JPH11176727A - Projection aligner - Google Patents

Projection aligner

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Publication number
JPH11176727A
JPH11176727A JP34144597A JP34144597A JPH11176727A JP H11176727 A JPH11176727 A JP H11176727A JP 34144597 A JP34144597 A JP 34144597A JP 34144597 A JP34144597 A JP 34144597A JP H11176727 A JPH11176727 A JP H11176727A
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Prior art keywords
surface
substrate
position
liquid
ultrasonic
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JP34144597A
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Japanese (ja)
Inventor
Naomasa Shiraishi
直正 白石
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Nikon Corp
株式会社ニコン
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece
    • G03F7/70341Immersion

Abstract

PROBLEM TO BE SOLVED: To detect with high precision a position in an optical axis direction of a projection optical system on a surface of a substrate, even when wavelengths of aligned lights are substantially reduced and moreover the alignment is carried out in a liquid.
SOLUTION: A liquid 7 is supplied to a sidewall 8 so as to satisfy a gap between a lens 4 of a projection optical system which is closest to a wafer W and the wafer W. Ultrasonic waves are emitted from an ultrasonic emission system 5, and the ultrasonic waves reflected by an ultrasonic focusing position SS are received by an ultrasonic reception system 6. Based on a detection signal from the ultrasonic reception system 6, a defocusing amount from a best focusing position in a focusing position SS of ultrasonic waves is acquired. Based on the acquired defocusing amount, a sample ore pedestal 9 is driven in a Z-direction to control a focusing position.
COPYRIGHT: (C)1999,JPO

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は、例えば、半導体素子、液晶表示素子、又は薄膜磁気ヘッド等を製造するためのリソグラフィ工程に用いられる投影露光装置に関する。 BACKGROUND OF THE INVENTION The present invention is, for example, semiconductor devices, liquid crystal display devices, or a projection exposure apparatus used in a lithography process for manufacturing a thin film magnetic head, or the like.

【0002】 [0002]

【従来の技術】半導体素子等を製造する際に、フォトマスクとしてのレチクルのパターンの像を投影光学系を介して、基板としてのレジストが塗布されたウエハ(又はガラスプレート等)上の各ショット領域に転写するステッパー型、又はステップ・アンド・スキャン方式等の投影露光装置が使用されている。 When manufacturing of the Prior Art Semiconductor devices such as an image of a pattern of a reticle as a photomask via a projection optical system, each shot on the wafer on which the resist is applied as a substrate (or a glass plate or the like) stepper type of transfer, or step-and-scan method the projection exposure apparatus or the like is used in the region.

【0003】投影露光装置に備えられている投影光学系の解像度は、使用する露光波長が短く、投影光学系の開口数が大きいほど高くなる。 [0003] resolution of the projection optical system provided in the projection exposure apparatus, a short exposure wavelength to be used is higher the larger the numerical aperture of the projection optical system. そのため、集積回路の微細化に伴い投影露光装置で使用される露光波長は年々短波長化しており、投影光学系の開口数も増大してきている。 Therefore, the exposure wavelength used in the projection exposure apparatus with the miniaturization of the integrated circuit, is shortened year by year wavelength, it has increased numerical aperture of projection optical systems. そして、現在主流の露光波長は、KrFエキシマレーザの248nmであるが、更に短波長のArFエキシマレーザの193nmの使用も検討されている。 The mainstream exposure wavelength currently is the 248nm from a KrF excimer laser, it is also considered the use of more of the ArF excimer laser of short wavelength 193 nm.

【0004】また、露光を行う際には、解像度と同様に焦点深度も重要となる。 Further, when performing exposure, resolution as well as the depth of focus is also important. 解像度R、及び焦点深度δはそれぞれ以下の式で表される。 The resolution R, and the depth of focus δ are represented by the following expressions. R=k 1・λ/NA (1) δ=k 2・λ/NA 2 (2) ここで、λは露光波長、NAは投影光学系の開口数、k R = k 1 · λ / NA (1) δ = k 2 · λ / NA 2 (2) where, lambda is the exposure wavelength, NA is the numerical aperture of the projection optical system, k
1 ,k 2はプロセス係数である。 1, k 2 represent the process coefficients. 同じ解像度を得る場合には短い波長の露光光を用いた方が大きな焦点深度を得ることができる。 It can be preferable to use an exposure light of shorter wavelength obtain a large depth of focus in the case of obtaining the same resolution. しかしながら、投影光学系に使用される透過性の光学部材(硝材)の分光透過特性を考慮すると、現時点ではArFエキシマレーザの193nmより短い波長の露光光を透過できると共に、比較的大きなレンズを形成できる均一な硝材はほとんどない。 However, considering the spectral transmission characteristics of the transmissive optical member used for the projection optical system (glass material), in conjunction with currently capable of transmitting the exposure light of wavelength shorter than 193nm of ArF excimer laser, capable of forming a relatively large lens uniform glass material is little.

