JPH04305917A - Adhesion type exposure device - Google Patents
Adhesion type exposure deviceInfo
- Publication number
- JPH04305917A JPH04305917A JP3094863A JP9486391A JPH04305917A JP H04305917 A JPH04305917 A JP H04305917A JP 3094863 A JP3094863 A JP 3094863A JP 9486391 A JP9486391 A JP 9486391A JP H04305917 A JPH04305917 A JP H04305917A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- immersion liquid
- hydrophilic
- photomask
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007788 liquid Substances 0.000 claims abstract description 26
- 238000007654 immersion Methods 0.000 claims abstract description 25
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 15
- 230000003287 optical effect Effects 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000853 adhesive Substances 0.000 abstract 3
- 230000001070 adhesive effect Effects 0.000 abstract 3
- 239000010408 film Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
Abstract
PURPOSE:To thin film thickness of an immersion liquid and reduce the quantity of light absorbed, and to minimize and prevent exposure unevenness in an adhesion type exposure device. CONSTITUTION:The adhesive surface 11 of an exposure lens is hydrophilic- treated by a hydrophilic solution such as alcohol. A wafer 3 coated with a photoresist 4 is fast stuck on the hydrophilic-treated adhesive surface 11 through an immersion liquid 5, and the pattern 7 of a photomask 1 is transferred onto the wafer 3 by the irradiation of irradiation light 6. Wafer absorbing properties are improved in the hydrophilic-treated adhesive surface 11, and the film thickness of the immersion liquid 5 is made thin.
Description
【０００１】0001
【産業上の利用分野】本発明は、ＬＳＩの製造工程にお
いて、フォトマスク上のパターンをウエハ上に投影露光
する露光装置、特に密着型露光装置に関するものである
。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus for projecting and exposing a pattern on a photomask onto a wafer in an LSI manufacturing process, and particularly to a contact type exposure apparatus.
【０００２】0002
【従来の技術】レ−ザー光等を照射しフォトマスク上の
パターンを投影光学系によってシリコンウエハ等の半導
体基板上に投影露光するこの種の露光装置における露光
方式としては、■密着（コンタクト）露光方式、■プロ
キシミティ露光方式、■反射型投影露光方式、■縮小レ
ンズ投影露光方式の４方式が知られている。[Prior Art] The exposure methods used in this type of exposure apparatus, which irradiates a laser beam or the like and projects a pattern on a photomask onto a semiconductor substrate such as a silicon wafer using a projection optical system, are as follows: ■Contact (contact) There are four known methods: (1) proximity exposure method, (2) reflective projection exposure method, and (2) reduction lens projection exposure method.
【０００３】このうち密着露光方式は、フォトマスク（
または投影光学系）とウエハとを密着させて露光するも
ので、これらが完全に密着している場合には、フォトレ
ジスト中の波長が屈折率分の１に短くなるため、回折の
影響が少なく、高解像度の転写が得られるという特色を
有している。しかし、完全な密着を実現することは極め
て難しく、またフォトマスクとウエハとを機械的に接触
させているためにウエハ表面の突起等によりフォトマス
クに欠陥が生じ、その寿命を低下させると同時にデバイ
スの歩留りに影響を及ぼすといった問題があった。Among these, the contact exposure method uses a photomask (
(or projection optical system) and the wafer are brought into close contact with each other for exposure. When these are in perfect contact, the wavelength in the photoresist is shortened by a factor of the refractive index, so the influence of diffraction is reduced. , it has the feature of being able to obtain high-resolution transfer. However, it is extremely difficult to achieve complete adhesion, and since the photomask and wafer are in mechanical contact, protrusions on the wafer surface can cause defects in the photomask, shortening its lifespan and reducing the device life. There was a problem that the yield was affected.
