JP3339144B2 - Scanning exposure apparatus and exposure method - Google Patents

Scanning exposure apparatus and exposure method

Info

Publication number
JP3339144B2
JP3339144B2 JP28230793A JP28230793A JP3339144B2 JP 3339144 B2 JP3339144 B2 JP 3339144B2 JP 28230793 A JP28230793 A JP 28230793A JP 28230793 A JP28230793 A JP 28230793A JP 3339144 B2 JP3339144 B2 JP 3339144B2
Authority
JP
Japan
Prior art keywords
exposure
mask
substrate
projection
scanning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP28230793A
Other languages
Japanese (ja)
Other versions
JPH07135165A (en
Inventor
晋 森
政光 柳原
剛 楢木
和明 佐伯
宗泰 横田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP28230793A priority Critical patent/JP3339144B2/en
Publication of JPH07135165A publication Critical patent/JPH07135165A/en
Application granted granted Critical
Publication of JP3339144B2 publication Critical patent/JP3339144B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70275Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70358Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70791Large workpieces, e.g. glass substrates for flat panel displays or solar panels

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は走査型露光装置に関し、
特に液晶ディスプレイパネル等の大型基板の露光に適し
た露光装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a scanning exposure apparatus,
In particular, the present invention relates to an exposure apparatus suitable for exposing a large substrate such as a liquid crystal display panel.

【0002】[0002]

【従来の技術】液晶ディスプレイパネルは、その表示品
質が近年著しく向上し、しかも薄くて軽量である利点か
らCRTに替わり広く普及してきている。特にアクティ
ブマトリックス方式の直視型液晶パネルでは大画面化が
進み、その製造に用いられるガラス基板も大型化してい
る。
2. Description of the Related Art In recent years, liquid crystal display panels have been widely used in place of CRTs because of their remarkably improved display quality and the advantages of being thin and lightweight. In particular, the screen size of an active matrix type direct-view type liquid crystal panel is increasing, and the size of a glass substrate used for manufacturing the same is also increasing.

【0003】このような大型のガラス基板を露光するた
めの露光装置としては、マスクと基板とを近接させて一
括露光する所謂プロキシミティ方式、投影光学系として
転写面積の大きな等倍の屈折光学系を用いたステップア
ンドリピート方式、および投影光学系を等倍の反射光学
系とし、円弧状の照明光でマスクを照明してこのマスク
の像を円弧状に基板に形成するとともに、マスクと基板
とを投影光学系に対して走査するミラープロジェクショ
ン方式がある。
As an exposure apparatus for exposing such a large glass substrate, a so-called proximity system in which a mask and a substrate are brought close to each other to perform simultaneous exposure, and a refraction optical system having a large transfer area as a projection optical system having a large transfer area are used. A step-and-repeat method using, and a projection optical system as a reflection optical system of the same magnification, illuminating the mask with arc-shaped illumination light to form an image of this mask on the substrate in an arc shape, There is a mirror projection system that scans a projection optical system.

【0004】[0004]

【発明が解決しようとする課題】プロキシミティ方式で
大型基板の露光を行う場合、基板に応じた大型のマスク
と基板とを数十μmにまで近接させる必要がある。その
ためマスクや基板の平坦性、基板に塗布されたレジスト
の表面形状(凹凸)や表面に付着したゴミ等のためにマ
スクと基板とが接触し、マスクのパターンを基板全面に
渡って無欠陥で転写することは相当困難である。また、
マスクと基板との間隔が転写される像の解像度、線幅、
線の形状に大きく影響するため、この間隔が均一に設計
値に維持されないとアクティブマトリックス方式の液晶
パネルや高精細なSTN方式の液晶パネルを製造するに
は適さない。
When a large substrate is exposed by the proximity method, it is necessary to bring a large mask corresponding to the substrate and the substrate close to several tens of μm. Therefore, the mask and the substrate come into contact due to the flatness of the mask and the substrate, the surface shape (irregularity) of the resist applied to the substrate, and dust adhering to the surface, and the pattern of the mask is defect-free over the entire surface of the substrate. Transcription is quite difficult. Also,
The resolution of the image to be transferred, the line width,
Since the distance greatly affects the shape of the line, if the distance is not uniformly maintained at a design value, it is not suitable for manufacturing an active matrix type liquid crystal panel or a high definition STN type liquid crystal panel.

