DD221563A1 - Immersion objective for stepwise projection imaging of a mask pattern - Google Patents

Immersion objective for stepwise projection imaging of a mask pattern Download PDF

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Publication number
DD221563A1
DD221563A1 DD25480683A DD25480683A DD221563A1 DD 221563 A1 DD221563 A1 DD 221563A1 DD 25480683 A DD25480683 A DD 25480683A DD 25480683 A DD25480683 A DD 25480683A DD 221563 A1 DD221563 A1 DD 221563A1
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DD
German Democratic Republic
Prior art keywords
immersion
characterized
lens
means
immersion objective
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DD25480683A
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German (de)
Inventor
Rainer Pforr
Peter Westphal
Rolf Stenzel
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Mikroelektronik Zt Forsch Tech
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Priority to DD25480683A priority Critical patent/DD221563A1/en
Publication of DD221563A1 publication Critical patent/DD221563A1/en

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece
    • G03F7/70341Immersion

Abstract

Die Erfindung betrifft ein Immersionsobjektiv fuer die schrittweise Projektionsabbildung einer Maskenstruktur auf Halbleiterscheiben fuer fotolithografische Verfahren zur Herstellung integrierter Halbleiterschaltungen. The invention relates to an immersion objective for stepwise projection imaging a mask pattern on semiconductor wafers for photolithographic process for producing integrated semiconductor circuits. Das Ziel der Erfindung besteht darin, die mittels Immersionsobjektiv herkoemmlicher Bauart entstehenden Gasblaseneinschluesse, Schlierenbildungen sowie Benetzung des Scheibentisches, -randes und der -rueckseite mit Immersionsfluessigkeit zu vermeiden. The object of the invention is to avoid the Gasblaseneinschluesse produced by immersion lens of conventional design, formation of streaks, and also wetting of the disk table, and the -randes or the back with Immersionsfluessigkeit. Die erfindungsgemaesse Aufgabe wird durch eine Vorsatzeinrichtung am Objektiv geloest, mit deren Hilfe eine mengen- und druckdosierte Fluessigkeitszufuehrung waehrend des Belichtungsprozesses sowie deren nachfolgende Absaugung sowohl innerhalb der Vorsatzeinrichtung als auch auf und von der Halbleiterscheibe erfolgt. The inventive object is achieved by an attachment means to the lens, with the aid of a volume and pressure-dosed Fluessigkeitszufuehrung takes place during the exposure process, as well as their subsequent extraction, both within the attachment device and on and from the semiconductor wafer. Verschiedenartige Ausfuehrungen der Vorrichtung ermoeglichen unterschiedliche Belichtungsvarianten. Various embodiments of the device enable different exposure variations. Die Erfindung ist auf dem Gebiet der Fotolithografie einsetzbar. The invention is applicable in the field of photolithography.

Description

Immersionsobjektiv für die schrittweise Projektionsabbildung einer Maskenstruktur Immersion objective for stepwise projection imaging of a mask pattern

Anwendungsgebiet der Erfindung Field of the Invention

Die Erfindung betrifft ein Immersionsobjektiv für die schrittweise Projekt ionsabbildung einer Maskenstruktur auf Halbleiterscheiben für fotolithografische Verfahren zur Herstellung integrierter Halbleiterschaltungen. The invention relates to an immersion objective for stepwise project ionsabbildung a mask pattern on semiconductor wafers for photolithographic process for producing integrated semiconductor circuits.

Die Erfindung ist auf dem Gebiet der Halbleitertechnik anwendbar. The invention is applicable in the field of semiconductor technology.

Charakteristik der bekannten technischen Lösungen Characteristic of the known technical solutions

Zur Übertragung von Maskenstrukturen auf Halbleitersubstrate für die Herstellung von integrierten und höchstintegrierten Halbleiterschaltungen werden in zunehmendem Maße optische Projektionsverfahren und —einrichtungen eingesetzt. For the transmission of mask patterns on semiconductor substrates for the fabrication of LSI and VLSI semiconductor circuits increasingly projection optical methods and equipment are used.

Mittels derartiger Vorrichtungen wird das Bild bzw. die Struktur einer Maske mit Hilfe eines optischen Projektionssystems auf das Halbleitersubstrat übertragen, das höchste Anforderungen an das Auflösungsvermögen der Optik, die Bildfeldgröße, die Konstanz des Abbildungsmaßstabes, der eingesetzten Strahlenquelle sowie andere Abbildungsparameter stellt. By means of such devices, the image is transferred, or the pattern of a mask by using a projection optical system on the semiconductor substrate, represents the highest demands on the resolution of the optics, the image field size, the constancy of the imaging scale, the radiation source used, as well other imaging parameters. Diese Anforderungen sind mit refraktiven Optiken nur bei monochromatischer Abbildung zu erfüllen. These requirements must be met with refractive optics only monochromatic image.

Aufgrund des großen Unterschiedes zwischen der Dicke der eingesetzten Fotoresistschicht und der Kohärenzlänge des verwendeten monochromatischen Lichtes treten in der Fotoresistschicht Interferenzerscheinungen auf, die sich störend auf den Justier- und Abbildungsprozeß auswirken. Due to the large difference between the thickness of the photoresist film used and the coherence length of the monochromatic light used interference phenomena occur in the photoresist layer which have a disruptive effect on the adjustment and mapping process. Dieser Kachteil tritt auch bei der schrittweisen. This Kachteil also occurs in gradually. Belichtung mit einem reduzierten Abbildungsmaßstab (1 : χ ) auf, wobei auf einem Halbleitersubstrat bis zur Strukturierung der Gesamtfläche mehrmals justiert und belichtet werden muß. Exposure with a reduced magnification (1: χ), wherein must be repeatedly adjusted and exposed on a semiconductor substrate to the structuring of the total area.

Zur weiteren Strukturverkleinerung, zur Verschiebung der oberen Grenze der numerischen Apertur des Objektivs und der auflösbaren Grenzortsfrequenz sowie der Senkung der Strukturbreitenschwankungen infolge von Interferenzerscheinungen in der ßesistschicht in Verbindung mit Schichtdickenschwankungen des Resists, zum Beispiel an Stufen eines bereits bearbeiteten Halbleitersubstrates, ist aus der EP -\PS 23 231 bekannt, die Belichtung des Halbleitersubstrates in einer Flüssigkeit durchzuführen, deren Brechungsindex dem des Lacküberzuges des Halbleitersubstrates entspricht. For further structural reduction, for shifting the upper limit of the numerical aperture of the lens and the resolvable limit spatial frequency as well as the reduction of the structure width variations due to interference phenomena in the ßesistschicht in conjunction with variations in layer thickness of the resist, for example at levels of an already processed semiconductor substrate, is known from EP - \ Patent 23 231. to carry out the exposure of the semiconductor substrate in a liquid whose refractive index matches that of the enamel coating of the semiconductor substrate.

Zur Durchführung dieses Projektionsverfahrens wird zwischen dem Projektionsobjektiv und dem Halbleitersubstrat eine Flüssigkeit so eingebracht, daß sich die Objektivöffnung sowie die Substrataufnahme mit dem Halbleitersubstrat vollständig in der Flüssigkeit befinden, die durch entsprechende Einrichtungen einem das Objektiv und die Substrataufnahme einschließenden Behälter zu— und von diesem abgeführt wird. To carry out this projection method is introduced between the projection lens and the semiconductor substrate, a liquid such that the lens aperture and the substrate support with the semiconductor substrate are located completely in the liquid, the one lens and the substrate support to-enclosing container by appropriate means and discharged by this becomes. Diesem Verfahren haftet der Nachteil an, daß zur Durchführung des Justier- und Belichtungsprozesses erforderliche Substrattischbewegungen nur langsam durchgeführt werden können, da hohe Beschleunigungsund Verzögerungswerte ein auslaufen der Flüssigkeit bewirken würden und hohe Strukturauflösung nur bei beruhigten Medium zu erzielen sind. This method has the disadvantage that for carrying out the alignment and exposure process required substrate table movements can be carried out slowly, since high acceleration and deceleration values ​​leak a fluid would cause and high pattern resolution can only be achieved at calmed medium. Weiterhin erfordert still requires

die vollständige fflüssigkeitsbenetzung einen hohen Aufwand bei der Subatratzu- und -abführung sowie der Reinigung der Substratrückseite. the complete fflüssigkeitsbenetzung a high effort in Subatratzu- and output and the cleaning of the substrate backside. Bei der Beschickung des Flüssigkeitsbehälters mit einem Halbleitersubstrat an diesem anhaftende Luft- oder Gasbläschen, sowie bei der Belichtung von Positivlack entstehende Stickstoffbläschen wirken sich nachteilig auf den Belichtungsprozeß aus, da diese zu Fehlbelichtungen führen. When the feed of the liquid container with a semiconductor substrate at this adhering of air or gas bubbles, as well as in the exposure of the positive photoresist resulting nitrogen bubbles are detrimental effect on the exposure process, since these lead to errors in exposure.

