JP2000058436A - Projection aligner and exposure method - Google Patents
Projection aligner and exposure methodInfo
- Publication number
- JP2000058436A JP2000058436A JP10239562A JP23956298A JP2000058436A JP 2000058436 A JP2000058436 A JP 2000058436A JP 10239562 A JP10239562 A JP 10239562A JP 23956298 A JP23956298 A JP 23956298A JP 2000058436 A JP2000058436 A JP 2000058436A
- Authority
- JP
- Japan
- Prior art keywords
- optical system
- lens
- projection
- auxiliary lens
- projection optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
Abstract
PROBLEM TO BE SOLVED: To provide a projection aligner and method for reducing the change of image forming performance at an image forming position and in the neighborhood of an optical axis in a projection optical system, even when this projection optical system is used in an immersion state compared with the case that the projection optical system is used in a normal state. SOLUTION: This projection aligner is provided with a projection optical system 2 for transferring a pattern 1a plotted on an original art 1 to a photosensitive face 5a of a substrate 5. An auxiliary lens 4 is arranged so as to be inserted into and pulled out of a space between the lens face at the substrate 5 side of the projection optical system 2 and the photosensitive face 5a, and a space between the lower face of the auxiliary lens 4 and the photosensitive face 5a is formed to be immersion possible. Also, a curvature radius R1 of the lens face at the original art 1 side of the auxiliary lens 4 is formed, so as to be almost equal to a distance d1 on an optical axis Z from the lens face at the original art 1 side to the photosensitive face 5a.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、原版上に描画され
たパターンを基板上に焼付転写する投影光学系を有する
投影露光装置及び露光方法に関する。The present invention relates to a projection exposure apparatus having a projection optical system for printing and transferring a pattern drawn on an original onto a substrate, and an exposure method.
【０００２】[0002]
【従来の技術】近年、感光性基板としてのウエハに転写
されるパターンの微細化が望まれている。これを達成す
るためには、露光波長の短波長化を図るか、投影光学系
の開口数の増大化を図るかの２つの方法が考えられる。
従来より、これらのうち投影光学系の開口数の増大化を
図る方法として、液浸式の投影露光装置が提案されてい
る。液浸式の投影露光装置は、投影光学系の最もウエハ
側のレンズ面と、ウエハとの空間、すなわち、作動距離
（ワーキングディスタンス）の空間（以後、作動空間と
呼ぶ。）の全部又はウエハ側の部分空間を、油等の液体
で満たす装置である。通常使用時の作動空間を占める空
気の屈折率が１．０であるのに対して、例えば、油の屈
折率は約１．６である。このため、作動空間の全部又は
ウエハ側の部分空間を、このように屈折率の高い液体に
置換すれば、投影光学系のウエハ側の開口数を大きく
し、露光パターンの微細化を図ることができる。2. Description of the Related Art In recent years, miniaturization of a pattern transferred to a wafer as a photosensitive substrate has been desired. In order to achieve this, there are two methods of reducing the exposure wavelength and increasing the numerical aperture of the projection optical system.
Conventionally, among these methods, a liquid immersion type projection exposure apparatus has been proposed as a method of increasing the numerical aperture of a projection optical system. In an immersion type projection exposure apparatus, a space between the lens surface of the projection optical system closest to the wafer and the wafer, that is, the entire working distance (working distance) (hereinafter referred to as the working space) or the wafer side. Is a device for filling the subspace with a liquid such as oil. For example, the refractive index of air occupying the working space in normal use is 1.0, whereas the refractive index of oil is, for example, about 1.6. Therefore, if the entire working space or the partial space on the wafer side is replaced with such a liquid having a high refractive index, the numerical aperture on the wafer side of the projection optical system can be increased, and the exposure pattern can be miniaturized. it can.
