JPH11260791A - Drying method of semiconductor wafer and drying equipment - Google Patents

Drying method of semiconductor wafer and drying equipment

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Publication number
JPH11260791A
JPH11260791A JP5821498A JP5821498A JPH11260791A JP H11260791 A JPH11260791 A JP H11260791A JP 5821498 A JP5821498 A JP 5821498A JP 5821498 A JP5821498 A JP 5821498A JP H11260791 A JPH11260791 A JP H11260791A
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Japan
Prior art keywords
gas
semiconductor wafer
drying
nitrogen
oxygen
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Pending
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JP5821498A
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Japanese (ja)
Inventor
Yutaka Asanome
Mikiyoshi Miyauchi
幹由 宮内
裕 浅野目
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Toshiba Mach Co Ltd
東芝機械株式会社
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Priority to JP5821498A priority Critical patent/JPH11260791A/en
Publication of JPH11260791A publication Critical patent/JPH11260791A/en
Application status is Pending legal-status Critical

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Abstract

PROBLEM TO BE SOLVED: To provide a drying method of a semiconductor water which is able to dry pure water adhering on a semiconductor wafer, after cleaning in a short time with small space and at low cost.
SOLUTION: A gas separating film 4 composed of polymer, through which vapor penetrates very easily and a gas such as oxygen and nitrogen hardly penetrates is arranged around a semiconductor wafer 6. Gas G for drying such as oxygen and nitrogen is introduced into a gap 10 between the semiconductor wafer 6 and the gas separating film 4 composed of polymer, wafer content stuck on the semiconductor wafer 6 is vaporized, and steam is separated by the gas separating film 4 of a polymer and then dried.
COPYRIGHT: (C)1999,JPO

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は、洗浄後に半導体ウエハ上に付着している純水を乾燥させるための半導体ウエハの乾燥方法および乾燥装置に関する。 The present invention relates to relates to drying methods and drying apparatus of the semiconductor wafer for drying the pure water adhering onto the semiconductor wafer after cleaning.

【0002】 [0002]

【従来の技術】近年、半導体部品の需要が多く、また、 In recent years, many demand for semiconductor parts, also,
その種類も多種類に及んでいる。 The type also extends to many types. 半導体部品は、多種の工程を経て製造されるが、その製造工程において、通常、各工程毎に、その基板である半導体ウエハに付着した汚染物を除去し、清浄な状態で次の工程に送り込むようにしている。 Semiconductor component is manufactured through a variety of steps, in the manufacturing process, usually, in each step, to remove the contaminants adhering to a semiconductor wafer which is a substrate is fed into the next process in a clean state It is way.

【0003】すなわち、各工程毎に、半導体ウエハに付着した汚染物を洗浄し、この洗浄終了後に洗浄液を純水でリンスし、さらに、この後、半導体ウエハ上に付着している純水を乾燥するようにしている。 [0003] That is, for each step, washing the contaminants adhered to the semiconductor wafer, to rinse the cleaning solution after the completion of cleaning with pure water, even after this, drying the pure water adhering onto the semiconductor wafer It is way.

【0004】このように、半導体製造工程において、半導体ウエハの乾燥工程の回数は多く、処理時間、スペース、コストに占める要因は非常に大きいものとなっている。 [0004] Thus, in the semiconductor manufacturing process, the number of drying of the semiconductor wafer is large, processing time, space, factors accounted for the cost has become very large. このため、この種の乾燥装置として、短時間で乾燥でき、しかも、省スペース、低コストの装置が求められている。 Therefore, this type of drying apparatus can be dried in a short time, moreover, space saving, low cost of the apparatus is required.

【0005】一方、従来において半導体製造に使用される乾燥装置として、半導体ウエハを高速回転させてその遠心力を利用するスピン乾燥機、さらに、このスピン乾燥機の効率を向上させるため減圧、熱等を組合わせた改良型スピン乾燥機が用いられている。 On the other hand, as a drying device used in semiconductor manufacturing in the past, a spin dryer to utilize the centrifugal force of the semiconductor wafer is rotated at high speed, and further, vacuum to improve the efficiency of the spin-dryer, heat, etc. was combined improved spin dryer is used.

【0006】しかし、乾燥効率を向上させべく改良された改良型スピン乾燥機にあっても、半導体ウエハが大口径化する等その製造条件の変化により、乾燥時間において前記要求を満足できなくなっているのが現状である。 However, even in improved improved spin dryer to improve the drying efficiency, the semiconductor wafer by the change of equal manufacturing conditions for large diameter, is no longer able to satisfy the requirements in the drying time is the current situation.

