DD206607A1 - A method and device for eliminating interference effects - Google Patents

A method and device for eliminating interference effects Download PDF

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Publication number
DD206607A1
DD206607A1 DD24078682A DD24078682A DD206607A1 DD 206607 A1 DD206607 A1 DD 206607A1 DD 24078682 A DD24078682 A DD 24078682A DD 24078682 A DD24078682 A DD 24078682A DD 206607 A1 DD206607 A1 DD 206607A1
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exposure
liquid
layer
characterized
device
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DD24078682A
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German (de)
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Peter Westphal
Rainer Pforr
Christian Beyer
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Mikroelektronik Zt Forsch Tech
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Abstract

DIE ERFINDUNG BETRIFFT EIN VERFAHREN UND EINE VORRICHTUNG ZUR BESEITIGUNG VON INTERFERENZEFFEKTEN BEI DER HERSTELLUNG VON INTEGRIERTEN HALBLEITERSCHALTUNGEN AUF FOTORESISTSCHICHTEN MITTELS MONOCHROMATISCHEN LICHTES, WOBEI WAEHREND DER BELICHTUNG EINE LICHTDURCHLAESSIGE HILFSSCHICHT, BESTEHEND AUS EINER FLUESSIGKEIT ODER KLARLACKSCHICHT MIT EINEM DER BELICHTUNGSWELLENLAENGE LAMDA UNTEN S ANGEPASSTEN BERECHNUNGSINDEX, EINGESETZT WIRD, DIE NACH DER BELICHTUNG ENTFERNT WIRD. THE INVENTION RELATES TO A METHOD AND A DEVICE FOR REMOVING INTERFERENCE EFFECTS IN THE PRODUCTION OF INTEGRATED SEMICONDUCTOR CIRCUITS ON PHOTO RESIST LAYERS BY monochromatic light, WITH DURING THE EXPOSURE A translucent AUXILIARY LAYER COMPRISING A LIQUID OR clear coat WITH THE BELICHTUNGSWELLENLAENGE LAMDA DOWN S ADJUSTED CALCULATION INDEX IS USED AFTER THE EXPOSURE IS REMOVED. DIE DICKE DER SCHICHT BETRAEGT ERFINDUNGSGEMAESS D > PROPORTIONAL LAMBA HOCH 2 DURCH 2N HOCH 2 DELTA LAMBA MITTELS EINER ZUGEHOERIGEN VORRICHTUNG WIRD DIE FLUESSIGKEIT VON EINEM VORRATSGEFAESS DIREKT DEM OBJEKTIV SO ZUGEFUERHT, DASS SIE ZWISCHEN DER UNTERKANTE DER VORRICHTUNG UND DER RESISTOBERFLAECHE EIN GESCHLOSSENES SYSTEM BILDET. THE THICKNESS OF THE LAYER SHALL ERFINDUNGSGEMAESS D> PROPORTIONAL LAMBA HIGH 2 BY 2N HIGH 2 DELTA LAMBA means of an associated DEVICE IS THE LIQUID FROM A VORRATSGEFAESS DIRECT THE LENS SO ZUGEFUERHT THAT YOU BETWEEN THE LOWER EDGE OF THE DEVICE AND THE RESISTOBERFLAECHE ON CLOSED SYSTEM MAKES. DAS ANWENDUNGSGEBIET ERSTRECKT SICH VORZUGSWEISE AUF DAS GEBIET DER MIKROLITHOGRAFIE. THE APPLICATION DOES PREFERABLY ON THE TERRITORY OF THE MICRO LITHOGRAPHY.

