JPH0695511B2 - Washing drying processing method - Google Patents

Washing drying processing method

Info

Publication number
JPH0695511B2
JPH0695511B2 JP61219969A JP21996986A JPH0695511B2 JP H0695511 B2 JPH0695511 B2 JP H0695511B2 JP 61219969 A JP61219969 A JP 61219969A JP 21996986 A JP21996986 A JP 21996986A JP H0695511 B2 JPH0695511 B2 JP H0695511B2
Authority
JP
Japan
Prior art keywords
wafer
surface
light
substrate
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61219969A
Other languages
Japanese (ja)
Other versions
JPS6373628A (en
Inventor
真人 田中
Original Assignee
大日本スクリ−ン製造株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 大日本スクリ−ン製造株式会社 filed Critical 大日本スクリ−ン製造株式会社
Priority to JP61219969A priority Critical patent/JPH0695511B2/en
Publication of JPS6373628A publication Critical patent/JPS6373628A/en
Publication of JPH0695511B2 publication Critical patent/JPH0695511B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体ウエハやガラス基板等の薄板状被処理基板(以下「ウエハ」と称す)の表面を洗浄した後、 BACKGROUND OF THE INVENTION [Field of the Industrial] This invention, after cleaning the surface of the thin plate-shaped substrate to be processed such as a semiconductor wafer or a glass substrate (hereinafter referred to as "wafer"),
水切り、乾燥させる方法に関する。 Draining, it relates to a method for drying.

〔従来の技術〕 [Prior art]

従来、例えば特開昭59−100540号公報(発明の名称「シリコンウエハーの処理に用いる遠心乾燥機における処理方法」)においては、籠に収納されたウエハに水シャワーを吹き付けながら所要時間(0〜t 1 )定速回転させ、 Conventionally, for example ( "processing method in a centrifugal dryer used in silicon wafer processing" entitled) Sho 59-100540 discloses in the required time while spraying water shower to the wafer accommodated in the basket (0 t 1) to rotate at a constant speed,
次に水シャワーを止めてから所要時間(t 1 〜t 2 )高速回転させ、続いて高速回転の状態でウエハ表面に窒素ガスを所要時間(t 2 〜t 3 )吹き付けて乾燥処理を終るようにした遠心乾燥機における処理方法が知られている(第5 Then the time required after stopping the water shower (t 1 ~t 2) is rotated at a high speed, followed by the required time nitrogen gas to the wafer surface in the state of high-speed rotation (t 2 ~t 3) sprayed to ending the drying process processing methods are known in the centrifugal dryer (fifth
図参照)。 See figure).

〔発明が解決しようとする問題点〕 [Problems to be Solved by the Invention]

特開昭59−100540号公報においては、高速回転開始より所要時間(t 2 −t 1 )後にウエハ表面の水滴が高速回転により振り切られたものとして、不活性ガスを供給し、乾燥させているが、ウエハの表面状態、ウエハの材質、ウエハの寸法等により、所要時間(t 2 −t 1 )を、いちいち実験的に求め、再設定する必要があった。 In JP 59-100540 discloses, as water droplets speed rotation started from the time required (t 2 -t 1) after the wafer surface is spun off by the high-speed rotation, supplying an inert gas, and dried but the surface state of the wafer, the material of the wafer, the size of the wafer or the like, the required time (t 2 -t 1), every time determined experimentally, it was necessary to reconfigure.

一方、不活性ガスを供給する代わりにウエハ表面に光を照射してウエハを乾燥させる場合には、ウエハ表面に水滴が残っていると、その部分がシミとなって残るという問題があるため、パターンとして形成された微細な凹部以外のウエハ表面を完全に脱水処理した後、光照射により乾燥する必要があり、そのためには脱水処理の完了時を正確に検出することが課題となっていた。 On the other hand, when irradiated with light to dry the wafer in the wafer surface instead of supplying the inert gas, the water droplets on the wafer surface remains, since the portion thereof is a problem that remains with the stain, after complete dehydration treatment the formed wafer surface other than the fine recesses as a pattern, it is necessary to dry by light irradiation, it has been a problem to do this to accurately detect the time of completion of the dehydration process.

