WO1999049504A1 - Projection exposure method and system - Google Patents

Projection exposure method and system Download PDF

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Publication number
WO1999049504A1
WO1999049504A1 PCT/JP1999/001262 JP9901262W WO9949504A1 WO 1999049504 A1 WO1999049504 A1 WO 1999049504A1 JP 9901262 W JP9901262 W JP 9901262W WO 9949504 A1 WO9949504 A1 WO 9949504A1
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WO
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Patent type
Prior art keywords
liquid
substrate
direction
projection exposure
projection
Prior art date
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PCT/JP1999/001262
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French (fr)
Japanese (ja)
Inventor
Yoshio Fukami
Nobutaka Magome
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Nikon Corporation
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece
    • G03F7/70241Optical aspects of refractive systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece
    • G03F7/70341Immersion
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/708Construction of apparatus, e.g. environment, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/708Construction of apparatus, e.g. environment, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875Temperature
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/708Construction of apparatus, e.g. environment, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891Temperature

Abstract

A projection exposure method capable of keeping a liquid (7) filled between a projection optical system (PL) and a wafer (W) even while the wafer (W) is being moved when a liquid immersion method is used to conduct an exposure, wherein a discharge nozzle (21a) and inflow nozzles (23a, 23b) are disposed so as to hold a lens (4) at the tip end of the projection optical system (PL) in an X direction. When the wafer (W) is moved in a -X direction by an XY stage (10), a liquid (7) controlled to a preset temperature is supplied from a liquid supply device (5) via a supply pipe (21) and the discharge nozzle (21a) so as to fill the portion between the lens (4) and the surface of the wafer (W) and the liquid (7) is recovered from the surface of the wafer (W) by a liquid supply device (6) via a recovery pipe (23) and the inflow nozzles (23a, 23b), the supply amount and recovery amount of the liquid (7) being regulated according to a moving speed of the wafer (W).

Description

W 99/49504 PT / JP

Projection exposure method and apparatus technology field

The present invention is, for example, semiconductor devices, imaging devices (CCD, etc.), a liquid crystal display element, or a mask pattern in about lithographic Ye for producing de Ming device of head, etc., to a thin film magnetic photosensitive substrate Tagami projection exposure method used for transfer, and to a device, more particularly to a projection exposure method and apparatus using the liquid immersion method. BACKGROUND

When manufacturing a semiconductor element or the like, the image of the pattern of the reticle as a mask through a projection optical system, in each shot area on the wafer (or glass plate) that register Bok is applied as a photosensitive substrate projection exposure optical system is used to transfer. As a conventional projection exposure apparatus, step 'en de - although a reduction projection type exposure apparatus of repeat type (Sutetsupa) was often used recently in step • and-scan performing synchronous scanning to expose the reticle and the wafer also projection exposure apparatus of the system has been attracting attention.

Resolution of the projection optical system provided in the projection exposure apparatus, as the exposure wavelength used becomes shorter, also increases the larger the numerical aperture of the projection optical system. Therefore, the exposure wavelength used in the projection exposure apparatus with the miniaturization of the integrated circuit, is shortened year by year wavelength, it has increased numerical aperture of projection optical systems. Their to mainstream exposure wavelength currently is, K r ​​F excimer but Ru 2 4 8 nm der monodentate column is 1 9 3 nm also practical use of further short wavelength A r F excimer monodentate fold. Further, when exposure is performed, similarly to the resolution depth of focus (DOF) is also important. The resolution R, and the depth of focus (5 is expressed by the following.

R = k, 'λ ΝΑ (1)

δ = k 2 · λΖΝΑ 2 ( 2)

Here, lambda is the exposure wavelength, Nyuarufa is the numerical aperture of the projection optical system, k,, k 2 is a process factor. (1) and (2), in order to enhance the resolution R, then shorten the exposure wavelength lambda, and the numerical aperture ΝΑ increased, it can be seen that the depth of focus <5 becomes narrower. In conventionally projection exposure apparatus, although performing exposure crowded combined surface of the wafer to the image plane of the projection optical system in the autofocus mode, the depth of focus δ to do so somewhat broader desirably. Therefore, conventionally also the phase shift reticle method, the modified illumination method, a multilayer resist method, proposed to increase the substantial depth of focus have been made.

In the conventional projection exposure apparatus as described above, shortening the wavelength of the exposure light, and by increasing the numerical aperture of the projection optical science system, it has been the depth of focus summer narrow. Then, a possibility that in order to cope with further high integration of a semiconductor integrated circuit, further shorter wavelength of the exposure wavelength has also been studied, this remains in the too narrow depth of focus, insufficient margin in exposure light operation there is.

Therefore, as a method of broadly by substantially shortening the exposure wavelength and the depth of focus, the liquid immersion method has been proposed. This is usually between the lower surface and the wafer surface of the projection optical system of water, or filled with a liquid such as an organic solvent, the wavelength of the exposure light in the liquid, the lZn times (eta in the air by the refractive index of the liquid 1.2 to 1.6 while improving the resolution as well be the extent), it is that the depth of focus is magnified about η times.

This immersion method, assuming to be applied to a single projection exposure apparatus of step-and-repeat method, after completion of the exposure of one shot area, the wafer to the next shot region when moving step, since thus out liquid from between the projection optical system and the wafer, there is a disadvantage that again must be supplied to the liquid, also it becomes difficult recovery of the liquid. Further, the liquid immersion method tentative step and the, when applied to a projection exposure apparatus of scanning type, in order to perform exposure while moving the © E eight, and also projecting projection optical system and the wafer while moving the wafer It must be met liquid between.

The present invention has been made in view of the points mow 斯, in the case of applying the liquid immersion method, even a projection optical system and © E c is moved relative, to ensure adequate stability fully liquid between a projection optical system and the wafer and to provide a projection exposure method which can be put. Also, the present invention is a projection exposure apparatus capable of performing such a projection exposure method, a method for efficiently producing the projection exposure apparatus, and to provide a method of manufacturing a device of a high function using such a projection exposure method and also aims. Disclosure of the Invention

The first projection exposure method according to the invention, the exposure beam irradiation a mask (R) in facie showing projection exposure transferred onto a substrate (W) via the mask (R) pattern projection optical system (PL) in the method, when moving along the substrate (W) in a predetermined direction, and its substrate (W) side tip portion of the optical element (4) of the projection optical system (PL) surface of the substrate (W) to meet between, along the moving direction of the substrate (W) is obtained by a flow a predetermined liquid (7).

According to a first projection exposure method of such the present invention, a liquid immersion method is applied, because between the tip and the substrate of the projection optical system (PL) (W) is filled with the liquid, the substrate the wavelength of the exposure light on the surface can shorten the wavelength to 1 Z n times (n is the refractive index of the liquid) of the wavelength in air, further the depth of focus spreads approximately n times than in the air. Also, when moving along the substrate in a predetermined direction, for the flow of the liquid along the moving direction of the substrate, even when moving the substrate, the tip portion of the projection optical system and the surface of the substrate between are met Ri by the the liquid. Also, when adhering foreign matter on the substrate can wash out foreign matter adhering on the substrate in the liquid.

Next, a first projection exposure apparatus according to the present invention illuminates a mask (R) with an exposure beam, the pattern of the mask (R) via a projection optical system (PL) is transferred onto a substrate (W) in the projection exposure apparatus, a substrate stage which is movable while holding the substrate (W) (9, 1 0), and the distal end portion of the optical element of the substrate (W) side of the projection optical system (PL) (4) to meet between the surface of the substrate (W), and piping for supplying the liquid supply device for supplying along connexion predetermined liquid (7) in a predetermined direction via the (2 1 a) (5), the as the surface of the substrate (W) via a pipe for supplying (2 1 a) with a pipe for discharge of the arranged so as to sandwich the irradiation area of ​​the exposure beam to the predetermined direction (23 a, 23 b) possess liquid recovery unit which recovers the liquid (7) and (6), the substrate stage (9, 1 0) drives with its the substrate (W) When moving along the Jo Tokoro, and performs supply and recovery of the liquid (7).

According to a first projection exposure apparatus of the present invention, it is possible to implement the first projection exposure method of the present invention by using these pipes. Further, piping for supplying the second pair of arrangement rotated substantially 1 80 ° the pipe for supplying the one-to (2 1 a) and the pipe for exhaust (23 a, 23 b) (22 a), and piping for discharging (24 a, 24 b) desired to provide arbitrary. In this case, substrate (W) when moving in a direction opposite to the predetermined direction, by using the latter pair of pipe, the tip of the projection optical system (PL) the substrate (W) between the surface of the can the liquid (7) by continuously meet stably.

Further, when the projection exposure apparatus is a scanning exposure type that performs exposure by synchronously moving the mask (R) and the substrate (W) and the projection optical science system (PL), during the predetermined direction scanning exposure it is desirable that a scanning direction of the substrate (W) of the. In this case, the tip and the liquid between the surface of the substrate (W) of the projection optical system also continued during the scanning exposure (PL) substrate Noso (W) side of the optical element (4) (7 ) by it is to continue to meet, it is possible to perform highly accurate and stable exposure.

Further, in a direction perpendicular to the predetermined direction, a pair in an arrangement corresponding to the one-to-supply pipe (2 1 a) and the pipe for discharging for the (2 3 a, 2 3 b), or two pairs piping for supplying (2 7 a), and piping for discharging (2 9 a, 2 9 b) it is desirable to provide. In this case, when moved stepwise the substrate (W) in the straight direction orthogonal to the predetermined direction, the liquid between the previous end of the projection optical system (PL) and the surface of the substrate (W) (7) by satisfying continues can Rukoto.

Further, the supply amount of the liquid (7) in accordance with the moving speed of the substrate stage, and a control system for adjusting the collection amount to have (14) desired. Thus, for example when the movement speed is fast by increasing the amount of supply, when the moving speed is slow by reducing the supply quantity, the liquid and the tip portion of the useless shit of the projection optical system (PL) thereof it can be kept filled to a constant between the surface of the substrate (W).

Further, the liquid (7) to be supplied to the surface of the substrate (W) is a pure water, or a fluorine-based inert liquid as an example has been adjusted to a predetermined temperature. In this case, pure water is easily its availability in example semiconductor manufacturing factory, there is no problem in environmental. Further, since the liquid (7) is temperature control, it is possible to adjust the temperature of the substrate surface, it is possible to prevent the thermal expansion of the substrate (W) by heat generated during exposure. While the liquid is of course desirable that the higher is transparently rate for the exposure beam, even if the transmittance is low, projecting P

6 for shadow working distance of the optical system is short, the amount of absorption of exposure beams is extremely small. A method of manufacturing a projection exposure apparatus according to the present invention, an illumination system for irradiating the exposure beam on the mask (R) and (1), a projection optical system for transferring an image of the pattern of the mask on the substrate (W) ( and PL), and a substrate stage which moves while holding the substrate (W) (9, 1 0), and the distal end portion of the projection optical system (PL) Noso substrate (W) side of the optical element (4) to meet between the surface of the substrate (W), and piping for supplying (2 1 a) liquid supply device for supplying a predetermined liquid (7) along a predetermined direction through the (5), the piping for supplying (2 1 a) together with the pipe of the predetermined direction in the illumination area of ​​the exposure beam (4) for discharge disposed in clamping useless to (2 3 a, 2 3 b) the substrate (W) via the is intended to produce a projection exposure apparatus from the surface of the liquid (7) assembled in the liquid recovery unit (6) and the Jo Tokoro positional relationship to recover.

The manufacturing method of a first device according to the present invention is a first device manufacturing method using the projection shadow exposure method of the present invention, by illuminating a mask (R) with an exposure beam, the mask (R the pattern of) via a projection optical system (PL) including an exposure step of transferring onto a substrate (W) for the device, when moving along the substrate (W) in a predetermined direction in the exposure step, the to meet between the surface of the substrate of the tip and its optical element of the substrate (W) side of the projection optical system (PL) (4) (W), along the moving direction of the substrate (W) it is obtained by the flow a predetermined liquid (7), can be immersion method is applied, to produce a device of high performance.

Next, the second projection exposure method according to the present invention illuminates a mask (R) with an exposure beam, in a projection exposure method for exposing a substrate (W) with the exposure beam through a projection optical system (PL), and the projection optical system with flow liquid (7) to fully plus as between its substrate, thereby changing the direction of flow of its liquid according to the moving direction of the substrate. According to the second projection exposure method of such the present invention, a liquid immersion method is applied, since between the projection optical system and (PL) and the substrate (W) is filled with the liquid, the exposure light on the substrate surface (n is the refractive index of the liquid) 1 Z n multiple of the wavelength a wavelength in the air of possible shorter wavelength, and further the depth of focus spreads approximately n times than in the air. Further, by varying the direction of flow the liquid in accordance with the moving direction of the substrate, even shall apply in the case where the moving direction of the substrate changes frequently, its during the projection optical system and its substrate it is possible to be filled with liquid.

Further, the supply rate of the liquid (7) and the first component of the movement direction of the substrate, when divided into a second component perpendicular to the direction of movement, the first component is the moving direction of the substrate (W) and when the opposite it is desirable to flow the liquid (7) in so that Do the following size predetermined tolerance. Yotsute to this, the velocity component of the liquid in the movement opposite to the direction of the board (W) is small, it can be smoothly supplied to liquid.

Further, it is more desirable to flow the liquid (7) in the same direction substantially along the moving direction of the substrate (W).

Further, if the substrate (W) is exposed in a step-and-repeat method or Sutetsu flop-and-scan type, flow the liquid (7) substantially along the scan Tetsubingu direction of the substrate (W) it is desirable.

Also, and the mask (R) with respect to the exposure beam and the substrate (W) relative movement respectively, both when scanning exposing the substrate with the exposure beam during the scanning exposure, the scanning direction of the substrate it is desirable to flow the liquid (7) substantially along.

Further, it is desirable to adjust the flow rate of the liquid (7) in accordance with the moving speed of the substrate [nu).

Next, a manufacturing method of a second device according to the present invention, by using the second projecting shadow exposure method of the present invention, in which a device pattern containing more lithographic Ye having a step of transferring onto a substrate (W) There, immersion method is applied, it is possible to produce the device highly functional.

Next, the second projection exposure apparatus according to the present invention illuminates a mask (R) with an exposure beam, in a projection exposure apparatus that exposes onto the substrate (W) with the exposure beam through a projection optical system (PL) , together with the flow of liquid (7) to meet between the projection optical system and its substrate, which was equipped with a liquid supply device for changing the direction of flow of the liquid (5) in accordance with the moving direction of the substrate is there.

According to the second projection exposure apparatus of the present invention, it is possible to implement the second projection EXPOSURE method of the present invention, even if the moving direction of the substrate changes frequently, its It may have been filled the liquid between the projection optical system and its substrate.

Further, and its mask (R) with respect to the exposure beam that substrate (W) stage 'system for relative movement, respectively and (RST,. 9 to 1 1) further to comprise a, the liquid supply device (5), during the scanning exposure of the substrate, it is desirable to flow the liquid (7) substantially along the moving direction of the substrate.

Moreover, further comprising it Shi desirable les ^ Also, the liquid supply apparatus of the liquid recovery device (6) for recovering the supplied liquid (7) between the projection optical system and (PL) and its substrate (W) (5) supply port (2 1 a) and the recovery port of the liquid recovery equipment (6) of (2 3 a, 2 3 b) and it is desirable that sandwich the irradiation area of ​​the exposure beam. BRIEF DESCRIPTION OF THE DRAWINGS

Figure 1 is a diagram showing a schematic arrangement of a projection exposure apparatus used in the first embodiment of the present invention. Figure 2 is a view to view the positional relationship between the discharge nozzle and the inflow nozzles tip 4 A and X direction of the lens 4 of the projection optical system PL in FIG. Figure 3 is a diagram illustrating the position relationship between the tip portion 4 A of the lens 4 of the projection optical system PL in FIG. 1, a discharge nozzle and inlet nozzle for supplying and recovering the liquid from the Y direction. Figure 4 is an enlarged view of a main part showing a state of supply and recovery of the liquid 7 to between the lens 4 and the wafer W in FIG. Figure 5 is a front view showing the lower end portion of the projection optical system PLA of the projection exposure apparatus used in the second embodiment of the present onset bright, liquid supply unit 5 and liquid recovery unit 6 and the like. Figure 6 is a diagram showing the positional relationship between the discharge nozzle and inlet nozzle for the lens 3 2 of the distal end portion 3 2 A and X direction of the projection optical system PLA of FIG. Figure 7 is a diagram showing the lens 3 2 of the distal end portion 3 2 A of the projection optical system PLA of Figure 5, the positional relationship between the discharge nozzle and the inflow nozzles for supplying and recovering the liquid from the Y direction. BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter will be described with reference to FIGS per an example of the preferred embodiment of the present invention. This example is applied to a case of performing exposure of the present invention the projection exposure apparatus of step-and-repeat method.

Figure 1 shows a schematic arrangement of a projection exposure apparatus of this embodiment, in FIG. 1, K r ​​F excimer laser light source as exposure light source, an optical 'Integre - evening (homogenizer), a field stop, the illumination comprising a condenser lens, etc. exposing light IL from the optical science system 1 consisting of ultraviolet pulse light emitted wavelength 2 4 8 nm illuminates a pattern provided on the reticle R. Pas evening over emissions of reticle R, on both sides (or the wafer W side to side) through a telecentric projection optical system PL a predetermined projection magnification] 3 (3, for example 1 Bruno 4, 1 Z 5, etc.) follower Torejisu Bok There is a reduction projection exposure area on the wafer W coated. Note The exposure light IL, A r F excimer laser beam (wavelength 1 9 3 nm), F 2 laser beam (wavelength 1 5 7 nm) or a mercury lamp i line using a (Wavelength 3 6 5 nm), etc. it may be. Hereinafter, parallel to take the Z-axis to the optical axis AX of the projection optical system PL, perpendicular to the plane of FIG. 1 in a plane perpendicular to the Z-axis take the Y-axis, parallel to taking X-axis in the paper plane of FIG. 1 It described Te.

The reticle R is held on a reticle stage RST, X-direction on the reticle stage RST, Y-direction, a mechanism for fine movement of the reticle R in the rotational direction is incorporated. 2-dimensional positions of the reticle stage RST, and rotation angle are measured in real time by a laser interferometer (not shown), the main control system 1 4 is to position the reticle R on the basis of the measured value.

On the other hand, the wafer W is fixed on the Z-stage 9 for controlling the focus position (Z-direction position) and inclination angle of the wafer W via the wafer holder (not shown). Z stage 9 is fixed on the XY stage 1 0 which moves along substantially parallel to the image plane XY plane of the projection optical system PL, the XY stage 1 0 is placed on the base 1 1. Z stage 9, full Orcas position of the wafer W (Z direction position), and O over autofocus system table surface on © E eight W by controlling the tilt angle, and the image plane of the projection optical system PL at O ​​over preparative leveling system match an existing, XY stage 1 0 for positioning the X-direction, and the Y direction of the wafer W. Two-dimensional position of the Z stage 9 (wafer W), and the angle of rotation is measured Ria-time by the laser interferometer 1 3 as the position of the movable mirror 1 2. Control information based on the measurement result from the main control system 1 4 on the wafer stage driving system 1 5 is transmitted, a wafer stage driving system 1 5 on the basis of this, controls the operation of the Z stage 9, XY stage 1 0 . Go Sutetsu flops successively exposed positions each shot area on © E eight W during exposure operation for exposing the pattern image of the reticle R are repeated in a step-and-repeat method.

Now, the depth of focus with the present embodiment to improve the resolution by substantially shortening the exposure wavelength to substantially wide, applying the liquid immersion method. Therefore, during the transfer even without least the path evening one down image of the reticle R on the wafer W is © E wafer W surface and the front end surface of the © E eight side of the lens 4 of the projection optical system PL (the lower surface) It should meet the predetermined liquid 7 between. Projection optical system PL includes a barrel 3 for accommodating other optical systems, has its lens 4, the liquid body 7 only the lens 4 is configured to contact. Yotsute thereto, corrosion of the barrel 3 made of metal is prevented.

The projection optical system PL, a plurality of optical elements including a lens 4, the lens 4 is detachably attached to the bottom of the barrel 3 (exchange) is securable. In this example, the closest to the wafer W, i.e., the optical element to make contact with the liquid 7 is a lens, its optical element is not limited to a lens, the optical characteristics of the projection optical system PL, for example, aberration (spherical aberrations may be an optical plate which Ru used for adjusting the coma aberration, and the like) (parallel flat plate, etc.). Moreover, since the scattered particles generated from the Regis Bok by the irradiation of the exposure light, or due to deposition of impurities in the liquid 7 in the surface of the optical element in contact with the liquid 7 dirty, periodically replace the optical element There is a need. However, when the optical element in contact with the liquid 7 is a lens, high cost of replacement parts, and will be summer long time required for replacement, lowering the increase and throughput maintenance costs (running cost) . Therefore the optical element to make contact with the liquid 7, for example, lenses good record this as a cheap parallel plane plate than 4 cases, the transmittance of the projection optical system PL transportation, assembly, the adjustment or the like of the projection exposure apparatus , the parallel flat immediately before supplying the illuminance of the exposing light on the wafer W, and agent that reduces the uniformity and the like of the illuminance distribution (for example, a silicon-based organic matter) is also attached to the parallel plane plate, the liquid 7 it is sufficient to replace the face plate, there is an advantage that the replacement cost Ku becomes lower than the case of the lens of the optical element to make contact with the liquid 7. Further, as the liquid 7, in this example using the pure water, for example. Pure water can be obtained in large quantities at a semiconductor manufacturing plant or the like, that it has no adverse effects on the photoresists and optical lenses and the like on the wafer. Further, pure water with no adverse effects on the environment and contains very few impurities, the surface of the © E c, and also acts to clean the surface of the lens 4 can be expected.

Since the wavelength is the refractive index n of pure water (water) with respect to 2 5 0 nm about the exposure light is approximately 1. 4, K r ​​F excimer wavelength 2 4 8 nm single laser light is on the wafer W is l Z n, shorter wavelength has been higher resolution can be obtained that is about 1 7 7 nm. Furthermore, approximately n times the depth of focus than in the air, i.e., about 1. To be magnified four times, when a depth of focus approximately the same as that when used in air may if securing the projection optical system PL numerical aperture can and this more increase in, and resolution improves on this point.

The liquid 7, the tank of the liquid, a pressurizing pump, the liquid supply device 5 consisting of a temperature control device or the like is supplied in a state of being temperature-controlled on the wafer W through a predetermined discharge nozzle or the like, of the liquid the liquid recovery device 6 consisting of a tank and a suction pump or the like, are recovered from the wafer W through a predetermined inlet nozzle or the like. Temperature of the liquid 7, for example, a projection exposure apparatus of this embodiment is set to the same extent as the temperature in the chamber being retract and. The projecting projection optical system of the lens 4 of PL tip in the X direction to sandwich manner tip thin as ivy discharge nozzle 2 1 a, and the tip is wide Natsuta two inflow nozzles 2 3 a, 2 3 b (see FIG. 2) has been arranged, the discharge nozzle 2 la is connected to the liquid supply unit 5 through a feed pipe 2 1, the inflow nozzles 2 3 a, 2 3 b is liquid recovered through the recovery pipe 2 3 It is connected to the device 6. Further, sandwiching the pair discharge nozzle 2 1 a, and the inflow nozzle 2 3 a, 2 3 b substantially 1 8 0 ° round a pair of nozzles which rolling was arranged, and the distal end portion of the lens 4 in the Y-direction arranged two pairs discharge nozzles so, and the inflow nozzles are arranged, FIG. 2, the tip portion 4 a and the wafer W of the lens 4 of the projection optical system PL in FIG. 1, the tip 4 a shows the positional relationship between the discharge nozzle and the inflow nozzles 2 pairs sandwiching the X direction. in FIG. 2, the tip 4 discharge nozzle 2 1 a in the + X direction side of a, the inflow nozzles 2 3 to an X direction a, 2 3 b are placed respectively. Further, the inflow nozzles 2 3 a, 2 3 b are arranged in the form of an open in a fan shape with respect to an axis parallel to the street X axis the center of the tip 4 A. Then, a pair discharge nozzle 2 1 a, and the inflow nozzle 2 3 a, 2 3 b substantially 1 8 0 ° rotated another pair discharge nozzle 2 2 a of the arrangement, and the inflow nozzle 2 4 a, 2 4 b is disposed, the discharge nozzle 2 2 a are connected to the liquid supply equipment 5 via a feed pipe 2 2, the inflow nozzles 2 4 a, 2 4 b to the liquid recovery unit 6 via the recovery tube 2 4 It is connected.

