JPH11260791A - Drying method of semiconductor wafer and drying equipment - Google Patents
Drying method of semiconductor wafer and drying equipmentInfo
- Publication number
- JPH11260791A JPH11260791A JP5821498A JP5821498A JPH11260791A JP H11260791 A JPH11260791 A JP H11260791A JP 5821498 A JP5821498 A JP 5821498A JP 5821498 A JP5821498 A JP 5821498A JP H11260791 A JPH11260791 A JP H11260791A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- gas
- drying
- separation membrane
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、洗浄後に半導体ウ
エハ上に付着している純水を乾燥させるための半導体ウ
エハの乾燥方法および乾燥装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer drying method and a drying apparatus for drying pure water adhering on a semiconductor wafer after cleaning.
【０００２】[0002]
【従来の技術】近年、半導体部品の需要が多く、また、
その種類も多種類に及んでいる。半導体部品は、多種の
工程を経て製造されるが、その製造工程において、通
常、各工程毎に、その基板である半導体ウエハに付着し
た汚染物を除去し、清浄な状態で次の工程に送り込むよ
うにしている。2. Description of the Related Art In recent years, there has been a great demand for semiconductor components.
There are many types. Semiconductor components are manufactured through various processes. In the manufacturing process, contaminants attached to a semiconductor wafer as a substrate are usually removed at each process, and then sent to the next process in a clean state. Like that.
【０００３】すなわち、各工程毎に、半導体ウエハに付
着した汚染物を洗浄し、この洗浄終了後に洗浄液を純水
でリンスし、さらに、この後、半導体ウエハ上に付着し
ている純水を乾燥するようにしている。That is, in each process, contaminants adhering to the semiconductor wafer are washed, and after the washing is completed, the cleaning liquid is rinsed with pure water, and thereafter, the pure water adhering to the semiconductor wafer is dried. I am trying to do it.
【０００４】このように、半導体製造工程において、半
導体ウエハの乾燥工程の回数は多く、処理時間、スペー
ス、コストに占める要因は非常に大きいものとなってい
る。このため、この種の乾燥装置として、短時間で乾燥
でき、しかも、省スペース、低コストの装置が求められ
ている。As described above, in the semiconductor manufacturing process, the number of times of drying the semiconductor wafer is large, and the factors occupying the processing time, space, and cost are very large. For this reason, as this type of drying apparatus, a space-saving and low-cost apparatus that can dry in a short time is demanded.
【０００５】一方、従来において半導体製造に使用され
る乾燥装置として、半導体ウエハを高速回転させてその
遠心力を利用するスピン乾燥機、さらに、このスピン乾
燥機の効率を向上させるため減圧、熱等を組合わせた改
良型スピン乾燥機が用いられている。On the other hand, as a drying apparatus conventionally used in semiconductor manufacturing, a spin dryer that rotates a semiconductor wafer at a high speed and uses the centrifugal force is used. Further, in order to improve the efficiency of the spin dryer, decompression, heat, etc. Is used.
【０００６】しかし、乾燥効率を向上させべく改良され
た改良型スピン乾燥機にあっても、半導体ウエハが大口
径化する等その製造条件の変化により、乾燥時間におい
て前記要求を満足できなくなっているのが現状である。However, even in the improved spin dryer improved to improve the drying efficiency, the above requirement cannot be satisfied in the drying time due to a change in manufacturing conditions such as an increase in the diameter of the semiconductor wafer. is the current situation.
【０００７】また、ウエハを回転自在に支持するための
回転支持機構や駆動源等を必要とするため、必然的に装
置が大型化し、かつ機構が複雑になり、省スペース、低
コストの前記要求を満足できないばかりでなく、ウエハ
エッヂ部が高速回転中に振動することによりチッピング
が発生したりするなどの問題がある。Further, since a rotation supporting mechanism and a driving source for rotatably supporting the wafer are required, the apparatus is inevitably increased in size and the mechanism is complicated, and the above-mentioned demands for space saving and low cost are required. Not only is not satisfied, but also there is a problem that the wafer edge portion vibrates during high-speed rotation to cause chipping.
【０００８】[0008]
【発明が解決しようとする課題】上述のように、従来の
半導体ウエハの乾燥方法および装置は、特に乾燥時間、
省スペース、低コスト化等において最近の要求を満すこ
とができなくなっており、これを解決し得る半導体ウエ
ハの乾燥方法および装置の提供が臨まれているのが現状
である。As described above, the conventional method and apparatus for drying a semiconductor wafer have a problem in that, in particular, the drying time,
Recently, it has become impossible to satisfy recent demands for space saving, cost reduction, and the like, and the present situation is to provide a method and an apparatus for drying a semiconductor wafer that can solve these problems.