【０００３】[0003]
【発明が解決しようとする課題】上記従来の液浸式の投
影露光装置においては、作動空間を空気等の気体とする
通常使用時と、パターンの微細化を図り作動空間の全部
又はウエハ側の部分空間を液体とする液浸使用時とで、
同等の結像性能を確保できなかった。例えば、作動空間
のウエハ側部分空間を液体とする液浸時の使用方法とし
て、平行平板ガラスを気体と液体の境界に設置する場合
を考える。このような場合、以下の３つの不具合が発生
する。In the conventional liquid immersion type projection exposure apparatus, the working space is usually used with a gas such as air, and the entire working space or the wafer side is reduced by miniaturizing the pattern. When using liquid immersion with a partial space as a liquid,
Equivalent imaging performance could not be secured. For example, as a usage method during liquid immersion in which the wafer-side partial space of the working space is liquid, consider a case where a parallel plate glass is installed at the boundary between gas and liquid. In such a case, the following three problems occur.
【０００４】１つめは、液浸使用時、平行平板ガラスの
入射面での光の屈折によって、投影光学系による結像位
置がずれる不具合である。そのため、焦点距離を確保す
るように、投影光学系又はウエハを移動させる必要があ
る。そして、その液浸使用時の条件によっては、結像位
置をウエハ上に合わせられなくなる場合がある。２つめ
は、液浸使用時に気体と液体の境界に設置される平行平
板ガラスによって、球面収差が生じる不具合である。こ
れによって、液浸使用時には結像性能が悪くなる。３つ
めは、環境変動により液浸使用時の結像性能や結像位置
の変化が大きくなる不具合である。すなわち、液体の屈
折率は、気体の屈折率に比べて、温度変化等の環境変動
によって大きく変化するため、結像性能や結像位置が安
定しない。したがって本発明は、投影光学系を液浸状態
で使用した場合でも、通常状態で使用した場合と比べ
て、投影光学系による結像位置と、光軸付近の結像性能
の変化の少ない投影露光装置及び露光方法を提供するこ
とを課題とする。The first problem is that when using liquid immersion, the position of the image formed by the projection optical system shifts due to refraction of light on the incident surface of the parallel plate glass. Therefore, it is necessary to move the projection optical system or the wafer so as to secure the focal length. Then, depending on the conditions at the time of using the liquid immersion, the imaging position may not be able to be adjusted on the wafer. The second problem is that a spherical aberration is caused by the parallel flat glass placed at the boundary between the gas and the liquid when the liquid immersion is used. As a result, the imaging performance is deteriorated when using the liquid immersion. Third, there is a problem that a change in imaging performance and an imaging position at the time of using the liquid immersion becomes large due to environmental fluctuation. That is, since the refractive index of the liquid changes significantly due to environmental changes such as temperature changes as compared with the refractive index of the gas, the imaging performance and the imaging position are not stable. Therefore, the present invention provides a projection exposure system in which, even when the projection optical system is used in the liquid immersion state, the imaging position by the projection optical system and the imaging performance near the optical axis are less changed than when the projection optical system is used in the normal state. It is an object to provide an apparatus and an exposure method.
【０００５】[0005]
【課題を解決するための手段】本発明は上記課題を解決
するためになされたものであり、すなわち、添付図面の
図１及び図２に付した符号をカッコ内に付記すると、本
発明は、原版（１）上に描画されたパターン（１ａ）を
基板（５）の感光面（５ａ）に転写する投影光学系
（２）を有する投影露光装置において、投影光学系
（２）の最も基板（５）側のレンズ面と感光面（５ａ）
との空間に、補助レンズ（４）が挿脱可能に配置され、
補助レンズ（４）の下面と感光面（５ａ）との空間は、
液浸可能に形成され、補助レンズ（４）の原版（１）側
レンズ面の曲率半径（Ｒ1）は、原版（１）側レンズ面
から感光面（５ａ）までの光軸（Ｚ）上の距離（ｄ1）
にほぼ等しくなるように形成されたことを特徴とする投
影露光装置である。その際、更に添付図面の図３に付し
た符号をカッコ内に付記すると、補助レンズ（４）の基
板（５）側レンズ面の曲率半径（Ｒ2）は、基板（５）
側レンズ面から感光面（５ａ）までの光軸（Ｚ）上の距
離（ｄ2）にほぼ等しくなるように形成されることが好
ましい。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problem. That is, when the reference numerals in FIG. 1 and FIG. In a projection exposure apparatus having a projection optical system (2) for transferring a pattern (1a) drawn on an original (1) to a photosensitive surface (5a) of a substrate (5), 5) Side lens surface and photosensitive surface (5a)
Auxiliary lens (4) is removably arranged in the space with
The space between the lower surface of the auxiliary lens (4) and the photosensitive surface (5a)
The radius of curvature (R 1 ) of the lens surface on the master (1) side of the auxiliary lens (4) is formed on the optical axis (Z) from the lens surface on the master (1) side to the photosensitive surface (5a). Distance (d 1 )
The projection exposure apparatus is formed so as to be substantially equal to the following. At this time, if the reference numerals given in FIG. 3 of the attached drawings are further added in parentheses, the radius of curvature (R 2 ) of the lens surface on the substrate (5) side of the auxiliary lens (4) is
It is preferable that the distance between the side lens surface and the photosensitive surface (5a) be substantially equal to the distance (d 2 ) on the optical axis (Z).
