JP3984841B2

JP3984841B2 - Distortion measuring apparatus, distortion suppressing apparatus, exposure apparatus, and device manufacturing method

Info

Publication number: JP3984841B2
Application number: JP2002062303A
Authority: JP
Inventors: 裕史磯部; 博仁伊藤; 浩太郎堆
Original assignee: Canon Inc
Current assignee: Canon Inc
Priority date: 2002-03-07
Filing date: 2002-03-07
Publication date: 2007-10-03
Anticipated expiration: 2022-03-07
Also published as: JP2003262501A

Description

【０００１】
【発明の属する技術分野】
本発明は歪み計測装置、歪み抑制装置、及び露光装置、並びにデバイス製造方法に関する。
【０００２】
【従来の技術】
近年、微細加工技術によって、物体、例えば、プロセスに用いられる試料等を高精度で移動させる技術が求められている。例えば、半導体製造プロセスで用いられる露光装置においては、露光線幅の微細化に伴い、露光装置のウエハステージに求められる位置制御精度は数ｎｍのオーダーに達している。また、生産性の向上の観点から、ステージの移動加速度および移動速度は年々増大の傾向にある。
【０００３】
このような高速・高精度の位置制御を実現するためには、ウエハステージ位置制御系のサーボ帯域が高いことが必要である。高いサーボ帯域は目標値への応答性が高く、外乱などの影響にも頑健なシステムを実現する。従って、可能な限り高いサーボ帯域を実現する、ウエハステージ、本体構造体等の設計が行われている。
【０００４】
図９は、従来の露光装置のウエハステージの構成を示す概略図である。なお、以下では基準座標系に対する並進３軸（Ｘ,Ｙ,Ｚ）と並進３軸の各軸周りの回転３軸（θｘ、θｙ、θｚ）を合わせて６自由度位置と呼ぶことにする。この例を用いて、従来の位置制御系の構成とその動作を説明する。
【０００５】
定盤４１は床Ｆからダンパを介して支持されている。Ｙステージ４３は、定盤４１に固定された固定ガイド４２に沿ってＹ方向に推力を発生するＹリニアモータ４６により、定盤４１の基準面上をＹ方向に移動可能である。定盤４１および固定ガイド４２とＹステージ４３との間は静圧軸受であるエアパッド４４ａ、４４ｂを介してエアで結合されており非接触である。Ｙステージ４３はＸ方向のガイドを備えており、Ｙステージに搭載されたＸステージ４５をＸ方向に案内する。また、Ｙステージ４３にはＸ方向に力を発生するＸリニアモータ固定子が設けられ、Ｘステージに設けられたＸリニアモータ可動子と共に、Ｘステージ４５をＸ方向に駆動させる。定盤４１及びＸガイドとＸステージ４５との間は静圧軸受であるエアパッド４４ｃを介してエアで結合されており、非接触である。
【０００６】
Ｘステージ４５にはチルトステージ４８が搭載されている。チルトステージ４８は不図示のリニアモータによる推力でＺ方向の移動と３軸（θｘ、θｙ、θｚ）方向の回転とを行う。チルトステージ４８上にウエハチャックを備えたステージ基板５１が搭載され、被露光体であるウエハ５３を保持する。また、ステージ基板５１上にはＸ方向およびＹ方向の位置計測に用いる計測ミラー４９ａ、ｂが設けられる。
【０００７】
露光装置のステージ装置は、定盤４１の基準面に対して面内方向（Ｘ、Ｙ、θｚ）および垂直（チルト）方向（Ｚ、θｘ、θｙ）の６自由度の位置決めを行い、１チップ分の露光を行う。面内方向（Ｘ、Ｙ、θｚ）の位置の計測は不図示のレンズ鏡筒と一体であるレーザ干渉計５０を用いて測定され、垂直（チルト）方向（Ｚ、θｘ、θｙ）の計測はレンズ鏡筒と一体のアライメント計測系（不図示）によりＺ方向の位置と回転成分の角度が計測される。
【０００８】
図９ではレンズ鏡筒と定盤４１は一体であると仮定して、レーザ干渉計５０は定盤４１に取り付けられている。また、Ｚ方向の位置計測は図示を省略しているが、ステージ基板もしくはウエハ上の３点をレンズ鏡筒から計測することにより垂直（チルト）方向（Ｚ、θｘ、θｙ）の計測が可能である。
【０００９】
ステージ４３、４５、チルトステージ４８のこれら６自由度位置方向への位置決めは、各ＸＹＺ軸にサーボ系を構成することにより行われる。すなわち、レーザ干渉計５０により計測された位置情報をもとに補償器（不図示）がＸステージ４５をＸ方向に駆動する。ＸリニアモータとＹステージ４３をＹ方向に駆動するＹリニアモータ４６への駆動指令値を演算し、Ｘ、Ｙリニアモータが該駆動指令値に基づいて各々Ｘステージ４５、Ｙステージ４３を駆動する。また、補償器はＺ方向の位置と回転方向（θｘ、θｙ）の角度と前記のθｚ方向の計測値に応じて、チルトステージ４８への駆動指令値を演算し、リニアモータによりチルトステージ４８が駆動される。
【００１０】
このように構成された従来の位置制御系によれば、ウエハステージは与えられた目標位置に高速・高精度に移動させることができる。しかしながら、上記のように構成されたウエハステージをさらに高速に動かそうとすると、ウエハステージが持つ弾性特性に起因する弾性振動が発生し、位置決め精度や速度が低下することがある。このような課題を解決するために、ウエハステージの弾性振動の腹となるところに歪み計測装置（例えば圧電素子センサ）を取り付け、ウエハステージの弾性振動による歪みを計測し、逆に、またウエハステージの弾性振動の腹となるところに取り付けた圧電素子に通電して力（歪）を発生させ、歪み抑制装置（例えばアクチュエータ）として弾性振動を抑制する技術が知られている。
【００１１】
【発明が解決しようとする課題】
しかしながら、圧電素子センサは、ウエハステージ面に接着などの手段で直接貼り付けられるため、ウエハステージ面の弾性振動の方向を正確に計測できないという問題がある。この点について図７を用いて説明する。図７はウエハステージのステージ面に圧電素子センサを直接接着した状態を示す図である。ウエハステージが弾性振動してステージ面上に歪みが生じると、圧電素子は下記式（１）に示すように、図中のＸ方向、Ｙ方向の歪み量εｘ、εｙの和に比例した電圧Ｖ０を出力する。このように圧電素子センサを直接ウエハステージ面に接着すると、圧電素子は２方向（Ｘ方向とＹ方向）の歪み成分の和は計測できるが、各々の方向の歪み成分を正確に計測できないのである。
【００１２】
【数１】

