JP2520833B2 - Immersion of the liquid processing apparatus - Google Patents

Immersion of the liquid processing apparatus

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JP2520833B2
JP2520833B2 JP35543792A JP35543792A JP2520833B2 JP 2520833 B2 JP2520833 B2 JP 2520833B2 JP 35543792 A JP35543792 A JP 35543792A JP 35543792 A JP35543792 A JP 35543792A JP 2520833 B2 JP2520833 B2 JP 2520833B2
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container
wafer
liquid
substrate
developer
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JPH07132262A (en
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太田  実
修 平河
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東京エレクトロン株式会社
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【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【産業上の利用分野】開示技術は、半導体製造装置に関する発明であり、特に、フォトレジスト膜の塗布装置や現像装置に適用するに好適な浸漬式の液処理装置に係わる発明である。 Disclosed technique relates to a an invention relates to a semiconductor manufacturing device, in particular, an invention relating to a liquid processing apparatus according to a preferred immersion to apply the coating apparatus and the developing device of the photoresist film.

【0002】 [0002]

【従来の技術】当業者に周知の如く、一般に、半導体の製造工程においては、ウエハ等の被処理基板の全面に膜体が一様に被着される工程、例えば、フォトレジスト膜を被着させる現像処理工程には、工程の高効率化のための無人化や連続処理を促進する等の見地から被処理基板を1枚ずつ液処理する所謂枚葉式のスピン現像装置が使用されている。 As is well known in the Prior Art Those skilled in the art, generally, in the semiconductor manufacturing process comprises the steps of film body on the entire surface of the substrate such as a wafer is uniformly applied, for example, depositing a photoresist film the developing processing step of, so-called single wafer spin developing device for liquid processing one by one substrate to be processed unmanned and continuous processing from the viewpoint of such as to facilitate for the efficiency of the process is used .

【0003】該種枚葉式のスピン現像装置においては、 [0003] In the spin developing device of the seed leaf expression,
通常吐出ノズル、或いは、スプレー等により現像液を被処理基板上に放出して該現像液の表面張力の作用を介して液盛りするようにしているのであるが、該表面張力の作用により被処理基板上に液盛りし得る液量には限度があり、又、吐出ノズルやスプレーにて現像液の放出をした場合、経時的に全面均一の液盛り状態にはならず、したがって、該被処理基板上での好ましくない液むらの発生や吐出現像液の基板への衝突による悪影響は防ぎ得ない。 Usually the discharge nozzle, or, but with each other to the developer so as to puddle through the action of surface tension of the developing solution was discharged on a substrate to be processed by spray or the like, to be treated by the action of the surface tension the amount of liquid can puddle on the substrate is limited, also when the release of the developer at the discharge nozzle and spray, over time not to puddle state of the entire surface uniformly, therefore, 該被 process adverse effects of a collision on the substrate occurs and the discharge developer undesirable solution unevenness on the substrate can not prevent.

【0004】又、近年使用されるようになった現像液としては、解像度を向上させるために界面活性剤を添加した現像液や表面張力の低い現像液が使用される傾向があり、被処理基板上に表面張力の作用のみにより必要量の現像液を液盛りすることが困難となったため、スピン現像装置に替えて浸漬式の現像装置が望まれるようになってきた。 [0004] In recent years as the developer came to be used, tend to lower the developer of the developer and the surface tension by adding a surfactant in order to improve the resolution is used, the substrate to be processed because it is difficult to puddle the necessary amount of the developer only by the action of surface tension on, immersion of the developing devices have become desirable in place of the spin developing device.

【0005】かかる点を考慮した装置として、例えば、 [0005] As an apparatus in consideration of this point, for example,
図5に示す様に、実開昭60−52622号公報にて開示された態様等の浸漬式の現像装置がある。 As shown in FIG. 5, there is an immersion in a developing apparatus such as embodiments disclosed in Japanese Utility Model 60-52622 JP.

【0006】即ち、当該図5に示す浸漬式の現像装置の態様においては、容器1内に設けたウエハホルダ3の内側に設けられた段部4に被処理基板としてのウエハ5をウエハチャック2を介して収納セットし、現像液6内に浸漬して該ウエハ5の下面周辺部とウエハホルダ3の内側の段部4とを接触状態にさせ、ウエハ5上に現像液6 [0006] That is, in the embodiment of the immersion type developing apparatus shown in the figure 5, the wafer 5 as the target substrate with the stepped portion 4 provided on the inner side of the wafer holder 3 provided in the container 1 the wafer chuck 2 housed set via, was immersed in a developing solution 6 to the stepped portion 4 of the inner lower surface peripheral portion and the wafer holder 3 of the wafer 5 in contact, the developer on the wafer 5 6
を液盛り状にして該ウエハ5を該現像液6に対し浸漬状態で現像処理を行うようにするものである。 The in the puddle shape and is to perform development processing with immersion state to said developer 6 the wafer 5.

