JPH10135099A - Exposure device and exposure method - Google Patents

Exposure device and exposure method

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Publication number
JPH10135099A
JPH10135099A JP8283678A JP28367896A JPH10135099A JP H10135099 A JPH10135099 A JP H10135099A JP 8283678 A JP8283678 A JP 8283678A JP 28367896 A JP28367896 A JP 28367896A JP H10135099 A JPH10135099 A JP H10135099A
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Prior art keywords
line width
exposure
wafer
photoresist film
pattern
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JP8283678A
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Japanese (ja)
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Ikuo Yoshihara
郁夫 吉原
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Sony Corp
ソニー株式会社
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Priority to JP8283678A priority Critical patent/JPH10135099A/en
Publication of JPH10135099A publication Critical patent/JPH10135099A/en
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Abstract

PROBLEM TO BE SOLVED: To provide an exposure device for preventing the occurrence of the variation of line width on a wafer face owing to the difference of photoresist film thickness on the wafer face and to provide the exposure method of a semiconductor wafer.
SOLUTION: The exposure device 10 has a conventional exposure device 12, a first calculation means 14 and a second calculation means 16. The first calculation means 14 calculates predicted line width in an arbitrarily selected position in a sample wafer, based on a relation that the difference between preset line width and formed line width in the wafer face. Namely, the line width deviation distributes, according to a normalized distribution curve with respect to the distance from the wafer center and on line width measurement values measured in measurement positions, which are arbitrarily set along one diameter direction of the sample wafer and the direction orthogonal to the diameter direction. The second calculation means 16 calculates a necessary exposure value at the selected position, so that preset line width can be obtained based on predicted line width in accordance with the correlation relation of line width and the exposure value.
COPYRIGHT: (C)1998,JPO

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は、露光装置に関し、 BACKGROUND OF THE INVENTION The present invention relates to an exposure apparatus,
更に詳細には、形成線幅がウエハ面内で均一になるようにパターンを露光できるようにした露光装置に関するものである。 More particularly, formation line width is related to an exposure apparatus capable of exposing the pattern to be uniform in the wafer plane.

【0002】 [0002]

【従来の技術】半導体装置の製造において、フォトリソグラフィによりパターニングする際、フォトレジスト膜上に露光して形成したパターン線幅は、半導体装置の動作特性を左右する極めて重要な因子である。 In the manufacture of semiconductor devices, in patterning by photolithography, a photoresist film pattern line width formed by exposure on is a critical factor affecting the operating characteristics of the semiconductor device. 特に、MO In particular, MO
Sトランジスタのゲート長は、半導体装置の動作速度を決定する重要な因子の一つであるので、半導体装置の設計では、トランジスタ能力とゲート長との関係から十分に吟味されて設定される。 Gate length of the S transistor because it is one of the important factors determining the operating speed of the semiconductor device, the design of the semiconductor device is set are vetted from the relationship between the transistor capability and gate length. 半導体装置の高集積化及び動作高速化の要求に伴い、ゲート長はデザインルールの微細化に従って微細化されると共に、フォトリソグラフィ技術の適用に当たり、ゲート長のばらつき割合が大きくなる一方、ゲート長のばらつきを抑制することが益々難しくなっている。 With the demand for higher integration and operating speed semiconductor device, the gate length is miniaturized in accordance with miniaturization of the design rule, In applying photolithography technology, while the variation ratio of the gate length increases, the gate length suppressing variation becomes increasingly difficult. ゲート長の寸法精度のばらつきが大きいと、半導体装置の高速化が実現せず、製品歩留りが低下するので、ゲート長のばらつきを抑制することが、半導体装置の高速化を図る上で、益々、重要になっている。 When variations in the dimensional accuracy of the gate length is large, does not achieve high speed of a semiconductor device, since the product yield is lowered, to suppress a variation in gate length, in terms of increasing the speed of a semiconductor device, more, It has become important. そこで、従来、反射防止膜を設けたりてゲート長のばらつきを軽減したり、或いは光の近接効果コントロール技術を用いてゲート長のばらつきを軽減したりして来た。 Therefore, conventionally, or reduce variation in the gate length Te or an antireflection film, or came or to reduce variation in the gate length using the proximity effect control technology of light.