〔問題点を解決するための手段〕 [Means for Solving the Problems]

この発明はウエハを回転させながらその表面に洗浄液を供給して洗浄し、しかる後、ウエハを洗浄時より高速に回転させてウエハ表面に付着した洗浄液を振り切って脱液し、脱液したウエハ表面に光照射して加熱し、乾燥する方法において、脱液処理時、ウエハの周辺部表面に光を照射し、その表面から反射光または透過光を検知し、 The present invention was washed by supplying a cleaning liquid to the surface while rotating the wafer, thereafter, the wafer is rotated faster than when cleaned with draining shake off the cleaning liquid adhering to the wafer surface, deliquored the wafer surface the heating by light irradiation, a method of drying, during draining process, light is irradiated on the periphery surface of the wafer, it detects the reflected light or transmitted light from the surface,
その検知信号の信号レベルがほぼ一定になった時を脱液処理終了と判定して、その後乾燥処理を行なうようにしたことを特徴とする洗浄乾燥処理方法である。 And determine when the signal level of the detection signal becomes almost constant drainer process ends when a cleaning and drying processing method being characterized in that to carry out the subsequent drying process.

〔作用〕 [Action]

脱液処理工程において、ウエハ表面に光を照射し、その表面からの反射光または透過光を検知すると、その前後においてはその検知信号はウエハ表面上の水滴表面での光の乱反射または吸収等により大きく変動するが、脱液処理後段になってくるとウエハ表面に残存する薄い水膜により反射光または透過光に干渉が生じ、検知信号は一定の振幅を有する信号に変化し、ウエハ表面に形成された微細な凹部以外の水分が遠心力により振り切られた状態で脱液処理が完了すれば、検知信号はほぼ一定となる。 In liquid removing step, the light is irradiated to the wafer surface, when detecting the reflected or transmitted light from the surface at its front and rear by diffused reflection or absorption of light or the like of the detection signal in a water droplet surface on the wafer surface greatly vary, interference occurs in the reflected light or transmitted light by a thin water film remaining when the wafer surface becomes the draining process subsequent detection signal changes to a signal having a constant amplitude, formed on the wafer surface if liquid removing process is completed in a state where the moisture other than minute depressions was spun off by centrifugal force, the detection signal is substantially constant. この場合、脱液処理工程においてウエハが高速回転させられると、ウエハ表面上の洗浄液は、その中央部から周辺部へ移動し、ウエハの中央部から周辺部へ向かって脱液が進行するので、ウエハの周辺部表面の一点に光照射してその反射光または透過光を検知するようにしておくだけで、その検知信号に基づいて脱液処理終了時を判定すれば、その時点ではウエハ表面の全範囲で脱液処理が終了していることになる。 In this case, when the wafer in the liquid removal step is rotated at a high speed, the cleaning liquid on the wafer surface is moved from the center portion to the peripheral portion, since the direction from the central portion of the wafer to the peripheral portion draining progresses, the periphery surface of the wafer irradiated with light on one point only advance so as to detect the reflected or transmitted light, if it is determined the liquid removal process at the end on the basis of the detection signal, the wafer surface at that point so that the liquid removal process has ended in the entire range. また、脱液処理終了時の判定のためのウエハ表面への光照射は、ウエハ周辺部に大して行なわれるので、ウエハの中央部に洗浄液を供給する際の支障となることがない。 Moreover, the light irradiation of the wafer surface for determining the time of liquid removing process ends, so much is done to the wafer periphery, it is not to become a hindrance when supplying a cleaning liquid to the central portion of the wafer. そして、脱液処理完了検知後、ウエハ表面に光照射して、乾燥させることにより、ウエハの均一で完全な乾燥処理を行なうことができる。 Then, after the detection draining process is completed, and the light irradiated on the wafer surface, followed by drying, it is possible to perform a complete drying in uniform wafer.

