DD221563A1 - IMMERSIONS OBJECTIVE FOR THE STEP-BY-STEP PROJECTION IMAGING OF A MASK STRUCTURE - Google Patents
IMMERSIONS OBJECTIVE FOR THE STEP-BY-STEP PROJECTION IMAGING OF A MASK STRUCTURE Download PDFInfo
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- DD221563A1 DD221563A1 DD25480683A DD25480683A DD221563A1 DD 221563 A1 DD221563 A1 DD 221563A1 DD 25480683 A DD25480683 A DD 25480683A DD 25480683 A DD25480683 A DD 25480683A DD 221563 A1 DD221563 A1 DD 221563A1
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- German Democratic Republic
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- immersion
- lens
- immersion objective
- substrate
- immersion liquid
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
Abstract
Die Erfindung betrifft ein Immersionsobjektiv fuer die schrittweise Projektionsabbildung einer Maskenstruktur auf Halbleiterscheiben fuer fotolithografische Verfahren zur Herstellung integrierter Halbleiterschaltungen. Das Ziel der Erfindung besteht darin, die mittels Immersionsobjektiv herkoemmlicher Bauart entstehenden Gasblaseneinschluesse, Schlierenbildungen sowie Benetzung des Scheibentisches, -randes und der -rueckseite mit Immersionsfluessigkeit zu vermeiden. Die erfindungsgemaesse Aufgabe wird durch eine Vorsatzeinrichtung am Objektiv geloest, mit deren Hilfe eine mengen- und druckdosierte Fluessigkeitszufuehrung waehrend des Belichtungsprozesses sowie deren nachfolgende Absaugung sowohl innerhalb der Vorsatzeinrichtung als auch auf und von der Halbleiterscheibe erfolgt. Verschiedenartige Ausfuehrungen der Vorrichtung ermoeglichen unterschiedliche Belichtungsvarianten. Die Erfindung ist auf dem Gebiet der Fotolithografie einsetzbar.The invention relates to an immersion objective for the stepwise projection imaging of a mask structure on semiconductor wafers for photolithographic processes for the production of semiconductor integrated circuits. The object of the invention is to avoid gas bubble inclusions, streaking and wetting of the disk table, edge and back side with immersion liquid, which are produced by means of an immersion objective of conventional design. The object according to the invention is achieved by means of an attachment device on the objective, with the aid of which a quantity and pressure-metered supply of liquid during the exposure process as well as its subsequent suction takes place both within the attachment device and onto and from the semiconductor wafer. Various embodiments of the device allow different exposure variants. The invention can be used in the field of photolithography.
Description
Immersionsobjektiv für die schrittweise Projektionsabbildung einer MaskenstrukturImmersion objective for the stepwise projection imaging of a mask structure
Anwendungsgebiet der ErfindungField of application of the invention
Die Erfindung betrifft ein Immersionsobjektiv für die schrittweise Projekt ionsabbildung einer Maskenstruktur auf Halbleiterscheiben für fotolithografische Verfahren zur Herstellung integrierter Halbleiterschaltungen.The invention relates to an immersion objective for the stepwise projection imaging of a mask structure on semiconductor wafers for photolithographic processes for the production of semiconductor integrated circuits.
Die Erfindung ist auf dem Gebiet der Halbleitertechnik anwendbar.The invention is applicable in the field of semiconductor technology.
Charakteristik der bekannten technischen LösungenCharacteristic of the known technical solutions
Zur Übertragung von Maskenstrukturen auf Halbleitersubstrate für die Herstellung von integrierten und höchstintegrierten Halbleiterschaltungen werden in zunehmendem Maße optische Projektionsverfahren und —einrichtungen eingesetzt.Optical projection methods and devices are increasingly being used to transfer mask patterns to semiconductor substrates for the fabrication of integrated and highly integrated semiconductor circuits.
Mittels derartiger Vorrichtungen wird das Bild bzw. die Struktur einer Maske mit Hilfe eines optischen Projektionssystems auf das Halbleitersubstrat übertragen, das höchste Anforderungen an das Auflösungsvermögen der Optik, die Bildfeldgröße, die Konstanz des Abbildungsmaßstabes, der eingesetzten Strahlenquelle sowie andere Abbildungsparameter stellt. Diese Anforderungen sind mit refraktiven Optiken nur bei monochromatischer Abbildung zu erfüllen.By means of such devices, the image or the structure of a mask with the aid of a projection optical system is transmitted to the semiconductor substrate, the highest demands on the resolution of the optics, the image field size, the constancy of the magnification, the radiation source used as well as other imaging parameters. These requirements can only be met with refractive optics with monochromatic imaging.
Aufgrund des großen Unterschiedes zwischen der Dicke der eingesetzten Fotoresistschicht und der Kohärenzlänge des verwendeten monochromatischen Lichtes treten in der Fotoresistschicht Interferenzerscheinungen auf, die sich störend auf den Justier- und Abbildungsprozeß auswirken. Dieser Kachteil tritt auch bei der schrittweisen. Belichtung mit einem reduzierten Abbildungsmaßstab (1 : χ ) auf, wobei auf einem Halbleitersubstrat bis zur Strukturierung der Gesamtfläche mehrmals justiert und belichtet werden muß.Due to the large difference between the thickness of the photoresist layer used and the coherence length of the monochromatic light used, interference phenomena occur in the photoresist layer, which have a disruptive effect on the adjustment and imaging process. This Kachteil also occurs in the gradual. Exposure with a reduced magnification (1: χ ) on which has to be adjusted and exposed several times on a semiconductor substrate to the structuring of the total area.
Zur weiteren Strukturverkleinerung, zur Verschiebung der oberen Grenze der numerischen Apertur des Objektivs und der auflösbaren Grenzortsfrequenz sowie der Senkung der Strukturbreitenschwankungen infolge von Interferenzerscheinungen in der ßesistschicht in Verbindung mit Schichtdickenschwankungen des Resists, zum Beispiel an Stufen eines bereits bearbeiteten Halbleitersubstrates, ist aus der EP -\PS 23 231 bekannt, die Belichtung des Halbleitersubstrates in einer Flüssigkeit durchzuführen, deren Brechungsindex dem des Lacküberzuges des Halbleitersubstrates entspricht.For further structural reduction, for shifting the upper limit of the numerical aperture of the objective and the resolvable borderline frequency as well as for reducing the structural width fluctuations due to interference phenomena in the resist layer in connection with layer thickness fluctuations of the resist, for example at steps of a semiconductor substrate already processed, PS 23 231 known to perform the exposure of the semiconductor substrate in a liquid whose refractive index corresponds to that of the paint coating of the semiconductor substrate.
Zur Durchführung dieses Projektionsverfahrens wird zwischen dem Projektionsobjektiv und dem Halbleitersubstrat eine Flüssigkeit so eingebracht, daß sich die Objektivöffnung sowie die Substrataufnahme mit dem Halbleitersubstrat vollständig in der Flüssigkeit befinden, die durch entsprechende Einrichtungen einem das Objektiv und die Substrataufnahme einschließenden Behälter zu— und von diesem abgeführt wird. Diesem Verfahren haftet der Nachteil an, daß zur Durchführung des Justier- und Belichtungsprozesses erforderliche Substrattischbewegungen nur langsam durchgeführt werden können, da hohe Beschleunigungsund Verzögerungswerte ein auslaufen der Flüssigkeit bewirken würden und hohe Strukturauflösung nur bei beruhigten Medium zu erzielen sind. Weiterhin erfordertTo carry out this projection method, a liquid is introduced between the projection objective and the semiconductor substrate such that the objective opening and the substrate receptacle with the semiconductor substrate are located completely in the liquid, which is supplied by corresponding devices to a container enclosing the objective and the substrate receptacle and removed therefrom becomes. This method has the disadvantage that substrate motions necessary for carrying out the adjustment and exposure process can be carried out only slowly, since high acceleration and deceleration values would cause the liquid to run out and high structural resolution can be achieved only with calmed medium. Furthermore required
die vollständige fflüssigkeitsbenetzung einen hohen Aufwand bei der Subatratzu- und -abführung sowie der Reinigung der Substratrückseite. Bei der Beschickung des Flüssigkeitsbehälters mit einem Halbleitersubstrat an diesem anhaftende Luft- oder Gasbläschen, sowie bei der Belichtung von Positivlack entstehende Stickstoffbläschen wirken sich nachteilig auf den Belichtungsprozeß aus, da diese zu Fehlbelichtungen führen.the complete fflüssigkeitsbenetzung a lot of effort in the Subatratzu- and -abführung and the cleaning of the substrate back. When feeding the liquid container with a semiconductor substrate to this adhering air or gas bubbles, as well as in the exposure of positive paint resulting nitrogen bubbles have a detrimental effect on the exposure process, as they lead to incorrect exposures.
