WO2004053957A1 - Surface position detection apparatus, exposure method, and device porducing method - Google Patents

Surface position detection apparatus, exposure method, and device porducing method Download PDF

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Publication number
WO2004053957A1
WO2004053957A1 PCT/JP2003/015736 JP0315736W WO2004053957A1 WO 2004053957 A1 WO2004053957 A1 WO 2004053957A1 JP 0315736 W JP0315736 W JP 0315736W WO 2004053957 A1 WO2004053957 A1 WO 2004053957A1
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WO
WIPO (PCT)
Prior art keywords
surface
substrate
light
liquid
optical system
Prior art date
Application number
PCT/JP2003/015736
Other languages
French (fr)
Japanese (ja)
Inventor
Yasuhiro Hidaka
Hideo Mizutani
Nobutaka Magome
Soichi Owa
Original Assignee
Nikon Corporation
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Filing date
Publication date
Priority to JP2002-357955 priority Critical
Priority to JP2002357955 priority
Priority to JP2003-072485 priority
Priority to JP2003072485 priority
Application filed by Nikon Corporation filed Critical Nikon Corporation
Publication of WO2004053957A1 publication Critical patent/WO2004053957A1/en

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece
    • G03F7/70341Immersion

Abstract

A surface position detection apparatus (100) comprising a light transmitting system (8) for projecting a detection light onto a surface (S) to be detected, and a light receiving system (9) for receiving a reflection light from the surface (S)to be detected, the surface position information of the surface (S) to be detected being detected based on information obtained from the light receiving system (9). A plurality of lights L1, L2 as detection lights are projected on to the surface (S) to be detected at different incident angles θ1, θ2. Surface position information can be corrected based on reflection lights from the lights L1, L2 even when the refractive index of a medium on the surface (S) changes with a change in temperature. The surface position detection apparatus (100) is useful for an immersion exposure system.

Description

Specification surface position detecting apparatus, an exposure method, and device manufacturing method art

The present invention relates to an exposure method for exposing a surface position information of the test surface optically detect the surface position detecting apparatus, an image of pattern of the mask on the substrate, and Der relates device manufacturing method

BACKGROUND

Semiconductor devices and liquid crystal display devices, to transfer a pattern formed on a mask onto a photosensitive substrate, is manufactured by a so-called photolithography technique. The follower Bok lithographic Ye as exposure apparatus used in, and a substrate stage for supporting the mask stage and the substrate supporting the mask, the mask while moving Exiled following the Masukusute temporary and substrate stearyl temporary pattern to the c exposure apparatus is transferred onto the substrate via a projection optical system, in order intended to adjust the substrate surface with respect to the image plane of the projection optical system, auto focus detection system which detects surface position information of the substrate surface It is provided. The Saiichi Bok focus detection system (AF detection system), for example, there is an oblique incidence method as disclosed in JP-A-6 6 6 5 4 3 No.. This is by irradiating the focus detection light from an oblique direction with respect to the substrate surface, to detect the position information of the substrate surface by the light reflected at the substrate surface. The AF detection system oblique incidence type, as schematically shown in FIG. 1 0 (a), when moved in the vertical direction as the surface of the substrate P is a surface to be inspected such as code P ', for irradiated AF since the reflected light at the substrate surface of the detection light L is shifted in a direction perpendicular to the optical axis of the optical system constituting the AF detection system, in the direction of the optical axis of the projection optical system of the substrate surface by detecting the displacement amount D a it is possible to detect the surface position information. However for higher resolution of the projection optical system in order to cope with higher integration of the device pattern it is desired. Resolution of the projection optical system, as the exposure wavelength used becomes shorter and the numerical aperture of the projection optical system is large (window increases. Therefore, the exposure wavelength used in exposure equipment, is shortened year by year wavelength, the projection the numerical aperture of the optical system is also increased. the mainstream exposure wavelength currently is the 248 nm of K r F excimer laser, being further also practically 1 93 nm of a r F excimer laser with a short wavelength there. Furthermore, when exposure is performed, similarly to the resolution depth of focus (DOF) is also important. resolution R, and the depth of focus 5 are expressed by the following equations.

R = k, ■ input / NA ... (1)

<5 = ± k 2 - λ / Ν A 2 ... (2)

Here, lambda is the exposure wavelength, New Alpha is the numerical aperture of the projection optical system, have k 2 represent the process coefficients. (1) and (2), in order to enhance the resolution R, then shorten the exposure wavelength lambda, and the numerical aperture ΝΑ increased, it can be seen that the depth of focus 5 becomes narrower. When the depth of focus <5 too narrow, Rukoto to match the substrate surface with respect to the image plane of the projection optical system becomes difficult, margin during the exposure operation may be insufficient. Therefore, by substantially shortening the exposure wavelength and a method of widening the depth of focus, for example, immersion method disclosed in International Publication No. 99/49504 it is proposed. This liquid immersion method fills the space between the lower and the substrate surface of the projection optical system with a liquid such as water or an organic solvent, the wavelength of the exposure light in the liquid, refraction 1 / eta (eta in the air of the liquid Usually 1. using to become 2 to 1. about 6) with improved resolution by a factor, in which say the depth of focus is magnified about η times. However, if you try to find the surface position information of the substrate surface in the AF detection system oblique incident scheme as above mentioned in the state filled with liquid between the lower surface and the substrate surface of the projection optical system, for example temperature change If the refractive index of the liquid varies due to an equal, as shown in the schematic diagram of FIG. 1 0 (b), those in the previous refractive index change was incident angle of detection light L to the surface of the substrate P is Θ , resulting disadvantageously changes as 0 'after the refractive index change. Since the optical path of the reflected light of the detection light L and the substrate P and the inlet elevation angle changes is shifted in pairs in the optical path before the change in refractive index, even though the position of the substrate surface is not changed, the AF detection system misalign the position of the detection light L incident on the light receiving surface (light reflected by the substrate surface), AF detection system would result in a determination that the position of the substrate is erroneously varied. As a result, it may become impossible to accurately measure the surface position of the substrate surface. DISCLOSURE OF THE INVENTION The present invention was made in view of such circumstances, the surface position of the surface position information can be accurately detected on the surface of the substrate the refractive index of the optical path of the AF detection system of the detection light is changed providing a detection device to a first object. Further, a to provide an exposure method and device manufacturing method can manufacture devices also the refractive index of the optical path of the AF detection system of the detection light is changed by detecting accuracy good <substrate surface position information second object to. Further, between the projection optical system and the substrate is also a pattern image via a liquid using a liquid immersion exposure method for projecting onto a substrate, the exposure method capable of forming an emission image butter to accurately onto the substrate providing a third object of. Especially even when the temperature of the liquid is changed, the provision of an exposure method which can be formed accurately on the substrate a pattern image and the fourth object of. To solve the above problems, the present invention adopts the following constructions corresponding to Figs. 1 to 9 shown in the embodiment. However, parenthesized reference numerals affixed to respective elements merely examples shown of the elements, is not intended to limit the respective elements. According to a first aspect of the present invention, on the basis of the detected light as well as projected onto the test surface (S), the information obtained by receiving the reflected light from the test surface (S), the test a surface position detecting apparatus for detecting a surface position of the surface (S),

As detection light, a plurality of light (L 1, L 2) sending system for projecting the test surface (S) at different incident angles (0 There theta 2) and (8);

Receiving system for receiving the light reflected from the test surface (S) and (9); the surface position detecting apparatus comprising a (1 00) is provided. Further, according to a second aspect of the present invention, in an exposure method in which the mask (Micromax) pattern image projection optical system. By projecting onto the substrate ([rho) by (PL), for exposing a substrate ([rho) it shall apply: with projecting a plurality of detection light on the substrate surface (S) (L 1, L 2) having different angles of incidence (S 1 θ 2), the reflected light from the substrate surface (S) (L 1 r, L by the receiving child to 2 r), the detection light (L 1, L 2) and reflected light (L 1 r, and detecting the refractive index information of the optical path of L 2 r);

And Rukoto be projected by the mask pattern image projection optical system of the (M) (PL) onto the substrate (P); an exposure method comprising is provided. According to the present invention, even if the refractive index of the optical path of the detection light is changed, by projecting the test surface at different angles of incidence a plurality of light as the detection light, the surface position information based on the respective detected light since each showing a different measurement error (error amount) from each other, these differences error amount

