WO2005059977A1 - Stage apparatus, exposure apparatus, and exposure method - Google Patents

Stage apparatus, exposure apparatus, and exposure method Download PDF

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Publication number
WO2005059977A1
WO2005059977A1 PCT/JP2004/018788 JP2004018788W WO2005059977A1 WO 2005059977 A1 WO2005059977 A1 WO 2005059977A1 JP 2004018788 W JP2004018788 W JP 2004018788W WO 2005059977 A1 WO2005059977 A1 WO 2005059977A1
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WO
WIPO (PCT)
Prior art keywords
substrate
liquid
stage device
holder
stage
Prior art date
Application number
PCT/JP2004/018788
Other languages
French (fr)
Japanese (ja)
Inventor
Hiroaki Takaiwa
Nobutaka Magome
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to JP2005516329A priority Critical patent/JP4600286B2/en
Publication of WO2005059977A1 publication Critical patent/WO2005059977A1/en

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages

Definitions

  • the present invention relates to a stage apparatus having a holder for holding a substrate and a stage for supporting and moving the holder, an exposure apparatus having the stage apparatus, and an exposure method, and particularly to a projection optical system, a liquid, More particularly, the present invention relates to a stage device, an exposure apparatus, and an exposure method which are suitable for use when exposing a pattern image to a substrate via a substrate. Also, the present application
  • Semiconductor devices and liquid crystal display devices are manufactured by a so-called photolithography technique in which a pattern formed on a mask is transferred onto a photosensitive substrate.
  • An exposure apparatus used in the photolithography process has a mask stage for supporting a mask and a substrate stage for supporting a substrate.
  • the mask stage and the substrate stage are sequentially moved, and a projection optical system is used to project the pattern of the mask. Transfer to the substrate via
  • further improvement in the resolution of the projection optical system has been desired in order to cope with higher integration of device patterns.
  • the resolution of the projection optical system increases as the exposure wavelength used decreases and as the numerical aperture of the projection optical system increases. For this reason, the exposure wavelength used in the exposure apparatus is becoming shorter year by year, and the numerical aperture of the projection optical system is also increasing.
  • the mainstream exposure wavelength is 248 nm for KrF excimer laser, and 193 nm for ArF excimer laser with shorter wavelength is being put into practical use.
  • the depth of focus (DOF) is as important as the resolution.
  • the resolution and the depth of focus ⁇ are respectively represented by the following equations.
  • e is the exposure wavelength
  • NA is the numerical aperture of the projection optical system
  • kl and k2 are the process coefficients. From equations (1) and (2), to increase the resolution R, shorten the exposure wavelength and increase the numerical aperture NA. It can be seen that as the depth increases, the depth of focus ⁇ decreases.
  • a liquid immersion method disclosed in Patent Document 1 below has been proposed.
  • this immersion method the space between the lower surface of the projection optical system and the substrate surface is filled with a liquid such as water or an organic solvent to form an immersion area.
  • the resolution is improved by utilizing the fact that n (n is the refractive index of the liquid is usually about 1.2.1.6), and the depth of focus is increased by about ⁇ times.
  • Patent Document 1 WO 99/49504 pamphlet
  • a liquid is locally filled between an end surface on the image plane side of a projection optical system and a substrate (wafer).
  • a shot area near the center of the substrate is exposed, the liquid outside the substrate is exposed. No spills occur.
  • the projection area 100 of the projection optical system is applied to the peripheral area (edge area) ⁇ of the substrate ⁇ to expose the edge area ⁇ of the substrate ⁇
  • the liquid flows out of the substrate and the immersion area is not well formed, which causes a problem that the projected pattern image is deteriorated.
  • the escaping liquid causes inconvenience such as cracking of mechanical parts and the like around the substrate stage that supports the substrate, or leakage of the stage drive system.
  • the escaping liquid goes around the back surface of the substrate and enters between the substrate and the substrate stage (substrate holder), there is a disadvantage that the substrate stage cannot hold the substrate well. Also, if liquid enters the step or gap between the substrate and the substrate stage, there is a possibility that mackerel or electric leakage may occur.
  • the present invention has been made in consideration of the above points, and prevents liquid from entering between a substrate and a holder, and can satisfactorily perform liquid exposure even when an edge region of the substrate is exposed.
  • a stage apparatus an exposure apparatus, and an exposure method that can perform exposure in a state where an immersion area is formed.
  • the porpose is to do.
  • the present invention employs the following configuration corresponding to FIGS. 1 to 10 showing an embodiment of the present invention.
  • the stage device of the present invention is a stage device having a holder for holding the back surface of the substrate and a stage for supporting and moving the holder, wherein the holder holds the back surface of the substrate inside the outer periphery of the substrate. And a liquid repellent member having liquid repellency is provided at least at a position facing the back surface of the substrate.
  • the stage device of the present invention for example, by using a substrate having a liquid-repellent back and periphery, even when exposing the edge region of the substrate, the stage device is disposed between the rear surface of the substrate and the liquid-repellent member. Liquid can be prevented from entering. Therefore, it is possible to perform exposure while holding the substrate well.
  • the stage device of the present invention is a stage device having a holder for holding the back surface of the substrate and a stage for supporting and moving the holder, wherein the holder is provided inside the outer periphery of the substrate. It has a holding portion for holding the back surface, and an elastic member that is elastically deformed and comes into contact with the substrate in a liquid-tight manner is provided on the back surface of the substrate.
  • the elastic member when the substrate is held by the holder, the elastic member is elastically deformed, so that the space between the back surface of the substrate and the elastic member is liquid-tightly sealed. Can be done. Therefore, even when exposing the edge region of the substrate, it is possible to prevent liquid from entering between the back surface of the substrate and the elastic member, and it becomes possible to perform exposure while holding the substrate well.
  • An exposure apparatus of the present invention which exposes a pattern on a substrate by a projection optical system, includes the stage device according to any one of claims 1 to 13. is there. Further, the exposure method of the present invention is characterized in that exposure is performed using the exposure apparatus of the present invention while preventing liquid from entering between the back surface of the substrate and the holder.
  • the exposure apparatus and the exposure method according to the present invention even when the liquid is filled between the projection optical system and the substrate to expose the edge region of the substrate, the liquid remains between the back surface of the substrate and the liquid-repellent member. Liquid Body intrusion can be prevented. Therefore, it is possible to perform exposure while holding the substrate well.
  • the exposure light irradiated through the projection optical system is blocked by the substrate and does not reach the portion of the liquid-repellent member facing the substrate. Therefore, it is possible to prevent the liquid repellency of the liquid repellent member from being impaired by the irradiation of the exposure light, and it is possible to keep the liquid from entering between the back surface of the substrate and the liquid repellent member.
  • the liquid immersion region is formed satisfactorily for a long period of time without impairing the liquid repellency, and the liquid is discharged outside the substrate stage. Exposure can be performed in a state in which outflow of liquid is suppressed, and a device having desired performance can be manufactured.
  • FIG. 1 is a schematic configuration diagram showing one embodiment of an exposure apparatus of the present invention.
  • FIG. 2 is a schematic configuration diagram showing a liquid supply mechanism and a liquid recovery mechanism.
  • FIG. 3 is a plan view of a substrate stage.
  • FIG. 4 is a cross-sectional view of a principal part showing one embodiment of a substrate stage of the present invention.
  • FIG. 5 is a partially enlarged view showing a substrate holder and a plate portion.
  • FIG. 6 is a sectional view taken along line AA in FIG. 5.
  • FIG. 7 is a partially enlarged view showing another form of a substrate holder and a plate portion.
  • FIG. 8 is a sectional view of a main part of a substrate stage according to a second embodiment.
  • FIG. 9 is a partially enlarged view showing a positional relationship between a notch portion of the substrate and a sealing member.
  • FIG. 10 is a cross-sectional view of a main part of a substrate stage having another form of a sealing member.
  • FIG. 11 is a flowchart illustrating an example of a semiconductor device manufacturing process.
  • FIG. 12 is a schematic diagram for explaining a problem of a conventional exposure method.
  • EX exposure apparatus M mask (reticle) MST mask stage P substrate PA surface
  • FIG. 1 is a schematic configuration diagram showing an embodiment of the exposure apparatus of the present invention. (First Embodiment)
  • an exposure apparatus EX includes a mask stage MST supporting a mask M, a substrate stage PST supporting a substrate P, and an illumination for illuminating a mask M supported by the mask stage MST with exposure light EL.
  • the exposure apparatus EX of the present embodiment is an immersion exposure apparatus to which the immersion method is applied in order to improve the resolution by substantially shortening the exposure wavelength and increase the depth of focus.
  • pure water is used as the liquid 1.
  • the exposure apparatus EX uses the liquid 1 supplied from the liquid supply mechanism 10 on at least a part of the substrate P including the projection area AR1 of the projection optical system PL while transferring at least the pattern image of the mask M onto the substrate P.
  • the immersion area AR2 is formed.
  • the exposure apparatus EX fills the liquid 1 between the optical element 2 at the tip of the projection optical system PL and the surface (exposure surface) of the substrate P,
  • the pattern image of the mask M is projected onto the substrate P via the liquid 1 in between and the projection optical system PL, and the substrate P is exposed.
  • the exposure apparatus EX a pattern formed on the mask M while synchronously moving the mask M and the substrate P in different directions (opposite directions) in the running direction is used as the substrate.
  • An example in which a scanning exposure apparatus that exposes P (a so-called scanning stepper) is used will be described.
  • the direction coincident with the optical axis AX of the projection optical system PL is defined as the Z-axis direction
  • the direction perpendicular to the X-axis direction, the Z-axis direction and the Y-axis direction be the Y-axis direction.
  • directions around the X axis, the Y axis, and the Z axis are directions of ⁇ , ⁇ , and ⁇ ⁇ ⁇ ⁇ , respectively.
  • the “substrate” includes a semiconductor wafer coated with a photoresist as a photosensitive material
  • the “mask” includes a reticle on which a device pattern to be reduced and projected onto the substrate is formed.
  • the illumination optical system IL illuminates the mask ⁇ supported by the mask stage MST with the exposure light EL, and it is an exposure light source and an optical source for equalizing the illuminance of the light beam emitted from the exposure light source. It has a condenser lens that collects the exposure light EL from the canola integrator and the opticanole integrator, a relay lens system, and a variable field stop that sets the illumination area on the mask ⁇ ⁇ in a slit shape with the exposure light EL. ing. A predetermined illumination area on the mask ⁇ is illuminated by the illumination optical system IL with exposure light EL having a uniform illuminance distribution.
  • the exposure light EL emitted from the illumination optical system IL is, for example, a bright line (g-line, h-line, i-line) emitted from a mercury lamp or far ultraviolet light (KrF excimer laser light (wavelength: 248 nm)). Vacuum ultraviolet light such as DUV light, Ar F excimer laser light (wavelength 193 nm) and F laser light (wavelength 157 nm)
  • VUV light VUV light
  • ArF excimer laser light is used.
  • the liquid 1 in the present embodiment is pure water, and can be transmitted even when the exposure light EL is ArF excimer laser light. Pure water is also capable of transmitting ultraviolet light (g-line, h-line, i-line) and far ultraviolet light (DUV light) such as KrF excimer laser light (wavelength: 248 nm).
  • the mask stage MST supports the mask M, and is two-dimensionally movable in a plane perpendicular to the optical axis AX of the projection optical system PL, that is, in the XY plane, and is capable of minute rotation in the ⁇ Z direction. .
  • the mask stage MST is driven by a mask stage driving device MST D such as a linear motor.
  • the mask stage drive MSTD is controlled by the controller CONT.
  • a moving mirror 50 is provided on the mask stage MST.
  • a laser interferometer 51 is provided at a position facing the movable mirror 50. The position and rotation angle of the mask M in the two-dimensional direction on the mask stage MST are measured in real time by the laser interferometer 51, and the measurement results are output to the control device CONT.
  • the controller CONT drives the mask stage driver MSTD based on the measurement results of the laser interferometer 51 to control the mask stage. Position the mask M supported by the stage MST.
  • the projection optical system PL is for projecting and exposing the pattern of the mask M onto the substrate ⁇ at a predetermined projection magnification ⁇ , and includes a plurality of optical elements (lenses) 2 provided at the tip of the substrate ⁇ . These optical elements are supported by a lens barrel ⁇ .
  • the projection optical system PL is a reduction system whose projection magnification j3 is, for example, 1/4 or 1/5. Note that the projection optical system PL may be either a unity magnification system or an enlargement system.
  • the optical element 2 at the tip of the projection optical system PL of the present embodiment is provided so as to be attachable / detachable (replaceable) to / from the lens barrel PK. Contact.
  • the optical element 2 is made of fluorite. Since fluorite has a high affinity for water, the liquid 1 can be brought into close contact with almost the entire liquid contact surface 2a of the optical element 2. That is, in the present embodiment, the liquid (water) 1 having a high affinity with the liquid contact surface 2a of the optical element 2 is supplied, so that the liquid contact surface 2a of the optical element 2 is supplied. The optical path between the optical element 2 and the substrate P, which has high adhesion between the substrate 1 and the liquid 1, can be reliably filled with the liquid 1.
  • the optical element 2 may be quartz having a high affinity for water.
  • the liquid contact surface 2a of the optical element 2 may be subjected to a hydrophilic (lyophilic) treatment to increase the affinity with the liquid 1.
  • the lens barrel PK has a portion near the tip in contact with the liquid (water) 1, at least the portion near the tip is formed of a metal such as Ti (titanium) that is resistant to cracks.
  • the substrate stage PST supports the substrate P, and includes a substrate table (stage) 52 for holding the substrate P via the substrate holder PH, an XY stage 53 for supporting the substrate table 52, and an XY stage. And a base 54 for supporting 53.
  • the substrate stage PST is driven by a substrate stage driving device PSTD such as a linear motor.
  • the substrate stage drive PSTD is controlled by the controller CONT.
  • the substrate table 52 functions as a Z stage that controls the focus position and the tilt angle of the substrate P to adjust the surface of the substrate P to the image plane of the projection optical system PL by the autofocus method and the autoleveling method.
  • XY stage 5 3 positions the substrate P in the X-axis direction and the Y-axis direction.
  • the substrate table and the stage may be provided integrally.
  • a movable mirror 55 is provided on the substrate stage PST (substrate table 52).
  • a laser interferometer 56 is provided at a position facing the moving mirror 55.
  • the two-dimensional position and rotation angle of the substrate ⁇ on the substrate stage PST are measured in real time by the laser interferometer 56, and the measurement result is output to the control device CONT.
  • the control device CONT drives the substrate stage driving device PSTD based on the measurement result of the laser interferometer 56 to position the substrate supported by the substrate stage PST.
  • a plate portion 30 surrounding the substrate is provided on the substrate stage PST (substrate table 52).
  • the plate portion 30 is provided integrally with the substrate table 52, and a concave portion 32 is formed inside the plate portion 30. Note that the plate unit 30 and the substrate table 52 may be provided separately.
  • the substrate holder ⁇ for holding the substrate ⁇ is disposed in the recess 32 (see FIG. 4).
  • the plate portion 30 has a flat surface (flat portion) 31 having substantially the same height as the surface ⁇ of the substrate ⁇ held by the substrate holder ⁇ arranged in the concave portion 32.