In der DD-Anmeldung gemäß H 01 L / 240 786/8 ist ein Immersionsobjektiv beschrieben, wobei nur der Raum zwischen der partiell zu belichtenden Substratfläche und der unteren Objektivlinse mit Immersionsflüssigkeit ausgefüllt ist. Dieser Raum wird durch eine sich auf Bildfeldgröße verjüngende Hülse gebildet, die einerseits mit dem Objektiv verbunden und andererseits bis auf einen geringen Abstand zu dem zu belichtenden Halbleitersubstrat abgesenkt werden kann. Die Zuführung der Immersionsflüssigkeit erfolgt über eine externe Drucksteuerung und verbleibt nach den Belichtungsschritten vollständig auf dem Substrat und muß anschließend separat entfernt werden. Des weiteren erfordert ein unkontrollierbares Auslaufen der Flüssigkeit Nacharbeit und Reinigungsaufwand des belichteten Halbleitersubstrates und der Substrataufnahme und Verlust von Immersionsflüssigkeit· Ebenso können eingeschlossene Luft- oder Gasbläschen beim Substratwechsel und beim Anfahren der Substrataufnahme je nach Abstand zwischen der Hülse und dem Substrat zu Defekten führen und somit abbildungsstörend wirken.In the DD application according to H 01 L / 240 786/8 an immersion objective is described, wherein only the space between the substrate surface to be partially exposed and the lower objective lens is filled with immersion liquid. This space is formed by a sleeve which tapers to an image field size, which sleeve can be connected to the objective on the one hand and lowered on the other hand to a small distance from the semiconductor substrate to be exposed. The feeding of the immersion liquid via an external pressure control and remains after the exposure steps completely on the substrate and must then be removed separately. Furthermore, an uncontrollable leakage of the liquid requires reworking and cleaning of the exposed semiconductor substrate and the substrate uptake and loss of immersion liquid · Likewise enclosed air or gas bubbles can lead to defects during substrate change and when starting the substrate recording depending on the distance between the sleeve and the substrate and thus disturb the image.
- 4 Ziel der Erfindung- 4 Object of the invention
Das Ziel der Erfindung besteht darin, die bei der schrittweisen, partiellen Strukturabbildung mit Hilfe eines Immersionsobjektives störenden Gasblaseneinschlüsse sowie die Schlierenbildung in der Immersionsflüssigkeit zu vermeiden und die Benetzung des Scheibenrandes, des Scheibentisches und der Scheibenrückseite mit Immersionsflüssigkeit auszuschließen.The object of the invention is to avoid the gas bubbles inclusions interfering with the stepwise, partial pattern imaging with the aid of an immersion objective, as well as the streaking in the immersion liquid, and to exclude the wetting of the wafer edge, the wafer table and the wafer backside with immersion liquid.
Aufgabe der ErfindungObject of the invention
Der Erfindung liegt die Aufgabe zugrunde, ein Immersionsobjektiv für die schrittweise Projektionsabbildung einer Maskenstruktur zu schaffen, das es ermöglicht, Maskenstrukturen hoher Strukturauflösung auf Halbleiterscheiben zu erzeugen, wobei hohe Substrattischbewegungen ohne Schlierenbildung und störende Gasblaseneinschlüsse innerhalb der Immersionsflüssigkeit erreicht, die Scheibenränder und -rückseiten, sowie der Scheibentisch durch Immersionsflüssigkeit nicht benetzt werden und hohe Anfangs- und Endbeschleunigungswerte der Scheibentischbewegung keine Auswirkungen auf die Qualität und Produktivität der Anlage zur Projektionsabbildung bewirken.The invention has for its object to provide an immersion objective for the stepwise projection imaging of a mask structure, which makes it possible to produce high resolution pattern structures on semiconductor wafers, wherein high substrate table movements without streaking and interfering Gasblaseneinschlüsse achieved within the immersion liquid, the disc edges and backs, and the disc table will not be wetted by immersion fluid and high initial and final acceleration values of the disc table movement will not affect the quality and productivity of the projection imaging equipment.
Merkmale der ErfindungFeatures of the invention
Das erfindungsgemäße Immersionsobjektiv weist an seiner dem Halbleitersubstrat zugewandten Seite zwei Immersionssysteme .auf, wobei ein erstes Immersionssystem dadurch gebildet ist, daß die am Objektiv angeordnete Vorsat ζeinrichtung an ihrer dem Substrat zugewandten und verjüngten Öffnung mittels einer lichtdurchlässigen Scheibe mediendicht verschlossen ist, wobei der Raum zwischen dem letzten optischen Bauteil des ObjektivsThe immersion objective according to the invention has two immersion systems on its side facing the semiconductor substrate. A first immersion system is formed in that the attachment arranged on the objective is closed in a media-tight manner on its substrate-facing and tapered opening by means of a translucent disk, the space between the last optical component of the lens
und der lichtdurchlässigen Scheibe mit einer Immersionsflüssigkeit vollständig gefüllt ist. Weiterhin ist ein zweites Immersionssystem dadurch vorgesehen, daß eine zweite Immersionsflüssigkeit zwischen der lichtdurchlässigen Scheibe und dem Halbleitersubstrat durch einen an der Vorsatzeinrichtung parallel zur Oberfläche des Halbleitersubstrates angeordneten Ring vorgesehen ist. Der Ring weist dazu in der horizontalen Substrattischbewegung gesehen, wenigstens eine Öffnung vor und wenigstens eine Öffnung nach der Vorsatzeinrichtung des Objektivs auf, die über Schlauch- oder Rohrleitungen mit darin installierten Sperreinrichtungen sowie Filter- und Thermostatiereinrichtungen mit Zuführ- und Druckausgleichseinrichtungen verbunden sind, wobei die Schlauch- oder Rohrleitung an der vor der Vorsatzeinrichtung mit der Schlauch- oder Rohrleitung an der nach der Vorsatz einrichtung vorgesehenen Öffnung ein geschlossenes System bilden, in dem die genannten Einrichtungen integriert sind. An der Vorsatzeinrichtung selbst sind einerseits Zuleitungen für Immersionsflüssigkeit vorgesehen, die Einrichtungen zur Druckreduzierung, Sperreinrichtungen, Behälter als Speicher- und Druckausgleichseinrichtung sowie Thermostatiereinrichtungen aufweisen, die andererseits mit Ableitungen verbunden sind, womit ein geschlossenes System vorliegt.and the translucent disk is completely filled with an immersion liquid. Furthermore, a second immersion system is provided in that a second immersion liquid is provided between the transparent disk and the semiconductor substrate by a ring arranged parallel to the surface of the semiconductor substrate on the front-end device. The ring has seen in the horizontal substrate table movement, at least one opening in front and at least one opening after the attachment means of the lens, which are connected via hose or pipes with locking devices installed therein and filter and thermostatic devices with supply and pressure compensation devices, said Hose or pipe at the front of the attachment means with the hose or pipe on the provided after the intent device opening form a closed system in which the said devices are integrated. Supply lines for immersion liquid, on the one hand, are provided on the front-end device itself and have pressure-reducing devices, blocking devices, reservoirs and pressure equalization devices as well as thermostating devices which, on the other hand, are connected to discharges, thus providing a closed system.
In den Zuleitungen für das erste Immersionssyst em sind unmittelbar vor deren Austrittsöffnung Einrichtungen zur Druckreduzierung und Flüssigkeitsverteilung vorgesehen.In the supply lines for the first Immersionssyst em facilities for pressure reduction and liquid distribution are provided immediately before the outlet opening.
Des weiteren ist die Vorsatzeinrichtung am Objektiv höhenverstellbar ausgebildet und ist gegen einen oberen und einen unteren Anschlag lagebegrenzt.Furthermore, the attachment device is designed to be height-adjustable on the lens and is position-limited against an upper and a lower stop.
Zur Immersionsbelichtung weist die Vorsatzeinrichtung an ihrer der Halbleiterscheibe zugewandten und verjüngten Öffnung als lichtdurchlässige Scheibe eine planparallele Glasplatte oder eine plankonvexe Linse niedriger Brechkraft auf.For immersion exposure, the presetting device has a plane-parallel glass plate or a plano-convex lens of low refractive power at its opening facing the semiconductor wafer and tapered as a transparent disk.
In einer Ausgestaltung der Lösung besteht die lichtdurchlässige Scheibe aus einer Folie mit einer dem auf der Halbleiterscheibe aufgebrachten Fotoresist angepaßten Brechzahl.In one embodiment of the solution, the translucent disk consists of a film with a refractive index adapted to the photoresist applied to the semiconductor wafer.
Die Folie kann in einer Dicke von 0,5 bis 100 /um ausgeführt sein und ist an der dem Objektiv zugewandten Seite für die zur Strukturübertragung, Uberdeckungspositionierung und / oder Fokussierung benutzten Wellenlängen des eingesetzten Lichtes entspiegelt und des v/eiteren der Brechzahl der auf der Halbleiterscheibe angeordneten Immersionsflüssigkeit angepaßt.The film can be made in a thickness of 0.5 to 100 / μm and is antireflected on the side facing the lens for the wavelengths of the light used for the structure transfer, covering positioning and / or focusing and of the v / eiteren of the refractive index on the Semiconductor wafer arranged immersion liquid adapted.
Es ist vorteilhaft, wenn die Folie aus Nitrozellulose, Polychinoxalin oder Polycarbonat besteht und daß der Abstand zwischen der planparallelen Glasplatte, der plankonvexen Linse oder der Folie und der Oberfläche des auf der Halbleiterscheibe befindlichen Fotoresist in einem Bereich von 5 ,um bis 5 mm beträgt.It is advantageous if the film consists of nitrocellulose, polyquinoxaline or polycarbonate and that the distance between the plane-parallel glass plate, the plano-convex lens or the film and the surface of the photoresist on the semiconductor wafer in a range of 5, by up to 5 mm.
