide an exposure method comprising: an illumination step of illuminating a pattern by use of the illumination optical apparatus of the third aspect; and an exposure step of projecting the pattern onto a photosensitive substrate.
  • the illumination optical apparatus of the present embodiment is able to form the illumination pupil distribution of the annular shape in the azimuthal polarization state, with no substantial loss of light quantity, by diffraction and optical rotating action of the diffractive optical element as the beam transforming element. Namely, the illumination optical apparatus of the present invention is able to form the illumination pupil distribution of the annular shape in the azimuthal polarization state while well suppressing the loss of light quantity.
  • the exposure apparatus and exposure method using the illumination optical apparatus of the present embodiment are arranged to use the illumination optical apparatus capable of forming the illumination pupil distribution of the annular shape in the azimuthal polarization state while well suppressing the loss of light quantity, they are able to transcribe a microscopic pattern in an arbitrary direction under an appropriate illumination condition faithfully and with high throughput and, in turn, to produce good devices with high throughput.
  • FIG. 1 is an illustration schematically showing a configuration of an exposure apparatus with an illumination optical apparatus according to an embodiment of the present invention.
  • FIG. 2 is an illustration showing a secondary light source of an annular shape formed in annular illumination.
  • FIG. 3 is an illustration schematically showing a configuration of a conical axicon system disposed in an optical path between a front lens unit and a rear lens unit of an afocal lens in FIG. 1 .
  • FIG. 4 is an illustration to illustrate the action of the conical axicon system on the secondary light source of the annular shape.
  • FIG. 5 is an illustration to illustrate the action of a zoom lens on the secondary light source of the annular shape.
  • FIG. 6 is an illustration schematically showing a first cylindrical lens pair and a second cylindrical lens pair disposed in an optical path between the front lens unit and the rear lens unit of the afocal lens in FIG. 1 .
  • FIG. 7 is a first drawing to illustrate the action of the first cylindrical lens pair and the second cylindrical lens pair on the secondary light source of the annular shape.
  • FIG. 8 is a second drawing to illustrate the action of the first cylindrical lens pair and the second cylindrical lens pair on the secondary light source of the annular shape.
  • FIG. 9 is a third drawing to illustrate the action of the first cylindrical lens pair and the second cylindrical lens pair on the secondary light source of the annular shape.
  • FIG. 10 is a perspective view schematically showing an internal configuration of a polarization monitor in FIG. 1 .
  • FIG. 11 is an illustration schematically showing a configuration of a diffractive optical element for azimuthally polarized annular illumination according to an embodiment of the present invention.
  • FIG. 12 is an illustration schematically showing a secondary light source of an annular shape set in the azimuthal polarization state.
  • FIG. 13 is an illustration to illustrate the action of a first basic element.
  • FIG. 14 is an illustration to illustrate the action of a second basic element.
  • FIG. 15 is an illustration to illustrate the action of a third basic element.
  • FIG. 16 is an illustration to illustrate the action of a fourth basic element.
  • FIG. 17 is an illustration to illustrate the optical activity of crystalline quartz.
  • FIGS. 18A and 18B are illustrations showing octapole secondary light sources in the azimuthal polarization state consisting of eight arc regions spaced from each other along the circumferential direction and a quadrupole secondary light source in the azimuthal polarization state consisting of four arc regions spaced from each other along the circumferential direction.
  • FIG. 19 is an illustration showing a secondary light source of an annular shape in the azimuthal polarization state consisting of eight arc regions overlapping with each other along the circumferential direction.
  • FIGS. 20A and 20B are illustrations showing hexapole secondary light sources in the azimuthal polarization state consisting of six arc regions spaced from each other along the circumferential direction and a secondary light source in the azimuthal polarization state having a plurality of regions spaced from each other along the circumferential direction and a region on the optical axis.
  • FIG. 21 is an illustration showing an example in which an entrance-side surface of a diffractive optical element for azimuthally polarized annular illumination is planar.
  • FIG. 22 is a flowchart of a procedure of obtaining semiconductor devices as microdevices.
  • FIG. 23 is a flowchart of a procedure of obtaining a liquid crystal display element as a microdevice.
  • FIG. 1 is an illustration schematically showing a configuration of an exposure apparatus with an illumination optical apparatus according to an embodiment of the present invention.
  • the Z-axis is defined along a direction of a normal to a wafer W being a photosensitive substrate, the Y-axis along a direction parallel to the plane of FIG. 1 in the plane of the wafer W, and the X-axis along a direction of a normal to the plane of FIG. 1 in the plane of wafer W.
  • the exposure apparatus of the present embodiment is provided with a light source 1 for supplying exposure light (illumination light).
  • the light source 1 can be, for example, a KrF excimer laser light source for supplying light with the wavelength of 248 nm, an ArF excimer laser light source for supplying light with the wavelength of 193 nm, or the like.
  • a nearly parallel beam emitted along the Z-direction from the light source 1 has a cross section of a rectangular shape elongated along the X-direction, and is incident to a beam expander 2 consisting of a pair of lenses 2 a and 2 b .
  • the lenses 2 a and 2 b have a negative refracting power and a positive refracting power, respectively, in the plane of FIG. 1 (or in the YZ plane). Therefore, the beam incident to the beam expander 2 is enlarged in the plane of FIG. 1 and shaped into a beam having a cross section of a predetermined rectangular shape.
  • the nearly parallel beam passing through the beam expander 2 as a beam shaping optical system is deflected into the Y-direction by a bending mirror 3 , and then travels through a quarter wave plate 4 a , a half wave plate 4 b , a depolarizer (depolarizing element) 4 c , and a diffractive optical element 5 for annular illumination to enter an afocal lens 6 .
  • the quarter wave plate 4 a , half wave plate 4 b , and depolarizer 4 c constitute a polarization state converter 4 , as described later.
  • the afocal lens 6 is an afocal system (afocal optic) set so that the front focal position thereof approximately coincides with the position of the diffractive optical element 5 and so that the rear focal position thereof approximately coincides with the position of a predetermined plane 7 indicated by a dashed line in the drawing.
  • a diffractive optical element is constructed by forming level differences with the pitch of approximately the wavelength of exposure light (illumination light) in a substrate and has the action of diffracting an incident beam at desired angles.
  • the diffractive optical element 5 for annular illumination has the following function: when a parallel beam having a rectangular cross section is incident thereto, it forms a light intensity distribution of an annular shape in its far field (or Fraunhofer diffraction region).
  • the nearly parallel beam incident to the diffractive optical element 5 as a beam transforming element forms a light intensity distribution of an annular shape on the pupil plane of the afocal lens 6 and then emerges as a nearly parallel beam from the afocal lens 6 .
  • a conical axicon system 8 In an optical path between front lens unit 6 a and rear lens unit 6 b of the afocal lens 6 there are a conical axicon system 8 , a first cylindrical lens pair 9 , and a second cylindrical lens pair 10 arranged in order from the light source side on or near the pupil plane of the afocal lens, and the detailed configuration and action thereof will be described later.
  • the fundamental configuration and action will be described below, in disregard of the action of the conical axicon system 8 , first cylindrical lens pair 9 , and second cylindrical lens pair 10 .
  • the beam through the afocal lens 6 travels through a zoom lens 11 for variation of ⁇ -value and then enters a micro fly's eye lens (or fly's eye lens) 12 as an optical integrator.
  • the micro fly's eye lens 12 is an optical element consisting of a number of micro lenses with a positive refracting power arranged lengthwise and breadthwise and densely.
  • a micro fly's eye lens is constructed, for example, by forming a micro lens group by etching of a plane-parallel plate.
  • each micro lens forming the micro fly's eye lens is much smaller than each lens element forming a fly's eye lens.
  • the micro fly's eye lens is different from the fly's eye lens consisting of lens elements spaced from each other, in that a number of micro lenses (micro refracting surfaces) are integrally formed without being separated from each other.
  • the micro fly's eye lens is a wavefront splitting optical integrator of the same type as the fly's eye lens.
  • the position of the predetermined plane 7 is arranged near the front focal position of the zoom lens 11
  • the entrance surface of the micro fly's eye lens 12 is arranged near the rear focal position of the zoom lens 11 .
  • the zoom lens 11 arranges the predetermined plane 7 and the entrance surface of the micro fly's eye lens 12 substantially in the relation of Fourier transform and eventually arranges the pupil plane of the afocal lens 6 and the entrance surface of the micro fly's eye lens 12 approximately optically conjugate with each other.
  • an illumination field of an annular shape centered around the optical axis AX is formed on the entrance surface of the micro fly's eye lens 12 , as on the pupil plane of the afocal lens 6 .
  • the entire shape of this annular illumination field similarly varies depending upon the focal length of the zoom lens 11 .
  • Each micro lens forming the micro fly's eye lens 12 has a rectangular cross section similar to a shape of an illumination field to be formed on a mask M (eventually, a shape of an exposure region to be formed on a wafer W).
  • the beam incident to the micro fly's eye lens 12 is two-dimensionally split by a number of micro lenses to form on its rear focal plane (eventually on the illumination pupil) a secondary light source having much the same light intensity distribution as the illumination field formed by the incident beam, i.e., a secondary light source consisting of a substantial surface illuminant of an annular shape centered around the optical axis AX, as shown in FIG. 2 .
  • Beams from the secondary light source formed on the rear focal plane of the micro fly's eye lens 12 (in general, an illumination pupil distribution formed on or near the pupil plane of the illumination optical apparatus) travel through beam splitter 13 a and condenser optical system 14 to superposedly illuminate a mask blind 15 .
  • an illumination field of a rectangular shape according to the shape and focal length of each micro lens forming the micro fly's eye lens 12 is formed on the mask blind 15 as an illumination field stop.
  • the internal configuration and action of polarization monitor 13 incorporating a beam splitter 13 a will be described later. Beam through a rectangular aperture (light transmitting portion) of the mask blind 15 are subject to light condensing action of imaging optical system 16 and thereafter superposedly illuminate the mask M on which a predetermined pattern is formed.
  • the imaging optical system 16 forms an image of the rectangular aperture of the mask blind 15 on the mask M.
  • a beam passing through the pattern of mask M travels through a projection optical system PL to form an image of the mask pattern on the wafer W being a photosensitive substrate.
  • the pattern of the mask M is sequentially printed in each exposure area on the wafer W through full-wafer exposure or scan exposure with two-dimensional drive control of the wafer W in the plane (XY plane) perpendicular to the optical axis AX of the projection optical system PL.
  • the quarter wave plate 4 a is arranged so that its crystallographic axis is rotatable around the optical axis AX, and it transforms incident light of elliptical polarization into light of linear polarization.
  • the half wave plate 4 b is arranged so that its crystallographic axis is rotatable around the optical axis AX, and it changes the plane of polarization of linearly polarized light incident thereto.
  • the depolarizer 4 c is composed of a wedge-shaped crystalline quartz prism (not shown) and a wedge-shaped fused sillica prism (not shown) having complementary shapes.
  • the crystalline quartz prism and the fussed sillica prism are constructed as an integral prism assembly so as to be set into and away from the illumination optical path.
  • the light source 1 is the KrF excimer laser light source or the ArF excimer laser light source
  • light emitted from these light sources typically has the degree of polarization of 95% or more and light of almost linear polarization is incident to the quarter wave plate 4 a .
  • a right-angle prism as a back-surface reflector is interposed in the optical path between the light source 1 and the polarization state converter 4 , the linearly polarized light will be changed into elliptically polarized light by virtue of total reflection in the right-angle prism unless the plane of polarization of the incident, linearly polarized light agrees with the P-polarization plane or S-polarization plane.
  • the polarization state converter 4 for example, even if light of elliptical polarization is incident thereto because of the total reflection in the right-angle prism, light of linear polarization transformed by the action of the quarter wave plate 4 a will be incident to the half wave plate 4 b .
  • the crystallographic axis of the half wave plate 4 b is set at an angle of 0° or 90° relative to the plane of polarization of the incident, linearly polarized light, the light of linear polarization incident to the half wave plate 4 b will pass as it is, without change in the plane of polarization.
  • the crystallographic axis of the half wave plate 4 b is set at an angle of 45° relative to the plane of polarization of the incident, linearly polarized light
  • the light of linear polarization incident to the half wave plate 4 b will be transformed into light of linear polarization with change of polarization plane of 90°.
  • the crystallographic axis of the crystalline quartz prism in the depolarizer 4 c is set at an angle of 45° relative to the polarization plane of the incident, linearly polarized light
  • the light of linear polarization incident to the crystalline quartz prism will be transformed (or depolarized) into light in an unpolarized state.
  • the polarization state converter 4 is arranged as follows: when the depolarizer 4 c is positioned in the illumination optical path, the crystallographic axis of the crystalline quartz prism makes the angle of 45° relative to the polarization plane of the incident, linearly polarized light. Incidentally, where the crystallographic axis of the crystalline quartz prism is set at the angle of 0° or 90° relative to the polarization plane of the incident, linearly polarized light, the light of linear polarization incident to the crystalline quartz prism will pass as it is, without change of the polarization plane.
  • the crystallographic axis of the half wave plate 4 b is set at an angle of 22.5° relative to the polarization plane of incident, linearly polarized light
  • the light of linear polarization incident to the half wave plate 4 b will be transformed into light in an unpolarized state including a linear polarization component directly passing without change of the polarization plane and a linear polarization component with the polarization plane rotated by 90°.
  • the polarization state converter 4 is arranged so that light of linear polarization is incident to the half wave plate 4 b , as described above, and, for easier description hereinafter, it is assumed that light of linear polarization having the direction of polarization (direction of the electric field) along the Z-axis in FIG. 1 (hereinafter referred to as “Z-directionally polarized light”) is incident to the half wave plate 4 b .
  • the depolarizer 4 c When the depolarizer 4 c is positioned in the illumination optical path and when the crystallographic axis of the half wave plate 4 b is set at the angle of 0° or 90° relative to the polarization plane (direction of polarization) of the Z-directionally polarized light incident thereto, the light of Z-directional polarization incident to the half wave plate 4 b passes as kept as Z-directionally polarized light without change of the polarization plane and enters the crystalline quartz prism in the depolarizer 4 c .
  • the crystallographic axis of the crystalline quartz prism is set at the angle of 45° relative to the polarization plane of the Z-directionally polarized light incident thereto, the light of Z-directional polarization incident to the crystalline quartz prism is transformed into light in an unpolarized state.
  • the light depolarized through the crystalline quartz prism travels through the quartz prism as a compensator for compensating the traveling direction of the light and is incident into the diffractive optical element 5 while being in the depolarized state.
  • the crystallographic axis of the half wave plate 4 b is set at the angle of 45° relative to the polarization plane of the Z-directionally polarized light incident thereto, the light of Z-directional polarization incident to the half wave plate 4 b will be rotated in the polarization plane by 90° and transformed into light of linear polarization having the polarization direction (direction of the electric field) along the X-direction in FIG.
  • X-directionally polarized light (hereinafter referred to as “X-directionally polarized light”) and the X-directionally polarized light will be incident to the crystalline quartz prism in the depolarizer 4 c . Since the crystallographic axis of the crystalline quartz prism is set at the angle of 45° relative to the polarization plane of the incident, X-directionally polarized light as well, the light of X-directional polarization incident to the crystalline quartz prism is transformed into light in the depolarized state, and the light travels through the quartz prism to be incident in the depolarized state into the diffractive optical element 5 .
  • the depolarizer 4 c when the depolarizer 4 c is set away from the illumination optical path, if the crystallographic axis of the half wave plate 4 b is set at the angle of 0° or 90° relative to the polarization plane of the Z-directionally polarized light incident thereto, the light of Z-directional polarization incident to the half wave plate 4 b will pass as kept as Z-directionally polarized light without change of the polarization plane, and will be incident in the Z-directionally polarized state into the diffractive optical element 5 .
  • the crystallographic axis of the half wave plate 4 b is set at the angle of 45° relative to the polarization plane of the Z-directionally polarized light incident thereto on the other hand, the light of Z-directional polarization incident to the half wave plate 4 b will be transformed into light of X-directional polarization with the polarization plane rotated by 90°, and will be incident in the X-directionally polarized state into the diffractive optical element 5 .
  • the light in the depolarized state can be made incident to the diffractive optical element 5 when the depolarizer 4 c is set and positioned in the illumination optical path.
  • the depolarizer 4 c is set away from the illumination optical path and when the crystallographic axis of the half wave plate 4 b is set at the angle of 0° or 90° relative to the polarization plane of the Z-directionally polarized light incident thereto, the light in the Z-directionally polarized state can be made incident to the diffractive optical element 5 .
  • the depolarizer 4 c when the depolarizer 4 c is set away from the illumination optical path and when the crystallographic axis of the half wave plate 4 b is set at the angle of 45° relative to the polarization plane of the Z-directionally polarized light incident thereto, the light in the X-directionally polarized state can be made incident to the diffractive optical element 5 .
  • the polarization state converter 4 is able to switch the polarization state of the incident light into the diffractive optical element 5 (a state of polarization of light to illuminate the mask M and wafer W in use of an ordinary diffractive optical element except for the diffractive optical element for azimuthally polarized annular illumination according to the present invention as will be described later) between the linearly polarized state and the unpolarized state through the action of the polarization state converter consisting of the quarter wave plate 4 a , half wave plate 4 b , and depolarizer 4 c , and, in the case of the linearly polarized state, it is able to switch between mutually orthogonal polarization states (between the Z-directional polarization and the X-directional polarization).
  • FIG. 3 is an illustration schematically showing the configuration of the conical axicon system disposed in the optical path between the front lens unit and the rear lens unit of the afocal lens in FIG. 1 .
  • the conical axicon system 8 is composed of a first prism member 8 a whose plane is kept toward the light source and whose refracting surface of a concave conical shape is kept toward the mask, and a second prism member 8 b whose plane is kept toward the mask and whose refracting surface of a convex conical shape is kept toward the light source, in order from the light source side.
  • the refracting surface of the concave conical shape of the first prism member 8 a and the refracting surface of the convex conical shape of the second prism member 8 b are formed in a complementary manner so as to be able to be brought into contact with each other. At least one of the first prism member 8 a and the second prism member 8 b is arranged movable along the optical axis AX, so that the spacing can be varied between the refracting surface of the concave conical shape of the first prism member 8 a and the refracting surface of the convex conical shape of the second prism member 8 b.
  • the conical axicon system 8 functions as a plane-parallel plate and has no effect on the secondary light source of the annular shape formed.
  • the conical axicon system 8 functions a so-called beam expander. Therefore, the angle of the incident beam to the predetermined plane 7 varies according to change in the spacing of the conical axicon system 8 .
  • FIG. 4 is an illustration to illustrate the action of the conical axicon system on the secondary light source of the annular shape.
  • the secondary light source 30 a of the minimum annular shape formed in a state where the spacing of the conical axicon system 8 is zero and where the focal length of the zoom lens 11 is set at the minimum (this state will be referred to hereinafter as a “standard state”) is changed into secondary light source 30 b of an annular shape with the outside diameter and inside diameter both enlarged and without change in the width (half of the difference between the inside diameter and the outside diameter: indicated by arrows in the drawing) when the spacing of the conical axicon system 8 is increased from zero to a predetermined value.
  • an annular ratio (inside diameter/outside diameter) and size (outside diameter) both vary through the action of the conical axicon system 8 , without change in the width of the secondary light source of the annular shape.
  • FIG. 5 is an illustration to illustrate the action of the zoom lens on the secondary light source of the annular shape.
  • the secondary light source 30 a of the annular shape formed in the standard state is changed into secondary light source 30 c of an annular shape whose entire shape is similarly enlarged by increasing the focal length of the zoom lens 11 from the minimum to a predetermined value.
  • the width and size (outside diameter) both vary through the action of zoom lens 11 , without change in the annular ratio of the secondary light source of the annular shape.
  • FIG. 6 is an illustration schematically showing the configuration of the first cylindrical lens pair and the second cylindrical lens pair disposed in the optical path between the front lens unit and the rear lens unit of the afocal lens in FIG. 1 .
  • the first cylindrical lens pair 9 and the second cylindrical lens pair 10 are arranged in order from the light source side.
  • the first cylindrical lens pair 9 is composed, for example, of a first cylindrical negative lens 9 a with a negative refracting power in the YZ plane and with no refracting power in the XY plane, and a first cylindrical positive lens 9 b with a positive refracting power in the YZ plane and with no refracting power in the XY plane, which are arranged in order from the light source side.
  • the second cylindrical lens pair 10 is composed, for example, of a second cylindrical negative lens 10 a with a negative refracting power in the XY plane and with no refracting power in the YZ plane, and a second cylindrical positive lens 10 b with a positive refracting power in the XY plane and with no refracting power in the YZ plane, which are arranged in order from the light source side.
  • the first cylindrical negative lens 9 a and the first cylindrical positive lens 9 b are arranged so as to integrally rotate around the optical axis AX.
  • the second cylindrical negative lens 10 a and the second cylindrical positive lens 10 b are arranged so as to integrally rotate around the optical axis AX.
  • the first cylindrical lens pair 9 functions as a beam expander having a power in the Z-direction
  • the second cylindrical lens pair 10 as a beam expander having a power in the X-direction.
  • the power of the first cylindrical lens pair 9 and the power of the second cylindrical lens pair 10 are set to be equal to each other.
  • FIGS. 7 to 9 are illustrations to illustrate the action of the first cylindrical lens pair and the second cylindrical lens pair on the secondary light source of the annular shape.
  • FIG. 7 shows such a setting that the direction of the power of the first cylindrical lens pair 9 makes the angle of +45° around the optical axis AX relative to the Z-axis and that the direction of the power of the second cylindrical lens pair 10 makes the angle of ⁇ 45° around the optical axis AX relative to the Z-axis.
  • the direction of the power of the first cylindrical lens pair 9 is perpendicular to the direction of the power of the second cylindrical lens pair 10 , and the composite system of the first cylindrical lens pair 9 and the second cylindrical lens pair 10 has the Z-directional power and the X-directional power identical to each other.
  • a beam passing through the composite system of the first cylindrical lens pair 9 and the second cylindrical lens pair 10 is subject to enlargement at the same power in the Z-direction and in the X-direction to form the secondary light source of a perfect-circle annular shape on the illumination pupil.
  • FIG. 8 shows such a setting that the direction of the power of the first cylindrical lens pair 9 makes, for example, the angle of +80° around the optical axis AX relative to the Z-axis and that the direction of the power of the second cylindrical lens pair 10 makes, for example, the angle of ⁇ 80° around the optical axis AX relative to the Z-axis. Therefore, the power in the X-direction is greater than the power in the Z-direction in the composite system of the first cylindrical lens pair 9 and the second cylindrical lens pair 10 . As a result, in a horizontally elliptic state shown in FIG.
  • the beam passing through the composite system of the first cylindrical lens pair 9 and the second cylindrical lens pair 10 is subject to enlargement at the power greater in the X-direction than in the Z-direction, whereby the secondary light source of a horizontally long annular shape elongated in the X-direction is formed on the illumination pupil.
  • FIG. 9 shows such a setting that the direction of the power of the first cylindrical lens pair 9 makes, for example, the angle of +10° around the optical axis AX relative to the Z-axis and that the direction of the power of the second cylindrical lens pair 10 makes, for example, the angle of ⁇ 10° around the optical axis AX relative to the Z-axis. Therefore, the power in the Z-direction is greater than the power in the X-direction in the composite system of the first cylindrical lens pair 9 and the second cylindrical lens pair 10 . As a result, in a vertically elliptical state shown in FIG.
  • the beam passing through the composite system of the first cylindrical lens pair 9 and the second cylindrical lens pair 10 is subject to enlargement at the power greater in the Z-direction than in the X-direction, whereby the secondary light source of a vertically long annular shape elongated in the Z-direction is formed on the illumination pupil.
  • the secondary light source can be formed in a horizontally long annular shape according to any one of various aspect ratios.
  • the secondary light source can be formed in a vertically long annular shape according to any one of various aspect ratios.
  • FIG. 10 is a perspective view schematically showing the internal configuration of the polarization monitor shown in FIG. 1 .
  • the polarization monitor 10 is provided with a first beam splitter 13 a disposed in the optical path between the micro fly's eye lens 12 and the condenser optical system 14 .
  • the first beam splitter 13 a has, for example, the form of a non-coated plane-parallel plate made of quartz glass (i.e., raw glass), and has a function of taking reflected light in a polarization state different from a polarization state of incident light, out of the optical path.
  • the light taken out of the optical path by the first beam splitter 13 a is incident to a second beam splitter 13 b .
  • the second beam splitter 13 b has, for example, the form of a non-coated plane-parallel plate made of quartz glass as the first beam splitter 13 a does, and has a function of generating reflected light in a polarization state different from the polarization state of incident light.
  • the polarization monitor is so set that the P-polarized light for the first beam splitter 13 a becomes the S-polarized light for the second beam splitter 13 b and that the S-polarized light for the first beam splitter 13 a becomes the P-polarized light for the second beam splitter 13 b.
  • first light intensity detector 13 c Light transmitted by the second beam splitter 13 b is detected by first light intensity detector 13 c , while light reflected by the second beam splitter 13 b is detected by second light intensity detector 13 d .
  • Outputs from the first light intensity detector 13 c and from the second light intensity detector 13 d are supplied each to a controller (not shown).
  • the controller drives the quarter wave plate 4 a , half wave plate 4 b , and depolarizer 4 c constituting the polarization state converter 4 , according to need.
  • the reflectance for the P-polarized light and the reflectance for the S-polarized light are substantially different in the first beam splitter 13 a and in the second beam splitter 13 b .
  • the reflected light from the first beam splitter 13 a includes the S-polarization component (i.e., the S-polarization component for the first beam splitter 13 a and P-polarization component for the second beam splitter 13 b ), for example, which is approximately 10% of the incident light to the first beam splitter 13 a , and the P-polarization component (i.e., the P-polarization component for the first beam splitter 13 a and S-polarization component for the second beam splitter 13 b ), for example, which is approximately 1% of the incident light to the first beam splitter 13 a.
  • the S-polarization component i.e., the S-polarization component for the first beam splitter 13 a and P-polarization component for the second beam splitter 13 b
  • the P-polarization component i.e., the P
  • the P-polarization component i.e., the P-polarization component for the first beam splitter 13 a and S-polarization component for the second beam splitter 13 b
  • the S-polarization component i.e., the S-polarization component for the first beam splitter 13 a and P-polarization component for the second beam splitter 13 b
  • the first beam splitter 13 a has the function of extracting the reflected light in the polarization state different from the polarization state of the incident light out of the optical path in accordance with its reflection characteristic.
  • the polarization state degree of polarization
  • the polarization state of the illumination light to the mask M, based on the output from the first light intensity detector 13 c (information about the intensity of transmitted light from the second beam splitter 13 b , i.e., information about the intensity of light virtually in the same polarization state as that of the reflected light from the first beam splitter 13 a ).
  • the polarization monitor 13 is so set that the P-polarized light for the first beam splitter 13 a becomes the S-polarized light for the second beam splitter 13 b and that the S-polarized light for the first beam splitter 13 a becomes the P-polarized light for the second beam splitter 13 b .
  • the controller determines that the illumination light to the mask M (eventually, to the wafer W) is not in the desired unpolarized state or linearly polarized state, based on the detection result of the polarization monitor 13 , it drives and adjusts the quarter wave plate 4 a , half wave plate 4 b , and depolarizer 4 c constituting the polarization state converter 4 so that the state of the illumination light to the mask M can be adjusted into the desired unpolarized state or linearly polarized state.
  • Quadrupole illumination can be implemented by setting a diffractive optical element for quadrupole illumination (not shown) in the illumination optical path, instead of the diffractive optical element 5 for annular illumination.
  • the diffractive optical element for quadrupole illumination has such a function that when a parallel beam having a rectangular cross section is incident thereto, it forms a light intensity distribution of a quadrupole shape in the far field thereof. Therefore, the beam passing through the diffractive optical element for quadrupole illumination forms an illumination field of a quadrupole shape consisting of four circular illumination fields centered around the optical axis AX, for example, on the entrance surface of the micro fly's eye lens 12 .
  • the secondary light source of the same quadrupole shape as the illumination field formed on the entrance surface is also formed on the rear focal plane of the micro fly's eye lens 12 .
  • ordinary circular illumination can be implemented by setting a diffractive optical element for circular illumination (not shown) in the illumination optical path, instead of the diffractive optical element 5 for annular illumination.
  • the diffractive optical element for circular illumination has such a function that when a parallel beam having a rectangular cross section is incident thereto, it forms a light intensity distribution of a circular shape in the far field. Therefore, a beam passing through the diffraction optical element for circular illumination forms a circular illumination field centered around the optical axis AX, for example, on the entrance plane of the micro fly's eye lens 12 .
  • the secondary light source of the same circular shape as the illumination field formed on the entrance surface is also formed on the rear focal plane of the micro fly's eye lens 12 .
  • multipole illuminations dipole illumination, octapole illumination, etc.
  • diffractive optical elements for multipole illuminations (not shown), instead of the diffractive optical element 5 for annular illumination.
  • modified illuminations in various forms can be implemented by setting diffractive optical elements with appropriate characteristics (not shown) in the illumination optical path, instead of the diffractive optical element 5 for annular illumination.
  • a diffractive optical element 50 for so-called azimuthally polarized annular illumination can be set, instead of the diffractive optical element 5 for annular illumination, in the illumination optical path, so as to implement the modified illumination in which the beam passing through the secondary light source of the annular shape is set in the azimuthal polarization state, i.e., the azimuthally polarized annular illumination.
  • FIG. 11 is an illustration schematically showing the configuration of the diffractive optical element for azimuthally polarized annular illumination according to the present embodiment.
  • FIG. 12 is an illustration schematically showing the secondary light source of the annular shape set in the azimuthal polarization state.
  • the diffractive optical element 50 for azimuthally polarized annular illumination is constructed in such an arrangement that four types of basic elements 50 A- 50 D having the same cross section of a rectangular shape and having their respective thicknesses different from each other along the direction of transmission of light (Y-direction) (i.e., lengths in the direction of the optical axis) are arranged lengthwise and breadthwise and densely.
  • the thicknesses are set as follows: the thickness of the first basic elements 50 A is the largest, the thickness of the fourth basic elements 50 D the smallest, and the thickness of the second basic elements 50 B is greater than the thickness of the third basic elements 50 C.
  • the diffractive optical element 50 includes an approximately equal number of first basic elements 50 A, second basic elements 50 B, third basic elements 50 C, and fourth basic elements 50 D, and the four types of basic elements 50 A- 50 D are arranged substantially at random. Furthermore, a diffracting surface (indicated by hatching in the drawing) is formed on the mask side of each basic element 50 A- 50 D, and the diffracting surfaces of the respective basic elements 50 A- 50 D are arrayed along one plane perpendicular to the optical axis AX (not shown in FIG. 11 ). As a result, the mask-side surface of the diffractive optical element 50 is planar, while the light-source-side surface of the diffractive optical element 50 is uneven due to the differences among the thicknesses of the respective basic elements 50 A- 50 D.
  • each first basic element 50 A has a function of forming a pair of arc (bow shape) light intensity distributions 32 A symmetric with respect to the axis line of the Z-direction passing the optical axis AX (corresponding to a pair of arc regions 31 A) in the far field 50 E of the diffractive optical element 50 (i.e., in the far field of each basic element 50 A- 50 D).
  • each second basic element 50 B is arranged so as to form a pair of arc (bow shape) regions 31 B symmetric with respect to an axis line obtained by rotating the axis line of the Z-direction passing the optical axis AX, by ⁇ 45° around the Y-axis (or obtained by rotating it by 45° counterclockwise in FIG. 12 ). Namely, as shown in FIG.
  • each second basic element 50 B has a function of forming a pair of arc (bow shape) light intensity distributions 32 B symmetric with respect to the axis line resulting from the ⁇ 45° rotation around the Y-axis, of the axis line of the Z-direction passing the optical axis AX (corresponding to a pair of arc regions 31 B), in the far field 50 E.
  • arc bow shape
  • each third basic element 50 C is arranged to form a pair of arc (bow shape) regions 31 C symmetric with respect to an axis line of the X-direction passing the optical axis AX.
  • each third basic element 50 C has a function of forming a pair of arc (bow shape) light intensity distributions 32 C symmetric with respect to the axis line of the X-direction passing the optical axis AX (corresponding to a pair of arc regions 31 C), in the far field 50 E.
  • each fourth basic element 50 D is arranged so as to form a pair of arc (bow shape) regions 31 D symmetric with respect to an axis line obtained by rotating the axis of the Z-direction passing the optical axis AX by +45° around the Y-axis (i.e., obtained by rotating it by 45° clockwise in FIG. 12 ). Namely, as shown in FIG.
  • each fourth basic element 50 D has a function of forming a pair of arc (bow shape) light intensity distributions 32 D symmetric with respect to the axis line resulting from the +45° rotation around the Y-axis, of the axis line of the Z-direction passing the optical axis AX (corresponding to a pair of arc regions 31 D), in the far field 50 E.
  • the sizes of the respective arc regions 31 A- 31 D are approximately equal to each other, and they form the secondary light source 31 of the annular shape centered around the optical axis AX, while the eight arc regions 31 A- 31 D are not overlapping with each other and not spaced from each other.
  • each basic element 50 A- 50 D is made of crystalline quartz being an optical material with optical activity, and the crystallographic axis of each basic element 50 A- 50 D is set approximately to coincide with the optical axis AX.
  • the optical activity of crystalline quartz will be briefly described below with reference to FIG. 17 .
  • an optical member 35 of a plane-parallel plate shape made of crystalline quartz and in a thickness d is arranged so that its crystallographic axis coincides with the optical axis AX.
  • incident, linearly polarized light emerges in a state in which its-polarization direction is rotated by ⁇ around the optical axis AX.
  • the angle ⁇ of rotation of the polarization direction due to the optical activity of the optical member 35 is represented by Eq (1) below, using the thickness d of the optical member 35 and the rotatory power ⁇ of crystalline quartz.
  • the rotatory power ⁇ of crystalline quartz tends to increase with decrease in the wavelength of used light and, according to the description on page 167 in “Applied Optics II,” the rotatory power ⁇ of crystalline quartz for light having the wavelength of 250.3 nm is 153.9°/mm.
  • the first basic elements 50 A are designed in such a thickness dA that when light of linear polarization having the direction of polarization along the Z-direction is incident thereto, they output light of linear polarization having the polarization direction along a direction resulting from +180° rotation of the Z-direction around the Y-axis, i.e., along the Z-direction, as shown in FIG. 13 .
  • the polarization direction of beams passing through a pair of arc light intensity distributions 32 A formed in the far field 50 E is also the Z-direction
  • the polarization direction of beams passing through a pair of arc regions 31 A shown in FIG. 12 is also the Z-direction.
  • the second basic elements 50 B are designed in such a thickness dB that when light of linear polarization having the polarization direction along the Z-direction is incident thereto, they output light of linear polarization having the polarization direction along a direction resulting from +135° rotation of the Z-direction around the Y-axis, i.e., along a direction resulting from ⁇ 45° rotation of the Z-direction around the Y-axis, as shown in FIG. 14 .
  • the polarization direction of beams passing through a pair of arc light intensity distributions 32 B formed in the far field 50 E is also the direction obtained by rotating the Z-direction by ⁇ 45° around the Y-axis
  • the polarization direction of beams passing through a pair of arc regions 31 A shown in FIG. 12 is also the direction obtained by rotating the Z-direction by ⁇ 45° around the Y-axis.
  • the third basic elements 50 C are designed in such a thickness dC that when light of linear polarization having the polarization direction along the Z-direction is incident thereto, they output light of linear polarization having the polarization direction along a direction resulting from +90° rotation of the Z-direction around the Y-axis, i.e., along the X-direction, as shown in FIG. 15 .
  • the polarization direction of beams passing through a pair of arc light intensity distributions 32 C formed in the far field 50 E is also the X-direction
  • the polarization direction of beams passing through a pair of arc regions 31 C shown in FIG. 12 is also the X-direction.
  • the fourth basic elements 50 D are designed in such a thickness dD that when light of linear polarization having the polarization direction along the Z-direction is incident thereto, they output light of linear polarization having the polarization direction along a direction resulting from +45° rotation of the Z-direction around the Y-axis, as shown in FIG. 16 .
  • the polarization direction of beams passing through a pair of arc light intensity distributions 32 D formed in the far field 50 E is also the direction obtained by rotating the Z-direction by +45° around the Y-axis
  • the polarization direction of beams passing through a pair of arc regions 31 D shown in FIG. 12 is also the direction obtained by rotating the Z-direction by +45° around the Y-axis.
  • the diffractive optical element 50 for azimuthally polarized annular illumination is set in the illumination optical system on the occasion of effecting the azimuthally polarized annular illumination, whereby the light of linear polarization having the polarization direction along the Z-direction is made incident to the diffractive optical element 50 .
  • the secondary light source of the annular shape (illumination pupil distribution of annular shape) 31 is formed on the rear focal plane of the micro fly's eye lens 12 (i.e., on or near the illumination pupil), as shown in FIG. 12 , and the beams passing through the secondary light source 31 of the annular shape are set in the azimuthal polarization state.
  • the beams passing through the respective arc regions 31 A- 31 D constituting the secondary light source 31 of the annular shape turn into the linearly polarized state having the polarization direction substantially coincident with a tangent line to a circle centered around the optical axis AX, at the central position along the circumferential direction of each arc region 31 A- 31 D.
  • the beam transforming element 50 for forming the predetermined light intensity distribution on the predetermined surface on the basis of the incident beam comprises the first basic element 50 A made of the optical material with optical activity, for forming the first region distribution 32 A of the predetermined light intensity distribution on the basis of the incident beam; and the second basic element 50 B made of the optical material with optical activity, for forming the second region distribution 32 B of the predetermined light intensity distribution on the basis of the incident beam, and the first basic element 50 A and the second basic element 50 B have their respective thicknesses different from each other along the direction of transmission of light.
  • the present embodiment is able to form the secondary light source 31 of the annular shape in the azimuthal polarization state, with no substantial loss of light quantity, through the diffracting action and optical rotating action of the diffractive optical element 50 as the beam transforming element, different from the conventional technology giving rise to the large loss of light quantity at the aperture stop.
  • the thickness of the first basic element 50 A and the thickness of the second basic element 50 B are so set that with incidence of linearly polarized light the polarization direction of the linearly polarized light forming the first region distribution 32 A is different from the polarization direction of the linearly polarized light forming the second region distribution 32 B.
  • the first region distribution 32 A and the second region distribution 32 B are positioned in at least a part of a predetermined annular region, which is a predetermined annular region centered around a predetermined point on the predetermined surface, and the beams passing through the first region distribution 32 A and through the second region distribution 32 B have a polarization state in which a principal component is linearly polarized light having the polarization direction along the circumferential direction of the predetermined annular region.
  • the predetermined light intensity distribution has a contour of virtually the same shape as the predetermined annular region
  • the polarization state of the beam passing through the first region distribution 32 A has a linear polarization component substantially coincident with a tangential direction to a circle centered around a predetermined point at the central position along the circumferential direction of the first region distribution 32 A
  • the polarization state of the beam passing through the second region distribution 32 B has a linear polarization component substantially coincident with a tangential direction to a circle centered around a predetermined point at the central position along the circumferential direction of the second region distribution 32 B.
  • the predetermined light intensity distribution is a distribution of a multipole shape in the predetermined annular region
  • the polarization state of the beam passing through the first region distribution has a linear polarization component substantially coincident with a tangential direction to a circle centered around a predetermined point at the central position along the circumferential direction of the first region distribution
  • the polarization state of the beam passing through the second region distribution has a linear polarization component substantially coincident with a tangential direction to a circle centered around a predetermined point at the central position along the circumferential direction of the second region distribution.
  • the first basic element and the second basic element are made of an optical material with an optical rotatory power of not less than 100°/mm for light of a wavelength used.
  • the first basic element and the second basic element are made of crystalline quartz.
  • the beam transforming element preferably includes virtually the same number of first basic elements and second basic elements.
  • the first basic element and the second basic element preferably have diffracting action or refracting action.
  • the first basic element forms at least two first region distributions on the predetermined surface on the basis of the incident beam
  • the second basic element forms at least two second region distributions on the predetermined surface on the basis of the incident beam
  • the beam transforming element further comprises the third basic element 50 C made of the optical material with optical activity, for forming the third region distribution 32 C of the predetermined light intensity distribution on the basis of the incident beam
  • the fourth basic element 50 D made of the optical material with optical activity, for forming the fourth region distribution 32 D of the predetermined light intensity distribution on the basis of the incident beam.
  • the beam transforming element 50 for forming the predetermined light intensity distribution of the shape different from the sectional shape of the incident beam, on the predetermined surface has the diffracting surface or refracting surface for forming the predetermined light intensity distribution on the predetermined surface
  • the predetermined light intensity distribution is a distribution in at least a part of a predetermined annular region, which is a predetermined annular region centered around a predetermined point on the predetermined surface
  • the beam from the beam transforming element passing through the predetermined annular region has a polarization state in which a principal component is linearly polarized light having the direction of polarization along the circumferential direction of the predetermined annular region.
  • the present embodiment different from the conventional technology giving rise to the large loss of light quantity at the aperture stop, is able to form the secondary light source 31 of the annular shape in the azimuthal polarization state, with no substantial loss of light quantity, through the diffracting action and optical rotating action of the diffractive optical element 50 as the beam transforming element.
  • the predetermined light intensity distribution has a contour of a multipole shape or annular shape.
  • the beam transforming element is preferably made of an optical material with optical activity.
  • the illumination optical apparatus of the present embodiment is the illumination optical apparatus for illuminating the surface to be illuminated, based on the beam from the light source, and comprises the above-described beam transforming element for transforming the beam from the light source in order to form the illumination pupil distribution on or near the illumination pupil of the illumination optical apparatus.
  • the illumination optical apparatus of the present embodiment is able to form the illumination pupil distribution of the annular shape in the azimuthal polarization state while well suppressing the loss of light quantity.
  • the beam transforming element is preferably arranged to be replaceable with another beam transforming element having a different characteristic.
  • the apparatus further comprises the wavefront splitting optical integrator disposed in the optical path between the beam transforming element and the surface to be illuminated, and the beam transforming element forms the predetermined light intensity distribution on the entrance surface of the optical integrator on the basis of the incident beam.
  • At least one of the light intensity distribution on the predetermined surface and the polarization state of the beam from the beam transforming element passing through the predetermined annular region is set in consideration of the influence of an optical member disposed in the optical path between the light source and the surface to be illuminated.
  • the polarization state of the beam from the beam transforming element is so set that the light illuminating the surface to be illuminated is in a polarization state in which a principal component is S-polarized light.
  • the exposure apparatus of the present embodiment comprises the above-described illumination optical apparatus for illuminating the mask, and projects the pattern of the mask onto the photosensitive substrate.
  • at least one of the light intensity distribution on the predetermined surface and the polarization state of the beam from the beam transforming element passing through the predetermined annular region is set in consideration of the influence of an optical member disposed in the optical path between the light source and the photosensitive substrate.
  • the polarization state of the beam from the beam transforming element is so set that the light illuminating the photosensitive substrate is in a polarization state in which a principal component is S-polarized light.
  • the exposure method of the present embodiment comprises the illumination step of illuminating the mask by use of the above-described illumination optical apparatus, and the exposure step of projecting the pattern of the mask onto the photosensitive substrate.
  • at least one of the light intensity distribution on the predetermined surface and the polarization state of the beam from the beam transforming element passing through the predetermined annular region is set in consideration of the influence of an optical member disposed in the optical path between the light source and the photosensitive substrate.
  • the polarization state of the beam from the beam transforming element is so set that the light illuminating the photosensitive substrate is in a polarization state in which a principal component is S-polarized light.
  • the illumination optical apparatus of the present embodiment is able to form the illumination pupil distribution of the annular shape in the azimuthal polarization state while well suppressing the loss of light quantity.
  • the exposure apparatus of the present embodiment is able to transcribe the microscopic pattern in an arbitrary direction under an appropriate illumination condition faithfully and with high throughput because it uses the illumination optical apparatus capable of forming the illumination pupil distribution of the annular shape in the azimuthal polarization state while well suppressing the loss of light quantity.
  • the light illuminating the wafer W as a surface to be illuminated is in the polarization state in which the principal component is the S-polarized light.
  • the S-polarized light is linearly polarized light having the direction of polarization along a direction normal to a plane of incidence (i.e., polarized light with the electric vector oscillating in the direction normal to the plane of incidence).
  • the plane of incidence herein is defined as the following plane: when light arrives at a boundary surface of a medium (a surface to be illuminated: surface of wafer W), the plane includes the normal to the boundary plane at the arrival point and the direction of incidence of light.
  • the diffractive optical element 50 for azimuthally polarized annular illumination is constructed by randomly arranging virtually the same number of four types of basic elements 50 A- 50 D with the same rectangular cross section lengthwise and breadthwise and densely.
  • a variety of modification examples can be contemplated as to the number of basic elements of each type, the sectional shape, the number of types, the arrangement, and so on.
  • the secondary light source 31 of the annular shape centered around the optical axis AX is composed of the eight arc regions 31 A- 31 D arrayed without overlapping with each other and without being spaced from each other, using the diffractive optical element 50 consisting of the four types of basic elements 50 A- 50 D.
  • the diffractive optical element 50 consisting of the four types of basic elements 50 A- 50 D.
  • a variety of modification examples can be contemplated as to the number of regions forming the secondary light source of the annular shape, the shape, the arrangement, and so on.
  • a secondary light source 33 a of an octapole shape in the azimuthal polarization state consisting of eight arc (bow shape) regions spaced from each other along the circumferential direction for example, using the diffractive optical element consisting of four types of basic elements.
  • a secondary light source 33 b of a quadrupole shape in the azimuthal polarization state consisting of four arc (bow shape) regions spaced from each other along the circumferential direction for example, using the diffractive optical element consisting of four types of basic elements.
  • the shape of each region is not limited to the arc shape, but it may be, for example, circular, elliptical, or sectorial. Furthermore, as shown in FIG. 19 , it is also possible to form a secondary light source 33 c of an annular shape in the azimuthal polarization state consisting of eight arc regions overlapping with each other along the circumferential direction, for example, using the diffractive optical element consisting of four types of basic elements.
  • the secondary light source may be formed in a hexapole shape in the azimuthal polarization state and of six regions spaced from each other along the circumferential direction, as shown in FIG. 20A .
  • FIG. 20A shows that as shown in FIG.
  • the secondary light source may be formed as one having secondary light source of a multipole shape in the azimuthal polarization state consisting of a plurality of regions spaced from each other along the circumferential direction, and a secondary light source on the center pole in the unpolarized state or linearly polarized state consisting of a region on the optical axis. Furthermore, the secondary light source may also be formed in a dipole shape in the azimuthal polarization state and of two regions spaced from each other along the circumferential direction.
  • the four types of basic elements 50 A- 50 D are individually formed, and the diffractive optical element 50 is constructed by combining these elements.
  • the diffractive optical element 50 can also be integrally constructed in such a manner that a crystalline quartz substrate is subjected, for example, to etching to form the exit-side diffracting surfaces and the entrance-side uneven surfaces of the respective basic elements 50 A- 50 D.
  • each basic element 50 A- 50 D (therefore, the diffractive optical element 50 ) is made of crystalline quartz.
  • each basic element can also be made of another appropriate optical material with optical activity.
  • use of an optical material with a low rotatory power is undesirable because the thickness necessary for achieving the required rotation angle of the polarization direction becomes too large, so as to cause the loss of light quantity.
  • the aforementioned embodiment is arranged to form the illumination pupil distribution of the annular shape (secondary light source), but, without having to be limited to this, the illumination pupil distribution of a circular shape can also be formed on or near the illumination pupil.
  • the illumination pupil distribution of the annular shape and the illumination pupil distribution of the multipole shape it is also possible to implement a so-called annular illumination with the center pole and a multipole illumination with the center pole, for example, by forming a center region distribution including the optical axis.
  • the illumination pupil distribution in the azimuthal polarization state is formed on or near the illumination pupil.
  • the polarization direction can vary because of polarization aberration (retardation) of an optical system (the illumination optical system or the projection optical system) closer to the wafer than the diffractive optical element as the beam transforming element.
  • reflected light can have a phase difference in each polarization direction because of a polarization characteristic of a reflecting member disposed in the optical system (the illumination optical system or the projection optical system) closer to the wafer than the beam transforming element.
  • the reflectance in the reflecting member can vary depending upon the polarization direction, because of a polarization characteristic of a reflecting member disposed in the optical system (the illumination optical system or the projection optical system) closer to the wafer than the beam transforming element.
  • the same technique can also be similarly applied to cases where the transmittance in the optical system closer to the wafer than the beam transforming element varies depending upon the polarization direction.
  • the light-source-side surface of the diffractive optical element 50 is of the uneven shape with level differences according to the differences among the thicknesses of respective basic elements 50 A- 50 D. Then the surface on the light source side (entrance side) of the diffractive optical element 50 can also be formed in a planar shape, as shown in FIG. 21 , by adding a compensation member 36 on the entrance side of the basic elements except for the first basic elements 50 A with the largest thickness, i.e., on the entrance side of the second basic elements 50 B, third basic elements 50 C, and fourth basic elements 50 D. In this case, the compensation member 36 is made of an optical material without optical activity.
  • the aforementioned embodiment shows the example wherein the beam passing through the illumination pupil distribution formed on or near the illumination pupil has only the linear polarization component along the circumferential direction.
  • the expected effect of the present invention can be achieved as long as the polarization state of the beam passing through the illumination pupil distribution is a state in which the principal component is linearly polarized light having the polarization direction along the circumferential direction.
  • the foregoing embodiment uses the diffractive optical element consisting of the plural types of basic elements having the diffracting action, as the beam transforming element for forming the light intensity distribution of the shape different from the sectional shape of the incident beam, on the predetermined plane, based on the incident beam.
  • the beam transforming element a refracting optical element, for example, consisting of plural types of basic elements having refracting surfaces virtually optically equivalent to the diffracting surfaces of the respective basic elements, i.e., consisting of plural types of basic elements having the refracting action.
  • the exposure apparatus is able to produce microdevices (semiconductor elements, image pickup elements, liquid crystal display elements, thin-film magnetic heads, etc.) by illuminating a mask (reticle) by the illumination optical apparatus (illumination step) and projecting a pattern for transcription formed on the mask, onto a photosensitive substrate by use of the projection optical system (exposure step).
  • microdevices semiconductor elements, image pickup elements, liquid crystal display elements, thin-film magnetic heads, etc.
  • the first step 301 in FIG. 22 is to deposit a metal film on each of wafers in one lot.
  • the next step 302 is to apply a photoresist onto the metal film on each wafer in the lot.
  • step 303 is to sequentially transcribe an image of a pattern on a mask into each shot area on each wafer in the lot, through the projection optical system by use of the exposure apparatus of the foregoing embodiment.
  • step 304 is to perform development of the photoresist on each wafer in the lot, and step 305 thereafter is to perform etching with the resist pattern as a mask on each wafer in the lot, thereby forming a circuit pattern corresponding to the pattern on the mask, in each shot area on each wafer.
  • devices such as semiconductor elements are produced through execution of formation of circuit patterns in upper layers and others.
  • the semiconductor device production method as described above permits us to produce the semiconductor devices with extremely fine circuit patterns at high throughput.
  • pattern forming step 401 is to execute a so-called photolithography step of transcribing a pattern on a mask onto a photosensitive substrate (a glass substrate coated with a resist or the like) by use of the exposure apparatus of the foregoing embodiment.
  • the predetermined patterns including a number of electrodes and others are formed on the photosensitive substrate.
  • the exposed substrate is subjected to steps such as a development step, an etching step, a resist removing step, etc., to form the predetermined patterns on the substrate, followed by next color filter forming step 402 .
  • the next color filter forming step 402 is to form a color filter in which a number of sets of three dots corresponding to R (Red), G (Green), and B (Blue) are arrayed in a matrix, or in which a plurality of sets of filters of three stripes of R, Q and B are arrayed in the direction of horizontal scan lines.
  • cell assembly step 403 is carried out.
  • the cell assembly step 403 is to assemble a liquid crystal panel (liquid crystal cell), using the substrate with the predetermined patterns obtained in the pattern forming step 401 , the color filter obtained in the color filter forming step 402 , and so on.
  • a liquid crystal is poured into the space between the substrate with the predetermined patterns obtained in the pattern forming step 401 and the color filter obtained in the color filter forming step 402 to produce the liquid crystal panel (liquid crystal cell).
  • module assembly step 404 is carried out to attach such components as an electric circuit, a backlight, and so on for implementing the display operation of the assembled liquid crystal panel (liquid crystal cell), to complete the liquid crystal display element.
  • the production method of the liquid crystal display element described above permits us to produce the liquid crystal display elements with extremely fine circuit patterns at high throughput.
  • the foregoing embodiment is arranged to use the KrF excimer laser light (wavelength: 248 nm) or the ArF excimer laser light (wavelength: 193 nm) as the exposure light, but, without having to be limited to this, the present invention can also be applied to other appropriate laser light sources, e.g., an F 2 laser light source for supplying laser light of the wavelength of 157 nm.
  • the foregoing embodiment described the present invention, using the exposure apparatus with the illumination optical apparatus as an example, but it is apparent that the present invention can be applied to ordinary illumination optical apparatus for illuminating the surface to be illuminated, except for the mask and wafer.
  • the so-called liquid immersion method which is a technique of filling a medium (typically, a liquid) with a refractive index larger than 1.1 in the optical path between the projection optical system and the photosensitive substrate.
  • the technique of filling the liquid in the optical path between the projection optical system and the photosensitive substrate can be selected from the technique of locally filling the liquid as disclosed in PCT International Publication No. WO99/49504, the technique of moving a stage holding a substrate as an exposure target in a liquid bath as disclosed in Japanese Patent Application Laid-Open No.
  • the liquid is preferably one that is transparent to the exposure light, that has the refractive index as high as possible, and that is stable against the projection optical system and the photoresist applied to the surface of the substrate; for example, where the exposure light is the KrF excimer laser light or the ArF excimer laser light, pure water or deionized water can be used as the liquid.
  • the liquid can be a fluorinated liquid capable of transmitting the F 2 laser light, e.g., fluorinated oil or perfluoropolyether (PFPE).

