JP2003068600A - Aligner and cooling method of substrate chuck - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a high accuracy high throughput aligner by suppressing slip of a substrate with respect to a chuck, and a cooling method of the chuck in the aligner. SOLUTION: When the temperature of a wafer chuck 14 increases and the temperature difference between the wafer chuck 14 and a wafer 13 becomes unallowable, the wafer chuck 14 is replaced from a wafer inching stage 15 to a chuck supporting base 20 by means of a chuck replacing hand. Temperature of the wafer chuck 14 is regulated by the chuck supporting base 20 and returned back to a reference temperature. A temperature regulating means is brought into contact with a plate, i.e., the chuck supporting base 20, subjected to temperature regulation by cooling water or a Peltier element through electrostatic at chuck.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cooling a substrate chuck, such as a wafer chuck, which is mounted on a stage such as a wafer stage and sucks and fixes a wafer. In particular, the present invention relates to an exposure apparatus for manufacturing a device such as a semiconductor, which cools a substrate chuck or a stage without applying vibration during exposure, and a method for cooling a substrate chuck in the exposure apparatus.

[0002]

2. Description of the Related Art FIG. 9 is a diagram for explaining positioning of a mask and a wafer in an exposure apparatus according to a conventional example. Positioning of a substrate such as a wafer with respect to an original plate such as a mask is performed as follows.

The position of the mask 901 is the mask stage 9
The position of the mirror 904 attached to 03 is measured by the laser interferometer 906 attached to the interferometer fixing member 905. The position of the wafer 902 is the wafer fine movement stage 90.
The position of the mirror 908 attached to No. 7 is measured by the laser interferometer 910 attached to the interferometer fixing member 909, and the wafer fine movement stage 907 is driven and controlled so that this positional relationship becomes constant. The wafer 902 is attracted to the wafer chuck 911 on the wafer fine movement stage 907. This wafer chuck 911 has two electrodes 9
A hyperbolic electrostatic chuck having 12 can be used.

Exposure light is incident on the wafer 902 through the mask 901 from a portion of the mask 901 having no absorber. The heat generated when the exposure light is absorbed by the wafer 902 is also transferred to the wafer chuck 911 by thermal conduction of the contact, and the temperature of the wafer 902 and the wafer chuck 911 rises. Due to this temperature rise, the wafer 902 and the wafer chuck 911 are thermally expanded. For example, when the temperature of the wafer chuck 911 increases by 0.1 [° C.] and the material of the wafer chuck 911 is SiC, the position of 90 [nm] is shifted in the entire 300 [mm] chuck, which is high. This is a problem in performing accurate positioning. Therefore, as proposed in JP-A-10-092738, the wafer 902 and the wafer chuck 911 are cooled.

As another cooling method of the conventional example, temperature control of a wafer chuck using a Peltier element has been considered in order to improve temperature controllability. FIG. 10 is a diagram showing a cooling method using a Peltier device according to a conventional example. 10, the same symbols as those in FIG. 9 indicate the same components as those in FIG.

As shown in FIG. 10, a current flowing through the Peltier element 916 is changed so as to change the temperature difference between the front surface and the back surface of the Peltier element 916 so as to keep the temperature constant based on the signal from the temperature sensor 915. It is variable by the control unit 918 and the like. Even in this case, the Peltier element 916
Is an element that makes the temperature difference between the front and back surfaces variable, so it is necessary to maintain the back surface at a certain temperature. Generally, the cooling block 917 maintains the back surface temperature.

When the amount of heat generated is small, in addition to the cooling method of flowing a fluid through the pipe 919 shown in FIG. 10, temperature control is also performed by blowing gas onto the wafer 902 and the wafer chuck 911.

[0008]

As described above, when the piping for cooling is directly connected to the wafer fine movement stage or the wafer chuck and the cooling water is caused to flow through the piping, the following problems occur.・ Vibration caused by flowing water (cooling water) into the pipe is transmitted to the stage.・ The movement of the stage is restricted by connecting the piping. This is the same as controlling the stage position by detecting its position with an interferometer, but the position is unlikely to change even if a force is applied. It becomes impossible to control the vibration.