In einer v/eiteren Ausgestaltung der Erfindung ist in der Öffnung der Zuleitung in dem an der Vorsatzeinrichtungsunterseite angeordneten Ring eine Führung vorgesehen, in der vertikal beweglich eine Hülse angeordnet ist, deren resistseitige Öffnung kleiner als die darüber angeordnete Zuleitung, beispielsweise wie eine Düse, ausgebildet und daß oberhalb des Ringes ein als Abstandsmeßeinrichtung ausgebildeter Sensor angeordnet ist, der mit außerhalb des Immersionsobjektives vorhandenen Mitteln zur Meßwert erfassung und -auswertung in Wirkverbindung steht. Es ist vorteilhaft, wenn Hülsen für dieIn a further embodiment of the invention, a guide is provided in the opening of the feed line in the ring arranged vertically on the front side of the device in which a resist-side opening is smaller than the feed line arranged above it, for example like a nozzle and that above the ring as a trained Abstandsmeßeinrichtung sensor is arranged, which is connected to outside of the immersion objective existing means for measured value detection and evaluation in operative connection. It is advantageous if sleeves for the
Abstandsmessung zur Fokussierung an mehreren Stellen des Ringes angeordnet sind, beispielsweise an drei oder mehr in gleichem Abstand zueinander vorgesehenen Führungen, angeordnet sind. Bs ist v/eiterhin vorteilhaft, wenn das erste und das zweite Immersionssystem die gleiche Immersionsflüssigkeit auf v/eisen. Eine weitere bevorzugte Ausgestaltung der Erfindung besteht darin, wenn die Oberfläche des auf dem Halbleitersubstrat aufgebrachten Fotoresists mit einem Medium geringer Oberflächenspannung, beispielsweise einem netzmittel, vorbehandelt ist. Die Immersionsflüssigkeit des ersten und des zweiten Immersionssystems ist während des Belichtungsvorganges thermostatiert und weist vorzugsweise eine Temperatur von 22 £ 10C auf.Distance measurement for focusing are arranged at several points of the ring, for example, at three or more equally spaced guides provided, are arranged. Bs is advantageous if the first and second immersion systems have the same immersion fluid. A further preferred embodiment of the invention is when the surface of the photoresist applied to the semiconductor substrate is pretreated with a medium of low surface tension, for example a wetting agent. The immersion liquid of the first and the second immersion system is thermostated during the exposure process and preferably has a temperature of 22 1 1 0 C.
Die Lichtquelle für die Strukturübertragung weist eine ultraviolette Strahlung auf, deren Wellenlänge im Spektralbereich von 200 bis 450 nm liegt. Vor der Einleitung eines Belichtungsprozesses eines auf der Substrataufnahme üblicherweise befestigten und mit Fotoresist beschichteten Halbleitersubstrates wird dessen Oberfläche mit einem Medium geringer Oberflächenspannung, beispielsweise mit einem Netzmittel, versehen und das Halbleitersubstrat wird mit der Substrataufnahme mittels der entsprechenden Einrichtungen in den Bestrahlbereich unter die 'Vorsatzeinrichtung des Objektivs gebracht. Zum Zweck des Belichtungsprozesses ist die Vorsatzeinrichtung zwischen der an der dem Halbleitersubstrat zugewandten, verjüngten öffnung angeordneten optisch neutralen Schicht, die beispielsweise aus einer planparallelen Glasplatte besteht, und dem objektivseitig letzten optischen Bauelement des Objektivs mit einer Immersionsflüssigkeit vollständig ausgefüllt, wobei die Immersionsflüssigkeit ständig zu— und abgeführt sowie auf einer konstanten Temperatur gehalten wird.The light source for the structure transmission has an ultraviolet radiation whose wavelength is in the spectral range of 200 to 450 nm. Before the initiation of an exposure process of a substrate substrate usually mounted on the substrate and coated with photoresist semiconductor substrate whose surface is provided with a medium of low surface tension, for example, with a wetting agent, and the semiconductor substrate is with the substrate recording by means of the corresponding devices in the irradiation area under the 'attachment of the Lens brought. For the purpose of the exposure process, the pre-etching device is completely filled with an immersion liquid between the optically neutral layer which is arranged on the semiconductor substrate facing the tapered opening and consists for example of a plane-parallel glass plate and the objective optical device of the objective with an immersion liquid. and discharged and kept at a constant temperature.
Zur- Vermeidung von Schlierenbildungen innerhalb der Immersionsflüssigkeit im Bestrahlbereich sind an den Zuführöffnungen Mittel zur homogenen Verteilung derselben vorgesehen. Die Abführung der Flüssigkeit erfolgt über geeignete Filter und wird über entsprechende Rohr- oder Schlauchleitungen sowie Thermostatiereinrichtungen einer Druckausgleichs- und Speichereinrichtung zugeführt, die ausgangsseitig wiederum mit der Vorsatzeinrichtung in Verbindung steht und somit ein erstes Immersionssyst em gebildet ist. Das zweite Immersionssystem wird dadurch gebildet, daß unmittelbar vor der Einleitung des Strukturierungs· Prozesses Immersionsflüssigkeit durch die an dem Ring angeordneten Zuführungsöffnung, in Substrattischbewegung gesehen, vor der Vorsatzeinrichtung, mit Hilfe der entsprechenden Regel- und Steuereinrichtungen auf die Halbleiterscheibe bzw. dessen mit Fotoresist und mit dem Netzmittel versehene Oberfläche gegeben und anschließend die Vorsatz-' einrichtung so weit abgesenkt wird, daß der sich zwischen dem Ring und der lichtdurchlässigen Scheibe an der Unterseite der Vorsatzeinrichtung gebildete Immersionsflüssigkeitsfilm während der Substrattischbewegung konstant bleibt und nicht abreißt. Die Zuführung der Immersionsflüssigkeit erfolgt dabei mengenmäßig so, daß vor der Zuführöfl'nung ein Flüssigkeit sv/all entsteht. Der Belichtungsprozeß eriolgt, wenn aie Flüssigkeit den Spalt zwischen der Vorsahzeinrichtung und der Halbleiterscheibe voll ausgefüllt hat, schrittweise so, daß die Immersionsflüssigkeit, in Substrat t is chbev/egungsrichtung hinter der Vorsatzeinrichtung, durch die entsprechenden Abführeinrichtungen im Ring abgesaugt und dem zweitenIn order to avoid streaking within the immersion liquid in the irradiation area, means for the homogeneous distribution of the same are provided at the feed openings. The discharge of the liquid via suitable filters and is supplied via appropriate pipe or hose lines and thermostatic devices of a pressure compensation and storage device, which in turn is on the output side in connection with the attachment means and thus a first Immersionssyst em is formed. The second immersion system is formed by immediately prior to the initiation of structuring process immersion liquid through the supply opening arranged on the ring, in substrate table movement, before the Vorsatzzeinrichtung, with the aid of the corresponding control and control devices on the semiconductor wafer or with its photoresist and provided with the wetting agent surface and then the intent 'device is lowered so far that the immersion liquid film formed between the ring and the translucent disc on the underside of the attachment device remains constant during the substrate table movement and does not break off. The feeding of the immersion liquid takes place quantitatively so that before the Zuführöfl'nung a liquid sv / all arises. The exposure process, when the liquid has completely filled the gap between the feeder and the semiconductor wafer, is stepped so that the immersion liquid, in the substrate, is behind the feeder, sucked through the corresponding discharge means in the ring and the second
System wieder zugeführt wird. Bei der am Substrat— ende erfolgenden Richtungsänderung des Belichtungsvorganges werden die Punktionen der vorhandenen Zu- und Abführeinrichtungen für die Immersionsflüssigkeit entsprechend umgesteuert, so daß die zweite Belichtungsspur bei der Rückführung des Substrattisches analog der Vorwärtsbewegung realisiert wird. Die genannten Operationen werden bis zur vollständigen Struktur!erung des Halbleitersubstrates wiederholt. Am Ende des Belichtungsvorganges kann bei entsprechender Steuerung der Zu- und Abführeinrichtungen die unter der Vorsatzeinrichtung befindliche Immersionsflüssigkeit abgesaugt werden und die Vorsatzeinrichtung wird für den Substratwechsel in die entsprechende Position angehoben» Der Einsatz der vertikal in der Führung innerhalb des Ringes angeordneten Hülse ermöglicht in Verbindung mit den zugeordneten Mitteln Sensor, Meßwerterfassungs- und -auswerteeinrichtung die präzise Belichtungsabstandsmessung, Fokussierung und Ebenenzuordnung während des Strukturierungsprozesses.System is fed back. When the direction change of the exposure process takes place at the substrate end, the punctures of the existing supply and discharge devices for the immersion liquid are correspondingly reversed, so that the second exposure track is realized in the return of the substrate table analogously to the forward movement. The operations mentioned are repeated until complete structure of the semiconductor substrate. At the end of the exposure process, with appropriate control of the supply and discharge devices, the immersion liquid located under the attachment device can be sucked off and the attachment device is raised to the appropriate position for the substrate change. The use of the sleeve arranged vertically in the guide within the ring allows in conjunction with FIG the associated means sensor, Meßwerterfassungs- and -auswerteinrichtung the precise exposure distance measurement, focusing and level assignment during the structuring process.