It can be determined refractive index variation of the optical path on the basis of the (difference). Then, Runode can be corrected detected surface position information on the basis of the refractive index variation is refractive Oriritsu information obtained can be determined accurately the surface position information of the test surface. Note that project to the test surface is a plurality of light at an incident angle different, for example, by also using a plurality of light sources and the optical system. Alternatively, a light source having a variable wavelength laser and a plurality of wavelengths, wavelength selective filters, etalons, spectrometer, used together with a prism, and changes the optical path for each wavelength of light so that the incident angle to the test surface are different it may be. Alternatively, it may be divided or deflects the optical path by using a pupil division plate or galvanometer mirror scratch. According to a third aspect of the present invention, on the basis of the detected light as well as projected onto the test surface (S), the information obtained by receiving the reflected light from the test surface (S), the test a surface position detecting apparatus for detecting a surface position of the surface (S):

As detection light, light transmitting system for projecting a plurality of lights having different wavelengths on the test surface (S) and (8);

Receiving system for receiving the light reflected from the test surface (S) and (9); the surface position detecting apparatus comprising a (1 00) is provided. Further, according to a fourth aspect of the present invention, filed by exposure method and projected by the mask pattern image projection optical system of the (M) (PL) onto the substrate (P), to expose the substrate (P) Te:

With projecting a plurality of detection light of different wavelengths to the substrate surface (s), by receiving the reflected light from the substrate surface (S), and detecting the refractive index information of the optical path of the detection light and the reflected light ;

It and the image of the pattern of the mask (M) via a projection optical system (PL) for projecting onto the substrate (P); an exposure method comprising is provided. According to the present invention, by utilizing the fact that exhibit different values ​​their respective refraction angle when incident on the object with light having different wavelengths from each other, projecting a plurality of detection light having different wavelengths, the possible the detection light at different incident angles from each other relative to the sample surface. In this case, the detection light is the feature to be projected onto the sample surface through the light transmitting member. The light transmitting member, an optical element constituting the projection optical system, and a plane-parallel plate having optical transparency is disposed between the projection optical system and the interfering optical system. Particularly, in the case of performing the exposure processing by immersion method also, since the surface position detection of high precision substrate surface via a liquid can realize, it is possible to perform the flap Ichin transfer with high resolution. Further, according to a fifth aspect of the present invention, a pattern image via a liquid (50) by a projection optical system (PL) and projected onto the substrate (P), liquid immersion exposure of the substrate (P) an exposure how:

At least a portion between the projection optical system and (PL) and the substrate (P) and Succoth met by the liquid (50);

Projection optical system (PL) and the substrate (P) and the temperature information of the liquid (50) and to optically detect between;

The projection optical system (PL) and that an image of a pattern through a liquid (50) is projected onto the substrate (P); an exposure method comprising is provided. According to the present invention, through the temperature information by detecting (temperature changes), the detection and the liquid surface position of the substrate surface to be carried out through the liquid of the liquid between the projection optical system and the substrate formed is the can grasp the influence of the pattern image, for example it is also possible to perform image adjustment based on the detected temperature information. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic configuration diagram showing an embodiment of an exposure apparatus with a surface position detecting apparatus of the present invention.

Figure 2 is a schematic configuration diagram showing a first embodiment of the surface position detecting apparatus of the present invention.

Figure 3 is an enlarged view showing a substrate in which the detection light is projected.

Figure 4 is a view showing the relationship between the incident angle and the error amount of the detected light relative to the substrate.

Figure 5 is a Furochiya one Bok diagram showing an example of the surface position detecting method of the present invention.

Figure 6 is a schematic diagram showing a second embodiment of the surface position detecting apparatus of the present invention.

Figure 7 is a schematic configuration diagram showing a third embodiment of the surface position detecting apparatus of the present invention.

Figure 8 (a) and (b) is a schematic diagram illustrating a pupil division plate.

Figure 9 is a Furochiya one preparative diagram showing an example of a manufacturing process of semiconductor devices.

Figure 1 0 (a) and (b) are schematic views for explaining a conventional problem. BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, you described with reference to the drawings surface position detecting apparatus and the exposure method of the present invention, but the invention is not limited thereto. Figure 1 in c Figure 1 is a schematic structural diagram showing one embodiment of the old over Bok Fuokasu detecting device mounted exposure apparatus as a surface position detecting apparatus of the present invention, the exposure apparatus EX, supports a mask M mask stage MS Choto, the substrate stage PS Choto supports the substrate P, mask M and illumination optical system IL, for example, illuminated by the exposure light EL to illuminate the mask M supported by the mask stage MST with exposure light EL pattern and the projection optical system PL that projects and exposes the substrate P supported by the substrate stage PST an image of the autofocus of a surface position detecting device for detecting a surface position information of the surface S of the substrate P as the test surface the detection device 1 0 0, and a control device C 0 NT product that controls the operation of the entire exposure apparatus EX. In the present embodiment, exposing a pattern formed mask Μ and substrate Ρ and the mask Μ while synchronously moving in a direction different from each other definitive in the scanning direction (the reverse direction) as the exposure apparatus ΕΧ the substrate Ρ scanning type exposure apparatus When using (so-called scanning stearyl Uz Pas) it will be described as an example. In the following description, X-axis direction synchronous movement direction (scanning direction) of the direction that matches the optical axis AX Z-axis direction, the mask M and the substrate P in the Z axis direction perpendicular to the plane of the projection optical system PL , Z-axis direction and the Y-axis direction perpendicular to the direction (non-scanning direction) is the Y-axis direction. Further, X-axis, Y-axis, and Z-axis directions, respectively, 0Χ, ΘΊ, and the direction. The term "substrate" referred to herein includes those obtained by coating the fabric with Regis Bok on a semiconductor wafer, and the term "mask" includes a reticle formed with a device pattern that is reduction projected onto the substrate. The illumination optical system IL is for illuminating the mask M supported by the mask stage MST with exposure light EL, the exposure light source, Hitoshi the illuminance of the light flux radiated from the exposure light source - optical I integrators gray data to reduction has a condenser lens for condensing the exposure light EL from the optical I integrators gray evening, a relay lens system, a variable field diaphragm which sets the illumination area on the mask M with the exposure light beam EL to Suritsu Bok shape. Illumination area constant at on the mask M is illuminated with a uniform illuminance distribution of the exposure light EL by means of the illumination optical system IL. As the exposure light EL emitted from the illumination optical system IL, for example, for example, the ultraviolet region of the emission lines (g line, h line, i line) and K r F excimer laser beam (wavelength 248 nm) far such or ultraviolet light (DUV light), such as a "F excimer laser beam (wavelength 1 93 nm) and F 2 laser beam (wavelength: 1 57 nm) vacuum ultraviolet light (VUV light) that is used. in the present embodiment employs a r F excimer laser beam. the mask stage MS T is for supporting the mask M, the plane perpendicular to the optical axis AX of the projection optical system PL, i.e. two-dimensionally movable in the XY plane and it is possible infinitesimal rotation in the 0 Z-direction. the mask stage MST is driven by mask stage driving unit MSTD such as a linear motor. the mask stage driving unit MSTD is controlled by the control device C 0 NT. mask stage MS T position of the two-dimensional direction of the mask of the upper Μ And the rotation angle is measured in real time by Les one The interferometer, measurement results the controller C Omikuron'nyutau is outputted to. Controller C 0 New T is masked stage drive apparatus based on the measurement results of les one The interferometer by driving the MS TD to position the mask M supported by the mask stage MS T. the projection optical system PL is for projection exposing the substrate P with the pattern of the mask M at a predetermined projection magnification 3 is composed of a plurality of optical elements (lenses), these optical elements in this embodiment are supported by a barrel PK as a metal member, the projection optical system PL, the projection magnification;. 5, for example 1 / 4 or a reduction system of 1/5. Furthermore, the projection optical science system PL may be either a unity magnification system or an enlargement system. the projection optical system PL is an optical characteristic

