DD221563A1 - Immersions objective for the step-by-step projection imaging of a mask structure - Google Patents

Immersions objective for the step-by-step projection imaging of a mask structure Download PDF

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Publication number
DD221563A1
DD221563A1 DD25480683A DD25480683A DD221563A1 DD 221563 A1 DD221563 A1 DD 221563A1 DD 25480683 A DD25480683 A DD 25480683A DD 25480683 A DD25480683 A DD 25480683A DD 221563 A1 DD221563 A1 DD 221563A1
Authority
DD
German Democratic Republic
Prior art keywords
immersion
characterized
immersion objective
lens
substrate
Prior art date
Application number
DD25480683A
Other languages
German (de)
Inventor
Rainer Pforr
Peter Westphal
Rolf Stenzel
Original Assignee
Mikroelektronik Zt Forsch Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mikroelektronik Zt Forsch Tech filed Critical Mikroelektronik Zt Forsch Tech
Priority to DD25480683A priority Critical patent/DD221563A1/en
Publication of DD221563A1 publication Critical patent/DD221563A1/en

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece
    • G03F7/70341Immersion

Abstract

The invention relates to an immersion objective for the stepwise projection imaging of a mask structure on semiconductor wafers for photolithographic processes for the production of semiconductor integrated circuits. The object of the invention is to avoid gas bubble inclusions, streaking and wetting of the disk table, edge and back side with immersion liquid, which are produced by means of an immersion objective of conventional design. The object according to the invention is achieved by means of an attachment device on the objective, with the aid of which a quantity and pressure-metered supply of liquid during the exposure process as well as its subsequent suction takes place both within the attachment device and onto and from the semiconductor wafer. Various embodiments of the device allow different exposure variants. The invention can be used in the field of photolithography.

Description

Immersion objective for the stepwise projection imaging of a mask structure

Field of application of the invention

The invention relates to an immersion objective for the stepwise projection imaging of a mask structure on semiconductor wafers for photolithographic processes for the production of semiconductor integrated circuits.

The invention is applicable in the field of semiconductor technology.

Characteristic of the known technical solutions

Optical projection methods and devices are increasingly being used to transfer mask patterns to semiconductor substrates for the fabrication of integrated and highly integrated semiconductor circuits.

By means of such devices, the image or the structure of a mask with the aid of a projection optical system is transmitted to the semiconductor substrate, the highest demands on the resolution of the optics, the image field size, the constancy of the magnification, the radiation source used as well as other imaging parameters. These requirements can only be met with refractive optics with monochromatic imaging.

Due to the large difference between the thickness of the photoresist layer used and the coherence length of the monochromatic light used, interference phenomena occur in the photoresist layer, which have a disruptive effect on the adjustment and imaging process. This Kachteil also occurs in the gradual. Exposure with a reduced magnification (1: χ ) on which has to be adjusted and exposed several times on a semiconductor substrate to the structuring of the total area.

For further structural reduction, for shifting the upper limit of the numerical aperture of the objective and the resolvable borderline frequency as well as for reducing the structural width fluctuations due to interference phenomena in the resist layer in connection with layer thickness fluctuations of the resist, for example at steps of a semiconductor substrate already processed, PS 23 231 known to perform the exposure of the semiconductor substrate in a liquid whose refractive index corresponds to that of the paint coating of the semiconductor substrate.

To carry out this projection method, a liquid is introduced between the projection objective and the semiconductor substrate such that the objective opening and the substrate receptacle with the semiconductor substrate are located completely in the liquid, which is supplied by corresponding devices to a container enclosing the objective and the substrate receptacle and removed therefrom becomes. This method has the disadvantage that substrate motions necessary for carrying out the adjustment and exposure process can be carried out only slowly, since high acceleration and deceleration values would cause the liquid to run out and high structural resolution can be achieved only with calmed medium. Furthermore required

the complete fflüssigkeitsbenetzung a lot of effort in the Subatratzu- and -abführung and the cleaning of the substrate back. When feeding the liquid container with a semiconductor substrate to this adhering air or gas bubbles, as well as in the exposure of positive paint resulting nitrogen bubbles have a detrimental effect on the exposure process, as they lead to incorrect exposures.