Ausführungsbeispielembodiment
Die Erfindung wird anhand eines Ausführungsbeispieles und Zeichnungen näher erläutert. In den Zeichnungen zeigen:The invention will be explained in more detail with reference to an embodiment and drawings. In the drawings show:
Pig. 1 : die 3.chematische Darstellung eines Immersionsobjektives gemäß der Srfindung,Pig. 1: the third chemical representation of an immersion objective according to the invention,
Pig. 2 i das Blockschaltbild eines Belichtungsvorganges, Pig. 3 i eine Variante des erfindungsgemäßenPig. 2 i is the block diagram of an exposure process, Pig. 3 i a variant of the invention
Immersionsobjektivs, schematisch t Pig. 4 : die Einrichtung zur Höhenmessung.Immersion lens, schematically t Pig. 4: the device for altitude measurement.
Gemäß der Pig. 1 weist das Immersionsobjektiv am Objektiv 1 eine Vorsatzeinrichtung 7 auf, die an ihrer, der Substrataufnahme 16 zugewandten Seite bis auf den Belichtungsdurchmesser verjüngt ist. Die verjüngte Öffnung ist durch eine lichtdurchlässige Scheibe 3 mediendicht mittels einer Passung 3.1 verschlossen. An der objektivseitigen Öffnung der Vorsatzeinrichtung 7 ist ein Ring 6 vorgesehen, womit die Vorsatzeinrichtung 7 gegen einen oberen Anschlag 6.1 sowie einen unteren Anschlag 6.2 lagebegrenzbar ist. Der kegelförmige Teil der Vorsat ζeinrichtung 7 ist doppelwandig ausgeführt, wobei die innere Wandung 7.2 an bestimmten Stellen Öffnungen aufweist. In der Außenwand 7.1 sind ebenfalls an vorbestimmten Punkten Öffnungen angeordnet, in denen Zuleitungen 17 bzw. Ableitungen 18 eingebunden sind. Vor den Öffnungen der Zu- bzw. Ableitungen 17J 18 sind zwischen der Innenwand 7.2 und der Außenwand 7.1 Prallbleche 19 vorgesehen.According to the Pig. 1, the immersion objective on the objective 1 has a presetting device 7, which is tapered at its side facing the substrate receptacle 16 up to the exposure diameter. The tapered opening is closed by a transparent disc 3 media-tight by means of a fit 3.1. At the lens-side opening of the attachment device 7, a ring 6 is provided, with which the attachment means 7 is positionally limited against an upper stop 6.1 and a lower stop 6.2. The conical part of the Vorsat ζeinrichtung 7 is double-walled, wherein the inner wall 7.2 at certain points has openings. In the outer wall 7.1 openings are also arranged at predetermined points, in which supply lines 17 and 18 derivatives are involved. Before the openings of the supply and discharge lines 17J 18 baffles 19 are provided between the inner wall 7.2 and the outer wall 7.1.
Die an der zeichnungsgemäß rechten Außenwand 7.1 der Vorsatzeinrichtung 7 vorgesehene Zuleitung 17 ist in ihrer weiteren Ausführung mit einer Sperreinrichtung 15 sowie mit einer Druckausgleichs- und Speichereinrichtung 14 verbunden, an der ein Anschluß 14.1 vorgesehen ist. Die an der zeichnungsgemäß linken Außenwand 7.1 angeordnete Ableitung 18 weist eine Pilter- und Thermostatiereinrichtung 8 auf, deren Ausgang 8.1 mit dem Anschluß 14.1 verbunden ist. Der zwischen dem objektivseitig letzten optischen Bauteil 2 und der optisch neutralen, durchscheinenden Scheibe 3 vorhandene Hohlraum 4 ist vollständig mit einer Immersionsflüssigkeit 4.1 angefüllt, die über die Zu- und Ableitungen 1-7J 18 sowie den Ausgang 8.1 und den Anschluß 14.1 ausgebreitet ist und somit ein geschlossenes erstes Immersionssystem bildet.The supply line 17 provided on the right outer wall 7.1 of the attachment device 7 is connected in its further embodiment to a blocking device 15 and to a pressure compensation and storage device 14, to which a connection 14.1 is provided. The arranged on the left outer wall according to the left 7.1 drain 18 has a Pilter- and thermostating device 8, the output is 8.1 connected to the terminal 14.1. The existing between the lens side last optical component 2 and the optically neutral, translucent disc 3 cavity 4 is completely filled with an immersion liquid 4.1, which is spread over the supply and discharge lines 1-7J 18 and the output 8.1 and the terminal 14.1 and thus forms a closed first immersion system.
Zum Aufbau eines zweiten Immersionssystems ist an der Unterseite der Vorsatzeinrichtung 7 ein Ring 9 vorgesehen, in dem wenigstens je eine öffnung 10 und vorgesehen ist, die in Substratbewegungsrichtung gesehen, vor bzw. nach der Vorsatzeinrichtung angeordnet sind. Die mehrfache Anordnung der öffnungen 10; 11 kann beispielsweise so ausgeführt sein, daß sie auf einem gemeinsamen Teilkreis angeordnet, um die untere öffnung der Vorsatzeinrichtung 7 abstandswei— se bis jeweils mittig vorgesehen sind. Die Öffnung bzw. Öffnungen 10 in dem Ring 9 sind über entsprechende Anschluß— und Verbindungselemente mit Schlauchoder Rohrleitungen 12 verbunden, die in Weiterführung mit einer Druckausgleichs- oder / und Speichereinrichtung 14 verbunden sind. Die Leitungsführung ist dabei.so gestaltet, daß die Schlauch- oder Rohrleitung 12 vor der Druckausgleichs- oder / und Speichereinrichtung geteilt ist,.wobei strömungstechnisch eine Verzweigung 12.1 für eine zweite Immersionsflüssigkeit 4.1 die Strömungsrichtung durch eine offene Sperreinrichtung 15, sowie eine in der anderen Verzweigung in Sperrichtung angeordnete Sperreinrichtung 15.1 die Flußrichtung vorgegeben ist. Each der Sperreinrichtung 15 ist eine Filter- und Thermostatiereinrichtung 8 vorgesehen und nach der Druckausgleichs- und / oder Speichereinrichtung 14 ist in deren ausgangsseitigem Anschluß die Rohroder Schlauchleitung 12 weitergeführt und vor der Verzweigung ist die Sperreinrichtung 15.1, jetzt auf Durchgang für aus dieser Richtung strömende Immersionsflüssigkeit 4.1 angeordnet, vorgesehen. Wenn mehrere als Zuleitungen geschaltete Schlauchoder Rohrleitungen 12 vorgesehen sind, sind diese vor der Verzweigung 12.1 vereinigt, so daß eine Zuführung von Immersionsflüssigkeit über alle vorgesehenen Öffnungen 10 erfolgt.To construct a second immersion system, a ring 9 is provided on the underside of the attachment device 7, in which at least one respective opening 10 and is provided, which, viewed in the direction of substrate movement, are arranged before or after the attachment device. The multiple arrangement of the openings 10; 11, for example, be designed so that they are arranged on a common pitch circle, the distance to the lower opening of the attachment means 7 are provided sese to each center. The opening or openings 10 in the ring 9 are connected via corresponding connecting and connecting elements with hose or pipes 12, which are connected in continuation with a pressure equalization and / or storage device 14. The line guide is doing.so designed that the hose or pipe 12 is divided before the pressure equalization and / or storage device, .wobei fluidically a branch 12.1 for a second immersion liquid 4.1, the flow direction through an open locking device 15, and one in the other Branching in the blocking direction arranged blocking device 15.1 the direction of flow is predetermined. Each of the locking device 15 is a filter and thermostatic device 8 is provided and after the pressure equalization and / or storage device 14, the Rohroder hose 12 is continued in the output-side connection and before the branch is the locking device 15.1, now on passage for flowing from this direction immersion liquid 4.1 arranged, provided. If a plurality of tubes or conduits 12 connected as feed lines are provided, these are combined in front of the branch 12.1 so that an introduction of immersion liquid takes place via all openings 10 provided.
Die Öffnung oder die Öffnungen 11 sind in Verbindung mit der Schlauch- oder Rohrleitung 13 in der in Fig. dargestellten Variante als Absaugung vorgesehen, wobei die abgesaugte Immersionsflüssigkeit 4.1 durch entsprechende Einrichtungen gefördert und den Einrichtungen .zur Aufbereitung und Zuführung auf das beschichtete Halbleitersubstrat 16 vor der Vorsatzeinrichtung 7 zugeführt wird.The opening or the openings 11 are provided in connection with the hose or pipe 13 in the variant shown in FIG. As suction, wherein the aspirated immersion liquid 4.1 promoted by appropriate means and the facilities .zur preparation and supply to the coated semiconductor substrate 16 before the pre-appliance 7 is supplied.
Die Öffnungen '1Oj 11 sind in Abhängigkeit von der Bewegungsrichtung des .Halbleitersubstrates 25 v/ahlweise als Zuführungen für die Immersionsflüssigkeit 4.1 jeweils vor der Vor sat ζ einrichtung 7, bzw. als Absaugung jeweils nach der Vorsatzeinrichtung 7 während der Bewegung des Halbleitersubstrates 25 einsetzbar.The openings' 1Oj 11 are depending on the direction of movement of .Halbleitersubstrates 25 v / Ahlweise as feeds for the immersion liquid 4.1 respectively before the sat ζ device 7, or as suction respectively after the attachment means 7 during the movement of the semiconductor substrate 25 used.