【０００６】また本発明は、添付図面の図１及び図４に
付した符号をカッコ内に付記すると、原版（１）上に描
画されたパターン（１ａ）を基板（５）の感光面（５
ａ）に転写する投影光学系（２）を有する投影露光装置
において、投影光学系（２）の最も基板（５）側のレン
ズ面の曲率半径（Ｒ2）は、基板（５）側のレンズ面か
ら感光面（５ａ）までの光軸（Ｚ）上の距離（ｄ2）に
ほぼ等しくなるように形成されたことを特徴とする投影
露光装置である。また本発明は、添付図面の図１に付し
た符号をカッコ内に付記すると、上述の構成の投影露光
装置を用いて露光する方法において、原版（１）を所定
の露光光で照明する照明工程と、投影光学系（２）を介
して原版（１）のパターン像（１ａ）を基板（５）の感
光面（５ａ）に露光する露光工程とを含むことを特徴と
する露光方法である。Further, according to the present invention, when the reference numerals given in FIGS. 1 and 4 of the accompanying drawings are added in parentheses, the pattern (1a) drawn on the original (1) is used for the photosensitive surface (5) of the substrate (5).
a) In a projection exposure apparatus having a projection optical system (2) for transferring to the substrate (5), the radius of curvature (R 2 ) of the lens surface closest to the substrate (5) of the projection optical system ( 2 ) is set to a projection exposure apparatus characterized in that it is formed to be substantially equal to the distance (d 2) on the optical axis (Z) from the surface to the photosensitive surface (5a). Further, according to the present invention, in the method of exposing using the projection exposure apparatus having the above-described configuration, the illumination step of illuminating the original (1) with predetermined exposure light is described with the reference numerals in parentheses in FIG. And an exposure step of exposing the pattern image (1a) of the original (1) to the photosensitive surface (5a) of the substrate (5) via the projection optical system (2).
【０００７】[0007]
【発明の実施の形態】本発明の実施の形態を図面によっ
て説明する。図１、図２にて、本発明による投影露光装
置の第１実施例を示す。図１は、本発明の第１実施例に
よる通常使用時での投影露光装置を示す図である。本第
１実施例は、照明工程と露光工程を含む露光方法にて、
レチクル１のパターン面１ａの像をウエハ５の像面５ａ
（感光面）に結像する。すなわち、ＫｒＦエキシマレー
ザー光源等の光源１０から発した光束は、照明光学系１
１を経て、レチクルステージ１２上に載置された原版と
してのレチクル１のパターン面１ａを、均一に照明す
る。レチクル１のパターン面１ａから発した露光光は、
投影光学系２を介して、ＸＹステージ８上に載置された
ウエハ５の像面５ａに、パターン面１ａの像を結像す
る。なお、通常使用時とは、作動空間が、空気のみの状
態をいう。Embodiments of the present invention will be described with reference to the drawings. 1 and 2 show a first embodiment of a projection exposure apparatus according to the present invention. FIG. 1 is a view showing a projection exposure apparatus during normal use according to a first embodiment of the present invention. The first embodiment employs an exposure method including an illumination step and an exposure step,
The image of the pattern surface 1a of the reticle 1 is transferred to the image surface 5a of the wafer 5.
