JP2000058436A - Projection aligner and exposure method - Google Patents

Projection aligner and exposure method

Info

Publication number
JP2000058436A
JP2000058436A JP10239562A JP23956298A JP2000058436A JP 2000058436 A JP2000058436 A JP 2000058436A JP 10239562 A JP10239562 A JP 10239562A JP 23956298 A JP23956298 A JP 23956298A JP 2000058436 A JP2000058436 A JP 2000058436A
Authority
JP
Japan
Prior art keywords
optical system
surface
projection
lens
projection optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10239562A
Other languages
Japanese (ja)
Inventor
Yohei Fujishima
Koichi Matsumoto
宏一 松本
洋平 藤島
Original Assignee
Nikon Corp
株式会社ニコン
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp, 株式会社ニコン filed Critical Nikon Corp
Priority to JP10239562A priority Critical patent/JP2000058436A/en
Publication of JP2000058436A publication Critical patent/JP2000058436A/en
Application status is Pending legal-status Critical

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece
    • G03F7/70325Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lens
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece
    • G03F7/70341Immersion

Abstract

PROBLEM TO BE SOLVED: To provide a projection aligner and method for reducing the change of image forming performance at an image forming position and in the neighborhood of an optical axis in a projection optical system, even when this projection optical system is used in an immersion state compared with the case that the projection optical system is used in a normal state.
SOLUTION: This projection aligner is provided with a projection optical system 2 for transferring a pattern 1a plotted on an original art 1 to a photosensitive face 5a of a substrate 5. An auxiliary lens 4 is arranged so as to be inserted into and pulled out of a space between the lens face at the substrate 5 side of the projection optical system 2 and the photosensitive face 5a, and a space between the lower face of the auxiliary lens 4 and the photosensitive face 5a is formed to be immersion possible. Also, a curvature radius R1 of the lens face at the original art 1 side of the auxiliary lens 4 is formed, so as to be almost equal to a distance d1 on an optical axis Z from the lens face at the original art 1 side to the photosensitive face 5a.
COPYRIGHT: (C)2000,JPO

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は、原版上に描画されたパターンを基板上に焼付転写する投影光学系を有する投影露光装置及び露光方法に関する。 The present invention relates to relates to a projection exposure apparatus and an exposure method having a projection optical system for baking transferring the pattern drawn on the original plate onto the substrate.

【0002】 [0002]

【従来の技術】近年、感光性基板としてのウエハに転写されるパターンの微細化が望まれている。 In recent years, miniaturization of a pattern to be transferred onto the wafer as a photosensitive substrate is desired. これを達成するためには、露光波長の短波長化を図るか、投影光学系の開口数の増大化を図るかの2つの方法が考えられる。 To accomplish this, either achieve shorter exposure wavelength, two ways or reduce the numerical aperture of the increase in the projection optical system can be considered.
従来より、これらのうち投影光学系の開口数の増大化を図る方法として、液浸式の投影露光装置が提案されている。 Conventionally, as a method to reduce the numerical aperture of an increase of of these projection optical systems, an immersion type projection exposure apparatus has been proposed. 液浸式の投影露光装置は、投影光学系の最もウエハ側のレンズ面と、ウエハとの空間、すなわち、作動距離(ワーキングディスタンス)の空間(以後、作動空間と呼ぶ。)の全部又はウエハ側の部分空間を、油等の液体で満たす装置である。 Immersion projection exposure apparatus, and most of the wafer-side lens surface of the projection optical system, the space between the wafer, i.e., the space (hereinafter referred to as the working space.) All or wafer side of the working distance (working distance) the subspace, a device filled with a liquid such as oil. 通常使用時の作動空間を占める空気の屈折率が1.0であるのに対して、例えば、油の屈折率は約1.6である。 With respect to the refractive index of the air occupying the working space during normal use from 1.0, for example, the refractive index of the oil is approximately 1.6. このため、作動空間の全部又はウエハ側の部分空間を、このように屈折率の高い液体に置換すれば、投影光学系のウエハ側の開口数を大きくし、露光パターンの微細化を図ることができる。 Thus, all or a wafer side of the subspace of the working space, if substituted to such a high refractive index liquid, and increase the numerical aperture on the wafer side of the projection optical system, is possible to achieve miniaturization of the exposure pattern it can.

【0003】 [0003]

【発明が解決しようとする課題】上記従来の液浸式の投影露光装置においては、作動空間を空気等の気体とする通常使用時と、パターンの微細化を図り作動空間の全部又はウエハ側の部分空間を液体とする液浸使用時とで、 In [0006] the projection exposure apparatus of a conventional immersion type is a normal use of a gas such as air to the working space, the working space aims to finer patterns of all or wafer side subspace by the time immersion use a liquid,
同等の結像性能を確保できなかった。 It was not able to secure the equivalent of imaging performance. 例えば、作動空間のウエハ側部分空間を液体とする液浸時の使用方法として、平行平板ガラスを気体と液体の境界に設置する場合を考える。 For example, the wafer-side partial space of the working space as a method used at the time of immersion of the liquid, consider the case of installing a parallel plate glass to the boundary between the gas and the liquid. このような場合、以下の3つの不具合が発生する。 In such a case, the following three problems occur.

【0004】1つめは、液浸使用時、平行平板ガラスの入射面での光の屈折によって、投影光学系による結像位置がずれる不具合である。 [0004] The first is when the immersion use, the refraction of light at the incident surface of the parallel plate glass, it is trouble shifted imaging position of the projection optical system. そのため、焦点距離を確保するように、投影光学系又はウエハを移動させる必要がある。 Therefore, to ensure the focal length, it is necessary to move the projection optical system or the wafer. そして、その液浸使用時の条件によっては、結像位置をウエハ上に合わせられなくなる場合がある。 Then, depending on the conditions at the time of immersion used, it may keyed not the image forming position on the wafer. 2つめは、液浸使用時に気体と液体の境界に設置される平行平板ガラスによって、球面収差が生じる不具合である。 Second, the parallel plate glass to be installed at the boundary of the gas and liquid at the immersion use, a problem that spherical aberration occurs. これによって、液浸使用時には結像性能が悪くなる。 As a result, imaging performance is poor at the time of immersion use. 3つめは、環境変動により液浸使用時の結像性能や結像位置の変化が大きくなる不具合である。 Third, a problem that a change in imaging performance and image formation position during immersion use increases due to environmental fluctuations. すなわち、液体の屈折率は、気体の屈折率に比べて、温度変化等の環境変動によって大きく変化するため、結像性能や結像位置が安定しない。 That is, the refractive index of the liquid, as compared to the refractive index of the gas, to vary greatly depending on environmental changes such as temperature changes, is not stable imaging performance and image formation position. したがって本発明は、投影光学系を液浸状態で使用した場合でも、通常状態で使用した場合と比べて、投影光学系による結像位置と、光軸付近の結像性能の変化の少ない投影露光装置及び露光方法を提供することを課題とする。 Accordingly, the present invention, even when using a projection optical system in an immersion state, as compared with the case of using a normal state, the imaging position of the projection optical system, a small projection exposure of a change in imaging performance in the vicinity of the optical axis and to provide an apparatus and an exposure method.

【0005】 [0005]

【課題を解決するための手段】本発明は上記課題を解決するためになされたものであり、すなわち、添付図面の図1及び図2に付した符号をカッコ内に付記すると、本発明は、原版(1)上に描画されたパターン(1a)を基板(5)の感光面(5a)に転写する投影光学系(2)を有する投影露光装置において、投影光学系(2)の最も基板(5)側のレンズ面と感光面(5a) The present invention SUMMARY OF THE INVENTION has been made to solve the above problems, i.e., when the reference numerals affixed to Figures 1 and 2 of the accompanying drawings appended in parentheses, the present invention is, most substrates of the original in a projection exposure apparatus having a photosensitive surface of the substrate has been pattern (1a) drawn in (1) above (5) a projection optical system for transferring the (5a) (2), the projection optical system (2) ( 5) lens surface side and the photosensitive surface (5a)
との空間に、補助レンズ(4)が挿脱可能に配置され、 The space between the auxiliary lens (4) is arranged removably,
補助レンズ(4)の下面と感光面(5a)との空間は、 Space between the lower surface and the photosensitive surface of the auxiliary lens (4) (5a) is
液浸可能に形成され、補助レンズ(4)の原版(1)側レンズ面の曲率半径(R 1 )は、原版(1)側レンズ面から感光面(5a)までの光軸(Z)上の距離(d 1 Immersion capable formed, the radius of curvature of the original (1) side lens surface of the auxiliary lens (4) (R 1) is an original (1) the optical axis from the lens surface to the photosensitive surface (5a) (Z) above the distance (d 1)
にほぼ等しくなるように形成されたことを特徴とする投影露光装置である。 A projection exposure apparatus characterized in that it is formed to be substantially equal to. その際、更に添付図面の図3に付した符号をカッコ内に付記すると、補助レンズ(4)の基板(5)側レンズ面の曲率半径(R 2 )は、基板(5) At that time, further when the reference numerals used in FIG. 3 of the accompanying drawings appended in parentheses, the radius of curvature of the substrate (5) side lens surface of the auxiliary lens (4) (R 2), the substrate (5)
側レンズ面から感光面(5a)までの光軸(Z)上の距離(d 2 )にほぼ等しくなるように形成されることが好ましい。 It is formed to be approximately equal from the side the lens surface on the photosensitive surface (5a) to the optical axis (Z) distance on the (d 2) is preferred.

【0006】また本発明は、添付図面の図1及び図4に付した符号をカッコ内に付記すると、原版(1)上に描画されたパターン(1a)を基板(5)の感光面(5 [0006] The present invention, when the reference numerals affixed to FIGS. 1 and 4 of the accompanying drawings appended in parentheses, the photosensitive surface of the original (1) the pattern (1a) which has been written on the substrate (5) (5
a)に転写する投影光学系(2)を有する投影露光装置において、投影光学系(2)の最も基板(5)側のレンズ面の曲率半径(R 2 )は、基板(5)側のレンズ面から感光面(5a)までの光軸(Z)上の距離(d 2 )にほぼ等しくなるように形成されたことを特徴とする投影露光装置である。 In a projection exposure apparatus having a projection optical system for transferring the a) (2), most board (5) curvature of the lens surface of the side radius of the projection optical system (2) (R 2), the substrate (5) side of the lens a projection exposure apparatus characterized in that it is formed to be substantially equal to the distance (d 2) on the optical axis (Z) from the surface to the photosensitive surface (5a). また本発明は、添付図面の図1に付した符号をカッコ内に付記すると、上述の構成の投影露光装置を用いて露光する方法において、原版(1)を所定の露光光で照明する照明工程と、投影光学系(2)を介して原版(1)のパターン像(1a)を基板(5)の感光面(5a)に露光する露光工程とを含むことを特徴とする露光方法である。 The present invention, by appending the reference numerals affixed to Figure 1 of the accompanying drawings in parentheses, in the method of exposure using the projection exposure apparatus of the above-described configuration, the illumination step of illuminating an original (1) at a predetermined exposure light When, an exposure method, which comprises an exposure step of the pattern image of an original (1) through a projection optical system (2) to (1a) to expose the photosensitive surface of the substrate (5) (5a).

【0007】 [0007]

【発明の実施の形態】本発明の実施の形態を図面によって説明する。 DETAILED DESCRIPTION OF THE INVENTION be described by the embodiments of the present invention with reference to the accompanying drawings. 図1、図2にて、本発明による投影露光装置の第1実施例を示す。 1, in FIG. 2, showing a first embodiment of a projection exposure apparatus according to the present invention. 図1は、本発明の第1実施例による通常使用時での投影露光装置を示す図である。 Figure 1 is a diagram showing a projection exposure apparatus in normal use according to a first embodiment of the present invention. 本第1実施例は、照明工程と露光工程を含む露光方法にて、 The first embodiment book, by the exposure method comprising an illumination step and the exposure step,
レチクル1のパターン面1aの像をウエハ5の像面5a Image surface 5a of the wafer 5 an image of the pattern surface 1a of the reticle 1
(感光面)に結像する。 It focused on the (photosensitive surface). すなわち、KrFエキシマレーザー光源等の光源10から発した光束は、照明光学系1 That is, the light beam emitted from a light source 10 such as a KrF excimer laser light source, the illumination optical system 1
1を経て、レチクルステージ12上に載置された原版としてのレチクル1のパターン面1aを、均一に照明する。 Through 1, the pattern surface 1a of the reticle 1 as placed on the original on a reticle stage 12, and uniformly illuminates. レチクル1のパターン面1aから発した露光光は、 Exposure light emitted from the pattern surface 1a of the reticle 1,
投影光学系2を介して、XYステージ8上に載置されたウエハ5の像面5aに、パターン面1aの像を結像する。 Via the projection optical system 2, the image plane 5a of the wafer 5 placed on the XY stage 8, it forms an image of the pattern surface 1a. なお、通常使用時とは、作動空間が、空気のみの状態をいう。 Note that the normal use, operation space, refers to the state of the air only.

【0008】ここで、XYステージ8上には、回転軸7 [0008] Here, on the XY stage 8, the rotating shaft 7
を介在して、レンズホルダ3に保持された補助レンズ4 Interposed the auxiliary lens 4 held by the lens holder 3
が設置されている。 There has been installed. この補助レンズ4は、回転軸7を中心に回転可能となっている。 The auxiliary lens 4 is rotatable about an axis of rotation 7. そして、図1に示す位置から180°回転すると、補助レンズ4は、投影光学系2 Then, when the 180 ° rotation from the position shown in FIG. 1, the auxiliary lens 4, the projection optical system 2
の真下に配置される。 It is placed directly under the. このとき、補助レンズ4の光軸は、投影光学系2の光軸と一致する。 In this case, the optical axis of the auxiliary lens 4 coincides with the optical axis of the projection optical system 2. また、XYステージ8上には、箱形状の液体遮蔽板6が設置されている。 Further, on the XY stage 8, a liquid shielding plate 6 of the box shape is disposed.
図1では、簡単のため、液体遮蔽板6の断面のみ示す。 In Figure 1, for simplicity, it shows only the cross section of the liquid shielding plate 6.
そして、液体遮蔽板6に囲まれた空間に、油等の液体を入れて、作動空間のウエハ5側部分空間を液体とすることができる。 Then, the space surrounded by the liquid shielding plate 6, putting a liquid such as oil, the wafer 5 side subspace of the working space can be a liquid. 本第1実施例の投影露光装置を液浸状態にて使用する場合、補助レンズ4を投影光学系2の真下に配置し、液体遮蔽板6内に液体を入れる。 When using the projection exposure apparatus of the first embodiment in the liquid immersion state, the auxiliary lens 4 is disposed directly below the projection optical system 2, put the liquid into the liquid shield plate 6. このとき、補助レンズ4の上面(レチクル1側の面)と、投影光学系2の下面(最もウエハ5側の面)との間は、空気となる。 In this case, between the upper surface of the auxiliary lens 4 (the surface of the reticle 1 side), the lower surface of the projection optical system 2 (the surface nearest the wafer 5 side), the air. そして、補助レンズ4の下面(ウエハ5側の面) Then, the lower surface of the auxiliary lens 4 (the surface of the wafer 5 side)
と、ウエハ5との間は、液体となる。 If, between the wafer 5 becomes liquid. 図1の破線Mは、 Dashed line M in FIG. 1,
空気と液体の境界線を示す。 Indicating the boundary of air and liquid.