In der DD-Anmeldung gemäß H 01 L / 240 786/8 ist ein Immersionsobjektiv beschrieben, wobei nur der Raum zwischen der partiell zu belichtenden Substratfläche und der unteren Objektivlinse mit Immersionsflüssigkeit ausgefüllt ist. In DD-registration according H 01 L / 240 786/8, an immersion lens is described, in which only the space between the partially substrate to be exposed surface and the lower objective lens is filled with immersion liquid. Dieser Raum wird durch eine sich auf Bildfeldgröße verjüngende Hülse gebildet, die einerseits mit dem Objektiv verbunden und andererseits bis auf einen geringen Abstand zu dem zu belichtenden Halbleitersubstrat abgesenkt werden kann. This space is formed by a tapered on image field size sleeve which can be connected both to the lens and the other part is lowered up to a small distance from the to be exposed semiconductor substrate. Die Zuführung der Immersionsflüssigkeit erfolgt über eine externe Drucksteuerung und verbleibt nach den Belichtungsschritten vollständig auf dem Substrat und muß anschließend separat entfernt werden. The supply of immersion liquid takes place via an external pressure control and remains after the exposure steps entirely on the substrate and must subsequently be removed separately. Des weiteren erfordert ein unkontrollierbares Auslaufen der Flüssigkeit Nacharbeit und Reinigungsaufwand des belichteten Halbleitersubstrates und der Substrataufnahme und Verlust von Immersionsflüssigkeit· Ebenso können eingeschlossene Luft- oder Gasbläschen beim Substratwechsel und beim Anfahren der Substrataufnahme je nach Abstand zwischen der Hülse und dem Substrat zu Defekten führen und somit abbildungsstörend wirken. Further requires an uncontrollable leakage of liquid rework and cleaning costs of the exposed semiconductor substrate and the substrate receiving and loss of immersion liquid · also can lead, depending on the distance between the sleeve and the substrate to be broken entrapped air or gas bubbles during substrate exchange, and when approaching the substrate support, and thus act illustration disturbing.

- 4 Ziel der Erfindung - 4 object of the invention

Das Ziel der Erfindung besteht darin, die bei der schrittweisen, partiellen Strukturabbildung mit Hilfe eines Immersionsobjektives störenden Gasblaseneinschlüsse sowie die Schlierenbildung in der Immersionsflüssigkeit zu vermeiden und die Benetzung des Scheibenrandes, des Scheibentisches und der Scheibenrückseite mit Immersionsflüssigkeit auszuschließen. The aim of the invention is to avoid in the gradual, partial structure figure with the aid of an immersion objective interfering gas bubble inclusions and the formation of streaks in the immersion liquid and to prevent the wetting of the wafer edge, the wafer table and the wafer back surface with the immersion liquid.

Aufgabe der Erfindung OBJECT OF THE INVENTION

Der Erfindung liegt die Aufgabe zugrunde, ein Immersionsobjektiv für die schrittweise Projektionsabbildung einer Maskenstruktur zu schaffen, das es ermöglicht, Maskenstrukturen hoher Strukturauflösung auf Halbleiterscheiben zu erzeugen, wobei hohe Substrattischbewegungen ohne Schlierenbildung und störende Gasblaseneinschlüsse innerhalb der Immersionsflüssigkeit erreicht, die Scheibenränder und -rückseiten, sowie der Scheibentisch durch Immersionsflüssigkeit nicht benetzt werden und hohe Anfangs- und Endbeschleunigungswerte der Scheibentischbewegung keine Auswirkungen auf die Qualität und Produktivität der Anlage zur Projektionsabbildung bewirken. The invention has for its object to provide an immersion objective for stepwise projection imaging of a mask pattern, which makes it possible to generate mask patterns high structure resolution on semiconductor wafers, said high substrate table movements without streaking and interfering gas bubble inclusions achieved within the immersion liquid, the disc edges and -rückseiten and the disc table are not wetted by immersion liquid and high initial and Endbeschleunigungswerte the disc table movement cause any impact on the quality and productivity of the plant for projection imaging.

Merkmale der Erfindung Features of the invention

Das erfindungsgemäße Immersionsobjektiv weist an seiner dem Halbleitersubstrat zugewandten Seite zwei Immersionssysteme .auf, wobei ein erstes Immersionssystem dadurch gebildet ist, daß die am Objektiv angeordnete Vorsat ζeinrichtung an ihrer dem Substrat zugewandten und verjüngten Öffnung mittels einer lichtdurchlässigen Scheibe mediendicht verschlossen ist, wobei der Raum zwischen dem letzten optischen Bauteil des Objektivs The immersion objective according to the invention has, on its side facing the semiconductor substrate side two immersion systems .on, wherein a first immersion system is formed in that arranged at the lens Vorsat ζeinrichtung on its side facing the substrate and the tapered opening is a media-tight closed by a transparent pane, where the space between the last optical component of the lens

und der lichtdurchlässigen Scheibe mit einer Immersionsflüssigkeit vollständig gefüllt ist. and the transparent pane with an immersion liquid is completely filled. Weiterhin ist ein zweites Immersionssystem dadurch vorgesehen, daß eine zweite Immersionsflüssigkeit zwischen der lichtdurchlässigen Scheibe und dem Halbleitersubstrat durch einen an der Vorsatzeinrichtung parallel zur Oberfläche des Halbleitersubstrates angeordneten Ring vorgesehen ist. Further, a second immersion system is provided characterized in that a second immersion liquid between the light-transmissive plate and the semiconductor substrate is provided by an arranged parallel to the surface of the semiconductor substrate on the attachment means ring. Der Ring weist dazu in der horizontalen Substrattischbewegung gesehen, wenigstens eine Öffnung vor und wenigstens eine Öffnung nach der Vorsatzeinrichtung des Objektivs auf, die über Schlauch- oder Rohrleitungen mit darin installierten Sperreinrichtungen sowie Filter- und Thermostatiereinrichtungen mit Zuführ- und Druckausgleichseinrichtungen verbunden sind, wobei die Schlauch- oder Rohrleitung an der vor der Vorsatzeinrichtung mit der Schlauch- oder Rohrleitung an der nach der Vorsatz einrichtung vorgesehenen Öffnung ein geschlossenes System bilden, in dem die genannten Einrichtungen integriert sind. The ring has for this purpose in the horizontal substrate table movement seen, at least one opening in front of at least one opening after the attachment means of the lens, which are connected via hoses or pipes having installed therein locking means as well as filtering and Thermostatiereinrichtungen with feed and pressure equalization means, said at the front of the attachment device with the hose or pipe provided on the device according to the attachment opening formed hose or pipe a closed system in which said means are integrated. An der Vorsatzeinrichtung selbst sind einerseits Zuleitungen für Immersionsflüssigkeit vorgesehen, die Einrichtungen zur Druckreduzierung, Sperreinrichtungen, Behälter als Speicher- und Druckausgleichseinrichtung sowie Thermostatiereinrichtungen aufweisen, die andererseits mit Ableitungen verbunden sind, womit ein geschlossenes System vorliegt. Supply lines for the immersion liquid on the one hand provided on the attachment means itself having means for reducing the pressure, locking means, as a storage and container pressure equalization device and Thermostatiereinrichtungen the other hand, are connected to leads, with which a closed system is present.

