WO1999049504A1 - Projection exposure method and system - Google Patents

Projection exposure method and system Download PDF

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Publication number
WO1999049504A1
WO1999049504A1 PCT/JP1999/001262 JP9901262W WO9949504A1 WO 1999049504 A1 WO1999049504 A1 WO 1999049504A1 JP 9901262 W JP9901262 W JP 9901262W WO 9949504 A1 WO9949504 A1 WO 9949504A1
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Prior art keywords
substrate
liquid
exposure
projection
projection exposure
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PCT/JP1999/001262
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French (fr)
Japanese (ja)
Inventor
Yoshio Fukami
Nobutaka Magome
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Nikon Corporation
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Priority to JP7926398 priority Critical
Priority to JP10/79263 priority
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Publication of WO1999049504A1 publication Critical patent/WO1999049504A1/en

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece
    • G03F7/70241Optical aspects of refractive systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece
    • G03F7/70341Immersion
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/708Construction of apparatus, e.g. environment, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/708Construction of apparatus, e.g. environment, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875Temperature
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/708Construction of apparatus, e.g. environment, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891Temperature

Abstract

A projection exposure method capable of keeping a liquid (7) filled between a projection optical system (PL) and a wafer (W) even while the wafer (W) is being moved when a liquid immersion method is used to conduct an exposure, wherein a discharge nozzle (21a) and inflow nozzles (23a, 23b) are disposed so as to hold a lens (4) at the tip end of the projection optical system (PL) in an X direction. When the wafer (W) is moved in a -X direction by an XY stage (10), a liquid (7) controlled to a preset temperature is supplied from a liquid supply device (5) via a supply pipe (21) and the discharge nozzle (21a) so as to fill the portion between the lens (4) and the surface of the wafer (W) and the liquid (7) is recovered from the surface of the wafer (W) by a liquid supply device (6) via a recovery pipe (23) and the inflow nozzles (23a, 23b), the supply amount and recovery amount of the liquid (7) being regulated according to a moving speed of the wafer (W).

Description

W 99/49504 P T/JP  W 99/49504 P T / JP
投影露光方法及び装置 技術分野 Projection exposure method and apparatus
本発明は、 例えば、 半導体素子、 撮像素子 (C C D等) 、 液晶表示素 子、 又は薄膜磁気へッ ド等のデ明バイスを製造するためのリソグラフイエ 程でマスクパターンを感光性の基板田上に転写するために用いられる投影 露光方法、 及び装置に関し、 更に詳しくは液浸法を用いた投影露光方法 及び装置に関する。 背景技術  According to the present invention, for example, a mask pattern is formed on a photosensitive substrate in a lithographic process for manufacturing a device such as a semiconductor device, an imaging device (such as a CCD), a liquid crystal display device, or a thin-film magnetic head. The present invention relates to a projection exposure method and apparatus used for transfer, and more particularly to a projection exposure method and apparatus using an immersion method. Background art
半導体素子等を製造する際に、 マスクとしてのレチクルのパターンの 像を投影光学系を介して、 感光性の基板としてのレジス卜が塗布された ウェハ (又はガラスプレート等) 上の各ショット領域に転写する投影露 光装置が使用されている。 従来は投影露光装置として、 ステップ ' アン ド - リピート方式の縮小投影型の露光装置 (ステツパ) が多用されてい たが、 最近ではレチクルとウェハとを同期走査して露光を行うステップ • アンド · スキャン方式の投影露光装置も注目されている。  When manufacturing semiconductor devices, etc., an image of a reticle pattern as a mask is projected onto each shot area on a wafer (or a glass plate, etc.) coated with a resist as a photosensitive substrate via a projection optical system. A transfer projection exposure device is used. Conventionally, a step-and-repeat type reduction projection type exposure apparatus (stepper) has been frequently used as a projection exposure apparatus. Recently, however, a step-and-scan method in which exposure is performed by synchronously scanning a reticle and a wafer. Attention has been paid to a projection exposure apparatus of the type.
投影露光装置に備えられている投影光学系の解像度は、 使用する露光 波長が短くなるほど、 また投影光学系の開口数が大きいほど高くなる。 そのため、 集積回路の微細化に伴い投影露光装置で使用される露光波長 は年々短波長化しており、 投影光学系の開口数も増大してきている。 そ して、 現在主流の露光波長は、 K r Fエキシマレ一ザの 2 4 8 n mであ るが、 更に短波長の A r Fエキシマレ一ザの 1 9 3 n mも実用化されつ つある。 また、 露光を行う際には、 解像度と同様に焦点深度 (DOF) も重要 となる。 解像度 R、 及び焦点深度 (5はそれぞれ以下の式で表される。 The resolution of the projection optical system provided in the projection exposure apparatus increases as the exposure wavelength used decreases and as the numerical aperture of the projection optical system increases. For this reason, with the miniaturization of integrated circuits, the exposure wavelength used in projection exposure apparatuses is becoming shorter year by year, and the numerical aperture of projection optical systems is also increasing. The exposure wavelength currently mainstream is 248 nm for KrF excimer lasers, but 193 nm for shorter-wavelength ArF excimer lasers is being put into practical use. When performing exposure, the depth of focus (DOF) is as important as the resolution. Resolution R and depth of focus (5 are each represented by the following equations.
R= k , ' λ ΝΑ (1)  R = k, 'λ ΝΑ (1)
δ = k 2 · λΖΝΑ2 (2) δ = k 2λ ΖΝΑ 2 (2)
ここで、 λは露光波長、 ΝΑは投影光学系の開口数、 k, , k2 はプ ロセス係数である。 ( 1) 式、 (2) 式より、 解像度 Rを高めるために、 露光波長 λを短くして、 開口数 ΝΑを大きくすると、 焦点深度 <5が狭く なることが分かる。 従来より投影露光装置では、 オートフォーカス方式 でウェハの表面を投影光学系の像面に合わせ込んで露光を行っているが、 そのためには焦点深度 δはある程度広いことが望ましい。 そこで、 従来 も位相シフトレチクル法、 変形照明法、 多層レジスト法など、 実質的に 焦点深度を広くする提案がなされている。 Here, lambda is the exposure wavelength, Nyuarufa is the numerical aperture of the projection optical system, k,, k 2 is a process factor. From Equations (1) and (2), it can be seen that when the exposure wavelength λ is shortened and the numerical aperture 大 き く is increased to increase the resolution R, the depth of focus <5 is reduced. Conventionally, in a projection exposure apparatus, exposure is performed by aligning the surface of a wafer with an image plane of a projection optical system by an autofocus method. To this end, it is desirable that the depth of focus δ is wide to some extent. Therefore, proposals have been made to substantially increase the depth of focus, such as the phase shift reticle method, the modified illumination method, and the multilayer resist method.
上記の如く従来の投影露光装置では、 露光光の短波長化、 及び投影光 学系の開口数の増大によって、 焦点深度が狭くなつてきている。 そして、 半導体集積回路の一層の高集積化に対応するために、 露光波長の更なる 短波長も研究されており、 このままでは焦点深度が狭くなり過ぎて、 露 光動作時のマージンが不足する恐れがある。  As described above, in the conventional projection exposure apparatus, the depth of focus is becoming narrower due to the shorter wavelength of the exposure light and the increase in the numerical aperture of the projection optical system. In order to cope with higher integration of semiconductor integrated circuits, research on even shorter exposure wavelengths has been studied. In this case, the depth of focus becomes too narrow, and the margin during the exposure operation may be insufficient. There is.
そこで、 実質的に露光波長を短くして、 かつ焦点深度を広くする方法 として、 液浸法が提案されている。 これは、 投影光学系の下面とウェハ 表面との間を水、 又は有機溶媒等の液体で満たし、 液体中での露光光の 波長が、 空気中の lZn倍 (ηは液体の屈折率で通常 1. 2〜1. 6程 度) になることを利用して解像度を向上すると共に、 焦点深度を約 η倍 に拡大するというものである。  Therefore, an immersion method has been proposed as a method of substantially shortening the exposure wavelength and increasing the depth of focus. This is because the space between the lower surface of the projection optical system and the wafer surface is filled with water or a liquid such as an organic solvent, and the wavelength of the exposure light in the liquid is lZn times that in air (η is the refractive index of the liquid. (Approximately 1.2 to 1.6) to improve the resolution and increase the depth of focus to about η times.
この液浸法を、 ステップ · アンド · リピート方式の投影露光装置に単 に適用するものとすると、 1つのショット領域の露光を終了した後、 次 のショッ ト領域にウェハをステップ移動する際に、 投影光学系とウェハ との間から液体が出てしまうため、 再び液体を供給しなければならず、 また、 液体の回収も困難になるという不都合がある。 また、 液浸法を仮 にステップ · アンド , スキャン方式の投影露光装置に適用する場合、 ゥ ェ八を移動させながら露光を行うため、 ウェハを移動させている間も投 影光学系とウェハとの間には液体が満たされている必要がある。 Assuming that this immersion method is simply applied to a step-and-repeat projection exposure apparatus, after exposing one shot area, when step-moving the wafer to the next shot area, Projection optics and wafer In this case, the liquid must be supplied again because the liquid comes out from the space between the two, and there is a disadvantage that it is difficult to recover the liquid. Also, if the immersion method is applied to a step-and-scan projection exposure apparatus, the exposure is performed while moving the wafer, so that the projection optical system and the wafer are not moved while the wafer is being moved. It is necessary that the liquid is filled between them.
本発明は斯かる点に鑑み、 液浸法を適用した場合に、 投影光学系とゥ ェハとが相対移動しても、 投影光学系とウェハとの間に液体を安定に満 たしておくことができる投影露光方法を提供することを目的とする。 ま た、 本発明はそのような投影露光方法を実施できる投影露光装置、 この 投影露光装置の効率的な製造方法、 及びそのような投影露光方法を用い た高機能のデバイスの製造方法を提供することをも目的とする。 発明の開示  In view of the above, the present invention provides a liquid between the projection optical system and the wafer stably even if the projection optical system and the wafer are relatively moved when the immersion method is applied. It is an object of the present invention to provide a projection exposure method that can be set. Further, the present invention provides a projection exposure apparatus capable of performing such a projection exposure method, an efficient manufacturing method of the projection exposure apparatus, and a method of manufacturing a high-performance device using such a projection exposure method. The purpose is also. Disclosure of the invention
本発明による第 1の投影露光方法は、 露光ビームでマスク (R ) を照 明し、 そのマスク (R ) のパターンを投影光学系 (P L ) を介して基板 (W) 上に転写する投影露光方法において、 その基板 (W) を所定方向 に沿って移動させる際に、 その投影光学系 (P L ) のその基板 (W) 側 の光学素子 (4 ) の先端部とその基板 (W) の表面との間を満たすよう に、 その基板 (W) の移動方向に沿って所定の液体 (7 ) を流すように したものである。  In the first projection exposure method according to the present invention, a mask (R) is illuminated with an exposure beam, and a pattern of the mask (R) is transferred onto a substrate (W) via a projection optical system (PL). In the method, when the substrate (W) is moved in a predetermined direction, the tip of the optical element (4) on the substrate (W) side of the projection optical system (PL) and the surface of the substrate (W) The predetermined liquid (7) is caused to flow along the direction of movement of the substrate (W) so as to satisfy the condition (1).
斯かる本発明の第 1の投影露光方法によれば、 液浸法が適用されて、 投影光学系 (P L ) の先端部と基板 (W) との間がその液体で満たされ るため、 基板表面における露光光の波長を空気中における波長の 1 Z n 倍 (nは液体の屈折率) に短波長化でき、 更に焦点深度は空気中に比べ て約 n倍に広がる。 また、 その基板を所定方向に沿って移動させる際に, その基板の移動方向に沿ってその液体を流すため、 基板を移動させる際 にも、 その投影光学系の先端部とその基板の表面との間はその液体によ り満たされる。 また、 その基板上に異物が付着している場合には、 その 基板上に付着している異物をその液体で流し去ることができる。 According to the first projection exposure method of the present invention, the liquid immersion method is applied to fill the space between the tip of the projection optical system (PL) and the substrate (W) with the liquid. The wavelength of the exposure light on the surface can be shortened to 1Zn times the wavelength in air (where n is the refractive index of the liquid), and the depth of focus is expanded about n times compared to in air. Also, when the substrate is moved along a predetermined direction, the liquid flows along the moving direction of the substrate. In addition, the space between the tip of the projection optical system and the surface of the substrate is filled with the liquid. In addition, when foreign matter is attached to the substrate, the foreign matter attached to the substrate can be washed away with the liquid.