【0005】またステップアンドリピート方式は、基板
に比べて相対的に小さな6インチ程度のレチクルをマス
クとして用い、ステップアンドリピートにより大型基板
へ転写を行うものである。このステップアンドリピート
方式は半導体素子の製造に用いられているレチクルをマ
スクとして用いることができるため、その描画精度、パ
ターン寸法管理、ゴミ管理等、半導体素子製造で培われ
た技術を応用することができる。しかしながら、大型基
板への転写の際、投影光学系の有効投影領域(イメージ
サークル)を越えた面積のデバイスを露光するために
は、基板の被転写領域を小面積に分割してそれぞれに露
光を行う、所謂分割露光することが必要である。アクテ
ィブマトリックス液晶パネルの表示部においては、分割
露光によって形成されたパターンの境界部分に微小なず
れが生じた場合、この部分で素子の性能が変化し、完成
された液晶パネル上で濃度むらが起こることになる。こ
れは人間の視覚で差として認識されやすく、液晶パネル
の表示品質上の欠陥となる。また分割数が多くなると露
光回数が増加するほか、1枚の基板を露光する間に何度
もレチクルを交換する必要が生じることもあり、装置と
しての処理能力を低下させる原因となっていた。
In the step-and-repeat method, a reticle of about 6 inches, which is relatively smaller than the substrate, is used as a mask, and transfer to a large substrate is performed by step-and-repeat. In this step-and-repeat method, a reticle used in the manufacture of a semiconductor device can be used as a mask, so that techniques cultivated in semiconductor device manufacture, such as drawing accuracy, pattern dimension management, dust management, etc., can be applied. it can. However, when transferring to a large substrate, in order to expose a device having an area that exceeds the effective projection area (image circle) of the projection optical system, the area to be transferred of the substrate is divided into small areas and each is exposed. It is necessary to perform so-called divided exposure. In the display section of an active matrix liquid crystal panel, when a small shift occurs at the boundary of a pattern formed by divided exposure, the performance of the element changes at this portion, and density unevenness occurs on the completed liquid crystal panel Will be. This is easily recognized as a difference by human eyes, and causes a defect in display quality of the liquid crystal panel. In addition, when the number of divisions increases, the number of exposures increases, and in addition, it is necessary to change the reticle many times while exposing one substrate, which causes a reduction in the processing performance of the apparatus.

【0006】さらにミラープロジェクション方式は、マ
スクや基板の走査方向に直交する方向に伸びた円弧状の
スリットをマスクと基板に対して相対走査することによ
ってマスクの全面を基板上に転写するため、大型基板を
効率的に露光するためにはスリット長を基板の寸法と同
等に長くする必要がある。このため光学系をより大型化
する必要が生じ、装置が大型化して高価なものとならざ
るを得ないといった問題がある。
Further, in the mirror projection system, the entire surface of the mask is transferred onto the substrate by relatively scanning an arc-shaped slit extending in a direction orthogonal to the scanning direction of the mask or the substrate with respect to the mask and the substrate. In order to expose a substrate efficiently, it is necessary to make the slit length as long as the size of the substrate. For this reason, it is necessary to increase the size of the optical system, and there is a problem in that the size of the apparatus must be increased to be expensive.

【0007】本発明は上記問題点に鑑み、小型の投影光
学系を用いて効率よく大面積に露光を行うことができる
露光装置を提供することを目的とする。
In view of the above problems, an object of the present invention is to provide an exposure apparatus that can efficiently perform exposure over a large area using a small projection optical system.

【0008】[0008]

【課題を解決するための手段】上記目的のため本発明で
は、光源(1)からの光束をマスク(10)のパターン
領域の一部分(11a〜11e)に照射する5つの照明
光学系(L1〜L5)と;所定の方向(Y方向)に沿っ
て、且つ所定の方向と直交する方向(X方向)に互いに
変位して配置されるとともに、マスクを透過した光束に
よる一部分それぞれの等倍の正立像(13a〜13e)
を感光基板(14)上に投影する5つの投影光学系(2
a〜12e)と;投影光学系に対して所定の方向とほぼ
直交する方向に、マスクと感光基板とを同期して同一の
速度で走査する走査手段(16)とを備え、パターン領
域(10a)の全面を感光基板上に転写する走査型露光
装置とする。また5つの照明光学系で照射される各投影
領域は、感光基板上にマスクのパターン領域を転写する
にしたがい、互いに隣接する投影領域の端部どうしが重
複するように配置されるように構成されている。また本
発明では、マスクのパターンを基板に露光する露光方法
において、複数の投影光学系(13a〜13e)を介して
マスクのパターンを基板に転写すると共に、複数の投影
光学系に対して相対的にマスクと基板とを所定の走査方
向に同期走査させる露光動作と、基板を走査方向と直交
する方向にステップさせるステップ動作とを含むように
する。また、ステップ動作は、複数回の走査による前記
露光動作の間に行うようにする。また、マスクのパター
ンが複数の投影光学系で転写できる複数の投影領域が走
査方向とは直交する方向に一定間隔をおいて配置され、
露光動作とステップ動作とを行うことによって、連続し
た露光領域が基板に形成されるようにする。また、複数
の投影光学系で投影される投影領域は、隣合う領域の端
部どうしが重複するように配置される。
According to the present invention, there are provided five illumination optical systems (L1 to L1) for irradiating a light beam from a light source (1) to a part (11a to 11e) of a pattern area of a mask (10). L5); being displaced from each other along a predetermined direction (Y direction) and in a direction (X direction) orthogonal to the predetermined direction, and each part of the light beam transmitted through the mask being a positive one-fold positive. Standing image (13a-13e)
Projection optical system (2) for projecting light onto a photosensitive substrate (14).
a to 12e); scanning means (16) for synchronously scanning the mask and the photosensitive substrate at the same speed in a direction substantially perpendicular to a predetermined direction with respect to the projection optical system, and ) Is a scanning type exposure apparatus for transferring the entire surface onto a photosensitive substrate. Each projection illuminated by five illumination optical systems
The area transfers the pattern area of the mask onto the photosensitive substrate
The edges of the projection areas adjacent to each other
It is configured to be arranged so as to overlap. Also book
In the present invention, an exposure method for exposing a pattern of a mask to a substrate
, Through a plurality of projection optical systems (13a to 13e)
The mask pattern is transferred to the substrate and multiple projections are performed.
A predetermined scanning method for the mask and substrate relative to the optical system
Exposure operation for synchronous scanning in the direction
And the step operation to step in the direction of
I do. In addition, the step operation is performed by a plurality of scans.
It is performed during the exposure operation. Also put on the mask putter
Multiple projection areas that can be transferred by multiple projection optics
Are arranged at regular intervals in the direction orthogonal to the inspection direction,
By performing the exposure operation and the step operation,
The exposed region is formed on the substrate. Also multiple
The projection area projected by the projection optical system of
The parts are arranged so as to overlap each other.