  • the liquid supply mechanism 10 supplies a predetermined liquid 1 onto the substrate, and includes a first liquid supply unit 11 and a second liquid supply unit 12 capable of supplying the liquid 1, and a first liquid supply unit
  • a first supply member 13 connected to the unit 11 via a supply pipe 11 having a flow path, and having a supply port 13A for supplying the liquid 1 sent from the first liquid supply unit 11 onto the substrate P;
  • a second supply member connected to the second liquid supply section via a supply pipe having a flow path, and having a supply port for supplying the liquid supplied from the second liquid supply section onto the substrate; It has.
  • the first and second supply members 13 and 14 are arranged close to the surface of the substrate P, and are provided at different positions in the plane direction of the substrate P. Specifically, the first supply member 13 of the liquid supply mechanism 10 is provided on one side (one X side) in the scanning direction with respect to the projection area AR1, and the second supply member 14 is provided on the other side (+ X side). Has been.
  • Each of the first and second liquid supply units 11, 12 includes a tank for accommodating the liquid 1, a pressurized pump, and the like, and connects the supply pipes 11A, 12A and the supply members 13, 14 respectively.
  • the liquid 1 is supplied onto the substrate P via Further, the liquid supply operation of the first and second liquid supply units 11 and 12 is controlled by a control device CONT, and the control device CONT includes the first and second liquid supply units 11 and 12.
  • the liquid supply amount per unit time on the substrate P can be independently controlled.
  • each of the first and second liquid supply units 11 and 12 has a liquid temperature adjusting mechanism, and supplies the liquid 1 at a temperature substantially equal to the temperature in the chamber in which the device is housed (for example, 23 ° C.). It is supplied on the substrate P.
  • the liquid recovery mechanism 20 recovers the liquid 1 on the substrate P, and has first and second recovery members 23, 24 having recovery ports 23A, 24A arranged close to the surface of the substrate P. And first and second liquid recovery sections 21 and 22 connected to the first and second recovery members 23 and 24 via recovery pipes 21A and 22A having flow paths, respectively.
  • the first and second liquid recovery units 21 and 22 are provided with, for example, a suction device such as a vacuum pump and a tank for storing the recovered liquid 1.
  • the first and second recovery members collect the liquid 1 on the substrate P. Collect via 23, 24 and collection tubes 21A, 22A.
  • the liquid recovery operation of the first and second liquid recovery units 21 and 22 is controlled by a controller CONT, and the controller CONT can control the amount of liquid recovered per unit time by the first and second liquid recovery units 21 and 22. is there.
  • FIG. 2 is a plan view showing a schematic configuration of the liquid supply mechanism 10 and the liquid recovery mechanism 20.
  • the projection area AR1 of the projection optical system PL is set in a slit shape (rectangular shape) whose longitudinal direction is in the Y-axis direction (non-scanning direction).
  • the area AR2 is formed on a part of the substrate P so as to include the projection area AR1.
  • the first supply member 13 of the liquid supply mechanism 10 for forming the liquid immersion area AR2 of the projection area AR1 is provided on one side (1X side) in the scanning direction with respect to the projection area AR1, and the second supply member 14 is provided on the other side (+ X side).
  • Each of the first and second supply members 13, 14 is formed in a substantially arc shape in plan view, and the size of the supply ports 13A, 14A in the Y-axis direction is at least the Y-axis direction of the projection area AR1. Is set to be larger than the size in.
  • the supply ports 13A and 14A formed in a substantially arc shape in plan view are arranged so as to sandwich the projection area AR1 in the running direction (X-axis direction).
  • the liquid supply mechanism 10 simultaneously supplies the liquid 1 on both sides of the projection area AR1 via the supply ports 13A and 14A of the first and second supply members 13 and 14.
  • Each of the first and second recovery members 23 and 24 of the liquid recovery mechanism 20 has recovery ports 23 A and 24 A continuously formed in an arc shape so as to face the surface of the substrate P. And each other The first and second collection members 23 and 24 arranged to face each other form a substantially annular collection port.
  • the recovery ports 23A and 24A of the first and second recovery members 23 and 24 are arranged so as to surround the first and second supply members 13 and 14 of the liquid supply mechanism 10 and the projection area AR1. Further, a plurality of partition members 25 are provided inside the collection port continuously formed so as to surround the projection area AR1.
  • the liquid 1 supplied onto the substrate P from the supply ports 13A and 14A of the first and second supply members 13 and 14 is supplied to the lower end surface of the tip (optical element 2) of the projection optical system PL and the substrate P It is supplied so that it spreads wet between.
  • the liquid 1 flowing out of the first and second supply members 13 and 14 with respect to the projection area AR1 is disposed outside the projection area AR1 with respect to the first and second supply members 13 and 14.
  • the first and second collection members 23 and 24 are collected from the collection ports 23A and 24A.
  • the liquid supply amount per unit time supplied before the projection area AR1 in the scanning direction is set to be larger than the liquid supply amount supplied on the opposite side.
  • the controller CONT controls the liquid amount from one X side (ie, the supply port 13A) to the projection area AR1 on the + X side (ie, the supply port). 14A), while performing exposure processing while moving the substrate P in the 1X direction, the liquid volume from the + X side to the projection area AR1 is larger than the liquid volume from the 1X side. I do.
  • the liquid recovery amount per unit time before the projection area AR1 is set to be smaller than the liquid recovery amount on the opposite side.
  • the recovery amount from the + X side that is, the recovery port 24A
  • the recovery amount of the -X side that is, the recovery port 23A
  • FIG. 3 is a plan view of the substrate table 52 of the substrate stage PST as viewed from above.
  • a movable mirror 55 is disposed on two rectangular edges of a rectangular substrate table 52 in a plan view.
  • a concave portion 32 is formed in a substantially central portion of the substrate table 52 in a circular shape in a plan view, and a support portion 52a for supporting the substrate holder PH is projected from the concave portion 32.
  • the substrate holder PH for holding the substrate P is supported by the support portion 52a and arranged in the recess 32 with a gap from the substrate table 52.
  • the gap between the substrate table 52 and the substrate holder PH is set (opened) to the atmospheric pressure.
  • a plate portion (liquid-repellent member) 30 having a flat surface (flat portion) 31 having substantially the same height as the surface of the substrate P is provided integrally with the substrate table 52.
  • the two corners of the flat surface 31 of the plate portion 30 are wide, and one of the wide portions is provided with a reference mark FM used for aligning the mask M and the substrate P with respect to a predetermined position.
  • a reference mark FM used for aligning the mask M and the substrate P with respect to a predetermined position.
  • Various sensors such as an illuminance sensor are also provided around the substrate P on the substrate stage PST.
  • the reference mark FM may be provided on the substrate stage PST separately from the force plate portion 30 provided on the plate portion 30 for arranging the reference mark FM.
  • the substrate holder PH has a V-shaped concave portion 71 corresponding to the outer peripheral shape of the substrate P at one edge on the Y side. More specifically, as shown in the enlarged view of the main part in FIG. 5, the outer periphery of the substrate P is cut out at the outer periphery for alignment of the substrate P, and a notch portion (notch portion) is formed in a SV-shaped PV force.
  • the outer periphery of the substrate holder PH has a V-shaped concave portion 71 formed inside the substrate P so as to be offset from the outer peripheral contour by a predetermined distance.
  • the substrate holder PH has a peripheral wall portion (holding portion) 33 that holds the back surface PC of the substrate P inside the outer periphery of the substrate P, and a plurality of holders that are disposed inside the peripheral wall portion 33 and hold the substrate P. And a support section (holding section) 34.
  • the peripheral wall portion 33 is also arranged in the concave portion 71 in a V-shape as in the outer periphery.
  • the support portions 34 are uniformly arranged inside the peripheral wall portion 33.
  • the peripheral wall portion 33 and the support portion 34 are provided on a substantially disk-shaped base portion 35 that constitutes a part of the substrate holder PH.
  • Each of the support portions 34 has a trapezoidal shape in cross section, and the back surface PC of the substrate P is held by the upper end surfaces 34A of the plurality of support portions 34.
  • FIG. 4 is an enlarged sectional view of a main part of the substrate stage PST holding the substrate P.
  • the substrate table 52 (plate portion 30) has a side wall portion 73 forming the concave portion 32.
  • the side wall portion 73 located on the Y side has a V-shaped convex portion 74 protruding toward the inner peripheral side corresponding to the concave portion 71 of the substrate holder PH.
  • the side wall 73 has a length B in a plane with the substrate P (outer periphery) held by the substrate holder PH so as to separate the gap C from the substrate holder PH including the projection 74. It is formed in an overlapping shape.
  • the top surface of the side wall portion 73 has a gap A (for example, with respect to the outer periphery (side surface PB) of the substrate P in plan view. (0.3-0.5 mm), and has a liquid-repellent surface 72 facing the outer periphery of the back surface PC of the substrate P held by the substrate holder PH in a cross-sectional view.
  • the liquid-repellent surface 72 is in a non-contact position with a gap of, for example, 0.2 mm between the back surface PC of the substrate P and the non-contact surface (i.e., the thickness of the substrate P plus the thickness of 0.2 mm from the flat surface 31). (Depth position).
  • a photoresist (photosensitive material) 90 is applied to the surface PA which is the exposed surface of the substrate P.
  • the photosensitive material 90 is a photosensitive material for ArF excimer laser (for example, TARF-P6100 manufactured by Tokyo Ohka Kogyo Co., Ltd.) and has liquid repellency (water repellency), and its contact angle is 70. It is about 80 °.
  • the side surface PB of the substrate P is subjected to a liquid-repellent treatment (water-repellent treatment).
  • a liquid-repellent treatment water-repellent treatment
  • the photosensitive material 90 having liquid repellency is also applied to the side surface PB of the substrate P.
  • the photosensitive material 90 is also applied to the back surface PC of the substrate P and subjected to liquid repellent treatment.
  • a part of the surface of the substrate table 52 is subjected to a liquid-repellent treatment to be liquid-repellent.
  • the flat surface 31, the lyophobic surface 72, and the step 36 between them have lyophobicity.
  • a liquid-repellent treatment of the substrate tape groove 52 (plate portion 30) for example, a liquid-repellent material such as a fluororesin material or an atalyl-resin material is applied, or the thin film having the liquid-repellent material is occupied by a shell I do.
  • the liquid repellent material for making the liquid repellent a material insoluble in the liquid 1 is used.
  • the substrate table 52 may be formed of a material having liquid repellency (such as a fluorine-based resin).
  • the substrate stage PST sucks the liquid 1 flowing into the second space 39 formed by the step portion 36, the side surface PB of the substrate P, and the liquid repellent surface 72 and communicating with the portion of the substrate P facing the back surface PC.
  • a collecting device (suction device) 60 for collecting is equipped with a collecting device (suction device) 60 for collecting.
  • the recovery device 60 includes a tank 61 capable of storing the liquid 1, a flow path 62 provided inside the substrate table 52 and connecting the space 39 and the tank 61, and a tank 63 through a valve 63. And a pump 64 connected thereto.
  • the inner wall surface of the flow path 62 is also subjected to a liquid repellent treatment.
  • the substrate stage PST includes a suction device 40 that makes the first space 38 surrounded by the peripheral wall 33 of the substrate holder PH a negative pressure.
  • the suction device 40 is located on the base 35 of the substrate holder PH.
  • a plurality of suction ports 41 provided on the substrate stage, a vacuum section 42 including a vacuum pump provided outside the substrate stage PST, and a connection between each of the plurality of suction ports 41 formed in the base section 35 and the vacuum section 42.
  • a flow channel 43 that communicates therewith.
  • the suction ports 41 are provided at a plurality of predetermined positions on the upper surface of the base portion 35 other than the support portion 34, respectively.
  • the suction device 40 sucks gas (air) inside the first space 38 formed between the peripheral wall portion 33, the base portion 35, and the substrate P supported by the support portion 34, and The substrate P is sucked and held on the support portion 34 by setting the pressure to a negative pressure.
  • the operations of the collecting device 60 and the suction device 40 are controlled by the control device CONT.
  • the liquid 1 in the immersion region AR2 is disposed on a part of the surface PA of the substrate P and a part of the flat surface 31 of the plate portion 30. Is done.
  • the edge region E to be exposed is not at the notch portion PV of the substrate P, but is located at the position, the side surface PB of the substrate P and the step portion 36 facing the side surface PB have been subjected to lyophobic treatment.
  • the gap between them is not large, as shown in Fig. 4, the liquid 1 in the liquid immersion area AR2 hardly penetrates into the gap A, and almost always flows into the gap A due to its surface tension.
  • the gap between the outer periphery of the substrate P and the step portion 36 of the plate portion 30 becomes large, for example, to about 2 mm. 6, the liquid 1 penetrates into the second space 39 between them as shown in FIG.
  • both the rear surface PC of the substrate P and the liquid repellent surface 72 have liquid repellency, and the gap between the rear surface PC and the liquid repellent surface 72 is very small.
  • the liquid 1 that has penetrated into the gap rarely flows into the recess 32 from the gap due to the surface tension that makes it difficult to enter the gap.
  • the liquid 1 that has flowed into the second space 39 is stored in the tank via the flow path 62 by the collection device 60 at a timing that does not hinder the vibrations caused by suction from being transmitted to the substrate P, for example, when replacing the substrate. Suctioned and collected at 61 (see Figure 4).
  • the tank 61 is provided with a discharge channel 61A, and when a predetermined amount of the liquid 1 is accumulated, the liquid 1 is discharged from the discharge channel 61A.
  • the lyophobic surface of the plate portion 30 faces the back surface PC of the substrate P. 72, the liquid 1 is prevented from flowing between the substrate P and the holder PH even when exposing the edge area E of the substrate P, and the liquid 1 is placed under the projection optical system PL. Immersion lithography can be performed while maintaining good conditions. Particularly, in the present embodiment, since the substrate holder PH and the plate portion 30 have the concave portion 71 and the convex portion 74 corresponding to the notch portion PV of the substrate P, the notch portion PV for alignment is formed. When the substrate P is used, the liquid 1 can be prevented from flowing around even at the notch portion PV, and good immersion exposure can be performed.
  • the substrate P acts as a light shielding member, and the exposure light is applied to the liquid-repellent surface 72 facing the substrate P. Do not reach. Therefore, it is possible to prevent the liquid repellency of the liquid repellent surface 72 from being impaired by the irradiation of the exposure light, and it is possible to maintain the liquid 1 intrusion prevention state for a long time. Further, in the present embodiment, since the liquid-repellent surface 72 is not in contact with the back surface PC of the substrate P, the deformation of the substrate P caused by the contact, and the heat transmitted to the substrate P via the plate portion 30 It can prevent adverse effects such as vibration and vibration.
  • the liquid 1 forming the liquid immersion region AR2 is prevented from being excessively spread to the outside of the plate portion 30, and the liquid immersion region AR2 is improved. And can prevent inconveniences such as outflow and scattering of the liquid 1.
  • the liquid 1 that has entered the second space 39 is collected by the collecting device 60, the liquid existing in the second space 39 is transferred to the concave portion 32 and the substrate holder PH when the substrate P is replaced. Spattering can be prevented.
  • the substrate holder PH and the plate portion 30 have the V-shaped concave and convex portions in accordance with the notch portion PV of the substrate P.
  • the present invention is not limited to this.
  • the side wall 73 of the plate portion 30 projects in a circular shape in plan view from the notch portion PV of the substrate P, and a circular shape with an outer diameter separating the side wall portion 74 and the gap C.