〔実施例〕 〔Example〕

この発明に係る方法にフローチャートを第1図、そのフローチャートを実施するための装置の1実施例を示す概要図を第2図、第1図のフローチャートにおける各処理工程のウエハ回転数等の時間的変化を表わす説明図を第3図に示す。 Figure 1 a flow chart in the method according to the invention, Figure 2 a schematic view showing an embodiment of a device for implementing the flow chart, the time of wafer rotation speed of each process in the flowchart of FIG. 1 the schematic diagram of the variation shown in Figure 3.

第2図の概要図において、1はウエハWを保持し、水平回転させるチャック、2はチャック1の上方および吊設した洗浄液供給用ノズル、3および4はウエハWにその周辺部においてそれらの一端が近接すべく、表面処理室5の内側面に吊設された投光用ファイバー及び受光用ファイバーである。 SUMMARY diagram of FIG. 2, 1 holding the wafer W, the chuck for horizontally rotating, 2 above and suspended the cleaning liquid supply nozzle of the chuck 1, 3 and their end at its periphery to the wafer W is 4 There order to close a light projecting fiber and light-receiving fibers are suspended in the inner surface of the surface treatment chamber 5. また、表面処理室5の底面には、処理液排出用ドレン管9が設けられており、処理室側壁には、真空源(図示せず)と連結された減圧用配管12が配設されている。 Further, the bottom surface of the surface treatment chamber 5 is provided with processing liquid discharge drain pipe 9, the side wall of the processing chamber, a vacuum source (not shown) vacuum pipe 12 connected is provided with there. さらに、処理室5の上部蓋体5′は透明板で開閉可能に構成され、その上方には、ウエハ乾燥用の赤外線照射ランプ10、および必要により点灯される紫外線照射ランプ11が配設されている。 Furthermore, the upper cover 5 of the processing chamber 5 'is openably constituted by a transparent plate, on its upper and ultraviolet irradiation lamp 11 to be turned on infrared radiation lamp 10 for wafer drying, and if necessary are arranged there.

また、投光用ファイバー3の他端には、発光ダイオードまたは半導体レーザー等の発光手段7、受光用ファイバー4の他端には、光電変換手段6がそれぞれ配設されている。 Further, the other end of the light projecting fiber 3, the light emitting means 7 such as a light emitting diode or a semiconductor laser, the other end of the light receiving fiber 4, the photoelectric conversion unit 6 is disposed, respectively. 光電変換手段6からの出力信号は、制御手段8に入力され、該光電変換手段6からの信号により、ウエハWの表面処理状態を検出することができる。 The output signal from the photoelectric conversion unit 6 is inputted to the control unit 8, a signal from the photoelectric conversion means 6, it is possible to detect the surface treatment state of the wafer W.

第6図は、この制御手段8の1実施例を示すブロック図であり、光電変換手段6からの出力信号は、まず増幅器 Figure 6 is a block diagram showing an embodiment of the control unit 8, the output signal from the photoelectric conversion unit 6 first amplifier
81を介してA/D変換器82にデジタル信号に変換され、中央演算装置(CPU)83に入力される。 81 is converted into a digital signal in A / D converter 82 through a is input to the central processing unit (CPU) 83. CPU83では所定の演算処理、例えば微分処理が行なわれ、微分された光電変換手段6からの出力信号が一定期間所定レベル値以下になった時点で脱液処理を終了させるため、回転制御回路 CPU83 in predetermined arithmetic processing, for example, differential processing is performed, the output signal from the photoelectric conversion unit 6, which is differentiated to terminate the liquid removal process when it becomes less than a predetermined period of time a predetermined level value, the rotation control circuit
84を介して回転チャック1の駆動モータを停止させる。 84 through the stops driving motor rotating the chuck 1.