【0009】[0009]

【作用】本発明では、等倍の正立像を結像する投影光学
系をマスクと基板の走査方向に直交する方向に沿って5
つ千鳥配置し、この5つの投影光学系に対してマスクと
基板とを一体に走査することとしたため、個々の投影光
学系のイメージサークルを大きくすることなく、走査方
向に直交する方向に長い投影領域を形成することができ
る。このため従来の小型の投影光学系を流用することが
できる。また走査方向は一定であるため、投影光学系の
数や走査距離を選択すれば基板のサイズに応じた従来よ
りも小型な露光装置が実現できる。また、走査方向と直
交する方向にステップするようにして、複数回の走査に
より基板のサイズに応じた露光を行うことができる。
According to the present invention, a projection optical system for forming an erect image at the same magnification is provided along a direction orthogonal to the scanning direction of the mask and the substrate.
Since the mask and the substrate are integrally scanned with respect to the five projection optical systems in a staggered arrangement, projections long in the direction orthogonal to the scanning direction can be performed without increasing the image circle of each projection optical system. Regions can be formed. For this reason, a conventional small projection optical system can be used. In addition, since the scanning direction is constant, an exposure apparatus smaller than the conventional one can be realized according to the size of the substrate by selecting the number of projection optical systems and the scanning distance. In addition, the scanning direction
Step in the crossing direction to make multiple scans
Exposure can be performed according to the size of the substrate.

【0010】[0010]

【実施例】図1は、本発明の実施例による投影露光装置
の概略的な構成を示す図である。超高圧水銀ランプ等の
光源1から射出した光束は、楕円鏡2で反射された後に
ダイクロイックミラー3に入射する。このダイクロイッ
クミラー3は露光に必要な波長の光束を反射し、その他
の波長の光束を透過する。ダイクロイックミラー3で反
射された光束は、光軸AX1に対して進退可能に配置さ
れたシャッター4によって投影光学系側への照射を選択
的に制限される。シャッター4が開放されることによっ
て、光束は波長選択フィルター5に入射し、投影光学系
11aが転写を行うのに適した波長(通常は、g,h,
i線のうち少なくとも1つの帯域)の光束となる。ま
た、この光束の強度分布は光軸近傍が最も高く、周辺に
なると低下するガウス分布状になるため、少なくとも投
影光学系11aの投影領域12a内で強度を均一にする
必要がある。このため、フライアイレンズ6とコンデン
サーレンズ8によって光束の強度を均一化する。尚、ミ
ラー7は配列上の折り曲げミラーである。
FIG. 1 is a diagram showing a schematic configuration of a projection exposure apparatus according to an embodiment of the present invention. A light beam emitted from a light source 1 such as an ultra-high pressure mercury lamp is reflected by an elliptical mirror 2 and then enters a dichroic mirror 3. The dichroic mirror 3 reflects a light beam having a wavelength required for exposure and transmits a light beam having another wavelength. The light beam reflected by the dichroic mirror 3 is selectively restricted from being irradiated on the projection optical system side by a shutter 4 arranged to be able to advance and retreat with respect to the optical axis AX1. When the shutter 4 is opened, the light beam enters the wavelength selection filter 5, and the wavelength (usually g, h, and g) suitable for the projection optical system 11a to perform transfer.
(at least one band of the i-line). Further, since the intensity distribution of the light flux is highest in the vicinity of the optical axis and becomes Gaussian distribution decreasing in the periphery, it is necessary to make the intensity uniform at least in the projection area 12a of the projection optical system 11a. For this reason, the intensity of the light beam is made uniform by the fly-eye lens 6 and the condenser lens 8. Incidentally, the mirror 7 is a bending mirror on the array.

【0011】強度を均一化された光束は、視野絞り9を
介してマスク10のパターン面上に照射される。この視
野絞り9は感光基板(プレート)14上の投影領域13
aを制限する開口を有する。尚、視野絞り9とマスク1
0との間にレンズ系を設けて視野絞り9とマスク10の
パターン面とプレート14の投影面とが互いに共役にな
るようにしてもよい。
The luminous flux having uniform intensity is applied to the pattern surface of the mask 10 through the field stop 9. The field stop 9 is used to project a projection area 13 on a photosensitive substrate (plate) 14.
It has an opening that restricts a. The field stop 9 and the mask 1
A lens system may be provided between 0 and 0 so that the pattern surface of the field stop 9 and the mask 10 and the projection surface of the plate 14 are conjugate to each other.