In den Zuleitungen für das erste Immersionssyst em sind unmittelbar vor deren Austrittsöffnung Einrichtungen zur Druckreduzierung und Flüssigkeitsverteilung vorgesehen. In the supply lines for the first Immersionssyst em means are provided for pressure reduction and fluid distribution immediately before the outlet opening.

Des weiteren ist die Vorsatzeinrichtung am Objektiv höhenverstellbar ausgebildet und ist gegen einen oberen und einen unteren Anschlag lagebegrenzt. Furthermore, the attachment means on the lens is designed to be height adjustable and against an upper position and a lower stop.

Zur Immersionsbelichtung weist die Vorsatzeinrichtung an ihrer der Halbleiterscheibe zugewandten und verjüngten Öffnung als lichtdurchlässige Scheibe eine planparallele Glasplatte oder eine plankonvexe Linse niedriger Brechkraft auf. For immersion exposure, the attachment means on their side facing the semiconductor wafer and on the tapered opening as the light transmissive disk has a plane-parallel glass plate or a plano-convex lens of low refractive power.

In einer Ausgestaltung der Lösung besteht die lichtdurchlässige Scheibe aus einer Folie mit einer dem auf der Halbleiterscheibe aufgebrachten Fotoresist angepaßten Brechzahl. In one embodiment, the solution of the light-transmitting plate is composed of a film having a the pressure applied to the semiconductor wafer photoresist matched refractive index.

Die Folie kann in einer Dicke von 0,5 bis 100 /um ausgeführt sein und ist an der dem Objektiv zugewandten Seite für die zur Strukturübertragung, Uberdeckungspositionierung und / oder Fokussierung benutzten Wellenlängen des eingesetzten Lichtes entspiegelt und des v/eiteren der Brechzahl der auf der Halbleiterscheibe angeordneten Immersionsflüssigkeit angepaßt. The film can to be performed in a thickness of 0.5 to 100 /, and on the side facing the lens side for the used for pattern transfer, Uber cover positioning and / or focusing wavelengths of the light used anti-reflective coating and the v / Eiteren the refractive index of on the semiconductor wafer disposed immersion liquid adjusted.

Es ist vorteilhaft, wenn die Folie aus Nitrozellulose, Polychinoxalin oder Polycarbonat besteht und daß der Abstand zwischen der planparallelen Glasplatte, der plankonvexen Linse oder der Folie und der Oberfläche des auf der Halbleiterscheibe befindlichen Fotoresist in einem Bereich von 5 ,um bis 5 mm beträgt. It is advantageous if the film of nitrocellulose, polyquinoxaline or polycarbonate, and in that the distance between the plane-parallel glass plate, the plano-convex lens or the film and the surface of the photoresist in a range of 5 located on the semiconductor wafer to be up to 5 mm.

In einer v/eiteren Ausgestaltung der Erfindung ist in der Öffnung der Zuleitung in dem an der Vorsatzeinrichtungsunterseite angeordneten Ring eine Führung vorgesehen, in der vertikal beweglich eine Hülse angeordnet ist, deren resistseitige Öffnung kleiner als die darüber angeordnete Zuleitung, beispielsweise wie eine Düse, ausgebildet und daß oberhalb des Ringes ein als Abstandsmeßeinrichtung ausgebildeter Sensor angeordnet ist, der mit außerhalb des Immersionsobjektives vorhandenen Mitteln zur Meßwert erfassung und -auswertung in Wirkverbindung steht. In a v / Eiteren embodiment of the invention a guide is in the opening of the supply line in which arranged on the header bottom face ring is provided, a sleeve is disposed in the vertically movable, the resist side opening formed smaller than the arranged above supply line, for example, as a nozzle, and that designed as a distance measuring sensor is arranged above the ring, with gathering the existing outside the immersion objective means for measurement and evaluation is in operative connection. Es ist vorteilhaft, wenn Hülsen für die It is advantageous if the sleeves for

Abstandsmessung zur Fokussierung an mehreren Stellen des Ringes angeordnet sind, beispielsweise an drei oder mehr in gleichem Abstand zueinander vorgesehenen Führungen, angeordnet sind. Distance measurement are arranged to focus at several points of the ring, are arranged for example at three or more equally spaced guides provided. Bs ist v/eiterhin vorteilhaft, wenn das erste und das zweite Immersionssystem die gleiche Immersionsflüssigkeit auf v/eisen. Bs is v / eiterhin advantageous if the first and second immersion system, the same immersion liquid on v / iron. Eine weitere bevorzugte Ausgestaltung der Erfindung besteht darin, wenn die Oberfläche des auf dem Halbleitersubstrat aufgebrachten Fotoresists mit einem Medium geringer Oberflächenspannung, beispielsweise einem netzmittel, vorbehandelt ist. A further preferred embodiment of the invention is when the surface of the deposited on the semiconductor substrate photoresist is pre-treated with a medium of low surface tension, such as a wetting agent. Die Immersionsflüssigkeit des ersten und des zweiten Immersionssystems ist während des Belichtungsvorganges thermostatiert und weist vorzugsweise eine Temperatur von 22 £ 1 0 C auf. The immersion fluid of the first and second immersion system is thermostated during the exposure process and preferably has a temperature of 22 £ 1 0 C.

Die Lichtquelle für die Strukturübertragung weist eine ultraviolette Strahlung auf, deren Wellenlänge im Spektralbereich von 200 bis 450 nm liegt. The light source for the pattern transfer has a ultraviolet radiation whose wavelength is in the spectral range from 200 to 450 nm. Vor der Einleitung eines Belichtungsprozesses eines auf der Substrataufnahme üblicherweise befestigten und mit Fotoresist beschichteten Halbleitersubstrates wird dessen Oberfläche mit einem Medium geringer Oberflächenspannung, beispielsweise mit einem Netzmittel, versehen und das Halbleitersubstrat wird mit der Substrataufnahme mittels der entsprechenden Einrichtungen in den Bestrahlbereich unter die 'Vorsatzeinrichtung des Objektivs gebracht. Prior to the initiation of an exposure process, one on the substrate receiving commonly mounted and coated with photoresist semiconductor substrate whose surface with a medium of low surface tension, for example, with a wetting agent is provided, and the semiconductor substrate with the substrate receiving means of the corresponding means in the Bestrahlbereich under the 'attachment device of the brought lens. Zum Zweck des Belichtungsprozesses ist die Vorsatzeinrichtung zwischen der an der dem Halbleitersubstrat zugewandten, verjüngten öffnung angeordneten optisch neutralen Schicht, die beispielsweise aus einer planparallelen Glasplatte besteht, und dem objektivseitig letzten optischen Bauelement des Objektivs mit einer Immersionsflüssigkeit vollständig ausgefüllt, wobei die Immersionsflüssigkeit ständig zu— und abgeführt sowie auf einer konstanten Temperatur gehalten wird. For the purpose of the exposure process, the attachment means between the on the side facing the semiconductor substrate, the tapered opening is arranged optically neutral layer, which consists for example of a plane-parallel glass plate, and completely filled the objective side last optical element of the lens with an immersion liquid, the immersion liquid is continuously increasing is and discharged and maintained at a constant temperature.