次に、 本発明による第 1の投影露光装置は、 露光ビームでマスク (R) を照明し、 そのマスク (R) のパターンを投影光学系 (PL) を介して 基板 (W) 上に転写する投影露光装置において、 その基板 (W) を保持 して移動させる基板ステージ (9, 1 0) と、 その投影光学系 (PL) のその基板 (W) 側の光学素子 (4) の先端部とその基板 (W) の表面 との間を満たすように、 供給用の配管 (2 1 a) を介して所定方向に沿 つて所定の液体 (7) を供給する液体供給装置 (5) と、 その供給用の 配管 (2 1 a) と共にその所定方向にその露光ビームの照射領域を挟む ように配置された排出用の配管 (23 a, 23 b) を介してその基板 (W) の表面からその液体 (7) を回収する液体回収装置 (6) とを有 し、 その基板ステージ (9, 1 0) を駆動してその基板 (W) をその所 定方向に沿って移動させる際に、 その液体 (7) の供給及び回収を行う ものである。  Next, the first projection exposure apparatus according to the present invention illuminates the mask (R) with the exposure beam, and transfers the pattern of the mask (R) onto the substrate (W) via the projection optical system (PL). In a projection exposure apparatus, a substrate stage (9, 10) for holding and moving the substrate (W), and a tip of an optical element (4) on the substrate (W) side of the projection optical system (PL). A liquid supply device (5) for supplying a predetermined liquid (7) along a predetermined direction through a supply pipe (21a) so as to fill the space between the substrate and the surface of the substrate (W); From the surface of the substrate (W) through the discharge pipes (23a, 23b) arranged so as to sandwich the irradiation area of the exposure beam in the predetermined direction together with the supply pipes (21a). And a liquid recovery device (6) for recovering the liquid (7). The substrate stage (9, 10) is driven to remove the substrate (W). When moving along the Jo Tokoro, and performs supply and recovery of the liquid (7).
斯かる本発明の第 1の投影露光装置によれば、 それらの配管を用いる ことによって本発明の第 1の投影露光方法を実施することができる。 また、 その 1対の供給用の配管 (2 1 a) 及び排出用の配管 (23 a, 23 b) を実質的に 1 80° 回転した配置の第 2の 1対の供給用の配管 (22 a) 、 及び排出用の配管 (24 a, 24 b) を設けることが望ま しい。 この場合、 基板 (W) をその所定の方向と反対の方向に移動する 際には、 後者の 1対の配管を用いることで、 その投影光学系 (PL) の 先端部とその基板 (W) の表面との間をその液体 (7) により安定に満 たし続けることができる。  According to the first projection exposure apparatus of the present invention, the first projection exposure method of the present invention can be performed by using those pipes. In addition, the pair of supply pipes (21a) and the discharge pipes (23a, 23b) are rotated substantially 180 ° so that a second pair of supply pipes (22 It is desirable to provide a) and pipes for discharge (24a, 24b). In this case, when the substrate (W) is moved in a direction opposite to the predetermined direction, the tip of the projection optical system (PL) and the substrate (W) are used by using the latter pair of pipes. The liquid (7) can be more stably filled with the liquid surface.
また、 その投影露光装置はマスク (R) と基板 (W) とをその投影光 学系 (P L) に対して同期移動して露光を行う走査露光型である場合、 その所定方向は走査露光時のその基板 (W) の走査方向であることが望 ましい。 この場合、 走査露光中も継続してその投影光学系 (PL) のそ の基板 (W) 側の光学素子 (4) の先端部とその基板 (W) の表面との 間をその液体 (7) により満たし続けることができ、 高精度かつ安定に 露光を行うことができる。 The projection exposure apparatus converts the mask (R) and the substrate (W) into the projection light. In the case of a scanning exposure type in which exposure is performed synchronously with respect to the science (PL), it is desirable that the predetermined direction is the scanning direction of the substrate (W) at the time of scanning exposure. In this case, even during the scanning exposure, the liquid (7) flows between the tip of the optical element (4) on the substrate (W) side of the projection optical system (PL) and the surface of the substrate (W). ), The exposure can be performed with high accuracy and stability.
また、 その所定方向に直交する方向に、 その 1対の供給用の配管 (2 1 a) 及び排出用の配管 ( 2 3 a, 2 3 b) に対応する配置で 1対、 又 は 2対の供給用の配管 (2 7 a) 、 及び排出用の配管 (2 9 a, 2 9 b) を設けることが望ましい。 この場合、 基板 (W) をその所定の方向に直 交する方向にステップ移動させる際にも、 その投影光学系 (PL) の先 端部とその基板 (W) の表面との間をその液体 ( 7) により満たし続け ることができる。  Also, in a direction orthogonal to the predetermined direction, one pair or two pairs in an arrangement corresponding to the pair of supply pipes (21a) and the discharge pipes (23a, 23b). It is desirable to provide a supply pipe (27a) and a discharge pipe (29a, 29b). In this case, even when the substrate (W) is step-moved in a direction orthogonal to the predetermined direction, the liquid is moved between the front end of the projection optical system (PL) and the surface of the substrate (W). (7) can be satisfied.
また、 その基板ステージの移動速度に応じてその液体 (7) の供給量、 及び回収量を調整する制御系 ( 14) を有することが望ましい。 即ち、 例えばその移動速度が速いときにはその供給量を増加させて、 その移動 速度が遅いときにはその供給量を少なくすることで、 その液体を無駄な くその投影光学系 (P L) の先端部とその基板 (W) の表面との間に一 定に満たしておくことができる。  It is desirable to have a control system (14) for adjusting the supply amount and the recovery amount of the liquid (7) according to the moving speed of the substrate stage. That is, for example, when the moving speed is high, the supply amount is increased, and when the moving speed is low, the supply amount is reduced, so that the tip of the projection optical system (PL) and the The space between the substrate and the surface of the substrate (W) can be kept constant.
また、 その基板 (W) の表面に供給されるその液体 ( 7) は、 一例と して所定の温度に調整された純水、 又はフッ素系不活性液体である。 こ の場合、 純水は例えば半導体製造工場ではその入手が容易であり、 環境 的にも問題がない。 また、 その液体 ( 7) が温度調整されているため、 基板表面の温度調整を行うことができ、 露光中に生じる熱による基板 (W) の熱膨張を防ぐことができる。 その液体は露光ビームに対する透 過率が高い方が望ましいのは当然であるが、 透過率が低い場合でも、 投 P The liquid (7) supplied to the surface of the substrate (W) is, for example, pure water or a fluorine-based inert liquid adjusted to a predetermined temperature. In this case, pure water is easily available at, for example, a semiconductor manufacturing plant, and there is no environmental problem. Further, since the temperature of the liquid (7) is adjusted, the temperature of the substrate surface can be adjusted, and thermal expansion of the substrate (W) due to heat generated during exposure can be prevented. Naturally, it is desirable that the liquid has a high transmittance to the exposure beam. P
6 影光学系の作動距離は短いため、 露光ビームの吸収量は極めて少ない。 次に、 本発明による投影露光装置の製造方法は、 露光ビームをマスク (R) に照射する照明系 ( 1 ) と、 そのマスクのパターンの像を基板 (W) 上に転写する投影光学系 (P L) と、 その基板 (W) を保持して 移動させる基板ステージ (9, 1 0) と、 その投影光学系 (PL) のそ の基板 (W) 側の光学素子 (4) の先端部とその基板 (W) の表面との 間を満たすように、 供給用の配管 (2 1 a) を介して所定方向に沿って 所定の液体 (7) を供給する液体供給装置 (5) と、 その供給用の配管 ( 2 1 a) と共にその所定方向にその露光ビームの照射領域 (4) を挟 むように配置された排出用の配管 ( 2 3 a, 2 3 b) を介してその基板 (W) の表面からその液体 (7) を回収する液体回収装置 (6) とを所 定の位置関係で組み上げて投影露光装置を製造するものである。 6 Since the working distance of the shadow optics is short, the absorption of the exposure beam is extremely small. Next, the method for manufacturing a projection exposure apparatus according to the present invention comprises an illumination system (1) for irradiating an exposure beam onto a mask (R), and a projection optical system (1) for transferring an image of a pattern of the mask onto a substrate (W). PL), the substrate stage (9, 10) for holding and moving the substrate (W), and the tip of the optical element (4) on the substrate (W) side of the projection optical system (PL). A liquid supply device (5) for supplying a predetermined liquid (7) along a predetermined direction via a supply pipe (21a) so as to fill the space between the substrate and the surface of the substrate (W); The substrate (W) is connected to the supply pipe (21a) via the discharge pipe (23a, 23b) arranged so as to sandwich the exposure beam irradiation area (4) in the predetermined direction together with the supply pipe (21a). A projection exposure apparatus is manufactured by assembling a liquid recovery device (6) for recovering the liquid (7) from the surface of the device with a predetermined positional relationship.
また、 本発明による第 1のデバイスの製造方法は、 本発明の第 1の投 影露光方法を用いたデバイスの製造方法であって、 露光ビームでマスク (R) を照明し、 そのマスク (R) のパターンを投影光学系 (P L) を 介してそのデバイス用の基板 (W) 上に転写する露光工程を含み、 この 露光工程において基板 (W) を所定方向に沿って移動させる際に、 その 投影光学系 (P L) のその基板 (W) 側の光学素子 (4) の先端部とそ の基板 (W) の表面との間を満たすように、 その基板 (W) の移動方向 に沿って所定の液体 ( 7) を流すようにしたものであり、 液浸法が適用 されて、 高機能のデバイスを製造することができる。  A first device manufacturing method according to the present invention is a device manufacturing method using the first projection exposure method according to the present invention, wherein a mask (R) is illuminated with an exposure beam, and the mask (R) is illuminated. ) Is transferred to the device substrate (W) via the projection optical system (PL) through the projection optical system (PL). In this exposure step, when the substrate (W) is moved along a predetermined direction, In order to fill the gap between the tip of the optical element (4) on the substrate (W) side of the projection optical system (PL) and the surface of the substrate (W), along the moving direction of the substrate (W) A predetermined liquid (7) is allowed to flow, and a high-performance device can be manufactured by applying the immersion method.
次に、 本発明による第 2の投影露光方法は、 露光ビームでマスク (R) を照明し、 投影光学系 (P L) を介してその露光ビームで基板 (W) を 露光する投影露光方法において、 その投影光学系とその基板との間を満 たすように液体 ( 7) を流すとともに、 その基板の移動方向に応じてそ の液体を流す方向を変化させるものである。 斯かる本発明の第 2の投影露光方法によれば、 液浸法が適用されて、 投影光学系 (P L ) と基板 (W) との間がその液体で満たされるため、 基板表面における露光光の波長を空気中における波長の 1 Z n倍 (nは 液体の屈折率) に短波長化でき、 更に焦点深度は空気中に比べて約 n倍 に広がる。 また、 その基板の移動方向に応じてその液体を流す方向を変 化させることにより、 その基板の移動方向が頻繁に変化する場合であつ ても、 その投影光学系とその基板との間にその液体を満たしておくこと ができる。 Next, a second projection exposure method according to the present invention is directed to a projection exposure method for illuminating a mask (R) with an exposure beam and exposing a substrate (W) with the exposure beam via a projection optical system (PL). The liquid (7) flows so as to fill the space between the projection optical system and the substrate, and the direction in which the liquid flows varies according to the moving direction of the substrate. According to the second projection exposure method of the present invention, since the liquid between the projection optical system (PL) and the substrate (W) is filled with the liquid by applying the immersion method, the exposure light on the substrate surface is exposed. Can be shortened to 1Zn times the wavelength in air (n is the refractive index of the liquid), and the depth of focus is about n times wider than in air. In addition, by changing the direction in which the liquid flows in accordance with the direction of movement of the substrate, even if the direction of movement of the substrate changes frequently, the distance between the projection optical system and the substrate is reduced. Can be filled with liquid.
また、 その液体 (7 ) の供給速度をその基板の移動方向の第 1成分と、 その移動方向に直交する第 2成分とに分けたとき、 その第 1成分がその 基板 (W) の移動方向と逆向きのときは所定の許容値以下の大きさとな るようにその液体 (7 ) を流すことが望ましい。 これによつて、 その基 板 (W) の移動方向と逆向きの液体の速度成分が小さくなるため、 液体 を円滑に供給できる。  Further, when the supply speed of the liquid (7) is divided into a first component in the moving direction of the substrate and a second component orthogonal to the moving direction, the first component is in the moving direction of the substrate (W). When the direction is opposite to the above, it is desirable to flow the liquid (7) so as to be smaller than a predetermined allowable value. This reduces the velocity component of the liquid in the direction opposite to the direction of movement of the substrate (W), so that the liquid can be supplied smoothly.
また、 その基板 (W) の移動方向にほぼ沿って同じ向きにその液体 ( 7 ) を流すことがより望ましい。  More preferably, the liquid (7) flows in the same direction substantially along the direction of movement of the substrate (W).
また、 その基板 (W) がステップ · アンド · リピート方式又はステツ プ · アンド ·スキャン方式で露光される場合には、 その基板 (W) のス テツビング方向にほぼ沿ってその液体 (7 ) を流すことが望ましい。  When the substrate (W) is exposed by the step-and-repeat method or the step-and-scan method, the liquid (7) is caused to flow substantially along the stepping direction of the substrate (W). It is desirable.