また、上記圧電素子センサと同様にアクチュエータとして用いる場合も、圧電素子をウエハステージ面に直接貼り付けているので、ウエハステージ面の弾性振動を正確に抑制することは難しい。このことも図７を用いて説明する。ウエハステージが図中のＸ方向に弾性振動を生じているとする。この弾性振動を抑制するために圧電素子に電圧Ｖｉを印加させたとすると、下記式（２）、式（３）のように、Ｘ方向とＹ方向に同時に歪みによる力が発生する。つまり、圧電素子はＸ方向のみの弾性振動を抑制したい場合でも不要なＹ方向の力（歪）も発生してしまう。このために、圧電素子をアクチュエータとして用いてもウエハステージの弾性振動を高精度に低減できないのである。
【００１３】
【数２】

本発明は、上記の問題点に鑑みてなされたものであり、例えば、物体に発生する歪みを正確に計測する歪み計測装置、並びにその物体の歪みを大幅に低減する歪み抑制装置、露光装置、デバイス製造方法の提供を目的とする。
【００１４】
【課題を解決するための手段】
本発明の第１の側面は、物体の歪みを計測する歪み計測装置に係り、前記物体に生じる歪みを検出する歪み検出素子と、前記物体に固定されると共に、前記歪み検出素子が固着されて前記物体の歪みを前記歪み検出素子に伝達する伝達部材とを備え、前記伝達部材は、前記物体の所定方向に平行な直線上の離間する複数点で前記物体に固定されていることを特徴とする。
【００１５】
本発明の第２の側面は、物体の歪みを計測する歪み計測装置に係り、前記物体に生じる歪みを検出する歪み検出素子と、前記物体に固定されると共に、前記歪み検出素子が固着されて前記物体の歪みを前記歪み検出素子に伝達する伝達部材とを備え、前記伝達部材は、前記物体の所定方向に平行な複数のスリットを有することを特徴とする。
【００１６】
本発明の第３の側面は、物体の歪みを計測する歪み計測装置に係り、物体に生じる歪みを検出する複数の歪み検出素子と、前記物体に固定されると共に、前記歪み検出素子が固着されて前記物体の歪みを前記歪み検出素子に伝達する伝達部材とを備え、前記複数の歪み検出素子は、前記物体の所定方向に平行な直線を挟んで離間して前記伝達部材に配置され、前記伝達部材は、前記直線上の複数点で前記物体に固定されていることを特徴とする。
【００１７】
本発明の第４の側面は、物体の歪みを計測する歪み計測装置に係り、物体に生じる歪みを検出する複数の歪み検出素子と、前記物体に固定されると共に、前記歪み検出素子が固着されて前記物体の歪みを前記歪み検出素子に伝達する伝達部材とを備え、前記複数の歪み検出素子は、前記物体の所定方向に平行な複数の直線の各直線上に離間して前記伝達部材に配置され、前記伝達部材は前記直線上の複数点で前記物体に固定されていることを特徴とする。
【００１８】
本発明の好適な実施の形態によれば、前記伝達部材は、前記伝達部材に形成された台座を介して前記物体に固定されている。
【００１９】
本発明の好適な実施の形態によれば、前記歪み検出素子は、圧電素子である。
【００２０】
本発明の第５の側面は、露光装置に係り、前記物体は、半導体製造工程において基板又は原版を移動させる移動ステージであることを特徴とし、上記の歪み計測装置を備えている。
【００２１】
本発明の第６の側面は、物体に発生する歪みを抑制する歪み抑制装置に係り、前記物体に対して歪みによる力を発生する歪み発生素子と、前記物体に固定されると共に、前記歪み発生素子が固着されて前記歪み発生素子の歪みによる力を前記物体に伝達する伝達部材とを備え、前記伝達部材は、前記物体の所定方向に平行な直線上の離間する複数点で前記物体に固定されていることを特徴とする。
【００２２】
本発明の第７の側面は、物体に発生する歪みを抑制する歪み抑制装置に係り、前記物体に対して歪みによる力を発生する歪み発生素子と、前記物体に固定されると共に、前記歪み発生素子が固着されて前記歪み発生素子の歪みによる力を前記物体に伝達する伝達部材とを備え、前記伝達部材は、前記物体の所定方向に平行な複数のスリットを有することを特徴とする。
【００２３】
本発明の第８の側面は、物体に発生する歪みを抑制する歪み抑制装置に係り、前記物体に対して歪みによる力を発生する複数の歪み発生素子と、前記物体に固定されると共に、前記歪み発生素子が固着されて前記歪み発生素子の歪みによる力を前記物体に伝達する伝達部材とを備え、前記複数の歪み抑制素子は、前記物体の所定方向に平行な直線を挟んで離間して前記伝達部材に配置され、前記伝達部材は、前記直線上の複数点で前記物体に固定されていることを特徴とする歪み抑制装置。
【００２４】
本発明の第９の側面は、物体に発生する歪みを抑制する歪み抑制装置に係り、前記物体に対して歪みによる力を発生する複数の歪み発生素子と、前記物体に固定されると共に、前記歪み発生素子が固着されて前記歪み発生素子の歪みによる力を前記物体に伝達する伝達部材とを備え、前記歪み抑制素子は、前記物体の所定方向に平行な複数の直線の各直線上に離間して前記伝達部材に配置され、前記伝達部材は、前記直線上の複数点で前記物体に固定されていることを特徴とする。
【００２５】
本発明の好適な実施の形態によれば、前記伝達部材は、前記伝達部材に形成された台座を介して前記物体に固定されている。
【００２６】
本発明の好適な実施の形態によれば、前記歪み抑制素子は、圧電素子である。
【００２７】
本発明の第１０の側面は、露光装置に係り、前記物体は、半導体製造工程において基板又は原版を移動させる移動ステージであることを特徴とし、上記の歪み抑制装置を備えている。
【００２８】
本発明の第１０の側面は、基板に感光材を塗布する塗布工程と、前記塗布工程で前記感光材が塗布された前記基板に上記の露光装置を利用してパターンを転写する露光工程と、前記露光工程で前記パターンが転写された前記基板の前記感光材を現像する現像工程と、を有することを特徴とする。
【００３４】
【発明の実施の形態】
以下、添付図面を参照しながら本発明の好適な実施の形態について説明する。
【００３５】
本発明は以下の実施形態に限られず、例えば、移動ステージは弾性特性を有する構造物の弾性歪み計測及び弾性歪み抑制に有効である。また、例えば、半導体露光装置に用いられるウエハステージの構造物の弾性歪み計測及び弾性歪み抑制にも有効である。
【００３６】
（第１実施形態）
図１は、本発明の好適な実施の形態に係る歪み計測装置及び／又は歪み抑制装置の概観を示す斜視図である。所定の方向をＸ方向として、圧電素子１の短手方向の略中心を通る長手方向に沿う直線３ａ上に拘束点２、３がある。計測したい歪みの方向もしくは発生させたい力の方向は、例えばＸ方向であるとする。この場合、圧電素子１を接着した伝達部材４は、拘束点２及び拘束点３のみで物体面５に固定されている。
【００３７】
圧電素子１を歪み計測装置として使用する場合、物体面５が弾性振動による歪みを生じたとき、弾性歪みのＹ方向成分は伝達部材４には伝わらず、Ｘ方向の歪みのみが伝達部材４に伝わり、圧電素子１によってＸ方向の歪みが計測される。さらに、圧電素子１を移動ステージ面５の弾性歪みを抑制制御する歪み抑制装置として使用する場合、圧電素子１に電圧を印加した際、伝達部材４にはＸ、Ｙ両方向の力が伝わるが、物体面５にはＸ方向のみの力が伝わる。図８は、図１に示す歪み抑制装置及び／又は計測装置を移動ステージに適用した一例を示す図である。図１及び図８において、圧電素子１は、歪み計測装置８０１、歪み抑制装置８０２として伝達部材４を介して移動ステージ面８００に取り付けられている。歪み計測装置８０１によって計測された歪み量に従って、移動ステージ面８００の弾性振動を抑制するように歪み抑制装置８０２に電圧が印加される。このようにして移動ステージ面８００の弾性振動が低減されるため、移動ステージ装置８０３を高速且つ高精度に位置決めすることができる。また、本発明に係る好適な実施の形態の歪み抑制装置及び／又は計測装置は、移動ステージのみに適用が限定されるものではない。例えば、図９に示す従来の半導体露光装置のウエハステージにも適用することができる。図９において、レーザ干渉計５０は、定盤４１に接続されている。よって定盤４１の弾性振動はレーザ干渉計５０に伝わり、定盤４１とレーザ干渉計５０との接続部が弾性歪みを生じるため、ウエハステージの位置計測が正確に行えない。この場合、定盤４１とレーザ干渉計５０との接続部に伝達部材４を介して圧電素子１を取り付けることによって、弾性振動による歪みを低減するといった適用も考えられる。