(Photosensitive surface). That is, a light beam emitted from a light source 10 such as a KrF excimer laser light source is
After that, the pattern surface 1a of the reticle 1 as an original placed on the reticle stage 12 is uniformly illuminated. Exposure light emitted from the pattern surface 1a of the reticle 1
The image of the pattern surface 1a is formed on the image surface 5a of the wafer 5 placed on the XY stage 8 via the projection optical system 2. The normal use refers to a state in which the working space is only air.
【０００８】ここで、ＸＹステージ８上には、回転軸７
を介在して、レンズホルダ３に保持された補助レンズ４
が設置されている。この補助レンズ４は、回転軸７を中
心に回転可能となっている。そして、図１に示す位置か
ら１８０°回転すると、補助レンズ４は、投影光学系２
の真下に配置される。このとき、補助レンズ４の光軸
は、投影光学系２の光軸と一致する。また、ＸＹステー
ジ８上には、箱形状の液体遮蔽板６が設置されている。
図１では、簡単のため、液体遮蔽板６の断面のみ示す。
そして、液体遮蔽板６に囲まれた空間に、油等の液体を
入れて、作動空間のウエハ５側部分空間を液体とするこ
とができる。本第１実施例の投影露光装置を液浸状態に
て使用する場合、補助レンズ４を投影光学系２の真下に
配置し、液体遮蔽板６内に液体を入れる。このとき、補
助レンズ４の上面（レチクル１側の面）と、投影光学系
２の下面（最もウエハ５側の面）との間は、空気とな
る。そして、補助レンズ４の下面（ウエハ５側の面）
と、ウエハ５との間は、液体となる。図１の破線Ｍは、
空気と液体の境界線を示す。Here, on the XY stage 8, a rotating shaft 7 is provided.
Auxiliary lens 4 held by lens holder 3 with
Is installed. The auxiliary lens 4 is rotatable about a rotation shaft 7. When rotated 180 ° from the position shown in FIG.
Is placed directly below. At this time, the optical axis of the auxiliary lens 4 matches the optical axis of the projection optical system 2. On the XY stage 8, a box-shaped liquid shielding plate 6 is provided.
FIG. 1 shows only a cross section of the liquid shielding plate 6 for simplicity.
Then, a liquid such as oil is put into a space surrounded by the liquid shielding plate 6, and a partial space on the wafer 5 side of the working space can be made liquid. When the projection exposure apparatus according to the first embodiment is used in a liquid immersion state, the auxiliary lens 4 is disposed immediately below the projection optical system 2, and the liquid is introduced into the liquid shielding plate 6. At this time, the space between the upper surface of the auxiliary lens 4 (the surface on the reticle 1 side) and the lower surface of the projection optical system 2 (the surface closest to the wafer 5) is air. Then, the lower surface of the auxiliary lens 4 (the surface on the wafer 5 side)
, And the liquid between the wafer 5. The broken line M in FIG.
Shows the boundary between air and liquid.
【０００９】図２は、本発明の第１実施例による液浸使
用時での投影露光装置において、補助レンズ４の近傍を
拡大して示した図である。前述したように、液浸使用時
では、補助レンズ４の上面側の空間は空気Ａとなり、補
助レンズ４の下面側の空間は液体Ｌとなっている。ま
た、本第１実施例における補助レンズ４の屈折率は、液
体Ｌの屈折率とほぼ等しい値となっている。補助レンズ
４の上面形状は、ウエハ５上の像面５ａの中心に結像す
るすべての光線Ｋが垂直に入射するような形状となって
いる。すなわち、補助レンズ４の上面の曲率中心が、補
助レンズ４及び液体Ｌがない通常使用時の像面５ａの中
心と一致している。そして、補助レンズ４の上面の曲率
半径Ｒ1は、次式を満たす。 Ｒ1＝ｄ1 （１） ｄ1：補助レンズ４上面からウエハ像面５ａまでの光軸
Ｚ上の距離FIG. 2 is an enlarged view of the vicinity of the auxiliary lens 4 in the projection exposure apparatus when using liquid immersion according to the first embodiment of the present invention. As described above, when the liquid immersion is used, the space on the upper surface side of the auxiliary lens 4 is air A, and the space on the lower surface side of the auxiliary lens 4 is liquid L. Further, the refractive index of the auxiliary lens 4 in the first embodiment is substantially equal to the refractive index of the liquid L. The shape of the upper surface of the auxiliary lens 4 is such that all the light rays K imaged at the center of the image plane 5a on the wafer 5 are vertically incident. That is, the center of curvature of the upper surface of the auxiliary lens 4 coincides with the center of the image plane 5a in normal use where there is no auxiliary lens 4 and no liquid L. The radius of curvature R 1 of the upper surface of the auxiliary lens 4 satisfies the following equation. R 1 = d 1 (1) d 1 : distance on the optical axis Z from the upper surface of the auxiliary lens 4 to the wafer image plane 5a