【0009】図2は、本発明の第1実施例による液浸使用時での投影露光装置において、補助レンズ4の近傍を拡大して示した図である。 [0009] Figure 2 is a projection exposure apparatus at the time of immersion used according to a first embodiment of the present invention, is an enlarged view showing the vicinity of the auxiliary lens 4. 前述したように、液浸使用時では、補助レンズ4の上面側の空間は空気Aとなり、補助レンズ4の下面側の空間は液体Lとなっている。 As described above, during immersion use, the space on the upper surface side of the auxiliary lens 4 becomes air A, the lower surface side of the space of the auxiliary lens 4 has a liquid L. また、本第1実施例における補助レンズ4の屈折率は、液体Lの屈折率とほぼ等しい値となっている。 The refractive index of the auxiliary lens 4 according to the first embodiment has a value substantially equal to the refractive index of the liquid L. 補助レンズ4の上面形状は、ウエハ5上の像面5aの中心に結像するすべての光線Kが垂直に入射するような形状となっている。 The shape of the upper surface of the auxiliary lens 4, all rays K that forms the center of the image surface 5a of the wafer 5 has a shape such that incident perpendicularly. すなわち、補助レンズ4の上面の曲率中心が、補助レンズ4及び液体Lがない通常使用時の像面5aの中心と一致している。 That is, the center of curvature of the upper surface of the auxiliary lens 4 coincides with the center of the auxiliary lens 4 and the image surface 5a when the liquid L is not normally used. そして、補助レンズ4の上面の曲率半径R 1は、次式を満たす。 Then, the radius of curvature R 1 of the upper surface of the auxiliary lens 4 satisfies the following equation. 1 =d 1 (1) d 1 :補助レンズ4上面からウエハ像面5aまでの光軸Z上の距離 R 1 = d 1 (1) d 1: the distance on the optical axis Z from the auxiliary lens 4 top surface to the wafer image plane 5a

【0010】一方、補助レンズ4の下面形状は、平面形状となっている。 On the other hand, the lower surface shape of the auxiliary lens 4 has a planar shape. 前述したように、補助レンズ4と液体Lの屈折率は等しいため、像面5aの中心付近に結像する全ての光線Kは、補助レンズ4の下面部においても、 As described above, since the auxiliary lens 4 and the refractive index of the liquid L are equal, all rays K that forms near the center of the image plane 5a, even in the lower surface of the auxiliary lens 4,
上面部と同様に、ほとんど屈折しない。 Like the top portion, hardly refracted. したがって、液浸使用時の収束半角は、通常使用時の収束半角と等しくなる。 Therefore, the convergence half-angle at the time of immersion used is equal to the convergence half of normal use. このとき、投影光学系2のウエハ5側の開口数N In this case, the numerical aperture N of the wafer 5 side of the projection optical system 2
Aは、 NA=nsinθ n:液体の空気に対する屈折率 θ:収束半角 で求まる。 A is, NA = nsinθ n: refractive index of the liquid to air theta: obtained by convergence half. また、分解能Δrは、次式で求まる。 Further, the resolution Δr is determined by the following equation. Δr=kλ 0 /NA λ 0 :露光光の空気中での屈折率 k:定数 Δr = kλ 0 / NA λ 0 : refractive index of exposure light in air k: constant

【0011】したがって、液浸使用時は、通常使用時と比べて、開口数をn倍、像面5a中心付近における分解能を1/nに向上することができる。 Accordingly, the immersion time of use, compared with the normal use, n times the numerical aperture, the resolution in the image plane 5a near the center can be increased to 1 / n. また、本第1実施例では、像面5aの中心に結像する全ての光線Kは、補助レンズ4によっては屈折しないため、球面収差が発生しない。 Further, in the first embodiment, all rays K that forms the center of the image surface 5a because it does not refracted by the auxiliary lens 4, the spherical aberration is not generated. 更に、補助レンズ4の色分散と液体Lの色分散とが等しい場合には、軸上色収差も発生しない。 Further, when the chromatic dispersion of the chromatic dispersion and the liquid L of the auxiliary lens 4 are equal, not even occur axial chromatic aberration. これにより、光軸Z付近の像面5aにおいて、液浸使用時であっても、通常使用時における結像性能がほぼ保たれる。 Thus, the image plane 5a in the vicinity of the optical axis Z, even during immersion use, imaging performance at normal use is substantially maintained.
更に、液浸使用時と通常使用時とで、投影光学系5による結像位置の変化もない。 Further, in a time when the immersion using a normal use, no change in the imaging position of the projection optical system 5.

【0012】次に、図3にて、本発明による投影露光装置の第2実施例を示す。 [0012] Next, in FIG. 3, showing a second embodiment of a projection exposure apparatus according to the present invention. 本第2実施例は、補助レンズ4 The second embodiment, the auxiliary lens 4
の形状のみ、前記第1実施例と異なる。 Shape alone, different from the first embodiment. 図3は、本発明の第2実施例による液浸使用時での投影露光装置において、補助レンズ4の近傍を拡大して示した図である。 3, in the projection exposure apparatus at the time of immersion used according to a second embodiment of the present invention, is an enlarged view showing the vicinity of the auxiliary lens 4. 本第2実施例の補助レンズ4の上面部の形状は、前記第1 Shape of the upper surface of the auxiliary lens 4 of the second embodiment, the first
実施例の補助レンズ4の上面部の形状と等しい。 Equal to the shape of the upper surface portion of the auxiliary lens fourth embodiment. すなわち、上面部において(1)式の関係が成り立つ。 That is, the upper surface portion (1) of the relationship is established.

【0013】一方、前記第1実施例の補助レンズ4の下面部が平面形状であるのに対して、本第2実施例の補助レンズ4の下面部の形状は曲面形状となっている。 Meanwhile, while the lower surface of the auxiliary lens 4 of the first embodiment is a flat shape, the shape of the lower surface of the auxiliary lens 4 of the second embodiment has a curved shape. そして、その下面形状は、上面形状と同様に、ウエハ5上の像面5aの中心に結像する全ての光線Kが垂直に入射するような形状となっている。 Then, the lower surface shape is similar to the upper surface shape, all rays K that forms the center of the image surface 5a of the wafer 5 has a shape such that incident perpendicularly. すなわち、補助レンズ4の下面の曲率中心が、通常使用時の像面5aの中心と一致している。 That is, the center of curvature of the lower surface of the auxiliary lens 4 coincides with the center of the image plane 5a of normal use. そして、補助レンズ4の下面の曲率半径R 2 Then, the lower surface of the auxiliary lens 4 the radius of curvature R 2
は、次式を満たす。 It satisfies the following equation. 2 =d 2 (2) d 2 :補助レンズ4下面からウエハ像面5aまでの光軸Z上の距離 R 2 = d 2 (2) d 2: distance on the optical axis Z from the auxiliary lens 4 the lower surface to the wafer image plane 5a

【0014】本第2実施例によれば、補助レンズ4と液体Lの屈折率が異なるときや、温度変化等の環境変動によって液体Lの屈折率が変化するときであっても、収差や結像位置の変化が少ない。 According to the second embodiment, when the auxiliary lens 4 and the refractive index of the liquid L are different and, even when the refractive index of the liquid L is changed by environmental changes such as temperature changes, aberrations and forming change in image position is small. すなわち、像面5aの中心に結像する全ての波長の光線Kは、補助レンズ4の下面においても、液体Lの屈折率や色分散に関わらず屈折しない。 That is, light rays K of all wavelengths focused on the center of the image surface 5a also in the lower surface of the auxiliary lens 4, not refracted regardless of the refractive index and color dispersion of the liquid L. したがって、本第2実施例においても、前記第1 Accordingly, the present also in the second embodiment, the first
実施例と同様に、液浸使用時に高い分解能を得ることができる。 Similar to the embodiment, it is possible to obtain a high resolution at the immersion use. また、通常使用時と液浸使用時とを比較しても、投影光学系2による結像位置が変化せず、像面5a Further, as compared with normal use and the time of immersion used, it does not change an imaging position of the projection optical system 2, the image surface 5a
での軸上色収差や球面収差の変化もなく、光軸Z付近の像面5aでの結像性能が維持される。 Axial chromatic aberration and no change in the spherical aberration, the imaging performance of the image plane 5a in the vicinity of the optical axis Z is maintained. 更に、温度変化等によって液体Lの屈折率が変化しても、結像位置、軸上色収差や球面収差の変化はない。 Furthermore, the refractive index of the liquid L due to temperature change or the like also vary, the imaging position change of the axial chromatic aberration and spherical aberration is not.

【0015】次に、図4にて、本発明による投影露光装置の第3実施例を示す。 Next, in FIG. 4 shows a third embodiment of the projection exposure apparatus according to the present invention. 前記第1、第2実施例では液浸使用時に作動空間のウエハ5側部分空間の一部を液体としたが、本第3実施例では、液浸使用時に作動空間の全部を液体とする。 The first, in the second embodiment is a part of the wafer 5 side subspace of the working space at the immersion used was a liquid, in the third embodiment, the whole of the working space at the immersion using a liquid. すなわち、液浸使用時には、投影光学系2の最もウエハ5側の面が、液体に浸されることになる。 That is, at the time of immersion used, most wafer 5 side surface of the projection optical system 2, will be immersed in the liquid. したがって、本第3実施例の投影露光装置は、図1 Accordingly, the projection exposure apparatus of the third embodiment, FIG. 1
の液体遮蔽板6の上面が、投影光学系2の下面より高くなければならない。 The upper surface of the liquid shield plate 6 is, it must be higher than the lower surface of the projection optical system 2. 更に、前記第1、第2実施例の液浸使用時に用いる図1のレンズホルダ3、補助レンズ4、 Furthermore, the first, Figure 1 of the lens holder 3 to be used at the immersion use of the second embodiment, the auxiliary lens 4,
回転軸7は、不要となる。 Rotary shaft 7 is not required.

【0016】図4は、液浸使用時において、投影露光装置の投影光学系2の最もウエハ5側の面を拡大して示した図である。 [0016] Figure 4, at the time of immersion used, is an enlarged view showing the most wafer 5 side surface of the projection optical system 2 of the projection exposure apparatus. 投影光学系2の最もウエハ5側の面の形状は、前記第2実施例の補助レンズ4の下面部の形状と等しい。 The shape of most wafer 5 side surface of the projection optical system 2 is equal to the shape of the lower surface of the auxiliary lens 4 of the second embodiment. すなわち、下面部において(2)式の関係が成り立つ。 That is, in the lower surface portion (2) of the relationship is established. 一方、通常使用時においても、図4に示す投影光学系2を用いることになるが、液浸使用時と同様に、像面5aの中心付近に結像する全ての光線Kの屈折は生じない。 On the other hand, in normal use, but it will be used a projection optical system 2 shown in FIG. 4, in the same manner as when the immersion use, there is no refraction of all rays K that forms near the center of the image plane 5a . 本第3実施例においても、前記第2実施例と同様に、液浸使用時に高い分解能を得ることができる。 Also in the third embodiment, similarly to the second embodiment, it is possible to obtain a high resolution at the immersion use. また、通常使用時と液浸使用時とを比較しても、投影光学系2による結像位置が変化せず、像面5aでの軸上色収差や球面収差の変化もなく、光軸Z付近の像面5aでの結像性能が維持される。 Further, as compared with normal use and the time of immersion used, the projection does not change an imaging position of the optical system 2, no change in axial chromatic aberration and spherical aberration at the image surface 5a, near the optical axis Z imaging performance is maintained at the image surface 5a. 更に、温度変化等によって液体Lの屈折率が変化しても、結像位置、軸上色収差や球面収差の変化はない。 Furthermore, the refractive index of the liquid L due to temperature change or the like also vary, the imaging position change of the axial chromatic aberration and spherical aberration is not.

【0017】 [0017]

【発明の効果】以上のように本発明では、投影露光装置を通常状態と液浸状態とで共用することができる。 In the present invention as described above, according to the present invention, it is possible to share the projection exposure apparatus in the normal state and the liquid immersion state. そして、液浸使用時においても、結像位置や光軸付近の結像性能がほとんど変化しない投影露光装置を提供することができる。 Then, even when the liquid immersion use, it is possible to provide a projection exposure apparatus imaging performance near the imaging position and the optical axis is hardly changed. 更に、液体の屈折率の変化の影響の少ない投影露光装置及び露光方法を提供することができる。 Furthermore, it is possible to provide a small projection exposure apparatus and an exposure method of the influence of the change of the refractive index of the liquid.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の第1実施例による投影露光装置を示す図である。 1 is a diagram showing a projection exposure apparatus according to a first embodiment of the present invention.

【図2】本発明の第1実施例による投影露光装置の液浸使用時の状態を示す図である。 Is a diagram showing a state when the liquid immersion use of a projection exposure apparatus according to a first embodiment of the present invention; FIG.

【図3】本発明の第2実施例による投影露光装置の液浸使用時の状態を示す図である。 3 is a diagram showing a state when the liquid immersion use of a projection exposure apparatus according to a second embodiment of the present invention.

【図4】本発明の第3実施例による投影露光装置の液浸使用時の状態を示す図である。 Is a diagram showing a state when the liquid immersion use of a projection exposure apparatus according to a third embodiment of the present invention; FIG.

【符号の説明】 DESCRIPTION OF SYMBOLS

1…レチクル 1a…パターン面 2…投影光学系 3…レンズホルダ 4…補助レンズ 5…ウエハ 5a…像面 6…液体遮蔽板 7…回転軸 8…XYステージ 10…光源 11…照明光学系 12…レチクルステージ Z…光軸 K…光線 A…気体 L…液体 1 ... reticle 1a ... pattern surface 2 ... projection optical system 3 ... lens holder 4 ... auxiliary lens 5 ... wafer 5a ... image surface 6 ... liquid shielding plate 7 ... rotary shaft 8 ... XY stage 10 ... light source 11 ... illumination optical system 12 ... The reticle stage Z ... optical axis K ... ray A ... gas L ... liquid

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 2H087 KA21 LA00 NA04 PA01 PB01 QA01 QA03 5F046 BA03 CA04 CB12 CB25 CB26 CB27 DA13 ────────────────────────────────────────────────── ─── front page of continued F-term (reference) 2H087 KA21 LA00 NA04 PA01 PB01 QA01 QA03 5F046 BA03 CA04 CB12 CB25 CB26 CB27 DA13

Claims (4)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】原版上に描画されたパターンを基板の感光面に転写する投影光学系を有する投影露光装置において、 前記投影光学系の最も基板側のレンズ面と前記感光面との空間に、補助レンズが挿脱可能に配置され、 該補助レンズの下面と前記感光面との空間は、液浸可能に形成され、 前記補助レンズの原版側レンズ面の曲率半径は、該原版側レンズ面から前記感光面までの光軸上の距離にほぼ等しくなるように形成されたことを特徴とする投影露光装置。 1. A projection exposure apparatus having a projection optical system for transferring the drawn pattern on an original onto a photosensitive surface of the substrate, the space between the lens surface closest to the substrate side and the photosensitive surface of the projection optical system, auxiliary lens is arranged removably, space between the lower surface and the photosensitive surface of the auxiliary lens is an immersion can be formed, the radius of curvature of the original-side lens surface of the auxiliary lens, the raw plate-side lens surface projection exposure apparatus characterized by being formed to be substantially equal to the distance on the optical axis to said photosensitive surface.
  2. 【請求項2】前記補助レンズの基板側レンズ面の曲率半径は、該基板側レンズ面から前記感光面までの光軸上の距離にほぼ等しくなるように形成されたことを特徴とする請求項1記載の投影露光装置。 Wherein the radius of curvature of the substrate-side lens surface of the auxiliary lens, claims, characterized in that it is formed to be substantially equal from the substrate-side lens surface to the distance on the optical axis to said photosensitive surface 1 projection exposure apparatus as claimed.
  3. 【請求項3】原版上に描画されたパターンを基板の感光面に転写する投影光学系を有する投影露光装置において、 前記投影光学系の最も基板側のレンズ面の曲率半径は、 3. A projection exposure apparatus having a projection optical system for transferring the drawn pattern on an original onto a photosensitive surface of the substrate, the radius of curvature of the most substrate side lens surface of the projection optical system,
    該基板側のレンズ面から前記感光面までの光軸上の距離にほぼ等しくなるように形成されたことを特徴とする投影露光装置。 Projection exposure apparatus characterized by being formed to be substantially equal from the lens surface of the substrate side to the distance on the optical axis to said photosensitive surface.
  4. 【請求項4】請求項1乃至請求項3のいずれか1項に記載の投影露光装置を用いて露光する方法において、 前記原版を所定の露光光で照明する照明工程と、 前記投影光学系を介して前記原版のパターン像を前記基板の感光面に露光する露光工程とを含むことを特徴とする露光方法。 4. A method of exposure using the projection exposure apparatus according to any one of claims 1 to 3, an illumination step of illuminating the original with a predetermined exposure light, the projection optical system exposure method comprising an exposure step of exposing the pattern image of the original onto a photosensitive surface of the substrate through.
JP10239562A 1998-08-11 1998-08-11 Projection aligner and exposure method Pending JP2000058436A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10239562A JP2000058436A (en) 1998-08-11 1998-08-11 Projection aligner and exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10239562A JP2000058436A (en) 1998-08-11 1998-08-11 Projection aligner and exposure method

Publications (1)

Publication Number Publication Date
JP2000058436A true JP2000058436A (en) 2000-02-25

Family

ID=17046655

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10239562A Pending JP2000058436A (en) 1998-08-11 1998-08-11 Projection aligner and exposure method

Country Status (1)

Country Link
JP (1) JP2000058436A (en)