In the DD application according to H 01 L / 240 786/8 an immersion objective is described, wherein only the space between the substrate surface to be partially exposed and the lower objective lens is filled with immersion liquid. This space is formed by a sleeve which tapers to an image field size, which sleeve can be connected to the objective on the one hand and lowered on the other hand to a small distance from the semiconductor substrate to be exposed. The feeding of the immersion liquid via an external pressure control and remains after the exposure steps completely on the substrate and must then be removed separately. Furthermore, an uncontrollable leakage of the liquid requires reworking and cleaning of the exposed semiconductor substrate and the substrate uptake and loss of immersion liquid · Likewise enclosed air or gas bubbles can lead to defects during substrate change and when starting the substrate recording depending on the distance between the sleeve and the substrate and thus disturb the image.

- 4 Object of the invention

The object of the invention is to avoid the gas bubbles inclusions interfering with the stepwise, partial pattern imaging with the aid of an immersion objective, as well as the streaking in the immersion liquid, and to exclude the wetting of the wafer edge, the wafer table and the wafer backside with immersion liquid.

Object of the invention

The invention has for its object to provide an immersion objective for the stepwise projection imaging of a mask structure, which makes it possible to produce high resolution pattern structures on semiconductor wafers, wherein high substrate table movements without streaking and interfering Gasblaseneinschlüsse achieved within the immersion liquid, the disc edges and backs, and the disc table will not be wetted by immersion fluid and high initial and final acceleration values of the disc table movement will not affect the quality and productivity of the projection imaging equipment.

Features of the invention

The immersion objective according to the invention has two immersion systems on its side facing the semiconductor substrate. A first immersion system is formed in that the attachment arranged on the objective is closed in a media-tight manner on its substrate-facing and tapered opening by means of a translucent disk, the space between the last optical component of the lens

and the translucent disk is completely filled with an immersion liquid. Furthermore, a second immersion system is provided in that a second immersion liquid is provided between the transparent disk and the semiconductor substrate by a ring arranged parallel to the surface of the semiconductor substrate on the front-end device. The ring has seen in the horizontal substrate table movement, at least one opening in front and at least one opening after the attachment means of the lens, which are connected via hose or pipes with locking devices installed therein and filter and thermostatic devices with supply and pressure compensation devices, said Hose or pipe at the front of the attachment means with the hose or pipe on the provided after the intent device opening form a closed system in which the said devices are integrated. Supply lines for immersion liquid, on the one hand, are provided on the front-end device itself and have pressure-reducing devices, blocking devices, reservoirs and pressure equalization devices as well as thermostating devices which, on the other hand, are connected to discharges, thus providing a closed system.

In the supply lines for the first Immersionssyst em facilities for pressure reduction and liquid distribution are provided immediately before the outlet opening.

Furthermore, the attachment device is designed to be height-adjustable on the lens and is position-limited against an upper and a lower stop.

For immersion exposure, the presetting device has a plane-parallel glass plate or a plano-convex lens of low refractive power at its opening facing the semiconductor wafer and tapered as a transparent disk.

In one embodiment of the solution, the translucent disk consists of a film with a refractive index adapted to the photoresist applied to the semiconductor wafer.

The film can be made in a thickness of 0.5 to 100 / μm and is antireflected on the side facing the lens for the wavelengths of the light used for the structure transfer, covering positioning and / or focusing and of the v / eiteren of the refractive index on the Semiconductor wafer arranged immersion liquid adapted.

It is advantageous if the film consists of nitrocellulose, polyquinoxaline or polycarbonate and that the distance between the plane-parallel glass plate, the plano-convex lens or the film and the surface of the photoresist on the semiconductor wafer in a range of 5, by up to 5 mm.

In a further embodiment of the invention, a guide is provided in the opening of the feed line in the ring arranged vertically on the front side of the device in which a resist-side opening is smaller than the feed line arranged above it, for example like a nozzle and that above the ring as a trained Abstandsmeßeinrichtung sensor is arranged, which is connected to outside of the immersion objective existing means for measured value detection and evaluation in operative connection. It is advantageous if sleeves for the

Distance measurement for focusing are arranged at several points of the ring, for example, at three or more equally spaced guides provided, are arranged. Bs is advantageous if the first and second immersion systems have the same immersion fluid. A further preferred embodiment of the invention is when the surface of the photoresist applied to the semiconductor substrate is pretreated with a medium of low surface tension, for example a wetting agent. The immersion liquid of the first and the second immersion system is thermostated during the exposure process and preferably has a temperature of 22 1 1 0 C.