Die gemäß der Pig. 1 verwendete Immersionsflüssig-. keit 4.1 ist sowohl innerhalb der Vorsatzeinrichtung 7 als auch zwischen der Vorsatzeinrichtung 7 und der Oberfläche des beschichteten Fotoresists 26; 27 thermostatiert, wobei vorzugsweise eine Temperatur von 22 £ 1° G konstant gehalten ist. In der Fig. 4 ist eine Einrichtung zur Differenzmessung des Abstandes 9 zwischen der Oberfläche des Fotoresists 26 und der lichtdurchlässigen Scheibe 3 bzw. der Unterkante des Ringes 9, die einem vorgegebenen Belichtungsabstand entspricht, dargestellt. Dazu .weist eine in dem Ring vorgesehene Öffnung 10 eine Führung 20 auf, in der eine Hülse 21 mit einer als eine Düse 24 ausgebildeten unteren Öffnung beweglich angeordnet ist. Die Hülse 21 ist oberhalb des Ringes 9 mit einem Sensor 22 gekoppelt, der mit Mitteln zur Meßwerterfassung und —auswertung 23 verbunden ist. Die Oberseite der Hülse 2.1 ist mit einer Zuleitung 17 für die Zuführung von Immersionsflüssigkeit 4.2 verbunden.The according to the Pig. 1 immersion liquid used. 4.1 is both within the Vorsatzzeinrichtung 7 and between the Vorsatzzeinrichtung 7 and the surface of the coated photoresist 26; 27 thermostated, wherein preferably a temperature of 22 Â £ 1 ° G is kept constant. FIG. 4 shows a device for measuring the difference in distance 9 between the surface of the photoresist 26 and the translucent disk 3 or the lower edge of the ring 9, which corresponds to a predetermined exposure distance. For this purpose, an opening 10 provided in the ring has a guide 20 in which a sleeve 21 with a lower opening formed as a nozzle 24 is movably arranged. The sleeve 21 is coupled above the ring 9 with a sensor 22 which is connected to means for measuring value acquisition and evaluation 23. The top of the sleeve 2.1 is connected to a feed line 17 for the supply of immersion liquid 4.2.
Bei der Zuführung der Immersionsflüssigkeit 4.1 konstanter Strömungsgeschwindigkeit durch die mit der Düse 24 verschiebbare Hülse 21 bewirkt die Verkleinerung des Spaltes a durch Anheben des Scheibentisches eine Erhöhung dea Strömungswiderstandes und somit eine Vergrößerung des Kraftrektors normal zur Oberfläche des Fotoresists 26 bzw. dem Ring 9, womit eine Verschiebung der Hülse 21 erfolgt, diese von dem Sensor 22 registriert und die Information an einen elektromechanischen Koppler innerhalb der Mittel zur Meßwerterfassung und -auswertung 23 zugeführt und eine Verschiebung des Scheibentisches bewirkt wird. Vorteilhaft ist die als Meßsonde ausgebildete Hülse 21 an mehreren Öffnungen 10; 11 vorgesehen, wobei die Anordnung vorzugsweise dreieckförmig innerhalb des Ringes 9 vorgesehen und somit eine Flächenzuordnung realisiert werden kann.When feeding the immersion liquid 4.1 constant flow rate through the sleeve 21 displaceable with the nozzle 21 causes the reduction of the gap a by raising the disc table an increase dea flow resistance and thus an increase of the force rectifier normal to the surface of the photoresist 26 and the ring 9, thus a displacement of the sleeve 21 is carried out, this registered by the sensor 22 and the information supplied to an electromechanical coupler within the means for Meßwerterfassung and -auswertung 23 and a displacement of the disc table is effected. Advantageously, the trained as a probe sleeve 21 at a plurality of openings 10; 11 is provided, wherein the arrangement preferably provided in a triangular shape within the ring 9 and thus an area allocation can be realized.
Die in der Fig. 3 dargestellte Ausgestaltung des' Immersionsobjektives weist ebenfalls eine Vorsatzeinrichtung 7 auf, die einwandig ausgeführt ist, und die zwischen dem objektivseitig letzten optischen Bauteil 2 und der verjüngten, unteren Öffnung einen Raum 4 bildet.The embodiment of the immersion objective shown in FIG. 3 also has an attachment device 7, which is of single-walled construction, and which forms a space 4 between the last optical component 2 on the lens side and the tapered, lower opening.
An ihrer der mit dem Fotoresist 26 beschichteten Halbleitersubstrat 25 zugewandten unteren Öffnung ist eine lichtdurchlässige Scheibe 3 in einer Fassung 3.1 vorgesehen, die dem Durchmesser des Bildfeldes entspricht, die objektivseitige öffnung weist ebenfalls einen Ring 6 sowie einen unteren und oberen Anschlag 6.1; 6.2 auf. Der an der verjüngten Seite in einer Ebene mit der lichtdurchlässigen Scheibe befindliche Ring 9.1 ist mit Bohrungen / Öffnungen 10; 11 versehen, die jeweils auf zwei voneinander unterschiedlichen Teilkreisen um die optische Achse A angeordnet sind.A translucent disk 3 in a socket 3.1, which corresponds to the diameter of the image field, is provided on its lower opening facing the semiconductor substrate 25 coated with the photoresist 26. The lens-side opening likewise has a ring 6 and a lower and upper stop 6.1; 6.2. The located on the tapered side in a plane with the translucent disk ring 9.1 is with holes / openings 10; 11, which are each arranged on two mutually different pitch circles about the optical axis A.
Die Öffnungen 10 sind abstandsweise zwei- oder mehrfach auf dem inneren Teilkreis vorgesehen und sind über Zuleitungen 17 sowie Sperreinrichtungen 28 zentral mit einer Druckausgleichs- und Speichereinrichtung verbunden. Auf dem äußeren Teilkreis sind wenigstens zwei oder mehrere Öffnungen 11 abstandsweise vorgesehen, die Ableitungen 18 mit Sperreinrichtungen 29 aufweisen, die in ihrer v/eiteren Anordnung untereinander verbunden und über eine Rohr- oder Schlauchleitung 13 einer Filter- und Thermostatiereinrichtung 8 zugeführt sind, die ausgangseitig wiederum mit dem Eingang der Druckausgleichs- oder Speichereinrichtung 14 verbunden ist. Bei / Vor der Inbetriebnahme der erfindungsgemäßen Vorsatzeinrichtung ist die Immersionsflüssigkeit 4.1 in den entsprechenden Speichereinrichtungen und der Spalt a für den Belichtungsabstand ist durch Absenken der Vorsatzeinrichtung 7 oder Anheben des Scheibentisches eingestellt. In Verbindung mit der dem ersten Belichtungsschritt zugeordneten Relativbewegung des Substrattisches 16 erfolgt über die Zuführungen 17 der Zufluß der Immersionsflüssigkeit 4.1 über die Öffnungen 10 auf die Oberfläche des mit dem Resist 26 beschichteten Halbleitersubstrates 25 derart, daß der Spalt a mit einem homogenen Flüssigkeitsfilm ausgefüllt wird und bezogen auf die Relativbewegung des Substrattisches 16 vor dem Ring 9.1 ein schmaler Flüssigkeitswall 4.2 entsteht. Nach dem Flüssigkeitsauftrag über die Zuführungen 17 sowie nach einem durchgeführten Belichtungsschritt wird mittels einer entsprechenden Steuerung der Sperreinrichtungen 28; 29; 30 sowie der Druckausgleichsund Speichereinrichtung 14 die Immersionsflüssigkeit 4.1 durch die Öffnungen 11 mit den angeschlossenen Ableitungen 18 abgeführt und den nachgeschalteten Vorrichtungen zur Reinigung, Temperierung und Speicherung 8; 14 zugeleitet.The openings 10 are spaced two or more times provided on the inner pitch circle and are connected via leads 17 and locking devices 28 centrally connected to a pressure compensation and storage device. On the outer pitch circle at least two or more openings 11 are provided in spaced fashion, the derivatives 18 having locking means 29 which are interconnected in their v / eiteren arrangement and fed via a pipe or hose 13 a filter and thermostating device 8, the output side in turn connected to the input of the pressure equalization or storage device 14. When / before putting into operation of the pretensioner according to the invention the immersion liquid is 4.1 in the corresponding memory devices and the gap a for the exposure distance is set by lowering the attachment means 7 or lifting the disc table. In conjunction with the relative movement of the substrate table 16 associated with the first exposure step, the inflow of the immersion liquid 4.1 via the openings 10 onto the surface of the semiconductor substrate 25 coated with the resist 26 takes place via the feeds 17 such that the gap a is filled with a homogeneous liquid film and Based on the relative movement of the substrate table 16 before the ring 9.1, a narrow liquid wall 4.2 is formed. After the liquid application via the feeders 17 and after an exposure step is carried out by means of a corresponding control of the locking devices 28; 29; 30 and the pressure equalization and storage device 14, the immersion liquid 4.1 discharged through the openings 11 with the connected leads 18 and the downstream devices for cleaning, temperature control and storage 8; 14 forwarded.