Cited By (283)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004053953A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
WO2004053956A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus, exposure method and method for manufacturing device
WO2004053957A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Surface position detection apparatus, exposure method, and device porducing method
WO2004053959A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Optical device and projection exposure apparatus using such optical device
WO2004053954A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
WO2004053958A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
WO2004053955A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure system and device producing method
JP2004207711A (en) * 2002-12-10 2004-07-22 Nikon Corp Exposure device, exposure method, and device manufacturing method
WO2004086470A1 (en) * 2003-03-25 2004-10-07 Nikon Corporation Exposure system and device production method
WO2004086468A1 (en) * 2003-02-26 2004-10-07 Nikon Corporation Exposure apparatus and method, and method of producing apparatus
WO2004112108A1 (en) * 2003-06-13 2004-12-23 Nikon Corporation Exposure method, substrate stage, exposure apparatus and method for manufacturing device
WO2005010962A1 (en) * 2003-07-28 2005-02-03 Nikon Corporation Exposure apparatus, device producing method, and exposure apparatus controlling method
WO2005031799A2 (en) 2003-09-29 2005-04-07 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
JP2005101488A (en) * 2002-12-10 2005-04-14 Nikon Corp Aligner, exposure method, and manufacturing method of device
WO2005076322A1 (en) * 2004-02-09 2005-08-18 Yoshihiko Okamoto Aligner and semiconductor device manufacturing method using the aligner
WO2005076323A1 (en) * 2004-02-10 2005-08-18 Nikon Corporation Aligner, device manufacturing method, maintenance method and aligning method
WO2005078777A1 (en) * 2004-02-18 2005-08-25 Nikon Corporation Drive method, exposure method, exposure device, and device manufacturing method
WO2005081067A1 (en) 2004-02-13 2005-09-01 Carl Zeiss Smt Ag Projection objective for a microlithographic projection exposure apparatus
WO2005081295A1 (en) * 2004-02-20 2005-09-01 Nikon Corporation Exposure method, exposure apparatus, exposure system and method for manufacturing device
JP2005268742A (en) * 2003-07-28 2005-09-29 Nikon Corp Exposure device and device manufacturing method, and controlling method of its exposure device
US6952253B2 (en) 2002-11-12 2005-10-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005106930A1 (en) * 2004-04-27 2005-11-10 Nikon Corporation Exposure method, exposure system, and method for fabricating device
WO2005124833A1 (en) * 2004-06-21 2005-12-29 Nikon Corporation Exposure device, exposure device member cleaning method, exposure device maintenance method, maintenance device, and device manufacturing method
JP2006023538A (en) * 2004-07-08 2006-01-26 Fuji Photo Film Co Ltd Protective film forming composition for liquid immersion exposure, and pattern forming method using the same
JP2006030603A (en) * 2004-07-16 2006-02-02 Fuji Photo Film Co Ltd Protective film forming composition for liquid immersion exposure, and pattern forming method using the same
EP1630616A2 (en) * 2004-08-27 2006-03-01 ASML Holding N.V. System for reducing movement induced disturbances in immersion lithography
US7009682B2 (en) 2002-11-18 2006-03-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7012673B2 (en) 2003-06-27 2006-03-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1645911A1 (en) * 2004-10-07 2006-04-12 ASML Netherlands BV Lithographic apparatus and device manufacturing method
EP1647865A1 (en) * 2004-10-18 2006-04-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006041083A1 (en) * 2004-10-13 2006-04-20 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
US7034917B2 (en) 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7038760B2 (en) 2003-06-30 2006-05-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006140459A (en) * 2004-10-13 2006-06-01 Nikon Corp Aligner, exposing method, and device manufacturing method
JP2006165502A (en) * 2004-06-21 2006-06-22 Nikon Corp Exposure apparatus, method of cleaning member thereof, maintenance method of exposure apparatus, maintenance device, and device manufacturing method
US7075616B2 (en) 2002-11-12 2006-07-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006190971A (en) * 2004-10-13 2006-07-20 Nikon Corp Exposure apparatus, exposure method, and device manufacturing method
US7081943B2 (en) 2002-11-12 2006-07-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR100609795B1 (en) 2003-06-19 2006-08-08 에이에스엠엘 홀딩 엔.브이. Immersion photolithography system and method using microchannel nozzles
US7110087B2 (en) 2003-06-30 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7110081B2 (en) 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7119874B2 (en) 2003-06-27 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006053751A3 (en) * 2004-11-18 2006-10-12 Zeiss Carl Smt Ag Projection lens system of a microlithographic projection exposure installation
US7133114B2 (en) 2004-09-20 2006-11-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7145630B2 (en) 2004-11-23 2006-12-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006332669A (en) * 2005-05-25 2006-12-07 Carl Zeiss Smt Ag Projection lens suitable for use together with different immersion liquid, and converting method and manufacturing method therefor
US7158211B2 (en) 2003-09-29 2007-01-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7161654B2 (en) 2004-12-02 2007-01-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7161663B2 (en) 2004-07-22 2007-01-09 Asml Netherlands B.V. Lithographic apparatus
JP2007005830A (en) * 2003-07-28 2007-01-11 Nikon Corp Exposure system, exposure method, and method for manufacturing device
US7175968B2 (en) 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US7184122B2 (en) 2003-07-24 2007-02-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1759248A1 (en) * 2004-06-04 2007-03-07 Carl Zeiss SMT AG Projection system with compensation of intensity variatons and compensation element therefor
US7193681B2 (en) 2003-09-29 2007-03-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7193232B2 (en) 2002-11-12 2007-03-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method with substrate measurement not through liquid
US7196770B2 (en) 2004-12-07 2007-03-27 Asml Netherlands B.V. Prewetting of substrate before immersion exposure
WO2007034838A1 (en) * 2005-09-21 2007-03-29 Nikon Corporation Exposure device, exposure method, and device fabrication method
US7199858B2 (en) 2002-11-12 2007-04-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7199939B2 (en) 2005-01-05 2007-04-03 Canon Kabushiki Kaisha Immersion optical system and optical apparatus having the same
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7224431B2 (en) 2005-02-22 2007-05-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7227619B2 (en) 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007157827A (en) * 2005-12-01 2007-06-21 Tokyo Ohka Kogyo Co Ltd Method for removing liquid and method for evaluating resist pattern using same
JP2007516613A (en) * 2003-12-15 2007-06-21 カール・ツアイス・エスエムテイ・アーゲー Objective lens as microlithography projection objective comprising at least one liquid lens
US7248334B2 (en) 2004-12-07 2007-07-24 Asml Netherlands B.V. Sensor shield
JP2007520893A (en) * 2004-02-03 2007-07-26 ロチェスター インスティテュート オブ テクノロジー Photolithography and system using a fluid
US7251013B2 (en) 2004-11-12 2007-07-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7291850B2 (en) 2005-04-08 2007-11-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7295283B2 (en) 2004-04-02 2007-11-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7304715B2 (en) 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7317507B2 (en) 2005-05-03 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7330238B2 (en) 2005-03-28 2008-02-12 Asml Netherlands, B.V. Lithographic apparatus, immersion projection apparatus and device manufacturing method
US7339650B2 (en) 2003-04-09 2008-03-04 Nikon Corporation Immersion lithography fluid control system that applies force to confine the immersion liquid
US7345742B2 (en) 2003-04-10 2008-03-18 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
US7352440B2 (en) 2004-12-10 2008-04-01 Asml Netherlands B.V. Substrate placement in immersion lithography
US7352435B2 (en) 2003-10-15 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7355674B2 (en) 2004-09-28 2008-04-08 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and computer program product
US7359030B2 (en) 2002-11-29 2008-04-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7365827B2 (en) 2004-12-08 2008-04-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7378025B2 (en) 2005-02-22 2008-05-27 Asml Netherlands B.V. Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method
US7379159B2 (en) 2004-05-03 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7379155B2 (en) 2004-10-18 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7397532B2 (en) 2003-04-10 2008-07-08 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
US7403261B2 (en) 2004-12-15 2008-07-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7405805B2 (en) 2004-12-28 2008-07-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7408652B2 (en) 2002-12-20 2008-08-05 Carl Zeiss Smt Ag Device and method for the optical measurement of an optical system by using an immersion fluid
US7411658B2 (en) 2005-10-06 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411654B2 (en) 2005-04-05 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411657B2 (en) 2004-11-17 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7414699B2 (en) 2004-11-12 2008-08-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7420194B2 (en) 2005-12-27 2008-09-02 Asml Netherlands B.V. Lithographic apparatus and substrate edge seal
US7423720B2 (en) 2004-11-12 2008-09-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2008219017A (en) * 2003-12-23 2008-09-18 Asml Netherlands Bv Lithographic apparatus, alignment apparatus, device manufacturing method, aligning method, and method of converting apparatus
US7428038B2 (en) 2005-02-28 2008-09-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid
US7433016B2 (en) 2005-05-03 2008-10-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7433015B2 (en) 2003-10-15 2008-10-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7433019B2 (en) 2003-07-09 2008-10-07 Nikon Corporation Exposure apparatus and device manufacturing method
US7443482B2 (en) 2003-04-11 2008-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
US7446850B2 (en) 2004-12-03 2008-11-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7450217B2 (en) 2005-01-12 2008-11-11 Asml Netherlands B.V. Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby
US7456929B2 (en) 2004-10-15 2008-11-25 Nikon Corporation Exposure apparatus and device manufacturing method
US7468779B2 (en) 2005-06-28 2008-12-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7474379B2 (en) 2005-06-28 2009-01-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7486381B2 (en) 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7491661B2 (en) 2004-12-28 2009-02-17 Asml Netherlands B.V. Device manufacturing method, top coat material and substrate
US7501220B2 (en) * 2003-01-31 2009-03-10 Tokyo Ohka Kogyo Co., Ltd. Resist composition
US7522261B2 (en) 2004-09-24 2009-04-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7524618B2 (en) 2004-03-24 2009-04-28 Kabushiki Kaisha Toshiba Resist pattern forming method, semiconductor apparatus using said method, and exposure apparatus thereof
US7528931B2 (en) 2004-12-20 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7532306B2 (en) 2003-05-30 2009-05-12 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus
US7535644B2 (en) 2005-08-12 2009-05-19 Asml Netherlands B.V. Lens element, lithographic apparatus, device manufacturing method, and device manufactured thereby
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7583357B2 (en) 2004-11-12 2009-09-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7623218B2 (en) 2004-11-24 2009-11-24 Carl Zeiss Smt Ag Method of manufacturing a miniaturized device
US7633073B2 (en) 2005-11-23 2009-12-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7652746B2 (en) 2005-06-21 2010-01-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7656501B2 (en) 2005-11-16 2010-02-02 Asml Netherlands B.V. Lithographic apparatus
US7670730B2 (en) 2004-12-30 2010-03-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7684010B2 (en) 2005-03-09 2010-03-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, seal structure, method of removing an object and a method of sealing
US7697111B2 (en) 2003-08-26 2010-04-13 Nikon Corporation Optical element and exposure apparatus
US7697110B2 (en) 2004-01-26 2010-04-13 Nikon Corporation Exposure apparatus and device manufacturing method
US7705962B2 (en) 2005-01-14 2010-04-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7705968B2 (en) 2005-03-18 2010-04-27 Nikon Corporation Plate member, substrate holding device, exposure apparatus and method, and device manufacturing method
JP2010098328A (en) * 2003-09-29 2010-04-30 Nikon Corp Exposure apparatus, method for exposure, and method for manufacturing device
US7719658B2 (en) 2004-02-13 2010-05-18 Carl Zeiss Smt Ag Imaging system for a microlithographical projection light system
US7733459B2 (en) 2003-08-29 2010-06-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7738074B2 (en) 2003-07-16 2010-06-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7751027B2 (en) 2005-06-21 2010-07-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7759631B2 (en) * 2008-01-22 2010-07-20 Nanosurf Ag Raster scanning microscope having transparent optical element with inner curved surface
KR100971440B1 (en) 2002-12-19 2010-07-21 코닌클리케 필립스 일렉트로닉스 엔.브이. Method and device for irradiating spots on a layer
US7773195B2 (en) 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
US7791709B2 (en) 2006-12-08 2010-09-07 Asml Netherlands B.V. Substrate support and lithographic process
US7804577B2 (en) 2005-11-16 2010-09-28 Asml Netherlands B.V. Lithographic apparatus
US7804576B2 (en) 2004-12-06 2010-09-28 Nikon Corporation Maintenance method, maintenance device, exposure apparatus, and device manufacturing method
US7803516B2 (en) 2005-11-21 2010-09-28 Nikon Corporation Exposure method, device manufacturing method using the same, exposure apparatus, and substrate processing method and apparatus
US7804574B2 (en) 2003-05-30 2010-09-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method using acidic liquid
US7812926B2 (en) 2005-08-31 2010-10-12 Nikon Corporation Optical element, exposure apparatus based on the use of the same, exposure method, and method for producing microdevice
US7817245B2 (en) 2003-09-29 2010-10-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7830611B2 (en) 2005-07-25 2010-11-09 Carl Zeiss Smt Ag Projection objective of a microlithographic projection exposure apparatus
US7834974B2 (en) 2005-06-28 2010-11-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7839483B2 (en) 2005-12-28 2010-11-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a control system
US7839485B2 (en) 2006-01-19 2010-11-23 Nikon Corporation Movable body drive method, movable body drive system, pattern formation method, pattern forming apparatus, exposure method, exposure apparatus, and device manufacturing method
US7864292B2 (en) 2005-11-16 2011-01-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7872730B2 (en) 2006-09-15 2011-01-18 Nikon Corporation Immersion exposure apparatus and immersion exposure method, and device manufacturing method
US7894040B2 (en) 2004-10-05 2011-02-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7898643B2 (en) 2003-06-27 2011-03-01 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
US7924416B2 (en) 2005-06-22 2011-04-12 Nikon Corporation Measurement apparatus, exposure apparatus, and device manufacturing method
US7932996B2 (en) 2003-10-28 2011-04-26 Nikon Corporation Exposure apparatus, exposure method, and device fabrication method
US7948604B2 (en) 2002-12-10 2011-05-24 Nikon Corporation Exposure apparatus and method for producing device
US7973910B2 (en) 2006-11-17 2011-07-05 Nikon Corporation Stage apparatus and exposure apparatus
US8013975B2 (en) 2006-12-01 2011-09-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8018573B2 (en) 2005-02-22 2011-09-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8023100B2 (en) 2004-02-20 2011-09-20 Nikon Corporation Exposure apparatus, supply method and recovery method, exposure method, and device producing method
US8035799B2 (en) 2004-12-09 2011-10-11 Nikon Corporation Exposure apparatus, exposure method, and device producing method
US8035797B2 (en) 2003-09-26 2011-10-11 Nikon Corporation Projection exposure apparatus, cleaning and maintenance methods of a projection exposure apparatus, and device manufacturing method
US8035800B2 (en) 2006-03-13 2011-10-11 Nikon Corporation Exposure apparatus, maintenance method, exposure method, and method for producing device
US8040490B2 (en) 2006-12-01 2011-10-18 Nikon Corporation Liquid immersion exposure apparatus, exposure method, and method for producing device
US8040489B2 (en) 2004-10-26 2011-10-18 Nikon Corporation Substrate processing method, exposure apparatus, and method for producing device by immersing substrate in second liquid before immersion exposure through first liquid
US8045135B2 (en) 2006-11-22 2011-10-25 Asml Netherlands B.V. Lithographic apparatus with a fluid combining unit and related device manufacturing method
US8045134B2 (en) 2006-03-13 2011-10-25 Asml Netherlands B.V. Lithographic apparatus, control system and device manufacturing method
US8054557B2 (en) 2005-06-14 2011-11-08 Carl Zeiss Smt Gmbh Lithography projection objective, and a method for correcting image defects of the same
US8054465B2 (en) 2004-11-18 2011-11-08 Nikon Corporation Position measurement method
US8054445B2 (en) 2005-08-16 2011-11-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8064039B2 (en) 2005-04-25 2011-11-22 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
US8064037B2 (en) 2003-08-21 2011-11-22 Nikon Corporation Immersion exposure apparatus and device manufacturing method with no liquid recovery during exposure
US8064044B2 (en) 2004-01-05 2011-11-22 Nikon Corporation Exposure apparatus, exposure method, and device producing method
US8070145B2 (en) 2005-08-26 2011-12-06 Nikon Corporation Holding unit, assembly system, sputtering unit, and processing method and processing unit
US8102512B2 (en) 2004-09-17 2012-01-24 Nikon Corporation Substrate holding device, exposure apparatus, and device manufacturing method
US8111374B2 (en) 2005-09-09 2012-02-07 Nikon Corporation Analysis method, exposure method, and device manufacturing method
US8134681B2 (en) 2006-02-17 2012-03-13 Nikon Corporation Adjustment method, substrate processing method, substrate processing apparatus, exposure apparatus, inspection apparatus, measurement and/or inspection system, processing apparatus, computer system, program and information recording medium
US8164736B2 (en) 2007-05-29 2012-04-24 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US8179517B2 (en) 2005-06-30 2012-05-15 Nikon Corporation Exposure apparatus and method, maintenance method for exposure apparatus, and device manufacturing method
US8203693B2 (en) 2005-04-19 2012-06-19 Asml Netherlands B.V. Liquid immersion lithography system comprising a tilted showerhead relative to a substrate
US8203697B2 (en) 2006-08-31 2012-06-19 Nikon Corporation Movable body drive method and system, pattern formation method and apparatus, exposure method and apparatus for driving movable body based on measurement value of encoder and information on flatness of scale, and device manufacturing method
US8208124B2 (en) 2003-08-29 2012-06-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8208123B2 (en) 2003-08-29 2012-06-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8208119B2 (en) 2004-02-04 2012-06-26 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8237915B2 (en) 2002-12-10 2012-08-07 Carl Zeiss Smt Gmbh Method for improving an optical imaging property of a projection objective of a microlithographic projection exposure apparatus
US8236467B2 (en) 2005-04-28 2012-08-07 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
US8248577B2 (en) 2005-05-03 2012-08-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8253921B2 (en) 2003-09-03 2012-08-28 Nikon Corporation Exposure apparatus and device fabricating method
US8294873B2 (en) 2004-11-11 2012-10-23 Nikon Corporation Exposure method, device manufacturing method, and substrate
US8325326B2 (en) 2004-06-07 2012-12-04 Nikon Corporation Stage unit, exposure apparatus, and exposure method
US8330939B2 (en) 2004-11-01 2012-12-11 Nikon Corporation Immersion exposure apparatus and device manufacturing method with a liquid recovery port provided on at least one of a first stage and second stage
US8368870B2 (en) 2004-06-21 2013-02-05 Nikon Corporation Exposure apparatus and device manufacturing method
US8373843B2 (en) 2004-06-10 2013-02-12 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8411271B2 (en) 2005-12-28 2013-04-02 Nikon Corporation Pattern forming method, pattern forming apparatus, and device manufacturing method
US8477283B2 (en) 2006-05-10 2013-07-02 Nikon Corporation Exposure apparatus and device manufacturing method
US8482716B2 (en) 2004-06-10 2013-07-09 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8488099B2 (en) 2004-04-19 2013-07-16 Nikon Corporation Exposure apparatus and device manufacturing method
US8508713B2 (en) 2004-06-10 2013-08-13 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8525971B2 (en) 2004-06-09 2013-09-03 Nikon Corporation Lithographic apparatus with cleaning of substrate table
JP2013191871A (en) * 2013-05-13 2013-09-26 Nikon Corp Cata-dioptric type projection optical system, exposure device, and exposure method
US20130271945A1 (en) 2004-02-06 2013-10-17 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US8570484B2 (en) 2006-08-30 2013-10-29 Nikon Corporation Immersion exposure apparatus, device manufacturing method, cleaning method, and cleaning member to remove foreign substance using liquid
US8629418B2 (en) * 2005-02-28 2014-01-14 Asml Netherlands B.V. Lithographic apparatus and sensor therefor
US8634053B2 (en) 2006-12-07 2014-01-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8638422B2 (en) 2005-03-18 2014-01-28 Nikon Corporation Exposure method, exposure apparatus, method for producing device, and method for evaluating exposure apparatus
US8654308B2 (en) 2004-07-12 2014-02-18 Nikon Corporation Method for determining exposure condition, exposure method, exposure apparatus, and method for manufacturing device