【0005】 [0005]

【発明が解決しようとする課題】上記の如く従来の投影露光装置(投影光学系)では、ArFエキシマレーザの193nmより短い波長の露光光を使用することは困難である。 In [0007] the conventional projection exposure apparatus thus (projection optical system), it is difficult to use exposure light of wavelength shorter than 193nm of ArF excimer laser. そこで、実質的に露光波長を短くする方法として、液浸法が提案されている。 Therefore, as a method for substantially shortening the exposure wavelength, immersion method has been proposed. これは、ウエハを所定の液体中に浸し、液体中での露光光の波長が、空気中の1 This immersing the wafer in a given liquid, the wavelength of the exposure light in the liquid, first in air
/n倍(nは液体の屈折率で通常1.2〜1.6程度) / N times (n is usually about 1.2 to 1.6 in the refractive index of the liquid)
になることを利用して解像度を向上し、焦点深度を増大するというものである。 Utilizing becomes possible to improve the resolution, is that increasing the depth of focus.

【0006】ところで、露光時には、露光範囲全体が投影光学系の焦点深度の範囲内に入る必要があるため、投影露光装置には、合焦機構(オートフォーカス機構)が設けられている。 [0006] Incidentally, during the exposure, it is necessary to entire exposure range is within the range of the depth of focus of the projection optical system, the projection exposure apparatus, the focusing mechanism (auto-focus mechanism). これは、一般に露光すべきウエハの表面に斜入射で光ビームを入射し、その反射光を対面の光学系で受光してウエハ表面の合焦状態を検出し、ウエハを上下に移動して合焦位置へ追い込むというものである。 This is generally a light beam incident at oblique incidence to the surface of the wafer to be exposed, to detect the focus state of the wafer surface by receiving reflected light by the face of the optical system, moving the wafer up and down if it is that trumps to focus position.

【0007】露光されるウエハ表面には感光膜(フォトレジスト)が塗布されており、このフォトレジストにパターンが転写される。 [0007] The wafer surface to be exposed and a photosensitive layer (photoresist) is applied, the pattern is transferred to the photoresist. そこで、このフォトレジスト表面を投影光学系の焦点位置に一致させることが望ましく、 Therefore, it is desirable to match the photo resist surface to the focal position of the projection optical system,
フォトレジスト表面の位置をを検出する必要がある。 It is necessary to detect the position of the photo-resist surface. 従来の投影露光装置では、ウエハが配置される空間は空気、又は窒素等の気体で満たされている。 In the conventional projection exposure apparatus, a space in which the wafer is placed is filled with a gas such as air or nitrogen. そして、例えば空気の屈折率は1であり、ウエハ表面に塗布されたフォトレジストの屈折率は、約1.7である。 Then, for example, the refractive index of air is 1, the refractive index of the photoresist coated on the wafer surface is about 1.7. 従って、空気−フォトレジスト界面における光の反射率は、フレネルの式より以下のように計算される。 Therefore, air - reflectance of light at the photoresist interface can be calculated as follows from the Fresnel equations. 反射率={(1−1.7)/(1+1.7)} 2 ×100 =6.7(%) (3) 空気−フォトレジスト界面では、合焦検出用の光束の比較的多くが反射し、フォトレジスト表面の位置を検出することができる。 Reflectance = {(1-1.7) / (1 + 1.7)} 2 × 100 = 6.7 (%) (3) Air - The photoresist interface, a relatively large reflection of the light flux for focus detection and, it is possible to detect the position of the photo-resist surface.

【0008】しかし、液浸法を採用した投影露光装置の場合には、ウエハが配置される空間は液体で満たされることになる。 However, in the case of the projection exposure apparatus employing a liquid immersion method, the space in which the wafer is placed will be filled with liquid. 例えば液体が水である場合、その屈折率は1.3であり、水−フォトレジスト界面における光の反射率は、フレネルの式より以下のように計算される。 For example, if the liquid is water, the refractive index is 1.3, water - reflectance of light at the photoresist interface can be calculated as follows from the Fresnel equations. 反射率={(1.3−1.7)/(1.3+1.7)} 2 ×100 =1.8(%) (4) 水−フォトレジスト界面では、空気−フォトレジスト界面に比べ空間とフォトレジストとの屈折率の差が著しく小さくなるため、合焦検出用の光束の反射率が低下し、 Reflectance = {(1.3-1.7) / (1.3 + 1.7)} 2 × 100 = 1.8 (%) (4) Water - The photoresist interface, air - space compared to photoresist interface and the difference in refractive index between the photoresist is significantly reduced, the reflectance of the light flux for focus detection is decreased,
フォトレジスト表面の位置を正確に検出することが困難となる。 It is difficult to accurately detect the position of the photo resist surface.

【0009】本発明は斯かる点に鑑み、露光光の波長を短波長化し、より微細なパターンを転写できる投影露光装置を提供することを目的とする。 [0009] The present invention has been made in view of the points mow 斯, the wavelength of the exposure light and shorter wavelength, and an object thereof is to provide a projection exposure apparatus capable of transferring a finer pattern. さらに、液体中で感光材料が塗布された基板上に露光が行われる場合であっても、その感光材料の表面の投影光学系の光軸方向の位置を高精度に検出することができる投影露光装置を提供することをも目的とする。 Furthermore, even when exposed on the substrate with a photosensitive material in a liquid is applied is performed, a projection exposure capable of detecting the position of the optical axis of the projection optical system of the surface of the photosensitive material with high accuracy the object of the invention is to provide a device.