Description

-«- 240786 S - "- 240786 S

Verfahren und Vorrichtung zur Beseitigung von Interferenzeffekten Method and apparatus for eliminating interference effects

Anwendungsgebiet der Erfindung Field of the Invention

Die Erfindung betrifft ein Verfahren und eine Vorrichtung zur Beseitigung von Interferenzeffekten bei . The invention relates in a method and a device for eliminating interference effects. der monochromatischen, dioptrischen Projektionsabbildung sowie der Justierung von Maskenstrukturen auf mit Fotoresist beschichteten Halbleiterscheiben zur Herstellung von integrierten Halbleiterschaltungen· the monochromatic dioptric projection imaging as well as the adjustment of mask structures onto coated with photoresist wafers for the production of semiconductor integrated circuits ·

Charakteristik der bekannten technischen Lösungen Characteristic of the known technical solutions

Zur Übertragung von Maskenstrukturen auf Halbleiterscheiben für die Herstellung von integrierten Halbleiterschaltungen werden in zunehmendem Maße optische Projektionsverfahren eingesetzt. For the transmission of mask patterns on semiconductor wafers for the manufacture of semiconductor integrated circuits increasingly optical projection methods can be used. Mittels dieser Verfahren wird das Bild einer Maske mit Hilfe eines optischen Projektionesystems erzeugt, das höchste Anforderungen an das Auflösungsvermögen, an die Bildfeldgröße, an die Eonstanz des Abbildungsmaßstabes und an andere Abbildungsparameter stellt· Diese Anforderungen sind von refraktiven Optiken nur bei monochromatischer Abbildung zu erfüllen. By means of this method, the image of a mask using an optical Projektionesystems is generated that meets the highest demands on the resolution, to the image field size, the Eonstanz of the imaging scale and other imaging parameters sheet · These requirements are fulfilled by refractive optics only for monochromatic image. Wegen der geringen Bandbreite des zur Abbildung eingesetzten Lichtes treten starke Interferenzeffekte in der Fotoresistschicht der Halbleiter- Because of the low bandwidth of the light used for imaging strong interference effects occur in the photoresist layer of the semiconductor

-BP*" -BP * "

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scheibe auf« Diese Erscheinung ist darauf zurückzuführen, daS die Dicke der Fotoresistschicht gegenüber der Kohärenzlänge des eingesetzten monochromatischen Lichtes klein ist. disk-on "This phenomenon is due to tHe the thickness of the photoresist layer to the coherence length of the monochromatic light used is small. Diese genannten Interferenzeffekte beeinflussen die Qualität der Abbildung der Resiststrukturen sowie die Justierung der Masken zu bereits auf der Halbleiteroberfläche befindlichen Strukturen bei Folgebelichtungen negativ· Insbesondere tritt dieser Nachteil bei der schrittweisen Belichtung (1 : x) auf, wobei auf einer Halbleiterscheibe zur Strukturierung der Gesamtfläche mehrmals justiert und belichtet werden muß. These mentioned interference effects influence the quality of the image of the resist structures as well as the adjustment of the masks already on the semiconductor surface structures in subsequent exposures negative · In particular, this disadvantage occurs in the gradual exposure (1: x), where several times on a semiconductor wafer to pattern the total must be adjusted and exposed.

Zur Reduzierung der die Abbildung störenden Interferenzeffekte werden auch Belichtungseinrichtungen mit bichromatischer Abbildung der Strukturen eingesetzt· Bei diesen Belichtungsverfahren tritt der Nachteil auf, daß die Korrektur für zwei oder mehrere Wellenlängen des verwendeten Lichtes zu Lasten anderer Bildfehlerkorrekturen geht, so daß diese Systeme nicht das Auflösungsvermögen und die Bildfeldgröße monochromatischer Systeme erreichenβ To reduce the picture disturbing interference effects and exposure devices with bichromatic mapping of the structures are used · In this exposure method is the disadvantage that the correction for two or more wavelengths of light used at the expense of other image error corrections, so that these systems are not the resolution and the image field size monochromatic systems erreichenβ

Desweiteren sind Belichtungseinrichtungen bekannt, bei denen Spiegelsysteme für polychromatische Abbildung eingesetzt werden. Furthermore, exposure devices are known in which mirror systems for polychromatic imaging are used. Die Abbildungsleistung derartiger Systeme ist jedoch infolge ihrer begrenzten Apertur und des sehr kleinen Bildfeldes nicht mit monochromatischen Abbildungsverfahren vergleichbar, da nur eine Abbildung im Verhältnis von 1 : 1 möglich ist. However, the imaging performance of such systems is not comparable with monochromatic imaging method due to their limited aperture and the very small field of view, as only one image in the ratio of 1: 1 is possible.