It has an imaging characteristic adjustment device PLC for correcting (imaging characteristic). The imaging characteristic adjustment apparatus PLC has, for example, a gas pressure adjusting mechanism of the lens chamber gap adjustment mechanism and a part of lens part group of lenses constituting the projection optical system PL, these adjustments the row Ukoto, the projection magnification of the projection optical system PL, and corrects the optical characteristics such as distortion. Imaging characteristic adjustment device PLC is controlled by the control unit C ONT. The substrate stage P ST is for supporting the substrate P, a Z stage 51 which holds the substrate P via a substrate holder, an XY stage 52 which supports the Z stage 51, the base 53 which supports the XY stage 52 It is equipped with a door. The substrate stage PST is driven by a substrate stage-driving unit PSTD such as a Li Niamota. Operated device PSTD drive the substrate stage is controlled by the control unit CONT. By driving the Z stage 51, the position in the Z-axis direction of the substrate P held by the Z stage 51 (full Saiichi Kas position), and Shitakai, located in the direction is controlled. Further, Kaiupushiron stearyl - by driving di 52, the position in the Kaiupushiron direction of the substrate [rho (substantially parallel to the image plane position of the projection optical system PL) is controlled. That, Z stage 51, narrowing combined surface of the substrate P by controlling the Four Chikarasu position and inclination angle of the substrate P autofocus scheme, and Otres leveling system on the image plane of the projection optical system PL, XY stearate one di 52 performs positioning in the X axis direction and the Y-axis direction of the substrate P. It goes without saying that the Z stearyl one di and the XY stage may be integrally provided. On the substrate stage PST (Zeta Stage 5 1) is movable mirror 5 4 is provided to move relative projecting projection optical system PL with the substrate stearyl temporary PST. Further, the laser interferometer 5 5 is provided at a position opposed to the movement mirror 5 4. Position of the two-dimensional direction of the base plate P on the substrate stages PST, and the rotation angle are real-time meter measuring by the laser interferometer 5 5 The result of the measurement is outputted to the controller CONT. Controller CONT performs positioning of substrate P supported by the base plate stage PST by driving the substrate stage drive apparatus PSTD based on the measurement results of the laser interference interferometer 5 5. In the present embodiment, with improved substantially shortened by angular 军像 degree exposure wavelength, in order to widen the depth of focus substantially, applying the liquid immersion method. Therefore, while transferring the pattern image of at least the mask M onto the substrate P (the projection), the distal end surface of the optical element of the substrate P side surface and the projection optical science system PL of the substrate P (lower surface) of the 7 predetermined liquid 5 0 is satisfied between. In the present embodiment, pure water is used for the liquid 5 0. Pure water, A r F E Kishimare not only one laser light, bright lines in the ultraviolet region emitted exposure light EL, for example, from a mercury lamp (g-rays, h-rays, i-rays) and K r F excimer laser beam (wavelength: If the 2 4 8 nm) far ultraviolet light (DUV light beam) such as, is permeable to the exposure light EL. Further, capable of transmitting plane-parallel plate is provided with the exposure light EL on the front end surface 7 of the projection optical system PL. The plane-parallel plate constitutes a part of the projection optical system PL. The exposure apparatus EX includes a liquid supply unit 1 supplies a predetermined liquid 5 0 in the space 5 6 between the front end surface 7 and the substrate P of the projection optical system PL, and the liquid to recover the liquid 5 0 space 5 6 recovered and an equipment 2. The liquid supply apparatus 1 is provided with a tank for accommodating the liquid 5 0, pressurizing pump, and the like temperature adjusting device for adjusting the supply liquid 5 0 to a predetermined temperature with respect to space 5 6. One end of the supply pipe 3 is connected to the liquid supply apparatus 1, the supply nozzle 4 is connected to the other end of the supply pipe 3. The liquid supply apparatus 1 supplies the liquid 5 0 in the space 5 6 via the supply pipe 3 and the supply nozzles 4. Here, a temperature regulating device provided in the liquid supply device 1 sets the temperature of the liquid 5 0 supplied to the space 5 6, for example, to the same extent as the temperature in the chamber where the exposure apparatus EX is accommodated. Liquid recovery unit 2 is provided with such as a tank for accommodating the suction pump, the liquid 5 0 recovered. The liquid recovery unit 2 one end of the recovery tube 6 is connected, recovery nozzles 5 are connected to the other end of the recovery tube 6. Liquid recovery unit 2 recovers the liquid 5 0 space 5 6 and via the recovery nozzle 5 and the recovery pipe 6. When filled with liquid 5 0 in the space 5. 6, the control unit CONT drives the liquid supply apparatus 1, supplies the liquid 5 0 a predetermined amount per unit time for the space 5 6 via the supply pipe 3 and the supply nozzles 4 to together, to drive the liquid recovery unit 2, a liquid 5 0 given per unit amount of time via the recovery nozzle 5 and the recovery pipe 6 is recovered from the space 5 6. Thus, the liquid 5 0 predetermined amount of space 5 6 between the front end surface 7 and the substrate P of the projection optical system PL is maintained. Next, a description will be given Saiichi Bok focus detection device 1 0 0 as a surface position detecting apparatus for detecting the position in the Z-axis direction of the surface s of the substrate P (focus position). Saiichi Bok focus detecting device (AF detecting device) 1 0 0, a light sending system 8 for projecting detection light L for AF detection (L 1, L 2) on the surface (test surface) S of the substrate P, and a light receiving system 9 for receiving; reflection ^ of the detection light L reflected by the surface S of the substrate P. As shown in Figure 1, light sending system 8, the substrate P from the diagonal direction of the first detection light L 1 and the second two of the detection light of the detection light L 2 with respect to the surface of the substrate P at different angles of incidence projecting the surface S. Each of the detected light from the light sending system 8 1, L 2, part of the projection optical system PL serving as the light transmitting member (a part of the optical element), and the liquid 5 0 filled in the space 5 6 It is projected on the surface S of the substrate P through. Here, to project the detection light L 1, L 2 on the surface S of the substrate P through the portion of the projection optical system PL, for the following reason. That is, in order to arrange the liquid 5 0 stable in space 5 6 necessary to the distance d so as to maintain the surface tension of the liquid 5 0 is set to a predetermined amount (for example, about 2 to 3 mm) is there. However, it is difficult to detect light was 1, L 2 from the good UNA distance d in transmitting system 8 projects directly at an oblique incidence method to the surface S of the substrate P, on the other hand, the distance d as it'll directly projected liquid 5 0 in the space 5 6 increasing is not placed stably. In the present invention, the detection light L 1, L 2 W

Since so as to project on the surface S of the substrate P through the portion of the projection optical system PL, and while maintaining the desired distance d for placing the liquid 5 0 in the space 5 6 stably, the detection light L 1, the L 2 can be projected on the surface S of the substrate P. As a result, the degree of freedom in setting the distance d between the surface S of the front end surface 7 and the substrate P of the projection optical system PL (working distance) can increase Succoth. Further, the incident angle of detection light L 1, L 2 with respect to the surface S of the substrate P, without being bound to the position of the light projecting projection optical system PL, it is possible to freely change.