【0012】光源1から視野絞り9までの構成を投影光
学系12aに対する照明光学系L1とし、本実施例では
上記と同様の構成の照明光学系L2〜L5を設けてそれ
ぞれからの光束を投影光学系12b〜12eのそれぞれ
に供給する。複数の照明光学系L1〜L5のそれぞれか
ら射出された光束はマスク10上の異なる小領域(照明
領域)11a〜11eをそれぞれ照明する。マスクを透
過した複数の光束は、それぞれ異なる投影光学系12a
〜12eを介してプレート14上の異なる投影領域13
a〜13eにマスク10の照明領域11a〜11eのパ
ターン像を結像する。この場合、投影光学系12a〜1
2eはいずれも正立等倍実結像系とする。
The configuration from the light source 1 to the field stop 9 is an illumination optical system L1 for the projection optical system 12a. In this embodiment, illumination optical systems L2 to L5 having the same configuration as described above are provided to project light beams from each of them. It supplies to each of the systems 12b-12e. Light beams emitted from each of the plurality of illumination optical systems L1 to L5 illuminate different small areas (illumination areas) 11a to 11e on the mask 10, respectively. The plurality of light beams transmitted through the mask are respectively transmitted to different projection optical systems 12a.
Through 12e different projection areas 13 on the plate 14
The pattern images of the illumination areas 11a to 11e of the mask 10 are formed on a to 13e. In this case, the projection optical systems 12a-1
Reference numeral 2e denotes an erecting unit-magnification real imaging system.

【0013】ところでプレート14上の投影領域13a
〜13eは、図2に示すようにY方向に沿って、隣合う
領域どうし(例えば、13aと13b,13bと13
c)が図のX方向に所定量変位するように、且つ隣合う
領域の端部どうし(破線で示す範囲)がY方向に重複す
るように配置される。よって、上記複数の投影光学系1
2a〜12eも各投影領域13a〜13eの配置に応じ
てX方向に所定量変位するとともにY方向に重複して配
置されている。また、複数の照明光学系L1〜L5の配
置は、マスク10上の照明領域が上記投影領域13a〜
13eと同様の配置となるように配置される。そして、
マスク10とプレート14とを同期して、投影光学系1
2a〜12eに対してX方向に走査することによって、
マスク上のパターン領域10aの全面をプレート上の露
光領域14aに転写する。
The projection area 13a on the plate 14
2 to 13e are adjacent to each other (for example, 13a and 13b, 13b and 13b) along the Y direction as shown in FIG.
c) are arranged so as to be displaced by a predetermined amount in the X direction in the figure, and so that the ends of the adjacent regions (ranges shown by broken lines) overlap in the Y direction. Therefore, the plurality of projection optical systems 1
2a to 12e are also displaced by a predetermined amount in the X direction according to the arrangement of the projection areas 13a to 13e, and are arranged so as to overlap in the Y direction. Further, the arrangement of the plurality of illumination optical systems L1 to L5 is such that the illumination area on the mask 10 is such that the projection areas 13a to 13a are arranged.
13e. And
The projection optical system 1 is synchronized with the mask 10 and the plate 14.
By scanning in the X direction with respect to 2a to 12e,
The entire surface of the pattern region 10a on the mask is transferred to the exposure region 14a on the plate.

【0014】プレート14はプレートステージ15に載
置されており、プレートステージ15は一次元の走査露
光を行うべく走査方向(X方向)に長いストロークを持
った駆動装置16を有している。さらに、走査方向につ
いては高分解能および高精度の位置測定装置(例えばレ
ーザ干渉計)17を有する。また、マスク10は不図示
のマスクステージにより支持され、このマスクステージ
もプレートステージ15と同様に、駆動装置とステージ
の走査方向の位置を検出する位置測定装置とを有する。
The plate 14 is mounted on a plate stage 15, and the plate stage 15 has a driving device 16 having a long stroke in the scanning direction (X direction) to perform one-dimensional scanning exposure. Further, it has a high-resolution and high-accuracy position measuring device (for example, a laser interferometer) 17 in the scanning direction. The mask 10 is supported by a mask stage (not shown). The mask stage also has a driving device and a position measuring device for detecting the position of the stage in the scanning direction, like the plate stage 15.

【0015】ここで、本実施例による露光装置に適用さ
れる投影光学系の例について図3,図4,図5を用いて
説明する。本発明では、上述のように複数の投影光学系
を走査方向に対して直交する方向に沿って配置するた
め、投影光学系それぞれの像は正立像である必要があ
る。また、マスクとプレートの移動精度を高くしたり、
移動方向の違いによって装置が大型化することを防ぐ等
の目的で、マスクとプレートとを一体に移動することが
考えられる。そこで本発明ではマスクとプレートとを投
影光学系に対して同方向に同一量、相対的に走査するこ
ととし、投影光学系は正立等倍実結像系とする。各図と
も実線で示す矢印がマスク面のパターンおよびプレート
上の投影像に対応する。
Here, an example of a projection optical system applied to the exposure apparatus according to the present embodiment will be described with reference to FIGS. In the present invention, since a plurality of projection optical systems are arranged along the direction orthogonal to the scanning direction as described above, the images of the projection optical systems need to be erect images. In addition, we can improve the accuracy of the movement of the mask and plate,
It is conceivable to move the mask and the plate together for the purpose of preventing the apparatus from being enlarged due to the difference in the moving direction. Therefore, in the present invention, the mask and the plate are relatively scanned by the same amount in the same direction with respect to the projection optical system, and the projection optical system is an erecting unit-magnification real imaging system. In each of the drawings, the arrows shown by solid lines correspond to the pattern on the mask surface and the projected image on the plate.