Further, FIG. 3 shows the positional relationship between the tip portion 4 A of the lens 4 of the projection optical system PL in FIG. 1, the tip 4 A of that the discharge nozzles and the inflow nozzles 2 pairs sandwiching the Y direction, this 3, the tip portion 4 a of the + Y direction side to the discharge nozzle 2 Ί Ά, flows into the -Y direction side nozzle 2 9 a, 2 9 b are arranged, the discharge nozzle 2 7 a supply pipe 2 7 via is connected to the liquid supply unit 5, inflow nozzle 2 9 a, 2 9 b are connected to the liquid recovery unit 6 via the recovery pipe 2 9. Further, a pair discharge nozzle 2 7 a, and the inflow nozzle 2 9 a, 2 9 b nearly 1 8 0 ° rotated another pair discharge nozzle 2 8 a of the arrangement, and the inflow nozzles 3 0 a, 3 0 b is disposed, the discharge nozzle 2 8 a are connected to the liquid supply unit 5 through a feed pipe 2 8, the inflow nozzles 3 0 a, 3 O b is connected to the liquid recovery unit 6 via the recovery pipe 3 0 It is. Liquid supply unit 5 supplies a temperature controlled fluid between at least one through the lens 4 above the end portion 4 A and the wafer W of the feed pipe 2 1, 2 2, 2 7, 2 8, liquid recovery equipment 6 via at least one collecting tube 2 3, 2 4, 2 9, 3 0 recovering the liquids. Next, a description will be given feed and recovery method for a liquid 7.

In Figure 2, when the wafer W is moved step in the direction of arrow 2 5 A shown by a solid line (an X direction), the liquid supply unit 5, the supply pipe 2 1, and emissions through the nozzle 2 1 a It supplies the liquid 7 between the tip 4 a and the wafer W of the lens 4. The liquid recovery device 6 recovers the liquid 7 from the wafer W through the recovery tube 2 3 and the inflow nozzle 2 3 a, 2 3 b. In this case, the liquid 7 is flow over the wafer W in the direction (one direction X) of the arrow 2 5 B, between © E wafer W and the lens 4 is filled stably with the liquid 7.

On the other hand, the wafer W in the direction (+ X direction) of the arrow 2 6 A indicated by a two-dot chain line in moving scan Tetsupu, the liquid supply unit 5 using the supply tube 2 2, and the discharge Nozzle 2 2 a Te supplying a liquid 7 between the tip 4 a and the wafer W of the lens 4, the liquid recovery unit 6 for recovering the recovery tube 2 4 and inflow nozzles 2 4 a, the liquid 7 by using 2 4 b. In this case, the liquid 7 is flow over the wafer W in the direction (+ X direction) of the arrow 2 6 B, between the wafer W and the lens 4 is filled with the liquid 7. Thus, the projection exposure apparatus of this embodiment, since the provided inflow and the discharge nozzle of the two pairs of mutually inverted in the X direction nozzle, a © E wafer W + X direction, or - move in either the X direction also in the case of, between the wafer W and the lens 4 may be continuously filled stably with the liquid 7.

Further, since the liquid 7 flows over the wafer W, that even if the foreign matter (including the scattering particles from Regis Bok) is deposited on the wafer W, it is possible to wash out the foreign by the liquid 7 there is an advantage. The liquid 7 because it is adjusted to a predetermined temperature by the liquid supply device 5, is carried out temperature control of the wafer W surface, the accuracy of such overlay that by the thermal expansion of the wafer due to heat generated during the exposure it is possible to prevent the deterioration. Therefore, EGA as Araimento of (E down hunger strike 'global Araimento) method, even when a Araimento exposure and two hours difference, be prevented that the overlay accuracy due to thermal expansion of the wafer decreases can. Further, the projection exposure apparatus of this embodiment, since the liquid 7 flows in the same direction as the direction of moving the the wafer W, the liquid that has absorbed the foreign matter or heat on exposure area directly under the tip 4 A of the lens 4 it can be recovered without being retained.

Further, when to step moves the wafer W in the Y direction to supply and recovery of the liquid 7 from the Y-direction.

That is, the direction of the arrow 3 1 A shown by the solid line in Figure 3 - in the © E c is moved step (Y direction), the liquid supply device 5 supplying pipe 2 7, through the discharge Roh nozzle 2 7 a liquid supply, liquid recovery unit 6 uses the recovery tube 2 9 and inflow nozzle 2 9 a, 2 9 b performs recovery of the liquid, the exposure area directly under the tip 4 a of the liquid lens 4 arrow 3 1 direction B - flow (Y-direction). Further, when to step moves the wafer in the + Y direction, the supply pipe 2 8, the discharge nozzle 2 8 a, the supply and recovery of the liquid by using the collecting tube 3 0 and inflow nozzles 3 0 a, 3 0 b done, the liquid flows over the exposure area directly under the tip 4 a + Y direction. Thus, as in the case of moving the wafer W in the X direction, even when moving in either the wafer W + Y direction, or one Y-direction, the leading end 4 A of the wafer W and the lens 4 between can meet Ri by the liquid 7.

Incidentally, X-direction or Y-direction from not just a nozzle for supplying and recovering the liquid 7 may be provided Bruno nozzle for supplying and recovering the liquid 7, for example from an oblique direction.

Then, the supply amount of the liquid 7, and a control method for the recovery amount will be described. Figure 4 shows how the supply and recovery of the liquid 7 to between the lens 4 and the wafer W of the projection optical system PL, and in FIG. 4, the wafer W is arrow 2 5 A direction (- X direction) is moving, the discharge nozzle 2 1 a liquid body 7 which is supplied from the arrow 2 5 B directions - flows in the direction (X direction), is recovered by the inflow nozzles 2 3 a, 2 3 b. Lens 4 and the eye kept constant amount of liquid 7 to be present even © E eight W during movement between the wafer W, in this example the supply amount V i of the liquid 7 (m 3 / s) and the recovery amount V o ( m 3 / s) and with equal, also the supply amount of the liquid 7 to be proportional to the moving speed V of the XY scan te temporary 1 0 (wafer W)

To adjust the V i, and the recovery amount V o. That is, the main control system 14 is subjected amount V i of the liquid 7, and the recovery amount V o, it is determined by the following equation.

V i = V o = D - v - d (3)

Here, D as shown in Figure 1 of the lens 4 tip diameter (m), the moving velocity of V are XY stage 1 0 (MZS), d is actuated distance of the projection optical system PL (the working 'Distance) a (m). Speed ​​V at the time of scan of the XY stage 1 0 Tetsupu movement, which is set by the main control system 1 4, since the D and d are input in advance, supply of the liquid 7 based on the equation (3) by adjusting the amount V i, and the recovery amount Vo, between the lens 4 and the © E c W in FIG. 4 are filled liquid 7 at all times.

Incidentally, the working distance d of the projection optical system PL, to the liquid 7 to be present stably between the projection optical system PL and the wafer W, it is desirable to as narrow as possible. However, since the working distance d is too small the surface of the wafer W is likely to contact with the lens 4, should Ru with a margin of some degree. Therefore, the working distance d is set to about 2mm, for example. Because this way working distance d is short, even transmittance for exposure light of the liquid 7 is lower degrees as one, the amount of absorption of exposure light is extremely small.

Next, you explained with reference to FIGS. 5 to 7 in the second embodiment of the present invention. This example is applied to a case of exposing the present invention the projection exposure apparatus of step-and-scan method.

Figure 5 is a front view showing the bottom, the liquid supply equipment 5, and the liquid recovery device 6 or the like of the projection optical system PLA of the projection exposure apparatus of this embodiment, the same reference numerals are applied to parts corresponding to FIG. 4 5 showing Te, lens 3 2 for the lowermost end of the barrel 3 a of the projection optical system PLA, the tip portion 3 2 a is elongated rectangular in the Y direction, leaving only portions necessary for scanning exposure (non-scanning direction) It has been cut in. Scanning exposure times, tip 3 2 part of Pas evening over down image of the reticle in a rectangular exposure area directly under the A is projected, the projection optical system PLA, a reticle (not shown) - X direction (or + X direction) in synchronism to move at a velocity V, XY stearyl - speed wafer W + X direction (or one X-direction) via the di-1 0] 3 · V

(/ 3 projection magnification) moves. Then, the exposure after the end of one shot region moves to the scanning start position is the next shot area by Sutetsubingu the wafer W, the exposure of each shot region by the step-and-scan method is sequentially performed below.

By application during even scan exposure in this example an immersion method, a liquid 7 is filled between the lens 3 2 and © E eight W surface. Supply and recovery of the liquid 7 is performed by respectively a liquid supply unit 5 and liquid recovery unit 6 it.

6, supplies the lens 3 2 of the distal end portion 3 2 A liquid 7 of the projection optical system PLA in the X-direction indicates the positional relationship between the discharge nozzle and the inflow nozzles for recovering, in FIG. 6, the lens 3 the shape of the second distal portion 3 2 a has become a elongated rectangular in the Y direction, three discharge lens 3 2 of the distal end portion 3 2 a of the projection optical system PLA in the + X direction side so as to sandwich the X direction nozzle 2 1 a through 2 1 c are arranged, two inflow nozzles 2 3 a, 2 3 b are arranged in a X direction.

The discharge nozzle 2 1 A through 2 1 c are connected to the liquid supply equipment 5 via a feed pipe 2 1, the inflow nozzles 2 3 a, 2 3 b in the liquid recovery unit 6 via the recovery pipe 2 3 It is connected. The discharge nozzle 2 1 a~2 1 c and the inlet nozzle 2 3 a, 2 3 and b approximately 1 8 0 ° rotated arrangement, the discharge nozzle 2 2 a~2 2 c and the inflow nozzle 2 4 a, 2 4 and a and b are arranged. A discharge Nozzle 2 1 a~2 1 c and the inflow nozzles 24 a, 24 b are arranged alternately in the Y direction, alternately in the Y Direction The discharge nozzle 22 a~22 c and the inflow nozzles 23 a, 23 b are arranged, the discharge nozzle 22 A~22 c are connected to the liquid supply unit 5 through the supply tube 22, the inflow nozzles 24 a, 24 b are connected to the liquid recovery unit 6 via the recovery pipe 24.

Then, when performing scanning exposure in the scanning direction indicated by the solid line arrows (one X-direction) to move the wafer W, the supply pipe 2 1, the discharge nozzle 2 1 A through 2 1 c, the recovery pipe 23 and, by the liquid supply unit 5 and liquid recovery unit 6 using the inflow nozzles 23 a, 23 b performs supply and recovery of the liquid 7 to flow the liquid 7 to an X-direction so as to satisfy the between the lens 32 and the wafer W . Further, when the run 查露 light by moving the wafer W in the direction (+ X direction) indicated by an arrow indicated by the two-dot chain line, the supply pipe 22, the discharge nozzle 22 A~22 c, the recovery tube 24 and the inflow nozzles, 24 a, performs supply and recovery of the liquid 7 by using a 24 b, flow lens 32 and the liquid 7 to the + X direction so as to satisfy the between the wafer W. By switching the direction of flow of the liquid 7 according to Hashi查 direction, + X direction, or even in the case of scanning the wafer W in either direction one X-direction, and the lens 3 2 of the tip portion 32 A and the wafer W between can be met by the liquid 7, a high resolution and a wide depth of focus is obtained.

Further, the supply amount of the liquid 7 V i (m 3 / s ), and the recovery amount Vo (m 3 / s) is determined by the following equation.

V i = Vo = D sv - v - d (4)

Here, D SY is X direction length of the tip portion 32 A of the lens 32 (m) Ru der. Between the lens 32 and the wafer W even by connexion scanning exposure during this can be satisfied stably by liquid 7.

It should be noted that the number and shape of the nozzle is not specifically limited, for example, the long sides of the distal end portion 32 A may perform the supply or recovery of the liquid 7 in the two pairs of nozzles. In this case, + X direction, or one in order to be able to supply and recovery of the liquid 7 from either direction of the X direction, and arranged side by side with the discharge nozzle and the inflow nozzles in the vertical it may be.

Further, when to step moves the wafer W in the Y direction, as in the first embodiment, performing the supply and the recovery of the liquid 7 from the Y-direction.

Figure 7 shows the positional relationship between the lens 3 and second discharge nozzles and the inflow nozzles of the distal end portion 3 for 2 A and Y direction of the projection optical system PLA, perpendicular in FIG. 7, a © E c in the scan direction non when the Hashi查 direction (one Y-direction) Ru moved stepwise, the discharge nozzle 2 7 a which are arranged in the Y direction, and the supply and recovery of the inflow nozzle 2 9 a, the liquid 7 by using 2 9 b performed, also in the case of step moves the wafer in the + Y direction, the discharge are arranged in the Y direction nozzle 2 8 a, and supply and recovery of the inflow nozzles 3 0 a, 3 0 b liquid 7 using I do. Further, the supply amount of the liquid 7 V i (m 3 Z s ), and the recovery amount V o (m 3 Z s) is determined by the following equation.

V i = V o = D sx · V · d (5)

Here, D sx lens 3 2 of the distal end portion 3 2 A Y-direction length (m) Ru der. Like the first embodiment, by adjusting the supply amount of the liquid 7 according to the moving speed V of the wafer W even when moved stepwise in the Y direction, the lens 3 2 and the liquid 7 between the wafer W it is possible to continue to meet by.

The when moving the wafer W as described above, it is possible that by flowing liquid countercurrent person according to the moving direction, between the tip portion of the wafer W and the projection optical system PL continues to fill with the liquid 7 .

The liquid that is used as the liquid 7 in the above embodiment is not intended to be limited to pure water, high as a refractive index can be a permeable to the exposure light and a projection optical system and the wafer surface stables respect coated with and off Otorejisuto (e.g. Seda first oil etc.) can be used.

As the liquid 7, it is chemically stable, i.e. may be used fluorine-based inert liquid is a highly safe liquid transmittance to the exposure light. As the full Tsu-containing-containing inert liquid, for example Florina one preparative (trade name of U.S. Sri one E beam, Inc.). The fluorine-containing inert liquid is also excellent from the point of cooling effect.

Also, may be reused liquid 7 recovered in each of the embodiments described above, provided the fill evening for removing impurities from a liquid 7 recovered in this case the liquid recovery unit, a recovery pipe or the like and keep it is desirable.

Moreover, the scope flowing liquid 7 only to be set to cover the entire area of ​​the projection area of ​​the path evening one down image of the reticle (the irradiation area of ​​the exposure light), the magnitude of which may be optionally, flow rate, flow rate in controlling the like, it is desirable to minimize the scope and slightly larger than the exposure area as in the embodiments described above. Since Rukoto be recovered any liquid supplied at the inflow nozzle is difficult, so as not overflow liquid from the Z stage to form a partition wall surrounding the wafer if example embodiment, recovering the liquid in the partition wall it is desirable to further provide a pipe for.

Although in the embodiments described above was assumed to flow a liquid 7 along the moving direction of the wafer W (XY stage 1 0), the direction of flow of the liquid 7 does not need to match the direction of movement. That is, the direction of flow of the liquid 7 may not intersect with the movement Direction, for example when moving the wafer W in the + X direction, one X-direction velocity component of the liquid 7 is zero, or a predetermined tolerance it may be allowed to flow liquid 7 along in the direction of less than or equal to. Thus, the step-and-repeater Ichito method, or when exposing a wafer with step-and-scan method (both comprising 'and-Sutitsuchi method), its direction of movement in a short time (example, several hundred ms be varied frequently extent), and follows it to control the direction of fluid flow, it can be kept filled with liquid between the projection optical system and the wafer. Further, in the projection exposure apparatus of step-and-scan method, as run 查 direction and non-scanning direction of the velocity component of the XY stage in the movement of wafer between shot areas is not both zero and, namely one shot start even after the scanning exposure is completed for intercluster region during deceleration of the XY stage stepping of the XY stage (before the velocity component in the run 查 direction is zero) (moved to the non-run 査 direction), its stepping (even before the velocity component in the non-scanning direction becomes zero, for example during deceleration of the XY stage) before ending, XY to begin acceleration of the XY stage for scanning exposure of the next shot area to control the movement of the stage. Even in such a case, by controlling the direction of flow of liquid in response to the movement direction of the wafer may have been filled with liquid between the projection optical system and the wafer.

As use of the projection exposure apparatus of this embodiment is not limited to the projection exposure equipment for manufacturing semiconductor, for example, Ya projection exposure apparatus for liquid crystal which exposes a liquid crystal display element pattern onto a rectangular glass plate , it can be widely applied to a projection exposure apparatus for manufacturing thin-film magnetic head.

Also, a reticle or mask used in an exposure apparatus for device manufacture for manufacturing a semiconductor element or the like, may be produced by the exposure light device using, for example, far ultraviolet light or vacuum ultraviolet light, the projection of the above-described embodiments the exposure apparatus can be suitably used in the degree follower Bok lithographic Ye for producing a record chicle or mask.

Furthermore, both a single wavelength laser in the infrared region or the visible region oscillated from the DFB semiconductor laser or phi Valley The as exposure illumination light, for example Erubi © beam (E r) (or erbium and ytterbium (Y b) ) was amplified by Gad-loop and fiber first amplifier, and may be used harmonic by converting the wavelength into ultraviolet light using a nonlinear optical crystal. The projection optical system PL is a refractive system, as the reflection system and either good c catadioptric system of the catadioptric system, as for example disclosed in U.S. Patent No. 5 7 8 8 2 2 9 items, a plurality of refractive optical element and two reflective optical elements (at least hand concave mirror) and can be used optical system placed on an optical axis extending in a straight line without being bent. In an exposure apparatus having the disclosed reflected refraction system in US patent closest to © E eight, i.e. light optical element to make contact with the liquid is the reflective optical element. Incidentally, designated states in this international application, or with the aid of the disclosure of this patent to the extent permitted by the national laws of the selected country selected and are hereby.

The illumination optical system composed of a plurality of lenses, as well as a built-in optical adjustment to the exposure instrumentation Okimoto body projection optical system, wiring Ya the retinyl cycle stage and wafer stage comprised of many mechanical parts mounted on the exposure apparatus body connect the pipe, the pipe (supply pipe, exhaust nozzles, etc.) for supplying and recovering the liquid by installing a further overall adjustment (electrical adjustment, operation confirmation, etc.) projected more present embodiment to the it is possible to manufacture the exposure apparatus. The production of the projection exposure apparatus is preferably performed in a clean room where the temperature and cleanliness are controlled.

The semiconductor device Sutetsu flop that designs the functions and performance of the device, the step of manufacturing a reticle based on the step, the step of producing a wafer from the silicon materials, the reticle by the projection exposure apparatus of the above-described embodiment exposing the path evening Ichin the wafer, the device set stand step (dicing, bonding, including packaging step), and an inspection step or the like.

The present invention is not limited to the embodiments described above, can take various arrangements without departing from the gist of the present invention. Further, specification, claims, drawings, and abstract, all disclosures of 1 9 9 8 March 2, 6 date filed Japanese Patent Application No. 1 0 7 9 2 6 3 items, it is incorporated herein by reference in their entirety. Industrial Applicability

According to the first or second projection exposure method of the present invention, because uses the liquid immersion method, about n times the depth of focus DOF ​​of the pattern image of the mask in the air (n is the liquid used can be extended refractive index), a fine pattern can be transferred in a stable high resolution. Therefore, mass production with a high yield of high integration of semiconductor devices and the like. Also, when moving along the substrate in a predetermined direction, so as to satisfy the between the tip surface of the substrate and its optical element of the substrate side of the projection optical system, along the moving direction of the substrate for the flow of the liquid Te, even when moving the substrate between the tip and the surface of the substrate of the projection optical system is filled with the liquid immersion method is that you can use. Also, when adhering foreign matter on the substrate is to stick to a thereof on the substrate can wash out foreign matter has an advantage that it is possible to improve the yield of final product.