【００３８】
さらに、図１において、伝達部材４を物体面５に固定する拘束点は上記の２点に限るものではない。図１のＸ軸に平行な一直線を示す点線３ａ上であれば、無限に拘束点を設けても、歪み計測装置が計測する移動ステージの歪みと、歪み抑制装置が弾性振動を抑制すべく物体に与える力はＸ方向成分のみとなる。よって、伝達部材４は、所定の方向に対して任意の間隔に配置された１つまたは複数の拘束点を含みうる。これらの拘束点での拘束方法としては、例えば、拘束点に設けた穴にネジまたはピンで固定する方法がある。この固定方法の長所は取り外しが容易であるという点である。
【００３９】
（第２実施形態）
図２は、本発明の第２の好適な実施形態に係る歪み抑制装置及び／又は計測装置の概観を示す斜視図である。所定の方向をＸ方向として、伝達部材９の短手方向の略中心を通る長手方向に沿う直線３ａに平行な複数のスリットが形成されている。図２に示すように、不図示の圧電素子は、Ｘ方向に溝が形成され、Ｙ方向に配列された複数のスリットからなるスリット群６を有する伝達部材９上の一点鎖線部分８に接着される。この伝達部材９は、多数の拘束点７で物体（例えば移動ステージ）に固定される。この構成において、圧電素子を歪み計測装置として使用する場合、圧電素子はＸ方向の歪みは計測するが、Ｙ方向の歪みはＸ軸に平行に切られたスリット群６によって圧電素子には伝わらないために計測されない。圧電素子を歪み抑制装置として使用した場合も同様に、Ｘ方向のみの力を物体（例えば移動ステージ）に与える。伝達部材９の物体（例えば移動ステージ）への拘束点の数は、伝達部材９上のスリットが切られていない部分であれば何点でもよい。
【００４０】
（第３実施形態）
図３は、本発明の第３の好適な実施形態に係る歪み抑制装置及び／又は計測装置の概観を示す斜視図である。所定の方向をＸ方向として、伝達部材１０の短手方向の略中心を通る長手方向に沿う直線１４に重ならないように複数の歪み抑制装置及び／又は計測装置（例えば圧電素子）が離間して配置されている。図３に示したように、伝達部材１０は、複数の圧電素子１２が取り付けられている。点線１４上の拘束点１１で物体面、例えば、移動ステージ面１３を拘束すれば、前述の第１実施形態と同様に、これらの圧電素子１２はＸ方向のみの歪みを計測する歪み計測装置、またはＸ方向のみに力を発生する歪み抑制装置となる。この伝達部材１０の長所は、複数の圧電素子１２に分けることによって点線１４上にスペースを形成し、この開放されたスペースに伝達部材１０の拘束点１１を形成することにより、圧電素子１２を移動ステージ面１３へ容易に固定できることである。特に、伝達部材１０をネジで固定する場合には、第１実施形態では物体側からネジで固定するもしくは圧電素子１に穴をあけてネジで物体に固定するなどの方法で行われるが、伝達部材１０の場合は、移動ステージ面１３に対する固定部分が面上に開放されていることによって、伝達部材１０側から移動ステージ面１３にネジで固定できるようになり、取り付けが容易になる。
【００４１】
（第４実施形態）
図４、５は、本発明の第４の好適な実施形態に係る歪み抑制装置及び／又は計測装置の概観を示す斜視図である。伝達部材１８、２１と物体、例えば移動ステージ１９、２４とは、伝達部材１８、２１に形成された台座１８ａ、２１ａを介して当接している。図４、５はそれぞれ、図１、３に示した第１、第３実施形態の伝達部材４、１０を改良したものである。図１、３に示した伝達部材４、１０は、拘束点２、３、１１付近以外にも物体、例えば移動ステージと接している部分が多数ありうる。これによって摩擦接触する部分が存在し、圧電素子の発生力が移動ステージ面に伝達される際、非線形な特性が含まれる可能性がある。同様の問題は移動ステージの歪みを計測する場合にも発生する。このことは、弾性振動を抑制する制御系を組む際に制御性能が劣化するので好ましくない。一方、図４、５に示す伝達部材１８、２１は拘束点１６、１７、２２付近に台座１８ａ、２１ａがついているため、拘束点付近以外は移動ステージと接触しない。このことによって摩擦接触する部分が減少し、非線形な特性によって制御系の制御性能が劣化することが少なくなる。
【００４２】
（第５実施形態）
図６は、本発明の第５の好適な実施形態に係る歪み抑制装置及び／又は計測装置の概観を示す斜視図である。所定の方向をＸ方向として、伝達部材２６の短手方向の略中心を通る長手方向に沿う直線３０と交差するように複数の歪み検出素子が離間して配置されている。図６に示す伝達部材２６は、第３の実施形態で説明した図３の伝達部材１０と同様に、複数の圧電素子２７を用いて、物体、例えば移動ステージとの拘束点部分を開放したことによって、移動ステージへの取り付けを容易にするものである。この伝達部材２６が図３の伝達部材１０と違う点は、圧電素子２７を複数の拘束点２８の間に接着した点である。その結果、接着する圧電素子２７は発生したい力の向きと直行する方向（図６ではＹ方向）に長細い形状にすることができる。式（２）に示したように圧電素子のＸ方向の発生力はＹ軸方向の長さに比例する。よって、伝達部材２６のように圧電素子２７を接着するとＸ方向の発生力を大きくする効果が得られる。また、この伝達部材２６も第４の実施形態で述べた図４、５のように拘束点付近に台座を取り付ければ、非線形な特性を少なくすることができ、弾性歪みの制御性能が劣化することが少なくなる。
【００４３】
次に、本発明の歪み計測装置、歪み抑制装置を半導体デバイスの製造プロセスで用いられる露光装置に適用した場合の実施の形態について説明する。
【００４４】
図１０は、本発明の歪み計測装置、歪み抑制装置を半導体デバイスの製造プロセスに適用した場合に用いられる露光装置の概念図を示したものである。
【００４５】
本発明の好適な実施形態における露光装置１００は、照明光学系１０１、レティクル１０２、投影光学系１０３、基板１０４、移動ステージ１０５で構成される。照明光学系１０１は、例えば、エキシマレーザ、フッ素エキシマレーザなどを光源とした紫外光を露光光として用いることができる。照明光学系１０１からの光は、レティクル１０２に照射される。レティクル１０２を通った光は、投影光学系１０３を通して、基板１０４上に焦点を結び、基板１０４表面に塗布された感光材を露光する。基板１０４は、本発明の歪み計測装置、歪み抑制装置を適用した移動ステージ１０５を用いて所定の位置へ移動する。
【００４６】
図１１は、上記の露光装置を用いた半導体デバイスの全体的な製造プロセスのフローである。ステップ１（回路設計）では半導体デバイスの回路設計を行う。ステップ２（マスク作製）では設計した回路パターンに基づいてマスクを作製する。一方、ステップ３（ウエハ製造）ではシリコン等の材料を用いてウエハを製造する。ステップ４（ウエハプロセス）は前工程と呼ばれ、上記のマスクとウエハを用いて、リソグラフィ技術によってウエハ上に実際の回路を形成する。次のステップ５（組み立て）は後工程と呼ばれ、ステップ４によって作製されたウエハを用いて半導体チップ化する工程であり、アッセンブリ工程（ダイシング、ボンディング）、パッケージング工程（チップ封入）等の組み立て工程を含む。ステップ６（検査）ではステップ５で作製された半導体デバイスの動作確認テスト、耐久性テスト等の検査を行う。こうした工程を経て半導体デバイスが完成し、これを出荷（ステップ７）する。
【００４７】