【0007】また、ウエハを回転自在に支持するための回転支持機構や駆動源等を必要とするため、必然的に装置が大型化し、かつ機構が複雑になり、省スペース、低コストの前記要求を満足できないばかりでなく、ウエハエッヂ部が高速回転中に振動することによりチッピングが発生したりするなどの問題がある。 Further, since it requires a rotation support mechanism and the drive source or the like for rotatably supporting the wafer inevitably apparatus becomes large in size, and mechanism becomes complicated, space saving, low cost the demand for not only can not be satisfied, there is a problem, such as chipping or generated by the wafer edge portion is vibration during high-speed rotation.

【0008】 [0008]

【発明が解決しようとする課題】上述のように、従来の半導体ウエハの乾燥方法および装置は、特に乾燥時間、 [SUMMARY OF THE INVENTION] As described above, the drying method and apparatus of a conventional semiconductor wafer, in particular the drying time,
省スペース、低コスト化等において最近の要求を満すことができなくなっており、これを解決し得る半導体ウエハの乾燥方法および装置の提供が臨まれているのが現状である。 Space, at present, no longer have a recent demand that Mitsurusu in cost reduction, etc., provided in the semiconductor wafer drying method and apparatus capable of solving this is desired.

【0009】本発明は、上記事情に基づきなされたもので、その目的とするところは、洗浄後に半導体ウエハ上に付着している純水を、短時間、省スペース、低コストで乾燥することができる半導体ウエハの乾燥方法および装置を提供しようとするものである。 [0009] The present invention has been made based on the above circumstances, it is an object of the pure water adhering to the semiconductor wafer after cleaning, briefly, space saving, be dried at a low cost it is intended to provide a drying method and apparatus for a semiconductor wafer.

【0010】 [0010]

【課題を解決するための手段】本発明は、上記目的を達成するための第1の手段として、水蒸気を極めて透過し易く、酸素、窒素等のガスを透過し難い高分子製ガス分離膜を半導体ウエハの周囲に配置し、前記半導体ウエハと前記高分子製ガス分離膜との隙間に前記酸素、窒素等のガスを導入して、前記半導体ウエハに付着している水分を蒸気化し、前記高分子製ガス分離膜で水蒸気を分離して乾燥させるようにしたものである。 Means for Solving the Problems The present invention provides, as a first means for achieving the above object, likely very permeable water vapor, oxygen, transparent hard polymer made of gas separation membrane gas such as nitrogen arranged around the semiconductor wafer, the oxygen, by introducing gas such as nitrogen into the gap between the semiconductor wafer and the polymer made gas separation membranes, moisture adhered to the semiconductor wafer vaporized, the high it is obtained so as to dry by separating water vapor molecules made gas separation membrane.

【0011】これにより、従来の遠心力を利用するスピン乾燥方法のものに比べて数十分の1と大幅な乾燥時間の短縮が図れ、しいては半導体製造効率を大幅に向上できる。 [0011] Thus, Hakare shorten the few tenths of a substantial drying time compared to that of a spin drying method utilizing a conventional centrifugal force, by force can greatly improve the semiconductor production efficiency. また、半導体ウエハの回転支持機構や駆動源等を必要としないため、装置の小型化と機構の簡素化が図れ、省スペース、低コストが図れ、また、ウエハエッヂ部が高速回転中に振動することによりチッピングが発生したりすることもなく安定した製品品質の維持が可能となる半導体ウエハの乾燥方法を提供できる。 Moreover, since it does not require the rotation support mechanism and a driving source such as a semiconductor wafer, downsizing and simplification of the mechanism of the device, space saving, Hakare low cost, also the wafer edge portion vibrates during high-speed rotation can provide a method for drying a semiconductor wafer maintenance of stable product quality without even chipping or generated becomes possible by.

【0012】また、第2の手段として、第1の手段における半導体ウエハと高分子製ガス分離膜との隙間に導入する酸素、窒素等のガスを、別に設けた高分子製ガス分離膜によって予備乾燥した圧縮ガスとしたものである。 [0012] As a second means, the oxygen to be introduced into the gap between the semiconductor wafer and a polymer manufactured by the gas separation membrane of the first means, a gas such as nitrogen, preliminary by separately provided polymer manufactured gas separation membrane it is obtained by a dry compressed gas.

【0013】これにより、半導体ウエハ表面の水分をより速く水蒸気化し、高分子製ガス分離膜でより速く水蒸気を分離できる。 [0013] Thus, faster water vapor the moisture of the semiconductor wafer surface can be separated faster water vapor by a polymer made gas separation membrane. さらに、前記圧縮ガスを、半導体ウエハと高分子製ガス分離膜との間に導入する直前に予備乾燥することにより半導体ウエハ表面の水分をより効率良く分離して乾燥することが可能となる。 Furthermore, the compressed gas, it is possible to dry more efficiently separating water semiconductor wafer surface by pre-drying just prior to introduction between the semiconductor wafer and a polymer manufactured by the gas separation membrane.

【0014】また、上記目的を達成するための第3の手段として、被乾燥部材である半導体ウエハを支持するウエハ保持部材を有し、かつ、水蒸気を極めて透過し易く、酸素、窒素等のガスを透過し難い性質を有する高分子製ガス分離膜を、前記半導体ウエハとの間に隙間を存する状態で配置してなる乾燥室と、この乾燥室内の前記半導体ウエハと前記高分子製ガス分離膜との隙間に前記酸素、窒素等のガスを導入するガス供給手段とを具備し、前記酸素、窒素等のガスにより、前記半導体ウエハに付着している水分を蒸気化すると共に前記高分子製ガス分離膜で水蒸気を分離して乾燥させるようにしたものである。 Further, as a third means for achieving the above object, a wafer holding member for supporting a semiconductor wafer as an object to be dried member and easily very permeable water vapor, oxygen, etc. of the nitrogen gas the polymer manufactured gas separation membrane having a permeation hardly nature, said a drying chamber formed by arranging in a state exists a gap between the semiconductor wafer, the semiconductor wafer and the polymer made gas separation membrane of this drying chamber said oxygen, comprising a gas supply means for introducing a gas such as nitrogen, the oxygen, the gas such as nitrogen, the polymer made gas with moisture adhered to the semiconductor wafer to steam into the gap between the it is obtained so as to dry by separating water vapor in the separation membrane.

【0015】これにより、従来の遠心力を利用するスピン乾燥装置のものに比べて数十分の1と大幅な乾燥時間の短縮が図れ、しいては半導体製造効率を大幅に向上できる。 [0015] Thus, a few tenths as compared with the spin drying apparatus utilizing conventional centrifugal force Hakare shortening significant drying times, by force can greatly improve the semiconductor production efficiency. また、半導体ウエハの回転支持機構や駆動源等を必要としないため、装置の小型化と機構の簡素化が図れ、省スペース、低コストが図れる。 Moreover, since it does not require the rotation support mechanism and a driving source such as a semiconductor wafer, downsizing and simplification of the mechanism of the device, space saving, low cost reduced. また、ウエハエッヂ部が高速回転中に振動することによりチッピングが発生したりすることもなく安定した製品品質の維持が可能となる半導体ウエハの乾燥装置を提供できる。 Further, it is possible to provide a drying apparatus of a semiconductor wafer that wafer edge portion becomes possible to maintain the product quality chipping even without stable or to occur by vibration during high-speed rotation.

【0016】また、第4の手段として、前記第3の手段のガス供給手段を、前記酸素、窒素等のガスを圧縮して供給する圧縮ガス供給装置と、この圧縮ガス供給装置により供給される前記酸素、窒素等のガスを、水蒸気を極めて透過し易く、酸素、窒素等のガスを透過し難い性質を有する高分子製ガス分離膜によって予備乾燥する予備乾燥装置と、この予備乾燥装置により予備乾燥した圧縮ガスを前記半導体ウエハと前記高分子製ガス分離膜との隙間に導くガス導入装置とを具備してなる構成としたものである。 Further, as a fourth means, the gas supply means of said third means, said oxygen, and a compressed gas supply apparatus for supplying and compressed gas such as nitrogen, is supplied by the compressed gas supply device said oxygen, a gas such as nitrogen, easily very permeable water vapor, oxygen, and pre-drying device predrying by a polymer made gas separation membrane having a permeation hardly nature a gas such as nitrogen, preliminary this preliminary drying device the dried compressed gas is obtained by the equipped with comprising constituting a gas introduction device for guiding in the gap between the polymer made gas separation membrane and the semiconductor wafer.

【0017】このように、酸素、窒素等のガスを、圧縮ガス供給装置によって圧縮ガスとして供給するようにしたから、半導体ウエハ表面の水分をより速く水蒸気化し、高分子製ガス分離膜でより速く水蒸気を分離できる。 [0017] Thus, the oxygen, the gas such as nitrogen, it is so arranged to supply a compressed gas by the compressed gas supply device, and faster water vapor the moisture of the semiconductor wafer surface, faster in the polymer made gas separation membrane water vapor can be separated. さらに、前記圧縮ガスを、予備乾燥装置によって半導体ウエハと高分子製ガス分離膜との間に導入する直前に予備乾燥するようにしたから半導体ウエハ表面の水分をより効率良く分離して乾燥することが可能となる。 Furthermore, the compressed gas, to dry more efficiently separating water semiconductor wafer surface it is so arranged that pre-drying just prior to introduction between the semiconductor wafer and a polymer manufactured by the gas separation membrane by a preliminary drying device it is possible.

【0018】 [0018]

【発明の実施の形態】以下、本発明の実施の形態の一例について図1を参照して説明する。 BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, an example embodiment of the present invention will be described with reference to FIG. 図1は本発明の乾燥方法を実施するための半導体ウエハの乾燥装置を概略的に示すもので、この乾燥装置1は、大別して乾燥装置本体部2と、この乾燥装置本体部2に乾燥用ガスGを導入するガス供給手段としてのガス供給装置部3とからなる。 Figure 1 is a drying apparatus for semiconductor wafers for performing the drying process of the present invention shows schematically, the drying apparatus 1 comprises a drying apparatus main body 2 roughly comprises a dry to the drying apparatus main body 2 It consists gas feeder unit 3 serving as a gas supply means for introducing a gas G.

【0019】乾燥装置本体部2は、次のような構成となっている。 The drying apparatus main body 2 has the following configuration. すなわち、乾燥装置本体部2は、水蒸気を極めて透過し易く、酸素、窒素等のガスを透過し難い性質を有する高分子製ガス分離膜4で形成されたチャンバ5 In other words, the drying apparatus body 2, it is easy to very permeable water vapor, oxygen, chamber 5 formed by the polymer made gas permeable membrane 4 with a transparent hard nature of the gas such as nitrogen
を有し、チャンバ5内に洗浄後の被乾燥部材である半導体ウエハ6を収容する乾燥室7を形成した状態となっている。 The a in a state of forming the drying chamber 7 for accommodating the semiconductor wafer 6 as an object to be dried member after cleaning the chamber 5.

【0020】乾燥室7内には、ベース8上に配設された複数のウエハ保持部材9の保持部分が臨んでおり、半導体ウエハ6の表裏両面と前記高分子製ガス分離膜4との間に、乾燥用ガスGが流れ得る十分な隙間10を存する状態で半導体ウエハ6を保持するようになっている上記チャンバ5を形成する高分子製ガス分離膜4は、宇部興産(株)製の高分子製中空糸膜からなり、ステンレス製の容器11で保持されている。 [0020] The drying chamber 7, which faces the holding portion of the plurality of wafer holding member 9 disposed on the base 8, between the front and back surfaces of the semiconductor wafer 6 and the polymer made gas permeable membrane 4 , the polymer made gas permeable membrane 4 to form the chamber 5 which is adapted to hold a semiconductor wafer 6 in a state in which exists a sufficient clearance 10 for the drying gas G can flow, Ube Industries Co., Ltd. , a polymer hollow fiber membranes are held in a stainless steel container 11.

【0021】この容器11は詳細に図示しないが、上部材と下部材とからなり、上下方向に2分割可能となっており、前記乾燥室7に半導体ウエハ6を出し入れできるようになっている。 [0021] While the container 11 is not shown in detail, consist of an upper and lower members, the vertical direction is made possible divided into, so that the possible out the semiconductor wafer 6 to the drying chamber 7. また、容器11の一側部には、高分子製ガス分離膜4の相互対向面間に形成された前記乾燥室7に連通する状態にガス導入口12が、また、これとは反対側に前記乾燥室7を通過した乾燥用ガスGを外部に導出するガス導出口13が形成された状態となっている。 Further, the one side of the container 11, the gas inlet port 12 to a state that communicates with the drying chamber 7 formed therebetween opposing surfaces of the polymer made gas permeable membrane 4 is, also, on the opposite side to this in a state of gas outlet 13 for deriving the dry gas G that has passed through the drying chamber 7 to the outside is formed.

【0022】一方、乾燥室7内に乾燥用ガスGを導入するガス供給手段としてのガス供給装置部3は、次のような構成となっている。 On the other hand, the gas supply device 3 as a gas supply means for introducing a drying gas G into the drying chamber 7 has a following configuration. すなわち、ガス供給装置部3は、 That is, the gas supply device portion 3,
前記乾燥用ガスGである酸素、窒素等のガス圧縮して供給する圧縮ガス供給装置20を有する。 With the drying gas G is oxygen, compressed gas supply device 20 supplies the gas compression such as nitrogen. この実施形態では前記乾燥用ガスGとして圧縮空気を使用するものであり、その圧縮ガス供給装置20として吐出圧調整機能付きの空気圧縮機やブロアー等が使用される。 In this embodiment is intended to use compressed air as the drying gas G, the discharge pressure adjusting function of the air compressor or blower or the like is used as the compressed gas supply apparatus 20.