また、 その露光ビームに対してそのマスク (R ) とその基板 (W) と をそれぞれ相対移動して、 その露光ビームでその基板を走査露光すると ともに、 その走査露光中、 その基板の走査方向にほぼ沿ってその液体 ( 7 ) を流すことが望ましい。  Further, the mask (R) and the substrate (W) are relatively moved with respect to the exposure beam, and the substrate is scanned and exposed with the exposure beam, and the substrate is scanned in the scanning direction during the scanning exposure. It is desirable to flow the liquid (7) approximately along.
また、 その基板 ν) の移動速度に応じてその液体 ( 7 ) の流量を調 整することが望ましい。  It is desirable to adjust the flow rate of the liquid (7) according to the moving speed of the substrate ν).
次に、 本発明による第 2のデバイスの製造方法は、 本発明の第 2の投 影露光方法を用いて、 デバイスパターンを基板 (W) 上に転写する工程 を有するリソグラフイエ程を含むものであり、 液浸法が適用されて、 高 機能のデバイスを製造することができる。 Next, the method for manufacturing a second device according to the present invention includes the second method according to the present invention. The method includes a lithographic process including a step of transferring a device pattern onto a substrate (W) using a shadow exposure method. A high-performance device can be manufactured by applying an immersion method.
次に、 本発明による第 2の投影露光装置は、 露光ビームでマスク (R) を照明し、 投影光学系 (P L) を介してその露光ビームで基板 (W) 上 に露光する投影露光装置において、 その投影光学系とその基板との間を 満たすように液体 (7) を流すとともに、 その基板の移動方向に応じて その液体を流す方向を変化させる液体供給装置 ( 5) を備えたものであ る。  Next, a second projection exposure apparatus according to the present invention illuminates a mask (R) with an exposure beam and exposes the substrate (W) with the exposure beam via a projection optical system (PL). A liquid supply device (5) for flowing the liquid (7) so as to fill the space between the projection optical system and the substrate, and changing the flowing direction of the liquid according to the moving direction of the substrate. is there.
斯かる本発明の第 2の投影露光装置によれば、 本発明の第 2の投影露 光方法を実施することができ、 その基板の移動方向が頻繁に変化する場 合であっても、 その投影光学系とその基板との間にその液体を満たして おくことができる。  According to such a second projection exposure apparatus of the present invention, the second projection exposure method of the present invention can be implemented, and even when the moving direction of the substrate changes frequently, The liquid can be filled between the projection optical system and the substrate.
また、 その露光ビームに対してそのマスク (R) とその基板 (W) と をそれぞれ相対移動するステージ ' システム (R S T, 9〜 1 1 ) を更 に備え、 その液体供給装置 ( 5) は、 その基板の走査露光中、 その基板 の移動方向にほぼ沿ってその液体 (7 ) を流すことが望ましい。  In addition, a stage ′ system (RST, 9 to 11) for moving the mask (R) and the substrate (W) relative to the exposure beam is further provided, and the liquid supply device (5) During the scanning exposure of the substrate, it is desirable to flow the liquid (7) substantially along the moving direction of the substrate.
また、 その投影光学系 (P L) とその基板 (W) との間に供給された 液体 (7) を回収する液体回収装置 (6) を更に備えることが望ましレ^ また、 その液体供給装置 ( 5) の供給口 (2 1 a) とその液体回収装 置 (6) の回収口 (2 3 a, 2 3 b) とはその露光ビームの照射領域を 挟んで配置されることが望ましい。 図面の簡単な説明  Further, it is desirable to further include a liquid recovery device (6) for recovering the liquid (7) supplied between the projection optical system (PL) and the substrate (W). It is desirable that the supply port (21a) of (5) and the recovery port (23a, 23b) of the liquid recovery device (6) are arranged with the irradiation area of the exposure beam interposed therebetween. BRIEF DESCRIPTION OF THE FIGURES
図 1は、 本発明の第 1の実施の形態において使用される投影露光装置 の概略構成を示す図である。 図 2は、 図 1の投影光学系 P Lのレンズ 4 の先端部 4 Aと X方向用の排出ノズル及び流入ノズルとの位置関係を示 す図である。 図 3は、 図 1の投影光学系 P Lのレンズ 4の先端部 4 Aと、 Y方向から液体の供給及び回収を行う排出ノズル及び流入ノズルとの位 置関係を示す図である。 図 4は、 図 1のレンズ 4とウェハ Wとの間への 液体 7の供給及び回収の様子を示す要部の拡大図である。 図 5は、 本発 明の第 2の実施の形態において使用される投影露光装置の投影光学系 P L Aの下端部、 液体供給装置 5、 及び液体回収装置 6等を示す正面図で ある。 図 6は、 図 5の投影光学系 P L Aのレンズ 3 2の先端部 3 2 Aと X方向用の排出ノズル及び流入ノズルとの位置関係を示す図である。 図 7は、 図 5の投影光学系 P L Aのレンズ 3 2の先端部 3 2 Aと、 Y方向 から液体の供給及び回収を行う排出ノズル及び流入ノズルとの位置関係 を示す図である。 発明を実施するための最良の形態 FIG. 1 is a diagram showing a schematic configuration of a projection exposure apparatus used in the first embodiment of the present invention. Fig. 2 shows the lens 4 of the projection optical system PL in Fig. 1. FIG. 6 is a diagram showing a positional relationship between a tip 4A of the X-axis and a discharge nozzle and an inflow nozzle for the X direction. FIG. 3 is a diagram showing the positional relationship between the tip 4A of the lens 4 of the projection optical system PL in FIG. 1, and the discharge nozzle and the inflow nozzle that supply and recover the liquid from the Y direction. FIG. 4 is an enlarged view of a main part showing how the liquid 7 is supplied and recovered between the lens 4 and the wafer W in FIG. FIG. 5 is a front view showing the lower end of the projection optical system PLA of the projection exposure apparatus used in the second embodiment of the present invention, the liquid supply device 5, the liquid recovery device 6, and the like. FIG. 6 is a diagram showing a positional relationship between the tip 32A of the lens 32 of the projection optical system PLA of FIG. 5 and the discharge nozzle and the inflow nozzle for the X direction. FIG. 7 is a diagram showing the positional relationship between the tip 32A of the lens 32 of the projection optical system PLA in FIG. 5, and the discharge nozzle and the inflow nozzle that supply and recover the liquid from the Y direction. BEST MODE FOR CARRYING OUT THE INVENTION
以下、 本発明の好適な実施の形態の一例につき図 1〜図 4を参照して 説明する。 本例は本発明をステップ · アンド · リピート方式の投影露光 装置で露光を行う場合に適用したものである。  Hereinafter, an example of a preferred embodiment of the present invention will be described with reference to FIGS. In this embodiment, the present invention is applied to a case where exposure is performed by a step-and-repeat projection exposure apparatus.
図 1は本例の投影露光装置の概略構成を示し、 この図 1において、 露 光光源としての K r Fエキシマレーザ光源、 オプティカル 'インテグレ —夕 (ホモジナイザー) 、 視野絞り、 コンデンサレンズ等を含む照明光 学系 1から射出された波長 2 4 8 n mの紫外パルス光よりなる露光光 I Lは、 レチクル Rに設けられたパターンを照明する。 レチクル Rのパ夕 ーンは、 両側 (又はウェハ W側に片側) テレセントリックな投影光学系 P Lを介して所定の投影倍率 ]3 ( 3は例えば 1ノ4, 1 Z 5等) でフォ トレジス卜が塗布されたウェハ W上の露光領域に縮小投影される。 なお 露光光 I Lとしては、 A r Fエキシマレーザ光 (波長 1 9 3 n m) 、 F 2 レーザ光 (波長 1 5 7 n m) や水銀ランプの i線 (波長 3 6 5 n m) 等を使用してもよい。 以下、 投影光学系 P Lの光軸 A Xに平行に Z軸を 取り、 Z軸に垂直な平面内で図 1の紙面に垂直に Y軸を取り、 図 1の紙 面に平行に X軸を取って説明する。 FIG. 1 shows a schematic configuration of the projection exposure apparatus of the present embodiment. In FIG. Exposure light IL composed of ultraviolet pulse light of wavelength 248 nm emitted from optical system 1 illuminates the pattern provided on reticle R. The pattern of the reticle R is photolithographic at both sides (or one side on the wafer W side) through a telecentric projection optical system PL at a predetermined projection magnification] 3 (3 is, for example, 1/4, 1Z5, etc.). Is reduced and projected on the exposure area on the wafer W to which the is applied. The exposure light IL includes ArF excimer laser light (wavelength 1933 nm), F 2 Laser light (wavelength: 157 nm) or i-line from a mercury lamp (wavelength: 365 nm) may be used. Hereinafter, the Z axis is taken parallel to the optical axis AX of the projection optical system PL, the Y axis is taken perpendicular to the plane of FIG. 1 in a plane perpendicular to the Z axis, and the X axis is taken parallel to the plane of FIG. Will be explained.
レチクル Rはレチクルステージ R S T上に保持され、 レチクルステー ジ R S Tには X方向、 Y方向、 回転方向にレチクル Rを微動する機構が 組み込まれている。 レチクルステージ R S Tの 2次元的な位置、 及び回 転角はレーザ干渉計 (不図示) によってリアルタイムに計測され、 この 計測値に基づいて主制御系 1 4がレチクル Rの位置決めを行う。  The reticle R is held on a reticle stage R ST, and the reticle stage R ST incorporates a mechanism for finely moving the reticle R in the X, Y, and rotation directions. The two-dimensional position and rotation angle of reticle stage RST are measured in real time by a laser interferometer (not shown), and main control system 14 positions reticle R based on the measured values.
一方、 ウェハ Wはウェハホルダ (不図示) を介してウェハ Wのフォー カス位置 (Z方向の位置) 及び傾斜角を制御する Zステージ 9上に固定 されている。 Zステージ 9は投影光学系 P Lの像面と実質的に平行な X Y平面に沿って移動する X Yステージ 1 0上に固定され、 X Yステージ 1 0はベース 1 1上に載置されている。 Zステージ 9は、 ウェハ Wのフ オーカス位置 (Z方向の位置) 、 及び傾斜角を制御してゥェ八 W上の表 面をォートフォーカス方式、 及びォートレベリング方式で投影光学系 P Lの像面に合わせ込み、 X Yステージ 1 0はウェハ Wの X方向、 及び Y 方向の位置決めを行う。 Zステージ 9 (ウェハ W) の 2次元的な位置、 及び回転角は、 移動鏡 1 2の位置としてレーザ干渉計 1 3によってリァ ルタイムに計測されている。 この計測結果に基づいて主制御系 1 4から ウェハステージ駆動系 1 5に制御情報が送られ、 これに基づいてウェハ ステージ駆動系 1 5は、 Zステージ 9、 X Yステージ 1 0の動作を制御 する。 露光時にはゥェ八 W上の各ショット領域を順次露光位置にステツ プ移動し、 レチクル Rのパターン像を露光する動作がステップ · アンド · リピート方式で繰り返される。  On the other hand, the wafer W is fixed via a wafer holder (not shown) on a Z stage 9 for controlling a focus position (a position in the Z direction) and an inclination angle of the wafer W. The Z stage 9 is fixed on an XY stage 10 that moves along an XY plane substantially parallel to the image plane of the projection optical system PL, and the XY stage 10 is mounted on a base 11. The Z stage 9 controls the focus position (position in the Z direction) and the tilt angle of the wafer W to adjust the surface on the wafer W to the image plane of the projection optical system PL by an autofocus method and an autoleveling method. The XY stage 10 positions the wafer W in the X and Y directions. The two-dimensional position and rotation angle of the Z stage 9 (wafer W) are measured in real time by the laser interferometer 13 as the position of the movable mirror 12. Control information is sent from the main control system 14 to the wafer stage drive system 15 based on the measurement result, and the wafer stage drive system 15 controls the operation of the Z stage 9 and the XY stage 10 based on the control information. . During exposure, each shot area on the wafer W is sequentially moved to the exposure position, and the operation of exposing the pattern image of the reticle R is repeated in a step-and-repeat manner.
さて、 本例では露光波長を実質的に短く して解像度を向上すると共に 焦点深度は実質的に広くするために、 液浸法を適用する。 そのため、 少 なくともレチクル Rのパ夕一ン像をウェハ W上に転写している間は、 ゥ ェハ Wの表面と投影光学系 P Lのゥェ八側のレンズ 4の先端面 (下面) との間に所定の液体 7を満たしておく。 投影光学系 P Lは、 他の光学系 を収納する鏡筒 3と、 そのレンズ 4とを有しており、 レンズ 4のみに液 体 7が接触するように構成されている。 これによつて、 金属よりなる鏡 筒 3の腐食等が防止されている。 In this example, the exposure wavelength is substantially shortened to improve the resolution and Apply the immersion method to increase the depth of focus substantially. For this reason, at least while the transfer image of the reticle R is being transferred onto the wafer W, the surface of the wafer W and the tip surface (lower surface) of the lens 4 on the wafer side of the projection optical system PL And a predetermined liquid 7 is filled. The projection optical system PL has a lens barrel 3 that houses another optical system and a lens 4 thereof, and is configured so that the liquid 7 contacts only the lens 4. Thus, corrosion of the lens barrel 3 made of metal is prevented.