In der Fig. 2 ist das Blockschaltbild eines Belichtungs Vorganges dargestellt.2, the block diagram of an exposure process is shown.
Die Halbleitersubstratbelichtung erfolgt gemäß eines vorgegebenen Ablaufprogrammes derart, daß ein Halbleitersubstrat mit einem Hetzmittel vorbehandelt in die Belichtungseinrichtung gegeben und auf dem Substrattisch nach einem Vorjustierprozeß befestigt wird.The semiconductor substrate exposure is carried out in accordance with a predetermined sequence program such that a semiconductor substrate pretreated with a curing agent is added to the exposure device and fixed on the substrate table after a Vorjustierprozeß.
Es besteht auch die Möglichkeit, das Netzmittel nach dem Vorjustier— oder Spannprozeß unmittelbar in der Belichtungseinrichtung aufzutragen.It is also possible to apply the wetting agent immediately after the pre-adjustment or tensioning process in the exposure device.
Anschließend daran erfolgt der Transport des Substrattisches mit dem Halbleitersubstrat unter das mit der Vorsatzeinrichtung ausgestattete Objektiv und die Vorsatzeinrichtung wird bis auf den Be licht ungs abstand abgesenkt. Durch die Zufuhr thermostatierter Immersionsflüssigkeit durch die entsprechenden Öffnungen bei kreisförmiger Bewegung des Substrattisches erfolgt die Ausbildung eines stabilen Immersionsflüssigkeitsfilmes zwischen Fotoresist bzw. dem netzmittel und der Unterkante der lichtdurchlässigen Scheibe bzw. dem Ring an der Vorsatz einrichtung.Subsequently, the transport of the substrate table with the semiconductor substrate under the lens equipped with the attachment means and the attachment means is lowered to the Be light ungs distance. By the supply of thermostatically controlled immersion liquid through the respective openings in a circular movement of the substrate table, the formation of a stable immersion liquid film between the photoresist or the wetting agent and the lower edge of the translucent disk or the ring on the attachment device is carried out.
Im folgenden Schritt wird die erste Belichtungsposition angefahren, während weitere Immersionsflüssigkeit zugeführt wird, das Halbleitersubstrat wird positioniert und der erste Belichtungsschritt erfolgt. Die weitere Belichtungsfolge v/ird analog der Brstbelichtung bis zur vollständigen Halbleitersubstratbelichtung durchgeführt und die Zufuhr von Immersionsflüssigkeit gesperrt.In the following step, the first exposure position is approached while further immersion liquid is supplied, the semiconductor substrate is positioned and the first exposure step takes place. The further exposure sequence is carried out analogously to the bristle exposure until complete exposure of the semiconductor substrate and the supply of immersion liquid is blocked.
Im anschließenden Schritt wird die auf dem Halbleiter-, substrat befindliche Immersionsflüssigkeit durch kreisförmige Bewegung des Substrattisches abgesaugt, und die Vorsatzeinrichtung angehoben, so daß abschliessend der Substratwechsel erfolgen und die V/eiterbearbeitung von Folgesubstraten durchgeführt werden kann.In the subsequent step, the immersion liquid present on the semiconductor substrate is sucked off by circular movement of the substrate table, and the pre-attachment device is raised, so that finally the substrate changes take place and the subsequent processing of following substrates can be carried out.
Die Vorteile des erfindungsgemäßen Immersionsobjektivs ergeben sich insbesondere dadurch, daß durch den konstanten Durchfluß von Immersionsflüssigkeit sowohl zwischen der Vorsatzeinrichtung und dem Fotoresist auf dem Halbleitersubstrat als auch zwischen dem objektivseitig letzten optischen Bauelement und der f lichtdurchlässigen Scheibe keine Staubpartikel-, Luft- oder Gasblaseneinschlüsse den Belichtungsprozeß negativ beeinflussen. Die Anordnung der Immersionsschicht gemäß der erfinderischen lösung erlaubt es weiterhin, hohe Relativbewegungen des Substrattisches auszuführen, ohne daß das Halbleitersubstrat außerhalb des Belichtungsfeldes verunreinigt wird, desgleichen ist eine Rückseitenverschmutzung ausgeschlossen, die bei den bekannten Lösungen zu einer hohen Nacharbeit führt. Des weiteren ist die Benetzung der Substrataufnahme und des unmittelbaren Substrattischbereiches weitestgehend ausgeschlossen. Die Behandlung der Resistoberfläche mit einem Netzmittel ermöglicht dabei eine annähernd restlose Beseitigung von Immersionsflüssigkeit, womit der für folgende Bearbeitungsschritte erforderliche Reinigungsaufwand stark reduziert werden kann.The advantages of the immersion objective according to the invention result in particular from the fact that due to the constant flow of immersion liquid both between the front lens and the photoresist on the semiconductor substrate and between the lens side last optical component and the f translucent disc no Staubpartikel-, air or Gasblaseneinschlüsse the exposure process influence negatively. The arrangement of the immersion layer according to the inventive solution further allows to carry out high relative movements of the substrate table, without the semiconductor substrate is contaminated outside the exposure field, as well as a backside contamination is excluded, which leads to a high rework in the known solutions. Furthermore, the wetting of the substrate receptacle and the immediate substrate table area is largely excluded. The treatment of the resist surface with a wetting agent thereby enables an almost complete elimination of immersion liquid, whereby the cleaning effort required for the following processing steps can be greatly reduced.
Claims (15)
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DD25480683A DD221563A1 (en) | 1983-09-14 | 1983-09-14 | IMMERSIONS OBJECTIVE FOR THE STEP-BY-STEP PROJECTION IMAGING OF A MASK STRUCTURE |
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DD25480683A DD221563A1 (en) | 1983-09-14 | 1983-09-14 | IMMERSIONS OBJECTIVE FOR THE STEP-BY-STEP PROJECTION IMAGING OF A MASK STRUCTURE |
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US7411650B2 (en) | 2003-06-19 | 2008-08-12 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
US7414794B2 (en) | 2003-04-17 | 2008-08-19 | Nikon Corporation | Optical arrangement of autofocus elements for use with immersion lithography |
US7433019B2 (en) | 2003-07-09 | 2008-10-07 | Nikon Corporation | Exposure apparatus and device manufacturing method |
US7436486B2 (en) | 2002-12-10 | 2008-10-14 | Nikon Corporation | Exposure apparatus and device manufacturing method |
US7450217B2 (en) | 2005-01-12 | 2008-11-11 | Asml Netherlands B.V. | Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby |
US7456929B2 (en) | 2004-10-15 | 2008-11-25 | Nikon Corporation | Exposure apparatus and device manufacturing method |
US7460206B2 (en) | 2003-12-19 | 2008-12-02 | Carl Zeiss Smt Ag | Projection objective for immersion lithography |
US7466392B2 (en) | 2002-12-10 | 2008-12-16 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US7471371B2 (en) | 2003-03-25 | 2008-12-30 | Nikon Corporation | Exposure apparatus and device fabrication method |
US7480029B2 (en) | 2003-04-07 | 2009-01-20 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
US7483117B2 (en) | 2003-05-28 | 2009-01-27 | Nikon Corporation | Exposure method, exposure apparatus, and method for producing device |
US7514699B2 (en) * | 2002-12-19 | 2009-04-07 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
US7522259B2 (en) | 2003-04-11 | 2009-04-21 | Nikon Corporation | Cleanup method for optics in immersion lithography |
US7532306B2 (en) * | 2003-05-30 | 2009-05-12 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus |
US7551362B2 (en) | 2002-08-23 | 2009-06-23 | Nikon Corporation | Projection optical system and method for photolithography and exposure apparatus and method using same |
US7557900B2 (en) | 2004-02-10 | 2009-07-07 | Nikon Corporation | Exposure apparatus, device manufacturing method, maintenance method, and exposure method |
US7589818B2 (en) | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
US7697111B2 (en) | 2003-08-26 | 2010-04-13 | Nikon Corporation | Optical element and exposure apparatus |
US7701551B2 (en) * | 2006-04-14 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7705968B2 (en) | 2005-03-18 | 2010-04-27 | Nikon Corporation | Plate member, substrate holding device, exposure apparatus and method, and device manufacturing method |
US7773195B2 (en) | 2005-11-29 | 2010-08-10 | Asml Holding N.V. | System and method to increase surface tension and contact angle in immersion lithography |
US7804575B2 (en) | 2004-08-13 | 2010-09-28 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method having liquid evaporation control |
US7803516B2 (en) | 2005-11-21 | 2010-09-28 | Nikon Corporation | Exposure method, device manufacturing method using the same, exposure apparatus, and substrate processing method and apparatus |
US7804574B2 (en) | 2003-05-30 | 2010-09-28 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method using acidic liquid |
US7804576B2 (en) | 2004-12-06 | 2010-09-28 | Nikon Corporation | Maintenance method, maintenance device, exposure apparatus, and device manufacturing method |
US7812926B2 (en) | 2005-08-31 | 2010-10-12 | Nikon Corporation | Optical element, exposure apparatus based on the use of the same, exposure method, and method for producing microdevice |
US7812924B2 (en) | 2004-12-02 | 2010-10-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7839485B2 (en) | 2006-01-19 | 2010-11-23 | Nikon Corporation | Movable body drive method, movable body drive system, pattern formation method, pattern forming apparatus, exposure method, exposure apparatus, and device manufacturing method |
US7839483B2 (en) | 2005-12-28 | 2010-11-23 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a control system |
EP2256535A1 (en) * | 2004-02-16 | 2010-12-01 | Olympus Corporation | Immersion objective lens, retention mechanism for immersion medium, and manufacturing method thereof |
US7852457B2 (en) | 2004-11-12 | 2010-12-14 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7852456B2 (en) | 2004-10-13 | 2010-12-14 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US7859644B2 (en) | 2005-03-28 | 2010-12-28 | Asml Netherlands B.V. | Lithographic apparatus, immersion projection apparatus and device manufacturing method |