AF detector 1 0 0, based on a detection signal of the light receiving system 9 obtained from the reflected light on the surface S of the substrate P, the image plane (image plane formed via the projection optical system PL and the liquid 5 0 ) obtaining the height position in the Z-axis direction of the surface of the substrate P (focus ί Tatsu置) against. Also, by determining the respective focus positions at a plurality of points on the substrate Ρ surface, AF detection device 1 0 0 can also be determined inclination direction of orientation of the substrate P. AF detector 1 0 0 detection result is outputted to the control unit CONT, the control unit CONT based on the AF detecting equipment 1 0 0 detection result, the position of the image plane and the surface of the substrate P of the projection optical system PL adjust relationship, performs focusing operation is intended to adjust the surface of the substrate P within the depth of focus of the projection optical system PL. Figure 2 is a block diagram showing a first embodiment of the AF detection device 1 0 0. Incidentally, partially omitted from illustration for the components other than the AF detection device 1 0 0 In FIG. And have you in FIG. 2, the optical system 8 feeding of AF detection device 1 0 0, the first light sending system for projecting detection light 1 of the first in the first incidence angle of 0 with respect to the surface S of the substrate P 8 It comprises a a, a second light sending system 8 beta projecting the second detection light L 2 at a different second angle of incidence 0 2 from the first incidence angle theta lambda with respect to the surface of the substrate P . The light receiving system 9 of the AF detection device 1 0 0 is provided corresponding to the first light sending system 8 Alpha, it receives the first reflected light of the detection light L 1 reflected by the surface S of the substrate P a first light receiving system 9 a, provided corresponding to the second light sending system 8 B, a second light receiving system 9 B for receiving the second detection light and second reflected light reflected by the surface S of the substrate P It is equipped with a. The first light transmitting system 8 A, an AF light source 1 0 that emits non-photosensitive light beam (wavelength 4 0 0 Nm~9 0 about 0 nm) the photoresist of the substrate P, emitted from the light source 1 0 and sending slits 1 1 having a slit Bok shaped opening for shaping the light beam to the slit light, the astigmatism correcting cylindrical lens 1 2, the relay first lens 1 3, the mirror 1 4 optical path bending, the aberration correcting plane plate 1 5, and an objective lens 1 6. As sending Sri Uz Bok 1 1 detection light L 1 first is Suridzuto light shaped by the, cylindrical lens 1 2, relay lens 1 3, mirror 1 4 optical path bending, the aberration correcting plane plate 1 5, 及 Beauty It enters the projection optical system PL via the objective lens 1 6. Incidentally, the barrel PK has an opening, slit Bok light enters the projection optical system PL through the opening. First detection light L 1 incident on the projection optical science system PL is projected at a first angle of incidence 0 on the surface S of the substrate P through the liquid 5 0. First detecting light reflected light L 1 r of L 1 reflected by the surface S of the substrate P is received by the first light receiving system 9 A through a portion of the liquid 5 0 and the projection optical system PL. Here, the barrel PK has an opening, the reflection light is 1 r is c first light receiving system 9 A that is received by the first light receiving system 9 A through the opening, the projection optical system PL an objective lens 1 7 reflected light L 1 r is incident via, aberration correcting plane plate 1 8, a vibration mirror 1 9 that oscillates at a predetermined period, a relay first lens 2 0, astigmatism Ne and HajimeTadashiyo cylindrical lens 2 1, and a light receiving Suritsu Bok 2 2 having a slit-shaped opening, for example, silicon ■ a photo. the light receiving sensor 2 3 consisting of a die old over de. Reflected light L 1 "is at the surface S of the first detection light L 1 of the substrate P, the objective lens 1 7, the aberration correction amount planar plate 1 8, oscillating mirror 1 9, relay lens 2 0, the cylindrical lens 2 1, and received by the light receiving sensor 2 3 through the light receiving Suritsu Bok 2 2. oscillating mirror 1 9 that vibrate in the direction as indicated by the arrow y at a predetermined cycle. with the vibration of the vibration mirror 1 9, image of Suritsu Bok pattern formed on the light receiving Sri Uz Bok 2 2 (sending Suritsu Bok 1 1 Suritsu Bok shaped reflective light was 1 r reflected by the surface S of the formatted substrate P in) also vibrates. the Suritsu Bok with the vibration of the image of the pattern, light passing through the opening of the light receiving scan Lippo DOO 2 2 of the light amount of light passing through the aperture is changed. receiving slit 2 2 reaches the light receiving sensor 2 3. here, position of the opening of the receiving slit 2 2, the surface S and the projection optical system P of the substrate P is test surface When L image plane of the are match over the center of the opening of the light receiving Sri Uz Bok 2 2 are provided so that matches the vibration center of the image of the slit Bok pattern. Thus, the light receiving sensor 2 image of the slit butter over emissions received by the light 3 so that the surface S of the image plane and the substrate P of the projection optical system PL if it is detected at a constant cycle are coincident. Meanwhile, the projection optical system PL If no match surface S Togago image plane and the substrate P are reflected light L 1 r based on the first detection light and 1 shift in a direction perpendicular to the optical axis of the first light receiving system 9 a, receiving since the center of the Suridzu Bok 2 second opening will deviate the oscillation center of the image of the slit Bokupayu over emissions, an image of Suridzu Bok pattern received by the light receiving sensor 2 3 is not detected in a predetermined period. detection result of the light receiving sensor 2 3 is outputted to the control unit CONT, the control unit CONT, light of the light receiving sensor 2 3 Based on the results determine the focus position of the surface S of the substrate P. The second light sending system 8 B, the first based on the adjustment method or the temperature measurement method of the focus position according to the present invention described later (refractive index change assay) Although it provided in addition to the light sending system 8 a, except that the incident angle to the surface of the second detection light L 2 of the substrate P is set to 0 2, a first light transmitting system 8 a because it has the same configuration, the description thereof is omitted. Likewise, the description for the second light receiving system 9 B for receiving the light reflected L 2 r in the second detection light L 2 substrate P surface also has the same structure as the first light receiving system 9 A omitted. Here, having the same wavelength, each of the detection light L 1, L 2 projected by each of the first light sending system 8 A and the second light sending system 8 B. In the case where the distance between the surface S of the front end surface 7 and the substrate P of the projection optical system PL can be secured, the AF detection device 1 0 0 of the detection light, without going through a portion of the projection optical system PL, it may be projected onto the substrate P surface. Next, a method for detecting surface position information of the surface S of the substrate P by using the AF detecting device 1 0 0 described above. 3, first, an enlarged view of the surface S near the second detection light L 1, the substrate L 2 is projected P. The control unit CONT, the first, simultaneously projected first from each of the second light sending system 8 A, 8 B, the second detection light L 1, L 2 with respect to the surface S of the substrate P. First detection light L 1 is projected on the surface S of the substrate P at an incident angle 0 through the liquid 5 0, the second test Idemitsu L 2 is the surface of the substrate P at the incident angle theta 2 via the liquid 5 0 It is projected to S. First, the reflected light L 1 r on the surface S of the second detection light L 1, L 2 in based substrate P, L 2 "their respective of the first and second light receiving system 9 A, 9 B are received. in this case, the liquid 50 is set to a predetermined temperature T, the refractive index of the liquid 50 at this time is eta. also, this and Kino first, second detection light 1 , each of L 2 is projected to the same position on the surface S of the substrate [rho. Therefore, in the absence of refractive index change (temperature change) in the liquid 50, when the substrate [rho is moved in Ζ axially, reflecting the optical axis Re not perpendicular direction by an amount to the optical axis perpendicular to the direction of displacement of the light receiving system of the reflected light L 2 r of the light receiving system of the optical and 1 r are the same. substrate P in the Z axis direction without moving, changing the temperature of the liquid 50 within T 2, by the thought. temperature change when the refractive index of the liquid 50 eta changes by delta eta, first, second light transmitting system 8 Alpha, 8 beta First et al, second detection light L 1, L 2 changes the angle of refraction at the interface between the projection optical system PL or et liquid 50. With the change in the refraction angle, first, second the detection light L 1 of first optical path is the sign of the teeth 2 ', L 2' varies as shown in a change in the incident angle color 'for more surface S of the first detection light to the first substrate P to and, the angle of incidence with respect to the surface S of the second detection light L 2 of the substrate P is changed from 0 2. then, the optical path of the first detection light L 1 of the reflected light L 1 r light of the light receiving system 9 a the axial direction perpendicular distance D 1 deviation becomes reflected light L 1 r '. Similarly, the optical path of the reflected light L 2 r of the second detection light L 2 is a direction perpendicular to the optical axis of the light receiving system 9 B here the distance D 2 displacement becomes reflected light L 2 r 'and c in a thickness of the liquid d, with the temperature variation is assumed that the refractive index of the liquid 50 is changed from n by △ n. the case, the incident angle to the substrate surface of the detection light There was change, the amount of change,

△ 6 = arcsi η [η / (η + Δη)] ■ a si ηθ ... (3). When there is no movement in the Z-axis direction of the surface S of the substrate P, the detection error amount A d of off old one scum position of the surface of the substrate P,

厶 d two d - Ctan (Θ + ΔΘ) - tan 0) / (2 tan 0) - a (4). That is, the detection error amount A d is a focal position of the detecting light L group Hazuki on the detected surface of the substrate P before the refractive index change of the liquid, the detected surface of the substrate P based on the detection light L 'after change in the refractive index of the liquid which is the error of the focus position. Here, as can be seen from equation (3), it depends on the value of 0. theta, than a theta 2, the amount of change in the first incidence angle of the detection light L 1 △ 0 (= θ, '-θ,) and the amount of change in the second incidence angle of the detection light L 2 .DELTA..theta 2 (= theta 2 'one theta 2, it is understood to be a value different from. its Reyue, a detection error amount Ad focus position based on the first detection light L 1, the second detection light L 2 detection error of follower one Kas position based △ d 2. Figure 4 shows a different value is, the incident angle 0 of the detection light L with respect to the surface S of the substrate P, the surface of the substrate P caused Te Bantsu the temperature change of the liquid illustrates an example of a relationship between the detection error amount delta d Four Chikarasu position. FIG. 4, the liquid 50 is pure water (water), the water corresponding to the working de Isutansu the projection optical system PL in case where the thickness d is 1 mm, shows the relationship between the detection light L incident angle 0 and off old carcass detection error amount delta d of when the temperature 01 ° C change 0.5. for example, the first Incident angle of 80 degrees of the detected light is 1, when the incident angle of 0 2 of the second detection light L 2 is set to 85 degrees, the temperature of the pure water is 0. 0 1 ° C change from the liquid 50 If it becomes T 2 and, from FIG. 4, the detection error amount delta d of the focus position based on the first detection light L 1 is about 20 nm, Four force scan position based on the second detection light L 2 the detection error amount Derutaomikuron'iota 2 of about 80 nm. that is, according to the example of FIG. 4, when the temperature of the liquid (water) 50 1 mm thick is 0. 01 ° and C changes, the two detection light Mr. 1, the difference between 60 nm for the detection error amount Ad ,, Ad 2 of L 2 to based <focus position occurs. the above equation (3), as is clear from (4), based on the detected light detection error amount Ad of the focus position is approximately proportional to the change in refractive index due to temperature change of the liquid. the Te month, detection error of the focus position based on the first detection light L 1 Ad, , The difference between the detected error amount Ad 2 focus position based on the second detection light L 2 (ΔοΙ, - Δο ^ ). Also approximately proportional to the refractive index change due to temperature change of the liquid for example, in the context of FIG. 4, When 0. 01 ° C refractive index of the liquid by a change in the liquid temperature is to have changed .DELTA..eta, the difference between the detected error amount at a certain temperature changes - ± a (Δο ^ ΔεΙ 2) is 30 nm (= 60 nm / 2 ) the 昜合, change in refractive index of the liquid becomes delta n / 2 caused by the temperature change.

