JP2001297961A - Projection aligner - Google Patents

Abstract

PROBLEM TO BE SOLVED: To quickly calculate original transmissibility even if the region is different for each shot, and to accurately correct the amount of fluctuation in optical characteristics. SOLUTION: To a projection image on the entire surface of a reticle 2 as an original, a storage 9 stores entire light quantity data, and a CPU 8 is provided, where the CPU 8 includes a means that calculates an actual reticle exposure part according to the opening/closing of a masking blade 6, a means that extracts light quantity system measured data at the reticle exposure part according to the light quantity data in the storage 9, and a means that calculates reticle transmissibility according to the extracted quantity-of-light data. The pattern of the reticle 2 is projected onto a water of a body to be exposed to light for transfer.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus used in a process for manufacturing devices such as semiconductor devices such as ICs and LSIs, imaging devices such as CCDs, display devices such as liquid crystal panels, and devices such as magnetic heads. Is used when a circuit pattern for a semiconductor device formed on a reticle or a photomask (hereinafter, collectively referred to as a reticle) as a master is projected or exposed at a predetermined magnification to a photosensitive layer on an object to be exposed such as a wafer. Has a function to determine the reticle transmittance,
The present invention relates to an exposure apparatus used in a lithography process and a device manufacturing method using the exposure apparatus.

[0002]

2. Description of the Related Art Generally, when a circuit pattern for a semiconductor device on a reticle surface is projected onto a wafer surface via a projection optical system, a projection pattern is used for exposing the reticle pattern onto the wafer for resolution performance. Not only the exposure wavelength and NA (numerical aperture) of the projection optical system, but also the projection surface (wafer surface)
The illuminance unevenness above and the degree of illuminance have a large effect.

Focusing on the illuminance, if the illuminance on the projection surface is different for each reticle in each process, the degree of heat absorption of the projection optical system is different, so that the resolution characteristics of the pattern,
For example, a change occurs in a focus position, an imaging magnification, distortion, and the like. Therefore, an optimum correction coefficient (hereinafter, referred to as an “optimum exposure coefficient”) for correcting a change in the characteristics of the projection optical system and transferring the same onto the wafer surface with high accuracy also differs. In a normal semiconductor exposure process, in order to expose and transfer a pattern of a plurality of reticles on one wafer, it is necessary to manage the reticle transmittance (pattern density) for each process reticle.

Conventionally, in a semiconductor exposure apparatus, particularly a stepper, when measuring the transmittance of a reticle, as shown in FIG. 10, for example, a pattern of a reticle 62 illuminated by an illumination optical system 61 is projected onto a projection lens 63. A method is used in which the light is projected onto a moving stage 64 via a light source, and the amount of light of the projected image is measured while the moving stage 64 is slightly moved by a photodetector 66 provided on the moving stage 64. This photo detector 6
6, a pinhole 72 of about 0.3 mmφ is arranged above the detector 71, as shown in FIG. In the above configuration, for example, when measuring the transmittance of the reticle 62, as shown in FIG.
While moving the moving stage 64 at a pitch of 0.2 mm each in the Y direction, the light amount of each point is measured up to the last Pn point in the order of P1, P2, P3, and so on. The transmittance of the reticle is measured by comparing the amount of light with no reticle 62.

In recent years, a projection optical system having a high resolving power has been required in a projection exposure apparatus due to a demand for finer patterns and higher integration of semiconductor elements, LSI elements, super LSI elements and the like. As the NA of the image forming optical system increases, the depth of focus of the image forming optical system is becoming shallower. Therefore, in the reduction projection exposure apparatus, an effective automatic focusing method for matching the wafer surface with the image plane of the projection optical system is an important theme.

[0006] In this type of projection exposure apparatus, for example, as proposed in JP-A-9-63948,
Changes in the image plane position and projection magnification due to changes in the ambient temperature of the projection optical system, changes in the atmospheric pressure, increases in temperature due to light rays applied to the projection optical system, or increases in temperature due to heat generation in the apparatus including the projection optical system. In addition to the system-specific constants, the total amount of light transmitted through the reticle pattern and the time required for exposure are predicted using a calculation formula with parameters, and the wafer stage drive and projection optical system are adjusted to correct these fluctuations. The lens is being driven.