【0007】 [0007]

【発明が解決しようとする課題】しかしながら、上述の如くこれまで知られている浸漬式の処理装置にあっては、容器1内に設けたウエハチャック2を軸装するウエハホルダ3の内側に設けられた段部4にも該段部4を介して載置したウエハ5の上面に対すると同様に現像液6 [SUMMARY OF THE INVENTION However, in the processing apparatus of the immersion type known heretofore as described above, provided the wafer chuck 2 provided in the container 1 inside the wafer holder 3 to JikuSo It was stepped portion 4 to be stepped portion 4 through by placing the wafer 5 in the respect to the upper surface likewise developer 6
を液盛りすることになるため、現像後、該ウエハ5をウエハチャック2を介して高速回転し、ウエハ5の上面に図示しないリンス液等を吹きつけて該ウエハ5を洗浄するが、その際に遠心作用を受けて飛散したリンス液が段部4に付着して該段部4に残存する現像液6と混ざり、 Since that will the puddle, after development, the wafer 5 rotated at a high speed through the wafer chuck 2, but blows not shown on the upper surface of the wafer 5 rinsing liquid such as by washing the wafer 5, in which rinsing liquid scattered receives a centrifugal action mixed with a developer 6 remaining in stepped portion 4 attached to the step portion 4,
その結果、好ましくない現像むらが生じ易い欠点がある。 As a result, there is likely disadvantages occur undesirably uneven development.

【0008】又、現像終了後の現像液6の排液処理機構としてウエハ5をウエハホルダ3の段部4から浮揚することにより現像液6を該ウエハホルダ3の内周部に流下し、その内底部に形成した排液孔7から排液するようにするようにされてあるため、該現像液6がウエハ5の周辺部の裏面に付着して残存し易く、且つ、ウエハチャック2の下部よりその内側の軸装部に浸入して筒状部8内を通りモータ9にかかる懸念があることが避け難い難点がある。 [0008] Further, the wafer 5 as a drainage processing mechanism of the developer 6 After the development a developing solution 6 flows down on the inner peripheral portion of the wafer holder 3 by flotation from the stepped portion 4 of the wafer holder 3, the inner bottom portion since that is adapted to so that drainage from the drainage hole 7 formed in, easily developing solution 6 remains attached to the back surface of the peripheral portion of the wafer 5, and its lower portion of the wafer chuck 2 there is the unavoidable disadvantage that there is intrusion concerned according as the motor 9 a cylindrical portion 8 to JikuSo portion of the inner.

【0009】更に、該排液孔7がウエハホルダ3の内底部に設けられた構造のため、設計的に機構上の制約を受け、該排液孔7の断面積を大きくとれず、したがって、 Furthermore, since the exhaust inlet hole 7 is provided on the inner bottom portion of the wafer holder 3 structure, designed to receive a restriction on the mechanism, increasing the cross-sectional area of ​​the exhaust inlet hole 7 Torezu, therefore,
排液速度が遅くなるという不具合がある。 There is a problem that the drainage speed is slow.

【0010】又、現像液6は温度の影響が大きく、したがって、温度変化により現像むら等の生じ易いマイナス点がある。 [0010] Also, the developer 6 greatly affected by temperature, therefore, there is likely a negative point to occur, such as uneven development due to temperature changes.

【0011】これらのことは、レジスト塗布装置等の液処理装置にあっても同様の問題であった。 [0011] These things were similar problems even in liquid processing apparatus such as a resist coating apparatus.

【0012】 [0012]

【発明の目的】この発明の目的は上述従来技術に基づく現像等の液処理の問題点を解決すべき技術的課題とし、 SUMMARY OF THE INVENTION An object of the invention is a technical problem to be solved the problem of liquid processing such as development based on the above prior art,
ウエハ等の被処理基板に対しクリーンで処理むらが少く、信頼性、及び、スループット性が高く、枚葉式液処理に適合し得るようにして機械装置産業における液処理技術利用分野に益する優れた浸漬式の液処理装置を提供せんとするものである。 Clean processing unevenness to a substrate to be processed such as a wafer is reduced, reliability, and throughput of high, excellent Ekisuru liquid processing techniques FIELD in machinery industry as can fit single wafer liquid processing there is provided cents immersion liquid processing apparatus.

【0013】 [0013]

【課題を解決するための手段】上述目的に沿い先述特許請求の範囲を要旨とするこの発明の構成は、前述課題を解決するために、被処理基板の下面周辺部に接触して収納容器の底面部を成す下側の第一の容器と、該被処理基板より大きな内径と下向き内側傾斜面が設けられた内壁とを有して第一の容器の上面周縁部と接触して収納容器の側壁部を構成する上側の第二の容器と、該第一の容器と該第二の容器から成る収納容器内に処理液を非衝撃的に供給する処理液供給機構と処理液に対する温度調整機構とが第二の容器内に設けられ、第一の容器の下側中央部に設けられ被処理基板を真空吸着により保持し回転して処理液等を遠心力により飛散させる回転機構と、収納容器の外側にあって第一の容器と第二の容器を離間させると共に、該回転 [Means for Solving the Problems] of the present invention to subject matter the scope of the foregoing claims along above object structure, in order to solve the above problem, the container in contact with the lower surface peripheral portion of the substrate to be processed a first container of lower forming a bottom portion, of the container in contact with the top rim portion of the first container has an inner wall that a large inner diameter and down inner inclined surfaces than 該被 substrate is provided the upper constituting the side wall portion and second container and, said first container and the temperature adjustment mechanism of the treatment liquid in the storage container made of said second container relative non-impact supplying process liquid supply mechanism and the treatment liquid Doo is provided within the second container and a rotating mechanism for scattered by the centrifugal force the lower central portion of the substrate to be processed mounted on and held by vacuum suction rotation and the processing liquid or the like of the first container, the container together to separate the first container and the second container be outside of the rotary 構に被処理基板を受け渡す昇降駆動機構と離間された第一の容器と第二の容器との間から気体を下方に排気する排気手段とを備え、回転機構で被処理基板を回転して該被処理基板上の液体を振り切る際、 And an exhaust means for exhausting the gas downwardly from the space between the first container and the second container are separated from the elevation driving mechanism transferring the substrates to be processed structure, by rotating the target substrate at a rotational mechanism when shaking off the liquid on 該被 substrate,
振り切られた液体は、第二の容器の下向き内側傾斜面に当り、これに前後して発生する飛散ミストは排気手段により排気されるようにされているようにした技術的手段を講じたものである。 It spun off liquid strikes downward inner inclined surface of the second container, but is scattered mist generated in succession thereto that have taken technical means as are to be exhausted by the exhaust means is there.