なお、 投影光学系 P Lは、 レンズ 4を含む複数の光学素子からなり、 レンズ 4は鏡筒 3の最下部に着脱 (交換) 自在に固定されている。 本例 では、 ウェハ Wに最も近い、 即ち液体 7と接触する光学素子をレンズと しているが、 その光学素子はレンズに限られるものではなく、 投影光学 系 P Lの光学特性、 例えば収差 (球面収差、 コマ収差等) の調整に用い る光学プレート (平行平面板等) であってもよい。 また、 露光光の照射 によってレジス卜から発生する飛散粒子、 又は液体 7中の不純物の付着 等に起因して液体 7に接触する光学素子の表面が汚れるため、 その光学 素子を定期的に交換する必要がある。 しかしながら、 液体 7に接触する 光学素子がレンズであると、 その交換部品のコストが高く、 かつ交換に 要する時間が長くなつてしまい、 メンテナンスコスト (ランニングコス ト) の上昇やスループッ トの低下を招く。 そこで液体 7と接触する光学 素子を、 例えばレンズ 4よりも安価な平行平面板とするようにしてもよ レ この場合、 投影露光装置の運搬、 組立、 調整時等において投影光学 系 P Lの透過率、 ウェハ W上での露光光の照度、 及び照度分布の均一性 等を低下させる物質 (例えばシリコン系有機物等) がその平行平面板に 付着しても、 液体 7を供給する直前にその平行平面板を交換するだけで よく、 液体 7と接触する光学素子をレンズとする場合に比べてその交換 コストが低くくなるという利点もある。 また、 液体 7として、 本例では例えば純水を使用する。 純水は、 半導 体製造工場等で容易に大量に入手できると共に、 ウェハ上のフォトレジ ストや光学レンズ等に対する悪影響がない利点がある。 また、 純水は環 境に対する悪影響がないと共に、 不純物の含有量が極めて低いため、 ゥ ェハの表面、 及びレンズ 4の表面を洗浄する作用も期待できる。 The projection optical system PL is composed of a plurality of optical elements including a lens 4, and the lens 4 is fixed to the lowermost part of the lens barrel 3 so as to be detachable (exchangeable). In this example, the lens is the optical element closest to the wafer W, that is, the optical element that comes into contact with the liquid 7, but the optical element is not limited to the lens, and the optical characteristics of the projection optical system PL, such as aberration (spherical) An optical plate (parallel plane plate or the like) used for adjusting aberration, coma aberration, or the like may be used. In addition, since the surface of the optical element that comes into contact with the liquid 7 due to scattered particles generated from the registry due to exposure of the exposure light or the attachment of impurities in the liquid 7 becomes dirty, the optical element is periodically replaced. There is a need. However, if the optical element that comes into contact with the liquid 7 is a lens, the cost of replacement parts is high and the time required for replacement is long, leading to an increase in maintenance cost (running cost) and a decrease in throughput. . Therefore, the optical element that comes into contact with the liquid 7 may be, for example, a parallel flat plate that is less expensive than the lens 4. In this case, the transmittance of the projection optical system PL during transportation, assembly, adjustment, and the like of the projection exposure apparatus Even if a substance (for example, a silicon-based organic substance) that reduces the illuminance of the exposure light and the uniformity of the illuminance distribution on the wafer W adheres to the parallel flat plate, the parallel flat plate may be provided immediately before the liquid 7 is supplied. It is only necessary to replace the face plate, and there is an advantage that the replacement cost is lower than when the optical element that comes into contact with the liquid 7 is a lens. In this example, pure water is used as the liquid 7, for example. Pure water has the advantage that it can be easily obtained in large quantities at semiconductor manufacturing plants and the like, and that there is no adverse effect on the photoresist on the wafer, optical lenses, and the like. In addition, pure water has no adverse effect on the environment and has an extremely low impurity content, so that it can be expected to have an effect of cleaning the surface of the wafer and the surface of the lens 4.
そして、 波長が 2 5 0 n m程度の露光光に対する純水 (水) の屈折率 nはほぼ 1 . 4であるため、 K r Fエキシマレ一ザ光の波長 2 4 8 n m は、 ウェハ W上では l Z n、 即ち約 1 7 7 n mに短波長化されて高い解 像度が得られる。 更に、 焦点深度は空気中に比べて約 n倍、 即ち約 1 . 4倍に拡大されるため、 空気中で使用する場合と同程度の焦点深度が確 保できればよい場合には、 投影光学系 P Lの開口数をより増加させるこ とができ、 この点でも解像度が向上する。  Since the refractive index n of pure water (water) with respect to exposure light having a wavelength of about 250 nm is approximately 1.4, the wavelength of KrF excimer laser light, 248 nm, The wavelength is shortened to lZn, that is, about 1777 nm, and a high resolution is obtained. Furthermore, since the depth of focus is expanded about n times, that is, about 1.4 times as compared with that in the air, when it is sufficient to secure the same depth of focus as that used in the air, the projection optical system The numerical aperture of the PL can be further increased, and the resolution is improved in this respect as well.
その液体 7は、 その液体のタンク、 加圧ポンプ、 温度制御装置等から なる液体供給装置 5によって、 所定の排出ノズル等を介してウェハ W上 に温度制御された状態で供給され、 その液体のタンク及び吸引ポンプ等 からなる液体回収装置 6によって、 所定の流入ノズル等を介してウェハ W上から回収される。 液体 7の温度は、 例えば本例の投影露光装置が収 納されているチャンバ内の温度と同程度に設定されている。 そして、 投 影光学系 P Lのレンズ 4の先端部を X方向に挟むように先端部が細くな つた排出ノズル 2 1 a、 及び先端部が広くなつた 2つの流入ノズル 2 3 a , 2 3 b (図 2参照) が配置されており、 排出ノズル 2 l aは供給管 2 1を介して液体供給装置 5に接続され、 流入ノズル 2 3 a, 2 3 bは 回収管 2 3を介して液体回収装置 6に接続されている。 更に、 その 1対 の排出ノズル 2 1 a、 及び流入ノズル 2 3 a , 2 3 bをほぼ 1 8 0 ° 回 転した配置の 1対のノズル、 及びそのレンズ 4の先端部を Y方向に挟む ように配置された 2対の排出ノズル、 及び流入ノズルも配置されている, 図 2は、 図 1の投影光学系 P Lのレンズ 4の先端部 4 A及びウェハ W と、 その先端部 4 Aを X方向に挟む 2対の排出ノズル及び流入ノズルと の位置関係を示し、 この図 2において、 先端部 4 Aの + X方向側に排出 ノズル 2 1 aが、 一 X方向側に流入ノズル 2 3 a, 2 3 bがそれぞれ配 置されている。 また、 流入ノズル 2 3 a, 2 3 bは先端部 4 Aの中心を 通り X軸に平行な軸に対して扇状に開いた形で配置されている。 そして、 1対の排出ノズル 2 1 a、 及び流入ノズル 2 3 a , 2 3 bをほぼ 1 8 0 ° 回転した配置で別の 1対の排出ノズル 2 2 a、 及び流入ノズル 2 4 a, 2 4 bが配置され、 排出ノズル 2 2 aは供給管 2 2を介して液体供給装 置 5に接続され、 流入ノズル 2 4 a, 2 4 bは回収管 2 4を介して液体 回収装置 6に接続されている。 The liquid 7 is supplied to the wafer W through a predetermined discharge nozzle or the like in a temperature-controlled manner by a liquid supply device 5 including a liquid tank, a pressure pump, a temperature control device, and the like. The liquid is collected from the wafer W through a predetermined inflow nozzle or the like by a liquid recovery device 6 including a tank and a suction pump. The temperature of the liquid 7 is set to, for example, about the same as the temperature in the chamber in which the projection exposure apparatus of the present example is stored. Then, a discharge nozzle 21a having a narrow tip so as to sandwich the distal end of the lens 4 of the projection optical system PL in the X direction, and two inflow nozzles 23a and 23b having a wide distal end (See Fig. 2), the discharge nozzle 2 la is connected to the liquid supply device 5 through the supply pipe 21, and the inflow nozzles 23 a and 23 b are recovered through the recovery pipe 23 Connected to device 6. Further, the pair of discharge nozzles 21a and the pair of nozzles arranged such that the inflow nozzles 23a and 23b are rotated by approximately 180 °, and the tip of the lens 4 are sandwiched in the Y direction. There are also arranged two pairs of discharge nozzles, and an inflow nozzle, FIG. 2 shows the positional relationship between the tip 4A and the wafer W of the lens 4 of the projection optical system PL of FIG. 1 and two pairs of discharge nozzles and inflow nozzles that sandwich the tip 4A in the X direction. In FIG. 2, the discharge nozzle 21a is arranged on the + X direction side of the tip 4A, and the inflow nozzles 23a and 23b are arranged on the one X direction side. The inflow nozzles 23a and 23b are arranged so as to open in a fan shape with respect to an axis passing through the center of the tip 4A and parallel to the X axis. Then, one pair of discharge nozzles 21a and inflow nozzles 23a and 23b are rotated by approximately 180 °, and another pair of discharge nozzles 22a and inflow nozzles 24a and 24a are arranged. 4 b is arranged, the discharge nozzle 22 a is connected to the liquid supply device 5 via the supply pipe 22, and the inflow nozzles 24 a, 24 b are connected to the liquid recovery device 6 via the recovery pipe 24. It is connected.
また、 図 3は、 図 1の投影光学系 P Lのレンズ 4の先端部 4 Aと、 そ の先端部 4 Aを Y方向に挟む 2対の排出ノズル及び流入ノズルとの位置 関係を示し、 この図 3において、 先端部 4 Aの + Y方向側に排出ノズル 2 Ί Ά 、 —Y方向側に流入ノズル 2 9 a , 2 9 bがそれぞれ配置され、 排出ノズル 2 7 aは供給管 2 7を介して液体供給装置 5に接続され、 流 入ノズル 2 9 a, 2 9 bは回収管 2 9を介して液体回収装置 6に接続さ れている。 また、 1対の排出ノズル 2 7 a、 及び流入ノズル 2 9 a, 2 9 bをほぼ 1 8 0 ° 回転した配置で別の 1対の排出ノズル 2 8 a、 及び 流入ノズル 3 0 a , 3 0 bが配置され、 排出ノズル 2 8 aは供給管 2 8 を介して液体供給装置 5に接続され、 流入ノズル 3 0 a , 3 O bは回収 管 3 0を介して液体回収装置 6に接続されている。 液体供給装置 5は、 供給管 2 1, 2 2, 2 7, 2 8の少なくとも一つを介してレンズ 4の先 端部 4 Aとウェハ Wとの間に温度制御された液体を供給し、 液体回収装 置 6は回収管 2 3, 2 4 , 2 9, 3 0の少なくとも一つを介してその液 体を回収する。 次に、 液体 7の供給及び回収方法について説明する。 FIG. 3 shows the positional relationship between the tip 4A of the lens 4 of the projection optical system PL of FIG. 1 and two pairs of discharge nozzles and inflow nozzles that sandwich the tip 4A in the Y direction. In FIG. 3, discharge nozzles 2 Ί Ά, 流入 inflow direction nozzles 29 a, 29 b are disposed on the + Y direction side of the tip 4 A, and discharge nozzle 27 a is connected to the supply pipe 27. The inlet nozzles 29 a and 29 b are connected to the liquid recovery device 6 via the recovery pipe 29. In addition, another pair of discharge nozzles 28a and inflow nozzles 30a, 3a are arranged by rotating one pair of discharge nozzles 27a and inflow nozzles 29a, 29b by approximately 180 °. 0b is arranged, the discharge nozzle 28a is connected to the liquid supply device 5 through the supply pipe 28, and the inflow nozzles 30a and 30b are connected to the liquid recovery device 6 through the recovery pipe 30. Have been. The liquid supply device 5 supplies a temperature-controlled liquid between the front end 4 A of the lens 4 and the wafer W through at least one of the supply pipes 21, 22, 27, 28. The liquid recovery device 6 recovers the liquid via at least one of the recovery tubes 23, 24, 29, and 30. Next, a method for supplying and recovering the liquid 7 will be described.