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Polarising Elements (AREA)
  • Microscoopes, Condenser (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Liquid Crystal (AREA)
  • Lenses (AREA)

Abstract

A beam transforming element for forming a predetermined light intensity distribution on a predetermined surface on the basis of an incident beam includes a first basic element made of an optical material with optical activity, for forming a first region distribution of the predetermined light intensity distribution on the basis of the incident beam; and a second basic element made of an optical material with optical activity, for forming a second region distribution of the predetermined light intensity distribution on the basis of the incident beam, wherein the first basic element and the second basic element have their respective thicknesses different from each other along a direction of transmission of light.

Description

    CROSS-REFERENCE TO RELATED APPLICATIONS
  • This is a continuation of application Ser. No. 11/319,057, filed Dec. 28, 2005, which is a continuation-in-part application of Application No. PCT/JP2004/016247 filed on Nov. 2, 2004. The disclosure of the prior application is hereby incorporated by reference herein in its entirety.
  • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The present invention relates to a beam transforming element, illumination optical apparatus, exposure apparatus, and exposure method and, more particularly, to an illumination optical apparatus suitably applicable to exposure apparatus used in production of microdevices such as semiconductor elements, image pickup elements, liquid crystal display elements, and thin-film magnetic heads by lithography.
  • 2. Related Background Art
  • In the typical exposure apparatus of this type, a beam emitted from a light source travels through a fly's eye lens as an optical integrator to form a secondary light source as a substantial surface illuminant consisting of a number of light sources. Beams from the secondary light source (generally, an illumination pupil distribution formed on or near an illumination pupil of the illumination optical apparatus) are limited through an aperture stop disposed near the rear focal plane of the fly's eye lens and then enter a condenser lens.
  • The beams condensed by the condenser lens superposedly illuminate a mask on which a predetermined pattern is formed. The light passing through the pattern of the mask is focused on a wafer through a projection optical system. In this manner, the mask pattern is projected for exposure (or transcribed) onto the wafer. The pattern formed on the mask is a highly integrated pattern, and, in order to accurately transcribe this microscopic pattern onto the wafer, it is indispensable to obtain a uniform illuminance distribution on the wafer.
  • For example, Japanese Patent No. 3246615 owned by the same Applicant of the present application discloses the following technology for realizing the illumination condition suitable for faithful transcription of the microscopic pattern in arbitrary directions: the secondary light source is formed in an annular shape on the rear focal plane of the fly's eye lens and the beams passing the secondary light source of the annular shape are set to be in a linearly polarized state with a direction of polarization along the circumferential direction thereof (hereinafter referred to as a “azimuthal polarization state”).
  • SUMMARY OF THE INVENTION
  • An object of the present invention is to form an illumination pupil distribution of an annular shape in a azimuthal polarization state while well suppressing the loss of light quantity. Another object of the present invention is to transcribe a microscopic pattern in an arbitrary direction under an appropriate illumination condition faithfully and with high throughput, by forming an illumination pupil distribution of an annular shape in a azimuthal polarization state while well suppressing the loss of light quantity.
  • In order to achieve the above objects, a first aspect of the present embodiment is to provide a beam transforming element for forming a predetermined light intensity distribution on a predetermined surface on the basis of an incident beam, comprising:
  • a first basic element made of an optical material with optical activity, for forming a first region distribution of the predetermined light intensity distribution on the basis of the incident beam; and
  • a second basic element made of an optical material with optical activity, for forming a second region distribution of the predetermined light intensity distribution on the basis of the incident beam,
  • wherein the first basic element and the second basic element have their respective thicknesses different from each other along a direction of transmission of light.
  • A second aspect of the present embodiment is to provide a beam transforming element for, based on an incident beam, forming a predetermined light intensity distribution of a shape different from a sectional shape of the incident beam, on a predetermined surface, comprising:
  • a diffracting surface or a refracting surface for forming the predetermined light intensity distribution on the predetermined surface,
  • wherein the predetermined light intensity distribution is a distribution in at least a part of a predetermined annular region, which is a predetermined annular region centered around a predetermined point on the predetermined surface, and
  • wherein a beam from the beam transforming element passing through the predetermined annular region has a polarization state in which a principal component is linearly polarized light having a direction of polarization along a circumferential direction (azymuthally direction) of the predetermined annular region.
  • A third aspect of the present invention is to provide an illumination optical apparatus for illuminating a surface to be illuminated, based on a beam from a light source, comprising:
      • the beam transforming element of the first aspect or the second aspect for transforming the beam from the light source in order to form an illumination pupil distribution on or near an illumination pupil of the illumination optical apparatus.
  • A fourth aspect of the present embodiment is to provide an exposure apparatus comprising the illumination optical apparatus of the third aspect for illuminating a pattern,
  • the exposure apparatus being arranged to project the pattern onto a photosensitive substrate.
  • A fifth aspect of the present embodiment is to provide an exposure method comprising: an illumination step of illuminating a pattern by use of the illumination optical apparatus of the third aspect; and an exposure step of projecting the pattern onto a photosensitive substrate.
  • The illumination optical apparatus of the present embodiment, different from the conventional technology giving rise to the large loss of light quantity at the aperture stop, is able to form the illumination pupil distribution of the annular shape in the azimuthal polarization state, with no substantial loss of light quantity, by diffraction and optical rotating action of the diffractive optical element as the beam transforming element. Namely, the illumination optical apparatus of the present invention is able to form the illumination pupil distribution of the annular shape in the azimuthal polarization state while well suppressing the loss of light quantity.
  • Since the exposure apparatus and exposure method using the illumination optical apparatus of the present embodiment are arranged to use the illumination optical apparatus capable of forming the illumination pupil distribution of the annular shape in the azimuthal polarization state while well suppressing the loss of light quantity, they are able to transcribe a microscopic pattern in an arbitrary direction under an appropriate illumination condition faithfully and with high throughput and, in turn, to produce good devices with high throughput.
  • The present invention will be more fully understood from the detailed description given hereinbelow and the accompanying drawings, which are given by way of illustration only and are not to be considered as limiting the embodiment.
  • Further scope of applicability of the embodiment will become apparent from the detailed description given hereinafter. However, it should be understood that the detailed description and specific examples, while indicating preferred embodiments of the invention, are given by way of illustration only, since various changes and modifications within the spirit and scope of the invention will be apparent to those skilled in the art from this detailed description.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is an illustration schematically showing a configuration of an exposure apparatus with an illumination optical apparatus according to an embodiment of the present invention.
  • FIG. 2 is an illustration showing a secondary light source of an annular shape formed in annular illumination.
  • FIG. 3 is an illustration schematically showing a configuration of a conical axicon system disposed in an optical path between a front lens unit and a rear lens unit of an afocal lens in FIG. 1.
  • FIG. 4 is an illustration to illustrate the action of the conical axicon system on the secondary light source of the annular shape.
  • FIG. 5 is an illustration to illustrate the action of a zoom lens on the secondary light source of the annular shape.
  • FIG. 6 is an illustration schematically showing a first cylindrical lens pair and a second cylindrical lens pair disposed in an optical path between the front lens unit and the rear lens unit of the afocal lens in FIG. 1.
  • FIG. 7 is a first drawing to illustrate the action of the first cylindrical lens pair and the second cylindrical lens pair on the secondary light source of the annular shape.
  • FIG. 8 is a second drawing to illustrate the action of the first cylindrical lens pair and the second cylindrical lens pair on the secondary light source of the annular shape.
  • FIG. 9 is a third drawing to illustrate the action of the first cylindrical lens pair and the second cylindrical lens pair on the secondary light source of the annular shape.
  • FIG. 10 is a perspective view schematically showing an internal configuration of a polarization monitor in FIG. 1.
  • FIG. 11 is an illustration schematically showing a configuration of a diffractive optical element for azimuthally polarized annular illumination according to an embodiment of the present invention.
  • FIG. 12 is an illustration schematically showing a secondary light source of an annular shape set in the azimuthal polarization state.
  • FIG. 13 is an illustration to illustrate the action of a first basic element.
  • FIG. 14 is an illustration to illustrate the action of a second basic element.
  • FIG. 15 is an illustration to illustrate the action of a third basic element.
  • FIG. 16 is an illustration to illustrate the action of a fourth basic element.
  • FIG. 17 is an illustration to illustrate the optical activity of crystalline quartz.
  • FIGS. 18A and 18B are illustrations showing octapole secondary light sources in the azimuthal polarization state consisting of eight arc regions spaced from each other along the circumferential direction and a quadrupole secondary light source in the azimuthal polarization state consisting of four arc regions spaced from each other along the circumferential direction.
  • FIG. 19 is an illustration showing a secondary light source of an annular shape in the azimuthal polarization state consisting of eight arc regions overlapping with each other along the circumferential direction.
  • FIGS. 20A and 20B are illustrations showing hexapole secondary light sources in the azimuthal polarization state consisting of six arc regions spaced from each other along the circumferential direction and a secondary light source in the azimuthal polarization state having a plurality of regions spaced from each other along the circumferential direction and a region on the optical axis.
  • FIG. 21 is an illustration showing an example in which an entrance-side surface of a diffractive optical element for azimuthally polarized annular illumination is planar.
  • FIG. 22 is a flowchart of a procedure of obtaining semiconductor devices as microdevices.
  • FIG. 23 is a flowchart of a procedure of obtaining a liquid crystal display element as a microdevice.
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • Embodiments of the present invention will be described based on the accompanying drawings.
  • FIG. 1 is an illustration schematically showing a configuration of an exposure apparatus with an illumination optical apparatus according to an embodiment of the present invention. In FIG. 1, the Z-axis is defined along a direction of a normal to a wafer W being a photosensitive substrate, the Y-axis along a direction parallel to the plane of FIG. 1 in the plane of the wafer W, and the X-axis along a direction of a normal to the plane of FIG. 1 in the plane of wafer W. The exposure apparatus of the present embodiment is provided with a light source 1 for supplying exposure light (illumination light).
  • The light source 1 can be, for example, a KrF excimer laser light source for supplying light with the wavelength of 248 nm, an ArF excimer laser light source for supplying light with the wavelength of 193 nm, or the like. A nearly parallel beam emitted along the Z-direction from the light source 1 has a cross section of a rectangular shape elongated along the X-direction, and is incident to a beam expander 2 consisting of a pair of lenses 2 a and 2 b. The lenses 2 a and 2 b have a negative refracting power and a positive refracting power, respectively, in the plane of FIG. 1 (or in the YZ plane). Therefore, the beam incident to the beam expander 2 is enlarged in the plane of FIG. 1 and shaped into a beam having a cross section of a predetermined rectangular shape.
  • The nearly parallel beam passing through the beam expander 2 as a beam shaping optical system is deflected into the Y-direction by a bending mirror 3, and then travels through a quarter wave plate 4 a, a half wave plate 4 b, a depolarizer (depolarizing element) 4 c, and a diffractive optical element 5 for annular illumination to enter an afocal lens 6. Here the quarter wave plate 4 a, half wave plate 4 b, and depolarizer 4 c constitute a polarization state converter 4, as described later. The afocal lens 6 is an afocal system (afocal optic) set so that the front focal position thereof approximately coincides with the position of the diffractive optical element 5 and so that the rear focal position thereof approximately coincides with the position of a predetermined plane 7 indicated by a dashed line in the drawing. In general, a diffractive optical element is constructed by forming level differences with the pitch of approximately the wavelength of exposure light (illumination light) in a substrate and has the action of diffracting an incident beam at desired angles. Specifically, the diffractive optical element 5 for annular illumination has the following function: when a parallel beam having a rectangular cross section is incident thereto, it forms a light intensity distribution of an annular shape in its far field (or Fraunhofer diffraction region). Therefore, the nearly parallel beam incident to the diffractive optical element 5 as a beam transforming element forms a light intensity distribution of an annular shape on the pupil plane of the afocal lens 6 and then emerges as a nearly parallel beam from the afocal lens 6.
  • In an optical path between front lens unit 6 a and rear lens unit 6 b of the afocal lens 6 there are a conical axicon system 8, a first cylindrical lens pair 9, and a second cylindrical lens pair 10 arranged in order from the light source side on or near the pupil plane of the afocal lens, and the detailed configuration and action thereof will be described later. For easier description, the fundamental configuration and action will be described below, in disregard of the action of the conical axicon system 8, first cylindrical lens pair 9, and second cylindrical lens pair 10.
  • The beam through the afocal lens 6 travels through a zoom lens 11 for variation of σ-value and then enters a micro fly's eye lens (or fly's eye lens) 12 as an optical integrator. The micro fly's eye lens 12 is an optical element consisting of a number of micro lenses with a positive refracting power arranged lengthwise and breadthwise and densely. In general, a micro fly's eye lens is constructed, for example, by forming a micro lens group by etching of a plane-parallel plate.
  • Here each micro lens forming the micro fly's eye lens is much smaller than each lens element forming a fly's eye lens. The micro fly's eye lens is different from the fly's eye lens consisting of lens elements spaced from each other, in that a number of micro lenses (micro refracting surfaces) are integrally formed without being separated from each other. In the sense that lens elements with a positive refracting power are arranged lengthwise and breadthwise, however, the micro fly's eye lens is a wavefront splitting optical integrator of the same type as the fly's eye lens. Detailed explanation concerning the micro fly's eye lens capable of being used in the present invention is disclosed, for example, in U.S. Pat. No. 6,913,373(B2) which is incorporated herein by reference in its entirety.
  • The position of the predetermined plane 7 is arranged near the front focal position of the zoom lens 11, and the entrance surface of the micro fly's eye lens 12 is arranged near the rear focal position of the zoom lens 11. In other words, the zoom lens 11 arranges the predetermined plane 7 and the entrance surface of the micro fly's eye lens 12 substantially in the relation of Fourier transform and eventually arranges the pupil plane of the afocal lens 6 and the entrance surface of the micro fly's eye lens 12 approximately optically conjugate with each other.
  • Accordingly, for example, an illumination field of an annular shape centered around the optical axis AX is formed on the entrance surface of the micro fly's eye lens 12, as on the pupil plane of the afocal lens 6. The entire shape of this annular illumination field similarly varies depending upon the focal length of the zoom lens 11. Each micro lens forming the micro fly's eye lens 12 has a rectangular cross section similar to a shape of an illumination field to be formed on a mask M (eventually, a shape of an exposure region to be formed on a wafer W).
  • The beam incident to the micro fly's eye lens 12 is two-dimensionally split by a number of micro lenses to form on its rear focal plane (eventually on the illumination pupil) a secondary light source having much the same light intensity distribution as the illumination field formed by the incident beam, i.e., a secondary light source consisting of a substantial surface illuminant of an annular shape centered around the optical axis AX, as shown in FIG. 2. Beams from the secondary light source formed on the rear focal plane of the micro fly's eye lens 12 (in general, an illumination pupil distribution formed on or near the pupil plane of the illumination optical apparatus) travel through beam splitter 13 a and condenser optical system 14 to superposedly illuminate a mask blind 15.
  • In this manner, an illumination field of a rectangular shape according to the shape and focal length of each micro lens forming the micro fly's eye lens 12 is formed on the mask blind 15 as an illumination field stop. The internal configuration and action of polarization monitor 13 incorporating a beam splitter 13 a will be described later. Beam through a rectangular aperture (light transmitting portion) of the mask blind 15 are subject to light condensing action of imaging optical system 16 and thereafter superposedly illuminate the mask M on which a predetermined pattern is formed.
  • Namely, the imaging optical system 16 forms an image of the rectangular aperture of the mask blind 15 on the mask M. A beam passing through the pattern of mask M travels through a projection optical system PL to form an image of the mask pattern on the wafer W being a photosensitive substrate. In this manner, the pattern of the mask M is sequentially printed in each exposure area on the wafer W through full-wafer exposure or scan exposure with two-dimensional drive control of the wafer W in the plane (XY plane) perpendicular to the optical axis AX of the projection optical system PL.
  • In the polarization state converter 4, the quarter wave plate 4 a is arranged so that its crystallographic axis is rotatable around the optical axis AX, and it transforms incident light of elliptical polarization into light of linear polarization. The half wave plate 4 b is arranged so that its crystallographic axis is rotatable around the optical axis AX, and it changes the plane of polarization of linearly polarized light incident thereto. The depolarizer 4 c is composed of a wedge-shaped crystalline quartz prism (not shown) and a wedge-shaped fused sillica prism (not shown) having complementary shapes. The crystalline quartz prism and the fussed sillica prism are constructed as an integral prism assembly so as to be set into and away from the illumination optical path.
  • Where the light source 1 is the KrF excimer laser light source or the ArF excimer laser light source, light emitted from these light sources typically has the degree of polarization of 95% or more and light of almost linear polarization is incident to the quarter wave plate 4 a. However, if a right-angle prism as a back-surface reflector is interposed in the optical path between the light source 1 and the polarization state converter 4, the linearly polarized light will be changed into elliptically polarized light by virtue of total reflection in the right-angle prism unless the plane of polarization of the incident, linearly polarized light agrees with the P-polarization plane or S-polarization plane.
  • In the case of the polarization state converter 4, for example, even if light of elliptical polarization is incident thereto because of the total reflection in the right-angle prism, light of linear polarization transformed by the action of the quarter wave plate 4 a will be incident to the half wave plate 4 b. Where the crystallographic axis of the half wave plate 4 b is set at an angle of 0° or 90° relative to the plane of polarization of the incident, linearly polarized light, the light of linear polarization incident to the half wave plate 4 b will pass as it is, without change in the plane of polarization.
  • Where the crystallographic axis of the half wave plate 4 b is set at an angle of 45° relative to the plane of polarization of the incident, linearly polarized light, the light of linear polarization incident to the half wave plate 4 b will be transformed into light of linear polarization with change of polarization plane of 90°. Furthermore, where the crystallographic axis of the crystalline quartz prism in the depolarizer 4 c is set at an angle of 45° relative to the polarization plane of the incident, linearly polarized light, the light of linear polarization incident to the crystalline quartz prism will be transformed (or depolarized) into light in an unpolarized state.
  • The polarization state converter 4 is arranged as follows: when the depolarizer 4 c is positioned in the illumination optical path, the crystallographic axis of the crystalline quartz prism makes the angle of 45° relative to the polarization plane of the incident, linearly polarized light. Incidentally, where the crystallographic axis of the crystalline quartz prism is set at the angle of 0° or 90° relative to the polarization plane of the incident, linearly polarized light, the light of linear polarization incident to the crystalline quartz prism will pass as it is, without change of the polarization plane. Where the crystallographic axis of the half wave plate 4 b is set at an angle of 22.5° relative to the polarization plane of incident, linearly polarized light, the light of linear polarization incident to the half wave plate 4 b will be transformed into light in an unpolarized state including a linear polarization component directly passing without change of the polarization plane and a linear polarization component with the polarization plane rotated by 90°.
  • The polarization state converter 4 is arranged so that light of linear polarization is incident to the half wave plate 4 b, as described above, and, for easier description hereinafter, it is assumed that light of linear polarization having the direction of polarization (direction of the electric field) along the Z-axis in FIG. 1 (hereinafter referred to as “Z-directionally polarized light”) is incident to the half wave plate 4 b. When the depolarizer 4 c is positioned in the illumination optical path and when the crystallographic axis of the half wave plate 4 b is set at the angle of 0° or 90° relative to the polarization plane (direction of polarization) of the Z-directionally polarized light incident thereto, the light of Z-directional polarization incident to the half wave plate 4 b passes as kept as Z-directionally polarized light without change of the polarization plane and enters the crystalline quartz prism in the depolarizer 4 c. Since the crystallographic axis of the crystalline quartz prism is set at the angle of 45° relative to the polarization plane of the Z-directionally polarized light incident thereto, the light of Z-directional polarization incident to the crystalline quartz prism is transformed into light in an unpolarized state.
  • The light depolarized through the crystalline quartz prism travels through the quartz prism as a compensator for compensating the traveling direction of the light and is incident into the diffractive optical element 5 while being in the depolarized state. On the other hand, if the crystallographic axis of the half wave plate 4 b is set at the angle of 45° relative to the polarization plane of the Z-directionally polarized light incident thereto, the light of Z-directional polarization incident to the half wave plate 4 b will be rotated in the polarization plane by 90° and transformed into light of linear polarization having the polarization direction (direction of the electric field) along the X-direction in FIG. 1 (hereinafter referred to as “X-directionally polarized light”) and the X-directionally polarized light will be incident to the crystalline quartz prism in the depolarizer 4 c. Since the crystallographic axis of the crystalline quartz prism is set at the angle of 45° relative to the polarization plane of the incident, X-directionally polarized light as well, the light of X-directional polarization incident to the crystalline quartz prism is transformed into light in the depolarized state, and the light travels through the quartz prism to be incident in the depolarized state into the diffractive optical element 5.
  • In contrast, when the depolarizer 4 c is set away from the illumination optical path, if the crystallographic axis of the half wave plate 4 b is set at the angle of 0° or 90° relative to the polarization plane of the Z-directionally polarized light incident thereto, the light of Z-directional polarization incident to the half wave plate 4 b will pass as kept as Z-directionally polarized light without change of the polarization plane, and will be incident in the Z-directionally polarized state into the diffractive optical element 5. If the crystallographic axis of the half wave plate 4 b is set at the angle of 45° relative to the polarization plane of the Z-directionally polarized light incident thereto on the other hand, the light of Z-directional polarization incident to the half wave plate 4 b will be transformed into light of X-directional polarization with the polarization plane rotated by 90°, and will be incident in the X-directionally polarized state into the diffractive optical element 5.
  • In the polarization state converter 4, as described above, the light in the depolarized state can be made incident to the diffractive optical element 5 when the depolarizer 4 c is set and positioned in the illumination optical path. When the depolarizer 4 c is set away from the illumination optical path and when the crystallographic axis of the half wave plate 4 b is set at the angle of 0° or 90° relative to the polarization plane of the Z-directionally polarized light incident thereto, the light in the Z-directionally polarized state can be made incident to the diffractive optical element 5. Furthermore, when the depolarizer 4 c is set away from the illumination optical path and when the crystallographic axis of the half wave plate 4 b is set at the angle of 45° relative to the polarization plane of the Z-directionally polarized light incident thereto, the light in the X-directionally polarized state can be made incident to the diffractive optical element 5.
  • In other words, the polarization state converter 4 is able to switch the polarization state of the incident light into the diffractive optical element 5 (a state of polarization of light to illuminate the mask M and wafer W in use of an ordinary diffractive optical element except for the diffractive optical element for azimuthally polarized annular illumination according to the present invention as will be described later) between the linearly polarized state and the unpolarized state through the action of the polarization state converter consisting of the quarter wave plate 4 a, half wave plate 4 b, and depolarizer 4 c, and, in the case of the linearly polarized state, it is able to switch between mutually orthogonal polarization states (between the Z-directional polarization and the X-directional polarization).
  • FIG. 3 is an illustration schematically showing the configuration of the conical axicon system disposed in the optical path between the front lens unit and the rear lens unit of the afocal lens in FIG. 1. The conical axicon system 8 is composed of a first prism member 8 a whose plane is kept toward the light source and whose refracting surface of a concave conical shape is kept toward the mask, and a second prism member 8 b whose plane is kept toward the mask and whose refracting surface of a convex conical shape is kept toward the light source, in order from the light source side.
  • The refracting surface of the concave conical shape of the first prism member 8 a and the refracting surface of the convex conical shape of the second prism member 8 b are formed in a complementary manner so as to be able to be brought into contact with each other. At least one of the first prism member 8 a and the second prism member 8 b is arranged movable along the optical axis AX, so that the spacing can be varied between the refracting surface of the concave conical shape of the first prism member 8 a and the refracting surface of the convex conical shape of the second prism member 8 b.
  • In a state in which the refracting surface of the concave conical shape of the first prism member 8 a and the refracting surface of the convex conical shape of the second prism member 8 b are in contact with each other, the conical axicon system 8 functions as a plane-parallel plate and has no effect on the secondary light source of the annular shape formed. However, when the refracting surface of the concave conical shape of the first prism member 8 a and the refracting surface of the convex conical shape of the second prism member 8 b are spaced from each other, the conical axicon system 8 functions a so-called beam expander. Therefore, the angle of the incident beam to the predetermined plane 7 varies according to change in the spacing of the conical axicon system 8.
  • FIG. 4 is an illustration to illustrate the action of the conical axicon system on the secondary light source of the annular shape. With reference to FIG. 4, the secondary light source 30 a of the minimum annular shape formed in a state where the spacing of the conical axicon system 8 is zero and where the focal length of the zoom lens 11 is set at the minimum (this state will be referred to hereinafter as a “standard state”) is changed into secondary light source 30 b of an annular shape with the outside diameter and inside diameter both enlarged and without change in the width (half of the difference between the inside diameter and the outside diameter: indicated by arrows in the drawing) when the spacing of the conical axicon system 8 is increased from zero to a predetermined value. In other words, an annular ratio (inside diameter/outside diameter) and size (outside diameter) both vary through the action of the conical axicon system 8, without change in the width of the secondary light source of the annular shape.
  • FIG. 5 is an illustration to illustrate the action of the zoom lens on the secondary light source of the annular shape. With reference to FIG. 5, the secondary light source 30 a of the annular shape formed in the standard state is changed into secondary light source 30 c of an annular shape whose entire shape is similarly enlarged by increasing the focal length of the zoom lens 11 from the minimum to a predetermined value. In other words, the width and size (outside diameter) both vary through the action of zoom lens 11, without change in the annular ratio of the secondary light source of the annular shape.
  • FIG. 6 is an illustration schematically showing the configuration of the first cylindrical lens pair and the second cylindrical lens pair disposed in the optical path between the front lens unit and the rear lens unit of the afocal lens in FIG. 1. In FIG. 6, the first cylindrical lens pair 9 and the second cylindrical lens pair 10 are arranged in order from the light source side. The first cylindrical lens pair 9 is composed, for example, of a first cylindrical negative lens 9 a with a negative refracting power in the YZ plane and with no refracting power in the XY plane, and a first cylindrical positive lens 9 b with a positive refracting power in the YZ plane and with no refracting power in the XY plane, which are arranged in order from the light source side.
  • On the other hand, the second cylindrical lens pair 10 is composed, for example, of a second cylindrical negative lens 10 a with a negative refracting power in the XY plane and with no refracting power in the YZ plane, and a second cylindrical positive lens 10 b with a positive refracting power in the XY plane and with no refracting power in the YZ plane, which are arranged in order from the light source side. The first cylindrical negative lens 9 a and the first cylindrical positive lens 9 b are arranged so as to integrally rotate around the optical axis AX. Similarly, the second cylindrical negative lens 10 a and the second cylindrical positive lens 10 b are arranged so as to integrally rotate around the optical axis AX.
  • In the state shown in FIG. 6, the first cylindrical lens pair 9 functions as a beam expander having a power in the Z-direction, and the second cylindrical lens pair 10 as a beam expander having a power in the X-direction. The power of the first cylindrical lens pair 9 and the power of the second cylindrical lens pair 10 are set to be equal to each other.
  • FIGS. 7 to 9 are illustrations to illustrate the action of the first cylindrical lens pair and the second cylindrical lens pair on the secondary light source of the annular shape. FIG. 7 shows such a setting that the direction of the power of the first cylindrical lens pair 9 makes the angle of +45° around the optical axis AX relative to the Z-axis and that the direction of the power of the second cylindrical lens pair 10 makes the angle of −45° around the optical axis AX relative to the Z-axis.
  • Therefore, the direction of the power of the first cylindrical lens pair 9 is perpendicular to the direction of the power of the second cylindrical lens pair 10, and the composite system of the first cylindrical lens pair 9 and the second cylindrical lens pair 10 has the Z-directional power and the X-directional power identical to each other. As a result, in a perfect circle state shown in FIG. 7, a beam passing through the composite system of the first cylindrical lens pair 9 and the second cylindrical lens pair 10 is subject to enlargement at the same power in the Z-direction and in the X-direction to form the secondary light source of a perfect-circle annular shape on the illumination pupil.
  • In contrast to it, FIG. 8 shows such a setting that the direction of the power of the first cylindrical lens pair 9 makes, for example, the angle of +80° around the optical axis AX relative to the Z-axis and that the direction of the power of the second cylindrical lens pair 10 makes, for example, the angle of −80° around the optical axis AX relative to the Z-axis. Therefore, the power in the X-direction is greater than the power in the Z-direction in the composite system of the first cylindrical lens pair 9 and the second cylindrical lens pair 10. As a result, in a horizontally elliptic state shown in FIG. 8, the beam passing through the composite system of the first cylindrical lens pair 9 and the second cylindrical lens pair 10 is subject to enlargement at the power greater in the X-direction than in the Z-direction, whereby the secondary light source of a horizontally long annular shape elongated in the X-direction is formed on the illumination pupil.
  • On the other hand, FIG. 9 shows such a setting that the direction of the power of the first cylindrical lens pair 9 makes, for example, the angle of +10° around the optical axis AX relative to the Z-axis and that the direction of the power of the second cylindrical lens pair 10 makes, for example, the angle of −10° around the optical axis AX relative to the Z-axis. Therefore, the power in the Z-direction is greater than the power in the X-direction in the composite system of the first cylindrical lens pair 9 and the second cylindrical lens pair 10. As a result, in a vertically elliptical state shown in FIG. 9, the beam passing through the composite system of the first cylindrical lens pair 9 and the second cylindrical lens pair 10 is subject to enlargement at the power greater in the Z-direction than in the X-direction, whereby the secondary light source of a vertically long annular shape elongated in the Z-direction is formed on the illumination pupil.
  • Furthermore, by setting the first cylindrical lens pair 9 and the second cylindrical lens pair 10 in an arbitrary state between the perfect circle state shown in FIG. 7 and the horizontally elliptical state shown in FIG. 8, the secondary light source can be formed in a horizontally long annular shape according to any one of various aspect ratios. By setting the first cylindrical lens pair 9 and the second cylindrical lens pair 10 in an arbitrary state between the perfect circle state shown in FIG. 7 and the vertically elliptical state shown in FIG. 9, the secondary light source can be formed in a vertically long annular shape according to any one of various aspect ratios.
  • FIG. 10 is a perspective view schematically showing the internal configuration of the polarization monitor shown in FIG. 1. With reference to FIG. 10, the polarization monitor 10 is provided with a first beam splitter 13 a disposed in the optical path between the micro fly's eye lens 12 and the condenser optical system 14. The first beam splitter 13 a has, for example, the form of a non-coated plane-parallel plate made of quartz glass (i.e., raw glass), and has a function of taking reflected light in a polarization state different from a polarization state of incident light, out of the optical path.
  • The light taken out of the optical path by the first beam splitter 13 a is incident to a second beam splitter 13 b. The second beam splitter 13 b has, for example, the form of a non-coated plane-parallel plate made of quartz glass as the first beam splitter 13 a does, and has a function of generating reflected light in a polarization state different from the polarization state of incident light. The polarization monitor is so set that the P-polarized light for the first beam splitter 13 a becomes the S-polarized light for the second beam splitter 13 b and that the S-polarized light for the first beam splitter 13 a becomes the P-polarized light for the second beam splitter 13 b.
  • Light transmitted by the second beam splitter 13 b is detected by first light intensity detector 13 c, while light reflected by the second beam splitter 13 b is detected by second light intensity detector 13 d. Outputs from the first light intensity detector 13 c and from the second light intensity detector 13 d are supplied each to a controller (not shown). The controller drives the quarter wave plate 4 a, half wave plate 4 b, and depolarizer 4 c constituting the polarization state converter 4, according to need.
  • As described above, the reflectance for the P-polarized light and the reflectance for the S-polarized light are substantially different in the first beam splitter 13 a and in the second beam splitter 13 b. In the polarization monitor 13, therefore, the reflected light from the first beam splitter 13 a includes the S-polarization component (i.e., the S-polarization component for the first beam splitter 13 a and P-polarization component for the second beam splitter 13 b), for example, which is approximately 10% of the incident light to the first beam splitter 13 a, and the P-polarization component (i.e., the P-polarization component for the first beam splitter 13 a and S-polarization component for the second beam splitter 13 b), for example, which is approximately 1% of the incident light to the first beam splitter 13 a.
  • The reflected light from the second beam splitter 13 b includes the P-polarization component (i.e., the P-polarization component for the first beam splitter 13 a and S-polarization component for the second beam splitter 13 b), for example, which is approximately 10%×1%=0.1% of the incident light to the first beam splitter 13 a, and the S-polarization component (i.e., the S-polarization component for the first beam splitter 13 a and P-polarization component for the second beam splitter 13 b), for example, which is approximately 1%×10%=0.1% of the incident light to the first beam splitter 13 a.
  • In the polarization monitor 13, as described above, the first beam splitter 13 a has the function of extracting the reflected light in the polarization state different from the polarization state of the incident light out of the optical path in accordance with its reflection characteristic. As a result, though there is slight influence of variation of polarization due to the polarization characteristic of the second beam splitter 13 b, it is feasible to detect the polarization state (degree of polarization) of the incident light to the first beam splitter 13 a and, therefore, the polarization state of the illumination light to the mask M, based on the output from the first light intensity detector 13 c (information about the intensity of transmitted light from the second beam splitter 13 b, i.e., information about the intensity of light virtually in the same polarization state as that of the reflected light from the first beam splitter 13 a).
  • The polarization monitor 13 is so set that the P-polarized light for the first beam splitter 13 a becomes the S-polarized light for the second beam splitter 13 b and that the S-polarized light for the first beam splitter 13 a becomes the P-polarized light for the second beam splitter 13 b. As a result, it is feasible to detect the light quantity (intensity) of the incident light to the first beam splitter 13 a and, therefore, the light quantity of the illumination light to the mask M, with no substantial effect of change in the polarization state of the incident light to the first beam splitter 13 a, based on the output from the second light intensity detector 13 d (information about the intensity of light successively reflected by the first beam splitter 13 a and the second beam splitter 13 b).
  • In this manner, it is feasible to detect the polarization state of the incident light to the first beam splitter 13 a and, therefore, to determine whether the illumination light to the mask M is in the desired unpolarized state or linearly polarized state, using the polarization monitor 13. When the controller determines that the illumination light to the mask M (eventually, to the wafer W) is not in the desired unpolarized state or linearly polarized state, based on the detection result of the polarization monitor 13, it drives and adjusts the quarter wave plate 4 a, half wave plate 4 b, and depolarizer 4 c constituting the polarization state converter 4 so that the state of the illumination light to the mask M can be adjusted into the desired unpolarized state or linearly polarized state.
  • Quadrupole illumination can be implemented by setting a diffractive optical element for quadrupole illumination (not shown) in the illumination optical path, instead of the diffractive optical element 5 for annular illumination. The diffractive optical element for quadrupole illumination has such a function that when a parallel beam having a rectangular cross section is incident thereto, it forms a light intensity distribution of a quadrupole shape in the far field thereof. Therefore, the beam passing through the diffractive optical element for quadrupole illumination forms an illumination field of a quadrupole shape consisting of four circular illumination fields centered around the optical axis AX, for example, on the entrance surface of the micro fly's eye lens 12. As a result, the secondary light source of the same quadrupole shape as the illumination field formed on the entrance surface is also formed on the rear focal plane of the micro fly's eye lens 12.
  • In addition, ordinary circular illumination can be implemented by setting a diffractive optical element for circular illumination (not shown) in the illumination optical path, instead of the diffractive optical element 5 for annular illumination. The diffractive optical element for circular illumination has such a function that when a parallel beam having a rectangular cross section is incident thereto, it forms a light intensity distribution of a circular shape in the far field. Therefore, a beam passing through the diffraction optical element for circular illumination forms a circular illumination field centered around the optical axis AX, for example, on the entrance plane of the micro fly's eye lens 12. As a result, the secondary light source of the same circular shape as the illumination field formed on the entrance surface is also formed on the rear focal plane of the micro fly's eye lens 12.
  • Furthermore, a variety of multipole illuminations (dipole illumination, octapole illumination, etc.) can be implemented by setting other diffractive optical elements for multipole illuminations (not shown), instead of the diffractive optical element 5 for annular illumination. Likewise, modified illuminations in various forms can be implemented by setting diffractive optical elements with appropriate characteristics (not shown) in the illumination optical path, instead of the diffractive optical element 5 for annular illumination.
  • In the present embodiment, a diffractive optical element 50 for so-called azimuthally polarized annular illumination can be set, instead of the diffractive optical element 5 for annular illumination, in the illumination optical path, so as to implement the modified illumination in which the beam passing through the secondary light source of the annular shape is set in the azimuthal polarization state, i.e., the azimuthally polarized annular illumination. FIG. 11 is an illustration schematically showing the configuration of the diffractive optical element for azimuthally polarized annular illumination according to the present embodiment. FIG. 12 is an illustration schematically showing the secondary light source of the annular shape set in the azimuthal polarization state.
  • With reference to FIGS. 11 and 12, the diffractive optical element 50 for azimuthally polarized annular illumination according to the present embodiment is constructed in such an arrangement that four types of basic elements 50A-50D having the same cross section of a rectangular shape and having their respective thicknesses different from each other along the direction of transmission of light (Y-direction) (i.e., lengths in the direction of the optical axis) are arranged lengthwise and breadthwise and densely. The thicknesses are set as follows: the thickness of the first basic elements 50A is the largest, the thickness of the fourth basic elements 50D the smallest, and the thickness of the second basic elements 50B is greater than the thickness of the third basic elements 50C.
  • The diffractive optical element 50 includes an approximately equal number of first basic elements 50A, second basic elements 50B, third basic elements 50C, and fourth basic elements 50D, and the four types of basic elements 50A-50D are arranged substantially at random. Furthermore, a diffracting surface (indicated by hatching in the drawing) is formed on the mask side of each basic element 50A-50D, and the diffracting surfaces of the respective basic elements 50A-50D are arrayed along one plane perpendicular to the optical axis AX (not shown in FIG. 11). As a result, the mask-side surface of the diffractive optical element 50 is planar, while the light-source-side surface of the diffractive optical element 50 is uneven due to the differences among the thicknesses of the respective basic elements 50A-50D.
  • The diffracting surface of each first basic element 50A is arranged to form a pair of arc regions (bow shape) 31A symmetric with respect to an axis line of the Z-direction passing the optical axis AX, in the secondary light source 31 of the annular shape shown in FIG. 12. Namely, as shown in FIG. 13, each first basic element 50A has a function of forming a pair of arc (bow shape) light intensity distributions 32A symmetric with respect to the axis line of the Z-direction passing the optical axis AX (corresponding to a pair of arc regions 31A) in the far field 50E of the diffractive optical element 50 (i.e., in the far field of each basic element 50A-50D).
  • The diffracting surface of each second basic element 50B is arranged so as to form a pair of arc (bow shape) regions 31B symmetric with respect to an axis line obtained by rotating the axis line of the Z-direction passing the optical axis AX, by −45° around the Y-axis (or obtained by rotating it by 45° counterclockwise in FIG. 12). Namely, as shown in FIG. 14, each second basic element 50B has a function of forming a pair of arc (bow shape) light intensity distributions 32B symmetric with respect to the axis line resulting from the −45° rotation around the Y-axis, of the axis line of the Z-direction passing the optical axis AX (corresponding to a pair of arc regions 31B), in the far field 50E.
  • The diffracting surface of each third basic element 50C is arranged to form a pair of arc (bow shape) regions 31C symmetric with respect to an axis line of the X-direction passing the optical axis AX. Namely, as shown in FIG. 15, each third basic element 50C has a function of forming a pair of arc (bow shape) light intensity distributions 32C symmetric with respect to the axis line of the X-direction passing the optical axis AX (corresponding to a pair of arc regions 31C), in the far field 50E.
  • The diffracting surface of each fourth basic element 50D is arranged so as to form a pair of arc (bow shape) regions 31D symmetric with respect to an axis line obtained by rotating the axis of the Z-direction passing the optical axis AX by +45° around the Y-axis (i.e., obtained by rotating it by 45° clockwise in FIG. 12). Namely, as shown in FIG. 16, each fourth basic element 50D has a function of forming a pair of arc (bow shape) light intensity distributions 32D symmetric with respect to the axis line resulting from the +45° rotation around the Y-axis, of the axis line of the Z-direction passing the optical axis AX (corresponding to a pair of arc regions 31D), in the far field 50E. The sizes of the respective arc regions 31A-31D are approximately equal to each other, and they form the secondary light source 31 of the annular shape centered around the optical axis AX, while the eight arc regions 31A-31D are not overlapping with each other and not spaced from each other.
  • In the present embodiment, each basic element 50A-50D is made of crystalline quartz being an optical material with optical activity, and the crystallographic axis of each basic element 50A-50D is set approximately to coincide with the optical axis AX. The optical activity of crystalline quartz will be briefly described below with reference to FIG. 17. With reference to FIG. 17, an optical member 35 of a plane-parallel plate shape made of crystalline quartz and in a thickness d is arranged so that its crystallographic axis coincides with the optical axis AX. In this case, by virtue of the optical activity of the optical member 35, incident, linearly polarized light emerges in a state in which its-polarization direction is rotated by θ around the optical axis AX.
  • At this time, the angle θ of rotation of the polarization direction due to the optical activity of the optical member 35 is represented by Eq (1) below, using the thickness d of the optical member 35 and the rotatory power ρ of crystalline quartz.

  • θ=d·ρ  (1)
  • In general, the rotatory power ρ of crystalline quartz tends to increase with decrease in the wavelength of used light and, according to the description on page 167 in “Applied Optics II,” the rotatory power ρ of crystalline quartz for light having the wavelength of 250.3 nm is 153.9°/mm.
  • In the present embodiment the first basic elements 50A are designed in such a thickness dA that when light of linear polarization having the direction of polarization along the Z-direction is incident thereto, they output light of linear polarization having the polarization direction along a direction resulting from +180° rotation of the Z-direction around the Y-axis, i.e., along the Z-direction, as shown in FIG. 13. As a result, the polarization direction of beams passing through a pair of arc light intensity distributions 32A formed in the far field 50E is also the Z-direction, and the polarization direction of beams passing through a pair of arc regions 31A shown in FIG. 12 is also the Z-direction.
  • The second basic elements 50B are designed in such a thickness dB that when light of linear polarization having the polarization direction along the Z-direction is incident thereto, they output light of linear polarization having the polarization direction along a direction resulting from +135° rotation of the Z-direction around the Y-axis, i.e., along a direction resulting from −45° rotation of the Z-direction around the Y-axis, as shown in FIG. 14. As a result, the polarization direction of beams passing through a pair of arc light intensity distributions 32B formed in the far field 50E is also the direction obtained by rotating the Z-direction by −45° around the Y-axis, and the polarization direction of beams passing through a pair of arc regions 31A shown in FIG. 12 is also the direction obtained by rotating the Z-direction by −45° around the Y-axis.
  • The third basic elements 50C are designed in such a thickness dC that when light of linear polarization having the polarization direction along the Z-direction is incident thereto, they output light of linear polarization having the polarization direction along a direction resulting from +90° rotation of the Z-direction around the Y-axis, i.e., along the X-direction, as shown in FIG. 15. As a result, the polarization direction of beams passing through a pair of arc light intensity distributions 32C formed in the far field 50E is also the X-direction, and the polarization direction of beams passing through a pair of arc regions 31C shown in FIG. 12 is also the X-direction.
  • The fourth basic elements 50D are designed in such a thickness dD that when light of linear polarization having the polarization direction along the Z-direction is incident thereto, they output light of linear polarization having the polarization direction along a direction resulting from +45° rotation of the Z-direction around the Y-axis, as shown in FIG. 16. As a result, the polarization direction of beams passing through a pair of arc light intensity distributions 32D formed in the far field 50E is also the direction obtained by rotating the Z-direction by +45° around the Y-axis, and the polarization direction of beams passing through a pair of arc regions 31D shown in FIG. 12 is also the direction obtained by rotating the Z-direction by +45° around the Y-axis.
  • In the present embodiment, the diffractive optical element 50 for azimuthally polarized annular illumination is set in the illumination optical system on the occasion of effecting the azimuthally polarized annular illumination, whereby the light of linear polarization having the polarization direction along the Z-direction is made incident to the diffractive optical element 50. As a result, the secondary light source of the annular shape (illumination pupil distribution of annular shape) 31 is formed on the rear focal plane of the micro fly's eye lens 12 (i.e., on or near the illumination pupil), as shown in FIG. 12, and the beams passing through the secondary light source 31 of the annular shape are set in the azimuthal polarization state.
  • In the azimuthal polarization state, the beams passing through the respective arc regions 31A-31D constituting the secondary light source 31 of the annular shape turn into the linearly polarized state having the polarization direction substantially coincident with a tangent line to a circle centered around the optical axis AX, at the central position along the circumferential direction of each arc region 31A-31D.
  • In the present embodiment, as described above, the beam transforming element 50 for forming the predetermined light intensity distribution on the predetermined surface on the basis of the incident beam comprises the first basic element 50A made of the optical material with optical activity, for forming the first region distribution 32A of the predetermined light intensity distribution on the basis of the incident beam; and the second basic element 50B made of the optical material with optical activity, for forming the second region distribution 32B of the predetermined light intensity distribution on the basis of the incident beam, and the first basic element 50A and the second basic element 50B have their respective thicknesses different from each other along the direction of transmission of light.
  • Thanks to this configuration, the present embodiment is able to form the secondary light source 31 of the annular shape in the azimuthal polarization state, with no substantial loss of light quantity, through the diffracting action and optical rotating action of the diffractive optical element 50 as the beam transforming element, different from the conventional technology giving rise to the large loss of light quantity at the aperture stop.
  • In a preferred form of the present embodiment, the thickness of the first basic element 50A and the thickness of the second basic element 50B are so set that with incidence of linearly polarized light the polarization direction of the linearly polarized light forming the first region distribution 32A is different from the polarization direction of the linearly polarized light forming the second region distribution 32B. Preferably, the first region distribution 32A and the second region distribution 32B are positioned in at least a part of a predetermined annular region, which is a predetermined annular region centered around a predetermined point on the predetermined surface, and the beams passing through the first region distribution 32A and through the second region distribution 32B have a polarization state in which a principal component is linearly polarized light having the polarization direction along the circumferential direction of the predetermined annular region.
  • In this case, preferably, the predetermined light intensity distribution has a contour of virtually the same shape as the predetermined annular region, the polarization state of the beam passing through the first region distribution 32A has a linear polarization component substantially coincident with a tangential direction to a circle centered around a predetermined point at the central position along the circumferential direction of the first region distribution 32A, and the polarization state of the beam passing through the second region distribution 32B has a linear polarization component substantially coincident with a tangential direction to a circle centered around a predetermined point at the central position along the circumferential direction of the second region distribution 32B. In another preferred configuration, the predetermined light intensity distribution is a distribution of a multipole shape in the predetermined annular region, the polarization state of the beam passing through the first region distribution has a linear polarization component substantially coincident with a tangential direction to a circle centered around a predetermined point at the central position along the circumferential direction of the first region distribution, and the polarization state of the beam passing through the second region distribution has a linear polarization component substantially coincident with a tangential direction to a circle centered around a predetermined point at the central position along the circumferential direction of the second region distribution.
  • In a preferred form of the present embodiment, the first basic element and the second basic element are made of an optical material with an optical rotatory power of not less than 100°/mm for light of a wavelength used. Preferably, the first basic element and the second basic element are made of crystalline quartz. The beam transforming element preferably includes virtually the same number of first basic elements and second basic elements. The first basic element and the second basic element preferably have diffracting action or refracting action.
  • In another preferred form of the present embodiment, preferably, the first basic element forms at least two first region distributions on the predetermined surface on the basis of the incident beam, and the second basic element forms at least two second region distributions on the predetermined surface on the basis of the incident beam. In addition, preferably, the beam transforming element further comprises the third basic element 50C made of the optical material with optical activity, for forming the third region distribution 32C of the predetermined light intensity distribution on the basis of the incident beam, and the fourth basic element 50D made of the optical material with optical activity, for forming the fourth region distribution 32D of the predetermined light intensity distribution on the basis of the incident beam.
  • In the present embodiment, the beam transforming element 50 for forming the predetermined light intensity distribution of the shape different from the sectional shape of the incident beam, on the predetermined surface, has the diffracting surface or refracting surface for forming the predetermined light intensity distribution on the predetermined surface, the predetermined light intensity distribution is a distribution in at least a part of a predetermined annular region, which is a predetermined annular region centered around a predetermined point on the predetermined surface, and the beam from the beam transforming element passing through the predetermined annular region has a polarization state in which a principal component is linearly polarized light having the direction of polarization along the circumferential direction of the predetermined annular region.
  • In the configuration as described above, the present embodiment, different from the conventional technology giving rise to the large loss of light quantity at the aperture stop, is able to form the secondary light source 31 of the annular shape in the azimuthal polarization state, with no substantial loss of light quantity, through the diffracting action and optical rotating action of the diffractive optical element 50 as the beam transforming element.
  • In a preferred form of the present embodiment, the predetermined light intensity distribution has a contour of a multipole shape or annular shape. The beam transforming element is preferably made of an optical material with optical activity.
  • The illumination optical apparatus of the present embodiment is the illumination optical apparatus for illuminating the surface to be illuminated, based on the beam from the light source, and comprises the above-described beam transforming element for transforming the beam from the light source in order to form the illumination pupil distribution on or near the illumination pupil of the illumination optical apparatus. In this configuration, the illumination optical apparatus of the present embodiment is able to form the illumination pupil distribution of the annular shape in the azimuthal polarization state while well suppressing the loss of light quantity.
  • Here the beam transforming element is preferably arranged to be replaceable with another beam transforming element having a different characteristic. Preferably, the apparatus further comprises the wavefront splitting optical integrator disposed in the optical path between the beam transforming element and the surface to be illuminated, and the beam transforming element forms the predetermined light intensity distribution on the entrance surface of the optical integrator on the basis of the incident beam.
  • In a preferred form of the illumination optical apparatus of the present embodiment, at least one of the light intensity distribution on the predetermined surface and the polarization state of the beam from the beam transforming element passing through the predetermined annular region is set in consideration of the influence of an optical member disposed in the optical path between the light source and the surface to be illuminated. Preferably, the polarization state of the beam from the beam transforming element is so set that the light illuminating the surface to be illuminated is in a polarization state in which a principal component is S-polarized light.
  • The exposure apparatus of the present embodiment comprises the above-described illumination optical apparatus for illuminating the mask, and projects the pattern of the mask onto the photosensitive substrate. Preferably, at least one of the light intensity distribution on the predetermined surface and the polarization state of the beam from the beam transforming element passing through the predetermined annular region is set in consideration of the influence of an optical member disposed in the optical path between the light source and the photosensitive substrate. Preferably, the polarization state of the beam from the beam transforming element is so set that the light illuminating the photosensitive substrate is in a polarization state in which a principal component is S-polarized light.
  • The exposure method of the present embodiment comprises the illumination step of illuminating the mask by use of the above-described illumination optical apparatus, and the exposure step of projecting the pattern of the mask onto the photosensitive substrate. Preferably, at least one of the light intensity distribution on the predetermined surface and the polarization state of the beam from the beam transforming element passing through the predetermined annular region is set in consideration of the influence of an optical member disposed in the optical path between the light source and the photosensitive substrate. Preferably, the polarization state of the beam from the beam transforming element is so set that the light illuminating the photosensitive substrate is in a polarization state in which a principal component is S-polarized light.
  • In other words, the illumination optical apparatus of the present embodiment is able to form the illumination pupil distribution of the annular shape in the azimuthal polarization state while well suppressing the loss of light quantity. As a result, the exposure apparatus of the present embodiment is able to transcribe the microscopic pattern in an arbitrary direction under an appropriate illumination condition faithfully and with high throughput because it uses the illumination optical apparatus capable of forming the illumination pupil distribution of the annular shape in the azimuthal polarization state while well suppressing the loss of light quantity.
  • In the azimuthally polarized annular illumination based on the illumination pupil distribution of the annular shape in the azimuthal polarization state, the light illuminating the wafer W as a surface to be illuminated is in the polarization state in which the principal component is the S-polarized light. Here the S-polarized light is linearly polarized light having the direction of polarization along a direction normal to a plane of incidence (i.e., polarized light with the electric vector oscillating in the direction normal to the plane of incidence). The plane of incidence herein is defined as the following plane: when light arrives at a boundary surface of a medium (a surface to be illuminated: surface of wafer W), the plane includes the normal to the boundary plane at the arrival point and the direction of incidence of light.
  • In the above-described embodiment, the diffractive optical element 50 for azimuthally polarized annular illumination is constructed by randomly arranging virtually the same number of four types of basic elements 50A-50D with the same rectangular cross section lengthwise and breadthwise and densely. However, without having to be limited to this, a variety of modification examples can be contemplated as to the number of basic elements of each type, the sectional shape, the number of types, the arrangement, and so on.
  • In the above-described embodiment, the secondary light source 31 of the annular shape centered around the optical axis AX is composed of the eight arc regions 31A-31D arrayed without overlapping with each other and without being spaced from each other, using the diffractive optical element 50 consisting of the four types of basic elements 50A-50D. However, without having to be limited to this, a variety of modification examples can be contemplated as to the number of regions forming the secondary light source of the annular shape, the shape, the arrangement, and so on.
  • Specifically, as shown in FIG. 18A, it is also possible to form a secondary light source 33 a of an octapole shape in the azimuthal polarization state consisting of eight arc (bow shape) regions spaced from each other along the circumferential direction, for example, using the diffractive optical element consisting of four types of basic elements. In addition, as shown in FIG. 18B, it is also possible to form a secondary light source 33 b of a quadrupole shape in the azimuthal polarization state consisting of four arc (bow shape) regions spaced from each other along the circumferential direction, for example, using the diffractive optical element consisting of four types of basic elements. In the secondary light source of the octapole shape or the secondary light source of the quadrupole shape, the shape of each region is not limited to the arc shape, but it may be, for example, circular, elliptical, or sectorial. Furthermore, as shown in FIG. 19, it is also possible to form a secondary light source 33 c of an annular shape in the azimuthal polarization state consisting of eight arc regions overlapping with each other along the circumferential direction, for example, using the diffractive optical element consisting of four types of basic elements.
  • In addition to the quadrupole or octapole secondary light source in the azimuthal polarization state consisting of the four or eight regions spaced from each other along the circumferential direction, the secondary light source may be formed in a hexapole shape in the azimuthal polarization state and of six regions spaced from each other along the circumferential direction, as shown in FIG. 20A. In addition, as shown in FIG. 20B, the secondary light source may be formed as one having secondary light source of a multipole shape in the azimuthal polarization state consisting of a plurality of regions spaced from each other along the circumferential direction, and a secondary light source on the center pole in the unpolarized state or linearly polarized state consisting of a region on the optical axis. Furthermore, the secondary light source may also be formed in a dipole shape in the azimuthal polarization state and of two regions spaced from each other along the circumferential direction.
  • In the aforementioned embodiment, as shown in FIG. 11, the four types of basic elements 50A-50D are individually formed, and the diffractive optical element 50 is constructed by combining these elements. However, without having to be limited to this, the diffractive optical element 50 can also be integrally constructed in such a manner that a crystalline quartz substrate is subjected, for example, to etching to form the exit-side diffracting surfaces and the entrance-side uneven surfaces of the respective basic elements 50A-50D.
  • In the aforementioned embodiment each basic element 50A-50D (therefore, the diffractive optical element 50) is made of crystalline quartz. However, without having to be limited to this, each basic element can also be made of another appropriate optical material with optical activity. In this case, it is preferable to use an optical material with an optical rotatory power of not less than 100°/mm for light of a wavelength used. Specifically, use of an optical material with a low rotatory power is undesirable because the thickness necessary for achieving the required rotation angle of the polarization direction becomes too large, so as to cause the loss of light quantity.
  • The aforementioned embodiment is arranged to form the illumination pupil distribution of the annular shape (secondary light source), but, without having to be limited to this, the illumination pupil distribution of a circular shape can also be formed on or near the illumination pupil. In addition to the illumination pupil distribution of the annular shape and the illumination pupil distribution of the multipole shape, it is also possible to implement a so-called annular illumination with the center pole and a multipole illumination with the center pole, for example, by forming a center region distribution including the optical axis.
  • In the aforementioned embodiment, the illumination pupil distribution in the azimuthal polarization state is formed on or near the illumination pupil. However, the polarization direction can vary because of polarization aberration (retardation) of an optical system (the illumination optical system or the projection optical system) closer to the wafer than the diffractive optical element as the beam transforming element. In this case, it is necessary to properly set the polarization state of the beam passing through the illumination pupil distribution formed on or near the illumination pupil, with consideration to the influence of polarization aberration of these optical systems.
  • In connection with the foregoing polarization aberration, reflected light can have a phase difference in each polarization direction because of a polarization characteristic of a reflecting member disposed in the optical system (the illumination optical system or the projection optical system) closer to the wafer than the beam transforming element. In this case, it is also necessary to properly set the polarization state of the beam passing through the illumination pupil distribution formed on or near the illumination pupil, with consideration to the influence of the phase difference due to the polarization characteristic of the reflecting member.
  • The reflectance in the reflecting member can vary depending upon the polarization direction, because of a polarization characteristic of a reflecting member disposed in the optical system (the illumination optical system or the projection optical system) closer to the wafer than the beam transforming element. In this case, it is desirable to provide offsets on the light intensity distribution formed on or near the illumination pupil, i.e. to provide a distribution of numbers of respective basic elements, in consideration of the reflectance in each polarization direction. The same technique can also be similarly applied to cases where the transmittance in the optical system closer to the wafer than the beam transforming element varies depending upon the polarization direction.
  • In the foregoing embodiment, the light-source-side surface of the diffractive optical element 50 is of the uneven shape with level differences according to the differences among the thicknesses of respective basic elements 50A-50D. Then the surface on the light source side (entrance side) of the diffractive optical element 50 can also be formed in a planar shape, as shown in FIG. 21, by adding a compensation member 36 on the entrance side of the basic elements except for the first basic elements 50A with the largest thickness, i.e., on the entrance side of the second basic elements 50B, third basic elements 50C, and fourth basic elements 50D. In this case, the compensation member 36 is made of an optical material without optical activity.
  • The aforementioned embodiment shows the example wherein the beam passing through the illumination pupil distribution formed on or near the illumination pupil has only the linear polarization component along the circumferential direction. However, without having to be limited to this, the expected effect of the present invention can be achieved as long as the polarization state of the beam passing through the illumination pupil distribution is a state in which the principal component is linearly polarized light having the polarization direction along the circumferential direction.
  • The foregoing embodiment uses the diffractive optical element consisting of the plural types of basic elements having the diffracting action, as the beam transforming element for forming the light intensity distribution of the shape different from the sectional shape of the incident beam, on the predetermined plane, based on the incident beam. However, without having to be limited to this, it is also possible to use as the beam transforming element a refracting optical element, for example, consisting of plural types of basic elements having refracting surfaces virtually optically equivalent to the diffracting surfaces of the respective basic elements, i.e., consisting of plural types of basic elements having the refracting action.
  • The exposure apparatus according to the foregoing embodiment is able to produce microdevices (semiconductor elements, image pickup elements, liquid crystal display elements, thin-film magnetic heads, etc.) by illuminating a mask (reticle) by the illumination optical apparatus (illumination step) and projecting a pattern for transcription formed on the mask, onto a photosensitive substrate by use of the projection optical system (exposure step). The following will describe an example of a procedure of producing semiconductor devices as microdevices by forming a predetermined circuit pattern on a wafer or the like as a photosensitive substrate by means of the exposure apparatus of the foregoing embodiment, with reference to the flowchart of FIG. 22.
  • The first step 301 in FIG. 22 is to deposit a metal film on each of wafers in one lot. The next step 302 is to apply a photoresist onto the metal film on each wafer in the lot. Thereafter, step 303 is to sequentially transcribe an image of a pattern on a mask into each shot area on each wafer in the lot, through the projection optical system by use of the exposure apparatus of the foregoing embodiment. Subsequently, step 304 is to perform development of the photoresist on each wafer in the lot, and step 305 thereafter is to perform etching with the resist pattern as a mask on each wafer in the lot, thereby forming a circuit pattern corresponding to the pattern on the mask, in each shot area on each wafer. Thereafter, devices such as semiconductor elements are produced through execution of formation of circuit patterns in upper layers and others. The semiconductor device production method as described above permits us to produce the semiconductor devices with extremely fine circuit patterns at high throughput.
  • The exposure apparatus of the foregoing embodiment can also be applied to production of a liquid crystal display element as a microdevice in such a manner that predetermined patterns (a circuit pattern, an electrode pattern, etc.) are formed on a plate (glass substrate). An example of a procedure of this production will be described below with reference to the flowchart of FIG. 23. In FIG. 23, pattern forming step 401 is to execute a so-called photolithography step of transcribing a pattern on a mask onto a photosensitive substrate (a glass substrate coated with a resist or the like) by use of the exposure apparatus of the foregoing embodiment. In this photolithography step, the predetermined patterns including a number of electrodes and others are formed on the photosensitive substrate. Thereafter, the exposed substrate is subjected to steps such as a development step, an etching step, a resist removing step, etc., to form the predetermined patterns on the substrate, followed by next color filter forming step 402.
  • The next color filter forming step 402 is to form a color filter in which a number of sets of three dots corresponding to R (Red), G (Green), and B (Blue) are arrayed in a matrix, or in which a plurality of sets of filters of three stripes of R, Q and B are arrayed in the direction of horizontal scan lines. After the color filter forming step 402, cell assembly step 403 is carried out. The cell assembly step 403 is to assemble a liquid crystal panel (liquid crystal cell), using the substrate with the predetermined patterns obtained in the pattern forming step 401, the color filter obtained in the color filter forming step 402, and so on.
  • In the cell assembly step 403, for example, a liquid crystal is poured into the space between the substrate with the predetermined patterns obtained in the pattern forming step 401 and the color filter obtained in the color filter forming step 402 to produce the liquid crystal panel (liquid crystal cell). Thereafter, module assembly step 404 is carried out to attach such components as an electric circuit, a backlight, and so on for implementing the display operation of the assembled liquid crystal panel (liquid crystal cell), to complete the liquid crystal display element. The production method of the liquid crystal display element described above permits us to produce the liquid crystal display elements with extremely fine circuit patterns at high throughput.
  • The foregoing embodiment is arranged to use the KrF excimer laser light (wavelength: 248 nm) or the ArF excimer laser light (wavelength: 193 nm) as the exposure light, but, without having to be limited to this, the present invention can also be applied to other appropriate laser light sources, e.g., an F2 laser light source for supplying laser light of the wavelength of 157 nm. Furthermore, the foregoing embodiment described the present invention, using the exposure apparatus with the illumination optical apparatus as an example, but it is apparent that the present invention can be applied to ordinary illumination optical apparatus for illuminating the surface to be illuminated, except for the mask and wafer.
  • In the foregoing embodiment, it is also possible to apply the so-called liquid immersion method, which is a technique of filling a medium (typically, a liquid) with a refractive index larger than 1.1 in the optical path between the projection optical system and the photosensitive substrate. In this case, the technique of filling the liquid in the optical path between the projection optical system and the photosensitive substrate can be selected from the technique of locally filling the liquid as disclosed in PCT International Publication No. WO99/49504, the technique of moving a stage holding a substrate as an exposure target in a liquid bath as disclosed in Japanese Patent Application Laid-Open No. 6-124873, the technique of forming a liquid bath in a predetermined depth on a stage and holding the substrate therein as disclosed in Japanese Patent Application Laid-Open No. 10-303114, and so on. The PCT International Publication No. WO99/49504, Japanese Patent Application Laid-Open No. 6-124873, and Japanese Patent Application Laid-Open No. 10-303114 are incorporated herein by reference.
  • The liquid is preferably one that is transparent to the exposure light, that has the refractive index as high as possible, and that is stable against the projection optical system and the photoresist applied to the surface of the substrate; for example, where the exposure light is the KrF excimer laser light or the ArF excimer laser light, pure water or deionized water can be used as the liquid. Where the F2 laser light is used as the exposure light, the liquid can be a fluorinated liquid capable of transmitting the F2 laser light, e.g., fluorinated oil or perfluoropolyether (PFPE).
  • From the invention thus described, it will be obvious that the invention may be varied in many ways. Such variations are not to be regarded as a departure from the spirit and scope of the invention, and all such modifications as would be obvious to one skilled in the art are intended for inclusion within the scope of the following claims.