【0003】 [0003]

【発明が解決しようとする課題】しかし、上述の従来の方法では、ゲート長のばらつきを抑制するのに限界があり、そのため製品のMOSトランジスタの性能、特に動作速度や消費電力にばらつきが生じ、製品歩留りを向上させることが難しかった。 [SUMMARY OF THE INVENTION However, in the conventional method described above, there is a limit to suppress the variation in the gate length, the performance of the MOS transistor therefore product, variations especially the operation speed and power consumption occurs, it is difficult to improve the product yield. ゲート長等の線幅のばらつきは、3種類に大別でき、それぞれ以下の原因に起因すると考えられている。 Variations in line width of the gate length or the like, can be divided into three types, respectively attributed to the following reasons:. 1)ウエハ間、ウエハロット間のばらつき この種類のばらつきは、最適露光条件の経時的変化及びフォトレジスト膜厚の面内変動及びロット間変動によるものと推定されている。 1) between the wafers, variations variation of this type of inter-wafer lots is estimated to be due to change over time and in-plane variation and lot-to-lot variation of the photoresist film thickness of optimum exposure conditions. 2)ウエハ面内のばらつき この種類のばらつきは、フォトレジスト膜厚の面内変動及び現像液の供給量の変動によるもの、更にはウエハのフォトレジスト膜表面の高低差によるものと推定されている。 Variations variations of this type of the 2) the wafer surface, due to variations in the supply amount of the in-plane fluctuation and developer of the photoresist film thickness is further estimated that by the height difference between the surface of the photoresist film of the wafer . 3)ショット内のばらつき 露光フィールド内の光の明暗、レンズ歪み及びパターン歪みによるものと推定されている。 3) light brightness of the variations exposure field in the shot, are estimated to be due to lens distortion and pattern distortion. これらの3種類の線幅のばらつきの中で、フォトレジスト膜厚の変動によるウエハ面内の線幅変動が、ばらつきとして最も顕著なものの一つであり、しかも従来の技術では克服することが難しいものである。 Among variations of these three line width, the line width variation in the wafer surface due to variations in the photoresist film thickness is one of the most prominent as variations, yet it is difficult to overcome in the prior art it is intended.

【0004】そこで、本発明の目的は、ウエハ面内のフォトレジスト膜厚の差に起因するウエハ面内の線幅のばらつきの発生を防止するようにした露光装置と、半導体ウエハの露光方法とを提供することである。 The object of the present invention, an exposure apparatus adapted to prevent the occurrence of variations in line width over the wafer due to the difference of the photo resist film thickness in the wafer plane, and the exposure method of a semiconductor wafer it is to provide a.

【0005】 [0005]

【課題を解決するための手段】本発明者は、線幅のばらつきの原因を調査する過程で、ウエハ上のフォトレジスト膜の膜厚が、ウエハ面内で一様でなく、ウエハの中央部で薄く、周辺部に行くにつれて徐々に厚くなっているにもかかわらず、従来の露光方法では、各ショットについて、ウエハ面内のショット位置に関係なく同じ露光時間で露光しているから、周辺部のチップの線幅長が中央部より太くなることに注目し、露光量をフォトレジスト膜の膜厚に応じて変化させることを研究した。 Means for Solving the Problems The present inventors have in the course of investigating the cause of the variations in line width, the film thickness of the photoresist film on the wafer, not uniform in the wafer plane, the central portion of the wafer in thin, despite gradually thicker as toward the peripheral portion, in the conventional exposure method, for each shot, because they were exposed at the same exposure time regardless of the shot position of the wafer surface, the peripheral portion line width length of chips is noted that becomes thicker than the central portion, and the exposure amount was studied varying in accordance with the film thickness of the photoresist film.

【0006】そして、フォトレジスト膜の膜厚に従って線幅長が異なることから、ウエハ面内での設定線幅と形成線幅との差、即ち線幅偏差がウエハ中心からの距離に対して正規分布曲線に従って分布するという経験則が成立すること、及び、他の条件が同じであれば、露光量、 [0006] Then, regular since the line width length in accordance with the film thickness of the photoresist film are different, the difference between the set line width and form line width at the wafer plane, i.e. with respect to the distance of the line width deviation from the wafer center the rule of thumb that distributed according to the distribution curve is established, and, if the other conditions are the same, the exposure amount,
例えば露光時間と線幅とは一定の相関関係にあることに気が付き、確認実験を重ねて、本発明を完成するに到った。 For example exposure time and the line width noticed that in certain correlation, overlapping the confirmation experiment, and have completed the present invention. 尚、本明細書で、線幅とは、ポジ型フォトレジスト膜を使用して配線形成する場合、露光、現像した後に残留したフォトレジスト膜のパターン幅を言い、コンタクト形成の場合、露光、現像した後に下地層を露出させた溝幅を言う。 In the present specification, the line width, if the wiring formed using the positive photoresist film, said exposure, the pattern width of the photoresist film remaining after development, in the case of contact formation, exposure, development It was referred to the groove width to expose the underlying layer after.

【0007】上記目的を達成するために、以上の知見に基づき、本発明に係る露光装置は、ウエハ上のフォトレジスト膜にパターンを露光する露光装置において、ウエハ面内での設定線幅と形成線幅との差、即ち線幅偏差がウエハ中心からの距離に対して正規分布曲線に従って分布するという関係と、及び、所定の露光、及び現像条件で露光し、現像した試料ウエハの一の直径方向及びその直径方向に直交する方向に沿って設定した複数の測定位置で測定したパターンの線幅測定値とに基づき、試料ウエハの任意に選定した位置での予測線幅を算出する第1 [0007] To achieve the above object, based on the above findings, the exposure apparatus according to the present invention, an exposure apparatus for exposing a pattern on the photoresist film on the wafer, and setting line width at the wafer plane formed a relationship that a difference between the line width, i.e. the line width deviation is distributed according to a normal distribution curve with respect to the distance from the wafer center, and a predetermined exposure, and exposure with development conditions, one radial of the developed sample wafer the calculated direction and based on the line width measured value of the pattern measured in the diameter direction into a plurality of measurement positions set along the direction perpendicular to the predicted lines width at the selected position in any sample wafer 1
の算出手段と、第1の算出手段で算出した予測線幅に基づいて線幅と露光量との相関関係に従って、選定位置で設定線幅を得るような、選定位置での所要露光量を算出する第2の算出手段とを備えていることを特徴としている。 Calculating a calculation unit, in accordance with the correlation between the amount of exposure and the line width based on expected line width calculated by the first calculating means, so as to obtain a setting line width selection position, a required amount of exposure selection position of It is characterized in that it comprises a second calculation means for.

【0008】本発明では、試料ウエハの線幅を測定する測定位置が等間隔になるように測定位置を設定することは必ずしも必要でなく、後述するように、間隔が異なっていても良い。 [0008] In the present invention, the measurement position for measuring the line width of the sample wafer to set the measurement position so that the equal intervals are not necessarily required, as described below, may have different intervals. また、使用する線幅と露光量と相関関係は、予め実験等で求められている関係である。 Moreover, the correlation between the line width and the exposure amount to be used is a relationship that is determined in advance by experiments or the like. 第1及び第2の算出手段には、既知の演算装置、例えば小型コンピュータを使用できる。 The first and second calculating means, known computing devices, e.g., a small computer can be used. 露光量は、線幅長と一対一の関係にある物理量であって、例えば、露光装置が、縮小投影露光装置の場合には、所要露光量が露光時間で規定され、直接描画法による電子ビーム露光装置の場合には、 Exposure amount, a physical amount having a line width one-to-one relationship with length, for example, exposure apparatus, in the case of reduction projection exposure apparatus, a required amount of exposure is defined by the exposure time, the electron beam by direct drawing method in the case of the exposure apparatus,
所要露光量が露光時間及び/又は露光エネルギーで規定される。 Required exposure amount is defined by the exposure time and / or exposure energy.

【0009】フォトレジスト膜を塗布する際に同じロットに属したウエハは、通常、同じフォトレジスト膜の膜厚分布を有する。 [0009] wafer belonging to the same lot at the time of applying the photoresist film is, usually, has a film thickness distribution of the same photoresist film. 本発明者は、この経験則に基づき、上述の露光装置を使用した露光方法を開発した。 The present inventors, based on the empirical rule developed an exposure method using the above exposure apparatus. 本発明に係る露光方法は、上述の露光装置を使用して、ウエハ上のフォトレジスト膜にパターンを露光する露光方法において、フォトレジスト膜を塗布した同じロットに属する複数枚のウエハから一枚のウエハを選定して試料ウエハとし、試料ウエハ上のフォトレジスト膜に所定の露光条件でパターンを露光し、現像する工程と、試料ウエハの一の直径方向及びその直径方向に直交する方向に沿って設定した複数の測定位置でパターンの形成線幅を測定する工程と、ウエハ面内での設定線幅と形成線幅との差、 Exposure method according to the present invention uses the above exposure apparatus, an exposure method for exposing a pattern on the photoresist film on the wafer, the one from the plurality of wafers belonging to the same lot which a photoresist film is applied select a wafer as a sample wafer, exposing a pattern with a predetermined exposure conditions in the photoresist film on the sample wafer, a step of developing, along a direction perpendicular to the one radial direction and the diameter direction of the sample wafer difference measuring a formation line width of the pattern at a plurality of measurement positions the set, the set line width and form line width at the wafer plane,
即ち線幅偏差がウエハ中心からの距離に対して正規分布曲線に従って分布するという関係に従って、線幅測定値に基づき、試料ウエハの任意に選定した位置での予測線幅を算出する工程と、次いで、線幅と露光量と相関関係に従って予測線幅に基づき、選定位置で設定線幅を得るような、選定位置での所要露光量を算出する工程と、試料ウエハ以外のウエハのフォトレジスト膜上であって、 That according to the relationship linewidth deviations are distributed according to a normal distribution curve with respect to the distance from the wafer center based on the line width measured values, calculating a prediction line width at any to the selected position of the sample wafer, followed by based on the expected line width in accordance with the correlation between the line width exposure, so as to obtain a setting line width selection position, calculating a required amount of exposure at selected positions, on the photoresist film on the wafer other than the sample wafer there is,
試料ウエハ選定位置と同じ位置に算出した所要露光量でパターンを露光する工程とを備えていることを特徴としている。 We and a step of exposing a pattern at a desired exposure amount calculated in the same position as the sample wafer selected position are characterized in.

【0010】本発明の露光方法は、その適用に制限はないが、特に、フォトリソグラフィによりパターニングしてMOSトランジスタのゲートを形成する際に好適に適用できる。 [0010] The exposure method of the present invention is not limited in its application, in particular, can be suitably applied in forming the gate of the MOS transistor is patterned by photolithography.

【0011】 [0011]

【発明の実施の形態】以下に、添付図面を参照し、実施例を挙げて本発明の実施の形態を具体的かつ詳細に説明する。 DETAILED DESCRIPTION OF THE INVENTION Hereinafter, with reference to the accompanying drawings, of examples describing the embodiments of the present invention specifically and in detail. 露光装置の実施例本実施例は、本発明に係る露光装置の実施例であって、 Example embodiment of the exposure apparatus is an embodiment of an exposure apparatus according to the present invention,
本発明を縮小投影露光装置に適用した例である。 It is an example applied to a reduction projection exposure apparatus of the present invention. 図1は本実施例の露光装置の構成を示すブロック図である。 Figure 1 is a block diagram showing the arrangement of an exposure apparatus of this embodiment. 本実施例の露光装置10は、従来と同じ構成の縮小投影露光装置12(以下、簡単にステッパ12と言う)と、第1算出手段14と、第2算出手段16とを備えている。 The exposure apparatus 10 of this embodiment, a conventional a reduction projection exposure apparatus having the same configuration 12 (hereinafter, simply referred to as stepper 12) and includes a first calculation unit 14, and a second calculating unit 16.

【0012】形成されたパターンの予測線幅偏差と設定線幅とが判れば、パターンの予測線幅を求めることができる。 [0012] expected line width deviation of the formed pattern and the setting line width is known, it is possible to determine the expected line width of the pattern. そこで、第1算出手段14は、ウエハ面内での設定線幅と形成線幅との差、即ち線幅偏差は、ウエハ中心からの距離に対して正規分布曲線に従って分布するという経験則と、及び、所定の露光、現像条件で露光し、現像した試料ウエハの一の直径方向及びその直径方向に直交する方向に沿ってほぼ等間隔に設定した複数の測定位置で測定した線幅測定値とに基づき、試料ウエハの任意に選定した位置での予測線幅を算出する。 Therefore, the first calculating means 14, the difference between the set line width and form line width at the wafer plane, i.e. the line width deviation, and the empirical rule that distributed according to a normal distribution curve with respect to the distance from the wafer center, and, a predetermined exposure, and exposure with a developing condition, a line width measured value measured in a plurality of measurement positions set at substantially equal intervals along a direction perpendicular to the one radial direction and the diameter direction of the developing sample wafer the basis to calculate the expected line width at arbitrarily selected locations of the sample wafer. 図2は、試料ウエハ上に実際に形成されたパターンの形成線幅をオリエンテーション・フラットに平行な直径に沿った測定位置P1からP5で測定した線幅測定値の分布を示す。 Figure 2 shows the actually formed pattern distribution of the line width measured value measured in the measuring position P1 from P5 along a parallel diameter formed linewidth orientation flat on the sample wafer. 図3は、試料ウエハ上に実際に形成されたパターンの形成線幅をオリエンテーション・フラットに直交する直径に沿った測定位置P1´からP5´で測定した線幅測定値の分布を示す。 Figure 3 shows the distribution of actually formed pattern line width measurement value measured by P5' formation line width from the measurement position P1' along a diameter perpendicular to the orientation flat of on the sample wafer. 図2及び図3で、18は試料ウエハを示す。 2 and 3, 18 denotes a sample wafer.

【0013】露光量、例えば露光時間と線幅とは、一定の相関関係を有し、例えば、図4に示すようなグラフで表される。 [0013] exposure, for example, the exposure time and the line width, has a certain correlation, for example, represented by the graph shown in FIG. 第2算出手段16は、図4に示すような線幅と露光時間と相関関係に従って、第1算出手段14で求めた予測線幅に基づき、選定位置で設定線幅を得るような、選定位置での所要露光量を算出する。 Second calculation means 16, according to the correlation between the line width as shown in FIG. 4 and exposure time, based on the expected line width obtained by the first calculating means 14, so as to obtain a setting line width selection position, the selection position calculating a required amount of exposure. 例えば、図3 For example, Figure 3
の星印の位置では、第2算出手段14により予測線幅が0.38μm と算出でき、従って、図4から所要露光時間は380msecになる。 The position of the asterisk, expected line width by the second calculating means 14 calculated to 0.38 .mu.m, therefore, required exposure time from 4 becomes 380Msec. 一方、図3の中央部P3の線幅は0.35μm で、図4からその所要露光時間は400 On the other hand, the line width of the central portion P3 of FIG. 3 is a 0.35 .mu.m, the required exposure time from 4 400
msecと算出できる。 msec and can be calculated. よって、星印の位置で線幅を0.3 Thus, the line width at the position of the Stars 0.3
5μm にするのに必要な所要露光時間は、400msec+ The required exposure time needed to 5μm, 400msec +
(400msec−380msec)=420msecと算出できる。 It can be calculated as (400msec-380msec) = 420msec.

【0014】本実施例では、露光装置本体は、ステッパであったが、ステッパに代えて直接描画法を使用した電子ビーム露光装置を使用することもできる。 [0014] In this embodiment, the exposure apparatus main body has been a stepper, it is also possible to use an electron beam exposure apparatus using a direct drawing method instead of the stepper. その場合には、露光量を規定するものとして、露光時間に代えて、 In this case, as to define an exposure amount, instead of the exposure time,
露光時間(スキャン速度)及び/又は露光エネルギーを使用する。 Using the exposure time (scan rate) and / or exposure energy.

【0015】 露光方法の実施例上述の露光装置10を使用して、MOSトランジスタのゲート電極パターンを形成するためにポジ型フォトレジスト・パターンを形成する場合を例にして、本露光方法の実施を説明する。 [0015] Using the example above exposure apparatus 10 of the exposure method, as an example case of forming a positive photoresist pattern to form a gate electrode pattern of the MOS transistor, the embodiment of the present exposure method explain. 1)先ず、フォトレジスト膜を塗布した同じロットに属する複数枚のウエハから一枚のウエハを選定して試料ウエハとし、試料ウエハ上に所定の露光、及び現像条件でパターンを露光し、現像する。 1) First, a sample wafer is selected one wafer from plurality of wafers belonging to the same lot which a photoresist film is applied, a predetermined exposure on the sample wafer, and exposing the pattern in the developing conditions, developing . 2)次いで、図2及び図3に示すように、試料ウエハの一の直径方向及びその直径方向に直交する方向に沿ってほぼ等間隔に設定した複数の測定位置P1からP5及びP1´からP5´でパターンの形成線幅を測定する。 2) Next, as shown in FIGS. 2 and 3, a plurality of measurement positions P1 set at substantially equal intervals along a direction perpendicular to the one radial direction and the diameter direction of the sample wafer P5 and from P1' P5 'measuring the formation line width of the pattern in.