Due to the above-mentioned problems, there arises a problem that the vibration of the stage, which is a precision instrument to be cooled, cannot be suppressed to a small level. When blowing gas,
The blown gas may flow into the optical path of the laser of the laser interferometer, and the gas may not be filled with the gas having a uniform refractive index, which may cause a measurement error due to fluctuation.

If the wafer chuck is not cooled, as described above, the heat generated by the absorption of the exposure light by the wafer is also transferred to the wafer chuck by the thermal conduction of the contact. Therefore, the temperature of the wafer chuck gradually rises as the exposure is repeated. On the other hand, since the wafer is newly supplied, it is transferred at a substantially constant temperature and adsorbed to the wafer chuck unless there is a fluctuation such as disturbance. When the temperature difference between the wafer and the chuck becomes large, the chucking force of the chuck cannot suppress the elongation of the wafer due to the thermal stress caused by the temperature difference. Therefore, at the same time when the wafer is attracted to the wafer chuck, the wafer starts to expand. Since the exposure is also performed at this timing, there arises a problem that the transfer accuracy is deteriorated.

Furthermore, the minimum size that can be transferred by reduction projection exposure is proportional to the wavelength of light used for transfer and inversely proportional to the numerical aperture of the projection optical system. Therefore, in order to transfer a fine circuit pattern, the wavelength of light used is shortened, and a mercury lamp i-line (wavelength 365 [nm]), a KrF excimer laser (wavelength 248 [nm]), an ArF excimer laser (wavelength). 193 [nm]) and the wavelength of ultraviolet light used have become shorter.

However, semiconductor elements are rapidly miniaturized, and there is a limit in lithography using ultraviolet light. Therefore, in order to efficiently burn a very fine circuit pattern of less than 0.1 [μm], extreme ultraviolet light (EUV light) having a wavelength of about 10 to 15 [nm], which is shorter than ultraviolet light, is used. A reduction projection exposure apparatus (EUV exposure apparatus) and an exposure apparatus using an electron gland (EB exposure apparatus) have been developed.

In the EUV exposure apparatus and the EB exposure apparatus, since the absorption of the exposure light by the substance becomes very large, the exposure atmosphere is a vacuum. In such a vacuum, the temperature of the wafer and the wafer chuck cannot be conventionally adjusted by blowing gas. In addition, the electrostatic chucking method, which is mainly used in vacuum, generally has a weaker chucking force than a vacuum chuck that cannot be used in vacuum. Further, if the temperature of the chuck is adjusted by flowing the water after the exposure without pouring the water only during the exposure, the exposure must be waited until the temperature of the chuck reaches the reference temperature, which causes a problem that the throughput is lowered.

The present invention has been made in view of the above-mentioned problems of the prior art, and it is possible to suppress the slippage of the substrate with respect to the substrate chuck and to provide an exposure apparatus of high accuracy and high throughput.
Another object of the present invention is to provide a method for cooling a substrate chuck in the exposure apparatus.

[0015]

In order to solve the above-mentioned problems, an exposure apparatus of the present invention is an exposure apparatus for exposing a pattern of an original plate onto a substrate, comprising a plurality of substrate chucks for sucking and fixing the substrate. One of the chucks is mounted on a stage that exposes the substrate, and the exposure apparatus has a temperature adjusting unit that adjusts the temperature of another substrate chuck that is not mounted on the stage.

In the present invention, it is preferable to have a means for exchanging the substrate chuck whose temperature is adjusted by the temperature adjusting means and the substrate chuck mounted on the stage. The substrate chuck is preferably made of a low thermal expansion material such as SiC or SiN.

In the exposure apparatus, the exposure apparatus includes a plurality of the stages, and the temperature adjusting means adjusts the temperature of the substrate chuck mounted on the stage other than the exposure stage. Is preferred. Further, the exposure apparatus may further include means for mounting the temperature-adjusted substrate chuck on the stage.