Here, in order to calculate the total amount of light transmitted through the reticle pattern, it is necessary to measure and calculate the transmittance of the reticle in advance. When measuring the reticle transmittance, for example, with reference to FIG. 6, the pattern of the reticle 12 is projected onto the stage 17 via the projection optical system 14, and the light amount is projected by the photodetector 7 configured on the stage 17. A method of measuring while moving the stage 17 minutely is used.

As the photodetector, a photodetector for measuring the illuminance distribution of the projection optical system is used, and has a configuration in which a pinhole of about 0.3 mmφ is arranged as described above.

In the above configuration, for example, the reticle 10
When measuring the transmittance in a 0 mm square area, referring to FIG. 7, while moving the stage at a pitch of 0.2 mm in each of the X and Y directions, each measurement point P1, P2, P3,.
The reticle transmittance is calculated by measuring the light amount at Pn and comparing the integrated light amount value of the light amount with the integrated light amount value when no reticle is mounted.

For each reticle, the reticle transmittance measured in a predetermined area is measured once, stored in a memory, and the correction amount of the optical characteristic is calculated for each exposure shot.

[0011]

However, in actual exposure, the entire reticle is not always used, and a part of the reticle surface may be used by moving a masking blade. In this case, the time-consuming transmittance measurement is performed again while the masking blade is being moved, or the transmittance calculated from the entire surface (or calculated in advance) on the assumption that the optimum resolution characteristics are not corrected. I was using the rate.

In the reticle transmittance measured by the above method, when the pattern density is not uniform, that is, the pattern distribution changes depending on the area of the reticle, and the reticle transmittance changes. As a result, when the exposure area is different for each shot such as TEG, the correction amount of the optical characteristic is calculated using the fixed reticle transmittance, so that the optical characteristic such as the image forming position and magnification of the projection optical system is calculated. In some cases, the amount of fluctuation could not be accurately corrected.

Further, when the reticle transmittance is measured again for each exposure area, it takes a long time.

An object of the present invention is to provide an exposure apparatus capable of calculating a reticle transmittance in a short time and accurately correcting a variation in optical characteristics even when an area is different for each shot.

[0015]

In order to achieve the above object, the present invention provides an exposure apparatus for projecting a pattern of an original onto an object to be exposed, and exposing and transferring the same. Means for storing the total light quantity measurement data in the storage device, means for calculating the actual original exposure portion from opening and closing of the masking blade, and light quantity measurement data for the original exposure portion extracted from the light quantity measurement data in the storage device Means, and means for calculating the original transmittance from the extracted light quantity data. As a result, the optimum transmittance of the original surface to be actually exposed can be calculated in a short time, and the optimum resolution characteristic correction is performed.

According to another aspect of the present invention, there is provided an exposure apparatus for projecting an original pattern onto an object to be exposed by a projection optical system and exposing and transferring the pattern. And a means for calculating an original transmittance for each exposure area.

Also, a projection optical system for projecting a pattern of an original illuminated by exposure light onto an object to be exposed, and an optical characteristic prediction for predicting, based on a calculation formula, a variation in optical characteristics caused in the projection optical system by the projection. Means, and a projection exposure apparatus having an original transmittance measurement means for measuring the transmittance of the original, a data storage means for storing two-dimensional light quantity data measured by the original transmittance measurement means as data for each original, and An original transmittance correction unit for correcting the original transmittance based on the exposure area for each shot and the two-dimensional light amount data held by the data storage unit, and the optical characteristic predicting unit corrects the original transmittance for each shot. It is desirable to predict the fluctuation amount of the optical characteristics by using.

Further, the optical characteristic correcting means may move the object to be exposed in parallel with the optical axis of the projection optical system so that the image plane of the projection optical system and the surface of the object to be exposed coincide. preferable.

[0019]

In the above arrangement, when exposure is performed using a certain master, the optical characteristics of the projection optical system gradually change due to the influence of exposure light and the like. Is corrected based on

The two-dimensional light quantity data measured by the original transmittance measuring means is stored by the data storing means as a value unique to the original for each original. Therefore, when using the original plate in which the light amount data is once stored, the original plate transmittance is calculated for each shot from the light amount data, so that it is not necessary to measure the transmittance again. Correction is made and the optical properties are kept constant.