【0023】さらに、この圧縮ガス供給装置20のガス供給方向下流側には、乾燥室7内に導入される直前において、前記圧縮ガス(圧縮空気)からなる乾燥用ガスG Furthermore, in the gas supply direction downstream side of the compressed gas supply device 20, immediately before being introduced into the drying chamber 7, the drying gas G consisting of the compressed gas (compressed air)
を、予備乾燥する予備乾燥装置21が設けられている。 The predrying apparatus 21 predrying is provided.
この予備乾燥装置21は、水蒸気を極めて透過し易く、 The preliminary drying device 21, it is easy to very permeable water vapor,
酸素、窒素等のガスを透過し難い性質を有する前述した高分子製ガス分離膜4を用いたドライヤー22で構成される。 Oxygen, and a polymer made gas permeable membrane 4 dryer 22 using the previously described having a transparent hard nature of the gas such as nitrogen.

【0024】また、予備乾燥装置21としてのドライヤー22のガス導出端側は、配管23からなるガス導入装置24を介して前記ガス導入口12に接続されており、 Further, gas outlet end of the dryer 22 as a preliminary drying device 21 is connected to the gas inlet port 12 through the gas introduction device 24 made of a pipe 23,
予備乾燥した圧縮ガスからなる乾燥用ガスGを前記半導体ウエハ6と前記高分子製ガス分離膜4との隙間10に導くようになっている。 It is supposed to be guided to the drying gas G of compressed gas pre-dried in the gap 10 between the polymer made gas permeable membrane 4 and the semiconductor wafer 6.

【0025】次に、このように構成された乾燥装置1の作用について説明する。 Next, description thus the operation of the configured drying apparatus 1. 洗浄後の半導体ウエハ6を、ベース8上に配設されたウエハ保持部材9で保持することで、水蒸気を極めて透過し易く、酸素、窒素等のガスを透過し難い高分子製ガス分離膜4で形成されたチャンバ5内、すなわち、乾燥室7に収納する。 The semiconductor wafer 6 after cleaning, by holding the wafer holding member 9 disposed on the base 8, easily very permeable water vapor, oxygen, nitrogen gas is transmitted through the hard polymer made gas separation, such as membrane 4 in the formed chamber within 5, i.e., housed in the drying chamber 7.

【0026】この後、乾燥室7にガス供給装置部3から乾燥用のガスGが導入される。 [0026] After this, the gas G for dry from the gas supply unit 3 is introduced into the drying chamber 7. この乾燥用のガスGは、 Gas G of drying is
予備乾燥装置21としてのドライヤー22により乾燥された圧縮空気であり、半導体ウエハ6の表裏(上下面) A compressed air dried by the dryer 22 as the pre-drying device 21, the front and back of the semiconductor wafer 6 (upper and lower surfaces)
と高分子製ガス分離膜4との隙間10を通過中に、半導体ウエハ6の表面に付着している水分を蒸気化させ、圧縮空気からなる乾燥用ガスGの圧力により水蒸気(H 2 And while passing through the gap 10 between the polymer made gas permeable membrane 4, the water adhering to the surface of the semiconductor wafer 6 is vaporized, water vapor by the pressure of the drying gas G of compressed air (H 2
O)が高分子製ガス分離膜4を透過し、分離される。 O) is transmitted through the polymer made gas permeable membrane 4, it is separated. また、乾燥用ガスGはガス導出口13より放出される。 The drying gas G is discharged from the gas outlet 13.

【0027】なお、高分子製ガス分離膜4により分離された水蒸気(H 2 O)は、高分子製ガス分離膜4を保持するステンレス製の容器11に形成された図示しない透孔から外部に放出される。 It should be noted, water vapor separated by the polymer made gas permeable membrane 4 (H 2 O) is the outside from the through hole (not shown) formed in a stainless steel container 11 for holding the polymer made gas permeable membrane 4 It is released.

【0028】本発明の乾燥装置1により、洗浄後、純水でリンスした8インチの半導体ウエハ6を圧縮空気0. [0028] The drying apparatus 1 of the present invention, after washing, compressed air semiconductor wafer 6 8-inch substrate was rinsed with pure water 0.
5MPa、流量15NI/Minの条件で1min 乾燥した結果、半導体ウエハ6は完全に乾燥された。 5 MPa, 1min dry results under the conditions of a flow rate 15Ni / Min, a semiconductor wafer 6 was completely dry.

