JP2000058436A - Projection aligner and exposure method - Google Patents

Projection aligner and exposure method

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Publication number
JP2000058436A
JP2000058436A JP10239562A JP23956298A JP2000058436A JP 2000058436 A JP2000058436 A JP 2000058436A JP 10239562 A JP10239562 A JP 10239562A JP 23956298 A JP23956298 A JP 23956298A JP 2000058436 A JP2000058436 A JP 2000058436A
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Japan
Prior art keywords
optical system
surface
projection
lens
projection optical
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Pending
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JP10239562A
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Japanese (ja)
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Yohei Fujishima
Koichi Matsumoto
宏一 松本
洋平 藤島
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Nikon Corp
株式会社ニコン
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Priority to JP10239562A priority Critical patent/JP2000058436A/en
Publication of JP2000058436A publication Critical patent/JP2000058436A/en
Application status is Pending legal-status Critical

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Exposure apparatus for microlithography
    • G03F7/70216—Systems for imaging mask onto workpiece
    • G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lens
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Exposure apparatus for microlithography
    • G03F7/70216—Systems for imaging mask onto workpiece
    • G03F7/70341—Immersion

Abstract

PROBLEM TO BE SOLVED: To provide a projection aligner and method for reducing the change of image forming performance at an image forming position and in the neighborhood of an optical axis in a projection optical system, even when this projection optical system is used in an immersion state compared with the case that the projection optical system is used in a normal state.
SOLUTION: This projection aligner is provided with a projection optical system 2 for transferring a pattern 1a plotted on an original art 1 to a photosensitive face 5a of a substrate 5. An auxiliary lens 4 is arranged so as to be inserted into and pulled out of a space between the lens face at the substrate 5 side of the projection optical system 2 and the photosensitive face 5a, and a space between the lower face of the auxiliary lens 4 and the photosensitive face 5a is formed to be immersion possible. Also, a curvature radius R1 of the lens face at the original art 1 side of the auxiliary lens 4 is formed, so as to be almost equal to a distance d1 on an optical axis Z from the lens face at the original art 1 side to the photosensitive face 5a.
COPYRIGHT: (C)2000,JPO

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【０００１】 [0001]

【発明の属する技術分野】本発明は、原版上に描画されたパターンを基板上に焼付転写する投影光学系を有する投影露光装置及び露光方法に関する。 The present invention relates to relates to a projection exposure apparatus and an exposure method having a projection optical system for baking transferring the pattern drawn on the original plate onto the substrate.

【０００２】 [0002]

【従来の技術】近年、感光性基板としてのウエハに転写されるパターンの微細化が望まれている。 In recent years, miniaturization of a pattern to be transferred onto the wafer as a photosensitive substrate is desired. これを達成するためには、露光波長の短波長化を図るか、投影光学系の開口数の増大化を図るかの２つの方法が考えられる。 To accomplish this, either achieve shorter exposure wavelength, two ways or reduce the numerical aperture of the increase in the projection optical system can be considered.
従来より、これらのうち投影光学系の開口数の増大化を図る方法として、液浸式の投影露光装置が提案されている。 Conventionally, as a method to reduce the numerical aperture of an increase of of these projection optical systems, an immersion type projection exposure apparatus has been proposed. 液浸式の投影露光装置は、投影光学系の最もウエハ側のレンズ面と、ウエハとの空間、すなわち、作動距離（ワーキングディスタンス）の空間（以後、作動空間と呼ぶ。）の全部又はウエハ側の部分空間を、油等の液体で満たす装置である。 Immersion projection exposure apparatus, and most of the wafer-side lens surface of the projection optical system, the space between the wafer, i.e., the space (hereinafter referred to as the working space.) All or wafer side of the working distance (working distance) the subspace, a device filled with a liquid such as oil. 通常使用時の作動空間を占める空気の屈折率が１．０であるのに対して、例えば、油の屈折率は約１．６である。 With respect to the refractive index of the air occupying the working space during normal use from 1.0, for example, the refractive index of the oil is approximately 1.6. このため、作動空間の全部又はウエハ側の部分空間を、このように屈折率の高い液体に置換すれば、投影光学系のウエハ側の開口数を大きくし、露光パターンの微細化を図ることができる。 Thus, all or a wafer side of the subspace of the working space, if substituted to such a high refractive index liquid, and increase the numerical aperture on the wafer side of the projection optical system, is possible to achieve miniaturization of the exposure pattern it can.