図１２は、上記ウエハプロセスの詳細なフローを示す。ステップ１１（酸化）ではウエハの表面を酸化させる。ステップ１２（ＣＶＤ）ではウエハ表面に絶縁膜を成膜する。ステップ１３（電極形成）ではウエハ上に電極を蒸着によって形成する。ステップ１４（イオン打込み）ではウエハにイオンを打ち込む。ステップ１５（レジスト処理）ではウエハに感光剤を塗布する。ステップ１６（露光）では上記の露光装置を用いて、ウエハを移動するときに生じる移動ステージの歪みを正確に計測し、その物体の歪みを大幅に低減しながらウエハを精密に移動させ、回路パターンをウエハに転写する。ステップ１７（現像）では露光したウエハを現像する。ステップ１８（エッチング）では現像したレジスト像以外の部分を削り取る。ステップ１９（レジスト剥離）ではエッチングが済んで不要となったレジストを取り除く。これらのステップを繰り返し行うことによって、ウエハ上に多重に回路パターンを形成する。
【００４８】
【発明の効果】
本発明によれば、例えば、物体に発生する歪みを正確に計測する歪み計測装置、並びにその物体の歪みを大幅に低減する歪み抑制装置、露光装置、デバイス製造方法を提供することができる。
【図面の簡単な説明】
【図１】本発明の好適な実施の形態に係る歪み計測装置及び／又は歪み抑制装置の概観を示す斜視図である。
【図２】本発明の第２の好適な実施形態に係る歪み抑制装置及び／又は計測装置の概観を示す斜視図である。
【図３】本発明の第３の好適な実施形態に係る歪み抑制装置及び／又は計測装置の概観を示す斜視図である。
【図４】本発明の第４の好適な実施形態に係る歪み抑制装置及び／又は計測装置の概観を示す斜視図である。
【図５】本発明の第４の好適な実施形態に係る歪み抑制装置及び／又は計測装置の概観を示す斜視図である。
【図６】本発明の第５の好適な実施形態に係る歪み抑制装置及び／又は計測装置の概観を示す斜視図である。
【図７】ウエハステージのステージ面に圧電素子センサを直接接着した状態を示す図である。
【図８】図１に示す歪み抑制装置及び／又は計測装置を移動ステージに適用した一例を示す図である。
【図９】従来の半導体露光装置のウエハステージの構成を示す概略図である。
【図１０】本発明の歪み計測装置、歪み抑制装置を半導体デバイスの製造プロセスに適用した場合に用いられる露光装置の概念図である。
【図１１】半導体デバイスの全体的な製造プロセスのフローを示す図である。
【図１２】ウエハプロセスの詳細なフローを示す図である。
【符号の説明】
１圧電素子、２、３伝達部材拘束点、３ａ伝達部材中心軸線、４６伝達部材、５物体面、６スリット群、７拘束点、８圧電素子取り付け位置、９伝達部材、１０伝達部材、１１拘束点、１２圧電素子、１３移動ステージ面、１４伝達部材中心軸線、１５圧電素子、１６、１７伝達部材拘束点、１８伝達部材、１９移動ステージ面、２０伝達部材中心軸線、２１伝達部材、２２伝達部材拘束点、２３圧電素子、２４移動ステージ面、２５伝達部材中心軸線、２６伝達部材、２７圧電素子、２８伝達部材拘束点、４１定盤、４２Ｙ方向ガイド、４３Ｙステージ、４４エアパッド、４５Ｘステージ、４６リニアモータ、４８チルトステージ、４９ミラー、５０レーザ干渉計、５１ステージ基板、５３ウエハ、８００移動ステージ面、８０１歪み抑制装置、８０２歪み計測装置、８０３移動ステージ装置[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a distortion measuring apparatus, a distortion suppressing apparatus, an exposure apparatus, and a device manufacturing method.
[0002]
[Prior art]
In recent years, there has been a demand for a technique for moving an object, for example, a sample used in a process, with high accuracy by a fine processing technique. For example, in an exposure apparatus used in a semiconductor manufacturing process, the position control accuracy required for the wafer stage of the exposure apparatus has reached the order of several nm as the exposure line width is reduced. Further, from the viewpoint of improving productivity, the moving acceleration and moving speed of the stage tend to increase year by year.
[0003]
In order to realize such high-speed and high-accuracy position control, it is necessary that the wafer stage position control system has a high servo band. A high servo band realizes a system that has high responsiveness to the target value and is robust against the influence of disturbances. Therefore, a wafer stage, a main body structure and the like are designed to realize a servo band as high as possible.
[0004]
FIG. 9 is a schematic diagram showing the configuration of a wafer stage of a conventional exposure apparatus. In the following description, the three translational axes (X, Y, Z) with respect to the reference coordinate system and the three rotation axes (θx, θy, θz) around the three translational axes are collectively referred to as a six-degree-of-freedom position. The configuration and operation of a conventional position control system will be described using this example.
[0005]
The surface plate 41 is supported from the floor F via a damper. The Y stage 43 is movable in the Y direction on the reference surface of the surface plate 41 by a Y linear motor 46 that generates thrust in the Y direction along a fixed guide 42 fixed to the surface plate 41. The surface plate 41 and the fixed guide 42 and the Y stage 43 are coupled by air via