【0016】図3は、倒立実結像系21,22を装置の
光軸に沿って(各結像系の光軸が一致するように)直列
に配置した例である。この場合、結像系21と結像系2
2は同一のものが使用できる。また、結像系の1つに等
倍系を用いることも可能であり、拡大系と縮小系とを組
み合わせて用いることも可能である。結像系は図中の点
線で示す矢印の位置にできる中間像に関し対称になるよ
う配置することによって、マスクのパターンをプレート
上に正立等倍の投影像として結像することができる。
FIG. 3 shows an example in which inverted real imaging systems 21 and 22 are arranged in series along the optical axis of the apparatus (so that the optical axes of the respective imaging systems coincide). In this case, the imaging system 21 and the imaging system 2
2 can be the same. It is also possible to use an equal magnification system as one of the imaging systems, and it is also possible to use a combination of an enlargement system and a reduction system. By arranging the imaging system symmetrically with respect to the intermediate image formed at the position of the arrow indicated by the dotted line in the drawing, the pattern of the mask can be formed on the plate as an erecting equal-magnification projection image.

【0017】図4は、倒立実結像系にイメージローテー
ターを組み込んだ例である。図4でイメージローテータ
ー24が無ければレンズ系23,25で構成される結像
系は倒立実結像系となるものである。イメージローテー
ター24は、屋根型加工を施した梯型プリズムである。
図5は、分布屈折率ガラスを用いる例である。中心部分
の屈折率が高く、周辺に行くに従い低くなる、所謂分布
屈折率ガラスをある所望の長さにして用いると、図5に
示すように等倍実結像系となることが知られる。このと
き、分布屈折率ガラス26の端面は平面であっても、曲
面(所定曲率の球面、或いは非球面形状)であっても構
わない。
FIG. 4 shows an example in which an image rotator is incorporated in an inverted real imaging system. In FIG. 4, if there is no image rotator 24, the image forming system constituted by the lens systems 23 and 25 is an inverted real image forming system. The image rotator 24 is a trapezoidal prism that has been roof-shaped.
FIG. 5 is an example using a distributed index glass. It is known that when a so-called distributed refractive index glass having a high refractive index at the center portion and decreasing toward the periphery and having a certain desired length is used, an actual-magnification real imaging system is obtained as shown in FIG. At this time, the end surface of the distributed refractive index glass 26 may be a flat surface or a curved surface (spherical or aspherical shape having a predetermined curvature).

【0018】いずれの例においても、マスクやプレート
の面が光軸方向に変化したときの像の倍率変化を避ける
ため、投影光学系は物点側、像点側ともにテレセントリ
ックであることが望ましい。次に露光動作について述べ
る。アクティブマトリックス方式の液晶パネルは、その
アクティブ素子を形成するために製造工程で複数のパタ
ーン層を重ね合わせて露光することが必要になる。この
ため、原板となるマスク10も複数必要である。先ず、
投影光学系を保持している保持部材によって保持された
不図示のマスクアライメント系によって、マスク10を
露光装置に対して位置決めする。同様に、プレート14
も露光装置に対して位置決めする。このようにマスク1
0とプレート14が位置決めされた状態を保ち、マスク
とプレートとを同期して同速度で投影光学系に対して図
のX方向に走査することによって露光を行う。このと
き、距離Lx,Lyで示す露光領域14a内で同一の露
光条件(均一な露光量)とするためにX方向の走査範囲
のうち、Lx間の露光の走査は等速度で行わなければな
らない。このため、X方向の走査には投影光学系の結像
範囲にLxが達するまでに等速度となるよう助走を要す
る。露光中の走査速度をv(cm/s)、照明パワーをP
(W/cm2)、開口の幅をw(cm)としたとき、得られる
露光量D(J/cm2)は、
In any of the examples, it is desirable that the projection optical system be telecentric on both the object point side and the image point side in order to avoid a change in the magnification of the image when the surface of the mask or plate changes in the optical axis direction. Next, the exposure operation will be described. An active matrix type liquid crystal panel requires a plurality of pattern layers to be overlapped and exposed in a manufacturing process in order to form the active element. For this reason, a plurality of masks 10 serving as original plates are required. First,
The mask 10 is positioned with respect to the exposure apparatus by a mask alignment system (not shown) held by a holding member holding the projection optical system. Similarly, plate 14
Is also positioned with respect to the exposure apparatus. Thus, mask 1
The exposure is performed by scanning the projection optical system in the X direction in the drawing at the same speed while synchronizing the mask and the plate while maintaining the state where the 0 and the plate 14 are positioned. At this time, in order to make the same exposure condition (uniform exposure amount) within the exposure area 14a indicated by the distances Lx and Ly, the scanning of the exposure between Lx must be performed at a constant speed in the scanning range in the X direction. . For this reason, scanning in the X direction requires a run so that the scanning speed becomes constant until Lx reaches the image forming range of the projection optical system. Scanning speed during exposure is v (cm / s), illumination power is P
(W / cm 2 ) and the width of the opening is w (cm), the exposure amount D (J / cm 2 ) obtained is

【0019】[0019]

【数1】 (Equation 1)