【0014】 [0014]

【作用】而して、収納容器を成す下側の第一の容器、及び、該第一の容器よりは大きな内径であって同芯的に上外側に配設させた第二の容器に対し被処理基板をそれぞれ接触させて収納セットし、該被処理基板上に該被処理基板が浸漬するに充分な量の処理液を第二の容器の処理液供給機構の液吐出口より温度調整機構により定温状態で内側に向け吐出して可及的同時に非衝撃的に被処理基板の上面に全面均一に液盛り状態にし、処理むらや液の吐出時の被処理基板への衝撃付与のない浸漬状態にして所定の液処理が出来るようにし、液処理後は両容器、及び、被処理基板を昇降駆動機構を介して相互に離反し、 [Action] by Thus, the first container of lower forming a container, and, rather than said first container to a second container is arranged above the outer be in concentric manner a larger inner diameter the substrate to be processed accommodated set in contact respectively, a temperature adjusting mechanism than a sufficient amount of treatment liquid liquid discharge port of the second container of processing liquid supplying mechanism to said substrate is immersed to said processed substrate the entire surface uniformly puddled state to the discharge to as much as possible at the same time non-impact manner the upper surface of the substrate inwardly at a constant temperature state, the impact applied without immersion in the target substrate during the discharge process unevenness and liquid in the state as it is predetermined liquid processing, after the liquid processing both containers, and then away from each other via a lifting drive mechanism a substrate to be processed,
処理液は該被処理基板上からオーバーフローし、両容器間から処理液を落下し、第一の容器にセットされた被処理基板は真空吸着式の回転機構により回転されて処理液を遠心力で振り切り、振り切られた処理液は第一の容器の下向き内側傾斜面23に当って落下し、排液孔から排液し、その間、洗浄液を放出し、発生するミストや乾燥気体を下方に排気するようにしたものである。 Processing liquid overflowing from 該被 processed substrate, dropped the treatment liquid from between the container and the rotated treatment liquid by centrifugal force target substrate set on the first container by the rotation mechanism of the vacuum adsorption type shaking, the thrown off the process liquid falls hitting downward inner inclined surface 23 of the first container, drained from the drainage hole, during which the cleaning solution was discharged, to exhaust the generated mist or dry gas downwardly it is obtained by way.

【0015】 [0015]

【実施例】次に、この発明の1実施例を図1乃至図4に基づいて説明すれば以下の通りである。 EXAMPLES Next will be hereinafter described with reference to an embodiment in FIGS. 1 to 4 of the present invention.

【0016】尚、図5と同一態様部分は同一符号を用いて説明するものとする。 [0016] Incidentally, FIG. 5 the same manner parts shall be described using the same reference numerals.

【0017】図示実施例は、半導体製造装置の現像装置に適用した態様である。 The illustrated embodiment is an embodiment applied to a developing device of a semiconductor manufacturing device.

【0018】37はドーナツ状の収納容器であって、同じくドーナツ状の同芯的な下側の第一の容器14とこれより大径の上外側の第二の容器15とから成り、該収納容器37内の中央部には、例えば、真空チャック等により被処理基板としてのウエハ5を下側から吸着して保持し回転機構を成すウエハチャック12が設けられており、該ウエハチャック12は下側の固定部31に取り付け固定されたモータ30によって回転自在にされている。 [0018] 37 is a donut-shaped container, also consists of a donut-shaped concentric specific lower first container 14 than this on the large-diameter outer second container 15. of the housing the central portion of the container 37, for example, by a vacuum chuck or the like and a wafer chuck 12 that forms a rotation mechanism and held by suction is provided a wafer 5 as the substrate to be processed from below, the wafer chuck 12 is below It is rotatable by a motor 30 which is fixedly attached to the fixed portion 31 side.

【0019】又、収納容器37の外側一側には該収納容器37を昇降する昇降駆動部39が設けられており、該昇降駆動部39は、下側の固定部31に取り付け固定され、収納容器37を昇降すると共に前記ウエハチャック12に被処理基板5を受け渡す主エアシリンダ32を有し、該主エアシリンダ32のロッド33の先端は収納容器37の第二の容器15に連結され、これを昇降する昇降金具34がアンダーハング状に延設固定され、該昇降金具34の先端には伸縮する副エアシリンダ35が上向きに固設され、そのロッド36が第一の容器14の底部に連結固設されている。 [0019] Also, the outside one side of the housing container 37 is elevation driving unit 39 for lifting the container 37 is provided, the elevation driving section 39 is fixedly attached to the fixed portion 31 of the lower, housing transferring the target substrate 5 on the wafer chuck 12 while lifting the container 37 has a main air cylinder 32, the tip of the rod 33 of the main air cylinder 32 is connected to the second container 15 of the container 37, lifting bracket 34 to lift it is extended secured to underhung shape, the tip of the elevating bracket 34 is upwardly fixed secondary air cylinder 35 to expand and contract, its rod 36 is the bottom of the first container 14 It is connected fixed.