【０００３】 [0003]

【発明が解決しようとする課題】上記従来の液浸式の投影露光装置においては、作動空間を空気等の気体とする通常使用時と、パターンの微細化を図り作動空間の全部又はウエハ側の部分空間を液体とする液浸使用時とで、 In [0006] the projection exposure apparatus of a conventional immersion type is a normal use of a gas such as air to the working space, the working space aims to finer patterns of all or wafer side subspace by the time immersion use a liquid,
同等の結像性能を確保できなかった。 It was not able to secure the equivalent of imaging performance. 例えば、作動空間のウエハ側部分空間を液体とする液浸時の使用方法として、平行平板ガラスを気体と液体の境界に設置する場合を考える。 For example, the wafer-side partial space of the working space as a method used at the time of immersion of the liquid, consider the case of installing a parallel plate glass to the boundary between the gas and the liquid. このような場合、以下の３つの不具合が発生する。 In such a case, the following three problems occur.

【０００４】１つめは、液浸使用時、平行平板ガラスの入射面での光の屈折によって、投影光学系による結像位置がずれる不具合である。 [0004] The first is when the immersion use, the refraction of light at the incident surface of the parallel plate glass, it is trouble shifted imaging position of the projection optical system. そのため、焦点距離を確保するように、投影光学系又はウエハを移動させる必要がある。 Therefore, to ensure the focal length, it is necessary to move the projection optical system or the wafer. そして、その液浸使用時の条件によっては、結像位置をウエハ上に合わせられなくなる場合がある。 Then, depending on the conditions at the time of immersion used, it may keyed not the image forming position on the wafer. ２つめは、液浸使用時に気体と液体の境界に設置される平行平板ガラスによって、球面収差が生じる不具合である。 Second, the parallel plate glass to be installed at the boundary of the gas and liquid at the immersion use, a problem that spherical aberration occurs. これによって、液浸使用時には結像性能が悪くなる。 As a result, imaging performance is poor at the time of immersion use. ３つめは、環境変動により液浸使用時の結像性能や結像位置の変化が大きくなる不具合である。 Third, a problem that a change in imaging performance and image formation position during immersion use increases due to environmental fluctuations. すなわち、液体の屈折率は、気体の屈折率に比べて、温度変化等の環境変動によって大きく変化するため、結像性能や結像位置が安定しない。 That is, the refractive index of the liquid, as compared to the refractive index of the gas, to vary greatly depending on environmental changes such as temperature changes, is not stable imaging performance and image formation position. したがって本発明は、投影光学系を液浸状態で使用した場合でも、通常状態で使用した場合と比べて、投影光学系による結像位置と、光軸付近の結像性能の変化の少ない投影露光装置及び露光方法を提供することを課題とする。 Accordingly, the present invention, even when using a projection optical system in an immersion state, as compared with the case of using a normal state, the imaging position of the projection optical system, a small projection exposure of a change in imaging performance in the vicinity of the optical axis and to provide an apparatus and an exposure method.

【０００５】 [0005]