以後、第1図のフローチャートに従って説明する。 Hereinafter will be described with reference to a flowchart of FIG. 1. まず、処理が開始(ステップS 0 )されると、チャック1に保持されたウエハWが水平回転し始める。 First, when the processing is started (step S 0), the wafer W held on the chuck 1 begins to horizontal rotation. この時の回転数Nは第3図Aに示す如く、0からN 1となり、ノズル2 Rotational speed N at this time is as shown in Figure 3 A, it becomes N 1 from 0, the nozzle 2
(第2図)からはウエハWに洗浄液が供給される(ステップS 1 )。 Cleaning liquid is supplied to the wafer W from (FIG. 2) (Step S 1).

ウエハWの回転数がN 1にてウエハW表面を所要時間(0 Wafer W rotational speed required time the wafer W surface at N 1 of the (0
〜t 1 )洗浄処理した後、ウエハWの回転数NはN 1からN 2 ~t 1) After cleaning, the rotational speed N of the wafer W is N 2 from N 1
(N 2 ≧2000rpm)び切り換えられ、遠心力にて振り返る脱液処理工程(ステップS 2 )に移行する。 (N 2 ≧ 2000 rpm) beauty is switched, the process proceeds to draining process to look back at a centrifugal force (Step S 2). この脱液処理工程への移行と同時に、発光手段7からファイバー3を介してウエハWの表面に光を照射し、その反射光をファイバー4を介して光電変換手段6に入射させることにより、ウエハWの表面における反射光の変化を電気信号V At the same time this transition to draining process, light is irradiated to the surface of the wafer W from the light emitting unit 7 through the fiber 3, by entering the photoelectric conversion unit 6 and the reflected light through the fiber 4, the wafer electrical signal V changes of reflected light at W surface
として制御手段8に入力する。 Inputted to the control unit 8 as. 第3図Bは、光電変換手段6からの出力信号Vの1例を示すもので、ウエハ表面の洗浄液の水滴が残留している間は、ウエハ表面への照射光が乱反射するため、受光ファイバー4に入る光量の変化は大きいが、パターンが形成された微細な凹部以外のウエハWの表面から洗浄液の水滴が完全に振り切られ、その表面に薄い水膜が残留する脱液処理段になると出力信号の振幅が一定となり、最終的に前記凹部以外の水分がなくなった時は、受光量に相当する光電変換手段6からの出力信号Vはほぼ一定となる。 For Figure 3 B is illustrates an example of the output signal V from the photoelectric conversion unit 6, while the water droplets of the cleaning liquid on the wafer surface remains, the illumination light to the wafer surface is diffusely reflected, the light receiving fiber Although the change in quantity of light entering the 4 large, shaken off from the surface of the wafer W other than the fine recesses having a pattern formed completely water drops of the cleaning liquid, a thin water film on its surface is draining process stage the remaining output amplitude of the signal is constant, and finally when the water other than the recess runs out, the output signal V from the photoelectric conversion means 6 corresponding to the received light amount is substantially constant. この出力信号V The output signal V
が一定となる時間t 2を脱液処理終了後と判定する。 There is determined the after deliquor processing end time t 2 becomes constant. 例えば第3図Aの回転数N 2をそれぞれN 2 =500、1000、200 For example Figure 3 A of the rotational speed N 2 respectively N 2 = 500,1000,200
0、および4000rpmとした場合、第3図Bの脱水処理に要する時間(t 2 −t 1 )はそれぞれ60、40、25および15秒となる。 0, and when a 4000 rpm, the time required for the dehydration process of the third FIG B (t 2 -t 1) is respectively 60,40,25 and 15 seconds. また、かかる脱液処理終了後の判定は、例えば、 The determination of such liquid removing process after the end of, for example,
第3図Bの時間t 2より所定時間後を脱液処理終了時として判定することもできる。 The later than the time t 2 in FIG. 3 B a predetermined time may be determined drainer processing end times.