Then, according to the first or second projection exposure apparatus of the present invention, it is possible to implement the first or second projection exposure method of the present invention. Further, the supply amount of the liquid in accordance with the moving speed of the substrate stearyl one di-, and if you adjust the recovery amount (flow rate) has a distal end portion of the even projection optical system moving speed of the stage is changed the amount of liquid present between the surface of the substrate can be kept constant <

Claims

The scope of the claims
In 1. Exposed illuminates the mask in the beam, a projection exposure method for transferring onto a substrate a pattern of the mask through a projection optical system,
When moving along the substrate in a predetermined direction, so as to satisfy the between the tip and the substrate surface of the optical element of the substrate side of the projection optical system, along connexion predetermined in the moving direction of the front Stories substrate projection exposure method characterized by flowing a liquid.
2. Illuminates the mask with an exposure beam, in a projection exposure apparatus for transferring onto a substrate through a projection optical system a pattern of the mask,
A substrate stage which is movable while holding the substrate, wherein as the tip of the front Stories substrate side of the optical element of the projection optical system satisfying the between the substrate surface in a predetermined direction through a pipe for supplying a liquid supply device for supplying a predetermined liquid along said liquid from a surface of the substrate through the arranged pipes for discharging so as to sandwich the irradiation area of ​​the exposure beam in the predetermined direction together with the pipe for the supply anda liquid recovery apparatus for recovering,
Projection exposure equipment, wherein said substrate by driving the substrate stage when moving along said predetermined direction, to perform supply and recovery of the liquid.
3. A projection exposure apparatus according to claim 2, wherein,
Said pair substantially 1 8 0 ° rotated second pair piping for supply of arranging the pipes and the pipe for discharging for supplying, and characterized in that a pipe for discharging projection exposure apparatus.
4. A projection exposure apparatus in the range 2, or 3 wherein the billing,
And wherein the projection exposure apparatus is a scanning exposure type for exposing synchronous move to the mask and the substrate relative to the projection optical system, the predetermined direction is a scanning direction of the substrate during the scanning exposure projection exposure apparatus that.
5. A projection exposure apparatus in the range 2, 3, or 4 claims,
In a direction perpendicular to the predetermined direction, the one-to-one pair in an arrangement corresponding to the pipe and the pipe for discharging for supplying, or piping for supplying two pairs of mutually inverted, and provided with piping for discharging projection exposure apparatus, characterized in that.
6. A projection exposure apparatus according to one of the range 2-5 claims, characterized in that it has a control system that adjusts the supply amount and the recovery amount of the liquid according to the moving speed of the substrate stage projection exposure location to be.
7. A projection exposure apparatus according to one of the range 2-6 claims, pure water wherein the liquid supplied to the surface of the substrate was adjusted to a predetermined temperature, or a fluorine-based inert liquid projection exposure apparatus characterized by some.
8. An illumination system for irradiating an exposure beam on a mask, a projection optical system for transferring an image of a pattern of the mask onto a substrate, a base plate stage for moving and holding the substrate, the substrate of the projection optical system to meet between the tip and the substrate surface of the optical element side, a liquid supply device for supplying along connexion predetermined liquid in a predetermined direction through a pipe for supplying, prior with piping for the supply wherein the assembled serial and a liquid recovery apparatus for recovering the liquid from the surface of the substrate through the exposure beam pipe for discharge disposed so as to sandwich the irradiated region of a predetermined direction in a predetermined positional relationship production how of the projection exposure apparatus.
9. Manufacturing process Der connexion device with a projection exposure method of claims 1, wherein the, illuminates the mask with an exposure beam, comprising an exposure step of transferring onto a substrate through a projection optical system a pattern of the mask in the exposure step, when moving along the front Stories substrate in a predetermined direction, so as to satisfy the between the tip and the substrate surface of the optical element of the substrate side of the projection optical system, the base plate manufacturing method for a device which is characterized in that flow a predetermined liquid along the direction of movement of.
In 1 0. Exposed illuminates the mask in the beam, a projection exposure method for exposing a substrate with the exposure bicycloalkyl one beam via the projection optical system,
With flow liquid to fill between the substrate and the projection optical system, a projection exposure method according to feature a varying direction of flowing the liquid according to the moving direction of the substrate.
1 1. A projection exposure method in the range 1 0 described claims,
A first component of the movement direction of the substrate the feed rate of the liquid, when divided into a second component perpendicular to the direction of movement, given when the first component is moving Direction opposite direction of the substrate projection exposure method characterized by flowing the liquid to be the allowable value or less in size.
1 2. A projection exposure method in the range 1 0 described claims,
Projection exposure method according to feature flowing a substantially along said liquid in the same direction to the moving direction of the substrate.
1 3. A projection exposure method in the range 1 wherein claims,
The substrate is exposed in the step 'and-repeat method or step-and' scan method, projection exposure method characterized by flowing a substantially along connexion before Symbol liquid Sutetsupingu direction of the substrate.
1 4. A range 1 2 or 1 3 projection exposure method according to claim,
The exposure beam and the substrate and the mask each move relative to, while the scanning exposure the substrate with the exposure beam during the scanning exposure light, flow substantially along connexion the liquid to the scanning direction of the substrate projection exposure how to, characterized in that.
1 5. A range 1 0-1 4 any one projection exposure method according to the claims. Projection exposure method characterized by adjusting the flow rate of the liquid according to the moving speed of the substrate.
1 6. Using a projection exposure method in the range 1 0-1 5 any one claim of claims Debaisu method for producing characterized in that it comprises a device pattern as lithographic Ye having a step of transferring onto a substrate .
1 7. Illuminates the mask with an exposure beam, in a projection exposure apparatus for transferring onto a substrate by the exposure beam via the projection optical system,
Projection exposure method characterized in that the projection optical system and with flow of liquid to fill between the substrate, with a liquid supply device for changing the direction of flow of the liquid according to the moving direction of the substrate.
1 8. A projection exposure apparatus in the range 1 7, wherein the billing,
When divided into a second component perpendicular to the feed rate of the liquid to the first component and the moving direction of the moving direction of the substrate, the liquid supply apparatus, the moving direction opposite to the direction of the first component is said substrate projection exposure apparatus characterized by flowing the liquid to be equal to or less than the size of the predetermined allowable value when it is.
1 9. A projection exposure apparatus in the range 1 8 wherein claims,
The substrate is exposed in the step 'and-repeat method or step' and 'scan method, the liquid supply apparatus is a projection exposure apparatus characterized by flowing the liquid substantially along the Sutetsupin grayed direction of the substrate.
2 0. A projection exposure apparatus according to one of the range 1 7-1 9 according, further comprising a stage system for each relative movement between the substrate and the mask relative to the exposure beam, wherein liquid supply device, during the scanning exposure of the substrate, the projection exposure apparatus according to feature that flowing the fluid substantially along the moving direction of the substrate.
2 1., Further comprising a liquid recovered apparatus for recovering the supplied liquid between a projection exposure apparatus according to one of the range 1 7-2 0 of claims. The projection optical system and said substrate projection exposure apparatus, characterized in that.
2 2. A projection exposure apparatus in the range 2 1 according claims, and wherein the supply port of the liquid supply device and said recovery port of the liquid recovery device is disposed across the irradiated region of the exposure beam projection exposure apparatus that.
PCT/JP1999/001262 1998-03-26 1999-03-16 Projection exposure method and system WO1999049504A1 (en)