【課題を解決するための手段】本発明は上記課題を解決するためになされたものであり、すなわち、添付図面の図１及び図２に付した符号をカッコ内に付記すると、本発明は、原版（１）上に描画されたパターン（１ａ）を基板（５）の感光面（５ａ）に転写する投影光学系（２）を有する投影露光装置において、投影光学系（２）の最も基板（５）側のレンズ面と感光面（５ａ） The present invention SUMMARY OF THE INVENTION has been made to solve the above problems, i.e., when the reference numerals affixed to Figures 1 and 2 of the accompanying drawings appended in parentheses, the present invention is, most substrates of the original in a projection exposure apparatus having a photosensitive surface of the substrate has been pattern (1a) drawn in (1) above (5) a projection optical system for transferring the (5a) (2), the projection optical system (2) ( 5) lens surface side and the photosensitive surface (5a)
との空間に、補助レンズ（４）が挿脱可能に配置され、 The space between the auxiliary lens (4) is arranged removably,
補助レンズ（４）の下面と感光面（５ａ）との空間は、 Space between the lower surface and the photosensitive surface of the auxiliary lens (4) (5a) is
液浸可能に形成され、補助レンズ（４）の原版（１）側レンズ面の曲率半径（Ｒ 1 ）は、原版（１）側レンズ面から感光面（５ａ）までの光軸（Ｚ）上の距離（ｄ 1 ） Immersion capable formed, the radius of curvature of the original (1) side lens surface of the auxiliary lens (4) (R 1) is an original (1) the optical axis from the lens surface to the photosensitive surface (5a) (Z) above the distance (d 1)
にほぼ等しくなるように形成されたことを特徴とする投影露光装置である。 A projection exposure apparatus characterized in that it is formed to be substantially equal to. その際、更に添付図面の図３に付した符号をカッコ内に付記すると、補助レンズ（４）の基板（５）側レンズ面の曲率半径（Ｒ 2 ）は、基板（５） At that time, further when the reference numerals used in FIG. 3 of the accompanying drawings appended in parentheses, the radius of curvature of the substrate (5) side lens surface of the auxiliary lens (4) (R 2), the substrate (5)
側レンズ面から感光面（５ａ）までの光軸（Ｚ）上の距離（ｄ 2 ）にほぼ等しくなるように形成されることが好ましい。 It is formed to be approximately equal from the side the lens surface on the photosensitive surface (5a) to the optical axis (Z) distance on the (d 2) is preferred.

【０００６】また本発明は、添付図面の図１及び図４に付した符号をカッコ内に付記すると、原版（１）上に描画されたパターン（１ａ）を基板（５）の感光面（５ [0006] The present invention, when the reference numerals affixed to FIGS. 1 and 4 of the accompanying drawings appended in parentheses, the photosensitive surface of the original (1) the pattern (1a) which has been written on the substrate (5) (5
ａ）に転写する投影光学系（２）を有する投影露光装置において、投影光学系（２）の最も基板（５）側のレンズ面の曲率半径（Ｒ 2 ）は、基板（５）側のレンズ面から感光面（５ａ）までの光軸（Ｚ）上の距離（ｄ 2 ）にほぼ等しくなるように形成されたことを特徴とする投影露光装置である。 In a projection exposure apparatus having a projection optical system for transferring the a) (2), most board (5) curvature of the lens surface of the side radius of the projection optical system (2) (R 2), the substrate (5) side of the lens a projection exposure apparatus characterized in that it is formed to be substantially equal to the distance (d 2) on the optical axis (Z) from the surface to the photosensitive surface (5a). また本発明は、添付図面の図１に付した符号をカッコ内に付記すると、上述の構成の投影露光装置を用いて露光する方法において、原版（１）を所定の露光光で照明する照明工程と、投影光学系（２）を介して原版（１）のパターン像（１ａ）を基板（５）の感光面（５ａ）に露光する露光工程とを含むことを特徴とする露光方法である。 The present invention, by appending the reference numerals affixed to Figure 1 of the accompanying drawings in parentheses, in the method of exposure using the projection exposure apparatus of the above-described configuration, the illumination step of illuminating an original (1) at a predetermined exposure light When, an exposure method, which comprises an exposure step of the pattern image of an original (1) through a projection optical system (2) to (1a) to expose the photosensitive surface of the substrate (5) (5a).

【０００７】 [0007]

【発明の実施の形態】本発明の実施の形態を図面によって説明する。 DETAILED DESCRIPTION OF THE INVENTION be described by the embodiments of the present invention with reference to the accompanying drawings. 図１、図２にて、本発明による投影露光装置の第１実施例を示す。 1, in FIG. 2, showing a first embodiment of a projection exposure apparatus according to the present invention. 図１は、本発明の第１実施例による通常使用時での投影露光装置を示す図である。 Figure 1 is a diagram showing a projection exposure apparatus in normal use according to a first embodiment of the present invention. 本第１実施例は、照明工程と露光工程を含む露光方法にて、 The first embodiment book, by the exposure method comprising an illumination step and the exposure step,
レチクル１のパターン面１ａの像をウエハ５の像面５ａ Image surface 5a of the wafer 5 an image of the pattern surface 1a of the reticle 1
（感光面）に結像する。 It focused on the (photosensitive surface). すなわち、ＫｒＦエキシマレーザー光源等の光源１０から発した光束は、照明光学系１ That is, the light beam emitted from a light source 10 such as a KrF excimer laser light source, the illumination optical system 1
１を経て、レチクルステージ１２上に載置された原版としてのレチクル１のパターン面１ａを、均一に照明する。 Through 1, the pattern surface 1a of the reticle 1 as placed on the original on a reticle stage 12, and uniformly illuminates. レチクル１のパターン面１ａから発した露光光は、 Exposure light emitted from the pattern surface 1a of the reticle 1,
投影光学系２を介して、ＸＹステージ８上に載置されたウエハ５の像面５ａに、パターン面１ａの像を結像する。 Via the projection optical system 2, the image plane 5a of the wafer 5 placed on the XY stage 8, it forms an image of the pattern surface 1a. なお、通常使用時とは、作動空間が、空気のみの状態をいう。 Note that the normal use, operation space, refers to the state of the air only.