In order to solve the above problems, a method of cooling a substrate chuck according to the present invention is a method of cooling a substrate chuck in an apparatus including a substrate chuck for adsorbing and fixing a substrate and a stage for positioning the substrate, The apparatus includes a plurality of the substrate chucks, one of the substrate chucks is placed on a stage for exposing the substrate, and the cooling method is a temperature control for adjusting the temperature of another substrate chuck not placed on the stage. It is characterized by having a process.

The present invention preferably has a step of exchanging the substrate chuck whose temperature has been adjusted in the temperature adjusting step and the substrate chuck mounted on the stage. Further, the substrate chuck is preferably made of a thermal expansion material such as SiC or SiN.

In the cooling method, the apparatus is an exposure apparatus, the exposure apparatus has two or more stages, and a step of adjusting the temperature of the substrate chuck on the stage which does not perform exposure is included. preferable. Further, it is possible to mount the substrate chuck whose temperature is adjusted in the temperature adjusting step on the stage.

[0021]

EXAMPLES Next, examples of the present invention will be described in detail. <Example of Exposure Apparatus> [Example 1] FIG. 1 is a schematic view of an exposure apparatus according to an example of the present invention. The mask 11 has a large number of subfields. On the mask 11, a pattern (chip pattern) forming one semiconductor device chip as a whole is formed. The mask 11 is placed on a mask stage 12 that is movable in the XY directions. To illuminate each subfield beyond the field of view of the illumination optics, the mask 11 is moved.

Below the mask 11, two projection lenses and deflectors 24 and 25 are provided. And
An illumination beam that is a parallel beam of an electron beam is applied to a certain subfield of the mask 11, and the electron beam 23 that has passed through the pattern portion of the mask 11 is reduced by two projection lenses, and each lens and deflector 24, It is deflected by 25 and is imaged at a predetermined position on the wafer 13. An appropriate resist is applied on the wafer 13, and a dose of an electron beam is applied to the resist to reduce the pattern on the mask 11 and transfer it onto the wafer 13. Here, in FIG. 1, the arrows indicated by the electron beam 23, each lens and the polarizers 24 and 25 indicate the direction of the electron beam and the operable directions of each lens and the polarizers 24 and 25, respectively.

The wafer 13 is adsorbed and fixed on a wafer chuck (electrostatic chuck) 14. Electrostatic chuck 14
Are mounted on a wafer fine movement stage 15 movable in the XY directions. By synchronously scanning the mask stage 12 and the wafer stage 15 in opposite directions, a large number of subfields arranged in the chip pattern can be sequentially exposed. Both stages 12,
15 is equipped with an accurate position measurement system using laser interferometers 16 and 18 attached to interferometer fixing members 17 and 19, respectively, and the position of each stage is accurately controlled. By accurately controlling the stage position and the optical system, the reduced images of the subfields on the mask 11 are accurately joined on the wafer 13,
The entire upper chip pattern is transferred onto the wafer 13.

The fine wafer movement stage 15 is supported by a coarse movement stage (not shown). Further, the atmosphere is vacuum by the vacuum chamber 10 as described above. The wafer chuck 14 and the wafer fine movement stage 15 are not cooled by a liquid (fluid) coolant having a pipe.

FIG. 2 is a diagram for explaining chuck temperature control in the temperature control station of FIG. As shown in FIG. 2, in the temperature control station, the wafer chuck 14 is electrostatically adsorbed on the chuck support 20 whose temperature is controlled by flowing cooling water having a reference temperature of 23 [° C.], and the wafer chuck 1 is contacted.
4 is controlled to the reference temperature. Here, the arrow in FIG. 2 indicates the direction of the flow of the fluid (cooling water), and 28 indicates the electrode included in the wafer chuck 14.

1 and 2, if the wafer 13 does not slip with respect to the chuck 14, the wafer 13 is held by the chuck 14 and is deformed by the thermal expansion of the chuck 14. The low thermal expansion ceramics are SiC and SiN, and the thermal expansion of the heat transferred to the chuck 14 in one exposure is sufficiently within the allowable value.

