JPH04179115A - Contracted projection aligner - Google Patents

Contracted projection aligner

Info

Publication number
JPH04179115A
JPH04179115A JP2303484A JP30348490A JPH04179115A JP H04179115 A JPH04179115 A JP H04179115A JP 2303484 A JP2303484 A JP 2303484A JP 30348490 A JP30348490 A JP 30348490A JP H04179115 A JPH04179115 A JP H04179115A
Authority
JP
Japan
Prior art keywords
stage
michelson
interferometers
laser
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2303484A
Other languages
Japanese (ja)
Inventor
Kazuhisa Tajima
田島　一久
Makoto Ikejiri
池尻　誠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP2303484A priority Critical patent/JPH04179115A/en
Publication of JPH04179115A publication Critical patent/JPH04179115A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position

Abstract

PURPOSE:To enable the slip and the gradient in the Z axial direction on the reflection surface to be monitored per shot by a method wherein Michelson's interferometers are respectively arranged in X, Y, Z axial directions on a stage to mount a semiconductor wafer and mobile mirrors perpendicularly opposing to the laser beams oscillated from respective interferometers are fitted to the stage. CONSTITUTION:Mobil mirrors 2-5 are fitted to the side of a stage 1. Next, Michelson's laser interferometers 6, 8 are arranged on the perpendicular surfaces of X Z of the mobile mirror 2 while the Michelson's laser interferometers 7, 9 are arranged on the perpendicular surfaces of X Z of the mobile mirror 3. Through these procedures, in order to contact-project the pattern on the semiconductor wafer 10 on a stage 1, the gradient and the slip of the stage 1 can be constantly monitored thereby enabling the mechanical error due to aging, etc., in the device to be corrected.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体製造装置に関し、特に縮小投影露光装置
に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor manufacturing apparatus, and particularly to a reduction projection exposure apparatus.

〔従来の技術〕[Conventional technology]

従来の縮小投影露光装置では、第３図の斜視図に示す様
に、半導体ウェハー１０をのせるステージ１は、Ｘ軸、
Ｙ軸方向に対し各々垂直な面を持つ移動鏡１１と、その
各々の面に対して対面して設けられたマイケルソンレー
ザ干渉計６及び７を有している。このステージ１めモニ
タ動作としては、固定されたマイケルソンレーザ干渉計
６及び７から発した照射レーザ光］２がそれぞれ垂直に
対面する移動鏡１１で反射され、反射レーザ光１３とし
て照射レーザ光１２と同一光路を反射されてくる。In the conventional reduction projection exposure apparatus, as shown in the perspective view of FIG.
It has movable mirrors 11 each having a surface perpendicular to the Y-axis direction, and Michelson laser interferometers 6 and 7 provided facing each surface. In the first stage monitoring operation, the irradiated laser beams 2 emitted from the fixed Michelson laser interferometers 6 and 7 are reflected by the vertically facing movable mirrors 11, and the irradiated laser beams 12 are reflected as reflected laser beams 13. It is reflected along the same optical path.

こめ照射レーザ光１２及び反射レーザ光１３を干渉さぜ
ると、各レーザ光は単一波長で且つ位相が揃っていると
いう性質により、ステージ］がＸ、Ｙ平面を移動する際
、Ｘ、Ｙ軸に沿って、使用しているレーザ光の波長λの
λ／４の距離毎に、マイケルソンレーザ干渉計６及び７
のディテクター面上では明暗を繰り返す。When the irradiated laser beam 12 and the reflected laser beam 13 are interfered, each laser beam has a single wavelength and the same phase. Along the axis, at every distance of λ/4 of the wavelength λ of the laser light being used, Michelson laser interferometers 6 and 7 are installed.
The light and darkness repeats on the detector surface.

この明暗の数をカウントする事により、ステージのＸ、
Ｙ方向への正確な位置をモニタしていた。By counting the number of brightness and darkness, the X of the stage,
The exact position in the Y direction was monitored.