In der OS 29 11 503 ist ein Verfahren zur Herstellung von Strukturen beschrieben, bei dem eine Entspiegelung der auf der Halbleiterscheibenoberfläche aufgebrachten Fotoresistschicht durch das Auftragen mindestens einer In the OS 29 11 503, a process for the preparation of structures is described in which an anti-reflection coating the coating applied to the semiconductor wafer surface of the photoresist layer by applying at least one

Z4Q786 8 Z4Q786 8

weiteren, dünnen Schicht eines Stoffes mit dem Fotoresist angepaßtem Brechungsindez erreicht werden soll. further, thin layer of a substance with the photoresist matched Brechungsindez to be achieved. Die Dicke der Zusatzschicht wird bei diesem Verfahren 1 der Belichtungswellenlänge /$, ausgeführt und die Zusatzschicht wird vor dem Belichtungsvorgang auf den Resist aufgetragen· The thickness of the additional layer in this method, the exposure wavelength of 1 / $ executed and the additional layer is applied to the resist prior to the exposure operation ·

Desweiteren ist in einer Variante die Anwendung der Zusatzschicht unter der Fotoresistschicht vorgesehen, welche in dem nach dem Belichtungsprozeß folgenden Entwicklungsvorgang mit entfernt wird. Furthermore, in a variant, the application of the additional layer is provided under the photoresist layer which is also removed in the after exposure process following developing process. Sie Nachteile dieser Lösung bestehen darin, daß die Interferenzeffekte nur bei einer bzw. einem ganzzahligen Vielfachen der eingesetzten Wellenlänge unterdrückt werden und das Verfahren demzufolge nicht gleichzeitig für den Justier- und Belichtungsvorgang einsetzbar ist, da dieselben unterschiedliche Wellenlängen aufweisen. They disadvantages of this solution are that the interference effects are suppressed only in one or an integer multiple of the wavelength used and thus the method is not used for the adjustment and exposure operation at the same time as having the same different wavelengths. Weiterhin ist die aufgebrachte Hilfsschicht an bereits auf dem Substrat vorhandenen Stufen von itzstrukturen nicht wirksam, da die Schichtdickenänderung Λ beträgt Furthermore, the applied auxiliary layer is not effective to existing on the substrate stage of itzstrukturen, since the layer thickness change is Λ

und die Stufen und somit die Schicht zur Einfallsrichtung der Lichtwellen geneigt sind· Die Schicht wirkt nur, je kleiner der Neigungswinkel oC der Böschung zur Normalen, im Idealfall also mit der Normalen identisch, oder wenn dg s &Q sin cC ist ( dg s Schichtdicke auf der Böschung, d Q ss Schichtdicke auf der ebenen Fläche) · Bin weiterer Nachteil ergibt sich daraus, daß diese Hilfeschicht exakt gleichmäßig auf der Resist- oder Substratoberfläche verteilt werden muß und daher technologisch schwer beherrschbar und aufwendig ist· and the steps, and thus the layer to the incident direction of the light waves are inclined · The layer acts only, the smaller the inclination angle oC of the slope to the normal, in the ideal case, therefore, with the normal to the same, or if dg s & Q sin cC is (dg s layer thickness the slope, d Q ss layer thickness on the flat surface) · Am further disadvantage arises from the fact that this support layer must be distributed precisely uniformly on the resist or the substrate surface and therefore technologically difficult to control and expensive is ·

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Ziel des Erfindung The aim of the invention

Das Siel der Erfindung besteht darin, die bei der Belichtung der auf einer Halbleiterscheibe aufgebrachten Resistschichten durch von der Halbleiterscheibenober«- fläche reflektierte Lichtwellen auftretenden Interferenzerscheinungen auszuschließen· The sluice of the invention is that upon exposure of the applied on a semiconductor wafer by resist layers of the semiconductor wafer upper "- to exclude interference phenomena occurring surface reflected light waves ·

