WO2004053951A1 - Exposure method, exposure apparatus and method for manufacturing device - Google Patents

Exposure method, exposure apparatus and method for manufacturing device

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Publication number
WO2004053951A1
WO2004053951A1 PCT/JP2003/015408 JP0315408W WO2004053951A1 WO 2004053951 A1 WO2004053951 A1 WO 2004053951A1 JP 0315408 W JP0315408 W JP 0315408W WO 2004053951 A1 WO2004053951 A1 WO 2004053951A1
Authority
WO
Grant status
Application
Patent type
Prior art keywords
substrate
exposure
liquid
system
optical
Prior art date
Application number
PCT/JP2003/015408
Other languages
French (fr)
Japanese (ja)
Inventor
Nobutaka Magome
Masahiro Nei
Shigeru Hirukawa
Naoyuki Kobayashi
Soichi Owa
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece
    • G03F7/70341Immersion
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70425Imaging strategies, e.g. for increasing throughput, printing product fields larger than the image field, compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching, double patterning
    • G03F7/70466Multiple exposures, e.g. combination of fine and coarse exposures, double patterning, multiple exposures for printing a single feature, mix-and-match
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/708Construction of apparatus, e.g. environment, hygiene aspects or materials
    • G03F7/70991Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus, shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate, utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids, vacuum

Abstract

When a substrate (P) is exposed to light through a projection optical system, a liquid (50) is supplied between the projection optical system and the substrate (P). Accordingly, a pattern forming area (AR1) of the substrate (P) is exposed to light through a projection optical system (PL) and the liquid, and an edge area (AR2) of the substrate (P) is exposed to light through a projection optical system (PL2) but not through the liquid. Exposure with a large depth of focus can be realized while preventing the liquid from flowing out of the substrate.

Description

Specification exposure method and an exposure apparatus and device manufacturing method art

The present invention relates to an exposure method, and device manufacturing method using the exposure method and via a projection optical system image plane side of the projection optical system in a state filled with locally liquid to expose a pattern on a substrate . BACKGROUND

Semiconductor devices and liquid crystal display devices, to transfer a pattern formed on a mask onto a photosensitive substrate, is manufactured by a so-called photolithography technique. An exposure apparatus used in about the photolithographic house, and a substrate stage for supporting the mask stage and the substrate supporting the mask, the pattern of the mask projection optical system while moving Exiled following the mask stage and the substrate stage Recently c is transferred onto the substrate via, more further such that the high resolution of the projection optical system in order to cope with high integration of the device pattern is desired. Resolution of the projection optical system becomes higher as a short exposure wavelength to be used is Ruhodo, also the numerical aperture of the projection optical system large. Therefore, the exposure wavelength which is used in the exposure apparatus, is shortened year by year wavelength has increased numerical aperture of projection optical systems. The mainstream exposure wavelength currently is the 2 4 8 nm of K r F excimer laser, 1 9 3 nm of A r F excimer laser further to shorter wavelength are also being commercialized. Further, when exposure is performed, similarly to the resolution depth of focus (DOF) is also important. The resolution R, and the depth of focus <5 is represented by the formula below.

R = k 1 ■ λ / Ν Α ... (1)

5 two fighters k 2 ■ λ / Ν A 2 ... (2)

Here, lambda is the exposure wavelength, New Alpha is the numerical aperture of the projection optical system, k 1, k 2 represent the process coefficients. (1) and (2), in order to enhance the resolution R, then shorten the exposure wavelength lambda, an increase in the numerical aperture of New Alpha, narrow <made it can be seen the depth of focus (5. The depth of focus (5 is too narrowed, it is difficult Rukoto to match the substrate surface with respect to the image plane of the projection optical system, there is a possibility that the margin during the exposure operation is insufficient. Therefore, by substantially shortening the exposure wavelength, as a method and widening the depth of focus, for example, WO

9 9/4 9 5 0 4 No. immersion method disclosed in Japanese have been proposed. This liquid immersion method fills the space between the lower and the substrate surface of the projection optical system with a liquid such as water or an organic solvent, the wavelength of the exposure light in the liquid, refraction 1 / n (n in the air in the liquid Usually 1.2 to 1. by utilizing the fact that on the order of 6) with improved resolution by a factor, is intended to refer to enlarge the depth of focus by approximately n times. However, the above conventional art there are problems described below. The above prior art is locally configured filled with liquid between the lower surface and the substrate an image plane side of the projection projection optical system (wafer), in the case of exposing a Shodzuto region near the center of the substrate of the liquid outflow to the outside of the substrate does not occur. However, for example, as schematically shown in FIG. 1 5, the peripheral region (edge ​​region) E of the substrate P by moving the projection area 1 0 0 of the projection optical system, you'll expose the edge area E of the substrate P When the liquid flows out to the outside of the substrate P. If left the outflow liquid this results in a variation of the environment in which the substrate P is placed (such as humidity), the interferometer optical path and various optical that measures positional information of the substrate stage for holding a substrate desired path, such as causing a change in the refractive index of the detection light on the optical path of the detector evening

- it may not be obtained a down transfer accuracy occurs. Furthermore, Disclosure of the Invention The disadvantages of such causes 請 beauty such as mechanical parts around the substrate stage that supports a substrate P by spilled liquids also raw o invention was made in view of such circumstances in the case of liquid immersion exposure process the substrate in a state filled with liquid between the projection optical system and the substrate is also an exposure method capable of preventing the outflow of the liquid to the outside of the substrate, and if the substrate for liquid immersion exposure process an object is also to provide an exposure apparatus which executes Bruno to edge regions of the base plate, 'data Ichin transfer can exposure method, and device manufacturing method as well as their exposure method using these exposure methods. According to a first aspect of the present invention, there is provided an exposure method for exposing a substrate (P) by transferring an image of a predetermined pattern on a base plate (P) by the projection optical system (PL), the projection optical system supplying a liquid (50) between the (PL) and the substrate (P), the substrate (P) on the first region (AR 1) is exposed through a liquid (50), the first region (AR 1 ) exposure method for exposing without supplying a second region on a different substrate (P) (the AR 2), the liquid (50) is provided with. Further, according to a second aspect of the present invention, there in using the projection optical system (PL), a method of exposing a substrate (P) having a first region (AR 1) and a second region (AR 2) Te, supplying a liquid (50) between the projection optical system and (PL) and the substrate (P), and exposes a substrate (P) through a liquid (50) to expose the first region (AR 1) and exposure condition, the exposure method of exposing condition is different for exposing a second area (AR 2) is provided. According to the present invention, for example, when the pattern forming region near the substrate center the Ejji near region of the substrate and the first region and the second region, that is exposed through the projection optical system and the second region without liquid, it is possible to suppress the outflow of the substrate outside the liquid. Then, by exposing the first, respectively the different exposure conditions in the second region, it can be satisfactorily pattern transfer for the second region. Therefore, the fluctuation of the environment where the substrate is suppressed, can be suppressed the occurrence of the substrate stage around the machine components ivy inconveniences have the like 請 beauty is generated for supporting the substrate. Moreover it is possible to suppress the occurrence of inconvenience substrate against the polishing surface of the CMP apparatus in CMP (chemical mechanical polishing) process is a post-process can not be satisfactorily polished partial contact, the device having a high pattern accuracy it is possible to produce a scan. 'The exposure method of the present invention, than when exposing the first region, it is preferable to reduce the numerical aperture of the projection optical system to be used during the exposure of the second region. Further, it is preferable to pre-Symbol second region is exposed by two-beam interference method. Further, wherein the second area, it is preferable that the line pattern is to project an image of the formed lines 'and' space Pas evening Ichin at a predetermined pitch. W 200

Further, in the exposure method of the present invention, a first pattern used for the exposure of the first region may differ from the second pattern used for exposure of the second region is preferred. The first region is exposed while moving the substrate and the first pattern, the second region is preferably exposed while stationary and the substrate and the second pattern. Said first region, said first pattern and said substrate is exposed while moving, the second region, while still the second pattern may be exposed while moving the substrate. Further, in the exposure method of the present invention, it is preferably formed on the same mask and the first pattern and the second pattern. The first pattern is formed on a mask, the second pattern on the mask stage for holding the mask, and the mask may be formed on a substrate which is fixed in the release position. In the exposure method of the present invention, in the case of exposing the second region and the time of exposure of the first region is different it is preferred that a distance between the substrate and the projection optical system. Further, in the case of exposing the second region and when exposing the pre Symbol first region such that said spacing projection optical system and said substrate is substantially the same, is formed through the projection optical system it may be carried out adjusting the position of that image plane. Furthermore, in the present invention, after the exposure of the second region is completed, it is preferable to perform the exposure of the first region. According to a third aspect of the present invention, the projection light ^: system with (PL), there a method of exposing a substrate (P) having a first region (AR 1) and a second region (AR 2) Te, wherein the projection optical science system and (PL) and supplying the liquid (50) between the substrate (P), that exposes a substrate (P) through a liquid (50), the substrate (P) only a region excluding Edzuji portion of top (AR 2) is provided an exposure method is an exposure. Under unnecessary conditions for exposing the edge portion of the substrate P, there is no need to move the edge of the substrate to the liquid immersion area between the projection optical system and the substrate. For example, and by even such a pattern is formed <the edge as long as the process conditions is not performed C MP process on the substrate P,. Therefore, it is not necessary to expose the edge portion, it is not necessary to move to the liquid immersion area between the edge of the substrate the projection optical system and the board. Therefore, it is possible to prevent the outflow of the liquid to the outside of the substrate. In the present invention, a method for producing a device, comprising using the exposure method of the above aspects are provided. According to a fourth aspect of the present invention, an exposure apparatus for exposing a plurality of regions on the substrate (P) (AR 1, AR 2), the exposure light to the first region on the substrate (P) (AR 1) a first optical system for irradiating the (EL) (IL, PL), irradiated with exposure light (EL 2) in the first region (AR 1) and the second region on different substrates (P) is (AR 2) the exposure apparatus (EX) is provided and a second optical system (IL 2, PL 2). According to the present invention, it can be exposed in a first, easily to different conditions of each of the second regions on the substrate. The first optical system and depending on the arrangement of the second optical system, the first substrate, each first second region, it becomes possible to concurrently exposed by the second optical system, throughput Bok It can be improved. Further, first, according to the target exposure accuracy to be used during the exposure of the second region (pattern formation accuracy), first, it is sufficient to construct a second optical system, the exposure accuracy for example with respect to the second region relatively rough If it is allowed, such precision, the second optical system may be a simple (cheap) configuration, it is possible to suppress the equipment cost and the running cost Bok. In the exposure apparatus of the present invention, the wavelength of the exposure light used for the exposure of the first region is preferably different from the wavelength of the exposure light used for exposure of the second region. Also comprises a first movable member which is movable while holding the substrate, and a second movable member which is movable while holding the substrate having the first and second regions having the first and second regions, during exposure of the first region on the substrate held on the first movable member using the first optical system, a second substrate held by the second movable member using the second optical system exposing the regions, the after end of exposure of the first region on the substrate held on the first movable body, the first region on the substrate held by using the first optical system to the previous remarks himself second movable member it is preferable to start the exposure. Further, the second region may be any edge periphery of the substrate. The second region may be exposed by two-beam interference method. In the exposure apparatus of the present invention, the first region, the exposed through a liquid between the first optical system and said substrate, said second region, between the second optical system and the substrate it is preferably exposed without liquids. In the present invention, the device manufacturing method characterized by using the exposure apparatus of the fourth aspect (EX) is provided. According to a fifth aspect of the present invention, there is provided an exposure apparatus which exposes a substrate,