第５図は、マイケルソンレーザ干渉計の原理図である。FIG. 5 is a diagram showing the principle of a Michelson laser interferometer.

ずなわぢ、レーザ発振器１４からの照射レーザ光１２と
、移動鏡２で反射する反射レーザ光１３との干渉縞がデ
ィテクター面上に表れる。Interference fringes between the irradiated laser beam 12 from the laser oscillator 14 and the reflected laser beam 13 reflected by the movable mirror 2 appear on the detector surface.

１８は固定鏡である。18 is a fixed mirror.

家な、ステージのＺ軸方向の露光面の変動に対しては、
第４図の光路図に示す様に、レーザ発振器１４から出た
レーザ光がステージ面あるいは半導体ウェハー面の反射
面１５で反射され、ディテクター１７で受光される時の
バーピングミラー１６の回転角度で、反斜面のＺ軸方向
ずれ及び傾斜をショット毎にフォーカスコントロールを
行ない、モニターする様な構成となっている。Regarding the fluctuation of the exposure surface in the Z-axis direction of the stage,
As shown in the optical path diagram of FIG. 4, the rotation angle of the burping mirror 16 when the laser beam emitted from the laser oscillator 14 is reflected by the reflecting surface 15 of the stage surface or the semiconductor wafer surface and received by the detector 17. The configuration is such that the focus control is performed and the inclination of the opposite slope in the Z-axis direction is monitored for each shot.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

この従来の縮小投影露光装置では、Ｘ、Ｙ軸方向へのス
テージの移動量のみ常時モニタする方式％式％ その為、ステージのＺ軸方向のずれ及び傾斜については
、第４図に示した方法で、ショット毎にフォーカスを取
る事で行なっているが、実際的にビ は、バーヤングミラー１６の回転角度と反射面１５のず
れ量の相関を取って間接的に行なっている。この様なシ
ステムでは、バーピングミラー１６の回転角度と反射面
１５のずれ量との相関が崩れた場合、リアルタイムでそ
の崩れを確認する事が出来ないという問題点があった。This conventional reduction projection exposure apparatus uses a method that constantly monitors only the amount of movement of the stage in the X and Y axis directions.Therefore, the shift and inclination of the stage in the Z axis direction can be determined using the method shown in Figure 4. Although this is done by taking focus for each shot, in reality, B is done indirectly by calculating the correlation between the rotation angle of the Buryoung mirror 16 and the amount of shift of the reflecting surface 15. Such a system has a problem in that if the correlation between the rotation angle of the burping mirror 16 and the amount of deviation of the reflective surface 15 breaks down, it is not possible to confirm the break in real time.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の縮小投影露光装置は、半導体ウェハーをのせる
ステージのＸ、Ｙ、Ｚ軸方向の各々にマイケルソンレー
ザ干渉計を設け、前記各々の干渉形から発振するレーザ
光の各々に垂直に対面する移動鏡を前記ステージに備え
ている。In the reduction projection exposure apparatus of the present invention, a Michelson laser interferometer is provided in each of the X, Y, and Z axis directions of a stage on which a semiconductor wafer is placed, and the Michelson laser interferometer is provided perpendicularly to each of the laser beams oscillated from each of the above-mentioned interference types. The stage is equipped with a movable mirror.

〔実施例〕〔Example〕

次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第１図は本発明の実施例１の斜視図である。本実施例は
、ステージ１の側面に移動鏡２〜５を取り付け、移動鏡
２の垂直なＸ−７の２面に対してマイケルソンレーザ干
渉計６と８を、また移動鏡３の垂直なＸ−７面に対して
マイケルソンレーザ干渉計７と９を、第１図の様に配置
している。FIG. 1 is a perspective view of Embodiment 1 of the present invention. In this embodiment, movable mirrors 2 to 5 are attached to the side surface of stage 1, Michelson laser interferometers 6 and 8 are mounted on the two vertical X-7 surfaces of movable mirror 2, and Michelson laser interferometers 6 and 8 are mounted on the vertical Michelson laser interferometers 7 and 9 are arranged on the X-7 plane as shown in FIG.