  • the substrate holder PH may be provided.
  • the substrate P can be held by the substrate holder PH irrespective of the position and presence of the notch, and it is possible to prevent the liquid from flowing to the back surface side, thereby improving versatility.
  • the liquid repellent surface 72 is configured to be in non-contact with the back surface PC of the substrate P.
  • the configuration is not limited to non-contact and may be in a contact state.
  • FIG. 8 is a diagram showing a second embodiment of the stage device of the present invention.
  • the liquid intrusion is prevented by the liquid-repellent surface 72 facing the rear surface of the substrate P.
  • the liquid intrusion is prevented by an elastic member abutting on the substrate P. I am taking it.
  • FIG. 8 the same components as those of the first embodiment shown in FIG. 4 and the like are denoted by the same reference numerals, and description thereof will be omitted.
  • a fitting groove 75 having a rectangular cross section is formed outside the peripheral wall portion 33 of the substrate holder PH and at a position facing the outer peripheral portion of the substrate P.
  • the mating groove 75 is curved inward from the outer periphery of the substrate P held by the substrate holder PH and, as shown in FIG. 9, at a position corresponding to the notch PV of the substrate P, inwardly of the notch PV. It is formed so that.
  • a sealing member (elastic member) 76 made of an elastic material having liquid repellency, which is preferable from the viewpoint of chemical clean such as fluoro rubber, is fitted and fixed in the fitting groove 75 in a press-fit state. .
  • the seal member 76 is provided with an elastic portion 77 that extends diagonally upward toward the outer periphery of the substrate P.
  • the upper end of the elastic portion 77 slightly protrudes from the upper end surfaces of the peripheral wall portion 33 and the support portion 34 (indicated by a two-dot chain line in FIG. 8), and when the substrate P is held by the substrate holder PH. It is elastically deformed and contacts the rear surface PC of the substrate P.
  • the urging force (elastic restoring force) on the substrate P due to the elastic deformation of the elastic portion 77 is set to a value that does not cause the substrate P to be deformed and is in a liquid-tight state that prevents liquid from entering. .
  • the collection device 60 in the present embodiment sucks the space 39 (the liquid that has entered the outside) of the contact portion between the seal member 76 and the substrate P.
  • Other configurations are the same as those in the first embodiment.
  • the back surface PC of the substrate P and the elastic portion 77 of the seal member 76 are in liquid-tight contact with each other. Liquids can be prevented from entering.
  • the seal member 76 since the seal member 76 has liquid repellency, it is possible to effectively prevent liquid from entering.
  • the liquid that has entered the second space 39 is suctioned and collected by the recovery device 60, it is possible to prevent the liquid from being scattered at the time of collecting the substrate or the like and the liquid pressure in the second space 39 being increased. .
  • the back surface PC of the substrate P is not necessarily required to be lyophobic.
  • the biasing force of the elastic portion 77 may fluctuate due to a change over time or the like, it is preferable that the rear surface PC also has a configuration having liquid repellency.
  • the fitting groove 75 and the sealing member 76 are arranged to be curved in accordance with the notch portion PV of the substrate P as shown in FIG. As shown by the dashed line, the substrate P may be arranged in a circular shape inside the notch portion PV.
  • the substrate P can be held by the substrate holder PH irrespective of the position and presence of the notch, and it is possible to prevent the liquid from flowing to the back surface side, thereby improving versatility.
  • a force in which the seal member 76 is provided on the substrate holder PH may be provided on the plate portion 30 as shown in FIG.
  • the seal member 76 is fitted into a fitting groove 75 opened on the upper surface of the plate portion 30, and the seal member 76 is fixed to the upper surface of the plate portion 30.
  • a holding member 78 for holding the seal member 76 can be provided.
  • the holding member 78 may be fixed from the back surface side of the plate portion 30 with a fastening member 79 such as a mounting screw. It is preferable that the upper surface 78a of the sandwiching member 78 be substantially flush with the surface PA of the substrate P to further impart liquid repellency.
  • the liquid-repellent surface 72 of the plate portion 30 in the above-described embodiment does not necessarily have to have liquid-repellency on the entire surface, and at least the position facing the rear surface PC of the substrate P has liquid-repellency. Just do it.
  • the entire surface of the flat surface 31 of the plate portion 30 also has liquid repellency. It is not necessary that at least the positions of the liquid recovery mechanism 20 facing the first and second recovery members 23 and 24 have liquid repellency.
  • the force S in which the photosensitive material 90 is applied for the liquid-repellent treatment to the entire surface of the front surface PA, the side surface PB, and the rear surface PC of the substrate P, and the region where the gap A is formed may be performed only on a region of the side surface PB of the substrate P and the back surface PC of the substrate P facing the liquid repellent surface 72 of the plate portion 30.
  • a photosensitive material 90 having liquid repellency is applied for the liquid repellent treatment of the side surface PB and the back surface PC of the substrate P.
  • the liquid repellency (water repellency) other than the photosensitive material 90 is applied to the side surface PB and the back surface PC.
  • a predetermined material having the following may be applied.
  • a protective layer called a top coat layer (a film that also protects the photosensitive material 90 with a liquid force) may be applied on the photosensitive material 90 coated on the surface PA, which is the exposed surface of the substrate P.
  • the material for forming the coat layer for example, a fluorine-based resin material
  • a material having liquid repellency other than the photosensitive material 90 and the material for forming the top coat layer may be applied.
  • the lyophobic treatment of the substrate stage PST and the substrate holder PH has been described as applying a fluorinated resin material or an acrylic resin material. Or the substrate holder PH, or conversely, apply the material used for the liquid repellent treatment of the substrate stage PST and the substrate holder PH to the side surface PB and the back surface PC of the substrate P. Moore.
  • the top coat layer is often provided to prevent the liquid 1 in the liquid immersion area AR2 from penetrating into the photosensitive material 90.
  • a trace of adhesion of the liquid 1 on the top coat layer (a so-called ⁇ Even if ()) is formed, by removing this top coat layer after the liquid immersion exposure, a predetermined process such as a development process can be performed after removing the watermark together with the top coat layer.
  • a predetermined process such as a development process can be performed after removing the watermark together with the top coat layer.
  • the top coat layer is formed of, for example, a fluorine-based resin material, it can be removed using a fluorine-based solvent.
  • the predetermined process can be satisfactorily performed after the removal of the mark.
  • the substrate P is cut out in a direction orthogonal to the radial direction of the force described as the notch having a V-shape in plan view is provided as a notch for positioning the substrate P.
  • the present invention can be applied to a substrate provided with a so-called orientation flat (orientation 'flat), and further to a substrate having no notch for alignment.
  • the liquid 1 is composed of pure water. Pure water has the advantage that it can be easily obtained in large quantities at a semiconductor manufacturing plant or the like, and that there is no adverse effect on the photoresist on the substrate P, optical elements (lenses), and the like. In addition, pure water has no adverse effect on the environment and has an extremely low impurity content. Therefore, it is expected that the surface of the substrate P and the surface of the optical element provided on the front end surface of the projection optical system PL are also cleaned. it can.
  • PFPE perfluorinated polyether
  • the refractive index n of pure water (water) with respect to the exposure light EL having a wavelength of about 193 nm is approximately 1.44
  • ArF excimer laser light (wavelength 193 nm) was used as the light source of the exposure light EL.
  • the wavelength is shortened to 1 / n, that is, about 134 nm on the substrate P, and a high resolution is obtained.
  • the depth of focus is expanded to about n times, that is, about 1.44 times as compared to that in the air, if it is sufficient to secure the same depth of focus as when using it in the air, the projection optics
  • the numerical aperture of the system PL can be further increased, and the resolution is improved in this respect as well.
  • the optical element 2 is attached to the tip of the projection optical system PL, and the lens is used to adjust the optical characteristics of the projection optical system PL, for example, aberrations (spherical aberration, coma, etc.). be able to.
  • the optical element attached to the tip of the projection optical system PL may be an optical plate used for adjusting the optical characteristics of the projection optical system PL. Alternatively, it may be a plane-parallel plate that can transmit EL light.
  • the optical element When the pressure between the optical element at the tip of the projection optical system PL and the substrate P caused by the flow of the liquid 1 is large, the optical element is not replaced by the pressure, but the optical element is not replaced. However, it may be fixed firmly so as not to have power.
  • the space between the projection optical system PL and the surface of the substrate P is filled with the liquid 1, but, for example, a cover glass made of a parallel flat plate is attached to the surface of the substrate P.
  • a configuration in which the liquid 1 is filled in a dashed state may be employed.
  • the liquid 1 of the present embodiment is water, but may be a liquid other than water.
  • the light source of the exposure light EL is an F laser, this F laser light does not pass through water, so the liquid 1
  • Is a fluorine-based fluid such as a fluorine-based oil that can transmit F laser light.
  • liquid 1 other liquids which are transparent to the exposure light EL and have a refractive index as high as possible and which are stable to the photoresist applied to the surface of the substrate P or the substrate P (for example, Cedar) Oil) can also be used. Also in this case, the surface treatment is performed according to the polarity of the liquid 1 to be used.
  • the substrate P in each of the above embodiments not only a semiconductor wafer for manufacturing a semiconductor device, but also a glass substrate for a display device, a ceramic wafer for a thin-film magnetic head, or a mask or a mask used in an exposure apparatus.
  • the original reticle synthetic quartz, silicon wafer etc. is applied.
  • the exposure apparatus EX includes a step of scanning and exposing the pattern of the mask M by synchronously moving the mask M and the substrate P.
  • the method can be applied to a step-and-repeat type projection exposure apparatus (stepper) in which the pattern of the mask M is exposed collectively while the M and the substrate P are stationary, and the substrate P is sequentially moved step by step.
  • the present invention can be applied to a step-and-stitch type exposure apparatus that transfers at least two patterns on the substrate P while partially overlapping each other.
  • the present invention can also be applied to a twin-stage type exposure apparatus disclosed in JP-A-10-163099, JP-A-10-214783, and JP-T-2000-505958.
  • the type of the exposure apparatus EX is not limited to an exposure apparatus for manufacturing a semiconductor element that exposes a substrate P with a semiconductor element pattern, but may be an exposure apparatus for manufacturing a liquid crystal display element or a display, a thin-film magnetic head, It can be widely applied to an exposure device for manufacturing an image pickup device (CCD), a reticle or a mask, and the like.
  • CCD image pickup device
  • a linear motor (USP No. 5, 623, 853 or If USP No. 5,528,118 is used, either an air levitation type using an air bearing or a magnetic levitation type using Lorentz force or reactance force may be used.
  • each stage PST and MST can be either a type that moves along the guide or a guideless type that does not have a guide.
  • a magnet unit having a two-dimensionally arranged magnet and an armature unit having a two-dimensionally arranged coil are opposed to each other to drive each stage PST, MST by electromagnetic force.
  • a flat motor may be used.
  • one of the magnet unit and the armature unit may be connected to the stages PST and MST, and the other of the magnet unit and the armature unit may be provided on the moving surface side of the stages PST and MST.
  • the exposure apparatus EX of the present embodiment assembles various subsystems including the respective constituent elements recited in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. It is manufactured by. Before and after this assembly, adjustments to achieve optical accuracy for various optical systems, adjustments to achieve mechanical accuracy for various mechanical systems, Adjustments are made to achieve electrical accuracy for various electrical systems.
  • the process of assembling the various subsystems into the exposure apparatus includes mechanical connections, wiring connections of electric circuits, and piping connections of pneumatic circuits among the various subsystems. It goes without saying that there is an individual assembly process for each subsystem before the assembly process from these various subsystems to the exposure apparatus. When the process of assembling the various subsystems into the exposure apparatus is completed, comprehensive adjustment is performed, and various precisions of the entire exposure apparatus are ensured.
  • the manufacture of the exposure apparatus includes temperature and cleanliness. It is desirable to perform in a controlled clean room.
  • a step 201 for performing a function 'performance design of the micro device a step 202 for manufacturing a mask (reticle) based on this design step, Step 203 of manufacturing a substrate as a base material, exposure processing step 204 of exposing a mask pattern to the substrate by the exposure apparatus EX of the above-described embodiment, device assembly step (including dicing step, bonding step, and package step) 205 It is manufactured through the inspection step 206 and the like.
  • the liquid immersion region is favorably formed over a long period of time without impairing the liquid repellency, and the liquid is discharged to the outside of the substrate stage. Exposure can be performed in a state in which outflow of liquid is suppressed, and a device having desired performance can be manufactured.

Abstract

A stage apparatus (PST) has a holder (PH) for holding the back surface (PC) of a substrate (P) and a stage (52) moving while supporting the holder (PH). The holder (PH) has holding sections (33, 34) for holding, on the inner side of the outer periphery of the substrate (P), the back surface (PC) of the substrate (P). Further, the stage apparatus (PST) has a liquid repelling member (30) with liquid repelling ability, the liquid repelling member (30) provided separately from the holder (PH) at least at a position opposite the back surface (PC) of the substrate (P). As a result, liquid is prevented from entering between the substrate and the holder even when exposure processing is performed with the liquid placed between a projection optical system and the substrate.

Description

明 細 書  Specification
ステージ装置、露光装置、及び露光方法  Stage apparatus, exposure apparatus, and exposure method
技術分野  Technical field
[0001] 本発明は、基板を保持するホルダとこのホルダを支持して移動するステージとを有 するステージ装置及びこのステージ装置を備えた露光装置、並びに露光方法に関し 、特に投影光学系と液体とを介してパターンの像を基板に露光する際に用レ、て好適 なステージ装置及び露光装置、並びに露光方法に関するものである。また、本願は、 The present invention relates to a stage apparatus having a holder for holding a substrate and a stage for supporting and moving the holder, an exposure apparatus having the stage apparatus, and an exposure method, and particularly to a projection optical system, a liquid, More particularly, the present invention relates to a stage device, an exposure apparatus, and an exposure method which are suitable for use when exposing a pattern image to a substrate via a substrate. Also, the present application
2003年 12月 16日に出願された特願 2003-417518号に対し優先権を主張し、そ の内容をここに援用する。 Claim the priority of Japanese Patent Application No. 2003-417518 filed on December 16, 2003, the contents of which are incorporated herein by reference.
背景技術  Background art
[0002] 半導体デバイスや液晶表示デバイスは、マスク上に形成されたパターンを感光性の 基板上に転写する、いわゆるフォトリソグラフィの手法により製造される。  [0002] Semiconductor devices and liquid crystal display devices are manufactured by a so-called photolithography technique in which a pattern formed on a mask is transferred onto a photosensitive substrate.