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JP7926398 1998-03-26

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WO2004055803A1 (en) * 2002-12-13 2004-07-01 Koninklijke Philips Electronics N.V. Liquid removal in a method and device for irradiating spots on a layer
JP2004207711A (en) * 2002-12-10 2004-07-22 Nikon Corp Exposure device, exposure method, and device manufacturing method
WO2004068242A1 (en) * 2003-01-31 2004-08-12 Tokyo Ohka Kogyo Co., Ltd. Resist composition
WO2004073053A1 (en) 2003-02-17 2004-08-26 Nikon Corporation Stage device, exposure device, and device manufacturing method
WO2004074937A1 (en) * 2003-02-20 2004-09-02 Tokyo Ohka Kogyo Co., Ltd. Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method
WO2004077158A1 (en) * 2003-02-25 2004-09-10 Tokyo Ohka Kogyo Co., Ltd. Photoresist composition and method of forming resist pattern
WO2004076535A1 (en) * 2003-02-26 2004-09-10 Tokyo Ohka Kogyo Co., Ltd. Silsesquioxane resin, positive resist composition, layered product including resist, and method of forming resist pattern
WO2004079800A1 (en) * 2003-03-04 2004-09-16 Tokyo Ohka Kogyo Co. Ltd. Immersion liquid for immersion exposure process and resist pattern forming method using such immersion liquid
WO2004079453A1 (en) * 2003-03-04 2004-09-16 Tokyo Ohka Kogyo Co., Ltd. Resist material for liquid immersion exposure process and method of forming resist pattern with the resist material
JP2004259966A (en) * 2003-02-26 2004-09-16 Nikon Corp Aligner and device manufacturing method
JP2004282023A (en) * 2002-12-10 2004-10-07 Nikon Corp Exposure apparatus and method for manufacturing device
WO2004086470A1 (en) * 2003-03-25 2004-10-07 Nikon Corporation Exposure system and device production method
WO2004086468A1 (en) * 2003-02-26 2004-10-07 Nikon Corporation Exposure apparatus and method, and method of producing apparatus
WO2004088429A1 (en) * 2003-03-28 2004-10-14 Tokyo Ohka Kogyo Co. Ltd. Resist composition for liquid immersion exposure process and method of forming resist pattern therewith
WO2004090633A2 (en) * 2003-04-10 2004-10-21 Nikon Corporation An electro-osmotic element for an immersion lithography apparatus
WO2004090956A1 (en) * 2003-04-07 2004-10-21 Nikon Corporation Exposure apparatus and method for manufacturing device
WO2004092833A2 (en) 2003-04-10 2004-10-28 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
WO2004093159A2 (en) * 2003-04-09 2004-10-28 Nikon Corporation Immersion lithography fluid control system
WO2004092830A2 (en) * 2003-04-11 2004-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
WO2004097911A1 (en) * 2003-05-01 2004-11-11 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
EP1477856A1 (en) * 2003-05-13 2004-11-17 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2004102646A1 (en) * 2003-05-15 2004-11-25 Nikon Corporation Exposure apparatus and method for manufacturing device
WO2004105106A1 (en) * 2003-05-23 2004-12-02 Nikon Corporation Exposure method, exposure device, and device manufacturing method
WO2004105107A1 (en) * 2003-05-23 2004-12-02 Nikon Corporation Exposure device and device manufacturing method
WO2004107417A1 (en) * 2003-05-28 2004-12-09 Nikon Corporation Exposure method, exposure device, and device manufacturing method
EP1486828A2 (en) 2003-06-09 2004-12-15 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1486827A2 (en) * 2003-06-11 2004-12-15 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1489462A2 (en) 2003-06-19 2004-12-22 ASML Holding N.V. Immersion photolithography system comprising microchannel nozzles
EP1489461A1 (en) * 2003-06-11 2004-12-22 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2004112108A1 (en) * 2003-06-13 2004-12-23 Nikon Corporation Exposure method, substrate stage, exposure apparatus and method for manufacturing device
EP1491956A1 (en) * 2003-06-27 2004-12-29 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2004114380A1 (en) * 2003-06-19 2004-12-29 Nikon Corporation Exposure device and device producing method
EP1494075A1 (en) * 2003-06-30 2005-01-05 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
EP1494079A1 (en) * 2003-06-27 2005-01-05 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005012194A (en) * 2003-05-23 2005-01-13 Nikon Corp Exposure method and device manufacturing method
JP2005012201A (en) * 2003-05-28 2005-01-13 Nikon Corp Exposure method, aligner and device manufacturing method
WO2005003864A2 (en) 2003-06-24 2005-01-13 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
JP2005012195A (en) * 2003-05-23 2005-01-13 Nikon Corp Aligner and method of manufacturing same
US6844919B2 (en) 2000-12-11 2005-01-18 Yutaka Suenaga Projection optical system and exposure apparatus having the projection optical system
EP1498778A1 (en) * 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005006416A1 (en) 2003-07-09 2005-01-20 Nikon Corporation Linking unit, exposure apparatus and method for manufacturing device
WO2005006417A1 (en) 2003-07-09 2005-01-20 Nikon Corporation Exposure apparatus and method for manufacturing device
WO2005006418A1 (en) * 2003-07-09 2005-01-20 Nikon Corporation Exposure apparatus and method for manufacturing device
WO2005006415A1 (en) 2003-07-09 2005-01-20 Nikon Corporation Exposure apparatus and method for manufacturing device
JP2005026649A (en) * 2002-12-10 2005-01-27 Nikon Corp Exposing method, aligner, and device manufacturing method
EP1503244A1 (en) * 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
WO2005010962A1 (en) * 2003-07-28 2005-02-03 Nikon Corporation Exposure apparatus, device producing method, and exposure apparatus controlling method
WO2005010591A1 (en) * 2003-07-23 2005-02-03 Evotec Technologies Gmbh Device and method for examining chemical and/or biological samples and lens cap
EP1498781A3 (en) * 2003-07-16 2005-02-16 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005045232A (en) * 2003-07-09 2005-02-17 Nikon Corp Exposure device, exposure method, and method for manufacturing device
WO2005015315A2 (en) 2003-07-24 2005-02-17 Carl Zeiss Smt Ag Microlithographic projection exposure system, and method for introducing an immersion liquid into an immersion chamber
WO2005019935A2 (en) * 2003-08-21 2005-03-03 Advanced Micro Devices, Inc. Refractive index system monitor and control for immersion lithography
WO2005019937A1 (en) * 2003-08-25 2005-03-03 Tokyo Ohka Kogyo Co., Ltd. Material for forming resist-protecting film for immersion exposure process, resist-protecting film made of such material, and method for forming resist pattern using such resist-protecting film
WO2005020299A1 (en) 2003-08-21 2005-03-03 Nikon Corporation Exposure apparatus, exposure method, and device producing method
WO2005020298A1 (en) 2003-08-26 2005-03-03 Nikon Corporation Optical element and exposure device
WO2005022616A1 (en) 2003-08-29 2005-03-10 Nikon Corporation Exposure apparatus and device producing method
WO2005022615A1 (en) 2003-08-29 2005-03-10 Nikon Corporation Liquid recovery apparatus, exposure apparatus, exposure method, and device production method
EP1519230A1 (en) * 2003-09-29 2005-03-30 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005031824A1 (en) * 2003-09-29 2005-04-07 Nikon Corporation Projection exposure device, projection exposure method, and device manufacturing method
WO2005031820A1 (en) * 2003-09-26 2005-04-07 Nikon Corporation Projection exposure apparatus, cleaning and maintenance methods of projection exposure apparatus, and method of producing device
WO2005031823A1 (en) * 2003-09-29 2005-04-07 Nikon Corporation Liquid immersion type lens system and projection aligner, device production method
JP2005101487A (en) * 2002-12-10 2005-04-14 Nikon Corp Exposure apparatus, device manufacturing method, and exposure system
WO2005034174A2 (en) * 2003-10-03 2005-04-14 Micronic Laser Systems Ab Method and device for immersion lithography
JP2005101488A (en) * 2002-12-10 2005-04-14 Nikon Corp Aligner, exposure method, and manufacturing method of device
WO2005038888A1 (en) * 2003-10-22 2005-04-28 Nikon Corporation Exposure apparatus, exposure method, and method for manufacturing device
EP1528432A1 (en) * 2003-10-28 2005-05-04 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005041276A1 (en) 2003-10-28 2005-05-06 Nikon Corporation Exposure apparatus, exposure method, and device producing method
WO2005043607A1 (en) * 2003-10-31 2005-05-12 Nikon Corporation Exposure apparatus and device producing method
EP1528433A3 (en) * 2003-10-28 2005-05-18 ASML Netherlands B.V. Lithographic apparatus
WO2005048328A1 (en) * 2003-11-13 2005-05-26 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method
JP2005159322A (en) * 2003-10-31 2005-06-16 Nikon Corp Surface plate, stage apparatus, exposure device and exposing method
WO2005055296A1 (en) * 2003-12-03 2005-06-16 Nikon Corporation Exposure apparatus, exposure method, device producing method, and optical component
WO2005057636A1 (en) * 2003-12-15 2005-06-23 Nikon Corporation Stage system, exposure apparatus and exposure method
WO2005057635A1 (en) * 2003-12-15 2005-06-23 Nikon Corporation Projection exposure apparatus, stage apparatus, and exposure method
WO2005031799A3 (en) * 2003-09-29 2005-06-23 Nippon Kogaku Kk Exposure apparatus, exposure method, and device manufacturing method
WO2005059977A1 (en) * 2003-12-16 2005-06-30 Nikon Corporation Stage apparatus, exposure apparatus, and exposure method
WO2005062351A1 (en) * 2003-12-19 2005-07-07 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method
JP2005183416A (en) * 2003-12-16 2005-07-07 Tadahiro Omi Method of exposure and liquid immersion exposure device
JP2005191344A (en) * 2003-12-26 2005-07-14 Nikon Corp Aligner and manufacturing method of device
JP2005191557A (en) * 2003-12-03 2005-07-14 Nikon Corp Exposure apparatus and method, and manufacturing method of device
WO2005067013A1 (en) 2004-01-05 2005-07-21 Nikon Corporation Exposure apparatus, exposure method, and device producing method
JP2005203681A (en) * 2004-01-19 2005-07-28 Nikon Corp Aligner and exposure method, and device manufacturing method
JP2005208626A (en) * 2003-12-24 2005-08-04 Nikon Corp Microscope and immersion objective lens
WO2005071717A1 (en) * 2004-01-26 2005-08-04 Nikon Corporation Exposure apparatus and device producing method
EP1562080A1 (en) * 2004-02-09 2005-08-10 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1420299A3 (en) * 2002-11-12 2005-08-10 ASML Netherlands B.V. Immersion lithographic apparatus and device manufacturing method
WO2005073811A1 (en) * 2004-01-30 2005-08-11 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition and method of forming resist pattern
WO2005076322A1 (en) * 2004-02-09 2005-08-18 Yoshihiko Okamoto Aligner and semiconductor device manufacturing method using the aligner
WO2005076324A1 (en) * 2004-02-04 2005-08-18 Nikon Corporation Exposure apparatus, exposure method, and device producing method
WO2005076323A1 (en) 2004-02-10 2005-08-18 Nikon Corporation Aligner, device manufacturing method, maintenance method and aligning method
WO2005081292A1 (en) 2004-02-20 2005-09-01 Nikon Corporation Exposure apparatus, supply method and recovery method, exposure method, and device producing method
WO2005081294A1 (en) * 2004-02-20 2005-09-01 Nikon Corporation Exposure device, liquid treating method, exposure method, and device production method
WO2005081290A1 (en) * 2004-02-19 2005-09-01 Nikon Corporation Exposure apparatus and method of producing the device
JP2005252247A (en) * 2004-02-04 2005-09-15 Nikon Corp Exposure device, exposure method, and method of fabricating the device
WO2005085954A1 (en) * 2004-03-05 2005-09-15 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition for immersion exposure and method for forming resist pattern
JP2005252239A (en) * 2004-01-23 2005-09-15 Air Products & Chemicals Inc Immersion lithographic fluid
JP2005259870A (en) * 2004-03-10 2005-09-22 Nikon Corp Substrate retainer, stage device, exposing device and exposing method
JP2005268759A (en) * 2004-02-19 2005-09-29 Nikon Corp Optical component and exposure system
JP2005268742A (en) * 2003-07-28 2005-09-29 Nikon Corp Exposure device and device manufacturing method, and controlling method of its exposure device
US6952253B2 (en) 2002-11-12 2005-10-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1582929A1 (en) * 2004-04-02 2005-10-05 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005277363A (en) * 2003-05-23 2005-10-06 Nikon Corp Exposure device and device manufacturing method
US6954256B2 (en) 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
EP1420298A3 (en) * 2002-11-12 2005-10-12 ASML Netherlands B.V. Immersion lithographic apparatus and device manufacturing method
JP2005302880A (en) * 2004-04-08 2005-10-27 Canon Inc Immersion aligner
WO2005104195A1 (en) * 2004-04-19 2005-11-03 Nikon Corporation Exposure apparatus and device producing method
WO2005106930A1 (en) * 2004-04-27 2005-11-10 Nikon Corporation Exposure method, exposure system, and method for fabricating device
WO2005111722A2 (en) * 2004-05-04 2005-11-24 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
WO2005114711A1 (en) * 2004-05-21 2005-12-01 Jsr Corporation Liquid for immersion exposure and immersion exposure method
WO2005117075A1 (en) * 2004-05-26 2005-12-08 Nikon Corporation Correcting method, predicting method, exposuring method, reflectance correcting method, reflectance measuring method, exposure apparatus, and device manufacturing method
WO2005119742A1 (en) 2004-06-04 2005-12-15 Nikon Corporation Exposure apparatus, exposure method, and device producing method
JP2005347617A (en) * 2004-06-04 2005-12-15 Nikon Corp Aligner and device manufacturing method
WO2005122242A1 (en) * 2004-06-07 2005-12-22 Nikon Corporation Stage apparatus, exposure apparatus, and exposure method
WO2005122220A1 (en) * 2004-06-10 2005-12-22 Nikon Corporation Exposure apparatus, exposure method, and device producing method
WO2005122218A1 (en) 2004-06-09 2005-12-22 Nikon Corporation Exposure system and device production method
EP1610180A2 (en) * 2004-06-09 2005-12-28 Matsushita Electric Industrial Co., Ltd. Semiconductor manufacturing apparatus and pattern formation method
WO2005124420A1 (en) * 2004-06-16 2005-12-29 Nikon Corporation Optical system, exposing apparatus and exposing method
WO2005124833A1 (en) * 2004-06-21 2005-12-29 Nikon Corporation Exposure device, exposure device member cleaning method, exposure device maintenance method, maintenance device, and device manufacturing method
EP1611485A2 (en) * 2003-04-10 2006-01-04 Nikon Corporation Environmental system including vaccum scavange for an immersion lithography apparatus
WO2006005703A1 (en) * 2004-07-09 2006-01-19 Vistec Semiconductor Systems Gmbh Device for inspecting a microscopic component
WO2006006565A1 (en) * 2004-07-12 2006-01-19 Nikon Corporation Exposure equipment and device manufacturing method
WO2006006562A1 (en) 2004-07-12 2006-01-19 Nikon Corporation Method of determining exposure conditions, exposure method, exposure apparatus, and method of producing device
WO2006009064A1 (en) 2004-07-16 2006-01-26 Nikon Corporation Support method and support structure for optical member, optical apparatus, exposure apparatus, and device production method
JP2006024915A (en) * 2004-06-10 2006-01-26 Nikon Corp Exposure system, exposing method, and device manufacturing method
WO2006008934A1 (en) * 2004-07-15 2006-01-26 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method for forming resist pattern
WO2006011607A1 (en) * 2004-07-30 2006-02-02 Tokyo Ohka Kogyo Co., Ltd. Material for forming resist protective film and method for forming resist pattern using same
WO2006013734A1 (en) * 2004-08-03 2006-02-09 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
JP2006049476A (en) * 2004-08-03 2006-02-16 Nikon Corp Aligner and device manufacturing method
WO2006016489A1 (en) * 2004-08-09 2006-02-16 Tokyo Electron Limited Substrate processing method
EP1628163A2 (en) 2004-08-19 2006-02-22 ASML Netherlands BV Lithographic apparatus and device manufacturing method
JP2006054440A (en) * 2004-07-12 2006-02-23 Nikon Corp Determination method of exposure conditions, exposure method, exposure device and device manufacturing method
JP2006053422A (en) * 2004-08-13 2006-02-23 Nikon Corp Microscope observation device
JP2006054427A (en) * 2004-06-09 2006-02-23 Nikon Corp Substrate holding device, aligner having the same, exposure method, method for producing device, and liquid repellent plate
US7009682B2 (en) 2002-11-18 2006-03-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005064405A3 (en) * 2003-12-23 2006-03-09 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
WO2006027942A1 (en) * 2004-09-06 2006-03-16 Tokyo Ohka Kogyo Co., Ltd. Immersion liquid for liquid immersion lithography process and method for forming resist pattern using such immersion liquid
EP1637931A1 (en) * 2004-09-20 2006-03-22 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006030902A1 (en) 2004-09-17 2006-03-23 Nikon Corporation Exposure apparatus, exposure method, and method for manufacturing device
EP1645911A1 (en) 2004-10-07 2006-04-12 ASML Netherlands BV Lithographic apparatus and device manufacturing method
WO2006038952A2 (en) 2004-09-30 2006-04-13 Nikon Corporation Projection optical device and exposure apparatus
EP1647866A1 (en) 2004-10-18 2006-04-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006041100A1 (en) * 2004-10-15 2006-04-20 Nikon Corporation Exposure apparatus and device manufacturing method
WO2006040890A1 (en) * 2004-10-08 2006-04-20 Nikon Corporation Exposure device and device manufacturing method
US7034917B2 (en) 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
JP2006114765A (en) * 2004-10-15 2006-04-27 Toshiba Corp Exposure method and exposure equipment
JP2006114839A (en) * 2004-10-18 2006-04-27 Nikon Corp Projection optical system, aligner and exposure method
US7038760B2 (en) 2003-06-30 2006-05-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006046562A1 (en) 2004-10-26 2006-05-04 Nikon Corporation Substrate processing method, exposure apparatus and method for manufacturing device
US7045018B2 (en) 2002-09-30 2006-05-16 Lam Research Corporation Substrate brush scrubbing and proximity cleaning-drying sequence using compatible chemistries, and method, apparatus, and system for implementing the same
WO2006051689A1 (en) 2004-11-10 2006-05-18 Nikon Corporation Projection optical system, exposure equipment and exposure method
EP1658622A2 (en) * 2003-08-29 2006-05-24 Tokyo Electron Limited Method and system for drying a substrate
WO2006054719A1 (en) 2004-11-19 2006-05-26 Nikon Corporation Maintenance method, exposure method, exposure apparatus, and device producing method
US7053983B2 (en) 2003-09-04 2006-05-30 Canon Kabushiki Kaisha Liquid immersion type exposure apparatus
JP2006140449A (en) * 2004-10-05 2006-06-01 Asml Holdings Nv Lithographic apparatus and device manufacturing method
JP2006148093A (en) * 2004-11-18 2006-06-08 Internatl Business Mach Corp <Ibm> Method and equipment for cleaning semiconductor substrate in immersion lithography system
WO2006059636A1 (en) 2004-12-02 2006-06-08 Nikon Corporation Exposure device and device manufacturing method
WO2006062065A1 (en) * 2004-12-06 2006-06-15 Nikon Corporation Maintenance method, maintenance apparatus, exposure apparatus and device manufacturing method
WO2006062074A1 (en) 2004-12-06 2006-06-15 Nikon Corporation Substrate processing method, exposure method, exposure apparatus, and method for manufacturing device
EP1672432A1 (en) 2004-12-15 2006-06-21 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1672681A1 (en) * 2003-10-08 2006-06-21 Zao Nikon Co., Ltd. Substrate carrying apparatus, substrate carrying method, exposure apparatus, exposure method, and method for producing device
JP2006165502A (en) * 2004-06-21 2006-06-22 Nikon Corp Exposure apparatus, method of cleaning member thereof, maintenance method of exposure apparatus, maintenance device, and device manufacturing method
WO2006064851A1 (en) 2004-12-15 2006-06-22 Nikon Corporation Substrate holding apparatus, exposure apparatus and device manufacturing method
EP1677156A1 (en) 2004-12-30 2006-07-05 ASML Netherlands BV Lithographic apparatus and device manufacturing method
EP1677151A1 (en) 2004-12-28 2006-07-05 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006178274A (en) * 2004-12-24 2006-07-06 Nippon Soda Co Ltd Method for converting surface physical properties of organic thin film
US7075616B2 (en) 2002-11-12 2006-07-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1681597A2 (en) 2005-01-14 2006-07-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7081943B2 (en) 2002-11-12 2006-07-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006201605A (en) * 2005-01-21 2006-08-03 Nikon Corp Microscopic observation apparatus
WO2006080516A1 (en) 2005-01-31 2006-08-03 Nikon Corporation Exposure apparatus and method for manufacturing device
WO2006080250A1 (en) * 2005-01-25 2006-08-03 Jsr Corporation Immersion exposure system, and recycle method and supply method of liquid for immersion exposure
JP2006202836A (en) * 2005-01-18 2006-08-03 Jsr Corp Scanning type exposure method
EP1693708A2 (en) 2005-02-22 2006-08-23 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
EP1696272A2 (en) 2005-02-28 2006-08-30 ASML Netherlands BV A sensor for use in a lithographic apparatus
US7110081B2 (en) 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7113259B2 (en) 2003-10-31 2006-09-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1705695A1 (en) * 2004-01-15 2006-09-27 Nikon Corporation Exposure apparatus and device producing method
US7116395B2 (en) 2003-06-25 2006-10-03 Canon Kabushiki Kaisha Liquid immersion type exposure apparatus
US7119876B2 (en) 2004-10-18 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7127831B2 (en) 2002-09-30 2006-10-31 Lam Research Corporation Methods and systems for processing a substrate using a dynamic liquid meniscus
JP2006303295A (en) * 2005-04-22 2006-11-02 Nikon Corp Exposure apparatus and manufacturing method of device
WO2006115186A1 (en) * 2005-04-25 2006-11-02 Nikon Corporation Exposure method, exposure apparatus and device manufacturing method
US7145630B2 (en) 2004-11-23 2006-12-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006130338A1 (en) * 2005-06-01 2006-12-07 Nikon Corporation Immersion fluid containment system and method for immersion lithography
US7153400B2 (en) 2002-09-30 2006-12-26 Lam Research Corporation Apparatus and method for depositing and planarizing thin films of semiconductor wafers
WO2006137410A1 (en) 2005-06-21 2006-12-28 Nikon Corporation Exposure apparatus, exposure method, maintenance method and device manufacturing method
US7158211B2 (en) 2003-09-29 2007-01-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7161663B2 (en) 2004-07-22 2007-01-09 Asml Netherlands B.V. Lithographic apparatus
US7161654B2 (en) 2004-12-02 2007-01-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007005830A (en) * 2003-07-28 2007-01-11 Nikon Corp Exposure system, exposure method, and method for manufacturing device
JP2007005525A (en) * 2005-06-23 2007-01-11 Nikon Corp Photolithography apparatus and device manufacturing method
US7166418B2 (en) 2003-09-03 2007-01-23 Matsushita Electric Industrial Co., Ltd. Sulfonamide compound, polymer compound, resist material and pattern formation method
US7170583B2 (en) 2005-06-29 2007-01-30 Asml Netherlands B.V. Lithographic apparatus immersion damage control
US7169530B2 (en) 2003-10-02 2007-01-30 Matsushita Electric Industrial Co., Ltd. Polymer compound, resist material and pattern formation method
JP2007027631A (en) * 2005-07-21 2007-02-01 Nikon Corp Exposure method, exposure apparatus, and device manufacturing method
US7175968B2 (en) 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US7177006B2 (en) 2003-12-26 2007-02-13 Canon Kabushiki Kaisha Exposure apparatus and method
KR100683263B1 (en) * 2003-06-09 2007-02-15 에이에스엠엘 네델란즈 비.브이. Lithographic Apparatus and Device Manufacturing Method
US7180574B2 (en) 2004-03-29 2007-02-20 Canon Kabushiki Kaisha Exposure apparatus and method
US7184122B2 (en) 2003-07-24 2007-02-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2007023813A1 (en) 2005-08-23 2007-03-01 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
JP2007053193A (en) * 2005-08-17 2007-03-01 Nikon Corp Exposure apparatus and device manufacturing method
EP1760528A2 (en) 2005-08-31 2007-03-07 Nikon Corporation Optical element, exposure apparatus based on the use of the same, exposure method, and method for producing microdevice
EP1760531A1 (en) 2005-09-06 2007-03-07 ASML Netherlands B.V. Lithographic method
JP2007059929A (en) * 2003-05-23 2007-03-08 Nikon Corp Exposure device and exposure method and device manufacturing method
WO2007026390A1 (en) * 2005-08-30 2007-03-08 Tadahiro Ohmi Scanning exposure apparatus
EP1761822A2 (en) * 2004-07-01 2007-03-14 Nikon Corporation A dynamic fluid control system for immersion lithography
US7193232B2 (en) 2002-11-12 2007-03-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method with substrate measurement not through liquid
US7195860B2 (en) 2003-11-13 2007-03-27 Matsushita Electric Industrial Co., Ltd. Semiconductor manufacturing apparatus and pattern formation method
US7196770B2 (en) 2004-12-07 2007-03-27 Asml Netherlands B.V. Prewetting of substrate before immersion exposure
WO2007034838A1 (en) 2005-09-21 2007-03-29 Nikon Corporation Exposure device, exposure method, and device fabrication method
US7199858B2 (en) 2002-11-12 2007-04-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7198055B2 (en) 2002-09-30 2007-04-03 Lam Research Corporation Meniscus, vacuum, IPA vapor, drying manifold
WO2007040254A1 (en) 2005-10-05 2007-04-12 Nikon Corporation Exposure apparatus and exposure method
US7215410B2 (en) 2004-03-29 2007-05-08 Canon Kabushiki Kaisha Exposure apparatus
WO2007052659A1 (en) 2005-11-01 2007-05-10 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
WO2007055373A1 (en) 2005-11-14 2007-05-18 Nikon Corporation Liquid recovery member, exposure apparatus, exposure method, and device production method
WO2007055199A1 (en) 2005-11-09 2007-05-18 Nikon Corporation Exposure apparatus and method, and method for manufacturing device
US20070117232A1 (en) * 2005-11-07 2007-05-24 Roel Gronheid Method of studying interaction between immersion fluid and substrate
JP2007513518A (en) * 2003-12-03 2007-05-24 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッドAdvanced Micro Devices Incorporated Immersion lithography process using an adaptive immersion medium
US7224434B2 (en) 2004-10-19 2007-05-29 Canon Kabushiki Kaisha Exposure method
US7224431B2 (en) 2005-02-22 2007-05-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1791164A1 (en) * 2004-08-03 2007-05-30 Nikon Corporation Exposure equipment, exposure method and device manufacturing method
US7227616B2 (en) 2002-12-10 2007-06-05 Carl Zeiss Smt Ag Method for improving an optical imaging property of a projection objective of a microlithographic projection exposure apparatus
US7227615B2 (en) 2003-12-26 2007-06-05 Canon Kabushiki Kaisha Exposure apparatus and method
US7227619B2 (en) 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2007066679A1 (en) 2005-12-06 2007-06-14 Nikon Corporation Exposure apparatus, exposure method, projection optical system and device manufacturing method
JP2007516613A (en) * 2003-12-15 2007-06-21 カール・ツアイス・エスエムテイ・アーゲー Objective lens as microlithography projection objective comprising at least one liquid lens
JP2007157827A (en) * 2005-12-01 2007-06-21 Tokyo Ohka Kogyo Co Ltd Method for removing liquid and method for evaluating resist pattern using same
US7234477B2 (en) 2000-06-30 2007-06-26 Lam Research Corporation Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces
WO2007077925A1 (en) 2005-12-28 2007-07-12 Nikon Corporation Pattern formation method, pattern formation device, and device fabrication method
WO2007077875A1 (en) 2005-12-28 2007-07-12 Nikon Corporation Exposure apparatus, exposure method, and device production method
US7248334B2 (en) 2004-12-07 2007-07-24 Asml Netherlands B.V. Sensor shield
JP2007520893A (en) * 2004-02-03 2007-07-26 ロチェスター インスティテュート オブ テクノロジー Photolithography and system using a fluid
WO2007083758A1 (en) 2006-01-19 2007-07-26 Nikon Corporation Moving body drive method, moving body drive system, pattern formation method, pattern formation device, exposure method, exposure device, and device fabrication method
US7251013B2 (en) 2004-11-12 2007-07-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7252097B2 (en) 2002-09-30 2007-08-07 Lam Research Corporation System and method for integrating in-situ metrology within a wafer process