[0021]

(First Embodiment) FIG. 1 is a view showing the arrangement of a scanning type exposure apparatus according to a first embodiment of the present invention, wherein 1 is an illumination optical system for emitting exposure light, and 2 is illuminated thereby. A projection optical system for projecting the illuminated reticle 2 pattern onto a wafer as an object to be exposed, 4 a moving stage, and 5 a chuck provided on the moving stage 4 for mounting the wafer. , 6 are masking blades for masking illumination light according to various exposures. The masking blade 6 can freely change the illuminating range of the reticle 2. Reference numeral 7 denotes a photodetector for measuring light from the projection optical system 3 provided on the moving stage 4. 8 is a CPU for calculating the transmittance of the reticle surface to be exposed, based on the amount of movement of the masking blade 6,
9 is a memory for storing the measured light quantity of each point, an HDD
And the like.

When the transmittance is measured, a pattern on the entire surface of the reticle 2 is projected onto a moving stage 4 via a projection optical system 3, and the amount of the projected image is measured by a photodetector 7 provided on the moving stage 4. The measurement is performed while the moving stage 4 is slightly moved, and the measured light amount is sequentially stored in the storage device 9. After the measurement is completed, the CPU 8 extracts light amount measurement data of the reticle exposed portion from the light amount measurement data in the storage device 9 and calculates a reticle transmittance from the extracted light amount data.

At this time, the total light amount data at the measurement points shown in FIG. 12 is stored in the storage device 9 as shown in FIG.

Symbols P1, P2, P3,... Shown in FIG.
Pn is a symbol P1, P2, P3... Pn in FIG.
Corresponding to

Here, when the masking blade 31 is opened and closed as shown by an open state 31a and a closed state 31b as shown in FIG. 3, the exposure surface of the reticle 32 is also opened and closed. It changes to the exposure surface 32b in the state.
Conventionally, each time the masking blade is opened and closed, the time-consuming reticle transmittance measurement process has to be performed again.

In this embodiment, as shown in FIG. 4, the masking blade 41 opens and closes between an open state 41a and a closed state 41b, and in response to this opening and closing, the exposure surface of the reticle 42 is opened and closed. When the exposure surface 42b changes to the exposure surface 42b in the closed state, data 43a and 43b corresponding to the reticle exposure surfaces 42a and 42b are extracted from the data 43 stored in the storage device 9 as shown in 43a and 43b. Recalculate the transmittance. Thereby, the reticle transmittance calculation at the time of opening and closing the masking blade is performed at high speed.

FIG. 5 is a flowchart showing the processing in this embodiment. In step 51, the light amount at the sampling point is measured with respect to the projected image of the entire reticle, and in step 52, the measured total light amount data is recorded in a storage device.
In step 53, the reticle surface to be exposed is calculated by opening and closing the masking blade. In step 54, data corresponding to the reticle surface to be exposed is extracted from the light amount data stored in the storage device. The reticle transmittance is recalculated from the extracted light quantity data.

(Second Embodiment) FIG. 6 is a view showing a configuration of a projection exposure apparatus according to a second embodiment of the present invention. In the figure, 11 is an illumination optical system, 12 is a reticle on which a device pattern is formed, 13 is a reticle stage, 14
Is a projection optical system for reducing and projecting the device pattern of the reticle 12, 15 is a wafer onto which the device pattern is projected and transferred, 16 is a wafer chuck holding the wafer 15,
Reference numeral 17 denotes an XYZ stage that holds the wafer chuck 16 and moves two-dimensionally along a plane orthogonal to the optical axis 25 and is also movable in the direction of the optical axis 25. Reference numeral 18 denotes a projection optical system 14 and an XYZ stage 17 Is the surface plate on which is placed, 19 is XY
A stage control unit that controls the operation of the Z stage 17.

Reference numerals 20 and 21 denote an autofocus detection system for detecting the position of the surface of the wafer 15 in the optical axis direction.
20 is an illuminating device for illuminating the wafer 15, 21 is the wafer 1
A light receiving device 22 receives the reflected light from the surface of the wafer 5, and outputs a signal corresponding to the position of the surface of the wafer 15 in the direction of the optical axis 25. Reference numeral 22 denotes a control unit of an autofocus system.

Reference numeral 23 denotes an illuminometer using a photodetector as a light receiving unit and a pinhole disposed above the photodetector. The illuminometer 23 and the light amount data measuring unit 26 measure the amount of light.

In the projection exposure apparatus shown in FIG.
The operation for measuring the reticle transmittance of the second circuit pattern will be described.

