JP2000058436A - Projection aligner and exposure method - Google Patents

Projection aligner and exposure method

Info

Publication number
JP2000058436A
JP2000058436A JP10239562A JP23956298A JP2000058436A JP 2000058436 A JP2000058436 A JP 2000058436A JP 10239562 A JP10239562 A JP 10239562A JP 23956298 A JP23956298 A JP 23956298A JP 2000058436 A JP2000058436 A JP 2000058436A
Authority
JP
Japan
Prior art keywords
lens
liquid
exposure
photosensitive
projection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10239562A
Other languages
Japanese (ja)
Inventor
Yohei Fujishima
Koichi Matsumoto
宏一 松本
洋平 藤島
Original Assignee
Nikon Corp
株式会社ニコン
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp, 株式会社ニコン filed Critical Nikon Corp
Priority to JP10239562A priority Critical patent/JP2000058436A/en
Publication of JP2000058436A publication Critical patent/JP2000058436A/en
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece
    • G03F7/70325Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lens
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece
    • G03F7/70341Immersion

Abstract

(57) [Summary] [PROBLEMS] Even when a projection optical system is used in a liquid immersion state, compared with a case where the projection optical system is used in a normal state, a change in an imaging position by the projection optical system and an imaging performance near an optical axis. Provided are a projection exposure apparatus and an exposure method with a small number. In a projection exposure apparatus having a projection optical system for transferring a pattern drawn on an original to a photosensitive surface of a substrate, a lens surface of the projection optical system closest to the substrate and a photosensitive surface. The auxiliary lens 4 is removably disposed in the space between the auxiliary lens 4 and the space between the lower surface of the auxiliary lens 4 and the photosensitive surface 5a is formed so as to be immersed in liquid. 1 is the original 1 side lens surface to the photosensitive surface 5
It is formed so as to be substantially equal to the distance d 1 on the optical axis Z up to a.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a projection exposure apparatus having a projection optical system for printing and transferring a pattern drawn on an original onto a substrate, and an exposure method.

[0002]

2. Description of the Related Art In recent years, miniaturization of a pattern transferred to a wafer as a photosensitive substrate has been desired. In order to achieve this, there are two methods of reducing the exposure wavelength and increasing the numerical aperture of the projection optical system.
Conventionally, among these methods, a liquid immersion type projection exposure apparatus has been proposed as a method of increasing the numerical aperture of a projection optical system. In an immersion type projection exposure apparatus, a space between the lens surface of the projection optical system closest to the wafer and the wafer, that is, the entire working distance (working distance) (hereinafter referred to as the working space) or the wafer side. Is a device for filling the subspace with a liquid such as oil. For example, the refractive index of air occupying the working space in normal use is 1.0, whereas the refractive index of oil is, for example, about 1.6. Therefore, if the entire working space or the partial space on the wafer side is replaced with such a liquid having a high refractive index, the numerical aperture on the wafer side of the projection optical system can be increased, and the exposure pattern can be miniaturized. it can.

[0003]

In the conventional liquid immersion type projection exposure apparatus, the working space is usually used with a gas such as air, and the entire working space or the wafer side is reduced by miniaturizing the pattern. When using liquid immersion with a partial space as a liquid,
Equivalent imaging performance could not be secured. For example, as a usage method during liquid immersion in which the wafer-side partial space of the working space is liquid, consider a case where a parallel plate glass is installed at the boundary between gas and liquid. In such a case, the following three problems occur.

The first problem is that when using liquid immersion, the position of the image formed by the projection optical system shifts due to refraction of light on the incident surface of the parallel plate glass. Therefore, it is necessary to move the projection optical system or the wafer so as to secure the focal length. Then, depending on the conditions at the time of using the liquid immersion, the imaging position may not be able to be adjusted on the wafer. The second problem is that a spherical aberration is caused by the parallel flat glass placed at the boundary between the gas and the liquid when the liquid immersion is used. As a result, the imaging performance is deteriorated when using the liquid immersion. Third, there is a problem that a change in imaging performance and an imaging position at the time of using the liquid immersion becomes large due to environmental fluctuation. That is, since the refractive index of the liquid changes significantly due to environmental changes such as temperature changes as compared with the refractive index of the gas, the imaging performance and the imaging position are not stable. Therefore, the present invention provides a projection exposure system in which, even when the projection optical system is used in the liquid immersion state, the imaging position by the projection optical system and the imaging performance near the optical axis are less changed than when the projection optical system is used in the normal state. It is an object to provide an apparatus and an exposure method.