US8675174B2 (en) 2004-09-17 2014-03-18 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8698998B2 (en) 2004-06-21 2014-04-15 Nikon Corporation Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device
US8705008B2 (en) 2004-06-09 2014-04-22 Nikon Corporation Substrate holding unit, exposure apparatus having same, exposure method, method for producing device, and liquid repellant plate
US8717533B2 (en) 2004-06-10 2014-05-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8721803B2 (en) 2006-12-05 2014-05-13 Nikon Corporation Cleaning liquid, cleaning method, liquid generating apparatus, exposure apparatus, and device fabricating method
US8780326B2 (en) 2005-09-09 2014-07-15 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8797502B2 (en) 2003-09-29 2014-08-05 Nikon Corporation Exposure apparatus, exposure method, and method for producing device with electricity removal device by adding additive to liquid
JP2014160274A (en) * 2014-04-21 2014-09-04 Nikon Corp Projection optical system, exposure device, exposure method, and method of manufacturing the device
KR20140114461A (en) * 2004-06-10 2014-09-26 가부시키가이샤 니콘 Exposure apparatus, exposure method, and device producing method
JP2014194552A (en) * 2014-04-28 2014-10-09 Nikon Corp Cata-dioptric type projection optical system, exposure device, and exposure method
US8860922B2 (en) 2003-10-28 2014-10-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8859188B2 (en) 2005-02-10 2014-10-14 Asml Netherlands B.V. Immersion liquid, exposure apparatus, and exposure process
US8860923B2 (en) 2003-10-28 2014-10-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2014199461A (en) * 2004-07-14 2014-10-23 カール・ツァイス・エスエムティー・ゲーエムベーハー Catadioptric projection objective
US8891053B2 (en) 2008-09-10 2014-11-18 Asml Netherlands B.V. Lithographic apparatus, method of manufacturing an article for a lithographic apparatus and device manufacturing method
US8902401B2 (en) 2006-05-09 2014-12-02 Carl Zeiss Smt Gmbh Optical imaging device with thermal attenuation
US8908269B2 (en) 2004-01-14 2014-12-09 Carl Zeiss Smt Gmbh Immersion catadioptric projection objective having two intermediate images
KR101469405B1 (en) * 2003-04-10 2014-12-10 가부시키가이샤 니콘 Environmental system including vaccum scavange for an immersion lithography apparatus
US8913316B2 (en) 2004-05-17 2014-12-16 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
US8928856B2 (en) 2003-10-31 2015-01-06 Nikon Corporation Exposure apparatus and device fabrication method
US8937704B2 (en) 2003-07-31 2015-01-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a resistivity sensor
US8941811B2 (en) 2004-12-20 2015-01-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8947629B2 (en) 2007-05-04 2015-02-03 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US8947637B2 (en) 2003-08-29 2015-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8964164B2 (en) 2003-05-13 2015-02-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8964163B2 (en) 2003-07-28 2015-02-24 Asml Netherlands B.V. Immersion lithographic apparatus and device manufacturing method with a projection system having a part movable relative to another part
US9013672B2 (en) 2007-05-04 2015-04-21 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
KR101529844B1 (en) * 2003-06-19 2015-06-17 가부시키가이샤 니콘 Exposure device and device producing method
US9081295B2 (en) 2003-05-06 2015-07-14 Nikon Corporation Catadioptric projection optical system, exposure apparatus, and exposure method
US9097992B2 (en) 2004-08-19 2015-08-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9104117B2 (en) 2004-07-07 2015-08-11 Bob Streefkerk Lithographic apparatus having a liquid detection system
US9110389B2 (en) 2003-06-11 2015-08-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9134623B2 (en) 2003-11-14 2015-09-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9207543B2 (en) 2004-04-14 2015-12-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a groove to collect liquid
US9224632B2 (en) 2004-12-15 2015-12-29 Nikon Corporation Substrate holding apparatus, exposure apparatus, and device fabricating method
EP2960702A1 (en) * 2003-09-03 2015-12-30 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US9239524B2 (en) 2005-03-30 2016-01-19 Nikon Corporation Exposure condition determination method, exposure method, exposure apparatus, and device manufacturing method involving detection of the situation of a liquid immersion region
US9250537B2 (en) 2004-07-12 2016-02-02 Nikon Corporation Immersion exposure apparatus and method with detection of liquid on members of the apparatus
US9256136B2 (en) 2010-04-22 2016-02-09 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method involving gas supply
US9329060B2 (en) 2006-02-21 2016-05-03 Nikon Corporation Measuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure apparatus and method, and device manufacturing method
JP2016075931A (en) * 2015-11-30 2016-05-12 株式会社ニコン Exposure equipment, exposure method, and device production method
US9341954B2 (en) 2007-10-24 2016-05-17 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9377698B2 (en) 2006-09-01 2016-06-28 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method
US9423698B2 (en) 2003-10-28 2016-08-23 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
US9429495B2 (en) 2004-06-04 2016-08-30 Carl Zeiss Smt Gmbh System for measuring the image quality of an optical imaging system
US9436095B2 (en) 2004-01-20 2016-09-06 Carl Zeiss Smt Gmbh Exposure apparatus and measuring device for a projection lens
US9477158B2 (en) 2006-04-14 2016-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9500960B2 (en) 2003-04-11 2016-11-22 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US9500943B2 (en) 2003-05-06 2016-11-22 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US9507270B2 (en) 2004-06-16 2016-11-29 Asml Netherlands B.V. Vacuum system for immersion photolithography
US9623436B2 (en) 2004-05-18 2017-04-18 Asml Netherlands B.V. Active drying station and method to remove immersion liquid using gas flow supply with gas outlet between two gas inlets
US9632425B2 (en) 2006-12-07 2017-04-25 Asml Holding N.V. Lithographic apparatus, a dryer and a method of removing liquid from a surface
US9632431B2 (en) 2004-02-02 2017-04-25 Nikon Corporation Lithographic apparatus and method having substrate and sensor tables
CN106707699A (en) * 2003-07-28 2017-05-24 株式会社尼康 Exposure apparatus and device producing method
US9678437B2 (en) 2003-04-09 2017-06-13 Nikon Corporation Illumination optical apparatus having distribution changing member to change light amount and polarization member to set polarization in circumference direction
US9678332B2 (en) 2007-11-06 2017-06-13 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
CN106873316A (en) * 2003-02-26 2017-06-20 株式会社尼康 Exposure apparatus, exposure method, and method for producing device
US9690214B2 (en) 2006-02-21 2017-06-27 Nikon Corporation Pattern forming apparatus and pattern forming method, movable body drive system and movable body drive method, exposure apparatus and exposure method, and device manufacturing method
US9746781B2 (en) 2005-01-31 2017-08-29 Nikon Corporation Exposure apparatus and method for producing device
US9772478B2 (en) 2004-01-14 2017-09-26 Carl Zeiss Smt Gmbh Catadioptric projection objective with parallel, offset optical axes
US9798245B2 (en) 2003-12-15 2017-10-24 Nikon Corporation Exposure apparatus, and exposure method, with recovery device to recover liquid leaked from between substrate and member
US9857697B2 (en) 2006-02-21 2018-01-02 Nikon Corporation Pattern forming apparatus, mark detecting apparatus, exposure apparatus, pattern forming method, exposure method, and device manufacturing method
US9874822B2 (en) 2006-09-01 2018-01-23 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
US9885872B2 (en) 2003-11-20 2018-02-06 Nikon Corporation Illumination optical apparatus, exposure apparatus, and exposure method with optical integrator and polarization member that changes polarization state of light
US9891539B2 (en) 2005-05-12 2018-02-13 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US9933708B2 (en) 2003-05-23 2018-04-03 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US9939739B2 (en) 2003-05-23 2018-04-10 Nikon Corporation Exposure apparatus and method for producing device
US9958786B2 (en) 2003-04-11 2018-05-01 Nikon Corporation Cleanup method for optics in immersion lithography using object on wafer holder in place of wafer
US9958792B2 (en) 2006-08-31 2018-05-01 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
JP2018077519A (en) * 2018-01-09 2018-05-17 株式会社ニコン Exposure apparatus, exposure method and method for manufacturing device
US9977352B2 (en) 2003-07-09 2018-05-22 Nikon Corporation Exposure apparatus and device manufacturing method
US10061207B2 (en) 2005-12-02 2018-08-28 Asml Netherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US10067428B2 (en) 2006-08-31 2018-09-04 Nikon Corporation Movable body drive system and movable body drive method, pattern formation apparatus and method, exposure apparatus and method, device manufacturing method, and decision-making method
US10082739B2 (en) 2003-05-28 2018-09-25 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US10088760B2 (en) 2003-12-03 2018-10-02 Nikon Corporation Exposure apparatus, exposure method, method for producing device, and optical part
US10101666B2 (en) 2007-10-12 2018-10-16 Nikon Corporation Illumination optical apparatus, exposure apparatus, and device manufacturing method
US10126661B2 (en) 2004-03-25 2018-11-13 Nikon Corporation Exposure apparatus and device fabrication method
US10151983B2 (en) 2004-02-03 2018-12-11 Nikon Corporation Exposure apparatus and device manufacturing method
US10209623B2 (en) 2003-10-09 2019-02-19 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US10268127B2 (en) 2017-05-08 2019-04-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Cited By (715)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7932999B2 (en) 2002-11-12 2011-04-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9366972B2 (en) 2002-11-12 2016-06-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9360765B2 (en) 2002-11-12 2016-06-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9195153B2 (en) 2002-11-12 2015-11-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9740107B2 (en) 2002-11-12 2017-08-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7224436B2 (en) 2002-11-12 2007-05-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8446568B2 (en) 2002-11-12 2013-05-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9885965B2 (en) 2002-11-12 2018-02-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7193232B2 (en) 2002-11-12 2007-03-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method with substrate measurement not through liquid
US9097987B2 (en) 2002-11-12 2015-08-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9091940B2 (en) 2002-11-12 2015-07-28 Asml Netherlands B.V. Lithographic apparatus and method involving a fluid inlet and a fluid outlet
US8344341B2 (en) 2002-11-12 2013-01-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10261428B2 (en) 2002-11-12 2019-04-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9588442B2 (en) 2002-11-12 2017-03-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10222706B2 (en) 2002-11-12 2019-03-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7795603B2 (en) 2002-11-12 2010-09-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7199858B2 (en) 2002-11-12 2007-04-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7110081B2 (en) 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10191389B2 (en) 2002-11-12 2019-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7482611B2 (en) 2002-11-12 2009-01-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US6952253B2 (en) 2002-11-12 2005-10-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7081943B2 (en) 2002-11-12 2006-07-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7075616B2 (en) 2002-11-12 2006-07-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9057967B2 (en) 2002-11-12 2015-06-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2010135857A (en) * 2002-11-12 2010-06-17 Asml Netherlands Bv Lithography apparatus and method for fabricating device
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7009682B2 (en) 2002-11-18 2006-03-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7119881B2 (en) 2002-11-18 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7359030B2 (en) 2002-11-29 2008-04-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2004053957A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Surface position detection apparatus, exposure method, and device porducing method
WO2004053955A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure system and device producing method
US7505111B2 (en) 2002-12-10 2009-03-17 Nikon Corporation Exposure apparatus and device manufacturing method
US7948604B2 (en) 2002-12-10 2011-05-24 Nikon Corporation Exposure apparatus and method for producing device
US7466392B2 (en) 2002-12-10 2008-12-16 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
WO2004053959A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Optical device and projection exposure apparatus using such optical device
US7436486B2 (en) 2002-12-10 2008-10-14 Nikon Corporation Exposure apparatus and device manufacturing method
WO2004053954A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
US7515246B2 (en) 2002-12-10 2009-04-07 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP2009105471A (en) * 2002-12-10 2009-05-14 Nikon Corp Exposure apparatus and method of manufacturing device
US7589820B2 (en) 2002-12-10 2009-09-15 Nikon Corporation Exposure apparatus and method for producing device
US7379158B2 (en) 2002-12-10 2008-05-27 Nikon Corporation Exposure apparatus and method for producing device
US7876418B2 (en) 2002-12-10 2011-01-25 Nikon Corporation Optical element and projection exposure apparatus based on use of the optical element
JP4529433B2 (en) * 2002-12-10 2010-08-25 株式会社ニコン Exposure apparatus and an exposure method, a device manufacturing method
US7639343B2 (en) 2002-12-10 2009-12-29 Nikon Corporation Exposure apparatus and device manufacturing method
US8767173B2 (en) 2002-12-10 2014-07-01 Nikon Corporation Optical element and projection exposure apparatus based on use of the optical element
WO2004053953A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
JP2004207711A (en) * 2002-12-10 2004-07-22 Nikon Corp Exposure device, exposure method, and device manufacturing method
US7589821B2 (en) 2002-12-10 2009-09-15 Nikon Corporation Exposure apparatus and device manufacturing method
JP2009105472A (en) * 2002-12-10 2009-05-14 Nikon Corp Vacuum system, immersion exposure device and method for exposure, and method for manufacturing device
JP4596076B2 (en) * 2002-12-10 2010-12-08 株式会社ニコン Exposure apparatus, exposure method, and device manufacturing method
US7460207B2 (en) 2002-12-10 2008-12-02 Nikon Corporation Exposure apparatus and method for producing device
US7436487B2 (en) 2002-12-10 2008-10-14 Nikon Corporation Exposure apparatus and method for producing device
JP2005101488A (en) * 2002-12-10 2005-04-14 Nikon Corp Aligner, exposure method, and manufacturing method of device
US7446851B2 (en) 2002-12-10 2008-11-04 Nikon Corporation Exposure apparatus and device manufacturing method
US8237915B2 (en) 2002-12-10 2012-08-07 Carl Zeiss Smt Gmbh Method for improving an optical imaging property of a projection objective of a microlithographic projection exposure apparatus
JP4596077B2 (en) * 2002-12-10 2010-12-08 株式会社ニコン Vacuum system, an immersion exposure apparatus and an exposure method, a device manufacturing method
JP4595320B2 (en) * 2002-12-10 2010-12-08 株式会社ニコン Exposure apparatus, and device manufacturing method
WO2004053958A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
WO2004053956A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus, exposure method and method for manufacturing device
USRE46433E1 (en) 2002-12-19 2017-06-13 Asml Netherlands B.V. Method and device for irradiating spots on a layer
KR100971440B1 (en) 2002-12-19 2010-07-21 코닌클리케 필립스 일렉트로닉스 엔.브이. Method and device for irradiating spots on a layer
US7408652B2 (en) 2002-12-20 2008-08-05 Carl Zeiss Smt Ag Device and method for the optical measurement of an optical system by using an immersion fluid
US8198004B2 (en) 2003-01-31 2012-06-12 Tokyo Ohka Kogyo Co., Ltd. Resist composition
US7541138B2 (en) 2003-01-31 2009-06-02 Tokyo Ohka Kogyo Co., Ltd. Resist composition
US7501220B2 (en) * 2003-01-31 2009-03-10 Tokyo Ohka Kogyo Co., Ltd. Resist composition
US7527909B2 (en) 2003-01-31 2009-05-05 Tokyo Ohka Kogyo Co., Ltd. Resist composition
KR101169288B1 (en) 2003-02-26 2012-08-02 가부시키가이샤 니콘 Exposure apparatus and method, and method of manufacturing device
KR101288767B1 (en) 2003-02-26 2013-07-23 가부시키가이샤 니콘 Exposure apparatus and method, and method of producing apparatus
JP2010028127A (en) * 2003-02-26 2010-02-04 Nikon Corp Exposure apparatus, exposure method and device manufacturing method
WO2004086468A1 (en) * 2003-02-26 2004-10-07 Nikon Corporation Exposure apparatus and method, and method of producing apparatus
US7453550B2 (en) 2003-02-26 2008-11-18 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US9766555B2 (en) 2003-02-26 2017-09-19 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP2009302596A (en) * 2003-02-26 2009-12-24 Nikon Corp Exposure apparatus, exposure method, and method for manufacturing device
KR101643112B1 (en) 2003-02-26 2016-07-26 가부시키가이샤 니콘 Exposure apparatus and method, and method of producing apparatus
US7268854B2 (en) 2003-02-26 2007-09-11 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP2014112741A (en) * 2003-02-26 2014-06-19 Nikon Corp Exposure equipment, exposure method, and device manufacturing method
JP2015121825A (en) * 2003-02-26 2015-07-02 株式会社ニコン Exposure equipment, exposure method, and device manufacturing method
JP2012129565A (en) * 2003-02-26 2012-07-05 Nikon Corp Exposure equipment, exposure method, and device manufacturing method
CN106873316A (en) * 2003-02-26 2017-06-20 株式会社尼康 Exposure apparatus, exposure method, and method for producing device
KR101563453B1 (en) 2003-02-26 2015-10-26 가부시키가이샤 니콘 Exposure apparatus and method, and method of producing apparatus
US7535550B2 (en) 2003-02-26 2009-05-19 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
CN102495540A (en) * 2003-02-26 2012-06-13 株式会社尼康 Exposure apparatus, exposure method, and method for producing device
US7542128B2 (en) 2003-02-26 2009-06-02 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP2011023765A (en) * 2003-02-26 2011-02-03 Nikon Corp Exposure apparatus, exposure method, and method of producing device
KR101562447B1 (en) 2003-02-26 2015-10-21 가부시키가이샤 니콘 Exposure apparatus and method, and method of producing apparatus
KR20150052334A (en) * 2003-02-26 2015-05-13 가부시키가이샤 니콘 Exposure apparatus and method, and method of producing apparatus
JP2018106206A (en) * 2003-02-26 2018-07-05 株式会社ニコン Exposure apparatus, exposure method, and method for producing device
KR101442361B1 (en) * 2003-02-26 2014-09-23 가부시키가이샤 니콘 Exposure apparatus and method, and method of producing apparatus
KR101875296B1 (en) 2003-02-26 2018-07-05 가부시키가이샤 니콘 Exposure apparatus and method, and method of producing apparatus
JP2009147386A (en) * 2003-02-26 2009-07-02 Nikon Corp Exposure apparatus and method of producing device
JP4640516B2 (en) * 2003-02-26 2011-03-02 株式会社ニコン Exposure apparatus, and device manufacturing method
JP2017068287A (en) * 2003-02-26 2017-04-06 株式会社ニコン Exposure apparatus, exposure method, and method for producing device
JP2016075963A (en) * 2003-02-26 2016-05-12 株式会社ニコン Exposure apparatus, exposure method, and method for producing device
US10180632B2 (en) 2003-02-26 2019-01-15 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
WO2004086470A1 (en) * 2003-03-25 2004-10-07 Nikon Corporation Exposure system and device production method
JP2012080148A (en) * 2003-03-25 2012-04-19 Nikon Corp Exposure apparatus, and device manufacturing method
JP2011044736A (en) * 2003-03-25 2011-03-03 Nikon Corp Exposure apparatus, and device manufacturing method
JP2014030061A (en) * 2003-03-25 2014-02-13 Nikon Corp Exposure apparatus, and device manufacturing method
JP2009158977A (en) * 2003-03-25 2009-07-16 Nikon Corp Exposure apparatus and device fabrication method
US9618852B2 (en) 2003-04-09 2017-04-11 Nikon Corporation Immersion lithography fluid control system regulating flow velocity of gas based on position of gas outlets
US7339650B2 (en) 2003-04-09 2008-03-04 Nikon Corporation Immersion lithography fluid control system that applies force to confine the immersion liquid
US9885959B2 (en) 2003-04-09 2018-02-06 Nikon Corporation Illumination optical apparatus having deflecting member, lens, polarization member to set polarization in circumference direction, and optical integrator
US9678437B2 (en) 2003-04-09 2017-06-13 Nikon Corporation Illumination optical apparatus having distribution changing member to change light amount and polarization member to set polarization in circumference direction
US9977350B2 (en) 2003-04-10 2018-05-22 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
US7397532B2 (en) 2003-04-10 2008-07-08 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
US9658537B2 (en) 2003-04-10 2017-05-23 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
US9632427B2 (en) 2003-04-10 2017-04-25 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
US9910370B2 (en) 2003-04-10 2018-03-06 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
KR101469405B1 (en) * 2003-04-10 2014-12-10 가부시키가이샤 니콘 Environmental system including vaccum scavange for an immersion lithography apparatus
US7345742B2 (en) 2003-04-10 2008-03-18 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
US9785057B2 (en) 2003-04-11 2017-10-10 Nikon Corporation Liquid jet and recovery system for immersion lithography
US9946163B2 (en) 2003-04-11 2018-04-17 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US10185222B2 (en) 2003-04-11 2019-01-22 Nikon Corporation Liquid jet and recovery system for immersion lithography
US9500960B2 (en) 2003-04-11 2016-11-22 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US9958786B2 (en) 2003-04-11 2018-05-01 Nikon Corporation Cleanup method for optics in immersion lithography using object on wafer holder in place of wafer
US7443482B2 (en) 2003-04-11 2008-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
US9500943B2 (en) 2003-05-06 2016-11-22 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US9086635B2 (en) 2003-05-06 2015-07-21 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US9081295B2 (en) 2003-05-06 2015-07-14 Nikon Corporation Catadioptric projection optical system, exposure apparatus, and exposure method
US9846366B2 (en) 2003-05-06 2017-12-19 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US9933705B2 (en) 2003-05-06 2018-04-03 Nikon Corporation Reduction projection optical system, exposure apparatus, and exposure method