, I.e., the difference between the focus position Z of the surface of the substrate P, and a focus position Z 2 of the surface of the substrate P detected by the second detecting light L 2 to be detected by the first detection light L 1

(Z, -Z 2) Since detects the pot crucible same position of the surface of the substrate P, the temperature change of the liquid (refractive index change), but does not change unless, to change the refractive index by the temperature change of the liquid that the detection difference of the focus position - Z 2) is you varies in proportion to the refractive index change. Conversely, detection difference of the focus position (Z, - Z 2) it is possible to detect the refractive index change of the liquid from the. In the present embodiment, the controller CO NT was determined by experiments in advance Ya simulation, detecting differences of the focus position

(Z, -Z 2) and stores the relationship between the refractive index change, can determine the amount of change in refractive index based on the focus position Z have Z 2 which are used connexion detect AF detecting device 1 00 it can. Since the temperature change and refractive index change of the liquid is proportional to the detected difference between the focus position location (Ζ, -. Ζ ^ varies in proportion to the temperature change of the liquid Thus, the focus position of its detection difference (Ζ, - Ζ 2) and the relationship between the refractive index variation, or the relation between the temperature variation and refractive index variation of the liquid in the liquid also combined and stored in the control unit C ΟΝΤ, AF detection variation of the liquid temperature based device 1 00 to the focus position Zeta 1 Zeta 2 detected using also can be obtained. Next, the theory for the detection procedure of the substrate Ρ surface with reference to a flowchart of FIG. 5 Akira is. Note that the same is AF detecting device 1 00, in the initial state, the focus position detected based on the detection light L 1 Zeta, and a focus position location Zeta 2 detected based on the detected light and 2 It is adjusted to be in. or And is detected as displacement with respect to the focus position Zeta There Zeta 2 Waso respectively image plane. In order to simplify the explanation, in the description of FIG. 5, Zeta axial position of the substrate Ρ surface does not change case will be described.

AF detector 1 00, based on the command from the control device CO NT, as well as projecting a first detection light L 1 and the second detection light L 2 toward the surface of the substrate P, the detection light L 1, L 2 reflected light L 1 r from the corresponding surface of the substrate P in each received by L 2 r the light receiving sensor 23, a full Saiichi Kas position Z of the surface of the substrate P based on the first detection light L 1, the second respectively detect the focus position Z 2 of the surface of the substrate P based on the detection light L 2 (Sutedzupu S