図 2において、 実線で示す矢印 2 5 Aの方向 (一 X方向) にウェハ W をステップ移動させる際には、 液体供給装置 5は、 供給管 2 1、 及び排 出ノズル 2 1 aを介してレンズ 4の先端部 4 Aとウェハ Wとの間に液体 7を供給する。 そして、 液体回収装置 6は、 回収管 2 3及び流入ノズル 2 3 a , 2 3 bを介してウェハ W上から液体 7を回収する。 このとき、 液体 7はウェハ W上を矢印 2 5 Bの方向 (一 X方向) に流れており、 ゥ ェハ Wとレンズ 4との間は液体 7により安定に満たされる。  In FIG. 2, when the wafer W is step-moved in the direction of the arrow 25 A (in the X direction) indicated by a solid line, the liquid supply device 5 is connected via the supply pipe 21 and the discharge nozzle 21 a. The liquid 7 is supplied between the tip 4 A of the lens 4 and the wafer W. Then, the liquid recovery device 6 recovers the liquid 7 from above the wafer W via the recovery pipe 23 and the inflow nozzles 23a and 23b. At this time, the liquid 7 flows on the wafer W in the direction of the arrow 25B (the direction X), and the space between the wafer W and the lens 4 is stably filled with the liquid 7.
一方、 2点鎖線で示す矢印 2 6 Aの方向 (+ X方向) にウェハ Wをス テツプ移動させる際には、 液体供給装置 5は供給管 2 2、 及び排出ノズ ル 2 2 aを使用してレンズ 4の先端部 4 Aとウェハ Wとの間に液体 7を 供給し、 液体回収装置 6は回収管 2 4及び流入ノズル 2 4 a, 2 4 bを 使用して液体 7を回収する。 このとき、 液体 7はウェハ W上を矢印 2 6 Bの方向 (+ X方向) に流れており、 ウェハ Wとレンズ 4との間は液体 7により満たされる。 このように、 本例の投影露光装置では、 X方向に 互いに反転した 2対の排出ノズルと流入ノズルとを設けているため、 ゥ ェハ Wを + X方向、 又は— X方向のどちらに移動する場合にも、 ウェハ Wとレンズ 4との間を液体 7により安定に満たし続けることができる。  On the other hand, when stepping the wafer W in the direction of the arrow 26 A (+ X direction) indicated by the two-dot chain line, the liquid supply device 5 uses the supply pipe 22 and the discharge nozzle 22 a. The liquid 7 is supplied between the tip 4A of the lens 4 and the wafer W, and the liquid recovery device 6 recovers the liquid 7 using the recovery pipe 24 and the inflow nozzles 24a and 24b. At this time, the liquid 7 flows on the wafer W in the direction of arrow 26 B (+ X direction), and the space between the wafer W and the lens 4 is filled with the liquid 7. As described above, in the projection exposure apparatus of the present example, since the two pairs of discharge nozzles and inflow nozzles that are mutually inverted in the X direction are provided, the wafer W is moved in either the + X direction or the −X direction. In this case, the space between the wafer W and the lens 4 can be stably filled with the liquid 7.
また、 液体 7がウェハ W上を流れるため、 ウェハ W上に異物 (レジス 卜からの飛散粒子を含む) が付着している場合であっても、 その異物を 液体 7により流し去ることができるという利点がある。 また、 液体 7は 液体供給装置 5により所定の温度に調整されているため、 ウェハ W表面 の温度調整が行われて、 露光の際に生じる熱によるウェハの熱膨張によ る重ね合わせ精度等の低下を防ぐことができる。 従って、 E G A (ェン ハンスト ' グローバル · ァライメント) 方式のァライメントのように、 ァライメントと露光とに時間差のある場合であっても、 ウェハの熱膨張 により重ね合わせ精度が低下してしまうことを防ぐことができる。 また、 本例の投影露光装置では、 ウェハ Wを移動させる方向と同じ方向に液体 7が流れているため、 異物や熱を吸収した液体をレンズ 4の先端部 4 A の直下の露光領域上に滞留させることなく回収することができる。 Further, since the liquid 7 flows on the wafer W, even if foreign matter (including scattered particles from the resist) adheres to the wafer W, the foreign matter can be washed away by the liquid 7. There are advantages. In addition, since the liquid 7 is adjusted to a predetermined temperature by the liquid supply device 5, the temperature of the surface of the wafer W is adjusted, and the overlay accuracy and the like due to the thermal expansion of the wafer due to heat generated during exposure are adjusted. Drop can be prevented. Therefore, even if there is a time lag between the alignment and the exposure as in the EGA (Enhanced's Global Alignment) method, the thermal expansion of the wafer This can prevent the overlay accuracy from being reduced. Further, in the projection exposure apparatus of this example, since the liquid 7 flows in the same direction as the direction in which the wafer W is moved, the foreign matter or the liquid that has absorbed heat is deposited on the exposure area immediately below the tip 4 A of the lens 4. It can be collected without stagnation.
また、 ウェハ Wを Y方向にステップ移動させる際には Y方向から液体 7の供給及び回収を行う。  When the wafer W is moved stepwise in the Y direction, the liquid 7 is supplied and recovered from the Y direction.
即ち、 図 3において実線で示す矢印 3 1 Aの方向 (― Y方向) にゥェ ハをステップ移動させる際には、 液体供給装置 5は供給管 2 7、 排出ノ ズル 2 7 aを介して液体を供給し、 液体回収装置 6は回収管 2 9及び流 入ノズル 2 9 a , 2 9 bを使用して液体の回収を行ない、 液体はレンズ 4の先端部 4 Aの直下の露光領域上を矢印 3 1 Bの方向 (― Y方向) に 流れる。 また、 ウェハを + Y方向にステップ移動させる際には、 供給管 2 8、 排出ノズル 2 8 a、 回収管 3 0及び流入ノズル 3 0 a , 3 0 bを 使用して液体の供給及び回収が行われ、 液体は先端部 4 Aの直下の露光 領域上を + Y方向に流れる。 これにより、 ウェハ Wを X方向に移動する 場合と同様に、 ウェハ Wを + Y方向、 又は一 Y方向のどちらに移動する 場合であっても、 ウェハ Wとレンズ 4の先端部 4 Aとの間を液体 7によ り満たすことができる。  That is, when the wafer is step-moved in the direction of the arrow 31 A (-Y direction) indicated by the solid line in FIG. 3, the liquid supply device 5 is connected via the supply pipe 27 and the discharge nozzle 27a. The liquid is supplied, and the liquid recovery unit 6 recovers the liquid using the recovery pipe 29 and the inlet nozzles 29a and 29b, and the liquid is collected on the exposure area immediately below the tip 4A of the lens 4. Flows in the direction of arrow 31B (-Y direction). When the wafer is stepped in the + Y direction, liquid supply and recovery are performed using the supply pipe 28, the discharge nozzle 28a, the recovery pipe 30, and the inflow nozzles 30a, 30b. The liquid flows in the + Y direction on the exposure area just below the tip 4A. As a result, similarly to the case where the wafer W is moved in the X direction, whether the wafer W is moved in the + Y direction or the one Y direction, the position of the wafer W and the tip 4A of the lens 4 is The space can be filled with liquid 7.
なお、 X方向、 又は Y方向から液体 7の供給及び回収を行うノズルだ けでなく、 例えば斜めの方向から液体 7の供給及び回収を行うためのノ ズルを設けてもよい。  In addition, not only a nozzle for supplying and recovering the liquid 7 from the X direction or the Y direction, but also a nozzle for supplying and recovering the liquid 7 from an oblique direction may be provided.
次に、 液体 7の供給量、 及び回収量の制御方法について説明する。 図 4は、 投影光学系 P Lのレンズ 4とウェハ Wとの間への液体 7の供 給及び回収の様子を示し、 この図 4において、 ウェハ Wは矢印 2 5 Aの 方向 (― X方向) に移動しており、 排出ノズル 2 1 aより供給された液 体 7は、 矢印 2 5 Bの方向 (― X方向) に流れ、 流入ノズル 2 3 a , 2 3 bにより回収される。 レンズ 4とウェハ Wとの間に存在する液体 7の 量をゥェ八 Wの移動中でも一定に保っため、 本例では液体 7の供給量 V i (m3 / s ) と回収量 V o (m3 / s ) とを等しくし、 また、 XYス テ一ジ 1 0 (ウェハ W) の移動速度 Vに比例するように液体 7の供給量Next, a method of controlling the supply amount and the recovery amount of the liquid 7 will be described. FIG. 4 shows how the liquid 7 is supplied and recovered between the lens 4 of the projection optical system PL and the wafer W. In FIG. 4, the wafer W is positioned in the direction of the arrow 25 A (−X direction). The liquid 7 supplied from the discharge nozzle 21a flows in the direction of the arrow 25B (-X direction), and flows into the inlet nozzles 23a and 2b. Recovered by 3b. In this example, the supply amount V i (m 3 / s) of the liquid 7 and the collection amount V o ( m 3 / s) and supply amount of liquid 7 in proportion to the moving speed V of XY stage 10 (wafer W).
V i、 及び回収量 V oを調整する。 即ち、 主制御系 14は液体 7の供 量 V i、 及び回収量 V oを、 以下の式により決定する。 Adjust V i and recovery volume V o. That is, the main control system 14 determines the supply amount Vi and the recovery amount Vo of the liquid 7 by the following equations.
V i =V o=D - v - d (3)  V i = V o = D-v-d (3)
ここで、 図 1に示すように Dはレンズ 4の先端部の直径 (m) 、 Vは X Yステージ 1 0の移動速度 (mZs ) 、 dは投影光学系 P Lの作動距 離 (ワーキング 'ディスタンス) (m) である。 XYステージ 1 0をス テツプ移動するときの速度 Vは、 主制御系 1 4により設定されるもので あり、 D及び dは予め入力されているため、 (3) 式に基づいて液体 7 の供給量 V i、 及び回収量 Voを調整することで、 図 4のレンズ 4とゥ ェハ Wとの間には液体 7が常時満たされる。  Here, as shown in Fig. 1, D is the diameter of the tip of the lens 4 (m), V is the moving speed of the XY stage 10 (mZs), and d is the working distance of the projection optical system PL (working distance). (M). The speed V during the step movement of the XY stage 10 is set by the main control system 14. Since D and d are input in advance, the supply of the liquid 7 is performed based on the equation (3). By adjusting the volume Vi and the recovery volume Vo, the space between the lens 4 and the wafer W in FIG.
なお、 投影光学系 P Lの作動距離 dは、 投影光学系 P Lとウェハ Wと の間に液体 7を安定して存在させるためには、 できるだけ狭くすること が望ましい。 しかしながら、 作動距離 dが小さ過ぎるとウェハ Wの表面 がレンズ 4に接触する恐れがあるため、 或る程度の余裕を持つ必要があ る。 そこで、 作動距離 dは、 一例として 2mm程度に設定される。 この ように作動距離 dは短いため、 液体 7の露光光に対する透過率が或る程 度低くとも、 露光光の吸収量は極めて少ない。  The working distance d of the projection optical system PL is desirably as small as possible in order to allow the liquid 7 to be stably present between the projection optical system PL and the wafer W. However, if the working distance d is too small, the surface of the wafer W may come into contact with the lens 4, so that it is necessary to have a certain margin. Therefore, the working distance d is set to about 2 mm as an example. As described above, since the working distance d is short, the absorption amount of the exposure light is extremely small even if the transmittance of the liquid 7 for the exposure light is somewhat low.
次に、 本発明の第 2の実施の形態につき図 5〜図 7を参照して説明す る。 本例は、 本発明をステップ · アンド · スキャン方式の投影露光装置 で露光する場合に適用したものである。  Next, a second embodiment of the present invention will be described with reference to FIGS. In this embodiment, the present invention is applied to a case where exposure is performed by a step-and-scan type projection exposure apparatus.
図 5は、 本例の投影露光装置の投影光学系 P L Aの下部、 液体供給装 置 5、 及び液体回収装置 6等を示す正面図であり、 この図 4に対応する 部分に同一符号を付して示す図 5において、 投影光学系 P L Aの鏡筒 3 Aの最下端のレンズ 3 2は、 先端部 3 2 Aが走査露光に必要な部分だけ を残して Y方向 (非走査方向) に細長い矩形に削られている。 走査露光 時には、 先端部 3 2 Aの直下の矩形の露光領域にレチクルの一部のパ夕 ーン像が投影され、 投影光学系 P L Aに対して、 レチクル (不図示) が — X方向 (又は + X方向) に速度 Vで移動するのに同期して、 X Yステ —ジ 1 0を介してウェハ Wが + X方向 (又は一 X方向) に速度 ]3 · VFIG. 5 is a front view showing the lower part of the projection optical system PLA of the projection exposure apparatus of this example, the liquid supply device 5, the liquid recovery device 6, and the like, and corresponds to FIG. In FIG. 5 in which the same reference numerals are assigned to the portions, the lowermost lens 32 of the lens barrel 3 A of the projection optical system PLA has a distal end portion 32 A in the Y direction except for a portion necessary for scanning exposure ( (In the non-scanning direction). At the time of scanning exposure, a pattern image of a part of the reticle is projected onto a rectangular exposure area immediately below the tip 32A, and the reticle (not shown) is moved in the X direction (or The wafer W moves in the + X direction (or one X direction) via the XY stage 10 in synchronization with the movement at the speed V in the + X direction).