【0020】一方、該第一の容器14の内側上部には図2に示す様に、ウエハ5の裏面を洗浄する洗浄ノズル2 Meanwhile, the inside top of said first vessel 14 as shown in FIG. 2, the cleaning nozzle 2 for cleaning the back surface of the wafer 5
6が第二の容器15との間に設けられ、洗浄液が該ウエハ5の裏面に対する洗浄作用をなした後、ウエハ5の外周方向に流過するように指向され、下側の洗浄液流入口25に連通している。 6 is provided between the second container 15, after the cleaning liquid has no cleaning action on the back surface of the wafer 5, is directed to flow through the outer circumference of the wafer 5, the lower side of the cleaning liquid inlet 25 and it communicates with.

【0021】更に、第一の容器14の上面にはウエハ5 Furthermore, on the upper surface of the first container 14 the wafer 5
の下面周辺部に対して真空吸着することにより液密状にシールする、例えば、シリコンゴム製のリップ型の環状の下シール13が下バックアップリング部16によって上向きに固定されている。 Sealing a liquid-tight manner by vacuum suction against a lower surface peripheral portion of, for example, silicone rubber lip type annular lower seal 13 is fixed upward by the lower backup ring 16.

【0022】そして、該下シール13と下バックアップリング部16には真空吸引のための下開きの吸引口が設けられて第一の容器14の真空吸引口20と共に真空吸引接続口17に連通し、真空吸引可能にされている。 [0022] Then, the lower seal 13 and lower backup ring portion 16 communicates with a vacuum suction connecting port 17 with a vacuum suction port 20 of the first container 14 with the suction port of the opening bottom is provided for the vacuum suction It is allowing vacuum suction.

【0023】而して、第一の容器14の下面内部には、 [0023] In Thus, the lower surface inside the first container 14,
現像液6の排液が該第一の容器14の下面内側に流入してモータ30にかかるのを防ぐため外周部に外向きに傾斜する側壁の傾斜面23とその下側の仕切板29が環状に設けられ、第一の容器14の下面外側寄りには現像液6を排液するための排液管28が下延して設けられている。 Drainage inclined surface 23 and the lower partition plate 29 that side wall inclined outwardly to the outer peripheral portion to prevent the applied to the motor 30 flows into the lower surface inside of the first container 14 of the developing solution 6 provided in an annular drainage pipe 28 for the lower surface outboard of the first container 14 for draining the developer 6 are provided cast down.

【0024】又、該排液管28には、気体を排出する排気手段としての排気口24が共有的に形成されて図示しない排気装置に接続されている。 [0024] Further, the exhaust liquid pipe 28, the exhaust port 24 as an exhaust means for exhausting gas is connected to an exhaust device (not shown) are covalently formation.

【0025】一方、第一の容器14の上方外側には同芯的に該第一の容器14を取り囲むようにそれより大径であって熱容量の大きな第二の容器15が配置されてその内側に於ては図2に詳示する様に、現像液6を供給するための所定数複数の処理液供給機構としての吐出口2 On the other hand, the upper outside of the first container 14 inside which is arranged it than a diameter larger second container 15 of the heat capacity so as to surround the vessel 14 of the core to said first as shown in detail in Figure 2 at a developing solution of 6 as a predetermined number plurality of processing liquid supply mechanism for supplying the discharge port 2
1,21…が内壁面上部に開口され、又、浸漬処理後に該現像液6を強制的に排液するためのその下側の同じく所定数複数の吸引排液口27,27…と、現像液6を一定の温度に保って現像むらの生じないようにするための温水等を供給循環する環状の温度調整機構としての温調水流路22とが設けられており、その下側には下方外向き傾斜面23が形成されている。 1,21 ... are opened on the inner wall surface top, also a dipping treatment after developing solution 6 forcibly same predetermined number plurality of suction drainage thereunder for draining port 27 ..., development liquid 6 and a temperature control flow passage 22 is provided as an annular temperature adjusting mechanism for supplying circulating hot water or the like so that does not cause uneven development kept at a constant temperature, the lower is its lower side outwardly inclined surface 23 is formed.

【0026】又、第二の容器15の内側下部には、第一の容器14の真空吸引口20に対して液密にシールする同じくシリコンゴム製のリップ型の上シール18が環状に設けられ、該上シール18は上バックアップリング部19により第二の容器15に固定されている。 [0026] Also, inside the lower portion of the second container 15, also made of silicon rubber lip type upper seal 18 is liquid-tightly sealed against the vacuum suction port 20 of the first container 14 is provided in annular , upper seal 18 is fixed to the second container 15 by the upper back-up ring 19.

【0027】更に、ウエハチャック12の下側には、洗浄液等の付着した第一の容器14を迅速に乾燥するために所定数の多数の乾燥ノズル38,38…が設けられて該乾燥ノズル38,38…から吹出した乾燥気体が図3 Furthermore, on the lower side of the wafer chuck 12, a number of a predetermined number of drying nozzles 38, 38 ... are provided in order to quickly dry the first container 14 adhering the cleaning solvent the drying nozzle 38 , dry gas blown from 38 ... Figure 3
に示す様に、第一の容器14の上面に吹きつけられるようされている。 As shown in, and is to be blown to the upper surface of the first container 14.