1) o control unit CONT determines the difference between the focus position Z and Z 2, which is detected (Z one Z 2), detecting the difference of the focus position stored in advance (Ζ - Ζζ) and the refractive index of the liquid 50 based on the relationship information between the variation .DELTA..eta, determine the refractive index variation .DELTA..eta liquid 50 (step S 2). Further, the control unit CONT based on the amount of refractive index change Δη obtained in step S 2, the first detection light L 1 by the focus position Ζ obtained in step S 1, the value HajimeTadashi. In concrete terms, the equation stored in advance (3), using (4), determine the incidence angle variation, caused by a refractive index variation delta eta determined in step S 2, based on its There are detection error of the first detection light L 1 by the focus position Ad, seek. Then, based on the detected error amount Derutaomikuron ^, the first detection light L 1 to correct the focus position Ζ of the detected substrate Ρ table surface using the actual focus position of the substrate Ρ surface (surface position information ) Request (step S 3). Then, the controller CO NT on the basis of the surface position information of the corrected surface of the substrate P, so that the surface and the image surface of the substrate P determined by the correction of this matches the image plane by driving the substrate stage PST and adjusting the positional relationship between the surface S of the substrate P (step S 4). Here, although the thickness d of the liquid 50 has been described is a 1 mm, the control apparatus CONT, the relation corresponding to a plurality of thickness d are stored in advance. Also, where although the liquid 50 is pure water, the relationship is stored in advance in accordance with the liquid used. The first detection light L 1 rather name the detected focus position Z using the focus position Z 2 which is detected using a second detection light L 2 may be used to correct. However, since the better the incident angle is greater detection sensitivity and detection resolution is high, the second the test Idemitsu L 2 as the main detection light, to use first detection light L 1 as the detection light for Ne HajimeTadashi desirable. Meanwhile, in order to determine accurately the refractive index information, the incident angle of 0, the difference between the incident angle 0 2 it is desirable as large as possible. On the other hand, a Kunar is small incident angle to the surface S of the substrate P, the position detection accuracy in the Z-axis direction of the substrate P decreases. Therefore, it is preferable that each satisfy the 3 0 ° ≤0 <9 0 ° condition incident angle with respect to the detection light L 1, L 2 of the substrate P surface. Then, so as to obtain a reflected light having a sufficient amount of light on the surface S of the substrate P, more preferably, the detection light L 1, L respectively 7 0 ° incident angle with respect to the second surface of the substrate P 0 <9 0 ° it is preferred that meets the conditions. In other words, as shown in the graph of FIG. 4, if the angle of incidence is 7 0 ° or more, the amount of error magnitude <changes with respect to variation of the angle of incidence, the temperature change of the liquid 5 0 (refractive index change ) can be sensitive to detect. Furthermore, as in the present embodiment, through a liquid (water), in the case of detecting the surface position of the substrate P surface, the refractive index and the surface of the substrate P of the liquid (water) for the detected light is 1, L 2 the difference between the refractive index of the photosensitive material (resist) is reduced, not sufficiently reflected in the irradiated detection light surface of the light-sensitive material, the light amount (light intensity) of the light received by the light receiving sensor may decrease the there not only, the possibility that a part of the irradiated detection light passes through the light-sensitive material reaches arrival to the underlying surface of the photosensitive material, the reflected light from the underlying surface from being received by the light receiving sensor as Noizu component is there. Therefore, the difference between the refractive index of the photosensitive material of refractive index and the surface of the substrate P of the liquid to the detection light L 1, L 2 (water) (resist), the reflectance of the photosensitive material surface, noise from below ground the photosensitive material considering the influence of light, detects light 1, the incident angle of the L 2 are respectively were 8 4 ° <0 <9 0 ° is desirable. Thus, if allowed to coincide the surface S of the image surface and the substrate P, controller CONT illuminates the mask M with the exposure light EL, the path evening over emissions of the mask M via the projection optical system PL is transferred to the substrate P . When performing an exposure process, the refractive index of the liquid 5 0 due to temperature change varies, when transferred to the substrate P a pattern of the mask M via the projection optical system PL and the liquid 5 0, the pattern transferred to the substrate P it is considered that an error occurs in the image. For example, it various aberrations variations such as scale one ring Noda one down image is transferred to the substrate P as compared with the prior accompanied by ,, refractive index change in the refractive index change of the liquid 5 0, or the image plane position is If you want to change it is it is thought. The control unit CONT on the basis of the AF detection device 1 0 0 using the determined refractive index variation of the liquid 5 0 (or temperature change), differs erroneous image of the pattern transferred to the substrate P does not occur as described above, Bata using the imaging characteristics adjustment device PLC - c example performs image adjustment down image, with the refractive index change of the liquid 5 0, the image plane position of the projection optical system PL is shifted Bok in the Z-axis direction the case, or to drive a part of the optical element in the projection optical system PL, move the mask by adjusting the wavelength of the exposure light EL, pattern through the projection optical system PL and the liquid 5 0 and the image plane, match the surface S of the substrate P. Alternatively, with the refractive index change of the liquid 5 0 (temperature changes), even when various aberrations such as scaling and Distortion down the image of the pattern varies similarly, the mask M Z-axis direction or the tilting J DOO move in the direction, by adjusting the wavelength of the driving part of the optical element or, alternatively exposure light EL in the projection optical system PL, by connexion pattern to the refractive index change of the liquid 5 0 (temperature change) performing an image adjustment on the image so that the error does not occur. As described above, the refractive index of the optical path of the detection light is changed, by projecting the surface S of the substrate P two detection light L 1, L 2 at different incident angles 0 I 0 2, these it can be determined each detected light is 1, L 2 in based <refractive index of the liquid body present in the optical path of the detection light with the measurement error of the surface position information 'Sui report. Accordingly, since it possible to correct the detected surface position information by the refractive index information obtained, the surface position information of the surface S of the substrate P can be accurately detected rather good. In the above-described embodiment, since the two detection light L 1, the incident angle 0 ,, theta 2 of L 2 is greater than 8 0 °, in order to simplify the explanation, the refractive index in the liquid 5 0 change (temperature change) when the substrate Ρ is moved in Ζ axially in the absence, the reflected light L 1 reflected light and the direction perpendicular to the optical axis of the shift amount of the light receiving system of r L 2 r optical axis of the light receiving system and has been described as is the same as the direction perpendicular to the deviation amount, strictly speaking, since the two detection light L 1, the incident angle theta ,, theta 2 of L 2 are different, the refractive index change in the liquid 50 in the absence (temperature change), when the substrate Ρ is moved in Ζ axially, Re not the direction perpendicular to the optical axis of the light receiving system of the reflected light was 1 r amount and light receiving system of the reflected light and 2 r the amount of deviation of the axis perpendicular direction is different from (but the ratio si η Θ / sin 0 2 of the shift amount is constant). In such a case, perpendicular to the optical axis of the light receiving system of the reflected light L 1 reflected light and the direction perpendicular to the optical axis of the shift amount of the light receiving system of r L 2 r accompanying the displacement amount in the Z direction of the substrate P such direction of the relationship between the displacement amount (e.g., si η Θ ^ / sin Θ 2) when obtained in advance, based on actual both reflected light measurement result is different from the relationship obtained in advance, the liquid temperature change of 50 it may be determined that (the refractive index change) occurs. As described above, the liquid 50 in this embodiment pure water is used. Pure water can be obtained in large quantities at a semiconductor manufacturing plant or the like, that it has no adverse effects on the photoresist and the optical element (lens) and the like on the substrate P. Further, the pure water has no adverse impact on the environment and contains very few impurities, also acts to clean the surface of the optical element provided at the end face of the surface, and the projection optical system PL of the substrate P expectations can c Then, the refractive index n is almost 1 in pure water (water) wavelength with respect to the exposure light EL of about 1 93 nm. 44~1. it is said that about 47, a r F as the light source of the exposure light EL when using excimer Male one laser light (wavelength 1 93 nm), 1 / n, that is, about 1 3 1 to 1 34 nm about the shorter wavelength is high resolution can be obtained on the substrate P. Furthermore, approximately n times the depth of focus than in the air, i.e. approximately 1.44 to 1. Because it is enlarged about 47 times, when the depth of focus approximately the same as that when used in air it is sufficient secured , it is possible to increase the numerical aperture of the projection optical system PL, and resolution improves on this point. In this embodiment, the end surface 7 of the projection optical system PL, as described above, which can transmit the plane-parallel plate is provided with the exposure light EL. The plane-parallel plate is attached detachably above the end face of the projection optical system PL (exchange). An optical element to make contact with the liquid 50, by an inexpensive plane parallel plate from the lens, transportation of the exposure apparatus EX, the assembly, the transmittance of the projection optical system PL in the adjustment or the like, of the exposure light EL on the substrate P illuminance, and be attached to the illuminance distribution of the agent that reduces the uniformity (e.g. silicon organic matter) is its plane parallel plate, it is sufficient to replace the parallel plane plate immediately before supplying the liquid 5 0, liquid the replacement cost Bok than the optical element is brought into contact with the body 5 0 when the lens is advantageous in that low. That is, since the scattered particles generated from the Regis Bok by irradiation of the exposure light EL or surface of the liquid 5 due like 0 during deposition of impurities optical element in contact with the liquid 5 0, fouling, regular the optical element it is necessary to exchanged by the optical element is the cheap parallel plane plate, Kos Bok replacement parts as compared with the lens rather low, and it is possible to shorten the time required for replacement, maintenance costs it is possible to suppress an increase or Surupudzu reduction of my (Runnin 'Gukosuto). Of course, the optical element may be a lens attached to the front end surface of the projection optical science system PL. As the optical element to be attached to the end plane of the projection optical system PL, the optical characteristics of the projection optical system PL, For example aberrations (spherical aberration, coma aberration, etc.) may be an optical play Bok used to adjust the. Also, at the tip portion of the projection optical system PL, is brought into contact with only the optical element (plane-parallel plate or a lens) on the liquid body 5 0, with the configuration in which nothing comes into contact with the barrel PK, the barrel PK formed of metal corrosion or the like can be prevented. Further, when the pressure between the substrate P and the optical element at the tip of the projection optical system PL caused by the flow of liquid 5 0 is large, instead of the replaceable its optical element, optical element by the pressure it may be firmly fixed so as not to move. In the present embodiment, an example has been described for projecting on the surface S of the base plate P 2 two detection light is 1, L 2 at different incident angles 0 2, the number of detection light projected at different angles of incidence from each other may be projected to any of a plurality of light beams of three or more it is not limited to two. Further, when passing the detection light L 1, L 2 to a portion of the projection optical system is only one optical element so the pass closest to the substrate P of the plurality of optical elements constituting the projection optical system PL may be, it may be caused to pass through a plurality of optical elements. In the present embodiment, between the surface S of the front end surface 7 and the substrate P of the projection optical system PL is a structure which is filled with liquids 5 0, for example, from a plane-parallel plate on the surface S of the substrate P it may be configured to satisfy the liquid 5 0 in a state of attaching the Do that cover glass. In this case, the detection light L 1, L 2 from the light-sending system 8, the other part and the liquid 5 0 of the projection optical system PL, and the surface S of the substrate P through the cover glass serving as the light transmitting member It will be projected. In the present embodiment, a case where the spatial 5 6 between the surface S of the front end surface 7 and the substrate P of the projection optical system PL liquid 5 0 is satisfied has been described as an example, the space 5 6 to no liquid 5 0, for example, the space 5 6 for the case is filled with a gas such as air also, it is of course possible to apply the present onset bright. In this case, based on the detection light projected on the surface S of the substrate P at an incident angle of a plurality of different, it is a child detect refractive index information of the gas in the space 5 6. Based on this detected light, it is possible to detect the change in temperature of the gas in the space 5 6. Further, the detection light of the optical path including the space 5 6, liquid (water) 5 0 or materials other than air may be present. For example, transparent optical element (glass, lens) light and water than for example a fluorine-based liquid such as (fluorine-based liquid) or perfluoropolyether (PFPE) oil may be present. In particular, when using a vacuum ultraviolet light of F 2 lasers light such as the exposure light, it is preferable to use the vacuum ultraviolet light capable of transmitting full Tsu Motokei oil as a liquid. Also in this case, on the basis of the detection light projected on the surface S of the substrate, it is possible to detect the presence on the optical path for example refractive index † f report including temperature change of the optical element or fluorine old I le. With the principles of the present invention, it is possible to determine through the refractive index change of the temperature change of the material, the present invention relates to an optical transmitting property is gas, it can be used in the temperature change method of measuring fluid and solid, such as a liquid it can. In particular, the method of the present invention is effective at normal temperature sensors difficult minute area temperature measurement, a high temperature atmosphere, pressure atmosphere, like highly corrosive atmosphere. Further, in the present embodiment, the detection light L 1, L 2 has passed through the projection optical system PL, the refractive index of the projection optical system PL also varies slightly with temperature changes. In this case also, by obtaining the amount of error based on the respective detected light of a plurality of different angles of incidence, it is possible to obtain the projection optical system P Shino temperature change (a refractive index change). Next, referring to FIG. 6, that describes a second embodiment of the AF detection device 1 0 0. In the following description, the same reference numerals are given to the same or equivalent constituent parts as in the first embodiment described with reference to FIG. 2, simplified or omitted. In AF detection device 1 0 0 shown in FIG. 6, light transmitting system 8 and the light-receiving system 9 is provided one each. The feature of this embodiment is that the wavelength selective filter 2 4 are provided in light sending system 8. Transmitting system 8 includes a light source 1 0, a wavelength selection filter 2 4 provided on the light path downstream of the light beam emitted from the light source 1 0, sending Sri Uz and sheet 1 1, astigmatism correcting cylindrical lens 1 2, a relay lens 1 3, the bending mirror one 1 4 fold the optical path, the aberration correcting plane plate 1 5, and an objective lens 1 6. Light receiving system 9 includes an objective lens 1 7 reflected light via the projection optical system PL is incident, an aberration complement Tadashiyo flat plate 1 8, a vibration mirror one 1 9 which oscillates at a predetermined period, a relay lens . 2 0, and astigmatism correcting cylindrical lens 2 1, dichroic and worship mirror one 2 6, and the receiving slit 2 2 a, 2 2 b with Sri Uz Bok-shaped opening, for example, silicon off old Bok - and a light receiving sensor 2 3 a, 2 3 b made of die Saiichi de. Wavelength selection filter 2 4 can it to set the wavelength of the detection light projected to the liquid 5 0 and the substrate P. That is, the light transmission system 8, by the wavelength selection filter 2 4 can be projected a plurality of detection light different in wavelength with respect to the surface S of the substrate P. For example, the first detection light L 1 having a first wavelength, the second and the detection light L 2 having a second wavelength different from the first wavelength, incident from the projection optical system PL in the liquid 5 0 refraction angle at the time of the that Do different. Therefore, different from each other first, the incident angle when projected onto the substrate P through the second detection light L 1, L liquid 5 0 it its 2 having different wavelengths from each other. For example, the liquid 5 0 and water, the first detection light L 1 C-line (wavelength 6 5 6. 3 η m) is projected as the second detection light L 2 as the d-line (wavelength of 5 8 7.6 consider the case where nm) is Ru is projected. If the angle of incidence with respect to the surface S of the substrate P to the d-line is 8 0 degrees, the difference in incident angle with respect to the surface S of the substrate P between the d-line and C-line is zero. 1-4 degrees. The reflected light reflected 1 "and then 2 r at the surface of the substrate P is incident on the light receiving system 9 respectively. Then, the reflected light L 1 r transmitted through the dichroic mirror 2 6 in the receiving system 9 light receiving sensor 2 3 incident on a, reflected light is 2 r reflected by the dichroic mirror one 2 6 incident on the light receiving sensor 2 3 b. receiving sensor 2 3 a, 2 3 b of the detection result is outputted to the control unit CONT , as the first embodiment, it is possible to determine the refractive index information of the liquid 5 0. Note that no dichroic mirror 2 6 in the light receiving system 9, when the light receiving sensor 2 3 is not disposed only one may be a test Idemitsu L 1 of the first wavelength by the wavelength selection filter 2 4 and the detection light L 2 of the second wavelength in the Hare by is incident alternately on the surface of the substrate P respectively. Next, FIG. 7 Referring while AF detection shown in c Figure 7 illustrating a third embodiment of the AF detection device 1 0 0 In location 1 0 0, light transmitting system 8 and the light-receiving system 9 are respectively provided one at a time. Then, features of the present embodiment, the pupil dividing plate 2 5 is provided on the light transmitting system 8 point is. light sending system 8 includes a light source 1 0, and sending slits 1 1, and HitenOsamu difference correcting cylindrical lens 1 2, a relay lens 1 3, the mirror 1 4 optical path bending, the aberration correcting a flat plate 1 5, an objective lens 1 6, and a pupil division plate 2 5 provided in the optical path near the downstream side of the objective lens 1 6. receiving system 9, the reflected light via the projection optical system PL There the objective lens 1 7 incident, the aberration correcting plane plate 1 8, a vibration mirror one 1 9 which oscillates at a predetermined periodic, a relay lens 2 0, and astigmatism correction Shirindori Karurenzu 2 1, a light receiving slit Bok 2 2 having Suridzu Bok-shaped opening, for example, or silicon ■ Images' Daiodo Made and a light receiving sensor 2 3. Pupil division plate 2 5 be one having a predetermined opening 2 5 A, the opening 2 a part of the light beam irradiated to the pupil division plate 2 5 5 A via the pass. that is, FIG. 8 (a), the simple manner shown, that the pupil splitting the light beam by moving the pupil division plate 2 5 in a direction perpendicular to the optical axis of the light-sending system (b) in, detecting sets the incident angle of detection light on the different incident angles 0 I 0 2 together with respect to the surface S of the substrate P, and the reflected light L 1 r and L 2 r corresponding to respectively receiving sensor 2 3 way, similar to the first embodiment, it is possible to determine the refractive index information of the liquid 5 0. Further, by the this alternately repeating the states of FIGS. 8 (a) and FIG. 8 (b), the even. Third embodiment can obtain the refractive index information of the liquid 5 0 (Mabo real-Eye by arranging the split plate 2 5, similarly to the second embodiment, even in one transmission optical system 8 and the light receiving system 9, can be projected morphism the substrate P multiple detection light at different angles of incidence . Incidentally, by providing a pupil division plate between the substrate P and the objective lens 1 7 of the light receiving system 9 may be prevented disturbances such as stray light. in the embodiment described above, AF detecting device 1 0 0 based on optically detected temperature information of the liquid 5 0 (refractive index information) used, to adjust the relationship between the surface S of the optimal image surface and the base plate P in the image of the pattern, and the adjustment of the pattern image projected onto the substrate P or one line, but based on the detected temperature information Te, can be liquid 5 0 temperature (refractive index) optimization between it. Thus the projection optical system PL and the substrate P is also possible to control the temperature of the liquid supplied from the liquid supply device 1 become. in the embodiment described above, although the so that to project the detection light to the surface of the substrate P as the test surface is not limited to the surface of the substrate P, for example, it is formed on the substrate stage PST the reference plane and the upper surface of the sensor which are may be projecting detection light as the test surface. in the embodiment described above, the detection near the center of the projection area of ​​the image of the pattern of the mask M is projected Although so as to project light, the detection light to the outside of the projection area may be morphism throw. Further, in the above-described embodiment, AF detection device 1 0 0, two of the detection light to be While projected onto test surface, not limited to two, 3 One or more than it can of course. If this occurs, it is possible to obtain a plurality of refractive index change information (temperature change information), it calculates and these average values, more accurate refractive index change it is possible to obtain information (temperature change information). Furthermore, the substrate P in the above-described embodiments, not only a semiconductor wafer for fabricating semiconductor devices, glass substrates for display devices and, thin-film magnetic head ceramic Dzukuweha, or precursor of a mask or reticle used in the exposure apparatus (synthetic stone English, silicon wafer) for use or the like is applied. As for the exposure apparatus EX, in addition to the scanning exposure apparatus of step 'and' scan type by synchronously moving the mask M and the substrate P to scan expose the pattern of the mask M (scanning scan Tetsupa), the mask M and the substrate P the pattern of the mask M collectively exposed in a state of rest, the step moves sequentially steps the substrate P. and. can also be applied to a projection exposure apparatus Libby Bok method (Sutetsupa). Further, the present invention can be applied to a step. And Sutitsuchi scheme of the exposure apparatus for transferring overlapping the small <Tomo two patterns on the substrate P in part. The present invention is also applicable to twin stage type exposure apparatus. The structure and the exposure operation of the twin-stage type exposure apparatus, for example, JP-A-1 0 1 63 099 and JP Rights 1 0 No. 214,783 (corresponding to US Patent 6, 341, 007, 6, 400, 441, 6, 549 , 269 and 6, 590, 634), JP-T 2000- 505958 Patent (corresponding to US Patent 5, 969, 441) or U.S. Pat. 6, 208, 407 are disclosed in, designated by the present international application or the selected country and have you of to the fullest extent permitted by law, with the aid of the disclosures as part of the description of the body. Further, in the above embodiment, moving a stage holding force exposure target substrate employing a full plus exposure apparatus locally liquid between the projection optical system PL and the substrate P in the liquid bath and a liquid immersion exposure apparatus for, in a liquid immersion exposure apparatus for holding a substrate therein to form a liquid bath in a predetermined depth on a stage is applicable to the present invention. The structure and the exposure operation of the liquid immersion exposure apparatus that moves a stage holding a substrate to be exposed in a liquid bath, for example, in JP-A-6-1 24873, JP-forming a liquid bath in a predetermined depth on a stage to the immersion exposure apparatus for holding a substrate therein, for example, JP-a-1 0- 3031 W