( /3は投影倍率) で移動する。 そして、 1つのショット領域への露光終 了後に、 ウェハ Wのステツビングによって次のショット領域が走査開始 位置に移動し、 以下ステップ · アンド · スキャン方式で各ショット領域 への露光が順次行われる。 (/ 3 is the projection magnification). After the exposure of one shot area is completed, the next shot area is moved to the scanning start position by the stepping of the wafer W, and the exposure of each shot area is sequentially performed by the step-and-scan method.
本例においても走査露光中は液浸法の適用によって、 レンズ 3 2とゥ ェ八 Wの表面との間に液体 7が満たされる。 液体 7の供給及び回収はそ れぞれ液体供給装置 5及び液体回収装置 6によって行われる。  Also in this example, the liquid 7 is filled between the lens 32 and the surface of the wafer W by applying the liquid immersion method during the scanning exposure. The supply and recovery of the liquid 7 are performed by the liquid supply device 5 and the liquid recovery device 6, respectively.
図 6は、 投影光学系 P L Aのレンズ 3 2の先端部 3 2 Aと液体 7を X 方向に供給、 回収するための排出ノズル及び流入ノズルとの位置関係を 示し、 この図 6において、 レンズ 3 2の先端部 3 2 Aの形状は Y方向に 細長い矩形になっており、 投影光学系 P L Aのレンズ 3 2の先端部 3 2 Aを X方向に挟むように + X方向側に 3個の排出ノズル 2 1 a〜2 1 c が配置され、 一 X方向側に 2個の流入ノズル 2 3 a, 2 3 bが配置され ている。  FIG. 6 shows the positional relationship between the distal end 32 A of the lens 32 of the projection optical system PLA and the discharge nozzle and the inflow nozzle for supplying and recovering the liquid 7 in the X direction. The shape of the tip 3 2 A of 2 is a long and narrow rectangle in the Y direction, and + three discharges to the X direction side so that the tip 32 A of the lens 32 of the projection optical system PLA is sandwiched in the X direction. Nozzles 21a to 21c are arranged, and two inflow nozzles 23a and 23b are arranged on one X direction side.
そして、 排出ノズル 2 1 a〜2 1 cは供給管 2 1を介して液体供給装 置 5に接続され、 流入ノズル 2 3 a, 2 3 bは回収管 2 3を介して液体 回収装置 6に接続されている。 また、 排出ノズル 2 1 a〜2 1 cと流入 ノズル 2 3 a , 2 3 bとをほぼ 1 8 0 ° 回転した配置に、 排出ノズル 2 2 a〜2 2 cと流入ノズル 2 4 a, 2 4 bとを配置している。 排出ノズ ル 2 1 a〜2 1 cと流入ノズル 24 a, 24 bとは Y方向に交互に配列 され、 排出ノズル 22 a〜22 cと流入ノズル 23 a, 23 bとは Y方 向に交互に配列され、 排出ノズル 22 a〜22 cは供給管 22を介して 液体供給装置 5に接続され、 流入ノズル 24 a, 24 bは回収管 24を 介して液体回収装置 6に接続されている。 Then, the discharge nozzles 21a to 21c are connected to the liquid supply device 5 through the supply pipe 21, and the inflow nozzles 23a and 23b are connected to the liquid recovery device 6 through the recovery pipe 23. It is connected. Also, the discharge nozzles 22a to 22c and the inflow nozzles 23a and 23b are rotated by approximately 180 degrees, and the discharge nozzles 22a to 22c and the inflow nozzles 24a and 2c are arranged. 4b and are arranged. Discharge noise 21a to 21c and inflow nozzles 24a and 24b are alternately arranged in the Y direction, and discharge nozzles 22a to 22c and inflow nozzles 23a and 23b are alternately arranged in the Y direction. The discharge nozzles 22 a to 22 c are connected to the liquid supply device 5 via the supply pipe 22, and the inflow nozzles 24 a and 24 b are connected to the liquid recovery device 6 via the recovery pipe 24.
そして、 実線の矢印で示す走査方向 (一 X方向) にウェハ Wを移動さ せて走査露光を行う場合には、 供給管 2 1、 排出ノズル 2 1 a〜2 1 c、 回収管 23、 及び流入ノズル 23 a, 23 bを使用して液体供給装置 5 及び液体回収装置 6によって液体 7の供給及び回収を行い、 レンズ 32 とウェハ Wとの間を満たすように一 X方向に液体 7を流す。 また、 2点 鎖線の矢印で示す方向 (+X方向) にウェハ Wを移動させて走查露光を 行う場合には、 供給管 22、 排出ノズル 22 a〜22 c、 回収管 24、 及び流入ノズル 24 a, 24 bを使用して液体 7の供給及び回収を行い、 レンズ 32とウェハ Wとの間を満たすように + X方向に液体 7を流す。 走查方向に応じて液体 7を流す方向を切り換えることにより、 +X方向、 又は一 X方向のどちらの方向にウェハ Wを走査する場合にも、 レンズ 3 2の先端部 32 Aとウェハ Wとの間を液体 7により満たすことができ、 高い解像度及び広い焦点深度が得られる。  When scanning exposure is performed by moving the wafer W in the scanning direction (the X direction) indicated by the solid arrow, the supply pipe 21, the discharge nozzles 21 a to 21 c, the recovery pipe 23, and The liquid 7 is supplied and recovered by the liquid supply device 5 and the liquid recovery device 6 using the inflow nozzles 23a and 23b, and the liquid 7 flows in the X direction so as to fill the space between the lens 32 and the wafer W. . When scanning exposure is performed by moving the wafer W in the direction indicated by the two-dot chain arrow (+ X direction), the supply pipe 22, the discharge nozzles 22a to 22c, the recovery pipe 24, and the inflow nozzle The liquid 7 is supplied and recovered using 24a and 24b, and the liquid 7 flows in the + X direction so as to fill the space between the lens 32 and the wafer W. By switching the direction in which the liquid 7 flows in accordance with the running direction, the tip 32 A of the lens 32 and the wafer W can be scanned in either the + X direction or the 1X direction. Can be filled with the liquid 7, and a high resolution and a wide depth of focus can be obtained.
また、 液体 7の供給量 V i (m3 / s) 、 及び回収量 Vo (m3 / s ) は、 以下の式により決定する。 The supply amount Vi (m 3 / s) of the liquid 7 and the recovery amount Vo (m 3 / s) are determined by the following equations.
V i =Vo = D sv - v - d (4)  V i = Vo = D sv-v-d (4)
ここで、 DSYはレンズ 32の先端部 32 Aの X方向の長さ (m) であ る。 これによつて走査露光中においてもレンズ 32とウェハ Wとの間を 液体 7により安定に満たすことができる。 Here, D SY is the length (m) of the tip 32A of the lens 32 in the X direction. This allows the liquid 7 to stably fill the space between the lens 32 and the wafer W even during scanning exposure.
なお、 ノズルの数や形状は特に限定されるものでなく、 例えば先端部 32 Aの長辺について 2対のノズルで液体 7の供給又は回収を行うよう にしてもよい。 なお、 この場合には、 + X方向、 又は一X方向のどちら の方向からも液体 7の供給及び回収を行うことができるようにするため, 排出ノズルと流入ノズルとを上下に並べて配置してもよい。 The number and shape of the nozzles are not particularly limited. For example, supply or recovery of the liquid 7 is performed using two pairs of nozzles on the long side of the tip 32A. It may be. In this case, in order to be able to supply and recover the liquid 7 from either the + X direction or the 1X direction, the discharge nozzle and the inflow nozzle are arranged vertically. Is also good.
また、 ウェハ Wを Y方向にステップ移動させる際には、 第 1の実施の 形態と同様に、 Y方向から液体 7の供給及び回収を行う。  When the wafer W is moved stepwise in the Y direction, the supply and recovery of the liquid 7 are performed from the Y direction, as in the first embodiment.
図 7は、 投影光学系 P L Aのレンズ 3 2の先端部 3 2 Aと Y方向用の 排出ノズル及び流入ノズルとの位置関係を示し、 この図 7において、 ゥ ェハを走査方向に直交する非走查方向 (一 Y方向) にステップ移動させ る場合には、 Y方向に配列された排出ノズル 2 7 a、 及び流入ノズル 2 9 a , 2 9 bを使用して液体 7の供給及び回収を行い、 また、 ウェハを + Y方向にステツプ移動させる場合には、 Y方向に配列された排出ノズ ル 2 8 a、 及び流入ノズル 3 0 a , 3 0 bを使用して液体 7の供給及び 回収を行う。 また、 液体 7の供給量 V i (m 3 Z s ) 、 及び回収量 V o (m 3 Z s ) は、 以下の式により決定する。 FIG. 7 shows the positional relationship between the distal end 32 A of the lens 32 of the projection optical system PLA and the discharge nozzle and the inflow nozzle for the Y direction. In FIG. 7, the wafer is not perpendicular to the scanning direction. When stepping in the running direction (one Y direction), supply and recovery of liquid 7 is performed using discharge nozzles 27a and inflow nozzles 29a and 29b arranged in the Y direction. When the wafer is moved stepwise in the + Y direction, the supply and recovery of the liquid 7 is performed using the discharge nozzles 28a and the inflow nozzles 30a and 30b arranged in the Y direction. I do. Further, the supply amount V i (m 3 Z s) of the liquid 7 and the recovery amount V o (m 3 Z s) are determined by the following equations.
V i = V o = D s x · V · d ( 5 )  V i = V o = D s xV d (5)
ここで、 D s xはレンズ 3 2の先端部 3 2 Aの Y方向の長さ (m) であ る。 第 1の実施例と同様に、 Y方向にステップ移動させる際にもウェハ Wの移動速度 Vに応じて液体 7の供給量を調整することにより、 レンズ 3 2とウェハ Wとの間を液体 7により満たし続けることができる。 Here, D sx is the length (m) of the tip 32 A of the lens 32 in the Y direction. As in the first embodiment, the liquid 7 is supplied between the lens 32 and the wafer W by adjusting the supply amount of the liquid 7 in accordance with the moving speed V of the wafer W during the step movement in the Y direction. Can be kept satisfied.
以上のようにウェハ Wを移動させる際には、 その移動方向に応じた方 向に液体を流すことにより、 ウェハ Wと投影光学系 P Lの先端部との間 を液体 7により満たし続けることができる。  When the wafer W is moved as described above, by flowing the liquid in a direction corresponding to the moving direction, the space between the wafer W and the tip of the projection optical system PL can be continuously filled with the liquid 7. .
なお、 上記の実施の形態において液体 7として使用される液体は特に 純水に限定されるものではなく、 露光光に対する透過性があってできる だけ屈折率が高く、 また、 投影光学系やウェハ表面に塗布されているフ オトレジストに対して安定なもの (例えばセダ一油等) を使用すること ができる。 The liquid used as the liquid 7 in the above embodiment is not particularly limited to pure water, but has a high refractive index as much as possible because it has transparency to exposure light. Use a material that is stable against the photoresist applied to the surface (for example, Seda Oil) Can be.
また、 液体 7としては、 化学的に安定で、 即ち露光光に対する透過率 が高く安全な液体であるフッ素系不活性液体を使用してもよい。 このフ ッ素系不活性液体としては、 例えばフロリナ一ト (米国スリ一ェム社の 商品名) が使用できる。 このフッ素系不活性液体は冷却効果の点でも優 れている。  Further, as the liquid 7, a fluorine-based inert liquid which is chemically stable, that is, a liquid having a high transmittance to exposure light and a safe liquid may be used. As this fluorine-based inert liquid, for example, Florinato (trade name of Suriem Co., USA) can be used. This fluorine-based inert liquid is also superior in terms of the cooling effect.
また、 前述の各実施の形態で回収された液体 7を再利用するようにし てもよく、 この場合は回収された液体 7から不純物を除去するフィル夕 を液体回収装置、 又は回収管等に設けておくことが望ましい。  In addition, the liquid 7 collected in each of the above-described embodiments may be reused. In this case, a filter for removing impurities from the collected liquid 7 is provided in the liquid collection device or the collection pipe. It is desirable to keep.
さらに、 液体 7を流す範囲はレチクルのパ夕一ン像の投影領域 (露光 光の照射領域) の全域を覆うように設定されていればよく、 その大きさ は任意でよいが、 流速、 流量等を制御する上で、 前述の各実施の形態の ように露光領域よりも少し大きくしてその範囲をできる限り小さくして おくことが望ましい。 なお、 供給される液体を流入ノズルで全て回収す ることは困難であるため、 Zステージ上から液体が溢れないように、 例 えばウェハを囲んで隔壁を形成し、 その隔壁内の液体を回収する配管を 更に設けておくことが望ましい。  Furthermore, the range in which the liquid 7 flows may be set so as to cover the entire projection area (irradiation area of the exposure light) of the reticle's projection image. In controlling such factors, it is desirable that the exposure area be slightly larger than the exposure area and the area be as small as possible as in the above-described embodiments. Since it is difficult to collect all of the supplied liquid using the inflow nozzle, a partition is formed around the wafer, for example, so that the liquid does not overflow from the Z stage, and the liquid in the partition is recovered. It is desirable to provide additional piping.