Claims (74)

1. An apparatus which illuminates a surface to be illuminated with radiation from a radiation source, the apparatus comprising:
an optical member having a first portion of a first thickness along an optical axis direction of the apparatus and a second portion of a second thickness along the optical axis direction of the apparatus, wherein
the first and second portion thicknesses are different from each other, and the optical member is made of an optical material with optical activity.
2. The apparatus according to claim 1, wherein the optical member includes a first basic element and a second basic element.
3. The apparatus according to claim 2, further comprising:
a diffractive surface arranged in an illumination path of the apparatus which generates a first diffracted radiation and a second diffracted radiation from the radiation from the radiation source, the first and second diffracted radiations reach different regions on an illumination pupil of the apparatus;
the first basic element provides the first diffracted radiation with optical rotation;
the second basic element provides the second diffracted radiation with optical rotation, and the first and second basic element thicknesses are different from each other along a direction of transmission of the radiation.
4. The apparatus according to claim 3, further comprising an optical integrator arranged between the first and second basic elements and the surface to be illuminated.
5. The apparatus according to claim 4, wherein the diffractive surface is arranged between the first and second basic elements and the surface to be illuminated.
6. The apparatus according to claim 3, wherein the diffractive surface is arranged between the first and second basic elements and the surface to be illuminated.
7. The apparatus according to claim 2, wherein the first and second basic elements are arranged in a plane in an illumination path of the apparatus.
8. The apparatus according to claim 2, further comprising:
a diffractive surface which is arranged in an illumination path of the apparatus, and which forms a first region distribution of the predetermined light intensity distribution and a second region distribution of the predetermined light intensity distribution based on the radiation from the radiation source;
the first basic element provides a first rotation angle to an incident linearly polarized radiation and has a first thickness along a direction of transmission of radiation, and a linearly polarized radiation from the first basic element propagates to the first region distribution;
the second basic element provides a second rotation angle to an incident linearly polarized radiation and has a second thickness along a direction of transmission of radiation, the second thickness differs from the first thickness, and a linearly polarized radiation from the second basic element propagates to the second region distribution.
9. The apparatus according to claim 8, further comprising an optical integrator arranged between the first and second basic elements and the surface to be illuminated.
10. The apparatus according to claim 9, wherein the diffractive surface is arranged between the first and second basic elements and the surface to be illuminated.
11. The apparatus according to claim 8, wherein the diffractive surface is arranged between the first and second basic elements and the surface to be illuminated.
12. The apparatus according to claim 2, further comprising a diffractive surface arranged in an illumination path of the apparatus which generates a first diffracted radiation and a second diffracted radiation based on the radiation from the radiation source, the first and second diffracted radiations reach different regions on an illumination pupil of the apparatus.
13. The apparatus according to claim 12, wherein the diffractive surface forms an illumination pupil distribution which is formed on or near an illumination pupil of the apparatus.
14. The apparatus according to claim 2, wherein the first basic element and the second basic element are integrally formed.
15. The apparatus according to claim 1, further comprising an optical integrator arranged between the optical member and the surface to be illuminated.
16. The apparatus according to claim 1, further comprising:
a first optical unit including a first optical axis;
a second optical unit including a second optical axis which crosses the first optical axis, the first optical unit arranged in an illumination path between the radiation source and the second optical unit;
a third optical unit including a third optical axis which crosses the second optical axis, and the third optical unit is arranged in an illumination path between the second optical unit and the surface to be illuminated, wherein
the second optical unit includes the optical member.
17. The apparatus according to claim 16, wherein the optical member includes a first basic element and a second basic element.
18. The apparatus according to claim 17, further comprising:
a diffractive surface arranged in an illumination path of the apparatus which generates a first diffracted radiation and a second diffracted radiation based on the radiation from the radiation source, the first and second diffracted radiations reach different regions on an illumination pupil of the apparatus;
the first basic element provides the first diffracted radiation with optical rotation; and
the second basic element provides the second diffracted radiation with optical rotation, wherein
the first and second basic elements have thicknesses that are different from each other along a direction of transmission of the radiation.
19. The apparatus according to claim 16, wherein the second optical unit includes an optical integrator.
20. The apparatus according to claim 19, wherein the second optical unit includes a mask blind.
21. The apparatus according to claim 16, wherein the first basic element and the second basic element are integrally formed.
22. The apparatus according to claim 16, wherein the third optical unit includes a folding mirror.
23. The apparatus according to claim 16, wherein the second optical unit includes a polarization state converter.
24. The apparatus according to claim 23, wherein the optical member is arranged in an illumination path between the polarization converter and the third optical unit.
25. The apparatus according to claim 1, further comprising a polarization state converter arranged in an illumination path between the radiation source and the optical member.
26. The apparatus according to claim 1, wherein a polarization state of the beam from the optical member is set based on an influence of a second optical member in an illumination path between the light source and a substrate arranged surface.
27. The apparatus according to claim 26, wherein the second optical member includes a reflective member.
28. An exposure apparatus comprising the apparatus as defined in claim 1, which illuminates a predetermined pattern, and which projects the predetermined pattern onto a photosensitive substrate.
29. The exposure apparatus according to claim 28, wherein an illumination pupil distribution on or near an illumination pupil of the apparatus is a distribution in at least a part of a predetermined annular region centered around an optical axis of the apparatus.
30. The exposure apparatus according to claim 29, wherein a polarization state of the beam at the illumination pupil is set based on an influence of a second optical member disposed in an optical path between the light source and the photosensitive substrate.
31. The exposure apparatus according to claim 30, wherein the second optical member includes a reflective surface.
32. The exposure apparatus according to claim 31, wherein the polarization state of the beam at the illumination pupil is set so that light illuminating the photosensitive substrate is in a polarization state in which a principal component is s-polarized light.
33. An exposure apparatus comprising the apparatus as defined in claim 16, which illuminates a predetermined pattern, and that projects the predetermined pattern onto a photosensitive substrate.
34. The exposure apparatus according to claim 33, wherein an illumination pupil distribution on or near an illumination pupil of the apparatus is a distribution in at least a part of a predetermined annular region centered around an optical axis of the apparatus.
35. The exposure apparatus according to claim 33, wherein a polarization state of the beam at the illumination pupil is set based on an influence of a second optical member in an optical path between the light source and the photosensitive substrate.
36. The exposure apparatus according to claim 35, wherein the second optical member includes a reflective surface.
37. The exposure apparatus according to claim 36, wherein the polarization state of the beam at the illumination pupil is set so that light illuminating the photosensitive substrate is in a polarization state in which a principal component is s-polarized light.
38. An exposure apparatus comprising the apparatus as defined in claim 25, which illuminates a predetermined pattern, and that projects the predetermined pattern onto a photosensitive substrate.
39. The exposure apparatus according to claim 38, wherein an illumination pupil distribution on or near an illumination pupil of the apparatus is a distribution in at least a part of a predetermined annular region centered around an optical axis of the apparatus.
40. The exposure apparatus according to claim 39, wherein a polarization state of the beam at the illumination pupil is set based on an influence of a second optical member in an optical path between the light source and the photosensitive substrate.
41. The exposure apparatus according to claim 40, wherein the second optical member including a reflective surface.
42. The exposure apparatus according to claim 41, wherein the polarization state of the beam at the illumination pupil is set so that light illuminating the photosensitive substrate is in a polarization state in which a principal component is s-polarized light.
43. An exposure method comprising:
illuminating a predetermined pattern using the exposure apparatus as defined in claim 28; and
projecting an image of the predetermined pattern onto a photosensitive substrate.
44. A device manufacturing method comprising:
illuminating a predetermined pattern using the exposure apparatus as defined in claim 28;
projecting an image of the predetermined pattern onto a photosensitive substrate; and
developing the photosensitive substrate.
45. An exposure method comprising:
illuminating a predetermined pattern using the exposure apparatus as defined in claim 33; and
projecting an image of the predetermined pattern onto a photosensitive substrate.
46. A device manufacturing method comprising:
illuminating a predetermined pattern using the exposure apparatus as defined in claim 33;
projecting an image of the predetermined pattern onto a photosensitive substrate; and
developing the photosensitive substrate.
47. An exposure method comprising:
illuminating a predetermined pattern using the exposure apparatus as defined in claim 38; and
projecting an image of the predetermined pattern onto a photosensitive substrate.
48. A device manufacturing method comprising:
illuminating a predetermined pattern using the exposure apparatus as defined in claim 38;
projecting an image of the predetermined pattern onto a photosensitive substrate; and
developing the photosensitive substrate.
49. An exposure method comprising:
supplying radiation;
passing the radiation through an optical member made of an optical material with optical activity, the optical member including a first thickness along a traveling direction of an incident radiation and a second thickness along a traveling direction of an incident radiation, the first and second thicknesses are different from each other;
illuminating a pattern with radiation that has passed through the optical member; and
projecting an image of the pattern using the radiation with which the pattern was illuminated.
50. The method according to claim 49, wherein the passing the radiation through the optical member includes passing the radiation through a first basic element and a second basic element.
51. The method according to claim 50, further comprising:
generating a first diffracted radiation and a second diffracted radiation, the first and second diffracted radiations reach different regions on an illumination pupil;
optically rotating the first diffracted radiation with the first basic element; and
optically rotating the second diffracted radiation with the second basic element, wherein
the first and second basic elements have thicknesses different from each other along a direction of transmission of the radiation.
52. The method according to claim 51, further comprising passing the radiations from the first and second basic elements through an optical integrator.
53. The method according to claim 52, wherein the first and second diffracted radiations are generated by radiations from the first and second basic elements.
54. The method according to claim 51, wherein the first and second diffracted radiations are generated by radiations from the first and second basic elements.
55. The method according to claim 50, wherein the first and second basic elements are in an illumination path of the radiation.
56. The method according to claim 50, wherein the first basic element and the second basic element are integrally formed.
57. The method according to claim 49, wherein a polarization state of the beam at an illumination pupil is set based on a second optical member in an optical path upstream of the photosensitive substrate.
58. The method according to claim 57, wherein the second optical member includes a reflective surface.
59. A device manufacturing method comprising:
projecting an image of a pattern onto a photosensitive substrate using the exposure method according to claim 49; and
developing the photosensitive substrate.
60. An exposure method comprising:
supplying radiation;
folding the supplied radiation;
passing the folded radiation through an optical member made of an optical material with optical activity, the optical member including a first portion having a first thickness along a traveling direction of an incident radiation and a second portion having a second thickness along a traveling direction of an incident radiation, the first and second portions having thicknesses that are different from each other;
folding the radiation that has passed through the optical member;
illuminating a pattern by use of the folded radiation that has passed through the optical member; and
projecting an image of the pattern using the radiation with which the pattern was illuminated.
61. The method according to claim 60, wherein a polarization state of the beam at an illumination pupil is set based on an influence of a second optical member disposed in an optical path upstream of the photosensitive substrate.
62. The method according to claim 61, wherein the second optical member includes a reflective surface.
63. A device manufacturing method comprising:
projecting an image of a pattern onto a photosensitive substrate using the exposure method according to claim 60; and
developing the photosensitive substrate.
64. An exposure method comprising:
supplying radiation;
passing the supplied radiation through a polarization state converter;
passing the radiation from the polarization state converter through an optical member made of an optical material with optical activity, the optical member including a first thickness along a traveling direction of an incident radiation and a second thickness along a traveling direction of an incident radiation, and the first and second thicknesses being different from each other;
illuminating a pattern with the radiation that has passed through the optical member; and
projecting an image of the pattern image using the radiation with which the pattern was illuminated.
65. The method according to claim 64, wherein a polarization state of the beam at an illumination pupil is set based on an influence of a second optical member disposed in an optical path upstream of the photosensitive substrate.
66. The method according to claim 65, wherein the second optical member includes a reflective surface.
67. A device manufacturing method comprising:
projecting an image of a pattern onto a photosensitive substrate using the exposure method according to claim 64; and
developing the photosensitive substrate.
68. The apparatus according to claim 2, wherein the first basic element and the second basic element are made of same optical material.
69. The apparatus according to claim 17, wherein the first basic element and the second basic element are made of same optical material.
70. The method according to claim 50, wherein the first basic element and the second basic element are made of same optical material.
71. The method according to claim 60, wherein the optical member includes a first basic element including the first thickness and a second basic element including the second thickness.
72. The method according to claim 71, wherein the first basic element and the second basic element are made of same optical material.
73. The method according to claim 64, wherein the optical member includes a first basic element including the first thickness and a second basic element including the second thickness.
74. The method according to claim 73, wherein the first basic element and the second basic element are made of same optical material.
US12/320,480 2003-11-20 2009-01-27 Beam transforming element, illumination optical apparatus, exposure apparatus, and exposure method with two optical elements having different thicknesses Abandoned US20090147235A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/320,480 US20090147235A1 (en) 2003-11-20 2009-01-27 Beam transforming element, illumination optical apparatus, exposure apparatus, and exposure method with two optical elements having different thicknesses
US13/137,003 US9164209B2 (en) 2003-11-20 2011-07-14 Illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power having different thicknesses to rotate linear polarization direction

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2003390674 2003-11-20
JP2003-390674 2003-11-20
PCT/JP2004/016247 WO2005050718A1 (en) 2003-11-20 2004-11-02 Light flux conversion element, lighting optical device, exposure system, and exposure method
US11/319,057 US20060158624A1 (en) 2003-11-20 2005-12-28 Beam transforming element, illumination optical apparatus, exposure apparatus, and exposure method
US12/320,480 US20090147235A1 (en) 2003-11-20 2009-01-27 Beam transforming element, illumination optical apparatus, exposure apparatus, and exposure method with two optical elements having different thicknesses

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US11/319,057 Continuation US20060158624A1 (en) 2003-11-20 2005-12-28 Beam transforming element, illumination optical apparatus, exposure apparatus, and exposure method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/137,003 Continuation US9164209B2 (en) 2003-11-20 2011-07-14 Illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power having different thicknesses to rotate linear polarization direction

Publications (1)

Publication Number Publication Date
US20090147235A1 true US20090147235A1 (en) 2009-06-11

Family

ID=34616350

Family Applications (12)

Application Number Title Priority Date Filing Date
US11/319,057 Abandoned US20060158624A1 (en) 2003-11-20 2005-12-28 Beam transforming element, illumination optical apparatus, exposure apparatus, and exposure method
US12/320,468 Abandoned US20090147234A1 (en) 2003-11-20 2009-01-27 Beam transforming element, illumination optical apparatus, exposure apparatus, and exposure method with two optical elements having different thicknesses
US12/320,465 Abandoned US20090147233A1 (en) 2003-11-20 2009-01-27 Beam transforming element, illumination optical apparatus, exposure apparatus, and exposure method with two optical elements having different thicknesses
US12/320,480 Abandoned US20090147235A1 (en) 2003-11-20 2009-01-27 Beam transforming element, illumination optical apparatus, exposure apparatus, and exposure method with two optical elements having different thicknesses
US12/461,852 Abandoned US20090323041A1 (en) 2003-11-20 2009-08-26 Beam transforming element, illumination optical apparatus, exposure apparatus, and exposure method with two optical elements having different thicknesses
US13/137,002 Granted US20110273692A1 (en) 2003-11-20 2011-07-14 Beam transforming element, illumination optical apparatus, exposure apparatus, and exposure method with two optical elements having different thicknesses
US13/137,004 Abandoned US20110273698A1 (en) 2003-11-20 2011-07-14 Beam transforming element, illumination optical apparatus, exposure apparatus, and exposure method with two optical elements having different thicknesses
US13/137,003 Expired - Fee Related US9164209B2 (en) 2003-11-20 2011-07-14 Illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power having different thicknesses to rotate linear polarization direction
US13/137,342 Active US10281632B2 (en) 2003-11-20 2011-08-08 Illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power to rotate linear polarization direction
US13/889,965 Active US9885872B2 (en) 2003-11-20 2013-05-08 Illumination optical apparatus, exposure apparatus, and exposure method with optical integrator and polarization member that changes polarization state of light
US14/818,788 Abandoned US20150338663A1 (en) 2003-11-20 2015-08-05 Beam transforming optical system, illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power having different thickness to rotate linear polarization direction
US15/662,948 Abandoned US20170351100A1 (en) 2003-11-20 2017-07-28 Beam transforming optical system, illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power having different thickness to rotate linear polarization direction

Family Applications Before (3)

Application Number Title Priority Date Filing Date
US11/319,057 Abandoned US20060158624A1 (en) 2003-11-20 2005-12-28 Beam transforming element, illumination optical apparatus, exposure apparatus, and exposure method
US12/320,468 Abandoned US20090147234A1 (en) 2003-11-20 2009-01-27 Beam transforming element, illumination optical apparatus, exposure apparatus, and exposure method with two optical elements having different thicknesses
US12/320,465 Abandoned US20090147233A1 (en) 2003-11-20 2009-01-27 Beam transforming element, illumination optical apparatus, exposure apparatus, and exposure method with two optical elements having different thicknesses

Family Applications After (8)

Application Number Title Priority Date Filing Date
US12/461,852 Abandoned US20090323041A1 (en) 2003-11-20 2009-08-26 Beam transforming element, illumination optical apparatus, exposure apparatus, and exposure method with two optical elements having different thicknesses
US13/137,002 Granted US20110273692A1 (en) 2003-11-20 2011-07-14 Beam transforming element, illumination optical apparatus, exposure apparatus, and exposure method with two optical elements having different thicknesses
US13/137,004 Abandoned US20110273698A1 (en) 2003-11-20 2011-07-14 Beam transforming element, illumination optical apparatus, exposure apparatus, and exposure method with two optical elements having different thicknesses
US13/137,003 Expired - Fee Related US9164209B2 (en) 2003-11-20 2011-07-14 Illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power having different thicknesses to rotate linear polarization direction
US13/137,342 Active US10281632B2 (en) 2003-11-20 2011-08-08 Illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power to rotate linear polarization direction
US13/889,965 Active US9885872B2 (en) 2003-11-20 2013-05-08 Illumination optical apparatus, exposure apparatus, and exposure method with optical integrator and polarization member that changes polarization state of light
US14/818,788 Abandoned US20150338663A1 (en) 2003-11-20 2015-08-05 Beam transforming optical system, illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power having different thickness to rotate linear polarization direction
US15/662,948 Abandoned US20170351100A1 (en) 2003-11-20 2017-07-28 Beam transforming optical system, illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power having different thickness to rotate linear polarization direction

Country Status (9)

Country Link
US (12) US20060158624A1 (en)
EP (5) EP3118890A3 (en)
JP (11) JP4976015B2 (en)
KR (8) KR101220636B1 (en)
CN (8) CN101685265B (en)
AT (1) ATE540424T1 (en)
HK (8) HK1094093A1 (en)
TW (5) TW201809801A (en)
WO (1) WO2005050718A1 (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060291057A1 (en) * 2004-01-16 2006-12-28 Damian Fiolka Polarization-modulating optical element
US20070081114A1 (en) * 2004-01-16 2007-04-12 Damian Fiolka Polarization-modulating optical element
US20080316459A1 (en) * 2004-01-16 2008-12-25 Carl Zeiss Smt Ag Polarization-modulating optical element
US20090147234A1 (en) * 2003-11-20 2009-06-11 Nikon Corporation Beam transforming element, illumination optical apparatus, exposure apparatus, and exposure method with two optical elements having different thicknesses
US20100142051A1 (en) * 2004-01-27 2010-06-10 Nikon Corporation Optical system, exposure system, and exposure method
US20110037962A1 (en) * 2009-08-17 2011-02-17 Nikon Corporation Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method
US7916391B2 (en) 2004-05-25 2011-03-29 Carl Zeiss Smt Gmbh Apparatus for providing a pattern of polarization
US20110205519A1 (en) * 2010-02-25 2011-08-25 Nikon Corporation Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method
US20130271945A1 (en) 2004-02-06 2013-10-17 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US8675177B2 (en) 2003-04-09 2014-03-18 Nikon Corporation Exposure method and apparatus, and method for fabricating device with light amount distribution having light larger in first and second pairs of areas
US9140992B2 (en) 2003-10-28 2015-09-22 Nikon Corporation Illumination optical apparatus and projection exposure apparatus

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080273185A1 (en) * 2004-06-16 2008-11-06 Nikon Corporation Optical System, Exposing Apparatus and Exposing Method
JPWO2006016469A1 (en) * 2004-08-10 2008-05-01 株式会社ニコン Illumination optical apparatus, exposure apparatus, and exposure method
KR100614651B1 (en) * 2004-10-11 2006-08-22 삼성전자주식회사 Apparatus And Method For Pattern Exposure, Photomask Used Therefor, Design Method For The Photomask, Illuminating System Therefor and Implementing Method For The Illuminating System
WO2006131517A2 (en) * 2005-06-07 2006-12-14 Carl Zeiss Smt Ag Illuminating device of a microlithographic projection exposure system
DE102006031807A1 (en) * 2005-07-12 2007-01-18 Carl Zeiss Smt Ag Lighting device for microlithographic projection exposure system, has depolarizing system to effect polarization direction variation such that light mixer produces light without preferred direction, and including plates of crystal material
US20090115989A1 (en) * 2005-11-10 2009-05-07 Hirohisa Tanaka Lighting optical system, exposure system, and exposure method
US7884921B2 (en) * 2006-04-12 2011-02-08 Nikon Corporation Illumination optical apparatus, projection exposure apparatus, projection optical system, and device manufacturing method
EP2009678A4 (en) * 2006-04-17 2011-04-06 Nikon Corp Illuminating optical apparatus, exposure apparatus and device manufacturing method
KR20090029686A (en) 2006-06-16 2009-03-23 가부시키가이샤 니콘 Variable slit device, illuminating device, exposure device, exposure method, and method of manufacturing device
DE102006032878A1 (en) * 2006-07-15 2008-01-17 Carl Zeiss Smt Ag Illumination system of a microlithographic projection exposure apparatus
JP2008070870A (en) * 2006-08-25 2008-03-27 Jds Uniphase Corp Passive depolarizer
DE102007007907A1 (en) * 2007-02-14 2008-08-21 Carl Zeiss Smt Ag Method for producing a diffractive optical element, diffractive optical element produced by such a method, illumination optics having such a diffractive optical element, microlithography projection exposure apparatus with such illumination optics, method for producing a microelectronic component using such a projection exposure apparatus, and method produced by such a method module
DE102007019831B4 (en) 2007-04-25 2012-03-01 Carl Zeiss Smt Gmbh Illumination device of a microlithographic projection exposure apparatus
KR100896875B1 (en) * 2007-07-23 2009-05-12 주식회사 동부하이텍 Exposure apparatus and method thereof
DE102007043958B4 (en) 2007-09-14 2011-08-25 Carl Zeiss SMT GmbH, 73447 Illumination device of a microlithographic projection exposure apparatus
US7996762B2 (en) * 2007-09-21 2011-08-09 Microsoft Corporation Correlative multi-label image annotation
SG185313A1 (en) * 2007-10-16 2012-11-29 Nikon Corp Illumination optical system, exposure apparatus, and device manufacturing method
WO2009050976A1 (en) * 2007-10-16 2009-04-23 Nikon Corporation Illumination optical system, exposure apparatus, and device manufacturing method
JP5224027B2 (en) * 2007-10-22 2013-07-03 大日本印刷株式会社 Diffraction grating fabrication method using phase mask for diffraction grating fabrication
JP2009198903A (en) * 2008-02-22 2009-09-03 Olympus Corp Optical equipment
DE102008041179B4 (en) 2008-08-12 2010-11-04 Carl Zeiss Smt Ag Illumination optics for a microlithography projection exposure apparatus
DE102009006685A1 (en) * 2009-01-29 2010-08-05 Carl Zeiss Smt Ag Illumination system for micro-lithography
JP5360399B2 (en) * 2009-08-06 2013-12-04 大日本印刷株式会社 Diffraction grating phase mask
DE102010046133B4 (en) * 2010-09-13 2014-01-09 Klaus Becker Trunking generator
JP6120001B2 (en) * 2011-10-24 2017-04-26 株式会社ニコン Illumination optical system, exposure apparatus, and device manufacturing method
DE102011085334A1 (en) 2011-10-27 2013-05-02 Carl Zeiss Smt Gmbh Optical system in a lighting device of a microlithographic projection exposure apparatus
JPWO2013089258A1 (en) * 2011-12-15 2015-04-27 株式会社ニコン Microscope and stimulator
DE102012200370A1 (en) 2012-01-12 2013-08-01 Carl Zeiss Smt Gmbh Method for manufacturing optical element in microlithographic projection exposure system of optical system for manufacturing microstructured components, involves providing substrate that is made from material and has thickness
DE102012200371A1 (en) 2012-01-12 2013-07-18 Carl Zeiss Smt Gmbh Optical system for a microlithographic projection exposure apparatus and microlithographic exposure method
CN103792767B (en) * 2012-10-31 2015-10-07 深圳市绎立锐光科技开发有限公司 Wavelength conversion devices, its manufacture method and relevant wavelength conversion equipment
GB201713740D0 (en) 2017-08-25 2017-10-11 Nkt Photonics As Depolarizing homogenizer
JP7227775B2 (en) * 2019-01-31 2023-02-22 キヤノン株式会社 Illumination optical system, exposure apparatus and article manufacturing method