The wafer hand 21 electrostatically adsorbs the first wafer 13 to the wafer chuck 14 on the temperature control station. Next, the first wafer 13 and the wafer chuck 14 are transferred onto the wafer fine movement stage 15 of the exposure station by the chuck exchange hand 26. vice versa,
The wafer chuck 14 in the exposure station is transferred to the temperature control station. Since the transfer accuracy is sufficient, exposure is performed after fine adjustment alignment of the mask 11 and the wafer 13 by so-called sub-global alignment or fine global alignment is performed in the exposure station. During this exposure, the chuck 14 previously conveyed to the temperature control station is electrostatically adsorbed on the temperature-controlled chuck support base 20, and the wafer chuck 1 is contacted with the chuck 14.
4 is temperature controlled to the reference temperature, and the second wafer 13 is electrostatically attracted from the wafer hand 21.

At the same time when the exposure of the first wafer 13 is completed, the first wafer 13 is recovered by a recovery hand (not shown). Further, the wafer chuck 14 is transferred onto the wafer fine movement stage 15 of the temperature control station by the chuck exchange hand. On the contrary, the second wafer 13 and the wafer chuck 14 in the temperature control station are transferred to the exposure station, and after alignment as described above,
Exposed.

As described above, since the temperature of the wafer chuck 14 that has absorbed the exposure heat is adjusted to the reference temperature by the fluid (cooling water) 26 or the like in the temperature adjustment station each time, the temperature gradually increases with each exposure. Therefore, the transfer position accuracy does not deteriorate due to the thermal expansion of the wafer 13 gradually during the exposure. Further, in this embodiment, the plurality of wafers 13 and the plurality of wafer chucks 14 may be of the same type or of different types.

[Embodiment 2] In Embodiment 1 described above, the wafer chucks of the temperature control station and the exposure station are exchanged for each exposure. In this embodiment, when the exposure intensity is low or the chuck is made of a low thermal expansion material having a linear expansion coefficient of 23 [° C.] or less of 3 × 10 ⁻⁶ (3E−6), for example, 25 sheets are exposed. Confirm the transfer accuracy, such as when the replacement is completed, and then decide the replacement timing. In this case, there is an advantage that time loss in replacement can be reduced.

In the first embodiment, the temperature of the chuck support is controlled by flowing the cooling water having the reference temperature of 23 [° C.]. On the other hand, in the present embodiment, the temperature of the chuck support table is controlled to be lower than the reference temperature, the wafer chuck is adsorbed to this, and the temperature of the wafer chuck is measured using a known means and compared with the allowable value. You may decide the exchange timing with. In this case, there is an advantage that the cooling time of the chuck can be further shortened.

Further, in Example 1, the wafer was transferred to the chuck of the temperature control station and adsorbed. On the other hand, in this embodiment, after exchanging the wafer chucks of the temperature control station and the exposure station, the wafer chucks are transferred to the chuck of the exposure station and adsorbed to the chuck.

[Embodiment 3] This embodiment is applied to an exposure apparatus having a stage using a linear motor. FIG. 3 is a diagram illustrating an exposure apparatus including a stage using a linear motor according to an embodiment of the present invention.
3, the same reference numerals as those in FIG. 1 denote the same components as those in FIG.

The linear motor comprises an armature unit and a magnetic pole unit. The magnetic pole unit includes magnets 32 arranged at predetermined intervals such that the magnetic poles are alternately different from the Y axis.
It consists of 34 mag. The armature unit is composed of coils 33, 35, etc. through which current flows. Due to the Lorentz force generated by the interaction between the current flowing through the coils 33 and 35 and the magnetic flux of the magnets 32 and 34, the armature unit moves to the stator,
The magnetic pole unit functions as a mover, and the coarse movement stage 31
Is moved in the Y-axis direction. The stage 15 is moved in the Y-axis direction by an X-axis linear motor (not shown). Wafer fine movement stage 15 arranged on coarse movement stage 31
Is supported by a spring 36 having low rigidity in the Z direction, and finely positioned in the Z direction with respect to the coarse movement stage 31 by a linear motor movable in the Z axis direction. Similarly, fine positioning in the X and Y directions with respect to the coarse moving stage is performed by an X and Y fine moving linear motor (not shown).