【0016】3)ウエハ面内での設定線幅と形成線幅との差、即ち線幅偏差がウエハ中心からの距離に対して正規分布曲線に従って分布するという関係に従って、線幅測定値に基づき試料ウエハの任意に選定した位置、例えば星印位置での予測線幅偏差を算出し、設定線幅と予測線幅偏差から予測線幅を求める。 [0016] 3) the difference between the set line width and form line width at the wafer plane, i.e. according to the relationship linewidth deviations are distributed according to a normal distribution curve with respect to the distance from the wafer center based on the line width measured values optionally the selected position of the sample wafer, for example, to calculate the expected line width deviation at asterisk positions, obtaining the expected line width setting line widths from expected line width deviation. 4)次いで、図4に示すような線幅と露光量と相関関係に従って、予測線幅に基づき、選定位置で設定線幅を得るような、選定位置での所要露光量、例えば所要露光時間を前述のように算出する。 4) Then, according to the correlation between the exposure of the line width as shown in FIG. 4, on the basis of the expected line width, so as to obtain a setting line width selection position, the required exposure at selected positions, for example, the required exposure time calculated as described above. 続いて、例えば、図5に示すように、各選定位置に対して所要露光時間をそれぞれ算出する。 Then, for example, as shown in FIG. 5, respectively calculates the required exposure time for each selected position. 本実施例の場合、ウエハの中心部は、ポジ型フォトレジスト膜が周辺に比べて比較的薄くしかも均一に形成されるので、例えば線幅長0.32μm の場合、 In this embodiment, the center portion of the wafer, since the positive photoresist film is relatively thin and uniform formation than in the periphery, for example in the case of the line width length 0.32 [mu] m,
最適露光時間は400msecとなる。 The optimal exposure time is 400msec. 一方、ウエハ周辺部では、フォトレジスト膜の膜厚が比較的厚くなるために、線幅を同じ0.32μm にするには、露光位置に応じて420msecから450msecの露光時間が必要となる。 On the other hand, in the wafer peripheral portion, because the thickness of the photoresist film is relatively thick, to the line width in the same 0.32μm, the exposure time of 450msec from 420msec is required in accordance with the exposure position. 図5中、20はパターニングを施すウエハ、22はウエハ20上の各チップを意味する。 In Figure 5, 20 is a wafer subjected to patterning, 22 refers to each chip on the wafer 20. 尚、図5中、各選定位置に示した数値は、露光時間であって、単位のmsec In FIG. 5, numerical values ​​shown in the selected position is an exposure time, the unit msec
を省略している。 It is omitted. 5)続いて、試料ウエハ以外のウエハ上であって、試料ウエハ選定位置と同じ位置に算出した所要露光量でパターンを露光する。 5) Then, even on the wafer other than the sample wafer, exposing a pattern at a desired exposure amount calculated in the same position as the sample wafer selected position.

【0017】尚、上述の実施例では、測定位置P1からP5を等間隔に設定しているが、必ずしも等間隔に設定する必要はない。 [0017] In the embodiment described above, are set from the measured position P1 to P5 equally spaced, you need not necessarily be set at equal intervals. 例えば、P1とP5をウエハ周辺部に設け、P1とP5の間の任意の位置にP3を設け、P2 For example, it provided the P1 and P5 to the wafer periphery, the P3 provided at any position between P1 and P5, P2
をP1とP3との間の任意の位置に、またP4をP3とP5の間の任意の位置に設けても良い。 To any position between P1 and P3, also may be provided at any position between the P4 P3 and P5. また、フォトレジスト膜の膜厚分布は、ウエハ上に形成したデバイスチップの表面パターンにも多少依存するが、寧ろ、フォトレジスト液を塗布するスピンコータの型式及び回転数に依存していることが多い。 Further, the film thickness distribution of the photoresist film is somewhat dependent on the surface pattern of the device chip formed on a wafer, but rather, it is often dependent on the type and number of revolutions of the spin coater for applying a photoresist liquid . 従って、工程で使用するスピンコータを設定回転数で運転して、試料ウエハ上にフォトレジスト液を塗布し、図6に示す下のグラフのように、予め、線幅分布についてデータを取っておく。 Therefore, driving a spin coater to be used in the step in setting rotational speed, by applying a photoresist solution on the sample wafer, as the lower graph of FIG. 6, in advance, set aside data for line width distribution. そうすれば、試料ウエハと同じウエハに対しては、実工程でP1、P2、P3のいずれか一つの測定位置で線幅を測定し、下のグラフと同じ波形で測定値を通るグラフを図6に示す上のグラフのように描くことにより、全てのウエハ領域の線幅分布を推定することができる。 That way, for the same wafer as the sample wafer, P1, P2, the line width in any one measurement position of P3 measured in real process, FIG graphs through the measured values ​​in the same waveform as the graph below by drawing as the upper graph shown in 6, it is possible to estimate the line width distribution of all the wafer area.