Citations (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3892470A (en) * 1974-02-01 1975-07-01 Hughes Aircraft Co Optical device for transforming monochromatic linearly polarized light to ring polarized light
US4744615A (en) * 1986-01-29 1988-05-17 International Business Machines Corporation Laser beam homogenizer
US4755027A (en) * 1985-07-02 1988-07-05 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V. Method and device for polarizing light radiation
US5312513A (en) * 1992-04-03 1994-05-17 Texas Instruments Incorporated Methods of forming multiple phase light modulators
US5541026A (en) * 1991-06-13 1996-07-30 Nikon Corporation Exposure apparatus and photo mask
US5621498A (en) * 1991-10-15 1997-04-15 Kabushiki Kaisha Toshiba Projection exposure apparatus
US5631721A (en) * 1995-05-24 1997-05-20 Svg Lithography Systems, Inc. Hybrid illumination system for use in photolithography
US5739898A (en) * 1993-02-03 1998-04-14 Nikon Corporation Exposure method and apparatus
US5933219A (en) * 1994-04-22 1999-08-03 Canon Kabushiki Kaisha Projection exposure apparatus and device manufacturing method capable of controlling polarization direction
US6031658A (en) * 1998-09-25 2000-02-29 University Of Central Florida Digital control polarization based optical scanner
US6191880B1 (en) * 1995-09-23 2001-02-20 Carl-Zeiss-Stiftung Radial polarization-rotating optical arrangement and microlithographic projection exposure system incorporating said arrangement
US6208407B1 (en) * 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
US6211944B1 (en) * 1990-08-21 2001-04-03 Nikon Corporation Projection exposure method and apparatus
US6229647B1 (en) * 1992-12-14 2001-05-08 Canon Kabushiki Kaisha Reflection and refraction optical system and projection exposure apparatus using the same
US6233041B1 (en) * 1990-08-21 2001-05-15 Nikon Corporation Exposure method utilizing diffracted light having different orders of diffraction
US6252712B1 (en) * 1998-02-20 2001-06-26 Carl-Zeiss-Stiftung Optical system with polarization compensator
US6259512B1 (en) * 1997-08-04 2001-07-10 Canon Kabushiki Kaisha Illumination system and exposure apparatus having the same
US6341007B1 (en) * 1996-11-28 2002-01-22 Nikon Corporation Exposure apparatus and method
US20020024008A1 (en) * 2000-08-24 2002-02-28 Asahi Kogaku Kogyo Kabushiki Kaisha Method of detecting arrangement of beam spots
US20020027719A1 (en) * 2000-04-25 2002-03-07 Silicon Valley Group, Inc. Optical reduction system with control of illumination polarization
US6361909B1 (en) * 1999-12-06 2002-03-26 Industrial Technology Research Institute Illumination aperture filter design using superposition
US6404482B1 (en) * 1992-10-01 2002-06-11 Nikon Corporation Projection exposure method and apparatus
US20020085276A1 (en) * 2000-11-29 2002-07-04 Nikon Corporation Illumination optical apparatus and exposure apparatus provided with illumination optical apparatus
US20020085176A1 (en) * 1999-01-06 2002-07-04 Nikon Corporation Projection optical system, production method thereof, and projection exposure apparatus using it
US20030007158A1 (en) * 2001-07-06 2003-01-09 Hill Henry A. Method and apparatus to reduce effects of sheared wavefronts on interferometric phase measurements
US20030038225A1 (en) * 2001-06-01 2003-02-27 Mulder Heine Melle Lithographic apparatus, device manufacturing method, device manufactured thereby, control system, computer program, and computer program product
US20030043356A1 (en) * 1990-11-15 2003-03-06 Nikon Corporation Projection exposure apparatus and method
US6535273B1 (en) * 1998-07-02 2003-03-18 Carl-Zeiss-Stiftung Microlithographic illumination system with depolarizer
US20030053036A1 (en) * 2001-07-10 2003-03-20 Nikon Corporation Production method of projection optical system
US6597430B1 (en) * 1998-05-18 2003-07-22 Nikon Corporation Exposure method, illuminating device, and exposure system
US6674514B2 (en) * 2000-03-16 2004-01-06 Canon Kabushiki Kaisha Illumination optical system in exposure apparatus
US20040004771A1 (en) * 2002-04-26 2004-01-08 Nikon Corporation Projection optical system, exposure system provided with the projection optical system, and exposure method using the projection optical system
US20040012764A1 (en) * 2002-05-31 2004-01-22 Mulder Heine Melle Kit of parts for assembling an optical element, method of assembling an optical element, optical element, lithographic apparatus, and device manufacturing method
US20040057036A1 (en) * 2002-09-19 2004-03-25 Miyoko Kawashima Exposure method
US20040104654A1 (en) * 2002-08-31 2004-06-03 Samsung Electronics Co., Ltd. Cabinet for recessed refrigerators
US20040119954A1 (en) * 2002-12-10 2004-06-24 Miyoko Kawashima Exposure apparatus and method
US6842223B2 (en) * 2003-04-11 2005-01-11 Nikon Precision Inc. Enhanced illuminator for use in photolithographic systems
US6856379B2 (en) * 2001-05-22 2005-02-15 Carl Zeiss Smt Ag Polarizer and microlithography projection system with a polarizer
US6870668B2 (en) * 2000-10-10 2005-03-22 Nikon Corporation Method for evaluating image formation performance
US6885493B2 (en) * 2001-02-05 2005-04-26 Micronic Lasersystems Ab Method and a device for reducing hysteresis or imprinting in a movable micro-element
US20050095749A1 (en) * 2002-04-29 2005-05-05 Mathias Krellmann Device for protecting a chip and method for operating a chip
US20050094268A1 (en) * 2002-03-14 2005-05-05 Carl Zeiss Smt Ag Optical system with birefringent optical elements
US6891655B2 (en) * 2003-01-02 2005-05-10 Micronic Laser Systems Ab High energy, low energy density, radiation-resistant optics used with micro-electromechanical devices
US6900915B2 (en) * 2001-11-14 2005-05-31 Ricoh Company, Ltd. Light deflecting method and apparatus efficiently using a floating mirror
US6913373B2 (en) * 2002-05-27 2005-07-05 Nikon Corporation Optical illumination device, exposure device and exposure method
US20050146704A1 (en) * 2003-09-26 2005-07-07 Carl Zeiss Smt Ag Microlithographic exposure method as well as a projection exposure system for carrying out the method
US20060012769A1 (en) * 2003-09-12 2006-01-19 Canon Kabushiki Kaisha Illumination optical system and exposure apparatus using the same
US6999157B2 (en) * 2002-04-23 2006-02-14 Canon Kabushiki Kaisha Illumination optical system and method, and exposure apparatus
US20060055834A1 (en) * 2002-12-03 2006-03-16 Nikon Corporation Illumination optical system, exposure apparatus, and exposure method
US20060072095A1 (en) * 2003-04-09 2006-04-06 Nikon Corporation Exposure method and apparatus, and method for fabricating device
US20060077370A1 (en) * 2004-10-12 2006-04-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method
US20060092398A1 (en) * 2004-11-02 2006-05-04 Asml Holding N.V. Method and apparatus for variable polarization control in a lithography system
US20060132748A1 (en) * 2004-12-20 2006-06-22 Kazuya Fukuhara Exposure system, exposure method and method for manufacturing a semiconductor device
US20060139611A1 (en) * 2004-12-28 2006-06-29 Asml Netherlands B.V. Polarized radiation in lithographic apparatus and device manufacturing method
US20060146384A1 (en) * 2003-05-13 2006-07-06 Carl Zeiss Smt Ag Optical beam transformation system and illumination system comprising an optical beam transformation system
US20060158624A1 (en) * 2003-11-20 2006-07-20 Nikon Corporation Beam transforming element, illumination optical apparatus, exposure apparatus, and exposure method
US20060164711A1 (en) * 2005-01-24 2006-07-27 Asml Holding N.V. System and method utilizing an electrooptic modulator
US20070008511A1 (en) * 2005-07-11 2007-01-11 Asml Netherlands B.V. Polarized radiation in lithographic apparatus and device manufacturing method
US20070019179A1 (en) * 2004-01-16 2007-01-25 Damian Fiolka Polarization-modulating optical element
US20070058151A1 (en) * 2005-09-13 2007-03-15 Asml Netherlands B.V. Optical element for use in lithography apparatus and method of conditioning radiation beam
US20070081114A1 (en) * 2004-01-16 2007-04-12 Damian Fiolka Polarization-modulating optical element
US20070146676A1 (en) * 2005-01-21 2007-06-28 Nikon Corporation Method of adjusting lighting optical device, lighting optical device, exposure system, and exposure method
US20080030707A1 (en) * 2004-08-17 2008-02-07 Nikon Corporation Lighting Optical Device, Regulation Method for Lighting Optical Device, Exposure System, and Exposure Method
US20080030706A1 (en) * 2006-08-01 2008-02-07 Fujitsu Limited Illumination optical system, exposure method and designing method
US7345740B2 (en) * 2004-12-28 2008-03-18 Asml Netherlands B.V. Polarized radiation in lithographic apparatus and device manufacturing method
US20090073441A1 (en) * 2004-02-06 2009-03-19 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US20090073411A1 (en) * 2007-09-14 2009-03-19 Nikon Corporation Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method
US20090091730A1 (en) * 2007-10-03 2009-04-09 Nikon Corporation Spatial light modulation unit, illumination apparatus, exposure apparatus, and device manufacturing method
US20090097007A1 (en) * 2007-10-16 2009-04-16 Hirohisa Tanaka Illumination optical system, exposure apparatus, and device manufacturing method
US20090109417A1 (en) * 2007-10-24 2009-04-30 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US20090116093A1 (en) * 2007-11-06 2009-05-07 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
US20090122292A1 (en) * 2003-10-28 2009-05-14 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
US20090128886A1 (en) * 2007-10-12 2009-05-21 Nikon Corporation Illumination optical apparatus, exposure apparatus, and device manufacturing method
US20090185154A1 (en) * 2007-10-31 2009-07-23 Nikon Corporation Optical unit, illumination optical apparatus, exposure appartus, exposure method, and device manufacturing method
US20100141926A1 (en) * 2004-01-27 2010-06-10 Nikon Corporation Optical system,exposure system, and exposure method