【０００９】本発明は、上記事情に基づきなされたもの
で、その目的とするところは、洗浄後に半導体ウエハ上
に付着している純水を、短時間、省スペース、低コスト
で乾燥することができる半導体ウエハの乾燥方法および
装置を提供しようとするものである。The present invention has been made based on the above circumstances, and an object of the present invention is to dry pure water adhering on a semiconductor wafer after cleaning in a short time, in a small space, and at low cost. It is an object of the present invention to provide a method and apparatus for drying a semiconductor wafer.
【００１０】[0010]
【課題を解決するための手段】本発明は、上記目的を達
成するための第１の手段として、水蒸気を極めて透過し
易く、酸素、窒素等のガスを透過し難い高分子製ガス分
離膜を半導体ウエハの周囲に配置し、前記半導体ウエハ
と前記高分子製ガス分離膜との隙間に前記酸素、窒素等
のガスを導入して、前記半導体ウエハに付着している水
分を蒸気化し、前記高分子製ガス分離膜で水蒸気を分離
して乾燥させるようにしたものである。According to the present invention, as a first means for achieving the above-mentioned object, there is provided a polymer gas separation membrane which is very permeable to water vapor and hard to transmit gases such as oxygen and nitrogen. A gas such as oxygen or nitrogen is introduced into a gap between the semiconductor wafer and the polymer gas separation membrane to vaporize moisture adhering to the semiconductor wafer, and is disposed around the semiconductor wafer. The water vapor is separated by a molecular gas separation membrane and dried.
【００１１】これにより、従来の遠心力を利用するスピ
ン乾燥方法のものに比べて数十分の１と大幅な乾燥時間
の短縮が図れ、しいては半導体製造効率を大幅に向上で
きる。また、半導体ウエハの回転支持機構や駆動源等を
必要としないため、装置の小型化と機構の簡素化が図
れ、省スペース、低コストが図れ、また、ウエハエッヂ
部が高速回転中に振動することによりチッピングが発生
したりすることもなく安定した製品品質の維持が可能と
なる半導体ウエハの乾燥方法を提供できる。As a result, the drying time can be drastically reduced to several tens of times as compared with the conventional spin drying method utilizing centrifugal force, and the semiconductor manufacturing efficiency can be greatly improved. In addition, since a rotation support mechanism and a drive source for the semiconductor wafer are not required, the apparatus can be downsized and the mechanism can be simplified, space can be saved, cost can be reduced, and the wafer edge portion vibrates during high-speed rotation. Accordingly, it is possible to provide a method for drying a semiconductor wafer which can maintain stable product quality without causing chipping.
【００１２】また、第２の手段として、第１の手段にお
ける半導体ウエハと高分子製ガス分離膜との隙間に導入
する酸素、窒素等のガスを、別に設けた高分子製ガス分
離膜によって予備乾燥した圧縮ガスとしたものである。As a second means, a gas such as oxygen or nitrogen introduced into the gap between the semiconductor wafer and the polymer gas separation membrane in the first means is preliminarily protected by a polymer gas separation membrane provided separately. Dry compressed gas was used.
【００１３】これにより、半導体ウエハ表面の水分をよ
り速く水蒸気化し、高分子製ガス分離膜でより速く水蒸
気を分離できる。さらに、前記圧縮ガスを、半導体ウエ
ハと高分子製ガス分離膜との間に導入する直前に予備乾
燥することにより半導体ウエハ表面の水分をより効率良
く分離して乾燥することが可能となる。[0013] Thereby, the moisture on the surface of the semiconductor wafer is steamed more quickly, and the steam can be separated faster by the polymer gas separation membrane. Furthermore, by pre-drying the compressed gas immediately before introducing it between the semiconductor wafer and the polymer gas separation membrane, it is possible to more efficiently separate and dry the moisture on the surface of the semiconductor wafer.
【００１４】また、上記目的を達成するための第３の手
段として、被乾燥部材である半導体ウエハを支持するウ
エハ保持部材を有し、かつ、水蒸気を極めて透過し易
く、酸素、窒素等のガスを透過し難い性質を有する高分
子製ガス分離膜を、前記半導体ウエハとの間に隙間を存
する状態で配置してなる乾燥室と、この乾燥室内の前記
半導体ウエハと前記高分子製ガス分離膜との隙間に前記
酸素、窒素等のガスを導入するガス供給手段とを具備
し、前記酸素、窒素等のガスにより、前記半導体ウエハ
に付着している水分を蒸気化すると共に前記高分子製ガ
ス分離膜で水蒸気を分離して乾燥させるようにしたもの
である。Further, as a third means for achieving the above object, there is provided a wafer holding member for supporting a semiconductor wafer as a member to be dried, and is very easily permeable to water vapor, and is a gas such as oxygen or nitrogen. A drying chamber in which a polymer gas separation membrane having a property of being hardly permeated is disposed with a gap between the semiconductor wafer and the semiconductor wafer and the polymer gas separation membrane in the drying chamber. Gas supply means for introducing the oxygen, nitrogen or the like gas into the gap between the polymer gas and the polymer gas while vaporizing moisture adhering to the semiconductor wafer by the oxygen or nitrogen gas. Water vapor is separated by a separation membrane and dried.
【００１５】これにより、従来の遠心力を利用するスピ
ン乾燥装置のものに比べて数十分の１と大幅な乾燥時間
の短縮が図れ、しいては半導体製造効率を大幅に向上で
きる。また、半導体ウエハの回転支持機構や駆動源等を
必要としないため、装置の小型化と機構の簡素化が図
れ、省スペース、低コストが図れる。また、ウエハエッ
ヂ部が高速回転中に振動することによりチッピングが発
生したりすることもなく安定した製品品質の維持が可能
となる半導体ウエハの乾燥装置を提供できる。As a result, the drying time can be greatly reduced to several tenths of that of a conventional spin drying apparatus utilizing centrifugal force, and the semiconductor manufacturing efficiency can be greatly improved. In addition, since a rotation support mechanism for the semiconductor wafer, a driving source, and the like are not required, the size of the apparatus can be reduced, the mechanism can be simplified, and space and cost can be reduced. Further, it is possible to provide a semiconductor wafer drying apparatus capable of maintaining stable product quality without causing chipping due to vibration of the wafer edge portion during high-speed rotation.
【００１６】また、第４の手段として、前記第３の手段
のガス供給手段を、前記酸素、窒素等のガスを圧縮して
供給する圧縮ガス供給装置と、この圧縮ガス供給装置に
より供給される前記酸素、窒素等のガスを、水蒸気を極
めて透過し易く、酸素、窒素等のガスを透過し難い性質
を有する高分子製ガス分離膜によって予備乾燥する予備
乾燥装置と、この予備乾燥装置により予備乾燥した圧縮
ガスを前記半導体ウエハと前記高分子製ガス分離膜との
隙間に導くガス導入装置とを具備してなる構成としたも
のである。As a fourth means, the gas supply means of the third means is supplied by a compressed gas supply apparatus for compressing and supplying a gas such as oxygen or nitrogen. A pre-drying device for pre-drying the gas such as oxygen and nitrogen by a polymer gas separation membrane having a property of being very permeable to water vapor and hardly permeating gas such as oxygen and nitrogen; and A gas introduction device for introducing a dried compressed gas into a gap between the semiconductor wafer and the polymer gas separation membrane is provided.
【００１７】このように、酸素、窒素等のガスを、圧縮
ガス供給装置によって圧縮ガスとして供給するようにし
たから、半導体ウエハ表面の水分をより速く水蒸気化
し、高分子製ガス分離膜でより速く水蒸気を分離でき
る。さらに、前記圧縮ガスを、予備乾燥装置によって半
導体ウエハと高分子製ガス分離膜との間に導入する直前
に予備乾燥するようにしたから半導体ウエハ表面の水分
をより効率良く分離して乾燥することが可能となる。As described above, since gases such as oxygen and nitrogen are supplied as a compressed gas by the compressed gas supply device, the moisture on the surface of the semiconductor wafer is vaporized more quickly, and the water is more rapidly vaporized by the polymer gas separation membrane. Water vapor can be separated. Furthermore, since the compressed gas is pre-dried immediately before being introduced between the semiconductor wafer and the polymer gas separation membrane by the pre-drying device, the water on the surface of the semiconductor wafer is more efficiently separated and dried. Becomes possible.
【００１８】[0018]
【発明の実施の形態】以下、本発明の実施の形態の一例
について図１を参照して説明する。図１は本発明の乾燥
方法を実施するための半導体ウエハの乾燥装置を概略的
に示すもので、この乾燥装置１は、大別して乾燥装置本
体部２と、この乾燥装置本体部２に乾燥用ガスＧを導入
するガス供給手段としてのガス供給装置部３とからな
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG. FIG. 1 schematically shows a semiconductor wafer drying apparatus for carrying out the drying method of the present invention. The drying apparatus 1 is roughly divided into a drying apparatus main body 2 and a drying apparatus main body 2 for drying. And a gas supply unit 3 as gas supply means for introducing the gas G.
【００１９】乾燥装置本体部２は、次のような構成とな
っている。すなわち、乾燥装置本体部２は、水蒸気を極
めて透過し易く、酸素、窒素等のガスを透過し難い性質
を有する高分子製ガス分離膜４で形成されたチャンバ５
を有し、チャンバ５内に洗浄後の被乾燥部材である半導
体ウエハ６を収容する乾燥室７を形成した状態となって
いる。The drying device main body 2 has the following configuration. That is, the drying device main body 2 has a chamber 5 formed of a polymer gas separation membrane 4 having a property that water vapor is very easily permeated and gas such as oxygen and nitrogen is hardly permeated.
And a drying chamber 7 for accommodating a semiconductor wafer 6 as a member to be dried after cleaning is formed in the chamber 5.
【００２０】乾燥室７内には、ベース８上に配設された
複数のウエハ保持部材９の保持部分が臨んでおり、半導
体ウエハ６の表裏両面と前記高分子製ガス分離膜４との
間に、乾燥用ガスＧが流れ得る十分な隙間１０を存する
状態で半導体ウエハ６を保持するようになっている上記
チャンバ５を形成する高分子製ガス分離膜４は、宇部興
産（株）製の高分子製中空糸膜からなり、ステンレス製
の容器１１で保持されている。In the drying chamber 7, holding portions of a plurality of wafer holding members 9 arranged on a base 8 face, and a space between the front and back surfaces of the semiconductor wafer 6 and the polymer gas separation membrane 4 is provided. The polymer gas separation membrane 4 that forms the chamber 5 that holds the semiconductor wafer 6 with a sufficient gap 10 through which the drying gas G can flow is manufactured by Ube Industries, Ltd. It is made of a polymer hollow fiber membrane and is held in a stainless steel container 11.
【００２１】この容器１１は詳細に図示しないが、上部
材と下部材とからなり、上下方向に２分割可能となって
おり、前記乾燥室７に半導体ウエハ６を出し入れできる
ようになっている。また、容器１１の一側部には、高分
子製ガス分離膜４の相互対向面間に形成された前記乾燥
室７に連通する状態にガス導入口１２が、また、これと
は反対側に前記乾燥室７を通過した乾燥用ガスＧを外部
に導出するガス導出口１３が形成された状態となってい
る。Although not shown in detail, the container 11 is composed of an upper member and a lower member, and can be divided into two parts in the vertical direction, so that the semiconductor wafer 6 can be taken in and out of the drying chamber 7. A gas inlet 12 is provided on one side of the container 11 so as to communicate with the drying chamber 7 formed between the opposing surfaces of the polymer gas separation membrane 4. A gas outlet 13 for guiding the drying gas G that has passed through the drying chamber 7 to the outside is formed.
【００２２】一方、乾燥室７内に乾燥用ガスＧを導入す
るガス供給手段としてのガス供給装置部３は、次のよう
な構成となっている。すなわち、ガス供給装置部３は、
前記乾燥用ガスＧである酸素、窒素等のガス圧縮して供
給する圧縮ガス供給装置２０を有する。この実施形態で
は前記乾燥用ガスＧとして圧縮空気を使用するものであ
り、その圧縮ガス供給装置２０として吐出圧調整機能付
きの空気圧縮機やブロアー等が使用される。On the other hand, the gas supply unit 3 as gas supply means for introducing the drying gas G into the drying chamber 7 has the following configuration. That is, the gas supply device unit 3
There is a compressed gas supply device 20 for compressing and supplying the drying gas G such as oxygen and nitrogen. In this embodiment, compressed air is used as the drying gas G, and an air compressor or a blower having a discharge pressure adjusting function is used as the compressed gas supply device 20.
【００２３】さらに、この圧縮ガス供給装置２０のガス
供給方向下流側には、乾燥室７内に導入される直前にお
いて、前記圧縮ガス（圧縮空気）からなる乾燥用ガスＧ
を、予備乾燥する予備乾燥装置２１が設けられている。
この予備乾燥装置２１は、水蒸気を極めて透過し易く、
酸素、窒素等のガスを透過し難い性質を有する前述した
高分子製ガス分離膜４を用いたドライヤー２２で構成さ
れる。Further, immediately before being introduced into the drying chamber 7, a drying gas G comprising the compressed gas (compressed air) is provided downstream of the compressed gas supply device 20 in the gas supply direction.
Is provided with a preliminary drying device 21 for preliminary drying.
This preliminary drying device 21 is very easy to transmit water vapor,
The dryer 22 includes the above-described polymer gas separation membrane 4 having a property of hardly allowing gas such as oxygen and nitrogen to pass therethrough.
【００２４】また、予備乾燥装置２１としてのドライヤ
ー２２のガス導出端側は、配管２３からなるガス導入装
置２４を介して前記ガス導入口１２に接続されており、
予備乾燥した圧縮ガスからなる乾燥用ガスＧを前記半導
体ウエハ６と前記高分子製ガス分離膜４との隙間１０に
導くようになっている。The gas outlet end of a dryer 22 serving as a preliminary drying device 21 is connected to the gas inlet 12 through a gas introducing device 24 comprising a pipe 23.
A drying gas G composed of a pre-dried compressed gas is introduced into a gap 10 between the semiconductor wafer 6 and the polymer gas separation membrane 4.
【００２５】次に、このように構成された乾燥装置１の
作用について説明する。洗浄後の半導体ウエハ６を、ベ
ース８上に配設されたウエハ保持部材９で保持すること
で、水蒸気を極めて透過し易く、酸素、窒素等のガスを
透過し難い高分子製ガス分離膜４で形成されたチャンバ
５内、すなわち、乾燥室７に収納する。Next, the operation of the drying apparatus 1 thus configured will be described. By holding the semiconductor wafer 6 after cleaning with the wafer holding member 9 provided on the base 8, the polymer gas separation membrane 4 which is very easy to transmit water vapor and hardly allows gases such as oxygen and nitrogen to pass therethrough. Is stored in the chamber 5 formed by the above, that is, in the drying chamber 7.
【００２６】この後、乾燥室７にガス供給装置部３から
乾燥用のガスＧが導入される。この乾燥用のガスＧは、
予備乾燥装置２１としてのドライヤー２２により乾燥さ
れた圧縮空気であり、半導体ウエハ６の表裏（上下面）
と高分子製ガス分離膜４との隙間１０を通過中に、半導
体ウエハ６の表面に付着している水分を蒸気化させ、圧
縮空気からなる乾燥用ガスＧの圧力により水蒸気（Ｈ2
Ｏ）が高分子製ガス分離膜４を透過し、分離される。ま
た、乾燥用ガスＧはガス導出口１３より放出される。Thereafter, a drying gas G is introduced into the drying chamber 7 from the gas supply unit 3. The gas G for drying is
Compressed air dried by a dryer 22 serving as a preliminary drying device 21, and the front and back (upper and lower surfaces) of the semiconductor wafer 6.
The moisture adhering to the surface of the semiconductor wafer 6 is vaporized while passing through the gap 10 between the gas and the polymer gas separation membrane 4, and the vapor (H 2) is generated by the pressure of the drying gas G composed of compressed air.
O) permeates through the polymer gas separation membrane 4 and is separated. Further, the drying gas G is released from the gas outlet 13.
【００２７】なお、高分子製ガス分離膜４により分離さ
れた水蒸気（Ｈ2 Ｏ）は、高分子製ガス分離膜４を保持
するステンレス製の容器１１に形成された図示しない透
孔から外部に放出される。The water vapor (H 2 O) separated by the polymer gas separation membrane 4 passes through a through hole (not shown) formed in the stainless steel container 11 holding the polymer gas separation membrane 4 to the outside. Released.
【００２８】本発明の乾燥装置１により、洗浄後、純水
でリンスした８インチの半導体ウエハ６を圧縮空気０．
５ＭＰａ、流量１５ＮＩ／Ｍｉｎの条件で１min 乾燥し
た結果、半導体ウエハ６は完全に乾燥された。After being cleaned by the drying apparatus 1 of the present invention, the semiconductor wafer 6 of 8 inches rinsed with pure water is compressed with compressed air of 0.
As a result of drying for 1 minute under the conditions of 5 MPa and a flow rate of 15 NI / Min, the semiconductor wafer 6 was completely dried.
【００２９】このように、半導体ウエハ６の乾燥時間
は、従来のスピン乾燥機の１／２０と大幅な乾燥時間の
短縮が図れ、しいては半導体製造効率を大幅に向上でき
る。また、本発明の乾燥方法および装置は、半導体ウエ
ハ６の回転支持機構や駆動源等を必要としないため、装
置の小型化と機構の簡素化が図れ、省スペース、低コス
トが図れる。また、ウエハエッヂ部が高速回転中に振動
することによりチッピングが発生したりすることもなく
安定した製品品質の維持が可能となった。なお、本発明
は上記実施の形態に限らず、本発明の要旨を変えない範
囲で種々変形実施可能なことは勿論である。As described above, the drying time of the semiconductor wafer 6 is 1/20 that of a conventional spin drier, and the drying time can be greatly reduced, and the semiconductor manufacturing efficiency can be greatly improved. Further, the drying method and apparatus of the present invention do not require a rotation support mechanism for the semiconductor wafer 6, a driving source, and the like, so that the apparatus can be downsized and the mechanism can be simplified, and space and cost can be reduced. In addition, it is possible to maintain stable product quality without causing chipping due to vibration of the wafer edge portion during high-speed rotation. The present invention is not limited to the above-described embodiment, but can be variously modified without departing from the spirit of the present invention.
【００３０】[0030]
【発明の効果】以上述べたように本発明によれば、次の
ような効果を奏する。請求項１の乾燥方法によれば、水
蒸気を極めて透過し易く、酸素、窒素等のガスを透過し
難い高分子製ガス分離膜を半導体ウエハの周囲に配置
し、前記半導体ウエハと前記高分子製ガス分離膜との隙
間に前記酸素、窒素等のガスを導入して、前記半導体ウ
エハに付着している水分を蒸気化し、前記高分子製ガス
分離膜で水蒸気を分離して乾燥させるようにしたもので
ある。これにより、従来の遠心力を利用するスピン乾燥
方法のものに比べて数十分の１と大幅な乾燥時間の短縮
が図れ、しいては半導体製造効率を大幅に向上できる。
また、半導体ウエハの回転支持機構や駆動源等を必要と
しないため、装置の小型化と機構の簡素化が図れ、省ス
ペース、低コストが図れ、また、ウエハエッヂ部が高速
回転中に振動することによりチッピングが発生したりす
ることもなく安定した製品品質の維持が可能となる半導
体ウエハの乾燥方法を提供できるといった効果を奏す
る。As described above, according to the present invention, the following effects can be obtained. According to the drying method of the first aspect, a polymer gas separation membrane that is very permeable to water vapor and hard to transmit gases such as oxygen and nitrogen is disposed around a semiconductor wafer, and the semiconductor wafer and the polymer The gas such as oxygen or nitrogen is introduced into the gap between the gas separation membrane and the moisture adhering to the semiconductor wafer is vaporized, and the polymer gas separation membrane separates the water vapor to dry. Things. As a result, the drying time can be drastically reduced to several tenths of that of the conventional spin drying method using centrifugal force, and the semiconductor manufacturing efficiency can be greatly improved.
In addition, since a rotation support mechanism and a drive source for the semiconductor wafer are not required, the apparatus can be downsized and the mechanism can be simplified, space can be saved, cost can be reduced, and the wafer edge portion vibrates during high-speed rotation. Accordingly, there is an effect that a method for drying a semiconductor wafer can be provided which can maintain stable product quality without causing chipping.
【００３１】また、請求項２の乾燥方法によれば、請求
項１の乾燥方法における半導体ウエハと高分子製ガス分
離膜との隙間に導入する酸素、窒素等のガスを、別に設
けた高分子製ガス分離膜によって予備乾燥した圧縮ガス
としたものである。これにより、半導体ウエハ表面の水
分をより速く水蒸気化し、高分子製ガス分離膜でより速
く水蒸気を分離できる。さらに、前記圧縮ガスを、半導
体ウエハと高分子製ガス分離膜との間に導入する直前に
予備乾燥することにより半導体ウエハ表面の水分をより
効率良く分離して乾燥することが可能となる。According to the drying method of the present invention, a gas such as oxygen and nitrogen introduced into the gap between the semiconductor wafer and the polymer gas separation membrane in the drying method of the present invention is provided separately. The compressed gas was preliminarily dried by a gas separation membrane. As a result, the moisture on the surface of the semiconductor wafer is turned into steam more quickly, and the steam can be separated more quickly by the polymer gas separation membrane. Furthermore, by pre-drying the compressed gas immediately before introducing it between the semiconductor wafer and the polymer gas separation membrane, it is possible to more efficiently separate and dry the moisture on the surface of the semiconductor wafer.