【0018】 [0018]

【発明の効果】本発明の構成によれば、線幅偏差がウエハ中心からの距離に対して正規分布曲線に従って分布するという経験則に従って、露光、現像した試料ウエハの線幅測定値に基づき、試料ウエハの任意に選定した位置での予測線幅を算出し、線幅と露光量と相関関係に従って、予測線幅に基づき、選定位置で設定線幅を得るような、選定位置での所要露光量を算出し、その露光量でウエハの選定位置にパターンを露光する。 According to the configuration of the present invention, in accordance with rule of thumb that the line width deviation is distributed according to a normal distribution curve with respect to the distance from the wafer center, the exposure on the basis of the line width measurements of the developed sample wafers, calculates the expected line width at arbitrarily were selected position of the sample wafer in accordance with the correlation between the line width exposure, based on the expected line width, so as to obtain a setting line width selection position, the required exposure at selected positions calculating the amount of exposing a pattern in the selection position of the wafer in the exposure amount. 本発明を適用することにより、ウエハ面内で均一な線幅のパターンをウエハ上に形成することができるので、高速で動作する高密度の半導体装置を高い製品歩留りで製造することができる。 By applying the present invention, since the pattern with a uniform line width within the wafer plane can be formed on the wafer, it is possible to produce a high density semiconductor device which operates at high speed with high product yield.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明に係る露光装置の実施例の構成を示すブロック図である。 1 is a block diagram showing a configuration of an embodiment of an exposure apparatus according to the present invention.

【図2】オリエンテーション・フラットに平行な方向の直径に沿った測定位置での線幅測定値を示すグラフである。 2 is a graph showing the line width measured values ​​at the measurement positions along the parallel direction of the diameter of the orientation flat.

【図3】オリエンテーション・フラットに直交する方向の直径に沿った測定位置での線幅測定値を示すグラフである。 3 is a graph showing the line width measured values ​​at the measurement positions along the direction of the diameter perpendicular to the orientation flat.

【図4】露光時間と線幅との関係を示すグラフである。 4 is a graph showing the relationship between the exposure time and the line width.

【図5】ウエハ上の各チップの露光時間の分布を示す図である。 5 is a diagram showing the distribution of the exposure time of each chip on the wafer.

【図6】線幅分布を示すグラフである。 6 is a graph showing a line width distribution.

【符号の説明】 DESCRIPTION OF SYMBOLS

10……本発明に係る露光装置の実施例、12……ステッパ、14……第1算出手段、16……第2算出手段、 Example of an exposure apparatus according to 10 ...... present invention, 12 ...... stepper, 14 ...... first calculating means, 16 ...... second calculating means,
18……ウエハ、20……パターニングするチップ、2 18 ...... wafer, 20 ...... patterned to chip, 2
2……チップ。 2 ...... chip.