Although the chucks were replaced in Examples 1 and 2,
In the present embodiment, with respect to an exposure apparatus that has two stages equipped with a wafer chuck, one stage performs exposure, and the other stage performs alignment, the wafer chuck of the unexposed stage is temperature-controlled. To do so. Specifically, the temperature of the stage of the exposure station may be stopped by stopping the temperature control water. When the temperature control target does not exist in the exposure station, the time required for alignment in the exposure station can be shortened by measuring the positional relationship between the stage and the wafer by off-axis alignment or the like. Regarding each of the embodiments described above, an example in which two chucks are exchanged is shown and described,
There may be two or more.

[Embodiment 4] In the present embodiment, when the reduction in throughput is within the allowable range, the wafer chuck of the exposure station is transferred to the temperature control station after the exposure, and the wafer chuck is carried out as in the above embodiments. After adjusting the temperature of, the chuck is conveyed to the exposure station, and after being chucked on the wafer stage, exposure is started. In this case, two chucks are not needed.

In all the embodiments described above, the temperature control of the chuck in the temperature control station is not limited to the contact type, but the temperature control may be performed without contact by radiation.

<Example of Semiconductor Production System> Next, a device such as a semiconductor (I
An example of a production system of a semiconductor chip such as C or LSI, a liquid crystal panel, a CCD, a thin film magnetic head, a micromachine, etc.) will be described. This is to carry out maintenance services such as troubleshooting of a manufacturing apparatus installed in a semiconductor manufacturing factory, periodic maintenance, or software provision using a computer network or the like outside the manufacturing factory.

FIG. 4 shows the whole system cut out from a certain angle. In the figure, 101 is a business office of a vendor (apparatus supplier) that provides a semiconductor device manufacturing apparatus. As an example of a manufacturing apparatus, a semiconductor manufacturing apparatus for various processes used in a semiconductor manufacturing factory, for example,
Pre-process equipment (lithography equipment such as exposure equipment, resist processing equipment, etching equipment, heat treatment equipment, film forming equipment,
Flattening equipment, etc.) and post-process equipment (assembling equipment, inspection equipment, etc.) are assumed. In the business office 101, a host management system 10 that provides a maintenance database for manufacturing equipment is provided.
8, a plurality of operation terminal computers 110, and a local area network (LAN) 109 that connects these to construct an intranet or the like. Host management system 1
08 is provided with a gateway for connecting the LAN 109 to the Internet 105, which is an external network of the office, and a security function for restricting access from the outside.

On the other hand, 102 to 104 are semiconductor manufacturers (semiconductor device manufacturers) as users of manufacturing equipment.
Manufacturing plant. The manufacturing factories 102 to 104 may be factories belonging to different makers or may be factories belonging to the same maker (for example, a pre-process factory, a post-process factory, etc.). In each of the factories 102 to 104, a plurality of manufacturing apparatuses 106, a local area network (LAN) 111 that connects them to construct an intranet, and a host as a monitoring apparatus that monitors the operating status of each manufacturing apparatus 106 are provided. A management system 107 is provided. The host management system 107 provided in each factory 102 to 104 includes a gateway for connecting the LAN 111 in each factory to the Internet 105 which is an external network of the factory. As a result, the host management system 108 on the vendor 101 side can be accessed from the LAN 111 of each factory via the Internet 105, and only the limited user is permitted to access by the security function of the host management system 108. Specifically, via the Internet 105,
The factory side notifies the vendor side of status information indicating the operating status of each manufacturing apparatus 106 (for example, a symptom of the manufacturing apparatus in which a trouble has occurred), and the response information corresponding to the notification (for example, an instruction for a troubleshooting method is given. Information to
It is possible to receive maintenance information such as countermeasure software and data), the latest software, and help information from the vendor side. A communication protocol (TCP / IP) generally used on the Internet is used for data communication between the factories 102 to 104 and the vendor 101 and data communication on the LAN 111 in each factory. In addition,
Instead of using the Internet as an external network outside the factory, it is also possible to use a leased line network (ISDN or the like) having high security without being accessed by a third party. Further, the host management system is not limited to one provided by a vendor, and a user may construct a database and place it on an external network to permit access from a plurality of factories of the user to the database.