air pads

44a and 44b, which are hydrostatic bearings, and are not in contact with each other. The Y stage 43 includes a guide in the X direction, and guides the X stage 45 mounted on the Y stage in the X direction. The Y stage 43 is provided with an X linear motor stator that generates a force in the X direction, and drives the X stage 45 in the X direction together with the X linear motor movable element provided on the X stage. The surface plate 41 and the X guide and the X stage 45 are coupled by air via an air pad 44c, which is a static pressure bearing, and are not in contact with each other.
[0006]
A tilt stage 48 is mounted on the X stage 45. The tilt stage 48 moves in the Z direction and rotates in three axes (θx, θy, θz) by a thrust force from a linear motor (not shown). A stage substrate 51 having a wafer chuck is mounted on the tilt stage 48 and holds a wafer 53 as an object to be exposed. On the stage substrate 51,

measurement mirrors

49a and 49b used for position measurement in the X direction and the Y direction are provided.
[0007]
The stage device of the exposure apparatus performs positioning with six degrees of freedom in the in-plane direction (X, Y, θz) and the vertical (tilt) direction (Z, θx, θy) with respect to the reference surface of the surface plate 41. Minutes of exposure. The position in the in-plane direction (X, Y, θz) is measured using a laser interferometer 50 that is integral with a lens barrel (not shown), and the measurement in the vertical (tilt) direction (Z, θx, θy) is performed. The position in the Z direction and the angle of the rotation component are measured by an alignment measurement system (not shown) integrated with the lens barrel.
[0008]
In FIG. 9, it is assumed that the lens barrel and the surface plate 41 are integrated, and the laser interferometer 50 is attached to the surface plate 41. Although the Z-direction position measurement is not shown, measurement in the vertical (tilt) direction (Z, θx, θy) is possible by measuring three points on the stage substrate or wafer from the lens barrel. is there.
[0009]
The positioning of the stages 43 and 45 and the tilt stage 48 in the direction of these six degrees of freedom is performed by configuring a servo system on each XYZ axis. That is, a compensator (not shown) drives the X stage 45 in the X direction based on the position information measured by the laser interferometer 50. A drive command value to the Y linear motor 46 that drives the X linear motor and the Y stage 43 in the Y direction is calculated, and the X and Y linear motors drive the X stage 45 and the Y stage 43, respectively, based on the drive command value. . The compensator calculates a drive command value for the tilt stage 48 according to the position in the Z direction, the angle in the rotation direction (θx, θy), and the measured value in the θz direction. Driven.
[0010]
According to the conventional position control system configured as described above, the wafer stage can be moved to a given target position at high speed and with high accuracy. However, if an attempt is made to move the wafer stage configured as described above at a higher speed, elastic vibration due to the elastic characteristics of the wafer stage may occur, and positioning accuracy and speed may decrease. In order to solve such a problem, a strain measuring device (for example, a piezoelectric element sensor) is attached to the place where the anti-vibration of the wafer stage is caused, and the distortion due to the elastic vibration of the wafer stage is measured. 2. Description of the Related Art A technique for suppressing elastic vibration is known as a distortion suppression device (for example, an actuator) that generates a force (strain) by energizing a piezoelectric element that is attached to an antinode of elastic vibration.
[0011]
[Problems to be solved by the invention]
However, since the piezoelectric element sensor is directly attached to the wafer stage surface by means such as adhesion, there is a problem that the direction of elastic vibration of the wafer stage surface cannot be measured accurately. This point will be described with reference to FIG. FIG. 7 is a view showing a state where the piezoelectric element sensor is directly bonded to the stage surface of the wafer stage. When the wafer stage is elastically vibrated and strain is generated on the stage surface, the piezoelectric element has a voltage V0 proportional to the sum of strain amounts εx and εy in the X and Y directions in the figure, as shown in the following formula (1). Is output. When the piezoelectric element sensor is directly bonded to the wafer stage surface in this way, the piezoelectric element can measure the sum of the distortion components in two directions (X direction and Y direction), but cannot accurately measure the distortion components in each direction. .
[0012]
[Expression 1]

In addition, when used as an actuator in the same manner as the piezoelectric element sensor, it is difficult to accurately suppress elastic vibration of the wafer stage surface because the piezoelectric element is directly attached to the wafer stage surface. This will also be described with reference to FIG. It is assumed that the wafer stage generates elastic vibration in the X direction in the figure. If the voltage Vi is applied to the piezoelectric element in order to suppress this elastic vibration, a force due to strain is generated simultaneously in the X direction and the Y direction as in the following formulas (2) and (3). That is, the piezoelectric element generates unnecessary force (strain) in the Y direction even when it is desired to suppress elastic vibration only in the X direction. For this reason, even if a piezoelectric element is used as an actuator, the elastic vibration of the wafer stage cannot be reduced with high accuracy.
[0013]
[Expression 2]