[0005]

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problem. That is, when the reference numerals in FIG. 1 and FIG. In a projection exposure apparatus having a projection optical system (2) for transferring a pattern (1a) drawn on an original (1) to a photosensitive surface (5a) of a substrate (5), 5) Side lens surface and photosensitive surface (5a)
Auxiliary lens (4) is removably arranged in the space with
The space between the lower surface of the auxiliary lens (4) and the photosensitive surface (5a)
The radius of curvature (R 1 ) of the lens surface on the master (1) side of the auxiliary lens (4) is formed on the optical axis (Z) from the lens surface on the master (1) side to the photosensitive surface (5a). Distance (d 1 )
The projection exposure apparatus is formed so as to be substantially equal to the following. At this time, if the reference numerals given in FIG. 3 of the attached drawings are further added in parentheses, the radius of curvature (R 2 ) of the lens surface on the substrate (5) side of the auxiliary lens (4) is
It is preferable that the distance between the side lens surface and the photosensitive surface (5a) be substantially equal to the distance (d 2 ) on the optical axis (Z).

Further, according to the present invention, when the reference numerals given in FIGS. 1 and 4 of the accompanying drawings are added in parentheses, the pattern (1a) drawn on the original (1) is used for the photosensitive surface (5) of the substrate (5).
a) In a projection exposure apparatus having a projection optical system (2) for transferring to the substrate (5), the radius of curvature (R 2 ) of the lens surface closest to the substrate (5) of the projection optical system ( 2 ) is set to a projection exposure apparatus characterized in that it is formed to be substantially equal to the distance (d 2) on the optical axis (Z) from the surface to the photosensitive surface (5a). Further, according to the present invention, in the method of exposing using the projection exposure apparatus having the above-described configuration, the illumination step of illuminating the original (1) with predetermined exposure light is described with the reference numerals in parentheses in FIG. And an exposure step of exposing the pattern image (1a) of the original (1) to the photosensitive surface (5a) of the substrate (5) via the projection optical system (2).

[0007]

Embodiments of the present invention will be described with reference to the drawings. 1 and 2 show a first embodiment of a projection exposure apparatus according to the present invention. FIG. 1 is a view showing a projection exposure apparatus during normal use according to a first embodiment of the present invention. The first embodiment employs an exposure method including an illumination step and an exposure step,
The image of the pattern surface 1a of the reticle 1 is transferred to the image surface 5a of the wafer 5.
(Photosensitive surface). That is, a light beam emitted from a light source 10 such as a KrF excimer laser light source is
After that, the pattern surface 1a of the reticle 1 as an original placed on the reticle stage 12 is uniformly illuminated. Exposure light emitted from the pattern surface 1a of the reticle 1
The image of the pattern surface 1a is formed on the image surface 5a of the wafer 5 placed on the XY stage 8 via the projection optical system 2. The normal use refers to a state in which the working space is only air.

Here, on the XY stage 8, a rotating shaft 7 is provided.
Auxiliary lens 4 held by lens holder 3 with
Is installed. The auxiliary lens 4 is rotatable about a rotation shaft 7. When rotated 180 ° from the position shown in FIG.
Is placed directly below. At this time, the optical axis of the auxiliary lens 4 matches the optical axis of the projection optical system 2. On the XY stage 8, a box-shaped liquid shielding plate 6 is provided.
FIG. 1 shows only a cross section of the liquid shielding plate 6 for simplicity.
Then, a liquid such as oil is put into a space surrounded by the liquid shielding plate 6, and a partial space on the wafer 5 side of the working space can be made liquid. When the projection exposure apparatus according to the first embodiment is used in a liquid immersion state, the auxiliary lens 4 is disposed immediately below the projection optical system 2, and the liquid is introduced into the liquid shielding plate 6. At this time, the space between the upper surface of the auxiliary lens 4 (the surface on the reticle 1 side) and the lower surface of the projection optical system 2 (the surface closest to the wafer 5) is air. Then, the lower surface of the auxiliary lens 4 (the surface on the wafer 5 side)
, And the liquid between the wafer 5. The broken line M in FIG.
Shows the boundary between air and liquid.