Claims (4)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 ウエハ上のフォトレジスト膜にパターンを露光する露光装置において、 ウエハ面内での設定線幅と形成線幅との差、即ち線幅偏差がウエハ中心からの距離に対して正規分布曲線に従って分布するという関係と、及び、所定の露光、及び現像条件で露光し、現像した試料ウエハの一の直径方向及びその直径方向に直交する方向に沿って設定した複数の測定位置で測定したパターンの線幅測定値とに基づき、試料ウエハの任意に選定した位置での予測線幅を算出する第1の算出手段と、 第1の算出手段で算出した予測線幅に基づいて線幅と露光量との相関関係に従って、選定位置で設定線幅を得るような、選定位置での所要露光量を算出する第2の算出手段とを備えていることを特徴とする露光装置。 1. A exposure apparatus for exposing a pattern on the photoresist film on the wafer, the difference between the set line width and form line width at the wafer plane, i.e. with respect to the distance of the line width deviation from the wafer central normal a relationship that distributed according to the distribution curve, and a predetermined exposure, and exposure with a developing condition, measured at a plurality of measurement positions set along the direction perpendicular to the one radial direction and the diameter direction of the developing sample wafer was based on the line width measured values ​​of the pattern, the first calculating means and the line width based on the predicted line width calculated by the first calculating means for calculating an expected line width at arbitrarily were selected position of the sample wafer and according to the correlation between the amount of exposure, so as to obtain a setting line width selection position, the exposure apparatus characterized by and a second calculating means for calculating a required amount of exposure selection position.
  2. 【請求項2】 露光装置が、縮小投影露光装置の場合には、所要露光量が露光時間で規定され、直接描画法による電子ビーム露光装置の場合には、所要露光量が露光時間及び/又は露光エネルギーで規定されることを特徴とする請求項1に記載の露光装置。 Wherein the exposure apparatus, in the case of reduction projection exposure apparatus, a required amount of exposure is defined by the exposure time, directly in the case of the drawing method of the electron beam exposure apparatus, a required amount of exposure exposure time and / or an apparatus according to claim 1, characterized in that defined by the exposure energy.
  3. 【請求項3】 ウエハ上のフォトレジスト膜にパターンを露光する露光方法において、 フォトレジスト膜を塗布した同じロットに属する複数枚のウエハから一枚のウエハを選定して試料ウエハとし、 3. A exposure method for exposing a pattern on the photoresist film on the wafer, and a sample wafer is selected one wafer from plurality of wafers belonging to the same lot which a photoresist film is applied,
    試料ウエハ上のフォトレジスト膜に所定の露光条件でパターンを露光し、現像する工程と、 試料ウエハの一の直径方向及びその直径方向に直交する方向に沿って設定した複数の測定位置でパターンの形成線幅を測定する工程と、 ウエハ面内での設定線幅と形成線幅との差、即ち線幅偏差がウエハ中心からの距離に対して正規分布曲線に従って分布するという関係に従って、線幅測定値に基づき、 Exposing a pattern in a predetermined exposure conditions in the photoresist film on the sample wafer, a step of developing, the pattern at a plurality of measurement positions set along one diametrical direction and the direction perpendicular to the diameter direction of the sample wafer measuring a formation line width, according to the relationship that the difference between the set line width and form line width at the wafer plane, i.e. the line width deviation is distributed according to a normal distribution curve with respect to the distance from the wafer center, the line width based on the measured values,
    試料ウエハの任意に選定した位置での予測線幅を算出する工程と、 次いで、線幅と露光量と相関関係に従って予測線幅に基づき、選定位置で設定線幅を得るような、選定位置での所要露光量を算出する工程と、 試料ウエハ以外のウエハのフォトレジスト膜上であって、試料ウエハ選定位置と同じ位置に算出した所要露光量でパターンを露光する工程とを備えていることを特徴とする露光方法。 Calculating a prediction line width at any to the selected position of the sample wafer, then, based on the expected line width in accordance with the correlation between the line width exposure, so as to obtain a setting line width selection position, at selected positions calculating a required amount of exposure, that even on the photoresist film of the wafer other than the sample wafer, and a step of exposing a pattern at a desired exposure amount calculated in the same position as the sample wafer selected position exposure method according to claim.
  4. 【請求項4】 ウエハが、ゲート層として成膜されたポリシリコン層上にフォトレジスト膜を成膜したものであって、フォトリソグラフィによりパターニングしてMO 4. A wafer, be one obtained by forming a photoresist film on the deposited polysilicon layer as a gate layer is patterned by photolithography MO
    Sトランジスタのゲートを形成する際に適用することを特徴とする請求項3に記載の露光方法。 The exposure method according to claim 3, characterized in that applied in forming the gate of the S transistor.
JP8283678A 1996-10-25 1996-10-25 Exposure device and exposure method Pending JPH10135099A (en)

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