EP1816671A1 (en) * 2004-11-11 2007-08-08 Nikon Corporation Exposure method, device manufacturing method, and substrate
WO2007088872A1 (en) * 2006-02-03 2007-08-09 Nikon Corporation Substrate processing method, substrate processing system, program, and recording medium
US7256868B2 (en) * 2004-02-09 2007-08-14 Canon Kabushiki Kaisha Projection exposure apparatus, device manufacturing method, and sensor unit
US7256864B2 (en) * 2005-04-19 2007-08-14 Asml Holding N.V. Liquid immersion lithography system having a tilted showerhead relative to a substrate
EP1528431A3 (en) * 2003-10-31 2007-08-22 Nikon Corporation Supporting plate, stage device, exposure apparatus and exposure method
WO2007094407A1 (en) 2006-02-16 2007-08-23 Nikon Corporation Exposure apparatus, exposing method, and device manufacturing method
WO2007094470A1 (en) 2006-02-16 2007-08-23 Nikon Corporation Exposure apparatus, exposure method and method for manufacturing device
WO2007097466A1 (en) 2006-02-21 2007-08-30 Nikon Corporation Measuring device and method, processing device and method, pattern forming device and method, exposing device and method, and device fabricating method
WO2007097379A1 (en) 2006-02-21 2007-08-30 Nikon Corporation Pattern forming apparatus, mark detecting apparatus, exposure apparatus, pattern forming method, exposure method and device manufacturing method
WO2007097380A1 (en) 2006-02-21 2007-08-30 Nikon Corporation Pattern forming apparatus, pattern forming method, mobile object driving system, mobile body driving method, exposure apparatus, exposure method and device manufacturing method
WO2007100081A1 (en) 2006-03-03 2007-09-07 Nikon Corporation Exposure method and apparatus, and device manufacturing method
WO2007100087A1 (en) 2006-03-03 2007-09-07 Nikon Corporation Exposure apparatus and device manufacturing method
WO2007105645A1 (en) 2006-03-13 2007-09-20 Nikon Corporation Exposure apparatus, maintenance method, exposure method and device manufacturing method
WO2007108414A1 (en) 2006-03-17 2007-09-27 Nikon Corporation Exposure apparatus and device production method
WO2007108415A1 (en) 2006-03-17 2007-09-27 Nikon Corporation Exposure apparatus and device manufacturing method
JP2007258703A (en) * 2006-03-20 2007-10-04 Asml Netherlands Bv Lithography device, method of manufacturing device, and substrate
WO2007114024A1 (en) 2006-04-03 2007-10-11 Nikon Corporation Projection optical system, aligner, and method for fabricating device
US7283249B2 (en) 2005-04-08 2007-10-16 Asml Netherlands B.V. Lithographic apparatus and a method of calibrating such an apparatus
WO2007119501A1 (en) 2006-03-23 2007-10-25 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
WO2007122977A1 (en) 2006-04-20 2007-11-01 Asahi Glass Company, Limited Material of the resist-protecting membrane for immersion lithography
US7291850B2 (en) 2005-04-08 2007-11-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7293571B2 (en) 2002-09-30 2007-11-13 Lam Research Corporation Substrate proximity processing housing and insert for generating a fluid meniscus
WO2007129753A1 (en) 2006-05-10 2007-11-15 Nikon Corporation Exposure apparatus and device manufacturing method
WO2007135990A1 (en) 2006-05-18 2007-11-29 Nikon Corporation Exposure method and apparatus, maintenance method and device manufacturing method
WO2007136052A1 (en) 2006-05-22 2007-11-29 Nikon Corporation Exposure method and apparatus, maintenance method, and device manufacturing method
WO2007136089A1 (en) 2006-05-23 2007-11-29 Nikon Corporation Maintenance method, exposure method and apparatus, and device manufacturing method
US7304715B2 (en) 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2007138834A1 (en) 2006-05-31 2007-12-06 Nikon Corporation Exposure apparatus and exposure method
WO2007142350A1 (en) 2006-06-09 2007-12-13 Nikon Corporation Pattern formation method, pattern formation device, exposure method, exposure device, and device manufacturing method
US7310132B2 (en) 2006-03-17 2007-12-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7312847B2 (en) * 2002-03-08 2007-12-25 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
WO2008001871A1 (en) 2006-06-30 2008-01-03 Nikon Corporation Maintenance method, exposure method and apparatus and device manufacturing method
US7317507B2 (en) 2005-05-03 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2008004646A1 (en) 2006-07-01 2008-01-10 Nikon Corporation Exposure apparatus that includes a phase change circulation system for movers
WO2008007632A1 (en) 2006-07-12 2008-01-17 Nikon Corporation Illuminating optical apparatus, exposure apparatus and device manufacturing method
WO2008007633A1 (en) 2006-07-12 2008-01-17 Nikon Corporation Illuminating optical apparatus, exposure apparatus and device manufacturing method
KR100797666B1 (en) * 2006-01-16 2008-01-23 다이닛뽕스크린 세이조오 가부시키가이샤 Substrate processing apparatus
US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7324274B2 (en) 2003-12-24 2008-01-29 Nikon Corporation Microscope and immersion objective lens
US7330238B2 (en) 2005-03-28 2008-02-12 Asml Netherlands, B.V. Lithographic apparatus, immersion projection apparatus and device manufacturing method
WO2008026739A1 (en) 2006-08-31 2008-03-06 Nikon Corporation Mobile body drive method and mobile body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
WO2008026709A1 (en) 2006-09-01 2008-03-06 Nikon Corporation Discharge lamp, light source apparatus, exposure apparatus and exposure apparatus manufacturing method
WO2008026732A1 (en) 2006-08-31 2008-03-06 Nikon Corporation Mobile body drive system and mobile body drive method, pattern formation apparatus and method, exposure apparatus and method, device manufacturing method, and decision method
WO2008026742A1 (en) 2006-08-31 2008-03-06 Nikon Corporation Mobile body drive method and mobile body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
US7342640B2 (en) 2005-10-11 2008-03-11 Canon Kabushiki Kaisha Exposure apparatus and method
WO2008029757A1 (en) 2006-09-01 2008-03-13 Nikon Corporation Mobile object driving method, mobile object driving system, pattern forming method and apparatus, exposure method and apparatus, device manufacturing method and calibration method
WO2008029758A1 (en) 2006-09-01 2008-03-13 Nikon Corporation Mobile body driving method, mobile body driving system, pattern forming method and apparatus, exposure method and apparatus and device manufacturing method
US7345737B2 (en) 2003-09-09 2008-03-18 Canon Kabushiki Kaisha Exposure method and apparatus having a projection optical system in which a projection gap is filled with liquid
US7349064B2 (en) 2003-06-27 2008-03-25 Canon Kabushiki Kaisha Immersion exposure technique
EP1903398A1 (en) 2006-09-20 2008-03-26 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2008072147A (en) * 2003-07-31 2008-03-27 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7352434B2 (en) * 2003-05-13 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7352435B2 (en) 2003-10-15 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7352440B2 (en) 2004-12-10 2008-04-01 Asml Netherlands B.V. Substrate placement in immersion lithography
WO2008038751A1 (en) 2006-09-28 2008-04-03 Nikon Corporation Line width measuring method, image forming status detecting method, adjusting method, exposure method and device manufacturing method
US7355674B2 (en) 2004-09-28 2008-04-08 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and computer program product
US7359030B2 (en) 2002-11-29 2008-04-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7362508B2 (en) 2002-08-23 2008-04-22 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
JP2008098681A (en) * 2003-07-28 2008-04-24 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, and substrate
US7365827B2 (en) 2004-12-08 2008-04-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7364839B2 (en) 2002-07-24 2008-04-29 Kabushiki Kaisha Toshiba Method for forming a pattern and substrate-processing apparatus
US7365828B2 (en) 2004-09-03 2008-04-29 Canon Kabushiki Kaisha Exposure apparatus, exposure method, and device manufacturing method
US7372561B2 (en) 2004-05-31 2008-05-13 Hitachi High-Technologies Corporation Method and apparatus for inspecting defects and a system for inspecting defects
EP1921503A2 (en) 2006-11-13 2008-05-14 ASML Netherlands BV Conduit system for a lithographic apparatus, lithographic apparatus, pump, and method for substantially reducing vibrations in a conduit system
WO2008059988A1 (en) 2006-11-16 2008-05-22 Nikon Corporation Surface treatment method and surface treatment apparatus
US7378025B2 (en) 2005-02-22 2008-05-27 Asml Netherlands B.V. Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method
US7379159B2 (en) 2004-05-03 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1926129A1 (en) 2003-11-20 2008-05-28 Nikon Corporation Beam transforming element, illumination optical apparatus, exposure apparatus, and exposure method
US7382434B2 (en) 2004-01-06 2008-06-03 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method
US7383843B2 (en) 2002-09-30 2008-06-10 Lam Research Corporation Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
JP2008135769A (en) * 2003-08-29 2008-06-12 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7389783B2 (en) 2002-09-30 2008-06-24 Lam Research Corporation Proximity meniscus manifold
US7394522B2 (en) 2006-06-30 2008-07-01 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method
WO2008078688A1 (en) 2006-12-27 2008-07-03 Nikon Corporation Stage apparatus, exposure apparatus and device manufacturing method
US7397532B2 (en) 2003-04-10 2008-07-08 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
US7399978B2 (en) 2002-12-19 2008-07-15 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
US7405805B2 (en) 2004-12-28 2008-07-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411658B2 (en) 2005-10-06 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411657B2 (en) 2004-11-17 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411654B2 (en) 2005-04-05 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7414699B2 (en) 2004-11-12 2008-08-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7417710B2 (en) 2005-09-26 2008-08-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7420194B2 (en) 2005-12-27 2008-09-02 Asml Netherlands B.V. Lithographic apparatus and substrate edge seal
EP1965414A1 (en) * 2005-12-06 2008-09-03 Nikon Corporation Exposure method, exposure apparatus, and method for manufacturing device
US7423731B2 (en) 2002-12-03 2008-09-09 Nikon Corporation Illumination optical system, exposure apparatus, and exposure method with polarized switching device
US7423720B2 (en) 2004-11-12 2008-09-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7423955B2 (en) 2003-03-24 2008-09-09 Koninklijke Philips Electronics N.V. Method for recording a lead-out on an optical disc
US7426011B2 (en) 2005-09-12 2008-09-16 Asml Netherlands B.V. Method of calibrating a lithographic apparatus and device manufacturing method
US7426012B2 (en) * 2004-10-18 2008-09-16 Infineon Technologies, Ag Exposure device for immersion lithography and method for monitoring parameters of an exposure device for immersion lithography
US7428038B2 (en) 2005-02-28 2008-09-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid
US7433015B2 (en) 2003-10-15 2008-10-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7433016B2 (en) 2005-05-03 2008-10-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7433050B2 (en) 2005-10-05 2008-10-07 Nikon Corporation Exposure apparatus and exposure method
JP2008252125A (en) * 2008-06-27 2008-10-16 Nikon Corp Liquid immersion projection exposure system provided with cleaning mechanism for optical component and method of cleaning liquid immersion optical component
WO2008129932A1 (en) 2007-04-12 2008-10-30 Nikon Corporation Discharge lamp, cable for connection, light source device, and exposure device
US7446850B2 (en) 2004-12-03 2008-11-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7450217B2 (en) 2005-01-12 2008-11-11 Asml Netherlands B.V. Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby
EP1995769A1 (en) 2003-08-07 2008-11-26 Nikon Corporation Exposure method and exposure apparatus, stage unit, and device manufacturing method
US7459264B2 (en) 2004-07-07 2008-12-02 Kabushiki Kaisha Toshiba Device manufacturing method
CN100440431C (en) 2003-03-04 2008-12-03 东京応化工业株式会社 Immersion liquid for immersion exposure process and resist pattern forming method using such immersion liquid
US7468779B2 (en) 2005-06-28 2008-12-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7474379B2 (en) 2005-06-28 2009-01-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2009011356A1 (en) 2007-07-18 2009-01-22 Nikon Corporation Measurement method, stage apparatus, and exposure apparatus
EP2019335A1 (en) 2007-07-24 2009-01-28 ASML Netherlands B.V. Lithographic apparatus and contamination removal or prevention method
WO2009013905A1 (en) 2007-07-24 2009-01-29 Nikon Corporation Position measuring system, exposure device, position measuring method, exposure method, device manufacturing method, tool, and measuring method
JP2009033200A (en) * 2004-04-14 2009-02-12 Asml Netherlands Bv Lithographic apparatus, and device manufacturing method
US7491661B2 (en) 2004-12-28 2009-02-17 Asml Netherlands B.V. Device manufacturing method, top coat material and substrate
JP2009044168A (en) * 2003-09-03 2009-02-26 Nikon Corp Device and method for supplying fluid for immersion lithography
US7497633B2 (en) 2004-11-10 2009-03-03 Sokudo Co., Ltd. Substrate processing apparatus and substrate processing method
EP2042930A2 (en) 2007-09-27 2009-04-01 ASML Netherlands B.V. Methods relating to immersion lithography
US7513262B2 (en) 2002-09-30 2009-04-07 Lam Research Corporation Substrate meniscus interface and methods for operation
US7514699B2 (en) * 2002-12-19 2009-04-07 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
US7518708B2 (en) 2006-11-10 2009-04-14 Canon Kabushiki Kaisha Liquid-immersion exposure method and liquid-immersion exposure apparatus
US7522258B2 (en) 2005-06-29 2009-04-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method utilizing movement of clean air to reduce contamination
US7522261B2 (en) 2004-09-24 2009-04-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7528930B2 (en) 2004-01-07 2009-05-05 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method
US7528931B2 (en) 2004-12-20 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2056164A1 (en) 2007-10-31 2009-05-06 ASML Netherlands B.V. Cleaning apparatus and immersion lithographic apparatus
EP2058703A1 (en) 2007-11-06 2009-05-13 ASML Netherlands BV Method of preparing a substrate for lithography, a substrate, a device manufacturing method, a sealing coating applicator and a sealing coating measurement apparatus
JP2009105470A (en) * 2009-02-18 2009-05-14 Panasonic Corp Semiconductor manufacturing device and pattern forming method
WO2009060745A1 (en) 2007-11-06 2009-05-14 Nikon Corporation Control device, exposure method, and exposure device
US7535644B2 (en) 2005-08-12 2009-05-19 Asml Netherlands B.V. Lens element, lithographic apparatus, device manufacturing method, and device manufactured thereby
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2073062A1 (en) 2007-12-21 2009-06-24 ASML Netherlands BV Immersion lithographic apparatus and device manufacturing method
WO2009078223A1 (en) 2007-12-17 2009-06-25 Nikon Corporation Spatial light modulating unit, illumination optical system, aligner, and device manufacturing method
WO2009078224A1 (en) 2007-12-17 2009-06-25 Nikon Corporation Illumination optical system, exposure apparatus, and device manufacturing method
US7557997B2 (en) 2006-09-28 2009-07-07 Nikon Corporation Immersion objective optical system, exposure apparatus, device fabrication method, and boundary optical element
US7557529B2 (en) 2005-01-11 2009-07-07 Nikon Corporation Stage unit and exposure apparatus
US7561249B2 (en) 2005-03-18 2009-07-14 Canon Kabushiki Kaisha Exposure apparatus, exposure method, and device manufacturing method
US7573052B2 (en) 2005-11-15 2009-08-11 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
WO2009101958A1 (en) 2008-02-14 2009-08-20 Nikon Corporation Illumination optical system, exposure device, device manufacturing method, correction filter, and exposure optical system
US7583357B2 (en) 2004-11-12 2009-09-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7589818B2 (en) 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
JP2009212539A (en) * 2004-02-18 2009-09-17 Nikon Corp Optical element and exposure apparatus
JP2009224806A (en) * 2003-07-16 2009-10-01 Asml Netherlands Bv Lithographic apparatus, and device manufacturing method
US7599545B2 (en) 2003-09-05 2009-10-06 Hitachi High-Technologies Corporation Method and its apparatus for inspecting defects
WO2009125511A1 (en) 2008-04-11 2009-10-15 株式会社ニコン Spatial light modulating unit, illumination optical system, aligner, and device manufacturing method
US7604424B2 (en) 2005-06-24 2009-10-20 Sokudo Co., Ltd. Substrate processing apparatus
US7614411B2 (en) 2002-09-30 2009-11-10 Lam Research Corporation Controls of ambient environment during wafer drying using proximity head
US7623218B2 (en) 2004-11-24 2009-11-24 Carl Zeiss Smt Ag Method of manufacturing a miniaturized device
EP2128703A1 (en) 2008-05-28 2009-12-02 ASML Netherlands BV Lithographic Apparatus and a Method of Operating the Apparatus
EP2131242A1 (en) 2008-06-02 2009-12-09 ASML Netherlands B.V. Substrate table, lithographic apparatus and device manufacturing method
EP2131241A2 (en) 2008-05-08 2009-12-09 ASML Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method
US7632376B1 (en) 2002-09-30 2009-12-15 Lam Research Corporation Method and apparatus for atomic layer deposition (ALD) in a proximity system
US7633073B2 (en) 2005-11-23 2009-12-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2136250A1 (en) 2008-06-18 2009-12-23 ASML Netherlands B.V. Lithographic apparatus and method
US7641406B2 (en) 2007-07-26 2010-01-05 Sokudo Co., Ltd. Bevel inspection apparatus for substrate processing
US7641405B2 (en) 2007-02-15 2010-01-05 Sokudo Co., Ltd. Substrate processing apparatus with integrated top and edge cleaning unit
US7641404B2 (en) 2006-01-27 2010-01-05 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7652746B2 (en) 2005-06-21 2010-01-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7656502B2 (en) 2006-06-22 2010-02-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7656501B2 (en) 2005-11-16 2010-02-02 Asml Netherlands B.V. Lithographic apparatus
US7658560B2 (en) 2004-11-10 2010-02-09 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus
US7662543B2 (en) 2005-02-10 2010-02-16 Kabushiki Kaisha Toshiba Pattern forming method and method of manufacturing semiconductor device
EP2159639A1 (en) 2008-09-02 2010-03-03 ASML Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method
US7675000B2 (en) 2003-06-24 2010-03-09 Lam Research Corporation System method and apparatus for dry-in, dry-out, low defect laser dicing using proximity technology
EP2161620A1 (en) 2003-04-11 2010-03-10 Nikon Corporation Cleanup method for optics in immersion lithography
US7684010B2 (en) 2005-03-09 2010-03-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, seal structure, method of removing an object and a method of sealing
US7688436B2 (en) 2006-04-27 2010-03-30 Nikon Corporation Measuring and/or inspecting method, measuring and/or inspecting apparatus, exposure method, device manufacturing method, and device manufacturing apparatus
US7692761B2 (en) 2005-03-25 2010-04-06 Canon Kabushiki Kaisha Exposure apparatus and method, and device manufacturing method
US7692765B2 (en) 2007-02-21 2010-04-06 Asml Netherlands B.V. Lithographic apparatus and method of removing liquid
US7690853B2 (en) 2006-01-25 2010-04-06 Sokudo Co., Ltd. Substrate processing apparatus
US7692760B2 (en) 2004-08-05 2010-04-06 Canon Kabushiki Kaisha Liquid immersion exposure apparatus, method of controlling the same, and device manufacturing method
US7700268B2 (en) 2003-12-17 2010-04-20 Panasonic Corporation Exposure system and pattern formation method using the same
US7701551B2 (en) 2006-04-14 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2010093300A (en) * 2010-01-25 2010-04-22 Nikon Corp Flow path forming member, aligner and method for manufacturing device
US7705966B2 (en) 2006-06-15 2010-04-27 Canon Kabushiki Kaisha Immersion exposure apparatus
US7705968B2 (en) 2005-03-18 2010-04-27 Nikon Corporation Plate member, substrate holding device, exposure apparatus and method, and device manufacturing method
JP2010098328A (en) * 2003-09-29 2010-04-30 Nikon Corp Exposure apparatus, method for exposure, and method for manufacturing device
US7710653B2 (en) 2005-01-28 2010-05-04 Nikon Corporation Projection optical system, exposure system, and exposure method
US7713685B2 (en) 2004-06-09 2010-05-11 Panasonic Corporation Exposure system and pattern formation method
US7726891B2 (en) 2004-11-11 2010-06-01 Sokudo Co., Ltd. Substrate processing apparatus and substrate processing method
US7728462B2 (en) 2006-05-18 2010-06-01 Nikon Corporation Monolithic stage devices providing motion in six degrees of freedom
US20100141912A1 (en) * 2004-01-20 2010-06-10 Carl Zeiss Smt Ag Exposure apparatus and measuring device for a projection lens
EP2196857A2 (en) 2008-12-09 2010-06-16 ASML Netherlands BV Lithographic apparatus and device manufacturing method
US7742147B2 (en) 2005-10-11 2010-06-22 Canon Kabushiki Kaisha Exposure apparatus
JP2010141355A (en) * 2003-12-03 2010-06-24 Nikon Corp Exposure apparatus, exposure method, and method for manufacturing device
US7746447B2 (en) 2005-12-22 2010-06-29 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and method of calibrating a lithographic apparatus
US7751027B2 (en) 2005-06-21 2010-07-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7749665B2 (en) 2004-04-19 2010-07-06 Kabushiki Kaisha Toshiba Method of generating writing pattern, method of forming resist pattern, method of controlling exposure tool, and method of manufacturing semiconductor device
JP2010153923A (en) * 2003-08-29 2010-07-08 Asml Netherlands Bv Lithographic apparatus and method of manufacturing device
US7755740B2 (en) * 2007-02-07 2010-07-13 Canon Kabushiki Kaisha Exposure apparatus
US7760324B2 (en) 2006-03-20 2010-07-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7766565B2 (en) 2005-07-01 2010-08-03 Sokudo Co., Ltd. Substrate drying apparatus, substrate cleaning apparatus and substrate processing system
US7773195B2 (en) 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
JP2010183113A (en) * 2003-11-14 2010-08-19 Asml Netherlands Bv Lithographic apparatus, and method of manufacturing the same
JP2010183118A (en) * 2003-06-27 2010-08-19 Asml Holding Nv Immersion photolithography system using inverted wafer-projection optics interface
US7782442B2 (en) 2005-12-06 2010-08-24 Nikon Corporation Exposure apparatus, exposure method, projection optical system and device producing method
US20100214543A1 (en) * 2009-02-19 2010-08-26 Asml Netherlands B.V. Lithographic apparatus, a method of controlling the apparatus and a device manufacturing method
US7791709B2 (en) 2006-12-08 2010-09-07 Asml Netherlands B.V. Substrate support and lithographic process
JP2010199607A (en) * 2010-04-26 2010-09-09 Nikon Corp Exposure apparatus and device manufacturing method
JP2010199606A (en) * 2010-04-26 2010-09-09 Nikon Corp Exposure apparatus and device manufacturing method
US7800733B2 (en) * 2005-07-15 2010-09-21 Imec Methods and systems for improved optical lithographic processing
US7804574B2 (en) 2003-05-30 2010-09-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method using acidic liquid
US7803516B2 (en) 2005-11-21 2010-09-28 Nikon Corporation Exposure method, device manufacturing method using the same, exposure apparatus, and substrate processing method and apparatus
US7804580B2 (en) * 2007-05-11 2010-09-28 Kabushiki Kaisha Toshiba Immersion exposure apparatus and method of manufacturing a semiconductor device
US7804577B2 (en) 2005-11-16 2010-09-28 Asml Netherlands B.V. Lithographic apparatus
US7812926B2 (en) 2005-08-31 2010-10-12 Nikon Corporation Optical element, exposure apparatus based on the use of the same, exposure method, and method for producing microdevice
US7817244B2 (en) * 2002-12-10 2010-10-19 Nikon Corporation Exposure apparatus and method for producing device
US7817245B2 (en) 2003-09-29 2010-10-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2010239146A (en) * 2004-05-18 2010-10-21 Asml Netherlands Bv Lithography device
US7821616B2 (en) 2004-03-24 2010-10-26 Kabushiki Kaisha Toshiba Resist pattern forming method, semiconductor apparatus using said method, and exposure apparatus thereof
US7826030B2 (en) 2006-09-07 2010-11-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2010251802A (en) * 2010-07-28 2010-11-04 Panasonic Corp Semiconductor manufacturing apparatus
JP4572896B2 (en) * 2004-02-19 2010-11-04 株式会社ニコン Manufacturing method for an exposure apparatus and device
US7830046B2 (en) 2007-03-16 2010-11-09 Nikon Corporation Damper for a stage assembly
EP2249205A1 (en) 2008-05-08 2010-11-10 ASML Netherlands BV Immersion lithographic apparatus, drying device, immersion metrology apparatus and device manufacturing method
US7834974B2 (en) 2005-06-28 2010-11-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7839483B2 (en) 2005-12-28 2010-11-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a control system
US7838858B2 (en) 2005-05-31 2010-11-23 Nikon Corporation Evaluation system and method of a search operation that detects a detection subject on an object
US7843550B2 (en) 2003-07-25 2010-11-30 Nikon Corporation Projection optical system inspecting method and inspection apparatus, and a projection optical system manufacturing method
US7843548B2 (en) 2006-11-13 2010-11-30 Asml Netherlands B.V. Conduit system for a lithographic apparatus, lithographic apparatus, pump, and method for substantially reducing vibrations in a conduit system
EP2256553A1 (en) 2009-05-26 2010-12-01 ASML Netherlands B.V. Fluid handling structure and lithographic apparatus
US7852456B2 (en) 2004-10-13 2010-12-14 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7852034B2 (en) 2004-04-09 2010-12-14 Nikon Corporation Drive method of moving body, stage unit, and exposure apparatus
EP2264529A2 (en) 2009-06-16 2010-12-22 ASML Netherlands B.V. A lithographic apparatus, a method of controlling the apparatus and a method of manufacturing a device using a lithographic apparatus
EP2264528A1 (en) 2009-06-19 2010-12-22 ASML Netherlands B.V. Sensor and lithographic apparatus
WO2010147243A2 (en) 2009-06-19 2010-12-23 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
EP2267759A2 (en) 2004-02-02 2010-12-29 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
US7864292B2 (en) 2005-11-16 2011-01-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7864291B2 (en) 2005-03-18 2011-01-04 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method
EP2270597A1 (en) 2003-04-09 2011-01-05 Nikon Corporation Exposure method and apparatus and device manufacturing method
EP2273304A1 (en) 2007-10-24 2011-01-12 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US7872730B2 (en) 2006-09-15 2011-01-18 Nikon Corporation Immersion exposure apparatus and immersion exposure method, and device manufacturing method
US7875418B2 (en) 2004-03-16 2011-01-25 Carl Zeiss Smt Ag Method for a multiple exposure, microlithography projection exposure installation and a projection system
EP2278380A1 (en) 2007-09-14 2011-01-26 Nikon Corporation Design and manufacturing method of an optical element
US7879531B2 (en) 2004-01-23 2011-02-01 Air Products And Chemicals, Inc. Immersion lithography fluids
US7880860B2 (en) * 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7884921B2 (en) 2006-04-12 2011-02-08 Nikon Corporation Illumination optical apparatus, projection exposure apparatus, projection optical system, and device manufacturing method
US7889320B2 (en) 2003-11-13 2011-02-15 Nikon Corporation Variable slit apparatus, illumination apparatus, exposure apparatus, exposure method, and device fabrication method
EP2284614A2 (en) 2003-10-09 2011-02-16 Nikon Corporation Exposure apparatus, exposure method and device producing method
US7894036B2 (en) 2005-09-29 2011-02-22 Canon Kabushiki Kaisha Exposure apparatus
WO2011021444A1 (en) 2009-08-17 2011-02-24 Nikon Corporation Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method
US7898645B2 (en) 2003-10-08 2011-03-01 Zao Nikon Co., Ltd. Substrate transport apparatus and method, exposure apparatus and exposure method, and device fabricating method