かかる脱液処理の終了後、赤外線照射ランプ10によりウエハW表面に赤外線を照射し、ウエハ表面を乾燥する(ステップS 4 )。 After completion of such liquid removal process, by irradiating infrared rays onto the wafer W surface by infrared irradiation lamp 10 to dry the wafer surface (step S 4). なお、ウエハWの材質がシリコンの場合には、シリコン基板が最も吸収しやすい波長1.2μm Incidentally, in a case where the material of the wafer W is silicon, the silicon substrate is most easily absorbing wavelength 1.2μm
の赤外線領域の光線を主に含むハロゲンランプを赤外線照射ランプ10として用いることが好ましい。 It is preferable to use a halogen lamp mainly including light in the infrared region as an infrared irradiation lamp 10.

第4図は、この発明に係る洗浄乾燥処理方式の他の実施例を説明するためのウエハWの回転数のグラフを示す。 4 shows a wafer W rotational speed of the graphs for explaining another embodiment of a cleaning and drying processing method according to the present invention.
ここでは、前記制御手段8(第2図)に、エッチング処理等の表面処理の終了時点(エンドポイント)を検知する機能をも付加した場合を開示したもので、所定の回転数N 1で回転するウエハWの表面に第2図に図示していないノズルからエッチング液を供給して、ウエハW表面の金属薄膜を選択的にエッチングし、そのエッチング状態を、光ファイバー3および4を介してウエハW表面からの反射光の変化に基づいてエッチング処理のエンドポイントを検知する。 Here, the control unit 8 (FIG. 2), when added even a function of detecting the end point of the surface treatment of the etching process and the like (end point) which was disclosed, rotation at a predetermined rotational speed N 1 from a nozzle not shown in FIG. 2 on the surface of the wafer W by supplying the etching solution, the metal thin film on the surface of the wafer W is selectively etched, the etching conditions, the wafer W through the optical fiber 3 and 4 detecting an endpoint of the etching process based on a change of the reflected light from the surface.

エッチング処理の終了時t 1をエンドポイント(EP)とし、エッチング液の供給を停止するとともに、ウエハW The end t 1 of the etching process to an endpoint (EP), stops the supply of the etching liquid, the wafer W
の回転数をN 1からN 2に変え、ウエハW表面に洗浄液を供給し、ウエハW表面を洗浄する。 The rotational speed change from N 1 to N 2, the cleaning liquid is supplied to the wafer W surface, to clean the wafer W surface. 所定時間経過後、洗浄液の供給を停止し、回転数をN 2からN 4に切り換え、ウエハW表面に残留する洗浄液を振り切り、同時に前記したと同様にして脱液処理の終了点を検知し始める。 After a predetermined time, the supply of the cleaning liquid is stopped, switches the rotational speed from N 2 to N 4, finishing off with the cleaning solution remaining on the wafer W surface, it starts to detect the end point of the liquid removal process in the same manner as described above at the same time . しかる後、ウエハWの反射光がファイバー4に入射する量が一定となった時t 3を脱液処理終了後とし、次にウエハWの表面にランプ11より所定時間t 4まで紫外線を照射し、ウエハW表面に付着している有機および無機の不純物を分解する。 Thereafter, the t 3 when the amount of reflected light of the wafer W is incident on the fiber 4 becomes constant and after dewatered process is completed, then irradiating ultraviolet radiation on the surface of the wafer W to a predetermined time t 4 from the lamp 11 , decompose organic and inorganic impurities adhering to the wafer W surface.

次にウエハWの回転速度をN 4からN 3に切り換え、純水をウエハW表面に供給し、ウエハW表面上の分解した不純物をウエハW表面から除去する。 Then the rotation speed of the wafer W is switched from N 4 to N 3, pure water is supplied to the wafer W surface, to remove the decomposed impurities on the surface of the wafer W from the wafer W surface. なお、この純水洗浄と紫外線照射とは、一定時間重複させる方が不純物の分解除去にとっては、好ましい。 Note that the pure water cleaning and ultraviolet radiation, for the decomposition and removal of the person to duplicate certain time impurities, preferred.