【0010】 [0010]

【課題を解決するための手段】本発明の投影露光装置は、マスク(R)のパターン像を投影光学系(PL)を介して基板(W)上に転写する投影露光装置において、 Projection exposure apparatus of the present invention SUMMARY OF THE INVENTION, in a projection exposure apparatus for transferring onto a substrate (W) via a mask pattern image (R) projection optical system (PL),
その基板(W)の表面に所定の液体(7)を供給する液浸装置(2,8)と、その基板(W)の表面に液体(7)を介して超音波を送出し、その表面で反射される超音波を検出することによってその表面のその投影光学系(PL)の光軸方向の位置を検出する超音波方式の面位置検出装置(5,6)とを備えたものである。 The immersion device (2,8) for supplying a predetermined liquid (7) on the surface of the substrate (W), and transmits the ultrasonic waves through the liquid (7) on the surface of the substrate (W), the surface it is obtained by a surface position detecting apparatus of ultrasonic type (5,6) for detecting the position of the optical axis of the projection optical system (PL) of the surface by detecting the ultrasonic waves reflected in .

【0011】斯かる本発明の投影露光装置によれば、マスク(R)のパターン像を液体(7)を介して基板(W)の表面に露光するため、基板表面における露光光の波長を空気中における波長の1/n倍(nは液体(7)の屈折率)に短波長化できる。 According to the projection exposure apparatus of the present invention, to expose the surface of the substrate (W) to the pattern image of the mask (R) through a liquid (7), the air wavelength of the exposure light on the substrate surface 1 / n times the wavelength in the medium (n is the refractive index of the liquid (7)) can be shortened wavelength to. また、超音波方式の面位置検出装置(5,6)により基板(W)の表面の光軸方向の位置を高精度に検出するため、光学式の面位置検出装置では面位置の検出が困難な液体(7)中においても、その位置を高精度に検出することができる。 Further, in order to detect the position of the optical axis direction of the surface of the substrate by the surface position detecting apparatus of ultrasonic type (5,6) (W) with high accuracy, difficult to detect surface position in the optical surface position detecting device even in a liquid (7), it is possible to detect the position with high precision.

【0012】また、基板(W)の表面に感光材料(P [0012] In addition, the light-sensitive material on the surface of the substrate (W) (P
R)が塗布されている際に、面位置検出装置(5,6) When R) is applied, the surface position detecting apparatus (5, 6)
は、その感光材料(PR)の表面の投影光学系(3, The projection optical system of the surface of the photosensitive material (PR) (3,
4)の光軸方向の位置を検出することが望ましい。 It is desirable to detect the position in the optical axis direction of 4). この場合、投影光学系(3,4)の像面をその感光材料(P In this case, the photosensitive material an image plane of the projection optical system (3, 4) (P
R)の表面に合わせ込むことができる。 Can be intended to adjust to the surface of R). また、投影光学系(PL)の基板(W)側の光学素子(4)の先端部とその基板(W)の表面との間を満たすように液体(7) The projection optical system board (PL) (W) optical element side (4) Liquid (7) so as to satisfy the between the tip portion and its surface of the substrate (W) of
が供給されることが望ましい。 There it is desired to be supplied. この場合、基板(W)表面における露光光の波長を、空気中における露光光の波長の1/n倍(nは液体(7)の屈折率)に短波長化できる。 In this case, the wavelength of the exposure light on the substrate (W) surface, 1 / n times the wavelength of the exposure light in air (n is the refractive index of the liquid (7)) can be shortened wavelength to. さらに、投影光学系(PL)の鏡筒(3)が液体(7)に接触しないため、鏡筒(3)が腐食しにくくなるという利点がある。 Furthermore, since the barrel of the projection optical system (PL) (3) does not come into contact with the liquid (7), there is an advantage that the barrel (3) is less likely to corrode.

【0013】また、その液体(7)は、水(屈折率1. Further, the liquid (7) is water (refractive index 1.
3)、又は有機溶媒(例えばアルコール(エタノール(屈折率1.36)等)、セダー油(屈折率1.52) 3), or an organic solvent (e.g. an alcohol (ethanol (refractive index 1.36), etc.), cedar oil (refractive index 1.52)
等)である。 And the like). この場合に液体(7)として水を用いる場合には、その入手が容易であるという利点がある。 When water is used as the liquid (7) in this case, there is an advantage that is easily available. また、液体(7)として有機溶媒を用いる場合には、投影光学系(PL)の鏡筒(3)が腐食しにくくなるという利点がある。 In the case of using an organic solvent as a liquid (7) has the advantage that the lens barrel of the projection optical system (PL) (3) is less likely to corrode. さらに、液体(7)としてセダー油を用いる場合には、その屈折率が約1.5と大きく、露光光をより短波長化することができる。 Furthermore, in the case of using cedar oil as a liquid (7) may be its refractive index is as large as about 1.5, a shorter wavelength more exposure light.

【0014】また、基板(W)を保持してこの基板(W)を投影光学系(PL)の光軸に垂直な平面上で位置決めする基板ステージ(10)と、面位置検出装置(5,6)の検出結果に基づいてその基板(W)の投影光学系の光軸方向(3,4)の位置を制御する高さ制御ステージ(9)とを備えることが望ましい。 Further, the substrate (W), that hold the projection optical system the substrate (W) a substrate stage for positioning on a plane perpendicular to the optical axis of the (PL) (10), the surface position detecting apparatus (5, providing the position and height control stage for controlling (9) in the direction of the optical axis of the projection optical system of the substrate (W) (3, 4) is desirable based on the detection result of 6). この場合、 in this case,
投影光学系(3,4)の像面に対して基板(W)の表面を高精度に合わせ込むことができる。 It can be the image plane of the projection optical system (3,4) Komu combined surface of the substrate (W) with high accuracy.

