TWI433210B - An exposure apparatus, an exposure method, and an element manufacturing method - Google Patents

Description

Exposure apparatus, exposure method, and component manufacturing method

The present invention relates to a stage device and an exposure device having the stage device. Moreover, the present invention relates to a coordinate correction method and a component manufacturing method of the stage device.

The priority of Japanese Patent Application No. 2005-308326, filed on Oct. 24, 2005, is hereby incorporated by reference.

In a lithography process for manufacturing a micro component (electronic component, etc.) of a semiconductor component or the like, a pattern image of a mask (a reticle, a mask, etc.) is exposed to a substrate coated with a photoresist (wafer) Exposure device on ceramic plate, glass plate, etc.). The exposure apparatus includes, for example, a one-exposure type (still exposure type) projection exposure apparatus such as a stepper, and a scanning exposure type projection exposure apparatus (scanning type exposure apparatus) such as a scanning stepper.

The exposure device includes a stage device. A reflecting surface (mirror surface) is provided on a table portion of the stage device. The reflective surface is used for high-precision position measurement using a light measuring device such as a laser interferometer. The position of the platform is measured and controlled in nanometer units. As the accuracy of the requirements increases, the surface shape of the reflecting surface (convex) and the influence of the thermal deformation of the platform supporting the light measuring device are all issues.

Further, during the repetition of the exposure process, heat is accumulated in the stage, and the table portion and the reflecting surface are thermally deformed. Patent Document 1 discloses a technique for measuring the surface shape of a reflecting surface after each batch (for example, several tens of substrates) to correct the position coordinates of the table portion and the reflecting surface after thermal deformation.

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2005-252246

It takes a considerable amount of time (for example, 20 to 30 minutes) to perform such coordinate correction. During the coordinate correction, the exposure process is essentially stopped.

The present invention has been made in view of the above problems, and an object thereof is to provide a stage device with high-precision position control and a coordinate correction method therefor.

The present invention adopts the following configuration corresponding to each of the drawings showing the embodiment. However, the parenthetical symbol assigned to each element is merely an illustration of the element and is not intended to limit the element.

A first aspect of the present invention provides a stage device comprising: a platform (31); a mobile station (WTB) disposed on the platform (31); and a position information measuring unit (12) For measuring position information of the mobile station (WTB); a deformation amount detecting unit (45) for detecting an amount related to deformation of at least one of the platform and the mobile station; and a correction unit (92) according to the deformation The detection result of the quantity detecting unit corrects the measurement result of the position information measuring unit.

A second aspect of the present invention provides an exposure apparatus for driving a substrate using the stage device. This stage device can precisely move the substrate.

A third aspect of the present invention provides a method for correcting coordinates of a stage device, comprising: a step of measuring position information of the mobile station (WTB) on the platform (31) by a position information measuring unit (12); a step of detecting a quantity (Sm) related to deformation of at least one of the platform and the mobile station (WTB) by a deformation amount detecting unit (45) provided in at least one of the platform and the mobile station; and a computing unit (92) The step of calculating the strain data (ΔYp) from the detected amount related to the deformation; and correcting the position information measured by the position information measuring unit based on the strain amount by the correction unit (92).

A fourth aspect of the present invention provides a method of manufacturing an element using the foregoing exposure apparatus. This manufacturing method enables components to be manufactured with higher precision.

According to the present invention, it is possible to provide a stage device and a coordinate correction method for performing position control with high precision.

Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. In the present embodiment, the present invention is applied to a single exposure type projection exposure apparatus such as a stepper or a scanning exposure type projection exposure apparatus such as a step scanner.

Figure 1 is a block diagram of the functional units constituting the exposure apparatus. In Fig. 1, a chamber for accommodating an exposure device is omitted. As the light source for exposure, a laser light source 1 composed of KrF excimer laser light (wavelength: 248 nm) or ArF excimer laser light (wavelength: 193 nm) is used. As the light source for exposure, it is also possible to use a laser beam that emits an ultraviolet band in an oscillation phase such as an F ₂ laser (wavelength 157 nm) or a near-infrared laser light that emits a solid laser light source (YAG or a semiconductor laser or the like). The vacuum ultraviolet ray-harmonic laser light obtained by wavelength conversion can also be used, such as a mercury discharge lamp which is often used in such an exposure apparatus. In other words, as the light for exposure, for example, far ultraviolet light (DUV light) such as a bright line (g line, h line, i line) emitted from a mercury lamp, ArF excimer laser light (wavelength 193 nm), and F ₂ Ray are used. Vacuum ultraviolet light (VUV light) such as light (wavelength 157 nm).

Illumination light (exposure light) IL from the laser light source 1 passes through a homogenizing optical system 2 composed of a lens system and a fly-eye lens system, a beam splitter 3, a variable dimmer 4 for light amount adjustment, and a mirror 5. The relay lens system 6 illuminates the reticle blind 7 with a uniform illuminance distribution. The illumination light IL that is restricted to a predetermined shape (a single exposure type, for example, a square shape, and a scanning exposure type, for example, a slit shape) is irradiated to the reticle R as a reticle through the imaging system. An image of the opening of the reticle blind 7 is imaged on the reticle R. The illumination optical system 9 includes a homogenizing optical system 2, a beam splitter 3, a variable dimmer 4 for adjusting the amount of light, a mirror 5, a relay lens system 6, a reticle blind 7, and an imaging lens system 8 Composition.

An image of a portion of the circuit pattern region (pattern) formed in the reticle R that is illuminated by the illumination light is projected onto the substrate (sensing substrate or photosensitive) by a projection optical system PL that is telecentric on both sides and has a projection magnification β of a reduction magnification. The wafer (substrate) W coated with photoresist. Although the projection optical system PL is a refractive system, other folding and reflecting systems and the like may be used. In addition to the wafer W, a glass substrate for liquid crystal, a ceramic substrate for a magnetic head, or the like can be applied. In the following description, the optical axis AX parallel to the projection optical system PL is taken as the Z axis, and in the plane perpendicular to the Z axis, the paper plane parallel to the plane of FIG. 1 is the X axis, and the plane perpendicular to the paper surface of FIG. 1 is the Y axis. . When the projection exposure apparatus of this example is in the scanning exposure type, the direction along the Y-axis (Y direction) is the scanning direction of the reticle R and the wafer W during scanning exposure, and the illumination area on the reticle R is along the edge. The elongated shape of the X-axis (non-scanning direction).

The reticle R disposed on the object surface side of the projection optical system PL is held by the reticle stage RST (mask holder) by vacuum suction or the like. The moving coordinate position (the X-direction, the Y-direction position, and the rotation angle around the Z-axis) of the reticle stage RST is fixed to the projection optics by the moving mirror Mr for the reticle fixed to the reticle stage RST. A reference mirror (not shown) on the upper side of the system PL and a laser interferometer system 10 for the oppositely disposed reticle are successively measured. Further, the laser interferometer system 10 for reticle is actually configured as a three-axis laser interferometer having at least one axis in the X direction and two axes in the Y direction.

