DD224448A1 - DEVICE FOR PHOTOLITHOGRAPHIC STRUCTURAL TRANSMISSION - Google Patents

DEVICE FOR PHOTOLITHOGRAPHIC STRUCTURAL TRANSMISSION Download PDF

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Publication number
DD224448A1
DD224448A1 DD26046084A DD26046084A DD224448A1 DD 224448 A1 DD224448 A1 DD 224448A1 DD 26046084 A DD26046084 A DD 26046084A DD 26046084 A DD26046084 A DD 26046084A DD 224448 A1 DD224448 A1 DD 224448A1
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DD
German Democratic Republic
Prior art keywords
photosensitive layer
projection lens
immersion liquid
optically transparent
chamber
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Application number
DD26046084A
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German (de)
Inventor
Rainer Hesse
Wolfgang Gaertner
Karl-Heinz Kuch
Original Assignee
Zeiss Jena Veb Carl
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Application filed by Zeiss Jena Veb Carl filed Critical Zeiss Jena Veb Carl
Priority to DD26046084A priority Critical patent/DD224448A1/en
Publication of DD224448A1 publication Critical patent/DD224448A1/en

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

Abstract

Es wird eine Einrichtung zur fotolithografischen Strukturuebertragung mittels eines Projektionsobjektivs beschrieben. Sie ist zur Erzeugung von Halbleiterstrukturen in einer fotoempfindlichen Schicht einer Halbleiterscheibe nach der Planartechnologie anwendbar. Das Ziel der Erfindung besteht in der Erhoehung der Genauigkeit bei hoher Produktivitaet der Strukturuebertragung. Als Aufgabe steht die Schaffung einer Einrichtung, die bei Verwendung einer Immersionsfluessigkeit Turbulenzen vermeidet und moegliche Verunreinigungen ausserhalb des Schaerfentiefebereiches des Probjektionsobjektivs haelt. Die Erfindung besteht darin, dass zwei mit Immersionsfluessigkeit gefuellte Kammern vorgesehen sind, von denen eine dem Projektionsobjektiv und die zweite dem Substrat zugeordnet sind. Hoechste Aufloesung wird erreicht, wenn zwischen den die Kammern abschliessenden optisch transparenten Medien ebenfalls Immersionsfluessigkeit eingebracht wird. Fig. 1A device for photolithographic structural transmission by means of a projection objective is described. It is applicable to the production of semiconductor structures in a photosensitive layer of a semiconductor wafer according to the planar technology. The object of the invention is to increase the accuracy with high productivity of structural transmission. The object is to provide a device that avoids turbulence when using an immersion liquid and holds possible impurities outside the Schaerfiefiefebereiches of the test lens. The invention consists in that two chambers filled with immersion liquid are provided, one of which is assigned to the projection objective and the second to the substrate. Maximum dissolution is achieved if immersion liquid is also introduced between the optically transparent media closing off the chambers. Fig. 1

Description

Titel der ErfindungTitle of the invention

Einrichtung zur fotolithografischen StrukturübertragungDevice for photolithographic structure transfer

Anwendungsgebiet der ErfindungField of application of the invention

Die Erfindung betrifft eine Einrichtung zur fotolithografischen Strukturübertragung mittels eines Projektionsobjektivs zum Erzeugen eines Belichtungsmusters in einer fotoempfindlichen Schicht eines Substrates. Sie ist insbesondere bei der Erzeugung einer Mikrostruktur in einer fotoempfindlichen Schicht einer Halbleiterscheibe zur Herstellung von Halbleiterstrukturen nach der Planartechnologie anwendbar.The invention relates to a device for photolithographic structure transfer by means of a projection objective for producing an exposure pattern in a photosensitive layer of a substrate. It is particularly applicable to the production of a microstructure in a photosensitive layer of a semiconductor wafer for the production of semiconductor structures according to the planar technology.