【0015】 [0015]

【発明の実施の形態】以下、本発明の実施の形態の一例につき図1〜図3を参照して説明する。 BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, will be explained with reference to FIGS per an embodiment of the present invention. 図1(a)は本例の投影露光装置の概略構成を示し、この図1(a)において、露光光源としてのArFエキシマレーザ光源、 Figure 1 (a) shows a schematic arrangement of a projection exposure apparatus of this embodiment, in the FIGS. 1 (a), ArF excimer laser light source as an exposure light source,
オプティカル・インテグレータ、視野絞り、コンデンサレンズ等を含む照明光学系1から射出された波長193 An optical integrator, a field stop, the wavelength emitted from the illumination optical system 1 including a condenser lens or the like 193
nmの紫外パルス光よりなる露光光ILは、レチクルR nm consisting ultraviolet pulse light of the exposure light IL, a reticle R
に設けられたパターンを照明する。 Illuminating a pattern provided on. レチクルRのパターンは、両側(又はウエハ側に片側)テレセントリックな投影光学系PLを介して所定の投影倍率β(βは例えば1/4,1/5等)でフォトレジストPRが塗布されたウエハW上の露光領域に縮小投影される。 Wafer pattern of the reticle R is to both sides (or wafer-side side) through a telecentric projection optical system PL a predetermined projection magnification beta (beta is e.g. 1 / 4,1 / 5, etc.) is a photoresist PR is coated It is subjected to the reduction projection exposure area on the W. なお、露光光ILとしては、KrFエキシマレーザ光(波長248n As the exposure light IL, KrF excimer laser beam (wavelength: 248n
m)、F 2エキシマレーザ光(波長157nm)や水銀ランプのi線(波長365nm)等を使用してもよい。 m), may be used F 2 excimer laser light (wavelength 157 nm) or a mercury lamp i line (wavelength 365 nm) or the like.
以下、投影光学系PLの光軸AXに平行にZ軸を取り、 Hereinafter, parallel to take the Z-axis to the optical axis AX of the projection optical system PL,
Z軸に垂直な平面内で図1(a)の紙面に垂直な方向に沿ってY軸を取り、紙面に平行な方向に沿ってX軸を取って説明する。 Take the Y-axis along a direction perpendicular to the plane of FIG in a plane perpendicular to the Z axis 1 (a), taking X-axis will be described along a direction parallel to the paper surface.

【0016】レチクルRはレチクルステージRST上に保持され、レチクルステージRSTにはX方向、Y方向、回転方向に微動できる機構が組み込まれている。 [0016] The reticle R is held on a reticle stage RST, the reticle stage RST X direction, Y direction, mechanism capable fine movement in the rotation direction is incorporated. レチクルステージRSTの2次元的な位置、及び回転角はレーザ干渉計(不図示)によってリアルタイムに計測されている。 2-dimensional positions of the reticle stage RST, and the angle of rotation are measured in real time by a laser interferometer (not shown). 一方、ウエハWはウエハホルダ(不図示)を介して試料台9上に保持され、試料台9はウエハWのフォーカス位置(Z方向の位置)及び傾斜角を制御するZ On the other hand, the wafer W is held on a sample stage 9 via a wafer holder (not shown), the sample stage 9 controls the focus position (Z-direction position) and the inclination angle of the wafer W Z
ステージ10上に固定されている。 And it is fixed on the stage 10. 試料台9上には円筒状の側壁8が設けられおり、その内部は液体7で満たされている。 On the sample stage 9 is cylindrical side wall 8 is provided, the inside is filled with a liquid 7. 液体7は、ポンプ等からなる液体供給回収系2により、ノズル2aを介して露光前に側壁8内に供給され、露光後に回収される。 Liquid 7 is the liquid supply and recovery system 2 consisting of a pump or the like, is fed into the side wall 8 before exposure through the nozzle 2a, recovered after exposure. なお、本例の投影露光装置では液体7として水(屈折率1.3)を使用しており、 Incidentally, in the projection exposure apparatus of this example we use water (refractive index 1.3) as the liquid 7,
光の波長は水中において空気中の1/1.3倍になるため、ArFエキシマレーザ(波長193nm)よりなる露光光の波長は実質的に約148nmに短波長化される。 Since the wavelength of light becomes 1 / 1.3 times in the air in the water, the wavelength of the exposure light of ArF excimer laser (wavelength 193 nm) is shorter wavelength substantially about 148 nm.

【0017】また、投影光学系PLの鏡筒3は金属製であり、液体7による腐食を防止するため、本例では、投影光学系PLと液体7との接触部分は、ウエハWに最も近いレンズ4のみとしている。 Further, the barrel 3 of the projection optical system PL is made of metal, to prevent corrosion by the liquid 7, in this example, the contact portion between the projection optical system PL and the liquid 7 is closest to the wafer W It is the only lens 4. また、投影光学系PLの鏡筒3の側面には、超音波射出系5と超音波受信系6とよりなる焦点位置検出系(以下「AFセンサ5,6」と呼ぶ)が取り付けられている。 In addition, the side surface of the barrel 3 of the projection optical system PL, and an ultrasonic injection system 5 and the ultrasonic receiving system 6 and more become the focus position detecting system (hereinafter referred to as "AF sensor 5,6 ') is attached .