【0020】によって与えられる。よって、プレート1
4に塗布された感光剤に必要な露光量に従ってそれぞれ
のパラメータを決定することができる。図1、図2に示
した実施例では、一回の走査でパターン全面の転写が行
われる例であった。しかしこれは複数回の走査によりプ
レート上の露光領域全面に転写を行うことも可能であ
る。図6は、例えば図1に示す投影光学系のうち12
a,12c,12eのみを用いるような場合である。こ
れは、3つの投影光学系を走査方向と直交する方向に所
定間隔をおいて配置し、プレート14上に投影領域13
a,13c,13eを形成する。そして、投影領域13
cの中心のプレート上での走査軌跡が破線61となるよ
うにX方向の走査、およびY方向のステップを行う例で
ある。またさらに、図7に示すように、例えば図1の投
影光学系12a,12bのみを用いて投影領域13a,
13bを形成し、投影領域13aの中心が破線62の軌
跡を辿るように走査、およびステップを行ってもよい。
Is given by Therefore, plate 1
The respective parameters can be determined in accordance with the exposure amount required for the photosensitive agent applied to No. 4. In the embodiment shown in FIGS. 1 and 2, the entire pattern is transferred by one scanning. However, it is also possible to perform the transfer over the entire exposure area on the plate by performing a plurality of scans. FIG. 6 shows, for example, 12 of the projection optical systems shown in FIG.
This is the case where only a, 12c and 12e are used. This is because three projection optical systems are arranged at a predetermined interval in a direction orthogonal to the scanning direction, and the projection area 13
a, 13c and 13e are formed. And the projection area 13
This is an example in which scanning in the X direction and steps in the Y direction are performed such that the scanning trajectory on the plate at the center of c becomes a broken line 61. Further, as shown in FIG. 7, for example, using only the projection optical systems 12a and 12b of FIG.
13b may be formed, and scanning and steps may be performed so that the center of the projection area 13a follows the locus of the broken line 62.

【0021】尚、上記実施例では投影光学系が一度に転
写できる範囲(投影領域)の形状を図2に示すような細
長六角形(13a〜13e)としたが、他の例として図
8〜図11に示すような形状であっても構わない。図9
は投影領域が正六角形、図10は等脚台形、図11は平
行四辺形の場合を示す。図8〜図10の外周円は投影光
学系のイメージサークルである。言うまでもなく、この
サークル内で視野絞り9の開口によって投影光学系の投
影領域が設定される。いずれの例においても、幅wの広
がり方向は走査方向(図2のX方向)と一致している。
またこの投影領域を、プレートに対する一度の走査中に
1つの投影光学系によってのみ投影される部分sと、複
数の走査または複数の投影光学系によって投影される部
分tとに分けて考えたとき、部分tのプレートに対する
露光量の総和が部分sの露光量に一致している必要を満
たす形状でなければならない。
In the above embodiment, the shape of the area (projection area) in which the projection optical system can transfer images at a time is an elongated hexagon (13a to 13e) as shown in FIG. 2, but as another example, FIGS. The shape shown in FIG. 11 may be used. FIG.
Shows a case where the projection area is a regular hexagon, FIG. 10 shows a case of an equilateral trapezoid, and FIG. 11 shows a case of a parallelogram. 8 to 10 are image circles of the projection optical system. Needless to say, the projection area of the projection optical system is set by the opening of the field stop 9 in this circle. In any of the examples, the spreading direction of the width w coincides with the scanning direction (X direction in FIG. 2).
Further, when this projection area is considered as divided into a portion s projected only by one projection optical system during one scan of the plate and a portion t projected by a plurality of scans or a plurality of projection optical systems, The shape must satisfy the requirement that the sum of the exposure amounts for the plate in the portion t coincides with the exposure amount in the portion s.

【0022】[0022]

【発明の効果】以上のように本発明によれば、基板の走
査方向に直交する方向に沿って5つの正立等倍実結像系
の投影光学系を千鳥配置し、マスクと基板とを同方向に
同期して走査する構成としたため、小型の投影光学系を
用いながらも従来より大きな投影領域を得ることができ
る。そのため、コンパクトで低コストの露光装置の実現
が可能となる。また、複数回の走査により基板上の露光
領域全面にパターンを転写することが実現可能となり、
効率良く大型基板にパターンを露光することが可能とな
る。
As described above, according to the present invention, the projection optical systems of the five erecting equal-magnification real imaging systems are staggered along the direction orthogonal to the scanning direction of the substrate, and the mask and the substrate are connected. Since the scanning is performed synchronously in the same direction, a larger projection area than before can be obtained while using a small projection optical system. Therefore, a compact and low-cost exposure apparatus can be realized. Also, exposure on the substrate by multiple scans
It becomes feasible to transfer the pattern over the entire area,
It is possible to efficiently expose patterns on large substrates.
You.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施例による走査型露光装置の概略的
な構成を示す図
FIG. 1 is a diagram showing a schematic configuration of a scanning exposure apparatus according to an embodiment of the present invention.

【図2】プレート上での投影領域の様子を示す図FIG. 2 is a diagram showing a state of a projection area on a plate.

【図3】本発明の実施例による走査型露光装置に適用さ
れる投影光学系の例を示す図
FIG. 3 is a diagram showing an example of a projection optical system applied to a scanning exposure apparatus according to an embodiment of the present invention.

【図4】本発明の実施例による走査型露光装置に適用さ
れる投影光学系の例を示す図
FIG. 4 is a diagram showing an example of a projection optical system applied to a scanning exposure apparatus according to an embodiment of the present invention.