このフォトリソグラフイエ程で使用される露光装置は、マスクを支持するマスクステー ジと基板を支持する基板ステージとを有し、マスクステージ及び基板ステージを逐次 移動しながらマスクのパターンを投影光学系を介して基板に転写するものである。近 年、デバイスパターンのより一層の高集積化に対応するために投影光学系の更なる 高解像度化が望まれている。投影光学系の解像度は、使用する露光波長が短いほ ど、また投影光学系の開口数が大きいほど高くなる。そのため、露光装置で使用され る露光波長は年々短波長化しており、投影光学系の開口数も増大している。そして、 現在主流の露光波長は KrFエキシマレーザの 248nmである力 更に短波長の ArF エキシマレーザの 193nmも実用化されつつある。また、露光を行う際には、解像度と 同様に焦点深度 (DOF)も重要となる。解像度 及び焦点深度 δはそれぞれ以下 の式で表される。  An exposure apparatus used in the photolithography process has a mask stage for supporting a mask and a substrate stage for supporting a substrate. The mask stage and the substrate stage are sequentially moved, and a projection optical system is used to project the pattern of the mask. Transfer to the substrate via In recent years, further improvement in the resolution of the projection optical system has been desired in order to cope with higher integration of device patterns. The resolution of the projection optical system increases as the exposure wavelength used decreases and as the numerical aperture of the projection optical system increases. For this reason, the exposure wavelength used in the exposure apparatus is becoming shorter year by year, and the numerical aperture of the projection optical system is also increasing. At present, the mainstream exposure wavelength is 248 nm for KrF excimer laser, and 193 nm for ArF excimer laser with shorter wavelength is being put into practical use. When performing exposure, the depth of focus (DOF) is as important as the resolution. The resolution and the depth of focus δ are respectively represented by the following equations.
R=kl - λ /ΝΑ … (1)  R = kl-λ / ΝΑ… (1)
5 = ±k2 ' /NA2 · · · (2)  5 = ± k2 '/ NA2 (2)
ここで、 えは露光波長、 NAは投影光学系の開口数、 kl、 k2はプロセス係数である 。 (1)式、(2)式より、解像度 Rを高めるために、露光波長えを短くして、開口数 NAを 大きくすると、焦点深度 δが狭くなることが分かる。 Here, e is the exposure wavelength, NA is the numerical aperture of the projection optical system, and kl and k2 are the process coefficients. From equations (1) and (2), to increase the resolution R, shorten the exposure wavelength and increase the numerical aperture NA. It can be seen that as the depth increases, the depth of focus δ decreases.
[0003] このとき、焦点深度 δが狭くなり過ぎると、投影光学系の像面に対して基板表面を 合致させることが困難となり、露光動作時のマージンが不足するおそれがある。  [0003] At this time, if the depth of focus δ becomes too narrow, it becomes difficult to match the substrate surface with the image plane of the projection optical system, and there is a possibility that the margin during the exposure operation becomes insufficient.
そこで、実質的に露光波長を短くして、且つ焦点深度を広くする方法として、例え ば下記特許文献 1に開示されている液浸法が提案されている。この液浸法は、投影 光学系の下面と基板表面との間を水や有機溶媒等の液体で満たして液浸領域を形 成し、液体中での露光光の波長が空気中の l/n (nは液体の屈折率で通常 1. 2-1 . 6程度)になることを利用して解像度を向上させるとともに、焦点深度を約 η倍に拡 大するというものである。  Therefore, as a method of substantially shortening the exposure wavelength and increasing the depth of focus, for example, a liquid immersion method disclosed in Patent Document 1 below has been proposed. In this immersion method, the space between the lower surface of the projection optical system and the substrate surface is filled with a liquid such as water or an organic solvent to form an immersion area. The resolution is improved by utilizing the fact that n (n is the refractive index of the liquid is usually about 1.2.1.6), and the depth of focus is increased by about η times.
特許文献 1:国際公開第 99/49504号パンフレット  Patent Document 1: WO 99/49504 pamphlet
発明の開示  Disclosure of the invention
発明が解決しょうとする課題  Problems to be solved by the invention
[0004] し力 ながら、上述したような従来技術には、以下のような問題が存在する。  [0004] However, the above-described conventional techniques have the following problems.
上記従来技術は、投影光学系の像面側の端面と基板 (ウェハ)との間を局所的に 液体で満たす構成であり、基板の中央付近のショット領域を露光する場合には液体 の基板外側への流出は生じなレ、。し力、しながら、図 12に示す模式図のように、基板 Ρ の周辺領域 (エッジ領域) Εに投影光学系の投影領域 100をあててこの基板 Ρのエツ ジ領域 Εを露光しょうとすると、液体は基板 Ρの外側へ流出して液浸領域が良好に形 成されず、投影されるパターン像を劣化させるという不都合が生じる。また、流出した 液体により、基板 Ρを支持する基板ステージ周辺の機械部品等に鲭びが生じたり、あ るいはステージ駆動系等の漏電を引き起こすといった不都合も生じる。更に、流出し た液体が基板の裏面に回り込んで、基板と基板ステージ (基板ホルダ)との間に浸入 すると、基板ステージは基板を良好に保持できないという不都合も生じる。また、基板 Ρと基板ステージとの間の段差や隙間に液体が浸入した場合にも、鯖びや漏電を引 き起こす可能性がある。  In the above-described conventional technology, a liquid is locally filled between an end surface on the image plane side of a projection optical system and a substrate (wafer). When a shot area near the center of the substrate is exposed, the liquid outside the substrate is exposed. No spills occur. As shown in the schematic diagram of FIG. 12, when the projection area 100 of the projection optical system is applied to the peripheral area (edge area) Ε of the substrate Ρ to expose the edge area Ρ of the substrate Ρ On the other hand, the liquid flows out of the substrate and the immersion area is not well formed, which causes a problem that the projected pattern image is deteriorated. In addition, the escaping liquid causes inconvenience such as cracking of mechanical parts and the like around the substrate stage that supports the substrate, or leakage of the stage drive system. Furthermore, if the escaping liquid goes around the back surface of the substrate and enters between the substrate and the substrate stage (substrate holder), there is a disadvantage that the substrate stage cannot hold the substrate well. Also, if liquid enters the step or gap between the substrate and the substrate stage, there is a possibility that mackerel or electric leakage may occur.
[0005] 本発明は、以上のような点を考慮してなされたもので、基板とホルダとの間に液体 が浸入することを防止し、基板のエッジ領域を露光する場合にも良好に液浸領域を 形成した状態で露光できるステージ装置及び露光装置、並びに露光方法を提供す ることを目的とする。 [0005] The present invention has been made in consideration of the above points, and prevents liquid from entering between a substrate and a holder, and can satisfactorily perform liquid exposure even when an edge region of the substrate is exposed. Provided are a stage apparatus, an exposure apparatus, and an exposure method that can perform exposure in a state where an immersion area is formed. The porpose is to do.
課題を解決するための手段  Means for solving the problem
[0006] 上記の目的を達成するために本発明は、本発明の実施の形態を示す図 1ないし図 10に対応付けした以下の構成を採用している。  [0006] In order to achieve the above object, the present invention employs the following configuration corresponding to FIGS. 1 to 10 showing an embodiment of the present invention.
本発明のステージ装置は、基板の裏面を保持するホルダと、ホルダを支持して移動 するステージとを有するステージ装置であって、ホルダが基板の外周よりも内側で基 板の裏面を保持する保持部を有し、ホルダとは別に設けられ、少なくとも基板の裏面 と対向する位置に撥液性を有する撥液部材を設けたことを特徴とするものである。  The stage device of the present invention is a stage device having a holder for holding the back surface of the substrate and a stage for supporting and moving the holder, wherein the holder holds the back surface of the substrate inside the outer periphery of the substrate. And a liquid repellent member having liquid repellency is provided at least at a position facing the back surface of the substrate.
[0007] 従って、本発明のステージ装置では、例えば裏面及び周囲が撥液性を有する基板 を用いることで、基板のエッジ領域を露光する際にも、基板の裏面と撥液部材との間 への液体の浸入を防止することができる。従って、基板を良好に保持しつつ露光する ことが可能となる。  Therefore, in the stage device of the present invention, for example, by using a substrate having a liquid-repellent back and periphery, even when exposing the edge region of the substrate, the stage device is disposed between the rear surface of the substrate and the liquid-repellent member. Liquid can be prevented from entering. Therefore, it is possible to perform exposure while holding the substrate well.
[0008] また、本発明のステージ装置は、基板の裏面を保持するホルダと、ホルダを支持し て移動するステージとを有するステージ装置であって、ホルダは、基板の外周よりも 内側で基板の裏面を保持する保持部を有し、基板の裏面に弾性変形して液密に当 接する弾性部材が設けられていることを特徴とするものである。  [0008] Further, the stage device of the present invention is a stage device having a holder for holding the back surface of the substrate and a stage for supporting and moving the holder, wherein the holder is provided inside the outer periphery of the substrate. It has a holding portion for holding the back surface, and an elastic member that is elastically deformed and comes into contact with the substrate in a liquid-tight manner is provided on the back surface of the substrate.
[0009] 従って、本発明のステージ装置では、基板をホルダに保持させた際に、弾性部材 が弾性変形することで基板の裏面と弾性部材との間を液密に密封 (封止)することが できる。そのため、基板のエッジ領域を露光する際にも、基板の裏面と弾性部材との 間への液体の浸入を防止することができ、基板を良好に保持しつつ露光することが 可能となる。  Therefore, in the stage device of the present invention, when the substrate is held by the holder, the elastic member is elastically deformed, so that the space between the back surface of the substrate and the elastic member is liquid-tightly sealed. Can be done. Therefore, even when exposing the edge region of the substrate, it is possible to prevent liquid from entering between the back surface of the substrate and the elastic member, and it becomes possible to perform exposure while holding the substrate well.
[0010] そして、本発明の露光装置は、投影光学系により基板にパターンを露光する露光 装置において、請求項 1から 13のいずれか一項に記載のステージ装置を備えること を特徴とするものである。また、本発明の露光方法は、本発明の露光装置を用い、基 板の裏面とホルダとの間への液体の浸入を防止しつつ露光を行うことを特徴とするも のである。  [0010] An exposure apparatus of the present invention, which exposes a pattern on a substrate by a projection optical system, includes the stage device according to any one of claims 1 to 13. is there. Further, the exposure method of the present invention is characterized in that exposure is performed using the exposure apparatus of the present invention while preventing liquid from entering between the back surface of the substrate and the holder.
[0011] 従って、本発明の露光装置及び露光方法では、投影光学系と基板との間に液体を 満たして基板のエッジ領域を露光する際にも、基板の裏面と撥液部材との間への液 体の浸入を防止することができる。従って、基板を良好に保持しつつ露光することが 可能となる。 Therefore, in the exposure apparatus and the exposure method according to the present invention, even when the liquid is filled between the projection optical system and the substrate to expose the edge region of the substrate, the liquid remains between the back surface of the substrate and the liquid-repellent member. Liquid Body intrusion can be prevented. Therefore, it is possible to perform exposure while holding the substrate well.
また、本発明では、撥液部材を用いる場合に、投影光学系を介して照射された露 光光が基板により遮光され撥液部材の基板との対向部分に到達しなレ、。そのため、 撥液部材の撥液性が露光光の照射により損なわれることを防ぐことができ、基板の裏 面と撥液部材との間への液体の浸入防止を維持することが可能となる。  Further, in the present invention, when a liquid-repellent member is used, the exposure light irradiated through the projection optical system is blocked by the substrate and does not reach the portion of the liquid-repellent member facing the substrate. Therefore, it is possible to prevent the liquid repellency of the liquid repellent member from being impaired by the irradiation of the exposure light, and it is possible to keep the liquid from entering between the back surface of the substrate and the liquid repellent member.
発明の効果  The invention's effect
[0012] 以上のように、本発明では、基板のエッジ領域を露光する場合にも、長期に亘つて 撥液性が損なわれることなく良好に液浸領域を形成し、液体の基板ステージ外部へ の流出を抑えた状態で露光でき、所望の性能を有するデバイスを製造できる。 図面の簡単な説明  As described above, according to the present invention, even when exposing the edge region of the substrate, the liquid immersion region is formed satisfactorily for a long period of time without impairing the liquid repellency, and the liquid is discharged outside the substrate stage. Exposure can be performed in a state in which outflow of liquid is suppressed, and a device having desired performance can be manufactured. Brief Description of Drawings
[0013] [図 1]本発明の露光装置の一実施形態を示す概略構成図である。  FIG. 1 is a schematic configuration diagram showing one embodiment of an exposure apparatus of the present invention.
[図 2]液体供給機構及び液体回収機構を示す概略構成図である。  FIG. 2 is a schematic configuration diagram showing a liquid supply mechanism and a liquid recovery mechanism.
[図 3]基板ステージの平面図である。  FIG. 3 is a plan view of a substrate stage.
[図 4]本発明の基板ステージの一実施形態を示す要部断面図である。  FIG. 4 is a cross-sectional view of a principal part showing one embodiment of a substrate stage of the present invention.
[図 5]基板ホルダとプレート部とを示す部分拡大図である。  FIG. 5 is a partially enlarged view showing a substrate holder and a plate portion.
[図 6]図 5における A— A線視断面図である。  FIG. 6 is a sectional view taken along line AA in FIG. 5.
[図 7]別形態の基板ホルダとプレート部とを示す部分拡大図である。  FIG. 7 is a partially enlarged view showing another form of a substrate holder and a plate portion.
[図 8]第 2実施形態に係る基板ステージの要部断面図である。  FIG. 8 is a sectional view of a main part of a substrate stage according to a second embodiment.
[図 9]基板のノッチ部とシール部材との位置関係を示す部分拡大図である。  FIG. 9 is a partially enlarged view showing a positional relationship between a notch portion of the substrate and a sealing member.
[図 10]別形態のシール部材を有する基板ステージの要部断面図である。  FIG. 10 is a cross-sectional view of a main part of a substrate stage having another form of a sealing member.
[図 11]半導体デバイスの製造工程の一例を示すフローチャート図である。  FIG. 11 is a flowchart illustrating an example of a semiconductor device manufacturing process.
[図 12]従来の露光方法の課題を説明するための模式図である。  FIG. 12 is a schematic diagram for explaining a problem of a conventional exposure method.
符号の説明  Explanation of symbols
[0014] EX 露光装置 M マスク(レチクル) MST マスクステージ P 基板 PA 表面  [0014] EX exposure apparatus M mask (reticle) MST mask stage P substrate PA surface
PH 基板ホルダ(ホルダ) PST 基板ステージ (ステージ装置) PL 投影光学系 PV ノッチ部 (切欠部) 10 液体供給機構 (供給装置) 30 プレート部 (撥液部 材) 31 平坦面 (平坦部) 33 周壁部 (保持部) 34 支持部 (保持部) 39 第 2 空間(空間) 52 基板テーブル (ステージ) 60 回収装置(吸引装置) 71 凹部 74 凸部 76 シール部材(弾性部材) PH Substrate holder (Holder) PST Substrate stage (Stage device) PL Projection optical system PV Notch portion (Notch portion) 10 Liquid supply mechanism (Supply device) 30 Plate portion (Liquid repellent material) 31 Flat surface (Flat portion) 33 Peripheral wall Part (holding part) 34 Support part (holding part) 39 2nd Space (space) 52 Substrate table (stage) 60 Recovery unit (suction unit) 71 Recess 74 Convex 76 Seal member (elastic member)
発明を実施するための最良の形態  BEST MODE FOR CARRYING OUT THE INVENTION
[0015] 以下、本発明のステージ装置及び露光装置の実施の形態を、図 1ないし図 11を参 照して説明する。図 1は本発明の露光装置の一実施形態を示す概略構成図である。 (第 1実施形態) Hereinafter, embodiments of a stage apparatus and an exposure apparatus of the present invention will be described with reference to FIGS. 1 to 11. FIG. 1 is a schematic configuration diagram showing an embodiment of the exposure apparatus of the present invention. (First Embodiment)
図 1において、露光装置 EXは、マスク Mを支持するマスクステージ MSTと、基板 P を支持する基板ステージ PSTと、マスクステージ MSTに支持されてレ、るマスク Mを露 光光 ELで照明する照明光学系 ILと、露光光 ELで照明されたマスク Mのパターン像 をステージ装置としての基板ステージ PSTに支持されている基板 Pに投影露光する 投影光学系 PLと、露光装置 EX全体の動作を統括制御する制御装置 CONTとを備 えている。  In FIG. 1, an exposure apparatus EX includes a mask stage MST supporting a mask M, a substrate stage PST supporting a substrate P, and an illumination for illuminating a mask M supported by the mask stage MST with exposure light EL. Controls the overall operation of the projection optical system PL and the entire exposure system EX, which projects and exposes the pattern image of the mask M illuminated by the optical system IL and the exposure light EL onto the substrate P supported by the substrate stage PST as a stage device. It has a control device CONT for controlling.