所要時間(t 4 〜t 5 )純水にて洗浄後、ウエハ表面にIP After washing with the required time (t 4 ~t 5) purified water, IP on the wafer surface
A.(イソ・プロピル・アルコール)等の溶剤を供給し、 A. solvent supply of and (iso-propyl alcohol),
ウエハ表面に残留する水分と置換させる。 Water and to replace remaining on the wafer surface.

また、このIPA等の溶剤をウエハW表面に供給する際には、その供給と同時に紫外線を照射すると、IPA等の溶剤が溶解するため、紫外線照射と溶剤供給とは重複しないように制御される。 Further, when supplying the solvent wafer W surface of the IPA etc., is irradiated simultaneously ultraviolet its supply and, because solvents such as IPA is dissolved is controlled so as not to overlap with ultraviolet irradiation and a solvent supply .

次にウエハWの回転数をN 3からN 4に切り換え、再び脱液処理工程に入り(t 6 〜t 7 )、脱液処理の終了点が検知されて、脱液処理を終了する。 Then the rotation speed of the wafer W is switched from N 3 to N 4, enters the liquid removing process again (t 6 ~t 7), and end point of the liquid removing process is detected, it ends the liquid removal process. この脱液処理終了後、ウエハWの回転数はN 4のまま乾燥処理工程に入り、ランプ10 After the liquid removal process is completed, the rotational speed of the wafer W enters the left drying step of N 4, lamp 10
によりウエハW表面に赤外線を所定時間(t 7 〜t 8 )照射する。 The infrared rays onto the wafer W surface a predetermined time (t 7 ~t 8) is irradiated.

なお、上記した脱液処理工程および光照射による乾燥工程は、減圧室内において行なうことができることは言うまでもない。 The drying step by removing liquid applying process and the light irradiation described above, can of course be carried out in a vacuum chamber.

なお、第7図はこの発明に係る方法の他の実施例(透過光の場合)を示す概略図であり、ここでは発光手段7からシリコンウエハWに、例えば1.2μmを主波長とする光を照射し、その透過光を光電変換手段6により受光して制御手段8に入力することにより、反射光の場合と同様脱液処理の終了を検知することができる。 Incidentally, FIG. 7 is a schematic view showing another embodiment of a method according to the present invention (in the case of transmitted light), where the silicon wafer W from the light emitting means 7, for example, a light that the 1.2μm dominant wavelength irradiated, by inputting the transmitted light to the control means 8 and received by the photoelectric conversion means 6, it is possible to detect the end of the case as well as removal solution processing of the reflected light.

〔発明の効果〕 〔Effect of the invention〕

ウエハを洗浄後、高速回転させ、遠心力による脱液処理後、光照射によりウエハを乾燥させる際、ウエハを必要以上に高速回転させることもなく、また逆に、ウエハ表面に洗浄液が残留した状態でウエハ表面に光を照射して、ウエハ表面にシミを発生させるという問題は、脱液処理の終了点を的確に検出することにより解消し、ウエハの回転数に応じた必要最少限度の脱液処理時間で処理することができる。 Condition After washing the wafer, it is rotated at high speed, after liquid removal treatment by a centrifugal force, when drying the wafer by light irradiation, without causing a high speed more than necessary wafer, and conversely, the cleaning liquid on the wafer surface has residual in by irradiating light to the wafer surface, a problem to generate a stain on the wafer surface is solved by accurately detecting the end point of the liquid removing process, draining the necessary minimum limit corresponding to the rotational speed of the wafer it can be processed in the processing time. また、脱液処理終了時の判定のためのウエハ表面への光照射は、ウエハの周辺部においてかつその一点で行なわれるので、この発明に係る方法を実施するための装置の構成が複雑化することもない。 Moreover, the light irradiation of the wafer surface for determining the time of liquid removing process ends, since carried out at the periphery of the wafer and at one point that the structure of the apparatus for carrying out the method according to the present invention is complicated nor.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