1 4 No. or U.S. Patent No. 5, 825, are disclosed respectively in 043, to the extent permitted by law of the state designated or selected in this international application, the body and the disclosures of these documents and part of the description. The type of the exposure apparatus EX, the present invention is not limited to the exposure apparatus for the semiconductor element manufacture that expose a semiconductor element Roh \ ° evening Ichin the substrate P, EXPOSURE APPARATUS and a liquid crystal display device for manufacturing or Deisupurei for manufacturing a thin film Uz de to magnetic, can be widely applied to an exposure apparatus for manufacturing an imaging device (CCD), or reticles and masks. When using a linear motor for the substrate stage P ST and mask stage MS T, it may be used either magnetic levitation type using an air levitation type Lorentz force or reactance force using E Abearingu. Further, each of the stages PST, MST may be a type that moves along a guide, or may be a guide dress type provided with no guide. Example using the Riniamo evening the stage, U.S. Patent 5, 623, 853 and 5, 528, 1 1 8 are disclosed in, far as is permitted of the state designated or selected in this international application are in, a part of the description of the statement with the aid of the description of these documents. Each stage P ST, as the driving mechanism of MS T, each of the stages PST by an electromagnetic force to face the magnet Interview Knitting Bok arranged magnets and an armature Yuni' Bok placing the coil in a two-dimensional two-dimensional, MS T it may be used flat motor evening that drives. In this case, to connect either one of the magnet Interview two Uz Bok and armature Yunidzu Bok stages PST, MST, and provided the other of the magnet unit and the armature Yunidzu Bok stages PST, the moving surface side of the MS T it may be Re. The reaction force generated by the movement of the substrate stage PS T so as not transmitted to the projection optical system PL, it may be mechanically released to the floor (ground) using a frame member. The method for handling the reaction force, for example, U.S. Patent 5, 528, 1 1 8 (JP-A-8-1 66475 No. Gazette) in which is disclosed in detail, laws of the state designated or selected in this international application in the extent that is permissible, and are incorporated herein by reference and the contents of this document. Reaction force generated by the movement of the mask stage MST, in such transmitted to the projection optical system PL odd, may be mechanically released to the floor (ground) using a frame member. This handling of the reaction force, for example, U.S. Patent No. 5, 8 7 4, 8 2 0 are disclosed in detail in (JP-A-8 3 3 0 2 2 4 No.) designated by the present international application or to the extent allowed by the selected national legislation, and are incorporated herein by reference the disclosure of this document. As described above, the exposure apparatus EX of the present embodiment is manufactured by assembling various subsystems, including each constituent element recited in the claims of the present application so that the predetermined mechanical accuracy, the optical accuracy , it is manufactured by assembling. To ensure these respective precisions, performed before and after the assembling include the adjustment for achieving the optical accuracy for various optical systems, an adjustment to achieve mechanical accuracy for various mechanical systems, with the various electrical systems adjustment for achieving the electrical accuracy Te. The steps of assembling the various subsystems into the exposure apparatus includes various subsystems, the mechanical interconnection, electrical circuit wiring connections, and the piping connection of the air pressure circuit. Before the step assembling the various subsystems into the exposure apparatus, there are also the processes of assembling each individual subsystem. After completion of the assembling the various subsystems into the exposure apparatus, overall adjustment is performed and various kinds of accuracy as the entire exposure apparatus are secured. The exposure apparatus is preferably performed in a clean room where the temperature and clean level are controlled. Microdevices such as semiconductor devices are manufactured, as shown in FIG. 9, Step 2 0 1 of designing the function and the performance of the microdevice, a step 2 0 2 of manufacturing a mask (Les chicle) based on the designing step, the device Sutedzu flop 2 0 3 of producing a substrate as a base material, the exposure process steps 2 0 4 for exposing a pattern of a mask onto a substrate by the exposure apparatus EX of the embodiment described above, a device assembly step (dicing step, Bonn loading step, the package comprising the step) 2 0 5, an inspection step 2 0 6 or the like. Even if the refractive index changes in availability detection light on the optical path of industrial, by projecting the test surface at different angles of incidence a plurality of light as the detection light, based <surface position of these respective detection lights since each information indicating the different measurement error doctor each other, it is possible to determine the refractive index information on the optical path on the basis of the difference between the measurement errors. Therefore, it is possible to correct the surface position information detected by the refractive index information obtained can be determined accurately the surface position information of the test surface.