FIG. 2 is an enlarged view of the vicinity of the auxiliary lens 4 in the projection exposure apparatus when using liquid immersion according to the first embodiment of the present invention. As described above, when the liquid immersion is used, the space on the upper surface side of the auxiliary lens 4 is air A, and the space on the lower surface side of the auxiliary lens 4 is liquid L. Further, the refractive index of the auxiliary lens 4 in the first embodiment is substantially equal to the refractive index of the liquid L. The shape of the upper surface of the auxiliary lens 4 is such that all the light rays K imaged at the center of the image plane 5a on the wafer 5 are vertically incident. That is, the center of curvature of the upper surface of the auxiliary lens 4 coincides with the center of the image plane 5a in normal use where there is no auxiliary lens 4 and no liquid L. The radius of curvature R 1 of the upper surface of the auxiliary lens 4 satisfies the following equation. R 1 = d 1 (1) d 1 : distance on the optical axis Z from the upper surface of the auxiliary lens 4 to the wafer image plane 5a

On the other hand, the lower surface of the auxiliary lens 4 has a planar shape. As described above, since the refractive index of the auxiliary lens 4 and that of the liquid L are equal, all the light rays K imaged in the vicinity of the center of the image plane 5 a
Like the upper surface, it hardly bends. Therefore, the half angle of convergence during use of the liquid immersion is equal to the half angle of convergence during normal use. At this time, the numerical aperture N of the projection optical system 2 on the wafer 5 side
A is obtained by NA = n sin θ n: refractive index of liquid to air θ: half angle of convergence. The resolution Δr is obtained by the following equation. Δr = kλ 0 / NA λ 0 : refractive index of exposure light in air k: constant

Therefore, when using the liquid immersion, the numerical aperture can be increased by n times and the resolution near the center of the image plane 5a can be improved to 1 / n as compared with the normal use. Further, in the first embodiment, all the light rays K imaged at the center of the image plane 5a are not refracted by the auxiliary lens 4, so that no spherical aberration occurs. Further, when the chromatic dispersion of the auxiliary lens 4 is equal to the chromatic dispersion of the liquid L, no axial chromatic aberration occurs. As a result, on the image plane 5a near the optical axis Z, the imaging performance during normal use is substantially maintained even during liquid immersion use.
Further, there is no change in the image forming position by the projection optical system 5 between the time of using the liquid immersion and the time of normal use.

Next, FIG. 3 shows a second embodiment of the projection exposure apparatus according to the present invention. In the second embodiment, the auxiliary lens 4
Only the shape is different from the first embodiment. FIG. 3 is an enlarged view of the vicinity of the auxiliary lens 4 in the projection exposure apparatus at the time of using the liquid immersion according to the second embodiment of the present invention. The shape of the upper surface of the auxiliary lens 4 of the second embodiment is the same as that of the first embodiment.
It is equal to the shape of the upper surface of the auxiliary lens 4 of the embodiment. That is, the relationship of the expression (1) is established in the upper surface portion.

On the other hand, the lower surface of the auxiliary lens 4 of the first embodiment has a planar shape, whereas the lower surface of the auxiliary lens 4 of the second embodiment has a curved surface. The lower surface shape is such that all the light rays K imaged at the center of the image plane 5a on the wafer 5 are vertically incident, as in the upper surface shape. That is, the center of curvature of the lower surface of the auxiliary lens 4 coincides with the center of the image plane 5a in normal use. Then, the curvature radius R 2 of the lower surface of the auxiliary lens 4
Satisfies the following equation. R 2 = d 2 (2) d 2 : distance on the optical axis Z from the lower surface of the auxiliary lens 4 to the wafer image plane 5a

According to the second embodiment, even when the refractive index of the auxiliary lens 4 is different from that of the liquid L, or when the refractive index of the liquid L changes due to environmental fluctuation such as temperature change, aberrations and / or aberrations may occur. Little change in image position. That is, the light rays K of all the wavelengths imaged at the center of the image plane 5a are not refracted on the lower surface of the auxiliary lens 4 irrespective of the refractive index or chromatic dispersion of the liquid L. Therefore, also in the second embodiment, the first
As in the embodiment, high resolution can be obtained when using immersion. Further, even when the normal use and the liquid immersion use are compared, the image forming position by the projection optical system 2 does not change, and the image plane 5a
The imaging performance on the image plane 5a near the optical axis Z is maintained without any change in axial chromatic aberration or spherical aberration at the time. Further, even if the refractive index of the liquid L changes due to a temperature change or the like, there is no change in the imaging position, axial chromatic aberration, and spherical aberration.

FIG. 4 shows a third embodiment of the projection exposure apparatus according to the present invention. In the first and second embodiments, a part of the partial space on the wafer 5 side of the working space is used as the liquid when using the liquid immersion, but in the third embodiment, the whole working space is used as the liquid when using the liquid immersion. That is, when the liquid immersion is used, the surface of the projection optical system 2 closest to the wafer 5 is immersed in the liquid. Therefore, the projection exposure apparatus of the third embodiment is different from that of FIG.
Must be higher than the lower surface of the projection optical system 2. Further, the lens holder 3, the auxiliary lens 4, and the lens holder 3 shown in FIG.
The rotating shaft 7 becomes unnecessary.