Zur- Vermeidung von Schlierenbildungen innerhalb der Immersionsflüssigkeit im Bestrahlbereich sind an den Zuführöffnungen Mittel zur homogenen Verteilung derselben vorgesehen. Zur- prevent formation of streaks in the immersion liquid in Bestrahlbereich are provided at the feed means for homogeneous distribution of the same. Die Abführung der Flüssigkeit erfolgt über geeignete Filter und wird über entsprechende Rohr- oder Schlauchleitungen sowie Thermostatiereinrichtungen einer Druckausgleichs- und Speichereinrichtung zugeführt, die ausgangsseitig wiederum mit der Vorsatzeinrichtung in Verbindung steht und somit ein erstes Immersionssyst em gebildet ist. The discharge of the liquid takes place via suitable filters and is fed via respective pipes or hoses, and a pressure equalizing Thermostatiereinrichtungen and storage device, which in turn is on the output side with the attachment means in communication, thus forming a first Immersionssyst em. Das zweite Immersionssystem wird dadurch gebildet, daß unmittelbar vor der Einleitung des Strukturierungs· Prozesses Immersionsflüssigkeit durch die an dem Ring angeordneten Zuführungsöffnung, in Substrattischbewegung gesehen, vor der Vorsatzeinrichtung, mit Hilfe der entsprechenden Regel- und Steuereinrichtungen auf die Halbleiterscheibe bzw. dessen mit Fotoresist und mit dem Netzmittel versehene Oberfläche gegeben und anschließend die Vorsatz-' einrichtung so weit abgesenkt wird, daß der sich zwischen dem Ring und der lichtdurchlässigen Scheibe an der Unterseite der Vorsatzeinrichtung gebildete Immersionsflüssigkeitsfilm während der Substrattischbewegung konstant bleibt und nicht abreißt. The second immersion system is formed in that immediately prior to the initiation of the patterning · process immersion liquid through the arrayed on the annular supply opening, as seen in the substrate table movement, prior to the attachment means, with the aid of the corresponding control and control devices on the semiconductor wafer or its with photoresist and optionally provided with the wetting surface and then 'means the Vorsatz- is lowered so that the immersion liquid film is formed between the ring and the translucent sheet at the bottom of the facing means remains constant during the substrate table movement and does not break. Die Zuführung der Immersionsflüssigkeit erfolgt dabei mengenmäßig so, daß vor der Zuführöfl'nung ein Flüssigkeit sv/all entsteht. The supply of the immersion liquid is carried out quantitatively so that before the Zuführöfl'nung a liquid sv / all created. Der Belichtungsprozeß eriolgt, wenn aie Flüssigkeit den Spalt zwischen der Vorsahzeinrichtung und der Halbleiterscheibe voll ausgefüllt hat, schrittweise so, daß die Immersionsflüssigkeit, in Substrat t is chbev/egungsrichtung hinter der Vorsatzeinrichtung, durch die entsprechenden Abführeinrichtungen im Ring abgesaugt und dem zweiten The exposure process eriolgt when aie fluid has completely filled the gap between the Vorsahzeinrichtung and the semiconductor wafer, stepwise so that the immersion liquid, sucked in substrate t is chbev / egungsrichtung behind the attachment means, through the corresponding discharge devices in the ring and the second

System wieder zugeführt wird. System is returned. Bei der am Substrat— ende erfolgenden Richtungsänderung des Belichtungsvorganges werden die Punktionen der vorhandenen Zu- und Abführeinrichtungen für die Immersionsflüssigkeit entsprechend umgesteuert, so daß die zweite Belichtungsspur bei der Rückführung des Substrattisches analog der Vorwärtsbewegung realisiert wird. At the end of taking place on the substrate direction change of the exposure process that punctures the existing supply and discharge devices for the immersion liquid will be reversed accordingly, so that the second exposure track is realized in the return of the substrate table analogous to the forward motion. Die genannten Operationen werden bis zur vollständigen Struktur!erung des Halbleitersubstrates wiederholt. The above operations are repeated until the complete structure! Augmentation of the semiconductor substrate. Am Ende des Belichtungsvorganges kann bei entsprechender Steuerung der Zu- und Abführeinrichtungen die unter der Vorsatzeinrichtung befindliche Immersionsflüssigkeit abgesaugt werden und die Vorsatzeinrichtung wird für den Substratwechsel in die entsprechende Position angehoben» Der Einsatz der vertikal in der Führung innerhalb des Ringes angeordneten Hülse ermöglicht in Verbindung mit den zugeordneten Mitteln Sensor, Meßwerterfassungs- und -auswerteeinrichtung die präzise Belichtungsabstandsmessung, Fokussierung und Ebenenzuordnung während des Strukturierungsprozesses. At the end of the exposure process with appropriate control of the inlet and outlet facilities, the immersion liquid located below the attachment device can be aspirated and the attachment means is raised for the substrate change in the corresponding position "The use of vertically arranged in the guide within the ring sleeve, in conjunction with the associated sensor means, data acquisition and evaluation device the precise exposure distance measurement, focusing, and layer assignment during the patterning process.

Ausführungsbeispiel embodiment

Die Erfindung wird anhand eines Ausführungsbeispieles und Zeichnungen näher erläutert. The invention will be explained in more detail using an exemplary embodiment and drawings. In den Zeichnungen zeigen: In the drawings:

Pig. Pig. 1 : die 3.chematische Darstellung eines Immersionsobjektives gemäß der Srfindung, 1: the 3.chematische representation of an immersion objective lens according to the Srfindung,

Pig. Pig. 2 i das Blockschaltbild eines Belichtungsvorganges, Pig. I 2 is a block diagram of an exposure process, Pig. 3 i eine Variante des erfindungsgemäßen 3 i a variant of the invention

Immersionsobjektivs, schematisch t Pig. Immersion objective, schematically t Pig. 4 : die Einrichtung zur Höhenmessung. 4: the means for height measurement.

Gemäß der Pig. According to Pig. 1 weist das Immersionsobjektiv am Objektiv 1 eine Vorsatzeinrichtung 7 auf, die an ihrer, der Substrataufnahme 16 zugewandten Seite bis auf den Belichtungsdurchmesser verjüngt ist. 1, the immersion objective lens 1 at an attachment device 7 which is tapered on its, the substrate holder 16 side facing up on the exposure diameter. Die verjüngte Öffnung ist durch eine lichtdurchlässige Scheibe 3 mediendicht mittels einer Passung 3.1 verschlossen. The tapered opening is media-tight manner by a transparent plate 3 closed by means of a fit 3.1. An der objektivseitigen Öffnung der Vorsatzeinrichtung 7 ist ein Ring 6 vorgesehen, womit die Vorsatzeinrichtung 7 gegen einen oberen Anschlag 6.1 sowie einen unteren Anschlag 6.2 lagebegrenzbar ist. At the lens-side opening of the attachment means 7, a ring 6 is provided, with which the attachment means 7 is lagebegrenzbar against an upper stop and a lower stop 6.2 6.1. Der kegelförmige Teil der Vorsat ζeinrichtung 7 ist doppelwandig ausgeführt, wobei die innere Wandung 7.2 an bestimmten Stellen Öffnungen aufweist. The conical part of the Vorsat ζeinrichtung 7 is double-walled, the inner wall of which has openings at certain locations 7.2. In der Außenwand 7.1 sind ebenfalls an vorbestimmten Punkten Öffnungen angeordnet, in denen Zuleitungen 17 bzw. Ableitungen 18 eingebunden sind. In the outer wall of 7.1 orifices are also disposed at predetermined points in which leads 17 and discharges are integrated 18th Vor den Öffnungen der Zu- bzw. Ableitungen 17J 18 sind zwischen der Innenwand 7.2 und der Außenwand 7.1 Prallbleche 19 vorgesehen. Front of the openings of the supply and discharge lines 17J 18 7.1 baffles 19 are provided between the inner wall and the outer wall 7.2.