WO2011024983A1 (en) 2009-08-25 2011-03-03 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
WO2011024984A1 (en) 2009-08-25 2011-03-03 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
WO2011024985A1 (en) 2009-08-25 2011-03-03 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US7903232B2 (en) 2006-04-12 2011-03-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7907251B2 (en) 2005-10-18 2011-03-15 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method
WO2011030930A1 (en) 2009-09-14 2011-03-17 Nikon Corporation Catadioptric System, Aberration Measuring Apparatus, Method of Adjusting Optical System, Exposure Apparatus, and Device Manufacturing Method
US7914972B2 (en) 2004-07-21 2011-03-29 Nikon Corporation Exposure method and device manufacturing method
US7924404B2 (en) 2007-08-16 2011-04-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7924402B2 (en) 2003-09-19 2011-04-12 Nikon Corporation Exposure apparatus and device manufacturing method
US7924416B2 (en) 2005-06-22 2011-04-12 Nikon Corporation Measurement apparatus, exposure apparatus, and device manufacturing method
JP2011077544A (en) * 2004-06-09 2011-04-14 Nikon Corp Substrate holding device, substrate stage, exposure apparatus, exposure method, method for producing device, and liquid repellent plate
US7927428B2 (en) 2006-09-08 2011-04-19 Nikon Corporation Cleaning member, cleaning method, and device manufacturing method
JP2011086968A (en) * 2011-01-31 2011-04-28 Nikon Corp Exposure device and method of manufacturing device
US7936441B2 (en) 2005-05-12 2011-05-03 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
WO2011052703A1 (en) 2009-10-30 2011-05-05 Nikon Corporation Exposure apparatus and device manufacturing method
US7941232B2 (en) 2004-06-29 2011-05-10 Nikon Corporation Control method, control system, and program
US7948604B2 (en) 2002-12-10 2011-05-24 Nikon Corporation Exposure apparatus and method for producing device
US7948616B2 (en) 2007-04-12 2011-05-24 Nikon Corporation Measurement method, exposure method and device manufacturing method
EP2325866A1 (en) 2004-09-17 2011-05-25 Nikon Corporation Substrate holding device, exposure apparatus and device manufacturing method
US7965387B2 (en) 2004-07-23 2011-06-21 Nikon Corporation Image plane measurement method, exposure method, device manufacturing method, and exposure apparatus
US7973910B2 (en) 2006-11-17 2011-07-05 Nikon Corporation Stage apparatus and exposure apparatus
WO2011081215A1 (en) 2009-12-28 2011-07-07 Nikon Corporation Movable body drive method, movable body apparatus, exposure method, exposure apparatus, and device manufacturing method
US7975708B2 (en) 2007-03-30 2011-07-12 Lam Research Corporation Proximity head with angled vacuum conduit system, apparatus and method
JP2011160000A (en) * 2004-02-03 2011-08-18 Nikon Corp Exposure apparatus and method of manufacturing device
US8004651B2 (en) 2007-01-23 2011-08-23 Nikon Corporation Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method
US8004658B2 (en) 2004-10-19 2011-08-23 Nikon Corporation Lighting optical device, exposure system, and exposure method
JP2011166173A (en) * 2003-04-11 2011-08-25 Nikon Corp Immersion lithography machine, and method of manufacturing device
WO2011105308A1 (en) 2010-02-25 2011-09-01 Nikon Corporation Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method
WO2011105307A1 (en) 2010-02-25 2011-09-01 Nikon Corporation Measuring method and measuring apparatus of pupil transmittance distribution, exposure method and exposure apparatus, and device manufacturing method
US8013975B2 (en) 2006-12-01 2011-09-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
EP2365390A2 (en) 2010-03-12 2011-09-14 ASML Netherlands B.V. Lithographic apparatus and method
US8023106B2 (en) 2007-08-24 2011-09-20 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
US8023101B2 (en) 2006-05-18 2011-09-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8027019B2 (en) 2006-03-28 2011-09-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8031324B2 (en) 2007-02-15 2011-10-04 Sokudo Co., Ltd. Substrate processing apparatus with integrated cleaning unit
US8035796B2 (en) 2007-06-27 2011-10-11 Canon Kabushiki Kaisha Immersion exposure apparatus and device manufacturing method
US8034190B2 (en) 2004-11-10 2011-10-11 Sokudo Co., Ltd. Substrate processing apparatus and substrate processing method
US8035799B2 (en) 2004-12-09 2011-10-11 Nikon Corporation Exposure apparatus, exposure method, and device producing method
US8040488B2 (en) 2004-12-06 2011-10-18 Sokudo Co., Ltd. Substrate processing apparatus
US8040490B2 (en) 2006-12-01 2011-10-18 Nikon Corporation Liquid immersion exposure apparatus, exposure method, and method for producing device
US8045135B2 (en) 2006-11-22 2011-10-25 Asml Netherlands B.V. Lithographic apparatus with a fluid combining unit and related device manufacturing method
US8045134B2 (en) 2006-03-13 2011-10-25 Asml Netherlands B.V. Lithographic apparatus, control system and device manufacturing method
EP2381310A1 (en) 2010-04-22 2011-10-26 ASML Netherlands BV Fluid handling structure, lithographic apparatus and device manufacturing method
US8054445B2 (en) 2005-08-16 2011-11-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8054465B2 (en) 2004-11-18 2011-11-08 Nikon Corporation Position measurement method
US8059257B2 (en) 2006-09-04 2011-11-15 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method
US8062471B2 (en) 2004-03-31 2011-11-22 Lam Research Corporation Proximity head heating method and apparatus
US8070145B2 (en) 2005-08-26 2011-12-06 Nikon Corporation Holding unit, assembly system, sputtering unit, and processing method and processing unit
WO2011158912A1 (en) 2010-06-19 2011-12-22 株式会社ニコン Illuminating optical system, expose device, and device production method
JP4845880B2 (en) * 2004-06-04 2011-12-28 カール・ツァイス・エスエムティー・ゲーエムベーハー Optical imaging system image quality measurement system
US8090875B2 (en) 2005-10-28 2012-01-03 Nikon Corporation Device and method for connecting device manufacturing processing apparatuses, program, device manufacturing processing system, exposure apparatus and method, and measurement and inspection apparatus and method
US8089615B2 (en) 2005-12-08 2012-01-03 Nikon Corporation Substrate holding apparatus, exposure apparatus, exposing method, and device fabricating method
US8089608B2 (en) 2005-04-18 2012-01-03 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8094290B2 (en) 2007-11-06 2012-01-10 Nikon Corporation Illumination optical apparatus, exposure apparatus, and device manufacturing method
US8111406B2 (en) 2007-11-14 2012-02-07 Nikon Corporation Surface position detecting apparatus, surface position detecting method, exposure apparatus, and device manufacturing method
US8111374B2 (en) 2005-09-09 2012-02-07 Nikon Corporation Analysis method, exposure method, and device manufacturing method
US8120763B2 (en) 2002-12-20 2012-02-21 Carl Zeiss Smt Gmbh Device and method for the optical measurement of an optical system by using an immersion fluid
US8125610B2 (en) 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US8125613B2 (en) 2006-04-21 2012-02-28 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
EP2423749A1 (en) 2010-08-24 2012-02-29 ASML Netherlands BV A lithographic apparatus and device manufacturing method
KR101119813B1 (en) 2003-12-15 2012-03-06 가부시키가이샤 니콘 Stage system, exposure apparatus and exposure method
US8129097B2 (en) 2008-01-02 2012-03-06 Asml Netherlands B.V. Immersion lithography
US8134681B2 (en) 2006-02-17 2012-03-13 Nikon Corporation Adjustment method, substrate processing method, substrate processing apparatus, exposure apparatus, inspection apparatus, measurement and/or inspection system, processing apparatus, computer system, program and information recording medium
US8134685B2 (en) 2007-03-23 2012-03-13 Nikon Corporation Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method
US8133663B2 (en) 2006-08-08 2012-03-13 Tokyo Electron Limited Pattern forming method and apparatus
WO2012033933A1 (en) 2010-09-09 2012-03-15 Nikon Corporation Parallel linkage and actuator motor coil designs for a tube carrier
US8139199B2 (en) 2007-04-02 2012-03-20 Nikon Corporation Exposure method, exposure apparatus, light converging pattern formation member, mask, and device manufacturing method
US8142964B2 (en) 2008-07-25 2012-03-27 Asml Netherlands B.V. Method of designing sets of mask patterns, sets of mask patterns, and device manufacturing method
US8144308B2 (en) 2007-11-08 2012-03-27 Nikon Corporation Spatial light modulation unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US8141566B2 (en) 2007-06-19 2012-03-27 Lam Research Corporation System, method and apparatus for maintaining separation of liquids in a controlled meniscus
US8149381B2 (en) 2003-08-26 2012-04-03 Nikon Corporation Optical element and exposure apparatus
US8149379B2 (en) 2007-12-03 2012-04-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8159650B2 (en) 2006-03-07 2012-04-17 Nikon Corporation Device manufacturing method, device manufacturing system, and measurement/inspection apparatus
US8164736B2 (en) 2007-05-29 2012-04-24 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US8174669B2 (en) 2004-09-06 2012-05-08 Kabushiki Kaisha Toshiba Liquid immersion optical tool, method for cleaning liquid immersion optical tool, liquid immersion exposure method and method for manufacturing semiconductor device
US8179517B2 (en) 2005-06-30 2012-05-15 Nikon Corporation Exposure apparatus and method, maintenance method for exposure apparatus, and device manufacturing method
US8189168B2 (en) 2007-05-28 2012-05-29 Nikon Corporation Exposure apparatus, device production method, cleaning apparatus, cleaning method, and exposure method
US8194232B2 (en) 2007-07-24 2012-06-05 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, position control method and position control system, and device manufacturing method
US8208128B2 (en) 2008-02-08 2012-06-26 Nikon Corporation Position measuring system and position measuring method, Movable body apparatus, movable body drive method, exposure apparatus and exposure method, pattern forming apparatus, and device manufacturing method
EP2472332A1 (en) 2004-11-01 2012-07-04 Nikon Corporation Exposure apparatus and device fabricating method
JP2012129561A (en) * 2004-06-10 2012-07-05 Nikon Corp Exposure apparatus, exposure method, and device manufacturing method
US8218126B2 (en) 2007-12-10 2012-07-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8218124B2 (en) 2007-09-13 2012-07-10 Sokudo Co., Ltd. Substrate processing apparatus with multi-speed drying having rinse liquid supplier that moves from center of rotated substrate to its periphery and stops temporarily so that a drying core can form
US8218129B2 (en) 2007-08-24 2012-07-10 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, measuring method, and position measurement system
JP2012134554A (en) * 2004-09-17 2012-07-12 Nikon Corp Exposure device, exposure method, and device manufacturing method
US8233134B2 (en) 2007-09-25 2012-07-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8237919B2 (en) 2007-08-24 2012-08-07 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method for continuous position measurement of movable body before and after switching between sensor heads
US8237911B2 (en) 2007-03-15 2012-08-07 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
US8236467B2 (en) 2005-04-28 2012-08-07 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
US8237916B2 (en) 2007-12-28 2012-08-07 Nikon Corporation Movable body drive system, pattern formation apparatus, exposure apparatus and exposure method, and device manufacturing method
US8236382B2 (en) 2002-09-30 2012-08-07 Lam Research Corporation Proximity substrate preparation sequence, and method, apparatus, and system for implementing the same
US8243255B2 (en) 2007-12-20 2012-08-14 Asml Netherlands B.V. Lithographic apparatus and in-line cleaning apparatus
US8248577B2 (en) 2005-05-03 2012-08-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2490073A1 (en) 2011-02-18 2012-08-22 ASML Netherlands BV Substrate holder, lithographic apparatus, and method of manufacturing a substrate holder
DE112010002795T5 (en) 2009-07-01 2012-08-23 Nikon Corporation Grinding device, grinding method, exposure apparatus and methods of manufacturing a device
US8253921B2 (en) 2003-09-03 2012-08-28 Nikon Corporation Exposure apparatus and device fabricating method
US8259283B2 (en) 2008-03-24 2012-09-04 Asml Netherlands B.V. Immersion lithographic apparatus and device manufacturing method
US8264669B2 (en) 2007-07-24 2012-09-11 Nikon Corporation Movable body drive method, pattern formation method, exposure method, and device manufacturing method for maintaining position coordinate before and after switching encoder head
US8269945B2 (en) 2007-12-28 2012-09-18 Nikon Corporation Movable body drive method and apparatus, exposure method and apparatus, pattern formation method and apparatus, and device manufacturing method
US8274641B2 (en) 2008-06-02 2012-09-25 Asml Netherlands B.V. Substrate table, lithographic apparatus and device manufacturing method
US8279396B2 (en) 2007-12-03 2012-10-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8286293B2 (en) 2007-07-26 2012-10-16 Sokudo Co., Ltd. Substrate cleaning device and substrate processing apparatus including the same
US8294878B2 (en) 2009-06-19 2012-10-23 Nikon Corporation Exposure apparatus and device manufacturing method
US8300213B2 (en) 2007-10-12 2012-10-30 Nikon Corporation Illumination optics apparatus, exposure method, exposure apparatus, and method of manufacturing electronic device
US8300207B2 (en) 2007-05-17 2012-10-30 Nikon Corporation Exposure apparatus, immersion system, exposing method, and device fabricating method
US8319157B2 (en) 2009-07-27 2012-11-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8323855B2 (en) 2007-03-01 2012-12-04 Nikon Corporation Pellicle frame apparatus, mask, exposing method, exposure apparatus, and device fabricating method
KR101211570B1 (en) 2005-02-10 2012-12-12 에이에스엠엘 네델란즈 비.브이. The immersion liquid, the exposure apparatus, and exposure process
WO2012172705A1 (en) 2011-06-13 2012-12-20 株式会社ニコン Illumination optical assembly, exposure device, and device manufacture method
US8339572B2 (en) 2008-01-25 2012-12-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8339614B2 (en) 2005-03-25 2012-12-25 Nikon Corporation Method of measuring shot shape and mask
WO2012176941A1 (en) 2011-06-24 2012-12-27 Nikon Corporation Method and apparatus to allow a plurality of stages to operate in close proximity
CN101470362B (en) 2003-07-09 2013-01-02 株式会社尼康 Exposure apparatus and device manufacturing method
US8355114B2 (en) 2009-06-19 2013-01-15 Nikon Corporation Exposure apparatus and device manufacturing method
US8355116B2 (en) 2009-06-19 2013-01-15 Nikon Corporation Exposure apparatus and device manufacturing method
US8356424B2 (en) 2006-07-24 2013-01-22 Dainippon Screen Mfg. Co., Ltd. Substrate processing method
US8358401B2 (en) 2008-04-11 2013-01-22 Nikon Corporation Stage apparatus, exposure apparatus and device manufacturing method
US8363206B2 (en) 2006-05-09 2013-01-29 Carl Zeiss Smt Gmbh Optical imaging device with thermal attenuation
US8368870B2 (en) 2004-06-21 2013-02-05 Nikon Corporation Exposure apparatus and device manufacturing method
EP2560050A1 (en) 2011-08-18 2013-02-20 ASML Netherlands B.V. Support table, lithographic apparatus and device manufacturing method
US8384875B2 (en) 2008-09-29 2013-02-26 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8390779B2 (en) 2006-02-16 2013-03-05 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP2013051429A (en) * 2012-10-19 2013-03-14 Nikon Corp Exposure device, and device manufacturing method
US8400613B2 (en) 2005-05-02 2013-03-19 Nikon Corporation Optical element driving apparatus, projection optical system, exposure apparatus and device manufacturing method
US8405815B2 (en) 2009-06-09 2013-03-26 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method
US8405819B2 (en) 2009-05-08 2013-03-26 Asml Netherlands B.V. Immersion lithographic apparatus and device manufacturing method
US8411271B2 (en) 2005-12-28 2013-04-02 Nikon Corporation Pattern forming method, pattern forming apparatus, and device manufacturing method
KR101250155B1 (en) 2004-03-25 2013-04-05 가부시키가이샤 니콘 Exposure apparatus and method for manufacturing device
US8416383B2 (en) 2006-12-13 2013-04-09 Asml Netherlands B.V. Lithographic apparatus and method
US8416388B2 (en) 2009-04-10 2013-04-09 Asml Netherlands B.V. Fluid handling device, an immersion lithographic apparatus and a device manufacturing method
US8416515B2 (en) 2004-06-29 2013-04-09 Carl Zeiss Smt Gmbh Positioning unit and alignment device for an optical element
US8421993B2 (en) 2008-05-08 2013-04-16 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method
US8427627B2 (en) 2008-03-07 2013-04-23 Asml Netherlands B.V. Lithographic apparatus and methods
KR101258449B1 (en) * 2009-12-02 2013-04-26 에이에스엠엘 네델란즈 비.브이. Lithographic apparatus and surface cleaning method
US8432531B2 (en) 2009-10-02 2013-04-30 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus
US8432534B2 (en) 2006-11-09 2013-04-30 Nikon Corporation Holding apparatus, position detection apparatus and exposure apparatus, moving method, position detection method, exposure method, adjustment method of detection system and device manufacturing method
US8435593B2 (en) 2007-05-22 2013-05-07 Asml Netherlands B.V. Method of inspecting a substrate and method of preparing a substrate for lithography
US8436981B2 (en) 2008-01-10 2013-05-07 Nikon Corporation Exposing method, exposure apparatus, and device fabricating method
US8436984B2 (en) 2008-12-18 2013-05-07 Asml Netherlands B.V. Lithographic apparatus and method of irradiating at least two target portions
US8441609B2 (en) 2008-06-26 2013-05-14 Asml Netherlands B.V. Lithographic apparatus and a method of operating the lithographic apparatus
US8446579B2 (en) 2008-05-28 2013-05-21 Nikon Corporation Inspection device and inspecting method for spatial light modulator, illumination optical system, method for adjusting the illumination optical system, exposure apparatus, and device manufacturing method
US8446561B2 (en) 2009-06-30 2013-05-21 Asml Netherlands B.V. Lithographic apparatus and a method of measuring flow rate in a two phase flow
US8451430B2 (en) 2008-12-24 2013-05-28 Nikon Corporation Illumination optical system, exposure apparatus, and device manufacturing method
US8451422B2 (en) 2008-02-21 2013-05-28 Asml Netherlands B.V. Re-flow and buffer system for immersion lithography
US8462313B2 (en) 2009-06-19 2013-06-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8462317B2 (en) 2007-10-16 2013-06-11 Nikon Corporation Illumination optical system, exposure apparatus, and device manufacturing method
US8462314B2 (en) 2007-08-02 2013-06-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8464736B1 (en) 2007-03-30 2013-06-18 Lam Research Corporation Reclaim chemistry
US8472003B2 (en) 2009-06-30 2013-06-25 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method
US8472008B2 (en) 2009-06-19 2013-06-25 Nikon Corporation Movable body apparatus, exposure apparatus and device manufacturing method
US8477301B2 (en) 2009-09-15 2013-07-02 Sokudo Co., Ltd. Substrate processing apparatus, substrate processing system and inspection/periphery exposure apparatus
EP2615480A1 (en) 2004-02-06 2013-07-17 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US8496761B2 (en) 2004-11-10 2013-07-30 Sokudo Co., Ltd. Substrate processing apparatus and substrate processing method
US8502960B2 (en) 2009-07-13 2013-08-06 Asml Netherlands B.V. Heat transfer assembly, lithographic apparatus and manufacturing method
WO2013113568A2 (en) 2012-02-03 2013-08-08 Asml Netherlands B.V. Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder
US8508711B2 (en) 2008-08-22 2013-08-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8508712B2 (en) 2008-10-23 2013-08-13 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method
US8514365B2 (en) 2007-06-01 2013-08-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8512817B2 (en) 2009-12-03 2013-08-20 Asml Netherlands B.V. Lithographic apparatus and a method of forming a lyophobic coating on a surface
US8540824B2 (en) 2005-09-25 2013-09-24 Sokudo Co., Ltd. Substrate processing method
US20130250268A1 (en) * 2003-10-28 2013-09-26 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
US8547527B2 (en) 2007-07-24 2013-10-01 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and pattern formation apparatus, and device manufacturing method
US8553206B2 (en) 2009-09-21 2013-10-08 Asml Netherlands B.V. Lithographic apparatus, coverplate and device manufacturing method
US8564757B2 (en) 2009-05-14 2013-10-22 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus
US8564763B2 (en) 2008-05-08 2013-10-22 Asml Netherlands B.V. Lithographic apparatus and method
WO2013156236A1 (en) 2012-04-19 2013-10-24 Asml Netherlands B.V. Substrate holder, lithographic apparatus, and device manufacturing method
US8570484B2 (en) 2006-08-30 2013-10-29 Nikon Corporation Immersion exposure apparatus, device manufacturing method, cleaning method, and cleaning member to remove foreign substance using liquid
EP2660854A2 (en) 2005-05-12 2013-11-06 Nikon Corporation Projection optical system, exposure apparatus and exposure method
US8580045B2 (en) 2009-05-29 2013-11-12 Lam Research Corporation Method and apparatus for physical confinement of a liquid meniscus over a semiconductor wafer
WO2013171013A1 (en) 2012-05-17 2013-11-21 Asml Netherlands B.V. Thermal conditioning unit, lithographic apparatus and device manufacturing method
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US8860922B2 (en) 2003-10-28 2014-10-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US8867022B2 (en) 2007-08-24 2014-10-21 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, and device manufacturing method
US8879159B2 (en) 2005-06-14 2014-11-04 Carl Zeiss Smt Gmbh Lithography projection objective, and a method for correcting image defects of the same
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US8891053B2 (en) 2008-09-10 2014-11-18 Asml Netherlands B.V. Lithographic apparatus, method of manufacturing an article for a lithographic apparatus and device manufacturing method
US8889042B2 (en) 2008-02-14 2014-11-18 Asml Netherlands B.V. Coatings
US8894775B2 (en) 2007-09-13 2014-11-25 Screen Semiconductor Solutions Co., Ltd. Substrate processing apparatus and substrate processing method
US8902400B2 (en) 2010-03-04 2014-12-02 Asml Netherlands B.V. Lithographic apparatus and a method of manufacturing a device using a lithographic apparatus
US8902399B2 (en) * 2004-10-05 2014-12-02 Asml Netherlands B.V. Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus
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US8913228B2 (en) 2006-04-06 2014-12-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US8928857B2 (en) 2009-05-01 2015-01-06 Asml Netherlands B.V. Lithographic apparatus and method of operating the apparatus
US8932672B2 (en) 2006-02-02 2015-01-13 Screen Semiconductor Solutions Co., Ltd. Substrate processing apparatus
US8941815B2 (en) 2009-06-30 2015-01-27 Asml Netherlands B.V. Substrate table for a lithographic apparatus, lithographic apparatus, method of using a substrate table and device manufacturing method
US8941809B2 (en) 2008-12-22 2015-01-27 Screen Semiconductor Solutions Co., Ltd. Substrate processing apparatus and substrate processing method
US8947635B2 (en) 2008-12-24 2015-02-03 Nikon Corporation Illumination optical system, exposure apparatus, and device manufacturing method
US8947637B2 (en) 2003-08-29 2015-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8945800B2 (en) 2012-08-20 2015-02-03 Asml Netherlands B.V. Method of preparing a pattern, method of forming a mask set, device manufacturing method and computer program
US8964166B2 (en) 2007-12-17 2015-02-24 Nikon Corporation Stage device, exposure apparatus and method of producing device
US8970822B2 (en) 2011-08-17 2015-03-03 Asml Netherlands B.V. Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method
US8982316B2 (en) 2008-06-16 2015-03-17 Asml Netherlands B.V. Lithographic apparatus, a metrology apparatus and a method of using the apparatus
US8993220B2 (en) 2009-04-10 2015-03-31 Asml Netherlands B.V. Immersion lithographic apparatus and a device manufacturing method
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US9013673B2 (en) 2009-12-02 2015-04-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US9036127B2 (en) 2008-04-16 2015-05-19 Asml Netherlands B.V. Lithographic apparatus
EP2853943A3 (en) * 2003-07-08 2015-05-27 Nikon Corporation Wafer table for immersion lithography
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WO2015106860A1 (en) 2014-01-20 2015-07-23 Asml Netherlands B.V. Substrate holder and support table for lithography
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US9316927B2 (en) 2011-10-14 2016-04-19 Asml Netherlands B.V. Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder
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US9341956B2 (en) 2009-12-23 2016-05-17 Nikon Corporation Spatial light modulator unit, illumination optical system, exposure device, and device manufacturing method
US9354528B2 (en) 2011-04-27 2016-05-31 Asml Netherlands B.V. Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder
WO2016096508A1 (en) 2014-12-19 2016-06-23 Asml Netherlands B.V. A fluid handling structure, a lithographic apparatus and a device manufacturing method
US9377697B2 (en) 2012-12-20 2016-06-28 Asml Netherlands B.V. Lithographic apparatus and table for use in such an apparatus
JP2016136273A (en) * 2016-03-07 2016-07-28 株式会社ニコン Projection optical system, exposure device, exposure method and device fabrication method
US9423699B2 (en) 2010-12-14 2016-08-23 Asml Netherlands B.V. Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder
US20160282597A1 (en) * 2007-09-13 2016-09-29 Ge Healthcare Bio-Sciences Corp. Dispersing Immersion Liquid for High Resolution Imaging and Lithography
US9465293B2 (en) 2012-08-29 2016-10-11 Screen Semiconductor Solutions Co., Ltd. Substrate processing apparatus and substrate processing method
US9477158B2 (en) 2006-04-14 2016-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US9500943B2 (en) 2003-05-06 2016-11-22 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US9507270B2 (en) 2004-06-16 2016-11-29 Asml Netherlands B.V. Vacuum system for immersion photolithography
US9513560B2 (en) 2011-10-24 2016-12-06 Nikon Corporation Illumination optical assembly, exposure apparatus, and device manufacturing method
WO2016198255A1 (en) 2015-06-11 2016-12-15 Asml Netherlands B.V. Lithographic apparatus and method for loading a substrate
WO2017009393A1 (en) 2015-07-16 2017-01-19 Asml Netherlands B.V. A lithographic apparatus, a projection system, a last lens element, a liquid control member and a device manufacturing method
US9563132B2 (en) 2011-08-05 2017-02-07 Asml Netherlands B.V. Fluid handling structure, a lithographic apparatus and a device manufacturing method
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US9606429B2 (en) 2008-08-19 2017-03-28 Asml Netherlands B.V. Lithographic apparatus, drying device, metrology apparatus and device manufacturing method
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US9703199B2 (en) 2004-12-06 2017-07-11 Screen Semiconductor Solutions Co., Ltd. Substrate processing apparatus
WO2017121547A1 (en) 2016-01-13 2017-07-20 Asml Netherlands B.V. Fluid handling structure and lithographic apparatus
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WO2018072943A1 (en) 2016-10-20 2018-04-26 Asml Netherlands B.V. A pressure control valve, a fluid handling structure for lithographic apparatus and a lithographic apparatus
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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57153433A (en) * 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS6265326A (en) * 1985-09-18 1987-03-24 Hitachi Ltd Exposure device
JPH06124873A (en) * 1992-10-09 1994-05-06 Canon Inc Liquid-soaking type projection exposure apparatus
JPH07220990A (en) * 1994-01-28 1995-08-18 Hitachi Ltd Pattern forming method and exposure apparatus therefor
JPH10255319A (en) * 1997-03-12 1998-09-25 Hitachi Maxell Ltd Master disk exposure device and method therefor
JPH10303114A (en) * 1997-04-23 1998-11-13 Nikon Corp Immersion aligner
JPH10340846A (en) * 1997-06-10 1998-12-22 Nikon Corp Aligner, its manufacture, exposing method and device manufacturing method