第1図はこの発明に係る方法を実施するための1例を示すフローチャート、第2図はこの発明に係る方法を実施するための1例を示す装置の概要図、第3図はこの発明に係る方法を実施するための1例を示す説明図、第4図はこの発明に係る方法を実施するための他の例を示す説明図、第5図は従来の説明図、第6図は制御手段の1例を示すブロック図、第7図はこの発明に係る方法を実施するための他の例を示す装置概要図である。 Flowchart Figure 1 is showing an example for carrying out the method according to the present invention, FIG. 2 is schematic diagram of a device showing an example for carrying out the method according to the present invention, FIG. 3 in the present invention explanatory view showing an example for carrying out the method according, FIG. 4 is an explanatory diagram showing another example for carrying out the method according to the present invention, FIG. 5 is a conventional illustration, FIG. 6 is a control block diagram showing an example of means, FIG. 7 is a device schematic view showing another example for carrying out the method according to the present invention. W……ウエハ、1……回転チャック、 2……ノズル、3……投光用ファイバー、 4……受光用ファイバー、 5……表面処理室、6……光電変換素子、 7……発光手段、8……制御手段、 9……排液管、10……赤外線ランプ、 11……紫外線ランプ、12……減圧配管。 W ...... wafer, 1 ...... rotating chuck, 2 ...... nozzle, 3 ...... light projecting fiber, 4 ...... light receiving fiber, 5 ...... surface treatment chamber, 6 ...... photoelectric conversion element, 7 ...... emitting means , 8 ...... control means, 9 ...... drain pipe, 10 ...... infrared lamp, 11 ...... UV lamp, 12 ...... vacuum pipe.

Claims (1)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】被処理基板を回転させながらその表面に洗浄液を供給して洗浄し、しかる後、被処理基板を洗浄時より高速に回転させて被処理基板表面に付着した洗浄液を振り切って脱液し、脱液した被処理基板に光照射して加熱し、乾燥する方法において、脱液処理時、被処理基板の周辺部表面に光を照射し、その表面からの反射光または透過光を検知し、その検知信号の信号レベルがほぼ一定になった時を脱液処理終了と判定して、その後乾燥処理を行なうようにしたことを特徴とする洗浄乾燥処理方法。 1. A washing by supplying a cleaning liquid to the surface while rotating the target substrate, and thereafter, de-shake off the cleaning liquid adhering to the surface of the substrate to be processed is rotated faster than when cleaning a substrate to be processed and the liquid, and light irradiation heat the substrate to be processed was dewatered, in a method of drying, during liquid removal process, by irradiating light to the periphery surface of the substrate, the reflected light or transmitted light from the surface washing drying processing method detected, to determine when the signal level of the detection signal becomes almost constant drainer processing and end, is characterized in that so as to subsequently perform the drying process.
JP61219969A 1986-09-17 1986-09-17 Washing drying processing method Expired - Lifetime JPH0695511B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61219969A JPH0695511B2 (en) 1986-09-17 1986-09-17 Washing drying processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61219969A JPH0695511B2 (en) 1986-09-17 1986-09-17 Washing drying processing method

Publications (2)

Publication Number Publication Date
JPS6373628A JPS6373628A (en) 1988-04-04
JPH0695511B2 true JPH0695511B2 (en) 1994-11-24

Family

ID=16743863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61219969A Expired - Lifetime JPH0695511B2 (en) 1986-09-17 1986-09-17 Washing drying processing method

Country Status (1)