Die an der zeichnungsgemäß rechten Außenwand 7.1 der Vorsatzeinrichtung 7 vorgesehene Zuleitung 17 ist in ihrer weiteren Ausführung mit einer Sperreinrichtung 15 sowie mit einer Druckausgleichs- und Speichereinrichtung 14 verbunden, an der ein Anschluß 14.1 vorgesehen ist. The provided on the right according to the drawing outer wall 7.1 of the attachment means 7 supply line 17 is connected in its further embodiment with a locking device 15 as well as with a pressure-compensating and storage device 14, to which a terminal is provided 14.1. Die an der zeichnungsgemäß linken Außenwand 7.1 angeordnete Ableitung 18 weist eine Pilter- und Thermostatiereinrichtung 8 auf, deren Ausgang 8.1 mit dem Anschluß 14.1 verbunden ist. The arranged on the drawing of the left outer wall 18 has a derivation 7.1 Pilter- Thermostatiereinrichtung and 8, whose output is connected to the terminal 8.1 14.1. Der zwischen dem objektivseitig letzten optischen Bauteil 2 und der optisch neutralen, durchscheinenden Scheibe 3 vorhandene Hohlraum 4 ist vollständig mit einer Immersionsflüssigkeit 4.1 angefüllt, die über die Zu- und Ableitungen 1-7J 18 sowie den Ausgang 8.1 und den Anschluß 14.1 ausgebreitet ist und somit ein geschlossenes erstes Immersionssystem bildet. The existing between the objective side last optical element 2 and the optically neutral, translucent disk 3 cavity 4 is completely filled with an immersion liquid 4.1, which is spread over the supply and discharge lines 1-7J 18 and the output 8.1 and the terminal 14.1 and thus forms a closed first immersion system.

Zum Aufbau eines zweiten Immersionssystems ist an der Unterseite der Vorsatzeinrichtung 7 ein Ring 9 vorgesehen, in dem wenigstens je eine öffnung 10 und vorgesehen ist, die in Substratbewegungsrichtung gesehen, vor bzw. nach der Vorsatzeinrichtung angeordnet sind. For the construction of a second immersion system to the underside of the attachment means 7 is a ring 9 is provided in which one opening is at least 10 and provided, as seen in the substrate movement direction, are arranged before and after the attachment means. Die mehrfache Anordnung der öffnungen 10; The multiple arrangement of the openings 10; 11 kann beispielsweise so ausgeführt sein, daß sie auf einem gemeinsamen Teilkreis angeordnet, um die untere öffnung der Vorsatzeinrichtung 7 abstandswei— se bis jeweils mittig vorgesehen sind. 11 may be configured to, for example, that it placed on a common pitch circle, around the lower opening of the attachment means 7 se abstandswei- to are each provided centrally. Die Öffnung bzw. Öffnungen 10 in dem Ring 9 sind über entsprechende Anschluß— und Verbindungselemente mit Schlauchoder Rohrleitungen 12 verbunden, die in Weiterführung mit einer Druckausgleichs- oder / und Speichereinrichtung 14 verbunden sind. The opening or openings 10 in the ring 9 are connected via corresponding supply and connecting elements with hose or pipe lines 12 which are connected in continuation with a pressure-equilibration and / or storage means fourteenth Die Leitungsführung ist dabei.so gestaltet, daß die Schlauch- oder Rohrleitung 12 vor der Druckausgleichs- oder / und Speichereinrichtung geteilt ist,.wobei strömungstechnisch eine Verzweigung 12.1 für eine zweite Immersionsflüssigkeit 4.1 die Strömungsrichtung durch eine offene Sperreinrichtung 15, sowie eine in der anderen Verzweigung in Sperrichtung angeordnete Sperreinrichtung 15.1 die Flußrichtung vorgegeben ist. The wiring is dabei.so designed such that the hose or pipe 12 is divided prior to the pressure equalization and / or storage means, .wobei fluidically a branch 12.1 for a second immersion liquid 4.1 the direction of flow by an open lock means 15, as well as in the other branch arranged in reverse blocking device 15.1 the direction of flow is predetermined. Each der Sperreinrichtung 15 ist eine Filter- und Thermostatiereinrichtung 8 vorgesehen und nach der Druckausgleichs- und / oder Speichereinrichtung 14 ist in deren ausgangsseitigem Anschluß die Rohroder Schlauchleitung 12 weitergeführt und vor der Verzweigung ist die Sperreinrichtung 15.1, jetzt auf Durchgang für aus dieser Richtung strömende Immersionsflüssigkeit 4.1 angeordnet, vorgesehen. Each of the barrier means 15 is a filter and Thermostatiereinrichtung 8 is provided and after the pressure equalization and / or storage device 14, the tube or hose is continued 12 in the output-terminal and before the branching, the locking means is 15.1, now on passage for air flowing from this direction immersion liquid 4.1 arranged, is provided. Wenn mehrere als Zuleitungen geschaltete Schlauchoder Rohrleitungen 12 vorgesehen sind, sind diese vor der Verzweigung 12.1 vereinigt, so daß eine Zuführung von Immersionsflüssigkeit über alle vorgesehenen Öffnungen 10 erfolgt. If several supply lines connected as a hose or pipe lines 12 are provided, they are united in front of the branching 12.1, so that a supply of immersion liquid over all the openings provided 10 takes place.

Die Öffnung oder die Öffnungen 11 sind in Verbindung mit der Schlauch- oder Rohrleitung 13 in der in Fig. dargestellten Variante als Absaugung vorgesehen, wobei die abgesaugte Immersionsflüssigkeit 4.1 durch entsprechende Einrichtungen gefördert und den Einrichtungen .zur Aufbereitung und Zuführung auf das beschichtete Halbleitersubstrat 16 vor der Vorsatzeinrichtung 7 zugeführt wird. The opening or openings 11 are provided in connection with the hose or pipe 13 in. Illustrated in Fig variant as extraction, the extracted immersion liquid 4.1 promoted by appropriate means and before the means .to the preparation and feed to the coated semiconductor substrate 16 the attachment means is fed. 7

Die Öffnungen '1Oj 11 sind in Abhängigkeit von der Bewegungsrichtung des .Halbleitersubstrates 25 v/ahlweise als Zuführungen für die Immersionsflüssigkeit 4.1 jeweils vor der Vor sat ζ einrichtung 7, bzw. als Absaugung jeweils nach der Vorsatzeinrichtung 7 während der Bewegung des Halbleitersubstrates 25 einsetzbar. The apertures' 1Oj 11 are a function of the direction of movement of .Halbleitersubstrates 25 v / ahlweise as supply lines for the immersion liquid 4.1 before each ζ Before sat device 7, and used as a suction in each case after the attachment means 7 during the movement of the semiconductor substrate 25th

Die gemäß der Pig. The according to the Pig. 1 verwendete Immersionsflüssig-. 1 used Immersionsflüssig-. keit 4.1 ist sowohl innerhalb der Vorsatzeinrichtung 7 als auch zwischen der Vorsatzeinrichtung 7 und der Oberfläche des beschichteten Fotoresists 26; ness 4.1 is both within the attachment means 7 and between the attachment means 7 and the surface of the coated photoresist 26; 27 thermostatiert, wobei vorzugsweise eine Temperatur von 22 £ 1° G konstant gehalten ist. thermostated 27, wherein preferably a temperature of 22 ° £ 1 G is kept constant. In der Fig. 4 ist eine Einrichtung zur Differenzmessung des Abstandes 9 zwischen der Oberfläche des Fotoresists 26 und der lichtdurchlässigen Scheibe 3 bzw. der Unterkante des Ringes 9, die einem vorgegebenen Belichtungsabstand entspricht, dargestellt. In FIG. 4 is an apparatus for difference measurement of the distance 9 between the surface of the photoresist 26 and the light transmitting plate 3 or the lower edge of the ring 9, which corresponds to a predetermined exposure interval represented. Dazu .weist eine in dem Ring vorgesehene Öffnung 10 eine Führung 20 auf, in der eine Hülse 21 mit einer als eine Düse 24 ausgebildeten unteren Öffnung beweglich angeordnet ist. .Weist by an opening provided in the ring opening 10, a guide 20, in which a sleeve is arranged movably with a designed as a nozzle 24 lower opening 21st Die Hülse 21 ist oberhalb des Ringes 9 mit einem Sensor 22 gekoppelt, der mit Mitteln zur Meßwerterfassung und —auswertung 23 verbunden ist. The sleeve 21 is coupled above the ring 9 having a sensor 22 which is connected to means for data acquisition and analysis 23rd Die Oberseite der Hülse 2.1 ist mit einer Zuleitung 17 für die Zuführung von Immersionsflüssigkeit 4.2 verbunden. The top of the sleeve 2.1 is connected to a supply line 17 for supplying immersion liquid 4.2.