この様な構成にする事により、ステージ１上の半導体ウ
ェハー］０上にあるパターンを縮小投影する際、ステー
ジ１１の傾斜及びずれを常時モニタする事ができ、装置
の経時変化等による機械的な誤差の補正を可能にしてい
る。With this configuration, when reducing and projecting the pattern on the semiconductor wafer 0 on stage 1, the inclination and displacement of stage 11 can be constantly monitored, and mechanical damage due to changes in the equipment over time etc. can be constantly monitored. This makes it possible to correct errors.

第２図は、本発明の実施例２の斜視図で、ステージ１の
側面に移動＠２〜５を取り付け、Ｚ軸方向のマイケルソ
ンレーザ干渉計８から移動鏡２〜５のＺ軸面までの距離
を、ステージ１に取り付けた中心軸を回転させる事で測
定し、ステージの傾きをチエツクできるようにしたもの
である。この実施例によれば、マイケルソンレーザ干渉
計が１個で済むという利点がある。FIG. 2 is a perspective view of Embodiment 2 of the present invention, in which the movable mirrors 2 to 5 are attached to the side surface of the stage 1, and the Michelson laser interferometer 8 in the Z-axis direction is moved from the Michelson laser interferometer 8 to the Z-axis plane of the movable mirrors 2 to 5. This distance is measured by rotating the central axis attached to the stage 1, and the inclination of the stage can be checked. This embodiment has the advantage that only one Michelson laser interferometer is required.

〔発明の効果〕〔Effect of the invention〕

以上説明した様に本発明は、ｘ、Ｙ軸方向の移動量に対
してだけでなく、Ｚ軸方向のステージの傾斜及びずれに
対しても、常時モニタできるという効果を有する。As explained above, the present invention has the advantage of being able to constantly monitor not only the amount of movement in the x- and Y-axis directions, but also the inclination and displacement of the stage in the Z-axis direction.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の実施例１の斜視図、第２図は本発明の
実施例２の斜視図、第３図は従来の露光装置の斜視図、
第４図は従来のフォーカスコンＩ・ロールの光路図、第
５図はマイケルソンレーザ干渉計の原理図である。 １・・・ステージ、２，３，４．５・・・移動鏡、６゜
７．８．９・・・マイケルソンレーザ干渉計、１０・・
・半導体ウェハー、１１・・・移動鏡、１２・・・照射
レーザ光、１３・・・反射レーザ光、］４・・・レーザ
発振器、１５・・・反射面、１６・・・バーピングミラ
ー、１７・・・デイデクター、］８・・・固定鏡。FIG. 1 is a perspective view of Embodiment 1 of the present invention, FIG. 2 is a perspective view of Embodiment 2 of the present invention, and FIG. 3 is a perspective view of a conventional exposure apparatus.
FIG. 4 is an optical path diagram of a conventional focus controller I roll, and FIG. 5 is a principle diagram of a Michelson laser interferometer. 1... Stage, 2, 3, 4.5... Moving mirror, 6° 7.8.9... Michelson laser interferometer, 10...
- Semiconductor wafer, 11... Moving mirror, 12... Irradiated laser beam, 13... Reflected laser beam,] 4... Laser oscillator, 15... Reflective surface, 16... Burping mirror, 17...Deidector, ]8...Fixed mirror.