Comprising a liquid supply device (1), first station (A) and the substrate is exposed through a liquid supplied by said liquid supply system;

Second station (B) and the substrate which the liquid is not supplied is exposed; exposure apparatus equipped with is provided. In this exposure apparatus immersion exposure is performed in the first station, since the exposure without conventional liquid at the second station is carried out, for example, the substrate has a first 及 beauty second region, the first region which is exposed through the liquid in the first station, the second area can be exposed without liquid in the second station. Thus, the control according to the exposure conditions by conducting separately in two stations, complex exposure control according to the application is also possible. Further, it is sufficient to concentrate on the processing problems of the liquid (water) process with the liquid immersion exposure in one station. Exposure apparatus may further comprise a first projection optical system provided in the first station and a second projection optical system provided in the second scan Teshiyon. Further, exposure apparatus, between the first scan Teshiyon and the second station, the first and second movable body that moves alternately holding the substrate, for example, may comprise a movable stage. In this case, after the second region of the substrate is exposed in the second scan Teshiyon, the substrate is moved to the first stage Yon by the first or second movable body, a first region liquid is supplied to the first region There is exposure. Moreover, pre-alignment measurement of the substrate in the second station (AF / AL measurement, Araimento measurement or the like) can be performed, to move the substrate to the first station, the substrate on which the measurement was that I stand 置合 were made it can be immersion exposure in the first station. In this way it is possible to improve the throughput Bok taking advantage of the benefits of Tsui down stage in the immersion exposure. The alignment measurement of the substrate at the second station may be the alignment measurement shot area of ​​the substrate using a reference member provided in the movable body. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic configuration diagram der diagram 2 showing an embodiment of an exposure apparatus used for the exposure method of the present invention, the position of the tip and the liquid supply device and the liquid recovery apparatus of the projection optical system it is a view to view the relationship.

Figure 3 is a diagram showing an exemplary arrangement of supply nozzles and recovery nozzles.

Figure 4 is a diagram showing an exemplary arrangement of supply nozzles and recovery nozzles.

Figure 5 is a plan view showing a mask according to the present invention.

Figure 6 is a plan view showing a substrate according to the present invention.

FIGS. 7 (a) 及 (b) is Ru Fig illustrating a configuration example of an optical system at the time of exposure of the second region

Figure 8 is a diagram showing the arrangement on a mask stage of the glass substrate Pas evening one down for exposure of the second region is formed.

Figure 9 is a diagram showing another configuration example of the optical system at the time of exposure of the second region.

Figure 1 0 is a schematic diagram showing another embodiment of an exposure apparatus of the present invention.

Figure 1 1 is a diagram der · © showing an example of a glass substrate having a pattern for exposure of the second region is formed.

Figure 1 2 is a diagram showing another example of a glass substrate having a pattern for exposure of the second region is formed.

Figure 1 3 is a schematic diagram showing another embodiment of an exposure apparatus of the present invention.

Figure 1 4 is a Furochiya one Bok diagram showing an example of a manufacturing process of semiconductor devices. W

Figure 1 5 is a diagram for explaining a conventional problem. BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, an exposure method and device manufacturing method of the present invention will be described with reference to the drawings. Figure 1 is a schematic configuration diagram showing an embodiment of an exposure apparatus used for the exposure method of the present invention. First Embodiment

1, the exposure apparatus EX includes a mask stage MST which supports a mask M, a substrate stage PST which supports a substrate P, an illumination optical system IL which illuminates the mask M supported by the mask stage MST with exposure light EL When the projection optical system PL for projecting the exposure an image of a pattern of the illuminated mask M with the exposure light EL onto the substrate P supported by the substrate stages PST, the controller C that controls the overall operation of the exposure apparatus EX 0 and e rain and NT. In the present embodiment, exposing a pattern formed on the mask M while synchronously moving the mask M and the substrate P in each other in a different direction definitive in the scanning direction (the reverse direction) as the exposure apparatus EX to the substrate P scanning type exposure apparatus When using (so-called scanning scan Tetsu Pas) it will be described as an example. In the following description, X-axis direction synchronous movement direction (scanning direction) of the direction that matches the optical axis AX Z-axis direction, the mask M and the substrate P in the Z axis direction perpendicular to the plane of the projection optical system PL , Z-axis direction and the Y-axis direction perpendicular to the direction (non-scanning direction) is the Y-axis direction. Further, X-axis, Y-axis, and respectively a Z-axis direction, and 0 Χ, Θ Ί and direction. The term "substrate" referred to herein includes those obtained by coating the fabric with Regis Bok on a semiconductor wafer, and the term "mask" includes a reticle formed with a device pattern that is reduction projected onto the substrate. The illumination optical system IL is for illuminating the mask M supported by the mask stage MST with exposure light E Mr, exposure light source, the illuminance of the light flux radiated from the exposure light source for equalizing Ichika Optical I integrators gray evening, the exposure light from the optical I integrators gray evening

A condenser lens for condensing the EL, relay lens system, and a variable field diaphragm which sets the illumination area on the mask M Suritsu Bok shape by the exposure light EL. Illumination area constant at on the mask M is illuminated with a uniform illuminance distribution of the exposure light EL by means of the illumination optical system IL. As the exposure light EL emitted from the illumination optical system IL, for example, for example, emission lines in the ultraviolet region emitted from a mercury lamp (g-rays, h-rays, i-rays) and K r F excimer one laser light (wavelength 248 nm), such as and deep ultraviolet light (DUV light), a r F excimer laser beam (wavelength 1 93 nm) and F 2 laser beam (wavelength: 1 57 nm) vacuum ultraviolet light (VUV light) such as the Ru used. In the present embodiment, to the use of A r F excimer laser beam. The mask stage MS T is for supporting the mask M, the plane perpendicular to the optical axis AX of the projection optical system PL, i.e. be infinitesimal rotation in a two-dimensional movable and 0 Z-direction in the XY plane . The mask stage MST is driven by mask stage driving unit MS TD such as a linear motor. The mask stage driving device MS TD is controlled by the control device CO NT. Dimensional position of the mask M on the mask stage MS T, and the angle of rotation are measured in real time by the laser interferometer, measurement results are outputted to the control unit C 0 NT. Controller C 0 NT performs positioning of the mask M supported by the mask stage MS T by driving the mask stage drive apparatus MS TD based on the measurement results of the laser interferometer. Projection optical system PL is for projection exposing the substrate P with the pattern of the mask M at a predetermined projection magnification /?, Is composed of a plurality of optical elements (lenses), these optical elements as a metal member It is supported by a barrel PK. In this embodiment, the projection optical system PL is a projection magnification. 3, for example 1Z4 or 1/5 reduction system. The projection optical science system PL may be either a unity magnification system or an enlargement system. Further, the tip side of the projection optical system PL of the present embodiment (the substrate P side), the optical element (lens) 60 that are exposed from the barrel PK. The optical element 60 is provided detachably with respect to the barrel PK (exchange). The substrate stage PS T is for supporting the substrate P, the Z stage 5 1 for holding the substrate P via a substrate holder, an XY stage 5 2 which supports the Z stage 5 1, the XY stage 5 2 and a base 3 for supporting. The substrate stage PST is driven by a substrate stage-driving unit PSTD such as a Li Niamota. Operated device PSTD drive the substrate stage is controlled by the control unit CONT. By driving the Z stage 5 1, I elevational location (off O one scum position) in the Z-axis direction of the substrate P held by the Z stage 5 1, and 0 X, the position in the direction is controlled. Further, by driving the XY stearyl over di 5 2, the position in the XY direction of the substrate P (substantially parallel to the image plane position of the projection optical system PL) is controlled. That, Z stage 5 1 narrowing combined surface of the substrate P by controlling the Four Chikarasu position and inclination angle of the substrate P autofocus scheme, and Saiichi Bok Reperingu method to the projection optical system P Shino image plane , XY stage 5 2 performs positioning in the X axis direction and the Y-axis direction of the substrate P. It goes without saying that the Z stage and the XY stage may be integrally provided. Movable mirror 5 4 is provided on the substrate stage PST (Z stage 5 1). Also, the laser interferometer 5 5 is provided at a position opposed to the movement mirror 5 4. Dimensional position of the substrate P on the substrate stearyl over di- PST, and the angle of rotation are measured in real time by the laser interferometer 5 5 The result of the measurement is outputted to the controller CONT. Controller C 〇 NT performs positioning of the substrate P supported by the substrate stage PST by driving the substrate stage drive apparatus PSTD based on the measurement results of the laser interferometer 5 5. In this embodiment, as well as improve the resolution of the exposure wavelength and substantially shorter, in order to widen the depth of focus substantially, applying the liquid immersion method. Therefore, while transferring the pattern image of at least the mask M onto the substrate P, the tip surface (lower surface) 7 of the optical element (lens) 6 0 of the substrate P side surface and the projection optical system PL of the substrate P predetermined liquid 5 0 is satisfied during the. As described above, the tip side of the projection optical system PL is lens 6 0 is exposed; 'night body 5 0 is configured to contact only the lens 6 0. Thereby, corrosion or the like of the barrel PK formed of metal is prevented. Moreover, the tip surface 7 of the lens 6 0 is configured to sufficiently smaller than the barrel PK and the substrate P of the projection optical system PL, and and the liquid 5 0 as described above in contact only with the lens 6 0, Liquid 5 0 has a structure which is locally filled in the image plane side of the projection optical system PL. That is, liquid immersion portion between the projection optical system PL and the substrate P is sufficiently smaller than the substrate P. In the present embodiment, pure water is used for the liquid 5 0. Pure water, A r F not laser beam only, the bright line of ultraviolet region emitted exposure light EL, for example, from a mercury lamp (g-rays, h-rays, i-rays) and K r F excimer one laser light (wavelength 2 4 8 nm) when the 違紫 outside light (DUV light), such as, is permeable to the exposure light EL. The exposure apparatus EX includes a liquid supply unit 1 supplies a predetermined liquid 5 0 in the space 5 6 between the distal end surface (distal end surface of the lens 6 0) 7 and the substrate P of the projection optical system PL, and the space 5 6 and a liquid recovery apparatus 2 that recovers the liquid 5 0. The liquid supply apparatus 1 supplies the image plane side of the projection optical system PL be for is locally filled with liquid 5 0, evening tank, a pressure pump for accommodating a liquid 5 0, and the space 5 6 and a like temperature control equipment for adjusting the temperature of the liquid 5 0. One end of the supply pipe 3 is connected to the liquid supply apparatus 1, the supply nozzle 4 is connected to the other end of the supply pipe 3. The liquid supply apparatus 1 supplies the liquid 5 0 in the space 5 6 via the supply pipe 3 and the supply nozzles 4. Liquid recovery unit 2 is provided with such as a tank for accommodating the suction pump, the liquid 5 0 recovered. The liquid recovery unit 2 one end of the recovery tube 6 is connected, recovery nozzles 5 are connected to the other end of the recovery tube 6. Liquid recovery unit 2 recovers the liquid 5 0 space 5 6 and via the recovery nozzle 5 and the recovery pipe 6. When filled with liquid 5 0 in the space 5. 6, the control unit CONT drives the liquid supply apparatus 1, supplies the liquid 5 0 a predetermined amount per unit time for the space 5 6 via the supply pipe 3 and the supply nozzles 4 to together, to drive the liquid recovery unit 2, a liquid 5 0 given per unit amount of time via the recovery nozzle 5 and the recovery pipe 6 is recovered from the space 5 6. Thus the liquid 5 0 are arranged in a space 5 6 between the front end surface 7 and the substrate P of the projection optical system PL, and the liquid immersion portion is formed. Here, the control unit CONT, together with an arbitrarily set the liquid supply amount per unit time for space 5 6 by controlling the liquid supply apparatus 1, from the substrate P by controlling the liquid recovery apparatus 2 liquid recovery amount per unit time is arbitrarily settable. Figure 2 is a front view showing the bottom, the liquid supply apparatus 1, and the like liquid recovery device 2 of the projection optical system PL of the exposure apparatus EX. 2, lens 6 0 lowermost end of the projection optical system PL, the distal end portion 6 OA is formed by an elongated rectangular shape in the leaving Y-axis direction (non-scanning Direction) parts necessary for scanning direction . During the scanning exposure, a part of the pattern image of the mask M is projected onto the projection area of ​​the rectangle immediately below the tip portion 6 OA, with respect to the projection optical system PL, the mask M gar X direction (or + X direction) synchronously to move at a velocity V, XY stearyl - speed 3 ■ V to the substrate P via the di-5 2 + X direction (or one X-direction) (3 projection magnification) moves. Then, after the exposure to one shot Bok area, next Shodzuto area is moved to the scanning start position by Sutedzu Bing substrate P, the following steps en de -. Exposure processing for each shot Bok area scan method sequentially It takes place. In the present embodiment, and it is by flowing the liquid 5 0 urchin set to move in the same direction as that of the substrate P along the direction of movement of the substrate P.

The Z stage 5 1 suction holes 2 4 for attracting and holding the substrate P is provided. Then, each of the suction holes 2 4, are connected to the flow channel 2 5 formed inside the Z stage 5 1. Passage 2 5 connected to the suction hole 2 4 is connected to one end of the conduit 3 0 provided in the Z stage 5 1 outside. On the other hand, the other end of the conduit 3 0 is connected to the pump 3 3 a suction device via a Z scan te temporary 5 1 tank 3 1 provided outside and the valve 3 2. The tank 3 1 is provided with a discharge channel 3 1 A, so that the liquids are discharged from the predetermined amount accumulated After discharge channel 3 1 A. The liquid immersion exposure is also considered when the liquid 5 0, which outflows to the outside of the substrate P reaches the back surface side of the substrate P. Then, there is a possibility that liquid 5 0 that enters the back surface side of the substrate P flows into the suction hole 2 4 for attracting and holding the substrate P. In this case, suction holes 2 4 has a passage 2 5, line 3 0, and the tank 3 are connected 1 to the pump 3 3 as the suction device via a for sucking and holding the board P, the valve since 3 is carried out second opening and the driving of the pump 3 3, it is possible to collect the liquid 5 0 that has flowed into the suction hole 2 4 to the tank 3 1 through the passage 2 5 and line 3 0. Figure 3 is a distal end portion 6 OA of the lens 6 0 of the projection optical system PL, and the liquid 5 0 supply nozzle 4 for supplying the X-axis direction (4A-4C), the recovery nozzles 5 (5 eight which recovers the liquid 50 is a diagram showing the positional relationship between the 5 B). 3, the distal end portion 6 OA of the shape of the lens 60 has a rectangular shape elongated in the Y-axis direction, so as to sandwich the distal end portion 60 A of the lens 60 of projection optical system PL in the X-axis direction, + X direction side three supply nozzles 4 A~4 C are placed one X-direction of the two on the side of the recovery nozzles 5 a, 5 B is arranged. The supply nozzle 4 A~4C are connected to the liquid supply apparatus 1 via the supply pipe 3, the recovery nozzles 5 A, 5 B are connected via the recovery pipe 4 to the liquid recovery apparatus 2. Further, the position rotated approximately 1 8 0 ° with respect to the distal end portion 6 OA center the supply nozzle 4A~4C and recovery nozzles 5 A, 5 B, a supply nozzle 8A-8C, the recovery nozzles 9 A, 9 B door is located. Here, the nozzle row 4 A~4C, 9 A and 9 B and the nozzle row 8 A~8C, 5 A and 5 B are arranged opposite, facing distance between the supply nozzle recovery nozzles (e.g. 4 A If the interval of 8 a) is wider than the width of the scanning direction of the projection area which is defined below the front end portion 60 a of the lens 60 smaller than the diameter of the substrate P. Therefore, when exposing the shot Bok region near the outer periphery of the substrate P, and the liquid immersion area protrudes outside Ejji Yori substrate P, because the liquid is prevented from leaking to the outside of the substrate P, supplied opposed arbitrary desired that the spacing of the nozzles and the recovery nozzles are close as possible to the width of the scanning direction of the projection area. A supply nozzle 4A~4C and the recovery nozzles 9 A, 9 B are arranged alternately in the Y axis direction, the supply nozzles 8 A ~ 8C and the recovery nozzles 5 A, 5 B are arranged alternately in the Y-axis direction, supply nozzle 8 A~8C are connected to the liquid supply apparatus 1 via the supply pipe 1 0, recovery nozzle 9A, 9 B are connected to the liquid recovery apparatus 2 via the recovery pipe 1 1. Liquid supply from the nozzle, as shown in o Figure 4 gas portion is Ru performed so as not to occur between the projection optical system PL and the substrate P, on each of the Y-axis direction both sides of the distal end portion 6 OA It may be provided supply nozzles 1 3, 1 4 and the recovery nozzles 1 5, 1 6. The supply nozzles and recovery nozzles, even move during movement of the non-scanning direction of the substrate P at the time of step movement (Y-axis direction), stable supply of the liquid 50 between the projection optical system PL and the substrate P can do. The shape of the nozzle described above is not particularly limited, for example, the distal end portion 6 OA of the long sides may be performed supplying or recovering the liquid 5 0 two pairs nozzles. In this case, + X direction, or - in order to be able to perform supply and recovery of the liquid 5 0 from either direction of the X-direction, are arranged side by side vertically with supply nozzles and the recovery nozzles it may be. Figure 5 is a plan view of a mask M according to the present embodiment. 5, the device pattern (first pattern) for the mask M is to form a device 4 1 and the first pattern formation area MA 1 formed is a line line pattern is formed at a predetermined pitch ■ § command ' space pattern are (second pattern) 4 2 and a second pattern formation region MA 2 formed. Device pattern 4 1 is transferred to the first region AR 1 on the substrate P to be described later, the line 'and.-Space pattern (L / S pattern) 4 2, first on different substrate P from the first region AR 1 where it will be transferred to the second area AR 2. 6 is a plan view of the substrate. P. Device pattern 4 1 formed in the mask M in the first region AR 1 is transferred substantially a path evening Ichin forming area set near the center of the circular substrate P, near the edge of the substrate P the second region AR 2 the L / S pattern formed on the mask M 4 2 is adapted to be transferred is an area. Further, the first area AR 1 is set a plurality of shot Bok region SH. Incidentally, the boundary between the first region AR 1 and the second region AR 2 is not limited to FIG. 6, the acceleration distance and the deceleration distance before and after the Ru scanning exposure of each shot Bok area or are determined depending on the range of the liquid immersion area, Bayoi. Next, the Bataan mask M will be described the procedures for exposing the substrate P by using the exposure apparatus EX described above. The mask M is loaded on the mask stage MS Ding, when the substrate P is loaded on the substrate stage PST, the control unit C 0 NT drives the liquid supply unit 1 and the liquid recovery apparatus 2, the supply and the liquid 5 0 the space 5 6 by the collecting forms the immersion portion of the liquid 5 0. Then, the control unit CONT, the synchronous movement article al the mask M and the substrate P, the irradiation of the first pattern formation region M 1 of the mask M by the illumination optical system IL with the exposure light EL facie showing an image of the device pattern 41 the through the projection optical system PL and the liquid 50 are sequentially projected on each shot Bok region SH in the first region AR 1 on the substrate P. Here, during the exposure of the first region AR 1 of the near with the center of the substrate P, the liquid 50 supplied from the liquid supply device 1 is recovered by the liquid recovery apparatus 2, and the projection optical system PL and the substrate P It does not flow out to the outside of the substrate P so immersion area between is not applied to the edge of the base plate P. Next, the controller CON T is the mask M of the device pattern 41 and Masques a L / S pattern 42 kicked set in different positions in order to expose the second region AR 2 of the substrate P stage MS T and the substrate stage PST the drives to position the mask M and the substrate P in a predetermined position. Before or after the positioning operation, the control device CO NT stops the supply and recovery operations of the liquid 50 by the liquid supply apparatus 1 and the liquid recovery apparatus. Ie, the control unit CONT, the second region AR 2, without the liquid 50, prepares to exposure through the projection optical system PL. Here, the control device CO NT includes a condition when the illumination condition of the exposure light EL that against the mask M when exposing process the second region AR 2 (exposure condition), where the first area AR 1 and an exposure process set to different conditions. For example, to change the aperture of the illumination optical system IL, for example, change the lighting conditions for the mask M from the normal illumination to oblique illumination (modified illumination). The control device CON T is to oblique illumination a L / S pattern 42 of the mask M with the exposure light EL, the substrate P by using the two diffracted lights of the plurality of diffracted light diffracted by the L / S pattern 42 to expose the. Figure 7 is a diagram showing an example of an optical system to be used during the exposure of the second region AR 2. In FIG. 7 (a), the optical path downstream of the light source 70 of the illumination optical system IL, for example, monopolar illumination diaphragm 71 having one opening in a position which is offset with respect to the optical axis is arranged. Light beams emitted from the light source 70 after passing through the aperture of the pole illumination diaphragm 71, passes through the lens system 73 is obliquely incident on the mask M Works / S pattern 42. Of the diffracted 0 Tsugiko及 beauty soil primary light in the L / S pattern 42 of the mask M, 0 order light and + 1-order light (or - 1-order light) only is incident on the projection optical system PL. The second region AR 2 of the substrate P is exposed to the L / S pattern 4 2 by a group Zukuni light beam interference method in the zero-order light and the +1 order light (one primary light). Alternatively, it can also be exposed with reference to FIG. 7 (b), the bipolar illumination diaphragm 7 2 having two openings in the offset with respect to the optical axis position. Or it may be used quadrupole illumination diaphragm having four openings. Also, changes in lighting conditions, not only the change of the aperture may be changed in combination and zooming optical system and a diffractive optical element. By exposure with two-beam interference method, the depth of focus size becomes <. That is, the exposure conditions based on two-beam interference method shall apply in exposure conditions that are resistant to defocus, second region AR 2 on the substrate P will have been exposed by the exposure condition resistant to defocus. Moreover this time, the projection optical system by the numerical aperture smaller unwanted orders of diffracted light PL and Katsu Bok that so as not to reduce the focal depth desired. Since the projection optical system PL of this embodiment definitive exposure apparatus EX is designed for optimum imaging characteristic by through liquid 5 0 is obtained, for example, usually not through the liquid remains illumination (circular aperture) If you try to exposure focus position (the image plane formed via the projection optical system PL position) deviated and may not can trigger forming an image of a pattern onto the substrate P. However, when the exposure process is not through the liquid, to change the exposure condition based on the exposure light conditions two light 朿 interferometry, since the exposure conditions that are resistant to defocus, a the front surface of the substrate P, not through the liquid it can be kept within the depth of focus of the projection optical system PL. Since there is a case of exposing a first area AR 1 in the exposure condition resistant to defocus such oblique illumination, in which case simply by changing the exposure conditions have liquid EXPOSURE conditions without liquid a second region AR 2 may be exposed.

When exposing the L / S pattern 4 2 in the second region AR 2 of the substrate P, similar exposure action for the first region AR 1, synchronous mask M and (L / S pattern 4 2) and the substrate P moving matter One may be exposed, may be exposed in a state of rest the mask M and the substrate P, it may be exposed while moving the substrate P in a stationary state of the mask M. For example, it had contact 6, with respect to the second region short regions AR 2 A in the scanning direction of the AR 2, can be exposed in a state of rest the mask M and the substrate P. Moreover, a long area AR 2 B in the scanning direction, when the exposure is performed while moving the substrate P in a stationary state of the mask M, pattern one down image projected in the direction of movement of the substrate P (scanning direction) there be continuously blurred. In this case, in order to satisfactorily transfer the pattern to be the area AR 2 B and pattern image blur, is matched with the moving direction of the longitudinal direction as the substrate P of the L / S pattern 4 2 of the line pattern of the mask M and keep it is desirable. Furthermore, when exposing the second region AR 2, it is preferable to reduce the numerical aperture of the projection optical system PL. Thus, unnecessary order diffracted light be incident on the projection projection optical system PL, it is possible to avoid degradation of contrast and focal depth decrease of the pattern image. As described above, with respect to the edge area AR 2 flame substrate P frame to retain the liquid under (image plane side) of the projection optical system PL, and since such exposure without passing through the liquid , it can be prevented from flowing out to the substrate outside of the liquid. In this case, the optical characteristics of the projection optical system PL because it is optimized for immersion exposure, if not through the liquid is not obtained the desired imaging position location, if not through the liquid two-beam interference law in size Kusuru that the depth of focus, can be used to form a LZS pattern 4 2 on the substrate P without using a liquid. Then, by forming a L / S pattern 4 2 is a dummy pattern in the device pattern 4 first 1 is formed regions AR 1 second region AR 2 other than on the substrate P, CMP processing is later step in can board P against the polishing surface of the CMP apparatus to avoid the occurrence of time it was inconvenient to uneven contact. In the above embodiment, the second region AR 2 has been exposed without liquid around the substrate P, may be provided a collecting device for collecting the liquid which outflows to the outside of the substrate P, the second area in the state in which the liquid under even the projection optical system PL during the exposure process the AR 2, there have while continuing the supply of the liquid may be exposed based on two-beam interference method. Resistance in this case, since the liquid to the outside of the substrate P flows out, there is a possibility that the space between the projection optical system PL and the substrate P becomes insufficient liquid immersion state, diff old carcass such as two-beam interference method since exposing the second region AR 2 in exposure conditions that can form formed and the L / S pattern in the second region AR 2. In the above embodiment has been distinguish the first area AR 1 and the second region AR 2 with shot Bok area, set the first area AR 1 and the second region AR 2 in one Shodzuto area it may be. For example, when two Chidzupu regions exist in one shot Bok area, performs immersion exposure of only one chip area close to the center of the substrate P as the first region AR 1, the chip area of ​​the other side the second as an area AR 2, or perform exposure in a manner which is resistant to the defocus, it may be subjected to treatment such as not exposed. In this case, the first area AR 1 and the second region AR 2 may be lined in the scanning direction and away in the non-scanning direction may c also, in the above embodiment, the exposure of the first region AR 1 after, but so as to dew light a second region AR 2, may be carried out exposure of the second region AR 2 before the first region AR 1. After exposure of the second region AR 2 is completed, more performing the exposure of the first region AR 1, further improving the first region device pattern 4 1 of forming precision of AR 1 high patterning accuracy is required be able to. That is, the photoresist after the exposure light irradiation is to begin the deterioration by being exposed to the outside air (air), by exposing the first region AR 1 in. After exposing the second region AR 2, the first region AR 1 can shorten the time until being developed from being exposed, the first region AR 1 of the device pattern 4 1 is exposed before the degradation of the full Saiboku Regis Bok is promoted It can be developed. Therefore, it is possible to form a device pattern 4 1 in the desired pattern formation accuracy. In the above embodiment, although provided separately from the L / S Bruno ΐ turn 4 2 The device pattern 4 1 on the mask M, device path evening Ichin 4 using 1 part of the pattern second region AR 2 to the may be exposed, may be provided butter over emissions used in the exposure of the second region AR 2 to another mask. Alternatively, as shown in FIG. 8, a glass substrate MF of the L / S pattern 4 2 is formed fixed as apposed to the mask M on the mask stage MS Ding, formed on the glass substrate MF it may be the image of the pattern 4 2 via an opening (not shown) of the mask stage MST to expose the second region AR 2 by projecting the second region AR 2 on the substrate P. In this case, not only can prevent a decrease in Surupudzu Bok since there is no need to perform the mask exchange operation for exposure of the second region AR 2, to expose a second area AR 2 on the mask M Ru advantage mower that the L / S pattern 4 2 is not necessary to provide. Coarse The pattern to be used when exposing a second region AR 2 is limited regardless the L / S pattern, it may be at the same level the fine degree of the device pattern 4 1, than device path turns 4 1 it may be a pattern. In short, butter one down degree no problem to perform the CMP process in a later step may be formed. In the embodiment described above, the irradiation Meiko irradiating the pattern when exposing the second region AR 2, but so as to project an image of the pattern in the second area AR 2, the pattern is not always necessary . That is, by crossing the two beams of coherent, interference fringes formed by the interference of the two beams, the interference fringes projected onto the second area AR 2, the interference fringes butter foremost second region AR 2 it may be formed of emissions. Figure 9 is a diagram showing another example of an optical system to be used during the exposure of the second region AR 2. In Fig. 9, the optical path downstream of the light source 8 0 capable emit coherent light such as laser light, a first lens system 81 comprising a collimator Isseki lens, the light flux passing through the first lens system 8 1 the a half mirror one 8 2 branches into two beams, a second lens system 8 3, an aperture stop 8 5 that provided. Light beams emitted from the light source 8 0 after passing through the first lens system 81, is split into two beams by a half mirror 82, the two light beams incident on the projection optical system PL via the second lens system 8 3 to. The second region AR 2 of the substrate P by Ri fringe pattern to two-beam interference method based on two light beams are formed. Thus, without using a pattern (mask M), it is also possible to expose the second region AR 2. Note As the light source 8 0, may be used an illumination optical system I said light source, may be another light source and means of the illumination optical system IL. Further, movable the hard Fumira 8 2 the inclination direction, by tilting the half mirror 82 as indicated by the broken line 82 'by changing the two directions of the light beam, Ru can change the interference fringe pitch. Further, the Suritsu Bok member having two Suritsu Bok-shaped openings are arranged on the optical path may be formed an interference fringe pattern by two light beams passing through the respective scan liter Bok-like opening. In the above embodiments, two light but exposes the beam interference method a second region AR 2 in exposure conditions in defocus is resistant such as, when exposing the second region AR 2, the liquid 5 0 taking into account the deviation of an image plane caused by the outflow, it may be adjusted in the Z-axis direction of the position of the Z stage 5 1. That may be exposed a second region AR 2 at different intervals than the distance between the projection optical system PL and the substrate P to be used during the exposure of the first region AR 1. Further, instead of adjusting the position of the Z-axis direction of the Z stage 5 1, it may be to adjust the position of the image plane formed via the projection optical system PL. That is, the image plane position so that the image surface is formed at substantially the same Z-axis direction position and when the liquid between the projection optical system PL and the substrate P to expose the first region AR 1 even if not sufficient adjustment may be carried out. The adjustment of the image plane position is accomplished by executing adjustment, for example, and changes the spherical aberration lend moving some lenses of the projection optical system PL. Also even cowpea to moving a wavelength adjustment and mask M of the exposure light EL can be determined promptly by using an adjustment of the image plane position. That the adjustment of the position adjustment and the image plane position of the Z stage 5 1 may be used in combination goes without saying. Further, without changing the illumination conditions as in the above embodiment, the numerical aperture of the Kino projection optical system PL when exposing the first region AR 1, it may only be smaller than when exposing the second region AR 2 . It is also possible to adjust the width the exposure amount of space between the width and the line pattern and the line pattern of the line pattern formed on the second region AR 2. In the above embodiments, under the process stabilization to have not a done force CMP process process conditions after the CMP process or the like by patterning for the second region AR 2 is an edge region, during the exposure process based on the liquid immersion method, it can be configured without exposing the edge area AR 2. This can prevent the outflow of the substrate outside of the liquid. The exposure apparatus EX of this embodiment is a so-called scanning stearyl collar. Te the month, the scanning direction indicated by the arrow Xa (see Fig. 3) - if the (X-direction) to the substrate P is moved for scanning exposure, the supply pipe 3, the supply nozzles 4A-4C, the recovery pipe 4, and using the recovered nozzle 5 a, 5 B, the supply and recovery of the liquid 50 is performed by the liquid supply unit 1 and the liquid recovery unit 2. That is, when moving the substrate P gar X direction, the supply pipe 3 及 beauty supply nozzle 4 (4A-4C) liquid 50 from the liquid supply apparatus 1 via the is between the projection optical system PL and the substrate P is supplied, the recovery nozzles 5 (5A, 5 B), and times Osamukan 6 liquid 50 through is recovered by the liquid recovery apparatus 2, to an X-direction so as to satisfy the between the lens 60 and the substrate P liquid 50 flows. On the other hand, the arrow X b in the scanning direction (+ X direction) indicated by the case of performing scanning exposure by moving the substrate P, the supply pipe 1 0, supply nozzles 8A-8C, the recovery pipe 1 1, and the recovery nozzles 9 A , using a 9 B, the supply and recovery of the liquid 50 is performed by the liquid supply apparatus 1 及 beauty liquid recovery apparatus 2. That is, when the substrate P moves in the + X direction, the supply pipe 1 0 and the supply nozzles 8 (8A-8C) liquid 50 from the liquid supply apparatus 1 via the is between the projection optical system PL and the substrate P in together when supplied, recovery nozzles 9 (9 a, 9 B), and through the recovery pipe 1 1 liquid 50 is recovered by the liquid recovery equipment 2, to meet between the lens 60 and the substrate P + liquid 50 flows in the X direction. Thus, the control device CO NT uses the liquid supply unit 1 and the liquid recovery apparatus 2, flow of the liquid 50 along the moving direction of the substrate P. In this case, for example, the liquid 50 from the liquid supply equipment 1 is supplied through the supply nozzle 4 flows so as to be drawn into the space 56 moves to an one X direction of the substrate P, the liquid supply unit 1 the supply energy-saving one liquid 50 even smaller can be easily supplied to the space 56. Then, by switching the direction of flow of the liquid 50 in accordance with the scanning direction, + X direction, or in the case of scanning the substrate P in the direction of one X-direction throat flickering, the lens 60 distal end surface 7 and the substrate P between can be filled with the liquid 50, it is possible to obtain high resolution and a wide depth of focus. Second Embodiment

Next, a description of another embodiment of the present invention. Here, the same reference numerals are used for the embodiment identical or similar to those obtained by the above mentioned in the following description, the explanations thereof are therefore abbreviated or omitted. Figure 1 0 is a schematic diagram of a twin-stage type exposure apparatus equipped with two stages for holding the substrate P. 1 0, twin-stage type exposure apparatus, the substrate P in a state of being retained, the first substrate stage movable each independently on a common base 91 (first movable member) PST 1 and the second substrate stage (second movable member) and a PS T 2. Also, twin-stage type exposure apparatus has a exposure a station A (immersion exposure the stations) and the measuring station B (normal exposure station), the exposure stearyl one Chillon A system described with reference to FIG. 1 are mounted, the exposure light EL is irradiated onto the first region AR 1 of the substrate P through the liquid 50 and the projection optical system PL is filled between the projection optical system (first optical system) PL and the substrate P . Note For simplicity, the liquid supply device and the liquid recovery apparatus or the like in FIG. 1 0 are not shown. In the vicinity of the mask stage MST in exposure station A, the first through the mask M and the projection optical system PL, is provided on the second substrate stage PST 1, P ST 2 on the reference member 94, 94 ' Masukuaraimen Bok system 89 for detecting the reference mark MFM are provided. Further, the exposure scan Teshiyon A, focus ■ leveling detection system 84 to detect the surface information about the surface of the substrate P (position in the Z-axis direction information and the tilt information) is provided. Four force scan ■ leveling detection system 84, and a light receiving system 84 B for receiving the light reflected from the projection system 84 A and its substrate P for projecting detection light onto the substrate P surface. On the other hand, the measuring station B is provided on the substrate P supported by a position conjugate to the substrate stage PST 2 (PST 1), a plurality of glass substrates 95 Bata one down is formed comprising a LS pattern, the glass base the second irradiation Meiko Science system for illuminating the exposure light EL 2 to butter one down the wood 95 (second optical system) IL 2, the exposure light substrate the pattern of the glass substrate 95 which is illuminated by the EL 2 stage PST 2 the second projection optical system for projecting the substrate P (PST 1) on the (second optical system) PL 2, § Lai instrument mark or the first substrate P, the second substrate stage PST 1, a reference member on PST 2 9 4, 9 4 and substrate Araimen Bok system 9 2 for detecting the reference mark PFM provided ', and a projection system 9 3 a and the light-receiving system 9 3 focus leveling detection system 9 3 that have a B It is provided. In the measuring station B, the second through the projection optical system PL 2, without liquid between the second projection optical system PL 2 and the substrate P, exposure light EL 2 in the second region AR 2 of the substrate P to. Here, a light source of the exposure light EL in the exposure station A, the measuring station B are different from each other and the light source exposure light EL 2 in the measurement station B smell Te exposure light EL used to expose a second region AR 2 2 wavelength different from the wavelength of the exposure light EL to be used in the first exposure area AR 1 in the exposure station a. Figure 1 1 is a plan view of a glass substrate 9 5. As shown in FIG. 1 1, the glass substrate 9 5 is a circular plate and has a plurality of patterns. In the example shown in FIG. 1 1, the L / S pattern 9 6 having a line pattern extending in a first person direction (Y axis direction), and dot pattern 9 7 having a large number of de Uz bets, the first second direction between the L / S pattern 9 8 having a line pattern extending in (X axis direction), a rectangular light-shielding pattern is staggered block pattern 9 provided on the (chess-like board) to the direction perpendicular 9 and are provided at substantially equal intervals in the circumferential direction of the glass substrate 9 5. As the pattern shape is not limited to that shown in Figure 1 1. Further, the glass substrate 9 5 is rotatable in mind middle shaft portion 9 5 A to 0 Z direction. Then, the glass substrate 9 5 rotates, one pattern of Uchi plurality of patterns 9 6-9 9 is summer so as to be disposed on the optical path of the exposure light EL 2. In the example shown in FIG. 1 1, L / S pattern 9 6 is disposed on the optical path of the exposure light EL 2. The present invention is not limited to the disc shape as the glass substrate 9 5, as shown in FIG. 1 2, may be a plate member planar Minori shape. Then, the rectangular glass substrate 9 5, above, a plurality of patterns 9 6-9 9 arranged in a predetermined direction is formed. The glass substrate 9 5 'has become a translatable in the predetermined direction, by moving in a predetermined direction, the glass substrate 9 5' is a pattern of the plurality of patterns 9 6-9 9 on to be placed on the optical path of the exposure light EL 2 are (the previously explained. as shown in FIG. 1 0, first, second substrate stage PST 1, PST 2 on the reference member 9 4 provided respectively, 9 4 ', and the reference mark PFM that will be detected by the substrate Araimento system 9 2, and a reference mark MFM to be detected by Masukuaraimen Bok system 8 9 are provided in a predetermined positional relationship. Further, the reference member 9 4 , 'has a substantially surface of a flat, focus' 9 4 serves as a reference plane for leveling detection system is also fulfilling. further, the reference member 9 4, 9 4 surface of' the surface of the substrate P It is set to substantially the same height. in addition, the old chromatography Bok focus leveled The configuration of the ring detection systems, for example, JP-8 -. Can be used those disclosed in 3 7 1 4 9 No. As the structure of the substrate § Leimen Bok system 9 2, JP-4- 6 5 6 0 are disclosed in 3 JP things can be used are, as the structure of a mask § Rye instrument system 8 9, for example, Japanese Patent Rights 7-1 7 6 4 6 8 No. those disclosed in Japanese can be used. the contents described in each of these documents, to the extent that is permissible by the state designated or selected in legislation in this international application, and incorporated as a part of the description of the body. next to, the operation of the twin stage type exposure apparatus having the above configuration will be explained with reference to FIG. 1 0. in the exposure station a, the first substrate stage PST on the substrate P held on the 1 using a projection optical system PL through the first liquid 5 0 region AR 1 of In the optical measurement stearyl - in Chillon B, second measurement process for the substrate P on the substrate stage PST 2, and on the substrate P held by the second projection optical system PL 2 to the second substrate stage PST 2 using exposure of the second region AR 2 is performed not through the liquid. Incidentally, the substrate P is exposed with the first region AR 1 at the exposure station a, before the measuring station B by the measurement process and the second exposure processing for the area AR 2 has been performed in advance. Here, in our Keru measurement process in the measurement stearyl one Chillon B for the second substrate P on the substrate stage PST 2, the substrate Araimen WINCH system 9 2, focus leveling detection system 9 3, and the reference member 9 4 ' measurement process not through the liquid is performed by using. Controller C_〇 NT moves the second substrate stage PST 2 of Tsukko monitoring the output of the laser interferometer to detect the XY direction position of the second substrate stage PST 2. In the course of its travel, board Araimen Bok system 9 2 detects a plurality of § Rye placement marks are formed corresponding to the Shodzu Bok region on the substrate P (not shown) not through the liquid. Note that the second substrate stage PST 2 when the substrate Araimen Bok system 9 2 detects the Araimen Bok mark is locked stop. As a result, position information of each Araimen Bok marks in the coordinate system defined by the laser interferometer is measured, the measurement result is stored in the control unit C 0 NT. However, if the substrate Araimen Bok system 9 2 can detect the Araimen Bok marks on the substrate P during movement may not stop the second substrate stage PST 2. Further, in the second during the movement of the substrate stage PST 2, the surface information of the substrate P is detected not through the liquid by the focus' leveling detection system 9 3. Focus. Detection of surface information by Reperi ring detector system 9 3 is performed for each of all the shot Bok areas eg on the substrate P, the detection result the control device to correspond to the position of the scanning direction of the substrate P (X axis direction) It is stored in the CONT. Detection of Araimen Bok mark of the substrate P, and the detection of surface † S JOURNAL substrate P ends, as in the detection area of ​​the substrate Araimento system 9 2 is positioned on the reference member 9 4 ', the control unit CONT first 2 moves the substrate stage PST 2. The substrate Araimen Bok system 9 2 detects the reference mark PFM on the reference member 9 4 ', measures the positional information of the reference mark PFM in the coordinate system defined by the laser interferometer. Upon completion of the process of detecting the reference mark PFM, the positional relationship between the plurality of Araimen Bok marks on the reference mark PFM and the substrate P, i.e., the positional relationship between the plurality of small Bok area in the reference mark PFM and the substrate P respectively It will be obtained. Also, the reference mark PFM in the second substrate stage PST 2 on the reference member 9 4 ', exposure stearyl - sucrose W

Emissions A reference member 9 4 detected by Masukuaraimen Bok system 8 9, since the reference mark MFM above a predetermined positional relationship, a plurality of small Bok area in the reference mark MFM and the substrate P in the XY plane so that the positional relationship is determined, respectively. Even these positional relationships are stored in the control device C 0 NT. Further, 'the before or after discovery of the reference mark PFM on, the control unit CONT reference member 9 4' reference member 9 4 by the substrate Araimen Bok system 9 2 focusing surface information of the surface (reference surface) of the - leveled detected by the ring detector system 9 3. 'Upon completion of the detection process of the surface of the reference member 9 4' The reference member 9 4 relationship between the surface and the surface of the substrate P so that the obtained. When not through the liquid metering process is completed, the exposure process for the second area AR 2 without passing through the liquid with the second projection optical system PL 2 is performed. When exposing a second region AR 2 of the substrate P, depending on the device pattern 4 1 formed in the first region AR 1, one pattern among the plurality of patterns 9 6-9 9 glass substrate 9 5 are selected and arranged on the optical path of the exposure light EL 2. Specifically, based on the shape of the device pattern 4 1, the pattern used to expose the second region AR 2 is selected. For example, the device pattern 4 1 if L / S bata one down extending in a predetermined direction, pattern to be exposed to the second area AR 2 also, the L / S pattern extending in the predetermined direction. Further, if the pattern of the device pattern 4 1 Gad DOO shape, also a de Uz Bok pattern pattern exposure light to the second region AR 2. That is, the second region AR 2, s to the pattern to be exposed in the first region AR 1, similar to the (or the same) pattern is exposed. Thus, for example, the substrate P even in the CMP process is uneven contact to the CMP polishing surface, it is possible to prevent the ivy inconvenience. Alternatively, based on the pattern formation density of the device pattern 4 1, may select a pattern used to expose the second region AR 2. Here, the pattern formation density, the ratio of the pattern to be formed per unit area on the substrate P, the exposure light in other words a ratio of the area to be irradiated. For example, on the glass substrate 9 5, line width and space - leave ratio between the scan width to provide a plurality of different L / S pattern, respectively, the patterning device density pattern 41 formed in the first region AR 1 depending on, select one of L / S patterns from said plurality of L / S patterns, by exposing the second region AR 2, the substrate P in the CM P process is uneven contact to CM P polishing surface at was not convenient can be prevented. First first exposure process for the regions AR 1 on the substrate P held by the substrate stage PST 1, and a second exposure process for the measurement process and the second area AR 2 on the substrate P held by the substrate stage PST 2 When but completed, the first substrate stage PST 1 is moved to the measuring station Chillon B, therewith parallel second substrate stage PST 2 is moved to the exposure station a, the first substrate stage P ST 1 and the second substrate stage PST exchange work with 2 (swapping) is performed. Then, measured in station B, together with the substrate P having been subjected to the exposure process of the first substrate stages PST 1 is conveyed to the developing device is unloaded, before the exposure processing of the substrate P is first substrate stage P ST 1 is loaded into the measurement processing and exposure processing for the substrate P of this is carried out. On the other hand, the exposure in the station A, as a second reference member 94 of the substrate stage PST 2 'and projection optical system PL is opposed, Ru is the second substrate stage PST 2 positioning. In this state, the control device CO NT uses the liquid supply device to start the supply of the liquid 50 to fill the space between the projection optical system PL and the reference member 94 'with the liquid 50, performs the measurement process through the liquid 50 . That is, the control unit CON T, as can detect the reference mark MFM on the reference member 94 'by Masukuaraimen Bok system 89, while c appreciated that moving the second substrate stage PST 2 in this state of the projection optical system PL It opposes the tip and reference member 94 '. Here, the control device CO NT starts the supply and recovery of the liquid 50 by the liquid supply system and the liquid recovery device, meet the space between the projection optical system PL and the reference member 94 'with a liquid. Next, the control unit CONT detects the reference mark MFM via the mask M, the projection optical science system PL, and the liquid 50 by Masukuaraimen Bok system 89. That is, the positional relationship between the mark and the reference mark MFM of mask M is detected through the projection optical system PL and the liquid 50. Thus through the projection optical system PL and the liquid 50, the position of the mask M definitive in the XY plane, i.e. the projection position information of the image of the pattern of the mask M is detected by using the reference mark MFM . Further, the control unit CONT, 'in a state where the liquid 50 is supplied between the reference member 94' projection optical system PL and the reference member 94 to detect the surface (reference plane) of the focus ■ leveling detection system 84, measuring the relationship between the projection optical system PL and the image plane and the reference member 94 surface 'formed through the liquid 50. Thus, the relationship between the image plane and the surface of the substrate P that is formed through the projection optical system PL and the liquid 50, will have been detected using the reference member 94 '. When the measurement process, such as is finished above, the control device CO NT, after temporarily stopping the driving of the liquid supply devices and liquids recovery device, the second substrate stage so that the projection optical system PL and the substrate P are opposed S to move the PT 2. Then, the controller CO NT is by driving the liquid supply device and the liquid recovery device, a second substrate to form the liquid immersion portion between the projection optical system PL and the substrate P, is exposed a second region AR 2 It starts exposure of the device pattern 41 on the first region AR 1 of the substrate P on the stage P ST 2. In other words, by using the information obtained during the measurement process described above, through the projection optical system PL and the liquid 50, to start the scanning exposure for each shot Bok regions on the substrate P. During scanning exposure against each of the respective shot Bok region, the position of the shot Bok regions obtained in advance in a positional relationship of the information (the measuring station B of the reference mark P FM obtained before supplying each show Bok regions of the liquid 50 information), and based on the pattern projection position information of the image of the mask M and the reference marks MFM used connexion sought after supply of the liquid 50, aligned with each shot Bok region and the mask M on the substrate P is performed. Further, during the scanning exposure for each shot Bok area, information on the relationship between the reference member 9 4 'surface and the surface of the substrate P determined before the supply of the liquid 50, and the reference member obtained after the supply of the liquid 5 0 9 4 'on the basis of the information of the positional relationship between the image plane formed through the surface and the liquid 5 0, without using the focus leveling detection system 8 4, and through the surface of the substrate P and the liquid 5 0 positional relationship between the image plane formed Te is adjusted. Incidentally, to detect the surface information of the substrate P surface with a focus ■ leveling detection system 8 4 during the scanning exposure, it may be used to verify the result of adjusting the positional relationship between the surface of the substrate P and the image plane . Further, during the scanning exposure, focus. Detects face ft paper surface of the substrate P by using the leveling detection system 8 4, further consideration of the detected face information during the scanning exposure, the substrate P surface and the image it may be to adjust the position relationship between the surface. In the embodiment described above, to adjust the positional relationship between the surface of the substrate P and the image plane may be performed by moving the second substrate stage PST 2 that holds the substrate P, the mask M and the projection optical system PL moving a portion of the plurality of lenses constituting the, it may be matched to the image plane on the surface of the substrate P. And, for the first substrate stage PST 1 mouth one de The exposure pretreatment of the substrate P has moved to the measurement station B, similar to the procedure described above, not through the measurement process and a liquid with a reference member 9 4 exposure processing is performed on the second region AR 2. As described above, a first optical system including a irradiation Meiko science system IL and the projection optical system PL irradiates the exposure light EL with respect to the first region AR 1 of the substrate P, the second region AR 2 of the substrate P since there is provided a second optical system including a second illumination optical system IL 2 and the second projection optical system PL 2 which irradiates the exposure light EL 2 each for, first, that of the second region AR 1, AR 2 can be performed in parallel exposure processing for, respectively, can you to improve the throughput Bok of exposure processing. The selection of the present embodiment, the glass substrate 9 5 may be provided a plurality of patterns, depending on the device pattern 4 1 to be formed in the first area AR 1, one of a plurality of patterns the glass substrate 9 5 rotates, while exposing the pattern in the second region AR 2 of the substrate P, in place of the glass substrate 9 5, provided Masques Te temporarily MST the measuring station B, a mask having a pattern for exposing a second area AR 2 of the substrate P on the mask stage MST is placed to expose a pattern of the mask in the second region AR 2 of the substrate P with the exposure light EL 2 it may be so. Alternatively, without using the butter over emissions, the optical system described with reference to FIG. 9 or the like may be provided on the measuring station B, it may be exposed a second region AR 2 on the substrate P by two-beam interference method . In this case, by driving the half mirror one 8 2 depending on the device pattern 4 1 of the first region AR 1, arbitrariness preferred to exposure with the interference fringe pitch corresponding to the pattern formation density of the device pattern 4 1. In the present embodiment, in returning the exposure of the second region AR 2 when exposing the first region AR 1, using different exposure light wavelengths from each other. Since the second region AR 2 is to be a pattern formation accuracy and E Tsu di portion of the substrate P are allowed be somewhat lower, for example, using a laser beam of short wavelength when exposing the first region AR 1, the second region the AR 2 when you exposure may be used a light beam or other off old Torejisu light beam capable photosensitive me emitted from a mercury lamp. Alternatively, the exposure station the light beam emitted from the light source of the exposure light EL of A for example branches using light Faiba transmitted to the measurement stearyl one Chillon B, the second region AR 2 of the substrate P by using the partial 岐光It can also be exposed to. Further, since the second projection optical science system PL 2 is relatively resolution it is acceptable even at a low, it is possible to reduce the cost of the device. However, in the course this embodiment can be used with the same exposure light of wavelengths from each other, although the twin-stage type exposure apparatus having two substrate stages has been described as an example, as shown in FIG. 1 3, above the one substrate stages PST, a projection optical system PL for exposure light EL in the first region AR 1 on the substrate P, the second projection optical system for irradiating the exposure light EL 2 in the second region AR 2 PL it may be configured to 2 and is provided. In this case, it may be one exposure light EL and the exposure light EL 2 emitted from different light sources may be one that has been emitted from the same light source. When exposing the Araimento processing is performed on the substrate P before the exposure processing that is loaded on the substrate scan Te temporarily PST, with the second projection optical system PL 2, without the liquid, on the substrate P after exposure to pair the second region AR 2 has been completed, the first exposure area AR 1 is performed via projection optical system PL and the liquid 5 0. The second optical system for exposing a second area AR 2 on the substrate P to a projection optical system (first optical science system) not need to be parallel in PL, off old Bok example the substrate before the exposure processing and co Isseki ■ Deberotsuba apparatus for developing the substrate after the coating is exposed handle Regis Bok, in the middle of the transport path between the base plate stage PST of the exposure apparatus, to expose the second region AR 2 on the substrate P it may be provided an exposure processing unit having order of the second optical system. Thus, the substrate P is immediately applied to photoresist Bok in Isseki (co before or after the exposure process to be exposed through the projection optical system PL in a state of being placed on the substrate stage PST or de, base just before it is developed in the mouth Uz Pas), it is possible to be exposed to the second area AR 2. Or, the exposure processing unit for exposing a second area AR 2 of the substrate P (second optical system), it is also possible to adopt a configuration provided in co one evening-Deberodzupa device. The first optical system for irradiating the exposure light in the first region AR 1 of the substrate P, and the exposure apparatus provided with the second optical system for irradiating the exposure light in the second area AR 2 has a projection optical system and the liquid other immersion exposure apparatus through to exposure, it is of course possible to apply to the exposure apparatus that exposes without through the liquid. For example, the first optical system for exposing the first region AR 1 (device pattern), like an optical system that uses vacuum ultraviolet light, if the relatively short lifetime of the optical elements and the light source, the first optical first, when exposed to both the second region AR 1 s AR 2 with the system, a short period of time life. Therefore, the exposure for the second area AR 2 where low resolution is acceptable, can be performed with the second optical system that does not use vacuum ultraviolet light, the reduction of the service life of the first optical system is suppressed, device cost Bok Ya it is possible to reduce the running cost me. Note that the second region AR 2 may be defined by the size of the liquid immersion area. In other words, the space to hold the liquid in the optical path of the exposure light first region AR 1, the optical path of the exposure light may be defined a region that can not be meet by the liquid and the second region AR 2. The larger the liquid immersion area, the second area AR 2 is wide, the smaller the liquid immersion area Conversely, the second area AR 2 will be defined small size and Shodzuto region on the substrate P in the liquid immersion area can determine a second region AR 2 one shot area (chip) from placement of (chip). The liquid supply device and the liquid recovery apparatus in the above embodiment, has a supply nozzle on both sides of the projection area of ​​the projection optical system PL and the recovery nozzle, in accordance with the scanning direction of the substrate P, on one side of the projection area the liquid is supplied from, but is configured to recover the liquid on the other side, the structure of the liquid supply device and the liquid recovery apparatus is not limited thereto, locally immersion area on the image plane side of the projection optical system PL is formed it is sufficient. Here, the "local immersion area" refers to a substrate P by remote small immersion area. As described above, the liquid 5 0 in the above embodiments is constituted by purified water. Pure water can be obtained in large quantities at a semiconductor manufacturing plant or the like, that it has no adverse effects on off old Bok Regis Bok and optical elements (lenses), etc. on the substrate P. Further, pure water has no adverse effects on the environment and contains very few impurities, can be expected for work of cleaning the surface of the optical element provided at the end face of the surface of the substrate, and the projection optical system PL . Then, the refractive index n ho po 1 Pure water wave with respect to the exposure light EL of about 1 9 3 nm (water). 4 7 to 1.4 4 about a is said, A r as the light source of the exposure light EL when using F excimer Mareza beam (wavelength 1 9 3 nm), 1 / n, that is, about 1 3 1~1 3 4 nm about the shorter wavelength has been higher resolution can be obtained on the substrate P. Furthermore, approximately n times than the depth of focus in the air, i.e. about 1.4 from 7 to 1.4 to be magnified four times, if the depth of focus approximately the same as that when used in air may be secured the, it is possible to increase the numerical aperture of the projection optical system PL, and resolution improves on this point. In the above embodiment, the lens 6 0 is attached to the tip of the projection optical system PL, and as the optical element attached to the distal end of the projection optical system PL, and the optical characteristics of the projection optical system PL, for example, aberration (spherical aberration, coma good c or exposure light EL even optical play Bok used to adjust the aberration or the like) may be a plane parallel plate that can transmit. An optical element to make contact with the liquid 5 0, by an inexpensive plane parallel plate from the lens, transportation of the exposure apparatus EX, the assembly, the transmittance of the projection optical system PL in the adjustment or the like, the exposure light EL on the substrate P illumination, and be attached to the illuminance distribution of the agent that reduces the uniformity (e.g. silicon organic matter) is its plane parallel plate, it is sufficient to replace the parallel plane plate immediately before supplying the liquid 5 0, an advantage is obtained such that the exchange cost Bok is lowered as compared with the case in which the optical element to make contact with the liquid 5 0 lens. That is, since the surface of the scattering particle-optical elements or due like deposition of impurities in the liquid 5 in 0 you contact with the liquid 5 0, which is generated from the resist by the irradiation of the exposure light EL is dirty, periodically the optical element it is necessary to replace the, by the optical element is the cheap parallel plane plate, lens replacement parts co scan Bok is lower than the, and it is possible to shorten the time required for replacement, maintenance costs Bok it is possible to suppress a decrease in elevated or throughput (running cost). Also if the pressure between the substrate P and the optical element at the tip of the projection optical system caused by the flow of liquids 5 0 is large, instead of the replaceable its optical element, the optical optical element by the pressure it may be firmly fixed so as not to move. Although liquid 5 0 of the above embodiment is water, a liquid other than water may be, if example embodiment, when the light source of exposure light EL is an F 2 laser, the F 2 laser beam is transmitted through the water It does not, in this case, as the liquid 5 0 may be a F 2 laser beam capable of transmitting as fluorine-based oil (full Uz Motokei liquid) or over full Uz polyether (PFPE). As the liquid 5 0, Besides, only the refractive index can There is transparent to the exposure light EL is high, stable ones against the photoresist coated on the projection optical system PL and the substrate P surface ( it is also possible to use Seda Ichiabura). Furthermore, the substrate P in each of the above embodiments, not only a semiconductor wafer for fabricating semiconductor devices but glass substrates for display devices, ceramic Dzukuweha for thin-film magnetic head, or a mask or reticle used in the exposure apparatus, of the original (synthetic stone English, silicon wafer) or the like is applied. As for the exposure apparatus EX, in the other scanning exposure apparatus by a step. And 'scan method that scans and exposes the pattern of the mask M by synchronously moving the mask M and the substrate P (scanning Sutetsupa), the mask M and the substrate P the pattern of the mask M and Batch exposed in a stationary state, it can also be applied to a projection shadow exposure apparatus by a step ■ and-repeat Bok method of moving sequentially steps the substrate P (Sutetsupa). The present invention is also applicable to an exposure apparatus of the step 'and-Sutitsuchi method for transferring stacked two patterns even without least on the substrate P in part. The type of the exposure apparatus EX, the present invention is not limited to the exposure apparatus for the semiconductor element manufacture that expose a semiconductor element Pas evening Ichin the substrate P, EXPOSURE APPARATUS and a liquid crystal display device for manufacturing or Deisupurei manufacture, to a thin film magnetic Uz de, can widely applied to an exposure apparatus for manufacturing an imaging element (CC D), or reticles and masks. Also, as described above, the present invention has the structure and the exposure operation of the twin-stage type c twin-stage type can also be applied to an exposure apparatus of the exposure apparatus, for example, JP-A-1 0 1 630 99 No. and Hei 1 0 - 2 1 No. 4783 (corresponding to US Patent 6, 341, 007, 6, 400, 441, 6, 549, 269 and 6, 590, 634), JP-T 2000- No. 505,958 (corresponding to US Patent 5, 969, 441) Alternatively U.S. Patent 6, 208, 407 are disclosed in, to the extent permitted by law of the state designated or selected in this international application, respectively, a portion of with the aid of the description of these documents body according to. Substrate stage PST and mask stage MS T in the linear motor if (USP5, 623,853 were or will see USP5,528,118) using magnetic levitation using the air floating type contact and opening one Lenz force or reactance force using air bearings but it may also be used either type. Further, each of the stages PST, MST may be a type that moves along a guide, or may be a guide dress type provided with no guide. US Patent 5, 623, 853 及 Beauty 5, 528, 1 1 8, as long as that will be allowed in the state designated or selected in legislation in this international application, the are incorporated herein by reference. As each of the stages PST, MS T of the drive mechanism, the drive magnet Interview Knitting Bok arranged magnets, each of the stages PST by an electromagnetic force is opposed to the armature Yuni' Bok placing the coil in a two-dimensional, the MST in a two-dimensional it may be used a plane motor. In this case, to connect either one of the magnet Interview two Uz Bok and armature Yuni' Bok stages PST, the MS T, provided the other with magnet Yunidzuto and armature Yuni' Bok the moving surface side of stage PST. MST I if Re. have. The reaction force generated by the movement of the substrate stage PST, so as not transmitted to the projection optical system PL, may be mechanically released to the floor (ground) using a frame radical 28 material. The method for handling the reaction force, for example, U.S. Patent 5, 5 2 8, 1 1 8 (JP-8 1 6 6 4 7 5 No. Gazette) in which is disclosed in detail, this US patent, the to the extent allowed by law of the state designated or selected in the international application, the are incorporated herein by reference. Reaction force generated by the movement of the mask stage MST, in such transmitted to the projection optical system PL odd, may be mechanically released to the floor (ground) using a frame member. This handling of the reaction force, for example, U.S. Patent 5, 8 7 4, 8 2 0 (JP-8 3 3 0 2 2 4 No. Gazette) in which is disclosed in detail, specified in the present international application or to the extent that is permissible in the selected national legislation, and are incorporated herein by reference and the contents of this document. As described above, the exposure apparatus EX of the present embodiment is manufactured by assembling various subsystems, including each constituent element recited in the claims of the present application so that the predetermined mechanical accuracy, the optical accuracy , it is manufactured by assembling. To ensure these respective precisions, performed before and after the assembling include the adjustment for achieving the optical accuracy for various optical systems, an adjustment to achieve mechanical accuracy for various mechanical systems, with the various electrical systems adjustment for achieving the electrical accuracy Te. The steps of assembling the various subsystems into the exposure apparatus includes various subsystems, the mechanical interconnection, electrical circuit wiring connections, and the piping connection of the air pressure circuit. The various subsystems before assembly and process of the exposure apparatus, there are also the processes of assembling each individual subsystem. After completion of the assembling the various subsystems into the exposure apparatus, overall adjustment is performed and various kinds of accuracy as the entire exposure apparatus are secured. The manufacturing of the exposure apparatus is preferably performed in a clean room in which temperature and cleanliness are controlled. Microdevices such as semiconductor devices are manufactured, as shown in FIG. 1 4, Step 2 0 1 perform functions ■ performance design of the micro device, Step 2 0 2 of manufacturing a mask (reticle) based on this design step, the device scan Tetsupu 2 0 3 of producing a substrate as a base material, the exposure process steps 2 0 4 for exposing a pattern of a mask onto a substrate by the exposure apparatus EX of the embodiment described above, a device assembly step (dicing, bonding, packaging comprising the step) 2 0 5, an inspection step 2 0 6 or the like. APPLICABILITY According to the present invention on the industrial, in the immersion exposure. Thus to expose a first region and a second region on the substrate in different exposure conditions, suppresses the outflow of the liquid to the substrate outside while also satisfactorily pattern transfer against Etsu di regions of the substrate, can manufacture a device that can exhibit desired performance.

Claims

The scope of the claims
1. An exposure method you exposing a substrate by transferring an image of a predetermined pattern on a substrate by a projection optical system,
Wherein supplying a liquid between the projection optical system and said substrate, exposing the first region on the substrate through the liquid,
E¾7t how to expose a second region on a different said substrate from the first area, without supplying the liquid.
2. Using a projection optical system, a method of exposing a substrate having a first region and a second region,
Supplying a liquid between the projection optical system and the substrate, exposing the substrate through the liquid,
And exposure conditions for exposing the first region, the dew destination ¾ method exposure conditions are different for exposing a second region.
3. The second region is dew destination of claim 1 or 2 is an edge periphery of the substrate} 2
4. The exposure method according to claim 1 or 2 for exposing the second region on the substrate under the exposure condition that is resistant to defocus.
5. The first than when exposing the area, previous remarks the exposure method according to claim 1 or 2 to reduce the numerical aperture of the projection projection optical system to be used during the exposure of oneself second region.
6. The second region EXPOSURE method according to claim 1 or 2 is exposed by two-beam interference method.
. 7 wherein the second region, the line pattern line Anne de formed at a predetermined pitch - exposure method according to claim 6 for projecting an image of the space pattern..
8. The first pattern is used to expose the first area, the exposure method according to claim 1 or 2, different from the second pattern used for exposure of the second region.
9. The first region is exposed while moving the substrate and the first pattern, the second region is exposed mounting serial to claim 8, exposure in a state of rest and said substrate and said second pattern Method.
1 0. The first region is exposed while moving the substrate and the first pattern, the second region, wherein the second state of the pattern stationary and exposed light while moving the substrate the exposure method according to claim 8.
1 1. The exposure method according to claim 8 which is formed on the same mask and the first pattern and the second pattern.
1 2. The first path evening Ichin is formed on a mask, the second pattern on the mask stage for holding the mask, the mask and is made form the material group which is fixed to a position away the exposure method according to claim 8 which are.
1 3. The between when exposing the second region and the time of exposure of the first region, the exposure method according to claim 1 or 2 at different intervals between the projecting projection optical system and the substrate.
1 4. The between when exposing the second region and the time of exposure of the first region, and the interval between the substrate and the projection projection optical system is almost the same, the form through the projection optical system the exposure method according to claim 1 or 2 to adjust the position of the image plane is made.
1 5. After exposure of the second region is completed, an exposure method according to claim 1 or 2 for light exposure for the first region.
1 6. Using a projection optical system, a method of exposing a substrate having a first region and a second region,
And supplying a liquid between the projection optical system and the substrate;
That exposing the substrate through the liquid; wherein,
The exposure method in which only the region except the edge portion on the substrate is exposed.
1 7. Device manufacturing method using the exposure method according to any one of claims 1, 2 and 1 6.
In 1 8. Exposure apparatus for exposing a plurality of regions on the substrate,
A first optical system for irradiating the exposure light in a first region on a substrate,
The exposure apparatus comprising a second optical system for irradiating the exposure light to the second region on different said substrate from the first region.
1 9. The wavelength of the exposure light used in the exposure of the first region, the exposure apparatus according to different claims 1 8 and the wavelength of exposure light used for exposure of the second region.
2 0. With the a first movable member which is movable while holding a substrate having a first and second region, and a second movable member which is movable while holding the substrate having the first and second regions , during the exposure of the first region on the substrate held on the first movable member using the first optical system, first using the second optical system on the substrate held on the second movable member the second region is exposed, the after end of exposure of the first region on the substrate held on the first movable body, using the first optical system of the first area on the substrate held on the second movable member an apparatus according to claim 1 8 to start the exposure.
2 1 - the second region is exposed instrumentation of claim 1 8 is an edge periphery of the substrate
2 2. The second region is exposed instrumentation of claim 1 8, which is exposed by the two-beam interference method
2 3. The first region, the exposed through a liquid between the first optical system and said substrate, said second region, without the liquid between the second optical system and the substrate An apparatus according to 請 Motomeko 1 8 to be exposed.
2 4. Device which comprises using the exposure apparatus according to claim 1 8 production method c
2 5. An exposure apparatus which exposes a substrate,
Comprising a liquid supply apparatus, a first station the substrate is exposed through a liquid supplied by said liquid supply system;
A second station substrate in which the liquid is supplied is exposed; exposure apparatus comprising a.
2 6. The substrate has a first and second regions, the first region is exposed through a liquid in a first station, according to claim 2 in which the second region is exposed without liquid in the second station the exposure apparatus according to 5.
2 7. Further, the first projection optical system provided in the first station, an exposure apparatus according to claim 2 5 and a second projection optical system provided in the second stage ® down.
2 8. Further, the exposure apparatus according between the first station and the second station, to claim 2 5 comprising first and second movable member for Alternating movable while holding the substrate.
2 9. The first and second movable body, a reference member for positioning the exposure area of ​​the substrate have been kicked set, before the exposure is performed in the first station, the exposure of the substrate Te second station odor An apparatus according to claim 2 8 alignment region is carried out.
3 0. After the second region of the substrate is exposed by the second station, the substrate is moved to the first station by the first or second movable member, the first area liquid is supplied to the first region the exposure apparatus according to any one of claims 2 5-2 8 to be exposed.
PCT/JP2003/015408 2002-12-10 2003-12-02 Exposure method, exposure apparatus and method for manufacturing device WO2004053951A1 (en)

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