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57153433A (en) * 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS6265326A (en) * 1985-09-18 1987-03-24 Hitachi Ltd Exposure device
JPH06124873A (en) * 1992-10-09 1994-05-06 Canon Inc Liquid-soaking type projection exposure apparatus
JPH07220990A (en) * 1994-01-28 1995-08-18 Hitachi Ltd Pattern forming method and exposure apparatus therefor
JPH10255319A (en) * 1997-03-12 1998-09-25 Hitachi Maxell Ltd Master disk exposure device and method therefor
JPH10303114A (en) * 1997-04-23 1998-11-13 Nikon Corp Immersion aligner
JPH10340846A (en) * 1997-06-10 1998-12-22 Nikon Corp Aligner, its manufacture, exposing method and device manufacturing method

Cited By (2318)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7234477B2 (en) 2000-06-30 2007-06-26 Lam Research Corporation Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces
US6844919B2 (en) 2000-12-11 2005-01-18 Yutaka Suenaga Projection optical system and exposure apparatus having the projection optical system
JP2003086486A (en) * 2001-09-11 2003-03-20 Canon Inc Aligner
US7312847B2 (en) * 2002-03-08 2007-12-25 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
US7364839B2 (en) 2002-07-24 2008-04-29 Kabushiki Kaisha Toshiba Method for forming a pattern and substrate-processing apparatus
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US7701640B2 (en) 2002-08-23 2010-04-20 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
US7362508B2 (en) 2002-08-23 2008-04-22 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
US7609455B2 (en) 2002-08-23 2009-10-27 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
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US7551362B2 (en) 2002-08-23 2009-06-23 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
US7127831B2 (en) 2002-09-30 2006-10-31 Lam Research Corporation Methods and systems for processing a substrate using a dynamic liquid meniscus
US7389783B2 (en) 2002-09-30 2008-06-24 Lam Research Corporation Proximity meniscus manifold
US7153400B2 (en) 2002-09-30 2006-12-26 Lam Research Corporation Apparatus and method for depositing and planarizing thin films of semiconductor wafers
US7264007B2 (en) 2002-09-30 2007-09-04 Lam Research Corporation Method and apparatus for cleaning a substrate using megasonic power
US7632376B1 (en) 2002-09-30 2009-12-15 Lam Research Corporation Method and apparatus for atomic layer deposition (ALD) in a proximity system
US7198055B2 (en) 2002-09-30 2007-04-03 Lam Research Corporation Meniscus, vacuum, IPA vapor, drying manifold
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EP1429188A3 (en) * 2002-11-12 2004-10-13 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
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US7227616B2 (en) 2002-12-10 2007-06-05 Carl Zeiss Smt Ag Method for improving an optical imaging property of a projection objective of a microlithographic projection exposure apparatus
WO2004053956A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus, exposure method and method for manufacturing device
JP2004282023A (en) * 2002-12-10 2004-10-07 Nikon Corp Exposure apparatus and method for manufacturing device
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US7639343B2 (en) 2002-12-10 2009-12-29 Nikon Corporation Exposure apparatus and device manufacturing method
EP1429190A3 (en) * 2002-12-10 2007-06-27 Canon Kabushiki Kaisha Exposure apparatus and method
WO2004053959A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Optical device and projection exposure apparatus using such optical device
KR101157002B1 (en) * 2002-12-10 2012-06-21 가부시키가이샤 니콘 Exposure apparatus and method for manufacturing device
US7358507B2 (en) 2002-12-13 2008-04-15 Koninklijke Philips Electronics N.V. Liquid removal in a method and device for irradiating spots on a layer
KR100967835B1 (en) * 2002-12-13 2010-07-05 코닌클리케 필립스 일렉트로닉스 엔.브이. Liquid removal in a method and device for irradiating spots on a layer
WO2004055803A1 (en) * 2002-12-13 2004-07-01 Koninklijke Philips Electronics N.V. Liquid removal in a method and device for irradiating spots on a layer
US7514699B2 (en) * 2002-12-19 2009-04-07 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
USRE46433E1 (en) 2002-12-19 2017-06-13 Asml Netherlands B.V. Method and device for irradiating spots on a layer
US7399978B2 (en) 2002-12-19 2008-07-15 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
KR100971440B1 (en) 2002-12-19 2010-07-21 코닌클리케 필립스 일렉트로닉스 엔.브이. Method and device for irradiating spots on a layer
US8120763B2 (en) 2002-12-20 2012-02-21 Carl Zeiss Smt Gmbh Device and method for the optical measurement of an optical system by using an immersion fluid
US8836929B2 (en) 2002-12-20 2014-09-16 Carl Zeiss Smt Gmbh Device and method for the optical measurement of an optical system by using an immersion fluid
WO2004068242A1 (en) * 2003-01-31 2004-08-12 Tokyo Ohka Kogyo Co., Ltd. Resist composition
US7541138B2 (en) 2003-01-31 2009-06-02 Tokyo Ohka Kogyo Co., Ltd. Resist composition
US7527909B2 (en) 2003-01-31 2009-05-05 Tokyo Ohka Kogyo Co., Ltd. Resist composition
US8198004B2 (en) 2003-01-31 2012-06-12 Tokyo Ohka Kogyo Co., Ltd. Resist composition
KR100743416B1 (en) 2003-01-31 2007-07-30 도오꾜오까고오교 가부시끼가이샤 Resist composition
US7501220B2 (en) 2003-01-31 2009-03-10 Tokyo Ohka Kogyo Co., Ltd. Resist composition
EP2560192A2 (en) 2003-02-17 2013-02-20 Nikon Corporation Stage device, exposure apparatus, and method of manufacturing devices
WO2004073053A1 (en) 2003-02-17 2004-08-26 Nikon Corporation Stage device, exposure device, and device manufacturing method
EP3038138A1 (en) 2003-02-17 2016-06-29 Nikon Corporation Exposure apparatus, and method of manufacturing devices
US7371510B2 (en) 2003-02-20 2008-05-13 Tokyo Ohka Kogyo Co., Ltd. Material for forming resist protecting film for use in liquid immersion lithography process, composite film, and method for forming resist pattern
WO2004074937A1 (en) * 2003-02-20 2004-09-02 Tokyo Ohka Kogyo Co., Ltd. Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method
WO2004077158A1 (en) * 2003-02-25 2004-09-10 Tokyo Ohka Kogyo Co., Ltd. Photoresist composition and method of forming resist pattern
KR101169288B1 (en) 2003-02-26 2012-08-02 가부시키가이샤 니콘 Exposure apparatus and method, and method of manufacturing device
US7911583B2 (en) * 2003-02-26 2011-03-22 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
EP2945016A3 (en) * 2003-02-26 2016-03-30 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
KR101875296B1 (en) * 2003-02-26 2018-07-05 가부시키가이샤 니콘 Exposure apparatus and method, and method of producing apparatus
WO2004076535A1 (en) * 2003-02-26 2004-09-10 Tokyo Ohka Kogyo Co., Ltd. Silsesquioxane resin, positive resist composition, layered product including resist, and method of forming resist pattern
JP2011023765A (en) * 2003-02-26 2011-02-03 Nikon Corp Exposure apparatus, exposure method, and method of producing device
US8102504B2 (en) 2003-02-26 2012-01-24 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
EP1598855A1 (en) * 2003-02-26 2005-11-23 Nikon Corporation Exposure apparatus and method, and method of producing apparatus
EP2945184A3 (en) * 2003-02-26 2016-03-23 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7907254B2 (en) * 2003-02-26 2011-03-15 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
EP2466623A2 (en) 2003-02-26 2012-06-20 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP2009147386A (en) * 2003-02-26 2009-07-02 Nikon Corp Exposure apparatus and method of producing device
JP2004259966A (en) * 2003-02-26 2004-09-16 Nikon Corp Aligner and device manufacturing method
JP2009302596A (en) * 2003-02-26 2009-12-24 Nikon Corp Exposure apparatus, exposure method, and method for manufacturing device
JP2015121825A (en) * 2003-02-26 2015-07-02 株式会社ニコン Exposure equipment, exposure method, and device manufacturing method
US20140253889A1 (en) * 2003-02-26 2014-09-11 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
KR101506408B1 (en) 2003-02-26 2015-03-26 가부시키가이샤 니콘 Exposure apparatus and method, and method of producing apparatus
WO2004086468A1 (en) * 2003-02-26 2004-10-07 Nikon Corporation Exposure apparatus and method, and method of producing apparatus
EP2945016A2 (en) 2003-02-26 2015-11-18 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP2012129565A (en) * 2003-02-26 2012-07-05 Nikon Corp Exposure equipment, exposure method, and device manufacturing method
EP3301511A1 (en) 2003-02-26 2018-04-04 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20140240684A1 (en) * 2003-02-26 2014-08-28 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
EP2945184A2 (en) 2003-02-26 2015-11-18 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8736809B2 (en) 2003-02-26 2014-05-27 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US9182684B2 (en) * 2003-02-26 2015-11-10 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
KR101563453B1 (en) 2003-02-26 2015-10-26 가부시키가이샤 니콘 Exposure apparatus and method, and method of producing apparatus
US7907253B2 (en) 2003-02-26 2011-03-15 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
KR101562447B1 (en) * 2003-02-26 2015-10-21 가부시키가이샤 니콘 Exposure apparatus and method, and method of producing apparatus
US9766555B2 (en) 2003-02-26 2017-09-19 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP2010028127A (en) * 2003-02-26 2010-02-04 Nikon Corp Exposure apparatus, exposure method and device manufacturing method
EP2466624A2 (en) 2003-02-26 2012-06-20 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
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US7453550B2 (en) 2003-02-26 2008-11-18 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP4675776B2 (en) * 2003-02-26 2011-04-27 東京応化工業株式会社 The positive resist composition, a resist laminate and a method of forming a resist pattern
JP2017068287A (en) * 2003-02-26 2017-04-06 株式会社ニコン Exposure apparatus, exposure method, and method for producing device
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KR101442361B1 (en) * 2003-02-26 2014-09-23 가부시키가이샤 니콘 Exposure apparatus and method, and method of producing apparatus
JP2014112716A (en) * 2003-02-26 2014-06-19 Nikon Corp Exposure equipment, exposure method, and device manufacturing method
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EP2466622A3 (en) * 2003-02-26 2012-11-28 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7542128B2 (en) 2003-02-26 2009-06-02 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
EP2466624A3 (en) * 2003-02-26 2012-11-28 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
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EP2466622A2 (en) 2003-02-26 2012-06-20 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP4640516B2 (en) * 2003-02-26 2011-03-02 株式会社ニコン Exposure apparatus, and device manufacturing method
EP2466621A2 (en) 2003-02-26 2012-06-20 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7932991B2 (en) * 2003-02-26 2011-04-26 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP4604452B2 (en) * 2003-02-26 2011-01-05 株式会社ニコン Exposure apparatus, exposure method, and device manufacturing method
KR100722044B1 (en) * 2003-03-04 2007-05-25 도쿄 오카 고교 가부시키가이샤 Immersion liquid for immersion exposure process and resist pattern forming method using such immersion liquid
WO2004079453A1 (en) * 2003-03-04 2004-09-16 Tokyo Ohka Kogyo Co., Ltd. Resist material for liquid immersion exposure process and method of forming resist pattern with the resist material
WO2004079800A1 (en) * 2003-03-04 2004-09-16 Tokyo Ohka Kogyo Co. Ltd. Immersion liquid for immersion exposure process and resist pattern forming method using such immersion liquid
CN100440431C (en) 2003-03-04 2008-12-03 东京応化工业株式会社 Immersion liquid for immersion exposure process and resist pattern forming method using such immersion liquid
US7423955B2 (en) 2003-03-24 2008-09-09 Koninklijke Philips Electronics N.V. Method for recording a lead-out on an optical disc
US7916272B2 (en) 2003-03-25 2011-03-29 Nikon Corporation Exposure apparatus and device fabrication method
JP2012080148A (en) * 2003-03-25 2012-04-19 Nikon Corp Exposure apparatus, and device manufacturing method
US8804095B2 (en) 2003-03-25 2014-08-12 Nikon Corporation Exposure apparatus and device fabrication method
US8558987B2 (en) 2003-03-25 2013-10-15 Nikon Corporation Exposure apparatus and device fabrication method
US8018570B2 (en) 2003-03-25 2011-09-13 Nikon Corporation Exposure apparatus and device fabrication method
JP2011044736A (en) * 2003-03-25 2011-03-03 Nikon Corp Exposure apparatus, and device manufacturing method
KR101181688B1 (en) * 2003-03-25 2012-09-19 가부시키가이샤 니콘 Exposure system and device production method
JP2009158977A (en) * 2003-03-25 2009-07-16 Nikon Corp Exposure apparatus and device fabrication method
JP2014030061A (en) * 2003-03-25 2014-02-13 Nikon Corp Exposure apparatus, and device manufacturing method
WO2004086470A1 (en) * 2003-03-25 2004-10-07 Nikon Corporation Exposure system and device production method
EP1610361A1 (en) * 2003-03-25 2005-12-28 Nikon Corporation Exposure system and device production method
KR101345474B1 (en) 2003-03-25 2013-12-27 가부시키가이샤 니콘 An exposure apparatus and a device manufacturing method
EP1610361A4 (en) * 2003-03-25 2007-10-03 Nikon Corp Exposure system and device production method
US7264918B2 (en) 2003-03-28 2007-09-04 Tokyo Ohka Kogyo Co., Ltd. Resist composition for liquid immersion exposure process and method of forming resist pattern therewith
KR100751737B1 (en) 2003-03-28 2007-08-24 도오꾜오까고오교 가부시끼가이샤 Resist composition for liquid immersion exposure process and method of forming resist pattern therewith
WO2004088429A1 (en) * 2003-03-28 2004-10-14 Tokyo Ohka Kogyo Co. Ltd. Resist composition for liquid immersion exposure process and method of forming resist pattern therewith
US7480029B2 (en) * 2003-04-07 2009-01-20 Nikon Corporation Exposure apparatus and method for manufacturing device
US8111375B2 (en) 2003-04-07 2012-02-07 Nikon Corporation Exposure apparatus and method for manufacturing device
WO2004090956A1 (en) * 2003-04-07 2004-10-21 Nikon Corporation Exposure apparatus and method for manufacturing device
JP2010183109A (en) * 2003-04-07 2010-08-19 Nikon Corp Exposure apparatus, exposure method and method for manufacturing device
JP4902201B2 (en) * 2003-04-07 2012-03-21 株式会社ニコン Exposure apparatus, exposure method and device manufacturing method
US8537331B2 (en) 2003-04-07 2013-09-17 Nikon Corporation Exposure apparatus and method for manufacturing device
US9618852B2 (en) 2003-04-09 2017-04-11 Nikon Corporation Immersion lithography fluid control system regulating flow velocity of gas based on position of gas outlets
US9885959B2 (en) 2003-04-09 2018-02-06 Nikon Corporation Illumination optical apparatus having deflecting member, lens, polarization member to set polarization in circumference direction, and optical integrator
WO2004093159A3 (en) * 2003-04-09 2005-03-17 Derek Coon Immersion lithography fluid control system
US7339650B2 (en) 2003-04-09 2008-03-04 Nikon Corporation Immersion lithography fluid control system that applies force to confine the immersion liquid
EP2270597A1 (en) 2003-04-09 2011-01-05 Nikon Corporation Exposure method and apparatus and device manufacturing method
US9146474B2 (en) 2003-04-09 2015-09-29 Nikon Corporation Exposure method and apparatus, and method for fabricating device with light amount distribution having light larger and different linear polarization states in an on-axis area and a plurality of off-axis areas
JP2010161383A (en) * 2003-04-09 2010-07-22 Nikon Corp Immersion lithography fluid control system
EP3229077A1 (en) 2003-04-09 2017-10-11 Nikon Corporation Exposure method and apparatus, and method for fabricating device
US9678437B2 (en) 2003-04-09 2017-06-13 Nikon Corporation Illumination optical apparatus having distribution changing member to change light amount and polarization member to set polarization in circumference direction
KR101177331B1 (en) * 2003-04-09 2012-08-30 가부시키가이샤 니콘 Immersion lithography fluid control system
US8675177B2 (en) 2003-04-09 2014-03-18 Nikon Corporation Exposure method and apparatus, and method for fabricating device with light amount distribution having light larger in first and second pairs of areas
JP2014013939A (en) * 2003-04-09 2014-01-23 Nikon Corp Immersion lithography fluid control system
EP3226073A2 (en) 2003-04-09 2017-10-04 Nikon Corporation Exposure method and apparatus, and method for fabricating device
US9164393B2 (en) 2003-04-09 2015-10-20 Nikon Corporation Exposure method and apparatus, and method for fabricating device with light amount distribution having light larger in four areas
WO2004093159A2 (en) * 2003-04-09 2004-10-28 Nikon Corporation Immersion lithography fluid control system
JP4650413B2 (en) * 2003-04-10 2011-03-16 株式会社ニコン Environmental system including a transfer region for immersion Risogufurafi device
JP2007528115A (en) * 2003-04-10 2007-10-04 株式会社ニコン Environmental system including a vacuum exhaust for an immersion lithographic apparatus
JP4656057B2 (en) * 2003-04-10 2011-03-23 株式会社ニコン Immersion lithography apparatus for the electro-osmotic element
CN105700301A (en) * 2003-04-10 2016-06-22 株式会社尼康 Environmental system including vacuum scavenge for an immersion lithography apparatus
EP3232271A1 (en) * 2003-04-10 2017-10-18 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
US9007561B2 (en) 2003-04-10 2015-04-14 Nikon Corporation Immersion lithography apparatus with hydrophilic region encircling hydrophobic region which encircles substrate support
US8456610B2 (en) 2003-04-10 2013-06-04 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
JP2006523022A (en) * 2003-04-10 2006-10-05 株式会社ニコン Immersion lithography apparatus for the electro-osmotic element
KR101469405B1 (en) * 2003-04-10 2014-12-10 가부시키가이샤 니콘 Environmental system including vaccum scavange for an immersion lithography apparatus
KR101724117B1 (en) 2003-04-10 2017-04-06 가부시키가이샤 니콘 Environmental system including vaccum scavange for an immersion lithography apparatus
JP2006523028A (en) * 2003-04-10 2006-10-05 株式会社ニコン Environmental system including a transfer region for immersion Risogufurafi device
US8836914B2 (en) 2003-04-10 2014-09-16 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
KR101177330B1 (en) 2003-04-10 2012-08-30 가부시키가이샤 니콘 An immersion lithography apparatus
KR101238142B1 (en) * 2003-04-10 2013-02-28 가부시키가이샤 니콘 Environmental system including a transport region for an immersion lithography apparatus
EP1611486A4 (en) * 2003-04-10 2008-10-22 Nikon Corp Environmental system including a transport region for an immersion lithography apparatus
EP1611485A4 (en) * 2003-04-10 2008-10-29 Nikon Corp Environmental system including vaccum scavange for an immersion lithography apparatus
JP2012129563A (en) * 2003-04-10 2012-07-05 Nikon Corp Environmental system including vacuum scavenge for an immersion lithography apparatus
US8810768B2 (en) 2003-04-10 2014-08-19 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
JP2012129564A (en) * 2003-04-10 2012-07-05 Nikon Corp Environmental system including transport region for an immersion lithography apparatus
WO2004090633A3 (en) * 2003-04-10 2005-05-12 John K Eaton An electro-osmotic element for an immersion lithography apparatus
US9632427B2 (en) 2003-04-10 2017-04-25 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
JP2017037350A (en) * 2003-04-10 2017-02-16 株式会社ニコン Environmental system including transport region for immersion lithography apparatus
JP2016021079A (en) * 2003-04-10 2016-02-04 株式会社ニコン Environmental system including decompression discharge for immersion lithography device
JP2011166166A (en) * 2003-04-10 2011-08-25 Nikon Corp Environmental system including vacuum scavenge for an immersion lithography apparatus
EP3062152A1 (en) * 2003-04-10 2016-08-31 Nikon Corporation Environmental system including vaccum scavenge for an immersion lithography apparatus
KR20150092341A (en) * 2003-04-10 2015-08-12 가부시키가이샤 니콘 Environmental system including vaccum scavange for an immersion lithography apparatus
CN101061429B (en) * 2003-04-10 2015-02-04 株式会社尼康 Environmental system including vacuum scavenge for an immersion lithography apparatus
JP2017016159A (en) * 2003-04-10 2017-01-19 株式会社ニコン Environmental system including decompression discharge for immersion lithography device
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EP1611485A2 (en) * 2003-04-10 2006-01-04 Nikon Corporation Environmental system including vaccum scavange for an immersion lithography apparatus
KR101431938B1 (en) * 2003-04-10 2014-08-19 가부시키가이샤 니콘 Environmental system including a transport region for an immersion lithography apparatus
JP2015029153A (en) * 2003-04-10 2015-02-12 株式会社ニコン Environmental system including vacuum scavenge for an immersion lithography apparatus
EP2667252A1 (en) * 2003-04-10 2013-11-27 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
US7345742B2 (en) 2003-04-10 2008-03-18 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
KR101319152B1 (en) 2003-04-10 2013-10-17 가부시키가이샤 니콘 Environmental system including vaccum scavange for an immersion lithography apparatus
WO2004092833A2 (en) 2003-04-10 2004-10-28 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
JP2011187976A (en) * 2003-04-10 2011-09-22 Nikon Corp Environmental system including transport region for immersion lithography apparatus
US9658537B2 (en) 2003-04-10 2017-05-23 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
US9910370B2 (en) 2003-04-10 2018-03-06 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
WO2004090633A2 (en) * 2003-04-10 2004-10-21 Nikon Corporation An electro-osmotic element for an immersion lithography apparatus
JP2018041111A (en) * 2003-04-10 2018-03-15 株式会社ニコン Liquid immersion exposure device
KR101323993B1 (en) 2003-04-10 2013-10-30 가부시키가이샤 니콘 Environmental system including a transport region for an immersion lithography apparatus
KR101121655B1 (en) 2003-04-10 2012-03-09 가부시키가이샤 니콘 Environmental system including vaccum scavange for an immersion lithography apparatus
US9244362B2 (en) 2003-04-10 2016-01-26 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
EP2667253A1 (en) * 2003-04-10 2013-11-27 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
KR101506431B1 (en) 2003-04-10 2015-03-26 가부시키가이샤 니콘 Environmental system including vaccum scavange for an immersion lithography apparatus
JP2010183085A (en) * 2003-04-10 2010-08-19 Nikon Corp Environmental system including vacuum scavenge for immersion lithography apparatus
US9977350B2 (en) 2003-04-10 2018-05-22 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
US9244363B2 (en) 2003-04-10 2016-01-26 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
US8089610B2 (en) * 2003-04-10 2012-01-03 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
EP1611486A2 (en) * 2003-04-10 2006-01-04 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
KR101886027B1 (en) 2003-04-10 2018-09-06 가부시키가이샤 니콘 Environmental system including vaccum scavange for an immersion lithography apparatus
JP2014060457A (en) * 2003-04-10 2014-04-03 Nikon Corp Environmental system including evacuation for liquid immersion lithographic apparatus
JP4775256B2 (en) * 2003-04-10 2011-09-21 株式会社ニコン Environmental system including a vacuum exhaust for an immersion lithographic apparatus
US7397532B2 (en) 2003-04-10 2008-07-08 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
EP2613193A3 (en) * 2003-04-11 2014-06-11 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
JP2015092628A (en) * 2003-04-11 2015-05-14 株式会社ニコン Liquid immersion lithography device and device manufacturing method
KR20140048312A (en) * 2003-04-11 2014-04-23 가부시키가이샤 니콘 Cleanup method for optics in immersion lithography
EP3141953A3 (en) * 2003-04-11 2017-06-07 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
KR101612681B1 (en) 2003-04-11 2016-04-15 가부시키가이샤 니콘 Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US8035795B2 (en) 2003-04-11 2011-10-11 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the protection lens during wafer exchange in an immersion lithography machine
JP2016053721A (en) * 2003-04-11 2016-04-14 株式会社ニコン Method for cleaning optical element in immersion lithography
US9946163B2 (en) 2003-04-11 2018-04-17 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US8059258B2 (en) 2003-04-11 2011-11-15 Nikon Corporation Liquid jet and recovery system for immersion lithography
US9958786B2 (en) 2003-04-11 2018-05-01 Nikon Corporation Cleanup method for optics in immersion lithography using object on wafer holder in place of wafer
KR101577555B1 (en) 2003-04-11 2015-12-14 가부시키가이샤 니콘 Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US9329493B2 (en) 2003-04-11 2016-05-03 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
KR101753496B1 (en) * 2003-04-11 2017-07-03 가부시키가이샤 니콘 An immersion lithography apparatus and a cleaning method used in an immersion lithography apparatus
US8351019B2 (en) 2003-04-11 2013-01-08 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US9500960B2 (en) 2003-04-11 2016-11-22 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
KR101225884B1 (en) * 2003-04-11 2013-01-28 가부시키가이샤 니콘 Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
KR101525335B1 (en) * 2003-04-11 2015-06-03 가부시키가이샤 니콘 Cleanup method for optics in immersion lithography
US7443482B2 (en) 2003-04-11 2008-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
WO2004092830A2 (en) * 2003-04-11 2004-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
US8514367B2 (en) 2003-04-11 2013-08-20 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
KR101508810B1 (en) * 2003-04-11 2015-04-14 가부시키가이샤 니콘 Cleanup method for optics in immersion lithography
EP2613195A3 (en) * 2003-04-11 2014-06-11 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
JP2014225703A (en) * 2003-04-11 2014-12-04 株式会社ニコン Cleanup method for optical element in immersion lithography