Bei der Zuführung der Immersionsflüssigkeit 4.1 konstanter Strömungsgeschwindigkeit durch die mit der Düse 24 verschiebbare Hülse 21 bewirkt die Verkleinerung des Spaltes a durch Anheben des Scheibentisches eine Erhöhung dea Strömungswiderstandes und somit eine Vergrößerung des Kraftrektors normal zur Oberfläche des Fotoresists 26 bzw. dem Ring 9, womit eine Verschiebung der Hülse 21 erfolgt, diese von dem Sensor 22 registriert und die Information an einen elektromechanischen Koppler innerhalb der Mittel zur Meßwerterfassung und -auswertung 23 zugeführt und eine Verschiebung des Scheibentisches bewirkt wird. When the supply of immersion liquid 4.1 constant flow rate through the displaceable with the nozzle 24 sleeve 21, the reduction of the gap a by lifting the disc table causes an increase dea flow resistance and hence an increase in the force rector normal to the surface of the photoresist 26 or the ring 9, whereby a displacement of the sleeve 21, these registered by the sensor 22 and supplied to the information to an electromechanical coupler within the means for data acquisition and analysis 23, and a displacement of the disc table is effected. Vorteilhaft ist die als Meßsonde ausgebildete Hülse 21 an mehreren Öffnungen 10; the measuring probe designed as a sleeve 21 is advantageous in several openings 10; 11 vorgesehen, wobei die Anordnung vorzugsweise dreieckförmig innerhalb des Ringes 9 vorgesehen und somit eine Flächenzuordnung realisiert werden kann. 11 is provided, the assembly is preferably provided within the triangular ring 9 and thus an area allocation can be realized.

Die in der Fig. 3 dargestellte Ausgestaltung des' Immersionsobjektives weist ebenfalls eine Vorsatzeinrichtung 7 auf, die einwandig ausgeführt ist, und die zwischen dem objektivseitig letzten optischen Bauteil 2 und der verjüngten, unteren Öffnung einen Raum 4 bildet. The configuration of the 'immersion lens shown in Fig. 3 also has an attachment device 7 which is embodied single-wall and which forms a space 4 between the objective side last optical member 2 and the tapered bottom opening.

An ihrer der mit dem Fotoresist 26 beschichteten Halbleitersubstrat 25 zugewandten unteren Öffnung ist eine lichtdurchlässige Scheibe 3 in einer Fassung 3.1 vorgesehen, die dem Durchmesser des Bildfeldes entspricht, die objektivseitige öffnung weist ebenfalls einen Ring 6 sowie einen unteren und oberen Anschlag 6.1; on its side facing the surface coated with the photoresist 26 Interim semiconductor substrate 25 lower opening is provided in a version 3.1 3 a transparent disc which corresponds to the diameter of the image field, the lens-side opening also has a ring 6 as well as a lower and an upper stop 6.1; 6.2 auf. 6.2. Der an der verjüngten Seite in einer Ebene mit der lichtdurchlässigen Scheibe befindliche Ring 9.1 ist mit Bohrungen / Öffnungen 10; The ring 9.1 located at the tapered side in a plane with the light transmissive disk with holes / openings 10; 11 versehen, die jeweils auf zwei voneinander unterschiedlichen Teilkreisen um die optische Achse A angeordnet sind. 11 is provided, which are arranged respectively on two mutually different graduated circles about the optical axis A.

Die Öffnungen 10 sind abstandsweise zwei- oder mehrfach auf dem inneren Teilkreis vorgesehen und sind über Zuleitungen 17 sowie Sperreinrichtungen 28 zentral mit einer Druckausgleichs- und Speichereinrichtung verbunden. The openings 10 are apart manner twice or more provided on the inner pitch circle and are centrally connected via leads 17 and locking means 28 with a pressure equalizing and storage means. Auf dem äußeren Teilkreis sind wenigstens zwei oder mehrere Öffnungen 11 abstandsweise vorgesehen, die Ableitungen 18 mit Sperreinrichtungen 29 aufweisen, die in ihrer v/eiteren Anordnung untereinander verbunden und über eine Rohr- oder Schlauchleitung 13 einer Filter- und Thermostatiereinrichtung 8 zugeführt sind, die ausgangseitig wiederum mit dem Eingang der Druckausgleichs- oder Speichereinrichtung 14 verbunden ist. On the outer pitch circle of at least two or more openings 11 are apart manner provided the derivatives have 18 with locking means 29 which are connected in their v / Eiteren arrangement with one another and fed via a pipe or hose 13 of a filter and Thermostatiereinrichtung 8, on the output side turn is connected to the input of the pressure equalization or storage device fourteenth Bei / Vor der Inbetriebnahme der erfindungsgemäßen Vorsatzeinrichtung ist die Immersionsflüssigkeit 4.1 in den entsprechenden Speichereinrichtungen und der Spalt a für den Belichtungsabstand ist durch Absenken der Vorsatzeinrichtung 7 oder Anheben des Scheibentisches eingestellt. At / before handling the header device of the invention, the immersion liquid 4.1 in the corresponding storage means and the gap a for the exposure gap is set by lowering the attachment means 7 or lifting the disc table. In Verbindung mit der dem ersten Belichtungsschritt zugeordneten Relativbewegung des Substrattisches 16 erfolgt über die Zuführungen 17 der Zufluß der Immersionsflüssigkeit 4.1 über die Öffnungen 10 auf die Oberfläche des mit dem Resist 26 beschichteten Halbleitersubstrates 25 derart, daß der Spalt a mit einem homogenen Flüssigkeitsfilm ausgefüllt wird und bezogen auf die Relativbewegung des Substrattisches 16 vor dem Ring 9.1 ein schmaler Flüssigkeitswall 4.2 entsteht. In conjunction with the associated with the first exposure step, relative movement of the substrate table 16, the inflow of the immersion liquid 4.1, that is, the gap A with a homogenous film of liquid filled and via the supply lines 17 via the apertures 10 onto the surface of the coated with the resist 26 Interim semiconductor substrate 25 in such a way based on the relative movement of the substrate table 16 before the ring 9.1, a narrow liquid Wall arises 4.2. Nach dem Flüssigkeitsauftrag über die Zuführungen 17 sowie nach einem durchgeführten Belichtungsschritt wird mittels einer entsprechenden Steuerung der Sperreinrichtungen 28; After the liquid application on the leads 17, and after completing a step of exposure by means of a corresponding control of the locking means 28; 29; 29; 30 sowie der Druckausgleichsund Speichereinrichtung 14 die Immersionsflüssigkeit 4.1 durch die Öffnungen 11 mit den angeschlossenen Ableitungen 18 abgeführt und den nachgeschalteten Vorrichtungen zur Reinigung, Temperierung und Speicherung 8; 30 as well as the pressure compensating and storage device 14, the immersion liquid 4.1 discharged through the openings 11 with the connected discharge lines 18 and the downstream devices for cleaning, tempering and storage 8; 14 zugeleitet. 14 supplied.

In der Fig. 2 ist das Blockschaltbild eines Belichtungs Vorganges dargestellt. In FIG. 2 is a block diagram of an exposure operation is shown.

Die Halbleitersubstratbelichtung erfolgt gemäß eines vorgegebenen Ablaufprogrammes derart, daß ein Halbleitersubstrat mit einem Hetzmittel vorbehandelt in die Belichtungseinrichtung gegeben und auf dem Substrattisch nach einem Vorjustierprozeß befestigt wird. The semiconductor substrate exposure is performed in accordance with a predetermined sequence program such that a semiconductor substrate having a pretreated Hetzmittel in the exposure means thereto and is mounted on the substrate table according to one Vorjustierprozeß.

Es besteht auch die Möglichkeit, das Netzmittel nach dem Vorjustier— oder Spannprozeß unmittelbar in der Belichtungseinrichtung aufzutragen. It is also possible to apply the wetting agent after the clamping process Vorjustier- or directly into the exposure apparatus.

Anschließend daran erfolgt der Transport des Substrattisches mit dem Halbleitersubstrat unter das mit der Vorsatzeinrichtung ausgestattete Objektiv und die Vorsatzeinrichtung wird bis auf den Be licht ungs abstand abgesenkt. Following this, the transportation of the substrate table with the semiconductor substrate under the equipped with the intent facility lens and the facing device takes place until the light Be ungs lowered distance. Durch die Zufuhr thermostatierter Immersionsflüssigkeit durch die entsprechenden Öffnungen bei kreisförmiger Bewegung des Substrattisches erfolgt die Ausbildung eines stabilen Immersionsflüssigkeitsfilmes zwischen Fotoresist bzw. dem netzmittel und der Unterkante der lichtdurchlässigen Scheibe bzw. dem Ring an der Vorsatz einrichtung. By supplying thermostatierter immersion liquid through the corresponding openings in a circular motion of the substrate table, the formation of a stable immersion liquid film between the photoresist and the wetting agent and the lower edge of the transparent plate or the ring takes place device at the header.

Im folgenden Schritt wird die erste Belichtungsposition angefahren, während weitere Immersionsflüssigkeit zugeführt wird, das Halbleitersubstrat wird positioniert und der erste Belichtungsschritt erfolgt. In the following step, the first exposure position is approached, while further immersion liquid is supplied to the semiconductor substrate is positioned, and the first exposure step. Die weitere Belichtungsfolge v/ird analog der Brstbelichtung bis zur vollständigen Halbleitersubstratbelichtung durchgeführt und die Zufuhr von Immersionsflüssigkeit gesperrt. The further exposure sequence v / ill be carried out analogously to Brstbelichtung until complete semiconductor substrate exposure and locked, the supply of immersion liquid.

Im anschließenden Schritt wird die auf dem Halbleiter-, substrat befindliche Immersionsflüssigkeit durch kreisförmige Bewegung des Substrattisches abgesaugt, und die Vorsatzeinrichtung angehoben, so daß abschliessend der Substratwechsel erfolgen und die V/eiterbearbeitung von Folgesubstraten durchgeführt werden kann. In the subsequent step, the immersion liquid on the semiconductor, substrate located is sucked by circular movement of the substrate table and the attachment means raised so that take place Finally, the substrate exchange, and the V / pus-processing can be carried out by sequence substrates.

Die Vorteile des erfindungsgemäßen Immersionsobjektivs ergeben sich insbesondere dadurch, daß durch den konstanten Durchfluß von Immersionsflüssigkeit sowohl zwischen der Vorsatzeinrichtung und dem Fotoresist auf dem Halbleitersubstrat als auch zwischen dem objektivseitig letzten optischen Bauelement und der f lichtdurchlässigen Scheibe keine Staubpartikel-, Luft- oder Gasblaseneinschlüsse den Belichtungsprozeß negativ beeinflussen. The advantages of the immersion objective of the present invention will become apparent in particular in that through the constant flow of immersion fluid both between the attachment device and the photoresist on the semiconductor substrate as well as between the objective side last optical component and the f transparent pane no levels of particulates, air or gas bubble inclusions the exposure process influence negatively. Die Anordnung der Immersionsschicht gemäß der erfinderischen lösung erlaubt es weiterhin, hohe Relativbewegungen des Substrattisches auszuführen, ohne daß das Halbleitersubstrat außerhalb des Belichtungsfeldes verunreinigt wird, desgleichen ist eine Rückseitenverschmutzung ausgeschlossen, die bei den bekannten Lösungen zu einer hohen Nacharbeit führt. The arrangement of the immersion layer of the inventive solution further allows to perform high relative movements of the substrate table without the semiconductor substrate is contaminated outside of the exposure field, likewise a backside contamination is excluded, resulting in the known solutions in high reworking. Des weiteren ist die Benetzung der Substrataufnahme und des unmittelbaren Substrattischbereiches weitestgehend ausgeschlossen. Furthermore, the wetting of the substrate support and the substrate table immediate area is largely excluded. Die Behandlung der Resistoberfläche mit einem Netzmittel ermöglicht dabei eine annähernd restlose Beseitigung von Immersionsflüssigkeit, womit der für folgende Bearbeitungsschritte erforderliche Reinigungsaufwand stark reduziert werden kann. The treatment of the resist surface with a wetting agent thereby allows a nearly complete removal of the immersion liquid, whereby the space required for the following processing steps cleaning effort can be greatly reduced.

Claims (15)