FIG. 4 is an enlarged view of the surface of the projection optical system 2 closest to the wafer 5 when the liquid immersion is used. The shape of the surface of the projection optical system 2 closest to the wafer 5 is equal to the shape of the lower surface of the auxiliary lens 4 in the second embodiment. That is, the relationship of the expression (2) is established on the lower surface. On the other hand, even in the normal use, the projection optical system 2 shown in FIG. 4 is used. However, as in the case of using the liquid immersion, all the light rays K imaged near the center of the image plane 5a are not refracted. . Also in the third embodiment, high resolution can be obtained when using liquid immersion, as in the second embodiment. Further, even when the normal use and the liquid immersion use are compared, the image forming position by the projection optical system 2 does not change, there is no change in the axial chromatic aberration and the spherical aberration on the image plane 5a, and there is no change in the vicinity of the optical axis Z. Is maintained on the image plane 5a. Further, even if the refractive index of the liquid L changes due to a temperature change or the like, there is no change in the imaging position, axial chromatic aberration, and spherical aberration.

[0017]

As described above, according to the present invention, the projection exposure apparatus can be used in both the normal state and the liquid immersion state. In addition, it is possible to provide a projection exposure apparatus in which the imaging performance near the imaging position and the optical axis hardly changes even when the liquid immersion is used. Further, it is possible to provide a projection exposure apparatus and an exposure method which are less affected by a change in the refractive index of the liquid.

[Brief description of the drawings]

FIG. 1 is a view showing a projection exposure apparatus according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a state of the projection exposure apparatus according to the first embodiment of the present invention when using liquid immersion.

FIG. 3 is a view showing a state of a projection exposure apparatus according to a second embodiment of the present invention when using liquid immersion.

FIG. 4 is a diagram showing a state of a projection exposure apparatus according to a third embodiment of the present invention when using liquid immersion.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Reticle 1a ... Pattern surface 2 ... Projection optical system 3 ... Lens holder 4 ... Auxiliary lens 5 ... Wafer 5a ... Image surface 6 ... Liquid shielding plate 7 ... Rotation axis 8 ... XY stage 10 ... Light source 11 ... Illumination optical system 12 ... Reticle stage Z: Optical axis K: Ray A: Gas L: Liquid

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2H087 KA21 LA00 NA04 PA01 PB01 QA01 QA03 5F046 BA03 CA04 CB12 CB25 CB26 CB27 DA13

Claims (4)

[Claims]
1. A projection exposure apparatus having a projection optical system for transferring a pattern drawn on an original onto a photosensitive surface of a substrate, wherein a projection optical system has a space between a lens surface closest to the substrate and the photosensitive surface. An auxiliary lens is disposed so as to be able to be inserted and removed, a space between the lower surface of the auxiliary lens and the photosensitive surface is formed so as to be immersed in liquid, and a radius of curvature of the original-side lens surface of the auxiliary lens is from the original-side lens surface. A projection exposure apparatus formed so as to be substantially equal to a distance on the optical axis to the photosensitive surface.
2. The apparatus according to claim 1, wherein a radius of curvature of the substrate side lens surface of the auxiliary lens is substantially equal to a distance on the optical axis from the substrate side lens surface to the photosensitive surface. 2. The projection exposure apparatus according to claim 1.
3. A projection exposure apparatus having a projection optical system for transferring a pattern drawn on an original onto a photosensitive surface of a substrate, wherein a radius of curvature of a lens surface closest to the substrate of the projection optical system is:
A projection exposure apparatus formed to be substantially equal to a distance on the optical axis from the lens surface on the substrate side to the photosensitive surface.
4. A method of exposing using the projection exposure apparatus according to claim 1, wherein an illumination step of illuminating the original with predetermined exposure light; Exposing the pattern image of the original to a photosensitive surface of the substrate through the exposure step.
JP10239562A 1998-08-11 1998-08-11 Projection aligner and exposure method Pending JP2000058436A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10239562A JP2000058436A (en) 1998-08-11 1998-08-11 Projection aligner and exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10239562A JP2000058436A (en) 1998-08-11 1998-08-11 Projection aligner and exposure method

Publications (1)

Publication Number Publication Date
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Family

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Family Applications (1)

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Country Status (1)

Country Link
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