【００１０】一方、補助レンズ４の下面形状は、平面形
状となっている。前述したように、補助レンズ４と液体
Ｌの屈折率は等しいため、像面５ａの中心付近に結像す
る全ての光線Ｋは、補助レンズ４の下面部においても、
上面部と同様に、ほとんど屈折しない。したがって、液
浸使用時の収束半角は、通常使用時の収束半角と等しく
なる。このとき、投影光学系２のウエハ５側の開口数Ｎ
Ａは、 ＮＡ＝ｎｓｉｎθ ｎ：液体の空気に対する屈折率 θ：収束半角 で求まる。また、分解能Δｒは、次式で求まる。 Δｒ＝ｋλ0／ＮＡ λ0：露光光の空気中での屈折率 ｋ：定数On the other hand, the lower surface of the auxiliary lens 4 has a planar shape. As described above, since the refractive index of the auxiliary lens 4 and that of the liquid L are equal, all the light rays K imaged in the vicinity of the center of the image plane 5 a
Like the upper surface, it hardly bends. Therefore, the half angle of convergence during use of the liquid immersion is equal to the half angle of convergence during normal use. At this time, the numerical aperture N of the projection optical system 2 on the wafer 5 side
A is obtained by NA = n sin θ n: refractive index of liquid to air θ: half angle of convergence. The resolution Δr is obtained by the following equation. Δr = kλ 0 / NA λ 0 : refractive index of exposure light in air k: constant
【００１１】したがって、液浸使用時は、通常使用時と
比べて、開口数をｎ倍、像面５ａ中心付近における分解
能を１／ｎに向上することができる。また、本第１実施
例では、像面５ａの中心に結像する全ての光線Ｋは、補
助レンズ４によっては屈折しないため、球面収差が発生
しない。更に、補助レンズ４の色分散と液体Ｌの色分散
とが等しい場合には、軸上色収差も発生しない。これに
より、光軸Ｚ付近の像面５ａにおいて、液浸使用時であ
っても、通常使用時における結像性能がほぼ保たれる。
更に、液浸使用時と通常使用時とで、投影光学系５によ
る結像位置の変化もない。Therefore, when using the liquid immersion, the numerical aperture can be increased by n times and the resolution near the center of the image plane 5a can be improved to 1 / n as compared with the normal use. Further, in the first embodiment, all the light rays K imaged at the center of the image plane 5a are not refracted by the auxiliary lens 4, so that no spherical aberration occurs. Further, when the chromatic dispersion of the auxiliary lens 4 is equal to the chromatic dispersion of the liquid L, no axial chromatic aberration occurs. As a result, on the image plane 5a near the optical axis Z, the imaging performance during normal use is substantially maintained even during liquid immersion use.
Further, there is no change in the image forming position by the projection optical system 5 between the time of using the liquid immersion and the time of normal use.
【００１２】次に、図３にて、本発明による投影露光装
置の第２実施例を示す。本第２実施例は、補助レンズ４
の形状のみ、前記第１実施例と異なる。図３は、本発明
の第２実施例による液浸使用時での投影露光装置におい
て、補助レンズ４の近傍を拡大して示した図である。本
第２実施例の補助レンズ４の上面部の形状は、前記第１
実施例の補助レンズ４の上面部の形状と等しい。すなわ
ち、上面部において（１）式の関係が成り立つ。Next, FIG. 3 shows a second embodiment of the projection exposure apparatus according to the present invention. In the second embodiment, the auxiliary lens 4
Only the shape is different from the first embodiment. FIG. 3 is an enlarged view of the vicinity of the auxiliary lens 4 in the projection exposure apparatus at the time of using the liquid immersion according to the second embodiment of the present invention. The shape of the upper surface of the auxiliary lens 4 of the second embodiment is the same as that of the first embodiment.