Aufgabe der Erfindung OBJECT OF THE INVENTION

Di© Aufgabe der Erfindung besteht darin, ein Verfahren sowie eine Vorrichtung zu entwickeln die es ermöglichen, die störenden Interferenzeffekte bei monochromatischer Abbildung von Maskenstrukturen auf mit einer Fotoresistschicht versehenen Halbleiterscheiben sowie bei Justiervorgängen auszuschließen· Di © object of the invention is to develop a method and a device which make it possible to exclude the interfering effects of interference in monochromatic imaging of mask patterns on a photoresist layer semiconductor wafers, as well as provided with adjustment operations ·

Merkmale der Erfindung Features of the invention

Erfindungsgemäß wird die Aufgabe d a durch gelöst, daß die auf der Halbleiterscheibe aufgebrachte Fotoresistschicht vor der Belichtung au jedem einzelnen Prozeßschritt mit einer den Fotoresist nicht beeinflussenden Hilfsschicht gleichen Brechungsindex 9 bedeckt wird, die während der Belichtung auf der Besistschicht verbleibt und anschließend sowie vor dem Entwickeln der Resistschicht entfernt wird» Die Dicke der Hilfsschicht wird erfindungsgemäß so groß gewählt, daß die Kohärenzlänge I s Λ kleiner als die According to the invention, the object d a through is achieved that the force applied to the semiconductor wafer photo-resist layer before exposure au each process step with a the photoresist does not influence the auxiliary layer of the same refractive index 9 is covered, which remains during the exposure on the Besistschicht and subsequently and prior to development the resist layer is removed "the thickness of the auxiliary layer is selected according to the invention such that the coherence length I s Λ less than the

1 2 1 2

doppelte Gesamtdicke d wird, wobei Λ die Wellenlänge, η der Brechungsindex der Hilf sschicht und δΧ die Bandbreite des Lichtes in der Justier- und Belichtungseinrichtung ist« double total thickness is d, where Λ is the wavelength, the refractive index of the auxiliary η slayer and δΧ the bandwidth of the light in the aligner means being "

Als die Besistschicht bedeckende Flüssigkeit kann gemäß der erfindungsgemäßen Lösung Immersionsöl, Benzol, Tetra- When the Besistschicht covering liquid, according to the inventive solution, immersion oil, benzene, tetra

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chloräthylen, Tetrachlorkohlenstoff, Toluol, Xylol, Trichlorethylen oder Pyridin verwendet werden. chloroethylene, carbon tetrachloride, toluene, xylene, trichlorethylene or pyridine. In einer Aasgestaltung der Erfindung wird eine an der Belichtungsoptik vorgesehene Vorsatzeinrichtung soweit abgesenkt 9 daß ihre untere öffnung die Fotoresistoberfläche berührt und somit ein geschlossenes System entsteht· Bs ist möglich, die Hilfsschicht während des Belichtungsprozesses konstant auf der Resistoberfläche zu belassen oder mittels einer Zusatzeinrichtung druckgesteuert zu- und abzuführen· Als Bedingung dazu gilt, daß die Hilfsschicht nicht von der Unterkante der Vorsatzeinrichtung abreißt· In a Aasgestaltung the invention, provided on the exposure optics attachment means is lowered 9 that its lower opening in contact with the photoresist surface, and thus a closed system is created · Bs is possible to constantly keep the auxiliary layer during the exposure process on the resist surface or pressure-controlled by means of an auxiliary device to - and pay · As a condition to the proviso that the auxiliary layer does not break away from the bottom edge of the attachment device ·

Bei der erfindungsgemäßen Vorrichtung zur Beseitigung von Interferenzeffekten weist das Objektiv eine demselben angepaßte, an diesemverstellbar angeordnete und als Vorsatzobjektiv ausgebildete Hülse auf, die im unterem, der Halbleiterscheibe zugewandten Bereich, bis auf den zu übertragenden Bildfeldausschnitt verjüngt ist· Desweiteren sind mittel zur Zuführung und Halterung der Hilfsschicht vorgesehen, die mit einem Vorratsbehälter mit einer Dosiereinrichtung verbunden sind. In the inventive apparatus for eliminating interference effects, the lens has a same adapted, arranged on that adjustable and formed as a conversion lens sleeve which faces the bottom, of the semiconductor wafer region, except for the image to be transmitted field segment is tapered · Furthermore, means are provided for supplying and mounting the auxiliary layer is provided, which are connected to a storage tank with a metering device.