また、 前述の各実施の形態ではウェハ W ( X Yステージ 1 0 ) の移動 方向に沿って液体 7を流すものとしたが、 液体 7を流す方向はその移動 方向に一致している必要はない。 即ち、 液体 7を流す方向はその移動方 向と交差していてもよく、 例えばウェハ Wを + X方向に移動するときは, 液体 7の一 X方向の速度成分が零、 ないしは所定の許容値以下となる方 向に沿って液体 7を流せばよい。 これにより、 ステップ · アンド · リピ 一ト方式、 又はステツプ · アンド · スキャン方式 (共にステップ ' アン ド ·スティツチ方式を含む) でウェハを露光するときに、 その移動方向 が短時間 (例えば数百 m s程度) で頻繁に変化しても、 それに追従して 流体を流す方向を制御し、 投影光学系とウェハとの間に液体を満たして おくことができる。 また、 ステップ · アンド · スキャン方式の投影露光 装置では、 ショッ ト領域間でのウェハの移動において X Yステージの走 查方向及び非走査方向の速度成分が共に零とならないように、 即ち 1つ のショッ ト領域間の走査露光終了後であって X Yステージの減速中 (走 查方向の速度成分が零となる前) に X Yステージのステッピング (非走 査方向への移動) を開始し、 そのステッピングが終了する前 (非走査方 向の速度成分が零となる前であって、 例えば X Yステージの減速中) に、 次のショッ ト領域を走査露光するために X Yステージの加速を開始する ように X Yステージの移動を制御する。 このような場合でも、 ウェハの 移動方向に応じて液体を流す方向を制御し、 投影光学系とウェハとの間 に液体を満たしておくことができる。 Further, in each of the above-described embodiments, the liquid 7 flows along the moving direction of the wafer W (XY stage 10). However, the flowing direction of the liquid 7 does not need to match the moving direction. That is, the direction in which the liquid 7 flows may intersect with the direction of movement. For example, when the wafer W is moved in the + X direction, the velocity component in the one X direction of the liquid 7 is zero or a predetermined allowable value. The liquid 7 may be allowed to flow in the following directions. Thus, when exposing a wafer by the step-and-repeat method or the step-and-scan method (both include the step-and-stick method), the moving direction is short (for example, several hundred ms). Change) and follow it By controlling the direction in which the fluid flows, the liquid can be filled between the projection optical system and the wafer. In the step-and-scan projection exposure apparatus, the velocity components in the scanning direction and the non-scanning direction of the XY stage do not become zero in the movement of the wafer between the shot areas, that is, one shot exposure apparatus. After the scanning exposure between the scan areas is completed, the XY stage starts stepping (moving in the non-scanning direction) while the XY stage is decelerating (before the velocity component in the scanning direction becomes zero), and the stepping is performed. Before terminating (before the velocity component in the non-scanning direction becomes zero, for example, during deceleration of the XY stage), the XY stage is started to accelerate in order to scan and expose the next shot area. Control the movement of the stage. Even in such a case, the direction in which the liquid flows can be controlled according to the moving direction of the wafer, and the space between the projection optical system and the wafer can be filled with the liquid.
なお、 本例の投影露光装置の用途としては半導体製造用の投影露光装 置に限定されることなく、 例えば、 角型のガラスプレートに液晶表示素 子パターンを露光する液晶用の投影露光装置や、 薄膜磁気ヘッドを製造 するための投影露光装置にも広く適用できる。  The application of the projection exposure apparatus of the present embodiment is not limited to the projection exposure apparatus for semiconductor manufacturing. For example, a projection exposure apparatus for liquid crystal for exposing a liquid crystal display element pattern to a square glass plate, It can be widely applied to a projection exposure apparatus for manufacturing a thin film magnetic head.
また、 半導体素子等を製造するデバイス製造用の露光装置で使用する レチクル又はマスクを、 例えば遠紫外光若しくは真空紫外光を用いる露 光装置で製造することがあり、 前述の各実施の形態の投影露光装置はレ チクル又はマスクを製造するフォ卜リソグラフイエ程においても好適に 使用することができる。  Further, a reticle or a mask used in an exposure apparatus for manufacturing a device for manufacturing a semiconductor element or the like may be manufactured by an exposure apparatus using, for example, far ultraviolet light or vacuum ultraviolet light. The exposure apparatus can be suitably used in a photolithographic process for producing a reticle or a mask.
さらに、 露光用照明光としての D F B半導体レーザ又はファイバレー ザから発振される赤外域又は可視域の単一波長レーザを、 例えばェルビ ゥム (E r ) (又はエルビウムとイッテルビウム (Y b ) の両方) がド ープされたファイバ一アンプで増幅し、 かつ非線形光学結晶を用いて紫 外光に波長変換した高調波を用いてもよい。 また投影光学系 P Lは屈折系、 反射系及び反射屈折系の何れでもよい c 反射屈折系としては、 例えば米国特許第 5 7 8 8 2 2 9号に開示されて いるように、 複数の屈折光学素子と 2つの反射光学素子 (少なくとも一 方は凹面鏡) とを、 折り曲げられることなく一直線に延びる光軸上に配 置した光学系を用いることができる。 この米国特許に開示された反射屈 折系を有する露光装置では、 ゥェ八に最も近い、 即ち液体と接触する光 学素子は反射光学素子となる。 なお、 本国際出願で指定した指定国、 又 は選択した選択国の国内法令の許す限りにおいてこの米国特許の開示を 援用して本文の記載の一部とする。 In addition, a single-wavelength laser in the infrared or visible range oscillated from a DFB semiconductor laser or fiber laser as exposure illumination light is used, for example, by using Erbium (Er) (or both Erbium and Ytterbium (Yb)). ) May be amplified by a fiber-amplifier with a doping, and a harmonic converted to a wavelength of ultraviolet light using a nonlinear optical crystal may be used. The projection optical system PL is a refractive system, as the reflection system and either good c catadioptric system of the catadioptric system, as for example disclosed in U.S. Patent No. 5 7 8 8 2 2 9 items, a plurality of refractive optical An optical system in which the element and two reflecting optical elements (at least one of which is a concave mirror) are arranged on an optical axis extending straight without being bent can be used. In the exposure apparatus having a reflective refraction system disclosed in this US patent, the optical element closest to the lens, that is, the optical element that comes into contact with the liquid is a reflective optical element. The disclosure of this U.S. patent is incorporated herein by reference, to the extent permitted by the laws designated in this international application or the laws of the selected elected country.
また、 複数のレンズから構成される照明光学系、 投影光学系を露光装 置本体に組み込み光学調整をすると共に、 多数の機械部品からなるレチ クルステージやウェハステージを露光装置本体に取り付けて配線や配管 を接続し、 液体の供給及び回収を行うための配管 (供給管、 排出ノズル 等) を設置して、 更に総合調整 (電気調整、 動作確認等) をすることに より本実施の形態の投影露光装置を製造することができる。 なお、 投影 露光装置の製造は温度及びクリーン度等が管理されたクリーンルームで 行うことが望ましい。  In addition, an illumination optical system and a projection optical system composed of multiple lenses are incorporated into the exposure apparatus main body to perform optical adjustment, and a reticle stage and wafer stage consisting of many mechanical parts are attached to the exposure apparatus main body to perform wiring and By connecting pipes, installing pipes (supply pipes, discharge nozzles, etc.) for supplying and recovering liquid, and performing comprehensive adjustments (electrical adjustment, operation confirmation, etc.), the projection of this embodiment is achieved. An exposure apparatus can be manufactured. It is desirable to manufacture the projection exposure apparatus in a clean room where the temperature, cleanliness, etc. are controlled.
そして、 半導体デバイスは、 デバイスの機能 ·性能設計を行うステツ プ、 このステップに基づいたレチクルを製造するステップ、 シリコン材 料からウェハを制作するステップ、 前述した実施の形態の投影露光装置 によりレチクルのパ夕一ンをウェハに露光するステップ、 デバイス組み 立てステップ (ダイシング工程、 ボンディング工程、 パッケージ工程を 含む) 、 検査ステップ等を経て製造される。  The semiconductor device includes a step of designing the function and performance of the device, a step of manufacturing a reticle based on this step, a step of manufacturing a wafer from a silicon material, and a step of manufacturing a reticle by the projection exposure apparatus of the above-described embodiment. It is manufactured through a step of exposing a wafer to a wafer, a step of assembling a device (including a dicing process, a bonding process, and a package process), and an inspection step.
なお、 本発明は上述の実施の形態に限定されず、 本発明の要旨を逸脱 しない範囲で種々の構成を取り得る。 更に、 明細書、 特許請求の範囲、 図面、 及び要約を含む、 1 9 9 8年 3月 2 6日付提出の日本国特許出願 第 1 0— 7 9 2 6 3号の全ての開示内容は、 そっくりそのまま引用して ここに組み込まれている。 産業上の利用の可能性 It should be noted that the present invention is not limited to the above-described embodiment, and can take various configurations without departing from the gist of the present invention. Further, including the specification, claims, drawings, and abstract, a Japanese patent application filed on March 26, 1998 The entire disclosure of No. 10—7 926 3 is hereby incorporated by reference in its entirety. Industrial applicability
本発明の第 1又は第 2の投影露光方法によれば、 液浸法を使用してい るため、 マスクのパターン像の焦点深度を空気中における焦点深度の約 n倍 (nは使用する液体の屈折率) に拡大でき、 微細なパターンを安定 に高い解像度で転写することができる。 従って、 高集積度の半導体デバ イス等を高い歩留りで量産できる。 また、 その基板を所定方向に沿って 移動させる際に、 その投影光学系のその基板側の光学素子の先端部とそ の基板の表面との間を満たすように、 その基板の移動方向に沿ってその 液体を流すため、 基板を移動させる際にも、 その投影光学系の先端部と その基板の表面との間はその液体により満たされて、 液浸法が使用でき る。 また、 その基板上に異物が付着している場合には、 その基板上に付 着している異物を流し去ることができ、 最終製品の歩留りの向上を図る ことができるという利点がある。  According to the first or second projection exposure method of the present invention, since the immersion method is used, the depth of focus of the pattern image of the mask is about n times the depth of focus in air (where n is the liquid used). (Refractive index), and a fine pattern can be stably transferred at a high resolution. Therefore, highly integrated semiconductor devices can be mass-produced at a high yield. When the substrate is moved along a predetermined direction, the projection optical system is moved along the moving direction of the substrate so as to fill the space between the tip of the optical element on the substrate side of the projection optical system and the surface of the substrate. Therefore, when the substrate is moved, the space between the tip of the projection optical system and the surface of the substrate is filled with the liquid, and the liquid immersion method can be used. Further, when foreign matter is attached to the substrate, the foreign matter attached to the substrate can be washed away, and there is an advantage that the yield of the final product can be improved.
次に、 本発明の第 1又は第 2の投影露光装置によれば、 本発明の第 1 又は第 2投影露光方法を実施することができる。 また、 その基板ステ一 ジの移動速度に応じてその液体の供給量、 及び回収量 (流量) を調整す る場合には、 そのステージの移動速度が変化しても投影光学系の先端部 と基板の表面との間に存在するその液体の量を一定に保つことができる <  Next, according to the first or second projection exposure apparatus of the present invention, the first or second projection exposure method of the present invention can be performed. In addition, when the supply amount and the recovery amount (flow rate) of the liquid are adjusted according to the moving speed of the substrate stage, even when the moving speed of the stage changes, the tip of the projection optical system is not affected. The amount of the liquid existing between the substrate and the surface can be kept constant <

Claims

請 求 の 範 囲 The scope of the claims
1 . 露光ビームでマスクを照明し、 前記マスクのパターンを投影光学系 を介して基板上に転写する投影露光方法において、 1. A projection exposure method for illuminating a mask with an exposure beam and transferring the pattern of the mask onto a substrate via a projection optical system,
前記基板を所定方向に沿って移動させる際に、 前記投影光学系の前記 基板側の光学素子の先端部と前記基板の表面との間を満たすように、 前 記基板の移動方向に沿つて所定の液体を流すことを特徴とする投影露光 方法。  When the substrate is moved along a predetermined direction, a predetermined distance is set along the moving direction of the substrate so as to fill a space between a tip portion of the optical element on the substrate side of the projection optical system and the surface of the substrate. Projection exposure method, characterized by flowing a liquid.
2 . 露光ビームでマスクを照明し、 前記マスクのパターンを投影光学系 を介して基板上に転写する投影露光装置において、  2. A projection exposure apparatus that illuminates a mask with an exposure beam and transfers a pattern of the mask onto a substrate via a projection optical system.