It is equal to the shape of the upper surface of the auxiliary lens 4 of the embodiment. That is, the relationship of the expression (1) is established in the upper surface portion.
【００１３】一方、前記第１実施例の補助レンズ４の下
面部が平面形状であるのに対して、本第２実施例の補助
レンズ４の下面部の形状は曲面形状となっている。そし
て、その下面形状は、上面形状と同様に、ウエハ５上の
像面５ａの中心に結像する全ての光線Ｋが垂直に入射す
るような形状となっている。すなわち、補助レンズ４の
下面の曲率中心が、通常使用時の像面５ａの中心と一致
している。そして、補助レンズ４の下面の曲率半径Ｒ2
は、次式を満たす。 Ｒ2＝ｄ2 （２） ｄ2：補助レンズ４下面からウエハ像面５ａまでの光軸
Ｚ上の距離On the other hand, the lower surface of the auxiliary lens 4 of the first embodiment has a planar shape, whereas the lower surface of the auxiliary lens 4 of the second embodiment has a curved surface. The lower surface shape is such that all the light rays K imaged at the center of the image plane 5a on the wafer 5 are vertically incident, as in the upper surface shape. That is, the center of curvature of the lower surface of the auxiliary lens 4 coincides with the center of the image plane 5a in normal use. Then, the curvature radius R 2 of the lower surface of the auxiliary lens 4
Satisfies the following equation. R 2 = d 2 (2) d 2 : distance on the optical axis Z from the lower surface of the auxiliary lens 4 to the wafer image plane 5a
【００１４】本第２実施例によれば、補助レンズ４と液
体Ｌの屈折率が異なるときや、温度変化等の環境変動に
よって液体Ｌの屈折率が変化するときであっても、収差
や結像位置の変化が少ない。すなわち、像面５ａの中心
に結像する全ての波長の光線Ｋは、補助レンズ４の下面
においても、液体Ｌの屈折率や色分散に関わらず屈折し
ない。したがって、本第２実施例においても、前記第１
実施例と同様に、液浸使用時に高い分解能を得ることが
できる。また、通常使用時と液浸使用時とを比較して
も、投影光学系２による結像位置が変化せず、像面５ａ
での軸上色収差や球面収差の変化もなく、光軸Ｚ付近の
像面５ａでの結像性能が維持される。更に、温度変化等
によって液体Ｌの屈折率が変化しても、結像位置、軸上
色収差や球面収差の変化はない。According to the second embodiment, even when the refractive index of the auxiliary lens 4 is different from that of the liquid L, or when the refractive index of the liquid L changes due to environmental fluctuation such as temperature change, aberrations and / or aberrations may occur. Little change in image position. That is, the light rays K of all the wavelengths imaged at the center of the image plane 5a are not refracted on the lower surface of the auxiliary lens 4 irrespective of the refractive index or chromatic dispersion of the liquid L. Therefore, also in the second embodiment, the first
As in the embodiment, high resolution can be obtained when using immersion. Further, even when the normal use and the liquid immersion use are compared, the image forming position by the projection optical system 2 does not change, and the image plane 5a
The imaging performance on the image plane 5a near the optical axis Z is maintained without any change in axial chromatic aberration or spherical aberration at the time. Further, even if the refractive index of the liquid L changes due to a temperature change or the like, there is no change in the imaging position, axial chromatic aberration, and spherical aberration.
【００１５】次に、図４にて、本発明による投影露光装
置の第３実施例を示す。前記第１、第２実施例では液浸
使用時に作動空間のウエハ５側部分空間の一部を液体と
したが、本第３実施例では、液浸使用時に作動空間の全
部を液体とする。すなわち、液浸使用時には、投影光学
系２の最もウエハ５側の面が、液体に浸されることにな
る。したがって、本第３実施例の投影露光装置は、図１
の液体遮蔽板６の上面が、投影光学系２の下面より高く
なければならない。更に、前記第１、第２実施例の液浸
使用時に用いる図１のレンズホルダ３、補助レンズ４、
回転軸７は、不要となる。FIG. 4 shows a third embodiment of the projection exposure apparatus according to the present invention. In the first and second embodiments, a part of the partial space on the wafer 5 side of the working space is used as the liquid when using the liquid immersion, but in the third embodiment, the whole working space is used as the liquid when using the liquid immersion. That is, when the liquid immersion is used, the surface of the projection optical system 2 closest to the wafer 5 is immersed in the liquid. Therefore, the projection exposure apparatus of the third embodiment is different from that of FIG.