Further, the movement of the reticle stage RST is performed by the reticle drive system 11 constituted by a linear motor or a micro-actuator. The reticle is supplied to the stage control unit 14 by the measurement information of the laser interferometer system 10, and the stage control unit 14 controls the measurement information based on the measurement information and from the main control system (computer constituted by the operation of the overall control device) 20 Information (input information) controls the action of the drive system 11 for the reticle.

The wafer W disposed on the image plane side of the projection optical system PL is held by the wafer stage WST (movable stage) by vacuum suction or the like. The wafer stage WST includes: a wafer table WTB that adsorbs and holds the wafer W (details will be described later), a Z (position in the Z direction) for controlling the wafer W, and a Z angle around the X axis and the Y axis. Leveling mechanism (details later).

In the case of the single exposure type, the wafer stage WST is stepwise moved in the X direction and the Y direction on the guide surface. In the case of the scanning exposure type, the wafer stage WST is mounted on the guide surface, and is capable of moving at least at a constant speed in the Y direction during scanning exposure, and is stepwise moved in the X direction and the Y direction. The moving coordinate position (the X-direction, the Y-direction position, and the rotation angle around the Z-axis) of the wafer stage WST is a reference mirror Mf fixed to the lower portion of the projection optical system PL, a moving mirror Mw fixed to the wafer stage WST, And the laser interferometer system 12 configured in this alignment is successively measured. The moving mirror Mw, the reference mirror Mf, and the laser interferometer system 12 are actually configured as a three-axis laser interferometer having at least two axes in the X direction and one axis in the Y direction. Further, the laser interferometer system 12 actually includes a two-axis laser interferometer for measuring the rotation angle (tilt and pitch) of the X-axis and the Y-axis.

In Fig. 1, the movement of the wafer stage WST is performed by a drive system 13 composed of an actuator such as a linear motor and a voice coil motor (VCM). The measurement information of the laser interferometer system 12 is supplied to the stage control unit 14, and the stage control unit 14 controls the operation of the drive system 13 based on the measurement information and control information (input information) from the main control system 20.

On the side of the lower portion of the projection optical system PL, an autofocus sensor 23A, 23B in an oblique incidence mode is fixed. The stage control unit 14 calculates the amount of defocus from the image plane of the projection optical system PL at the plurality of measurement points using the traverse amount information of the slit image, and drives the wafer stage WST in an autofocus manner during exposure. The Z leveling mechanism is such that the defocus amount is within the established control accuracy.

The stage control unit 14 includes: controlling the reticle drive system 11 to the optimal reticle side control circuit according to the measurement information of the laser interferometer system 10 for the reticle, and according to the laser interferometer system 12 The measurement information controls the wafer drive system 13 to the optimal wafer side control circuit. When the projection exposure apparatus of this embodiment is of the scanning exposure type, when the wafer W and the reticle R are simultaneously scanned during scanning exposure, the control circuits of the two parties coordinately control the respective driving systems 11, 13. The main control system 20 exchanges commands and parameters with each control circuit in the stage control unit 14, and performs optimal exposure processing in accordance with a program designated by the operator. Therefore, an operation panel unit (including an input element and a display element) (not shown) that constitutes an interface between the worker and the main control system 20 is provided.

When exposing, the alignment between the reticle R and the wafer W must be performed in advance. Therefore, the projection exposure apparatus of FIG. 1 is provided with a reticle alignment system (RA system) 21 for setting the reticle R at a predetermined position, and an off-axis for detecting the mark on the wafer W. Alignment system 22.

In FIG. 1, in the case of the one-shot type, the pattern of the reticle R is projected onto the wafer W through the projection optical system PL by the illumination of the illumination light IL by a step & repeat method. The operation of the irradiation region and the operation of moving the wafer W in the X direction and the Y direction by the wafer carrier WST. On the other hand, in the case of the scanning exposure type, after the illumination light IL is irradiated onto the reticle R, one of the reticle R patterns is projected onto the wafer W by the image of the projection optical system PL. In the state of the region, the reticle stage RST and the wafer stage WST are synchronously moved (synchronously scanned) in the Y direction by the projection magnification β of the projection optical system PL as a speed ratio, and the pattern of the reticle R is made. The image is transferred to the illuminated area. Thereafter, the irradiation of the illumination light IL is stopped, and the operation of stepwise moving the wafer W in the X direction and the Y direction through the wafer stage WST and the scanning exposure operation are performed in a step-and-scan manner. The pattern of the reticle R is transferred to all of the illumination areas on the wafer W.

Next, the configuration and operation of the wafer stage WST of the projection exposure apparatus of this example and the wafer stage system including the drive mechanism will be described in detail.

Fig. 2 shows a wafer stage system of the projection exposure apparatus of this embodiment. In Fig. 2, for example, it is placed on a floor FL (installation surface) of a clean room in a semiconductor component manufacturing factory, and is provided through a vibration isolating device (not shown). A flat platform 31 (base member). The upper surface of the wafer stage 31 is processed into a highly flat guiding surface 31a which is perpendicular to the Z axis and substantially parallel to the horizontal plane.

The wafer stage WST is mounted on the guide surface 31a so as to be movable in the X direction and the Y direction through the air bearing. The wafer stage WST includes a wafer table WTB that adsorbs and holds the wafer stage WST (object), and a Z that controls the Z-direction position of the wafer table WTB and the tilt angle (tilt and pitch) around the X-axis and the Y-axis. Leveling mechanism 55. Further, a Y-axis guide 33Y that is movable in the X direction and substantially parallel to the Y-axis is provided above the guide surface 31a, and a Y-axis guide 33Y is disposed above the Y-axis guide 33Y so as to be movable in the Y direction and substantially parallel to the X-axis. X-axis guide 33X. The Y-axis guide 33Y and the X-axis guide 33X are substantially orthogonal. A cylindrical Y-axis slider 39 that can move freely in the Y direction is attached to the outside of the Y-axis guide 33Y, and a cylindrical X-axis slider 40 that can move freely in the X direction is attached to the outside of the X-axis guide 33X. . The inner faces of the sliders 39 and 40 are respectively in contact with the outer faces of the guide members 33Y and 33X through air bearings (thin gas layers such as air), whereby the sliders 39 and 40 can smoothly move along the guide members 33Y and 33X, respectively. Further, the sliders 39 and 40 are coupled to the Z leveling mechanism 55, and the wafer table WTB is loaded on the Z leveling mechanism 55 in a state in which the relative positional relationship between the sliders 39 and 40 can be controlled.

A plurality of magnets are disposed on the inner faces of the fixing members 37YC and 37YD at a predetermined interval in the Y direction. A pair of X-axis linear motors 44XA and 44XB are formed by the movable members 36XA and 36XB and the fixing members 36XC and 36XD. The pair of X-axis linear motors drive the Y-axis guide 33Y in the X direction as the opposite guiding surface 31a. Moving agencies. Further, the movable members 37YA and 37YB and the fixing members 37YC and 37YD constitute a pair of Y-axis linear motors 44YA and 44YB, and the pair of Y-axis linear motors drive the X-axis guide 33X in the Y direction as the opposite guiding surface 31a. Coarse motion mechanism.

In Fig. 2, a Z leveling mechanism 55 is coupled to the sliders 39 and 40, and a wafer table WTB is loaded through the air bearing on the Z leveling mechanism 55. Further, the wafer table WTB and the Y-axis slider 39 are respectively transmitted through the X-axis actuators 53XA, 53XB constituted by the voice coil motor and the X-axis actuator 54X constituted by the EI core to control the relative position. The state is connected to be non-contact, and the wafer table WTB and the X-axis slider 40 are respectively transmitted through a Y-axis actuator 53YA, 53YB composed of a voice coil motor and a Y-axis actuator 54Y composed of an EI core. The non-contact is connected in a state in which the relative position can be controlled.

Further, the 53XA, 53XB, 53YA, 53YB, and the EI core type actuators 54X, 54Y, which are constituted by the voice coil motor, are disposed in the X-axis slider 40 or the Y-axis slider, respectively, in the coil portions that receive power supply. 39 side (so-called magnetic rotating, moving magnet). Therefore, it is not necessary to connect the wrapper WTB with a line for supplying electric power (power supply line, etc.) and a refrigerant line required for cooling the coil.

At this time, the average positions of the wafer table WTB with respect to the sliders 39, 40 in the X direction and the Y direction are controlled by the actuators 54X and 54Y. Further, fine adjustment of the X-direction position of the wafer table WTB and fine adjustment of the rotation angle around the Z-axis by the average value and balance of the X-direction thrust of the X-axis of the actuator 53XA and XB are performed by the actuator 53YA. The average value of the thrust in the Y direction of YB is used to finely adjust the position of the wafer table WTB in the Y direction. That is, the actuators 53XA, 54X, 53XB, 53YA, 54Y, 53YB can be regarded as driving the wafer table WTB relative to the sliders 39 and 40 in a predetermined narrow range relative to the X direction, the Y direction, and the Z axis. a micro-motion mechanism in the direction of rotation.

In Fig. 2, the two laser beams separated from the laser interferometer 12X in the Y direction are mirror-processed on the side of the wafer table WTB in the -X direction, and are mirror-finished in the -Y direction of the wafer table WTB. The laser beam is irradiated from the laser interferometer 12Y on the side, and the X-direction, the Y-direction coordinate of the wafer table WTB, and the rotation angle around the Z-axis are measured by the laser interferometers 12X and 12Y. The laser interferometers 12X, 12Y correspond to the laser interferometer system 12 of FIG. Further, linear motors 44XA, 44XB, 44YA, 44YB (coarse motion mechanism) and actuators 53XA, 54X, 53XB, 53YA, 54Y, 53YB (micro-motion mechanism) correspond to the drive system 13 of FIG.

The coarse motion mechanism and the fine motion mechanism are driven by the stage control mechanism 14 of Fig. 1 based on the measurement information of the laser interferometers 12X, 12Y and the like. The coarse motion mechanism can be used for stepping movement of the wafer table WTB in the single exposure type and the scanning exposure type, and can be further used in the scanning exposure type for the constant speed movement of the wafer table WTB during synchronous scanning. The micro-motion mechanism can make the positioning error for the wafer table WTB in the one-exposure type and the scanning exposure type, and can be further used in the scanning exposure type to correct the synchronization error of the wafer table WTB during the scanning exposure.

Figure 3 is the back side of the wafer table WTB. Further, in order to facilitate understanding of the following description, the faces of the actuator 54X, the actuator 54Y, and the Z leveling mechanism 55 described in FIG. 2 in contact with the air bearing are not depicted in FIG. The material of the wafer table WTB (stage) is formed of a material that is not easily deformed and has a high rigidity and a high rigidity ratio (a value obtained by dividing the rigidity by the weight per unit area). For example, the material of the wafer table WTB can be ceramic. Since the value measured by the laser interferometer 12 differs depending on the thermal expansion during exposure, the ceramic is preferably a ceramic having a low expansion ratio, specifically, a glass ceramic.

As can be seen from Fig. 3, the weight of the wafer table WTB is as thin as possible, and is strengthened by a plurality of ribs extending in the X direction and the Y direction. The ribs extending in the X direction and the Y direction are formed into nine block chambers 42 in FIG. In each of the block chambers 42, a sensor for detecting the amount of deformation of the micro-elasticity generated by the wafer table WTB is attached. Specifically, a strain gage 45 that can be detected in picometer units using a change in impedance of electricity is attached. In each of the block chambers 42, for detecting the strains in the X direction, the Y direction, and the Z direction, three uniaxial strain gauges 45 are attached. Of course, since the strain gauge also has a strain gauge capable of measuring the cross-type of the orthogonal two-axis direction, the two-axis direction of the orthogonal direction and the direction of the intermediate axis of the rosette strain gage, etc., the visual strain gauge Kind, change the number of strain gauges 45 attached. In order to detect in detail the slight expansion and contraction generated by the wafer table WTb, it is preferable to apply the strain gauge 45 as much as possible in the X direction and the Y direction.

As mentioned above, although the wafer table WTB is formed of a material such as glass ceramic and has a small thermal expansion, the wafer table WTB still produces a small amount of swelling during transfer exposure. The strain gauge 45 detects the slight thermal expansion of the micrometer.

A power receiving unit 46 and a transmitting and receiving unit 47 are provided on the side wall of the wafer table WTB. The power receiving unit 46 is configured by an electromagnetic induction coil, and specifically, an E-type core or a pot-core can be applied. With this configuration, the power receiving unit 46 receives power from the fixed-side power supply unit 48 (see FIG. 4) in a non-contact manner. The transmitting and receiving unit 47 is configured by using an optical coupler such as infrared rays or a radio wave transceiver using weak electric waves. The transceiver unit 47 communicates with the fixed side transceiver unit 49 (see FIG. 4). The transmitting and receiving unit can use two or more types of frequencies or frequency modulation to transmit and receive signals by using an optical coupler such as infrared rays or a radio wave transceiver using weak electric waves. The transmission device of the present invention includes, for example, a power receiving unit 46, a transmission/reception unit 47, a power supply unit 48, and a fixed-side transmission unit 49.