【０００４】そこで、密着露光方式によるこのような問
題を解決する方法としてフォトマスクとウエハ間に液体
（浸液）を充填している。図２は投影光学系にウエハを
密着させた場合を示すもので、１はフォトマスク、２は
投影光学系の一部を構成する露光レンズ、３はフォトレ
ジスト４が塗布されたウエハ、５は露光レンズ２とウエ
ハ３間に充填された浸液、６はフォトマスク１のパター
ン７を照射しフォトレジスト４を露光する照射光、８は
ウエハ３を保持する保持体、９は保持体８を上方に付勢
しウエハ３を露光レンズ２に押し付ける圧縮コイルばね
である。照射光６の波長は短いほど回折の影響が少なく
、そのため光源としてエキシマレーザー等のレーザー装
置が用いられる。浸液５としては、屈折率がフォトレジ
スト４と同程度で光の吸収が少なく、しかもフォトレジ
スト４を溶かさないものが望ましく、通常純水が使用さ
れる。[0004] Therefore, as a method of solving such problems caused by the contact exposure method, a liquid (immersion liquid) is filled between the photomask and the wafer. FIG. 2 shows a case where a wafer is brought into close contact with the projection optical system, where 1 is a photomask, 2 is an exposure lens forming a part of the projection optical system, 3 is a wafer coated with photoresist 4, and 5 is a wafer coated with photoresist 4. An immersion liquid filled between the exposure lens 2 and the wafer 3; 6, irradiation light that irradiates the pattern 7 of the photomask 1 and exposes the photoresist 4; 8, a holder that holds the wafer 3; 9, the holder 8; This is a compression coil spring that biases upward and presses the wafer 3 against the exposure lens 2. The shorter the wavelength of the irradiation light 6, the less the influence of diffraction, and therefore a laser device such as an excimer laser is used as the light source. The immersion liquid 5 is preferably one that has a refractive index similar to that of the photoresist 4, absorbs little light, and does not dissolve the photoresist 4, and usually pure water is used.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、上述し
たような浸液５を使用した密着型露光装置においては、
浸液５自身の膜厚ムラがあると、浸液５による照射光６
の吸収量にムラが生じるため、コンタクト露光されたフ
ォトレジスト４のパターンが的確に露光されている部分
とそうでない部分とが生じてしまうという問題があった
。したがって、このような露光ムラの発生を防止するた
め、浸液５の膜厚ｄ１ を薄くし、光の吸収ムラを少な
くすることが望まれている。[Problems to be Solved by the Invention] However, in the contact type exposure apparatus using the immersion liquid 5 as described above,
If the film thickness of the immersion liquid 5 is uneven, the irradiation light 6 caused by the immersion liquid 5
Since the amount of absorption of the photoresist 4 is uneven, there is a problem in that the pattern of the contact-exposed photoresist 4 has some parts that are properly exposed and other parts that are not. Therefore, in order to prevent the occurrence of such exposure unevenness, it is desired to reduce the film thickness d1 of the immersion liquid 5 to reduce light absorption unevenness.
【０００６】本発明は上述したような従来の問題点およ
び要望に鑑みてなされたもので、その目的とするところ
は、浸液の膜厚を薄くし、露光ムラを軽減防止し得るよ
うにした密着型露光装置を提供することにある。The present invention has been made in view of the above-mentioned conventional problems and demands, and its purpose is to reduce the thickness of the immersion liquid and to reduce and prevent uneven exposure. An object of the present invention is to provide a contact type exposure device.
【０００７】[0007]
【課題を解決するための手段】本発明は上記目的を達成
するため、投影光学系もしくはフォトマスクのウエハ密
着面を親水化処理し、この親水化処理された密着面にフ
ォトレジストを塗布されたウエハを浸液を介して密着さ
せ、照射光の照射によりフォトマスクのパターンを前記
フォトレジストに転写するようにしたものである。[Means for Solving the Problems] In order to achieve the above-mentioned object, the present invention has a structure in which the wafer contact surface of a projection optical system or a photomask is made hydrophilic, and a photoresist is applied to the hydrophilized contact surface. The wafer is brought into close contact with the wafer via an immersion liquid, and the pattern of the photomask is transferred to the photoresist by irradiation with light.
【０００８】[0008]
【作用】本発明において、親水化処理された投影光学系
もしくはフォトマスクのウエハ密着面は、吸水性が向上
し、浸液の膜厚を薄くする。[Function] In the present invention, the wafer adhesion surface of the projection optical system or photomask that has been subjected to hydrophilic treatment has improved water absorption and reduces the film thickness of the immersion liquid.
【０００９】[0009]
【実施例】以下、本発明を図面に示す実施例に基づいて
詳細に説明する。図１は本発明に係る密着型露光装置の
一実施例を示す要部の断面図である。なお、図中図２と
同一構成部品のものに対しては同一符号を以て示し、そ
の説明を省略する。本実施例は投影光学系にウエハを密
着させた場合を示すもので、フォトマスク投影光学系の
一部を構成する露光レンズ２のウエハ密着面１１を予め
親水化処理し、この親水化処理された密着面１１にウエ
ハ３を純水等の浸液５を介して密着させ、照射光６の照
射によりフォトマスク１のパターン７をウエハ３上に転
写するようにしたものである。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be explained in detail below based on embodiments shown in the drawings. FIG. 1 is a sectional view of essential parts of an embodiment of a contact type exposure apparatus according to the present invention. Components in the figure that are the same as those in FIG. 2 are designated by the same reference numerals, and their explanations will be omitted. This example shows a case where a wafer is brought into close contact with the projection optical system, and the wafer contact surface 11 of the exposure lens 2, which constitutes a part of the photomask projection optical system, is preliminarily treated to make it hydrophilic. The wafer 3 is brought into close contact with the contact surface 11 via an immersion liquid 5 such as pure water, and the pattern 7 of the photomask 1 is transferred onto the wafer 3 by irradiation with irradiation light 6.