【００３２】また、請求項３の乾燥装置によれば、被乾
燥部材である半導体ウエハを支持するウエハ保持部材を
有し、かつ、水蒸気を極めて透過し易く、酸素、窒素等
のガスを透過し難い性質を有する高分子製ガス分離膜
を、前記半導体ウエハとの間に隙間を存する状態で配置
してなる乾燥室と、この乾燥室内の前記半導体ウエハと
前記高分子製ガス分離膜との隙間に前記酸素、窒素等の
ガスを導入するガス供給手段とを具備し、前記酸素、窒
素等のガスにより、前記半導体ウエハに付着している水
分を蒸気化すると共に前記高分子製ガス分離膜で水蒸気
を分離して乾燥させるようにしたものである。これによ
り、従来の遠心力を利用するスピン乾燥装置のものに比
べて数十分の１と大幅な乾燥時間の短縮が図れ、しいて
は半導体製造効率を大幅に向上できる。また、半導体ウ
エハの回転支持機構や駆動源等を必要としないため、装
置の小型化と機構の簡素化が図れ、省スペース、低コス
トが図れる。また、ウエハエッヂ部が高速回転中に振動
することによりチッピングが発生したりすることもなく
安定した製品品質の維持が可能となる半導体ウエハの乾
燥装置を提供できるといった効果を奏する。According to the third aspect of the present invention, the drying apparatus has a wafer holding member for supporting a semiconductor wafer as a member to be dried, and is very permeable to water vapor, and is permeable to gases such as oxygen and nitrogen. A drying chamber in which a polymer gas separation membrane having difficult properties is arranged with a gap between the semiconductor wafer and the semiconductor wafer; and a gap between the semiconductor wafer and the polymer gas separation membrane in the drying chamber. A gas supply means for introducing a gas such as oxygen, nitrogen or the like, and the gas such as oxygen or nitrogen vaporizes moisture adhering to the semiconductor wafer, and the polymer gas separation membrane The steam is separated and dried. As a result, the drying time can be drastically reduced to several tenths of that of a conventional spin drying apparatus using centrifugal force, and the semiconductor manufacturing efficiency can be greatly improved. In addition, since a rotation support mechanism for the semiconductor wafer, a driving source, and the like are not required, the size of the apparatus can be reduced, the mechanism can be simplified, and space and cost can be reduced. In addition, there is an effect that it is possible to provide a semiconductor wafer drying apparatus capable of maintaining stable product quality without causing chipping due to vibration of the wafer edge portion during high-speed rotation.
【００３３】また、請求項４の乾燥装置によれば、請求
項３の乾燥装置におけるガス供給手段を、前記酸素、窒
素等のガスを圧縮して供給する圧縮ガス供給装置と、こ
の圧縮ガス供給装置により供給される前記酸素、窒素等
のガスを、水蒸気を極めて透過し易く、酸素、窒素等の
ガスを透過し難い性質を有する高分子製ガス分離膜によ
って予備乾燥する予備乾燥装置と、この予備乾燥装置に
より予備乾燥した圧縮ガスを前記半導体ウエハと前記高
分子製ガス分離膜との隙間に導くガス導入装置とを具備
してなる構成としたものである。このように、酸素、窒
素等のガスを、圧縮ガス供給装置によって圧縮ガスとし
て供給するようにしたから、半導体ウエハ表面の水分を
より速く水蒸気化し、高分子製ガス分離膜でより速く水
蒸気を分離できる。さらに、前記圧縮ガスを、予備乾燥
装置によって半導体ウエハと高分子製ガス分離膜との間
に導入する直前に予備乾燥するようにしたから半導体ウ
エハ表面の水分をより効率良く分離して乾燥することが
可能となるといった効果を奏する。According to the drying apparatus of the fourth aspect, the gas supply means in the drying apparatus of the third aspect is provided with a compressed gas supply apparatus for compressing and supplying the gas such as oxygen and nitrogen, and A pre-drying device for pre-drying the gas supplied by the device, such as oxygen, nitrogen, etc., by a polymer gas separation membrane having a property of being very easily permeable to water vapor and hardly permeating gas such as oxygen, nitrogen, etc. A gas introduction device for guiding a compressed gas preliminarily dried by a predrying device to a gap between the semiconductor wafer and the polymer gas separation membrane is provided. As described above, since gases such as oxygen and nitrogen are supplied as compressed gas by the compressed gas supply device, the moisture on the surface of the semiconductor wafer is vaporized more quickly, and the vapor is separated more quickly by the polymer gas separation membrane. it can. Furthermore, since the compressed gas is pre-dried immediately before being introduced between the semiconductor wafer and the polymer gas separation membrane by the pre-drying device, the water on the surface of the semiconductor wafer is more efficiently separated and dried. It is possible to achieve the effect that it becomes possible.
【図１】本発明の乾燥装置の一例を概略的に示す図。FIG. 1 is a view schematically showing an example of a drying apparatus of the present invention.