US10156792B2 (en) 2003-05-06 2018-12-18 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US9606443B2 (en) 2003-05-06 2017-03-28 Nikon Corporation Reducing immersion projection optical system
US9477160B2 (en) 2003-05-13 2016-10-25 Asml Netherland B.V. Lithographic apparatus and device manufacturing method
US8964164B2 (en) 2003-05-13 2015-02-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9798246B2 (en) 2003-05-13 2017-10-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9939739B2 (en) 2003-05-23 2018-04-10 Nikon Corporation Exposure apparatus and method for producing device
US9933708B2 (en) 2003-05-23 2018-04-03 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US9977336B2 (en) 2003-05-23 2018-05-22 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US10082739B2 (en) 2003-05-28 2018-09-25 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US7808611B2 (en) 2003-05-30 2010-10-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method using acidic liquid
US7532306B2 (en) 2003-05-30 2009-05-12 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus
US7570343B2 (en) 2003-05-30 2009-08-04 Carl Zeis Smt Ag Microlithographic projection exposure apparatus
US7804574B2 (en) 2003-05-30 2010-09-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method using acidic liquid
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9152058B2 (en) 2003-06-09 2015-10-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a member and a fluid opening
US10180629B2 (en) 2003-06-09 2019-01-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9541843B2 (en) 2003-06-09 2017-01-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a sensor detecting a radiation beam through liquid
US9081299B2 (en) 2003-06-09 2015-07-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving removal of liquid entering a gap
US9110389B2 (en) 2003-06-11 2015-08-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9964858B2 (en) 2003-06-11 2018-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2004112108A1 (en) * 2003-06-13 2004-12-23 Nikon Corporation Exposure method, substrate stage, exposure apparatus and method for manufacturing device
JP2013016839A (en) * 2003-06-13 2013-01-24 Nikon Corp Substrate stage, exposure device, and device manufacturing method
JP2012248892A (en) * 2003-06-13 2012-12-13 Nikon Corp Substrate stage, exposure device, and device manufacturing method
TWI607292B (en) * 2003-06-13 2017-12-01 Nikon Corp
JP2010010703A (en) * 2003-06-13 2010-01-14 Nikon Corp Substrate stage, exposure device, and device manufacturing method
US9846371B2 (en) 2003-06-13 2017-12-19 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
JP2010161381A (en) * 2003-06-13 2010-07-22 Nikon Corp Photolithography method, substrate stage, photolithography machine, and method of manufacturing device
KR100609795B1 (en) 2003-06-19 2006-08-08 에이에스엠엘 홀딩 엔.브이. Immersion photolithography system and method using microchannel nozzles
US10007188B2 (en) 2003-06-19 2018-06-26 Nikon Corporation Exposure apparatus and device manufacturing method
US8004649B2 (en) 2003-06-19 2011-08-23 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
US7411650B2 (en) 2003-06-19 2008-08-12 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
US9715178B2 (en) 2003-06-19 2017-07-25 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
US10191388B2 (en) 2003-06-19 2019-01-29 Nikon Corporation Exposure apparatus, and device manufacturing method
US9709899B2 (en) 2003-06-19 2017-07-18 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
KR101529844B1 (en) * 2003-06-19 2015-06-17 가부시키가이샤 니콘 Exposure device and device producing method
JP2017227915A (en) * 2003-06-19 2017-12-28 株式会社ニコン Exposure device, exposure method and device production method
US9810995B2 (en) 2003-06-19 2017-11-07 Nikon Corporation Exposure apparatus and device manufacturing method
US7119874B2 (en) 2003-06-27 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7012673B2 (en) 2003-06-27 2006-03-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7898643B2 (en) 2003-06-27 2011-03-01 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
USRE42741E1 (en) 2003-06-27 2011-09-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7038760B2 (en) 2003-06-30 2006-05-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7110087B2 (en) 2003-06-30 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9977352B2 (en) 2003-07-09 2018-05-22 Nikon Corporation Exposure apparatus and device manufacturing method
US7433019B2 (en) 2003-07-09 2008-10-07 Nikon Corporation Exposure apparatus and device manufacturing method
US8913223B2 (en) 2003-07-16 2014-12-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8711323B2 (en) 2003-07-16 2014-04-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9383655B2 (en) 2003-07-16 2016-07-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9733575B2 (en) 2003-07-16 2017-08-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7738074B2 (en) 2003-07-16 2010-06-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8823920B2 (en) 2003-07-16 2014-09-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10151989B2 (en) 2003-07-16 2018-12-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7557901B2 (en) 2003-07-24 2009-07-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9213247B2 (en) 2003-07-24 2015-12-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8711333B2 (en) 2003-07-24 2014-04-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10146143B2 (en) 2003-07-24 2018-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9594308B2 (en) 2003-07-24 2017-03-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9804509B2 (en) 2003-07-24 2017-10-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7184122B2 (en) 2003-07-24 2007-02-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2012151493A (en) * 2003-07-28 2012-08-09 Nikon Corp Exposure apparatus, method for manufacturing device, and method for controlling exposure apparatus
JP2010118689A (en) * 2003-07-28 2010-05-27 Nikon Corp Exposure apparatus, method for manufacturing device, and method for controlling exposure apparatus
JP2010118690A (en) * 2003-07-28 2010-05-27 Nikon Corp Exposure apparatus, method for manufacturing device, and method for controlling exposure apparatus
US8964163B2 (en) 2003-07-28 2015-02-24 Asml Netherlands B.V. Immersion lithographic apparatus and device manufacturing method with a projection system having a part movable relative to another part
CN106707699A (en) * 2003-07-28 2017-05-24 株式会社尼康 Exposure apparatus and device producing method
CN104122760A (en) * 2003-07-28 2014-10-29 株式会社尼康 Exposure apparatus and device producing method
JP4492239B2 (en) * 2003-07-28 2010-06-30 株式会社ニコン Exposure apparatus and device manufacturing method, and a control method for an exposure apparatus
JP4492600B2 (en) * 2003-07-28 2010-06-30 株式会社ニコン Exposure apparatus and an exposure method, and device manufacturing method
WO2005010962A1 (en) * 2003-07-28 2005-02-03 Nikon Corporation Exposure apparatus, device producing method, and exposure apparatus controlling method
JP2010109393A (en) * 2003-07-28 2010-05-13 Nikon Corp Exposure apparatus, method for manufacturing device, and method for controlling exposure apparatus
JP2010109392A (en) * 2003-07-28 2010-05-13 Nikon Corp Exposure apparatus, and method for manufacturing device
TWI633581B (en) * 2003-07-28 2018-08-21 尼康股份有限公司
CN104122760B (en) * 2003-07-28 2017-04-19 株式会社尼康 Exposure apparatus, device manufacturing method
US9639006B2 (en) 2003-07-28 2017-05-02 Asml Netherlands B.V. Lithographic projection apparatus and device manufacturing method
JP2007005830A (en) * 2003-07-28 2007-01-11 Nikon Corp Exposure system, exposure method, and method for manufacturing device
US7175968B2 (en) 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US9760026B2 (en) 2003-07-28 2017-09-12 Nikon Corporation Exposure apparatus, method for producing device, and method for controlling exposure apparatus
US10185232B2 (en) 2003-07-28 2019-01-22 Nikon Corporation Exposure apparatus, method for producing device, and method for controlling exposure apparatus
JP2005268742A (en) * 2003-07-28 2005-09-29 Nikon Corp Exposure device and device manufacturing method, and controlling method of its exposure device
KR101403117B1 (en) 2003-07-28 2014-06-03 가부시키가이샤 니콘 Exposure apparatus, device producing method, and exposure apparatus controlling method
US8937704B2 (en) 2003-07-31 2015-01-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a resistivity sensor
US9285686B2 (en) 2003-07-31 2016-03-15 Asml Netherlands B.V. Lithographic apparatus involving an immersion liquid supply system with an aperture
US10203608B2 (en) 2003-08-21 2019-02-12 Nikon Corporation Exposure apparatus and device manufacturing method having lower scanning speed to expose peripheral shot area
US10209622B2 (en) 2003-08-21 2019-02-19 Nikon Corporation Exposure method and device manufacturing method having lower scanning speed to expose peripheral shot area
US8064037B2 (en) 2003-08-21 2011-11-22 Nikon Corporation Immersion exposure apparatus and device manufacturing method with no liquid recovery during exposure
JP2018049295A (en) * 2003-08-21 2018-03-29 株式会社ニコン Exposure apparatus, and method of manufacturing device
US7697111B2 (en) 2003-08-26 2010-04-13 Nikon Corporation Optical element and exposure apparatus
US10175584B2 (en) 2003-08-26 2019-01-08 Nikon Corporation Optical element and exposure apparatus
US7733459B2 (en) 2003-08-29 2010-06-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9568841B2 (en) 2003-08-29 2017-02-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8208124B2 (en) 2003-08-29 2012-06-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8208123B2 (en) 2003-08-29 2012-06-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9316919B2 (en) 2003-08-29 2016-04-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9606448B2 (en) 2003-08-29 2017-03-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10025204B2 (en) 2003-08-29 2018-07-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10146142B2 (en) 2003-08-29 2018-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9442388B2 (en) 2003-08-29 2016-09-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8953144B2 (en) 2003-08-29 2015-02-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9581914B2 (en) 2003-08-29 2017-02-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8804097B2 (en) 2003-08-29 2014-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9025127B2 (en) 2003-08-29 2015-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8947637B2 (en) 2003-08-29 2015-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8253921B2 (en) 2003-09-03 2012-08-28 Nikon Corporation Exposure apparatus and device fabricating method
KR101748923B1 (en) 2003-09-03 2017-06-19 가부시키가이샤 니콘 Apparatus and method for providing fluid for immersion lithography
US10203610B2 (en) 2003-09-03 2019-02-12 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US9817319B2 (en) 2003-09-03 2017-11-14 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
EP2960702A1 (en) * 2003-09-03 2015-12-30 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US8035797B2 (en) 2003-09-26 2011-10-11 Nikon Corporation Projection exposure apparatus, cleaning and maintenance methods of a projection exposure apparatus, and device manufacturing method
US8724076B2 (en) 2003-09-26 2014-05-13 Nikon Corporation Projection exposure apparatus, cleaning and maintenance methods of a projection exposure apparatus, and device manufacturing method
EP2837969A1 (en) * 2003-09-29 2015-02-18 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7193681B2 (en) 2003-09-29 2007-03-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1670043A4 (en) * 2003-09-29 2008-07-30 Nikon Corp Exposure apparatus, exposure method, and device manufacturing method
EP3093711A3 (en) * 2003-09-29 2017-05-24 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8797502B2 (en) 2003-09-29 2014-08-05 Nikon Corporation Exposure apparatus, exposure method, and method for producing device with electricity removal device by adding additive to liquid
JP2010098328A (en) * 2003-09-29 2010-04-30 Nikon Corp Exposure apparatus, method for exposure, and method for manufacturing device
US8400615B2 (en) 2003-09-29 2013-03-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7817245B2 (en) 2003-09-29 2010-10-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005031799A2 (en) 2003-09-29 2005-04-07 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
TWI610342B (en) * 2003-09-29 2018-01-01
US10025194B2 (en) 2003-09-29 2018-07-17 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
EP3093710A3 (en) * 2003-09-29 2016-12-21 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7158211B2 (en) 2003-09-29 2007-01-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101323396B1 (en) 2003-09-29 2013-10-29 가부시키가이샤 니콘 Exposure apparatus, exposure method, and device manufacturing method
EP1670043A2 (en) * 2003-09-29 2006-06-14 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US10209623B2 (en) 2003-10-09 2019-02-19 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US9285685B2 (en) 2003-10-15 2016-03-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7433015B2 (en) 2003-10-15 2008-10-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8174674B2 (en) 2003-10-15 2012-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7352435B2 (en) 2003-10-15 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8570486B2 (en) 2003-10-15 2013-10-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7961293B2 (en) 2003-10-15 2011-06-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8711330B2 (en) 2003-10-15 2014-04-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8860922B2 (en) 2003-10-28 2014-10-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10248034B2 (en) 2003-10-28 2019-04-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8797506B2 (en) 2003-10-28 2014-08-05 Nikon Corporation Exposure apparatus, exposure method, and device fabrication method
US9423698B2 (en) 2003-10-28 2016-08-23 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
US9182679B2 (en) 2003-10-28 2015-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9482962B2 (en) 2003-10-28 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9760014B2 (en) 2003-10-28 2017-09-12 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
US7932996B2 (en) 2003-10-28 2011-04-26 Nikon Corporation Exposure apparatus, exposure method, and device fabrication method
US8860923B2 (en) 2003-10-28 2014-10-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8272544B2 (en) 2003-10-28 2012-09-25 Nikon Corporation Exposure apparatus, exposure method, and device fabrication method
US9829801B2 (en) 2003-10-31 2017-11-28 Nikon Corporation Exposure apparatus and device fabrication method
US10048597B2 (en) 2003-10-31 2018-08-14 Nikon Corporation Exposure apparatus and device fabrication method
US8928856B2 (en) 2003-10-31 2015-01-06 Nikon Corporation Exposure apparatus and device fabrication method
US9563133B2 (en) 2003-10-31 2017-02-07 Nikon Corporation Exposure apparatus and device fabrication method
US9134623B2 (en) 2003-11-14 2015-09-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9952515B2 (en) 2003-11-14 2018-04-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9134622B2 (en) 2003-11-14 2015-09-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9885872B2 (en) 2003-11-20 2018-02-06 Nikon Corporation Illumination optical apparatus, exposure apparatus, and exposure method with optical integrator and polarization member that changes polarization state of light
US8472006B2 (en) 2003-11-24 2013-06-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10088760B2 (en) 2003-12-03 2018-10-02 Nikon Corporation Exposure apparatus, exposure method, method for producing device, and optical part
US7385764B2 (en) 2003-12-15 2008-06-10 Carl Zeiss Smt Ag Objectives as a microlithography projection objective with at least one liquid lens
US9798245B2 (en) 2003-12-15 2017-10-24 Nikon Corporation Exposure apparatus, and exposure method, with recovery device to recover liquid leaked from between substrate and member
US7428105B2 (en) 2003-12-15 2008-09-23 Carl Zeiss Smt Ag Objectives as a microlithography projection objective with at least one liquid lens
JP2007516613A (en) * 2003-12-15 2007-06-21 カール・ツアイス・エスエムテイ・アーゲー Objective lens as microlithography projection objective comprising at least one liquid lens
US7474469B2 (en) 2003-12-15 2009-01-06 Carl Zeiss Smt Ag Arrangement of optical elements in a microlithographic projection exposure apparatus
US9817321B2 (en) 2003-12-23 2017-11-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9465301B2 (en) 2003-12-23 2016-10-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2008219017A (en) * 2003-12-23 2008-09-18 Asml Netherlands Bv Lithographic apparatus, alignment apparatus, device manufacturing method, aligning method, and method of converting apparatus
US9684250B2 (en) 2003-12-23 2017-06-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7589818B2 (en) 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
JP2011009753A (en) * 2003-12-23 2011-01-13 Asml Netherlands Bv Alignment apparatus
US20090296061A1 (en) * 2003-12-23 2009-12-03 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US8064044B2 (en) 2004-01-05 2011-11-22 Nikon Corporation Exposure apparatus, exposure method, and device producing method
US9588436B2 (en) 2004-01-05 2017-03-07 Nikon Corporation Exposure apparatus, exposure method, and device producing method
US9910369B2 (en) 2004-01-05 2018-03-06 Nikon Corporation Exposure apparatus, exposure method, and device producing method
US9772478B2 (en) 2004-01-14 2017-09-26 Carl Zeiss Smt Gmbh Catadioptric projection objective with parallel, offset optical axes
US8908269B2 (en) 2004-01-14 2014-12-09 Carl Zeiss Smt Gmbh Immersion catadioptric projection objective having two intermediate images
US9436095B2 (en) 2004-01-20 2016-09-06 Carl Zeiss Smt Gmbh Exposure apparatus and measuring device for a projection lens
US7697110B2 (en) 2004-01-26 2010-04-13 Nikon Corporation Exposure apparatus and device manufacturing method
US8330934B2 (en) 2004-01-26 2012-12-11 Nikon Corporation Exposure apparatus and device manufacturing method
US9684248B2 (en) 2004-02-02 2017-06-20 Nikon Corporation Lithographic apparatus having substrate table and sensor table to measure a patterned beam
US10139737B2 (en) 2004-02-02 2018-11-27 Nikon Corporation Lithographic apparatus and method having substrate and sensor tables
US10007196B2 (en) 2004-02-02 2018-06-26 Nikon Corporation Lithographic apparatus and method having substrate and sensor tables
US9632431B2 (en) 2004-02-02 2017-04-25 Nikon Corporation Lithographic apparatus and method having substrate and sensor tables
US9665016B2 (en) 2004-02-02 2017-05-30 Nikon Corporation Lithographic apparatus and method having substrate table and sensor table to hold immersion liquid
US10151983B2 (en) 2004-02-03 2018-12-11 Nikon Corporation Exposure apparatus and device manufacturing method
JP2007520893A (en) * 2004-02-03 2007-07-26 ロチェスター インスティテュート オブ テクノロジー Photolithography and system using a fluid
US8208119B2 (en) 2004-02-04 2012-06-26 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8605252B2 (en) 2004-02-04 2013-12-10 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US10048602B2 (en) 2004-02-04 2018-08-14 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US10241417B2 (en) 2004-02-06 2019-03-26 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US10007194B2 (en) 2004-02-06 2018-06-26 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US10234770B2 (en) 2004-02-06 2019-03-19 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US20130271945A1 (en) 2004-02-06 2013-10-17 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
JP2010153922A (en) * 2004-02-09 2010-07-08 Yoshihiko Okamoto Method of manufacturing semiconductor device
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JPWO2005076322A1 (en) * 2004-02-09 2008-02-21 好彦 岡本 Manufacturing method for an exposure apparatus and a semiconductor device using the same
JP4529141B2 (en) * 2004-02-09 2010-08-25 好彦 岡本 Manufacturing method for an exposure apparatus and a semiconductor device using the same
WO2005076322A1 (en) * 2004-02-09 2005-08-18 Yoshihiko Okamoto Aligner and semiconductor device manufacturing method using the aligner
JP4548341B2 (en) * 2004-02-10 2010-09-22 株式会社ニコン Exposure apparatus and device manufacturing method, maintenance method and exposure method
US8115902B2 (en) 2004-02-10 2012-02-14 Nikon Corporation Exposure apparatus, device manufacturing method, maintenance method, and exposure method
US7557900B2 (en) 2004-02-10 2009-07-07 Nikon Corporation Exposure apparatus, device manufacturing method, maintenance method, and exposure method
JPWO2005076323A1 (en) * 2004-02-10 2007-10-18 株式会社ニコン Exposure apparatus and device manufacturing method, maintenance method and exposure method
WO2005076323A1 (en) * 2004-02-10 2005-08-18 Nikon Corporation Aligner, device manufacturing method, maintenance method and aligning method
JP2007522508A (en) * 2004-02-13 2007-08-09 カール・ツアイス・エスエムテイ・アーゲー Projection objective for microlithographic projection exposure apparatus
WO2005081067A1 (en) 2004-02-13 2005-09-01 Carl Zeiss Smt Ag Projection objective for a microlithographic projection exposure apparatus
US7719658B2 (en) 2004-02-13 2010-05-18 Carl Zeiss Smt Ag Imaging system for a microlithographical projection light system
WO2005078777A1 (en) * 2004-02-18 2005-08-25 Nikon Corporation Drive method, exposure method, exposure device, and device manufacturing method
US8023100B2 (en) 2004-02-20 2011-09-20 Nikon Corporation Exposure apparatus, supply method and recovery method, exposure method, and device producing method
JP4974049B2 (en) * 2004-02-20 2012-07-11 株式会社ニコン Exposure method, an exposure apparatus, and device manufacturing method
TWI471900B (en) * 2004-02-20 2015-02-01 尼康股份有限公司
WO2005081295A1 (en) * 2004-02-20 2005-09-01 Nikon Corporation Exposure method, exposure apparatus, exposure system and method for manufacturing device
US7821616B2 (en) 2004-03-24 2010-10-26 Kabushiki Kaisha Toshiba Resist pattern forming method, semiconductor apparatus using said method, and exposure apparatus thereof
US7524618B2 (en) 2004-03-24 2009-04-28 Kabushiki Kaisha Toshiba Resist pattern forming method, semiconductor apparatus using said method, and exposure apparatus thereof
US10048593B2 (en) 2004-03-24 2018-08-14 Toshiba Memory Corporation Resist pattern forming method, semiconductor apparatus using said method, and exposure apparatus thereof
US10126661B2 (en) 2004-03-25 2018-11-13 Nikon Corporation Exposure apparatus and device fabrication method