Die Wirkungsweise des Vorsatzobjektes beruht darauf, daß die Hilfeschicht aus dem Vorratsbehälter der verstellbaren Hülse zugeführt wird, diese ausfüllt und bei abgesenkten Zustand mit der auf der Halbleiterscheibe befindlichen Fotoresistschicht verbunden wird· Im Belichtungsprozeß ist dadurch eine Reflexion der Belichtungsstrahlen ausgeschlossen· The mode of action of the attachment object based on the fact that the assistance layer is fed from the reservoir of the adjustable sleeve, fills them and is connected at the lowered position with the located on the semiconductor wafer photoresist layer · In the exposure process by a reflection of the exposure beams is excluded ·

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Di® Erfindung wird anhand eines Ausführungsbeispieles und zweier Zeichnungen näher erläutert» Dabei, zeigen5 j DI® invention is explained in detail with reference to an embodiment and two drawings "In this case, j zeigen5

Fig· i die Oberfläche eines Substrates mit aufgebrachter Fotoresistschicht und darüberliegender Hilfsschicht, bestehend aus einer Flüssigkeit- oder Klarlackschicht mit einem dem Fotoresist gleichen Brechungsindex 9 FIG · i the surface of a substrate with applied photoresist layer and overlying auxiliary layer consisting of a liquid or a clear coat layer having a refractive index equal to the photoresist 9

Fig· 2 eine Vorrichtung zur Durchführung des Verfahrens. Figure 2 · a device for carrying out the method.

Zur Durchführung des Verfahrens wird eine mit einer Foto resistschicht 2 versehene Halbleiterscheibenoberfläche 3 mit einer Flüssigkeits- oder Klarlackschicht als Hilfsschicht 1 versehen, die den gleichen Brechungsindex aufweist wie die Fotoresistschicht 2· Die Dicke der Hilfsschicht 1 wird dabei so groß gewählt, daß sie für die längste interessierende Wellenlänge Λ bei einer Bandbreite AA ausreichend ist, vorzugsweise wird sie mit einer Dicke von d-^j^—-, ausgeführt· Es ist auch mpgl^c^ die Dicke der Hilfsschicht so groß auf die Halbleiter^ scheibenoberfläche bzw· auf die Fotoreeistschicht 2 aufzutragen, daß sie den Raum zwischen der Oberfläche des Resists 3 und der Unterkante des Objektivs 5 ausfüllt, ohne daß bei der Scheiben- oder Objektivbewegung in horizontaler Richtung der Hilf sschichtf ilm an seiner Ober fläche abreißt· Für die Anwendung der letzteren Methode ist erfindungsgemäß ein Vorsatz 4 für das Objektiv 5 vorgesehen, welcher dasselbe verschie For performing the method a with a photoresist layer 2 provided semiconductor wafer surface 3 with a liquid or clear coating layer as an auxiliary layer 1 is provided which has the same refractive index as the photoresist layer 2 · The thickness of the auxiliary layer 1 is in this case selected so large that it for longest wavelength of interest Λ at a bandwidth AA is sufficient, but preferably is of a thickness of d- ^ j ^ -, executed · It is also mpgl ^ c ^, the thickness of the auxiliary layer as large ^ on the semiconductor wafer surface or · to the applying Fotoreeistschicht 2 that it fills the space between the surface of the resist 3 and the lower edge of the lens 5 without that in the disk or lens movement in the horizontal direction of the auxiliary sschichtf ilm torn off at its upper surface · For the application of the latter method is provided according to the invention an attachment 4 for the lens 5, which is the same various bbar umschließt und bis auf die Halbleiterscheibenoberfläche 3 absenkbar ist· .... bbar surrounds and up to the wafer surface 3 is lowered · ....