In a state where the reticle is not mounted on the reticle stage 13, the main controller 24 drives a masking blade (not shown) to the effective exposure area position, and moves the masking blade (not shown) to the circuit pattern area shown in FIG. XYZ stage 1 so that the aforementioned photodetector is located at the measurement position
7 is driven at a pitch of 0.2 mm in each of the X and Y directions, while the reticle transmittance measuring unit 29 measures the measurement points P1, P2,
In P3,... Pn, light amount values D1, D2,.
Measure Dn.

Next, the main control section 24 conveys the reticle 12, on which the circuit pattern to be exposed is drawn, from the reticle cassette (not shown) to the reticle stage 13 by the conveying means and sets it.

At this time, the reticle 12 is aligned with a mark (not shown) on the reticle stage 13.

Similarly, while driving the XYZ stage 17 at a pitch of 0.2 mm in each of the X direction and the Y direction, the reticle transmittance measuring section 29 measures the measurement points P1, P2, P3,.
, The light intensity values d1, d2,... Dn are measured.
It is desirable that the X and Y drive pitches be as small as possible in terms of accuracy. The reticle transmittance is calculated using the integrated amount of light and the ratio between the case where the reticle is mounted and the case where the reticle is not mounted, that is, the following formula (1).

[0036]

(Equation 1)

Further, for each reticle, light amount data d1, d2,... Dn measured in a predetermined area are stored in a memory by a reticle data storage unit 27.

Next, in the projection exposure apparatus shown in FIG.
The operation of correcting the variation of the projection optical system characteristic due to the exposure light exposure when the circuit pattern of the reticle 12 is sequentially exposed on the wafer 15 will be described.

The main control unit 24 includes a reticle data storage unit 2
7 to the main control unit 24, data of the reticle 12 such as two-dimensional light amount data and mark information in the reticle transmittance measurement, and shot information such as an exposure amount and an exposure area from the shot information storage unit 28.

Then, the wafer 15 is transferred from a wafer cassette (not shown) by a wafer transfer system, and is pre-aligned, that is, roughly aligned, and then sucked onto a wafer chuck 16.

When the wafer 15 is moved to the first shot position, the height of the surface of the wafer 15 in the direction of the optical axis 25 is measured by the autofocus detection systems 20 and 21 so that the height coincides with the focus position of the projection optical system 14. Then, the XYZ stage 17 is driven in the direction of the optical axis 25 to focus the wafer 15.

Next, exposure is performed with an appropriate exposure amount from the illumination optical system 11, and an image of a circuit pattern of the reticle 12 is formed on the photosensitive material applied on the wafer 15 via the projection optical system 14. When the exposure of the first shot is completed, the XYZ stage 17 is moved so that the next shot position comes to the exposure position, and focusing and exposure are performed as in the first shot. When exposure of all shots of the wafer 15 is completed in this way, the wafer 15 is collected into a collection wafer cassette (not shown), and the next wafer 15 is
Set to 6 and adsorb.

At the time of such exposure, a part of the light energy incident on the projection optical system 14 is absorbed by the optical element of the projection optical system 14 and the temperature of the optical element rises. Optical properties change with exposure. The main control unit 24 predicts the change of the optical characteristics by the optical characteristic prediction unit 36, sends an offset corresponding to the predicted value to the auto focus control unit 22 according to the result, and the stage control unit 19 controls the surface of the wafer 15. Is controlled so as to coincide with the focus position of the projection optical system 14. Main control unit 24
Captures a parameter for calculating the amount of change.

The parameters are the opening / closing time of a shutter (not shown) of the illumination optical system 11, that is, the exposure time t, the time t 'between exposures, the illumination range of the illumination optical system 11, the illuminance, and the like.
A light amount QD calculated from the transmittance of the reticle 12, a coefficient Da unique to each reticle, and the like.

The optical characteristic predicting section 36 predicts a change in optical characteristics during repeated exposure from these parameters and coefficients set in the apparatus. Taking the change ΔF1 of the focus position of the projection optical system 14 as an example, it is calculated by the following equations (2), (3), and (4). (2) ΔF = ΔF1 + ΔF2 (3) ΔF1 = SF · QD · Da · DT (4) ΔF2 = −ΔF ′ · exp (−kF · t)

Here, SF is a proportional constant, QD is a parameter corresponding to the total amount of light passing through the circuit pattern,
Is a coefficient specific to each reticle, DT is a ratio of time during which the shutter is open during a unit time of calculation, and kF is a parameter representing heat conduction of an optical element of the projection optical system 14. △
F ′ is a change amount of the focus position of the projection optical system 14 calculated in the immediately preceding unit time. ΔF1 is the amount of change in the focal plane per unit time due to heat absorption of the projection optical system 14, ΔF1
Reference numeral 2 denotes a fluctuation amount of the focus surface per unit time due to heat radiation of the projection optical system 14.