【０００８】ここで、ＸＹステージ８上には、回転軸７ [0008] Here, on the XY stage 8, the rotating shaft 7
を介在して、レンズホルダ３に保持された補助レンズ４ Interposed the auxiliary lens 4 held by the lens holder 3
が設置されている。 There has been installed. この補助レンズ４は、回転軸７を中心に回転可能となっている。 The auxiliary lens 4 is rotatable about an axis of rotation 7. そして、図１に示す位置から１８０°回転すると、補助レンズ４は、投影光学系２ Then, when the 180 ° rotation from the position shown in FIG. 1, the auxiliary lens 4, the projection optical system 2
の真下に配置される。 It is placed directly under the. このとき、補助レンズ４の光軸は、投影光学系２の光軸と一致する。 In this case, the optical axis of the auxiliary lens 4 coincides with the optical axis of the projection optical system 2. また、ＸＹステージ８上には、箱形状の液体遮蔽板６が設置されている。 Further, on the XY stage 8, a liquid shielding plate 6 of the box shape is disposed.
図１では、簡単のため、液体遮蔽板６の断面のみ示す。 In Figure 1, for simplicity, it shows only the cross section of the liquid shielding plate 6.
そして、液体遮蔽板６に囲まれた空間に、油等の液体を入れて、作動空間のウエハ５側部分空間を液体とすることができる。 Then, the space surrounded by the liquid shielding plate 6, putting a liquid such as oil, the wafer 5 side subspace of the working space can be a liquid. 本第１実施例の投影露光装置を液浸状態にて使用する場合、補助レンズ４を投影光学系２の真下に配置し、液体遮蔽板６内に液体を入れる。 When using the projection exposure apparatus of the first embodiment in the liquid immersion state, the auxiliary lens 4 is disposed directly below the projection optical system 2, put the liquid into the liquid shield plate 6. このとき、補助レンズ４の上面（レチクル１側の面）と、投影光学系２の下面（最もウエハ５側の面）との間は、空気となる。 In this case, between the upper surface of the auxiliary lens 4 (the surface of the reticle 1 side), the lower surface of the projection optical system 2 (the surface nearest the wafer 5 side), the air. そして、補助レンズ４の下面（ウエハ５側の面） Then, the lower surface of the auxiliary lens 4 (the surface of the wafer 5 side)
と、ウエハ５との間は、液体となる。 If, between the wafer 5 becomes liquid. 図１の破線Ｍは、 Dashed line M in FIG. 1,
空気と液体の境界線を示す。 Indicating the boundary of air and liquid.