【0018】図1(b)は図1(a)の側壁8近傍の拡大図であり、この図1(b)において、側壁8にはウエハWの試料台9上への搬送、又は試料台9からの搬出の際に使用する開閉自在の扉8aが設けられている。 [0018] 1 (b) is an enlarged view of a side wall 8 near the FIG. 1 (a), in the FIG. 1 (b), the conveyance to the upper sample stage 9 of the wafer W on the side wall 8, or the sample stage openable door 8a is provided to be used when unloading from 9. また、液体供給回収系2のノズル2aは、液体の供給、及び回収の際に上下に駆動することができる構成となっている。 The nozzle 2a of the liquid supply and recovery system 2, the supply of the liquid, and has a configuration which can be driven up and down during the recovery.

【0019】図1(a)に戻り、Zステージ10は投影光学系PLの像面と平行なXY平面に沿って移動するX [0019] Returning to FIG. 1 (a), Z stage 10 is moved along the image plane parallel to the XY plane of the projection optical system PL X
Yステージ11上に固定され、XYステージ11は不図示のベース上に載置されている。 Fixed on the Y stage 11, XY stage 11 is placed on a base (not shown). Zステージ10は、ウエハWのフォーカス位置(Z方向の位置)、及び傾斜角を制御してウエハW上のフォトレジストPR表面をオートフォーカス方式、及びオートレベリング方式で投影光学系PLの像面に合わせ込み、XYステージ11はウエハWのX方向、及びY方向の位置合わせを行う。 Z stage 10, the focus position of the wafer W (Z direction position), and by controlling the tilt angle of the photoresist PR surface of the wafer W autofocusing, and the image plane of the projection optical system PL in the auto-leveling system the combined narrowing, XY stage 11 performs X direction of the wafer W, and the alignment in the Y direction. 試料台9(ウエハW)の2次元的な位置、及び回転角は、移動鏡12の位置としてレーザ干渉計13によってリアルタイムに計測されている。 Two-dimensional position of the sample stage 9 (wafer W), and the angle of rotation are measured in real time by the laser interferometer 13 as the position of the moving mirror 12. この計測結果に基づいて主制御系14からウエハステージ駆動系15に制御情報が送られ、Zステージ10、XYステージ11の動作が制御され、露光時にはウエハW上の各ショット領域が順次露光位置に移動し、レチクルRのパターンが各ショット領域へ露光転写される。 Control information from main control system 14 to the wafer stage drive system 15 based on the measurement result is transmitted, the operation of the Z stage 10, XY stage 11 is controlled to sequentially exposed positions each shot area on the wafer W during exposure moving, the pattern of the reticle R is exposed and transferred to each shot area.

【0020】次に、本例の投影露光装置のAFセンサ5,6について説明する。 Next, a description will be given AF sensors 5 and 6 of the projection exposure apparatus of this embodiment. 図2(a)は、本例の投影光学系の下部近傍を拡大して示し、この図2(a)において、超音波射出系5には超音波発生素子5a、及び超音波集束素子5bが設けられている。 2 (a) shows an enlarged near the lower portion of the projection optical system of this embodiment. In FIG. 2 (a), the ultrasonic injection system 5 ultrasonic generating elements 5a, and the ultrasonic focusing element 5b is It is provided. 圧電素子等からなる超音波発生素子5aから射出された周波数50MHz〜 Frequency emitted from the ultrasonic generating element 5a formed of a piezoelectric element or the like 50MHz~
200MHz程度の超音波は、超音波集束素子5bによりウエハWに塗布されたフォトレジストPR表面上の集束位置SSに集束され、集束位置SSで反射して超音波受信系6に入射する。 Ultrasonic about 200MHz is focused to the focusing position SS on the photoresist PR surface applied on the wafer W by the ultrasonic focusing element 5b, is reflected by the focusing position SS enters the ultrasonic receiving system 6. 超音波受信系6には超音波受信素子6a、超音波集束素子6b、及び振動できる遮音板6 The ultrasonic receiving system 6 ultrasound receiving elements 6a, ultrasonic focusing element 6b, and the vibration may sound insulation plate 6
cが設けられており、超音波受信系6に入射した超音波は超音波集束素子6bにより集束され、遮音板6cの開口を介して超音波受信素子6aに入射する。 c is provided, the ultrasonic waves entering the ultrasound receiving system 6 is focused by the ultrasound focusing element 6b, through the opening of the sound insulation plate 6c is incident on the ultrasonic receiving element 6a. 超音波受信素子6aの検出信号は主制御系14に供給される。 Detection signal of the ultrasonic receiver element 6a is supplied to the main control system 14. なお、遮音板6cの中央部には超音波を通過させる開口が設けられて、主制御系14が遮音板駆動機構6dにより遮音板6cを横シフト(又は振動)させて超音波受信素子6aの検出信号が最大になる位置を検出する。 Note that the central portion of the sound insulation plate 6c is provided an opening for passing the ultrasonic wave, the main control system 14 is a sound insulating plate 6c lateral shift (or vibration) is caused by the ultrasonic wave receiving element 6a by the sound insulating plate drive mechanism 6d detection signal to detect the position of maximum. 又は、 Or,
遮音板6cを振動させるのに同期した信号で超音波受信素子6aの検出信号を同期検波してもよい。 The detection signal of the ultrasonic receiving elements 6a sound insulating plate 6c in synchronism signal to oscillate may be synchronously detected.