The prediction calculation by the optical characteristic prediction unit 36 is sequentially repeated for each shot. The correction of the reticle transmittance when the exposure area differs for each shot will be described with reference to FIGS. 7 and 9. Information on the exposure area loaded from the shot information storage unit 28, for example, the reticle 1 shown in FIG.
2, when the circuit pattern area A in the entire circuit pattern P is exposed, the reticle transmittance correction unit 30 loads the light amount data d1, d2,... Dn at the time of reticle transmittance measurement loaded from the data storage unit 27. Using the light quantity data d1, d2,... Dk corresponding to the measurement positions P1, P2,... Pk included in the set exposure area, the reticle transmittance is calculated by the following equation (5). Do.

[0048]

(Equation 2)

Using the reticle transmittance Tr ′, the amount of change in the optical characteristics in the exposure area A is calculated using the above equation (2),
It is calculated from (3) and (4).

Next, referring to FIG. 9, when the exposure area loaded from the shot information storage unit exposes the circuit pattern B area, the reticle transmittance correction unit 30 similarly sets the reticle transmittance loaded from the data storage unit 27. Using the light amount data d1, d2,... Dn corresponding to the measurement positions P1, P2,... Pn included in the set exposure area from the light amount data d1, d2,. The calculation of the reticle transmittance Tr is performed using the above equation (1).

The amount of change in the optical characteristics in the exposure area B is similarly calculated from the above equations (2), (3) and (4) using the reticle transmittance Tr.

The reticle transmittance correction unit 30 calculates the reticle transmittance from the shot information loaded from the shot information storage unit 28 for each shot, calculates the amount of change in the focus position of the projection optical system 14, and performs autofocus detection. System 2
By driving the XYZ stage 17 so that the position of the wafer 15 in the direction of the optical axis 25 measured at 0, 21 coincides with the fluctuation amount calculated by the optical characteristic prediction unit 36, the wafer 15 Coincides with the imaging plane of

(Third Embodiment) FIG. 8 is a diagram showing a configuration of a reticle transmittance measurement in a scanning exposure apparatus according to a third embodiment of the present invention. In the case of this scanning type exposure apparatus,
Light receiving elements 37 one-dimensionally arranged in the scanning direction are used as an illuminometer.

With this configuration, when measuring the light intensity in the illumination area, as shown in FIG. 8, the light receiving element 37 is located at a position where the length of the rectangular illumination area S in the scanning direction can be covered.
The YZ stage 17 is driven.

The reticle stage 13 is driven so that the illumination area S scans the entire surface of the reticle, and the light amount is measured. Thus, two-dimensional light amount data at each position of the reticle stage 13 can be obtained.

In the case of this embodiment, as in the second embodiment, it is possible to calculate the reticle transmittance for each shot and correct the amount of change in the optical characteristics by the above formula.

(Embodiment of Semiconductor Production System) Next, using the exposure apparatus according to the present invention, semiconductor devices (semiconductor chips such as IC and LSI, liquid crystal panels, CCDs, thin film magnetic heads, micromachines, etc.) are produced. An example of a production system will be described. In this system, maintenance services such as troubleshooting and periodic maintenance of a manufacturing apparatus installed in a semiconductor manufacturing factory or provision of software are performed using a computer network outside the manufacturing factory.

FIG. 13 shows the whole system cut out from a certain angle. In the figure, reference numeral 101 denotes a business establishment of a vendor (apparatus supply maker) that provides a semiconductor device manufacturing apparatus. Examples of manufacturing equipment include semiconductor manufacturing equipment for various processes used in a semiconductor manufacturing plant, such as pre-processing equipment (lithography equipment such as exposure equipment, resist processing equipment, etching equipment, heat treatment equipment, film formation equipment, flattening equipment, etc.). Equipment and post-process equipment (assembly equipment, inspection equipment, etc.). A host management system 1 that provides a maintenance database for manufacturing equipment in the business office 101
08, a plurality of operation terminal computers 110, and a local area network (LAN) 109 connecting these to construct an intranet or the like. The host management system 108 has a gateway for connecting the LAN 109 to the Internet 105, which is an external network of the office, and a security function for restricting external access.