【０００９】図２は、本発明の第１実施例による液浸使用時での投影露光装置において、補助レンズ４の近傍を拡大して示した図である。 [0009] Figure 2 is a projection exposure apparatus at the time of immersion used according to a first embodiment of the present invention, is an enlarged view showing the vicinity of the auxiliary lens 4. 前述したように、液浸使用時では、補助レンズ４の上面側の空間は空気Ａとなり、補助レンズ４の下面側の空間は液体Ｌとなっている。 As described above, during immersion use, the space on the upper surface side of the auxiliary lens 4 becomes air A, the lower surface side of the space of the auxiliary lens 4 has a liquid L. また、本第１実施例における補助レンズ４の屈折率は、液体Ｌの屈折率とほぼ等しい値となっている。 The refractive index of the auxiliary lens 4 according to the first embodiment has a value substantially equal to the refractive index of the liquid L. 補助レンズ４の上面形状は、ウエハ５上の像面５ａの中心に結像するすべての光線Ｋが垂直に入射するような形状となっている。 The shape of the upper surface of the auxiliary lens 4, all rays K that forms the center of the image surface 5a of the wafer 5 has a shape such that incident perpendicularly. すなわち、補助レンズ４の上面の曲率中心が、補助レンズ４及び液体Ｌがない通常使用時の像面５ａの中心と一致している。 That is, the center of curvature of the upper surface of the auxiliary lens 4 coincides with the center of the auxiliary lens 4 and the image surface 5a when the liquid L is not normally used. そして、補助レンズ４の上面の曲率半径Ｒ 1は、次式を満たす。 Then, the radius of curvature R 1 of the upper surface of the auxiliary lens 4 satisfies the following equation. Ｒ 1 ＝ｄ 1 （１） ｄ 1 ：補助レンズ４上面からウエハ像面５ａまでの光軸Ｚ上の距離 R 1 = d 1 (1) d 1: the distance on the optical axis Z from the auxiliary lens 4 top surface to the wafer image plane 5a

【００１０】一方、補助レンズ４の下面形状は、平面形状となっている。 On the other hand, the lower surface shape of the auxiliary lens 4 has a planar shape. 前述したように、補助レンズ４と液体Ｌの屈折率は等しいため、像面５ａの中心付近に結像する全ての光線Ｋは、補助レンズ４の下面部においても、 As described above, since the auxiliary lens 4 and the refractive index of the liquid L are equal, all rays K that forms near the center of the image plane 5a, even in the lower surface of the auxiliary lens 4,
上面部と同様に、ほとんど屈折しない。 Like the top portion, hardly refracted. したがって、液浸使用時の収束半角は、通常使用時の収束半角と等しくなる。 Therefore, the convergence half-angle at the time of immersion used is equal to the convergence half of normal use. このとき、投影光学系２のウエハ５側の開口数Ｎ In this case, the numerical aperture N of the wafer 5 side of the projection optical system 2
Ａは、 ＮＡ＝ｎｓｉｎθ ｎ：液体の空気に対する屈折率 θ：収束半角 で求まる。 A is, NA = nsinθ n: refractive index of the liquid to air theta: obtained by convergence half. また、分解能Δｒは、次式で求まる。 Further, the resolution Δr is determined by the following equation. Δｒ＝ｋλ 0 ／ＮＡ λ 0 ：露光光の空気中での屈折率 ｋ：定数 Δr = kλ 0 / NA λ 0 : refractive index of exposure light in air k: constant

【００１１】したがって、液浸使用時は、通常使用時と比べて、開口数をｎ倍、像面５ａ中心付近における分解能を１／ｎに向上することができる。 Accordingly, the immersion time of use, compared with the normal use, n times the numerical aperture, the resolution in the image plane 5a near the center can be increased to 1 / n. また、本第１実施例では、像面５ａの中心に結像する全ての光線Ｋは、補助レンズ４によっては屈折しないため、球面収差が発生しない。 Further, in the first embodiment, all rays K that forms the center of the image surface 5a because it does not refracted by the auxiliary lens 4, the spherical aberration is not generated. 更に、補助レンズ４の色分散と液体Ｌの色分散とが等しい場合には、軸上色収差も発生しない。 Further, when the chromatic dispersion of the chromatic dispersion and the liquid L of the auxiliary lens 4 are equal, not even occur axial chromatic aberration. これにより、光軸Ｚ付近の像面５ａにおいて、液浸使用時であっても、通常使用時における結像性能がほぼ保たれる。 Thus, the image plane 5a in the vicinity of the optical axis Z, even during immersion use, imaging performance at normal use is substantially maintained.
更に、液浸使用時と通常使用時とで、投影光学系５による結像位置の変化もない。 Further, in a time when the immersion using a normal use, no change in the imaging position of the projection optical system 5.