The light source for the structure transmission has an ultraviolet radiation whose wavelength is in the spectral range of 200 to 450 nm. Before the initiation of an exposure process of a substrate substrate usually mounted on the substrate and coated with photoresist semiconductor substrate whose surface is provided with a medium of low surface tension, for example, with a wetting agent, and the semiconductor substrate is with the substrate recording by means of the corresponding devices in the irradiation area under the 'attachment of the Lens brought. For the purpose of the exposure process, the pre-etching device is completely filled with an immersion liquid between the optically neutral layer which is arranged on the semiconductor substrate facing the tapered opening and consists for example of a plane-parallel glass plate and the objective optical device of the objective with an immersion liquid. and discharged and kept at a constant temperature.

In order to avoid streaking within the immersion liquid in the irradiation area, means for the homogeneous distribution of the same are provided at the feed openings. The discharge of the liquid via suitable filters and is supplied via appropriate pipe or hose lines and thermostatic devices of a pressure compensation and storage device, which in turn is on the output side in connection with the attachment means and thus a first Immersionssyst em is formed. The second immersion system is formed by immediately prior to the initiation of structuring process immersion liquid through the supply opening arranged on the ring, in substrate table movement, before the Vorsatzzeinrichtung, with the aid of the corresponding control and control devices on the semiconductor wafer or with its photoresist and provided with the wetting agent surface and then the intent 'device is lowered so far that the immersion liquid film formed between the ring and the translucent disc on the underside of the attachment device remains constant during the substrate table movement and does not break off. The feeding of the immersion liquid takes place quantitatively so that before the Zuführöfl'nung a liquid sv / all arises. The exposure process, when the liquid has completely filled the gap between the feeder and the semiconductor wafer, is stepped so that the immersion liquid, in the substrate, is behind the feeder, sucked through the corresponding discharge means in the ring and the second

System is fed back. When the direction change of the exposure process takes place at the substrate end, the punctures of the existing supply and discharge devices for the immersion liquid are correspondingly reversed, so that the second exposure track is realized in the return of the substrate table analogously to the forward movement. The operations mentioned are repeated until complete structure of the semiconductor substrate. At the end of the exposure process, with appropriate control of the supply and discharge devices, the immersion liquid located under the attachment device can be sucked off and the attachment device is raised to the appropriate position for the substrate change. The use of the sleeve arranged vertically in the guide within the ring allows in conjunction with FIG the associated means sensor, Meßwerterfassungs- and -auswerteinrichtung the precise exposure distance measurement, focusing and level assignment during the structuring process.

embodiment

The invention will be explained in more detail with reference to an embodiment and drawings. In the drawings show:

Pig. 1: the third chemical representation of an immersion objective according to the invention,

Pig. 2 i is the block diagram of an exposure process, Pig. 3 i a variant of the invention

Immersion lens, schematically t Pig. 4: the device for altitude measurement.

According to the Pig. 1, the immersion objective on the objective 1 has a presetting device 7, which is tapered at its side facing the substrate receptacle 16 up to the exposure diameter. The tapered opening is closed by a transparent disc 3 media-tight by means of a fit 3.1. At the lens-side opening of the attachment device 7, a ring 6 is provided, with which the attachment means 7 is positionally limited against an upper stop 6.1 and a lower stop 6.2. The conical part of the Vorsat ζeinrichtung 7 is double-walled, wherein the inner wall 7.2 at certain points has openings. In the outer wall 7.1 openings are also arranged at predetermined points, in which supply lines 17 and 18 derivatives are involved. Before the openings of the supply and discharge lines 17J 18 baffles 19 are provided between the inner wall 7.2 and the outer wall 7.1.