The present invention has been made in view of the above-described problems. For example, a distortion measuring apparatus that accurately measures distortion generated in an object, a distortion suppression apparatus that significantly reduces distortion of the object, an exposure apparatus, and the like. An object is to provide a device manufacturing method.
[0014]
[Means for Solving the Problems]
A first aspect of the present invention relates to a strain measurement apparatus that measures strain of an object, and includes a strain detection element that detects strain generated in the object, and is fixed to the object, and the strain detection element is fixed. A transmission member that transmits strain of the object to the strain detection element, and the transmission member is fixed to the object at a plurality of points spaced apart on a straight line parallel to a predetermined direction of the object. To do.
[0015]
A second aspect of the present invention relates to a strain measuring apparatus that measures strain of an object, and includes a strain detection element that detects strain generated in the object, and is fixed to the object and the strain detection element is fixed. A transmission member configured to transmit strain of the object to the strain detection element, and the transmission member includes a plurality of slits parallel to a predetermined direction of the object.
[0016]
According to a third aspect of the present invention, there is provided a strain measuring apparatus for measuring a strain of an object, and a plurality of strain detecting elements for detecting a strain generated in the object, and being fixed to the object and the strain detecting element being fixed. A transmission member that transmits strain of the object to the strain detection element, and the plurality of strain detection elements are arranged on the transmission member with a straight line parallel to a predetermined direction of the object being spaced apart, The transmission member is fixed to the object at a plurality of points on the straight line.
[0017]
According to a fourth aspect of the present invention, there is provided a strain measuring apparatus for measuring a strain of an object. The strain measuring element detects a strain generated in the object, and is fixed to the object, and the strain detecting element is fixed. A transmission member configured to transmit strain of the object to the strain detection element, and the plurality of strain detection elements are spaced apart from each other of a plurality of straight lines parallel to a predetermined direction of the object to the transmission member. It is arranged, and the transmission member is fixed to the object at a plurality of points on the straight line .
[0018]
According to a preferred embodiment of the present invention, the transmission member is fixed to the object via a pedestal formed on the transmission member.
[0019]
According to a preferred embodiment of the present invention, the strain detection element is a piezoelectric element .
[0020]
According to a fifth aspect of the present invention, there is provided an exposure apparatus, wherein the object is a moving stage for moving a substrate or an original plate in a semiconductor manufacturing process, and includes the distortion measuring apparatus described above .
[0021]
A sixth aspect of the present invention relates to a strain suppression device that suppresses strain generated in an object. The strain generation element generates a force due to strain on the object; and the strain generation device is fixed to the object and generates the strain. And a transmission member that transmits the force generated by the distortion of the strain generating element to the object, and the transmission member is fixed to the object at a plurality of points separated on a straight line parallel to a predetermined direction of the object. It is characterized by being .
[0022]
A seventh aspect of the present invention relates to a strain suppression device that suppresses strain generated in an object. The strain generation element generates a force caused by strain on the object, and the strain generation device is fixed to the object. And a transmission member configured to transmit a force generated by strain of the strain generating element to the object, and the transmission member includes a plurality of slits parallel to a predetermined direction of the object .
[0023]
An eighth aspect of the present invention relates to a distortion suppression device that suppresses distortion generated in an object, and a plurality of distortion generating elements that generate a force due to distortion on the object, and being fixed to the object, And a transmission member that transmits a force generated by the distortion of the strain generating element to the object, and the plurality of strain suppressing elements are separated from each other with a straight line parallel to a predetermined direction of the object. The distortion suppressing device, wherein the distortion suppressing device is disposed on the transmission member, and the transmission member is fixed to the object at a plurality of points on the straight line .
[0024]
A ninth aspect of the present invention relates to a strain suppression device that suppresses strain generated in an object, a plurality of strain generating elements that generate a force caused by strain on the object, and being fixed to the object, A transmission member to which the strain generating element is fixed and transmits a force generated by the strain of the strain generating element to the object, and the strain suppressing element is separated on each of a plurality of straight lines parallel to a predetermined direction of the object. The transmission member is disposed on the transmission member, and the transmission member is fixed to the object at a plurality of points on the straight line .
[0025]
According to a preferred embodiment of the present invention, the transmission member is fixed to the object via a pedestal formed on the transmission member .
[0026]
According to a preferred embodiment of the present invention, the strain suppression element is a piezoelectric element .
[0027]
A tenth aspect of the present invention relates to an exposure apparatus, wherein the object is a moving stage that moves a substrate or an original plate in a semiconductor manufacturing process, and includes the distortion suppressing apparatus described above .
[0028]
The tenth aspect of the present invention is an application step of applying a photosensitive material to a substrate, an exposure step of transferring a pattern to the substrate on which the photosensitive material has been applied in the application step, using the exposure apparatus described above, And a developing step of developing the photosensitive material of the substrate onto which the pattern has been transferred in the exposure step .
[0034]
DETAILED DESCRIPTION OF THE INVENTION
DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments of the invention will be described with reference to the accompanying drawings.
[0035]
The present invention is not limited to the following embodiments. For example, the moving stage is effective for measuring elastic strain and suppressing elastic strain of a structure having elastic characteristics. Further, for example, it is effective for measuring elastic strain and suppressing elastic strain of a wafer stage structure used in a semiconductor exposure apparatus.
[0036]
(First embodiment)
FIG. 1 is a perspective view showing an overview of a strain measurement device and / or a strain suppression device according to a preferred embodiment of the present invention. There are restraining points 2 and 3 on a straight line 3a along the longitudinal direction passing through the approximate center in the short direction of the piezoelectric element 1 with the predetermined direction as the X direction. It is assumed that the direction of strain to be measured or the direction of force to be generated is, for example, the X direction. In this case, the transmission member 4 to which the piezoelectric element 1 is bonded is fixed to the object plane 5 only at the restraint points 2 and 3.
[0037]
When the piezoelectric element 1 is used as a strain measuring device, when the object surface 5 is distorted by elastic vibration, the Y direction component of the elastic strain is not transmitted to the transmission member 4, and only the strain in the X direction is applied to the transmission member 4. The distortion in the X direction is measured by the piezoelectric element 1. Furthermore, when the piezoelectric element 1 is used as a strain suppression device that suppresses and controls the elastic strain of the moving stage surface 5, when a voltage is applied to the piezoelectric element 1, forces in both the X and Y directions are transmitted to the transmission member 4. A force only in the X direction is transmitted to the object plane 5. FIG. 8 is a diagram illustrating an example in which the distortion suppression apparatus and / or measurement apparatus illustrated in FIG. 1 is applied to a moving stage. 1 and 8, the piezoelectric element 1 is attached to the moving stage surface 800 via the transmission member 4 as a strain measuring device 801 and a strain suppressing device 802. In accordance with the amount of strain measured by the strain measuring device 801, a voltage is applied to the strain suppressing device 802 so as to suppress elastic vibration of the moving stage surface 800. Since the elastic vibration of the moving stage surface 800 is reduced in this way, the moving stage device 803 can be positioned at high speed and with high accuracy. In addition, the application of the distortion suppression device and / or measurement device according to a preferred embodiment of the present invention is not limited to only the moving stage. For example, the present invention can be applied to the wafer stage of the conventional semiconductor exposure apparatus shown in FIG. In FIG. 9, the laser interferometer 50 is connected to the surface plate 41. Therefore, the elastic vibration of the surface plate 41 is transmitted to the laser interferometer 50, and the connecting portion between the surface plate 41 and the laser interferometer 50 is elastically strained, so that the wafer stage position cannot be measured accurately. In this case, the application of reducing distortion due to elastic vibration by attaching the piezoelectric element 1 to the connecting portion between the surface plate 41 and the laser interferometer 50 via the transmission member 4 is also conceivable.
[0038]
Further, in FIG. 1, the restraining points for fixing the transmission member 4 to the object plane 5 are not limited to the above two points. As long as it is on the dotted line 3a indicating a straight line parallel to the X-axis in FIG. 1, even if an infinite constraint point is provided, the distortion of the moving stage measured by the strain measuring device and the object for the strain suppressing device to suppress elastic vibration The force applied to is only the X direction component. Therefore, the transmission member 4 can include one or a plurality of restraint points arranged at arbitrary intervals with respect to a predetermined direction. As a restraining method at these restraint points, for example, there is a method of fixing to a hole provided at the restraint point with a screw or a pin. The advantage of this fixing method is that it is easy to remove.
[0039]
(Second Embodiment)
FIG. 2 is a perspective view showing an overview of a distortion suppressing device and / or a measuring device according to a second preferred embodiment of the present invention. A plurality of slits parallel to the straight line 3a along the longitudinal direction passing through the approximate center in the short direction of the transmission member 9 is defined with the predetermined direction as the X direction. As shown in FIG. 2, a piezoelectric element (not shown) is bonded to a one-dot chain line portion 8 on a transmission member 9 having a slit group 6 formed of a plurality of slits arranged in the Y direction. The The transmission member 9 is fixed to an object (for example, a moving stage) at a number of constraint points 7. In this configuration, when the piezoelectric element is used as a strain measuring device, the piezoelectric element measures the strain in the X direction, but the strain in the Y direction is not transmitted to the piezoelectric element by the slit group 6 cut parallel to the X axis. Because of not being measured. Similarly, when a piezoelectric element is used as a strain suppression device, a force only in the X direction is applied to an object (for example, a moving stage). The number of restriction points on the object (for example, the moving stage) of the transmission member 9 may be any number as long as the slit on the transmission member 9 is not cut.
[0040]
(Third embodiment)
FIG. 3 is a perspective view showing an overview of a distortion suppressing device and / or a measuring device according to a third preferred embodiment of the present invention. A plurality of strain suppression devices and / or measurement devices (for example, piezoelectric elements) are separated so as not to overlap a straight line 14 along the longitudinal direction passing through the approximate center in the short direction of the transmission member 10 with the predetermined direction as the X direction. Has been placed. As shown in FIG. 3, the transmission member 10 has a plurality of piezoelectric elements 12 attached thereto. If the object surface, for example, the moving stage surface 13 is constrained by the constraining point 11 on the dotted line 14, the piezoelectric element 12 measures a strain only in the X direction, as in the first embodiment, Or it becomes a distortion suppression apparatus which generate | occur | produces force only to a X direction. The advantage of the transmission member 10 is that a space is formed on the dotted line 14 by dividing it into a plurality of piezoelectric elements 12, and the piezoelectric element 12 is moved by forming a restraint point 11 of the transmission member 10 in this open space. It can be easily fixed to the stage surface 13. Particularly, when the transmission member 10 is fixed with a screw, in the first embodiment, the transmission member 10 is fixed with a screw from the object side, or a hole is formed in the piezoelectric element 1 and fixed to the object with a screw. In the case of the member 10, since the fixed portion with respect to the moving stage surface 13 is opened on the surface, the member 10 can be fixed to the moving stage surface 13 with screws from the transmission member 10 side, and attachment is easy.
[0041]
(Fourth embodiment)
4 and 5 are perspective views showing an overview of a distortion suppressing device and / or a measuring device according to a fourth preferred embodiment of the present invention. The