【0028】上述構成において、先ず、図3に示す様に、図示しない搬送装置によりウエハ5をウエハチャック12に載置して吸着保持する。 [0028] In the above configuration, first, as shown in FIG. 3, by placing the wafer 5 by a not shown transport device to the wafer chuck 12 attracts and holds.

【0029】この時、第一の容器14と第二の容器15 [0029] At this time, the first container 14 second container 15
は当該図3に図示する様に共に最下位の位置にあって通常はこの状態に位置している。 Normally located in this state be in both the lowermost position as depicted in the Figure 3.

【0030】次に、図4に示す様に、主エアシリンダ3 [0030] Next, as shown in FIG. 4, the main air cylinder 3
2が作動してそのロッド33を伸長させ、該ロッド33 2 is extended to the rod 33 operates, the rod 33
の先端に取り付けられた昇降金具34を介して第二の容器15を上死点まで上昇させると同時に、第一の容器1 At the same time a second container 15 is raised to the top dead center through the lift bracket 34 attached to the tip, the first container 1
4を昇降金具34に取り付け固定されて作動していない副エアシリンダ35を介して該第一の容器14の下シール13がウエハ5の裏面より僅かに低い設定位置に達するまで上昇させる。 4 through the auxiliary air cylinder 35 is not operating is fixedly attached to the lift bracket 34 is raised to lower seal 13 of the first container 14 reaches a slightly lower set position from the back surface of the wafer 5.

【0031】次いで、その状態から図1に示す様に、副エアシリンダ35が伸長作動するとロッド36が随伴して伸長し、第一の容器14が更に上昇する。 [0031] Then, as shown from the state in FIG. 1, the auxiliary air cylinder 35 is extended actuated extending rods 36 are associated, the first container 14 is further increased.

【0032】そこで、図2に示す様に、該第一の容器1 [0032] Therefore, as shown in FIG. 2, said first vessel 1
4が上昇すると、その下シール13がウエハ5の裏面に下側から当接し、真空吸引接続口17からの排気によりウエハ5を真空吸引してウエハ5と第一の容器14を液密にシールする。 When 4 is raised, in contact from below lower seal 13 that is on the rear surface of the wafer 5, the seal between the wafer 5 and the wafer 5 by vacuum suction by the exhaust from the vacuum suction connecting port 17 of the first container 14 in a liquid-tight manner to.

【0033】更に、ひき続いて第一の容器14が上昇すると、該第一の容器14の真空吸引口20の周辺部と上シール18が当接して真空吸引接続口17を介しての真空吸引により第二の容器15と第一の容器14の真空吸引口20とを液密にシールする。 Furthermore, pulling subsequently the first container 14 is raised, the vacuum suction through the vacuum suction connection opening 17 periphery and the upper seal 18 of the vacuum suction port 20 of the first container 14 is in contact with sealed in a liquid-tight manner and the second container 15 and a vacuum suction port 20 of the first container 14 by.

【0034】そこで、上述のようにウエハ5と第一の容器14、該第一の容器14と第二の容器15とを液密にシールした状態に保ち、該第二の容器15の吐出口21 [0034] Therefore, keeps the wafer 5 and the first container 14, and said first container 14 and second container 15 sealed in liquid-tight as described above, the discharge port of the second container 15 21
から温水等により保温された現像液6を第二の容器15 The developer 6 which is kept warm by the hot water or the like from the second container 15
の内側全周より第一の容器14内に均一に所定量吐出させ、ウエハ5上に均一に液盛り状態にさせ、図1に示す様に、ウエハ5を該現像液6中に浸漬状態にして現像を開始する。 The inner whole periphery uniformly by a predetermined amount discharged to the first container 14 from, is uniformly puddle state on the wafer 5, as shown in FIG. 1, the wafer 5 in the immersion state in the developing solution 6 Te to start developing.

【0035】この間、副エアシリンダ35を伸長状態に付勢して上述液密シール状態を保持し現像を続行する。 [0035] During this time, it urges the sub air cylinder 35 in an extended state retaining the aforementioned liquid-tight seal state to continue the development.

【0036】而して、所定時間浸漬状態で現像後、該副エアシリンダ35の作動を停止させて縮少すると、そのロッド36が縮少して第一の容器14が下降し、図3に示す様に、上シール18で液密にシールされていた第二の容器15と該第一の容器14を解離し、現像液6をウエハ5の上面からのオーバーフローを介しての自然落下により、又、該第一の容器14の傾斜面23を介して第一の容器14の内側外周部に向って流下し排液管28により排液する。 [0036] In Thus, after the development at a given time immersion state, it stops the operation of the sub air cylinder 35 is small condensation, in its rod 36 is first container 14 descends reduced slightly, shown in FIG. 3 as dissociates the second container 15 and said first container 14 that was liquid-tightly sealed by the upper seal 18, by gravity flow of the developer 6 via an overflow from the upper surface of the wafer 5, and , draining by the draining pipe 28 flows down toward the inner peripheral portion of the first container 14 via the inclined surface 23 of the first container 14.

【0037】この場合、第二の容器15と該第一の容器14の傾斜面23間には排液に際し充分な開口面積が形成されるので、排液速度を相当に速く出来、又、排液の流下する方向が傾斜面23を介して第一の容器14の外周部に向うものであるため、モータ30側に流されることがなく、該モータ30に排液がかかる可能性は全くない。 [0037] In this case, since a sufficient opening area upon drainage Between the inclined surfaces 23 of the second container 15 and said first container 14 is formed, can considerably increase the drainage rate, also discharge since the direction of stream of liquid is one that toward the outer peripheral portion of the first container 14 via the inclined surface 23, without flowing to the motor 30 side, drained to the motor 30 is no possibility that such .

【0038】更に、ロッド36が縮少し、第一の容器1 [0038] Further, the rod 36 is reduced a little, the first container 1
4が猶下降すると、図4に示す様に、ウエハ5はウエハチャック12に接近して載置される状態であるが、下シール13により液密にシールされていたウエハ5は第一の容器14とは切り離される。 When 4 is still lowered, as shown in FIG. 4, although the wafer 5 is a state to be placed in close proximity to the wafer chuck 12, first container wafer 5 which has been sealed liquid-tight by the lower seal 13 14 and is disconnected.

【0039】この状態で、モータ30を作動させ、該ウエハ5を高速回転することによりウエハ5上に残存する現像液6を遠心力により振り切ると同時に、図示しないリンスノズルよりリンス液を該ウエハ5上に放出し、現像作用の停止、及び、ウエハ5表面のリンスを行う。 [0039] In this state, by operating the motor 30, and at the same time the developer 6 remaining on the wafer 5 by the wafer 5 rotates at a high speed to spin off by centrifugal force, the wafer rinse solution from the rinse nozzle (not shown) 5 released on, stop the development action, and performs the rinsing of the wafer 5 surface.

【0040】このプロセスで現像液6の流下分とリンス液は振り切られ、傾斜面23に衝突して下方へ反射して落下する。 The falling-minute and rinse liquid developer 6 in this process is spun off, and collide falls reflected downward on the inclined surface 23.

【0041】而して、洗浄液流入口25からリンス液を供給させ、洗浄ノズル26からウエハ5の外周部に向けて流出させ、該ウエハ5の裏面に付着した現像液6等をも洗浄すると共に排気口24から排気を行う。 [0041] In Thus, from the cleaning solution inlet 25 to supply the rinsing liquid from the cleaning nozzle 26 is flow out toward the outer peripheral portion of the wafer 5, with also to clean the developer 6 or the like attached to the rear surface of the wafer 5 carry out the exhaust from the exhaust port 24.

【0042】尚、ウエハ5の回転により振り切られる現像液6やリンス液、そして、ウエハ5の裏面に対する洗浄液等は、第二の容器15の内側に設けられた傾斜面2 [0042] Incidentally, the developer 6 and the rinsing liquid is shaken off by the rotation of the wafer 5 and the cleaning liquid or the like against the back surface of the wafer 5, the inclined surfaces provided inside the second container 15 2
3に当って下方へと反射落下し、又、排気口24からは排気が行われるので、第二の容器15と第一の容器14 Reflected falls downwards hitting the 3, also the exhaust is performed through the exhaust port 24, second container 15 and first container 14
との傾斜面23,23間の開口部分には、当該図4に示す様に、上方から斜め下方へ向う排気流24aが形成されるため、リンス液等の飛散ミストがウエハ5の面方向へ向うことを防止することが出来ることから該ウエハ5 The opening portion between the inclined surfaces 23, 23 and, as shown in the figure 4, since the exhaust stream 24a toward the upper diagonally downward are formed, scattered mist of the rinse liquid and the like in the surface direction of the wafer 5 the wafer 5 from the fact that it is possible to prevent the other side
への再付着を防止する。 To prevent the re-attachment to.

【0043】上述リンス液、及び、ウエハ5の裏面洗浄が終了した後も一定時間該ウエハ5を回転してウエハ5 The above rinsing liquid, and the wafer 5 after the back surface cleaning of the wafer 5 has been completed be rotated for a predetermined time the wafer 5
を乾燥させる。 It is dried.

【0044】そして、排気流24aを利用して、第一の容器14の上面等に付着したリンス液等を自然乾燥させる。 [0044] Then, by using the exhaust flow 24a, is air dried rinsing liquid or the like attached to the upper surface or the like of the first container 14.

【0045】而して、乾燥終了後は主エアシリンダ32 [0045] In Thus, after the completion of the drying is the main air cylinder 32
の作動を停止し、ロッド33を縮少させて収納容器37 Stop operation, the container 37 by scaled down rod 33
を下降させ、図3に示す様に、初期の位置姿勢に復帰させる。 The lowered, as shown in FIG. 3, to return to the initial position and orientation.

【0046】尚、この発明の実施態様は上述実施例に限るものでないことは勿論であり、例えば、第一の容器1 [0046] Incidentally, embodiments of the present invention is not limited to the above examples of course, for example, the first container 1
4と第二の容器15を液密にシールするべく、上述実施例では上シール18を該第二の容器15に設けたが、該上シール18を第一の容器14側に設け、第二の容器1 4 and in order to seal the second container 15 in a liquid-tight manner, is provided with the upper seal 18 in said second container 15 in the above embodiment, provided upper seal 18 to the first container 14 side, the second of the container 1
5の下面を平面に形成しても良い等種々の態様が採用可能である。 Good like various embodiments be a lower surface formed in the plane of the 5 can be adopted.