【0029】このように、半導体ウエハ6の乾燥時間は、従来のスピン乾燥機の1/20と大幅な乾燥時間の短縮が図れ、しいては半導体製造効率を大幅に向上できる。 [0029] Thus, the drying time of the semiconductor wafer 6, 1/20 of the conventional spin dryer Hakare shortening significant drying times, by force can greatly improve the semiconductor production efficiency. また、本発明の乾燥方法および装置は、半導体ウエハ6の回転支持機構や駆動源等を必要としないため、装置の小型化と機構の簡素化が図れ、省スペース、低コストが図れる。 The drying method and apparatus of the present invention does not require a rotation support mechanism and a driving source such as a semiconductor wafer 6, downsizing and simplification of the mechanism of the device, space saving, low cost reduced. また、ウエハエッヂ部が高速回転中に振動することによりチッピングが発生したりすることもなく安定した製品品質の維持が可能となった。 Further, it became possible to maintain the wafer edge portion of product quality chipping even without stable or to occur by vibration during high-speed rotation. なお、本発明は上記実施の形態に限らず、本発明の要旨を変えない範囲で種々変形実施可能なことは勿論である。 The present invention is not limited to the foregoing embodiments, it can be variously modified embodiments within the scope not changing the gist of the present invention.

【0030】 [0030]

【発明の効果】以上述べたように本発明によれば、次のような効果を奏する。 According to the present invention as described above, according to the present invention, the following effects. 請求項1の乾燥方法によれば、水蒸気を極めて透過し易く、酸素、窒素等のガスを透過し難い高分子製ガス分離膜を半導体ウエハの周囲に配置し、前記半導体ウエハと前記高分子製ガス分離膜との隙間に前記酸素、窒素等のガスを導入して、前記半導体ウエハに付着している水分を蒸気化し、前記高分子製ガス分離膜で水蒸気を分離して乾燥させるようにしたものである。 According to the drying method according to claim 1, liable to very permeable water vapor, oxygen, place the transmission hardly polymer manufactured gas separation membrane gas such as nitrogen around the semiconductor wafer, the polymer made with the semiconductor wafer wherein the gap between the gas separation membrane by introducing oxygen, gas such as nitrogen, moisture adhered to the semiconductor wafer vaporized and so drying the separated steam in the polymer made gas separation membrane it is intended. これにより、従来の遠心力を利用するスピン乾燥方法のものに比べて数十分の1と大幅な乾燥時間の短縮が図れ、しいては半導体製造効率を大幅に向上できる。 Thus, Hakare shorten the few tenths of a substantial drying time compared to that of a spin drying method utilizing a conventional centrifugal force, by force can greatly improve the semiconductor production efficiency.
また、半導体ウエハの回転支持機構や駆動源等を必要としないため、装置の小型化と機構の簡素化が図れ、省スペース、低コストが図れ、また、ウエハエッヂ部が高速回転中に振動することによりチッピングが発生したりすることもなく安定した製品品質の維持が可能となる半導体ウエハの乾燥方法を提供できるといった効果を奏する。 Moreover, since it does not require the rotation support mechanism and a driving source such as a semiconductor wafer, downsizing and simplification of the mechanism of the device, space saving, Hakare low cost, also the wafer edge portion vibrates during high-speed rotation an effect such can provide a method for drying a semiconductor wafer maintenance of stable product quality without even chipping or generated becomes possible by.

【0031】また、請求項2の乾燥方法によれば、請求項1の乾燥方法における半導体ウエハと高分子製ガス分離膜との隙間に導入する酸素、窒素等のガスを、別に設けた高分子製ガス分離膜によって予備乾燥した圧縮ガスとしたものである。 Further, according to the drying method according to claim 2, oxygen is introduced into the gap between the semiconductor wafer and a polymer manufactured by the gas separation membrane in the drying method according to claim 1, a gas such as nitrogen, provided separately polymer by manufacturing the gas separation membrane is obtained by a compressed gas pre-dried. これにより、半導体ウエハ表面の水分をより速く水蒸気化し、高分子製ガス分離膜でより速く水蒸気を分離できる。 Thus, faster water vapor the moisture of the semiconductor wafer surface can be separated faster water vapor by a polymer made gas separation membrane. さらに、前記圧縮ガスを、半導体ウエハと高分子製ガス分離膜との間に導入する直前に予備乾燥することにより半導体ウエハ表面の水分をより効率良く分離して乾燥することが可能となる。 Furthermore, the compressed gas, it is possible to dry more efficiently separating water semiconductor wafer surface by pre-drying just prior to introduction between the semiconductor wafer and a polymer manufactured by the gas separation membrane.

【0032】また、請求項3の乾燥装置によれば、被乾燥部材である半導体ウエハを支持するウエハ保持部材を有し、かつ、水蒸気を極めて透過し易く、酸素、窒素等のガスを透過し難い性質を有する高分子製ガス分離膜を、前記半導体ウエハとの間に隙間を存する状態で配置してなる乾燥室と、この乾燥室内の前記半導体ウエハと前記高分子製ガス分離膜との隙間に前記酸素、窒素等のガスを導入するガス供給手段とを具備し、前記酸素、窒素等のガスにより、前記半導体ウエハに付着している水分を蒸気化すると共に前記高分子製ガス分離膜で水蒸気を分離して乾燥させるようにしたものである。 Further, according to the drying apparatus according to claim 3, comprising a wafer holding member for supporting a semiconductor wafer as an object to be dried member and easily very permeable water vapor, oxygen, gas such as nitrogen passes through the polymer manufactured gas separation membrane with a hard nature, the gaps between the drying chamber formed by arranging in a state exists a gap between the drying chamber of the semiconductor wafer and the polymer made gas separation membrane between the semiconductor wafer said oxygen, comprising a gas supply means for introducing a gas such as nitrogen, the oxygen, the gas such as nitrogen, moisture adhered to the semiconductor wafer in the polymer made gas separation membrane as well as vapor into it is obtained so as to dry by separating water vapor. これにより、従来の遠心力を利用するスピン乾燥装置のものに比べて数十分の1と大幅な乾燥時間の短縮が図れ、しいては半導体製造効率を大幅に向上できる。 Thus, a few tenths as compared with the spin drying apparatus utilizing conventional centrifugal force Hakare shortening significant drying times, by force can greatly improve the semiconductor production efficiency. また、半導体ウエハの回転支持機構や駆動源等を必要としないため、装置の小型化と機構の簡素化が図れ、省スペース、低コストが図れる。 Moreover, since it does not require the rotation support mechanism and a driving source such as a semiconductor wafer, downsizing and simplification of the mechanism of the device, space saving, low cost reduced. また、ウエハエッヂ部が高速回転中に振動することによりチッピングが発生したりすることもなく安定した製品品質の維持が可能となる半導体ウエハの乾燥装置を提供できるといった効果を奏する。 Further, an effect such can provide a drying apparatus of a semiconductor wafer that wafer edge portion becomes possible to maintain the product quality chipping even without stable or to occur by vibration during high-speed rotation.

【0033】また、請求項4の乾燥装置によれば、請求項3の乾燥装置におけるガス供給手段を、前記酸素、窒素等のガスを圧縮して供給する圧縮ガス供給装置と、この圧縮ガス供給装置により供給される前記酸素、窒素等のガスを、水蒸気を極めて透過し易く、酸素、窒素等のガスを透過し難い性質を有する高分子製ガス分離膜によって予備乾燥する予備乾燥装置と、この予備乾燥装置により予備乾燥した圧縮ガスを前記半導体ウエハと前記高分子製ガス分離膜との隙間に導くガス導入装置とを具備してなる構成としたものである。 Further, according to the drying apparatus of claim 4, the gas supply means in the drying apparatus according to claim 3, wherein the oxygen, the compressed gas supply device for supplying a gas such as by compressed nitrogen, the compressed gas supply the oxygen supplied by the device, a gas such as nitrogen, and the preliminary drying device predrying facilitate very permeable water vapor, oxygen, by a polymer manufactured by the gas separation membrane having a permeation hardly nature a gas such as nitrogen, this it is obtained by a pre-dried compressed gas formed by and a gas introduction device for guiding in the gap between the polymer made gas separation membrane and the semiconductor wafer constituted by the preliminary drying device. このように、酸素、窒素等のガスを、圧縮ガス供給装置によって圧縮ガスとして供給するようにしたから、半導体ウエハ表面の水分をより速く水蒸気化し、高分子製ガス分離膜でより速く水蒸気を分離できる。 Thus, oxygen gas such as nitrogen, it is so arranged to supply a compressed gas by the compressed gas supply device, and faster water vapor the moisture of the semiconductor wafer surface, separating the faster water vapor by a polymer made gas separation membrane it can. さらに、前記圧縮ガスを、予備乾燥装置によって半導体ウエハと高分子製ガス分離膜との間に導入する直前に予備乾燥するようにしたから半導体ウエハ表面の水分をより効率良く分離して乾燥することが可能となるといった効果を奏する。 Furthermore, the compressed gas, to dry more efficiently separating water semiconductor wafer surface it is so arranged that pre-drying just prior to introduction between the semiconductor wafer and a polymer manufactured by the gas separation membrane by a preliminary drying device an effect such is possible.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の乾燥装置の一例を概略的に示す図。 Diagram schematically showing an example of drying apparatus of the present invention; FIG.

【符号の説明】 DESCRIPTION OF SYMBOLS

1…乾燥装置 2…乾燥装置本体部 G…乾燥用ガス 3…ガス供給装置部(ガス供給手段) 4…高分子製ガス分離膜 5…チャンバ 6…半導体ウエハ 7…乾燥室 8…ベース 9…ウエハ保持部材 10…隙間 11…容器 12…ガス導入口 13…ガス導出口 20…圧縮ガス供給装置 21…予備乾燥装置 22…ドライヤー 23…配管 24…ガス導入装置 1 ... drying apparatus 2 ... drying apparatus main body G ... drying gas 3 ... gas feeder unit (gas supply means) 4 ... polymer manufactured gas separation membrane 5 ... chamber 6 ... semiconductor wafer 7 ... drying chamber 8 ... base 9 ... wafer holding member 10 ... gap 11 ... container 12 ... gas inlet 13 ... gas outlet 20 ... compressed gas supply apparatus 21 ... preliminary drying device 22 ... dryer 23 ... pipe 24 ... gas introducing device

Claims (4)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】水蒸気を極めて透過し易く、酸素、窒素等のガスを透過し難い高分子製ガス分離膜を半導体ウエハの周囲に配置し、 前記半導体ウエハと前記高分子製ガス分離膜との隙間に前記酸素、窒素等のガスを導入して、前記半導体ウエハに付着している水分を蒸気化し、 前記高分子製ガス分離膜で水蒸気を分離して乾燥させることを特徴とする半導体ウエハの乾燥方法。 1. A likely very permeable water vapor, oxygen, such as nitrogen permeation hard polymer made of gas separation membrane gas disposed around the semiconductor wafer, and the semiconductor wafer between the polymer made gas separation membrane introducing the oxygen gas such as nitrogen into the gap, the moisture adhered to the semiconductor wafer vaporized, the semiconductor wafer, characterized in that drying the separated steam in the polymer made gas separation membrane drying method.
  2. 【請求項2】前記酸素、窒素等のガスは、別に設けた高分子製ガス分離膜によって予備乾燥した圧縮ガスであることを特徴とする請求項1に記載の半導体ウエハの乾燥方法。 Wherein said oxygen gas such as nitrogen, drying method of a semiconductor wafer according to claim 1, characterized in that the compressed gas pre-dried by separately provided polymer manufactured gas separation membrane.
  3. 【請求項3】被乾燥部材である半導体ウエハを支持するウエハ保持部材を有し、かつ、水蒸気を極めて透過し易く、酸素、窒素等のガスを透過し難い性質を有する高分子製ガス分離膜を、前記半導体ウエハとの間に隙間を存する状態で配置してなる乾燥室と、 この乾燥室内の前記半導体ウエハと前記高分子製ガス分離膜との隙間に前記酸素、窒素等のガスを導入するガス供給手段と、を具備し、 前記酸素、窒素等のガスにより、前記半導体ウエハに付着している水分を蒸気化すると共に前記高分子製ガス分離膜で水蒸気を分離して乾燥させることを特徴とする半導体ウエハの乾燥装置。 3. has a wafer holding member for supporting a semiconductor wafer as an object to be dried member and easily very permeable water vapor, oxygen, polymer manufactured gas separation membrane having a permeation hardly nature a gas such as nitrogen the introduction a drying chamber formed by arranging in a state exists a gap, the gap to the oxygen of the drying chamber of the semiconductor wafer and the polymer made gas separation membrane, a gas such as nitrogen between the semiconductor wafer comprising a gas supply means for the said oxygen, a gas such as nitrogen, drying the moisture adhering to the semiconductor wafer by separating water vapor in the polymer made gas separation membrane with vaporizing drying device of a semiconductor wafer, characterized.
  4. 【請求項4】前記ガス供給手段は、 前記酸素、窒素等のガスを圧縮して供給する圧縮ガス供給装置と、 この圧縮ガス供給装置により供給される前記酸素、窒素等のガスを、水蒸気を極めて透過し易く、酸素、窒素等のガスを透過し難い性質を有する高分子製ガス分離膜によって予備乾燥する予備乾燥装置と、 この予備乾燥装置により予備乾燥した圧縮ガスを前記半導体ウエハと前記高分子製ガス分離膜との隙間に導くガス導入装置と、を具備してなることを特徴とする請求項3に記載の半導体ウエハの乾燥装置。 Wherein said gas supply means, said oxygen, and a compressed gas supply apparatus for supplying and compressed gas such as nitrogen, the oxygen supplied by the compressed gas supply device, a gas such as nitrogen, water vapor easy to very permeable, oxygen, and pre-drying device predrying by a polymer made gas separation membrane having a permeation hardly nature a gas such as nitrogen, the high compressed gas predried the preliminary drying device and the semiconductor wafer a semiconductor wafer of a drying apparatus according to claim 3, characterized in that comprises a, a gas introduction device for guiding in the gap between molecular manufactured gas separation membrane.
JP5821498A 1998-03-10 1998-03-10 Drying method of semiconductor wafer and drying equipment Pending JPH11260791A (en)

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