【００１０】親水化処理は、アルコール系等の親水溶液
で密着面１１を奇麗に拭き、レンズ表面の汚れを取るこ
とで行なわれる。そして、この親水化処理後密着面１１
にウエハ３を浸液５を介して密着させ、ウエハ３を露光
レンズ２にばね９により所定圧にて押しつける。The hydrophilic treatment is carried out by wiping the contact surface 11 cleanly with a hydrophilic solution such as alcohol to remove dirt from the lens surface. After this hydrophilic treatment, the contact surface 11
The wafer 3 is brought into close contact with the wafer 3 through the immersion liquid 5, and the wafer 3 is pressed against the exposure lens 2 with a predetermined pressure by a spring 9.
【００１１】かくしてこのような構成においては、親水
化処理によって密着面１１の吸水性を向上させているの
で、親水化処理を施さなかったときと比較して浸液５の
吸水効果が大きく、したがって、浸液５の表面張力が小
さくなって濡れ性が上がるため、浸液５の膜厚ｄ２ を
図２に示した従来装置と比較して薄くする（ｄ２ ＜ｄ
１）ことができ、また膜厚が薄くなれば光の吸収量も少
なくなるので、これに比例して光の吸収ムラが減少し、
露光ムラを軽減防止することができる。[0011] Thus, in such a configuration, since the water absorbency of the adhesion surface 11 is improved by the hydrophilic treatment, the water absorbing effect of the immersion liquid 5 is greater than when no hydrophilic treatment is performed. , the surface tension of the immersion liquid 5 is reduced and the wettability is increased, so the film thickness d2 of the immersion liquid 5 is made thinner than that of the conventional device shown in FIG. 2 (d2 < d
1) In addition, as the film thickness becomes thinner, the amount of light absorbed also decreases, so the unevenness of light absorption decreases in proportion to this.
Exposure unevenness can be reduced or prevented.
【００１２】0012
【発明の効果】以上説明したように本発明に係る密着型
露光装置によれば、投影光学系またはフォトマスクのウ
エハ密着面を親水化処理し、この親水化処理された密着
面に、フォトレジストを塗布されたウエハを浸液を介し
て密着させるように構成したので、浸液自身の表面張力
を減らして濡れ性を向上させることができる。したがっ
て、浸液の膜厚を薄くするができ、また膜厚が薄くなれ
ば浸液の膜厚ムラも少なくなるため、光の吸収が少なく
、浸液による露光ムラを軽減防止することができる。As explained above, according to the contact type exposure apparatus according to the present invention, the projection optical system or the wafer contact surface of the photomask is hydrophilized, and the photoresist is applied to the hydrophilized contact surface. Since the wafer coated with the wafer is brought into close contact with the wafer through the immersion liquid, the surface tension of the immersion liquid itself can be reduced and wettability can be improved. Therefore, the film thickness of the immersion liquid can be made thinner, and the thinner the film thickness, the less uneven the film thickness of the immersion liquid, so that less light is absorbed and the unevenness of exposure due to the immersion liquid can be reduced and prevented.
【図１】本発明に係る密着型露光装置の一実施例を示す
要部の断面図である。FIG. 1 is a sectional view of essential parts of an embodiment of a contact exposure apparatus according to the present invention.
【図２】密着型露光装置の従来例を示す要部の断面図で
ある。FIG. 2 is a cross-sectional view of main parts of a conventional example of a contact exposure apparatus.
１ フォトマスク ２ 露光レンズ ３ ウエハ ４ フォトレジスト ５ 浸液 ６ 照射光 ７ マスク １１ 密着面 1 Photomask 2 Exposure lens 3 Wafer 4 Photoresist 5 Immersion liquid 6 Irradiation light 7 Mask 11 Adhesion surface
Claims (1)
エハ密着面を親水化処理し、この親水化処理された密着
面にフォトレジストを塗布されたウエハを浸液を介して
密着させ、照射光の照射によりフォトマスクのパターン
を前記フォトレジストに転写するようにしたことを特徴
とする密着型露光装置。Claim 1: The wafer contact surface of the projection optical system or photomask is made hydrophilic, and the wafer coated with a photoresist is brought into close contact with the hydrophilic treated contact surface via an immersion liquid, and irradiation light is irradiated. A contact type exposure apparatus characterized in that a pattern of a photomask is transferred to the photoresist by using the above-mentioned method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3094863A JPH04305917A (en) | 1991-04-02 | 1991-04-02 | Adhesion type exposure device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3094863A JPH04305917A (en) | 1991-04-02 | 1991-04-02 | Adhesion type exposure device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04305917A true JPH04305917A (en) | 1992-10-28 |
Family
ID=14121877
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3094863A Pending JPH04305917A (en) | 1991-04-02 | 1991-04-02 | Adhesion type exposure device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04305917A (en) |
Cited By (247)
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|---|---|---|---|---|
| JP2004207711A (en) * | 2002-12-10 | 2004-07-22 | Nikon Corp | Exposure device, exposure method, and device manufacturing method |
| EP1571698A1 (en) * | 2002-12-10 | 2005-09-07 | Nikon Corporation | Exposure apparatus, exposure method and method for manufacturing device |
| US6952253B2 (en) | 2002-11-12 | 2005-10-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US6954256B2 (en) | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
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