As illustrated in Fig. 2, the wafer table WTB can be positionally controlled in a non-contact manner, whereby the influence of vibration or the like from disturbance can be reduced. On the other hand, since the wafer table WTB is preferably non-contact, it is avoided that the power supply line and the communication line are in contact with the wafer table WTB and the outside thereof, and the power receiving unit 46 and the power supply unit 47 are configured to Contact methods for power supply and signal supply.

Figure 4 is a block diagram of the electrical system of the wafer table WTB. The main control system 20 (and the stage control system 14, hereinafter, described in the main control system 20) as the fixed side on the fixed installation side, and the wafer table WTB as the movement on the separation side. Further, a dot chain line of Fig. 4 indicates a non-contact or separated state.

A power supply unit 90 and a computing unit 92 are provided in the main control system 20, and a power supply unit 48 connected to the power supply unit 90 and mounted to the slider 39 or 40 for power supply is provided, and is connected to the computing unit 92 and installed. The fixed side transceiver portion 49 of the slider 39 or 40. The fixed side transceiver unit 49 sends the control signal to the opposite side transceiver unit 47 to receive the detection signal of the strain gauge 45. The power supply unit 90 energizes the commercial power supply 200V or 100V with a power transistor switch at a high frequency. The voltage excited by the high frequency is sent to the electromagnetic induction coil (the power supply portion 48). As the electromagnetic induction coil, an E-shaped core or a pot core can be used. The fixed-side transmitting and receiving unit 49 is configured by using an optical coupler such as infrared rays or a radio wave transceiver using weak electric waves. When an optical coupler such as an infrared ray or a radio wave transceiver using a weak electric wave is used, two or more frequencies can be used, or frequency modulation can be applied, and signals can be superimposed and transmitted.

Further, the coils of the power supply unit 48 and the fixed side transmission unit 49 and the coils of the power receiving unit 46 and the transmission and reception unit 47 may be used in combination, and the coil of the power supply unit and the signal transmission/reception coil may be shared by both.

A power receiving unit 46 (electromagnetic induction coil) is provided on the wafer table WTB as a power source input to the strain gauge 45 and a power source for driving the transceiver unit 47. The primary side (the power supply unit 48) of the transmission device is excited by a rectangular wave (or sine wave) inverter, so that the secondary side (power receiving unit 46) generates a corresponding primary and secondary winding. The rectangular wave (or sine wave) voltage of the line ratio. The high frequency from the electromagnetic induction coil (power receiving unit 46) is rectified by the rectifier circuit in the control unit 94, and becomes a DC voltage via a power switch or the like, and a DC voltage of 1 V to 5 V is input to the Wheatstone bridge circuit 96. Terminal. Moreover, the rectified DC voltage also becomes the input power of the transceiver unit 47. The strain gauge 45 is connected to the Wheatstone bridge circuit 96, and the output corresponding to the impedance change (the strain Sm) is taken out. The output of the fetch is sent from the transmitting and receiving unit 47 to the fixed side transmitting and receiving unit 49, and the correcting unit in the calculating unit 92 calculates the strain data of the wafer table WTB (the value calculated from the plurality of strains Sm). Further, the correction unit may be provided in the wafer table WTB, and the calculated strain data may be sent from the transmission/reception unit 47 to the fixed-side transmission unit 49. The control unit 94 applies an input voltage to the Wheatstone bridge circuit 96 in accordance with the sampling period. The sample may be sampled after each transfer of the wafer W, or may be sampled multiple times in the transfer exposure of one wafer W. In the past, after each batch (tens of sheets), the surface shape (convex) of the moving mirror (reflecting surface) was measured and corrected. This program is no longer needed, but can be used on each wafer, or every After the secondary transfer exposure (each exposure exposure), the surface shape of the surface of the moving mirror (reflecting surface) that can measure the WTB strain of the wafer table is grasped. Therefore, the positional accuracy of the wafer W can be improved more than at present.

Fig. 5 is a plan view of the wafer table WTB capable of maintaining the movement of the wafer W as viewed from above. The actuator is not shown in the figure. In FIG. 5, a reflecting surface Mw (MwZ, MwY) is disposed at two edge portions perpendicular to each other in a rectangular wafer table WTB. Further, after FIG. 5, for convenience of explanation, the position of the laser interferometer 12Y is changed to be located on the opposite side of the wafer table WTB as compared with the position shown in FIG.

On the wafer table WTB, a reference member 300 is disposed at a predetermined position outside the wafer W. The reference member 300 is provided with a reference mark PFM detected by the alignment system 22 and a reference mark MFM detected by the reticle alignment system 21 in a predetermined positional relationship. The upper surface 301A of the reference member 300 is substantially a flat surface, and is disposed substantially at the same height (same surface height) as the surface of the wafer W held by the wafer table WTB and the upper surface of the wafer table WTB. The upper surface 301A of the reference member 300 may also function as a reference surface of a focus detection system (e.g., autofocus sensors 23A, 23B).

The alignment system 22 also detects alignment marks formed on the wafer W. As shown in FIG. 5, a plurality of irradiation regions S1 to S24 are formed on the wafer W, and the alignment marks are provided on the wafer W corresponding to the plurality of irradiation regions S1 to S24. Further, in Fig. 5, although the respective irradiation regions are shown adjacent to each other, they are actually separated from each other, and the alignment marks are provided on the line of the separation region.

Further, on the wafer table WTB, an illuminance unevenness sensor 400 as a measuring sensor is disposed at a predetermined position outside the wafer W. The illuminance unevenness sensor 400 is provided with an upper plate 401 having a rectangular shape in plan view. The upper surface 401a of the upper plate 401 is a substantially flat surface, and is disposed to be substantially the same height (same surface height) as the surface of the wafer W held by the wafer table WTB and the upper surface of the wafer table WTB.

Further, on the wafer table WTB, a space image measuring sensor 500 is provided at a predetermined position outside the wafer W. The space image measuring sensor 500 is provided with an upper plate 501 having a rectangular shape in plan view. The upper surface 501a of the upper plate 501 is a substantially flat surface, and is disposed substantially at the same height (same surface height) as the surface of the wafer W held by the wafer table WTB and the upper surface of the wafer table WTB.

Further, although not shown, an irradiation amount sensor (illuminance sensor) is also provided on the wafer table WTB, and the upper surface of the irradiation amount sensor is disposed on the wafer held by the wafer table WTB. The W surface and the top of the wafer table WTB are approximately the same height (same face height).

The -X side end portion and the +Y side end portion of the rectangular wafer table WTB are respectively provided with a reflecting surface MwX formed along the Y-axis direction and substantially perpendicular to the X-axis direction, and formed along the X-axis direction and substantially perpendicular to Reflecting surface MwY in the Y-axis direction. A laser interferometer 12X constituting the laser interferometer system 12 is provided at a position opposite to the reflecting surface MwX. The light beam BX from the laser interferometer 12X (for detecting the position in the X-axis direction (distance change)) is vertically projected on the reflecting surface MwX, and is vertically projected from the laser interferometer 12Y on the reflecting surface MwY (for detecting the Y-axis direction) The position (distance change) of the beam BY. The optical axis of the beam BX is parallel to the X-axis direction, and the optical axis of the beam BY is parallel to the Y-axis direction, which are orthogonal (vertical crossing) to the optical axis AX of the projection optical system PL.

(Measurement method of the surface shape of the reflecting surface)

Hereinafter, an example of a method of measuring the surface shape (concavity and convexity, inclination) of the reflection surfaces MwX and MwY will be described.

Before the transfer exposure of the first wafer W is performed, the wafer table WTB is at a predetermined temperature, and there is no deformation due to thermal expansion or the like. In this state, as shown in FIG. 6, the wafer table WTB is moved by the main control system 20 from the start position PSTE toward the intermediate position PSTM in the X-axis direction. During this movement, the main control system 20 acquires data for calculating the surface shape of the reflecting surface MwY. That is, the main control system 20 moves the wafer table WTB from the start position PSTE to the -X direction to the intermediate position PSTM while monitoring the measured values of the laser interferometers 12X, 12Y. This movement is performed in the order of acceleration after the start of the movement, constant speed movement, and deceleration just before the end of the movement. At this time, the acceleration belt and the speed bump are slightly reduced, and the speed is almost constant.

In the movement of the wafer table WTB, the main control system 20 performs sampling of the measured values of the laser interferometers 12Y and 12X in synchronization with the sampling timing of each predetermined number of measurements of the laser interferometer 12X, in the following manner. The surface shape (concavity and convexity or inclination data) for calculating the surface shape of the reflection surface MwY was calculated.

Hereinafter, a method of calculating the surface shape of the reflecting surface MwY will be described with reference to Fig. 8 .

Further, as described above, the interferometer actually measures the amount of rotation of the reflection surfaces MwX and MwY with reference to the fixed mirror (the aforementioned reference mirror), but here is a simplified explanation, as shown in FIG. The gauge 12Y detects the inclination (rotation amount and amount of curvature) of the reflection surface MwY as a surface shape based on the reference line RY which is assumed to be fixed.

In Fig. 8, the distance between the reference line RY and the reflection surface MWY is Ya (the average value Ya measured by the measured values Y θ 1 and Y θ 2 Ya = (Y θ 1 + Y θ 2)/2), and the reflection at the position The amount of rotation (inclination angle, bending angle) of the surface MWY is θ Y(x). The laser interferometer 12Y measures the measured values Y θ 1 and Y θ 2 of the reflecting surface MwY on the reference line RY at two points apart from the SY in the X-axis direction to measure the measured value Y θ(x) of the two distances. That is, the measured value Y θ(x) shown by the following formula (1) is measured.

Y θ(x)=Y θ 2-Y θ 1.........(1)

Here, the main control system 20 starts measurement when the reflection surface MwY is located at the reference point Ox in the X-axis direction, that is, when the light beam BY of the laser interferometer 12Y is incident on the fixed point O on the reflection surface MwY. Moreover, this time point is the time point at which the wafer table WTB ends the acceleration. At this time, the main control system 20 resets the measured values of the laser interferometer 12X and the laser interferometer 12Y to zero. This reset state is visually displayed in the lower half of FIG.

In this case, since the amount of rotation (tilt angle) θ Y(x) of the moving mirror is at most a minute angle of about 1 to 2 seconds, and the interval SY is from 10 mm to several tens of mm, the angle θ Y(x) The approximate value can be taken as follows.

θ Y(x)=Y θ(x)/SY......(2)

On the other hand, the Y coordinate value of the reflection surface MwY at the reference point Ox of the reflection surface MwY is the basis of the unevenness amount ΔY(x) of the reference (ΔY(x)=0), and the reference point Ox can be set to x=0. It is obtained by the following formula (3).

However, in practice, since it is possible to cause a wobble in the wafer table WTB during movement, ΔY(x) includes an error portion due to the amount of deflection in addition to the unevenness caused by the inclination of the reflecting surface MwY. Therefore, it is necessary to subtract the error portion due to the amount of deflection from the value obtained by the above formula (3).

At this time, since the wafer table WTB moves in one dimension only in the X-axis direction, the two beams BX θ 1 and BX θ 2 of the laser interferometer 12X continue to be projected on substantially the same point on the reflection surface MwX. In this case, since the value of the laser interferometer 12X is reset at the reference point Ox as described above, the value of the laser interferometer at the position x is the wafer table WTB based on the reference point Ox. The amount of deflection X θ(x).

Therefore, the measured value X θ(x) of the laser interferometer 12x (corresponding to the measured value θ Y(x) of the laser interferometer 12Y used for calculating the unevenness amount ΔY(x) of the reflecting surface MwY) is performed. The surface shape DY1(x) of the reflection surface MwY is obtained by the correction and calculation of the following formula (4).

The main control unit 20 performs the calculation of the above equation (4) each time the data θ Y(x) and X θ(x) are sampled, and stores the concave and convex amount DY1(x) corresponding to the reflection surface MwY of each sampling point. In the memory MRY.

At this time, the final sample data of the operation object of the above formula (4) corresponds to the data of X+=L. The time point of X=L is set to coincide with the point at which the wafer table WTB starts to decelerate. Moreover, strictly speaking, the impact of the amount of pitch should also be included in the calculation.

As described above, when measuring the surface shape of the reflecting surface MwY disposed substantially in the X-axis direction, by moving the wafer table WTB to a plurality of positions in the X-axis direction and measuring a plurality of pieces of information corresponding to the plurality of positions, That is, the surface shape of the reflecting surface MwY can be measured. Further, as described above, in the X-axis direction movement of the wafer table WTB, the reflection surface MwY is irradiated to the reflection surface MwY substantially parallel to the Y-axis direction by the laser interferometer 12Y for measuring the position information of the wafer table WTB. The strip beam receives the reflected light from the reflecting surface MwY, and the main control system 20 can measure the surface shape of the reflecting surface MwY with good efficiency according to the light receiving result of the receiver.

Next, as shown in FIG. 7, the main control system 20 moves the wafer table WTB from the intermediate position PSTM to the final position PSTL in the -Y direction while monitoring the measured values of the laser interferometers 12X, 12Y. In this case, it is also performed in the order of acceleration after the start of the movement, constant speed movement, and deceleration just before the end of the movement. At this time, the acceleration belt and the speed bump are very small, almost all of which are constant speed belts. The surface shape of the reflecting surface MwX can also be measured in the same manner as the surface shape of the reflecting surface MwY.

(Method for calculating strain data of wafer table WTB)

Next, since the surface shape of the reflecting surface is obtained, the transfer exposure of the wafer W is started. The amount of deformation of the wafer table WTB is calculated by straining the exposure of each wafer W. Hereinafter, an example of calculating the amount of deformation, that is, the amount of strain, will be described with reference to Fig. 9 .

In Fig. 9, the strain data ΔYp in the Y direction at the point p in the X direction is obtained. Further, the broken line indicates the partial wall surface and the rib portion of the wafer table WTB which is completely undeformed, and the solid line indicates the partial wall surface and the rib portion of the wafer table WTB in the state after the expansion deformation. The reflecting surface MwY is formed on the wall surface to project a laser beam of the laser interferometer 12Y. A plurality of (n) strain gauges 45 are attached to the back of the wafer table WTB. In Fig. 9, three strain gauges 45 for detecting the amount of deformation in the Y direction are shown. The strain gauges 45 are attached to the predetermined positions, which are respectively associated with the strain data in the Y direction at the point p in the X direction. For example, the output signal of the strain gauge 45 for measuring the amount of deformation in the Z direction also affects the strain data ΔYp. The influence of each strain gauge 45 on the p point is set to a coefficient Kp. Further, the output of each strain gauge 45 is set to a strain amount Sm (m is an integer of 1 or more and n or less). Thus, it can be expressed by the following formula (5).

The coefficient Kp can be obtained by finite analysis or experimental analysis, etc., depending on the attachment position of the strain gauge 45, the measurement direction of the strain gauge 45 (X direction, Y direction, or Z direction).

Since the surface shape DY1(x) of the reflecting surface MwY is obtained by the equation (4), when the strain data ΔYp is subtracted, the current net surface shape MDY1(x) can be obtained by the equation (6).

MDY1(x)=DY1(x)-△Y(x).........(6)

(Transfer exposure using strain data)

Next, a flow example of transfer exposure using strain data will be described using FIG.

In step S102, in order to check the state of the wafer table WTB before the thermal deformation, the laser beam is irradiated to the reflection surface MwX or the reflection surface MwY from the laser interferometers 12X and 12Y, and the wafer table WTB is moved in the X direction or the Y direction.

In step S104, the surface shape of the reflecting surface MwX or the reflecting surface MwY is calculated from the position information acquired by the laser interferometers 12X and 12Y.

In step S106, a batch of the first wafer is loaded on the wafer table WTB, moved to the projection optical system PL, and the pattern of the reticle R is transferred to the wafer W. In step S108, the power supply unit 48 and the power receiving unit 46 are supplied to the strain gauge 45 and the transmission and reception unit 47 in a non-contact manner. This power supply is constantly carried out during transfer exposure.

In step S110, the strain gauge of the strain gauge is detected every sampling period (for example, at each transfer number of shots, every certain time or every wafer). The detected strain data is sent from the transmitting unit to the correction unit.

In step S112, the correction unit in the calculation unit 92 calculates the strain data from the strain amount, and adds the strain data to the surface shape of the reflection surface MwX or the reflection surface MwY. Further, as illustrated in FIG. 4, the correction unit may be provided in the wafer table WTB, and the calculated strain data may be sent from the transmission/reception unit 47 to the fixed-side transmission unit 49.

In step S114, the pattern of the reticle R is transferred to expose the wafer W by using the shape of the moving mirror surface plus the value of the strain data.

Of course, the present invention is not limited to the above embodiments, and various configurations can be adopted without departing from the scope of the invention. In addition, although the above description is directed to the wafer stage, it is of course applicable to the reticle stage. Further, the strain gauge 45 may be attached to the stage 31 without being attached to the wafer table WTB. This is because the position of the laser interferometer 12 changes when the platform 31 is deformed.

Further, it is also possible to detect the amount of deformation of the mobile station and the platform in the Z direction, and correct the measurement result of the position information (for example, the focus position) of the mobile station (wafer surface) based on the detection result. For example, a configuration in which a moving mirror is provided on the mobile station in order to measure the position of the mobile station in the Z direction by an interferometer may be employed, but the same may be applied to the case where the interferometer is used as the X-direction and Y-direction position measurement. This effect is suppressed by the deformation of the moving mirror in the Z direction.

In addition, although the strain gauge is used as the deformation amount detecting unit, the present invention is not limited thereto, and any other means may be used as long as it can measure the amount of deformation.

The moving mirror Mr for the reticle stage is not limited to the plane mirror, and may include a retroreflector or a retroreflector, or may be used instead of fixing the moving mirror to the reticle stage. The end surface (side surface) of the reticle stage is mirror-formed to form a reflective surface. Further, the reticle stage can be configured to be slightly squeezable as disclosed in Japanese Laid-Open Patent Publication No. Hei 8-130179 (corresponding to U.S. Patent No. 6,721,034).

Further, the position of the wafer stage in the Z-axis direction and the rotation information in the θ X and θ Y directions are measured by the wafer stage laser interferometer 12, and are disclosed, for example, in Japanese Patent Laid-Open Publication No. 2001-510577. (corresponds to International Publication No. 1999/28790 brochure). Further, instead of fixing the moving mirror to the wafer stage, for example, a reflecting surface formed by mirror-processing a part (side surface, etc.) of the wafer stage may be used.

When the position information of the Z axis, the θ X and the θ Y direction of the wafer W can be measured by the laser interferometer 12, the focus sensors 23A, 23B can be set so that the Z axis can be measured during the exposure operation of the wafer W The positional information of the direction is configured to control the position of the wafer W in the Z-axis, θ X, and θ Y directions using at least the measurement result of the laser interferometer 12 during the exposure operation.

Further, the present invention is also applicable to an exposure apparatus and an exposure method which do not use the projection optical system PL. Even in the case where the projection optical system is not used, the light for exposure is irradiated onto the wafer through an optical member such as a reticle or a lens.

Further, the present invention is also applicable to, for example, a liquid immersion type exposure apparatus. In the liquid immersion type exposure apparatus, the wafer or the wafer stage holding the wafer may be deformed by the influence of the liquid. In this case, by using the present invention, the influence of the liquid can be suppressed by measuring the amount of deformation with respect to the moving table.

Regarding the immersion exposure apparatus, it has been disclosed in International Publication No. 99/49504. In addition, the present invention is also applicable to exposure in a state where the entire surface of the substrate to be exposed is immersed in a liquid as disclosed in Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. Liquid immersion exposure device.

Further, the substrate of each of the above embodiments can be applied to a glass substrate for a display element, a ceramic wafer for a thin film magnetic head, or a photomask used in an exposure apparatus, in addition to a semiconductor wafer for semiconductor element manufacturing. The original version of the reticle (synthetic quartz, germanium wafer).

As an exposure device, in addition to being applicable to the reticle (mask) R and the wafer W, the pattern of the reticle R is exposed once in a stationary state, and the wafer W is sequentially stepped and moved. In addition to the projection exposure device (stepper) of the (step & repeat) method, it can also be applied to a step scan in which the reticle R is moved in synchronization with the wafer W to scan and expose the pattern of the reticle R. & scan) scanning exposure device (scan stepper). Further, the exposure apparatus can also be applied to a step & stitch type exposure apparatus in which at least two patterns are partially overlapped and transferred on the wafer W, and the wafer W is sequentially moved.

Further, the present invention is also applicable to an exposure apparatus having a dual stage type in which a plurality of wafer stages are provided. The structure and the exposure operation of the double-stage type exposure apparatus are disclosed, for example, in Japanese Laid-Open Patent Publication No. Hei 10-163099 and No. Hei 10-214783 (corresponding to U.S. Patent Nos. 6,341,007, 6,400,441, 6,549,269 and 6,590,634), and the special specification No. 2000-505958 ( Corresponding to U.S. Patent 5,969,441) or U.S. Patent 6,208,407. Furthermore, the present invention can also be applied to a stage device disclosed in the pamphlet of International Publication No. 2005/122242.

Further, the present invention is also applicable to a substrate stage (as disclosed in Japanese Laid-Open Patent Publication No. H11-135400 (corresponding to International Publication No. 1999/23692), No. 2000-164504 (corresponding to US Pat. No. 6,897,963). An exposure apparatus for holding the substrate) and the measurement stage (loading the reference member on which the reference mark is formed, and/or various optical sensors).

The type of the exposure apparatus is not limited to an exposure apparatus for manufacturing a semiconductor element in which a semiconductor element pattern is exposed to a substrate, and can be widely applied to an exposure apparatus for manufacturing a liquid crystal display element or a plasma display, and the like. A thin film magnetic head, a photographic element (CCD), a micromachine, a MEMS, a DNA wafer, or an exposure device for manufacturing a reticle or a photomask. In addition, it can also be applied to a projection exposure apparatus using an extreme ultraviolet light (EUV light) having a wavelength of about nm to 100 nm as an exposure light source.

Further, in the above-described embodiment, a light-transmitting type mask in which a predetermined light-reducing pattern (or a phase pattern or a light-reducing pattern) is formed on a light-transmitting substrate is used, but instead of the mask, for example, the United States may be used. An electronic reticle (including a variable-shaping reticle, such as a non-illuminating type) that forms a transmissive pattern or a reflective pattern or an illuminating pattern according to an electronic material to be formed on a substrate on an exposure target substrate, as disclosed in Japanese Patent No. 6,778,257 A DMD (Digital Micro-mirror Device) such as a video display element (spatial light modulator).

Moreover, the present invention is also applicable to an exposure apparatus (lithography) which exposes a line & space pattern on a substrate by forming interference fringes on a substrate as disclosed in, for example, International Publication No. 2001/035168. system).

Further, the present invention is also applicable to, for example, a pattern of two masks synthesized on a substrate by a projection optical system as disclosed in Japanese Patent Publication No. 2004-519850 (corresponding to U.S. Patent No. 6,611,316), on a substrate by scanning exposure. One of the exposure areas is a double exposure exposure device at the same time.

The exposure apparatus of the present embodiment is manufactured by assembling various sub-systems (including the respective constituent elements listed in the scope of application of the present application) so as to maintain predetermined mechanical precision, electrical precision, and optical precision. In order to ensure these various precisions, various optical systems are used to adjust the optical precision before and after assembly, to adjust the mechanical precision for various mechanical systems, and to achieve electrical accuracy for various electrical systems. Adjustment. The assembly process from the various subsystems to the exposure device includes mechanical connection, wiring connection of the circuit, and piping connection of the pneumatic circuit. Of course, before the assembly process of various subsystems to the exposure device, there are individual assembly processes for each system. After the assembly process of various subsystems to the exposure device is completed, comprehensive adjustment is performed to ensure various precisions of the entire exposure device. Further, the exposure apparatus is preferably manufactured in a clean room in which temperature and cleanliness are managed.

The micro-component of the semiconductor element, as shown in FIG. 11, is a step 201 of performing a function and performance design of the micro-element, a step 202 of fabricating a photomask (reticle) according to the design step, and manufacturing a substrate constituting the element substrate. Step 203 is manufactured by exposing the mask pattern to the exposure processing step 204 of the substrate, the component assembly step (including the cutting step, the bonding step, the packaging step) 205, the inspection step 206, and the like by the exposure apparatus of the above embodiment.

The stage device can monitor the deformation of the platform, the table, and/or the moving mirror itself at any time. Therefore, it is not necessary to measure the surface shape (concavity and convexity) of the moving mirror for each batch (tens of sheets). Therefore, productivity can be improved without interrupting the transfer exposure. In addition, on the way of a batch, when the stage is subject to large deformation, the positional accuracy thereafter will move the stage in a bad state, but since the strain data is monitored at any time, such a problem does not occur.

1. . . Laser source

2. . . Homogenization optical system

3. . . Beam splitter

4. . . Variable dimmer

5. . . Reflector

6. . . Relay lens system

7. . . Marker blind

8. . . Imaging lens system

9. . . Lighting optical system

10. . . Laser interferometer system for reticle

13. . . Drive System

14. . . Stage control unit

20. . . Main control system

twenty one. . . Marking line alignment system

twenty two. . . Alignment system

23A. . . Auto focus sensor

30. . . Focus detection system

31. . . platform

31a. . . Guide surface

33X. . . X-axis guide

42. . . Block room

45. . . Strain gage

46. . . Power receiving department

47. . . Transceiver

48. . . Power supply department

49. . . Fixed side transceiver

55. . . Z leveling mechanism

90. . . Power supply department

92. . . Computing unit (correction unit)

94. . . Control department

96. . . Wheatstone bridge circuit

AX. . . Optical axis

FL. . . ground

IL. . . Illumination light

MR. . . Memory

Mr. . . Moving mirror

Ox. . . Benchmark

PL. . . Projection optical system

R. . . Marker

RST. . . Marking line stage

RY. . . Baseline

SY. . . interval

WST. . . Wafer stage

WTB. . . Wafer table

Fig. 1 is a view showing a schematic configuration of an exposure apparatus according to an embodiment.

Fig. 2 is a perspective view showing a wafer stage WST system of an exposure apparatus.

Figure 3 is a rear view of a wafer table with a strain gauge attached.

Figure 4 is a block diagram of an electrical system located on a wafer table.

Fig. 5 is a plan view of the wafer table viewed from above.

Fig. 6 is a view showing a method of measuring the surface shape (concavity and convexity, inclination) of the reflecting surface.

Fig. 7 is a view showing a method of measuring the surface shape (concavity and convexity, inclination) of another reflecting surface.

Fig. 8 is a view showing the calculation of the surface shape of the reflecting surface.

Fig. 9 is a view showing a method of calculating deformation data.

Fig. 10 is a flow chart for calculating the surface shape and deformation data of the reflecting surface.

Fig. 11 is a flow chart showing an example of a process of manufacturing a semiconductor element.

42. . . Block room

45. . . Strain gage

46. . . Power receiving department

47. . . Signal transceiver

53XA, 53XB. . . Actuator

53YA, 53YB. . . Actuator

WTB. . . Wafer table

Claims (23)

An exposure apparatus for forming a predetermined pattern on a substrate, comprising: an optical member, which is an exposure light; a susceptor having a guiding surface; a substrate stage holding the substrate and non-contacting the guiding surface along the guiding surface The guiding surface moves relative to the optical member; the position information detecting device obtains information about the position of the substrate table during movement of the substrate table; and the shape information detecting device is disposed on the holding surface of the substrate holding the substrate a back side for determining information about the shape of the substrate stage; and a power transmission device for transmitting power to the shape information detecting device in a non-contact manner, and from the shape information detecting device in the movement of the substrate table Receiving information about the shape in a non-contact manner; and a control device connected to the position information detecting device and the power transmitting device, using the substrate table sent from the position information detecting device when the substrate table moves Information of the position and information about the shape of the substrate table sent from the shape information detecting device when the substrate table moves This position of the braking signal to drive the substrate stage of the substrate stage. The exposure apparatus of claim 1, wherein the substrate is illuminated by the exposure light by a liquid that passes through a space between the substrate and the optical member. The exposure apparatus of claim 2, wherein the information on the shape of the substrate stage is a deformation of the substrate stage due to the weight of the liquid. A component manufacturing method is an exposure process for projecting a predetermined pattern formed on a reticle onto a substrate, comprising: an operation of supporting the substrate by a substrate stage; and supporting the substrate stage on the guiding surface in a non-contact manner And moving the movement along the guiding surface; in the movement of the substrate table, the position information detecting means obtains information about the position of the substrate table; and in the movement of the substrate table, The operation of the detection unit on the back side of the holding surface of the substrate, the information on the shape of the substrate stage, the operation of supplying power to the detection unit in a non-contact manner, and the shape of the substrate table The information is transmitted from the detecting unit to the control device in a non-contact manner; the information about the position of the substrate table sent from the position information detecting device when the substrate table moves is used, and when the substrate table moves And generating, by the shape information detecting device, the information about the shape of the substrate table, generating a signal for controlling the position of the substrate table to drive the substrate table; and the substrate The synchronous movement of reticle movement; and an act of the light from the optical member irradiated with the exposure operation of the substrate. The method of manufacturing a device according to the fourth aspect of the invention, further comprising an operation of supporting a substrate that is illuminated by the liquid member through the liquid substrate and supplying a liquid to a space between the optical member. The method of manufacturing a component according to claim 5, wherein the information about the shape of the substrate is caused by the weight of the liquid The deformation of the substrate table is formed. An exposure apparatus for exposing an energy beam to a substrate through a projection optical system to expose the substrate, comprising: a substrate stage that moves relative to the projection optical system while holding the substrate; and a position information detecting device having The first portion of the substrate stage and the second portion movable relative to the first portion, information about the position of the substrate stage is obtained by the cooperation of the first portion and the second portion; the shape detecting device is provided at The substrate table holds the back side of the holding surface of the substrate for obtaining information about the shape of the substrate stage or the first portion; and the conveying device is for moving the substrate table to the shape detecting device Transmitting power in a non-contact manner; and driving the device to communicate with the position information detecting device and the transmitting device, and obtaining information about the position of the substrate table by the position information detecting device when the substrate table moves When the substrate table moves, the substrate table is driven by the information about the shape of the substrate table obtained by the shape information detecting device. The exposure apparatus of claim 7, wherein the shape detecting device transmits the obtained information about the shape in a non-contact method; and the transmitting device receives the non-contact method during the movement of the substrate table The information about the shape is obtained by the shape detecting device. An exposure apparatus according to item 8 of the patent application, wherein the second The portion has a third portion and a fourth portion that supports the third portion, and an optical path for measuring light for obtaining information about the position is formed between the first portion and the third portion. The exposure apparatus of claim 9, wherein the fourth portion has a guiding surface disposed to move the substrate table. The exposure apparatus of claim 9, wherein the information on the shape is composed of information on a shape of the surface of the first portion that is irradiated with the light. The exposure apparatus of claim 7, which has a second substrate stage which is movable independently of the substrate stage while the substrate is loaded. The exposure apparatus of claim 7, wherein a liquid is supplied to a space between the substrate and the projection optical system; and the substrate is exposed through the projection optical system and the energy beam of the liquid. A component assembly method having a lithography process for using an exposure device of claim 7 in a substrate transfer element pattern in the lithography process. An exposure method of irradiating an energy beam through a projection optical system to expose a substrate, and having an operation of moving the substrate stage relative to the projection optical system while the substrate is mounted on the substrate stage; The position information detecting device that operates the first portion of the substrate stage and the second portion that is movable relative to the first portion, and the first portion and the second portion cooperate to obtain information on the position of the substrate table In the movement of the substrate stage, the shape detecting device provided on the back surface side of the holding surface of the substrate holding the substrate is used to obtain information on the shape of the substrate stage or the first portion; The shape detecting device transmits the power in a non-contact manner; and the control device connected to the position information detecting device and the transmitting device, and the device for transmitting the substrate from the position information detecting device when the substrate table moves The information of the position and the information about the shape of the substrate table sent from the shape information detecting device when the substrate table moves, generates a signal for controlling the position of the substrate table to drive the substrate table. The exposure method of claim 15, wherein the information about the shape obtained by the shape detecting device is transmitted in a non-contact manner. The exposure method of claim 16, wherein the second portion has a third portion and a fourth portion supporting the third portion, and a useful portion is formed between the first portion and the third portion to determine The information of this location is measured by the light path. The exposure method of claim 17, wherein the fourth portion has a guiding surface disposed to move the substrate table. The exposure method of claim 17, wherein the information on the shape is composed of information on a shape of the surface of the first portion that is irradiated with the light. For example, the exposure method of claim 15 of the patent scope further The information about the position of the substrate table obtained by the position information detecting device and the information about the shape of the substrate table obtained by the shape information detecting device drive the substrate table. The exposure method of claim 15, further comprising an operation of moving the substrate by using a second substrate stage movable independently of the substrate stage. The exposure method of claim 15, wherein a liquid is supplied to a space between the substrate and the projection optical system; and the substrate is exposed through the projection optical system and an energy beam of the liquid. A component assembly method having a lithography process, wherein the lithography process uses the exposure method of the fifteenth item of the patent application to the substrate transfer element pattern.