JP2014222762A (en) * 2003-04-11 2014-11-27 株式会社ニコン Liquid immersion lithography device and device manufacturing method
JP2012169641A (en) * 2003-04-11 2012-09-06 Nikon Corp Immersion lithography system and method for manufacturing device
EP2161619B1 (en) * 2003-04-11 2013-05-22 Nikon Corporation Cleanup method and immersion lithography apparatus
US8879047B2 (en) 2003-04-11 2014-11-04 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens using a pad member or second stage during wafer exchange in an immersion lithography machine
US9785057B2 (en) 2003-04-11 2017-10-10 Nikon Corporation Liquid jet and recovery system for immersion lithography
EP2613192A3 (en) * 2003-04-11 2014-06-11 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US8488100B2 (en) 2003-04-11 2013-07-16 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US8848166B2 (en) 2003-04-11 2014-09-30 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US8848168B2 (en) 2003-04-11 2014-09-30 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US7932989B2 (en) 2003-04-11 2011-04-26 Nikon Corporation Liquid jet and recovery system for immersion lithography
EP2887143A1 (en) * 2003-04-11 2015-06-24 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
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JP2016114957A (en) * 2003-04-11 2016-06-23 株式会社ニコン Immersion lithography machine and device manufacturing method
EP2613194A3 (en) * 2003-04-11 2014-06-11 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US9304409B2 (en) 2003-04-11 2016-04-05 Nikon Corporation Liquid jet and recovery system for immersion lithography
US9081298B2 (en) 2003-04-11 2015-07-14 Nikon Corporation Apparatus for maintaining immersion fluid in the gap under the projection lens during wafer exchange using a co-planar member in an immersion lithography machine
JP2018025818A (en) * 2003-04-11 2018-02-15 株式会社ニコン Method for cleaning optical system in immersion lithography
JP2012138624A (en) * 2003-04-11 2012-07-19 Nikon Corp Cleanup method for optical element in immersion lithography
EP2161620A1 (en) 2003-04-11 2010-03-10 Nikon Corporation Cleanup method for optics in immersion lithography
US8269944B2 (en) 2003-04-11 2012-09-18 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
EP2161619A1 (en) 2003-04-11 2010-03-10 Nikon Corporation Cleanup method for optics in immersion lithography
KR101289959B1 (en) * 2003-04-11 2013-07-26 가부시키가이샤 니콘 Cleanup method for optics in immersion lithography
EP2161621A1 (en) 2003-04-11 2010-03-10 Nikon Corporation Cleanup method for optics in immersion lithography
WO2004092830A3 (en) * 2003-04-11 2005-06-16 Nippon Kogaku Kk Liquid jet and recovery system for immersion lithography
JP2017037333A (en) * 2003-04-11 2017-02-16 株式会社ニコン The method of cleaning an optical element in the immersion lithography
KR101597475B1 (en) 2003-04-11 2016-02-24 가부시키가이샤 니콘 Cleanup method for optics in immersion lithography
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JP2013191884A (en) * 2003-04-11 2013-09-26 Nikon Corp Immersion lithographic apparatus and device manufacturing method
JP2015172787A (en) * 2003-04-11 2015-10-01 株式会社ニコン Liquid immersion lithography device and device manufacturing method
US8634057B2 (en) 2003-04-11 2014-01-21 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
JP2011166173A (en) * 2003-04-11 2011-08-25 Nikon Corp Immersion lithography machine, and method of manufacturing device
KR101318542B1 (en) * 2003-04-11 2013-10-16 가부시키가이샤 니콘 Cleanup method for optics in immersion lithography
EP2618213A3 (en) * 2003-04-11 2014-06-11 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
KR101324818B1 (en) * 2003-04-11 2013-11-01 가부시키가이샤 니콘 Cleanup method for optics in immersion lithography
JP2013251573A (en) * 2003-04-11 2013-12-12 Nikon Corp Cleanup method for optical element in immersion lithography
US8610875B2 (en) 2003-04-11 2013-12-17 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
JP2010093298A (en) * 2003-04-11 2010-04-22 Nikon Corp Method of cleaning optical element in immersion lithography
JP2011171758A (en) * 2003-04-11 2011-09-01 Nikon Corp Method of cleaning optical element in immersion lithography
EP2172809A1 (en) 2003-04-11 2010-04-07 Nikon Corporation Cleanup method for optics in immersion lithography
EP2166413A1 (en) 2003-04-11 2010-03-24 Nikon Corporation Cleanup method for optics in immersion lithography
US8953250B2 (en) 2003-04-17 2015-02-10 Nikon Corporation Optical arrangement of autofocus elements for use with immersion lithography
KR101369582B1 (en) * 2003-04-17 2014-03-04 가부시키가이샤 니콘 Optical arrangement of autofocus elements for use with immersion lithography
US9086636B2 (en) 2003-04-17 2015-07-21 Nikon Corporation Optical arrangement of autofocus elements for use with immersion lithography
KR101100125B1 (en) * 2003-05-01 2011-12-29 가부시키가이샤 니콘 Projection optical system, exposure apparatus, and exposure method
WO2004097911A1 (en) * 2003-05-01 2004-11-11 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US7471374B2 (en) 2003-05-01 2008-12-30 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US9933705B2 (en) 2003-05-06 2018-04-03 Nikon Corporation Reduction projection optical system, exposure apparatus, and exposure method
US9846366B2 (en) 2003-05-06 2017-12-19 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US9081295B2 (en) 2003-05-06 2015-07-14 Nikon Corporation Catadioptric projection optical system, exposure apparatus, and exposure method
US9606443B2 (en) 2003-05-06 2017-03-28 Nikon Corporation Reducing immersion projection optical system
US9500943B2 (en) 2003-05-06 2016-11-22 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US9086635B2 (en) 2003-05-06 2015-07-21 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
EP1477856A1 (en) * 2003-05-13 2004-11-17 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2010157766A (en) * 2003-05-13 2010-07-15 Asml Netherlands Bv Lithographic apparatus
EP2282233A1 (en) * 2003-05-13 2011-02-09 ASML Netherlands BV Lithographic apparatus
JP2008160155A (en) * 2003-05-13 2008-07-10 Asml Netherlands Bv Lithographic apparatus and method of manufacturing device
EP2270599A1 (en) 2003-05-13 2011-01-05 ASML Netherlands BV Lithographic apparatus
US7352434B2 (en) * 2003-05-13 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8964164B2 (en) 2003-05-13 2015-02-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9798246B2 (en) 2003-05-13 2017-10-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2012134561A (en) * 2003-05-13 2012-07-12 Asml Netherlands Bv Lithographic apparatus and method of manufacturing device
WO2004102646A1 (en) * 2003-05-15 2004-11-25 Nikon Corporation Exposure apparatus and method for manufacturing device
JP4552853B2 (en) * 2003-05-15 2010-09-29 株式会社ニコン Exposure apparatus and device manufacturing method
JP2014075609A (en) * 2003-05-23 2014-04-24 Nikon Corp Exposure apparatus and device manufacturing method
EP1628329A1 (en) * 2003-05-23 2006-02-22 Nikon Corporation Exposure device and device manufacturing method
US9977336B2 (en) 2003-05-23 2018-05-22 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US9939739B2 (en) 2003-05-23 2018-04-10 Nikon Corporation Exposure apparatus and method for producing device
KR101864557B1 (en) 2003-05-23 2018-06-04 가부시키가이샤 니콘 Exposure method, exposure device, and device manufacturing method
JP2015222451A (en) * 2003-05-23 2015-12-10 株式会社ニコン Exposure equipment and device manufacturing method
US20180173107A1 (en) * 2003-05-23 2018-06-21 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
KR101677829B1 (en) * 2003-05-23 2016-11-18 가부시키가이샤 니콘 Exposure device and device manufacturing method
KR101376017B1 (en) * 2003-05-23 2014-03-19 가부시키가이샤 니콘 Exposure method, exposure device, and device manufacturing method
JP2014078728A (en) * 2003-05-23 2014-05-01 Nikon Corp Exposure device, exposure method, and device manufacturing method
US8072576B2 (en) * 2003-05-23 2011-12-06 Nikon Corporation Exposure apparatus and method for producing device
US9933708B2 (en) 2003-05-23 2018-04-03 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
EP3279740A1 (en) 2003-05-23 2018-02-07 Nikon Corporation Liquid immersion exposure method and apparatus, and methods for producing a device
EP1628329A4 (en) * 2003-05-23 2009-09-16 Nikon Corp Exposure device and device manufacturing method
KR101102286B1 (en) 2003-05-23 2012-01-03 가부시키가이샤 니콘 Exposure method, exposure device, and device manufacturing method
KR101345540B1 (en) 2003-05-23 2013-12-26 가부시키가이샤 니콘 An exposure apparatus and a device manufacturing method
JP2015163996A (en) * 2003-05-23 2015-09-10 株式会社ニコン Exposure device, exposure method, and device manufacturing method
KR20160009710A (en) * 2003-05-23 2016-01-26 가부시키가이샤 니콘 Exposure method, exposure device, and device manufacturing method
JP2005277363A (en) * 2003-05-23 2005-10-06 Nikon Corp Exposure device and device manufacturing method
KR101411799B1 (en) 2003-05-23 2014-06-24 가부시키가이샤 니콘 Exposure method, exposure device, and device manufacturing method
US8130363B2 (en) * 2003-05-23 2012-03-06 Nikon Corporation Exposure apparatus and method for producing device
KR101327697B1 (en) 2003-05-23 2013-11-11 가부시키가이샤 니콘 Exposure device and device manufacturing method
JP2010109391A (en) * 2003-05-23 2010-05-13 Nikon Corp Exposure device and device manufacturing method
KR101544655B1 (en) 2003-05-23 2015-08-17 가부시키가이샤 니콘 Exposure method, exposure device, and device manufacturing method
US8134682B2 (en) * 2003-05-23 2012-03-13 Nikon Corporation Exposure apparatus and method for producing device
US8760617B2 (en) * 2003-05-23 2014-06-24 Nikon Corporation Exposure apparatus and method for producing device
KR101311564B1 (en) 2003-05-23 2013-09-26 가부시키가이샤 니콘 Exposure method, exposure device, and device manufacturing method
US8169592B2 (en) * 2003-05-23 2012-05-01 Nikon Corporation Exposure apparatus and method for producing device
JP2011159995A (en) * 2003-05-23 2011-08-18 Nikon Corp Exposure device and device manufacturing method
JP2011139107A (en) * 2003-05-23 2011-07-14 Nikon Corp Exposure apparatus and device manufacturing method
JP2011139106A (en) * 2003-05-23 2011-07-14 Nikon Corp Exposure apparatus and device manufacturing method
EP2466616A2 (en) 2003-05-23 2012-06-20 Nikon Corporation Exposure apparatus and method for producing device
US20160246181A1 (en) * 2003-05-23 2016-08-25 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
JP2017037345A (en) * 2003-05-23 2017-02-16 株式会社ニコン Exposure apparatus, exposure method, and method for manufacturing device
EP2466620A2 (en) 2003-05-23 2012-06-20 Nikon Corporation Exposure apparatus and method for producing device
EP2466618A2 (en) 2003-05-23 2012-06-20 Nikon Corporation Exposure apparatus and method for producing device
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JP2011139105A (en) * 2003-05-23 2011-07-14 Nikon Corp Exposure apparatus and device manufacturing method
US9285684B2 (en) 2003-05-23 2016-03-15 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US20160216612A1 (en) * 2003-05-23 2016-07-28 Nikon Corporation Exposure apparatus and method for producing device
EP3048487A1 (en) * 2003-05-23 2016-07-27 Nikon Corporation Immersion exposure method and apparatus, and method for producing a device
EP2466615A2 (en) 2003-05-23 2012-06-20 Nikon Corporation Exposure apparatus and method for producing device
EP2466619A2 (en) 2003-05-23 2012-06-20 Nikon Corporation Exposure apparatus and method for producing device
US9354525B2 (en) 2003-05-23 2016-05-31 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
JP2012129562A (en) * 2003-05-23 2012-07-05 Nikon Corp Exposure equipment and device manufacturing method
JP2013153214A (en) * 2003-05-23 2013-08-08 Nikon Corp Exposure device, exposure method, and device manufacturing method
KR101711352B1 (en) 2003-05-23 2017-02-28 가부시키가이샤 니콘 Exposure method, exposure device, and device manufacturing method
JP4720106B2 (en) * 2003-05-23 2011-07-13 株式会社ニコン Exposure methods, and device manufacturing method
KR101796849B1 (en) * 2003-05-23 2017-11-10 가부시키가이샤 니콘 Exposure device and device manufacturing method
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WO2004107417A1 (en) * 2003-05-28 2004-12-09 Nikon Corporation Exposure method, exposure device, and device manufacturing method
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JP2012129558A (en) * 2003-05-28 2012-07-05 Nikon Corp Exposure method, exposure equipment, and device manufacturing method
US7804574B2 (en) 2003-05-30 2010-09-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method using acidic liquid
US7808611B2 (en) 2003-05-30 2010-10-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method using acidic liquid
JP2012054601A (en) * 2003-06-09 2012-03-15 Asml Netherlands Bv Lithographic projection apparatus
JP4558762B2 (en) * 2003-06-09 2010-10-06 エーエスエムエル ネザーランズ ビー.ブイ. Lithographic apparatus and device manufacturing method
KR100683263B1 (en) * 2003-06-09 2007-02-15 에이에스엠엘 네델란즈 비.브이. Lithographic Apparatus and Device Manufacturing Method
EP1486828A2 (en) 2003-06-09 2004-12-15 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US9152058B2 (en) 2003-06-09 2015-10-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a member and a fluid opening
JP2012114485A (en) * 2003-06-09 2012-06-14 Asml Netherlands Bv Lithographic device and device manufacturing method
JP2012054602A (en) * 2003-06-09 2012-03-15 Asml Netherlands Bv Exposure device
US9081299B2 (en) 2003-06-09 2015-07-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving removal of liquid entering a gap
JP2007235179A (en) * 2003-06-09 2007-09-13 Asml Netherlands Bv Lithography apparatus and device manufacturing method
JP2012114484A (en) * 2003-06-09 2012-06-14 Asml Netherlands Bv Lithographic device and device manufacturing method
JP2010161421A (en) * 2003-06-09 2010-07-22 Asml Netherlands Bv Lithography apparatus and method for manufacturing device
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9110389B2 (en) * 2003-06-11 2015-08-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2010239158A (en) * 2003-06-11 2010-10-21 Asml Netherlands Bv Lithographic projection apparatus
EP1489461A1 (en) * 2003-06-11 2004-12-22 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2261741A2 (en) 2003-06-11 2010-12-15 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US20120013872A1 (en) * 2003-06-11 2012-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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EP2261742A2 (en) 2003-06-11 2010-12-15 ASML Netherlands BV Lithographic apparatus and device manufacturing method.
EP1486827A2 (en) * 2003-06-11 2004-12-15 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2012129566A (en) * 2003-06-13 2012-07-05 Nikon Corp Exposure method, substrate stage, exposure device, and device manufacturing method
US9019467B2 (en) 2003-06-13 2015-04-28 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
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JP2017187786A (en) * 2003-06-13 2017-10-12 株式会社ニコン The substrate stage
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US9846371B2 (en) 2003-06-13 2017-12-19 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
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EP2738792A2 (en) 2003-06-13 2014-06-04 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
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JP2009117877A (en) * 2003-06-19 2009-05-28 Nikon Corp Exposure device and device production method
JP2008022042A (en) * 2003-06-19 2008-01-31 Asml Holding Nv Method of using immersion photolithography system and microchannel nozzle
JP4705943B2 (en) * 2003-06-19 2011-06-22 エーエスエムエル ホールディング エヌ.ブイ. Liquid immersion photolithography system and system
US9274437B2 (en) 2003-06-19 2016-03-01 Nikon Corporation Exposure apparatus and device manufacturing method
KR101686762B1 (en) 2003-06-19 2016-12-28 가부시키가이샤 니콘 Exposure device and device producing method
US8724085B2 (en) * 2003-06-19 2014-05-13 Nikon Corporation Exposure apparatus, and device manufacturing method
JP2015079996A (en) * 2003-06-19 2015-04-23 株式会社ニコン Exposure equipment, exposure method and method for manufacturing device
EP2275869A2 (en) 2003-06-19 2011-01-19 Nikon Corporation Exposure apparatus and device manufacturing method
US8692976B2 (en) 2003-06-19 2014-04-08 Nikon Corporation Exposure apparatus, and device manufacturing method
JP2013168666A (en) * 2003-06-19 2013-08-29 Nikon Corp Exposure equipment, exposure method and method for manufacturing device
JP2015172784A (en) * 2003-06-19 2015-10-01 株式会社ニコン Exposure equipment, exposure method and method for manufacturing device
US9715178B2 (en) 2003-06-19 2017-07-25 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP2014158038A (en) * 2003-06-19 2014-08-28 Nikon Corp Exposure equipment, exposure method and method for manufacturing device
KR101419663B1 (en) 2003-06-19 2014-07-15 가부시키가이샤 니콘 Exposure device and device producing method
EP1489462B1 (en) * 2003-06-19 2010-05-19 ASML Holding N.V. Immersion photolithography system comprising microchannel nozzles
WO2004114380A1 (en) * 2003-06-19 2004-12-29 Nikon Corporation Exposure device and device producing method
JP2010118687A (en) * 2003-06-19 2010-05-27 Nikon Corp Exposure device and method of manufacturing the device
US8004649B2 (en) 2003-06-19 2011-08-23 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP2016042187A (en) * 2003-06-19 2016-03-31 株式会社ニコン Exposure apparatus, exposure method, and method for manufacturing device
JP2017033018A (en) * 2003-06-19 2017-02-09 株式会社ニコン Exposure device, exposure method and device production method
US8436978B2 (en) * 2003-06-19 2013-05-07 Nikon Corporation Exposure apparatus, and device manufacturing method
EP2278401A2 (en) 2003-06-19 2011-01-26 Nikon Corporation Exposure apparatus and device manufacturing method
US20130229637A1 (en) * 2003-06-19 2013-09-05 Nikon Corporation Exposure apparatus, and device manufacturing method
JP4505675B2 (en) * 2003-06-19 2010-07-21 株式会社ニコン Exposure apparatus, exposure method, and device manufacturing method
EP1489462A2 (en) 2003-06-19 2004-12-22 ASML Holding N.V. Immersion photolithography system comprising microchannel nozzles
US20110025997A1 (en) * 2003-06-19 2011-02-03 Nikon Corporation Exposure apparatus, and device manufacturing method
JP2011066458A (en) * 2003-06-19 2011-03-31 Asml Holding Nv Immersion photolithography system
US9019473B2 (en) 2003-06-19 2015-04-28 Nikon Corporation Exposure apparatus and device manufacturing method
US8027027B2 (en) * 2003-06-19 2011-09-27 Nikon Corporation Exposure apparatus, and device manufacturing method
JP2017227915A (en) * 2003-06-19 2017-12-28 株式会社ニコン Exposure device, exposure method and device production method
KR101830565B1 (en) 2003-06-19 2018-02-20 가부시키가이샤 니콘 Exposure device and device producing method
US9709899B2 (en) 2003-06-19 2017-07-18 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP2010187009A (en) * 2003-06-19 2010-08-26 Asml Holding Nv Liquid immersion photolithography system
KR20150130563A (en) * 2003-06-19 2015-11-23 가부시키가이샤 니콘 Exposure device and device producing method
KR101289979B1 (en) 2003-06-19 2013-07-26 가부시키가이샤 니콘 Exposure device and device producing method
KR101187617B1 (en) 2003-06-19 2012-10-08 가부시키가이샤 니콘 Exposure device and device producing method
US8018575B2 (en) * 2003-06-19 2011-09-13 Nikon Corporation Exposure apparatus, and device manufacturing method
US9001307B2 (en) 2003-06-19 2015-04-07 Nikon Corporation Exposure apparatus and device manufacturing method
KR101529844B1 (en) * 2003-06-19 2015-06-17 가부시키가이샤 니콘 Exposure device and device producing method
WO2005003864A2 (en) 2003-06-24 2005-01-13 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
WO2005003864A3 (en) * 2003-06-24 2005-04-14 Lam Res Corp Apparatus and method for providing a confined liquid for immersion lithography
US7675000B2 (en) 2003-06-24 2010-03-09 Lam Research Corporation System method and apparatus for dry-in, dry-out, low defect laser dicing using proximity technology
US7116395B2 (en) 2003-06-25 2006-10-03 Canon Kabushiki Kaisha Liquid immersion type exposure apparatus
EP1491956A1 (en) * 2003-06-27 2004-12-29 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7679718B2 (en) 2003-06-27 2010-03-16 Canon Kabushiki Kaisha Immersion exposure technique
US7898643B2 (en) 2003-06-27 2011-03-01 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
US7012673B2 (en) 2003-06-27 2006-03-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7466393B2 (en) 2003-06-27 2008-12-16 Canon Kabushiki Kaisha Immersion exposure technique
US7619714B2 (en) 2003-06-27 2009-11-17 Canon Kabushiki Kaisha Immersion exposure technique
US7372542B2 (en) 2003-06-27 2008-05-13 Canon Kabushiki Kaisha Immersion exposure technique
US7420651B2 (en) 2003-06-27 2008-09-02 Canon Kabushiki Kaisha Immersion exposure technique
JP2010183118A (en) * 2003-06-27 2010-08-19 Asml Holding Nv Immersion photolithography system using inverted wafer-projection optics interface
WO2005001572A2 (en) * 2003-06-27 2005-01-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1494079A1 (en) * 2003-06-27 2005-01-05 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7119874B2 (en) 2003-06-27 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7561248B2 (en) 2003-06-27 2009-07-14 Canon Kabushiki Kaisha Immersion exposure technique
US7349064B2 (en) 2003-06-27 2008-03-25 Canon Kabushiki Kaisha Immersion exposure technique
JP2010183119A (en) * 2003-06-27 2010-08-19 Asml Holding Nv Immersion photolithography system using inverted wafer-projection optics interface
US7450216B2 (en) 2003-06-27 2008-11-11 Canon Kabushiki Kaisha Immersion exposure technique
JP2009514183A (en) * 2003-06-27 2009-04-02 エーエスエムエル ネザーランズ ビー.ブイ. Lithographic apparatus and device manufacturing method
EP1498778A1 (en) * 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005001572A3 (en) * 2003-06-27 2005-04-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1975721A1 (en) 2003-06-30 2008-10-01 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7110087B2 (en) 2003-06-30 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1494075A1 (en) * 2003-06-30 2005-01-05 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
US7038760B2 (en) 2003-06-30 2006-05-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2843472A3 (en) * 2003-07-08 2015-05-27 Nikon Corporation Wafer table for immersion lithography
EP2853943A3 (en) * 2003-07-08 2015-05-27 Nikon Corporation Wafer table for immersion lithography
EP3179309A1 (en) * 2003-07-08 2017-06-14 Nikon Corporation Wafer table for immersion lithography
US7433019B2 (en) 2003-07-09 2008-10-07 Nikon Corporation Exposure apparatus and device manufacturing method
EP2264531A2 (en) 2003-07-09 2010-12-22 Nikon Corporation Exposure apparatus and device manufacturing method
US8228484B2 (en) * 2003-07-09 2012-07-24 Nikon Corporation Coupling apparatus, exposure apparatus, and device fabricating method
WO2005006415A1 (en) 2003-07-09 2005-01-20 Nikon Corporation Exposure apparatus and method for manufacturing device
JP4729876B2 (en) * 2003-07-09 2011-07-20 株式会社ニコン Exposure apparatus, exposure method, and device manufacturing method
JP2011049607A (en) * 2003-07-09 2011-03-10 Nikon Corp Exposure apparatus, exposure method, and method for manufacturing device
WO2005006416A1 (en) 2003-07-09 2005-01-20 Nikon Corporation Linking unit, exposure apparatus and method for manufacturing device
US8218127B2 (en) * 2003-07-09 2012-07-10 Nikon Corporation Exposure apparatus and device manufacturing method
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JP2010219558A (en) * 2003-07-09 2010-09-30 Nikon Corp Coupling apparatus, exposure apparatus, and method for manufacturing device
EP2264532A2 (en) 2003-07-09 2010-12-22 Nikon Corporation Exposure apparatus and device manufacturing method
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WO2005006418A1 (en) * 2003-07-09 2005-01-20 Nikon Corporation Exposure apparatus and method for manufacturing device
US8120751B2 (en) 2003-07-09 2012-02-21 Nikon Corporation Coupling apparatus, exposure apparatus, and device fabricating method
JP2014017533A (en) * 2003-07-09 2014-01-30 Nikon Corp Exposure device and device manufacturing method
WO2005006417A1 (en) 2003-07-09 2005-01-20 Nikon Corporation Exposure apparatus and method for manufacturing device
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US9500959B2 (en) 2003-07-09 2016-11-22 Nikon Corporation Exposure apparatus and device manufacturing method
JP4844123B2 (en) * 2003-07-09 2011-12-28 株式会社ニコン Exposure apparatus, and device manufacturing method
US8879043B2 (en) 2003-07-09 2014-11-04 Nikon Corporation Exposure apparatus and method for manufacturing device
KR101296501B1 (en) 2003-07-09 2013-08-13 가부시키가이샤 니콘 Exposure apparatus and method for manufacturing device
EP2264532A3 (en) * 2003-07-09 2011-05-11 Nikon Corporation Exposure apparatus and device manufacturing method
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JP4835155B2 (en) * 2003-07-09 2011-12-14 株式会社ニコン Exposure apparatus and device manufacturing method
US8913223B2 (en) * 2003-07-16 2014-12-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2015212839A (en) * 2003-07-16 2015-11-26 エーエスエムエル ネザーランズ ビー.ブイ. Lithographic apparatus
US8711323B2 (en) 2003-07-16 2014-04-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2017054130A (en) * 2003-07-16 2017-03-16 エーエスエムエル ネザーランズ ビー.ブイ. Lithographic apparatus
JP2015163997A (en) * 2003-07-16 2015-09-10 エーエスエムエル ネザーランズ ビー.ブイ. Lithographic apparatus
JP2009224806A (en) * 2003-07-16 2009-10-01 Asml Netherlands Bv Lithographic apparatus, and device manufacturing method
JP2014241425A (en) * 2003-07-16 2014-12-25 エーエスエムエル ネザーランズ ビー.ブイ. Lithographic apparatus
JP2010153913A (en) * 2003-07-16 2010-07-08 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7738074B2 (en) 2003-07-16 2010-06-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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