US7864292B2 (en) | 2005-11-16 | 2011-01-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE10343876B4 (en) * | 2003-09-23 | 2011-01-13 | Vistec Semiconductor Systems Gmbh | Device for measuring feature widths on masks for the semiconductor industry |
US7872730B2 (en) | 2006-09-15 | 2011-01-18 | Nikon Corporation | Immersion exposure apparatus and immersion exposure method, and device manufacturing method |
US7876418B2 (en) | 2002-12-10 | 2011-01-25 | Nikon Corporation | Optical element and projection exposure apparatus based on use of the optical element |
US7898642B2 (en) | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7898643B2 (en) | 2003-06-27 | 2011-03-01 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
WO2011029467A1 (en) | 2009-09-08 | 2011-03-17 | Carl Zeiss Smt Gmbh | Optical element with low surface figure deformation |
US7914687B2 (en) | 2005-02-22 | 2011-03-29 | Asml Netherlands B.V. | Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method |
US7924416B2 (en) | 2005-06-22 | 2011-04-12 | Nikon Corporation | Measurement apparatus, exposure apparatus, and device manufacturing method |
US7929112B2 (en) | 2005-06-28 | 2011-04-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7928407B2 (en) | 2005-11-23 | 2011-04-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2264533A3 (en) * | 2003-07-28 | 2011-04-20 | Nikon Corporation | Exposure apparatus, method for producing device, and exposure method |
US7932996B2 (en) | 2003-10-28 | 2011-04-26 | Nikon Corporation | Exposure apparatus, exposure method, and device fabrication method |
US7932999B2 (en) | 2002-11-12 | 2011-04-26 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7948604B2 (en) | 2002-12-10 | 2011-05-24 | Nikon Corporation | Exposure apparatus and method for producing device |
US7961293B2 (en) | 2003-10-15 | 2011-06-14 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7973910B2 (en) | 2006-11-17 | 2011-07-05 | Nikon Corporation | Stage apparatus and exposure apparatus |
US7978306B2 (en) | 2004-11-17 | 2011-07-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8004654B2 (en) | 2005-10-06 | 2011-08-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8003968B2 (en) | 2005-12-27 | 2011-08-23 | Asml Netherlands B.V. | Lithographic apparatus and substrate edge seal |
US8013982B2 (en) | 2006-08-31 | 2011-09-06 | Nikon Corporation | Movable body drive method and system, pattern formation method and apparatus, exposure method and apparatus for driving movable body based on measurement value of encoder and information on flatness of scale, and device manufacturing method |
US8013975B2 (en) | 2006-12-01 | 2011-09-06 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US8013978B2 (en) | 2004-12-28 | 2011-09-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8018573B2 (en) | 2005-02-22 | 2011-09-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8023100B2 (en) | 2004-02-20 | 2011-09-20 | Nikon Corporation | Exposure apparatus, supply method and recovery method, exposure method, and device producing method |
US8027026B2 (en) | 2004-10-05 | 2011-09-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8027021B2 (en) | 2006-02-21 | 2011-09-27 | Nikon Corporation | Measuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure apparatus and method, and device manufacturing method |
US8035800B2 (en) | 2006-03-13 | 2011-10-11 | Nikon Corporation | Exposure apparatus, maintenance method, exposure method, and method for producing device |
US8035797B2 (en) | 2003-09-26 | 2011-10-11 | Nikon Corporation | Projection exposure apparatus, cleaning and maintenance methods of a projection exposure apparatus, and device manufacturing method |
US8035799B2 (en) | 2004-12-09 | 2011-10-11 | Nikon Corporation | Exposure apparatus, exposure method, and device producing method |
US8040490B2 (en) | 2006-12-01 | 2011-10-18 | Nikon Corporation | Liquid immersion exposure apparatus, exposure method, and method for producing device |
USRE42849E1 (en) | 2004-02-09 | 2011-10-18 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8040489B2 (en) | 2004-10-26 | 2011-10-18 | Nikon Corporation | Substrate processing method, exposure apparatus, and method for producing device by immersing substrate in second liquid before immersion exposure through first liquid |
US8045134B2 (en) | 2006-03-13 | 2011-10-25 | Asml Netherlands B.V. | Lithographic apparatus, control system and device manufacturing method |
US8045135B2 (en) | 2006-11-22 | 2011-10-25 | Asml Netherlands B.V. | Lithographic apparatus with a fluid combining unit and related device manufacturing method |
US8054465B2 (en) | 2004-11-18 | 2011-11-08 | Nikon Corporation | Position measurement method |
US8054445B2 (en) | 2005-08-16 | 2011-11-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8054472B2 (en) | 2006-02-21 | 2011-11-08 | Nikon Corporation | Pattern forming apparatus, mark detecting apparatus, exposure apparatus, pattern forming method, exposure method, and device manufacturing method |
US8064039B2 (en) | 2005-04-25 | 2011-11-22 | Nikon Corporation | Exposure method, exposure apparatus, and device manufacturing method |
US8068210B2 (en) | 2004-09-28 | 2011-11-29 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and computer program product |
US8070145B2 (en) | 2005-08-26 | 2011-12-06 | Nikon Corporation | Holding unit, assembly system, sputtering unit, and processing method and processing unit |
US8077291B2 (en) | 2004-12-10 | 2011-12-13 | Asml Netherlands B.V. | Substrate placement in immersion lithography |
US8089608B2 (en) | 2005-04-18 | 2012-01-03 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
US8102507B2 (en) | 2004-12-30 | 2012-01-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8102512B2 (en) | 2004-09-17 | 2012-01-24 | Nikon Corporation | Substrate holding device, exposure apparatus, and device manufacturing method |
US8102502B2 (en) | 2003-10-28 | 2012-01-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8107053B2 (en) | 2005-02-28 | 2012-01-31 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid |
WO2012013748A1 (en) | 2010-07-30 | 2012-02-02 | Carl Zeiss Smt Gmbh | Euv exposure apparatus |
US8111374B2 (en) | 2005-09-09 | 2012-02-07 | Nikon Corporation | Analysis method, exposure method, and device manufacturing method |
US8115903B2 (en) | 2005-05-03 | 2012-02-14 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8115905B2 (en) | 2004-12-08 | 2012-02-14 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8120749B2 (en) | 2005-06-28 | 2012-02-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8125610B2 (en) | 2005-12-02 | 2012-02-28 | ASML Metherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
US8134681B2 (en) | 2006-02-17 | 2012-03-13 | Nikon Corporation | Adjustment method, substrate processing method, substrate processing apparatus, exposure apparatus, inspection apparatus, measurement and/or inspection system, processing apparatus, computer system, program and information recording medium |
US8149381B2 (en) | 2003-08-26 | 2012-04-03 | Nikon Corporation | Optical element and exposure apparatus |
US8164736B2 (en) | 2007-05-29 | 2012-04-24 | Nikon Corporation | Exposure method, exposure apparatus, and method for producing device |
US8164734B2 (en) | 2004-06-16 | 2012-04-24 | Asml Netherlands B.V. | Vacuum system for immersion photolithography |
US8169591B2 (en) | 2004-08-03 | 2012-05-01 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US8174674B2 (en) | 2003-10-15 | 2012-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8179517B2 (en) | 2005-06-30 | 2012-05-15 | Nikon Corporation | Exposure apparatus and method, maintenance method for exposure apparatus, and device manufacturing method |
US8203693B2 (en) | 2005-04-19 | 2012-06-19 | Asml Netherlands B.V. | Liquid immersion lithography system comprising a tilted showerhead relative to a substrate |
US8208123B2 (en) | 2003-08-29 | 2012-06-26 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8208124B2 (en) | 2003-08-29 | 2012-06-26 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8208119B2 (en) | 2004-02-04 | 2012-06-26 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
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US8233137B2 (en) | 2004-12-20 | 2012-07-31 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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US8237915B2 (en) | 2002-12-10 | 2012-08-07 | Carl Zeiss Smt Gmbh | Method for improving an optical imaging property of a projection objective of a microlithographic projection exposure apparatus |
US8248577B2 (en) | 2005-05-03 | 2012-08-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8253921B2 (en) | 2003-09-03 | 2012-08-28 | Nikon Corporation | Exposure apparatus and device fabricating method |
US8259287B2 (en) | 2005-04-05 | 2012-09-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8294873B2 (en) | 2004-11-11 | 2012-10-23 | Nikon Corporation | Exposure method, device manufacturing method, and substrate |
US8325326B2 (en) | 2004-06-07 | 2012-12-04 | Nikon Corporation | Stage unit, exposure apparatus, and exposure method |
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US8330934B2 (en) | 2004-01-26 | 2012-12-11 | Nikon Corporation | Exposure apparatus and device manufacturing method |
US8344341B2 (en) | 2002-11-12 | 2013-01-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8368870B2 (en) | 2004-06-21 | 2013-02-05 | Nikon Corporation | Exposure apparatus and device manufacturing method |
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US8390778B2 (en) | 2005-03-09 | 2013-03-05 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method, seal structure, method of removing an object and a method of sealing |
US8400615B2 (en) | 2003-09-29 | 2013-03-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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US8421996B2 (en) | 2005-11-16 | 2013-04-16 | Asml Netherlands B.V. | Lithographic apparatus |
US8427629B2 (en) | 2004-09-24 | 2013-04-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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US8472006B2 (en) | 2003-11-24 | 2013-06-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8472002B2 (en) | 2002-11-12 | 2013-06-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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US8488099B2 (en) | 2004-04-19 | 2013-07-16 | Nikon Corporation | Exposure apparatus and device manufacturing method |