Claims (1)

【特許請求の範囲】[Claims] 　半導体ウェハーをのせるステージのＸ、Ｙ、Ｚ軸方向
の各々にマイケルソンレーザ干渉計を設け、前記各々の
干渉計から発振するレーザ光の各々に垂直に対面する移
動鏡を前記ステージに備えていることを特徴とする縮小
投影露光装置。A Michelson laser interferometer is provided in each of the X, Y, and Z axis directions of a stage on which a semiconductor wafer is placed, and the stage is provided with a movable mirror that faces each of the laser beams oscillated from each of the interferometers perpendicularly. A reduction projection exposure apparatus characterized by:
JP2303484A 1990-11-08 1990-11-08 Contracted projection aligner Pending JPH04179115A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2303484A JPH04179115A (en) 1990-11-08 1990-11-08 Contracted projection aligner

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2303484A JPH04179115A (en) 1990-11-08 1990-11-08 Contracted projection aligner

Publications (1)

Publication Number Publication Date
JPH04179115A true JPH04179115A (en) 1992-06-25

Family

ID=17921508

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2303484A Pending JPH04179115A (en) 1990-11-08 1990-11-08 Contracted projection aligner

Country Status (1)

Country Link
JP (1) JPH04179115A (en)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06151277A (en) * 1992-10-30 1994-05-31 Canon Inc Aligner
JPH10270305A (en) * 1997-03-26 1998-10-09 Nikon Corp Method of exposure
WO1999028790A1 (en) * 1997-12-02 1999-06-10 Asm Lithography B.V. Interferometer system and lithographic apparatus comprising such a system
EP1285222A1 (en) * 2000-05-17 2003-02-26 Zygo Corporation Interferometric apparatus and method
US6674510B1 (en) 1999-03-08 2004-01-06 Asml Netherlands B.V. Off-axis levelling in lithographic projection apparatus
US6819433B2 (en) 2001-02-15 2004-11-16 Canon Kabushiki Kaisha Exposure apparatus including interferometer system
US6924884B2 (en) 1999-03-08 2005-08-02 Asml Netherlands B.V. Off-axis leveling in lithographic projection apparatus
KR100578140B1 (en) * 2004-10-07 2006-05-10 삼성전자주식회사 Interferometer System For Measuring Displacement And Exposure System Using The Same
US7116401B2 (en) 1999-03-08 2006-10-03 Asml Netherlands B.V. Lithographic projection apparatus using catoptrics in an optical sensor system, optical arrangement, method of measuring, and device manufacturing method
WO2007097466A1 (en) * 2006-02-21 2007-08-30 Nikon Corporation Measuring device and method, processing device and method, pattern forming device and method, exposing device and method, and device fabricating method
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06151277A (en) * 1992-10-30 1994-05-31 Canon Inc Aligner
JPH10270305A (en) * 1997-03-26 1998-10-09 Nikon Corp Method of exposure
EP1347336A1 (en) * 1997-12-02 2003-09-24 ASML Netherlands B.V. Interferometer system and lithographic apparatus comprising such a system
WO1999028790A1 (en) * 1997-12-02 1999-06-10 Asm Lithography B.V. Interferometer system and lithographic apparatus comprising such a system
US6020964A (en) * 1997-12-02 2000-02-01 Asm Lithography B.V. Interferometer system and lithograph apparatus including an interferometer system
US6674510B1 (en) 1999-03-08 2004-01-06 Asml Netherlands B.V. Off-axis levelling in lithographic projection apparatus
US7206058B2 (en) 1999-03-08 2007-04-17 Asml Netherlands B.V. Off-axis levelling in lithographic projection apparatus
US6882405B2 (en) 1999-03-08 2005-04-19 Asml Netherlands B.V. Off-axis levelling in lithographic projection apparatus
US6924884B2 (en) 1999-03-08 2005-08-02 Asml Netherlands B.V. Off-axis leveling in lithographic projection apparatus
US7019815B2 (en) 1999-03-08 2006-03-28 Asml Netherlands B.V. Off-axis leveling in lithographic projection apparatus
US7202938B2 (en) 1999-03-08 2007-04-10 Asml Netherlands B.V. Off-axis levelling in lithographic projection apparatus
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