Charakteristik der bekannten technischen Lösungen In der veröffentlichten Europäischen Patentanmeldung E? 0 023 231 sind ein Verfahren und eine Vorrichtung zum Kopieren eines Musters auf eine Halbleiterscheibe beschrieben, die zwischen einem Projektionsobjektiv und einer Halbleiterplatte eine Flüssigkeit verwendet, deren Brechungsindex dem des Lacküberzuges der Halbleiterplatte entspricht. Dabei wird die Flüssigkeit ständig ausgetauscht und temperiert und/oder gefiltert. Diese Vorrichtung soll eine Vergrößerung der numerischen Apertur ohne Vergrößerung des Einfallswinkels ermöglichen. Dieses auch aus der Mikroskopie bekannte Prinzip (man vergleiche hierzu: Brockhaus, "ABC der Optik" Brockhaus Verlag Leipzig, 19β1 S. 565 ff.) ist bei Übertragung auf das Gebiet der Mikro- Characteristics of the known technical solutions In the published European patent application E? No. 0 023 231 describes a method and a device for copying a pattern onto a semiconductor wafer which uses a liquid whose refractive index corresponds to that of the lacquer coating of the semiconductor plate between a projection objective and a semiconductor plate. The liquid is constantly exchanged and tempered and / or filtered. This device is intended to allow an enlargement of the numerical aperture without increasing the angle of incidence. This principle, which is also known from microscopy (compare Brockhaus, "ABC der Optik" Brockhaus Verlag Leipzig, 19, pp. 565 ff.), Is applicable in the field of micromachining.

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_ A 11·-· -if. C I ~ *, P» /. Λ O Λ_ A 11 · - · -if. C I ~ *, P »/. Λ O Λ

lithografie mit Nachteilen behaftet. Ein Nachteil besteht darin, daß in der Flüssigkeit, deren Volumen bei dem beschriebenen Verfahren erheblich ist, zwischen Projektionsobjektiv und Halbleiterscheibe bei der Herstellung von hochintegrierten Schaltkreisen infolge der notwendigen Verfahrbewegung der auf einem Koordinatentisch befindlichen Halbleiterscheibe Turbulenzen erzeugt werden. Deshalb wird man, bei heute aus Produktivitätsgründen hohen Verfahrgeschwindigkeiten, endweder Fehler . bei der Strukturübertragung in Kauf nehmen müssen oder man muß das Zeitregime für jeden Belichtungsschritt, um die Zeit für die Beruhigung der Turbulenzen erweitern, was wiederum Produktivitätseinbußen bedeutet.lithography with disadvantages. A disadvantage is that turbulences are generated in the liquid whose volume is significant in the described method , between projection lens and semiconductor wafer in the production of large scale integrated circuits due to the necessary movement of the wafer located on a coordinate table. Therefore, you will end up with errors in today's productivity reasons high traversing speeds. in structure transfer, or to extend the time regime for each exposure step, the turbulence settling time, which in turn means sacrificing productivity.

Ein weiterer Nachteil ist die Handhabbarkeit des zu belichtenden Substrates unter Cleanrοom-Bedingungen. Bei dem Verfahren gemäß obengenannter Patentanmeldung muß nach jeder vollständigen Belichtung einer Halbleiterscheibe diese aus der Flüssigkeit herausgebracht werden und von der Flüssigkeit getrennt werden. Hier besteht zunächst die Gefahr, daß zum Beispiel Staub oder andere unerwünschte Stoffe die Oberfläche des Substrates belegen. Desweiteren läßt sich die Oberfläche des Substrates zum Beispiel zur Vorbereitung auf einen Kontrollschritt infolge der zahlreichen Stufen, Gräben, Erhöhungen etc. nur mit hohem Aufwand von der Flüssigkeit befreien. Weiterhin nachteilig ist die Verwendung eines nach oben offenen Behälters, der die Flüssigkeit beinhaltet. Die daraus resultierende große Flüssigkeitsoberfläche bietet so Eintrittsmöglichkeiten für Verunreinigungen der Flüssigkeit, die erst nach Durchlauf eines Filters beseitigt werden können.Another disadvantage is the handling of the substrate to be exposed under Cleanrοom conditions. In the method according to the above-mentioned patent application, after each complete exposure of a semiconductor wafer, it must be brought out of the liquid and separated from the liquid. At first there is the danger that, for example, dust or other undesirable substances occupy the surface of the substrate. Furthermore, the surface of the substrate, for example, in preparation for a control step as a result of the numerous stages, ditches, elevations, etc. can be rid of the liquid only with great effort. Another disadvantage is the use of an open-topped container containing the liquid. The resulting large liquid surface thus offers opportunities for contamination of the liquid, which can be eliminated only after passing through a filter.