The supply line 17 provided on the right outer wall 7.1 of the attachment device 7 is connected in its further embodiment to a blocking device 15 and to a pressure compensation and storage device 14, to which a connection 14.1 is provided. The arranged on the left outer wall according to the left 7.1 drain 18 has a Pilter- and thermostating device 8, the output is 8.1 connected to the terminal 14.1. The existing between the lens side last optical component 2 and the optically neutral, translucent disc 3 cavity 4 is completely filled with an immersion liquid 4.1, which is spread over the supply and discharge lines 1-7J 18 and the output 8.1 and the terminal 14.1 and thus forms a closed first immersion system.

To construct a second immersion system, a ring 9 is provided on the underside of the attachment device 7, in which at least one respective opening 10 and is provided, which, viewed in the direction of substrate movement, are arranged before or after the attachment device. The multiple arrangement of the openings 10; 11, for example, be designed so that they are arranged on a common pitch circle, the distance to the lower opening of the attachment means 7 are provided sese to each center. The opening or openings 10 in the ring 9 are connected via corresponding connecting and connecting elements with hose or pipes 12, which are connected in continuation with a pressure equalization and / or storage device 14. The line guide is doing.so designed that the hose or pipe 12 is divided before the pressure equalization and / or storage device, .wobei fluidically a branch 12.1 for a second immersion liquid 4.1, the flow direction through an open locking device 15, and one in the other Branching in the blocking direction arranged blocking device 15.1 the direction of flow is predetermined. Each of the locking device 15 is a filter and thermostatic device 8 is provided and after the pressure equalization and / or storage device 14, the Rohroder hose 12 is continued in the output-side connection and before the branch is the locking device 15.1, now on passage for flowing from this direction immersion liquid 4.1 arranged, provided. If a plurality of tubes or conduits 12 connected as feed lines are provided, these are combined in front of the branch 12.1 so that an introduction of immersion liquid takes place via all openings 10 provided.

The opening or the openings 11 are provided in connection with the hose or pipe 13 in the variant shown in FIG. As suction, wherein the aspirated immersion liquid 4.1 promoted by appropriate means and the facilities .zur preparation and supply to the coated semiconductor substrate 16 before the pre-appliance 7 is supplied.

The openings' 1Oj 11 are depending on the direction of movement of .Halbleitersubstrates 25 v / Ahlweise as feeds for the immersion liquid 4.1 respectively before the sat ζ device 7, or as suction respectively after the attachment means 7 during the movement of the semiconductor substrate 25 used.

The according to the Pig. 1 immersion liquid used. 4.1 is both within the Vorsatzzeinrichtung 7 and between the Vorsatzzeinrichtung 7 and the surface of the coated photoresist 26; 27 thermostated, wherein preferably a temperature of 22 Â £ 1 ° G is kept constant. FIG. 4 shows a device for measuring the difference in distance 9 between the surface of the photoresist 26 and the translucent disk 3 or the lower edge of the ring 9, which corresponds to a predetermined exposure distance. For this purpose, an opening 10 provided in the ring has a guide 20 in which a sleeve 21 with a lower opening formed as a nozzle 24 is movably arranged. The sleeve 21 is coupled above the ring 9 with a sensor 22 which is connected to means for measuring value acquisition and evaluation 23. The top of the sleeve 2.1 is connected to a feed line 17 for the supply of immersion liquid 4.2.

When feeding the immersion liquid 4.1 constant flow rate through the sleeve 21 displaceable with the nozzle 21 causes the reduction of the gap a by raising the disc table an increase dea flow resistance and thus an increase of the force rectifier normal to the surface of the photoresist 26 and the ring 9, thus a displacement of the sleeve 21 is carried out, this registered by the sensor 22 and the information supplied to an electromechanical coupler within the means for Meßwerterfassung and -auswertung 23 and a displacement of the disc table is effected. Advantageously, the trained as a probe sleeve 21 at a plurality of openings 10; 11 is provided, wherein the arrangement preferably provided in a triangular shape within the ring 9 and thus an area allocation can be realized.

The embodiment of the immersion objective shown in FIG. 3 also has an attachment device 7, which is of single-walled construction, and which forms a space 4 between the last optical component 2 on the lens side and the tapered, lower opening.