transmission members

18 and 21 and an object, for example, the moving

stages

19 and 24 are in contact with each other via

pedestals

18a and 21a formed on the

transmission members

18 and 21. 4 and 5 show improvements on the

transmission members

4 and 10 of the first and third embodiments shown in FIGS. The

transmission members

4 and 10 shown in FIGS. 1 and 3 can have many portions in contact with an object, for example, a moving stage, in addition to the vicinity of the restraint points 2, 3 and 11. As a result, there is a portion that makes frictional contact, and when the generated force of the piezoelectric element is transmitted to the moving stage surface, there is a possibility that nonlinear characteristics may be included. The same problem occurs when measuring the distortion of the moving stage. This is not preferable because the control performance deteriorates when a control system for suppressing elastic vibration is assembled. On the other hand, since the

transmission members

18 and 21 shown in FIGS. 4 and 5 are provided with

pedestals

18a and 21a in the vicinity of the restraint points 16, 17, and 22, they do not contact the moving stage except near the restraint points. As a result, the frictional contact portion is reduced, and the control performance of the control system is less likely to deteriorate due to non-linear characteristics.
[0042]
(Fifth embodiment)
FIG. 6 is a perspective view showing an overview of a distortion suppressing device and / or a measuring device according to a fifth preferred embodiment of the present invention. A plurality of strain detection elements are arranged apart from each other so as to intersect with a straight line 30 along the longitudinal direction passing through the approximate center in the short direction of the transmission member 26 with the predetermined direction as the X direction. The transmission member 26 shown in FIG. 6 uses a plurality of piezoelectric elements 27 to open a restraint point portion with an object, for example, a moving stage, similarly to the transmission member 10 shown in FIG. 3 described in the third embodiment. This facilitates attachment to the moving stage. The transmission member 26 is different from the transmission member 10 in FIG. 3 in that the piezoelectric element 27 is bonded between a plurality of restraining points 28. As a result, the piezoelectric element 27 to be bonded can be elongated in the direction (Y direction in FIG. 6) perpendicular to the direction of the force to be generated. As shown in Expression (2), the generated force in the X direction of the piezoelectric element is proportional to the length in the Y-axis direction. Therefore, when the piezoelectric element 27 is bonded like the transmission member 26, an effect of increasing the generated force in the X direction can be obtained. Further, if this transmission member 26 is also provided with a pedestal in the vicinity of the restraint point as shown in FIGS. 4 and 5 described in the fourth embodiment, nonlinear characteristics can be reduced and the control performance of elastic strain is deteriorated. Less.
[0043]
Next, an embodiment in which the distortion measuring apparatus and distortion suppressing apparatus of the present invention are applied to an exposure apparatus used in a semiconductor device manufacturing process will be described.
[0044]
FIG. 10 shows a conceptual diagram of an exposure apparatus used when the distortion measuring apparatus and distortion suppressing apparatus of the present invention are applied to a semiconductor device manufacturing process.
[0045]
An exposure apparatus 100 according to a preferred embodiment of the present invention includes an illumination optical system 101, a reticle 102, a projection optical system 103, a substrate 104, and a moving stage 105. The illumination optical system 101 can use, for example, ultraviolet light using an excimer laser, a fluorine excimer laser, or the like as a light source as exposure light. Light from the illumination optical system 101 is applied to the reticle 102. The light passing through the reticle 102 is focused on the substrate 104 through the projection optical system 103 and exposes the photosensitive material coated on the surface of the substrate 104. The substrate 104 moves to a predetermined position using a moving stage 105 to which the strain measuring device and strain suppressing device of the present invention are applied.
[0046]
FIG. 11 is a flow of an overall manufacturing process of a semiconductor device using the above exposure apparatus. In step 1 (circuit design), a semiconductor device circuit is designed. In step 2 (mask fabrication), a mask is fabricated based on the designed circuit pattern. On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the mask and wafer. The next step 5 (assembly) is called a post-process, and is a process for forming a semiconductor chip using the wafer produced in step 4, and is an assembly process (dicing, bonding), packaging process (chip encapsulation), etc. Process. In step 6 (inspection), the semiconductor device manufactured in step 5 undergoes inspections such as an operation confirmation test and a durability test. Through these steps, the semiconductor device is completed and shipped (step 7).
[0047]
FIG. 12 shows a detailed flow of the wafer process. In step 11 (oxidation), the wafer surface is oxidized. In step 12 (CVD), an insulating film is formed on the wafer surface. In step 13 (electrode formation), an electrode is formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (resist process), a photosensitive agent is applied to the wafer. In step 16 (exposure), the above-described exposure apparatus is used to accurately measure the distortion of the moving stage that occurs when the wafer is moved, and the wafer is precisely moved while greatly reducing the distortion of the object. Is transferred to the wafer. In step 17 (development), the exposed wafer is developed. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.
[0048]
【The invention's effect】
According to the present invention, for example, it is possible to provide a distortion measurement apparatus that accurately measures distortion generated in an object, and a distortion suppression apparatus, exposure apparatus, and device manufacturing method that significantly reduce distortion of the object.
[Brief description of the drawings]
FIG. 1 is a perspective view showing an overview of a strain measurement device and / or a strain suppression device according to a preferred embodiment of the present invention.
FIG. 2 is a perspective view showing an overview of a distortion suppressing device and / or a measuring device according to a second preferred embodiment of the present invention.
FIG. 3 is a perspective view showing an overview of a distortion suppression device and / or a measurement device according to a third preferred embodiment of the present invention.
FIG. 4 is a perspective view showing an overview of a distortion suppressing device and / or a measuring device according to a fourth preferred embodiment of the present invention.
FIG. 5 is a perspective view showing an overview of a distortion suppressing device and / or a measuring device according to a fourth preferred embodiment of the present invention.
FIG. 6 is a perspective view showing an overview of a distortion suppression device and / or a measurement device according to a fifth preferred embodiment of the present invention.
FIG. 7 is a view showing a state where a piezoelectric element sensor is directly bonded to a stage surface of a wafer stage.
8 is a diagram showing an example in which the distortion suppressing device and / or measuring device shown in FIG. 1 is applied to a moving stage.
FIG. 9 is a schematic view showing a configuration of a wafer stage of a conventional semiconductor exposure apparatus.
FIG. 10 is a conceptual diagram of an exposure apparatus used when the distortion measuring apparatus and distortion suppressing apparatus of the present invention are applied to a semiconductor device manufacturing process.
FIG. 11 is a diagram showing a flow of an entire manufacturing process of a semiconductor device.
FIG. 12 is a diagram showing a detailed flow of a wafer process.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Piezoelectric element, 2, 3 Transmission member restraint point, 3a Transmission member center axis, 46 Transmission member, 5 Object surface, 6 Slit group, 7 Restriction point, 8 Piezoelectric element attachment position, 9 Transmission member, 10 Transmission member, 11 Restraint Point, 12 Piezoelectric element, 13 Moving stage surface, 14 Transmission member central axis, 15 Piezoelectric element, 16, 17 Transmission member restraint point, 18 transmission member, 19 Moving stage surface, 20 Transmission member central axis, 21 Transmission member, 22 Transmission Member restraint point, 23 piezoelectric element, 24 moving stage surface, 25 transmission member central axis, 26 transmission member, 27 piezoelectric element, 28 transmission member restraint point, 41 surface plate, 42 Y direction guide, 43 Y stage, 44 air pad, 45 X stage, 46 linear motor, 48 tilt stage, 49 mirror, 50 laser interferometer, 51 stage substrate, 53 wafer, 800 moving stage Stage surface, 801 strain suppression device, 802 strain measurement device, 803 moving stage device