Ziel der ErfindungObject of the invention

Ziel der Erfindung ist die Schaffung einer hochproduktiven und hochgenauen Einrichtung zur fotolithografischen Strukturübertragung.The aim of the invention is to provide a highly productive and highly accurate device for photolithographic structure transfer.

44864486

Darlegung des Wesens der ErfindungExplanation of the essence of the invention

Der Erfindung liegt die Aufgabe zugrunde, eine Einrichtung zur fotolithografischen Strukturübertragung mittels eines Projektionsobjektivs zu entwickeln, in welcher ein geringes Volumen Immersionsflüssigkeit Verwendung findet, so daß keine störenden Turbulenzen in Erscheinung treten und die so aufgebaut ist, daß mögliche Verunreinigungen außerhalb des Schärfentiefebereiches des Projektionsobjektivs liegen und so keine Strukturierungsfehler verursachen. Das zu belichtende Substrat soll so handhabbar sein, daß die fotoempfindliche Schicht des Substrats in keiner Weise beeinträchtigt wird.The invention has for its object to develop a device for photolithographic structure transfer by means of a projection lens, in which a small volume immersion liquid is used, so that no disturbing turbulence appear in appearance and which is constructed so that possible impurities are outside the depth of field of the projection lens and so do not cause structuring errors. The substrate to be exposed should be so manageable that the photosensitive layer of the substrate is in no way impaired.

Erfindungsgemäß wird die Aufgabe dadurch gelöst, daß bei einer Einrichtung zur fotolithografischen Strukturübertragung mittels eines Projektionsobjektivs zum Erzeugen eines Belichtungsmusters in einer fotoempfindlichen Schicht eines parallel zur Bildebene schrittweise bewegten und auswechselbaren Substrats, wobei im optischen Strahlengang zwischen der fotoempfindlichen Schicht und der dieser zugewandten Grenzfläche des Produktionsobjektivs eine Immersionsflüssigkeit annähernd gleichen Brechwertes wie der der lichtempfindlichen Schicht Verwendung findet,im optischen Strahlengang zwischen Projektionsobjektiv und der fotoempfindlichen Schicht des Substrats zwei voneinander getrennte, gegen die Atmosphäre abgeschlossene, relativ zueinander bewegbare und mit Immersionsflüssigkeit gefüllte Kammern vorgesehen sind, wobei die erste Kammer, die mit dem Projektionsobjektiv fest verbunden ist, von der der fotoempfindlichen Schicht zugewandten Grenzfläche des Projektionsobjektivs und von einem optisch transparenten Medium begrenzt wird, und die zweite Kammer, die mit dem Substrat verbunden ist, von der fotoempfindlichen Schicht des Substrats und von einem weiteren optisch transparenten Medium begrenzt wird.According to the invention the object is achieved in that in a device for photolithographic structure transfer by means of a projection lens for generating an exposure pattern in a photosensitive layer of a parallel to the image plane gradually moving and interchangeable substrate, wherein in the optical path between the photosensitive layer and this facing interface of the production lens an immersion liquid of approximately the same refractive index as the photosensitive layer is used, in the optical beam path between the projection lens and the photosensitive layer of the substrate two separate, sealed against the atmosphere, relatively movable and filled with immersion liquid chambers are provided, wherein the first chamber is fixedly connected to the projection lens, from the photosensitive layer facing the interface of the projection lens and v is bounded on an optically transparent medium, and the second chamber, which is connected to the substrate, is bounded by the photosensitive layer of the substrate and by another optically transparent medium.

44864486

Als optisch transparente Medien lassen sich vorteilhaft Glasplatten und/oder Folien einsetzen.As optically transparent media, it is advantageous to use glass plates and / or foils.

Zur.Verringerung des Volumens an bewegter Immersionsflüssigkeit und damit zur Verringerung von Turbulenzen in der Immersionsflüssigkeit ist es von Vorteil, wenn mindestens eine Kammer mit einer Einrichtung zur Veränderung des Druckes der Immersionsflüssigkeit in Verbindung steht und wenn das optisch transparente Medium dieser Kammer senkrecht zur Bildebene bewegbar angeordnet ist.To reduce the volume of moving immersion liquid and thus to reduce turbulence in the immersion liquid, it is advantageous if at least one chamber is connected to a device for changing the pressure of the immersion liquid and if the optically transparent medium of this chamber is movable perpendicular to the image plane is arranged.

Zur weiteren Erhöhung der Auflösung des Projektionsobjektivs sowie zur Verringerung von Strukturübertragungsfehlern kann man zwischen den die Kammern begrenzenden optisch transparenten Medien ebenfalls Immersionsflüssigkeit einbringen.To further increase the resolution of the projection lens and to reduce structural transmission errors can also introduce immersion liquid between the chambers bounding the optically transparent media.

Ausführungsbeispieleembodiments

In der Zeichnung sind Ausführungsbeispiele der Erfindung dargestellt, und zwar zeigen:In the drawings, embodiments of the invention are shown, in which:

Pig. 1 ein Ausführungsbeispiel der erfindungsgemäßen Einrichtung mit zwei Glasplatten als Abschluß der Kammern,Pig. 1 shows an embodiment of the device according to the invention with two glass plates as the end of the chambers,

Fig. 2 ein Ausführungsbeispiel mit einer mittels Ringmembran bewegbar angeordneten Glasplatte, Fig. 3 ein Ausführungsbeispiel, wo die Kammer vor dem Projektionsobjektiv mit einer Folie abgeschlossen ist.2 shows an exemplary embodiment with a glass plate movably arranged by means of a ring membrane, FIG. 3 shows an embodiment where the chamber is closed with a foil in front of the projection objective.

Die erfindungsgemäße Einrichtung besteht nach Fig. 1 aus einem gestellfesten Projektionsobjektiv 1. Mit dem Projektionsobjektiv 1 fest verbunden ist eine Kammer 2, die restlos mit Immersionsflüssigkeit 3 gefüllt ist. Die Kammer 2 ist gegen die Atmosphäre abgeschlossen und wird im optischen Strahlengang von der der fotoempfindlichen Schicht zugewandten Grenzfläche 4 des Projektionsobjektivs 1 und von einer optisch transparenten, planparallelen Glasplatte 5 begrenzt. Desweiteren besteht dieThe device according to the invention consists of FIG. 1 of a frame-mounted projection lens 1. With the projection lens 1 is firmly connected to a chamber 2, which is completely filled with immersion liquid 3. The chamber 2 is sealed off from the atmosphere and is delimited in the optical beam path by the interface 4 of the projection lens 1 facing the photosensitive layer and by an optically transparent, plane-parallel glass plate 5. Furthermore, there is the

1Λ861Λ86

Einrichtung aus einer zweiten Kammer 6, die mit dem zu belichtenden Substrat zum Beispiel mit einer Halbleiterscheibe 7 verbunden ist. Diese zweite Kammer 6 wird unter anderem von der fotoempfindlichen Schicht 8 der Halbleiterscheibe 7 und von einer weiteren optisch transparenten, planparallelen Glasplatte 9 begrenzt. In der zweiten Kammer 6 befindet sich ebenfalls Immer^ sionsflüssigkeit 10. Die zweite Kammer 6 einschließlich der Glasplatte 9 und der Halbleiterscheibe 7 befinden sich auf der Tischplatte 11 eines Koordinatentisches, der über Bewegungseinrichtungen' 12 eine Relativbewegung der Halbleiterscheibe 7 parallel und senkrecht zur Bildebene 13 bewirkt. Zur Erhöhung der Auflösung befindet sich zwischen den beiden die Kammern 2, 6 begrenzenden Glasplatten 5 und 9 weitere Immersionsflüssigkeit 14, deren Oberfläche 15 in einem Behälter 16 höher liegt, als die der Halbleiterscheibe zugewandte Fläche 17 der Glasplatte Zwischen der Grenzfläche 4 des Projektionsobjektivs 1 und der fotoempfindlichen Schicht 8 der Halbleiterscheibe 7 verläuft der optische Strahlengang somit nur in Medien annähernd gleichen Brechwertes wie der der fotoempfindlichen Schicht, wenn man voraussetzt, daß die Brechwerte der Immersionsflüssigkeiten 3, 10 und 14 und der Glasplatten 5 und 9 annähernd übereinstimmen. Will man eine weitere Reduzierung des bewegten Volumens an Immersipnsflüssigkeit 14 erreichen, das heißt auch eine Reduzierung der darin auftretenden Turbulenzen, dann kann man den Abstand zwischen den beiden zueinander bewegten Kammern 2 und 6 minimal auslegen. Vorteilhaft lassen sich hier zum Beispiel an Kammer 2, wie in Figur 2, Glasplatten 18 einsetzen, die in der Kammer mittels einer Ringmembran senkrecht zur Bildebene 13 beweglich angeordnet ist. Den gleichen Zweck soll die Folie 20 in Figur 3 erfüllen. Die Kammer 2 steht in diesen Fällen über einem Anschlußstutzen 21 mit einerDevice comprising a second chamber 6, which is connected to the substrate to be exposed, for example with a semiconductor wafer 7. This second chamber 6 is bounded, inter alia, by the photosensitive layer 8 of the semiconductor wafer 7 and by a further optically transparent, plane-parallel glass plate 9. The second chamber 6 including the glass plate 9 and the semiconductor wafer 7 are located on the table top 11 of a coordinate table, the movement of means 12 relative movement of the semiconductor wafer 7 parallel and perpendicular to the image plane 13th causes. To increase the resolution is between the two the chambers 2, 6 delimiting glass plates 5 and 9 more immersion liquid 14, the surface 15 is higher in a container 16, as the wafer facing surface 17 of the glass plate between the interface 4 of the projection lens 1 and Thus, the photosensitive layer 8 of the semiconductor wafer 7, the optical beam path only in media of approximately the same refractive power as that of the photosensitive layer, assuming that the refractive indices of Immersionsflüssigkeiten 3, 10 and 14 and the glass plates 5 and 9 approximately match. If you want to achieve a further reduction of the moving volume of Immersipnsflüssigkeit 14, that is also a reduction of the turbulence occurring therein, then you can interpret the distance between the two mutually moving chambers 2 and 6 minimal. Advantageously, glass panels 18, for example, can be used here on chamber 2, as in FIG. 2, which is arranged movably in the chamber by means of a ring membrane perpendicular to the image plane 13. The same purpose is to fulfill the film 20 in Figure 3. The chamber 2 is in these cases via a connecting piece 21 with a

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Einrichtung 22 zur Veränderung des Druckes der Immersionsflüssigkeit in Verbindung. Während der Belichtung der fotoempfindlichen Schicht, 8 wird die Glasplatte 18 durch einen erhöhten Druck in der Kammer 2 in Richtung Bildebene 13 bewegt. Während der Bewegung der Tischplatte 11 zur Vermeidung von Beschädigungen der Glasplatte 18 oder Folie 20 wird durch Druckminderung der Immersionsflüssigkeit 3 in Kammer 2 die Glasplatte 18 oder Polie 20 von der sich bewegenden Glasplatte 9 wegbewegt.Device 22 for changing the pressure of the immersion liquid in conjunction. During the exposure of the photosensitive layer 8, the glass plate 18 is moved by an increased pressure in the chamber 2 in the direction of the image plane 13. During movement of the table top 11 to avoid damage to the glass plate 18 or film 20, the glass plate 18 or Polie 20 is moved away from the moving glass plate 9 by reducing the pressure of the immersion liquid 3 in chamber 2.

Die im Ausführungsbeispiel beschriebene Einrichtung läßt sich auch ohne Immersionsflüssigkeit 14 beschreiben· In diesem Falle hätte man mit keinerlei Turbulenzen zu rechnen. Die Vorteile der erfindungsgemäßen Einrichtung bleiben erhalten, weil der Abstand beider Kammern 2 und 6 minimal gehalten werden kann und die gegen Verunreinigungen (Staub u.a.) empfindlichen Flächen außerhalb des Schärfentiefenbereichs des Projektionsobjektivs 7 liegen.The device described in the exemplary embodiment can also be described without immersion liquid 14. In this case, no turbulence should be expected. The advantages of the device according to the invention are retained because the distance between the two chambers 2 and 6 can be kept to a minimum and the surfaces which are sensitive to contaminants (dust, etc.) are outside the depth of field of the projection objective 7.

Claims (4)

ErfindungξanspruchErfindungξanspruch 1. Einrichtung zur fotolithografischen Strukturübertragung mittels- eines Projektionsobjektivs zum Erzeugen eines Belichtungsmusters in einer fotoempfindlichen Schicht eines parallel zur Bildebene schrittweise bewegten und auswechselbaren Substrats, wobei im optischen Strahlengang zwischen der fotoempfindlichen Schicht und der dieser zugewandten Grenzfläche des Projektionsobjektivs eine Immersionsflüssigkeit annähernd gleichen Brechwertes wie der der lichtempfindlichen Schicht Verwendung findet, dadurch gekennzeichnet, daß im optischen Strahlengang zwischen Projektionsobjektiv und der fotoempfindlichen Schicht des Substrats zwei voneinander getrennte, gegen die Atmosphäre abgeschlossene, relativ zueinander bewegbare und mit Immersionsflüssigkeit gefüllte Kammern vorgesehen sind, wobei die erste Kammer, die mit dem Projektionsobjektiv fest verbunden ist, von der der fotoempfindlichen Schicht zugewandten Grenzfläche des Projektionsobjektivs und von einem optisch transparenten Medium begrenzt wird und die zweite Kammer, die mit dem Substrat verbunden ist, von der fotoempfindlichen Schicht des Substrats und von einem v/eiteren optisch transparenten Medium begrenzt wird. 1. A device for photolithographic structure transmission by means of a projection lens for generating an exposure pattern in a photosensitive layer of a parallel to the image plane gradually moving and interchangeable substrate, wherein in the optical beam path between the photosensitive layer and this facing interface of the projection lens an immersion liquid of approximately the same refractive power as the the photosensitive layer is used, characterized in that in the optical beam path between the projection lens and the photosensitive layer of the substrate two separate, sealed against the atmosphere, relatively movable and filled with immersion liquid chambers are provided, wherein the first chamber, with the projection lens is firmly connected, from the photosensitive layer facing the interface of the projection lens and of an optically transparent Me is limited and the second chamber, which is connected to the substrate, of the photosensitive layer of the substrate and of a v / eiteren optically transparent medium is limited. 2. Einrichtung nach Punkt 1, dadurch gekennzeichnet, daß die optisch transparenten" Medien Glasplatten und/oder Folien sind.2. Device according to item 1, characterized in that the optically transparent "media glass plates and / or films. 3. Einrichtung nach Punkt 1 und 2, dadurch gekennzeichnet, daß mindestens eine Kammer mit einer Einrichtung zur Veränderung des Druckes der Immersionsflüssigkeit in Verbindung steht, und daß das optisch transparente Medium dieser Kammer senkrecht zur Bildebene bewegbar angeordnet ist.3. Device according to item 1 and 2, characterized in that at least one chamber is connected to a device for changing the pressure of the immersion liquid, and in that the optically transparent medium of this chamber is arranged perpendicular to the image plane movable. 4. Einrichtung nach Punkt 1 bis 3» dadurch gekennzeichnet, daß sich zwischen den die Kammern "begrenzenden optisch transparenten Medien ebenfalls Immersionsflüssigkeit befindet»4. Device according to item 1 to 3 »characterized in that between the chambers" limiting optically transparent media also Immersionsflüssigkeit is located » Hierzu 3 Blatt Zeichnungen.For this 3 sheets of drawings.
DD26046084A 1984-03-01 1984-03-01 DEVICE FOR PHOTOLITHOGRAPHIC STRUCTURAL TRANSMISSION DD224448A1 (en)

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EP1420302A1 (en) 2002-11-18 2004-05-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1477856A1 (en) * 2003-05-13 2004-11-17 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2004107048A2 (en) * 2003-05-30 2004-12-09 Carl Zeiss Smt Ag Microlithographic projection exposure system
EP1510871A3 (en) * 2003-08-29 2005-04-06 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1524557A1 (en) * 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1420299A3 (en) * 2002-11-12 2005-08-10 ASML Netherlands B.V. Immersion lithographic apparatus and device manufacturing method
WO2005076084A1 (en) * 2004-02-09 2005-08-18 Carl Zeiss Smt Ag Projection objective for a microlithographic projection exposure apparatus
EP1420298A3 (en) * 2002-11-12 2005-10-12 ASML Netherlands B.V. Immersion lithographic apparatus and device manufacturing method
WO2005119742A1 (en) 2004-06-04 2005-12-15 Nikon Corporation Exposure apparatus, exposure method, and device producing method
WO2005122220A1 (en) 2004-06-10 2005-12-22 Nikon Corporation Exposure apparatus, exposure method, and device producing method
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WO2006009573A1 (en) * 2004-06-17 2006-01-26 Nikon Corporation Fluid pressure compensation for immersion lithography lens
US7012673B2 (en) 2003-06-27 2006-03-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006043457A1 (en) 2004-10-18 2006-04-27 Nikon Corporation Projection optical system, exposure system, and exposure method
NL1030502C2 (en) * 2004-12-10 2006-08-11 Taiwan Semiconductor Mfg Immersion optical projection system used in integrated circuit chip manufacture, has wafer-side fluid provided between transparent plate and wafer, which is not fluidly connected to lens-side fluid
EP1703311A1 (en) * 2004-01-06 2006-09-20 Olympus Corporation Immersion objective lens, fluorometric analyzer, and inverted microscope
US7242455B2 (en) 2002-12-10 2007-07-10 Nikon Corporation Exposure apparatus and method for producing device
US7268854B2 (en) 2003-02-26 2007-09-11 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7271878B2 (en) * 2004-04-22 2007-09-18 International Business Machines Corporation Wafer cell for immersion lithography
US7321419B2 (en) 2003-06-19 2008-01-22 Nikon Corporation Exposure apparatus, and device manufacturing method
US7326522B2 (en) 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
US7327435B2 (en) 2003-04-11 2008-02-05 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US7339650B2 (en) 2003-04-09 2008-03-04 Nikon Corporation Immersion lithography fluid control system that applies force to confine the immersion liquid
US7345742B2 (en) 2003-04-10 2008-03-18 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
US7359034B2 (en) 2003-05-15 2008-04-15 Nikon Corporation Exposure apparatus and device manufacturing method
US7379158B2 (en) 2002-12-10 2008-05-27 Nikon Corporation Exposure apparatus and method for producing device
US7379155B2 (en) 2004-10-18 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7388649B2 (en) 2003-05-23 2008-06-17 Nikon Corporation Exposure apparatus and method for producing device
EP1494075B1 (en) * 2003-06-30 2008-06-25 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
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