【図5】本発明の実施例による走査型露光装置に適用さ
れる投影光学系の例を示す図
FIG. 5 is a diagram showing an example of a projection optical system applied to a scanning exposure apparatus according to an embodiment of the present invention.

【図6】露光動作の他の例を示す図FIG. 6 is a diagram showing another example of the exposure operation.

【図7】露光動作の他の例を示す図FIG. 7 is a diagram showing another example of the exposure operation.

【図8】投影領域の形状の他の例を示す図FIG. 8 is a diagram showing another example of the shape of the projection area.

【図9】投影領域の形状の他の例を示す図FIG. 9 is a diagram showing another example of the shape of the projection area.

【図10】投影領域の形状の他の例を示す図FIG. 10 is a diagram showing another example of the shape of the projection area.

【符号の説明】 L1〜L5 照明光学系 10 マスク 11a〜11e 照明領域 12a〜12e 投影光学系 13a〜13e 投影領域 14 プレート 15 ステージ 16 駆動装置[Description of Signs] L1 to L5 Illumination optical system 10 Mask 11a to 11e Illumination area 12a to 12e Projection optical system 13a to 13e Projection area 14 Plate 15 Stage 16 Driving device

───────────────────────────────────────────────────── フロントページの続き (72)発明者 横田 宗泰 東京都千代田区丸の内3丁目2番3号 株式会社ニコン内 (56)参考文献 特開 昭60−109228(JP,A) 特開 昭63−49218(JP,A) 特開 平4−196513(JP,A) 特開 平1−101628(JP,A) 特開 昭61−176118(JP,A) 特開 平7−86139(JP,A) 特開 昭52−15266(JP,A) 特開 平4−251812(JP,A) 特開 平7−57986(JP,A) 米国特許4696889(US,A) 米国特許4769680(US,A) (58)調査した分野(Int.Cl.7,DB名) G03F 7/20 H01L 21/027 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Muneyasu Yokota 3-2-2 Marunouchi, Chiyoda-ku, Tokyo Nikon Corporation (56) References JP-A-60-109228 (JP, A) JP-A-63 JP-A-49218 (JP, A) JP-A-4-196513 (JP, A) JP-A-1-101628 (JP, A) JP-A-61-176118 (JP, A) JP-A-7-86139 (JP, A) JP-A-52-15266 (JP, A) JP-A-4-251812 (JP, A) JP-A-7-57986 (JP, A) US Pat. No. 4,696,889 (US, A) US Pat. (58) Field surveyed (Int.Cl. 7 , DB name) G03F 7/20 H01L 21/027

Claims (6)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 光源からの光束をマスクのパターン領域
の一部分に照射する5つの照明光学系と、 所定の方向に沿って、且つ該所定の方向と直交する方向
に互いに変位して配置されるとともに、前記マスクを透
過した前記光束による前記一部分それぞれの等倍の正立
像を感光基板上に投影する5つの投影光学系と、 前記投影光学系に対して前記所定の方向とほぼ直交する
方向に、前記マスクと前記感光基板とを同期して同一の
速度で走査する走査手段とを備え、 前記パターン領域の全面を前記感光基板上に転写するこ
とを特徴とする走査型露光装置。
1. Five illumination optical systems for irradiating a part of a pattern region of a mask with a light beam from a light source, and are arranged so as to be displaced from each other along a predetermined direction and in a direction orthogonal to the predetermined direction. And five projection optical systems for projecting an equal-length erect image of each of the portions by the light flux transmitted through the mask onto a photosensitive substrate, and in a direction substantially orthogonal to the predetermined direction with respect to the projection optical system. A scanning unit that scans the mask and the photosensitive substrate at the same speed in synchronization with each other, and transfers the entire surface of the pattern area onto the photosensitive substrate.
【請求項2】 前記5つの照明光学系で照射される各投2. The projection system according to claim 1, wherein each of the projections is illuminated by the five illumination optical systems.
影領域は、前記感光基板上に前記マスクのパターン領域The shadow area is a pattern area of the mask on the photosensitive substrate.
を転写するにしたがい、互いに隣接する投影領域の端部The edges of the projection areas adjacent to each other as
どうしが重複するように配置されることを特徴とする請Contractors characterized in that they are arranged so that they overlap
求項1記載の走査型露光装置。The scanning exposure apparatus according to claim 1.
【請求項3】 マスクのパターンを基板に露光する露光3. Exposure for exposing a pattern of a mask to a substrate.
方法において、In the method, 複数の投影光学系を介して前記マスクのパターンを前記The mask pattern through a plurality of projection optical systems;
基板に転写すると共に、前記複数の投影光学系に対してWhile transferring to the substrate, the plurality of projection optical systems
相対的に前記マスクと前記基板とを所定の走査方向に同Relatively align the mask and the substrate in a predetermined scanning direction.
期走査させる露光動作と、Exposure operation to perform initial scanning, 前記基板を前記走査方向と直交する方向にステップさせStepping the substrate in a direction perpendicular to the scanning direction.
るステップ動作とを含むことを特徴とする露光方法。An exposure method comprising:
【請求項4】 前記ステップ動作は、複数回の走査によ4. The method according to claim 1, wherein the step operation is performed by a plurality of scans.
る前記露光動作の間に行うことを特徴とする請求項3記4. The method according to claim 3, wherein the exposure is performed during the exposure operation.
載の露光方法。Exposure method described above.
【請求項5】 前記マスクのパターンが前記複数の投影5. The method according to claim 1, wherein the pattern of the mask includes the plurality of projections.
光学系で転写された複数の投影領域が前記走査方向とはThe plurality of projection areas transferred by the optical system correspond to the scanning direction.
直交する方向に一定間隔をおいて配置され、前記露光動Are arranged at regular intervals in the direction orthogonal to each other,
作と前記ステップ動作とを行うことによって、連続したBy performing the operation and the step operation,
露光領域が前記基板に形成されることを特徴とする請求An exposure area is formed on the substrate.
項3又4に記載の露光方法。Item 5. The exposure method according to Item 3 or 4.
【請求項6】 前記複数の投影光学系で投影される投影6. A projection projected by the plurality of projection optical systems.
領域は、隣合う領域の端部どうしが重複するように配置Areas are arranged so that the ends of adjacent areas overlap
されることを特徴とする請求項3、4又5に記載の露光6. The exposure according to claim 3, wherein the exposure is performed.
方法。Method.
JP28230793A 1993-11-11 1993-11-11 Scanning exposure apparatus and exposure method Expired - Lifetime JP3339144B2 (en)