Family Cites Families (933)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3293882B2 (en) 1992-03-27 2002-06-17 株式会社東芝 Projection exposure equipment
GB856621A (en) 1956-07-20 1960-12-21 Nat Res Dev Improvements in or relating to polarising microscopes
US3146294A (en) 1959-02-13 1964-08-25 American Optical Corp Interference microscope optical systems
US3180216A (en) 1962-08-13 1965-04-27 American Optical Corp System and apparatus for variable phase microscopy
JPS444993Y1 (en) 1964-05-28 1969-02-24
US3758201A (en) 1971-07-15 1973-09-11 American Optical Corp Optical system for improved eye refraction
JPS557673B2 (en) 1972-11-25 1980-02-27
US3892469A (en) 1974-02-01 1975-07-01 Hughes Aircraft Co Electro-optical variable focal length lens using optical ring polarizer
FR2385241A1 (en) * 1976-12-23 1978-10-20 Marie G R P POLARIZATION MODE CONVERTERS FOR LASER BEAMS AND PLASMA GENERATORS USING THEM
US4103260A (en) 1977-01-03 1978-07-25 Hughes Aircraft Company Spatial polarization coding electro-optical transmitter
US4198123A (en) 1977-03-23 1980-04-15 Baxter Travenol Laboratories, Inc. Optical scrambler for depolarizing light
FR2413678A1 (en) 1977-12-28 1979-07-27 Marie G R P MODE CONVERTERS FROM A NON-CONFINANT WAVE TO A CONFINANT WAVE IN THE FAR INFRARED
US4286843A (en) 1979-05-14 1981-09-01 Reytblatt Zinovy V Polariscope and filter therefor
JPS5857066B2 (en) 1979-06-29 1983-12-17 古河電気工業株式会社 linear motor
EP0023231B1 (en) 1979-07-27 1982-08-11 Tabarelli, Werner, Dr. Optical lithographic method and apparatus for copying a pattern onto a semiconductor wafer
FR2465241A1 (en) 1979-09-10 1981-03-20 Thomson Csf ILLUMINATOR DEVICE FOR PROVIDING AN ADJUSTABLE INTENSITY DISTRIBUTION ILLUMINATION BEAM AND PATTERN TRANSFER SYSTEM COMPRISING SUCH A DEVICE
FR2474708B1 (en) 1980-01-24 1987-02-20 Dme HIGH-RESOLUTION MICROPHOTOLITHOGRAPHY PROCESS
US4346164A (en) 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS57117238A (en) 1981-01-14 1982-07-21 Nippon Kogaku Kk <Nikon> Exposing and baking device for manufacturing integrated circuit with illuminometer
JPS57152129A (en) 1981-03-13 1982-09-20 Sanyo Electric Co Ltd Developing method of resist
JPS57153433A (en) 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS5845502U (en) 1981-09-21 1983-03-26 株式会社津山金属製作所 wide angle reflector
JPS5849932A (en) 1981-09-21 1983-03-24 Ushio Inc Adjuster for illuminance distribution pattern
JPS58115945A (en) 1981-12-29 1983-07-09 Toyoda Gosei Co Ltd Power transmission and signal transmission and reception method to steering section
JPS58202448A (en) 1982-05-21 1983-11-25 Hitachi Ltd Exposing device
DD206607A1 (en) 1982-06-16 1984-02-01 Mikroelektronik Zt Forsch Tech METHOD AND DEVICE FOR ELIMINATING INTERFERENCE EFFECTS
JPS5919912A (en) 1982-07-26 1984-02-01 Hitachi Ltd Immersion distance holding device
DD242880A1 (en) 1983-01-31 1987-02-11 Kuch Karl Heinz DEVICE FOR PHOTOLITHOGRAPHIC STRUCTURAL TRANSMISSION
JPS59226317A (en) 1983-06-06 1984-12-19 Nippon Kogaku Kk <Nikon> Illuminating device
DD221563A1 (en) 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech IMMERSIONS OBJECTIVE FOR THE STEP-BY-STEP PROJECTION IMAGING OF A MASK STRUCTURE
JPS59155843A (en) 1984-01-27 1984-09-05 Hitachi Ltd Exposing device
DD224448A1 (en) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl DEVICE FOR PHOTOLITHOGRAPHIC STRUCTURAL TRANSMISSION
JPS6144429A (en) 1984-08-09 1986-03-04 Nippon Kogaku Kk <Nikon> Alignment method
JPS6145923A (en) 1984-08-10 1986-03-06 Aronshiya:Kk Manufacture of rotary disk for reflection type rotary encoder
JPH0682598B2 (en) 1984-10-11 1994-10-19 日本電信電話株式会社 Projection exposure device
JPS61217434A (en) 1985-03-20 1986-09-27 Mitsubishi Chem Ind Ltd Conveying device
JPS6194342U (en) 1984-11-27 1986-06-18
JPS61156736A (en) 1984-12-27 1986-07-16 Canon Inc Exposing device
JPS61196532A (en) 1985-02-26 1986-08-30 Canon Inc Exposure device
JPS61251025A (en) 1985-04-30 1986-11-08 Canon Inc Projection exposing apparatus
JPS61270049A (en) 1985-05-24 1986-11-29 Toshiba Corp Table device
JPS622539A (en) 1985-06-28 1987-01-08 Canon Inc Illumination optical system
JPS622540A (en) 1985-06-28 1987-01-08 Canon Inc Light integrator and koehler illumination system including integrator thereof
US4683420A (en) 1985-07-10 1987-07-28 Westinghouse Electric Corp. Acousto-optic system for testing high speed circuits
JPS6217705A (en) 1985-07-16 1987-01-26 Nippon Kogaku Kk <Nikon> Telecentric optical system lighting device
JPS6265326A (en) 1985-09-18 1987-03-24 Hitachi Ltd Exposure device
JPS62100161A (en) 1985-10-23 1987-05-09 Shin Etsu Chem Co Ltd Flat motor
JPS62120026A (en) 1985-11-20 1987-06-01 Fujitsu Ltd X-ray exposing apparatus
JPH07105323B2 (en) 1985-11-22 1995-11-13 株式会社日立製作所 Exposure method
JPS62121417A (en) 1985-11-22 1987-06-02 Hitachi Ltd Liquid-immersion objective lens device
JPS62153710A (en) 1985-12-27 1987-07-08 Furukawa Alum Co Ltd Preparation of reflective substrate for rotary encoder
JPH0782981B2 (en) 1986-02-07 1995-09-06 株式会社ニコン Projection exposure method and apparatus
JPS62188316A (en) 1986-02-14 1987-08-17 Canon Inc Projection exposure device
JPS62203526A (en) 1986-02-28 1987-09-08 トヨタ自動車株式会社 Radio power transmitter
JPH0666246B2 (en) 1986-05-14 1994-08-24 キヤノン株式会社 Illumination optics
JP2506616B2 (en) 1986-07-02 1996-06-12 キヤノン株式会社 Exposure apparatus and circuit manufacturing method using the same
JPS6336526A (en) 1986-07-30 1988-02-17 Oki Electric Ind Co Ltd Wafer exposure equipment
JPS6344726A (en) * 1986-08-12 1988-02-25 Norihisa Ito Illumination optical device of stepper using excimer laser
JPH0695511B2 (en) 1986-09-17 1994-11-24 大日本スクリ−ン製造株式会社 Washing and drying treatment method
JPS63128713A (en) 1986-11-19 1988-06-01 Matsushita Electric Ind Co Ltd Correction of distortion in scanning aligner
JPS63131008A (en) 1986-11-20 1988-06-03 Fujitsu Ltd Optical alignment method
JPS63141313A (en) 1986-12-03 1988-06-13 Hitachi Ltd Thin plate deforming device
JPS63157419A (en) 1986-12-22 1988-06-30 Toshiba Corp Fine pattern transfer apparatus
JPS63160192A (en) 1986-12-23 1988-07-02 株式会社明電舎 Connecting conductor of radio frequency heater
JPS63231217A (en) 1987-03-19 1988-09-27 Omron Tateisi Electronics Co Measuring instrument for movement quantity
JPH0718699B2 (en) 1987-05-08 1995-03-06 株式会社ニコン Surface displacement detector
JPS6426704A (en) 1987-05-11 1989-01-30 Jiei Shirinian Jiyon Pocket structure of garment
JPS63292005A (en) 1987-05-25 1988-11-29 Nikon Corp Detecting apparatus of amount of movement corrected from running error
JPH07117371B2 (en) 1987-07-14 1995-12-18 株式会社ニコン measuring device
JPS6468926A (en) 1987-09-09 1989-03-15 Nikon Corp Measurement of image distortion in projection optical system
US4981342A (en) 1987-09-24 1991-01-01 Allergan Inc. Multifocal birefringent lens system
JPH0191419A (en) 1987-10-01 1989-04-11 Canon Inc Aligner
JPH01115033A (en) 1987-10-28 1989-05-08 Hitachi Ltd Gas discharge display device
JPH01147516A (en) 1987-12-04 1989-06-09 Canon Inc Beam position controller
JP2728133B2 (en) 1987-12-09 1998-03-18 株式会社リコー Digital image forming equipment
JPH01202833A (en) 1988-02-09 1989-08-15 Toshiba Corp Accurate xy stage device
JPH0831513B2 (en) 1988-02-22 1996-03-27 株式会社ニコン Substrate suction device
JPH0545102Y2 (en) 1988-02-24 1993-11-17
JPH01255404A (en) 1988-04-05 1989-10-12 Toshiba Corp Electromagnet device for levitation
US4952815A (en) 1988-04-14 1990-08-28 Nikon Corporation Focusing device for projection exposure apparatus
JPH01276043A (en) 1988-04-28 1989-11-06 Mitsubishi Cable Ind Ltd Waveguide type liquid detector
JPH01278240A (en) 1988-04-28 1989-11-08 Tokyo Electron Ltd Uninterruptible power source for apparatus for manufacture of semiconductor
JPH01286478A (en) 1988-05-13 1989-11-17 Hitachi Ltd Beam uniformizing optical system and manufacture thereof
JPH01292343A (en) 1988-05-19 1989-11-24 Fujitsu Ltd Pellicle
JPH01314247A (en) 1988-06-13 1989-12-19 Fuji Plant Kogyo Kk Automatic exposing device for printed circuit board
JPH0831514B2 (en) 1988-06-21 1996-03-27 株式会社ニコン Substrate suction device
JPH0242382A (en) 1988-08-02 1990-02-13 Canon Inc Moving stage structure
WO1990002125A1 (en) 1988-08-22 1990-03-08 Idemitsu Kosan Co. Ltd. Oxirane derivatives and herbicides containing same as active ingredients
JPH0265149A (en) 1988-08-30 1990-03-05 Mitsubishi Electric Corp Semiconductor device
JP2729058B2 (en) 1988-08-31 1998-03-18 山形日本電気株式会社 Exposure equipment for semiconductor devices
JPH0297239A (en) 1988-09-30 1990-04-09 Canon Inc Power source equipment for aligner
JP2682067B2 (en) 1988-10-17 1997-11-26 株式会社ニコン Exposure apparatus and exposure method
JP2697014B2 (en) 1988-10-26 1998-01-14 株式会社ニコン Exposure apparatus and exposure method
JPH02139146A (en) 1988-11-15 1990-05-29 Matsushita Electric Ind Co Ltd Positioning table of one step six degrees of freedom
JP2940553B2 (en) 1988-12-21 1999-08-25 株式会社ニコン Exposure method
US5253110A (en) 1988-12-22 1993-10-12 Nikon Corporation Illumination optical arrangement
JPH07104442B2 (en) 1989-04-06 1995-11-13 旭硝子株式会社 Method for producing magnesium fluoride film and low reflection film
DE3907136A1 (en) 1989-03-06 1990-09-13 Jagenberg Ag DEVICE FOR JOINING MATERIAL RAILS
JPH02261073A (en) 1989-03-29 1990-10-23 Sony Corp Ultrasonic motor
JPH02287308A (en) 1989-04-03 1990-11-27 Mikhailovich Khodosovich Vladimir Method for centering lenses in optical unit mount
JPH02285320A (en) 1989-04-27 1990-11-22 Olympus Optical Co Ltd Stop device for endoscope
JP2527807B2 (en) 1989-05-09 1996-08-28 住友大阪セメント株式会社 Optical associative identification device
JPH02298431A (en) 1989-05-12 1990-12-10 Mitsubishi Electric Corp Electric discharge machining device
JPH02311237A (en) 1989-05-25 1990-12-26 Fuji Electric Co Ltd Carrying device
JPH0341399A (en) 1989-07-10 1991-02-21 Nikon Corp Manufacture of multilayered film reflecting mirror
JPH0364811A (en) 1989-07-31 1991-03-20 Okazaki Seisakusho:Kk Hollow core wire mi cable and manufacture thereof
JPH0372298A (en) 1989-08-14 1991-03-27 Nikon Corp Manufacture of multilayer film reflecting mirror
JPH0394445A (en) 1989-09-06 1991-04-19 Mitsubishi Electric Corp Semiconductor wafer transfer system
JPH03132663A (en) 1989-10-18 1991-06-06 Fujitsu Ltd Pellicle
JPH03134341A (en) 1989-10-20 1991-06-07 Fuji Photo Film Co Ltd Damper mechanism, vibrationproof mechanism and optical beam scanning device into which this damper mechanism, etc. are incorporated
JP2784225B2 (en) 1989-11-28 1998-08-06 双葉電子工業株式会社 Relative displacement measurement device
JP3067142B2 (en) 1989-11-28 2000-07-17 富士通株式会社 Photomask inspection apparatus and photomask inspection method
JPH03211812A (en) 1990-01-17 1991-09-17 Canon Inc Exposure aligner
JPH03263810A (en) 1990-03-14 1991-11-25 Sumitomo Heavy Ind Ltd Vibration control method of semiconductor aligner
JP2624560B2 (en) 1990-04-20 1997-06-25 日鐵溶接工業株式会社 Flux-cored wire for gas shielded arc welding
JPH0710897B2 (en) 1990-04-27 1995-02-08 日本油脂株式会社 Plastic lens
JPH0432154A (en) 1990-05-25 1992-02-04 Iwasaki Electric Co Ltd Metal halide lamp device
JP2897355B2 (en) 1990-07-05 1999-05-31 株式会社ニコン Alignment method, exposure apparatus, and position detection method and apparatus
JP3077176B2 (en) 1990-08-13 2000-08-14 株式会社ニコン Exposure method, apparatus, and element manufacturing method
JP3049774B2 (en) 1990-12-27 2000-06-05 株式会社ニコン Projection exposure apparatus and method, and element manufacturing method
JPH04130710A (en) 1990-09-21 1992-05-01 Hitachi Ltd Apparatus for exposure of light
JP2548834B2 (en) 1990-09-25 1996-10-30 三菱電機株式会社 Electron beam dimension measuring device
JPH04133414A (en) 1990-09-26 1992-05-07 Nec Yamaguchi Ltd Reduced projection and aligner
JPH04152512A (en) 1990-10-16 1992-05-26 Fujitsu Ltd Wafer chuck
DE4033556A1 (en) 1990-10-22 1992-04-23 Suess Kg Karl MEASURING ARRANGEMENT FOR X, Y, (PHI) COORDINATE TABLES
US5072126A (en) 1990-10-31 1991-12-10 International Business Machines Corporation Promixity alignment using polarized illumination and double conjugate projection lens
JPH04179115A (en) 1990-11-08 1992-06-25 Nec Kyushu Ltd Contracted projection aligner
US6252647B1 (en) 1990-11-15 2001-06-26 Nikon Corporation Projection exposure apparatus
JP3094439B2 (en) 1990-11-21 2000-10-03 株式会社ニコン Exposure method
JPH0480052U (en) 1990-11-27 1992-07-13
JPH04235558A (en) 1991-01-11 1992-08-24 Toshiba Corp Exposure device
JP3084760B2 (en) 1991-02-28 2000-09-04 株式会社ニコン Exposure method and exposure apparatus
JP3255168B2 (en) 1991-02-28 2002-02-12 株式会社ニコン Exposure method, device manufacturing method using the exposure method, and exposure apparatus
JP3084761B2 (en) 1991-02-28 2000-09-04 株式会社ニコン Exposure method and mask
JP2860174B2 (en) 1991-03-05 1999-02-24 三菱電機株式会社 Chemical vapor deposition equipment
JP3200894B2 (en) 1991-03-05 2001-08-20 株式会社日立製作所 Exposure method and apparatus
JPH04280619A (en) 1991-03-08 1992-10-06 Canon Inc Wafer retaining method and retaining device
JPH04282539A (en) 1991-03-11 1992-10-07 Hitachi Ltd Method for forming reflection-charge preventing film
JPH05259069A (en) 1991-03-13 1993-10-08 Tokyo Electron Ltd Method of exposing periphery of wafer
JPH04211110A (en) 1991-03-20 1992-08-03 Hitachi Ltd Projection aligner and aligning method
JPH04296092A (en) 1991-03-26 1992-10-20 Matsushita Electric Ind Co Ltd Reflow device
JP2602345Y2 (en) 1991-03-29 2000-01-11 京セラ株式会社 Hydrostatic bearing device
US5251222A (en) 1991-04-01 1993-10-05 Teledyne Industries, Inc. Active multi-stage cavity sensor
JPH04305917A (en) 1991-04-02 1992-10-28 Nikon Corp Adhesion type exposure device
JPH04305915A (en) 1991-04-02 1992-10-28 Nikon Corp Adhesion type exposure device
JP3200874B2 (en) 1991-07-10 2001-08-20 株式会社ニコン Projection exposure equipment
JPH04330961A (en) 1991-05-01 1992-11-18 Matsushita Electron Corp Development processing equipment
FR2676288B1 (en) 1991-05-07 1994-06-17 Thomson Csf LIGHT COLLECTOR FOR PROJECTOR.
JPH04343307A (en) 1991-05-20 1992-11-30 Ricoh Co Ltd Laser adjusting device
JP2884830B2 (en) 1991-05-28 1999-04-19 キヤノン株式会社 Automatic focusing device
JPH0590128A (en) 1991-06-13 1993-04-09 Nikon Corp Aligner
JPH0545886A (en) 1991-08-12 1993-02-26 Nikon Corp Exposure device for square substrate
US5272501A (en) 1991-08-28 1993-12-21 Nikon Corporation Projection exposure apparatus
JPH0562877A (en) 1991-09-02 1993-03-12 Yasuko Shinohara Optical system for lsi manufacturing contraction projection aligner by light
US5348837A (en) 1991-09-24 1994-09-20 Hitachi, Ltd. Projection exposure apparatus and pattern forming method for use therewith
JPH05109601A (en) 1991-10-15 1993-04-30 Nikon Corp Aligner and exposure method
JPH05129184A (en) 1991-10-30 1993-05-25 Canon Inc Projection aligner
JPH05127086A (en) 1991-11-01 1993-05-25 Matsushita Electric Ind Co Ltd Method for uniformizing light intensity and exposure device using the same
JP3203719B2 (en) 1991-12-26 2001-08-27 株式会社ニコン Exposure apparatus, device manufactured by the exposure apparatus, exposure method, and device manufacturing method using the exposure method
JPH05199680A (en) 1992-01-17 1993-08-06 Honda Motor Co Ltd Power supply
JPH0794969B2 (en) 1992-01-29 1995-10-11 株式会社ソルテック Positioning method and device thereof
JP3194155B2 (en) 1992-01-31 2001-07-30 キヤノン株式会社 Semiconductor device manufacturing method and projection exposure apparatus using the same
JPH05217837A (en) 1992-02-04 1993-08-27 Toshiba Corp X-y movable table
JP2796005B2 (en) 1992-02-10 1998-09-10 三菱電機株式会社 Projection exposure apparatus and polarizer
JPH05241324A (en) 1992-02-26 1993-09-21 Nikon Corp Photomask and exposing method
JP3153372B2 (en) 1992-02-26 2001-04-09 東京エレクトロン株式会社 Substrate processing equipment
JPH05243364A (en) 1992-03-02 1993-09-21 Hitachi Ltd Eliminating method for charge from semiconductor wafer and semiconductor integrated circuit manufacturing apparatus using same
JP3278896B2 (en) 1992-03-31 2002-04-30 キヤノン株式会社 Illumination apparatus and projection exposure apparatus using the same
JPH05304072A (en) 1992-04-08 1993-11-16 Nec Corp Manufacture of semiconductor device
JP3242693B2 (en) 1992-05-15 2001-12-25 富士通株式会社 Pellicle sticking device
JP2673130B2 (en) 1992-05-20 1997-11-05 株式会社キトー Suspension support device for traveling rail
JP2929839B2 (en) * 1992-06-17 1999-08-03 住友電装株式会社 Wire harness production management method
JP2946950B2 (en) 1992-06-25 1999-09-13 キヤノン株式会社 Illumination apparatus and exposure apparatus using the same
JPH0629204A (en) 1992-07-08 1994-02-04 Fujitsu Ltd Method and apparatus for development of resist
JPH0636054A (en) 1992-07-20 1994-02-10 Mitsubishi Electric Corp One-chip microcomputer
JP3246615B2 (en) * 1992-07-27 2002-01-15 株式会社ニコン Illumination optical device, exposure apparatus, and exposure method
JPH06188169A (en) * 1992-08-24 1994-07-08 Canon Inc Method of image formation, exposure system, and manufacture of device
JPH07318847A (en) 1994-05-26 1995-12-08 Nikon Corp Illumination optical device
JPH06104167A (en) 1992-09-18 1994-04-15 Hitachi Ltd Manufacture of aligner and semiconductor device
JP2884947B2 (en) 1992-10-01 1999-04-19 株式会社ニコン Projection exposure apparatus, exposure method, and method of manufacturing semiconductor integrated circuit
JPH06118623A (en) 1992-10-07 1994-04-28 Fujitsu Ltd Reticle and semiconductor aligner using the same
JPH06124873A (en) 1992-10-09 1994-05-06 Canon Inc Liquid-soaking type projection exposure apparatus
JP2724787B2 (en) 1992-10-09 1998-03-09 キヤノン株式会社 Positioning device
US5459000A (en) 1992-10-14 1995-10-17 Canon Kabushiki Kaisha Image projection method and device manufacturing method using the image projection method
JPH06124872A (en) * 1992-10-14 1994-05-06 Canon Inc Image forming method and manufacture of semiconductor device using the method
JP3322274B2 (en) 1992-10-29 2002-09-09 株式会社ニコン Projection exposure method and projection exposure apparatus
JPH06148399A (en) 1992-11-05 1994-05-27 Nikon Corp Multilayer film mirror for x rays and x-ray microscope
JPH06163350A (en) 1992-11-19 1994-06-10 Matsushita Electron Corp Projection exposure method and device thereof
JP2753930B2 (en) 1992-11-27 1998-05-20 キヤノン株式会社 Immersion type projection exposure equipment
JP3180133B2 (en) 1992-12-01 2001-06-25 日本電信電話株式会社 Projection exposure equipment
JPH06177007A (en) 1992-12-01 1994-06-24 Nippon Telegr & Teleph Corp <Ntt> Projection aligner
JP2866267B2 (en) 1992-12-11 1999-03-08 三菱電機株式会社 Optical drawing apparatus and optical drawing method for wafer substrate
JPH06181157A (en) 1992-12-15 1994-06-28 Nikon Corp Apparatus with low dust-generating property
JPH06186025A (en) 1992-12-16 1994-07-08 Yunisun:Kk Three dimensional measuring device
JP2520833B2 (en) 1992-12-21 1996-07-31 東京エレクトロン株式会社 Immersion type liquid treatment device
JP3201027B2 (en) 1992-12-22 2001-08-20 株式会社ニコン Projection exposure apparatus and method
JP3316833B2 (en) 1993-03-26 2002-08-19 株式会社ニコン Scanning exposure method, surface position setting device, scanning type exposure device, and device manufacturing method using the method
JPH06204121A (en) 1992-12-28 1994-07-22 Canon Inc Illuminator and projection aligner using the same
JP2765422B2 (en) 1992-12-28 1998-06-18 キヤノン株式会社 Exposure apparatus and method for manufacturing semiconductor device using the same
JP2786070B2 (en) 1993-01-29 1998-08-13 セントラル硝子株式会社 Inspection method and apparatus for transparent plate
JPH07245258A (en) 1994-03-08 1995-09-19 Nikon Corp Exposure and exposure device
JPH06241720A (en) 1993-02-18 1994-09-02 Sony Corp Measuring method for displacement quantity and displacement meter
JPH06244082A (en) 1993-02-19 1994-09-02 Nikon Corp Projection exposure device
JP3412704B2 (en) 1993-02-26 2003-06-03 株式会社ニコン Projection exposure method and apparatus, and exposure apparatus
JP3747958B2 (en) 1995-04-07 2006-02-22 株式会社ニコン Catadioptric optics
JP3291818B2 (en) 1993-03-16 2002-06-17 株式会社ニコン Projection exposure apparatus and semiconductor integrated circuit manufacturing method using the apparatus
JP3537843B2 (en) 1993-03-19 2004-06-14 株式会社テクノ菱和 Clean room ionizer
JPH0777191B2 (en) 1993-04-06 1995-08-16 日本電気株式会社 Exposure light projection device
JP3309871B2 (en) 1993-04-27 2002-07-29 株式会社ニコン Projection exposure method and apparatus, and element manufacturing method
JPH06326174A (en) 1993-05-12 1994-11-25 Hitachi Ltd Vacuum suction device for wafer
DE00203732T1 (en) * 1993-05-25 2006-07-13 Nordson Corp., Westlake Powder coating system
JP3265503B2 (en) 1993-06-11 2002-03-11 株式会社ニコン Exposure method and apparatus
JP3463335B2 (en) 1994-02-17 2003-11-05 株式会社ニコン Projection exposure equipment
US5677757A (en) 1994-03-29 1997-10-14 Nikon Corporation Projection exposure apparatus
JP3291849B2 (en) 1993-07-15 2002-06-17 株式会社ニコン Exposure method, device formation method, and exposure apparatus
US6304317B1 (en) 1993-07-15 2001-10-16 Nikon Corporation Projection apparatus and method
JPH0757993A (en) * 1993-08-13 1995-03-03 Nikon Corp Projection aligner
JPH0757992A (en) * 1993-08-13 1995-03-03 Nikon Corp Projection aligner
JP3844787B2 (en) 1993-09-02 2006-11-15 日産化学工業株式会社 Magnesium fluoride hydrate sol and its production method
JP3359123B2 (en) 1993-09-20 2002-12-24 キヤノン株式会社 Aberration correction optical system
JP3099933B2 (en) 1993-12-28 2000-10-16 株式会社東芝 Exposure method and exposure apparatus
KR0153796B1 (en) 1993-09-24 1998-11-16 사토 후미오 Exposure apparatus and method
JPH07122469A (en) 1993-10-20 1995-05-12 Nikon Corp Projection aligner
JP3505810B2 (en) 1993-10-29 2004-03-15 株式会社日立製作所 Pattern exposure method and apparatus
KR0166612B1 (en) * 1993-10-29 1999-02-01 가나이 쓰토무 Method and apparatus for exposing pattern, mask used therefor and semiconductor integrated circuit formed by using the same
JP3376045B2 (en) 1993-11-09 2003-02-10 キヤノン株式会社 Scanning exposure apparatus and device manufacturing method using the scanning exposure apparatus
JP3339144B2 (en) 1993-11-11 2002-10-28 株式会社ニコン Scanning exposure apparatus and exposure method
JPH07134955A (en) 1993-11-11 1995-05-23 Hitachi Ltd Display apparatus and reflectance controlling method of apparatus thereof
JP3278303B2 (en) 1993-11-12 2002-04-30 キヤノン株式会社 Scanning exposure apparatus and device manufacturing method using the scanning exposure apparatus
JPH07147223A (en) 1993-11-26 1995-06-06 Hitachi Ltd Pattern forming method
EP0656555B1 (en) 1993-12-01 2003-03-19 Sharp Kabushiki Kaisha Display for 3D images
JPH07161622A (en) * 1993-12-10 1995-06-23 Nikon Corp Projection aligner
JPH07167998A (en) 1993-12-15 1995-07-04 Nikon Corp Target for laser plasma x-ray source
JP3487517B2 (en) 1993-12-16 2004-01-19 株式会社リコー Reciprocating device
JP3508190B2 (en) 1993-12-21 2004-03-22 セイコーエプソン株式会社 Lighting device and projection display device
JPH07183201A (en) * 1993-12-21 1995-07-21 Nec Corp Exposure device and method therefor
JPH07190741A (en) 1993-12-27 1995-07-28 Nippon Telegr & Teleph Corp <Ntt> Measuring error correction method
JPH07220989A (en) 1994-01-27 1995-08-18 Canon Inc Exposure apparatus and manufacture of device using the same
JPH07220990A (en) 1994-01-28 1995-08-18 Hitachi Ltd Pattern forming method and exposure apparatus therefor
JP2715895B2 (en) 1994-01-31 1998-02-18 日本電気株式会社 Light intensity distribution simulation method
JP3372633B2 (en) 1994-02-04 2003-02-04 キヤノン株式会社 Positioning method and positioning apparatus using the same
US5559583A (en) 1994-02-24 1996-09-24 Nec Corporation Exposure system and illuminating apparatus used therein and method for exposing a resist film on a wafer
JP2836483B2 (en) 1994-05-13 1998-12-14 日本電気株式会社 Illumination optics
JPH07239212A (en) 1994-02-28 1995-09-12 Nikon Corp Position detector
JPH07243814A (en) 1994-03-03 1995-09-19 Fujitsu Ltd Measuring method of line width
JPH07263315A (en) * 1994-03-25 1995-10-13 Toshiba Corp Projection aligner
US6333776B1 (en) 1994-03-29 2001-12-25 Nikon Corporation Projection exposure apparatus
US20020080338A1 (en) 1994-03-29 2002-06-27 Nikon Corporation Projection exposure apparatus
US5874820A (en) 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
US5528118A (en) 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
JPH07283119A (en) * 1994-04-14 1995-10-27 Hitachi Ltd Aligner and exposure method
JP3193567B2 (en) 1994-04-27 2001-07-30 キヤノン株式会社 Substrate storage container
JP3555230B2 (en) 1994-05-18 2004-08-18 株式会社ニコン Projection exposure equipment
JPH07335748A (en) 1994-06-07 1995-12-22 Miyazaki Oki Electric Co Ltd Manufacture of semiconductor element
EP0687956B2 (en) 1994-06-17 2005-11-23 Carl Zeiss SMT AG Illumination device
US5473465A (en) 1994-06-24 1995-12-05 Ye; Chun Optical rotator and rotation-angle-variable half-waveplate rotator
JP3800616B2 (en) 1994-06-27 2006-07-26 株式会社ニコン Target moving device, positioning device, and movable stage device
JP3205663B2 (en) 1994-06-29 2001-09-04 日本電子株式会社 Charged particle beam equipment
JP3090577B2 (en) 1994-06-29 2000-09-25 浜松ホトニクス株式会社 Conductor layer removal method and system
JPH0822948A (en) 1994-07-08 1996-01-23 Nikon Corp Scanning aligner
JP3205468B2 (en) 1994-07-25 2001-09-04 株式会社日立製作所 Processing apparatus and exposure apparatus having wafer chuck
JPH0846751A (en) 1994-07-29 1996-02-16 Sanyo Electric Co Ltd Illumination optical system
JP3613288B2 (en) 1994-10-18 2005-01-26 株式会社ニコン Cleaning device for exposure apparatus
DE69533645T2 (en) 1994-10-26 2006-02-23 Seiko Epson Corp. LIQUID CRYSTAL DEVICE AND ELECTRONIC DEVICE
JPH08136475A (en) 1994-11-14 1996-05-31 Kawasaki Steel Corp Surface observing apparatus for plate-like material
JPH08151220A (en) 1994-11-28 1996-06-11 Nippon Sekiei Glass Kk Method for molding quartz glass
JPH08162397A (en) 1994-11-30 1996-06-21 Canon Inc Projection light exposure device and manufacture of semiconductor device by use thereof
JPH08171054A (en) 1994-12-16 1996-07-02 Nikon Corp Reflection refraction optical system
JPH08195375A (en) 1995-01-17 1996-07-30 Sony Corp Spin-drying method and spin-dryer
JPH08203803A (en) 1995-01-24 1996-08-09 Nikon Corp Exposure apparatus
JP3521544B2 (en) 1995-05-24 2004-04-19 株式会社ニコン Exposure equipment
JP3312164B2 (en) 1995-04-07 2002-08-05 日本電信電話株式会社 Vacuum suction device
JPH08297699A (en) 1995-04-26 1996-11-12 Hitachi Ltd System and method for supporting production failure analysis and production system
JPH08316125A (en) 1995-05-19 1996-11-29 Hitachi Ltd Method and apparatus for projection exposing
US5663785A (en) 1995-05-24 1997-09-02 International Business Machines Corporation Diffraction pupil filler modified illuminator for annular pupil fills
US5680588A (en) 1995-06-06 1997-10-21 International Business Machines Corporation Method and system for optimizing illumination in an optical photolithography projection imaging system
JP3531297B2 (en) 1995-06-19 2004-05-24 株式会社ニコン Projection exposure apparatus and projection exposure method
KR0155830B1 (en) 1995-06-19 1998-11-16 김광호 Advanced exposure apparatus and exposure method using the same
KR100474578B1 (en) 1995-06-23 2005-06-21 가부시키가이샤 니콘 Exp0sure apparatus
JP3561556B2 (en) 1995-06-29 2004-09-02 株式会社ルネサステクノロジ Manufacturing method of mask
JP3637639B2 (en) 1995-07-10 2005-04-13 株式会社ニコン Exposure equipment
JPH09108551A (en) 1995-08-11 1997-04-28 Mitsubishi Rayon Co Ltd Water purifier
JPH0961686A (en) 1995-08-23 1997-03-07 Nikon Corp Plastic lens
JPH0982626A (en) 1995-09-12 1997-03-28 Nikon Corp Projection exposure device
JP3487527B2 (en) 1995-09-14 2004-01-19 株式会社東芝 Light refraction device
US5815247A (en) 1995-09-21 1998-09-29 Siemens Aktiengesellschaft Avoidance of pattern shortening by using off axis illumination with dipole and polarizing apertures
JPH0992593A (en) 1995-09-21 1997-04-04 Nikon Corp Projection exposure system
JP3433403B2 (en) 1995-10-16 2003-08-04 三星電子株式会社 Stepper interface device
JPH09134870A (en) 1995-11-10 1997-05-20 Hitachi Ltd Method and device for forming pattern
JPH09148406A (en) 1995-11-24 1997-06-06 Dainippon Screen Mfg Co Ltd Substrate carrying apparatus
JPH09151658A (en) 1995-11-30 1997-06-10 Nichibei Co Ltd Runner connection device for mobile partition wall
JPH09160004A (en) 1995-12-01 1997-06-20 Denso Corp Liquid crystal cell and its empty cell
JP3406957B2 (en) * 1995-12-06 2003-05-19 キヤノン株式会社 Optical element and exposure apparatus using the same
JPH09162106A (en) 1995-12-11 1997-06-20 Nikon Corp Scanning aligner
JPH09178415A (en) 1995-12-25 1997-07-11 Nikon Corp Light wave interference measuring device
JPH09184787A (en) 1995-12-28 1997-07-15 Olympus Optical Co Ltd Analysis/evaluation device for optical lens
JP3232473B2 (en) 1996-01-10 2001-11-26 キヤノン株式会社 Projection exposure apparatus and device manufacturing method using the same
JP3189661B2 (en) 1996-02-05 2001-07-16 ウシオ電機株式会社 Light source device
JP3576685B2 (en) 1996-02-07 2004-10-13 キヤノン株式会社 Exposure apparatus and device manufacturing method using the same
JPH09232213A (en) 1996-02-26 1997-09-05 Nikon Corp Projection aligner
JPH09227294A (en) 1996-02-26 1997-09-02 Toyo Commun Equip Co Ltd Production of artificial quartz crystal
JPH09243892A (en) 1996-03-06 1997-09-19 Matsushita Electric Ind Co Ltd Optical element
JP3782151B2 (en) 1996-03-06 2006-06-07 キヤノン株式会社 Gas supply device for excimer laser oscillator
JP3601174B2 (en) 1996-03-14 2004-12-15 株式会社ニコン Exposure apparatus and exposure method
JPH09281077A (en) 1996-04-16 1997-10-31 Hitachi Ltd Capillary electrophoretic apparatus
RU2084941C1 (en) 1996-05-06 1997-07-20 Йелстаун Корпорейшн Н.В. Adaptive optical module
JP2691341B2 (en) 1996-05-27 1997-12-17 株式会社ニコン Projection exposure equipment
JPH09326338A (en) 1996-06-04 1997-12-16 Nikon Corp Production management system
JPH09325255A (en) 1996-06-06 1997-12-16 Olympus Optical Co Ltd Electronic camera
JPH103039A (en) 1996-06-14 1998-01-06 Nikon Corp Reflective/refractive optical system
JPH102865A (en) 1996-06-18 1998-01-06 Nikon Corp Inspecting device of reticle and inspecting method therefor
JPH1020195A (en) 1996-06-28 1998-01-23 Nikon Corp Cata-dioptric system
JPH1032160A (en) 1996-07-17 1998-02-03 Toshiba Corp Pattern exposure method and device
JP3646415B2 (en) 1996-07-18 2005-05-11 ソニー株式会社 Mask defect detection method
JPH1038517A (en) 1996-07-23 1998-02-13 Canon Inc Optical displacement measuring instrument
JPH1079337A (en) 1996-09-04 1998-03-24 Nikon Corp Projection aligner
JP3646757B2 (en) 1996-08-22 2005-05-11 株式会社ニコン Projection exposure method and apparatus
JPH1055713A (en) 1996-08-08 1998-02-24 Ushio Inc Ultraviolet irradiation device
JPH1062305A (en) 1996-08-19 1998-03-06 Advantest Corp Sensitivity correcting method of ccd camera, and lcd panel display test system with ccd camera sensitivity correcting function
JPH1082611A (en) 1996-09-10 1998-03-31 Nikon Corp Apparatus for detecting position of face
JPH1092735A (en) 1996-09-13 1998-04-10 Nikon Corp Aligner
JP2914315B2 (en) 1996-09-20 1999-06-28 日本電気株式会社 Scanning reduction projection exposure apparatus and distortion measuring method
JPH10104427A (en) 1996-10-03 1998-04-24 Sankyo Seiki Mfg Co Ltd Wavelength plate, and optical pickup unit equipped with the same
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
DE19781041B4 (en) 1996-10-08 2010-02-18 Citizen Holdings Co., Ltd., Nishitokyo Optical device
JPH10116760A (en) 1996-10-08 1998-05-06 Nikon Corp Aligner and substrate holding device
JPH10116778A (en) 1996-10-09 1998-05-06 Canon Inc Scanning aligner
JPH10116779A (en) 1996-10-11 1998-05-06 Nikon Corp Stage device
JP3955985B2 (en) 1996-10-16 2007-08-08 株式会社ニコン Mark position detection apparatus and method
KR100191329B1 (en) 1996-10-23 1999-06-15 윤종용 Internet education method and device
JPH10135099A (en) 1996-10-25 1998-05-22 Sony Corp Exposure device and exposure method
JP3991166B2 (en) 1996-10-25 2007-10-17 株式会社ニコン Illumination optical apparatus and exposure apparatus provided with the illumination optical apparatus
JP4029183B2 (en) 1996-11-28 2008-01-09 株式会社ニコン Projection exposure apparatus and projection exposure method
JP4029182B2 (en) 1996-11-28 2008-01-09 株式会社ニコン Exposure method
JP3624065B2 (en) 1996-11-29 2005-02-23 キヤノン株式会社 Substrate transport apparatus, semiconductor manufacturing apparatus, and exposure apparatus
JPH10169249A (en) 1996-12-12 1998-06-23 Ohbayashi Corp Base isolating structure
JPH10189700A (en) 1996-12-20 1998-07-21 Sony Corp Wafer holding mechanism
DE69735016T2 (en) 1996-12-24 2006-08-17 Asml Netherlands B.V. Lithographic device with two object holders
US5841500A (en) 1997-01-09 1998-11-24 Tellium, Inc. Wedge-shaped liquid crystal cell
JP2910716B2 (en) 1997-01-16 1999-06-23 日本電気株式会社 Parametric analysis method of light intensity calculation
JPH10206714A (en) 1997-01-20 1998-08-07 Canon Inc Lens moving device
JP2926325B2 (en) 1997-01-23 1999-07-28 株式会社ニコン Scanning exposure method
JPH10209018A (en) 1997-01-24 1998-08-07 Nippon Telegr & Teleph Corp <Ntt> X-ray mask frame and maintenance of x-ray mask
JP3612920B2 (en) 1997-02-14 2005-01-26 ソニー株式会社 Exposure apparatus for producing an optical recording medium master
JPH10255319A (en) 1997-03-12 1998-09-25 Hitachi Maxell Ltd Master disk exposure device and method therefor
JPH10294268A (en) 1997-04-16 1998-11-04 Nikon Corp Projection aligner and positioning method
JP3747566B2 (en) 1997-04-23 2006-02-22 株式会社ニコン Immersion exposure equipment
JPH118194A (en) 1997-04-25 1999-01-12 Nikon Corp Exposure condition measuring method, and evaluation method and lithography system for projection optical system
KR100261888B1 (en) 1997-04-30 2000-07-15 전주범 Method for processing the user information of a digital video disc recorder
JP3817836B2 (en) 1997-06-10 2006-09-06 株式会社ニコン EXPOSURE APPARATUS, ITS MANUFACTURING METHOD, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD
JPH113856A (en) 1997-06-11 1999-01-06 Canon Inc Method and device for projection exposure
JPH113849A (en) 1997-06-12 1999-01-06 Sony Corp Deformable illumination filter and semiconductor aligner
JP3233341B2 (en) 1997-06-12 2001-11-26 船井電機株式会社 Bread maker and recording medium used therein
JPH1114876A (en) 1997-06-19 1999-01-22 Nikon Corp Optical structural body, projection exposing optical system incorporating the same and projection aligner
JPH1116816A (en) 1997-06-25 1999-01-22 Nikon Corp Projection aligner, method for exposure with the device, and method for manufacturing circuit device using the device
JPH1140657A (en) 1997-07-23 1999-02-12 Nikon Corp Sample holding device and scanning-type aligner
US6829041B2 (en) 1997-07-29 2004-12-07 Canon Kabushiki Kaisha Projection optical system and projection exposure apparatus having the same
JP3413074B2 (en) 1997-08-29 2003-06-03 キヤノン株式会社 Exposure apparatus and device manufacturing method
JPH1187237A (en) 1997-09-10 1999-03-30 Nikon Corp Alignment device
JP4164905B2 (en) 1997-09-25 2008-10-15 株式会社ニコン Electromagnetic force motor, stage apparatus and exposure apparatus
JP2000106340A (en) 1997-09-26 2000-04-11 Nikon Corp Aligner, scanning exposure method, and stage device
JPH11111819A (en) 1997-09-30 1999-04-23 Asahi Kasei Micro Syst Co Ltd Wafer fixing method and light exposing device
JPH11111818A (en) 1997-10-03 1999-04-23 Oki Electric Ind Co Ltd Holding device and holder for wafer
JPH11111601A (en) 1997-10-06 1999-04-23 Nikon Corp Method and device for exposure
JPH11195602A (en) 1997-10-07 1999-07-21 Nikon Corp Projection exposing method and device
JP3097620B2 (en) 1997-10-09 2000-10-10 日本電気株式会社 Scanning reduction projection exposure equipment
JP4210871B2 (en) 1997-10-31 2009-01-21 株式会社ニコン Exposure equipment
JPH11142556A (en) 1997-11-13 1999-05-28 Nikon Corp Controlling method for stage, stage device and exposing device thereof
JPH11150062A (en) 1997-11-14 1999-06-02 Nikon Corp Vibration isolator, aligner, and method for canceling vibration of vibration canceling base
JPH11162831A (en) 1997-11-21 1999-06-18 Nikon Corp Projection aligner and projection aligning method
WO1999027568A1 (en) 1997-11-21 1999-06-03 Nikon Corporation Projection aligner and projection exposure method
JPH11283903A (en) 1998-03-30 1999-10-15 Nikon Corp Projection optical system inspection device and projection aligner provided with the device
JPH11163103A (en) 1997-11-25 1999-06-18 Hitachi Ltd Method and device for manufacturing semiconductor device
JPH11159571A (en) 1997-11-28 1999-06-15 Nikon Corp Machine device, exposure device and its operating method
JPH11166990A (en) 1997-12-04 1999-06-22 Nikon Corp Stage device, exposure device and scanning exposure device
JPH11176727A (en) 1997-12-11 1999-07-02 Nikon Corp Projection aligner
JP3673633B2 (en) 1997-12-16 2005-07-20 キヤノン株式会社 Assembling and adjusting method of projection optical system
WO1999031716A1 (en) 1997-12-16 1999-06-24 Nikon Corporation Aligner, exposure method and method of manufacturing device
TW449672B (en) 1997-12-25 2001-08-11 Nippon Kogaku Kk Process and apparatus for manufacturing photomask and method of manufacturing the same
AU1689899A (en) 1997-12-26 1999-07-19 Nikon Corporation Exposure method and exposure apparatus
JPH11204390A (en) 1998-01-14 1999-07-30 Canon Inc Semiconductor manufacturing equipment and device manufacture
JPH11219882A (en) 1998-02-02 1999-08-10 Nikon Corp Stage and aligner
JP3820728B2 (en) 1998-02-04 2006-09-13 東レ株式会社 Substrate measuring device
JPH11288879A (en) 1998-02-04 1999-10-19 Hitachi Ltd Exposure conditions detecting method and device thereof, and manufacture of semiconductor device
JPH11233434A (en) 1998-02-17 1999-08-27 Nikon Corp Exposure condition determining method, exposure method, aligner, and manufacture of device
JP4207240B2 (en) 1998-02-20 2009-01-14 株式会社ニコン Illuminometer for exposure apparatus, lithography system, illuminometer calibration method, and microdevice manufacturing method
JPH11239758A (en) 1998-02-26 1999-09-07 Dainippon Screen Mfg Co Ltd Substrate treatment apparatus
JPH11260791A (en) 1998-03-10 1999-09-24 Toshiba Mach Co Ltd Drying method of semiconductor wafer and drying equipment
JPH11260686A (en) 1998-03-11 1999-09-24 Toshiba Corp Exposure method
JPH11264756A (en) 1998-03-18 1999-09-28 Tokyo Electron Ltd Level detector and level detecting method, and substrate processing device
WO1999049366A1 (en) 1998-03-20 1999-09-30 Nikon Corporation Photomask and projection exposure system
JP4329266B2 (en) * 1998-03-24 2009-09-09 株式会社ニコン Illumination apparatus, exposure method and apparatus, and device manufacturing method
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
KR20010042133A (en) 1998-03-26 2001-05-25 오노 시게오 Exposure method and system, photomask, method of manufacturing photomask, micro-device and method of manufacturing micro-device
DE69931690T2 (en) 1998-04-08 2007-06-14 Asml Netherlands B.V. Lithographic apparatus
JPH11307610A (en) 1998-04-22 1999-11-05 Nikon Corp Substrate transfer equipment and aligner
JPH11312631A (en) 1998-04-27 1999-11-09 Nikon Corp Illuminating optical device and aligner
US6238063B1 (en) 1998-04-27 2001-05-29 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
JP4090115B2 (en) 1998-06-09 2008-05-28 信越ポリマー株式会社 Substrate storage container
JP3985346B2 (en) 1998-06-12 2007-10-03 株式会社ニコン Projection exposure apparatus, projection exposure apparatus adjustment method, and projection exposure method
WO1999066370A1 (en) 1998-06-17 1999-12-23 Nikon Corporation Method for producing mask
JP2000012453A (en) 1998-06-18 2000-01-14 Nikon Corp Aligner and its using method, exposure method, and manufacturing method of mask
JP2000021748A (en) 1998-06-30 2000-01-21 Canon Inc Method of exposure and exposure equipment
JP2000021742A (en) 1998-06-30 2000-01-21 Canon Inc Method of exposure and exposure equipment
JP2000032403A (en) 1998-07-14 2000-01-28 Sony Corp Data transmission method, data transmitter and receiver thereof
JP2000029202A (en) 1998-07-15 2000-01-28 Nikon Corp Production of mask
JP2000036449A (en) 1998-07-17 2000-02-02 Nikon Corp Aligner
JP2000058436A (en) 1998-08-11 2000-02-25 Nikon Corp Projection aligner and exposure method
AU4930099A (en) 1998-08-18 2000-03-14 Nikon Corporation Illuminator and projection exposure apparatus
JP2000081320A (en) 1998-09-03 2000-03-21 Canon Inc Face position detector and fabrication of device employing it
JP2000092815A (en) 1998-09-10 2000-03-31 Canon Inc Stage device and aligner using the same
JP4132397B2 (en) 1998-09-16 2008-08-13 積水化学工業株式会社 Photocurable resin composition, liquid crystal inlet sealing agent and liquid crystal display cell
JP2000097616A (en) 1998-09-22 2000-04-07 Nikon Corp Interferometer
JP4065923B2 (en) 1998-09-29 2008-03-26 株式会社ニコン Illumination apparatus, projection exposure apparatus including the illumination apparatus, projection exposure method using the illumination apparatus, and adjustment method of the projection exposure apparatus
JP2000121491A (en) 1998-10-20 2000-04-28 Nikon Corp Evaluation method for optical system
JP2001176766A (en) 1998-10-29 2001-06-29 Nikon Corp Illuminator and projection aligner
JP2000147346A (en) 1998-11-09 2000-05-26 Toshiba Corp Fitting mechanism for mold lens
JP2000180371A (en) 1998-12-11 2000-06-30 Sharp Corp Foreign matter inspecting apparatus and semiconductor process apparatus
US6563567B1 (en) 1998-12-17 2003-05-13 Nikon Corporation Method and apparatus for illuminating a surface using a projection imaging apparatus
EP1014196A3 (en) 1998-12-17 2002-05-29 Nikon Corporation Method and system of illumination for a projection optical apparatus
US6406148B1 (en) 1998-12-31 2002-06-18 Texas Instruments Incorporated Electronic color switching in field sequential video displays
JP4146952B2 (en) 1999-01-11 2008-09-10 キヤノン株式会社 Exposure apparatus and device manufacturing method
JP2000208407A (en) 1999-01-19 2000-07-28 Nikon Corp Aligner
JP2000243684A (en) 1999-02-18 2000-09-08 Canon Inc Aligner and device manufacture
JP2000240717A (en) 1999-02-19 2000-09-05 Canon Inc Active vibration resistant device
JP2000252201A (en) 1999-03-02 2000-09-14 Nikon Corp Method and device for detecting surface position, method and device for projection exposure using, and manufacture of semiconductor device
JP2000283889A (en) 1999-03-31 2000-10-13 Nikon Corp Inspection device and method of projection optical system, aligner, and manufacture of micro device
JP2000286176A (en) 1999-03-31 2000-10-13 Hitachi Ltd Semiconductor substrate processing unit and display method of its processing status
JP2001174615A (en) 1999-04-15 2001-06-29 Nikon Corp Diffraction optical element, method of producing the element, illumination device equipped with the element, projection exposure device, exposure method, light homogenizer, and method of producing the light homogenizer
AU4143000A (en) * 1999-04-28 2000-11-17 Nikon Corporation Exposure method and apparatus
DE19921795A1 (en) 1999-05-11 2000-11-23 Zeiss Carl Fa Projection exposure system and exposure method of microlithography
US6498869B1 (en) 1999-06-14 2002-12-24 Xiaotian Steve Yao Devices for depolarizing polarized light
JP2000003874A (en) 1999-06-15 2000-01-07 Nikon Corp Exposure method and aligner
JP2001007015A (en) 1999-06-25 2001-01-12 Canon Inc Stage device
WO2001003170A1 (en) 1999-06-30 2001-01-11 Nikon Corporation Exposure method and device
US6769273B1 (en) 1999-07-05 2004-08-03 Nikon Corporation Method of manufacturing silica glass member and silica glass member obtained by the method
JP2001020951A (en) 1999-07-07 2001-01-23 Toto Ltd Static pressure gas bearing
JP2001023996A (en) 1999-07-08 2001-01-26 Sony Corp Manufacturing method of semiconductor
DE10029938A1 (en) 1999-07-09 2001-07-05 Zeiss Carl Optical system for projection exposure device, includes optical element which consists of magnesium fluoride, as main constituent
JP2001037201A (en) 1999-07-21 2001-02-09 Nikon Corp Motor device, stage equipment and exposure device
JP2001100311A (en) 1999-07-23 2001-04-13 Seiko Epson Corp Projector
JP2001044097A (en) 1999-07-26 2001-02-16 Matsushita Electric Ind Co Ltd Aligner
US6280034B1 (en) 1999-07-30 2001-08-28 Philips Electronics North America Corporation Efficient two-panel projection system employing complementary illumination
JP3110023B1 (en) 1999-09-02 2000-11-20 岩堀 雅行 Fuel release device
JP4362857B2 (en) 1999-09-10 2009-11-11 株式会社ニコン Light source apparatus and exposure apparatus
JP2001083472A (en) 1999-09-10 2001-03-30 Nikon Corp Optical modulating device, light source device and exposure source
EP1139521A4 (en) 1999-09-10 2006-03-22 Nikon Corp Light source and wavelength stabilization control method, exposure apparatus and exposure method, method for producing exposure apparatus, and device manufacturing method and device
WO2001022480A1 (en) 1999-09-20 2001-03-29 Nikon Corporation Parallel link mechanism, exposure system and method of manufacturing the same, and method of manufacturing devices
WO2001023933A1 (en) 1999-09-29 2001-04-05 Nikon Corporation Projection optical system
WO2001023935A1 (en) 1999-09-29 2001-04-05 Nikon Corporation Projection exposure method and apparatus and projection optical system
JP2001097734A (en) 1999-09-30 2001-04-10 Toshiba Ceramics Co Ltd Quartz glass container and method for producing the same
KR100625625B1 (en) 1999-10-07 2006-09-20 가부시키가이샤 니콘 Substrate, stage device, method of driving stage, exposure system and exposure method
JP2001110707A (en) 1999-10-08 2001-04-20 Orc Mfg Co Ltd Optical system of peripheral aligner
JP2001118773A (en) 1999-10-18 2001-04-27 Nikon Corp Stage device and exposure system
JP2001135560A (en) 1999-11-04 2001-05-18 Nikon Corp Illuminating optical device, exposure, and method of manufacturing micro-device
WO2001035451A1 (en) * 1999-11-09 2001-05-17 Nikon Corporation Illuminator, aligner, and method for fabricating device
JP2001144004A (en) 1999-11-16 2001-05-25 Nikon Corp Exposing method, aligner and method of manufacturing device
JP2001167996A (en) 1999-12-10 2001-06-22 Tokyo Electron Ltd Substrate treatment apparatus
EP1109067B1 (en) 1999-12-13 2006-05-24 ASML Netherlands B.V. Illuminator
TW546550B (en) 1999-12-13 2003-08-11 Asml Netherlands Bv An illuminator for a lithography apparatus, a lithography apparatus comprising such an illuminator, and a manufacturing method employing such a lithography apparatus
JP2002118058A (en) 2000-01-13 2002-04-19 Nikon Corp Projection aligner and projection exposure method
JP2001203140A (en) 2000-01-20 2001-07-27 Nikon Corp Stage device, aligner and device manufacturing method
JP3413485B2 (en) 2000-01-31 2003-06-03 住友重機械工業株式会社 Thrust ripple measurement method for linear motor
JP2005233979A (en) 2000-02-09 2005-09-02 Nikon Corp Catadioptric system
JP4018309B2 (en) 2000-02-14 2007-12-05 松下電器産業株式会社 Circuit parameter extraction method, semiconductor integrated circuit design method and apparatus
JP2001228404A (en) 2000-02-14 2001-08-24 Nikon Engineering Co Ltd Vertical illumination type microscope, inspection apparatus for probe card and method for manufacturing probe card
JP3302965B2 (en) 2000-02-15 2002-07-15 株式会社東芝 Inspection method for exposure equipment
JP2001228401A (en) 2000-02-16 2001-08-24 Canon Inc Projection optical system, projection aligner by this projection optical system and method for manufacturing device
KR20010085493A (en) 2000-02-25 2001-09-07 시마무라 기로 Exposure apparatus, method for adjusting the same, and method for manufacturing device using the exposure apparatus
JP2002100561A (en) 2000-07-19 2002-04-05 Nikon Corp Aligning method and aligner and method for fabricating device
JP2001313250A (en) 2000-02-25 2001-11-09 Nikon Corp Aligner, its adjusting method, and method for fabricating device using aligner
JP2001242269A (en) 2000-03-01 2001-09-07 Nikon Corp Stage device, stage driving method, exposure device and exposure method
DE10010131A1 (en) * 2000-03-03 2001-09-06 Zeiss Carl Microlithography projection exposure with tangential polarization involves using light with preferred direction of polarization oriented perpendicularly with respect to plane of incidence
US7301605B2 (en) 2000-03-03 2007-11-27 Nikon Corporation Projection exposure apparatus and method, catadioptric optical system and manufacturing method of devices
JP2001265581A (en) 2000-03-21 2001-09-28 Canon Inc System and method for preventing illegal use of software
JP2001267227A (en) 2000-03-21 2001-09-28 Canon Inc Vibration isolating system, exposure system, and device manufacturing method
JP2001338868A (en) 2000-03-24 2001-12-07 Nikon Corp Illuminance-measuring device and aligner
JP2001272764A (en) * 2000-03-24 2001-10-05 Canon Inc Photomask for projection exposure and for projection exposure method using the photomask
JP4689064B2 (en) 2000-03-30 2011-05-25 キヤノン株式会社 Exposure apparatus and device manufacturing method
JP2001282526A (en) 2000-03-31 2001-10-12 Canon Inc Software management device, its method and computer readable storage medium
JP3927753B2 (en) * 2000-03-31 2007-06-13 キヤノン株式会社 Exposure apparatus and device manufacturing method
JP2001296105A (en) 2000-04-12 2001-10-26 Nikon Corp Surface-position detecting apparatus, and aligner and aligning method using the detecting apparatus
JP2001297976A (en) 2000-04-17 2001-10-26 Canon Inc Method of exposure and aligner
JP2001307983A (en) 2000-04-20 2001-11-02 Nikon Corp Stage device and aligner
JP3514439B2 (en) 2000-04-20 2004-03-31 キヤノン株式会社 Support structure for optical element, exposure apparatus configured using the support structure, and method for manufacturing devices and the like using the apparatus
JP2001304332A (en) 2000-04-24 2001-10-31 Canon Inc Active vibration damping device
JP2002014005A (en) 2000-04-25 2002-01-18 Nikon Corp Measuring method of spatial image, measuring method of imaging characteristic, measuring device for spatial image, and exposuring device
JP2003532282A (en) 2000-04-25 2003-10-28 エーエスエムエル ユーエス,インコーポレイテッド Optical reduction system without reticle diffraction induced bias
JP2002057097A (en) 2000-05-31 2002-02-22 Nikon Corp Aligner, and microdevice and its manufacturing method
JP2002016124A (en) 2000-06-28 2002-01-18 Sony Corp Wafer transporting arm mechanism
JP2002015978A (en) 2000-06-29 2002-01-18 Canon Inc Exposure system
JP2002043213A (en) 2000-07-25 2002-02-08 Nikon Corp Stage device and exposure system
EP1744193A1 (en) 2000-08-18 2007-01-17 Nikon Corporation Optical element holding device with drive mechanism allowing movement of the element along three coordinate axes
JP2002071513A (en) 2000-08-28 2002-03-08 Nikon Corp Interferometer for immersion microscope objective and evaluation method of the immersion microscope objective
JP4504537B2 (en) 2000-08-29 2010-07-14 芝浦メカトロニクス株式会社 Spin processing equipment
JP2002075835A (en) * 2000-08-30 2002-03-15 Nikon Corp Illumination optical device and exposure system with the same
US6373614B1 (en) 2000-08-31 2002-04-16 Cambridge Research Instrumentation Inc. High performance polarization controller and polarization sensor
JP2002093686A (en) 2000-09-19 2002-03-29 Nikon Corp Stage device and aligner
JP2002093690A (en) 2000-09-19 2002-03-29 Hitachi Ltd Method for manufacturing semiconductor device
JP2002091922A (en) 2000-09-20 2002-03-29 Fujitsu General Ltd Method and system for distributing and managing application software and contents
JP4245286B2 (en) 2000-10-23 2009-03-25 株式会社ニコン Catadioptric optical system and exposure apparatus provided with the optical system
JP2002141270A (en) 2000-11-01 2002-05-17 Nikon Corp Exposing system
US20020075467A1 (en) 2000-12-20 2002-06-20 Nikon Corporation Exposure apparatus and method
JP2002158157A (en) 2000-11-17 2002-05-31 Nikon Corp Illumination optical device and aligner and method for fabricating microdevice
JP2002162655A (en) * 2000-11-27 2002-06-07 Sony Corp Optical apparatus