  1. -47- -47-
    Erfindungsanspruch invention claim
    1. Immersionsobjektiv für die Projektionsabbildung einer Maskenstruktur auf Halbleitersubstrate für fotolithografische Verfahren zur Herstellung integrierter Halbleiterschaltungen, das in einer zwischen dem Objektiv und dem Halbleitersubstrat angeordneten Vorsatζeinrichtung eine gesteuert zugeführte, dem Brechungsindex des Fotoresists entsprechende Flüssigkeit aufweist, gekennzeichnet dadurch, daß am Objektiv (1) ein erstes Immersionssystem vorgesehen ist, wobei die am Objektiv (1) angeordnete Vorsat ζeinrichtung (7) an ihrer dem Substrat zugewandten verjüngten Öffnung mittels einer lichtdurchlässigen Scheibe (3) mediendicht verschlossen ist und daß der zwischen dem letzten optischen Bauteil (2) und der lichtdurchlässigen Scheibe (3) vorhandene Hohlraum (4) mit einer Immersionsflüssigkeit (4.1) raumfüllend versehen ist und daß weiterhin ein zweites Immersionssystem vorgesehen ist, bei dem an der Vorsat ζeinrichtung (7) parallel zur Oberfläche des Substrates (25) ein Ri 1. immersion lens for the projection imaging of a mask pattern on semiconductor substrates for photolithography process for fabricating semiconductor integrated circuits having a controlled fed, corresponding to the refractive index of the photoresist liquid in an arranged between the lens and the semiconductor substrate Vorsatζeinrichtung, characterized in that the lens (1) a first immersion system is provided, arranged to the lens (1) Vorsat ζeinrichtung (7) on its side facing the substrate tapered opening by means of a transparent pane (3) media-tight and that between the last optical component (2) and the light-transmitting disc (3) is provided existing cavity (4) with an immersion liquid (4.1) a space-filling, and that further comprises a second immersion system is provided in which ζeinrichtung at the Vorsat (7) parallel to the surface of the substrate (25) Ri ng (9) mit dem Gehäuse (7.1) der lichtdurchlässigen Scheibe (3) verbunden ist, in dem in Substratbewegungsrichtung gesehen, abstandsweise wenigstens eine Öffnung (1 θ) vor und wenigstens eine Öffnung (11) nach dem Objektiv (1) angeordnet ist, die über Schlauch- oder Rohrleitungen (12; ng (9) is connected to the housing (7.1) of the light transmitting plate (3), in which as seen in the substrate direction of motion, distance, at least one opening (1 θ) before and at least one opening (11) of the lens (1) is arranged, via hoses or pipes (12; 13) mit darin installierten Sperreinrichtungen (15) sowie Filter— und Thermostatiereinrichtung en (s) mit Zufuhr- und Druckausgleichseinrichtungen (14) verbunden sind und als geschlossenes System gebildet ist. 13) installed therein with locking means (15) and filtering and Thermostatiereinrichtung ene (s) with feed and pressure equalization means (14) are connected, and is formed as a closed system.
    -AZ- -AZ-
  2. 2. Immersionsobjektiv gemäß Punkt 1, gekennzeichnet dadurch, daß an der.Vorsatzeinrichtung (7) einerseits Zuleitungen (17) für die Immersionsfliissigkeit (4.1) vorgesehen sind, in denen Einrichtungen zur Druckreduzierung (5) und Sperreinrichtungen (15) enthalten sind, daß weiterhin Behältnisse als Speicher- und Druckausgleichseinrichtungen (14) für die Immersionsflüssigkeit (4.1) zugeordnet und daß andererseits wenigstens eine Ableitung (18) mit Filter- und Thermost atiereinrichtungen (8) angeordnet sind, die mit dem Anschluß (14»1) der Zuführ- und Druckausgleichvorrichtung (14) ein geschlossenes System bilden. 2. immersion objective according to item 1, characterized in that on the one hand leads (17) for the Immersionsfliissigkeit (4.1) are provided at der.Vorsatzeinrichtung (7) in which means for reducing the pressure (5) and locking means (15) are contained, in that furthermore containers as a storage and pressure equalization means (14) associated with the immersion liquid (4.1) and on the other hand at least one discharge line (18) with filter and Thermost atiereinrichtungen (8) are arranged with the terminal (14 '1) of the feeding and pressure-equalizing device (14) form a closed system.
  3. 3. Immersionsobjektiv gemäß Punkt 2, gekennzeichnet dadurch, daß vor der Austrittsöffnung der Zuleitung (17) Prallbleche (19) angeordnet sind. 3. immersion objective according to item 2, characterized in that before the outlet opening of the supply line (17) baffles (19) are arranged.
  4. 4. Immersionsobjektiv gemäß den Punkten 1 bis 3, gekennzeichnet dadurch, daß ein Ring (6) der Vorsat ze inrichtung (7) am Objektiv (1) gegen Anschläge (6.1; 6.2) höhenverstellbar ist. 4. immersion lens according to items 1 to 3, characterized in that a ring (6) ze the Vorsat inrichtung (7) on the lens (1) against stops (6.1; 6.2) is adjustable in height.
  5. 5. Immersionsobjektiv gemäß Punkt 1, gekennzeichnet dadurch, daß die lichtdurchlässige Scheibe (3) aus einer planparallelen Glasplatte oder einer plankonvexen Linse niedriger jörechkraft besteht. 5. immersion objective according to item 1, characterized in that the transparent plate (3) consists of a plane-parallel glass plate or a plano-convex lens is lower jörechkraft.
  6. 6. Immersionsobjektiv gemäß der Punkte 1 und 5, gekennzeichnet dadurch, daß die lichtdurchlässige Scheibe (3) aus einer Folie mit einer dem Fotoresist (26) angepaßten Brechzahl besteht. 6. immersion lens according to the points 1 and 5, characterized in that the transparent plate (3) consists of a film having a the photoresist (26) matched refractive index.
  7. 7. Immersionsobjektiv gemäß der Punkte 1, 5 und 6, gekennzeichnet dadurch, daß die Folie eine Dicke 7. immersion lens according to the points 1, 5 and 6, characterized in that the film has a thickness
    - 49- - 49-
    zwischen 0,5 und 100 /um aufweist, daß die Folie und die planparallele Glasplatte an der dem Objektiv (1) zugewandten Seite für die zur Strukturübertragung, Uberdeckungspositionierung und / oder Fokussirung benutzten Wellenlängen des eingesetzten Lichtes entspiegelt sind und eine der auf dem Halbleitersubstrat (25) befindlichen Immersionsflüssigkeit (4.i) angepaßte Brechzahl aufweisen. / Um comprises between 0.5 and 100, that the sheet and the plane-parallel glass plate on the lens (1) facing side for the used for pattern transfer, Uber cover positioning and / or Fokussirung wavelengths of light used are non-reflective and one of (on the semiconductor substrate immersion liquid (4.i) located 25) have matched refractive index.
  8. 8. Immersionsobjektiv gemäß Punkt 6 und 7, gekennzeichnet dadurch, daß die Folie aus Nitrozellulose, Polychinoxalin oder Polycarbonat besteht. 8. immersion objective according to item 6 and 7, characterized in that the film of nitrocellulose, polyquinoxaline or polycarbonate.
  9. 9. Immersionsobjektiv gemäß der Punkte 1 u.5 bis 8, gekennzeichnet dadurch, daß die lichtdurchlässige Scheibe (3) in einem Bereich von 5 /um bis 5 mm über dem Halbleitersubstrat (25) angeordnet ist. 9. immersion lens according to the points 1 u.5 to 8, characterized in that the transparent plate (3) in a range of 5 / um is disposed to 5 mm above the semiconductor substrate (25).
  10. 10. Immersionsobjektiv gemäß Punkt 1, gekennzeichnet dadurch, daß 'die Öffnung (10) der Zuleitung (17) eine Führung (20) aufweist, in der vertikal beweglich eine Hülse (21) mit einer Düse (24) angeordnet ist, wobei an der Hülse (21) oberhalb des Ringes (9) ein als Abstandsmeßeinrichtung ausgebildeter Sensor (22) sowie weiterhin außerhalb , des Immersionsobjektives Mittel zur Meßwerterfassung und -auswertung (23) vorgesehen sind. 10. immersion objective according to item 1, characterized in that 'the opening (10) of the feed line (17) has a guide (20) is arranged in vertically movable, a sleeve (21) having a nozzle (24), at the sleeve (21) above the ring (9) designed as a distance measuring sensor (22) and continue outside the immersion objective means for data acquisition and analysis (23) are provided.
  11. 11. Immersionsobjektiv gemäß Punkt 1, gekennzeichnet dadurch, daß das zweite Immersionssystem mit der Immersionsflüssigkeit (4.1) versehen ist. 11. immersion objective according to item 1, characterized in that the second immersion system with the immersion liquid (4.1) is provided.
  12. 12. Immersionsobjektiv gemäß der Punkte 1 bis 11, gekennzeichnet dadurch, daß die Oberfläche des auf dem Halbleitersubstrates (25) aufgebrachten 12. immersion objective according to points 1 to 11, characterized in that the surface of the on the semiconductor substrate (25) applied
    - -20- - -20-
    Fotoresists (26) mit einem Medium geringer Oberflächenspannung, beispielsweise mit Netzmittel (27),vorbehandelt ist. is photoresist (26) pretreated with a medium of low surface tension, for example with wetting agent (27).
  13. 13. Immersionsobjektiv gemäß der Punkte 1 bis 12, gekennzeichnet dadurch, daß die Immersionsflüssigkeit (4.1) einen vorgegebenen Temperaturbereich aufweist. 13. immersion objective according to points 1 to 12, characterized in that the immersion liquid (4.1) has a predetermined temperature range.
  14. 14. Immersionsobjektiv gemäß Punkt 13, gekennzeichnet dadurch, daß die Temperatur der Immersionsflüssigkeit (4.1) 22 i 1° G beträgt. 14. immersion objective according to item 13, characterized in that the temperature of the immersion liquid (4.1) is 22 i 1 ° G.
  15. 15. Immersionsobjektiv gemäß der Punkte 1 bis 14, gekennzeichnet dadurch, daß als Strahlenquelle für die Strukturübertragung ultraviolettes Licht eingesetzt ist, deren Wellenlänge im Spektralbereich von 2oo bis 45o hm liegt. 15. immersion objective according to points 1 to 14, characterized in that ultraviolet light is used as radiation source for the pattern transfer, the wavelength in the spectral range from 2oo to 45o is hm. '. '.
    - Hierzu siehe 3 Blatt Zeichnungen - - this see 3 sheets drawings -
DD25480683A 1983-09-14 1983-09-14 Immersion objective for stepwise projection imaging of a mask pattern DD221563A1 (en)

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Application Number Priority Date Filing Date Title
DD25480683A DD221563A1 (en) 1983-09-14 1983-09-14 Immersion objective for stepwise projection imaging of a mask pattern

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