US7034917B2 (en) 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7227619B2 (en) 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7295283B2 (en) 2004-04-02 2007-11-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9568840B2 (en) 2004-04-14 2017-02-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9829799B2 (en) 2004-04-14 2017-11-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10234768B2 (en) 2004-04-14 2019-03-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9989861B2 (en) 2004-04-14 2018-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9207543B2 (en) 2004-04-14 2015-12-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a groove to collect liquid
US9599907B2 (en) 2004-04-19 2017-03-21 Nikon Corporation Exposure apparatus and device manufacturing method
US8488099B2 (en) 2004-04-19 2013-07-16 Nikon Corporation Exposure apparatus and device manufacturing method
WO2005106930A1 (en) * 2004-04-27 2005-11-10 Nikon Corporation Exposure method, exposure system, and method for fabricating device
US7379159B2 (en) 2004-05-03 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7652751B2 (en) 2004-05-03 2010-01-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8913316B2 (en) 2004-05-17 2014-12-16 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
US9726979B2 (en) 2004-05-17 2017-08-08 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
US9134618B2 (en) 2004-05-17 2015-09-15 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
US9019596B2 (en) 2004-05-17 2015-04-28 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
US9623436B2 (en) 2004-05-18 2017-04-18 Asml Netherlands B.V. Active drying station and method to remove immersion liquid using gas flow supply with gas outlet between two gas inlets
US7486381B2 (en) 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4913041B2 (en) * 2004-06-04 2012-04-11 カール・ツァイス・エスエムティー・ゲーエムベーハー Projection system and the compensation element therefor involves compensation of intensity variation
JP2012028803A (en) * 2004-06-04 2012-02-09 Carl Zeiss Smt Gmbh Projection system with compensation of intensity variations and compensation element therefor
US9429495B2 (en) 2004-06-04 2016-08-30 Carl Zeiss Smt Gmbh System for measuring the image quality of an optical imaging system
JP2008502127A (en) * 2004-06-04 2008-01-24 カール・ツァイス・エスエムティー・アーゲー Projection system and the compensation element therefor involves compensation of intensity variation
EP1759248A1 (en) * 2004-06-04 2007-03-07 Carl Zeiss SMT AG Projection system with compensation of intensity variatons and compensation element therefor
US8325326B2 (en) 2004-06-07 2012-12-04 Nikon Corporation Stage unit, exposure apparatus, and exposure method
US8525971B2 (en) 2004-06-09 2013-09-03 Nikon Corporation Lithographic apparatus with cleaning of substrate table
US8704997B2 (en) 2004-06-09 2014-04-22 Nikon Corporation Immersion lithographic apparatus and method for rinsing immersion space before exposure
US8705008B2 (en) 2004-06-09 2014-04-22 Nikon Corporation Substrate holding unit, exposure apparatus having same, exposure method, method for producing device, and liquid repellant plate
US9645505B2 (en) 2004-06-09 2017-05-09 Nikon Corporation Immersion exposure apparatus and device manufacturing method with measuring device to measure specific resistance of liquid
US10203614B2 (en) 2004-06-10 2019-02-12 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP2013229632A (en) * 2004-06-10 2013-11-07 Nikon Corp Exposure apparatus, exposure method, and device manufacturing method
US8482716B2 (en) 2004-06-10 2013-07-09 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8508713B2 (en) 2004-06-10 2013-08-13 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
KR101639928B1 (en) 2004-06-10 2016-07-14 가부시키가이샤 니콘 Exposure apparatus, exposure method, and device producing method
US9778580B2 (en) 2004-06-10 2017-10-03 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US9411247B2 (en) 2004-06-10 2016-08-09 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP2016048395A (en) * 2004-06-10 2016-04-07 株式会社ニコン Exposure apparatus, exposure method, and device manufacturing method
US8717533B2 (en) 2004-06-10 2014-05-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8373843B2 (en) 2004-06-10 2013-02-12 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP2017037344A (en) * 2004-06-10 2017-02-16 株式会社ニコン Exposure apparatus, exposure method and device manufacturing method
JP2015128171A (en) * 2004-06-10 2015-07-09 株式会社ニコン Exposure apparatus, exposure method, and device manufacturing method
KR20140114461A (en) * 2004-06-10 2014-09-26 가부시키가이샤 니콘 Exposure apparatus, exposure method, and device producing method
US9529273B2 (en) 2004-06-10 2016-12-27 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US10168624B2 (en) 2004-06-16 2019-01-01 Asml Netherlands B.V. Vacuum system for immersion photolithography
US9507270B2 (en) 2004-06-16 2016-11-29 Asml Netherlands B.V. Vacuum system for immersion photolithography
US9857699B2 (en) 2004-06-16 2018-01-02 Asml Netherlands B.V. Vacuum system for immersion photolithography
KR101228244B1 (en) 2004-06-21 2013-01-31 가부시키가이샤 니콘 Exposure device, exposure device member cleaning method, exposure device maintenance method, maintenance device and device manufacturing method
KR101342303B1 (en) 2004-06-21 2013-12-16 가부시키가이샤 니콘 The exposure apparatus and the cleaning method of the member, the maintenance method of an exposure apparatus, a maintenance device, and a device manufacturing method
US9904182B2 (en) 2004-06-21 2018-02-27 Nikon Corporation Exposure apparatus
JP2006165502A (en) * 2004-06-21 2006-06-22 Nikon Corp Exposure apparatus, method of cleaning member thereof, maintenance method of exposure apparatus, maintenance device, and device manufacturing method
US9470984B2 (en) 2004-06-21 2016-10-18 Nikon Corporation Exposure apparatus
US8698998B2 (en) 2004-06-21 2014-04-15 Nikon Corporation Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device
WO2005124833A1 (en) * 2004-06-21 2005-12-29 Nikon Corporation Exposure device, exposure device member cleaning method, exposure device maintenance method, maintenance device, and device manufacturing method
US8810767B2 (en) 2004-06-21 2014-08-19 Nikon Corporation Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device
US8368870B2 (en) 2004-06-21 2013-02-05 Nikon Corporation Exposure apparatus and device manufacturing method
JP4677833B2 (en) * 2004-06-21 2011-04-27 株式会社ニコン The method of cleaning an exposure apparatus, and its members, the maintenance method for an exposure apparatus, maintenance equipment, and device manufacturing method
US9104117B2 (en) 2004-07-07 2015-08-11 Bob Streefkerk Lithographic apparatus having a liquid detection system
JP2006023538A (en) * 2004-07-08 2006-01-26 Fuji Photo Film Co Ltd Protective film forming composition for liquid immersion exposure, and pattern forming method using the same
JP4551704B2 (en) * 2004-07-08 2010-09-29 富士フイルム株式会社 Protective film-forming composition for immersion exposure and a pattern forming method using the same
US8654308B2 (en) 2004-07-12 2014-02-18 Nikon Corporation Method for determining exposure condition, exposure method, exposure apparatus, and method for manufacturing device
US9250537B2 (en) 2004-07-12 2016-02-02 Nikon Corporation Immersion exposure apparatus and method with detection of liquid on members of the apparatus
JP2016224460A (en) * 2004-07-14 2016-12-28 カール・ツァイス・エスエムティー・ゲーエムベーハー Catadioptric projection objective system
JP2014199461A (en) * 2004-07-14 2014-10-23 カール・ツァイス・エスエムティー・ゲーエムベーハー Catadioptric projection objective
JP2015121815A (en) * 2004-07-14 2015-07-02 カール・ツァイス・エスエムティー・ゲーエムベーハー Catadioptric projection objective
JP2016021076A (en) * 2004-07-14 2016-02-04 カール・ツァイス・エスエムティー・ゲーエムベーハー Catadioptric projection objective system
JP4551706B2 (en) * 2004-07-16 2010-09-29 富士フイルム株式会社 Protective film-forming composition for immersion exposure and a pattern forming method using the same
JP2006030603A (en) * 2004-07-16 2006-02-02 Fuji Photo Film Co Ltd Protective film forming composition for liquid immersion exposure, and pattern forming method using the same
US7161663B2 (en) 2004-07-22 2007-01-09 Asml Netherlands B.V. Lithographic apparatus
US10254663B2 (en) 2004-08-13 2019-04-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a heater
US9268242B2 (en) 2004-08-13 2016-02-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a heater and a temperature sensor
US7804575B2 (en) 2004-08-13 2010-09-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method having liquid evaporation control
US9188880B2 (en) 2004-08-13 2015-11-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a heater
US7304715B2 (en) 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9507278B2 (en) 2004-08-19 2016-11-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9746788B2 (en) 2004-08-19 2017-08-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9904185B2 (en) 2004-08-19 2018-02-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9488923B2 (en) 2004-08-19 2016-11-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9097992B2 (en) 2004-08-19 2015-08-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1630616A3 (en) * 2004-08-27 2007-10-31 ASML Holding N.V. System for reducing movement induced disturbances in immersion lithography
EP1630616A2 (en) * 2004-08-27 2006-03-01 ASML Holding N.V. System for reducing movement induced disturbances in immersion lithography
US9958785B2 (en) 2004-09-17 2018-05-01 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8675174B2 (en) 2004-09-17 2014-03-18 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US9341959B2 (en) 2004-09-17 2016-05-17 Nikon Corporation Substrate holding device, exposure apparatus, and device manufacturing method
US8102512B2 (en) 2004-09-17 2012-01-24 Nikon Corporation Substrate holding device, exposure apparatus, and device manufacturing method
US7133114B2 (en) 2004-09-20 2006-11-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8427629B2 (en) 2004-09-24 2013-04-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7808614B2 (en) 2004-09-24 2010-10-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7522261B2 (en) 2004-09-24 2009-04-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8068210B2 (en) 2004-09-28 2011-11-29 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and computer program product
US7355674B2 (en) 2004-09-28 2008-04-08 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and computer program product
US7894040B2 (en) 2004-10-05 2011-02-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8027026B2 (en) 2004-10-05 2011-09-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8755027B2 (en) 2004-10-05 2014-06-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving fluid mixing and control of the physical property of a fluid
EP1645911A1 (en) * 2004-10-07 2006-04-12 ASML Netherlands BV Lithographic apparatus and device manufacturing method
US7209213B2 (en) 2004-10-07 2007-04-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006190971A (en) * 2004-10-13 2006-07-20 Nikon Corp Exposure apparatus, exposure method, and device manufacturing method
JP2006140459A (en) * 2004-10-13 2006-06-01 Nikon Corp Aligner, exposing method, and device manufacturing method
WO2006041083A1 (en) * 2004-10-13 2006-04-20 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
US7852456B2 (en) 2004-10-13 2010-12-14 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8456609B2 (en) 2004-10-15 2013-06-04 Nikon Corporation Exposure apparatus and device manufacturing method
US7456929B2 (en) 2004-10-15 2008-11-25 Nikon Corporation Exposure apparatus and device manufacturing method
US9436097B2 (en) 2004-10-18 2016-09-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7119876B2 (en) 2004-10-18 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1647865A1 (en) * 2004-10-18 2006-04-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US10248033B2 (en) 2004-10-18 2019-04-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8004652B2 (en) 2004-10-18 2011-08-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8934082B2 (en) 2004-10-18 2015-01-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9753380B2 (en) 2004-10-18 2017-09-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7379155B2 (en) 2004-10-18 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8040489B2 (en) 2004-10-26 2011-10-18 Nikon Corporation Substrate processing method, exposure apparatus, and method for producing device by immersing substrate in second liquid before immersion exposure through first liquid
US8941808B2 (en) 2004-10-26 2015-01-27 Nikon Corporation Immersion lithographic apparatus rinsing outer contour of substrate with immersion space
US8330939B2 (en) 2004-11-01 2012-12-11 Nikon Corporation Immersion exposure apparatus and device manufacturing method with a liquid recovery port provided on at least one of a first stage and second stage
US9709900B2 (en) 2004-11-01 2017-07-18 Nikon Corporation Exposure apparatus and device fabricating method
US8922754B2 (en) 2004-11-01 2014-12-30 Nikon Corporation Immersion exposure apparatus and device fabricating method with two substrate stages and metrology station
US8294873B2 (en) 2004-11-11 2012-10-23 Nikon Corporation Exposure method, device manufacturing method, and substrate
US7852457B2 (en) 2004-11-12 2010-12-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9261797B2 (en) 2004-11-12 2016-02-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a liquid confinement structure
US7710537B2 (en) 2004-11-12 2010-05-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9645507B2 (en) 2004-11-12 2017-05-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9798247B2 (en) 2004-11-12 2017-10-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a liquid confinement structure
US7251013B2 (en) 2004-11-12 2007-07-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8817231B2 (en) 2004-11-12 2014-08-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a liquid confinement structure
US7423720B2 (en) 2004-11-12 2008-09-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7583357B2 (en) 2004-11-12 2009-09-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9964861B2 (en) 2004-11-12 2018-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a liquid confinement structure
US7414699B2 (en) 2004-11-12 2008-08-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411657B2 (en) 2004-11-17 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7978306B2 (en) 2004-11-17 2011-07-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9188882B2 (en) 2004-11-17 2015-11-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9581916B2 (en) 2004-11-17 2017-02-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7782440B2 (en) 2004-11-18 2010-08-24 Carl Zeiss Smt Ag Projection lens system of a microlithographic projection exposure installation
US8576379B2 (en) 2004-11-18 2013-11-05 Nikon Corporation Position measurement method, position control method, measurement method, loading method, exposure method and exposure apparatus, and device manufacturing method
US9298108B2 (en) 2004-11-18 2016-03-29 Nikon Corporation Position measurement method, position control method, measurement method, loading method, exposure method and exposure apparatus, and device manufacturing method
US8072578B2 (en) 2004-11-18 2011-12-06 Nikon Corporation Position measurement method, position control method, measurement method, loading method, exposure method and exposure apparatus, and device manufacturing method
US9164396B2 (en) 2004-11-18 2015-10-20 Carl Zeiss Smt Gmbh Projection lens system of a microlithographic projection exposure installation
US8054465B2 (en) 2004-11-18 2011-11-08 Nikon Corporation Position measurement method
US8059260B2 (en) 2004-11-18 2011-11-15 Nikon Corporation Position measurement method, position control method, measurement method, loading method, exposure method and exposure apparatus, and device manufacturing method
US9857692B2 (en) 2004-11-18 2018-01-02 Nikon Corporation Position measurement method, position control method, measurement method, loading method, exposure method and exposure apparatus, and device manufacturing method
US8319944B2 (en) 2004-11-18 2012-11-27 Carl Zeiss Smt Gmbh Projection lens system of a microlithographic projection exposure installation
US9348238B2 (en) 2004-11-18 2016-05-24 Niko Corporation Position measurement method, position control method, measurement method, loading method, exposure method and exposure apparatus, and device manufacturing method
US9223230B2 (en) 2004-11-18 2015-12-29 Nikon Corporation Position measurement method, position control method, measurement method, loading method, exposure method and exposure apparatus, and device manufacturing method
US9223231B2 (en) 2004-11-18 2015-12-29 Nikon Corporation Position measurement method, position control method, measurement method, loading method, exposure method and exposure apparatus, and device manufacturing method
JP2008521224A (en) * 2004-11-18 2008-06-19 カール・ツアイス・エスエムテイ・アーゲー Projection objective of a microlithographic projection exposure apparatus
WO2006053751A3 (en) * 2004-11-18 2006-10-12 Zeiss Carl Smt Ag Projection lens system of a microlithographic projection exposure installation
US10222708B2 (en) 2004-11-18 2019-03-05 Nikon Corporation Position measurement method, position control method, measurement method, loading method, exposure method and exposure apparatus, and device manufacturing method
US7145630B2 (en) 2004-11-23 2006-12-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7623218B2 (en) 2004-11-24 2009-11-24 Carl Zeiss Smt Ag Method of manufacturing a miniaturized device
US7812924B2 (en) 2004-12-02 2010-10-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7161654B2 (en) 2004-12-02 2007-01-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7446850B2 (en) 2004-12-03 2008-11-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7764356B2 (en) 2004-12-03 2010-07-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7804576B2 (en) 2004-12-06 2010-09-28 Nikon Corporation Maintenance method, maintenance device, exposure apparatus, and device manufacturing method
US8456608B2 (en) 2004-12-06 2013-06-04 Nikon Corporation Maintenance method, maintenance device, exposure apparatus, and device manufacturing method
US8891055B2 (en) 2004-12-06 2014-11-18 Nikon Corporation Maintenance method, maintenance device, exposure apparatus, and device manufacturing method
US7196770B2 (en) 2004-12-07 2007-03-27 Asml Netherlands B.V. Prewetting of substrate before immersion exposure
US7248334B2 (en) 2004-12-07 2007-07-24 Asml Netherlands B.V. Sensor shield
US7643127B2 (en) 2004-12-07 2010-01-05 Asml Netherlands B.V. Prewetting of substrate before immersion exposure
US8115905B2 (en) 2004-12-08 2012-02-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7365827B2 (en) 2004-12-08 2008-04-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8860926B2 (en) 2004-12-08 2014-10-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8035799B2 (en) 2004-12-09 2011-10-11 Nikon Corporation Exposure apparatus, exposure method, and device producing method
US8913224B2 (en) 2004-12-09 2014-12-16 Nixon Corporation Exposure apparatus, exposure method, and device producing method
US9740106B2 (en) 2004-12-10 2017-08-22 Asml Netherlands B.V. Substrate placement in immersion lithography
US7352440B2 (en) 2004-12-10 2008-04-01 Asml Netherlands B.V. Substrate placement in immersion lithography
US9182222B2 (en) 2004-12-10 2015-11-10 Asml Netherlands B.V. Substrate placement in immersion lithography
US7751032B2 (en) 2004-12-15 2010-07-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9224632B2 (en) 2004-12-15 2015-12-29 Nikon Corporation Substrate holding apparatus, exposure apparatus, and device fabricating method
US9690206B2 (en) 2004-12-15 2017-06-27 Nikon Corporation Substrate holding apparatus, exposure apparatus, and device fabricating method
US7403261B2 (en) 2004-12-15 2008-07-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8233135B2 (en) 2004-12-15 2012-07-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9964860B2 (en) 2004-12-15 2018-05-08 Nikon Corporation Substrate holding apparatus, exposure apparatus, and device fabricating method
US8941811B2 (en) 2004-12-20 2015-01-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9703210B2 (en) 2004-12-20 2017-07-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9116443B2 (en) 2004-12-20 2015-08-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8233137B2 (en) 2004-12-20 2012-07-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8462312B2 (en) 2004-12-20 2013-06-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10248035B2 (en) 2004-12-20 2019-04-02 Asml Netherlands B.V. Lithographic apparatus
US7528931B2 (en) 2004-12-20 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9835960B2 (en) 2004-12-20 2017-12-05 Asml Netherlands B.V. Lithographic apparatus
US9329494B2 (en) 2004-12-20 2016-05-03 Asml Netherlands B.V. Lithographic apparatus
US9417535B2 (en) 2004-12-20 2016-08-16 Asml Netherlands B.V. Lithographic apparatus
US8013978B2 (en) 2004-12-28 2011-09-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7491661B2 (en) 2004-12-28 2009-02-17 Asml Netherlands B.V. Device manufacturing method, top coat material and substrate
US7763355B2 (en) 2004-12-28 2010-07-27 Asml Netherlands B.V. Device manufacturing method, top coat material and substrate
US7405805B2 (en) 2004-12-28 2008-07-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8913225B2 (en) 2004-12-28 2014-12-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7670730B2 (en) 2004-12-30 2010-03-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8102507B2 (en) 2004-12-30 2012-01-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8354209B2 (en) 2004-12-30 2013-01-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7199939B2 (en) 2005-01-05 2007-04-03 Canon Kabushiki Kaisha Immersion optical system and optical apparatus having the same
US8542341B2 (en) 2005-01-12 2013-09-24 Asml Netherlands B.V. Exposure apparatus
US8830446B2 (en) 2005-01-12 2014-09-09 Asml Netherlands B.V. Exposure apparatus
US7450217B2 (en) 2005-01-12 2008-11-11 Asml Netherlands B.V. Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby
US7705962B2 (en) 2005-01-14 2010-04-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9746781B2 (en) 2005-01-31 2017-08-29 Nikon Corporation Exposure apparatus and method for producing device
US8859188B2 (en) 2005-02-10 2014-10-14 Asml Netherlands B.V. Immersion liquid, exposure apparatus, and exposure process
US9454088B2 (en) 2005-02-10 2016-09-27 Asml Netherlands B.V. Immersion liquid, exposure apparatus, and exposure process
US9164391B2 (en) 2005-02-10 2015-10-20 Asml Netherlands B.V. Immersion liquid, exposure apparatus, and exposure process
US9772565B2 (en) 2005-02-10 2017-09-26 Asml Netherlands B.V. Immersion liquid, exposure apparatus, and exposure process
US7914687B2 (en) 2005-02-22 2011-03-29 Asml Netherlands B.V. Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method
US8246838B2 (en) 2005-02-22 2012-08-21 Asml Netherlands B.V. Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method