JP2002170495A (en) 2000-11-28 2002-06-14 Akira Sekino Integrate barrier rib synthetic resin rear substrate
JP2002190438A (en) 2000-12-21 2002-07-05 Nikon Corp Projection aligner
JP2002198284A (en) 2000-12-25 2002-07-12 Nikon Corp Stage device and projection aligner
JP2002203763A (en) 2000-12-27 2002-07-19 Nikon Corp Optical characteristic measuring method and device, signal sensitivity setting method, exposure unit and device manufacturing method
JP2002195912A (en) 2000-12-27 2002-07-10 Nikon Corp Method and apparatus for measuring optical property, exposure apparatus and method for producing device
JP2002202221A (en) 2000-12-28 2002-07-19 Nikon Corp Position detection method, position detector, optical characteristic measuring method, optical characteristic measuring device, exposure device, and device manufacturing method
JP3495992B2 (en) 2001-01-26 2004-02-09 キヤノン株式会社 Correction apparatus, exposure apparatus, device manufacturing method and device
US6563566B2 (en) 2001-01-29 2003-05-13 International Business Machines Corporation System and method for printing semiconductor patterns using an optimized illumination and reticle
JP2002229215A (en) * 2001-01-30 2002-08-14 Nikon Corp Exposure method and exposure device
JP2002227924A (en) 2001-01-31 2002-08-14 Canon Inc Vibration control damper and exposure apparatus with vibration control damper
WO2002063664A1 (en) 2001-02-06 2002-08-15 Nikon Corporation Exposure system and exposure method, and device production method
TWI285295B (en) 2001-02-23 2007-08-11 Asml Netherlands Bv Illumination optimization in lithography
DE10113612A1 (en) 2001-02-23 2002-09-05 Zeiss Carl Sub-objective for illumination system has two lens groups, second lens group with at least first lens with negative refractive index and at least second lens with positive refractive index
JP4714403B2 (en) 2001-02-27 2011-06-29 エーエスエムエル ユーエス,インコーポレイテッド Method and apparatus for exposing a dual reticle image
JP2002258487A (en) 2001-02-28 2002-09-11 Nikon Corp Method and device for aligner
JP4501292B2 (en) 2001-03-05 2010-07-14 コニカミノルタホールディングス株式会社 Coating substrate, coating material coating method, and element manufacturing method
JP2002289505A (en) 2001-03-28 2002-10-04 Nikon Corp Aligner, method for adjusting the aligner and method for manufacturing micro-device
WO2002080185A1 (en) 2001-03-28 2002-10-10 Nikon Corporation Stage device, exposure device, and method of manufacturing device
JP2002365783A (en) 2001-04-05 2002-12-18 Sony Corp Apparatus of forming mask pattern, apparatus and method of manufacturing high-resolution mask as well as method of forming resist pattern
JP2002305140A (en) 2001-04-06 2002-10-18 Nikon Corp Aligner and substrate processing system
WO2002084850A1 (en) 2001-04-09 2002-10-24 Kabushiki Kaisha Yaskawa Denki Canned linear motor armature and canned linear motor
EP1384117A2 (en) 2001-04-24 2004-01-28 Canon Kabushiki Kaisha Exposure method and apparatus
JP3937903B2 (en) 2001-04-24 2007-06-27 キヤノン株式会社 Exposure method and apparatus
JP2002324743A (en) 2001-04-24 2002-11-08 Canon Inc Exposing method and equipment thereof
JP2002329651A (en) 2001-04-27 2002-11-15 Nikon Corp Aligner, method of manufacturing aligner and method of manufacturing micro-device
DE10123725A1 (en) 2001-05-15 2002-11-21 Zeiss Carl Objective for microlithographic projection, includes lens element with axis perpendicular to specified fluoride crystal plane
EP1390783A2 (en) 2001-05-15 2004-02-25 Carl Zeiss Lens system consisting of fluoride crystal lenses
DE10124566A1 (en) * 2001-05-15 2002-11-21 Zeiss Carl Optical imaging system with polarizing agents and quartz crystal plate therefor
DE10124474A1 (en) 2001-05-19 2002-11-21 Zeiss Carl Microlithographic exposure involves compensating path difference by controlled variation of first and/or second optical paths; image plane difference is essentially independent of incident angle
US7053988B2 (en) 2001-05-22 2006-05-30 Carl Zeiss Smt Ag. Optically polarizing retardation arrangement, and microlithography projection exposure machine
TW544758B (en) * 2001-05-23 2003-08-01 Nikon Corp Lighting optical device, exposure system, and production method of micro device
JP2002353105A (en) 2001-05-24 2002-12-06 Nikon Corp Illumination optical apparatus, aligner provided with the same and method of manufacturing microdevice
JP2002359176A (en) 2001-05-31 2002-12-13 Canon Inc Luminaire, illumination control method, aligner, device and manufacturing method thereof
JP4622160B2 (en) 2001-05-31 2011-02-02 旭硝子株式会社 Diffraction grating integrated optical rotator and optical head device
JP2002359174A (en) 2001-05-31 2002-12-13 Mitsubishi Electric Corp Exposure process managing system, method therefor and program for managing exposure process
JP4689081B2 (en) 2001-06-06 2011-05-25 キヤノン株式会社 Exposure apparatus, adjustment method, and device manufacturing method
JP3734432B2 (en) 2001-06-07 2006-01-11 三星電子株式会社 Mask transfer device, mask transfer system, and mask transfer method
JPWO2002101804A1 (en) 2001-06-11 2004-09-30 株式会社ニコン Exposure apparatus, device manufacturing method, and temperature stabilized flow path apparatus
JP2002367523A (en) 2001-06-12 2002-12-20 Matsushita Electric Ind Co Ltd Plasma display panel and method of manufacturing the same
WO2002103766A1 (en) 2001-06-13 2002-12-27 Nikon Corporation Scanning exposure method and scanning exposure system, and device production method
JP2002373849A (en) 2001-06-15 2002-12-26 Canon Inc Aligner
US6788385B2 (en) 2001-06-21 2004-09-07 Nikon Corporation Stage device, exposure apparatus and method
JP4829429B2 (en) * 2001-06-27 2011-12-07 キヤノン株式会社 Transmittance measuring device
WO2003003429A1 (en) 2001-06-28 2003-01-09 Nikon Corporation Projection optical system, exposure system and method
US6831731B2 (en) 2001-06-28 2004-12-14 Nikon Corporation Projection optical system and an exposure apparatus with the projection optical system
JP2003015314A (en) 2001-07-02 2003-01-17 Nikon Corp Illumination optical device and exposure device provided with the same
JP2003015040A (en) 2001-07-04 2003-01-15 Nikon Corp Projection optical system and exposure device equipped therewith
JP2003017003A (en) 2001-07-04 2003-01-17 Canon Inc Lamp and light source device
JP3507459B2 (en) 2001-07-09 2004-03-15 キヤノン株式会社 Illumination apparatus, exposure apparatus, and device manufacturing method
JP2003028673A (en) 2001-07-10 2003-01-29 Canon Inc Optical encoder, semiconductor manufacturing apparatus, device manufacturing method, semiconductor manufacturing plant and maintaining method for semiconductor manufacturing apparatus
EP1280007B1 (en) 2001-07-24 2008-06-18 ASML Netherlands B.V. Imaging apparatus
JP2003045712A (en) 2001-07-26 2003-02-14 Japan Aviation Electronics Industry Ltd Waterproof coil and manufacturing method therefor
JP4522024B2 (en) 2001-07-27 2010-08-11 キヤノン株式会社 Mercury lamp, illumination device and exposure device
JP2003043223A (en) 2001-07-30 2003-02-13 Nikon Corp Beam splitter and wave plate made of crystal material, and optical device, exposure device and inspection device equipped with the crystal optical parts
JP2003059799A (en) 2001-08-10 2003-02-28 Nikon Corp Illumination optical system, exposure system, and method of manufacturing microdevice
JP2003059803A (en) 2001-08-14 2003-02-28 Canon Inc Aligner
JP2003068600A (en) 2001-08-22 2003-03-07 Canon Inc Aligner and cooling method of substrate chuck
JP2003068607A (en) 2001-08-23 2003-03-07 Nikon Corp Aligner and exposure method
JP2003068604A (en) 2001-08-23 2003-03-07 Nikon Corp Illumination optical equipment and aligner using the illumination optical equipment
TW554411B (en) 2001-08-23 2003-09-21 Nikon Corp Exposure apparatus
KR100452928B1 (en) 2001-08-31 2004-10-14 안희석 Noodle of Potato and Method for manufacturing there of
JP2003075703A (en) 2001-08-31 2003-03-12 Konica Corp Optical unit and optical device
WO2003021352A1 (en) 2001-08-31 2003-03-13 Canon Kabushiki Kaisha Reticle and optical characteristic measuring method
JP4183166B2 (en) 2001-08-31 2008-11-19 京セラ株式会社 Positioning device components
JP2003081654A (en) 2001-09-06 2003-03-19 Toshiba Ceramics Co Ltd Synthetic quartz glass, and production method therefor
JPWO2003023832A1 (en) 2001-09-07 2004-12-24 株式会社ニコン Exposure method and apparatus, and device manufacturing method
JP2003084445A (en) 2001-09-13 2003-03-19 Canon Inc Scanning type exposure device and exposure method
JP2003090978A (en) * 2001-09-17 2003-03-28 Canon Inc Illumination device, exposure device and method for manufacturing device
JP4160286B2 (en) 2001-09-21 2008-10-01 東芝マイクロエレクトロニクス株式会社 LSI pattern dimension measurement location selection method
JP3910032B2 (en) 2001-09-25 2007-04-25 大日本スクリーン製造株式会社 Substrate developing device
JP2003114387A (en) 2001-10-04 2003-04-18 Nikon Corp Cata-dioptic system and projection exposure device equipped with the same system
JP4412450B2 (en) 2001-10-05 2010-02-10 信越化学工業株式会社 Anti-reflective filter
JP2003124095A (en) 2001-10-11 2003-04-25 Nikon Corp Projection exposure method, projection aligner, and device manufacturing method
JP2003130132A (en) 2001-10-22 2003-05-08 Nec Ameniplantex Ltd Vibration isolation mechanism
US6970232B2 (en) 2001-10-30 2005-11-29 Asml Netherlands B.V. Structures and methods for reducing aberration in integrated circuit fabrication systems
JP2003202523A (en) * 2001-11-02 2003-07-18 Nec Viewtechnology Ltd Polarization unit, polarization illumination device and projection type display device using the illumination device
US6577379B1 (en) 2001-11-05 2003-06-10 Micron Technology, Inc. Method and apparatus for shaping and/or orienting radiation irradiating a microlithographic substrate
JP4362999B2 (en) 2001-11-12 2009-11-11 株式会社ニコン Exposure apparatus, exposure method, and device manufacturing method
JP4307813B2 (en) 2001-11-14 2009-08-05 株式会社リコー Optical deflection method, optical deflection apparatus, method of manufacturing the optical deflection apparatus, optical information processing apparatus, image forming apparatus, image projection display apparatus, and optical transmission apparatus including the optical deflection apparatus
JP2003166856A (en) 2001-11-29 2003-06-13 Fuji Electric Co Ltd Optical encoder
JP2003161882A (en) 2001-11-29 2003-06-06 Nikon Corp Projection optical system, exposure apparatus and exposing method
JP3809095B2 (en) 2001-11-29 2006-08-16 ペンタックス株式会社 Light source system for exposure apparatus and exposure apparatus
JP3945569B2 (en) 2001-12-06 2007-07-18 東京応化工業株式会社 Development device
JP2003249443A (en) 2001-12-21 2003-09-05 Nikon Corp Stage apparatus, stage position-controlling method, exposure method and projection aligner, and device- manufacturing method
JP2003188087A (en) 2001-12-21 2003-07-04 Sony Corp Aligning method and aligner and method for manufacturing semiconductor device
TW200301848A (en) 2002-01-09 2003-07-16 Nikon Corp Exposure apparatus and exposure method
TW200302507A (en) 2002-01-21 2003-08-01 Nikon Corp Stage device and exposure device
JP3809381B2 (en) 2002-01-28 2006-08-16 キヤノン株式会社 Linear motor, stage apparatus, exposure apparatus, and device manufacturing method
JP2003229347A (en) 2002-01-31 2003-08-15 Canon Inc Semiconductor manufacturing device
JP2003233001A (en) 2002-02-07 2003-08-22 Canon Inc Reflection type projection optical system, exposure device, and method for manufacturing device
US20050134825A1 (en) 2002-02-08 2005-06-23 Carl Zeiss Smt Ag Polarization-optimized illumination system
DE10206061A1 (en) 2002-02-08 2003-09-04 Carl Zeiss Semiconductor Mfg S Polarization-optimized lighting system
JP2003240906A (en) 2002-02-20 2003-08-27 Dainippon Printing Co Ltd Antireflection body and method for manufacturing the same
JP2003257812A (en) 2002-02-27 2003-09-12 Nikon Corp Evaluating method for imaging optical system, adjusting method for the same, aligner, and alignment method
JP2003258071A (en) 2002-02-28 2003-09-12 Nikon Corp Substrate holding apparatus and aligner
AU2003211559A1 (en) 2002-03-01 2003-09-16 Nikon Corporation Projection optical system adjustment method, prediction method, evaluation method, adjustment method, exposure method, exposure device, program, and device manufacturing method
JP2003263119A (en) 2002-03-07 2003-09-19 Fuji Xerox Co Ltd Rib-attached electrode and its manufacturing method
JP3984841B2 (en) 2002-03-07 2007-10-03 キヤノン株式会社 Distortion measuring apparatus, distortion suppressing apparatus, exposure apparatus, and device manufacturing method
DE10210899A1 (en) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refractive projection lens for immersion lithography
JP3975787B2 (en) 2002-03-12 2007-09-12 ソニー株式会社 Solid-state image sensor
JP4100011B2 (en) 2002-03-13 2008-06-11 セイコーエプソン株式会社 Surface treatment apparatus, organic EL device manufacturing apparatus, and manufacturing method
US7085052B2 (en) 2002-03-14 2006-08-01 Optellios, Inc. Over-parameterized polarization controller
JP4335495B2 (en) 2002-03-27 2009-09-30 株式会社日立ハイテクノロジーズ Constant pressure chamber, irradiation apparatus using the same, and circuit pattern inspection apparatus
JP2003297727A (en) 2002-04-03 2003-10-17 Nikon Corp Illumination optical device, exposure apparatus, and method of exposure
JPWO2003085708A1 (en) 2002-04-09 2005-08-18 株式会社ニコン Exposure method, exposure apparatus, and device manufacturing method
WO2003085457A1 (en) 2002-04-10 2003-10-16 Fuji Photo Film Co., Ltd. Exposure head, exposure apparatus, and its application
DE10310690A1 (en) 2002-04-12 2003-10-30 Heidelberger Druckmasch Ag Sheet guide in sheet-processing machine especially rotary printer has pick-up pieces, free air jet nozzles and air cushion
EP1499560B1 (en) 2002-04-29 2005-12-14 Micronic Laser Systems Ab Device for protecting a chip and method for operating a chip
JP2004015187A (en) 2002-06-04 2004-01-15 Fuji Photo Film Co Ltd Photographing auxiliary system, digital camera, and server
JP4037179B2 (en) 2002-06-04 2008-01-23 東京エレクトロン株式会社 Cleaning method, cleaning device
JP2004014876A (en) 2002-06-07 2004-01-15 Nikon Corp Adjustment method, method for measuring spatial image, method for measuring image surface, and exposure device
JP2004022708A (en) 2002-06-14 2004-01-22 Nikon Corp Imaging optical system, illumination optical system, aligner and method for exposure
JP3448812B2 (en) 2002-06-14 2003-09-22 株式会社ニコン Mark detection apparatus, exposure apparatus having the same, and method of manufacturing semiconductor element or liquid crystal display element using the exposure apparatus
JP2004179172A (en) 2002-06-26 2004-06-24 Nikon Corp Aligner, exposure method, and method of manufacturing device
JP4012771B2 (en) 2002-06-28 2007-11-21 富士通エフ・アイ・ピー株式会社 License management method, license management system, license management program
JP2004039952A (en) 2002-07-05 2004-02-05 Tokyo Electron Ltd Plasma treatment apparatus and monitoring method thereof
JP2004040039A (en) 2002-07-08 2004-02-05 Sony Corp Selecting method of exposing method
JP2004045063A (en) 2002-07-09 2004-02-12 Topcon Corp Method of manufacturing optical rotary encoder plate and optical rotary encoder plate
JP2004051717A (en) 2002-07-17 2004-02-19 Mitsubishi Heavy Ind Ltd Biomass gasifier
WO2004012013A2 (en) 2002-07-26 2004-02-05 Massachusetts Institute Of Technology Optical imaging using a pupil filter and coordinated illumination polarisation
JP2004063847A (en) 2002-07-30 2004-02-26 Nikon Corp Aligner, exposure method, and stage device
JP2004063988A (en) 2002-07-31 2004-02-26 Canon Inc Illumination optical system, aligner having the system, and method of manufacturing device
JP2004071851A (en) 2002-08-07 2004-03-04 Canon Inc Semiconductor exposure method and aligner
JP2004085612A (en) 2002-08-22 2004-03-18 Matsushita Electric Ind Co Ltd Halftone phase shift mask, its manufacturing method and method for forming pattern using same
JP4095376B2 (en) 2002-08-28 2008-06-04 キヤノン株式会社 Exposure apparatus and method, and device manufacturing method
JP2004095653A (en) 2002-08-29 2004-03-25 Nikon Corp Aligner
JP2004145269A (en) 2002-08-30 2004-05-20 Nikon Corp Projection optical system, reflective and refractive projection optical system, scanning exposure apparatus and exposure method
JP2004103674A (en) 2002-09-06 2004-04-02 Renesas Technology Corp Method of manufacturing semiconductor integrated circuit device
JP2004101362A (en) 2002-09-10 2004-04-02 Canon Inc Stage position measurement and positioning device
JP2004098012A (en) 2002-09-12 2004-04-02 Seiko Epson Corp Thin film formation method, thin film formation device, optical device, organic electroluminescent device, semiconductor device, and electronic apparatus
JP2004104654A (en) 2002-09-12 2004-04-02 Ricoh Co Ltd Image reading apparatus
JP4269610B2 (en) 2002-09-17 2009-05-27 株式会社ニコン Exposure apparatus and method of manufacturing exposure apparatus
JP2004111579A (en) 2002-09-17 2004-04-08 Canon Inc Exposure method and system
KR100480620B1 (en) 2002-09-19 2005-03-31 삼성전자주식회사 Exposing equipment including a Micro Mirror Array and exposing method using the exposing equipment
JP2004119497A (en) 2002-09-24 2004-04-15 Huabang Electronic Co Ltd Semiconductor manufacturing equipment and method therefor
JP4333866B2 (en) 2002-09-26 2009-09-16 大日本スクリーン製造株式会社 Substrate processing method and substrate processing apparatus
JP2004128307A (en) 2002-10-04 2004-04-22 Nikon Corp Aligner and its adjustment method
JP2004134682A (en) 2002-10-15 2004-04-30 Nikon Corp Gas cylinder, stage apparatus, and aligner
US6665119B1 (en) 2002-10-15 2003-12-16 Eastman Kodak Company Wire grid polarizer
JP2004140145A (en) 2002-10-17 2004-05-13 Nikon Corp Aligner
JP2004146702A (en) 2002-10-25 2004-05-20 Nikon Corp Method for measuring optical characteristic, exposure method and method for manufacturing device
JP2004153096A (en) 2002-10-31 2004-05-27 Nikon Corp Aligner
JP2004153064A (en) 2002-10-31 2004-05-27 Nikon Corp Aligner
JP2004152705A (en) 2002-11-01 2004-05-27 Matsushita Electric Ind Co Ltd Manufacturing method of organic electroluminescent element
JP2004165249A (en) 2002-11-11 2004-06-10 Sony Corp Aligner and method of exposure
JP3953460B2 (en) 2002-11-12 2007-08-08 エーエスエムエル ネザーランズ ビー.ブイ. Lithographic projection apparatus
JP2004163555A (en) 2002-11-12 2004-06-10 Olympus Corp Vertical illumination microscope and objective for vertical illumination microscope
JP2004165416A (en) 2002-11-13 2004-06-10 Nikon Corp Aligner and building
JP2004172471A (en) 2002-11-21 2004-06-17 Nikon Corp Exposure method and apparatus
JP4378938B2 (en) 2002-11-25 2009-12-09 株式会社ニコン Exposure apparatus and device manufacturing method
US6844927B2 (en) 2002-11-27 2005-01-18 Kla-Tencor Technologies Corporation Apparatus and methods for removing optical abberations during an optical inspection
TWI281099B (en) 2002-12-02 2007-05-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP4314555B2 (en) 2002-12-03 2009-08-19 株式会社ニコン Linear motor device, stage device, and exposure device
JP4595320B2 (en) 2002-12-10 2010-12-08 株式会社ニコン Exposure apparatus and device manufacturing method
KR101036114B1 (en) 2002-12-10 2011-05-23 가부시키가이샤 니콘 Exposure apparatus, exposure method and method for manufacturing device
SG152063A1 (en) 2002-12-10 2009-05-29 Nikon Corp Exposure apparatus and method for producing device
WO2004053952A1 (en) 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
TW200421444A (en) 2002-12-10 2004-10-16 Nippon Kogaku Kk Optical device and projecting exposure apparatus using such optical device
JP4232449B2 (en) 2002-12-10 2009-03-04 株式会社ニコン Exposure method, exposure apparatus, and device manufacturing method
US20040108973A1 (en) 2002-12-10 2004-06-10 Kiser David K. Apparatus for generating a number of color light components
WO2004053951A1 (en) 2002-12-10 2004-06-24 Nikon Corporation Exposure method, exposure apparatus and method for manufacturing device
JP2004301825A (en) 2002-12-10 2004-10-28 Nikon Corp Surface position detection device, exposure method and method for manufacturing device
JP4352874B2 (en) 2002-12-10 2009-10-28 株式会社ニコン Exposure apparatus and device manufacturing method
DE10257766A1 (en) 2002-12-10 2004-07-15 Carl Zeiss Smt Ag Method for setting a desired optical property of a projection lens and microlithographic projection exposure system
KR20110086130A (en) 2002-12-10 2011-07-27 가부시키가이샤 니콘 Exposure system and device producing method
KR101157002B1 (en) 2002-12-10 2012-06-21 가부시키가이샤 니콘 Exposure apparatus and method for manufacturing device
AU2003289272A1 (en) 2002-12-10 2004-06-30 Nikon Corporation Surface position detection apparatus, exposure method, and device porducing method
SG150388A1 (en) 2002-12-10 2009-03-30 Nikon Corp Exposure apparatus and method for producing device
JP2004193425A (en) 2002-12-12 2004-07-08 Nikon Corp Movement control method, movement controller, aligner and device manufacturing method
JP2004198748A (en) 2002-12-19 2004-07-15 Nikon Corp Optical integrator, illumination optical system, exposure device, and exposure method
JP2004205698A (en) 2002-12-24 2004-07-22 Nikon Corp Projection optical system, exposure device and exposing method
JP2004221253A (en) 2003-01-14 2004-08-05 Nikon Corp Aligner
EP1583946B1 (en) 2003-01-15 2006-11-08 Micronic Laser Systems Ab A method to detect a defective pixel
JP2004224421A (en) 2003-01-27 2004-08-12 Tokyo Autom Mach Works Ltd Product feeding apparatus
JP2004228497A (en) 2003-01-27 2004-08-12 Nikon Corp Exposure device and manufacturing method of electronic device
JP2004241666A (en) 2003-02-07 2004-08-26 Nikon Corp Measuring method and exposure method
JP2004007417A (en) 2003-02-10 2004-01-08 Fujitsu Ltd Information providing system
JP4366948B2 (en) 2003-02-14 2009-11-18 株式会社ニコン Illumination optical apparatus, exposure apparatus, and exposure method
JP2004259828A (en) 2003-02-25 2004-09-16 Nikon Corp Semiconductor exposure system
JP2004259985A (en) 2003-02-26 2004-09-16 Sony Corp Resist pattern forming device, method for forming resist pattern and method for manufacturing semiconductor device using the forming method
JP4604452B2 (en) 2003-02-26 2011-01-05 株式会社ニコン Exposure apparatus, exposure method, and device manufacturing method
KR101562447B1 (en) 2003-02-26 2015-10-21 가부시키가이샤 니콘 Exposure apparatus and method, and method of producing apparatus
JP4305003B2 (en) 2003-02-27 2009-07-29 株式会社ニコン EUV optical system and EUV exposure apparatus
US7206059B2 (en) 2003-02-27 2007-04-17 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
JP2004260115A (en) 2003-02-27 2004-09-16 Nikon Corp Stage unit, exposure system, and method for manufacturing device
US6943941B2 (en) 2003-02-27 2005-09-13 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
JP2004260081A (en) 2003-02-27 2004-09-16 Nikon Corp Reflector for ultraviolet region and projection aligner employing it
KR101181688B1 (en) 2003-03-25 2012-09-19 가부시키가이샤 니콘 Exposure system and device production method
JP2004294202A (en) 2003-03-26 2004-10-21 Seiko Epson Corp Defect detection method and device of screen
JP4265257B2 (en) 2003-03-28 2009-05-20 株式会社ニコン Exposure apparatus, exposure method, and film structure
JP4496711B2 (en) 2003-03-31 2010-07-07 株式会社ニコン Exposure apparatus and exposure method
JP2004304135A (en) 2003-04-01 2004-10-28 Nikon Corp Exposure device, exposing method and manufacturing method of micro-device
JP4341277B2 (en) 2003-04-07 2009-10-07 株式会社ニコン Method of forming quartz glass
JP4465974B2 (en) 2003-04-07 2010-05-26 株式会社ニコン Quartz glass molding equipment
JP4288413B2 (en) 2003-04-07 2009-07-01 株式会社ニコン Quartz glass molding method and molding apparatus
DE602004020200D1 (en) 2003-04-07 2009-05-07 Nippon Kogaku Kk EXPOSURE DEVICE AND METHOD FOR PRODUCING A DEVICE
JP4281397B2 (en) 2003-04-07 2009-06-17 株式会社ニコン Quartz glass molding equipment
WO2004091079A1 (en) 2003-04-07 2004-10-21 Kabushiki Kaisha Yaskawa Denki Canned linear motor armature and canned linear motor
JP4374964B2 (en) 2003-09-26 2009-12-02 株式会社ニコン Quartz glass molding method and molding apparatus
JP4428115B2 (en) 2003-04-11 2010-03-10 株式会社ニコン Immersion lithography system
JP2004319724A (en) 2003-04-16 2004-11-11 Ses Co Ltd Structure of washing tub in semiconductor washing apparatus
JPWO2004094940A1 (en) 2003-04-23 2006-07-13 株式会社ニコン Interferometer system, signal processing method in interferometer system, and stage using the signal processing method
US7095546B2 (en) 2003-04-24 2006-08-22 Metconnex Canada Inc. Micro-electro-mechanical-system two dimensional mirror with articulated suspension structures for high fill factor arrays
JP2006524349A (en) 2003-04-24 2006-10-26 メトコネックス カナダ インコーポレイティッド Microelectromechanical system two-dimensional mirror with articulated suspension structure for high fill factor arrays
JP2004327660A (en) 2003-04-24 2004-11-18 Nikon Corp Scanning projection aligner, exposure method, and device manufacturing method
JP2004335808A (en) 2003-05-08 2004-11-25 Sony Corp Pattern transfer device, pattern transfer method and program
JP4487168B2 (en) 2003-05-09 2010-06-23 株式会社ニコン Stage apparatus, driving method thereof, and exposure apparatus
JP2004335864A (en) 2003-05-09 2004-11-25 Nikon Corp Aligner and exposure method
JP2004342987A (en) 2003-05-19 2004-12-02 Canon Inc Stage apparatus
TW200507055A (en) 2003-05-21 2005-02-16 Nikon Corp Polarized cancellation element, illumination device, exposure device, and exposure method
TW201415536A (en) 2003-05-23 2014-04-16 尼康股份有限公司 Exposure method, exposure device, and device manufacturing method
TWI503865B (en) 2003-05-23 2015-10-11 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
JP2005012190A (en) 2003-05-23 2005-01-13 Nikon Corp Estimation method and adjusting method of imaging optical system, exposure apparatus and method
JP2004349645A (en) 2003-05-26 2004-12-09 Sony Corp Liquid-immersed differential liquid-drainage static-pressure floating pad, master-disk exposure apparatus, and method of exposure using liquid-immersed differential liquid-drainage
KR20060009956A (en) 2003-05-28 2006-02-01 가부시키가이샤 니콘 Exposure method, exposure device, and device manufacturing method
JP2004356410A (en) 2003-05-29 2004-12-16 Nikon Corp Aligner and method for exposure
DE10324477A1 (en) 2003-05-30 2004-12-30 Carl Zeiss Smt Ag Microlithographic projection exposure system
JPWO2004109780A1 (en) 2003-06-04 2006-07-20 株式会社ニコン STAGE APPARATUS, FIXING METHOD, EXPOSURE APPARATUS, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD
JP2005005295A (en) 2003-06-09 2005-01-06 Nikon Corp Stage apparatus and exposure device
JP2005005395A (en) 2003-06-10 2005-01-06 Nikon Corp Gas feeding evacuation method and apparatus, mirror cylinder, exposure device, and method
JP2005005521A (en) 2003-06-12 2005-01-06 Nikon Corp Device and method for exposing, and polarization state measurement device
JP2005011990A (en) 2003-06-19 2005-01-13 Nikon Corp Scanning projection aligner, and illuminance calibrating method and aligning method thereof
EP2216685B1 (en) 2003-06-19 2012-06-27 Nikon Corporation Exposure apparatus and device manufacturing method
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP2005019628A (en) 2003-06-25 2005-01-20 Nikon Corp Optical apparatus, aligner, manufacturing method of device
JP3862678B2 (en) 2003-06-27 2006-12-27 キヤノン株式会社 Exposure apparatus and device manufacturing method
DE10328938A1 (en) 2003-06-27 2005-01-20 Carl Zeiss Smt Ag Correction device for compensation of disturbances of the polarization distribution and projection objective for microlithography
JP2005024890A (en) 2003-07-02 2005-01-27 Renesas Technology Corp Polarizer, projection lens system, aligner, and exposure method
JP2005026634A (en) 2003-07-04 2005-01-27 Sony Corp Aligner and manufacturing method of semiconductor device
EP2264531B1 (en) 2003-07-09 2013-01-16 Nikon Corporation Exposure apparatus and device manufacturing method
KR101296501B1 (en) 2003-07-09 2013-08-13 가부시키가이샤 니콘 Exposure apparatus and method for manufacturing device
WO2005008754A1 (en) 2003-07-18 2005-01-27 Nikon Corporation Flare measurement method, exposure method, and flare measurement mask
EP1662553A1 (en) 2003-07-24 2006-05-31 Nikon Corporation Illuminating optical system, exposure system and exposure method
JP4492600B2 (en) 2003-07-28 2010-06-30 株式会社ニコン Exposure apparatus, exposure method, and device manufacturing method
JP4492239B2 (en) 2003-07-28 2010-06-30 株式会社ニコン Exposure apparatus, device manufacturing method, and exposure apparatus control method
JP2005050718A (en) 2003-07-30 2005-02-24 Furukawa Electric Co Ltd:The Terminal connecting tool for flat cable
JP2005051147A (en) 2003-07-31 2005-02-24 Nikon Corp Exposure method and exposure device
JP2005055811A (en) 2003-08-07 2005-03-03 Olympus Corp Optical member, optical apparatus having the optical member incorporated therein, and method of assembling the optical apparatus
JP2005064210A (en) 2003-08-12 2005-03-10 Nikon Corp Method for exposure, and method of manufacturing electronic device and exposure device utilizing the method
JP4262031B2 (en) 2003-08-19 2009-05-13 キヤノン株式会社 Exposure apparatus and device manufacturing method
KR101345020B1 (en) 2003-08-29 2013-12-26 가부시키가이샤 니콘 Liquid recovery apparatus exposure apparatus exposure method and device production method
TWI245163B (en) 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP4305095B2 (en) 2003-08-29 2009-07-29 株式会社ニコン Immersion projection exposure apparatus equipped with an optical component cleaning mechanism and immersion optical component cleaning method
TWI263859B (en) 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP4218475B2 (en) 2003-09-11 2009-02-04 株式会社ニコン Extreme ultraviolet optical system and exposure apparatus
JP2005091023A (en) 2003-09-12 2005-04-07 Minolta Co Ltd Optical encoder and imaging device equipped therewith
WO2005026843A2 (en) 2003-09-12 2005-03-24 Carl Zeiss Smt Ag Illumination system for a microlithography projection exposure installation
DE10343333A1 (en) 2003-09-12 2005-04-14 Carl Zeiss Smt Ag Illumination system for microlithography projection exposure system, has mirror arrangement with array of individual mirrors that is controlled individually by changing angular distribution of light incident on mirror arrangement
JP4444920B2 (en) 2003-09-19 2010-03-31 株式会社ニコン Exposure apparatus and device manufacturing method
JP2005093324A (en) 2003-09-19 2005-04-07 Toshiba Corp Glass substrate used for image display device, manufacturing method and apparatus therefor
JP2005093948A (en) 2003-09-19 2005-04-07 Nikon Corp Aligner and its adjustment method, exposure method, and device manufacturing method
JP2005123586A (en) 2003-09-25 2005-05-12 Matsushita Electric Ind Co Ltd Apparatus and method for projection
ATE396428T1 (en) * 2003-09-26 2008-06-15 Zeiss Carl Smt Ag EXPOSURE PROCESS AND PROJECTION EXPOSURE SYSTEM FOR CARRYING OUT THE PROCESS
JP4385702B2 (en) 2003-09-29 2009-12-16 株式会社ニコン Exposure apparatus and exposure method
JP2005108925A (en) 2003-09-29 2005-04-21 Nikon Corp Lighting optical device, exposure apparatus and exposure method
JP4513299B2 (en) 2003-10-02 2010-07-28 株式会社ニコン Exposure apparatus, exposure method, and device manufacturing method
JP4470433B2 (en) 2003-10-02 2010-06-02 株式会社ニコン Exposure apparatus, exposure method, and device manufacturing method
JP2005114882A (en) 2003-10-06 2005-04-28 Hitachi High-Tech Electronics Engineering Co Ltd Method for placing substrate on process stage, substrate exposure stage, and substrate exposure apparatus
EP1672682A4 (en) 2003-10-08 2008-10-15 Zao Nikon Co Ltd Substrate transporting apparatus and method, exposure apparatus and method, and device producing method
JP2005136364A (en) 2003-10-08 2005-05-26 Zao Nikon Co Ltd Substrate carrying device, exposure device and device manufacturing method
JP2005116831A (en) 2003-10-08 2005-04-28 Nikon Corp Projection aligner, exposure method, and device manufacturing method
WO2005036619A1 (en) 2003-10-09 2005-04-21 Nikon Corporation Illumination optical device, and exposure device and method
WO2005036620A1 (en) 2003-10-10 2005-04-21 Nikon Corporation Exposure method, exposure device, and device manufacturing method
EP1524558A1 (en) 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005127460A (en) 2003-10-27 2005-05-19 Mitsubishi Heavy Ind Ltd Base isolation and quake removing floor system
KR101121260B1 (en) 2003-10-28 2012-03-23 가부시키가이샤 니콘 Exposure apparatus, exposure method, and device producing method
JP2005140999A (en) 2003-11-06 2005-06-02 Nikon Corp Optical system, adjustment method of optical system, exposure device and exposure method
JP4631707B2 (en) 2003-11-13 2011-02-16 株式会社ニコン Illumination device, an exposure device, manufacturing method for an exposure method and device
JPWO2005048325A1 (en) 2003-11-17 2007-11-29 株式会社ニコン Stage driving method, stage apparatus, and exposure apparatus
JP4976094B2 (en) 2003-11-20 2012-07-18 株式会社ニコン Illumination optical apparatus, exposure apparatus, exposure method, and microdevice manufacturing method
JP4470095B2 (en) 2003-11-20 2010-06-02 株式会社ニコン Illumination optical apparatus, exposure apparatus, and exposure method
JP4552428B2 (en) 2003-12-02 2010-09-29 株式会社ニコン Illumination optical apparatus, projection exposure apparatus, exposure method, and device manufacturing method
US6970233B2 (en) 2003-12-03 2005-11-29 Texas Instruments Incorporated System and method for custom-polarized photolithography illumination
JP2005175177A (en) 2003-12-11 2005-06-30 Nikon Corp Optical apparatus and aligner
JP2005175176A (en) 2003-12-11 2005-06-30 Nikon Corp Exposure method and method for manufacturing device
KR101119813B1 (en) 2003-12-15 2012-03-06 가부시키가이샤 니콘 Stage system, exposure apparatus and exposure method
JP3102327U (en) 2003-12-17 2004-07-02 国統国際股▲ふん▼有限公司 Flexible tube leakage prevention mechanism
JP4954444B2 (en) 2003-12-26 2012-06-13 株式会社ニコン Channel forming member, exposure apparatus, and device manufacturing method
DE602004027162D1 (en) 2004-01-05 2010-06-24 Nippon Kogaku Kk EXPOSURE DEVICE, EXPOSURE METHOD AND COMPONENT MANUFACTURING METHOD
JP4586367B2 (en) 2004-01-14 2010-11-24 株式会社ニコン Stage apparatus and exposure apparatus
US8270077B2 (en) 2004-01-16 2012-09-18 Carl Zeiss Smt Gmbh Polarization-modulating optical element
EP1709636A2 (en) 2004-01-16 2006-10-11 Koninklijke Philips Electronics N.V. Optical system
JP2005209705A (en) 2004-01-20 2005-08-04 Nikon Corp Exposure device and manufacturing method for device
JP4474927B2 (en) 2004-01-20 2010-06-09 株式会社ニコン Exposure method, exposure apparatus, and device manufacturing method
JP4319189B2 (en) 2004-01-26 2009-08-26 株式会社ニコン Exposure apparatus and device manufacturing method
US7580559B2 (en) 2004-01-29 2009-08-25 Asml Holding N.V. System and method for calibrating a spatial light modulator
JP4506674B2 (en) 2004-02-03 2010-07-21 株式会社ニコン Exposure apparatus and device manufacturing method
US7557900B2 (en) 2004-02-10 2009-07-07 Nikon Corporation Exposure apparatus, device manufacturing method, maintenance method, and exposure method
JP4370992B2 (en) 2004-02-18 2009-11-25 株式会社ニコン Optical element and exposure apparatus
WO2005081291A1 (en) 2004-02-19 2005-09-01 Nikon Corporation Exposure apparatus and method of producing device
WO2005081292A1 (en) 2004-02-20 2005-09-01 Nikon Corporation Exposure apparatus, supply method and recovery method, exposure method, and device producing method
JP2005234359A (en) 2004-02-20 2005-09-02 Ricoh Co Ltd Optical characteristic measuring apparatus of scanning optical system, method of calibrating optical characteristic measuring apparatus of scanning optical system, scanning optical system and image forming apparatus
JP4693088B2 (en) 2004-02-20 2011-06-01 株式会社ニコン Illumination optical apparatus, exposure apparatus, and exposure method
JP4333404B2 (en) 2004-02-25 2009-09-16 株式会社ニコン Conveying apparatus, conveying method, exposure apparatus, exposure method, and device manufacturing method
JP2005243904A (en) 2004-02-26 2005-09-08 Nikon Corp Illumination optical apparatus, aligner, and exposure method
DE102004010569A1 (en) 2004-02-26 2005-09-15 Carl Zeiss Smt Ag Illumination system for a microlithography projection exposure apparatus
US6977718B1 (en) 2004-03-02 2005-12-20 Advanced Micro Devices, Inc. Lithography method and system with adjustable reflector
JP2005251549A (en) 2004-03-04 2005-09-15 Nikon Corp Microswitch and driving method for microswitch
JP2005259789A (en) 2004-03-09 2005-09-22 Nikon Corp Detection system, aligner and manufacturing method of device
JP2005257740A (en) 2004-03-09 2005-09-22 Nikon Corp Projection optical system, exposing device, and exposure method
JP4778685B2 (en) 2004-03-10 2011-09-21 株式会社日立ハイテクノロジーズ Pattern shape evaluation method and apparatus for semiconductor device
JP4497968B2 (en) 2004-03-18 2010-07-07 キヤノン株式会社 Illumination apparatus, exposure apparatus, and device manufacturing method
JP2005268700A (en) 2004-03-22 2005-09-29 Nikon Corp Staging device and aligner
JP2005276932A (en) 2004-03-23 2005-10-06 Nikon Corp Aligner and device-manufacturing method
JP2005302826A (en) 2004-04-07 2005-10-27 Nikon Corp Lighting optical device, exposure system and method
JP4474979B2 (en) 2004-04-15 2010-06-09 株式会社ニコン Stage apparatus and exposure apparatus
KR101330370B1 (en) 2004-04-19 2013-11-15 가부시키가이샤 니콘 Exposure apparatus and device producing method
JP2005311020A (en) 2004-04-21 2005-11-04 Nikon Corp Exposure method and method of manufacturing device
JP4776891B2 (en) * 2004-04-23 2011-09-21 キヤノン株式会社 Illumination optical system, exposure apparatus, and device manufacturing method
JP4569157B2 (en) 2004-04-27 2010-10-27 株式会社ニコン Reflective projection optical system and exposure apparatus provided with the reflective projection optical system
US7324280B2 (en) 2004-05-25 2008-01-29 Asml Holding N.V. Apparatus for providing a pattern of polarization
JP2005340605A (en) 2004-05-28 2005-12-08 Nikon Corp Aligner and its adjusting method
JP5159027B2 (en) 2004-06-04 2013-03-06 キヤノン株式会社 Illumination optical system and exposure apparatus
JP2006005197A (en) 2004-06-18 2006-01-05 Canon Inc Aligner
JP4419701B2 (en) 2004-06-21 2010-02-24 株式会社ニコン Quartz glass molding equipment
JP2006017895A (en) 2004-06-30 2006-01-19 Integrated Solutions:Kk Aligner
JP4444743B2 (en) 2004-07-07 2010-03-31 キヤノン株式会社 Exposure apparatus and device manufacturing method
JP2006024819A (en) 2004-07-09 2006-01-26 Renesas Technology Corp Immersion exposure apparatus and manufacturing method for electronic device
US7283209B2 (en) 2004-07-09 2007-10-16 Carl Zeiss Smt Ag Illumination system for microlithography
EP1788694A4 (en) 2004-07-15 2014-07-02 Nikon Corp Planar motor equipment, stage equipment, exposure equipment and device manufacturing method
JP2006032750A (en) 2004-07-20 2006-02-02 Canon Inc Immersed projection aligner and device manufacturing method
JP4411158B2 (en) 2004-07-29 2010-02-10 キヤノン株式会社 Exposure equipment
EP1621930A3 (en) * 2004-07-29 2011-07-06 Carl Zeiss SMT GmbH Illumination system for a microlithographic projection exposure apparatus
JP2006049758A (en) 2004-08-09 2006-02-16 Nikon Corp Control method of exposure device, and method and device for exposure using the same
JP2006054364A (en) 2004-08-13 2006-02-23 Nikon Corp Substrate-chucking device and exposure device
JP4983257B2 (en) 2004-08-18 2012-07-25 株式会社ニコン Exposure apparatus, device manufacturing method, measuring member, and measuring method
JP2006073584A (en) 2004-08-31 2006-03-16 Nikon Corp Exposure apparatus and exposure method, and device manufacturing method
JP4779973B2 (en) 2004-09-01 2011-09-28 株式会社ニコン Substrate holder, stage apparatus, and exposure apparatus
US7433046B2 (en) 2004-09-03 2008-10-07 Carl Ziess Meditec, Inc. Patterned spinning disk based optical phase shifter for spectral domain optical coherence tomography
JP4772306B2 (en) 2004-09-06 2011-09-14 株式会社東芝 Immersion optical device and cleaning method
JP2006080281A (en) 2004-09-09 2006-03-23 Nikon Corp Stage device, gas bearing device, exposure device, and device manufacturing method
KR20070048722A (en) 2004-09-10 2007-05-09 가부시키가이샤 니콘 Stage apparatus and exposure apparatus
EP1804278A4 (en) 2004-09-14 2011-03-02 Nikon Corp Correction method and exposure device
JP2006086141A (en) 2004-09-14 2006-03-30 Nikon Corp Projection optical system, aligner, and method of exposure
CN101015039B (en) 2004-09-17 2010-09-01 尼康股份有限公司 Substrate for exposure, exposure method and device manufacturing method
JP2006086442A (en) 2004-09-17 2006-03-30 Nikon Corp Stage device and exposure device
JP4804358B2 (en) 2004-09-27 2011-11-02 浜松ホトニクス株式会社 Spatial light modulation device, optical processing device, and method of using coupling prism
JP2006100363A (en) 2004-09-28 2006-04-13 Canon Inc Aligner, exposure method, and device manufacturing method
JP4747545B2 (en) 2004-09-30 2011-08-17 株式会社ニコン Stage apparatus, exposure apparatus, and device manufacturing method
JP4335114B2 (en) 2004-10-18 2009-09-30 日本碍子株式会社 Micromirror device
GB2419208A (en) 2004-10-18 2006-04-19 Qinetiq Ltd Optical correlation employing an optical bit delay
JP2006120985A (en) 2004-10-25 2006-05-11 Nikon Corp Illumination optical device, and exposure apparatus and method
JP2006128192A (en) 2004-10-26 2006-05-18 Nikon Corp Holding apparatus, barrel, exposure apparatus, and device manufacturing method
US8330939B2 (en) 2004-11-01 2012-12-11 Nikon Corporation Immersion exposure apparatus and device manufacturing method with a liquid recovery port provided on at least one of a first stage and second stage
JP4517354B2 (en) 2004-11-08 2010-08-04 株式会社ニコン Exposure apparatus and device manufacturing method
WO2006051909A1 (en) 2004-11-11 2006-05-18 Nikon Corporation Exposure method, device manufacturing method, and substrate
JP2006140366A (en) 2004-11-15 2006-06-01 Nikon Corp Projection optical system and exposure device
EP3428724A1 (en) 2004-12-15 2019-01-16 Nikon Corporation Exposure apparatus and device fabricating method
JP2005150759A (en) 2004-12-15 2005-06-09 Nikon Corp Scanning exposure device
JP2006170811A (en) 2004-12-16 2006-06-29 Nikon Corp Multilayer film reflecting mirror, euv exposure device, and soft x-ray optical apparatus
JP2006170899A (en) 2004-12-17 2006-06-29 Sendai Nikon:Kk Photoelectric encoder
EP1830456A1 (en) 2004-12-24 2007-09-05 Nikon Corporation Magnetic guiding apparatus, stage apparatus, exposure apparatus and device manufacturing method
JP2006177865A (en) 2004-12-24 2006-07-06 Ntn Corp Magnetic encoder and bearing for wheel equipped with it
US20060138349A1 (en) 2004-12-27 2006-06-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4402582B2 (en) 2004-12-27 2010-01-20 大日本印刷株式会社 Case for large photomask and case changer
JP4632793B2 (en) 2005-01-12 2011-02-16 京セラ株式会社 Portable terminal with navigation function
US8053937B2 (en) 2005-01-21 2011-11-08 Nikon Corporation Linear motor, stage apparatus and exposure apparatus
JP4858439B2 (en) 2005-01-25 2012-01-18 株式会社ニコン Exposure apparatus, exposure method, and microdevice manufacturing method
WO2006085524A1 (en) 2005-02-14 2006-08-17 Nikon Corporation Exposure equipment
JP4650619B2 (en) 2005-03-09 2011-03-16 株式会社ニコン Drive unit, optical unit, optical apparatus, and exposure apparatus
JP2006253572A (en) 2005-03-14 2006-09-21 Nikon Corp Stage apparatus, exposure apparatus, and device manufacturing method
JP2006269462A (en) * 2005-03-22 2006-10-05 Sony Corp Exposure apparatus and illuminating apparatus
JP5125503B2 (en) 2005-03-23 2013-01-23 コニカミノルタホールディングス株式会社 Manufacturing method of organic EL element
JP4858744B2 (en) 2005-03-24 2012-01-18 株式会社ニコン Exposure equipment
JP4561425B2 (en) 2005-03-24 2010-10-13 ソニー株式会社 Hologram recording / reproducing apparatus and hologram recording / reproducing method
JP2006278820A (en) 2005-03-30 2006-10-12 Nikon Corp Exposure method and exposure device
JP4546315B2 (en) 2005-04-07 2010-09-15 株式会社神戸製鋼所 Manufacturing method of mold for microfabrication
WO2006118108A1 (en) 2005-04-27 2006-11-09 Nikon Corporation Exposure method, exposure apparatus, method for manufacturing device, and film evaluation method
JP4676815B2 (en) 2005-05-26 2011-04-27 ルネサスエレクトロニクス株式会社 Exposure apparatus and exposure method
JP2006351586A (en) 2005-06-13 2006-12-28 Nikon Corp Lighting device, projection aligner, and method of manufacturing microdevice
JP4710427B2 (en) 2005-06-15 2011-06-29 株式会社ニコン Optical element holding apparatus, lens barrel, exposure apparatus, and device manufacturing method
DE102005030839A1 (en) 2005-07-01 2007-01-11 Carl Zeiss Smt Ag Projection exposure system with a plurality of projection lenses
JP5309565B2 (en) 2005-08-05 2013-10-09 株式会社ニコン Stage apparatus, exposure apparatus, method, exposure method, and device manufacturing method
JP2007048819A (en) 2005-08-08 2007-02-22 Nikon Corp Surface position detector, aligner and process for fabricating microdevice
JP2007043980A (en) 2005-08-11 2007-02-22 Sanei Gen Ffi Inc Quality improver for japanese/western baked confectionery
JP2007087306A (en) 2005-09-26 2007-04-05 Yokohama National Univ Target image designating and generating system
JP2007093546A (en) 2005-09-30 2007-04-12 Nikon Corp Encoder system, stage device, and exposure apparatus
JP4640090B2 (en) 2005-10-04 2011-03-02 ウシオ電機株式会社 Discharge lamp holder and discharge lamp holding mechanism
JP2007113939A (en) 2005-10-18 2007-05-10 Nikon Corp Measuring device and method therefor, stage device, and exposure device and method therefor
JP2007120334A (en) 2005-10-25 2007-05-17 Denso Corp Abnormality diagnostic device of vehicle driving system
JP2007120333A (en) 2005-10-25 2007-05-17 Mitsubishi Heavy Ind Ltd Injection pipe of combustor for rocket and combustor for rocket
JP4809037B2 (en) 2005-10-27 2011-11-02 日本カニゼン株式会社 Black plating film, method for forming the same, and article having plating film
WO2007055237A1 (en) 2005-11-09 2007-05-18 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
US20090115989A1 (en) 2005-11-10 2009-05-07 Hirohisa Tanaka Lighting optical system, exposure system, and exposure method
KR20080068013A (en) 2005-11-14 2008-07-22 가부시키가이샤 니콘 Liquid recovery member, exposure apparatus, exposure method, and device production method
JP2007142313A (en) 2005-11-22 2007-06-07 Nikon Corp Measuring instrument and adjusting method
JP2007144864A (en) 2005-11-29 2007-06-14 Sanyo Electric Co Ltd Laminated structure and refrigeration unit using the same
TW200725195A (en) 2005-12-06 2007-07-01 Nikon Corp Exposure method, exposure apparatus, and unit manufacturing method
EP3327759A1 (en) 2005-12-08 2018-05-30 Nikon Corporation Substrate holding apparatus, exposure apparatus, exposing method, and device fabricating method
JP4800901B2 (en) 2005-12-12 2011-10-26 矢崎総業株式会社 Voltage detection device and insulation interface
US20070166134A1 (en) 2005-12-20 2007-07-19 Motoko Suzuki Substrate transfer method, substrate transfer apparatus and exposure apparatus
JP2007170938A (en) 2005-12-21 2007-07-05 Sendai Nikon:Kk Encoder
JP2007207821A (en) 2006-01-31 2007-08-16 Nikon Corp Variable slit device, lighting device, aligner, exposure method, and method of manufacturing device
JP2007220767A (en) 2006-02-15 2007-08-30 Canon Inc Exposure apparatus and method of manufacturing device
JP2007227637A (en) 2006-02-23 2007-09-06 Canon Inc Immersion aligner
US20090002830A1 (en) 2006-02-27 2009-01-01 Nikon Corporation Dichroic Filter
JP2007234110A (en) 2006-02-28 2007-09-13 Toshiba Corp Optical information recording apparatus and control method of optical information recording apparatus
JP4929762B2 (en) 2006-03-03 2012-05-09 株式会社ニコン Exposure apparatus, exposure method, and device manufacturing method
DE102006015213A1 (en) 2006-03-30 2007-10-11 Carl Zeiss Smt Ag Polarization influencing optical arrangement for e.g. projection lens system, has optical unit changing distribution in central area of beam cross section, where beam has approximate tangential polarization distribution in central area
JP2007280623A (en) 2006-04-03 2007-10-25 Seiko Epson Corp Heat treatment device, thin-film forming device, and heat treatment method
JP2007295702A (en) 2006-04-24 2007-11-08 Toshiba Mach Co Ltd Linear motor, and stage drive device
JPWO2007132862A1 (en) 2006-05-16 2009-09-24 株式会社ニコン Projection optical system, exposure method, exposure apparatus, and device manufacturing method
JP4893112B2 (en) 2006-06-03 2012-03-07 株式会社ニコン High frequency circuit components
JP4873138B2 (en) 2006-06-21 2012-02-08 富士ゼロックス株式会社 Information processing apparatus and program
JP2008058580A (en) 2006-08-31 2008-03-13 Canon Inc Image forming apparatus, monitoring device, control method and program
JP2008064924A (en) 2006-09-06 2008-03-21 Seiko Epson Corp Fixing device and image forming apparatus
EP2068349A4 (en) 2006-09-29 2011-03-30 Nikon Corp Stage device and exposure device
JP2007051300A (en) 2006-10-10 2007-03-01 Teijin Chem Ltd Flame-retardant resin composition
JP4924879B2 (en) 2006-11-14 2012-04-25 株式会社ニコン Encoder
WO2008061681A2 (en) 2006-11-21 2008-05-29 Carl Zeiss Smt Ag Illumination lens system for projection microlithography, and measuring and monitoring method for such an illumination lens system
TWI452437B (en) 2006-11-27 2014-09-11 尼康股份有限公司 An exposure method, a pattern forming method, and an exposure apparatus, and an element manufacturing method
JP2007274881A (en) 2006-12-01 2007-10-18 Nikon Corp Moving object apparatus, fine-motion object, and exposure apparatus
JPWO2008075742A1 (en) 2006-12-20 2010-04-15 株式会社ニコン Maintenance method, exposure method, exposure apparatus, and device manufacturing method
JP4910679B2 (en) 2006-12-21 2012-04-04 株式会社ニコン Variable capacitor, variable capacitor device, high frequency circuit filter and high frequency circuit
DE102007027985A1 (en) 2006-12-21 2008-06-26 Carl Zeiss Smt Ag Optical system, in particular illumination device or projection objective of a microlithographic projection exposure apparatus
WO2008078668A1 (en) 2006-12-26 2008-07-03 Miura Co., Ltd. Method of feeding makeup water for boiler water supply
JP5146323B2 (en) 2006-12-27 2013-02-20 株式会社ニコン Stage apparatus, exposure apparatus, and device manufacturing method
MY155009A (en) 2006-12-27 2015-08-28 Sanofi Aventis Cycloalkylamine substituted isoquinolone derivatives
WO2008090975A1 (en) 2007-01-26 2008-07-31 Nikon Corporation Support structure and exposure apparatus
CN101681092B (en) 2007-05-09 2012-07-25 株式会社尼康 Photomask substrate, photomask substrate forming member, photomask substrate manufacturing method, photomask, and exposure method using photomask
BRPI0812782B1 (en) 2007-05-31 2019-01-22 Panasonic Corp image capture apparatus, additional information provision apparatus and method for use in an additional information provision apparatus
JP5194650B2 (en) 2007-08-31 2013-05-08 株式会社ニコン Electronic camera
JP4499774B2 (en) 2007-10-24 2010-07-07 株式会社半導体エネルギー研究所 Insulated gate type semiconductor device
JPWO2009153925A1 (en) 2008-06-17 2011-11-24 株式会社ニコン Nanoimprint method and apparatus
KR101504388B1 (en) 2008-06-26 2015-03-19 가부시키가이샤 니콘 Method and apparatus for manufacturing display element
KR20110028473A (en) 2008-06-30 2011-03-18 가부시키가이샤 니콘 Method and apparatus for manufacturing display element, method and apparatus for manufacturing thin film transistor, and circuit forming apparatus
US20110037962A1 (en) 2009-08-17 2011-02-17 Nikon Corporation Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method
US20110205519A1 (en) 2010-02-25 2011-08-25 Nikon Corporation Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method