【0047】但し、当該態様では第一の容器14の排液が流下する部分に上シール18を設けるので排液性能が低下するのは避け難く、したがって、前述実施例のように上シール18は第二の容器15に設けるのが望ましい。 [0047] However, in this embodiment hardly Avoid drainage performance is lowered because providing the upper seal 18 in a portion drainage first container 14 flows down, therefore, the upper seal 18 as described above in Example desirably provided in the second container 15.

【0048】又、収納容器37を昇降する手段についても、前述実施例のようにエアシリンダ使用に限定されるものではなく、昇降出来る機構のものであれば、他のどのような手段を用いても構わない。 [0048] Further, for the means for lifting the container 37, is not limited to the air cylinder used as the foregoing embodiments, as long as the lift can mechanism, using other any means it may be.

【0049】そして、現像液6の排液方式としては、前述自然落下によるものだけではなく、例えば、第二の容器15の吸引排液口27より現像終了後に強制的に負圧式に吸引して排液しても良い。 [0049] Then, as the drainage system of the developer 6, not only due to the aforementioned free fall, for example, forcibly sucked into the vacuum type after completion of development the suction drainage port 27 of the second container 15 it may be drained.

【0050】かかる方式によれば、現像液6をほぼ全て回収することが可能であり、リンス液の混入がない純粋な現像液6を回収して再利用することも出来る。 [0050] According to such a method, it is possible to almost all recovered developer 6, it can also be recovered and reused pure developer 6 is not mixed in the rinsing liquid.

【0051】更に、第一の容器14を排気流24aを利用して自然乾燥させるに際し、乾燥ノズル38を併用し、例えば、窒素(N 2 )等の気体を図3の矢印38a [0051] Further, when to be naturally dried using exhaust stream 24a to the first container 14, in combination with the drying nozzle 38, for example, nitrogen (N 2) gas arrow 38a in FIG. 3, such as
で示す様に、該第一の容器14の上面方向へ強制的に噴出させることにより、より速やかに該第一の容器14を乾燥させることが出来る。 As shown in, by forcibly ejecting the upper surface direction of the first container 14, more quickly it is possible to dry the said first container 14.

【0052】尚、現像速度は先述した如く温度依存性が高く、したがって、現像中での温度変化は現像速度の変化を介して現像むらの原因になるので該温度変化を防ぐのに、前述実施例のように、熱容量が大きく、現像液6 [0052] The developing rate is high temperature dependency as described previously, therefore, to temperature change in the developer avoid temperature changes because cause uneven development via changes in development rate, above embodiment as an example, the heat capacity is large, the developer 6
に対する熱伝導を支配する第二の容器15を利用すれば、温調の効果は向上する。 By using the second container 15 governing heat conduction for the effect of temperature control is improved.

【0053】又、前述実施例では第二の容器15と第一の容器14とを上シール18を真空吸引することにより液密に接触シールさせているが、該第二の容器15の重量が充分な場合には、上シール18を、例えば、Oリングとし負圧吸引せずに機械的に液密に接触させることも可能である。 [0053] Also, in the foregoing embodiment are in contact sealed liquid-tight by vacuum suction the upper seal 18 and second container 15 and first container 14, the weight of the second container 15 is If sufficient, the upper seal 18, for example, it is also possible to mechanically contact in a liquid-tight manner by an O-ring without negative pressure suction.

【0054】上述実施例では浸漬式の液処理装置に適用した態様について説明したが、被処理基板の一方側面の全面が処理液により一様に被着される態様であればいかなる装置にも適用出来、例えば、コーター、即ち、フォトレジスト膜塗布装置に適用しても良い。 [0054] The application in the above description, embodiments have been described manner is applied to immersion liquid processing apparatus, to any apparatus as long as aspects entire first side surface of the substrate is uniformly deposited by the treatment liquid can, for example, coaters, i.e., may be applied to a photoresist film coating apparatus.

【0055】 [0055]

【発明の効果】以上、この発明によれば、基本的にウエハ等被処理基板をクリーンで、処理むらをなくして所定に処理することが出来、製品に対する信頼性、及び、スループット性の秀れた処理を行うことが出来る優れた効果が奏される。 Effect of the Invention] According to the present invention, basically clean the wafer such as a substrate to be processed, eliminating the processing unevenness can be processed to a predetermined, reliability of products, and, Re Xiu throughput of processing is excellent effect that can be done to be achieved.

【0056】而して、ドーナツ状の収納容器の上下の同芯的配列の第一と第二の容器により被処理基板が支持回転機構を介して浸漬式にセットされることにより処理むら等を生じない効果があり、処理後は該被処理基板と第一と第二の容器が離反されてそれらの間隙部から処理液が迅速に流下排液される効果もあり、又、処理済の処理液や洗浄液が回転機構を介して振り切れる時第二の容器の外向傾斜面から回転による遠心力で飛散されて衝突し、下側に反射して落下するため、中心部の支持回転機構の駆動部等にかからないという優れた効果が奏される。 [0056] In Thus, the first processing unevenness by the substrate to be processed by the second container is set in the immersion through a support rotating mechanism concentric arrangement of the upper and lower toroidal container is effective not occur, after treatment is also effective in the treatment liquid from their gap 該被 substrate and the first and the second container are separated is rapidly falling drained, and the processing of the processed since the liquid and the cleaning liquid is scattered by centrifugal force due to the rotation from the outwardly inclined surface of the second container when Furikireru via a rotating mechanism collide, fall and reflected on the lower side, the driving of the supporting and rotating mechanism of the center portion excellent effect that not applied to the part or the like is achieved.