On the other hand, 102 to 104 are manufacturing factories of a semiconductor manufacturer as users of the manufacturing apparatus. The manufacturing factories 102 to 104 may be factories belonging to different manufacturers or factories belonging to the same manufacturer (for example, a factory for a pre-process, a factory for a post-process, etc.). In each of the factories 102 to 104, a plurality of manufacturing apparatuses 106, a local area network (LAN) 111 connecting them to construct an intranet or the like, and a host as a monitoring apparatus for monitoring the operation status of each manufacturing apparatus 106 are provided. A management system 107 is provided. Each factory 1
Host management system 107 provided in the storage system 02 to 104
Has a gateway for connecting the LAN 111 in each factory to the Internet 105 which is an external network of the factory. As a result, access to the host management system 108 on the vendor 101 side from the LAN 111 of each factory via the Internet 105 is possible, and access is allowed only to limited users by the security function of the host management system 108. In particular,
Via the Internet 105, status information indicating the operation status of each manufacturing apparatus 106 (for example, the symptom of the manufacturing apparatus in which a trouble has occurred) is notified from the factory side to the vendor side, and response information corresponding to the notification (for example, (Information indicating how to cope with a trouble, software and data for coping), and maintenance information such as the latest software and help information can be received from the vendor. For data communication between each of the factories 102 to 104 and the vendor 101 and data communication with the LAN 111 in each of the factories, a communication protocol (T
CP / IP) is used. Instead of using the Internet as an external network outside the factory, it is also possible to use a dedicated line network (such as ISDN) that cannot be accessed by a third party and has high security. Further, the host management system is not limited to the one provided by the vendor, and a user may construct a database and place it on an external network, and permit access from a plurality of factories of the user to the database.

FIG. 14 is a conceptual diagram showing the whole system of the present embodiment cut out from a different angle from FIG. In the above example, a plurality of user factories each having a manufacturing device and a management system of a vendor of the manufacturing device are connected via an external network, and the production management of each factory and at least one device are connected via the external network. The data of the manufacturing apparatus was communicated. On the other hand, in this example, a factory equipped with manufacturing equipment of a plurality of vendors is connected to a management system of each of the plurality of manufacturing equipments via an external network outside the factory, and maintenance information of each manufacturing equipment is stored. It is for data communication. In the figure, reference numeral 201 denotes a manufacturing plant of a manufacturing apparatus user (semiconductor device manufacturer), and a manufacturing line for performing various processes, for example, an exposure apparatus 202, a resist processing apparatus 203;
A film forming apparatus 204 is introduced. Although only one manufacturing factory 201 is illustrated in FIG. 14, a plurality of factories are actually networked similarly. Each device in the factory is connected by a LAN 206 to form an intranet or the like, and a host management system 205 manages the operation of the production line. On the other hand, each business establishment of a vendor (apparatus maker) such as an exposure apparatus maker 210, a resist processing apparatus maker 220, and a film forming apparatus maker 230 has a host management system 2 for performing remote maintenance of the supplied equipment.
11, 221 and 231 which comprise a maintenance database and an external network gateway as described above. The host management system 205 that manages each device in the user's manufacturing factory and the vendor management systems 211, 221, and 231 of each device are connected to the external network 20.
0 or a dedicated line network. In this system, if a trouble occurs in any of a series of manufacturing equipment in the manufacturing line, the operation of the manufacturing line is stopped, but remote maintenance is performed from the vendor of the troubled equipment via the Internet 200. As a result, quick response is possible, and downtime of the production line can be minimized.

Each of the manufacturing apparatuses installed in the semiconductor manufacturing factory has a display, a network interface, and a computer for executing network access software and apparatus operation software stored in a storage device. The storage device is a built-in memory, a hard disk, a network file server, or the like. The network access software includes a dedicated or general-purpose web browser, and provides, for example, a user interface having a screen as shown in FIG. 15 on a display. The operator who manages the manufacturing equipment at each factory refers to the screen and refers to the manufacturing equipment model 401, the serial number 402, the trouble subject 4
03, date of occurrence 404, degree of urgency 405, symptom 406, coping method 407, progress 408, and other information are input to input items on the screen. The input information is transmitted to the maintenance database via the Internet, and the resulting appropriate maintenance information is returned from the maintenance database and presented on the display. Further, the user interface provided by the web browser further includes a hyperlink function 410 as shown in the figure.
412, the operator can access more detailed information of each item, extract the latest version of software used for manufacturing equipment from the software library provided by the vendor, and operate the operation guide (help Information). Here, the maintenance information provided by the maintenance database includes the information on the present invention described above, and the software library also provides the latest software for realizing the present invention.