Patent Citations (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5627626A (en) * 1902-01-20 1997-05-06 Kabushiki Kaisha Toshiba Projectin exposure apparatus
US3892470A (en) * 1974-02-01 1975-07-01 Hughes Aircraft Co Optical device for transforming monochromatic linearly polarized light to ring polarized light
US4755027A (en) * 1985-07-02 1988-07-05 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V. Method and device for polarizing light radiation
US4744615A (en) * 1986-01-29 1988-05-17 International Business Machines Corporation Laser beam homogenizer
US6211944B1 (en) * 1990-08-21 2001-04-03 Nikon Corporation Projection exposure method and apparatus
US6233041B1 (en) * 1990-08-21 2001-05-15 Nikon Corporation Exposure method utilizing diffracted light having different orders of diffraction
US20030043356A1 (en) * 1990-11-15 2003-03-06 Nikon Corporation Projection exposure apparatus and method
US6710855B2 (en) * 1990-11-15 2004-03-23 Nikon Corporation Projection exposure apparatus and method
US5541026A (en) * 1991-06-13 1996-07-30 Nikon Corporation Exposure apparatus and photo mask
US5621498A (en) * 1991-10-15 1997-04-15 Kabushiki Kaisha Toshiba Projection exposure apparatus
US5707501A (en) * 1991-10-15 1998-01-13 Kabushiki Kaisha Toshiba Filter manufacturing apparatus
US5312513A (en) * 1992-04-03 1994-05-17 Texas Instruments Incorporated Methods of forming multiple phase light modulators
US6404482B1 (en) * 1992-10-01 2002-06-11 Nikon Corporation Projection exposure method and apparatus
US6229647B1 (en) * 1992-12-14 2001-05-08 Canon Kabushiki Kaisha Reflection and refraction optical system and projection exposure apparatus using the same
US5739898A (en) * 1993-02-03 1998-04-14 Nikon Corporation Exposure method and apparatus
US5933219A (en) * 1994-04-22 1999-08-03 Canon Kabushiki Kaisha Projection exposure apparatus and device manufacturing method capable of controlling polarization direction
US5631721A (en) * 1995-05-24 1997-05-20 Svg Lithography Systems, Inc. Hybrid illumination system for use in photolithography
US6191880B1 (en) * 1995-09-23 2001-02-20 Carl-Zeiss-Stiftung Radial polarization-rotating optical arrangement and microlithographic projection exposure system incorporating said arrangement
US6392800B2 (en) * 1995-09-23 2002-05-21 Carl-Zeiss-Stiftung Radial polarization-rotating optical arrangement and microlithographic projection exposure system incorporating said arrangement
US6341007B1 (en) * 1996-11-28 2002-01-22 Nikon Corporation Exposure apparatus and method
US6400441B1 (en) * 1996-11-28 2002-06-04 Nikon Corporation Projection exposure apparatus and method
US6590634B1 (en) * 1996-11-28 2003-07-08 Nikon Corporation Exposure apparatus and method
US6549269B1 (en) * 1996-11-28 2003-04-15 Nikon Corporation Exposure apparatus and an exposure method
US6259512B1 (en) * 1997-08-04 2001-07-10 Canon Kabushiki Kaisha Illumination system and exposure apparatus having the same
US6208407B1 (en) * 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
US6252712B1 (en) * 1998-02-20 2001-06-26 Carl-Zeiss-Stiftung Optical system with polarization compensator
US6597430B1 (en) * 1998-05-18 2003-07-22 Nikon Corporation Exposure method, illuminating device, and exposure system
US6535273B1 (en) * 1998-07-02 2003-03-18 Carl-Zeiss-Stiftung Microlithographic illumination system with depolarizer
US6031658A (en) * 1998-09-25 2000-02-29 University Of Central Florida Digital control polarization based optical scanner
US20020085176A1 (en) * 1999-01-06 2002-07-04 Nikon Corporation Projection optical system, production method thereof, and projection exposure apparatus using it
US6583931B2 (en) * 1999-01-06 2003-06-24 Nikon Corporation Projection optical system, production method thereof, and projection exposure apparatus using it
US6361909B1 (en) * 1999-12-06 2002-03-26 Industrial Technology Research Institute Illumination aperture filter design using superposition
US6674514B2 (en) * 2000-03-16 2004-01-06 Canon Kabushiki Kaisha Illumination optical system in exposure apparatus
US7239446B2 (en) * 2000-04-25 2007-07-03 Asml Holding N.V. Optical reduction system with control of illumination polarization
US20020027719A1 (en) * 2000-04-25 2002-03-07 Silicon Valley Group, Inc. Optical reduction system with control of illumination polarization
US6680798B2 (en) * 2000-04-25 2004-01-20 Asml Holding N.V. Optical reduction system with control of illumination polarization
US20040120044A1 (en) * 2000-04-25 2004-06-24 Asml Holding N.V. Optical reduction system with control of illumination polarization
US6538247B2 (en) * 2000-08-24 2003-03-25 Pentax Corporation Method of detecting arrangement of beam spots
US20020024008A1 (en) * 2000-08-24 2002-02-28 Asahi Kogaku Kogyo Kabushiki Kaisha Method of detecting arrangement of beam spots
US6870668B2 (en) * 2000-10-10 2005-03-22 Nikon Corporation Method for evaluating image formation performance
US20020085276A1 (en) * 2000-11-29 2002-07-04 Nikon Corporation Illumination optical apparatus and exposure apparatus provided with illumination optical apparatus
US6885493B2 (en) * 2001-02-05 2005-04-26 Micronic Lasersystems Ab Method and a device for reducing hysteresis or imprinting in a movable micro-element
US6856379B2 (en) * 2001-05-22 2005-02-15 Carl Zeiss Smt Ag Polarizer and microlithography projection system with a polarizer
US20030038225A1 (en) * 2001-06-01 2003-02-27 Mulder Heine Melle Lithographic apparatus, device manufacturing method, device manufactured thereby, control system, computer program, and computer program product
US20030007158A1 (en) * 2001-07-06 2003-01-09 Hill Henry A. Method and apparatus to reduce effects of sheared wavefronts on interferometric phase measurements
US20030053036A1 (en) * 2001-07-10 2003-03-20 Nikon Corporation Production method of projection optical system
US6900915B2 (en) * 2001-11-14 2005-05-31 Ricoh Company, Ltd. Light deflecting method and apparatus efficiently using a floating mirror
US20050094268A1 (en) * 2002-03-14 2005-05-05 Carl Zeiss Smt Ag Optical system with birefringent optical elements
US6999157B2 (en) * 2002-04-23 2006-02-14 Canon Kabushiki Kaisha Illumination optical system and method, and exposure apparatus
US20040004771A1 (en) * 2002-04-26 2004-01-08 Nikon Corporation Projection optical system, exposure system provided with the projection optical system, and exposure method using the projection optical system
US20050095749A1 (en) * 2002-04-29 2005-05-05 Mathias Krellmann Device for protecting a chip and method for operating a chip
US6913373B2 (en) * 2002-05-27 2005-07-05 Nikon Corporation Optical illumination device, exposure device and exposure method
US7038763B2 (en) * 2002-05-31 2006-05-02 Asml Netherlands B.V. Kit of parts for assembling an optical element, method of assembling an optical element, optical element, lithographic apparatus, and device manufacturing method
US20040012764A1 (en) * 2002-05-31 2004-01-22 Mulder Heine Melle Kit of parts for assembling an optical element, method of assembling an optical element, optical element, lithographic apparatus, and device manufacturing method
US20040104654A1 (en) * 2002-08-31 2004-06-03 Samsung Electronics Co., Ltd. Cabinet for recessed refrigerators
US20040057036A1 (en) * 2002-09-19 2004-03-25 Miyoko Kawashima Exposure method
US20060055834A1 (en) * 2002-12-03 2006-03-16 Nikon Corporation Illumination optical system, exposure apparatus, and exposure method
US20040119954A1 (en) * 2002-12-10 2004-06-24 Miyoko Kawashima Exposure apparatus and method
US6891655B2 (en) * 2003-01-02 2005-05-10 Micronic Laser Systems Ab High energy, low energy density, radiation-resistant optics used with micro-electromechanical devices
US20060072095A1 (en) * 2003-04-09 2006-04-06 Nikon Corporation Exposure method and apparatus, and method for fabricating device
US20090185156A1 (en) * 2003-04-09 2009-07-23 Nikon Corporation Exposure method and apparatus, and method for fabricating device with light amount distribution having light larger in first and second pairs of areas
US20080024747A1 (en) * 2003-04-09 2008-01-31 Nikon Corporation Exposure method and apparatus, and method for fabricating device
US20080068572A1 (en) * 2003-04-09 2008-03-20 Nikon Corporation Exposure method and apparatus, and method for fabricating device
US6842223B2 (en) * 2003-04-11 2005-01-11 Nikon Precision Inc. Enhanced illuminator for use in photolithographic systems
US20060146384A1 (en) * 2003-05-13 2006-07-06 Carl Zeiss Smt Ag Optical beam transformation system and illumination system comprising an optical beam transformation system
US20060012769A1 (en) * 2003-09-12 2006-01-19 Canon Kabushiki Kaisha Illumination optical system and exposure apparatus using the same
US20050146704A1 (en) * 2003-09-26 2005-07-07 Carl Zeiss Smt Ag Microlithographic exposure method as well as a projection exposure system for carrying out the method
US20090122292A1 (en) * 2003-10-28 2009-05-14 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
US20060158624A1 (en) * 2003-11-20 2006-07-20 Nikon Corporation Beam transforming element, illumination optical apparatus, exposure apparatus, and exposure method
US20090147233A1 (en) * 2003-11-20 2009-06-11 Nikon Corporation Beam transforming element, illumination optical apparatus, exposure apparatus, and exposure method with two optical elements having different thicknesses
US20090147234A1 (en) * 2003-11-20 2009-06-11 Nikon Corporation Beam transforming element, illumination optical apparatus, exposure apparatus, and exposure method with two optical elements having different thicknesses
US20070081114A1 (en) * 2004-01-16 2007-04-12 Damian Fiolka Polarization-modulating optical element
US20090002675A1 (en) * 2004-01-16 2009-01-01 Carl Zeiss Smt Ag Polarization-modulating optical element
US20070019179A1 (en) * 2004-01-16 2007-01-25 Damian Fiolka Polarization-modulating optical element
US20100142051A1 (en) * 2004-01-27 2010-06-10 Nikon Corporation Optical system, exposure system, and exposure method
US20100141921A1 (en) * 2004-01-27 2010-06-10 Nikon Corporation Optical system, exposure system, and exposure method
US20100141926A1 (en) * 2004-01-27 2010-06-10 Nikon Corporation Optical system,exposure system, and exposure method
US20090073414A1 (en) * 2004-02-06 2009-03-19 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US20090073441A1 (en) * 2004-02-06 2009-03-19 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US20080030707A1 (en) * 2004-08-17 2008-02-07 Nikon Corporation Lighting Optical Device, Regulation Method for Lighting Optical Device, Exposure System, and Exposure Method
US7245355B2 (en) * 2004-10-12 2007-07-17 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method
US20060077370A1 (en) * 2004-10-12 2006-04-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method
US7245353B2 (en) * 2004-10-12 2007-07-17 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method
US20060092398A1 (en) * 2004-11-02 2006-05-04 Asml Holding N.V. Method and apparatus for variable polarization control in a lithography system
US20060132748A1 (en) * 2004-12-20 2006-06-22 Kazuya Fukuhara Exposure system, exposure method and method for manufacturing a semiconductor device
US20060139611A1 (en) * 2004-12-28 2006-06-29 Asml Netherlands B.V. Polarized radiation in lithographic apparatus and device manufacturing method
US7345740B2 (en) * 2004-12-28 2008-03-18 Asml Netherlands B.V. Polarized radiation in lithographic apparatus and device manufacturing method
US20070146676A1 (en) * 2005-01-21 2007-06-28 Nikon Corporation Method of adjusting lighting optical device, lighting optical device, exposure system, and exposure method
US20060164711A1 (en) * 2005-01-24 2006-07-27 Asml Holding N.V. System and method utilizing an electrooptic modulator
US20070008511A1 (en) * 2005-07-11 2007-01-11 Asml Netherlands B.V. Polarized radiation in lithographic apparatus and device manufacturing method
US20070058151A1 (en) * 2005-09-13 2007-03-15 Asml Netherlands B.V. Optical element for use in lithography apparatus and method of conditioning radiation beam
US20080030706A1 (en) * 2006-08-01 2008-02-07 Fujitsu Limited Illumination optical system, exposure method and designing method
US20090073411A1 (en) * 2007-09-14 2009-03-19 Nikon Corporation Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method
US20090091730A1 (en) * 2007-10-03 2009-04-09 Nikon Corporation Spatial light modulation unit, illumination apparatus, exposure apparatus, and device manufacturing method
US20090128886A1 (en) * 2007-10-12 2009-05-21 Nikon Corporation Illumination optical apparatus, exposure apparatus, and device manufacturing method
US20090097007A1 (en) * 2007-10-16 2009-04-16 Hirohisa Tanaka Illumination optical system, exposure apparatus, and device manufacturing method
US20090109417A1 (en) * 2007-10-24 2009-04-30 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US20090185154A1 (en) * 2007-10-31 2009-07-23 Nikon Corporation Optical unit, illumination optical apparatus, exposure appartus, exposure method, and device manufacturing method
US20090116093A1 (en) * 2007-11-06 2009-05-07 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method