【００１２】次に、図３にて、本発明による投影露光装置の第２実施例を示す。 [0012] Next, in FIG. 3, showing a second embodiment of a projection exposure apparatus according to the present invention. 本第２実施例は、補助レンズ４ The second embodiment, the auxiliary lens 4
の形状のみ、前記第１実施例と異なる。 Shape alone, different from the first embodiment. 図３は、本発明の第２実施例による液浸使用時での投影露光装置において、補助レンズ４の近傍を拡大して示した図である。 3, in the projection exposure apparatus at the time of immersion used according to a second embodiment of the present invention, is an enlarged view showing the vicinity of the auxiliary lens 4. 本第２実施例の補助レンズ４の上面部の形状は、前記第１ Shape of the upper surface of the auxiliary lens 4 of the second embodiment, the first
実施例の補助レンズ４の上面部の形状と等しい。 Equal to the shape of the upper surface portion of the auxiliary lens fourth embodiment. すなわち、上面部において（１）式の関係が成り立つ。 That is, the upper surface portion (1) of the relationship is established.

【００１３】一方、前記第１実施例の補助レンズ４の下面部が平面形状であるのに対して、本第２実施例の補助レンズ４の下面部の形状は曲面形状となっている。 Meanwhile, while the lower surface of the auxiliary lens 4 of the first embodiment is a flat shape, the shape of the lower surface of the auxiliary lens 4 of the second embodiment has a curved shape. そして、その下面形状は、上面形状と同様に、ウエハ５上の像面５ａの中心に結像する全ての光線Ｋが垂直に入射するような形状となっている。 Then, the lower surface shape is similar to the upper surface shape, all rays K that forms the center of the image surface 5a of the wafer 5 has a shape such that incident perpendicularly. すなわち、補助レンズ４の下面の曲率中心が、通常使用時の像面５ａの中心と一致している。 That is, the center of curvature of the lower surface of the auxiliary lens 4 coincides with the center of the image plane 5a of normal use. そして、補助レンズ４の下面の曲率半径Ｒ 2 Then, the lower surface of the auxiliary lens 4 the radius of curvature R 2
は、次式を満たす。 It satisfies the following equation. Ｒ 2 ＝ｄ 2 （２） ｄ 2 ：補助レンズ４下面からウエハ像面５ａまでの光軸Ｚ上の距離 R 2 = d 2 (2) d 2: distance on the optical axis Z from the auxiliary lens 4 the lower surface to the wafer image plane 5a

【００１４】本第２実施例によれば、補助レンズ４と液体Ｌの屈折率が異なるときや、温度変化等の環境変動によって液体Ｌの屈折率が変化するときであっても、収差や結像位置の変化が少ない。 According to the second embodiment, when the auxiliary lens 4 and the refractive index of the liquid L are different and, even when the refractive index of the liquid L is changed by environmental changes such as temperature changes, aberrations and forming change in image position is small. すなわち、像面５ａの中心に結像する全ての波長の光線Ｋは、補助レンズ４の下面においても、液体Ｌの屈折率や色分散に関わらず屈折しない。 That is, light rays K of all wavelengths focused on the center of the image surface 5a also in the lower surface of the auxiliary lens 4, not refracted regardless of the refractive index and color dispersion of the liquid L. したがって、本第２実施例においても、前記第１ Accordingly, the present also in the second embodiment, the first
実施例と同様に、液浸使用時に高い分解能を得ることができる。 Similar to the embodiment, it is possible to obtain a high resolution at the immersion use. また、通常使用時と液浸使用時とを比較しても、投影光学系２による結像位置が変化せず、像面５ａ Further, as compared with normal use and the time of immersion used, it does not change an imaging position of the projection optical system 2, the image surface 5a
での軸上色収差や球面収差の変化もなく、光軸Ｚ付近の像面５ａでの結像性能が維持される。 Axial chromatic aberration and no change in the spherical aberration, the imaging performance of the image plane 5a in the vicinity of the optical axis Z is maintained. 更に、温度変化等によって液体Ｌの屈折率が変化しても、結像位置、軸上色収差や球面収差の変化はない。 Furthermore, the refractive index of the liquid L due to temperature change or the like also vary, the imaging position change of the axial chromatic aberration and spherical aberration is not.