A translucent disk 3 in a socket 3.1, which corresponds to the diameter of the image field, is provided on its lower opening facing the semiconductor substrate 25 coated with the photoresist 26. The lens-side opening likewise has a ring 6 and a lower and upper stop 6.1; 6.2. The located on the tapered side in a plane with the translucent disk ring 9.1 is with holes / openings 10; 11, which are each arranged on two mutually different pitch circles about the optical axis A.

The openings 10 are spaced two or more times provided on the inner pitch circle and are connected via leads 17 and locking devices 28 centrally connected to a pressure compensation and storage device. On the outer pitch circle at least two or more openings 11 are provided in spaced fashion, the derivatives 18 having locking means 29 which are interconnected in their v / eiteren arrangement and fed via a pipe or hose 13 a filter and thermostating device 8, the output side in turn connected to the input of the pressure equalization or storage device 14. When / before putting into operation of the pretensioner according to the invention the immersion liquid is 4.1 in the corresponding memory devices and the gap a for the exposure distance is set by lowering the attachment means 7 or lifting the disc table. In conjunction with the relative movement of the substrate table 16 associated with the first exposure step, the inflow of the immersion liquid 4.1 via the openings 10 onto the surface of the semiconductor substrate 25 coated with the resist 26 takes place via the feeds 17 such that the gap a is filled with a homogeneous liquid film and Based on the relative movement of the substrate table 16 before the ring 9.1, a narrow liquid wall 4.2 is formed. After the liquid application via the feeders 17 and after an exposure step is carried out by means of a corresponding control of the locking devices 28; 29; 30 and the pressure equalization and storage device 14, the immersion liquid 4.1 discharged through the openings 11 with the connected leads 18 and the downstream devices for cleaning, temperature control and storage 8; 14 forwarded.

2, the block diagram of an exposure process is shown.

The semiconductor substrate exposure is carried out in accordance with a predetermined sequence program such that a semiconductor substrate pretreated with a curing agent is added to the exposure device and fixed on the substrate table after a Vorjustierprozeß.

It is also possible to apply the wetting agent immediately after the pre-adjustment or tensioning process in the exposure device.

Subsequently, the transport of the substrate table with the semiconductor substrate under the lens equipped with the attachment means and the attachment means is lowered to the Be light ungs distance. By the supply of thermostatically controlled immersion liquid through the respective openings in a circular movement of the substrate table, the formation of a stable immersion liquid film between the photoresist or the wetting agent and the lower edge of the translucent disk or the ring on the attachment device is carried out.

In the following step, the first exposure position is approached while further immersion liquid is supplied, the semiconductor substrate is positioned and the first exposure step takes place. The further exposure sequence is carried out analogously to the bristle exposure until complete exposure of the semiconductor substrate and the supply of immersion liquid is blocked.

In the subsequent step, the immersion liquid present on the semiconductor substrate is sucked off by circular movement of the substrate table, and the pre-attachment device is raised, so that finally the substrate changes take place and the subsequent processing of following substrates can be carried out.

The advantages of the immersion objective according to the invention result in particular from the fact that due to the constant flow of immersion liquid both between the front lens and the photoresist on the semiconductor substrate and between the lens side last optical component and the f translucent disc no Staubpartikel-, air or Gasblaseneinschlüsse the exposure process influence negatively. The arrangement of the immersion layer according to the inventive solution further allows to carry out high relative movements of the substrate table, without the semiconductor substrate is contaminated outside the exposure field, as well as a backside contamination is excluded, which leads to a high rework in the known solutions. Furthermore, the wetting of the substrate receptacle and the immediate substrate table area is largely excluded. The treatment of the resist surface with a wetting agent thereby enables an almost complete elimination of immersion liquid, whereby the cleaning effort required for the following processing steps can be greatly reduced.