Der Innenraum des Vorsatzes 4 ist mit einer in der Erfindung bezeichneten Flüssigkeit 1 zwischen der Halb- The interior of the header 4 is provided with a referred to in the invention, liquid 1 between the half-

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leiterscheiben- bzw. Kesistoberfläche 3» 2 und einem mit einer Dosiereinrichtung 7 verbundenen Einlauf gefüllt, oder steht mit dem letzten, unteren optischen Mittel des Objektives in Wirkungsverbindung,ohne daß ein Luftspalt zwischen der Hilfsschichtoberfläche 1 und dem optischen Mittel vorhanden ist. leiterscheiben- or Kesistoberfläche 3 »2 and connected to a metering device 7 inlet filled, or is the last, lower optical center of the lens in operative connection, without an air gap between the auxiliary layer surface 1 and the optical agent is present. Durch die dosierte Zufuhr der Hilfsschicht 1 ist ein Pegel auf dem zu justierenden und zu belichtenden Gebiet der Halbleiterscheibe 3 vorhanden, der während des anschließenden Justier- und Belichtungsvorganges die störenden Interferenzerscheinungen in einem breiten Spektralbereich ausschließt· By the metered supply of the auxiliary layer 1, a level is to be adjusted on and available to be exposed area of ​​the semiconductor wafer 3, the disturbing interference phenomena excludes in a wide spectral range during the subsequent alignment and exposure process ·

Nach der Belichtung wird die Hilfsschicht 1 abgespült oder abgeschleudert und die Fotoresistschicht 2 wird wie bekannt entwickelt· "* '"' After exposure, the auxiliary layer is washed or thrown off one and the photoresist layer 2 is developed as known · "* '' '

Die Vorteile der erfindungsgemäßen Lösung sind insbesondere darin begründet, daß die Hilfsschicht 1 auch an Stufen oder bereits vorhandenen Ätzgräben und Strukturen auf der Halbleiterscheibenoberfläche 3 auftretende Interferenzerscheinungen «eitestgehend vermeidet· Daraus resultieren eine Verringerung der Maßabweichung an den Stufen sowie eine Verringerung der Justierfehler . The advantages of the inventive solution are in particular due to the fact that the auxiliary layer 1 also stages or existing etching trenches and structures on the wafer surface 3 occurring interference phenomena "eitestgehend avoids · This results in a reduction in the size error on the steps and a reduction of alignment errors.

Durch die Vergrößerung der bildseitigen Apertur um den Faktor η wird gleichzeitig bei entsprechend korrigiertem Objektiv die Auflösung um den Faktor η erhöht bzw· die minimale nutzbare Strukturbreite um den Faktor 1 verkleinert. the resolution by a factor of the minimum usable structure width is η by the magnification of the image-side aperture by a factor at the same time with appropriately corrected lens or η increases · reduced by a factor. 1

Claims (1)