【００１５】次に、図４にて、本発明による投影露光装置の第３実施例を示す。 Next, in FIG. 4 shows a third embodiment of the projection exposure apparatus according to the present invention. 前記第１、第２実施例では液浸使用時に作動空間のウエハ５側部分空間の一部を液体としたが、本第３実施例では、液浸使用時に作動空間の全部を液体とする。 The first, in the second embodiment is a part of the wafer 5 side subspace of the working space at the immersion used was a liquid, in the third embodiment, the whole of the working space at the immersion using a liquid. すなわち、液浸使用時には、投影光学系２の最もウエハ５側の面が、液体に浸されることになる。 That is, at the time of immersion used, most wafer 5 side surface of the projection optical system 2, will be immersed in the liquid. したがって、本第３実施例の投影露光装置は、図１ Accordingly, the projection exposure apparatus of the third embodiment, FIG. 1
の液体遮蔽板６の上面が、投影光学系２の下面より高くなければならない。 The upper surface of the liquid shield plate 6 is, it must be higher than the lower surface of the projection optical system 2. 更に、前記第１、第２実施例の液浸使用時に用いる図１のレンズホルダ３、補助レンズ４、 Furthermore, the first, Figure 1 of the lens holder 3 to be used at the immersion use of the second embodiment, the auxiliary lens 4,
回転軸７は、不要となる。 Rotary shaft 7 is not required.

【００１６】図４は、液浸使用時において、投影露光装置の投影光学系２の最もウエハ５側の面を拡大して示した図である。 [0016] Figure 4, at the time of immersion used, is an enlarged view showing the most wafer 5 side surface of the projection optical system 2 of the projection exposure apparatus. 投影光学系２の最もウエハ５側の面の形状は、前記第２実施例の補助レンズ４の下面部の形状と等しい。 The shape of most wafer 5 side surface of the projection optical system 2 is equal to the shape of the lower surface of the auxiliary lens 4 of the second embodiment. すなわち、下面部において（２）式の関係が成り立つ。 That is, in the lower surface portion (2) of the relationship is established. 一方、通常使用時においても、図４に示す投影光学系２を用いることになるが、液浸使用時と同様に、像面５ａの中心付近に結像する全ての光線Ｋの屈折は生じない。 On the other hand, in normal use, but it will be used a projection optical system 2 shown in FIG. 4, in the same manner as when the immersion use, there is no refraction of all rays K that forms near the center of the image plane 5a . 本第３実施例においても、前記第２実施例と同様に、液浸使用時に高い分解能を得ることができる。 Also in the third embodiment, similarly to the second embodiment, it is possible to obtain a high resolution at the immersion use. また、通常使用時と液浸使用時とを比較しても、投影光学系２による結像位置が変化せず、像面５ａでの軸上色収差や球面収差の変化もなく、光軸Ｚ付近の像面５ａでの結像性能が維持される。 Further, as compared with normal use and the time of immersion used, the projection does not change an imaging position of the optical system 2, no change in axial chromatic aberration and spherical aberration at the image surface 5a, near the optical axis Z imaging performance is maintained at the image surface 5a. 更に、温度変化等によって液体Ｌの屈折率が変化しても、結像位置、軸上色収差や球面収差の変化はない。 Furthermore, the refractive index of the liquid L due to temperature change or the like also vary, the imaging position change of the axial chromatic aberration and spherical aberration is not.

【００１７】 [0017]

【発明の効果】以上のように本発明では、投影露光装置を通常状態と液浸状態とで共用することができる。 In the present invention as described above, according to the present invention, it is possible to share the projection exposure apparatus in the normal state and the liquid immersion state. そして、液浸使用時においても、結像位置や光軸付近の結像性能がほとんど変化しない投影露光装置を提供することができる。 Then, even when the liquid immersion use, it is possible to provide a projection exposure apparatus imaging performance near the imaging position and the optical axis is hardly changed. 更に、液体の屈折率の変化の影響の少ない投影露光装置及び露光方法を提供することができる。 Furthermore, it is possible to provide a small projection exposure apparatus and an exposure method of the influence of the change of the refractive index of the liquid.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図１】本発明の第１実施例による投影露光装置を示す図である。 1 is a diagram showing a projection exposure apparatus according to a first embodiment of the present invention.

【図２】本発明の第１実施例による投影露光装置の液浸使用時の状態を示す図である。 Is a diagram showing a state when the liquid immersion use of a projection exposure apparatus according to a first embodiment of the present invention; FIG.

【図３】本発明の第２実施例による投影露光装置の液浸使用時の状態を示す図である。 3 is a diagram showing a state when the liquid immersion use of a projection exposure apparatus according to a second embodiment of the present invention.

【図４】本発明の第３実施例による投影露光装置の液浸使用時の状態を示す図である。 Is a diagram showing a state when the liquid immersion use of a projection exposure apparatus according to a third embodiment of the present invention; FIG.