Country Link
JP (1) JPH0695511B2 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6558964B2 (en) * 2000-12-27 2003-05-06 Lam Research Corporation Method and apparatus for monitoring a semiconductor wafer during a spin drying operation
KR101532824B1 (en) 2003-04-09 2015-07-01 가부시키가이샤 니콘 Exposure method and apparatus, and device manufacturing method
KR101597475B1 (en) 2003-04-11 2016-02-24 가부시키가이샤 니콘 Cleanup method for optics in immersion lithography
TWI474380B (en) * 2003-05-23 2015-02-21 尼康股份有限公司
JP5058550B2 (en) * 2003-05-23 2012-10-24 株式会社ニコン Exposure apparatus, exposure method, a device manufacturing method, and the liquid recovery method
KR101111364B1 (en) * 2003-10-08 2012-02-27 가부시키가이샤 니콘 Substrate carrying apparatus, substrate carrying method, exposure apparatus, exposure method, and method for producing device
TWI569308B (en) 2003-10-28 2017-02-01 尼康股份有限公司 Optical illumination device, exposure device, exposure method and device manufacturing method
TWI519819B (en) 2003-11-20 2016-02-01 尼康股份有限公司 Light beam converter, optical illuminating apparatus, exposure device, and exposure method
JP4194495B2 (en) 2004-01-07 2008-12-10 東京エレクトロン株式会社 Coating and developing apparatus
US7990516B2 (en) * 2004-02-03 2011-08-02 Nikon Corporation Immersion exposure apparatus and device manufacturing method with liquid detection apparatus
TWI505329B (en) 2004-02-06 2015-10-21 尼康股份有限公司 Optical illumination apparatus, light-exposure apparatus, light-exposure method and device manufacturing method
EP3203498A1 (en) 2004-06-09 2017-08-09 Nikon Corporation Exposure apparatus and device manufacturing method
US7463330B2 (en) * 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101285951B1 (en) 2004-10-26 2013-07-12 가부시키가이샤 니콘 Substrate processing method, exposure apparatus and method for manufacturing device
EP2660853B1 (en) 2005-05-12 2017-07-05 Nikon Corporation Projection optical system, exposure apparatus and exposure method
JP5267029B2 (en) 2007-10-12 2013-08-21 株式会社ニコン Illumination optical apparatus, exposure apparatus and device manufacturing method
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
JP6044849B2 (en) 2014-03-24 2016-12-14 コニカミノルタ株式会社 Processing apparatus and the particle fixing method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55102233A (en) * 1979-01-30 1980-08-05 Matsushita Electric Ind Co Ltd Removing method of dust
JPH045978B2 (en) * 1983-04-21 1992-02-04 Nippon Electric Co
JPS6325661B2 (en) * 1984-07-04 1988-05-26 Mitsubishi Electric Corp

Also Published As

Publication number Publication date
JPS6373628A (en) 1988-04-04

Similar Documents

Publication Publication Date Title
KR100262902B1 (en) Method and apparatus for developing treatment
US5829156A (en) Spin dryer apparatus
KR900005119B1 (en) Spinning proccessor
EP0618611B1 (en) Method and apparatus for washing substrates
US4902350A (en) Method for rinsing, cleaning and drying silicon wafers
KR100447012B1 (en) Periphery of the substrate also indusium removal method and apparatus for removing indusium
KR19990037548A (en) Application method
KR100707126B1 (en) Method of removing contamination adhered to surfaces and apparatus used therefor
JP4481394B2 (en) The method of cleaning device and cleaning a semiconductor substrate
KR920009982B1 (en) Apparatus and method for surface treating process of rotating wafers
KR100488378B1 (en) Wafer cleaning method and apparatus
KR950703729A (en) Optical end-point detection techniques of the material layer during the treatment step. (Optical endpoint detemination during processing of the material layers)
JPH069195B2 (en) Surface treatment method of a substrate
KR930007526A (en) Precision cleaning system and method according to the jet spray
EP0252439A3 (en) Method and apparatus for surface treating of substrates
JPH02130922A (en) Etching equipment for semiconductor substrate
JP2727481B2 (en) The method of cleaning a glass substrate for a liquid crystal element
JPH09109023A (en) Wafer polishing machine, thickness measuring unit, method of keeping wafer in water, and thickness measuring method
EP0893819B1 (en) Apparatus and method for washing substrate
KR930011129A (en) The substrate processing method and processing apparatus
US6431183B1 (en) Method for treating semiconductor substrates
US4637146A (en) Spin dryer
JPH0541371A (en) Manufacturing apparatus for semiconductor device
GB1490828A (en) Processing semiconductor devices
KR900000174B1 (en) Apparatus for washing and drying substrates