US7378025B2 (en) 2005-02-22 2008-05-27 Asml Netherlands B.V. Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method
US8902404B2 (en) 2005-02-22 2014-12-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7224431B2 (en) 2005-02-22 2007-05-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8018573B2 (en) 2005-02-22 2011-09-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8107053B2 (en) 2005-02-28 2012-01-31 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid
US7428038B2 (en) 2005-02-28 2008-09-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid
US8958051B2 (en) 2005-02-28 2015-02-17 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid
US8629418B2 (en) * 2005-02-28 2014-01-14 Asml Netherlands B.V. Lithographic apparatus and sensor therefor
US8514369B2 (en) 2005-03-04 2013-08-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7843551B2 (en) 2005-03-04 2010-11-30 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9477159B2 (en) 2005-03-04 2016-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7684010B2 (en) 2005-03-09 2010-03-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, seal structure, method of removing an object and a method of sealing
US8390778B2 (en) 2005-03-09 2013-03-05 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, seal structure, method of removing an object and a method of sealing
US7705968B2 (en) 2005-03-18 2010-04-27 Nikon Corporation Plate member, substrate holding device, exposure apparatus and method, and device manufacturing method
US8638422B2 (en) 2005-03-18 2014-01-28 Nikon Corporation Exposure method, exposure apparatus, method for producing device, and method for evaluating exposure apparatus
US7859644B2 (en) 2005-03-28 2010-12-28 Asml Netherlands B.V. Lithographic apparatus, immersion projection apparatus and device manufacturing method
US7330238B2 (en) 2005-03-28 2008-02-12 Asml Netherlands, B.V. Lithographic apparatus, immersion projection apparatus and device manufacturing method
US9239524B2 (en) 2005-03-30 2016-01-19 Nikon Corporation Exposure condition determination method, exposure method, exposure apparatus, and device manufacturing method involving detection of the situation of a liquid immersion region
US10209629B2 (en) 2005-04-05 2019-02-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9429853B2 (en) 2005-04-05 2016-08-30 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411654B2 (en) 2005-04-05 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8988651B2 (en) 2005-04-05 2015-03-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8976334B2 (en) 2005-04-05 2015-03-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9857695B2 (en) 2005-04-05 2018-01-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8259287B2 (en) 2005-04-05 2012-09-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7582881B2 (en) 2005-04-08 2009-09-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7291850B2 (en) 2005-04-08 2007-11-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8203693B2 (en) 2005-04-19 2012-06-19 Asml Netherlands B.V. Liquid immersion lithography system comprising a tilted showerhead relative to a substrate
US8064039B2 (en) 2005-04-25 2011-11-22 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
US9618854B2 (en) 2005-04-25 2017-04-11 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
US9335639B2 (en) 2005-04-25 2016-05-10 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
US8236467B2 (en) 2005-04-28 2012-08-07 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
US8941812B2 (en) 2005-04-28 2015-01-27 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
US7433016B2 (en) 2005-05-03 2008-10-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8248577B2 (en) 2005-05-03 2012-08-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9229335B2 (en) 2005-05-03 2016-01-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9081300B2 (en) 2005-05-03 2015-07-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9146478B2 (en) 2005-05-03 2015-09-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9477153B2 (en) 2005-05-03 2016-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10025196B2 (en) 2005-05-03 2018-07-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8860924B2 (en) 2005-05-03 2014-10-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9606449B2 (en) 2005-05-03 2017-03-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7317507B2 (en) 2005-05-03 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9891539B2 (en) 2005-05-12 2018-02-13 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
JP2006332669A (en) * 2005-05-25 2006-12-07 Carl Zeiss Smt Ag Projection lens suitable for use together with different immersion liquid, and converting method and manufacturing method therefor
US8879159B2 (en) 2005-06-14 2014-11-04 Carl Zeiss Smt Gmbh Lithography projection objective, and a method for correcting image defects of the same
US9964859B2 (en) 2005-06-14 2018-05-08 Carl Zeiss Smt Gmbh Lithography projection objective, and a method for correcting image defects of the same
US8054557B2 (en) 2005-06-14 2011-11-08 Carl Zeiss Smt Gmbh Lithography projection objective, and a method for correcting image defects of the same
US9316922B2 (en) 2005-06-14 2016-04-19 Carl Zeiss Smt Gmbh Lithography projection objective, and a method for correcting image defects of the same
US9268236B2 (en) 2005-06-21 2016-02-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method having heat pipe with fluid to cool substrate and/or substrate holder
US7652746B2 (en) 2005-06-21 2010-01-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7751027B2 (en) 2005-06-21 2010-07-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7924416B2 (en) 2005-06-22 2011-04-12 Nikon Corporation Measurement apparatus, exposure apparatus, and device manufacturing method
US8120749B2 (en) 2005-06-28 2012-02-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7474379B2 (en) 2005-06-28 2009-01-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9766556B2 (en) 2005-06-28 2017-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8848165B2 (en) 2005-06-28 2014-09-30 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9099501B2 (en) 2005-06-28 2015-08-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7468779B2 (en) 2005-06-28 2008-12-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9448494B2 (en) 2005-06-28 2016-09-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7834974B2 (en) 2005-06-28 2010-11-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8687168B2 (en) 2005-06-28 2014-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9952514B2 (en) 2005-06-28 2018-04-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7929112B2 (en) 2005-06-28 2011-04-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8179517B2 (en) 2005-06-30 2012-05-15 Nikon Corporation Exposure apparatus and method, maintenance method for exposure apparatus, and device manufacturing method
US7990622B2 (en) 2005-07-25 2011-08-02 Carl Zeiss Smt Gmbh Projection objective of a microlithographic projection exposure apparatus
US7830611B2 (en) 2005-07-25 2010-11-09 Carl Zeiss Smt Ag Projection objective of a microlithographic projection exposure apparatus
US7535644B2 (en) 2005-08-12 2009-05-19 Asml Netherlands B.V. Lens element, lithographic apparatus, device manufacturing method, and device manufactured thereby
US8054445B2 (en) 2005-08-16 2011-11-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8070145B2 (en) 2005-08-26 2011-12-06 Nikon Corporation Holding unit, assembly system, sputtering unit, and processing method and processing unit
US8668191B2 (en) 2005-08-26 2014-03-11 Nikon Corporation Holding unit, assembly system, sputtering unit, and processing method and processing unit
US7812926B2 (en) 2005-08-31 2010-10-12 Nikon Corporation Optical element, exposure apparatus based on the use of the same, exposure method, and method for producing microdevice
US8724075B2 (en) 2005-08-31 2014-05-13 Nikon Corporation Optical element, exposure apparatus based on the use of the same, exposure method, and method for producing microdevice
US8780326B2 (en) 2005-09-09 2014-07-15 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8111374B2 (en) 2005-09-09 2012-02-07 Nikon Corporation Analysis method, exposure method, and device manufacturing method
JPWO2007034838A1 (en) * 2005-09-21 2009-03-26 株式会社ニコン Exposure apparatus and an exposure method, and device manufacturing method
WO2007034838A1 (en) * 2005-09-21 2007-03-29 Nikon Corporation Exposure device, exposure method, and device fabrication method
US8004654B2 (en) 2005-10-06 2011-08-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411658B2 (en) 2005-10-06 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8958054B2 (en) 2005-10-06 2015-02-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8421996B2 (en) 2005-11-16 2013-04-16 Asml Netherlands B.V. Lithographic apparatus
US7804577B2 (en) 2005-11-16 2010-09-28 Asml Netherlands B.V. Lithographic apparatus
US7656501B2 (en) 2005-11-16 2010-02-02 Asml Netherlands B.V. Lithographic apparatus
US9140996B2 (en) 2005-11-16 2015-09-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10126664B2 (en) 2005-11-16 2018-11-13 Asml Netherlands, B.V. Lithographic apparatus and device manufacturing method
US9618853B2 (en) 2005-11-16 2017-04-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8786823B2 (en) 2005-11-16 2014-07-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7864292B2 (en) 2005-11-16 2011-01-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7803516B2 (en) 2005-11-21 2010-09-28 Nikon Corporation Exposure method, device manufacturing method using the same, exposure apparatus, and substrate processing method and apparatus
US7633073B2 (en) 2005-11-23 2009-12-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7928407B2 (en) 2005-11-23 2011-04-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8138486B2 (en) * 2005-11-23 2012-03-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8456611B2 (en) 2005-11-29 2013-06-04 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
US7773195B2 (en) 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
JP2007157827A (en) * 2005-12-01 2007-06-21 Tokyo Ohka Kogyo Co Ltd Method for removing liquid and method for evaluating resist pattern using same
US10061207B2 (en) 2005-12-02 2018-08-28 Asml Netherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US7420194B2 (en) 2005-12-27 2008-09-02 Asml Netherlands B.V. Lithographic apparatus and substrate edge seal
US8232540B2 (en) 2005-12-27 2012-07-31 Asml Netherlands B.V. Lithographic apparatus and substrate edge seal
US8003968B2 (en) 2005-12-27 2011-08-23 Asml Netherlands B.V. Lithographic apparatus and substrate edge seal
US7839483B2 (en) 2005-12-28 2010-11-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a control system
US8564760B2 (en) 2005-12-28 2013-10-22 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a control system
US8411271B2 (en) 2005-12-28 2013-04-02 Nikon Corporation Pattern forming method, pattern forming apparatus, and device manufacturing method
US9851644B2 (en) 2005-12-30 2017-12-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9436096B2 (en) 2005-12-30 2016-09-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10222711B2 (en) 2005-12-30 2019-03-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8947631B2 (en) 2005-12-30 2015-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8743339B2 (en) 2005-12-30 2014-06-03 Asml Netherlands Lithographic apparatus and device manufacturing method
US8941810B2 (en) 2005-12-30 2015-01-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10185228B2 (en) 2006-01-19 2019-01-22 Nikon Corporation Movable body drive method, movable body drive system, pattern formation method, pattern forming apparatus, exposure method, exposure apparatus, and device manufacturing method
US7839485B2 (en) 2006-01-19 2010-11-23 Nikon Corporation Movable body drive method, movable body drive system, pattern formation method, pattern forming apparatus, exposure method, exposure apparatus, and device manufacturing method
US10185227B2 (en) 2006-01-19 2019-01-22 Nikon Corporation Movable body drive method, movable body drive system, pattern formation method, pattern forming apparatus, exposure method, exposure apparatus, and device manufacturing method
US10203613B2 (en) 2006-01-19 2019-02-12 Nikon Corporation Movable body drive method, movable body drive system, pattern formation method, pattern forming apparatus, exposure method, exposure apparatus, and device manufacturing method
US10133195B2 (en) 2006-01-19 2018-11-20 Nikon Corporation Movable body drive method, movable body drive system, pattern formation method, pattern forming apparatus, exposure method, exposure apparatus, and device manufacturing method
US8134681B2 (en) 2006-02-17 2012-03-13 Nikon Corporation Adjustment method, substrate processing method, substrate processing apparatus, exposure apparatus, inspection apparatus, measurement and/or inspection system, processing apparatus, computer system, program and information recording medium
US9857697B2 (en) 2006-02-21 2018-01-02 Nikon Corporation Pattern forming apparatus, mark detecting apparatus, exposure apparatus, pattern forming method, exposure method, and device manufacturing method
US9690214B2 (en) 2006-02-21 2017-06-27 Nikon Corporation Pattern forming apparatus and pattern forming method, movable body drive system and movable body drive method, exposure apparatus and exposure method, and device manufacturing method
US10139738B2 (en) 2006-02-21 2018-11-27 Nikon Corporation Pattern forming apparatus and pattern forming method, movable body drive system and movable body drive method, exposure apparatus and exposure method, and device manufacturing method
US10088343B2 (en) 2006-02-21 2018-10-02 Nikon Corporation Measuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure apparatus and method, and device manufacturing method
US10012913B2 (en) 2006-02-21 2018-07-03 Nikon Corporation Pattern forming apparatus and pattern forming method, movable body drive system and movable body drive method, exposure apparatus and exposure method, and device manufacturing method
US9329060B2 (en) 2006-02-21 2016-05-03 Nikon Corporation Measuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure apparatus and method, and device manufacturing method
US10234773B2 (en) 2006-02-21 2019-03-19 Nikon Corporation Pattern forming apparatus, mark detecting apparatus, exposure apparatus, pattern forming method, exposure method, and device manufacturing method
US9989859B2 (en) 2006-02-21 2018-06-05 Nikon Corporation Measuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure apparatus and method, and device manufacturing method
US10088759B2 (en) 2006-02-21 2018-10-02 Nikon Corporation Pattern forming apparatus and pattern forming method, movable body drive system and movable body drive method, exposure apparatus and exposure method, and device manufacturing method
US10132658B2 (en) 2006-02-21 2018-11-20 Nikon Corporation Measuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure apparatus and method, and device manufacturing method
US9482967B2 (en) 2006-03-13 2016-11-01 Asml Netherlands B.V. Lithographic apparatus, control system and device manufacturing method
US8045134B2 (en) 2006-03-13 2011-10-25 Asml Netherlands B.V. Lithographic apparatus, control system and device manufacturing method
US8035800B2 (en) 2006-03-13 2011-10-11 Nikon Corporation Exposure apparatus, maintenance method, exposure method, and method for producing device
US9477158B2 (en) 2006-04-14 2016-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9810996B2 (en) 2006-05-09 2017-11-07 Carl Zeiss Smt Gmbh Optical imaging device with thermal attenuation
US8902401B2 (en) 2006-05-09 2014-12-02 Carl Zeiss Smt Gmbh Optical imaging device with thermal attenuation
US8477283B2 (en) 2006-05-10 2013-07-02 Nikon Corporation Exposure apparatus and device manufacturing method
US8570484B2 (en) 2006-08-30 2013-10-29 Nikon Corporation Immersion exposure apparatus, device manufacturing method, cleaning method, and cleaning member to remove foreign substance using liquid
US10073359B2 (en) 2006-08-31 2018-09-11 Nikon Corporation Movable body drive system and movable body drive method, pattern formation apparatus and method, exposure apparatus and method, device manufacturing method, and decision-making method
US8203697B2 (en) 2006-08-31 2012-06-19 Nikon Corporation Movable body drive method and system, pattern formation method and apparatus, exposure method and apparatus for driving movable body based on measurement value of encoder and information on flatness of scale, and device manufacturing method
US10162274B2 (en) 2006-08-31 2018-12-25 Nikon Corporation Movable body drive method and system, pattern formation method and apparatus, exposure method and apparatus for driving movable body based on measurement value of encoder and information on flatness of scale, and device manufacturing method
US10101673B2 (en) 2006-08-31 2018-10-16 Nikon Corporation Movable body drive method and system, pattern formation method and apparatus, exposure method and apparatus for driving movable body based on measurement value of encoder and information on flatness of scale, and device manufacturing method
US8947639B2 (en) 2006-08-31 2015-02-03 Nikon Corporation Exposure method and apparatus measuring position of movable body based on information on flatness of encoder grating section
US10067428B2 (en) 2006-08-31 2018-09-04 Nikon Corporation Movable body drive system and movable body drive method, pattern formation apparatus and method, exposure apparatus and method, device manufacturing method, and decision-making method
US9958792B2 (en) 2006-08-31 2018-05-01 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
US8937710B2 (en) 2006-08-31 2015-01-20 Nikon Corporation Exposure method and apparatus compensating measuring error of encoder due to grating section and displacement of movable body in Z direction
US9983486B2 (en) 2006-08-31 2018-05-29 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
US9874822B2 (en) 2006-09-01 2018-01-23 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
US9377698B2 (en) 2006-09-01 2016-06-28 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method
US9846374B2 (en) 2006-09-01 2017-12-19 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method
US9740114B2 (en) 2006-09-01 2017-08-22 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method
US9971253B2 (en) 2006-09-01 2018-05-15 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method
US9625834B2 (en) 2006-09-01 2017-04-18 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method
US9760021B2 (en) 2006-09-01 2017-09-12 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method
US10197924B2 (en) 2006-09-01 2019-02-05 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method
US8743341B2 (en) 2006-09-15 2014-06-03 Nikon Corporation Immersion exposure apparatus and immersion exposure method, and device manufacturing method
US7872730B2 (en) 2006-09-15 2011-01-18 Nikon Corporation Immersion exposure apparatus and immersion exposure method, and device manufacturing method
US7973910B2 (en) 2006-11-17 2011-07-05 Nikon Corporation Stage apparatus and exposure apparatus
US8749755B2 (en) 2006-11-17 2014-06-10 Nikon Corporation Stage apparatus and exposure apparatus
US9330912B2 (en) 2006-11-22 2016-05-03 Asml Netherlands B.V. Lithographic apparatus, fluid combining unit and device manufacturing method
US8045135B2 (en) 2006-11-22 2011-10-25 Asml Netherlands B.V. Lithographic apparatus with a fluid combining unit and related device manufacturing method
US8013975B2 (en) 2006-12-01 2011-09-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8040490B2 (en) 2006-12-01 2011-10-18 Nikon Corporation Liquid immersion exposure apparatus, exposure method, and method for producing device
US8721803B2 (en) 2006-12-05 2014-05-13 Nikon Corporation Cleaning liquid, cleaning method, liquid generating apparatus, exposure apparatus, and device fabricating method
US8634053B2 (en) 2006-12-07 2014-01-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9645506B2 (en) 2006-12-07 2017-05-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10185231B2 (en) 2006-12-07 2019-01-22 Asml Holding N.V. Lithographic apparatus, a dryer and a method of removing liquid from a surface
US9632425B2 (en) 2006-12-07 2017-04-25 Asml Holding N.V. Lithographic apparatus, a dryer and a method of removing liquid from a surface
US7791709B2 (en) 2006-12-08 2010-09-07 Asml Netherlands B.V. Substrate support and lithographic process
US8947629B2 (en) 2007-05-04 2015-02-03 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US9013672B2 (en) 2007-05-04 2015-04-21 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US8164736B2 (en) 2007-05-29 2012-04-24 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US10101666B2 (en) 2007-10-12 2018-10-16 Nikon Corporation Illumination optical apparatus, exposure apparatus, and device manufacturing method
US9341954B2 (en) 2007-10-24 2016-05-17 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9857599B2 (en) 2007-10-24 2018-01-02 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9678332B2 (en) 2007-11-06 2017-06-13 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
US7759631B2 (en) * 2008-01-22 2010-07-20 Nanosurf Ag Raster scanning microscope having transparent optical element with inner curved surface
US8891053B2 (en) 2008-09-10 2014-11-18 Asml Netherlands B.V. Lithographic apparatus, method of manufacturing an article for a lithographic apparatus and device manufacturing method
US10209624B2 (en) 2010-04-22 2019-02-19 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method
US9256136B2 (en) 2010-04-22 2016-02-09 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method involving gas supply
US9846372B2 (en) 2010-04-22 2017-12-19 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method
JP2013191871A (en) * 2013-05-13 2013-09-26 Nikon Corp Cata-dioptric type projection optical system, exposure device, and exposure method
JP2014160274A (en) * 2014-04-21 2014-09-04 Nikon Corp Projection optical system, exposure device, exposure method, and method of manufacturing the device
JP2014194552A (en) * 2014-04-28 2014-10-09 Nikon Corp Cata-dioptric type projection optical system, exposure device, and exposure method
JP2016075931A (en) * 2015-11-30 2016-05-12 株式会社ニコン Exposure equipment, exposure method, and device production method
JP2017076138A (en) * 2015-11-30 2017-04-20 株式会社ニコン Exposure apparatus, exposure method and method for manufacturing device
US10268127B2 (en) 2017-05-08 2019-04-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2018077519A (en) * 2018-01-09 2018-05-17 株式会社ニコン Exposure apparatus, exposure method and method for manufacturing device
US10274832B2 (en) 2018-05-04 2019-04-30 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a liquid confinement structure