Must be higher than the lower surface of the projection optical system 2. Further, the lens holder 3, the auxiliary lens 4, and the lens holder 3 shown in FIG.
The rotating shaft 7 becomes unnecessary.
【００１６】図４は、液浸使用時において、投影露光装
置の投影光学系２の最もウエハ５側の面を拡大して示し
た図である。投影光学系２の最もウエハ５側の面の形状
は、前記第２実施例の補助レンズ４の下面部の形状と等
しい。すなわち、下面部において（２）式の関係が成り
立つ。一方、通常使用時においても、図４に示す投影光
学系２を用いることになるが、液浸使用時と同様に、像
面５ａの中心付近に結像する全ての光線Ｋの屈折は生じ
ない。本第３実施例においても、前記第２実施例と同様
に、液浸使用時に高い分解能を得ることができる。ま
た、通常使用時と液浸使用時とを比較しても、投影光学
系２による結像位置が変化せず、像面５ａでの軸上色収
差や球面収差の変化もなく、光軸Ｚ付近の像面５ａでの
結像性能が維持される。更に、温度変化等によって液体
Ｌの屈折率が変化しても、結像位置、軸上色収差や球面
収差の変化はない。FIG. 4 is an enlarged view of the surface of the projection optical system 2 closest to the wafer 5 when the liquid immersion is used. The shape of the surface of the projection optical system 2 closest to the wafer 5 is equal to the shape of the lower surface of the auxiliary lens 4 in the second embodiment. That is, the relationship of the expression (2) is established on the lower surface. On the other hand, even in the normal use, the projection optical system 2 shown in FIG. 4 is used. However, as in the case of using the liquid immersion, all the light rays K imaged near the center of the image plane 5a are not refracted. . Also in the third embodiment, high resolution can be obtained when using liquid immersion, as in the second embodiment. Further, even when the normal use and the liquid immersion use are compared, the image forming position by the projection optical system 2 does not change, there is no change in the axial chromatic aberration and the spherical aberration on the image plane 5a, and there is no change in the vicinity of the optical axis Z. Is maintained on the image plane 5a. Further, even if the refractive index of the liquid L changes due to a temperature change or the like, there is no change in the imaging position, axial chromatic aberration, and spherical aberration.
【００１７】[0017]
【発明の効果】以上のように本発明では、投影露光装置
を通常状態と液浸状態とで共用することができる。そし
て、液浸使用時においても、結像位置や光軸付近の結像
性能がほとんど変化しない投影露光装置を提供すること
ができる。更に、液体の屈折率の変化の影響の少ない投
影露光装置及び露光方法を提供することができる。As described above, according to the present invention, the projection exposure apparatus can be used in both the normal state and the liquid immersion state. In addition, it is possible to provide a projection exposure apparatus in which the imaging performance near the imaging position and the optical axis hardly changes even when the liquid immersion is used. Further, it is possible to provide a projection exposure apparatus and an exposure method which are less affected by a change in the refractive index of the liquid.
【図１】本発明の第１実施例による投影露光装置を示す
図である。FIG. 1 is a view showing a projection exposure apparatus according to a first embodiment of the present invention.
【図２】本発明の第１実施例による投影露光装置の液浸
使用時の状態を示す図である。FIG. 2 is a diagram showing a state of the projection exposure apparatus according to the first embodiment of the present invention when using liquid immersion.
【図３】本発明の第２実施例による投影露光装置の液浸
使用時の状態を示す図である。FIG. 3 is a view showing a state of a projection exposure apparatus according to a second embodiment of the present invention when using liquid immersion.
【図４】本発明の第３実施例による投影露光装置の液浸
使用時の状態を示す図である。FIG. 4 is a diagram showing a state of a projection exposure apparatus according to a third embodiment of the present invention when using liquid immersion.