【0021】図2(b)は、フォトレジストPR表面上の超音波の集束位置SS付近を拡大して示し、この図2 [0021] FIG. 2 (b), an enlarged view of the ultrasonic focus position near the SS of the photoresist PR surface, FIG. 2
(b)において、ウエハW上には感光用のフォトレジストPRが塗布されている。 (B), the can on the wafer W photoresist PR for the photosensitive is applied. 従来の光学式で斜入射方式のAFセンサによりフォトレジストPR表面上の位置SS Position SS on the photoresist PR surface by the AF sensor oblique incidence type in conventional optical
を検出しようとしても、液体7とフォトレジストPRの屈折率が同程度で反射率が極めて低くなり、光は経路1 The even be detected, the refractive index of the liquid 7 and the photoresist PR reflectance is very low at the same level, the light path 1
7に沿ってウエハWの表面まで進むため、検出される位置SS'はフォトレジストPRの表面上に位置せず、投影光学系PLの像面にはウエハWの基板自体の表面が合わせ込まれる。 To proceed to the surface of the wafer W along the 7, position SS to be detected 'is not located on the surface of the photoresist PR, is incorporated mating surface of the substrate itself of the wafer W is the image plane of the projection optical system PL . 本例のAFセンサ5,6の超音波は経路16に沿って進みフォトレジストPRの表面で反射されるため、フォトレジストPR表面上の位置SSが正確に検出され、高精度にフォトレジストPR表面を像面に合焦させることができる。 Ultrasonic AF sensors 5 and 6 of this example because it is reflected by the surface of the photoresist PR travels along path 16, the position SS on the photoresist PR surface is detected accurately, the photoresist PR surface with high precision it can be focused to the image plane.

【0022】また、フォトレジストPR表面のZ方向の位置は、従来の光学式で斜入射方式のAFセンサと同様の原理によって超音波受信素子6a上での超音波の集束位置の横シフト量から検出される。 Further, the position in the Z direction of the photoresist PR surface is the lateral shift amount of the ultrasound focusing position of the on the ultrasonic receiving elements 6a AF sensor similar to the principles of the oblique incidence type in conventional optical It is detected. 即ち、ウエハWが図2(b)中の下方(−Z方向)にずれれば図2(a)の超音波受信素子6a上での集束位置が上方にずれ、ウエハWが図2(b)中の上方にずれれば超音波受信素子6 That is, the focusing position on the ultrasonic receiving element 6a of if the wafer W is Zurere downward (-Z direction) in FIG. 2 (b) FIGS. 2 (a) is shifted upwards, the wafer W in FIG. 2 (b if Zurere upward in) ultrasonic receiving element 6
a上での集束位置は下方にずれるため、この横シフト量よりフォトレジストPRの表面のフォーカス位置の変化量を求めることができる。 Focusing position on a since shifted downward, it is possible to determine the amount of change in the focus position of the surface of the photoresist PR than the lateral shift amount. そのため、予めベストフォーカス位置はテストプリント等によって定めておき、そのときに遮音板6cの開口の中心(又は振動中心)と超音波の集束位置の中心とを合わせておけばよい。 Therefore, it is sufficient to advance the best focus position is determined in advance by test printing or the like, combined with the center of (or vibration center) and the focusing position of the ultrasound of the opening of the sound insulation plate 6c at that time.

【0023】図3は、一例として超音波受信系6からの検出信号を同期検波して得られるフォーカス信号DとフォトレジストPR表面のフォーカス位置Zとの関係を示す。 FIG. 3 shows the relationship between the focus position Z of the focusing signal D and the photoresist PR surface obtained by synchronously detecting a detection signal from the ultrasonic receiving system 6 as an example. 主制御系14内で、超音波受信装置6aからの検出信号を、遮音板6cの駆動信号で同期整流することによって、フォトレジストPR表面での超音波の集束位置S In the main control system within 14, the detection signal from the ultrasonic receiving device 6a, by synchronous rectification by the drive signal of the sound insulation plate 6c, ultrasound focusing position S in the photoresist PR surface
Sに対応して、フォーカス位置Zに所定範囲でほぼ比例して変化するフォーカス信号Dが生成される。 In response to S, focus signal D which changes substantially proportionally in a predetermined range to the focus position Z is generated. 本例では、超音波の集束位置SSに対応するフォーカス信号D In this example, focus signal D corresponding to the focusing position SS ultrasound
は、集束位置SSが投影光学系PLの像面(ベストフォーカス位置)に合致しているときに0になるようにキャリブレーションが行われており、主制御系14は、フォーカス信号Dよりデフォーカス量(ずれ量)を求めることができる。 Are calibration is performed in such that 0 when focusing position SS meets the image plane of the projection optical system PL (best focus position), the main control system 14, the defocus from the focus signal D You can determine the amount (shift amount). ウエハWのフォーカス位置が上方にある場合には、Zステージ10(ウエハW)を下方に移動し、 When the focus position of the wafer W is above moves the Z stage 10 (wafer W) downward,
逆にフォーカス位置が下方にある場合には、Zステージ10(ウエハW)を上方に移動して露光を行うことになる。 If the contrary to the focus position is below would perform exposure by moving the Z stage 10 (wafer W) upward.