【符号の説明】 DESCRIPTION OF SYMBOLS

１…レチクル １ａ…パターン面 ２…投影光学系 ３…レンズホルダ ４…補助レンズ ５…ウエハ ５ａ…像面 ６…液体遮蔽板 ７…回転軸 ８…ＸＹステージ １０…光源 １１…照明光学系 １２…レチクルステージ Ｚ…光軸 Ｋ…光線 Ａ…気体 Ｌ…液体 1 ... reticle 1a ... pattern surface 2 ... projection optical system 3 ... lens holder 4 ... auxiliary lens 5 ... wafer 5a ... image surface 6 ... liquid shielding plate 7 ... rotary shaft 8 ... XY stage 10 ... light source 11 ... illumination optical system 12 ... The reticle stage Z ... optical axis K ... ray A ... gas L ... liquid

───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 2H087 KA21 LA00 NA04 PA01 PB01 QA01 QA03 5F046 BA03 CA04 CB12 CB25 CB26 CB27 DA13 ────────────────────────────────────────────────── ─── front page of continued F-term (reference) 2H087 KA21 LA00 NA04 PA01 PB01 QA01 QA03 5F046 BA03 CA04 CB12 CB25 CB26 CB27 DA13

Claims (4)

    【特許請求の範囲】 [The claims]
  1. 【請求項１】原版上に描画されたパターンを基板の感光面に転写する投影光学系を有する投影露光装置において、 前記投影光学系の最も基板側のレンズ面と前記感光面との空間に、補助レンズが挿脱可能に配置され、 該補助レンズの下面と前記感光面との空間は、液浸可能に形成され、 前記補助レンズの原版側レンズ面の曲率半径は、該原版側レンズ面から前記感光面までの光軸上の距離にほぼ等しくなるように形成されたことを特徴とする投影露光装置。 1. A projection exposure apparatus having a projection optical system for transferring the drawn pattern on an original onto a photosensitive surface of the substrate, the space between the lens surface closest to the substrate side and the photosensitive surface of the projection optical system, auxiliary lens is arranged removably, space between the lower surface and the photosensitive surface of the auxiliary lens is an immersion can be formed, the radius of curvature of the original-side lens surface of the auxiliary lens, the raw plate-side lens surface projection exposure apparatus characterized by being formed to be substantially equal to the distance on the optical axis to said photosensitive surface.
  2. 【請求項２】前記補助レンズの基板側レンズ面の曲率半径は、該基板側レンズ面から前記感光面までの光軸上の距離にほぼ等しくなるように形成されたことを特徴とする請求項１記載の投影露光装置。 Wherein the radius of curvature of the substrate-side lens surface of the auxiliary lens, claims, characterized in that it is formed to be substantially equal from the substrate-side lens surface to the distance on the optical axis to said photosensitive surface 1 projection exposure apparatus as claimed.
  3. 【請求項３】原版上に描画されたパターンを基板の感光面に転写する投影光学系を有する投影露光装置において、 前記投影光学系の最も基板側のレンズ面の曲率半径は、 3. A projection exposure apparatus having a projection optical system for transferring the drawn pattern on an original onto a photosensitive surface of the substrate, the radius of curvature of the most substrate side lens surface of the projection optical system,
    該基板側のレンズ面から前記感光面までの光軸上の距離にほぼ等しくなるように形成されたことを特徴とする投影露光装置。 Projection exposure apparatus characterized by being formed to be substantially equal from the lens surface of the substrate side to the distance on the optical axis to said photosensitive surface.
  4. 【請求項４】請求項１乃至請求項３のいずれか１項に記載の投影露光装置を用いて露光する方法において、 前記原版を所定の露光光で照明する照明工程と、 前記投影光学系を介して前記原版のパターン像を前記基板の感光面に露光する露光工程とを含むことを特徴とする露光方法。 4. A method of exposure using the projection exposure apparatus according to any one of claims 1 to 3, an illumination step of illuminating the original with a predetermined exposure light, the projection optical system exposure method comprising an exposure step of exposing the pattern image of the original onto a photosensitive surface of the substrate through.
JP10239562A 1998-08-11 1998-08-11 Projection aligner and exposure method Pending JP2000058436A (en)

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