  1. Erfindungsanspruch invention claim
    1· Verfahren zur Beseitigung von Interferenzeffekten bei der Herstellung von integrierten Halbleiterschaltungen auf Fotoresistschichten mittels monochromatischem Licht, wobei zur Verringerung des Effektes der unterschiedlichen Intensitätseinkopplung während der Belichtung die Fotoresistschicht vor der Belichtung mit mindestens einer lichtdurchlässigen Schicht kombiniert und nach der Belichtung entfernt wird, wobei die Dicke der Schicht dg und deren Brechungsindex n g der bei der Belichtung in der zusätzlichen Schicht herrschenden Wellenlänge Λ ß des verwendeten Lichtes angepaßt ist, gekennzeichnet dadurch, daß als lichtdurchlässige Hilfsschicht eine j 2 Flüssigkeit verwendet wird, die der Dicke d Jt 2 ζ δ entspricht, wobei X die längste Wellenlänge, vorzugsweise die Justierwellenlänge, ist und die zugehörige Bandbreite sowie η den Brechungsindex der Flüssigkeit darstellt. 1 · A process for the elimination of interference effects in the production of semiconductor integrated circuits on photoresist layers by means of monochromatic light, wherein for reducing the effect of the different Intensitätseinkopplung during exposure of the photoresist layer is combined prior to exposure to at least one light-transmitting layer and removed after the exposure, wherein the thickness of the layer dg and the refractive index n g of the prevailing during the exposure in the additional layer wavelength Λ ß of the light used is adapted, characterized in that a j 2 liquid is used as the light transmissive support layer, the ζ of the thickness d Jt 2 δ corresponds wherein X is the longest wavelength, preferably the Justierwellenlänge and the associated bandwidth and η is the refractive index of the liquid is.
    Verfahren nach Funkt 1, gekennzeichnet dadurch, daß als Flüssigkeit Immersionsöl, Benzol, T etrachloräthylen, Tetrachlorkohlenstoff, Toluol, Xylol Trichlorethylen, Klarlack oder Pyridin verwendet wird. A method according to FUNC 1, characterized in that etrachloräthylen as a liquid immersion oil, benzene, T, carbon tetrachloride, toluene, xylene, trichlorethylene, varnish or pyridine is used.
    Verfahren nach Punkt 1 und 2, gekennzeichnet dadurch, daß die Flüssigkeit zwischen der Fotoresist oberfläche und dem Objektiv ohne Luftspalt angeordnet wird· The method of item 1 and 2, characterized in that the liquid between the photoresist and the surface is disposed to the lens without an air gap ·
    w 9 * * w 9 * *
    Z 4 ϋ ί ö b Z 4 ϋ ί ö b
    4« Verfahren nach den Punkten 1 bis 3, gekennzeichnet dadurch, daß die Flüssigkeit konstant zu- und abgeführt wird· 4 «A method according to items 1 to 3, characterized in that the liquid supply is constant and is dissipated ·
    c Verfahren nach* den Punkten 1 bis 4, gekennzeichnet dadurch, daß der Flüssigkeitsstand während des Belichtungsprozesses auf der Fotoresistschicht konstant bleibt. c * A process according to items 1 to 4, characterized in that the liquid level remains constant during the exposure process on the photoresist layer.
    6· Vorrichtung zur Durchführung des Verfahrens gemäß der Punkte 1 bis 5» gekennzeichnet dadurch, daß die Belichtungsoptik (5) eine Vorsatzeinrichtung (4) aufweist, die mit einem Vorratsbehälter (6) mit Steuereinrichtung (7) für die Flüssigkeit (1) verbunden ist, und daß die Vorsatzeinrichtung (4) bis auf das Niveau der auf dem Substrat (3) aufgebrachten Fotoresistschicht (2) absenkbar ist· 6 · apparatus for performing the method according to the points 1 to 5 »characterized in that the exposure optical system (5) has an attachment means (4) connected to a reservoir (6) is connected to control means (7) for the liquid (1) and in that the attachment means (4) to the level on the substrate (3) applied photoresist layer (2) is lowerable ·
    Hierzu 1 Seite Zeichnungen For this purpose, 1 page drawings
DD24078682A 1982-06-16 1982-06-16 A method and device for eliminating interference effects DD206607A1 (en)

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US7081943B2 (en) 2002-11-12 2006-07-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7379155B2 (en) 2004-10-18 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7535644B2 (en) 2005-08-12 2009-05-19 Asml Netherlands B.V. Lens element, lithographic apparatus, device manufacturing method, and device manufactured thereby
US7589818B2 (en) 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7804575B2 (en) 2004-08-13 2010-09-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method having liquid evaporation control
US7812924B2 (en) 2004-12-02 2010-10-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7839483B2 (en) 2005-12-28 2010-11-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a control system
US7852457B2 (en) 2004-11-12 2010-12-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7859644B2 (en) 2005-03-28 2010-12-28 Asml Netherlands B.V. Lithographic apparatus, immersion projection apparatus and device manufacturing method
US7864292B2 (en) 2005-11-16 2011-01-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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