１…レチクル １ａ…パターン面 ２…投影光学系 ３…レンズホルダ ４…補助レンズ ５…ウエハ ５ａ…像面 ６…液体遮蔽板 ７…回転軸 ８…ＸＹステージ １０…光源 １１…照明光学系 １２…レチクルステージ Ｚ…光軸 Ｋ…光線 Ａ…気体 Ｌ…液体 DESCRIPTION OF SYMBOLS 1 ... Reticle 1a ... Pattern surface 2 ... Projection optical system 3 ... Lens holder 4 ... Auxiliary lens 5 ... Wafer 5a ... Image surface 6 ... Liquid shielding plate 7 ... Rotation axis 8 ... XY stage 10 ... Light source 11 ... Illumination optical system 12 ... Reticle stage Z: Optical axis K: Ray A: Gas L: Liquid
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 2H087 KA21 LA00 NA04 PA01 PB01 QA01 QA03 5F046 BA03 CA04 CB12 CB25 CB26 CB27 DA13 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2H087 KA21 LA00 NA04 PA01 PB01 QA01 QA03 5F046 BA03 CA04 CB12 CB25 CB26 CB27 DA13
Claims (4)
面に転写する投影光学系を有する投影露光装置におい
て、 前記投影光学系の最も基板側のレンズ面と前記感光面と
の空間に、補助レンズが挿脱可能に配置され、 該補助レンズの下面と前記感光面との空間は、液浸可能
に形成され、 前記補助レンズの原版側レンズ面の曲率半径は、該原版
側レンズ面から前記感光面までの光軸上の距離にほぼ等
しくなるように形成されたことを特徴とする投影露光装
置。1. A projection exposure apparatus having a projection optical system for transferring a pattern drawn on an original onto a photosensitive surface of a substrate, wherein a projection optical system has a space between a lens surface closest to the substrate and the photosensitive surface. An auxiliary lens is disposed so as to be able to be inserted and removed, a space between the lower surface of the auxiliary lens and the photosensitive surface is formed so as to be immersed in liquid, and a radius of curvature of the original-side lens surface of the auxiliary lens is from the original-side lens surface. A projection exposure apparatus formed so as to be substantially equal to a distance on the optical axis to the photosensitive surface.
径は、該基板側レンズ面から前記感光面までの光軸上の
距離にほぼ等しくなるように形成されたことを特徴とす
る請求項１記載の投影露光装置。2. The apparatus according to claim 1, wherein a radius of curvature of the substrate side lens surface of the auxiliary lens is substantially equal to a distance on the optical axis from the substrate side lens surface to the photosensitive surface. 2. The projection exposure apparatus according to claim 1.
面に転写する投影光学系を有する投影露光装置におい
て、 前記投影光学系の最も基板側のレンズ面の曲率半径は、
該基板側のレンズ面から前記感光面までの光軸上の距離
にほぼ等しくなるように形成されたことを特徴とする投
影露光装置。3. A projection exposure apparatus having a projection optical system for transferring a pattern drawn on an original onto a photosensitive surface of a substrate, wherein a radius of curvature of a lens surface closest to the substrate of the projection optical system is:
A projection exposure apparatus formed to be substantially equal to a distance on the optical axis from the lens surface on the substrate side to the photosensitive surface.
載の投影露光装置を用いて露光する方法において、 前記原版を所定の露光光で照明する照明工程と、 前記投影光学系を介して前記原版のパターン像を前記基
板の感光面に露光する露光工程とを含むことを特徴とす
る露光方法。4. A method of exposing using the projection exposure apparatus according to claim 1, wherein an illumination step of illuminating the original with predetermined exposure light; Exposing the pattern image of the original to a photosensitive surface of the substrate through the exposure step.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10239562A JP2000058436A (en) | 1998-08-11 | 1998-08-11 | Projection aligner and exposure method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10239562A JP2000058436A (en) | 1998-08-11 | 1998-08-11 | Projection aligner and exposure method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000058436A true JP2000058436A (en) | 2000-02-25 |
Family
ID=17046655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10239562A Pending JP2000058436A (en) | 1998-08-11 | 1998-08-11 | Projection aligner and exposure method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000058436A (en) |
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