Now, FIG. 5 is a conceptual view showing the entire system of this embodiment cut out from an angle different from that shown in FIG. In the above example, a plurality of user factories each provided with a manufacturing apparatus are connected to a management system of a vendor of the manufacturing apparatus via an external network, and production management of each factory or at least one unit is performed via the external network. Was used for data communication of information on the manufacturing equipment. On the other hand, in this example, a factory equipped with manufacturing equipment of a plurality of vendors and a management system of each vendor of the plurality of manufacturing equipments are connected by an external network outside the factory, and maintenance information of each manufacturing equipment is displayed. It is for data communication. In the figure, reference numeral 201 denotes a manufacturing plant of a manufacturing apparatus user (semiconductor device manufacturing maker), and a manufacturing apparatus for performing various processes is installed on a manufacturing line of the factory.
The film forming processing device 204 is introduced. Although only one manufacturing factory 201 is illustrated in FIG. 5, a plurality of factories are actually networked in the same manner. Each device in the factory is connected by a LAN 206 to form an intranet or the like, and the host management system 205 manages the operation of the manufacturing line. On the other hand, the exposure apparatus manufacturer 210, the resist processing apparatus manufacturer 220, the film deposition apparatus manufacturer 230, etc.
Each business site of the vendor (device supplier) is provided with host management systems 211, 221, 231 for performing remote maintenance of the supplied equipment, respectively, and these are provided with the maintenance database and the gateway of the external network as described above. . The host management system 205 that manages each device in the user's manufacturing factory and the vendor management system 211, 221, 231 of each device are the external network 20.
It is connected by the Internet or a leased line network which is 0. In this system, if a trouble occurs in any of the series of manufacturing equipment on the manufacturing line, the operation of the manufacturing line is suspended, but the vendor of the equipment in trouble receives remote maintenance via the Internet 200. This enables quick response and minimizes production line downtime.

Each manufacturing apparatus installed in the semiconductor manufacturing factory is provided with a display, a network interface, and a computer for executing the network access software and the apparatus operating software stored in the storage device. The storage device is a built-in memory, a hard disk, a network file server, or the like. The network access software includes a dedicated or general-purpose web browser, and provides a user interface having a screen, an example of which is shown in FIG. 6, on the display. The operator who manages the manufacturing equipment at each factory refers to the screen and refers to the model of the manufacturing equipment (4
01), serial number (402), trouble subject (403), occurrence date (404), urgency (405), symptom (406), coping method (407), progress (408), and other information on the screen. Fill in the input fields. The entered information will be sent to the maintenance database via the Internet,
The resulting appropriate maintenance information is returned from the maintenance database and presented on the display. Further, the user interface provided by the web browser further realizes a hyperlink function (410, 411, 412) as shown in the figure, so that the operator can access more detailed information of each item or from a software library provided by the vendor. It is possible to pull out the latest version of software used for the manufacturing apparatus, or pull out an operation guide (help information) to be used as a reference for the factory operator. Here, the maintenance information provided by the maintenance database includes the information about the present invention described above, and the software library also provides the latest software for implementing the present invention.

Next, a semiconductor device manufacturing process using the above-described production system will be described. Figure 7
1 shows an overall manufacturing process flow of a semiconductor device. In step 1 (circuit design), the circuit of the semiconductor device is designed. In step 2 (mask manufacturing), a mask having the designed circuit pattern is manufactured. On the other hand, in step 3 (wafer manufacturing), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by the lithography technique using the mask and the wafer prepared above. The next step 5 (assembly) is called a post-process, which is a process of forming a semiconductor chip using the wafer manufactured in step 4, and an assembly process (dicing,
Assembling process such as bonding) and packaging process (chip encapsulation). In step 6 (inspection), the semiconductor device manufactured in step 5 undergoes inspections such as an operation confirmation test and a durability test. A semiconductor device is completed through these processes and shipped (step 7). The front-end process and the back-end process are performed in separate dedicated factories, and maintenance is performed for each of these factories by the remote maintenance system described above. Also, between the front-end factory and the back-end factory,
Information and the like for production management and equipment maintenance are data-communicated via the Internet or a leased line network.

FIG. 8 shows a detailed flow of the wafer process. In step 11 (oxidation), the surface of the wafer is oxidized. In step 12 (CVD), an insulating film is formed on the wafer surface. In step 13 (electrode formation), electrodes are formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted in the wafer. Step 1
In 5 (resist processing), a photosensitive agent is applied to the wafer. In step 16 (exposure), the circuit pattern of the mask is printed and exposed on the wafer by the exposure apparatus described above. In step 17 (development), the exposed wafer is developed. In step 18 (etching), parts other than the developed resist image are removed. In step 19 (resist stripping), the resist that is no longer needed after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer. Since the manufacturing equipment used in each process is maintained by the remote maintenance system described above, troubles can be prevented in advance, and even if troubles occur, quick recovery is possible, and Productivity can be improved.

[0045]

The present invention has the following effects.
Since the exposure apparatus of the present invention has a plurality of substrate chucks and is provided with, for example, a temperature adjusting means and a temperature adjusting process for adjusting the temperature of the substrate chuck not placed on the wafer stage, slippage between the substrate such as a wafer and the substrate chuck is prevented. Can be suppressed. Therefore, the transfer position accuracy can be improved, and the exposure apparatus and the method of cooling the substrate chuck with which the reduction in throughput is small can be obtained.

[Brief description of drawings]

FIG. 1 is a schematic diagram of an exposure apparatus according to an embodiment of the present invention.

FIG. 2 is a diagram illustrating chuck temperature control in the temperature control station of FIG.

FIG. 3 is a diagram illustrating an exposure apparatus including a stage that uses a linear motor according to an embodiment of the present invention.

FIG. 4 is a conceptual view of a semiconductor device production system including an exposure apparatus according to an embodiment of the present invention as viewed from an angle.

FIG. 5 is a conceptual diagram of a semiconductor device production system including an exposure apparatus according to an embodiment of the present invention as viewed from another angle.

FIG. 6 is a diagram showing a specific example of a user interface in a semiconductor device production system including an exposure apparatus according to an embodiment of the present invention.

FIG. 7 is a diagram illustrating a flow of a device manufacturing process by the exposure apparatus according to the embodiment of the present invention.

FIG. 8 is a diagram illustrating a wafer process by the exposure apparatus according to the embodiment of the present invention.

FIG. 9 is a diagram for explaining positioning of a mask and a wafer in an exposure apparatus according to a conventional example.

FIG. 10 is a diagram showing a cooling method using a Peltier device according to a conventional example.

[Explanation of symbols]

10: vacuum chamber, 11, 901: mask, 12, 9
03: mask stage, 13, 902: wafer, 14,
911: Wafer chuck, 15, 907: Wafer fine movement stage, 16, 18, 906, 910: Laser interferometer,
17, 19, 905, 909: Interferometer fixing member, 20:
Chuck support, 21: Wafer hand, 22, 919:
Piping, 23: Electron beam, 24, 25: Operating directions of plural lenses and polarizers, 26: Chuck exchange hand, 2
7: Direction of flow of fluid (cooling water), 28: Electrode, 31:
Coarse movement stage, 32, 34: magnet, 33, 35: coil, 36: spring, 904, 908: mirror, 912: electrode, 915: temperature sensor, 916: Peltier element, 91
7: cooling block, 918: Peltier element control unit.