Next, a process for manufacturing a semiconductor device using the above-described production system will be described. FIG. 16 shows a flow of the entire semiconductor device manufacturing process.
In step 1 (circuit design), the circuit of the semiconductor device is designed. Step 2 is a process for making a mask on the basis of the circuit pattern design. On the other hand, in step 3 (wafer manufacturing), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer.
The next step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer produced in step 4, and assembly such as an assembly process (dicing and bonding) and a packaging process (chip encapsulation). Process. In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, a semiconductor device is completed and shipped (step 7). The pre-process and the post-process are performed in separate dedicated factories, and maintenance is performed for each of these factories by the above-described remote maintenance system. Further, information for production management and apparatus maintenance is also communicated between the pre-process factory and the post-process factory via the Internet or a dedicated line network.

FIG. 17 shows a detailed flow of the wafer process. Step 11 (oxidation) oxidizes the wafer's surface. Step 12 (CVD) forms an insulating film on the wafer surface. Step 13 (electrode formation) forms electrodes on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. Step 1
In 5 (resist processing), a photosensitive agent is applied to the wafer. In step 16 (exposure), the circuit pattern of the mask is printed and exposed on the wafer by the exposure apparatus according to the present invention described above. Step 17 (development) develops the exposed wafer. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer. Since the manufacturing equipment used in each process is maintained by the remote maintenance system described above, troubles can be prevented beforehand, and if troubles occur, quick recovery is possible. Productivity can be improved.

[0064]

As described above, according to the present invention,
The optimum transmittance of the original surface to be actually exposed can be calculated in a short time, and the optimum resolution characteristic correction is performed. Further, according to the present invention, even when the exposure area is different for each shot, the original transmittance can be calculated in a short time, and the fluctuation amount of the optical characteristics can be accurately corrected.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram showing a scanning exposure apparatus according to a first embodiment of the present invention.

FIG. 2 is a diagram showing light amount measurement data in a storage device.

FIG. 3 is a diagram showing the correspondence between opening and closing of a masking blade and a reticle exposure surface.

FIG. 4 is a diagram for explaining an operation of the scanning exposure apparatus according to the first embodiment of the present invention.

FIG. 5 is a diagram showing a processing flow according to the first embodiment of the present invention.

FIG. 6 is a configuration diagram showing an exposure apparatus according to a second embodiment of the present invention.

FIG. 7 is a diagram showing a measurement of a reticle transmittance in an exposure apparatus.

FIG. 8 is a diagram illustrating an example of a measurement result of a reticle transmittance in an exposure apparatus according to a second embodiment of the present invention.

9 is a diagram showing a layout of a reticle pattern transferred in the exposure apparatus shown in FIG.

FIG. 10 is a schematic configuration diagram of a scanning exposure apparatus according to a conventional example.

11 is a diagram showing a photodetector for measuring transmittance in the device of FIG.

FIG. 12 is a view for explaining a method of measuring the transmittance in the exposure apparatus shown in FIG.

FIG. 13 is a conceptual view of a semiconductor device production system using an exposure apparatus according to the present invention, as viewed from a certain angle.

FIG. 14 is a conceptual diagram of a semiconductor device production system using the exposure apparatus according to the present invention, as viewed from another angle.

FIG. 15 is a diagram illustrating a specific example of a user interface.

FIG. 16 is a diagram illustrating a flow of a device manufacturing process.

FIG. 17 is a diagram illustrating a wafer process.

[Explanation of symbols]

1: illumination optical system, 2: reticle (original plate), 3: projection optical system, 4: moving stage, 5: chuck, 6: masking blade, 7: photodetector, 8: CPU, 9: storage device, 11: illumination optics System, 12: reticle (original),
13: reticle stage, 14: projection optical system, 15: wafer (subject to be exposed), 16: wafer chuck, 17: XY
Z stage, 18: surface plate, 19: stage control unit, 2
0, 21: autofocus detection system, 22: autofocus control unit, 23: illuminometer, 24: main control unit, 25:
Optical axis, 26: light amount data measurement unit, 27: reticle data storage unit, 28: shot information storage unit, 29: reticle transmittance measurement unit, 30: reticle transmittance correction unit, 31: masking blade, 32: reticle, 36 : Optical characteristic prediction unit, 37: light receiving element.