前記基板を保持して移動させる基板ステージと、 前記投影光学系の前 記基板側の光学素子の先端部と前記基板の表面との間を満たすように、 供給用の配管を介して所定方向に沿って所定の液体を供給する液体供給 装置と、 前記供給用の配管と共に前記所定方向に前記露光ビームの照射 領域を挟むように配置された排出用の配管を介して前記基板の表面から 前記液体を回収する液体回収装置と、 を有し、  A substrate stage for holding and moving the substrate, and in a predetermined direction via a supply pipe so as to fill a space between the tip of the optical element on the substrate side of the projection optical system and the surface of the substrate. A liquid supply device for supplying a predetermined liquid along the discharge pipe, and a discharge pipe arranged so as to sandwich the irradiation area of the exposure beam in the predetermined direction together with the supply pipe from the surface of the substrate to the liquid. And a liquid recovery device for recovering
前記基板ステージを駆動して前記基板を前記所定方向に沿って移動さ せる際に、 前記液体の供給及び回収を行うことを特徴とする投影露光装 置。  A projection exposure apparatus for supplying and recovering the liquid when the substrate stage is driven to move the substrate along the predetermined direction.
3 . 請求の範囲 2記載の投影露光装置であって、  3. The projection exposure apparatus according to claim 2, wherein
前記 1対の供給用の配管及び排出用の配管を実質的に 1 8 0 ° 回転し た配置の第 2の 1対の供給用の配管、 及び排出用の配管を設けたことを 特徴とする投影露光装置。  A second pair of supply pipes and a discharge pipe are provided, wherein the pair of supply pipes and the discharge pipes are substantially rotated by 180 °. Projection exposure equipment.
4 . 請求の範囲 2、 又は 3記載の投影露光装置であって、  4. The projection exposure apparatus according to claim 2 or 3, wherein
前記投影露光装置はマスクと基板とを前記投影光学系に対して同期移 動して露光を行う走査露光型であり、 前記所定方向は走査露光時の前記 基板の走査方向であることを特徴とする投影露光装置。 The projection exposure apparatus is of a scanning exposure type that performs exposure by synchronously moving a mask and a substrate with respect to the projection optical system, and the predetermined direction is the scanning exposure time. A projection exposure apparatus characterized by being in a scanning direction of a substrate.
5 . 請求の範囲 2、 3、 又は 4記載の投影露光装置であって、  5. The projection exposure apparatus according to claim 2, 3, or 4, wherein
前記所定方向に直交する方向に、 前記 1対の供給用の配管及び排出用 の配管に対応する配置で 1対、 又は互いに反転した 2対の供給用の配管、 及び排出用の配管を設けたことを特徴とする投影露光装置。  In a direction orthogonal to the predetermined direction, a pair of supply pipes and a pair of supply pipes and a pair of discharge pipes, which are inverted from each other, are provided in an arrangement corresponding to the pair of supply pipes and the discharge pipes. A projection exposure apparatus characterized by the above-mentioned.
6 . 請求の範囲 2〜 5の何れか一項記載の投影露光装置であって、 前記基板ステージの移動速度に応じて前記液体の供給量、 及び回収量 を調整する制御系を有することを特徴とする投影露光 置。  6. The projection exposure apparatus according to any one of claims 2 to 5, further comprising a control system that adjusts a supply amount and a recovery amount of the liquid according to a moving speed of the substrate stage. Projection exposure equipment.
7 . 請求の範囲 2〜 6の何れか一項記載の投影露光装置であって、 前記基板の表面に供給される前記液体は所定の温度に調整された純水、 又はフッ素系不活性液体であることを特徴とする投影露光装置。  7. The projection exposure apparatus according to any one of claims 2 to 6, wherein the liquid supplied to the surface of the substrate is pure water adjusted to a predetermined temperature, or a fluorine-based inert liquid. A projection exposure apparatus, comprising:
8 . 露光ビームをマスクに照射する照明系と、 前記マスクのパターンの 像を基板上に転写する投影光学系と、 前記基板を保持して移動させる基 板ステージと、 前記投影光学系の前記基板側の光学素子の先端部と前記 基板の表面との間を満たすように、 供給用の配管を介して所定方向に沿 つて所定の液体を供給する液体供給装置と、 前記供給用の配管と共に前 記所定方向に前記露光ビームの照射領域を挟むように配置された排出用 の配管を介して前記基板の表面から前記液体を回収する液体回収装置と を所定の位置関係で組み上げることを特徴とする投影露光装置の製造方 法。  8. An illumination system that irradiates an exposure beam onto the mask, a projection optical system that transfers an image of the pattern of the mask onto a substrate, a substrate stage that holds and moves the substrate, and the substrate of the projection optical system A liquid supply device that supplies a predetermined liquid along a predetermined direction via a supply pipe so as to fill a space between the tip of the optical element on the side and the surface of the substrate; A liquid collecting device for collecting the liquid from the surface of the substrate via a discharge pipe arranged so as to sandwich the irradiation region of the exposure beam in a predetermined direction, in a predetermined positional relationship. Manufacturing method of projection exposure equipment.
9 . 請求の範囲 1記載の投影露光方法を用いたデバイスの製造方法であ つて、 露光ビームでマスクを照明し、 前記マスクのパターンを投影光学 系を介して基板上に転写する露光工程を含み、 該露光工程において、 前 記基板を所定方向に沿って移動させる際に、 前記投影光学系の前記基板 側の光学素子の先端部と前記基板の表面との間を満たすように、 前記基 板の移動方向に沿って所定の液体を流すことを特徴とするデバイスの製 造方法。 9. A method for manufacturing a device using the projection exposure method according to claim 1, comprising an exposure step of illuminating a mask with an exposure beam and transferring a pattern of the mask onto a substrate via a projection optical system. In the exposing step, when the substrate is moved along a predetermined direction, the substrate is filled so as to fill a space between the tip of the optical element on the substrate side of the projection optical system and the surface of the substrate. Manufacturing a device characterized by flowing a predetermined liquid along a moving direction of the device. Construction method.
1 0 . 露光ビームでマスクを照明し、 投影光学系を介して前記露光ビ一 ムで基板を露光する投影露光方法において、  10. A projection exposure method for illuminating a mask with an exposure beam and exposing a substrate with the exposure beam via a projection optical system.
前記投影光学系と前記基板との間を満たすように液体を流すとともに、 前記基板の移動方向に応じて前記液体を流す方向を変化させることを特 徴とする投影露光方法。  A projection exposure method characterized by flowing a liquid so as to fill a space between the projection optical system and the substrate, and changing a flowing direction of the liquid in accordance with a moving direction of the substrate.
1 1 . 請求の範囲 1 0記載の投影露光方法であって、  11. The projection exposure method according to claim 10, wherein
前記液体の供給速度を前記基板の移動方向の第 1成分と、 該移動方向 に直交する第 2成分とに分けたとき、 前記第 1成分が前記基板の移動方 向と逆方向のときは所定の許容値以下の大きさとなるように前記液体を 流すことを特徴とする投影露光方法。  When the supply speed of the liquid is divided into a first component in the moving direction of the substrate and a second component orthogonal to the moving direction, a predetermined value is set when the first component is in a direction opposite to the moving direction of the substrate. A projection exposure method, wherein the liquid is caused to flow so as to have a size equal to or smaller than the allowable value.
1 2 . 請求の範囲 1 0記載の投影露光方法であって、  12. The projection exposure method according to claim 10, wherein
前記基板の移動方向にほぼ沿って同じ向きに前記液体を流すことを特 徴とする投影露光方法。  A projection exposure method characterized by flowing the liquid in the same direction substantially along the moving direction of the substrate.
1 3 . 請求の範囲 1 2記載の投影露光方法であって、  1 3. The projection exposure method according to claim 1, wherein
前記基板はステップ ' アンド · リピート方式又はステップ · アンド ' スキャン方式で露光され、 前記基板のステツピング方向にほぼ沿つて前 記液体を流すことを特徴とする投影露光方法。  A projection exposure method, wherein the substrate is exposed by a step-and-repeat method or a step-and-scan method, and the liquid is flowed substantially along a stepping direction of the substrate.
1 4 . 請求の範囲 1 2又は 1 3記載の投影露光方法であって、  14. The projection exposure method according to claim 12 or 13, wherein
前記露光ビームに対して前記マスクと前記基板とをそれぞれ相対移動 して、 前記露光ビームで前記基板を走査露光するとともに、 前記走査露 光中、 前記基板の走査方向にほぼ沿つて前記液体を流すことを特徴とす る投影露光方法。  The mask and the substrate are relatively moved with respect to the exposure beam, and the substrate is scanned and exposed with the exposure beam, and the liquid flows substantially along the scanning direction of the substrate during the scanning exposure. A projection exposure method characterized in that:
1 5 . 請求の範囲 1 0〜 1 4の何れか一項記載の投影露光方法であって. 前記基板の移動速度に応じて前記液体の流量を調整することを特徴と する投影露光方法。 15. The projection exposure method according to any one of claims 10 to 14, wherein the flow rate of the liquid is adjusted according to a moving speed of the substrate.
1 6 . 請求の範囲 1 0〜 1 5の何れか一項記載の投影露光方法を用いて、 デバイスパターンを基板上に転写する工程を有するリソグラフイエ程を 含むことを特徴とするデバィスの製造方法。 16. A device manufacturing method including a lithographic process including a step of transferring a device pattern onto a substrate by using the projection exposure method according to any one of claims 10 to 15. .
1 7 . 露光ビームでマスクを照明し、 投影光学系を介して前記露光ビー ムで基板上に転写する投影露光装置において、  17. A projection exposure apparatus that illuminates a mask with an exposure beam and transfers the image onto a substrate with the exposure beam via a projection optical system.
前記投影光学系と前記基板との間を満たすように液体を流すとともに, 前記基板の移動方向に応じて前記液体を流す方向を変化させる液体供給 装置を備えたことを特徴とする投影露光方法。  A projection exposure method, comprising: a liquid supply device configured to flow a liquid so as to fill a space between the projection optical system and the substrate, and to change a flowing direction of the liquid according to a moving direction of the substrate.
1 8 . 請求の範囲 1 7記載の投影露光装置であって、  18. The projection exposure apparatus according to claim 17, wherein
前記液体の供給速度を前記基板の移動方向の第 1成分と該移動方向に 直交する第 2成分とに分けたとき、 前記液体供給装置は、 前記第 1成分 が前記基板の移動方向と逆方向であるときは所定の許容値以下の大きさ となるように前記液体を流すことを特徴とする投影露光装置。  When the supply speed of the liquid is divided into a first component in the moving direction of the substrate and a second component orthogonal to the moving direction, the liquid supply device is configured such that the first component is in a direction opposite to the moving direction of the substrate. A projection exposure apparatus wherein the liquid is caused to flow so as to have a size equal to or smaller than a predetermined allowable value.
1 9 . 請求の範囲 1 8記載の投影露光装置であって、  19. The projection exposure apparatus according to claim 18, wherein:
前記基板はステップ ' アンド · リピート方式又はステップ ' アンド ' スキャン方式で露光され、 前記液体供給装置は、 前記基板のステツピン グ方向にほぼ沿って前記液体を流すことを特徴とする投影露光装置。  A projection exposure apparatus, wherein the substrate is exposed by a step-and-repeat method or a step-and-scan method, and wherein the liquid supply device flows the liquid substantially along a stepping direction of the substrate.
2 0 . 請求の範囲 1 7〜 1 9の何れか一項記載の投影露光装置であって、 前記露光ビームに対して前記マスクと前記基板とをそれぞれ相対移動 するステージ · システムを更に備え、 前記液体供給装置は、 前記基板の 走査露光中、 前記基板の移動方向にほぼ沿って前記液体を流すことを特 徴とする投影露光装置。 20. The projection exposure apparatus according to any one of claims 17 to 19, further comprising: a stage system configured to relatively move the mask and the substrate with respect to the exposure beam, respectively. A projection exposure apparatus, characterized in that the liquid supply device flows the liquid substantially along the moving direction of the substrate during scanning exposure of the substrate.
2 1 . 請求の範囲 1 7〜 2 0の何れか一項記載の投影露光装置であって. 前記投影光学系と前記基板との間に供給された液体を回収する液体回 収装置を更に備えることを特徴とする投影露光装置。  21. The projection exposure apparatus according to any one of claims 17 to 20, further comprising a liquid recovery device that recovers a liquid supplied between the projection optical system and the substrate. A projection exposure apparatus characterized by the above-mentioned.
2 2 . 請求の範囲 2 1記載の投影露光装置であって、 前記液体供給装置の供給口と前記液体回収装置の回収口とは前記露光 ビームの照射領域を挟んで配置されることを特徴とする投影露光装置。 22. The projection exposure apparatus according to claim 21, wherein: A projection exposure apparatus, wherein a supply port of the liquid supply device and a recovery port of the liquid recovery device are arranged with an irradiation area of the exposure beam interposed therebetween.
PCT/JP1999/001262 1998-03-26 1999-03-16 Projection exposure method and system WO1999049504A1 (en)

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