Cited By (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9678437B2 (en) 2003-04-09 2017-06-13 Nikon Corporation Illumination optical apparatus having distribution changing member to change light amount and polarization member to set polarization in circumference direction
US9146474B2 (en) 2003-04-09 2015-09-29 Nikon Corporation Exposure method and apparatus, and method for fabricating device with light amount distribution having light larger and different linear polarization states in an on-axis area and a plurality of off-axis areas
US9164393B2 (en) 2003-04-09 2015-10-20 Nikon Corporation Exposure method and apparatus, and method for fabricating device with light amount distribution having light larger in four areas
US9885959B2 (en) 2003-04-09 2018-02-06 Nikon Corporation Illumination optical apparatus having deflecting member, lens, polarization member to set polarization in circumference direction, and optical integrator
US8675177B2 (en) 2003-04-09 2014-03-18 Nikon Corporation Exposure method and apparatus, and method for fabricating device with light amount distribution having light larger in first and second pairs of areas
US9760014B2 (en) 2003-10-28 2017-09-12 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
US9423698B2 (en) 2003-10-28 2016-08-23 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
US9423697B2 (en) 2003-10-28 2016-08-23 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
US9244359B2 (en) 2003-10-28 2016-01-26 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
US9146476B2 (en) 2003-10-28 2015-09-29 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
US9140993B2 (en) 2003-10-28 2015-09-22 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
US9140992B2 (en) 2003-10-28 2015-09-22 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
US20090147234A1 (en) * 2003-11-20 2009-06-11 Nikon Corporation Beam transforming element, illumination optical apparatus, exposure apparatus, and exposure method with two optical elements having different thicknesses
US9885872B2 (en) 2003-11-20 2018-02-06 Nikon Corporation Illumination optical apparatus, exposure apparatus, and exposure method with optical integrator and polarization member that changes polarization state of light
US9164209B2 (en) 2003-11-20 2015-10-20 Nikon Corporation Illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power having different thicknesses to rotate linear polarization direction
US10281632B2 (en) 2003-11-20 2019-05-07 Nikon Corporation Illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power to rotate linear polarization direction
US8711479B2 (en) 2004-01-16 2014-04-29 Carl Zeiss Smt Gmbh Illumination apparatus for microlithography projection system including polarization-modulating optical element
US8279524B2 (en) 2004-01-16 2012-10-02 Carl Zeiss Smt Gmbh Polarization-modulating optical element
US9581911B2 (en) 2004-01-16 2017-02-28 Carl Zeiss Smt Gmbh Polarization-modulating optical element
US9316772B2 (en) 2004-01-16 2016-04-19 Carl Zeiss Smt Gmbh Producing polarization-modulating optical element for microlithography system
US20100177293A1 (en) * 2004-01-16 2010-07-15 Carl Zeiss Smt Ag Polarization-modulating optical element
US8482717B2 (en) 2004-01-16 2013-07-09 Carl Zeiss Smt Gmbh Polarization-modulating optical element
US20070081114A1 (en) * 2004-01-16 2007-04-12 Damian Fiolka Polarization-modulating optical element
US8289623B2 (en) 2004-01-16 2012-10-16 Carl Zeiss Smt Gmbh Polarization-modulating optical element
US20060291057A1 (en) * 2004-01-16 2006-12-28 Damian Fiolka Polarization-modulating optical element
US8861084B2 (en) 2004-01-16 2014-10-14 Carl Zeiss Smt Ag Polarization-modulating optical element
US20080316598A1 (en) * 2004-01-16 2008-12-25 Carl Zeiss Smt Ag Polarization-modulating optical element
US8320043B2 (en) 2004-01-16 2012-11-27 Carl Zeiss Smt Gmbh Illumination apparatus for microlithographyprojection system including polarization-modulating optical element
US8270077B2 (en) 2004-01-16 2012-09-18 Carl Zeiss Smt Gmbh Polarization-modulating optical element
US8259393B2 (en) 2004-01-16 2012-09-04 Carl Zeiss Smt Gmbh Polarization-modulating optical element
US20080316459A1 (en) * 2004-01-16 2008-12-25 Carl Zeiss Smt Ag Polarization-modulating optical element
US20090002675A1 (en) * 2004-01-16 2009-01-01 Carl Zeiss Smt Ag Polarization-modulating optical element
US20100045957A1 (en) * 2004-01-16 2010-02-25 Carl Zeiss Smt Ag Polarization-modulating optical element
US8436983B2 (en) 2004-01-27 2013-05-07 Nikon Corporation Optical system, exposure system, and exposure method
US8351021B2 (en) 2004-01-27 2013-01-08 Nikon Corporation Optical system, exposure system, and exposure method
US20100141926A1 (en) * 2004-01-27 2010-06-10 Nikon Corporation Optical system,exposure system, and exposure method
US20100142051A1 (en) * 2004-01-27 2010-06-10 Nikon Corporation Optical system, exposure system, and exposure method
US8339578B2 (en) 2004-01-27 2012-12-25 Nikon Corporation Optical system, exposure system, and exposure method
US9429848B2 (en) 2004-02-06 2016-08-30 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US9423694B2 (en) 2004-02-06 2016-08-23 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US9140990B2 (en) 2004-02-06 2015-09-22 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US10007194B2 (en) 2004-02-06 2018-06-26 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US10234770B2 (en) 2004-02-06 2019-03-19 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US10241417B2 (en) 2004-02-06 2019-03-26 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US20130271945A1 (en) 2004-02-06 2013-10-17 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US7916391B2 (en) 2004-05-25 2011-03-29 Carl Zeiss Smt Gmbh Apparatus for providing a pattern of polarization
US20110037962A1 (en) * 2009-08-17 2011-02-17 Nikon Corporation Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method
US20110205519A1 (en) * 2010-02-25 2011-08-25 Nikon Corporation Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method

Also Published As

Publication number Publication date
US20170351100A1 (en) 2017-12-07
TW200519410A (en) 2005-06-16
EP3118890A3 (en) 2017-02-15
JP2014003306A (en) 2014-01-09
KR20060128892A (en) 2006-12-14
JP4976015B2 (en) 2012-07-18
KR20140029543A (en) 2014-03-10
EP3118890A2 (en) 2017-01-18
HK1140832A1 (en) 2010-10-22
US20060158624A1 (en) 2006-07-20
EP2117034B1 (en) 2016-05-04
US20090147234A1 (en) 2009-06-11
EP1926129B1 (en) 2012-01-04
TWI612338B (en) 2018-01-21
HK1140833A1 (en) 2010-10-22
KR20150103759A (en) 2015-09-11
EP2251896B1 (en) 2015-09-23
US9164209B2 (en) 2015-10-20
HK1094093A1 (en) 2007-03-16
KR101220616B1 (en) 2013-01-21
HK1128096A1 (en) 2009-10-16
US10281632B2 (en) 2019-05-07
EP2251896A1 (en) 2010-11-17
EP1693885A4 (en) 2007-06-27
US20110273698A1 (en) 2011-11-10
JP2014195094A (en) 2014-10-09
CN1883029A (en) 2006-12-20
HK1140831A1 (en) 2010-10-22
JP2011233911A (en) 2011-11-17
TWI519819B (en) 2016-02-01
JP6160666B2 (en) 2017-07-12
US20110273692A1 (en) 2011-11-10
JPWO2005050718A1 (en) 2007-12-06
US20150338663A1 (en) 2015-11-26
KR101578226B1 (en) 2015-12-16
EP2117034A1 (en) 2009-11-11
KR101578310B1 (en) 2015-12-16
CN101369056B (en) 2011-01-12
KR101220667B1 (en) 2013-01-21
CN101685265B (en) 2015-10-14
CN101369054B (en) 2011-05-18
US9885872B2 (en) 2018-02-06
JP5696746B2 (en) 2015-04-08
CN101685267A (en) 2010-03-31
TWI385414B (en) 2013-02-11
JP2016026306A (en) 2016-02-12
KR20170120724A (en) 2017-10-31
ATE540424T1 (en) 2012-01-15
WO2005050718A1 (en) 2005-06-02
JP5731591B2 (en) 2015-06-10
US20110273693A1 (en) 2011-11-10
JP2014003305A (en) 2014-01-09
US20130242394A1 (en) 2013-09-19
HK1096197A1 (en) 2007-05-25
HK1128048A1 (en) 2009-10-16
TW201610473A (en) 2016-03-16
CN101685267B (en) 2015-01-14
CN101685264A (en) 2010-03-31
US20110299055A1 (en) 2011-12-08
KR20100029254A (en) 2010-03-16
CN101685265A (en) 2010-03-31
EP1926129A1 (en) 2008-05-28
JP5967132B2 (en) 2016-08-10
US20090147233A1 (en) 2009-06-11
CN101685266A (en) 2010-03-31
JP2016212434A (en) 2016-12-15
KR20150015011A (en) 2015-02-09
CN101369054A (en) 2009-02-18
CN101685204A (en) 2010-03-31
JP5983689B2 (en) 2016-09-06
CN101685264B (en) 2014-03-12
CN100555566C (en) 2009-10-28
JP2019032558A (en) 2019-02-28
KR20100029136A (en) 2010-03-15
TW201234051A (en) 2012-08-16
TW201305604A (en) 2013-02-01
EP1693885B1 (en) 2016-05-04
CN101685266B (en) 2014-12-10
EP1693885A1 (en) 2006-08-23
KR20100005131A (en) 2010-01-13
HK1140830A1 (en) 2010-10-22
JP2015008304A (en) 2015-01-15
JP2017227906A (en) 2017-12-28
KR101220636B1 (en) 2013-01-18
TWI512335B (en) 2015-12-11
TW201809801A (en) 2018-03-16
US20090323041A1 (en) 2009-12-31
JP2010226117A (en) 2010-10-07
KR101737682B1 (en) 2017-05-18
CN101369056A (en) 2009-02-18
JP6493325B2 (en) 2019-04-03

Similar Documents

Publication Publication Date Title
US20170351100A1 (en) Beam transforming optical system, illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power having different thickness to rotate linear polarization direction
US20180341185A1 (en) Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method

Legal Events

Date Code Title Description
STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION