JP4817545B2 - Exposure apparatus and device manufacturing method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention, Ru der relates exposure apparatus that exposes a substrate by projecting a pattern of an original.
[0002]
[Prior art]
In a photolithography process for manufacturing a semiconductor element or the like, a pattern formed on a reticle or photomask is transferred to a substrate (wafer) or the like coated with a photosensitive agent using a projection exposure apparatus. As the projection exposure apparatus, each shot area of the wafer is moved into the exposure area of the projection optical system, the pattern image of the reticle corresponding to each shot area is batch exposed, and the movement and batch exposure are repeated again. Repeat type reduction type exposure apparatus (stepper) and step-and-scan type exposure apparatus that exposes a reticle pattern on a wafer while relatively synchronously scanning the reticle and wafer to enlarge the exposure area. (Scanner) is used.
[0003]
In these projection type exposure apparatuses, the position and tilt angle of the exposure area of the wafer surface to be exposed with respect to the optical axis direction of the projection optical system are read, and the position and tilt angle of the exposure area are controlled in an optimum state. It is essential. Conventionally, an optical measurement method described below has been used as a surface position detection device that is a mechanism for reading the position and inclination angle of the exposure area with respect to the optical axis direction of the projection optical system, that is, the focus state of the exposure surface. .
[0004]
FIG. 1 is a schematic configuration diagram of a projection type exposure apparatus in semiconductor element manufacturing. The reticle R on which the transfer pattern is formed and held on the reticle stage 1 is illuminated with an illumination light beam IL from an illumination optical system (not shown). The illuminated pattern on the reticle R is projected onto the wafer W by the projection optical system UL. The wafer W is mounted on a focus / leveling stage 2 that holds the wafer W and adjusts the tilt angle of the wafer W and the height in the optical axis direction with respect to the projection optical system UL. The focus / leveling stage 2 is mounted on an XY stage 3 that positions the wafer W in a plane perpendicular to the optical axis of the projection optical system UL, and the XY stage 3 is held on a wafer stage base 4. The position of the projection optical system UL with respect to the optical axis direction is measured using the surface position detection device 7.
[0005]
FIG. 2 is a plan view showing the surface position detecting device. This surface position detection apparatus uses a light source (not shown) of a focus position measurement light beam that irradiates the wafer W with non-photosensitive light, and is illuminated with a light beam of illumination light 11 sent from the light source through the optical fiber 10. The focus detection pattern plate 13 and the projection optical system for projecting the pattern (aperture) on the focus detection pattern plate 13 obliquely onto a plurality of measurement points located in the vicinity of the exposure area of the projection optical system UL or in the exposure area The projector side is configured by the above. Here, the light projection optical system includes a mirror 14, a relay lens 15, an aperture stop 16, a mirror 17, an irradiation objective lens 18, a light projection prism mirror 19, and the like. Reflected reflected light from a plurality of measurement points enters the light receiving optical system and is collected, and a focus detection pattern (aperture) image at each measurement point is re-applied to the photoelectric detection means 27 corresponding to each measurement point. Imaged. By detecting the output signal detected by the photoelectric detection means 27 by image processing, a detection signal corresponding to the amount of deviation caused by the height and tilt angle of the wafer W is generated for each measurement point. Based on the detection signal from the photoelectric detection means 27, the focus / leveling stage 2 corrects and controls the position and tilt angle of the exposure area of the wafer W by the control means (not shown). Here, the light receiving optical system includes a light receiving prism mirror 20, a condenser objective lens 21, a mirror 22, an aperture stop 23, a relay lens 24, mirrors 25 and 26, and the like.
[0006]
[Problems to be solved by the invention]
In a normal projection exposure apparatus, as shown in FIG. 1, the projection optical system UL is supported on the upper surface of the gantry 8 fixed on the surface plate 9 via a flange of the projection optical system UL or the like. The surface position detection device 7 is fixed to the lower surface of the gantry 8 and is installed in a space (hereinafter referred to as a stage space) surrounded by the gantry 8 and the surface plate 9 together with the focus / leveling stage 2 and the XY stage 3.
[0007]
In addition, a laser interferometer 6 for projecting a laser beam onto an interferometer mirror 5 fixed to the XY stage 3 is also provided for the gantry 8 in order to observe a position in a plane perpendicular to the optical axis of the projection optical system of the XY stage 3. It is fixed to the lower surface and is included in the stage space.
[0008]
Conventionally, the optical path of the laser interferometer 6 and the surface position detector 7 has a region where the air conditioning cannot be stabilized and the air flow cannot be optimized locally using the cover due to the stage drive stroke, and the temperature gradient Due to the air temperature fluctuation (refractive index fluctuation) due to the air temperature, the measurement accuracy is greatly affected, so the stage space has a dedicated air conditioning system (not shown) with the blowout temperature controlled to ± 0.05 ° C or less. It has.
[0009]
Further, the surface position detection device 7 having the sensor unit 28 that processes the focus detection signal by the photoelectric detection unit and constitutes the photoelectric detection unit that is a heat generation source is provided with a local exhaust mechanism 29 in the sensor unit 28, and the temperature in the stage space. It prevents the occurrence of gradients.
[0010]
However, even if the local exhaust mechanism 29 is provided in the sensor unit 28, it is impossible to exhaust the heat completely, and the surface temperature of the sensor cover unit is 0.5 to 0.5 with respect to the preset temperature of the air conditioning system. It is about 1.0 ° C higher. For this reason, a temperature gradient is generated in the stage space, air temperature fluctuation is caused on the optical path of the surface position detection device 7 and the laser interferometer 6, and the measurement result of the surface position detection device 7 and the laser interferometer 6 is about several tens of nm. Measurement error occurred.
[0011]
The measurement error of the surface position detecting device 7 is a focus position shift when the pattern of the reticle R is exposed on the wafer W via the projection optical system UL, and the problem that the reticle pattern does not resolve well on the wafer. Become. Regarding the measurement error due to the laser interferometer 6, when the pattern of the reticle R is exposed on the wafer W via the projection optical system 6, a plurality of patterns are superimposed on the same area on the wafer W and exposed. Overlay accuracy will decrease.
[0012]
In the future, in order to improve the resolution of the exposure apparatus, the numerical aperture (NA) of the projection optical system will be increased and the exposure wavelength will be shortened. (Depth) decreases, and the measurement accuracy when the wafer surface is set at the in-focus position of the projection optical system becomes even more severe. In order to improve the measurement accuracy of the surface position detection device, there is a tendency to increase surface information in the exposure area on the wafer surface. However, the increase in the number of measurement points on the wafer surface is a sensor that is a photoelectric detection means. As a result, the amount of heat generation also increases, which may further deteriorate the measurement accuracy of the surface position detection device and the laser interferometer.
[0013]
The present invention aims at improving the total measuring accuracy of the record over THE interferometer.
[0014]
[Means for Solving the Problems]
An exposure apparatus of the present invention for achieving the above object is an exposure apparatus that exposes a substrate by projecting a pattern of an original,
A stage capable of holding and moving the original plate or the substrate;
A surface plate supporting the stage;
Detecting means for detecting the height and inclination of the surface of the original plate or the substrate held on the stage;
A gantry supporting the detection means;
Air-conditioning means for air-conditioning a space including the stage, surrounded by the surface plate and the mount;
A laser interferometer for measuring the position of the stage having an optical path in the space;
A projection optical system that is supported by the gantry and projects the pattern of the original plate onto the substrate ;
The detection means re-images a photoelectric detection means, a light projecting optical system that projects a pattern on the original or the substrate, and an image of the pattern projected on the original or the substrate on the photoelectric detection means. A first part including the photoelectric detection means is supported by the gantry outside the space, and the other second part is supported by the gantry in the space, The re-image is performed through a hole in the gantry,
A cooling mechanism for cooling the first portion;
An exposure apparatus characterized by that.
[0022]
DETAILED DESCRIPTION OF THE INVENTION
(First embodiment)
FIG. 3 is a schematic view of the main part of the exposure apparatus according to the first embodiment of the present invention. This embodiment shows a case where the present invention is applied to a projection exposure apparatus using a step-and-repeat method or a step-and-scan method for manufacturing devices. In the figure, R is an original plate so-called reticle (first object) to be projected, which is placed on the reticle stage 1r, and is positioned and held with respect to the main body by an alignment system (not shown). The reticle R is illuminated with an illumination light beam IL from an illumination optical system (not shown). UL is a projection optical system, which is supported by the gantry 8 and projects the pattern of the reticle R onto a wafer (photosensitive substrate) W.
[0023]
The wafer stage 1w holding the wafer W is disposed in a stage space surrounded by the gantry 8 and the surface plate 9, and is placed on the wafer stage base 4. The wafer W is projected onto the light of the projection optical system UL. The XY stage 3 moves on an XY plane perpendicular to the axis, and a focus / leveling stage 2 placed on the XY stage 3. The focus / leveling stage 2 drives a wafer chuck (not shown) for attracting and holding the wafer W in the direction of the optical axis (Z direction) of the projection optical system UL by a minute drive (focus drive) and by a slight rotation around the optical axis (leveling). Driving).
[0024]
An interferometer mirror 5 is fixed to the XY stage 3 and monitors the position in the X direction with a laser interferometer 6 supported on the lower surface of the gantry 8. The interferometer mirror 5 and the laser interferometer 6 are similarly arranged in the Y direction. Using signals obtained from the interferometer mirror 5 and the laser interferometer 6, the wafer W is always positioned at a predetermined position by a control system (not shown) of the XY stage 3.
[0025]
In the stage space , a surface position detection device 7 as a detection means is also fixed to the lower surface of the gantry 8, and this exposure device detects the height and inclination of the surface of the wafer W with respect to the projection optical system UL, and detects it. By sending a detection signal to the control means (not shown) of the focus / leveling stage 2 so that the value becomes a predetermined best focus value (a predetermined command value indicating the height of the image plane of the projection optical system), the wafer The height and inclination of the exposure area of W are corrected and controlled.
[0026]
These main components are installed in a constant temperature chamber. In the constant temperature chamber, temperature control with higher accuracy is performed than in a normal clean room. For example, the temperature control in the clean room is in a range of ± 2 to 3 ° C., whereas in the constant temperature chamber, ± 0 It is kept at about 1 ℃.
[0027]
In particular, in the stage space where the surface position detection device 7 and the laser interferometer 6 that require precision measurement are arranged, the temperature of the entire stage space (air-conditioned space) is controlled using a temperature-controlled air blowing filter (not shown). The temperature is almost the same as the blowing temperature, and measurement errors due to temperature fluctuations (refractive index variation) of air on the optical path of the surface position detector 7 and the laser interferometer 6 due to the temperature gradient are prevented.
[0028]
The exposure apparatus according to the present embodiment pays attention to preventing temperature fluctuation caused by arranging a heat generation source in the stage space, and a sensor unit 28 that is a heat generation source of the surface position detection device 7 installed in the stage space. A configuration of the surface position detection device 7 installed in the exposure apparatus according to the present embodiment will be described in detail below.
[0029]
The light projecting optical system is the same as the conventional one and will be described with reference to FIG. 2, and the light receiving optical system will be described with reference to FIG.
The light projecting optical system is configured as follows. A light source BOX (not shown) in which a light source for a focus position measuring light beam that irradiates the wafer W with non-photosensitive light is a heat source, and is thus arranged outside the stage air-conditioning space. Illumination light 11 is emitted through the optical fiber 10, is condensed by the illumination system lens 12, and illuminates the focus detection pattern plate 13, and includes a mirror 14, a relay lens 15, an aperture stop 16, a mirror 17, and an irradiation objective. A pattern (aperture) is projected obliquely onto a plurality of measurement points located near or in the exposure area of the projection optical system UL via the lens 18 and the light projection prism mirror 19.
[0030]
Reflected light from a plurality of projected measurement points is incident on the light receiving optical system shown in FIG. 3, collected by the light receiving prism mirror 20 and the condenser objective lens 21, and reflected by the mirror 22 above the gantry 8. The light is condensed by the aperture stop 23 (pupil surface) and the relay lens system 24 inserted in the hole of the gantry 8, reflected by the mirror 25 to the upper surface of the gantry 8, and then on the sensor unit 28 constituted by the photoelectric detection means 27. The image of the focus detection pattern (aperture) at each measurement point is re-imaged on the light receiving surface of the photoelectric detection means 27 corresponding to each measurement point. The elements after the relay lens are configured in the sensor unit 28 and are fixed to the upper surface of the gantry 8 via the base 30. The photoelectric detection means 27 is a one-dimensional or two-dimensional CCD (charge coupled device), and corresponds to the amount of deviation caused by the height and inclination angle of the wafer W at each measurement point by detecting the output signal by image processing. A detection signal is generated.
[0031]
As described above, in the present embodiment, holes for optical paths and optical member insertion are provided in the gantry 8, and the light receiving optical system of the surface position detecting device 7 is developed in the vertical direction using the mirror, and optically adjusted. In the vicinity of the pupil surface with low sensitivity , the sensor part 28 as the first part and the main part (light projecting optical system, light receiving optical system) of the surface position detecting means as the other second part are divided. Thus, the arrangement position of the sensor unit 28 composed of the photoelectric detection means 27 is changed from the lower surface of the gantry 8 to the upper surface, and measurement errors of the surface position detection device 7 and the laser interferometer 6 due to heat generation of the sensor unit 28 are prevented. ing.
[0032]
(Second Embodiment)
FIG. 4 shows an exposure apparatus according to the second embodiment, in which the sensor unit 28 of the surface position detection device 7 is arranged on the side surface of the gantry 8.
The configuration up to the light projecting optical system of the surface position detecting device 7 is the same as that of the first embodiment shown in FIG. 3, and the routing of the light receiving optical system will be described below.
[0033]
Reflected light from a plurality of measurement points projected onto the wafer by the light projecting optical system is incident on the light receiving optical system and is collected by the light receiving prism mirror 20 and the light collecting objective lens 21, unlike the first embodiment. Without being bent using a mirror, the light is condensed by an aperture stop 23 (pupil surface) and a relay lens 24, raised on a side surface of the gantry 8 by a mirror 25, and guided to a sensor unit 28 constituted by photoelectric detection means 27. Then, an image of the focus detection pattern (aperture) at each measurement point is re-imaged on the light receiving surface of the photoelectric detection means 27 corresponding to each measurement point. The elements after the relay lens are configured in the sensor unit 28 and fixed to the side surface of the gantry 8 via the base 30. The rest is the same as in the first embodiment, and the photoelectric detection means 27 detects the output signal corresponding to the amount of deviation caused by the height and inclination angle of the wafer W by detecting the output signal. Generate a signal. The exposure apparatus corrects and controls the height and inclination of the exposure area of the wafer W by sending a detection signal to a control means (not shown) of the focus / leveling stage 2.
[0034]
In the present embodiment, the heat of the sensor unit 28 is shielded at the side opening of the gantry 8 so that the heat of the sensor unit 28 does not flow into the stage space from the side surface of the gantry 8 to which the sensor unit 28 is fixed. A plate 31 is provided for blocking.
[0035]
As described above, in the present embodiment, the light receiving optical system of the surface position detecting device 7 is developed in the horizontal direction without using a mirror, and in the vicinity of the pupil surface where the optical adjustment sensitivity is low, the main body unit and the sensor unit. By dividing 28, the arrangement position of the sensor unit 28 constituted by the photoelectric detection means 27 is changed from the lower surface to the side surface of the gantry 8, and the surface position detection device 7 and the laser interferometer 6 caused by heat generation of the sensor unit 28 are changed. The measurement error is prevented.
[0036]
When the sensor unit 28 is arranged on the upper surface or the side surface of the gantry 8 as in the above embodiment, the optical from the focus detection pattern surface of the focus detection pattern plate 13 of the projection optical system to the wafer W surface is usually used. The optical system from the system and the wafer W surface to the light receiving surface of the photoelectric detection means 27 can be the same, but the focal length of the light receiving optical system is increased by the thickness, width, etc. of the gantry 8. In some cases, it is necessary to take such actions.
[0037]
Further, the surface position detection device 7 installed in the exposure apparatus according to the present embodiment is provided with a local exhaust mechanism 29 as in the past in the sensor unit 28 to increase the temperature of the sensor unit 28 itself and to heat the external space. In addition to preventing the outflow, the heat of the sensor unit 28 is transmitted from the base 30 in contact with the gantry 8 of the sensor unit 28 to the gantry 8 to prevent air temperature fluctuations in the stage space, and the projection optics fixed to the gantry 8 In order to prevent occurrence of mechanical deformation due to heat of the system UL, the laser interferometer 6, the surface position detecting device 7 and the sensor unit 28 itself, the inside of the base 30 in contact with the mount 8 of the sensor unit 28 is shown in FIG. A cooling pipe 32 is provided, and a liquid that is a temperature-controlled refrigerant is circulated in the cooling pipe 32.
[0038]
In each of the embodiments described above, the wafer stage space has been described. However, the present invention is also applied to an exposure apparatus including a surface position detection device that measures the height, inclination, deflection, and the like of the reticle pattern surface in the reticle stage space. Applicable.
[0039]
The present invention is not limited to a reduction type exposure apparatus using a projection optical system, but also uses a mirror projection type exposure apparatus (aligner) that exposes a pattern on a mask onto a photosensitive substrate using a mirror optical system of equal magnification. It is also applicable to.
[0040]
Furthermore, the present invention provides an electron beam exposure apparatus or an X-ray exposure apparatus that draws a circuit pattern or projects a circuit pattern by using, for example, an electron beam and an electron lens other than an optical exposure apparatus. Can be applied similarly.
[0041]
(Embodiment of semiconductor production system)
Next, an example of a production system of a semiconductor device (a semiconductor chip such as an IC or LSI, a liquid crystal panel, a CCD, a thin film magnetic head, a micromachine, etc.) using the apparatus according to the present invention will be described. In this method, maintenance services such as troubleshooting, periodic maintenance, and software provision for manufacturing apparatuses installed in a semiconductor manufacturing factory are performed using a computer network outside the manufacturing factory.
[0042]
FIG. 6 shows the entire system cut out from a certain angle. In the figure, reference numeral 101 denotes a business office of a vendor (apparatus supplier) that provides a semiconductor device manufacturing apparatus. Examples of manufacturing apparatuses include semiconductor manufacturing apparatuses for various processes used in semiconductor manufacturing plants, such as pre-process equipment (lithographic apparatuses such as exposure apparatuses, resist processing apparatuses, etching apparatuses, heat treatment apparatuses, film forming apparatuses, and flattening apparatuses. As well as post-processing equipment (assembly equipment, inspection equipment, etc.). The office 101 includes a host management system 108 that provides a maintenance database for manufacturing apparatuses, a plurality of operation terminal computers 110, and a local area network (LAN) 109 that connects these to construct an intranet or the like. The host management system 108 includes a gateway for connecting the LAN 109 to the Internet 105, which is an external network of the office, and a security function for restricting access from the outside.
[0043]
On the other hand, 102 to 104 are manufacturing factories of semiconductor manufacturers as users of manufacturing apparatuses. The manufacturing factories 102 to 104 may be factories belonging to different manufacturers, or factories belonging to the same manufacturer (for example, a factory for a pre-process, a factory for a post-process, etc.). In each of the factories 102 to 104, a plurality of manufacturing apparatuses 106, a local area network (LAN) 111 that connects them together to construct an intranet, etc., and a host as a monitoring apparatus that monitors the operating status of each manufacturing apparatus 106 A management system 107 is provided. The host management system 107 provided in each factory 102 to 104 includes a gateway for connecting the LAN 111 in each factory to the Internet 105 which is an external network of the factory. As a result, the host management system 108 on the vendor's office 101 side can be accessed from the LAN 111 of each factory via the Internet 105, and access is permitted only to limited users due to the security function of the host management system 108. . Specifically, status information (for example, a symptom of a manufacturing apparatus in which a trouble has occurred) indicating the operating status of each manufacturing apparatus 106 is notified from the factory side to the vendor side via the Internet 105, and the notification is also handled. It is possible to receive response information (for example, information for instructing a coping method for trouble, coping software or data), maintenance information such as the latest software and help information from the vendor side. A communication protocol (TCP / IP) generally used on the Internet is used for data communication between each factory 102 to 104 and the vendor office 101 and data communication on the LAN 111 in each factory. . Instead of using the Internet as an external network outside the factory, it is also possible to use a high-security dedicated line network (such as ISDN) without being accessible from a third party. Further, the host management system is not limited to the one provided by the vendor, and the user may construct a database and place it on the external network, and allow access to the database from a plurality of factories of the user.
[0044]
FIG. 7 is a conceptual diagram showing the overall system of the present embodiment cut out from an angle different from that in FIG. In the previous example, a plurality of user factories each equipped with a manufacturing apparatus and a management system of a vendor of the manufacturing apparatus are connected via an external network, and production management of each factory or at least one unit is performed via the external network. Data communication of manufacturing equipment was performed. On the other hand, in this example, a factory equipped with a plurality of vendors' manufacturing devices and a management system of each vendor of the plurality of manufacturing devices are connected by an external network outside the factory, and maintenance information of each manufacturing device is obtained. Data communication. In the figure, reference numeral 201 denotes a manufacturing factory of a manufacturing apparatus user (semiconductor device manufacturer), and a manufacturing apparatus that performs various processes on the manufacturing line of the factory, in this case, an exposure apparatus 202, a resist processing apparatus 203, and a film forming processing apparatus. 204 has been introduced. In FIG. 7, only one manufacturing factory 201 is depicted, but actually, a plurality of factories are similarly networked. Each device in the factory is connected by a LAN 206 to form an intranet, and the host management system 205 manages the operation of the production line.
[0045]
On the other hand, each business office of a vendor (apparatus supply manufacturer) such as the exposure apparatus manufacturer 210, the resist processing apparatus manufacturer 220, and the film formation apparatus manufacturer 230 has host management systems 211, 221 for performing remote maintenance of the supplied devices. 231 and these comprise a maintenance database and an external network gateway as described above. The host management system 205 that manages each device in the user's manufacturing factory and the vendor management systems 211, 221, and 231 of each device are connected by the external network 200, which is the Internet or a dedicated line network. In this system, if a trouble occurs in any one of a series of production equipment on the production line, the operation of the production line is suspended, but remote maintenance via the Internet 200 is received from the vendor of the troubled equipment. Therefore, it is possible to respond quickly and to minimize downtime of the production line.
[0046]
Each manufacturing apparatus installed in the semiconductor manufacturing factory includes a display, a network interface, and a computer that executes network access software stored in a storage device and software for operating the apparatus. The storage device is a built-in memory, a hard disk, or a network file server. The network access software includes a dedicated or general-purpose web browser, and provides, for example, a user interface having a screen as shown in FIG. 8 on the display. The operator who manages the manufacturing apparatus in each factory refers to the screen, and the manufacturing apparatus model 401, serial number 402, trouble subject 403, occurrence date 404, urgency 405, symptom 406, countermeasure 407, progress 408, etc. Enter the information in the input field on the screen. The input information is transmitted to the maintenance database via the Internet, and appropriate maintenance information as a result is returned from the maintenance database and presented on the display. Further, the user interface provided by the web browser further realizes hyperlink functions 410 to 412 as shown in the figure, and the operator can access more detailed information on each item, or the latest software used for the manufacturing apparatus from the software library provided by the vendor. Version software can be pulled out, and operation guides (help information) for use by factory operators can be pulled out. Here, the maintenance information provided by the maintenance database includes the information related to the present invention described above, and the software library also provides the latest software for realizing the present invention.
[0047]
Next, a semiconductor device manufacturing process using the production system described above will be described. FIG. 9 shows the flow of the entire manufacturing process of the semiconductor device. In step 1 (circuit design), a semiconductor device circuit is designed. In step 2 (mask production), a mask on which the designed circuit pattern is formed is produced. On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer. The next step 5 (assembly) is called a post-process, and is a process for forming a semiconductor chip using the wafer produced in step 4, and is an assembly process (dicing, bonding), packaging process (chip encapsulation), etc. Process. In step 6 (inspection), the semiconductor device manufactured in step 5 undergoes inspections such as an operation confirmation test and a durability test. Through these steps, the semiconductor device is completed and shipped (step 7). The pre-process and post-process are performed in separate dedicated factories, and maintenance is performed for each of these factories by the remote maintenance system described above. In addition, information for production management and apparatus maintenance is communicated between the pre-process factory and the post-process factory via the Internet or a dedicated network.
[0048]
FIG. 10 shows a detailed flow of the wafer process. In step 11 (oxidation), the wafer surface is oxidized. In step 12 (CVD), an insulating film is formed on the wafer surface. In step 13 (electrode formation), an electrode is formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (resist process), a photosensitive agent is applied to the wafer. In step 16 (exposure), the circuit pattern of the mask is printed onto the wafer by exposure using the exposure apparatus described above. In step 17 (development), the exposed wafer is developed. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer. Since the manufacturing equipment used in each process is maintained by the remote maintenance system described above, it is possible to prevent troubles in advance and to recover quickly even if troubles occur. Productivity can be improved.
[0049]
【Effect of the invention】
According to the present invention, the measurement accuracy of a laser interferometer can be improved.
[Brief description of the drawings]
FIG. 1 is a front view showing an overall configuration of an exposure apparatus that is a conventional example.
FIG. 2 is a plan view of a surface position detection apparatus installed in an exposure apparatus that is a conventional example.
FIG. 3 is an elevation view showing the exposure apparatus according to the first embodiment of the present invention.
FIG. 4 is an elevation view showing an exposure apparatus according to a second embodiment of the present invention.
FIG. 5 is a cross-sectional view of a sensor unit base of a surface position detection apparatus applied to an exposure apparatus according to an embodiment of the present invention.
FIG. 6 is a conceptual view of a semiconductor device production system using an apparatus according to the present invention as seen from a certain angle.
FIG. 7 is a conceptual view of a semiconductor device production system using the apparatus according to the present invention as seen from another angle.
FIG. 8 is a specific example of a user interface.
FIG. 9 illustrates a flow of a device manufacturing process.
FIG. 10 is a diagram illustrating a wafer process.
[Explanation of symbols]
1, 1r: reticle stage, 1w: wafer stage, 2: focus / leveling stage, 3: XY stage, 4: wafer stage base, 5: interferometer mirror, 6: laser interferometer, 7: surface position detector, 8 : Stand, 9: Surface plate, 10: Optical fiber, 11: Illumination light, 12: Illumination system lens, 13: Focus detection pattern plate, 14: Mirror, 15: Relay lens, 16: Aperture stop, 17: Mirror, 18: Irradiation objective lens, 19: Projection prism mirror, 20: Light reception prism mirror, 21: Condensing objective lens, 22: Mirror, 23: Aperture stop, 24: Relay lens, 25: Mirror, 26: Mirror, 27: Photoelectric detection means, 28: sensor unit, 29: local exhaust mechanism, 30: base, 31: shielding plate, 32: cooling pipe, IL: illumination light beam, UL: projection optical system, R: retic , W: wafer,
101: Vendor's office, 102, 103, 104: Manufacturing factory, 105: Internet, 106: Manufacturing equipment, 107: Factory host management system, 108: Vendor side host management system, 109: Vendor side local area network (LAN), 110: operation terminal computer, 111: factory local area network (LAN), 200: external network, 201: manufacturing factory of manufacturing apparatus user, 202: exposure apparatus, 203: resist processing apparatus, 204: film formation Processing apparatus, 205: Factory host management system, 206: Factory local area network (LAN), 210: Exposure apparatus manufacturer, 211: Host management system of the office of the exposure apparatus manufacturer, 220: Resist processing apparatus manufacturer, 221: Resist processing equipment manufacturer business Host management system, 230: film forming apparatus manufacturer, 231: host management system at the office of the film forming apparatus manufacturer, 401: type of manufacturing apparatus, 402: serial number, 403: subject of trouble, 404: date of occurrence, 405 : Urgency, 406: Symptom, 407: Countermeasure, 408: Progress, 410, 411, 412: Hyperlink function.

Claims (5)

An exposure apparatus that exposes a substrate by projecting an original pattern,
A stage capable of holding and moving the original plate or the substrate;
A surface plate supporting the stage;
Detecting means for detecting the height and inclination of the surface of the original plate or the substrate held on the stage;
A gantry supporting the detection means;
Air-conditioning means for air-conditioning a space including the stage, surrounded by the surface plate and the mount;
A laser interferometer for measuring the position of the stage having an optical path in the space;
A projection optical system that is supported by the gantry and projects the pattern of the original plate onto the substrate ;
The detection means re-images a photoelectric detection means, a light projecting optical system that projects a pattern on the original or the substrate, and an image of the pattern projected on the original or the substrate on the photoelectric detection means. A first part including the photoelectric detection means is supported by the gantry outside the space, and the other second part is supported by the gantry in the space, The re-image is performed through a hole in the gantry,
A cooling mechanism for cooling the first portion;
An exposure apparatus characterized by that. The exposure apparatus according to claim 1 , wherein the cooling mechanism includes an exhaust mechanism. The cooling mechanism, an exposure apparatus according to the first portion and including a cooling pipe provided between said frame, any one of claims 1 or 2, characterized in that. The laser interferometer, the exposure apparatus according to any one of claims 1 to 3, characterized in that is supported by the cradle. A step of exposing a substrate using an exposure apparatus according to any of claims 1 to 4,
Developing the substrate exposed in the step;
A device manufacturing method comprising:

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