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Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3477838B2 (en) * 1993-11-11 2003-12-10 株式会社ニコン Scanning exposure apparatus and exposure method
DE19757074A1 (en) 1997-12-20 1999-06-24 Zeiss Carl Fa Projection exposure system and exposure method
TW447009B (en) 1999-02-12 2001-07-21 Nippon Kogaku Kk Scanning exposure method and scanning type exposure device
JP4617616B2 (en) * 2001-07-11 2011-01-26 株式会社ニコン Exposure apparatus and exposure method
TWI232347B (en) 2001-12-26 2005-05-11 Pentax Corp Projection aligner
TWI240850B (en) 2001-12-26 2005-10-01 Pentax Corp Projection aligner
TWI232348B (en) 2001-12-26 2005-05-11 Pentax Corp Projection aligner
TWI228636B (en) 2002-01-11 2005-03-01 Pentax Corp Projection aligner
WO2004074934A1 (en) * 2003-01-28 2004-09-02 Ball Semiconductor Inc. Mask making method, mask making device, and mask drawing device
KR101124179B1 (en) 2003-04-09 2012-03-27 가부시키가이샤 니콘 Exposure method and apparatus, and device manufacturing method
TWI474132B (en) 2003-10-28 2015-02-21 尼康股份有限公司 Optical illumination device, projection exposure device, exposure method and device manufacturing method
TWI612338B (en) 2003-11-20 2018-01-21 尼康股份有限公司 Optical illuminating apparatus, exposure device, exposure method, and device manufacturing method
TWI360837B (en) 2004-02-06 2012-03-21 Nikon Corp Polarization changing device, optical illumination
US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8248577B2 (en) 2005-05-03 2012-08-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101455551B1 (en) 2005-05-12 2014-10-27 가부시키가이샤 니콘 Projection optical system, exposure apparatus and exposure method
JP4807100B2 (en) * 2006-02-23 2011-11-02 株式会社ニコン Exposure apparatus, exposure method, and device manufacturing method
JP5267029B2 (en) 2007-10-12 2013-08-21 株式会社ニコン Illumination optical apparatus, exposure apparatus, and device manufacturing method
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
JP2009295950A (en) * 2008-05-09 2009-12-17 Nsk Ltd Scan exposure equipment and scan exposure method
JP5294489B2 (en) * 2009-12-14 2013-09-18 株式会社ブイ・テクノロジー Exposure method and exposure apparatus
JP6124201B2 (en) * 2015-07-23 2017-05-10 ウシオ電機株式会社 Polarized light irradiation method for photo-alignment
JP6253002B2 (en) * 2016-10-06 2017-12-27 ウシオ電機株式会社 Polarizing light irradiation apparatus for photo-alignment and polarized light irradiation method for photo-alignment

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5215266A (en) * 1975-07-25 1977-02-04 Canon Inc Pattern printing unit
JPS60109228A (en) * 1983-11-18 1985-06-14 Hitachi Ltd Projection exposing device
JPS61176118A (en) * 1985-01-31 1986-08-07 Canon Inc Exposing device
US4696889A (en) * 1985-08-23 1987-09-29 Yevick George J Method of photoforming optical patterns for VLSI devices
JPS6349218A (en) * 1986-08-19 1988-03-02 Shinryo Air Conditioning Co Ltd Air cleaner
US4769680A (en) * 1987-10-22 1988-09-06 Mrs Technology, Inc. Apparatus and method for making large area electronic devices, such as flat panel displays and the like, using correlated, aligned dual optical systems
JPH01101628A (en) * 1987-10-14 1989-04-19 Nec Corp Reducing stepper
US5159172A (en) * 1990-08-07 1992-10-27 International Business Machines Corporation Optical projection system
JP2691319B2 (en) * 1990-11-28 1997-12-17 株式会社ニコン Projection exposure apparatus and scanning exposure method
JP3348467B2 (en) * 1993-06-30 2002-11-20 株式会社ニコン Exposure apparatus and method
JP3427128B2 (en) * 1993-09-14 2003-07-14 株式会社ニコン Exposure apparatus and exposure method

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