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US8514369B2 (en) | 2005-03-04 | 2013-08-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20130271945A1 (en) | 2004-02-06 | 2013-10-17 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
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EP2284614A3 (en) * | 2003-10-09 | 2013-10-30 | Nikon Corporation | Exposure apparatus, exposure method and device producing method |
US8634053B2 (en) | 2006-12-07 | 2014-01-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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US8675174B2 (en) | 2004-09-17 | 2014-03-18 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
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US8705008B2 (en) | 2004-06-09 | 2014-04-22 | Nikon Corporation | Substrate holding unit, exposure apparatus having same, exposure method, method for producing device, and liquid repellant plate |
US8705009B2 (en) | 2009-09-28 | 2014-04-22 | Asml Netherlands B.V. | Heat pipe, lithographic apparatus and device manufacturing method |
US8711323B2 (en) | 2003-07-16 | 2014-04-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8711333B2 (en) | 2003-07-24 | 2014-04-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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US8928856B2 (en) | 2003-10-31 | 2015-01-06 | Nikon Corporation | Exposure apparatus and device fabrication method |
WO2015028202A1 (en) * | 2013-08-30 | 2015-03-05 | Asml Netherlands B.V. | Immersion lithographic apparatus |
US20150138520A1 (en) * | 2003-11-24 | 2015-05-21 | Asml Netherlands B. V. | Holding Device for an Optical Element in an Objective |
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US9099501B2 (en) | 2005-06-28 | 2015-08-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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JP2015232734A (en) * | 2004-06-09 | 2015-12-24 | 株式会社ニコン | Exposure device and device manufacturing method |
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EP2960702A1 (en) * | 2003-09-03 | 2015-12-30 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
JP2016001314A (en) * | 2003-09-29 | 2016-01-07 | 株式会社ニコン | Exposure device, measurement method, exposure method, and device manufacturing method |
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EP3104396A1 (en) * | 2003-06-13 | 2016-12-14 | Nikon Corporation | Exposure method, substrate stage, exposure apparatus, and device manufacturing method |
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US9623436B2 (en) | 2004-05-18 | 2017-04-18 | Asml Netherlands B.V. | Active drying station and method to remove immersion liquid using gas flow supply with gas outlet between two gas inlets |
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US9632425B2 (en) | 2006-12-07 | 2017-04-25 | Asml Holding N.V. | Lithographic apparatus, a dryer and a method of removing liquid from a surface |
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US9678437B2 (en) | 2003-04-09 | 2017-06-13 | Nikon Corporation | Illumination optical apparatus having distribution changing member to change light amount and polarization member to set polarization in circumference direction |
US9703210B2 (en) | 2004-12-20 | 2017-07-11 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP3190605A1 (en) * | 2004-06-21 | 2017-07-12 | Nikon Corporation | Exposure apparatus, exposure method and device manufacturing method |
US9746788B2 (en) | 2004-08-19 | 2017-08-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9746781B2 (en) | 2005-01-31 | 2017-08-29 | Nikon Corporation | Exposure apparatus and method for producing device |
US9760014B2 (en) | 2003-10-28 | 2017-09-12 | Nikon Corporation | Illumination optical apparatus and projection exposure apparatus |
US9798245B2 (en) | 2003-12-15 | 2017-10-24 | Nikon Corporation | Exposure apparatus, and exposure method, with recovery device to recover liquid leaked from between substrate and member |
US9798246B2 (en) | 2003-05-13 | 2017-10-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9810996B2 (en) | 2006-05-09 | 2017-11-07 | Carl Zeiss Smt Gmbh | Optical imaging device with thermal attenuation |
US9846372B2 (en) | 2010-04-22 | 2017-12-19 | Asml Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method |
US9874822B2 (en) | 2006-09-01 | 2018-01-23 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method |
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US9952515B2 (en) | 2003-11-14 | 2018-04-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9958792B2 (en) | 2006-08-31 | 2018-05-01 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method |
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-
1983
- 1983-09-14 DD DD25480683A patent/DD221563A1/en not_active IP Right Cessation
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EP3223053A1 (en) * | 2003-09-03 | 2017-09-27 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
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JP2017116968A (en) * | 2003-09-03 | 2017-06-29 | 株式会社ニコン | Immersion lithography device and immersion lithography method |
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DE10343876B4 (en) * | 2003-09-23 | 2011-01-13 | Vistec Semiconductor Systems Gmbh | Device for measuring feature widths on masks for the semiconductor industry |
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US20150138520A1 (en) * | 2003-11-24 | 2015-05-21 | Asml Netherlands B. V. | Holding Device for an Optical Element in an Objective |
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JP2019015984A (en) * | 2003-12-15 | 2019-01-31 | 株式会社ニコン | Stage device, exposure device and exposure method |
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DE102004033208A1 (en) * | 2004-07-09 | 2006-02-02 | Leica Microsystems Semiconductor Gmbh | Device for inspecting a microscopic component with an immersion objective |
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US9746788B2 (en) | 2004-08-19 | 2017-08-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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US10331047B2 (en) | 2004-08-19 | 2019-06-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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US9341959B2 (en) | 2004-09-17 | 2016-05-17 | Nikon Corporation | Substrate holding device, exposure apparatus, and device manufacturing method |
US8427629B2 (en) | 2004-09-24 | 2013-04-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8068210B2 (en) | 2004-09-28 | 2011-11-29 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and computer program product |
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US8027026B2 (en) | 2004-10-05 | 2011-09-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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US8004652B2 (en) | 2004-10-18 | 2011-08-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9753380B2 (en) | 2004-10-18 | 2017-09-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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US8934082B2 (en) | 2004-10-18 | 2015-01-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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US8817231B2 (en) | 2004-11-12 | 2014-08-26 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method involving a liquid confinement structure |
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US9581916B2 (en) | 2004-11-17 | 2017-02-28 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7978306B2 (en) | 2004-11-17 | 2011-07-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9188882B2 (en) | 2004-11-17 | 2015-11-17 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9298108B2 (en) | 2004-11-18 | 2016-03-29 | Nikon Corporation | Position measurement method, position control method, measurement method, loading method, exposure method and exposure apparatus, and device manufacturing method |
US8059260B2 (en) * | 2004-11-18 | 2011-11-15 | Nikon Corporation | Position measurement method, position control method, measurement method, loading method, exposure method and exposure apparatus, and device manufacturing method |
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EP1843384A4 (en) * | 2004-12-02 | 2010-04-28 | Nikon Corp | Exposure device and device manufacturing method |
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EP1843384A1 (en) * | 2004-12-02 | 2007-10-10 | Nikon Corporation | Exposure device and device manufacturing method |
WO2006059636A1 (en) | 2004-12-02 | 2006-06-08 | Nikon Corporation | Exposure device and device manufacturing method |
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US8115905B2 (en) | 2004-12-08 | 2012-02-14 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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US8913224B2 (en) | 2004-12-09 | 2014-12-16 | Nixon Corporation | Exposure apparatus, exposure method, and device producing method |
US9740106B2 (en) | 2004-12-10 | 2017-08-22 | Asml Netherlands B.V. | Substrate placement in immersion lithography |
US8077291B2 (en) | 2004-12-10 | 2011-12-13 | Asml Netherlands B.V. | Substrate placement in immersion lithography |
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US8102507B2 (en) | 2004-12-30 | 2012-01-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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US7450217B2 (en) | 2005-01-12 | 2008-11-11 | Asml Netherlands B.V. | Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby |
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US9164391B2 (en) | 2005-02-10 | 2015-10-20 | Asml Netherlands B.V. | Immersion liquid, exposure apparatus, and exposure process |
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US7859644B2 (en) | 2005-03-28 | 2010-12-28 | Asml Netherlands B.V. | Lithographic apparatus, immersion projection apparatus and device manufacturing method |
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US8212991B2 (en) | 2005-05-23 | 2012-07-03 | Carl Zeiss Smt Gmbh | Optical system of a microlithographic projection exposure apparatus |
DE102005024163A1 (en) * | 2005-05-23 | 2006-11-30 | Carl Zeiss Smt Ag | Optical system e.g. projection objective, for microlithography projection exposure system, has module insertable and removable as unit into system, and concave curved optical surface for capping cavity during operation of exposure system |
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