[0016] 本実施形態の露光装置 EXは、露光波長を実質的に短くして解像度を向上するとと もに焦点深度を実質的に広くするために液浸法を適用した液浸露光装置であって、 投影光学系 PLと基板 Pとの間に液体 1を供給する液体供給機構 (供給装置) 10と、 基板 P上の液体 1を回収する液体回収機構 20とを備えている。本実施形態において 、液体 1には純水が用いられる。露光装置 EXは、少なくともマスク Mのパターン像を 基板 P上に転写している間、液体供給機構 10から供給した液体 1により投影光学系 PLの投影領域 AR1を含む基板 P上の少なくとも一部に液浸領域 AR2を形成する。 具体的には、露光装置 EXは、投影光学系 PLの先端部の光学素子 2と基板 Pの表 面(露光面)との間に液体 1を満たし、この投影光学系 PLと基板 Pとの間の液体 1及 び投影光学系 PLを介してマスク Mのパターン像を基板 P上に投影し、基板 Pを露光 する。  The exposure apparatus EX of the present embodiment is an immersion exposure apparatus to which the immersion method is applied in order to improve the resolution by substantially shortening the exposure wavelength and increase the depth of focus. A liquid supply mechanism (supply device) 10 for supplying the liquid 1 between the projection optical system PL and the substrate P; and a liquid recovery mechanism 20 for recovering the liquid 1 on the substrate P. In the present embodiment, pure water is used as the liquid 1. The exposure apparatus EX uses the liquid 1 supplied from the liquid supply mechanism 10 on at least a part of the substrate P including the projection area AR1 of the projection optical system PL while transferring at least the pattern image of the mask M onto the substrate P. The immersion area AR2 is formed. Specifically, the exposure apparatus EX fills the liquid 1 between the optical element 2 at the tip of the projection optical system PL and the surface (exposure surface) of the substrate P, The pattern image of the mask M is projected onto the substrate P via the liquid 1 in between and the projection optical system PL, and the substrate P is exposed.
[0017] ここで、本実施形態では、露光装置 EXとしてマスク Mと基板 Pとを走查方向におけ る互いに異なる向き(逆方向)に同期移動しつつマスク Mに形成されたパターンを基 板 Pに露光する走査型露光装置 (所謂スキャニングステツパ)を使用する場合を例に して説明する。以下の説明において、投影光学系 PLの光軸 AXと一致する方向を Z 軸方向、 Z軸方向に垂直な平面内でマスク Mと基板 Pとの同期移動方向(走査方向) を X軸方向、 Z軸方向及び Y軸方向に垂直な方向(非走査方向)を Y軸方向とする。 また、 X軸、 Y軸、及び Z軸まわり方向をそれぞれ、 Θ Χ、 θ Υ、及び Θ Ζ方向とする。 なお、ここでいう「基板」は半導体ウェハ上に感光性材料であるフォトレジストを塗布し たものを含み、「マスク」は基板上に縮小投影されるデバイスパターンを形成されたレ チクルを含む。 Here, in the present embodiment, as the exposure apparatus EX, a pattern formed on the mask M while synchronously moving the mask M and the substrate P in different directions (opposite directions) in the running direction is used as the substrate. An example in which a scanning exposure apparatus that exposes P (a so-called scanning stepper) is used will be described. In the following description, the direction coincident with the optical axis AX of the projection optical system PL is defined as the Z-axis direction, and the synchronous movement direction (scanning direction) between the mask M and the substrate P in a plane perpendicular to the Z-axis direction. Let the direction perpendicular to the X-axis direction, the Z-axis direction and the Y-axis direction (non-scanning direction) be the Y-axis direction. In addition, directions around the X axis, the Y axis, and the Z axis are directions of Θ, θ, and そ れ ぞ れ, respectively. Here, the “substrate” includes a semiconductor wafer coated with a photoresist as a photosensitive material, and the “mask” includes a reticle on which a device pattern to be reduced and projected onto the substrate is formed.
[0018] 照明光学系 ILはマスクステージ MSTに支持されているマスク Μを露光光 ELで照 明するものであり、露光用光源、露光用光源から射出された光束の照度を均一化す るォプティカノレインテグレータ、ォプティカノレインテグレータからの露光光 ELを集光 するコンデンサレンズ、リレーレンズ系、露光光 ELによるマスク Μ上の照明領域をスリ ット状に設定する可変視野絞り等を有している。マスク Μ上の所定の照明領域は照 明光学系 ILにより均一な照度分布の露光光 ELで照明される。照明光学系 ILから射 出される露光光 ELとしては、例えば水銀ランプ力 射出される紫外域の輝線 (g線、 h 線、 i線)及び KrFエキシマレーザ光(波長 248nm)等の遠紫外光(DUV光)や、 Ar Fエキシマレーザ光(波長 193nm)及び Fレーザ光(波長 157nm)等の真空紫外光  The illumination optical system IL illuminates the mask 支持 supported by the mask stage MST with the exposure light EL, and it is an exposure light source and an optical source for equalizing the illuminance of the light beam emitted from the exposure light source. It has a condenser lens that collects the exposure light EL from the canola integrator and the opticanole integrator, a relay lens system, and a variable field stop that sets the illumination area on the mask 露 光 in a slit shape with the exposure light EL. ing. A predetermined illumination area on the mask Μ is illuminated by the illumination optical system IL with exposure light EL having a uniform illuminance distribution. The exposure light EL emitted from the illumination optical system IL is, for example, a bright line (g-line, h-line, i-line) emitted from a mercury lamp or far ultraviolet light (KrF excimer laser light (wavelength: 248 nm)). Vacuum ultraviolet light such as DUV light, Ar F excimer laser light (wavelength 193 nm) and F laser light (wavelength 157 nm)
2  2
(VUV光)などが用いられる。本実施形態においては ArFエキシマレーザ光が用い られる。上述したように、本実施形態における液体 1は純水であって、露光光 ELが Ar Fエキシマレーザ光であっても透過可能である。また、純水は紫外域の輝線 (g線、 h 線、 i線)及び KrFエキシマレーザ光(波長 248nm)等の遠紫外光(DUV光)も透過 可能である。  (VUV light) or the like is used. In the present embodiment, ArF excimer laser light is used. As described above, the liquid 1 in the present embodiment is pure water, and can be transmitted even when the exposure light EL is ArF excimer laser light. Pure water is also capable of transmitting ultraviolet light (g-line, h-line, i-line) and far ultraviolet light (DUV light) such as KrF excimer laser light (wavelength: 248 nm).
[0019] マスクステージ MSTはマスク Mを支持するものであって、投影光学系 PLの光軸 A Xに垂直な平面内、すなわち XY平面内で 2次元移動可能及び θ Z方向に微小回転 可能である。マスクステージ MSTはリニアモータ等のマスクステージ駆動装置 MST Dにより駆動される。マスクステージ駆動装置 MSTDは制御装置 CONTにより制御さ れる。マスクステージ MST上には移動鏡 50が設けられている。また、移動鏡 50に対 向する位置にはレーザ干渉計 51が設けられている。マスクステージ MST上のマスク Mの 2次元方向の位置、及び回転角はレーザ干渉計 51によりリアルタイムで計測さ れ、計測結果は制御装置 CONTに出力される。制御装置 CONTはレーザ干渉計 5 1の計測結果に基づいてマスクステージ駆動装置 MSTDを駆動することでマスクス テージ MSTに支持されているマスク Mの位置決めを行う。 [0019] The mask stage MST supports the mask M, and is two-dimensionally movable in a plane perpendicular to the optical axis AX of the projection optical system PL, that is, in the XY plane, and is capable of minute rotation in the θZ direction. . The mask stage MST is driven by a mask stage driving device MST D such as a linear motor. The mask stage drive MSTD is controlled by the controller CONT. A moving mirror 50 is provided on the mask stage MST. A laser interferometer 51 is provided at a position facing the movable mirror 50. The position and rotation angle of the mask M in the two-dimensional direction on the mask stage MST are measured in real time by the laser interferometer 51, and the measurement results are output to the control device CONT. The controller CONT drives the mask stage driver MSTD based on the measurement results of the laser interferometer 51 to control the mask stage. Position the mask M supported by the stage MST.
[0020] 投影光学系 PLはマスク Mのパターンを所定の投影倍率 βで基板 Ρに投影露光す るものであって、基板 Ρ側の先端部に設けられた光学素子(レンズ) 2を含む複数の光 学素子で構成されており、これら光学素子は鏡筒 ΡΚで支持されている。本実施形態 において、投影光学系 PLは、投影倍率 j3が例えば 1/4あるいは 1/5の縮小系で ある。なお、投影光学系 PLは等倍系及び拡大系のいずれでもよい。また、本実施形 態の投影光学系 PLの先端部の光学素子 2は鏡筒 PKに対して着脱 (交換)可能に設 けられており、光学素子 2には液浸領域 AR2の液体 1が接触する。  The projection optical system PL is for projecting and exposing the pattern of the mask M onto the substrate 投影 at a predetermined projection magnification β, and includes a plurality of optical elements (lenses) 2 provided at the tip of the substrate Ρ. These optical elements are supported by a lens barrel ΡΚ. In the present embodiment, the projection optical system PL is a reduction system whose projection magnification j3 is, for example, 1/4 or 1/5. Note that the projection optical system PL may be either a unity magnification system or an enlargement system. Further, the optical element 2 at the tip of the projection optical system PL of the present embodiment is provided so as to be attachable / detachable (replaceable) to / from the lens barrel PK. Contact.
[0021] 光学素子 2は螢石で形成されてレ、る。螢石は水との親和性が高レ、ので、光学素子 2 の液体接触面 2aのほぼ全面に液体 1を密着させることができる。すなわち、本実施形 態にぉレ、ては光学素子 2の液体接触面 2aとの親和性が高レ、液体 (水) 1を供給する ようにしているので、光学素子 2の液体接触面 2aと液体 1との密着性が高ぐ光学素 子 2と基板 Pとの間の光路を液体 1で確実に満たすことができる。なお、光学素子 2は 水との親和性が高い石英であってもよい。また光学素子 2の液体接触面 2aに親水化 (親液化)処理を施して、液体 1との親和性をより高めるようにしてもよい。また、鏡筒 P Kは、その先端付近が液体 (水) 1に接することになるので、少なくとも先端付近は Ti ( チタン)等の鲭びに対して耐性のある金属で形成される。  The optical element 2 is made of fluorite. Since fluorite has a high affinity for water, the liquid 1 can be brought into close contact with almost the entire liquid contact surface 2a of the optical element 2. That is, in the present embodiment, the liquid (water) 1 having a high affinity with the liquid contact surface 2a of the optical element 2 is supplied, so that the liquid contact surface 2a of the optical element 2 is supplied. The optical path between the optical element 2 and the substrate P, which has high adhesion between the substrate 1 and the liquid 1, can be reliably filled with the liquid 1. Note that the optical element 2 may be quartz having a high affinity for water. Further, the liquid contact surface 2a of the optical element 2 may be subjected to a hydrophilic (lyophilic) treatment to increase the affinity with the liquid 1. In addition, since the lens barrel PK has a portion near the tip in contact with the liquid (water) 1, at least the portion near the tip is formed of a metal such as Ti (titanium) that is resistant to cracks.
[0022] 基板ステージ PSTは基板 Pを支持するものであって、基板ホルダ PHを介して基板 Pを保持する基板テーブル (ステージ) 52と、基板テーブル 52を支持する XYステー ジ 53と、 XYステージ 53を支持するベース 54とを備えている。基板ステージ PSTはリ ニァモータ等の基板ステージ駆動装置 PSTDにより駆動される。基板ステージ駆動 装置 PSTDは制御装置 CONTにより制御される。基板テーブル 52を駆動することに より、基板テーブルに保持されている基板 Pの Z軸方向における位置(フォーカス位 置)、及び Θ X、 θ Y方向における位置が制御される。また、 XYステージ 53を駆動す ることにより、基板 Pの XY方向における位置 (投影光学系 PLの像面と実質的に平行 な方向の位置)が制御される。すなわち、基板テーブル 52は、基板 Pのフォーカス位 置及び傾斜角を制御して基板 Pの表面をオートフォーカス方式、及びオートレベリン グ方式で投影光学系 PLの像面に合わせ込む Zステージとして機能し、 XYステージ 5 3は基板 Pの X軸方向及び Y軸方向における位置決めを行う。なお、基板テーブルと ΧΥステージとを一体的に設けてよいことは言うまでもない。 The substrate stage PST supports the substrate P, and includes a substrate table (stage) 52 for holding the substrate P via the substrate holder PH, an XY stage 53 for supporting the substrate table 52, and an XY stage. And a base 54 for supporting 53. The substrate stage PST is driven by a substrate stage driving device PSTD such as a linear motor. The substrate stage drive PSTD is controlled by the controller CONT. By driving the substrate table 52, the position of the substrate P held on the substrate table in the Z-axis direction (focus position) and the positions in the ΘX and θY directions are controlled. In addition, by driving the XY stage 53, the position of the substrate P in the XY direction (the position in a direction substantially parallel to the image plane of the projection optical system PL) is controlled. That is, the substrate table 52 functions as a Z stage that controls the focus position and the tilt angle of the substrate P to adjust the surface of the substrate P to the image plane of the projection optical system PL by the autofocus method and the autoleveling method. , XY stage 5 3 positions the substrate P in the X-axis direction and the Y-axis direction. Needless to say, the substrate table and the stage may be provided integrally.
[0023] 基板ステージ PST (基板テーブル 52)上には移動鏡 55が設けられている。また、移 動鏡 55に対向する位置にはレーザ干渉計 56が設けられている。基板ステージ PST 上の基板 Ρの 2次元方向の位置、及び回転角はレーザ干渉計 56によりリアルタイム で計測され、計測結果は制御装置 CONTに出力される。制御装置 CONTはレーザ 干渉計 56の計測結果に基づいて基板ステージ駆動装置 PSTDを駆動することで基 板ステージ PSTに支持されている基板 Ρの位置決めを行う。  A movable mirror 55 is provided on the substrate stage PST (substrate table 52). A laser interferometer 56 is provided at a position facing the moving mirror 55. The two-dimensional position and rotation angle of the substrate Ρ on the substrate stage PST are measured in real time by the laser interferometer 56, and the measurement result is output to the control device CONT. The control device CONT drives the substrate stage driving device PSTD based on the measurement result of the laser interferometer 56 to position the substrate supported by the substrate stage PST.
[0024] また、基板ステージ PST (基板テーブル 52)上には基板 Ρを囲むプレート部 30が設 けられている。プレート部 30は基板テーブル 52と一体で設けられており、プレート部 30の内側には凹部 32が形成されている。なお、プレート部 30と基板テーブル 52と は別々に設けられていてもよい。基板 Ρを保持する基板ホルダ ΡΗは凹部 32に配置 されている(図 4参照)。プレート部 30は、凹部 32に配置された基板ホルダ ΡΗに保 持されている基板 Ρの表面 ΡΑとほぼ同じ高さの平坦面(平坦部) 31を有している。  On the substrate stage PST (substrate table 52), a plate portion 30 surrounding the substrate is provided. The plate portion 30 is provided integrally with the substrate table 52, and a concave portion 32 is formed inside the plate portion 30. Note that the plate unit 30 and the substrate table 52 may be provided separately. The substrate holder ΡΗ for holding the substrate Ρ is disposed in the recess 32 (see FIG. 4). The plate portion 30 has a flat surface (flat portion) 31 having substantially the same height as the surface ΡΑ of the substrate Ρ held by the substrate holder ΡΗ arranged in the concave portion 32.
[0025] 液体供給機構 10は所定の液体 1を基板 Ρ上に供給するものであって、液体 1を供 給可能な第 1液体供給部 11及び第 2液体供給部 12と、第 1液体供給部 11に流路を 有する供給管 11 Αを介して接続され、この第 1液体供給部 11から送出された液体 1 を基板 P上に供給する供給口 13Aを有する第 1供給部材 13と、第 2液体供給部 12 に流路を有する供給管 12Aを介して接続され、この第 2液体供給部 12から送出され た液体 1を基板 P上に供給する供給口 14Aを有する第 2供給部材 14とを備えている 。第 1、第 2供給部材 13、 14は基板 Pの表面に近接して配置されており、基板 Pの面 方向において互いに異なる位置に設けられている。具体的には、液体供給機構 10 の第 1供給部材 13は投影領域 AR1に対して走査方向一方側 (一 X側)に設けられ、 第 2供給部材 14は他方側(+ X側)に設けられている。  The liquid supply mechanism 10 supplies a predetermined liquid 1 onto the substrate, and includes a first liquid supply unit 11 and a second liquid supply unit 12 capable of supplying the liquid 1, and a first liquid supply unit A first supply member 13 connected to the unit 11 via a supply pipe 11 having a flow path, and having a supply port 13A for supplying the liquid 1 sent from the first liquid supply unit 11 onto the substrate P; A second supply member connected to the second liquid supply section via a supply pipe having a flow path, and having a supply port for supplying the liquid supplied from the second liquid supply section onto the substrate; It has. The first and second supply members 13 and 14 are arranged close to the surface of the substrate P, and are provided at different positions in the plane direction of the substrate P. Specifically, the first supply member 13 of the liquid supply mechanism 10 is provided on one side (one X side) in the scanning direction with respect to the projection area AR1, and the second supply member 14 is provided on the other side (+ X side). Has been.
[0026] 第 1、第 2液体供給部 11、 12のそれぞれは、液体 1を収容するタンク、及び加圧ポ ンプ等を備えており、供給管 11A、 12A及び供給部材 13、 14のそれぞれを介して 基板 P上に液体 1を供給する。また、第 1、第 2液体供給部 11、 12の液体供給動作は 制御装置 CONTにより制御され、制御装置 CONTは第 1、第 2液体供給部 11、 12 による基板 P上に対する単位時間あたりの液体供給量をそれぞれ独立して制御可能 である。また、第 1、第 2液体供給部 11、 12のそれぞれは液体の温度調整機構を有 しており、装置が収容されるチャンバ内の温度とほぼ同じ温度(例えば 23°C)の液体 1を基板 P上に供給するようになっている。 [0026] Each of the first and second liquid supply units 11, 12 includes a tank for accommodating the liquid 1, a pressurized pump, and the like, and connects the supply pipes 11A, 12A and the supply members 13, 14 respectively. The liquid 1 is supplied onto the substrate P via Further, the liquid supply operation of the first and second liquid supply units 11 and 12 is controlled by a control device CONT, and the control device CONT includes the first and second liquid supply units 11 and 12. , The liquid supply amount per unit time on the substrate P can be independently controlled. In addition, each of the first and second liquid supply units 11 and 12 has a liquid temperature adjusting mechanism, and supplies the liquid 1 at a temperature substantially equal to the temperature in the chamber in which the device is housed (for example, 23 ° C.). It is supplied on the substrate P.
[0027] 液体回収機構 20は基板 P上の液体 1を回収するものであって、基板 Pの表面に近 接して配置された回収口 23A、 24Aを有する第 1、第 2回収部材 23、 24と、この第 1 、第 2回収部材 23、 24に流路を有する回収管 21A、 22Aを介してそれぞれ接続され た第 1、第 2液体回収部 21、 22とを備えている。第 1、第 2液体回収部 21、 22は例え ば真空ポンプ等の吸引装置、及び回収した液体 1を収容するタンク等を備えており、 基板 P上の液体 1を第 1、第 2回収部材 23、 24、及び回収管 21A、 22Aを介して回 収する。第 1、第 2液体回収部 21、 22の液体回収動作は制御装置 CONTにより制御 され、制御装置 CONTは第 1、第 2液体回収部 21、 22による単位時間あたりの液体 回収量を制御可能である。 [0027] The liquid recovery mechanism 20 recovers the liquid 1 on the substrate P, and has first and second recovery members 23, 24 having recovery ports 23A, 24A arranged close to the surface of the substrate P. And first and second liquid recovery sections 21 and 22 connected to the first and second recovery members 23 and 24 via recovery pipes 21A and 22A having flow paths, respectively. The first and second liquid recovery units 21 and 22 are provided with, for example, a suction device such as a vacuum pump and a tank for storing the recovered liquid 1. The first and second recovery members collect the liquid 1 on the substrate P. Collect via 23, 24 and collection tubes 21A, 22A. The liquid recovery operation of the first and second liquid recovery units 21 and 22 is controlled by a controller CONT, and the controller CONT can control the amount of liquid recovered per unit time by the first and second liquid recovery units 21 and 22. is there.
[0028] 図 2は液体供給機構 10及び液体回収機構 20の概略構成を示す平面図である。図 2に示すように、投影光学系 PLの投影領域 AR1は Y軸方向(非走査方向)を長手方 向とするスリット状(矩形状)に設定されており、液体 1が満たされた液浸領域 AR2は 投影領域 AR1を含むように基板 P上の一部に形成される。そして、投影領域 AR1の 液浸領域 AR2を形成するための液体供給機構 10の第 1供給部材 13は投影領域 A R1に対して走査方向一方側 (一 X側)に設けられ、第 2供給部材 14は他方側(+X側 )に設けられている。 FIG. 2 is a plan view showing a schematic configuration of the liquid supply mechanism 10 and the liquid recovery mechanism 20. As shown in FIG. 2, the projection area AR1 of the projection optical system PL is set in a slit shape (rectangular shape) whose longitudinal direction is in the Y-axis direction (non-scanning direction). The area AR2 is formed on a part of the substrate P so as to include the projection area AR1. The first supply member 13 of the liquid supply mechanism 10 for forming the liquid immersion area AR2 of the projection area AR1 is provided on one side (1X side) in the scanning direction with respect to the projection area AR1, and the second supply member 14 is provided on the other side (+ X side).
[0029] 第 1、第 2供給部材 13、 14のそれぞれは平面視略円弧状に形成されており、その 供給口 13A、 14Aの Y軸方向におけるサイズは、少なくとも投影領域 AR1の Y軸方 向におけるサイズより大きくなるように設定されている。そして、平面視略円弧状に形 成されている供給口 13A、 14Aは、走查方向(X軸方向)に関して投影領域 AR1を 挟むように配置されている。液体供給機構 10は、第 1、第 2供給部材 13、 14の供給 口 13A、 14Aを介して投影領域 AR1の両側で液体 1を同時に供給する。  [0029] Each of the first and second supply members 13, 14 is formed in a substantially arc shape in plan view, and the size of the supply ports 13A, 14A in the Y-axis direction is at least the Y-axis direction of the projection area AR1. Is set to be larger than the size in. The supply ports 13A and 14A formed in a substantially arc shape in plan view are arranged so as to sandwich the projection area AR1 in the running direction (X-axis direction). The liquid supply mechanism 10 simultaneously supplies the liquid 1 on both sides of the projection area AR1 via the supply ports 13A and 14A of the first and second supply members 13 and 14.
[0030] 液体回収機構 20の第 1、第 2回収部材 23、 24のそれぞれは基板 Pの表面に向くよ うに円弧状に連続的に形成された回収口 23A、 24Aを有している。そして、互いに 向き合うように配置された第 1、第 2回収部材 23、 24により略円環状の回収口が形成 されている。第 1、第 2回収部材 23、 24それぞれの回収口 23A、 24Aは液体供給機 構 10の第 1、第 2供給部材 13、 14、及び投影領域 AR1を取り囲むように配置されて いる。また、投影領域 AR1を取り囲むように連続的に形成された回収口の内部に複 数の仕切部材 25が設けられている。 Each of the first and second recovery members 23 and 24 of the liquid recovery mechanism 20 has recovery ports 23 A and 24 A continuously formed in an arc shape so as to face the surface of the substrate P. And each other The first and second collection members 23 and 24 arranged to face each other form a substantially annular collection port. The recovery ports 23A and 24A of the first and second recovery members 23 and 24 are arranged so as to surround the first and second supply members 13 and 14 of the liquid supply mechanism 10 and the projection area AR1. Further, a plurality of partition members 25 are provided inside the collection port continuously formed so as to surround the projection area AR1.
[0031] 第 1、第 2供給部材 13、 14の供給口 13A、 14Aから基板 P上に供給された液体 1 は、投影光学系 PLの先端部(光学素子 2)の下端面と基板 Pとの間に濡れ拡がるよう に供給される。また、投影領域 AR1に対して第 1、第 2供給部材 13、 14の外側に流 出した液体 1は、この第 1、第 2供給部材 13、 14より投影領域 AR1に対して外側に配 置されている第 1、第 2回収部材 23、 24の回収口 23A、 24Aより回収される。  [0031] The liquid 1 supplied onto the substrate P from the supply ports 13A and 14A of the first and second supply members 13 and 14 is supplied to the lower end surface of the tip (optical element 2) of the projection optical system PL and the substrate P It is supplied so that it spreads wet between. The liquid 1 flowing out of the first and second supply members 13 and 14 with respect to the projection area AR1 is disposed outside the projection area AR1 with respect to the first and second supply members 13 and 14. The first and second collection members 23 and 24 are collected from the collection ports 23A and 24A.
[0032] 本実施形態において、基板 Pを走査露光する際、走査方向に関して投影領域 AR1 の手前から供給する単位時間あたりの液体供給量が、その反対側で供給する液体 供給量よりも多く設定される。例えば、基板 Pを + X方向に移動しつつ露光処理する 場合、制御装置 CONTは、投影領域 AR1に対して一 X側(すなわち供給口 13A)か らの液体量を + X側(すなわち供給口 14A)からの液体量より多くし、一方、基板 Pを 一 X方向に移動しつつ露光処理する場合、投影領域 AR1に対して + X側からの液体 量を一 X側からの液体量より多くする。また、走査方向に関して、投影領域 AR1の手 前での単位時間あたりの液体回収量力 その反対側での液体回収量よりも少なく設 定される。例えば、基板 Pが +X方向に移動しているときには、投影領域 AR1に対し て +X側(すなわち回収口 24A)からの回収量を- X側(すなわち回収口 23A)力 の 回収量より多くする。  In the present embodiment, when the substrate P is subjected to scanning exposure, the liquid supply amount per unit time supplied before the projection area AR1 in the scanning direction is set to be larger than the liquid supply amount supplied on the opposite side. You. For example, when performing exposure processing while moving the substrate P in the + X direction, the controller CONT controls the liquid amount from one X side (ie, the supply port 13A) to the projection area AR1 on the + X side (ie, the supply port). 14A), while performing exposure processing while moving the substrate P in the 1X direction, the liquid volume from the + X side to the projection area AR1 is larger than the liquid volume from the 1X side. I do. In the scanning direction, the liquid recovery amount per unit time before the projection area AR1 is set to be smaller than the liquid recovery amount on the opposite side. For example, when the substrate P is moving in the + X direction, the recovery amount from the + X side (that is, the recovery port 24A) is larger than the recovery amount of the -X side (that is, the recovery port 23A) with respect to the projection area AR1. I do.
[0033] 図 3は基板ステージ PSTの基板テーブル 52を上方から見た平面図である。平面視 矩形状の基板テーブル 52の互いに垂直な 2つの縁部に移動鏡 55が配置されている 。また、基板テーブル 52のほぼ中央部に平面視円形に凹部 32が形成されており、こ の凹部 32には基板ホルダ PHを支持するための支持部 52aが突設されている。そし て、基板 Pを保持する基板ホルダ PHは、図 4に示すように、支持部 52aに支持されて 基板テーブル 52とは隙間をあけた状態で凹部 32内に配置されている。なお、基板テ 一ブル 52と基板ホルダ PHとの間の隙間は大気圧に設定(開放)されている。そして 、基板 Pの周囲には、基板 Pの表面とほぼ同じ高さの平坦面(平坦部) 31を有するプ レート部(撥液部材) 30が基板テーブル 52と一体で設けられてレ、る。 FIG. 3 is a plan view of the substrate table 52 of the substrate stage PST as viewed from above. A movable mirror 55 is disposed on two rectangular edges of a rectangular substrate table 52 in a plan view. Further, a concave portion 32 is formed in a substantially central portion of the substrate table 52 in a circular shape in a plan view, and a support portion 52a for supporting the substrate holder PH is projected from the concave portion 32. As shown in FIG. 4, the substrate holder PH for holding the substrate P is supported by the support portion 52a and arranged in the recess 32 with a gap from the substrate table 52. The gap between the substrate table 52 and the substrate holder PH is set (opened) to the atmospheric pressure. And On the periphery of the substrate P, a plate portion (liquid-repellent member) 30 having a flat surface (flat portion) 31 having substantially the same height as the surface of the substrate P is provided integrally with the substrate table 52.
[0034] プレート部 30の平坦面 31の 2つのコーナーは幅広になっており、その幅広部の 1 つに、マスク M及び基板 Pを所定位置に対してァライメントする際に使う基準マーク F Mが設けられている。また、基板ステージ PST上の基板 Pの周囲には、照度センサ等 の各種センサも設けられている。なお、本実施形態では、基準マーク FMはプレート 部 30に設けられている力 プレート部 30とは別に基準マーク FMを配置するための 基準マーク部材を基板ステージ PST上に設けてもよい。  [0034] The two corners of the flat surface 31 of the plate portion 30 are wide, and one of the wide portions is provided with a reference mark FM used for aligning the mask M and the substrate P with respect to a predetermined position. Has been. Various sensors such as an illuminance sensor are also provided around the substrate P on the substrate stage PST. In the present embodiment, the reference mark FM may be provided on the substrate stage PST separately from the force plate portion 30 provided on the plate portion 30 for arranging the reference mark FM.