Claims

A strain measurement device that measures the distortion of an object,
A strain detecting element for detecting strain generated in the object;
A transmission member that is fixed to the object, and that transmits the distortion of the object to the distortion detection element by fixing the distortion detection element;
The strain measuring device, wherein the transmission member is fixed to the object at a plurality of points spaced apart on a straight line parallel to a predetermined direction of the object .

A strain measurement device that measures the distortion of an object,
A strain detecting element for detecting strain generated in the object;
A transmission member that is fixed to the object, and that transmits the distortion of the object to the distortion detection element by fixing the distortion detection element;
The transmission member has a plurality of slits parallel to a predetermined direction of the object .

A strain measurement device that measures the distortion of an object,
A plurality of strain detection elements for detecting strain generated in the object;
A transmission member that is fixed to the object, and that transmits the distortion of the object to the distortion detection element by fixing the distortion detection element;
The plurality of strain detection elements are arranged on the transmission member so as to be spaced apart across a straight line parallel to a predetermined direction of the object,
The transmission member is strain measuring apparatus characterized by being fixed to the object at a plurality of points on the straight line.

A strain measurement device that measures the distortion of an object,
A plurality of strain detection elements for detecting strain generated in the object;
A transmission member that is fixed to the object, and that transmits the distortion of the object to the distortion detection element by fixing the distortion detection element;
The plurality of strain detection elements are arranged on the transmission member so as to be separated from each other on a straight line parallel to a predetermined direction of the object,
The strain measuring device, wherein the transmission member is fixed to the object at a plurality of points on the straight line .

The distortion measuring apparatus according to claim 1, wherein the transmission member is fixed to the object via a pedestal formed on the transmission member.

The strain detecting element, the strain measuring device according to any one of claims 1 to 5, characterized in that a piezoelectric element.

The exposure apparatus provided with the distortion measuring apparatus according to claim 1 , wherein the object is a moving stage that moves a substrate or an original in a semiconductor manufacturing process.

A distortion suppression device for suppressing distortion generated in an object,
A strain generating element that generates a force due to strain on the object;
A transmission member that is fixed to the object, and that transmits the force due to the distortion of the strain generating element to the object with the strain generating element fixed thereto;
The distortion suppressing device, wherein the transmission member is fixed to the object at a plurality of points spaced apart on a straight line parallel to a predetermined direction of the object .

A distortion suppression device for suppressing distortion generated in an object,
A strain generating element that generates a force due to strain on the object;
A transmission member that is fixed to the object, and that transmits the force due to the distortion of the strain generating element to the object with the strain generating element fixed thereto;
The distortion suppressing device, wherein the transmission member includes a plurality of slits parallel to a predetermined direction of the object .

A distortion suppression device for suppressing distortion generated in an object,
A plurality of strain generating elements for generating a force due to strain on the object;
A transmission member that is fixed to the object, and that transmits the force due to the distortion of the strain generating element to the object with the strain generating element fixed thereto;
The plurality of strain suppression elements are arranged on the transmission member and spaced apart with a straight line parallel to a predetermined direction of the object,
The distortion suppressing device, wherein the transmission member is fixed to the object at a plurality of points on the straight line.

A distortion suppression device for suppressing distortion generated in an object,
A plurality of strain generating elements for generating a force due to strain on the object;
A transmission member that is fixed to the object, and that transmits the force due to the distortion of the strain generating element to the object with the strain generating element fixed thereto;
The strain suppression element is disposed on the transmission member so as to be separated on a straight line parallel to a predetermined direction of the object,
The distortion suppressing device, wherein the transmission member is fixed to the object at a plurality of points on the straight line .

The distortion suppressing device according to any one of claims 8 to 11 , wherein the transmission member is fixed to the object via a pedestal formed on the transmission member.

The strain suppression device according to any one of claims 8 to 12 , wherein the strain suppression element is a piezoelectric element.

The exposure apparatus provided with the distortion suppressing apparatus according to claim 8, wherein the object is a moving stage that moves a substrate or an original in a semiconductor manufacturing process.

A method for manufacturing a semiconductor device, comprising:
An application process for applying a photosensitive material to the substrate;
An exposure step of transferring a pattern using the exposure apparatus according to claim 7 or 14, to the substrate on which the photosensitive material is applied in the application step;
A developing step of developing the photosensitive material of the substrate on which the pattern has been transferred in the exposure step;
A method for manufacturing a semiconductor device, comprising: