JPH10255319A - Master disk exposure device and method therefor - Google Patents
Master disk exposure device and method thereforInfo
- Publication number
- JPH10255319A JPH10255319A JP9076450A JP7645097A JPH10255319A JP H10255319 A JPH10255319 A JP H10255319A JP 9076450 A JP9076450 A JP 9076450A JP 7645097 A JP7645097 A JP 7645097A JP H10255319 A JPH10255319 A JP H10255319A
- Authority
- JP
- Japan
- Prior art keywords
- master
- exposure apparatus
- liquid
- nozzle
- condenser lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、光ディスク等の記
録媒体用基板の原盤を製造するための原盤露光装置に関
し、より詳細にはフォトレジストを塗布した原盤を露光
する際の露光解像力を向上することができる原盤露光装
置及び方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a master exposure apparatus for manufacturing a master of a substrate for a recording medium such as an optical disk, and more particularly, to improving an exposure resolution when exposing a master coated with a photoresist. The present invention relates to a master exposure apparatus and method capable of performing the same.
【０００２】[0002]
【従来の技術】コンパクトディスクや光磁気ディスクの
基板は、プリフォーマット信号に対応するグルーブやプ
リエンボスピットのパターンを原盤上に露光及び現像に
より形成した後、得られた原盤を複製してスタンパを作
製し、スタンパを装着した射出成型器でプラスチック材
料等を射出成型することによって製造される。原盤にグ
ルーブやプリエンボスピットのパターンを形成するため
に原盤露光装置が用いられている。原盤露光装置は、通
常、フォトレジストが塗布されたガラス原盤を回転しな
がら、原盤面に照射するレーザ光をプリフォーマット信
号に応じてオンオフすることによって所定のパターンで
フォトレジストを感光する。感光した原盤は、原盤露光
装置から取り外された後、現像装置のターンテーブルに
装着され、回転している原盤表面に上方からアルカリ液
を供給することにより現像が行われる。現像が終わる
と、原盤に形成された溝やピットの寸法が適切がどうか
を光ヘッドを備えた検査装置により検査される。こうし
てスタンパ形成用の原盤が作製されている。2. Description of the Related Art On a substrate of a compact disk or a magneto-optical disk, a pattern of grooves or pre-embossed pits corresponding to a preformat signal is formed on a master by exposure and development, and the obtained master is duplicated to form a stamper. It is manufactured by injection molding a plastic material or the like with an injection molding machine equipped with a stamper. A master exposure apparatus is used to form a pattern of grooves and pre-embossed pits on the master. The master exposure apparatus usually exposes the photoresist in a predetermined pattern by turning on / off a laser beam applied to the master surface in accordance with a preformat signal while rotating the glass master coated with the photoresist. After the exposed master is removed from the master exposure apparatus, the exposed master is mounted on a turntable of a developing device, and development is performed by supplying an alkaline solution from above to the rotating master surface. After the development, the inspection device equipped with an optical head inspects whether the dimensions of the grooves and pits formed in the master are appropriate. Thus, a master for forming a stamper is manufactured.
【０００３】上述の原盤露光装置として、例えば、テレ
ビジョン学会誌 Vol 37, No.6, 475-490頁（1983年）に
は、レーザ光波長λ＝４５７．９８ｎｍ、レンズ開口数
ＮＡ＝０．９３の光ヘッドを用いて、原盤上にスポット
サイズ約０．５μｍにレーザ光を絞り込むことができる
ＶＨＤ／ＡＨＤ方式ビデオディスクのレーザカッティン
グマシンが開示されている。このカッティングマシンを
用いると最小０．２５μｍのエンボスピットを形成する
ことができることが報告されている。また、このカッテ
ィングマシンはレーザスポットを原盤に追従させるため
にＨｅ−Ｎｅレーザを補助ビームとしたフォーカシング
サーボ系を用いている。As the master exposure apparatus described above, for example, in the Journal of the Institute of Television Engineers of Japan Vol. 37, No. 6, pp. 475-490 (1983), laser beam wavelength λ = 457.98 nm, lens numerical aperture NA = 0. A laser cutting machine for a VHD / AHD video disk capable of narrowing a laser beam to a spot size of about 0.5 μm on a master using an optical head 93 is disclosed. It is reported that embossed pits having a minimum of 0.25 μm can be formed using this cutting machine. Further, this cutting machine uses a focusing servo system using a He-Ne laser as an auxiliary beam in order to make a laser spot follow the master.
【０００４】特開平６−１８７６６８号公報は、狭トラ
ックピッチ化、高密度記録しても隣接トラックからのク
ロストークを軽減することができる光ディスク原盤の製
造方法を開示しており、原盤露光において上記文献とほ
ぼ同様の構成のレーザカッティングマシンを使用してい
る。Japanese Patent Application Laid-Open No. Hei 6-187668 discloses a method for manufacturing an optical disk master capable of reducing crosstalk from adjacent tracks even when the track pitch is reduced and the recording density is increased. A laser cutting machine having almost the same configuration as that of the literature is used.
【０００５】[0005]
【発明が解決しようとする課題】近年のマルチメディア
化による情報量の増大に伴い、光ディスク等の情報記録
媒体の高密度化、大容量化が要望されている。この要望
に応えるために、原盤露光装置においても光ディスク等
に記録するエンボスピットやグルーブのパターンをより
微小化して露光する必要がある。かかる微小パターンを
露光するには、レーザ光を原盤に集光するレンズの開口
数（ＮＡ）を増大すること、レーザ光の波長を短波長化
することが考えられる。しかしながら、レンズのＮＡ及
びレーザ波長の短波長化には限界があり、露光分解能を
大幅に向上することは容易ではない。With the recent increase in the amount of information due to the use of multimedia, there has been a demand for an information recording medium such as an optical disk to have a higher density and a larger capacity. In order to respond to this demand, it is necessary for the master exposure apparatus to make the pattern of embossed pits and grooves to be recorded on an optical disk or the like smaller and to perform exposure. In order to expose such a minute pattern, it is conceivable to increase the numerical aperture (NA) of a lens that focuses the laser light on the master and to shorten the wavelength of the laser light. However, there is a limit to shortening the NA of the lens and the laser wavelength, and it is not easy to greatly improve the exposure resolution.
【０００６】また、前記のように露光及び現像工程は、
それぞれ、原盤露光装置及び現像装置を用いて別々に行
われていたため、装置コストがかかるとともに、装置設
置スペースも必要であり、さらにスタンパを製造するま
での工程を煩雑化していた。Also, as described above, the exposure and development steps
Since each of the processes is performed separately using the master exposure device and the developing device, the cost of the device is increased, the space for installing the device is required, and the process of manufacturing the stamper is complicated.
【０００７】本発明の目的は、情報ピットの微小化及び
狭トラックピッチ化に対応した狭溝化を実現することが
できる原盤露光装置を提供することにある。An object of the present invention is to provide a master exposure apparatus capable of realizing a narrow groove corresponding to a miniaturization of an information pit and a narrow track pitch.
【０００８】また、本発明の別の目的は、露光機能のみ
ならず現像機能をも備え且つ露光解像力が向上した原盤
露光装置を提供することにある。Another object of the present invention is to provide a master disc exposure apparatus which has not only an exposure function but also a development function and has improved exposure resolution.
【０００９】本発明のさらに別の目的は、情報ピットの
微小化及び狭トラックピッチ化に対応した狭溝化を実現
することができる原盤露光方法を提供することにある。Still another object of the present invention is to provide a master exposure method capable of realizing a narrow groove corresponding to a miniaturization of information pits and a narrow track pitch.
【課題を解決するための手段】本発明の第１の態様に従
えば、フォトレジストを塗布した記録媒体製造用原盤に
レーザ光を集光して照射することによりフォトレジスト
を所望のパターンに感光する原盤露光装置において、上
記レーザ光を上記原盤表面に集光するための光学素子
と、上記光学素子と上記原盤表面との間の光路に液体を
介在させるための手段とを備えることを特徴とする原盤
露光装置が提供される。According to a first aspect of the present invention, a photoresist is exposed to a desired pattern by condensing and irradiating a laser beam onto a master for recording medium production coated with the photoresist. In the master exposure apparatus, an optical element for condensing the laser beam on the master surface, and means for interposing a liquid in an optical path between the optical element and the master surface are provided. A master exposure apparatus is provided.
【００１０】本発明の原盤露光装置の原理を図６を用い
て説明する。図６は、本発明の原盤露光装置の光ヘッド
により露光されている原盤１９近傍の拡大概念図であ
る。原盤露光装置のレーザ光源（図示しない）から照射
されたレーザ光４はリレーレンズ１５を介して集光レン
ズ１７により原盤上に塗布されたフォトレジスト膜２０
の表面に集光される。本発明の原盤露光装置は、図６に
示したように液体２００を原盤表面上に供給するノズル
２１０を備えており、露光動作中には、このノズル２１
０から供給された液体２００により原盤のフォトレジス
ト膜２０と集光レンズ１７との間隙は充満される。ここ
で、集光レンズ１７により識別しうる２点間の最小距離
ｒは一般に下記式（１）により表される。The principle of the master exposure apparatus of the present invention will be described with reference to FIG. FIG. 6 is an enlarged conceptual diagram of the vicinity of the master 19 exposed by the optical head of the master exposure apparatus of the present invention. Laser light 4 emitted from a laser light source (not shown) of the master exposure apparatus is applied to a photoresist film 20 applied on the master by a condenser lens 17 via a relay lens 15.
It is collected on the surface of. The master exposure apparatus of the present invention includes a nozzle 210 for supplying the liquid 200 onto the master surface as shown in FIG.
The gap between the photoresist film 20 of the master and the condenser lens 17 is filled with the liquid 200 supplied from 0. Here, the minimum distance r between two points that can be identified by the condenser lens 17 is generally represented by the following equation (1).
【００１１】[0011]
【数１】 ｒ＝λ／ＮＡ＝λ／（ｎ・ｓｉｎα） ・・・（１） 式中、λは集光レンズ１７に入射するレーザ光４の波
長、ＮＡは集光レンズ１７の開口数、ｎは集光レンズ１
７の物点側（原盤側）媒質の屈折率、αは集光レンズ１
７から照射される光束の最大開きの半分すなわち開口半
角をそれぞれ示す。集光レンズ１７により識別しうる２
点間の最小距離ｒが小さいほど、原盤露光装置の露光解
像力が高いといえる。レーザ光の波長λを一定とした場
合、ｒを小さくするには上式（１）からＮＡを大きくす
ればよいことがわかる。ＮＡは式（１）のようにＮＡ＝
ｎ・ｓｉｎαで定義されるので、ＮＡを増大するには屈
折率ｎと開口半角αを大きくすればよい。本発明では原
盤の表面２０と集光レンズ１７との間に液体２００（ｎ
＞１）が充満されているので、空気（ｎ＝１）が原盤表
面と集光レンズ間に介在する場合、すなわち、従来の原
盤露光装置の集光レンズよりもＮＡを増大することがで
きる。換言すれば、本発明の原盤露光装置では、集光レ
ンズ１７を液浸レンズとして機能させることができる。
液体２００は、ＮＡを大きくするために、屈折率の大き
な液体が好ましいが、レンズ１７の収差の防止する観点
から原盤の表面２０と集光レンズ１７との間隔を微調整
する場合には、集光レンズ１７の屈折率に近い屈折率を
有する液体、例えば、セダー油を用いるのが好ましい。
しかしながら、液体２００は、原盤のフォトレジスト膜
２０と接触することになるので、フォトレジストを腐食
させず且つ後処理が容易であるという観点から水が好適
である。R = λ / NA = λ / (n · sin α) (1) where λ is the wavelength of the laser beam 4 incident on the condenser lens 17, and NA is the numerical aperture of the condenser lens 17. , N is the condenser lens 1
7, the refractive index of the medium on the object point side (master side), α is the condenser lens 1
7 shows the half of the maximum aperture of the light beam irradiated from No. 7, that is, the half angle of the aperture. 2 that can be identified by the condenser lens 17
It can be said that the smaller the minimum distance r between the points, the higher the exposure resolution of the master exposure apparatus. When the wavelength λ of the laser light is fixed, it can be seen from the above equation (1) that the NA should be increased in order to reduce r. NA is expressed as NA =
Since it is defined by n · sin α, the NA can be increased by increasing the refractive index n and the aperture half angle α. In the present invention, the liquid 200 (n) is placed between the surface 20 of the master and the condenser lens 17.
Since> 1) is filled, the NA can be increased when air (n = 1) intervenes between the master surface and the condenser lens, that is, as compared with the condenser lens of the conventional master exposure apparatus. In other words, in the master exposure apparatus of the present invention, the condenser lens 17 can function as a liquid immersion lens.
The liquid 200 is preferably a liquid having a large refractive index in order to increase the NA. However, from the viewpoint of preventing aberration of the lens 17, when finely adjusting the distance between the surface 20 of the master and the condenser lens 17, the liquid 200 may be used. It is preferable to use a liquid having a refractive index close to the refractive index of the optical lens 17, for example, cedar oil.
However, since the liquid 200 comes into contact with the photoresist film 20 of the master, water is preferable from the viewpoint of not corroding the photoresist and facilitating post-processing.
【００１２】本発明の原盤露光装置は、さらに、現像液
を原盤上に供給するための手段を有することができる。
原盤露光装置に現像液供給手段を装着することにより露
光後のプロセスに使用されていた現像装置が不要とな
り、露光・現像プロセスを簡略化することが可能にな
る。The master exposure apparatus of the present invention can further include means for supplying a developer onto the master.
By attaching the developing solution supply means to the master exposure apparatus, the developing apparatus used for the post-exposure process becomes unnecessary, and the exposure and development process can be simplified.
【００１３】上記現像液を原盤上に供給するための手段
は、上記光学素子と原盤との間に介在させる液体または
現像液を原盤上に吐出するためのノズルと、該ノズルに
上記液体または現像液を供給するための供給装置と、上
記ノズルへの上記液体または現像液の供給を切り換える
ための切り換え装置とから構成することができる。本発
明の原盤露光装置の具体例では、集光レンズと原盤との
間に液体を介在させるために原盤上に液体を吐出するた
めのノズルとノズルに液体を供給するための供給装置を
用いているので、供給液を現像液と露光用の液体とで切
り換えることができる切り換え装置、例えば、電磁弁を
装着すれば、かかるノズル及び液体供給装置を現像液供
給用としても用いることができ、一層簡単な構造で現像
機能を原盤露光装置に組み込むことができる。The means for supplying the developing solution onto the master includes a nozzle for discharging a liquid or a developing solution interposed between the optical element and the master onto the master, and a nozzle for discharging the liquid or developing solution to the nozzle. It can be constituted by a supply device for supplying the liquid and a switching device for switching the supply of the liquid or the developer to the nozzle. In a specific example of the master disc exposure apparatus of the present invention, a nozzle for discharging liquid onto the master disc and a supply device for supplying liquid to the nozzles are used, in order to interpose a liquid between the condenser lens and the master disc. Therefore, if a switching device that can switch the supply liquid between the developer and the exposure liquid, for example, an electromagnetic valve is attached, such a nozzle and the liquid supply device can also be used for the supply of the developer. With a simple structure, the developing function can be incorporated in the master exposure apparatus.
【００１４】本発明の原盤露光装置は、さらに、露光及
び現像された原盤のピットや溝の幅や深さ等を検査する
ための検査装置を備えることができる。これにより、原
盤露光装置により露光・現像・検査が一つの装置で可能
となり、設備コストの削減及びスタンパ製造までのプロ
セスを簡略化することができる。従来の検査装置は光ヘ
ッドを備え、光ヘッドからの検査光を走査して現像露光
されたピットや溝幅を検査していたので、原盤露光装置
の集光レンズを含む光ヘッドを検査用の光ヘッドとして
使用することが可能となり、装置の簡略化及び小型化が
可能となる。The master exposure apparatus of the present invention can further include an inspection apparatus for inspecting the width and depth of pits and grooves of the exposed and developed master. As a result, exposure, development, and inspection can be performed by one master exposure apparatus using a single apparatus, thereby reducing equipment costs and simplifying the process up to stamper manufacture. Conventional inspection equipment has an optical head and scans the inspection light from the optical head to inspect the developed pits and groove widths. The device can be used as an optical head, and the device can be simplified and downsized.
【００１５】本発明の第２の態様に従えば、フォトレジ
ストを塗布した記録媒体製造用原盤にレーザ光を集光し
て照射することによりフォトレジストを所望のパターン
に感光する原盤露光方法において、上記レーザ光を集光
するための光学素子と原盤との間に液体を介在させなが
ら原盤露光を行うことを特徴とする原盤露光方法が提供
される。According to a second aspect of the present invention, there is provided a master exposure method for exposing a photoresist to a desired pattern by condensing and irradiating a laser beam onto a master for recording medium coated with a photoresist, the method comprising: A master disc exposure method is provided, wherein the master disc exposure is performed while a liquid is interposed between the optical element for condensing the laser light and the master disc.
【００１６】本発明の原盤露光方法に従えば、レーザ光
を集光するための光学素子と原盤との間に液体を介在さ
せながら原盤露光を行うために、光学素子を液浸レンズ
として機能させて光ヘッドの露光解像力を向上させるこ
とができる。また、露光中に原盤上に付着した塵等を液
体を流動させることにより除去することができる。According to the master exposure method of the present invention, in order to perform master exposure while interposing a liquid between the optical element for condensing laser light and the master, the optical element is made to function as a liquid immersion lens. Thus, the exposure resolution of the optical head can be improved. Also, dust and the like adhering to the master during exposure can be removed by flowing a liquid.
【００１７】[0017]
【発明の実施の形態】以下、本発明の固体イマージョン
レンズを用いた原盤露光装置の実施の形態及び実施例を
図面を参照しながら説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments and examples of a master exposure apparatus using a solid immersion lens according to the present invention will be described below with reference to the drawings.
【００１８】〔第１実施例〕本発明に従う原盤露光装置
の第１実施例を図１により説明する。図１は、原盤露光
装置１００の構成概略を示す。原盤露光装置１００は、
主に、露光用のレーザ光を出射するレーザ光源１、原盤
１９への照射タイミング及び照射位置をそれぞれ調整す
る音響光学（ＡＯ）変調器７及び音響光学（ＡＯ）偏向
器９、露光用光ヘッド２７、原盤１９を回転するターン
テーブル２１、原盤１９上に水を吐出するノズル２１０
及び水／現像液供給装置２２０、照射されたスポットを
観測するための撮像管２４及びディスプレイ２６並びに
光路を調整するためのビームスプリッター３、ミラー１
１、ハーフミラー１３、レンズ６等の種々の光学素子か
ら構成されている。[First Embodiment] A first embodiment of a master exposure apparatus according to the present invention will be described with reference to FIG. FIG. 1 shows a schematic configuration of a master exposure apparatus 100. The master exposure apparatus 100
Mainly, a laser light source 1 for emitting laser light for exposure, an acousto-optic (AO) modulator 7 and an acousto-optic (AO) deflector 9 for adjusting the irradiation timing and irradiation position on the master 19, respectively, and an exposure optical head 27, turntable 21 for rotating master 19, nozzle 210 for discharging water onto master 19
And a water / developer supply device 220, an image pickup tube 24 and a display 26 for observing an irradiated spot, a beam splitter 3 for adjusting an optical path, and a mirror 1.
1, a half mirror 13, a lens 6, and other various optical elements.
【００１９】レーザ光源１から出射されたレーザ光束２
はビームスプリッタ３により第１の光束４と第２の光束
５に分けられる。第１の光束４は、一対のレンズ６で挟
まれたＡＯ変調器７に入射して、記録すべき信号のタイ
ミングに応じたパルス光に変調される。ＡＯ変調器７で
変調されたパルス光はミラー８で反射された後、ＡＯ偏
向器９に入射して原盤１９の所定の半径方向位置を照射
するように偏向される。次いで、偏向された光は、偏光
ミラー１０及びミラー１１を経て光ヘッド２７に入射す
る。光ヘッド２７には後述するリレーレンズ１５及び集
光レンズ１７が装着されており、それらのレンズにより
レーザ光は原盤１９の表面の所定位置に集光される。原
盤１９上には予め入射光に対して感光性のフォトレジス
ト２０が塗布されている。一方、第２の光束５はＥＯ変
調器１２に入射する。ＡＯ変調器７の代わりにＥＯ変調
器１２により照射タイミング及び露光量を変調してもよ
い。ＥＯ変調器１２を通過した光はハーフミラー１３で
反射され、λ／２位相板１４を透過した後、偏光ミラー
１０、ミラー１１を経て光ヘッド２７に到達する。Laser beam 2 emitted from laser light source 1
Is split into a first light beam 4 and a second light beam 5 by the beam splitter 3. The first light beam 4 enters an AO modulator 7 sandwiched between a pair of lenses 6 and is modulated into pulse light according to the timing of a signal to be recorded. The pulse light modulated by the AO modulator 7 is reflected by the mirror 8, then enters the AO deflector 9 and is deflected so as to irradiate a predetermined radial position of the master 19. Next, the deflected light is incident on the optical head 27 via the polarizing mirror 10 and the mirror 11. The optical head 27 is equipped with a relay lens 15 and a condenser lens 17 described later, and the laser light is focused on a predetermined position on the surface of the master 19 by these lenses. On the master 19, a photoresist 20 that is sensitive to incident light is applied in advance. On the other hand, the second light beam 5 enters the EO modulator 12. The irradiation timing and the exposure amount may be modulated by the EO modulator 12 instead of the AO modulator 7. The light that has passed through the EO modulator 12 is reflected by the half mirror 13, passes through the λ / 2 phase plate 14, and reaches the optical head 27 via the polarizing mirror 10 and the mirror 11.
【００２０】ノズル２１０はターンテーブル２１の上方
で且つ原盤１９の中心近傍に配置されており、原盤１９
に向かって水２００を吐出する。ターンテーブル２１に
より原盤１９が回転されるとその遠心力で水２００は原
盤１９の外周に広がり、原盤のフォトレジスト膜２０を
覆う水膜を形成する。原盤１９の外周に向かって流動し
た水２００は集光レンズ１７と原盤のフォトレジスト表
面２０との間を充満するため、集光レンズ１７は液浸レ
ンズとして機能する。The nozzle 210 is disposed above the turntable 21 and near the center of the master 19.
The water 200 is discharged toward. When the master 19 is rotated by the turntable 21, the water 200 spreads on the outer periphery of the master 19 due to the centrifugal force, and forms a water film covering the photoresist film 20 of the master. Since the water 200 flowing toward the outer periphery of the master 19 fills the space between the condenser lens 17 and the photoresist surface 20 of the master, the condenser lens 17 functions as a liquid immersion lens.
【００２１】光ヘッド２７から原盤１９上のフォトレジ
スト膜２０に照射された光は、前記式（１）及び液浸レ
ンズの原理により空気中の理論的な最小スポット径より
も小さなスポットを形成してフォトレジスト膜２０を感
光させる。このため、従来の原盤露光装置よりも露光解
像力が向上し、一層微細なピット及び案内溝のパターン
を高精度で露光することができる。光ヘッド２７の構造
の詳細については後述する。The light emitted from the optical head 27 to the photoresist film 20 on the master 19 forms a spot smaller than the theoretical minimum spot diameter in air according to the above equation (1) and the principle of the immersion lens. To expose the photoresist film 20. For this reason, the exposure resolution is improved as compared with the conventional master exposure apparatus, and a finer pattern of pits and guide grooves can be exposed with high accuracy. Details of the structure of the optical head 27 will be described later.
【００２２】原盤１９のフォトレジスト膜２０の表面か
ら反射された光は、集光レンズ１７及びリレーレンズ１
５を透過して平行光となり、ミラー１１、偏光ミラー１
０、ハーフミラー１３を経てレンズ２２により撮像管２
４上に集光される。撮像管２４のディスプレイ２６に表
示されたスポット像２６ａ，２６ｂを観察することによ
り、集光レンズ１７によって形成されるスポット形状を
確認することができる。The light reflected from the surface of the photoresist film 20 of the master 19 is collected by the condenser lens 17 and the relay lens 1.
5, the light becomes parallel light, and the mirror 11, the polarizing mirror 1
0, the imaging tube 2 by the lens 22 through the half mirror 13
4 are collected. By observing the spot images 26a and 26b displayed on the display 26 of the image pickup tube 24, the spot shape formed by the condenser lens 17 can be confirmed.
【００２３】レーザ光源１、ＡＯ変調器７、ＥＯ変調器
１２、ターンテーブル２１等の動作は、図示しない制御
部（図３及び図４参照）により一括して管理される。制
御部にはプリフォーマット信号が入力され、それに応じ
てＡＯ変調器７等の発光周期等が調整される。The operations of the laser light source 1, the AO modulator 7, the EO modulator 12, the turntable 21, and the like are collectively managed by a control unit (not shown) (see FIGS. 3 and 4). A preformat signal is input to the control unit, and the light emission cycle of the AO modulator 7 and the like are adjusted accordingly.
【００２４】次に、原盤露光装置１００の光ヘッド２７
の構造の詳細を図２及び図３を用いて説明する。図２
は、集光レンズ１７を弾性部材１８を介して支持する光
ヘッド２７を下方から見た斜視図を示し、図３は光ヘッ
ド２７の拡大断面図を示す。なお、図３には、光ヘッド
２７の構造を分かり易くするために、ノズル２１０から
吐出された水２００の図示は省略してある。Next, the optical head 27 of the master exposure apparatus 100
2 will be described in detail with reference to FIGS. FIG.
3 is a perspective view of the optical head 27 supporting the condenser lens 17 via the elastic member 18 as viewed from below, and FIG. 3 is an enlarged sectional view of the optical head 27. In FIG. 3, illustration of the water 200 discharged from the nozzle 210 is omitted for easy understanding of the structure of the optical head 27.
【００２５】図２に示すように光ヘッド２７は、集光レ
ンズ１７と、集光レンズ１７を保持する集光レンズホル
ダ１６ａと、光ヘッドベース部２８とを備え、集光レン
ズホルダ１６ａはベース部２８の底面に固着された４本
の支持部材２９及びそれに接続された弾性部材１８ａ、
例えば板バネにより支持されている。この支持構造によ
り、集光レンズホルダ１６ａは、原盤平面と平行な方向
（図中Ｘ，Ｙ方向）に拘束され、集光レンズ１７の光軸
方向（図中Ｚ方向）に可動である。As shown in FIG. 2, the optical head 27 includes a condenser lens 17, a condenser lens holder 16a for holding the condenser lens 17, and an optical head base 28. The condenser lens holder 16a has a base. Four support members 29 fixed to the bottom surface of the portion 28 and the elastic members 18a connected thereto;
For example, it is supported by a leaf spring. With this support structure, the condenser lens holder 16a is constrained in a direction parallel to the plane of the master (X and Y directions in the figure) and is movable in the optical axis direction of the condenser lens 17 (Z direction in the figure).
【００２６】図３に示すように、集光レンズホルダ１６
ａはその上部にピエゾ素子３３を介してリレーレンズ１
５を支持するリレーレンズホルダ３２を備える。ここ
で、ピエゾ素子３３は集光レンズ１７に対するリレーレ
ンズ１５の光軸方向位置を変更してリレーレンズ１５の
焦点位置を微調整する。As shown in FIG. 3, the condenser lens holder 16
a is a relay lens 1 on the upper side via a piezo element 33.
5 is provided. Here, the piezo element 33 finely adjusts the focal position of the relay lens 15 by changing the position of the relay lens 15 in the optical axis direction with respect to the condenser lens 17.
【００２７】リレーレンズホルダ３２は弾性部材１８ｂ
を介してベース部２８の支持部材２９と連結されてい
る。リレーレンズホルダ３２上には、ボイスコイル型ア
クチュエータ１４０を構成するボビン３４ｅが固着され
ており、アクチュエータ１４０の他の構成要素であるコ
イル３４ｆ、永久磁石３５ｂ、ヨーク３６ｃ，３６ｄは
ベース部２８に装着されている。これにより、アクチュ
エータ１４０が駆動すると、集光レンズ１７及びリレー
レンズ１５がベース部２８に対して光軸方向（図面上下
方向）に移動することになる。アクチュエータ１４０の
駆動は、撮像管２４のディスプレイ２６によるスポット
像２６ａ，２６ｂの観察結果に基づいて制御部８８を通
じて行われる。これにより、集光レンズ１７の端面と原
盤１９表面との間隔が適正な値に調整される。集光レン
ズ１７の端面と原盤１９表面との間隔は、集光レンズ１
７の焦点距離に応じて、一般に、数μｍ〜数十μｍに調
整される。The relay lens holder 32 includes an elastic member 18b.
Is connected to the support member 29 of the base portion 28 via the. A bobbin 34e constituting a voice coil type actuator 140 is fixed on the relay lens holder 32, and a coil 34f, a permanent magnet 35b, and yokes 36c, 36d, which are other components of the actuator 140, are mounted on the base 28. Have been. Thus, when the actuator 140 is driven, the condenser lens 17 and the relay lens 15 move in the optical axis direction (vertical direction in the drawing) with respect to the base portion 28. The actuator 140 is driven through the control unit 88 based on the observation result of the spot images 26a and 26b by the display 26 of the imaging tube 24. Thereby, the distance between the end face of the condenser lens 17 and the surface of the master 19 is adjusted to an appropriate value. The distance between the end surface of the condenser lens 17 and the surface of the master 19 is
In general, the distance is adjusted to several μm to several tens μm according to the focal length of 7.
【００２８】集光レンズ１７は球の一部を切断して形成
された半球型レンズである。レンズ１７の切断面、すな
わち、レンズ１７の出射面１７ａは、水中に含まれる気
泡を出射面表面に停めないようにするために凸型の曲面
に加工するのが好ましい。レンズの形状及びレンズの切
断面の位置は、特に限定されないが、集光レンズ１７が
無収差レンズとなるように加工することもできる。集光
レンズ１７の材料は、特に限定されないが、Ｃ、Ｓｉ
Ｃ、Ｓｉ3 Ｎ4 、ＺｒＯ2 、Ｔａ2 Ｏ5 、ＺｎＳ、Ｔｉ
Ｏ2 、または高屈折率ガラス及び一般の光学ガラスや水
晶等を使用することができる。The condenser lens 17 is a hemispherical lens formed by cutting a part of a sphere. The cut surface of the lens 17, that is, the exit surface 17 a of the lens 17 is preferably processed into a convex curved surface in order to prevent bubbles contained in water from stopping on the exit surface surface. The shape of the lens and the position of the cut surface of the lens are not particularly limited. However, the condensing lens 17 may be processed so as to be an aberration-free lens. The material of the condenser lens 17 is not particularly limited, but may be C, Si
C, Si 3 N 4 , ZrO 2 , Ta 2 O 5 , ZnS, Ti
O 2 , high refractive index glass, general optical glass, quartz, or the like can be used.
【００２９】次に、図４を用いて、図１に示した水／現
像液供給装置２２０の構造の詳細を説明する。水／現像
液供給装置２２０は、主に、アルカリ液である現像液及
び水をそれぞれ貯蔵するタンク８２，８４と、それらの
タンク内部を加圧する窒素ポンプ９２と、タンク８２，
８４からノズル２１０に水／現像液を供給する配管８
０，８０ａ，８０ｂ及び制御部８８等から構成されてい
る。水／現像液を吐出するノズル２１０は配管８０に接
続され、その途中から現像液タンク８２に接続する配管
８０ａと水タンク８４に接続する配管８０ｂに分岐す
る。配管８０ａ及び８０ｂにはそれぞれ電磁バルブ８６
ａ及び８６ｂが装着されており、その開閉は制御部８８
により制御される。配管８０の途中には流量コントロー
ルバルブ９０が装着され、ノズル２１０から吐出される
液体の流量が制御部８８を通じて制御される。現像液タ
ンク８２と水タンク８４にはそれぞれ窒素ポンプ９２か
ら高圧窒素が供給され、タンク内部が加圧されることに
よってそれらのタンク８２，８４から現像液及び水が配
管８０ａ，８０ｂに流出される。窒素ポンプ９２もまた
制御部８８により制御されている。なお、制御部８８
は、図１に示した原盤露光装置の露光動作を一括して管
理している制御部と共通している。Next, the details of the structure of the water / developer supply device 220 shown in FIG. 1 will be described with reference to FIG. The water / developing solution supply device 220 mainly includes tanks 82 and 84 for storing a developing solution and water, respectively, which are alkaline solutions, a nitrogen pump 92 for pressurizing the inside of these tanks,
Piping 8 for supplying water / developer from nozzle 84 to nozzle 210
0, 80a, 80b, a control unit 88, and the like. The nozzle 210 for discharging the water / developer is connected to the pipe 80, and branches from the middle into a pipe 80 a connected to the developer tank 82 and a pipe 80 b connected to the water tank 84. An electromagnetic valve 86 is provided in each of the pipes 80a and 80b.
a and 86b are mounted, and the opening and closing of the
Is controlled by A flow control valve 90 is mounted in the middle of the pipe 80, and the flow rate of the liquid discharged from the nozzle 210 is controlled through the control unit 88. High-pressure nitrogen is supplied from a nitrogen pump 92 to the developer tank 82 and the water tank 84, respectively, and when the inside of the tank is pressurized, the developer and water are discharged from these tanks 82 and 84 to the pipes 80a and 80b. . The nitrogen pump 92 is also controlled by the control unit 88. The control unit 88
Are common to the control unit that collectively manages the exposure operation of the master exposure apparatus shown in FIG.
【００３０】図４に示したような現像液／水供給装置２
２０の動作を以下に説明する。原盤露光装置において露
光が行われる際、制御部８８は水タンク８４側の電磁バ
ルブ８６ｂを開放して水タンク８４内の水を配管８０に
供給する。制御部８８はまた流量コントロールバルブ９
０を制御して、配管８０中を流れる水の流量を調節し、
適量の水をノズル２１０から吐出させる。これにより、
露光中は、集光レンズ１７と原盤表面のフォトレジスト
２０との間隙が水で充満され、集光レンズ１７が液浸レ
ンズとして機能する。また、露光前または露光中にフォ
トレジスト膜２０上に付着した塵等がノズルからの水に
より流し出されるために、塵等の付着物による露光精度
の低下を防止することもできる。なお、ノズル２１０か
ら吐出される水量は、集光レンズ１７と原盤表面のフォ
トレジスト２０との間隙が常に水で充満される量が必要
であるが、原盤上での水の流動により集光レンズ１７と
原盤表面のフォトレジスト２０との間の維持された間隔
を変動させないようにするのが望ましい。原盤上での水
の流れを安定させるためにノズル２１０の吐出方向を水
平方向にしてもよい。また、集光レンズホルダ１６ａに
よる水の抵抗を減らすために集光レンズホルダ１６ａの
底面の端部が曲面を形成するようにしてもよい。A developer / water supply device 2 as shown in FIG.
The operation of 20 is described below. When exposure is performed in the master exposure apparatus, the control unit 88 opens the electromagnetic valve 86 b on the water tank 84 side and supplies the water in the water tank 84 to the pipe 80. The control unit 88 also controls the flow control valve 9.
0 to control the flow rate of water flowing through the pipe 80,
An appropriate amount of water is discharged from the nozzle 210. This allows
During the exposure, the gap between the condenser lens 17 and the photoresist 20 on the surface of the master is filled with water, and the condenser lens 17 functions as an immersion lens. Further, since dust or the like adhering to the photoresist film 20 before or during the exposure is flushed out by the water from the nozzle, it is possible to prevent a decrease in the exposure accuracy due to the adhering matter such as dust. The amount of water discharged from the nozzle 210 needs to be such that the gap between the condenser lens 17 and the photoresist 20 on the surface of the master is always filled with water. It is desirable not to vary the maintained spacing between 17 and the photoresist 20 on the master surface. The discharge direction of the nozzle 210 may be horizontal in order to stabilize the flow of water on the master. Further, in order to reduce the resistance of water caused by the condenser lens holder 16a, the end of the bottom surface of the condenser lens holder 16a may form a curved surface.
【００３１】原盤２０の露光が終了すると、制御部８８
は電磁バルブ８６ｂを閉鎖するとともに、現像液タンク
８２側の電磁バルブ８６ａを開放することによってノズ
ル２１０から吐出される液を水から現像液に切り換え
る。流量コントロールバルブ９０は制御部８８の制御下
で現像液の流量を調整し、適切な流速の現像液をノズル
２１０から吐出させる。こうして、感光した原盤２０の
現像動作が行われる。When the exposure of the master 20 is completed, the control unit 88
By closing the electromagnetic valve 86b and opening the electromagnetic valve 86a on the developer tank 82 side, the liquid discharged from the nozzle 210 is switched from water to the developer. The flow control valve 90 adjusts the flow rate of the developing solution under the control of the control unit 88 and discharges the developing solution at an appropriate flow rate from the nozzle 210. In this manner, the developing operation of the exposed master 20 is performed.
【００３２】図４に示した装置２２０では、現像液と水
とを電磁バルブ８６ａ，ｂを切り換えることによって同
一ノズル２１０により供給することができため、露光終
了後、感光した原盤を移動することなくその場合で現像
することができる。In the apparatus 220 shown in FIG. 4, since the developer and water can be supplied by the same nozzle 210 by switching the electromagnetic valves 86a and 86b, the exposed master is not moved after the exposure is completed. In that case, development can be performed.
【００３３】さらに、図１に示した光ヘッド２７、撮像
管２４及びディスプレイ２６は、露光・現像が終了した
後に原盤上に形成されたピット及び溝の幅や深さ等を検
査するための検査装置として用いることも可能である。
このように原盤露光装置を構成することにより、従来の
原盤露光装置を、露光・現像・検査が可能な一体型装置
とすることができる。Further, the optical head 27, the imaging tube 24 and the display 26 shown in FIG. 1 are used for inspecting the width and depth of the pits and grooves formed on the master after the exposure and development are completed. It can also be used as a device.
By configuring the master exposure apparatus in this way, the conventional master exposure apparatus can be made an integrated apparatus capable of exposure, development, and inspection.
【００３４】〔第２実施例〕本発明に従う原盤露光装置
の第２実施例を図５を用いて説明する。図５は、図３に
示した原盤露光装置の光ヘッド２７の変形例を示す断面
図である。図５に示した光ヘッド部は、集光レンズ１７
を支持する集光レンズホルダ１６ｂの構造が図３に示し
た集光レンズホルダ１６ａと異なる以外は、実施例１の
原盤露光装置１００の光ヘッド部と同様の構造を有す
る。それゆえ、実施例１の原盤露光装置１００と共通す
る部材及び構造については同一の符号を付してその説明
を省略する。また、図５には、集光レンズホルダ１６ｂ
の構造を分かり易くするために、ノズル２１０から吐出
された水の図示を省略してある。[Second Embodiment] A second embodiment of a master exposure apparatus according to the present invention will be described with reference to FIG. FIG. 5 is a sectional view showing a modification of the optical head 27 of the master exposure apparatus shown in FIG. The optical head shown in FIG.
The configuration is the same as that of the optical head section of the master exposure apparatus 100 of the first embodiment, except that the structure of the condenser lens holder 16b that supports the optical disc is different from that of the condenser lens holder 16a shown in FIG. Therefore, members and structures common to the master exposure apparatus 100 according to the first embodiment are denoted by the same reference numerals, and description thereof is omitted. FIG. 5 shows the condenser lens holder 16b.
The illustration of the water discharged from the nozzle 210 is omitted for easy understanding of the structure.
【００３５】集光レンズホルダ１６ｂは、その中央に集
光レンズ１７を支持し、ホルダ底部は外側に向かうに従
って原盤１９との間隔が広くなるような錐面を形成して
いる。集光レンズホルダ１６ｂの内部には、外部から集
光レンズ１７に通じる空洞（光路）１６ｆ，１６ｇが集
光レンズ１７の光軸を挟んで対称に形成されおり、一方
の光路１６ｆの開口部（光入射口）には光ファイバ４０
が装着され、他方の光路１６ｇの開口部（光出射口）に
は、スリット４１ａ及び検出部４１ｂを備えたレンズ位
置検出器４１が装着されている。レンズ位置検出器４１
の検出部４１ｂは前述のボイスコイルモータ１４０を制
御する制御部８８に接続されている。すなわち、実施例
１の原盤露光装置では、ボイスコイルモータ１４０の制
御はディスプレイ２６による観察結果に基づいて行って
いたが、この実施例ではレンズ位置検出器４１からの検
出信号に基づいて行う。The condenser lens holder 16b supports a condenser lens 17 at the center thereof, and the bottom of the holder forms a conical surface such that the distance from the master 19 becomes wider toward the outside. Inside the condenser lens holder 16b, cavities (optical paths) 16f and 16g communicating with the condenser lens 17 from the outside are formed symmetrically with respect to the optical axis of the condenser lens 17, and the opening of one optical path 16f ( Optical fiber 40 at the light entrance)
Is mounted, and a lens position detector 41 having a slit 41a and a detection unit 41b is mounted in an opening (light emission port) of the other optical path 16g. Lens position detector 41
Is connected to the control unit 88 for controlling the voice coil motor 140 described above. That is, in the master exposure apparatus of the first embodiment, the control of the voice coil motor 140 is performed based on the observation result by the display 26. In this embodiment, the control is performed based on the detection signal from the lens position detector 41.
【００３６】光ファイバ４０から射出された光は空洞
（光路）１６ｆを通って集光レンズ１７に入射した後、
原盤１９により反射されて再び集光レンズ１７及び空洞
（光路）１６ｇを通ってレンズ位置検出器４１に入射す
る。レンズ位置検出器４１は、検出部４１ａと４１ｂに
分割されており、集光レンズ１７の端面１７ｃと原盤表
面２０との間隔が予め定めた適正値のとき、原盤からの
反射光の中心がレンズ位置検出器４１の検出部４１ａと
４１ｂの中間に配置するように設計されている。すなわ
ち、このとき検出部４１ａと４１ｂの前記反射光の光量
が等しくなる。それゆえ、露光中、すなわち、ノズル２
１０から水が吐出されて原盤表面のフォトレジスト２０
上を水が流動しているときに、集光レンズ１７の端面１
７ｃと原盤のフォトレジスト２０との間隔が適正な間隔
になければ、検出部４１ａと４１ｂから出てくる反射光
検出出力のバランスがくずれ、制御部ではこれに応答し
てボイスコイル型アクチュエータ１４０を駆動し集光レ
ンズ１７と原盤１９との間隔が適正な値に修正されるよ
うにする。また、水などの液体を集光レンズ１７とフォ
トレジスト表面２０との間に充満させた場合、フォトレ
ジストと前記液体との屈折率が近似していれば、光ファ
イバー４０から出た光がフォトレジスト表面２０で反射
される強度が小さくなり位置光検出部で検出される光量
が減り、サーボが不安定になることがある。このような
場合には、フォトレジストと原盤の間にアルミ等の反射
膜を形成して反射光量を増すこともできる。The light emitted from the optical fiber 40 enters the condenser lens 17 through a cavity (optical path) 16f.
The light is reflected by the master 19 and again enters the lens position detector 41 through the condenser lens 17 and the cavity (optical path) 16g. The lens position detector 41 is divided into detectors 41a and 41b. When the distance between the end face 17c of the condenser lens 17 and the master surface 20 is a predetermined appropriate value, the center of the reflected light from the master The position detector 41 is designed to be arranged between the detection units 41a and 41b. That is, at this time, the amount of the reflected light of the detection units 41a and 41b becomes equal. Therefore, during exposure, ie, nozzle 2
Water is discharged from 10 and the photoresist 20 on the surface of the master is
When water is flowing over the end face 1 of the condenser lens 17
If the distance between 7c and the photoresist 20 of the master is not at an appropriate distance, the balance of the reflected light detection output from the detection units 41a and 41b is lost, and the control unit responds to this by causing the voice coil type actuator 140 to respond. The gap between the condenser lens 17 and the master 19 is driven to be corrected to an appropriate value. When a liquid such as water is filled between the condenser lens 17 and the photoresist surface 20, if the refractive index between the photoresist and the liquid is similar, the light emitted from the optical fiber 40 will The intensity reflected by the surface 20 becomes small, the amount of light detected by the position light detection unit decreases, and the servo may become unstable. In such a case, a reflection film such as aluminum can be formed between the photoresist and the master to increase the amount of reflected light.
【００３７】図５に示した原盤露光装置は、レンズ位置
検出器４１を備えるので集光レンズ１７と原盤との間隔
が常に適正な値になるように制御部８８を通じて自動的
に調整される。従って、露光中に原盤表面に供給された
水の流量の変動等により集光レンズホルダ１６ｂの上下
方向の揺れが生じた場合でも、揺れを静めて集光レンズ
１７と原盤との間隔を適正な値に収束することができ
る。Since the master exposure apparatus shown in FIG. 5 includes the lens position detector 41, the distance between the condenser lens 17 and the master is automatically adjusted through the control unit 88 so that the distance always becomes an appropriate value. Therefore, even if the vertical movement of the condenser lens holder 16b occurs due to a change in the flow rate of water supplied to the surface of the master during the exposure, the vibration is calmed down and the distance between the condenser lens 17 and the master is properly adjusted. Can converge to a value.
【００３８】以上、本発明を実施例により説明してきた
が、本発明は特許請求の範囲に記載した範囲で実施例の
種々の変形及び改良を含むことができる。上記例では、
原盤中央近傍に水／現像液が吐出されるようにノズルを
配置したが、ノズルの位置は原盤の回転によって原盤と
集光レンズとの間隙に水を充満させることができる限り
任意の位置に配置することができる。例えば、原盤の半
径方向において集光レンズと同一位置であり且つ原盤の
回転方向前方にノズルを配置することができる。またノ
ズルからの液体の吐出方向はノズルの向きを変更するこ
とによって任意の方向に調整することができる。Although the present invention has been described with reference to the embodiment, the present invention can include various modifications and improvements of the embodiment within the scope of the claims. In the above example,
The nozzle is arranged near the center of the master so that water / developer is discharged, but the nozzle is located at any position as long as the gap between the master and the condenser lens can be filled with water by rotation of the master. can do. For example, the nozzle can be arranged at the same position as the condenser lens in the radial direction of the master and in front of the master in the rotation direction. Further, the direction in which the liquid is ejected from the nozzle can be adjusted to an arbitrary direction by changing the direction of the nozzle.
【００３９】上記実施例ではノズルを用いて水を原盤上
に吐出させる構成としたが、原盤外周に沿って壁面を設
けることによって原盤を底部とする容器を形成し、容器
内に一定量の水を蓄えることによって原盤と集光レンズ
との間隙に水を充満させることもできる。このようにす
れば、ノズルから吐出する水の量を低減し、あるいは、
露光前にのみノズルから水を容器内に充満させ、水の流
動による集光レンズホルダの揺れを抑制することができ
る。また、ノズル自体を省略して、上記のような容器構
造だけを採用してもよい。すなわち、原盤と集光レンズ
との間隙に水を介在させることができる方法であれば、
任意の方法を用いることができる。In the above embodiment, the nozzle is used to discharge water onto the master. However, by providing a wall along the outer periphery of the master to form a container having the master as a bottom, a predetermined amount of water is contained in the container. , The gap between the master and the condenser lens can be filled with water. This reduces the amount of water discharged from the nozzle, or
Water can be filled in the container from the nozzle only before exposure, and the fluctuation of the condenser lens holder due to the flow of water can be suppressed. Further, the nozzle itself may be omitted, and only the above-described container structure may be employed. In other words, if water can be interposed in the gap between the master and the condenser lens,
Any method can be used.
【００４０】また、上記原盤露光装置は、光ヘッド部を
現像処理時に原盤から退避させることができるような退
避機構あるいは光ヘッド部に現像液が付着することを防
止するための光ヘッドカバーを設けることができる。か
かる退避機構または光ヘッドカバーを設けることによっ
て光ヘッド部をアルカリ液である現像液から保護し、レ
ンズ及びレンズホルダの腐食を防止することができる。In the master exposure apparatus, a retracting mechanism capable of retracting the optical head from the master during the development processing or an optical head cover for preventing the developer from adhering to the optical head is provided. Can be. By providing such a retracting mechanism or the optical head cover, the optical head portion can be protected from the developing solution which is an alkaline solution, and the lens and the lens holder can be prevented from being corroded.
【００４１】本発明の原盤露光装置は、コンパクトディ
スク、ＣＤ−ＲＯＭ、デジタルビデオディスク等の再生
専用の光記録媒体、ＣＤ−Ｒのような追記型記録媒体、
光磁気ディスクのような書換え型光記録媒体のみならず
ハードディスク等に使用されるエンボスピットタイプの
磁気記録媒体を製造するために使用することができる。The master exposure apparatus according to the present invention includes a read-only optical recording medium such as a compact disk, a CD-ROM, and a digital video disk, a write-once recording medium such as a CD-R,
It can be used for manufacturing not only rewritable optical recording media such as magneto-optical disks but also embossed pit type magnetic recording media used for hard disks and the like.
【００４２】[0042]
【発明の効果】本発明の原盤露光装置は、集光レンズと
原盤との間に液体を介在させることによって集光レンズ
は液浸レンズとして機能することができるため、露光解
像力を一層向上することができ、それによって極めて微
小なピット、例えば、０．２μｍ以下のピットが形成さ
れる高密度記録媒体用の原盤を製造することも可能にな
る。According to the master exposure apparatus of the present invention, since the condensing lens can function as an immersion lens by interposing a liquid between the condensing lens and the master, the exposure resolution can be further improved. Accordingly, it becomes possible to manufacture a master for a high-density recording medium in which extremely minute pits, for example, pits of 0.2 μm or less are formed.
【００４３】また、本発明の原盤露光装置は、現像液供
給手段を有するため露光後のプロセスに従来使用されて
いた現像装置が不要となり、露光・現像プロセスを簡略
化することが可能になる。特に、現像液供給手段を、上
記光学素子と原盤との間に介在させる液体または現像液
を原盤上に吐出するためのノズルと該ノズルに該液体ま
たは現像液を供給するための供給装置と上記ノズルへの
該液体または現像液の供給を切り換えるための切り換え
装置とから構成することにより、ノズルから現像液と露
光用の液体とを切り換えて吐出することができるため、
一層簡単な構造で現像機能を原盤露光装置に組み込むこ
とができる。Further, since the master exposure apparatus of the present invention has a developing solution supply means, the development apparatus conventionally used in the post-exposure process becomes unnecessary, and the exposure and development process can be simplified. In particular, the developing solution supply means includes a nozzle for discharging a liquid or a developing solution interposed between the optical element and the master onto the master, a supply device for supplying the liquid or the developing solution to the nozzle, and Since the apparatus is configured with a switching device for switching the supply of the liquid or the developing solution to the nozzle, the developing solution and the exposure liquid can be switched and discharged from the nozzle,
The developing function can be incorporated into the master exposure apparatus with a simpler structure.
【００４４】本発明の原盤露光装置は、さらに、露光及
び現像された原盤のピットや溝の幅や深さ等を検査する
ための検査装置を備えることにより、原盤露光装置によ
り露光・現像・検査が一つの装置で可能となり、設備コ
ストの削減及びスタンパ製造までのプロセスの簡略化を
実現することができる。The master exposure apparatus of the present invention further includes an inspection apparatus for inspecting the width and depth of the pits and grooves of the exposed and developed master, thereby allowing the master exposure apparatus to perform exposure, development, and inspection. Can be realized by one apparatus, and reduction of equipment cost and simplification of a process up to stamper manufacturing can be realized.
【００４５】本発明の原盤露光方法に従えば、レーザ光
を集光するための光学素子と原盤との間に液体を介在さ
せながら原盤露光を行うために、光学素子を液浸レンズ
として機能させることができるとともに露光中に原盤上
に付着した塵等を流動除去することができる。このため
光ヘッドの露光解像力及び露光精度を向上させることが
可能になる。According to the master exposure method of the present invention, the optical element functions as a liquid immersion lens for performing the master exposure while interposing a liquid between the optical element for condensing the laser beam and the master. In addition, dust and the like adhering to the master during exposure can be removed by flowing. Therefore, it is possible to improve the exposure resolution and exposure accuracy of the optical head.
【図１】本発明に従う原盤露光装置の全体構成を説明す
る概念図である。FIG. 1 is a conceptual diagram illustrating an entire configuration of a master exposure apparatus according to the present invention.
【図２】図１に示した本発明に従う原盤露光装置の光ヘ
ッドの第１実施例を下方から見た斜視図である。FIG. 2 is a perspective view of the first embodiment of the optical head of the master exposure apparatus shown in FIG. 1 when viewed from below.
【図３】図１に示した本発明に従う原盤露光装置の光ヘ
ッドの第１実施例を示す断面図である。FIG. 3 is a sectional view showing a first embodiment of the optical head of the master exposure apparatus shown in FIG. 1 according to the present invention;
【図４】本発明の第１実施例及び第２実施例に従う原盤
露光装置のノズル及び水／現像液供給装置の構造を説明
する概念図である。FIG. 4 is a conceptual diagram illustrating the structure of a nozzle and a water / developer supply device of a master exposure apparatus according to a first embodiment and a second embodiment of the present invention.
【図５】本発明の第２の実施例に従う原盤露光装置の光
ヘッドの断面図である。FIG. 5 is a sectional view of an optical head of a master exposure apparatus according to a second embodiment of the present invention.
【図６】本発明の原盤露光装置の集光レンズが液浸レン
ズとして機能することを説明する図である。FIG. 6 is a diagram illustrating that the condenser lens of the master exposure apparatus of the present invention functions as a liquid immersion lens.