Claims

The scope of the claims
1. With projecting a detection light to the test surface, the reflected light from the test surface based on the information obtained by the light receiving child, a surface position detecting device for detecting a surface position of the test surface ,
As detection light, an optical transmitting system for projecting the test surface a plurality of light at different angles of incidence; surface position detecting apparatus comprising a; and a light receiving system for receiving the light reflected from the test surface.
2. With projecting a detection light to the test surface, the reflected light from the test surface based on the information obtained by the light receiving child, a surface position detecting device for detecting a surface position of the test surface :
As detection light, an optical transmitting system for projecting a plurality of lights having different wavelengths on the test surface; the surface position detecting apparatus comprising a; and a light receiving system for receiving the light reflected from the test surface.
3. The detection light, the surface position detecting apparatus according to claim 1 or 2 is projected to the test surface through the light transmitting member.
4. The detection light, the surface position 置検 detection device according to claim 3, wherein through the liquid is projected to the test surface.
5. The detection light, serial mounting of the surface position detecting apparatus according to claim 1 or 2 is projected to the test surface through the liquid.
6. The pattern of the mask through a projection optical system mounted to an exposure apparatus that be exposed to the substrate and projected onto the substrate, for controlling the positional relationship between the projection optical system image plane and the substrate surface the surface position detecting apparatus according to claim 1 or 2 by projecting the detection light on the substrate surface as the test surface to detect the surface position information of the substrate surface.
.. 7 an image of the pattern of the mask is projected onto the substrate by the projection optical system, a that exposure method to expose a substrate:
With projecting a plurality of detection light at different incident angles to the substrate surface, by receiving the reflected light from the substrate surface, and detecting child refractive index information of the optical path of the detection light and the reflected light;
The exposure method comprising: a projecting onto a substrate by the pattern image of the projection optical system of the mask.
8. The exposure method according to claim 7 that meets the plurality of incident angles 0 of the detected light, respectively 30 ° ≤0 <90 ° conditions.
9. The exposure method according to claim 8 that meets the plurality of incident angles 0 70 ° each 0 of the detection light <90 ° conditions.
1 an image of the pattern of 0. mask is projected onto the substrate by the projection optical system, an exposure method for exposing a substrate:
With projecting a plurality of detection light of different wavelengths to the substrate surface by receiving reflected light from the substrate surface, and to detect the refractive index information of the optical path of the detection light and the reflected light;
The image of the pattern of the mask through a projection optical system and be projected onto the substrate; dew destination ¾ method comprising.
1 1. The exposure method according to claim 1 0 of detecting each wavelength reflected light from the substrate.
1 2. The refractive index information according to claim 7 or 1 0 includes a temperature change of the optical path
1 3. The detection light exposure method according to claim 7 or 1 0 through the part of the optical element included in the projection optical system is projected on the board surface.
1 4. On the basis of the refractive index information, an exposure method according to claim 7 or 1 0 to adjust the position relationship between the projection optical system image plane and the substrate surface.
1 5. Small <Tomo detects the surface position of the substrate surface in one, the detected surface position location based on the plurality of detecting light using connexion refractive index information obtained in the plurality of detection light the exposure method according to claim 1 4 corrected.
1 6. The projection between the optical system and the substrate surface there is a liquid, the exposure method according to claim 7 or 1 0 the refractive index information including refractive index information of the liquid.
1 7. The exposure method according to claim 1 6 wherein the liquid is water.
1 8. The detected change in the refractive index of the liquid by receiving the reflected light, the 請 Motomeko 1 6 for image adjustment so that the error does not occur in the image of the pattern by the refractive index change of the liquid the exposure method according.
. 1 9 a pattern image via the liquid by the projection optical system and projected onto the substrate, there is provided an exposure method for immersion exposure of the substrate:
At least a portion between the projection optical system and the substrate and be filled with the liquid;
The exposure method comprising: detecting the temperature information of the liquid between the projection optical system and the substrate optically and; an image of a pattern through a liquid and to be projected onto the substrate by the projection optical system.
2 0. With projecting a detection light to the substrate surface via the liquid, by the reflected light from the substrate table surface for receiving via said liquid, according to claim 1 9 for detecting the temperature information of the liquid the exposure method according to.
2 1. The exposure method according to claim 1 9 for detecting the surface position information of the substrate surface by receiving the reflected light.
2 2. On the basis of the temperature information, exposure method according to claim 1 9 for adjusting the imaging state of the image of the pattern projected on the substrate.
2 3 · on the basis of the temperature information, exposure method according to claim 1 9 for controlling the temperature of the liquid supplied between the substrate and the projection optical system.
2 4. The determined changes in the refractive index of the liquid from the received reflected light, the exposure method of claim 2 0 which based on the change in refractive index determine the temperature change of the liquid.
2 5. Claim 7, 1 0 or a device manufacturing method using the exposure method according to 1 9.
PCT/JP2003/015736 2002-12-10 2003-12-09 Surface position detection apparatus, exposure method, and device porducing method WO2004053957A1 (en)

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