   ─────────────────────────────────────────────────── ─── Continued front page    F-term (reference) 5F031 CA02 FA05 FA07 FA12 HA02                       HA16 HA38 HA50 HA53 HA60                       JA06 JA14 JA17 JA32 JA46                       KA06 KA07 LA08 MA27 NA05                       PA06 PA11                 5F046 CC01 CC08 CC13

Claims (17)

[Claims] 1. An exposure apparatus for exposing a pattern of an original plate onto a substrate, comprising a plurality of substrate chucks for adsorbing and fixing the substrate, one of the substrate chucks being mounted on a stage for exposing the substrate, the exposure apparatus Is an exposure apparatus having a temperature adjusting means for adjusting the temperature of another substrate chuck not mounted on the stage. 2. The exposure apparatus according to claim 1, further comprising means for exchanging the substrate chuck whose temperature is adjusted by the temperature adjusting means and the substrate chuck mounted on the stage. 3. The exposure apparatus according to claim 1, wherein the substrate chuck is made of a low thermal expansion material. 4. The exposure apparatus includes a plurality of the stages, and the temperature adjusting means adjusts the temperature of the substrate chuck mounted on the stage other than the exposure stage. The exposure apparatus according to any one of claims 1 to 3. 5. The exposure apparatus according to claim 1, further comprising means for mounting the temperature-adjusted substrate chuck on the stage. 6. The exposure apparatus according to claim 1, further comprising a display, a network interface, and a computer that executes network software, and the exposure apparatus maintenance information is stored in a computer network. An exposure apparatus that enables data communication via the. 7. The network software is connected to an external network of a factory in which the exposure apparatus is installed and provides a user interface on the display for accessing a maintenance database provided by a vendor or a user of the exposure apparatus. 7. The exposure apparatus according to claim 6, which makes it possible to obtain information from the database via the external network. 8. A method of cooling a substrate chuck in an apparatus including a substrate chuck for adsorbing and fixing a substrate and a stage for positioning the substrate, the apparatus comprising a plurality of the substrate chucks, wherein one of the substrate chucks is provided. Is placed on a stage that exposes the substrate,
The cooling method includes a temperature adjusting step of adjusting the temperature of another substrate chuck not placed on the stage. 9. The cooling method according to claim 8, further comprising a step of replacing the substrate chuck whose temperature is adjusted in the temperature adjusting step with the substrate chuck mounted on the stage. 10. The cooling method according to claim 8, wherein the substrate chuck is made of a low thermal expansion material. 11. The apparatus is an exposure apparatus, and the exposure apparatus has two or more stages, and has a step of adjusting the temperature of the substrate chuck on the stage that does not perform exposure. The cooling method according to claim 8. 12. The cooling method according to claim 8, wherein the substrate chuck whose temperature is adjusted by the temperature adjusting step is mounted on the stage. 13. A step of installing a manufacturing apparatus group for various processes including the exposure apparatus according to claim 1 in a semiconductor manufacturing factory, and a plurality of processes using the manufacturing apparatus group. And a step of manufacturing a semiconductor device. 14. Data communication of information relating to at least one of the manufacturing apparatus group between a step of connecting the manufacturing apparatus group by a local area network and between the local area network and an external network outside the semiconductor manufacturing factory. The method for manufacturing a semiconductor device according to claim 13, further comprising: 15. A database provided by a vendor or a user of the exposure apparatus is accessed through the external network to obtain maintenance information of the manufacturing apparatus by data communication, or a semiconductor manufacturing factory different from the semiconductor manufacturing factory. 15. The semiconductor device manufacturing method according to claim 14, wherein production control is performed by performing data communication with the device via the external network. 16. A group of manufacturing apparatuses for various processes including the exposure apparatus according to claim 1, a local area network connecting the group of manufacturing apparatuses, and a local area network outside the factory. A semiconductor manufacturing factory, which has a gateway that enables access to the external network, and enables data communication of information regarding at least one of the manufacturing apparatus groups. 17. The method according to claim 1, which is installed in a semiconductor manufacturing factory.
A method for maintaining an exposure apparatus according to any one of claims 1 to 7, wherein the vendor or user of the exposure apparatus provides a maintenance database connected to an external network of the semiconductor manufacturing factory, and the semiconductor manufacturing factory. A step of permitting access to the maintenance database from the inside via the external network; and a step of transmitting the maintenance information accumulated in the maintenance database to the semiconductor manufacturing factory side via the external network. Maintenance method for exposure equipment.