Claims (15)

  1. -47-
    invention claim
    1. Immersion objective for the projection imaging of a mask structure on semiconductor substrates for photolithographic processes for the production of semiconductor integrated circuits, comprising in a arranged between the lens and the semiconductor substrate Vorsatζeinrichtung a controlled supplied, the refractive index of the photoresist corresponding liquid, characterized in that the lens (1) a first immersion system is provided, wherein the on the lens (1) arranged Vorsat ζeinrichtung (7) on its substrate facing the tapered opening by means of a translucent disc (3) is sealed media-tight and that between the last optical component (2) and the translucent Washer (3) existing cavity (4) with an immersion liquid (4.1) is provided space filling and that further a second immersion system is provided, in which at the Vorsat ζeinrichtung (7) parallel to the surface of the substrate (25) a Ri ng (9) is connected to the housing (7.1) of the translucent disk (3), in which viewed in the substrate movement direction, at least one opening (1 θ) before and at least one opening (11) is arranged after the lens (1) the via hose or pipes (12; 13) with locking devices (15) installed therein as well as filter and thermostating devices (s) with supply and pressure compensation devices (14) are connected and formed as a closed system.
    -AZ-
  2. 2. Immersionsobjektiv according to item 1, characterized in that on der.Vorsatzeinrichtung (7) on the one hand supply lines (17) for Immersionsfliissigkeit (4.1) are provided, in which means for pressure reduction (5) and locking means (15) are included, that further Containers as storage and pressure compensation devices (14) for the immersion liquid (4.1) associated with and on the other hand, at least one derivative (18) with filter and Thermost atiereinrichtungen (8) are arranged with the terminal (14 »1) of the supply and Pressure equalization device (14) form a closed system.
  3. 3. Immersionobjektiv according to item 2, characterized in that in front of the outlet opening of the supply line (17) baffles (19) are arranged.
  4. 4. immersion objective according to items 1 to 3, characterized in that a ring (6) of the Vorsat device (7) on the lens (1) against stops (6.1, 6.2) is height adjustable.
  5. 5. Immersion objective according to item 1, characterized in that the translucent disc (3) consists of a plane-parallel glass plate or a plano-convex lens lower jörechkraft.
  6. 6. Immersion objective according to the items 1 and 5, characterized in that the translucent disc (3) consists of a film with a photoresist (26) matched refractive index.
  7. 7. Immersion objective according to the items 1, 5 and 6, characterized in that the film has a thickness
    - 49-
    between 0.5 and 100 / μm, that the film and the plane-parallel glass plate on the side facing the lens (1) are non-reflective for the wavelengths of the light used for structure transfer, overlap positioning and / or focusing and one of the on the semiconductor substrate ( 25) located immersion liquid (4.i) have adapted refractive index.
  8. 8. Immersion objective according to item 6 and 7, characterized in that the film consists of nitrocellulose, polyquinoxaline or polycarbonate.
  9. 9. Immersion objective according to the items 1 u.5 to 8, characterized in that the translucent disc (3) in a range of 5 / to 5 mm above the semiconductor substrate (25) is arranged.
  10. 10. Immersionsobjektiv according to item 1, characterized in that 'the opening (10) of the supply line (17) has a guide (20) in which a sleeve (21) with a nozzle (24) is arranged vertically movable, wherein at the Sleeve (21) above the ring (9) designed as a distance measuring sensor (22) and also outside of the immersion objective means for measured value detection and evaluation (23) are provided.
  11. 11. Immersion objective according to item 1, characterized in that the second immersion system is provided with the immersion liquid (4.1).
  12. 12. Immersionobjektiv according to the items 1 to 11, characterized in that the surface of the on the semiconductor substrate (25) applied
    - -20-
    Photoresists (26) with a medium of low surface tension, for example with wetting agent (27) pretreated.
  13. 13. Immersion objective according to the items 1 to 12, characterized in that the immersion liquid (4.1) has a predetermined temperature range.
  14. 14. Immersion according to item 13, characterized in that the temperature of the immersion liquid (4.1) is 22 i 1 ° G.
  15. 15. immersion objective according to items 1 to 14, characterized in that is used as the radiation source for the structure transmission ultraviolet light whose wavelength is in the spectral range of 2oo to 45o hm. '.
    - For this see 3 sheets drawings -
DD25480683A 1983-09-14 1983-09-14 Immersions objective for the step-by-step projection imaging of a mask structure DD221563A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DD25480683A DD221563A1 (en) 1983-09-14 1983-09-14 Immersions objective for the step-by-step projection imaging of a mask structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DD25480683A DD221563A1 (en) 1983-09-14 1983-09-14 Immersions objective for the step-by-step projection imaging of a mask structure

Publications (1)

Publication Number Publication Date
DD221563A1 true DD221563A1 (en) 1985-04-24

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