【0024】なお、本例では液体7として水(屈折率1.3)を使用したが、液体7として有機溶媒(例えばアルコール、セダー油等)を用いることもできる。 [0024] In this example and using water (refractive index 1.3) as the liquid 7, it is also possible to use an organic solvent (e.g. alcohol, cedar oil, etc.) as the liquid 7. この場合には、投影光学系PLの鏡筒3が腐食しにくくなるという利点がある。 In this case, it is advantageous in that the barrel 3 of the projection optical system PL is less likely to corrode. また、セダー油(屈折率1.5)を用いる場合には、その屈折率が1.5と大きく、露光光を実質的により短波長化することができる。 In the case of using cedar oil (refractive index 1.5), can be the refractive index is as large as 1.5, a shorter wavelength by substantially the exposure light.

【0025】なお、フォーカス位置の検出については、 [0025] It should be noted that, for the detection of the focus position,
超音波射出系5に複数の開口を有する遮音板を配置し、 Ultrasonic injection system 5 arranged sound insulating plate having a plurality of openings,
フォトレジスト表面の複数点での各フォーカス位置を検出するようにしてもよく、あるいは、大きな開口を有する遮音板を超音波射出系5内に配置し、且つ複数の開口を有する遮音板を超音波受信系6内に配置して、同様に複数点での各フォーカス位置を検出するようにしてもよい。 The photoresist surface may be configured to detect the respective focus positions at a plurality of points of, or the sound insulating plate having a large opening placed in an ultrasonic injection system 5, and an ultrasonic sound insulating plate having a plurality of openings disposed in the receiving system 6, likewise may be detected each focus position at a plurality of points.

【0026】なお、上記の実施の形態では、超音波を用いてウエハのフォトレジスト表面のフォーカス位置を検出したが、超音波を用いてフォトレジスト表面の傾斜角を検出するレベリングセンサを用いてもよい。 [0026] In the embodiment described above, detects the focus position of the photo resist surface of the wafer using ultrasonic, be a leveling sensor for detecting the inclination angle of the photoresist surface using ultrasonic good. このレベリングセンサでは、ウエハの表面にほぼ平行に進む超音波を照射して、反射される超音波の集音位置を検出すればよい。 This leveling sensor, the surface of the wafer is irradiated with ultrasonic waves traveling almost parallel, may be detected sound collection position of the ultrasonic wave reflected.

【0027】なお、本発明は上述の実施の形態に限定されず、本発明の要旨を逸脱しない範囲で種々の構成を取り得ることは勿論である。 [0027] The present invention is not limited to the above embodiments, it may take various arrangements without departing from the gist of the invention.

【0028】 [0028]

【発明の効果】本発明の投影露光装置によれば、マスクのパターン像を液体を介して基板の表面に露光するため、基板表面における露光光の波長を実質的に空気中における波長の液体の屈折率の逆数倍に短波長化できる。 According to the projection exposure apparatus of the present invention, to expose the surface of the substrate a pattern image of the mask through a liquid, a wavelength at substantially air wavelength of the exposure light on the substrate surface of the liquid it shorter wavelength in reciprocal of the refractive index.
また、超音波方式の面位置検出装置により基板表面の光軸方向の位置を検出するため、光学式の面位置検出装置では面位置の検出が困難な液体中においても、その位置を高精度に検出することができる。 Further, in order to detect the position of the optical axis direction of the substrate surface by the surface position detecting apparatus of an ultrasonic type, even in the difficult liquids detection of surface position in the optical type surface position detecting device, the position with high precision it is possible to detect.

【0029】また、面位置検出装置が、感光材料の表面の投影光学系の光軸方向の位置を検出する場合には、その検出情報に基づいて投影光学系の像面に対してその感光材料の表面を高精度に合わせ込むことができる。 Further, when the surface position detecting system detects the position of the optical axis of the projection optical system of the surface of the photosensitive material, the photosensitive material to the image plane of the projection optical system based on the detected information it can intended to adjust the surface of a high accuracy. また、投影光学系の基板側の光学素子の先端部とその基板の表面との間を満たすように液体が供給される場合には、露光光を空気中の1/n倍(nは液体の屈折率)に短波長化できる、また、投影光学系の鏡筒が液体に接触しないため、投影光学系の鏡筒が腐食しにくくなるという利点がある。 Further, when the liquid is supplied so as to satisfy the between the tip and the surface of the substrate of the optical element on the substrate side of the projection optical system, the exposure light is 1 / n times (n in the air in the liquid it shorter wavelength on the refractive index), in addition, since the barrel of the projection optical system is not in contact with the liquid, there is an advantage that the lens barrel of the projection optical system is less likely to corrode.

【0030】また、液体が、水である場合には、その入手が容易であるという利点がある。 Further, the liquid, if water has the advantage that the availability is easy. 液体が、有機溶媒(例えばアルコール、セダー油等)である場合には、投影光学系の鏡筒が腐食しにくいという利点がある。 Liquid, when it is an organic solvent (e.g. alcohol, cedar oil, etc.), the lens barrel of the projection optical system is advantageous in that it is difficult to corrode. さらに、液体としてセダー油を用いる場合には、その屈折率が1.5と水(屈折率1.3)等に比べて大きく、露光光をより短波長化することができる。 Furthermore, in the case of using cedar oil as a liquid may be a refractive index greater than 1.5 and water (refractive index 1.3) or the like, a shorter wavelength more exposure light.