３ ビームスプリッタ ７ ＡＯ変調器 ９ ＡＯ偏向器 １６ａ，ｂ 集光レンズホルダ １７ 集光レンズ １８ 弾性部材 ２０ フォトレジスト ２７ 光ヘッド ２８ 光ヘッドベース部 ２９ 支持部材 ８２ 現像液タンク ８４ 水タンク ９２ 窒素ポンプ １００ 原盤露光装置 １３０ ボイスコイル型アクチュエータ ２００ 水 ２１０ 水／現像液吐出ノズル Reference Signs List 3 beam splitter 7 AO modulator 9 AO deflector 16a, b condenser lens holder 17 condenser lens 18 elastic member 20 photoresist 27 optical head 28 optical head base 29 support member 82 developer tank 84 water tank 92 nitrogen pump 100 Master exposure apparatus 130 Voice coil type actuator 200 Water 210 Water / developer discharge nozzle
Claims (9)
用原盤にレーザ光を集光して照射することによりフォト
レジストを所望のパターンに感光する原盤露光装置にお
いて、 上記レーザ光を上記原盤表面に集光するための光学素子
と、 上記光学素子と上記原盤表面との間の光路に液体を介在
させるための手段とを備えることを特徴とする原盤露光
装置。1. A master exposure apparatus for exposing a photoresist to a desired pattern by converging and irradiating a laser beam onto a recording medium manufacturing master coated with a photoresist, wherein the laser beam is collected on the master surface. A master exposure apparatus comprising: an optical element for emitting light; and means for interposing a liquid in an optical path between the optical element and the surface of the master.
ることを特徴とする請求項１記載の原盤露光装置。2. The master exposure apparatus according to claim 1, wherein the optical element functions as a liquid immersion lens.
盤上に液体を吐出するためのノズルと、該ノズルに液体
を供給するための液体供給装置とから構成されているこ
とを特徴とする請求項１または２に記載の原盤露光装
置。3. The method according to claim 1, wherein the means for interposing the liquid includes a nozzle for discharging the liquid onto the master, and a liquid supply device for supplying the liquid to the nozzle. The master exposure apparatus according to claim 1.
の手段を有することを特徴とする請求項１〜３のいずれ
か一項に記載の原盤露光装置。4. The master exposure apparatus according to claim 1, further comprising means for supplying a developer onto the master.
段が、上記原盤上に上記液体または現像液を吐出するた
めのノズルと、該ノズルに上記液体または現像液を供給
するための供給装置と、該ノズルへの上記液体または現
像液の供給を切り換えるための切り換え装置とから構成
されていることを特徴とする請求項４に記載の原盤露光
装置。5. A means for supplying the developer onto the master, comprising: a nozzle for discharging the liquid or the developer onto the master; and a supply for supplying the liquid or the developer to the nozzle. 5. The master exposure apparatus according to claim 4, further comprising a device and a switching device for switching the supply of the liquid or the developer to the nozzle.
するための検査装置を備えることを特徴とする請求項５
に記載の原盤露光装置。6. An inspection apparatus for inspecting an exposed and developed master disc.
A master exposure apparatus according to item 1.
学素子を含む光ヘッドであることを特徴とする請求項６
に記載の原盤露光装置。7. The inspection apparatus according to claim 6, wherein the inspection apparatus is an optical head including the optical element of a master exposure apparatus.
A master exposure apparatus according to item 1.
求項１〜７のいずれか一項記載の原盤露光装置。8. The master exposure apparatus according to claim 1, wherein the liquid is water.
用原盤にレーザ光を集光して照射することによりフォト
レジストを所望のパターンに感光する原盤露光方法にお
いて、 上記レーザ光を集光するための光学素子と原盤との間に
液体を介在させながら原盤露光を行うことを特徴とする
原盤露光方法。9. A method for exposing a photoresist to a desired pattern by converging and irradiating a laser beam onto a master for recording medium production coated with a photoresist, the method comprising: A master exposure method, wherein the master exposure is performed while a liquid is interposed between the optical element and the master.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9076450A JPH10255319A (en) | 1997-03-12 | 1997-03-12 | Master disk exposure device and method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9076450A JPH10255319A (en) | 1997-03-12 | 1997-03-12 | Master disk exposure device and method therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10255319A true JPH10255319A (en) | 1998-09-25 |
Family
ID=13605497
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9076450A Pending JPH10255319A (en) | 1997-03-12 | 1997-03-12 | Master disk exposure device and method therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10255319A (en) |
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-
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- 1997-03-12 JP JP9076450A patent/JPH10255319A/en active Pending
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| US10466595B2 (en) | 2003-05-13 | 2019-11-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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| JP2010010703A (en) * | 2003-06-13 | 2010-01-14 | Nikon Corp | Substrate stage, exposure device, and device manufacturing method |
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| WO2004112108A1 (en) * | 2003-06-13 | 2004-12-23 | Nikon Corporation | Exposure method, substrate stage, exposure apparatus and method for manufacturing device |
| JP2013016839A (en) * | 2003-06-13 | 2013-01-24 | Nikon Corp | Substrate stage, exposure device, and device manufacturing method |
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| EP1635382A4 (en) * | 2003-06-19 | 2008-01-30 | Nikon Corp | Exposure device and device producing method |
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| EP1635382A1 (en) * | 2003-06-19 | 2006-03-15 | Nikon Corporation | Exposure device and device producing method |
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| EP1643543B1 (en) * | 2003-07-09 | 2010-11-24 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
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| JP2016053734A (en) * | 2003-07-09 | 2016-04-14 | 株式会社ニコン | Exposure device and method for producing device |
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| JP2011252154A (en) * | 2003-08-20 | 2011-12-15 | Koninkl Philips Electronics Nv | Non-leaching adhesive system and its use in liquid immersion objective |
| KR101305354B1 (en) * | 2003-08-20 | 2013-09-06 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | Non-leaching adhesive system |
| US7935213B2 (en) | 2003-08-20 | 2011-05-03 | Koninklijke Philips Electronics N.V. | Non-leaching adhesive system and its use in a liquid immersion objective |
| JP2007502882A (en) * | 2003-08-20 | 2007-02-15 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Non-leaching adhesive system and its use in immersion objectives |
| US10175584B2 (en) | 2003-08-26 | 2019-01-08 | Nikon Corporation | Optical element and exposure apparatus |
| JP2005077533A (en) * | 2003-08-28 | 2005-03-24 | Nikon Corp | Optical element, lens system, and projection aligner |
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| KR101323396B1 (en) * | 2003-09-29 | 2013-10-29 | 가부시키가이샤 니콘 | Exposure apparatus, exposure method, and device manufacturing method |
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| US7643127B2 (en) | 2004-12-07 | 2010-01-05 | Asml Netherlands B.V. | Prewetting of substrate before immersion exposure |
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| US7196770B2 (en) | 2004-12-07 | 2007-03-27 | Asml Netherlands B.V. | Prewetting of substrate before immersion exposure |
| US8860926B2 (en) | 2004-12-08 | 2014-10-14 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US8115905B2 (en) | 2004-12-08 | 2012-02-14 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7365827B2 (en) | 2004-12-08 | 2008-04-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US9740106B2 (en) | 2004-12-10 | 2017-08-22 | Asml Netherlands B.V. | Substrate placement in immersion lithography |
| US9182222B2 (en) | 2004-12-10 | 2015-11-10 | Asml Netherlands B.V. | Substrate placement in immersion lithography |
| US10345711B2 (en) | 2004-12-10 | 2019-07-09 | Asml Netherlands B.V. | Substrate placement in immersion lithography |
| US7352440B2 (en) | 2004-12-10 | 2008-04-01 | Asml Netherlands B.V. | Substrate placement in immersion lithography |
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| US8913225B2 (en) | 2004-12-28 | 2014-12-16 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US8013978B2 (en) | 2004-12-28 | 2011-09-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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| US9772565B2 (en) | 2005-02-10 | 2017-09-26 | Asml Netherlands B.V. | Immersion liquid, exposure apparatus, and exposure process |
| US9454088B2 (en) | 2005-02-10 | 2016-09-27 | Asml Netherlands B.V. | Immersion liquid, exposure apparatus, and exposure process |
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