Similar Documents

Publication Publication Date Title
US5767949A (en) Exposure apparatus and method
US6563568B2 (en) Multiple image reticle for forming layers
US6259508B1 (en) Projection optical system and exposure apparatus and method
US6639734B2 (en) Catadioptric imaging system and a projection exposure apparatus provided with said imaging system
JP3041939B2 (en) Projection lens system
US5241423A (en) High resolution reduction catadioptric relay lens
US5089913A (en) High resolution reduction catadioptric relay lens
US6992750B2 (en) Exposure apparatus and method
US5707501A (en) Filter manufacturing apparatus
US4977426A (en) Projection exposure apparatus
EP0736789B1 (en) Catadioptric optical system and exposure apparatus having the same
JP4309980B2 (en) Annular surface reduction projection optical system
CA1095760A (en) Achromatic unit magnification optical system
US20040057034A1 (en) Exposure apparatus including micro mirror array and exposure method using the same
US6213610B1 (en) Catoptric reduction projection optical system and exposure apparatus and method using same
EP0507487B1 (en) Optical projection exposure method and system using the same
JP3167095B2 (en) Lighting apparatus and an exposure apparatus or a microscope apparatus having the same, and device production method
US5715089A (en) Exposure method and apparatus therefor
US5159496A (en) Lens system with four meniscus lenses made of anomalous dispersion glass
US6004699A (en) Photomask used for projection exposure with phase shifted auxiliary pattern
JP2698521B2 (en) Catadioptric optical system and a projection exposure apparatus including an optical system
US20030038931A1 (en) Illumination optical apparatus, exposure apparatus and method of exposure
EP0823662A2 (en) Projection exposure apparatus
KR100822881B1 (en) Diffraction spectral filter for use in extreme-uv lithography condenser
US6641959B2 (en) Absorberless phase-shifting mask for EUV

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050707

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070109

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080318

RD05 Notification of revocation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7425

Effective date: 20080423

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20080806