【0031】また、基板を保持してこの基板を投影光学系の光軸に垂直な平面上で位置決めする基板ステージと、面位置検出装置の検出結果に基づいてその基板の投影光学系の光軸方向の位置を制御する高さ制御ステージとを備える場合には、投影光学系の像面を基板表面上の露光位置に合わせ込むことができる。 Further, a substrate stage for positioning on a plane perpendicular to the optical axis of the substrate projection optical system while holding the substrate, the optical axis of the projection optical system of the substrate based on a detection result of the surface position detecting device If and a height control stage for controlling the direction of the position can intended to adjust the image plane of the projection optical system in the exposure position on the substrate surface.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】(a)は本発明の実施の形態の一例の投影露光装置を示す概略構成図、(b)は図1(a)の側壁8近傍を示す拡大図である。 1 (a) is an example schematic diagram showing a projection exposure apparatus of the embodiment of the present invention, is an enlarged view showing a side wall 8 near the (b) Fig. 1 (a).

【図2】(a)は図1(a)の投影露光装置下部の構成を示す部分拡大図、(b)は図2(a)のB部の拡大図である。 2 (a) is a partially enlarged view showing a projection exposure apparatus bottom of the configuration of FIG. 1 (a), an enlarged view of B portion of (b) FIGS 2 (a).

【図3】ウエハW上のフォトレジスト表面のフォーカス位置Zとフォーカス信号Dとの関係を示す図である。 3 is a diagram showing the relationship between the focus position Z and the focus signal D of the photoresist surface on the wafer W.

【符号の説明】 DESCRIPTION OF SYMBOLS

W ウエハ R レチクル PL 投影光学系 1 照明光学系 2 液体供給回収系 3 鏡筒 4 レンズ 5 超音波射出系 6 超音波受信系 7 液体 8 側壁 9 試料台 10 Zステージ 14 主制御系 15 ウエハステージ駆動系 W wafer R reticle PL projection optical system 1 the illumination optical system 2 the liquid supply and recovery system 3 barrel 4 lens 5 ultrasonic injection system 6 ultrasonic receiving system 7 Liquid 8 side walls 9 sample stage 10 Z stage 14 main control system 15 wafer stage drive system

Claims (5)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 マスクパターンを投影光学系を介して基板上に転写する投影露光装置において、 前記基板の表面に所定の液体を供給する液浸装置と、 前記基板の表面に前記液体を介して超音波を送出し、前記表面で反射される超音波を検出することによって前記表面の前記投影光学系の光軸方向の位置を検出する超音波方式の面位置検出装置と、 を備えたことを特徴とする投影露光装置。 In a projection exposure apparatus for transferring onto a substrate through a 1. A mask pattern projection optical system, and an immersion device for supplying a predetermined liquid to a surface of said substrate, through said liquid on the surface of the substrate sends ultrasonic waves, that and a surface position detecting apparatus of ultrasonic type that detects the position of the optical axis of the projection optical system of the surface by detecting the ultrasonic wave reflected by the surface projection exposure apparatus according to claim.
  2. 【請求項2】 前記基板の表面に感光材料が塗布されている際に、 前記面位置検出装置は、前記感光材料の表面の前記投影光学系の光軸方向の位置を検出することを特徴とする請求項1記載の投影露光装置。 When wherein the photosensitive material to the surface of the substrate is coated, the surface position detecting apparatus, and characterized by detecting a position of the optical axis of the projection optical system of the surface of the photosensitive material the projection exposure apparatus according to claim 1.
  3. 【請求項3】 前記投影光学系の前記基板側の光学素子の先端部と前記基板の表面との間を満たすように前記液体が供給されることを特徴とする請求項1、又は2記載の投影露光装置。 Wherein the claim 1 wherein the liquid to fill between the tip and the substrate surface of the substrate side of the optical element of the projection optical system is characterized in that it is supplied, or 2, wherein projection exposure apparatus.
  4. 【請求項4】 前記液体は、水、又は有機溶媒であることを特徴とする請求項1、2、又は3記載の投影露光装置。 Wherein said liquid is water, or a projection exposure apparatus according to claim 1, 2, or 3, wherein the organic solvent.
  5. 【請求項5】 前記基板を保持して該基板を前記投影光学系の光軸に垂直な平面上で位置決めする基板ステージと、 前記面位置検出装置の検出結果に基づいて前記基板の前記投影光学系の光軸方向の位置を制御する高さ制御ステージと、を備えたことを特徴とする請求項1〜4の何れか一項記載の投影露光装置。 5. A substrate stage for positioning on a plane perpendicular to the substrate while holding the substrate to the optical axis of the projection optical system, the projection optical of the substrate based on a detection result of the surface position detecting device system projection exposure apparatus of any one of claims 1 to 4, the height control stage for controlling the position of the optical axis direction, characterized by comprising a.
JP34144597A 1997-12-11 1997-12-11 Projection aligner Withdrawn JPH11176727A (en)

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