Claims (14)

[Claims] 1. An exposure apparatus for projecting a pattern of an original onto an object to be exposed and exposing and transferring the same, wherein means for storing total light quantity measurement data in a storage device with respect to a projected image of the entire surface of the original, and opening and closing of a masking blade. Means for calculating the actual original exposure portion, and from the light intensity measurement data in the storage device,
An exposure apparatus comprising: means for extracting light amount measurement data of an original exposure portion; and means for calculating an original transmittance from the extracted light amount data. 2. An exposure apparatus for projecting a pattern of an original onto an object to be exposed by a projection optical system and exposing and transferring the pattern, wherein the amount of change in optical characteristics generated in the projection optical system due to the projection is determined for each exposure area based on an exposure history. An exposure apparatus, comprising: an optical characteristic predicting unit for predicting a position of a subject. 3. The exposure apparatus according to claim 2, wherein the optical characteristic prediction unit predicts an optical characteristic change based on an original transmittance calculated for each exposure area. 4. An optical characteristic correction unit for correcting the optical characteristics according to a prediction result of the optical characteristic prediction unit, an original transmittance measurement unit for measuring an original transmittance, and correcting the original transmittance for each shot. 3. An optical characteristic predicting means, comprising: an optical property predicting means for predicting a variation amount of an optical property using an original transmittance corrected for each shot. Exposure equipment. 5. A data storage means for storing light quantity data measured by the original transmittance measurement means as data for each original, wherein the data storage means holds the light quantity data for each original. Claim 4
3. The exposure apparatus according to claim 1. 6. The optical characteristic correction unit moves the object to be exposed in a direction parallel to an optical axis of the projection optical system to thereby move an image forming surface of the projection optical system and a surface of the object to be exposed. 5. The exposure apparatus according to claim 4, wherein the exposure apparatus and the exposure apparatus are set to coincide with each other. 7. An exposure apparatus for projecting an original pattern onto an object to be exposed by a projection optical system and exposing and transferring the same, comprising means for calculating an original transmittance for each exposure area. 8. A process for installing a manufacturing apparatus group for various processes including the exposure apparatus according to claim 1 in a semiconductor manufacturing factory, and a semiconductor device by a plurality of processes using the manufacturing apparatus group. Manufacturing a semiconductor device. 9. A step of connecting the manufacturing equipment group via a local area network, and data communication between at least one of the manufacturing equipment group between the local area network and an external network outside the semiconductor manufacturing factory. The method according to claim 8, further comprising the step of: 10. A semiconductor manufacturing factory different from the semiconductor manufacturing factory by accessing a database provided by a vendor or a user of the exposure apparatus via the external network to obtain maintenance information of the manufacturing apparatus by data communication. 10. The method of manufacturing a semiconductor device according to claim 9, wherein data is communicated with the device via the external network to perform production management. 11. A manufacturing apparatus group for various processes including the exposure apparatus according to claim 1, a local area network connecting the manufacturing apparatus group, and an external device outside the factory from the local area network. A semiconductor manufacturing plant, comprising: a gateway enabling access to a network; and capable of performing data communication of information on at least one of the manufacturing apparatus groups. 12. The semiconductor device according to claim 1, which is installed in a semiconductor manufacturing plant.
The maintenance method for an exposure apparatus according to any one of claims 1 to 7,
A step of providing a maintenance database connected to an external network of a semiconductor manufacturing plant by a vendor or a user of the exposure apparatus, and a step of permitting access to the maintenance database from the inside of the semiconductor manufacturing plant via the external network. Transmitting the maintenance information stored in the maintenance database to the semiconductor manufacturing factory via the external network. 13. The exposure apparatus according to claim 1, further comprising a display, a network interface, and a computer that executes network software, and stores maintenance information of the exposure apparatus via a computer network. An exposure apparatus characterized in that data communication can be performed by using the same. 14. The network software,
Provided on the display is a user interface for accessing a maintenance database provided by a vendor or a user of the exposure apparatus connected to an external network of a factory where the exposure apparatus is installed, and from the database via the external network. 14. The exposure apparatus according to claim 13, wherein information can be obtained.