１…乾燥装置 ２…乾燥装置本体部 Ｇ…乾燥用ガス ３…ガス供給装置部（ガス供給手段） ４…高分子製ガス分離膜 ５…チャンバ ６…半導体ウエハ ７…乾燥室 ８…ベース ９…ウエハ保持部材 １０…隙間 １１…容器 １２…ガス導入口 １３…ガス導出口 ２０…圧縮ガス供給装置 ２１…予備乾燥装置 ２２…ドライヤー ２３…配管 ２４…ガス導入装置 DESCRIPTION OF SYMBOLS 1 ... Drying device 2 ... Drying device main part G ... Drying gas 3 ... Gas supply device part (gas supply means) 4 ... Polymer gas separation membrane 5 ... Chamber 6 ... Semiconductor wafer 7 ... Drying chamber 8 ... Base 9 ... Wafer holding member 10 Gap 11 Container 12 Gas inlet 13 Gas outlet 20 Compressed gas supply device 21 Preliminary drying device 22 Dryer 23 Piping 24 Gas introduction device
Claims (4)
のガスを透過し難い高分子製ガス分離膜を半導体ウエハ
の周囲に配置し、 前記半導体ウエハと前記高分子製ガス分離膜との隙間に
前記酸素、窒素等のガスを導入して、前記半導体ウエハ
に付着している水分を蒸気化し、 前記高分子製ガス分離膜で水蒸気を分離して乾燥させる
ことを特徴とする半導体ウエハの乾燥方法。1. A polymer gas separation membrane, which is very permeable to water vapor and hardly permeates gases such as oxygen and nitrogen, is disposed around a semiconductor wafer, and is provided between the semiconductor wafer and the polymer gas separation membrane. A gas such as oxygen or nitrogen is introduced into the gap to vaporize moisture adhering to the semiconductor wafer, and water vapor is separated and dried by the polymer gas separation membrane. Drying method.
分子製ガス分離膜によって予備乾燥した圧縮ガスである
ことを特徴とする請求項１に記載の半導体ウエハの乾燥
方法。2. The method for drying a semiconductor wafer according to claim 1, wherein the gas such as oxygen or nitrogen is a compressed gas preliminarily dried by a polymer gas separation membrane provided separately.
ウエハ保持部材を有し、かつ、水蒸気を極めて透過し易
く、酸素、窒素等のガスを透過し難い性質を有する高分
子製ガス分離膜を、前記半導体ウエハとの間に隙間を存
する状態で配置してなる乾燥室と、 この乾燥室内の前記半導体ウエハと前記高分子製ガス分
離膜との隙間に前記酸素、窒素等のガスを導入するガス
供給手段と、を具備し、 前記酸素、窒素等のガスにより、前記半導体ウエハに付
着している水分を蒸気化すると共に前記高分子製ガス分
離膜で水蒸気を分離して乾燥させることを特徴とする半
導体ウエハの乾燥装置。3. A polymer gas separation membrane having a wafer holding member for supporting a semiconductor wafer which is a member to be dried, and having a property of being extremely permeable to water vapor and difficult to pass gases such as oxygen and nitrogen. And a drying chamber in which a gap is provided between the semiconductor wafer and the semiconductor wafer. The gas such as oxygen or nitrogen is introduced into a gap between the semiconductor wafer and the polymer gas separation membrane in the drying chamber. A gas supply unit that performs vaporization of moisture adhering to the semiconductor wafer with a gas such as oxygen and nitrogen, and separating and drying water vapor with the polymer gas separation membrane. Characteristic semiconductor wafer drying device.
給装置と、 この圧縮ガス供給装置により供給される前記酸素、窒素
等のガスを、水蒸気を極めて透過し易く、酸素、窒素等
のガスを透過し難い性質を有する高分子製ガス分離膜に
よって予備乾燥する予備乾燥装置と、 この予備乾燥装置により予備乾燥した圧縮ガスを前記半
導体ウエハと前記高分子製ガス分離膜との隙間に導くガ
ス導入装置と、を具備してなることを特徴とする請求項
３に記載の半導体ウエハの乾燥装置。4. The gas supply means comprises: a compressed gas supply device for compressing and supplying the gas such as oxygen and nitrogen; and supplying the gas such as oxygen and nitrogen supplied by the compressed gas supply device with water vapor. A pre-drying device for pre-drying with a polymer gas separation membrane having a property of being very easy to permeate and hardly permeating gases such as oxygen and nitrogen; and 4. The apparatus for drying a semiconductor wafer according to claim 3, further comprising: a gas introduction device for guiding a gap between the gas separation membrane and the molecular gas separation membrane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5821498A JPH11260791A (en) | 1998-03-10 | 1998-03-10 | Drying method of semiconductor wafer and drying equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5821498A JPH11260791A (en) | 1998-03-10 | 1998-03-10 | Drying method of semiconductor wafer and drying equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11260791A true JPH11260791A (en) | 1999-09-24 |
Family
ID=13077817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5821498A Pending JPH11260791A (en) | 1998-03-10 | 1998-03-10 | Drying method of semiconductor wafer and drying equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11260791A (en) |
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