【0057】そして、洗浄等の際に発生するミストは同様に回転されると共に反射落下し排気口から排気されるため被処理基板にはね返って付着することがないという効果がある。 [0057] Then, mist generated upon cleaning or the like has the effect of never adhere rebounded substrate to be processed because it is exhausted from the reflective fallen outlet while being rotated in the same manner.

【0058】又、ウエハの外周方向から所定温度の処理液を供給するようにしたので、ウエハに衝撃を与えないで処理液を供給出来、均一処理が出来る効果もある。 [0058] In addition, since the the outer circumferential direction of the wafer to supply the processing solution at a predetermined temperature, not to apply a shock to the wafer can supply the process liquid, it is also uniform treatment can be effective.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】全体概略部分断面模式構造図である。 1 is an overall schematic partial cross-sectional schematic structural view.

【図2】同、A部の拡大断面図である。 [2] the same, is an enlarged sectional view of the A portion.

【図3】同、原位置状態の部分断面模式側面図である。 [3] the is a partial cross-sectional schematic side view of the original position state.

【図4】同、動作中途を示す部分断面模式側面図である。 [4] the is a partial cross-sectional schematic side view showing an operation halfway.

【図5】従来技術の液処理装置を示す部分断面模式図である。 5 is a partial cross-sectional schematic view showing a prior art liquid processing apparatus.

【符号の説明】 DESCRIPTION OF SYMBOLS

5 ウエハ 6 現像液 12 ウエハチャック 13 下シール 14 第一の容器 15 第二の容器 16 下バックアップリング 17 真空吸引接続口 18 上シール 10 上バックアップリング 20 真空吸引口 21 液吐出口(液給排機構) 22 温調水流路 23 傾斜面 24 排気口(排気手段) 25 洗浄液流入口 26 裏面洗浄ノズル 27 吸引排液口(液給排機構) 28 排液管 29 仕切板 30 モータ 31 固定部 32 主エアシリンダ 33 ロッド 34 昇降金具 35 副エアシリンダ 36 ロッド 37 収納容器 38 乾燥ノズル 39 昇降駆動機構 5 wafer 6 developer 12 wafer chuck 13 lower seal 14 first container 15 second container 16 under the back-up ring 17 vacuum suction connecting port 18 above the seal 10 on the backup ring 20 vacuum port 21 fluid discharge port (liquid supply and discharge mechanism ) 22 temperature control water flow path 23 inclined surface 24 an exhaust port (exhaust means) 25 cleaning liquid inlet 26 back surface cleaning nozzle 27 sucking drain port (liquid supply and discharge mechanism) 28 drain pipe 29 partition plate 30 motor 31 fixed part 32 main air cylinder 33 rod 34 lift bracket 35 sub air cylinder 36 rod 37 housing container 38 drying nozzle 39 lift drive mechanism

Claims (1)

    (57)【特許請求の範囲】 (57) [the claims]
  1. 【請求項1】 被処理基板(5)に対する収納容器(3 1. A container for the processed substrate (5) (3
    7)が底面部と側壁部とを有し該被処理基板(5) 7) and a bottom portion and a side wall behind the target substrate (5)
    面周辺部と接触して収納容器(37)の底面部を成す第一の容器(14)と、該被処理基板(5)の径より大きな内径を有し、該第一の容器(14)の上面周縁部と接触して該収納容器(37)の側壁部を成す第二の容器 In contact with the surface peripheral portion and the first container (14) forming the bottom portion of the storage container (37) has an inner diameter larger than the diameter of該被substrate (5), said first container (14 a second container in contact with the top rim portion forming a side wall of the container (37) in)
    (15)と、該第二の容器(15)の内周部に設けられた複数の処理液(6)の吐出口(21)と、該処理液 And (15), a plurality of processing solution provided in the inner peripheral portion of said second container (15) discharge opening (6) and (21), the process solution
    (6)の吐出口(21)から上記第一の容器(14)と第二の容器(15)から成る収納容器(37)内に処理液(6)を供給する処理液供給機構と、 処理液(6) From the discharge port (21) and said first container (14) and the second container consists of (15) storage container (37) processing solution supplying treatment liquid (6) in the supply mechanism (6), the processing solution (6)
    吐出口(21)から吐出される処理液(6)の温度を制御する上記第二の容器(15)に設けられた温度調整機構(22)とを備え、上記収納容器内(37)に所定の温度の処理液(6)を被処理基板(5)の表面に衝撃を与えることなく供給するようにしたことを特徴とする浸漬式の液処理装置。 And a discharge port temperature adjusting mechanism provided in the second container for controlling the temperature (15) of the processing liquid discharged from (21) (6) (22), into the storage container (37) predetermined temperature of the treatment liquid (6) immersion of the liquid processing apparatus is characterized in that so as to supply without impacting the surface of the substrate (5).
JP35543792A 1992-12-21 1992-12-21 Immersion of the liquid processing apparatus Expired - Lifetime JP2520833B2 (en)

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Application Number Priority Date Filing Date Title
JP35543792A JP2520833B2 (en) 1992-12-21 1992-12-21 Immersion of the liquid processing apparatus

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JPH07132262A JPH07132262A (en) 1995-05-23
JP2520833B2 true JP2520833B2 (en) 1996-07-31

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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KR100585476B1 (en) 2002-11-12 2006-06-07 에이에스엠엘 네델란즈 비.브이. Lithographic Apparatus and Device Manufacturing Method
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