[0035] 基板ホルダ PHは、図 3に示すように、一 Y側の端縁において基板 Pの外周形状に 応じた V字形状の凹部 71を有している。より詳細には、図 5の要部拡大図に示すよう に、基板 Pの外周には当該基板 Pの位置合わせ用に外周を切り欠いてノッチ部(切欠 部) PV力 SV字形状に形成されており、基板ホルダ PHの外周は、基板 Pの内側で外 周輪郭に対して所定距離オフセットした形状に形成された V字形状の凹部 71を有し ている。また、基板ホルダ PHは、基板 Pの外周よりも内側で基板 Pの裏面 PCを保持 する周壁部 (保持部) 33と、この周壁部 33の内側に配置され、基板 Pを保持する複 数の支持部(保持部) 34とを備えている。なお、周壁部 33も凹部 71においては、外 周と同様に V字形状に配置されている。支持部 34は周壁部 33の内側において一様 に配置されている。周壁部 33及び支持部 34は、基板ホルダ PHの一部を構成する 略円板状のベース部 35上に設けられている。支持部 34のそれぞれは断面視台形状 であり、基板 Pはその裏面 PCを複数の支持部 34の上端面 34Aに保持される。  As shown in FIG. 3, the substrate holder PH has a V-shaped concave portion 71 corresponding to the outer peripheral shape of the substrate P at one edge on the Y side. More specifically, as shown in the enlarged view of the main part in FIG. 5, the outer periphery of the substrate P is cut out at the outer periphery for alignment of the substrate P, and a notch portion (notch portion) is formed in a SV-shaped PV force. The outer periphery of the substrate holder PH has a V-shaped concave portion 71 formed inside the substrate P so as to be offset from the outer peripheral contour by a predetermined distance. Further, the substrate holder PH has a peripheral wall portion (holding portion) 33 that holds the back surface PC of the substrate P inside the outer periphery of the substrate P, and a plurality of holders that are disposed inside the peripheral wall portion 33 and hold the substrate P. And a support section (holding section) 34. The peripheral wall portion 33 is also arranged in the concave portion 71 in a V-shape as in the outer periphery. The support portions 34 are uniformly arranged inside the peripheral wall portion 33. The peripheral wall portion 33 and the support portion 34 are provided on a substantially disk-shaped base portion 35 that constitutes a part of the substrate holder PH. Each of the support portions 34 has a trapezoidal shape in cross section, and the back surface PC of the substrate P is held by the upper end surfaces 34A of the plurality of support portions 34.
[0036] 図 4は基板 Pを保持した基板ステージ PSTの要部拡大断面図である。  FIG. 4 is an enlarged sectional view of a main part of the substrate stage PST holding the substrate P.
図 4において、基板テーブル 52 (プレート部 30)は、凹部 32を形成する側壁部 73 を有している。図 5に示すように、一 Y側に位置する側壁部 73は、基板ホルダ PHの凹 部 71に対応して、 V字形状で内周側へ突設された凸部 74を有している。そして、側 壁部 73は、この凸部 74を含めて基板ホルダ PHとギャップ Cを隔てるように、すなわ ち基板ホルダ PHに保持された基板 P (の外周)と平面的に幅 Bの長さで重なる形状 で形成されている。  In FIG. 4, the substrate table 52 (plate portion 30) has a side wall portion 73 forming the concave portion 32. As shown in FIG. 5, the side wall portion 73 located on the Y side has a V-shaped convex portion 74 protruding toward the inner peripheral side corresponding to the concave portion 71 of the substrate holder PH. . The side wall 73 has a length B in a plane with the substrate P (outer periphery) held by the substrate holder PH so as to separate the gap C from the substrate holder PH including the projection 74. It is formed in an overlapping shape.
[0037] 側壁部 73の上面は、平面視が基板 Pの外周(側面 PB)に対してギャップ A (例えば 0. 3— 0. 5mm)を隔てた大きさの円形状で、断面視が基板ホルダ PHに保持された 基板 Pの裏面 PCの外周部において対向する撥液面 72となっている。撥液面 72は、 基板 Pの裏面 PCとの間に、例えば 0· 2mmの隙間があいて非接触となる位置 (すな わち、平坦面 31から基板 Pの厚さ + 0. 2mmの深さの位置)に形成されている。 The top surface of the side wall portion 73 has a gap A (for example, with respect to the outer periphery (side surface PB) of the substrate P in plan view. (0.3-0.5 mm), and has a liquid-repellent surface 72 facing the outer periphery of the back surface PC of the substrate P held by the substrate holder PH in a cross-sectional view. The liquid-repellent surface 72 is in a non-contact position with a gap of, for example, 0.2 mm between the back surface PC of the substrate P and the non-contact surface (i.e., the thickness of the substrate P plus the thickness of 0.2 mm from the flat surface 31). (Depth position).
[0038] 基板 Pの露光面である表面 PAにはフォトレジスト(感光材) 90が塗布されてレ、る。  [0038] A photoresist (photosensitive material) 90 is applied to the surface PA which is the exposed surface of the substrate P.
本実施形態において、感光材 90は ArFエキシマレーザ用の感光材 (例えば、東京 応化工業株式会社製 TARF-P6100)であって撥液性 (撥水性)を有しており、その接 触角は 70 80° 程度である。  In the present embodiment, the photosensitive material 90 is a photosensitive material for ArF excimer laser (for example, TARF-P6100 manufactured by Tokyo Ohka Kogyo Co., Ltd.) and has liquid repellency (water repellency), and its contact angle is 70. It is about 80 °.
また、本実施形態において、基板 Pの側面 PBは撥液処理 (撥水処理)されている。 具体的には、基板 Pの側面 PBにも、撥液性を有する上記感光材 90が塗布されてい る。更に、基板 Pの裏面 PCにも上記感光材 90が塗布されて撥液処理されている。  Further, in the present embodiment, the side surface PB of the substrate P is subjected to a liquid-repellent treatment (water-repellent treatment). Specifically, the photosensitive material 90 having liquid repellency is also applied to the side surface PB of the substrate P. Further, the photosensitive material 90 is also applied to the back surface PC of the substrate P and subjected to liquid repellent treatment.
[0039] そして、基板テーブル 52 (基板ステージ PST)の一部の表面は、撥液処理されて撥 液性となっている。本実施形態において、基板テーブル 52 (プレート部 30)のうち、 平坦面 31、撥液面 72及びこれらの間の段部 36が撥液性を有している。基板テープ ノレ 52 (プレート部 30)の撥液処理としては、例えば、フッ素系樹脂材料あるいはアタリ ル系樹脂材料等の撥液性材料を塗布、あるいは前記撥液性材料力 なる薄膜を貝占 付する。  [0039] Then, a part of the surface of the substrate table 52 (substrate stage PST) is subjected to a liquid-repellent treatment to be liquid-repellent. In the present embodiment, of the substrate table 52 (plate portion 30), the flat surface 31, the lyophobic surface 72, and the step 36 between them have lyophobicity. As the liquid-repellent treatment of the substrate tape groove 52 (plate portion 30), for example, a liquid-repellent material such as a fluororesin material or an atalyl-resin material is applied, or the thin film having the liquid-repellent material is occupied by a shell I do.
撥液性にするための撥液性材料としては液体 1に対して非溶解性の材料が用いら れる。なお、撥液性を有する材料 (フッ素系樹脂など)で基板テーブル 52を形成して あよい。  As the liquid repellent material for making the liquid repellent, a material insoluble in the liquid 1 is used. The substrate table 52 may be formed of a material having liquid repellency (such as a fluorine-based resin).
[0040] 基板ステージ PSTは、段部 36と基板 Pの側面 PBと撥液面 72とで形成され基板 Pの 裏面 PCと対向する部分に連通する第 2空間 39に流入した液体 1を吸引 ·回収する回 装置(吸引装置) 60を備えている。本実施形態において、回収装置 60は、液体 1を 収容可能なタンク 61と、基板テーブル 52内部に設けられ、空間 39とタンク 61とを接 続する流路 62と、タンク 61にバルブ 63を介して接続されたポンプ 64とを備えている 。そして、この流路 62の内壁面にも撥液処理が施されている。  The substrate stage PST sucks the liquid 1 flowing into the second space 39 formed by the step portion 36, the side surface PB of the substrate P, and the liquid repellent surface 72 and communicating with the portion of the substrate P facing the back surface PC. It is equipped with a collecting device (suction device) 60 for collecting. In the present embodiment, the recovery device 60 includes a tank 61 capable of storing the liquid 1, a flow path 62 provided inside the substrate table 52 and connecting the space 39 and the tank 61, and a tank 63 through a valve 63. And a pump 64 connected thereto. The inner wall surface of the flow path 62 is also subjected to a liquid repellent treatment.
[0041] 基板ステージ PSTは、基板ホルダ PHの周壁部 33に囲まれた第 1空間 38を負圧に する吸引装置 40を備えている。吸引装置 40は、基板ホルダ PHのベース部 35上面 に設けられた複数の吸引口 41と、基板ステージ PST外部に設けられた真空ポンプを 含むバキューム部 42と、ベース部 35内部に形成され、複数の吸引口 41のそれぞれ とバキューム部 42とを接続する流路 43とを備えている。吸引口 41はベース部 35上 面のうち支持部 34以外の複数の所定位置にそれぞれ設けられている。吸引装置 40 は、周壁部 33と、ベース部 35と、支持部 34に支持された基板 Pとの間に形成された 第 1空間 38内部のガス(空気)を吸引してこの第 1空間 38を負圧にすることで、支持 部 34に基板 Pを吸着保持する。上記回収装置 60及び吸引装置 40の動作は制御装 置 CONTに制御される。 The substrate stage PST includes a suction device 40 that makes the first space 38 surrounded by the peripheral wall 33 of the substrate holder PH a negative pressure. The suction device 40 is located on the base 35 of the substrate holder PH. A plurality of suction ports 41 provided on the substrate stage, a vacuum section 42 including a vacuum pump provided outside the substrate stage PST, and a connection between each of the plurality of suction ports 41 formed in the base section 35 and the vacuum section 42. And a flow channel 43 that communicates therewith. The suction ports 41 are provided at a plurality of predetermined positions on the upper surface of the base portion 35 other than the support portion 34, respectively. The suction device 40 sucks gas (air) inside the first space 38 formed between the peripheral wall portion 33, the base portion 35, and the substrate P supported by the support portion 34, and The substrate P is sucked and held on the support portion 34 by setting the pressure to a negative pressure. The operations of the collecting device 60 and the suction device 40 are controlled by the control device CONT.
[0042] 次に、上述した構成を有する露光装置 EXにより基板 Pのエッジ領域 Eを液浸露光 する方法について説明する。 Next, a method of performing immersion exposure on the edge region E of the substrate P using the exposure apparatus EX having the above configuration will be described.
図 4に示すように、基板 Pのエッジ領域 Eを液浸露光する際、液浸領域 AR2の液体 1が、基板 Pの表面 PAの一部及びプレート部 30の平坦面 31の一部に配置される。こ のとき、露光対象となるエッジ領域 Eが基板 Pのノッチ部 PVではなレ、位置にある場合 、基板 Pの側面 PB及びこの側面 PBに対向する段部 36は撥液処理されており、また これらの間のギャップも大きくないため、図 4に示すように、液浸領域 AR2の液体 1は ギャップ Aに浸入し難ぐその表面張力によりギャップ Aに流れ込むことがほとんどな レ、。  As shown in FIG. 4, when immersion exposure is performed on the edge region E of the substrate P, the liquid 1 in the immersion region AR2 is disposed on a part of the surface PA of the substrate P and a part of the flat surface 31 of the plate portion 30. Is done. At this time, if the edge region E to be exposed is not at the notch portion PV of the substrate P, but is located at the position, the side surface PB of the substrate P and the step portion 36 facing the side surface PB have been subjected to lyophobic treatment. Also, since the gap between them is not large, as shown in Fig. 4, the liquid 1 in the liquid immersion area AR2 hardly penetrates into the gap A, and almost always flows into the gap A due to its surface tension.
[0043] 一方、露光対象となるエッジ領域 Eが基板 Pのノッチ部 PVにある場合、基板 Pの外 周とプレート部 30の段部 36との間のギャップは、例えば 2mm程度に大きくなるため 、図 6に図 5の A— A線視断面として示すように、これらの間の第 2空間 39に液体 1が 浸入する。このとき、基板 Pの裏面 PCと撥液面 72との双方が撥液性を有しており、ま た裏面 PCと撥液面 72との間の隙間が微小であるため、第 2空間 39に浸入した液体 1はこの隙間に浸入し難ぐその表面張力により隙間から凹部 32に流れ込むことがほ とんどない。そして、第 2空間 39に流入した液体 1は、例えば基板交換時等、吸引に 伴う振動が基板 Pに伝わっても支障を来さないタイミングで、回収装置 60により流路 6 2を介してタンク 61に吸引'回収される(図 4参照)。タンク 61には排出流路 61Aが設 けられており、液体 1が所定量溜まったら排出流路 61 Aより排出される。  On the other hand, when the edge region E to be exposed is at the notch portion PV of the substrate P, the gap between the outer periphery of the substrate P and the step portion 36 of the plate portion 30 becomes large, for example, to about 2 mm. 6, the liquid 1 penetrates into the second space 39 between them as shown in FIG. At this time, both the rear surface PC of the substrate P and the liquid repellent surface 72 have liquid repellency, and the gap between the rear surface PC and the liquid repellent surface 72 is very small. The liquid 1 that has penetrated into the gap rarely flows into the recess 32 from the gap due to the surface tension that makes it difficult to enter the gap. The liquid 1 that has flowed into the second space 39 is stored in the tank via the flow path 62 by the collection device 60 at a timing that does not hinder the vibrations caused by suction from being transmitted to the substrate P, for example, when replacing the substrate. Suctioned and collected at 61 (see Figure 4). The tank 61 is provided with a discharge channel 61A, and when a predetermined amount of the liquid 1 is accumulated, the liquid 1 is discharged from the discharge channel 61A.
[0044] このように、本実施の形態では、基板 Pの裏面 PCと対向してプレート部 30の撥液面 72が配置されているので、基板 Pのエッジ領域 Eを露光する場合にも、液体 1が基板 Pとホルダ PHとの間に回り込むことを防止して、投影光学系 PLの下に液体 1を良好 に保持しつつ液浸露光できる。特に本実施の形態では、基板ホルダ PH及びプレー ト部 30が基板 Pのノッチ部 PVに応じた凹部 71、凸部 74を有しているので、位置合わ せ用のノッチ部 PVが形成された基板 Pを用いる場合、ノッチ部 PVにおいても液体 1 の回り込みを防止して良好な液浸露光を実施できる。 As described above, in the present embodiment, the lyophobic surface of the plate portion 30 faces the back surface PC of the substrate P. 72, the liquid 1 is prevented from flowing between the substrate P and the holder PH even when exposing the edge area E of the substrate P, and the liquid 1 is placed under the projection optical system PL. Immersion lithography can be performed while maintaining good conditions. Particularly, in the present embodiment, since the substrate holder PH and the plate portion 30 have the concave portion 71 and the convex portion 74 corresponding to the notch portion PV of the substrate P, the notch portion PV for alignment is formed. When the substrate P is used, the liquid 1 can be prevented from flowing around even at the notch portion PV, and good immersion exposure can be performed.
[0045] また、本実施の形態では、撥液面 72が基板 Pと対向しているため、基板 Pが遮光部 材として作用し、撥液面 72の基板 Pとの対向部に露光光が到達しない。そのため、撥 液面 72の撥液性が露光光の照射により損なわれることを防ぐことができ、液体 1の浸 入阻止状態を長期に亘つて維持することが可能になる。さらに、本実施の形態では、 撥液面 72を基板 Pの裏面 PCと非接触としてレ、るので、接触させた場合に生じる基板 Pの変形や、プレート部 30を介して基板 Pに伝わる熱や振動等の悪影響を防ぐことが できる。 In the present embodiment, since the liquid-repellent surface 72 faces the substrate P, the substrate P acts as a light shielding member, and the exposure light is applied to the liquid-repellent surface 72 facing the substrate P. Do not reach. Therefore, it is possible to prevent the liquid repellency of the liquid repellent surface 72 from being impaired by the irradiation of the exposure light, and it is possible to maintain the liquid 1 intrusion prevention state for a long time. Further, in the present embodiment, since the liquid-repellent surface 72 is not in contact with the back surface PC of the substrate P, the deformation of the substrate P caused by the contact, and the heat transmitted to the substrate P via the plate portion 30 It can prevent adverse effects such as vibration and vibration.
また、このときプレート部 30の平坦面 31も撥液処理されているので、液浸領域 AR2 を形成する液体 1のプレート部 30外側への過剰な濡れ拡がりが防止され、液浸領域 AR2を良好に形成可能であるとともに、液体 1の流出や飛散等の不都合を防止する こと力 Sできる。  Also, at this time, since the flat surface 31 of the plate portion 30 is also subjected to the lyophobic treatment, the liquid 1 forming the liquid immersion region AR2 is prevented from being excessively spread to the outside of the plate portion 30, and the liquid immersion region AR2 is improved. And can prevent inconveniences such as outflow and scattering of the liquid 1.
しかも、本実施の形態では、第 2空間 39に浸入した液体 1を回収装置 60で回収す るため、基板 Pの交換時等に第 2空間 39に存在する液体が凹部 32や基板ホルダ P Hに飛散することを防止できる。  Moreover, in the present embodiment, since the liquid 1 that has entered the second space 39 is collected by the collecting device 60, the liquid existing in the second space 39 is transferred to the concave portion 32 and the substrate holder PH when the substrate P is replaced. Spattering can be prevented.
[0046] なお、上記第 1実施形態では、基板 Pのノッチ部 PVに合わせて基板ホルダ PH及 びプレート部 30が V字形状の凹部及び凸部を有する構成としたが、これに限定され るものではなぐ図 7に示すように、基板 Pのノッチ部 PVよりも内側にプレート部 30の 側壁部 73を平面視円形状で突出させ、この側壁部 74とギャップ Cを隔てる外径の円 形状の基板ホルダ PHを設ける構成としてもよい。 In the first embodiment, the substrate holder PH and the plate portion 30 have the V-shaped concave and convex portions in accordance with the notch portion PV of the substrate P. However, the present invention is not limited to this. As shown in Fig. 7, the side wall 73 of the plate portion 30 projects in a circular shape in plan view from the notch portion PV of the substrate P, and a circular shape with an outer diameter separating the side wall portion 74 and the gap C. The substrate holder PH may be provided.
この場合、ノッチ部の位置、有無に拘わらずに基板 Pを基板ホルダ PHに保持させ て、裏面側への液体の回り込みを防ぐことが可能になり、汎用性を高めることができる [0047] また、上記第 1実施形態では、撥液面 72が基板 Pの裏面 PCに対して非接触とする 構成としたが、必ずしも非接触に限られず、接触状態であってもよい。 In this case, the substrate P can be held by the substrate holder PH irrespective of the position and presence of the notch, and it is possible to prevent the liquid from flowing to the back surface side, thereby improving versatility. In the first embodiment, the liquid repellent surface 72 is configured to be in non-contact with the back surface PC of the substrate P. However, the configuration is not limited to non-contact and may be in a contact state.
この場合、基板 Pの変形や、プレート部 30を介して基板 Pに伝わる熱や振動等の悪 影響が生じる虞があるものの、基板 Pの裏面側への液体の回り込みを防止することが できる。  In this case, it is possible to prevent the liquid from flowing to the rear surface side of the substrate P, although the deformation of the substrate P and adverse effects such as heat and vibration transmitted to the substrate P via the plate portion 30 may occur.
[0048] (第 2実施形態) (Second Embodiment)
図 8は、本発明のステージ装置の第 2の実施の形態を示す図である。  FIG. 8 is a diagram showing a second embodiment of the stage device of the present invention.
第 1実施形態では基板 Pの裏面と対向する撥液面 72により液体の浸入を阻止する 構成としたが、第 2実施形態では基板 Pに当接する弾性部材により液体の浸入を阻 止する構成を採っている。  In the first embodiment, the liquid intrusion is prevented by the liquid-repellent surface 72 facing the rear surface of the substrate P. However, in the second embodiment, the liquid intrusion is prevented by an elastic member abutting on the substrate P. I am taking it.
以下、図 8を参照して説明する。  Hereinafter, description will be made with reference to FIG.
なお、図 8において、図 4等で示した第 1実施形態の構成要素と同一の要素につい ては同一符号を付し、その説明を省略する。  In FIG. 8, the same components as those of the first embodiment shown in FIG. 4 and the like are denoted by the same reference numerals, and description thereof will be omitted.
[0049] この図に示すように、基板ホルダ PHの周壁部 33よりも外側で基板 Pの外周部と対 向する位置には、断面矩形の嵌合溝 75が形成されている。嵌合溝 75は基板ホルダ PHに保持される基板 Pの外周よりも内側に沿って、且つ図 9に示すように、基板 Pの ノッチ部 PVに対応する位置ではノッチ部 PVよりも内側に湾曲するように形成されて いる。この嵌合溝 75には、フッ素ゴム等のケミカルクリーンの観点から好ましぐまた 撥液性を有する弾性材料で形成されたシール部材 (弾性部材) 76が圧入状態で嵌 合'固定されている。 [0049] As shown in this figure, a fitting groove 75 having a rectangular cross section is formed outside the peripheral wall portion 33 of the substrate holder PH and at a position facing the outer peripheral portion of the substrate P. The mating groove 75 is curved inward from the outer periphery of the substrate P held by the substrate holder PH and, as shown in FIG. 9, at a position corresponding to the notch PV of the substrate P, inwardly of the notch PV. It is formed so that. A sealing member (elastic member) 76 made of an elastic material having liquid repellency, which is preferable from the viewpoint of chemical clean such as fluoro rubber, is fitted and fixed in the fitting groove 75 in a press-fit state. .
[0050] シール部材 76には、基板 Pの外周側へ向力 斜め上方に延びる弾性部 77が設け られている。弾性部 77の上端は、周壁部 33及び支持部 34の上端面よりも僅かに突 出しており(図 8中、二点鎖線で示す)、基板ホルダ PHに基板 Pが保持された際には 基板 Pの裏面 PCに弾性変形して当接する。この弾性部 77の弾性変形による基板 P への付勢力(弾性復元力)は、基板 Pに変形を生じさせず、且つ液体の浸入を阻止 する液密状態となる値に設定されてレ、る。  The seal member 76 is provided with an elastic portion 77 that extends diagonally upward toward the outer periphery of the substrate P. The upper end of the elastic portion 77 slightly protrudes from the upper end surfaces of the peripheral wall portion 33 and the support portion 34 (indicated by a two-dot chain line in FIG. 8), and when the substrate P is held by the substrate holder PH. It is elastically deformed and contacts the rear surface PC of the substrate P. The urging force (elastic restoring force) on the substrate P due to the elastic deformation of the elastic portion 77 is set to a value that does not cause the substrate P to be deformed and is in a liquid-tight state that prevents liquid from entering. .
また、本実施形態における回収装置 60は、シール部材 76と基板 Pとの当接部の外 側の空間 39 (に浸入した液体)を吸引する。 他の構成は、上記第 1実施形態と同様である。 Further, the collection device 60 in the present embodiment sucks the space 39 (the liquid that has entered the outside) of the contact portion between the seal member 76 and the substrate P. Other configurations are the same as those in the first embodiment.
[0051] 本実施の形態では、第 2空間 39に液体 1が浸入した場合でも、基板 Pの裏面 PCと シール部材 76の弾性部 77とが液密に当接しているので、これらの間力 液体が浸 入することを防ぐことができる。特に、シール部材 76が撥液性を有しているため、効 果的に液体の浸入を阻止することができる。また、第 2空間 39に浸入した液体は回 収装置 60により吸引 ·回収されるため、基板回収時等に液体が飛散したり、第 2空間 39の液圧が高くなつてしまうことを防止できる。  In the present embodiment, even when the liquid 1 enters the second space 39, the back surface PC of the substrate P and the elastic portion 77 of the seal member 76 are in liquid-tight contact with each other. Liquids can be prevented from entering. In particular, since the seal member 76 has liquid repellency, it is possible to effectively prevent liquid from entering. In addition, since the liquid that has entered the second space 39 is suctioned and collected by the recovery device 60, it is possible to prevent the liquid from being scattered at the time of collecting the substrate or the like and the liquid pressure in the second space 39 being increased. .
[0052] なお、本実施の形態では、弾性部 77が基板 Pの裏面 PCに当接することで液体の 浸入を阻止しているため、基板 Pの裏面 PCは必ずしも撥液性である必要はないが、 経時変化等により弾性部 77の付勢力が変動する可能性もあるため、裏面 PCも撥液 性を有する構成であることが好ましい。また、上記第 2実施形態では、嵌合溝 75及び シール部材 76を図 9に示したように、基板 Pのノッチ部 PVに合わせて湾曲して配置 する構成としたが、図 9中に二点鎖線で示すように、基板 Pのノッチ部 PVよりも内側に 円形状に配置する構成としてもよい。  In the present embodiment, since the elastic portion 77 is in contact with the back surface PC of the substrate P to prevent liquid from entering, the back surface PC of the substrate P is not necessarily required to be lyophobic. However, since the biasing force of the elastic portion 77 may fluctuate due to a change over time or the like, it is preferable that the rear surface PC also has a configuration having liquid repellency. Further, in the second embodiment, the fitting groove 75 and the sealing member 76 are arranged to be curved in accordance with the notch portion PV of the substrate P as shown in FIG. As shown by the dashed line, the substrate P may be arranged in a circular shape inside the notch portion PV.
この場合、ノッチ部の位置、有無に拘わらずに基板 Pを基板ホルダ PHに保持させ て、裏面側への液体の回り込みを防ぐことが可能になり、汎用性を高めることができる  In this case, the substrate P can be held by the substrate holder PH irrespective of the position and presence of the notch, and it is possible to prevent the liquid from flowing to the back surface side, thereby improving versatility.
[0053] また、上記第 2実施形態では、基板ホルダ PHにシール部材 76を設ける構成とした 力 図 10に示すように、プレート部 30に設ける構成としてもよい。プレート部 30にシ 一ル部材 76を固定する構成としては、プレート部 30の上面に開口する嵌合溝 75に シール部材 76を嵌合させ、プレート部 30の上面にプレート部 30との間でシール部 材 76を挟持する挟持部材 78を設けることができる。この場合、プレート部 30の裏面 側から取付ネジ等の締結部材 79で挟持部材 78を固定すればよい。なお、挟持部材 78の上面 78aは、基板 Pの表面 PAと略面一にして、さらに撥液性を付与することが 好ましい。 Further, in the second embodiment, a force in which the seal member 76 is provided on the substrate holder PH may be provided on the plate portion 30 as shown in FIG. As a configuration for fixing the seal member 76 to the plate portion 30, the seal member 76 is fitted into a fitting groove 75 opened on the upper surface of the plate portion 30, and the seal member 76 is fixed to the upper surface of the plate portion 30. A holding member 78 for holding the seal member 76 can be provided. In this case, the holding member 78 may be fixed from the back surface side of the plate portion 30 with a fastening member 79 such as a mounting screw. It is preferable that the upper surface 78a of the sandwiching member 78 be substantially flush with the surface PA of the substrate P to further impart liquid repellency.
[0054] なお、上記実施の形態におけるプレート部 30の撥液面 72は、必ずしも全面が撥液 性を有している必要はなぐ少なくとも基板 Pの裏面 PCと対向する位置が撥液性を有 していればよい。またプレート部 30の平坦面 31においても、全面が撥液性を有して いる必要はなぐ少なくとも液体回収機構 20の第 1、第 2回収部材 23、 24と対向する 位置が撥液性を有してレ、ればよレ、。 The liquid-repellent surface 72 of the plate portion 30 in the above-described embodiment does not necessarily have to have liquid-repellency on the entire surface, and at least the position facing the rear surface PC of the substrate P has liquid-repellency. Just do it. The entire surface of the flat surface 31 of the plate portion 30 also has liquid repellency. It is not necessary that at least the positions of the liquid recovery mechanism 20 facing the first and second recovery members 23 and 24 have liquid repellency.
[0055] また、上記実施形態では、基板 Pの表面 PA、側面 PB、及び裏面 PCの全面に撥液 処理のために感光材 90が塗布されている力 S、ギャップ Aを形成する領域、すなわち 基板 Pの側面 PBと、基板 Pの裏面 PCのうちプレート部 30の撥液面 72に対向する領 域のみを撥液処理する構成であってもよレ、。 Further, in the above embodiment, the force S in which the photosensitive material 90 is applied for the liquid-repellent treatment to the entire surface of the front surface PA, the side surface PB, and the rear surface PC of the substrate P, and the region where the gap A is formed, The liquid repellent treatment may be performed only on a region of the side surface PB of the substrate P and the back surface PC of the substrate P facing the liquid repellent surface 72 of the plate portion 30.
基板 Pの側面 PB及び裏面 PCの撥液処理としては、撥液性を有する感光材 90を塗 布しているが、側面 PBや裏面 PCには感光材 90以外の撥液性 (撥水性)を有する所 定の材料を塗布するようにしてもよい。例えば、基板 Pの露光面である表面 PAに塗 布された感光材 90の上層にトップコート層と呼ばれる保護層(液体力も感光材 90を 保護する膜)を塗布する場合があるが、このトップコート層の形成材料 (例えばフッ素 系樹脂材料)は、例えば接触角 110° 程度で撥液性 (撥水性)を有する。従って、基 板 Pの側面 PBや裏面 PCにこのトップコート層形成材料を塗布するようにしてもよい。 もちろん、感光材 90やトップコート層形成用材料以外の撥液性を有する材料を塗布 するようにしてもよい。  For the liquid repellent treatment of the side surface PB and the back surface PC of the substrate P, a photosensitive material 90 having liquid repellency is applied. However, the liquid repellency (water repellency) other than the photosensitive material 90 is applied to the side surface PB and the back surface PC. Alternatively, a predetermined material having the following may be applied. For example, a protective layer called a top coat layer (a film that also protects the photosensitive material 90 with a liquid force) may be applied on the photosensitive material 90 coated on the surface PA, which is the exposed surface of the substrate P. The material for forming the coat layer (for example, a fluorine-based resin material) has liquid repellency (water repellency) at a contact angle of about 110 °, for example. Therefore, the top coat layer forming material may be applied to the side surface PB or the back surface PC of the substrate P. Of course, a material having liquid repellency other than the photosensitive material 90 and the material for forming the top coat layer may be applied.
[0056] 同様に、基板ステージ PSTや基板ホルダ PHの撥液処理として、フッ素系樹脂材料 やアクリル系樹脂材料を塗布するものとして説明したが、上記感光材ゃトップコート層 形成材料を基板ステージ PSTや基板ホルダ PHに塗布するようにしてもよいし、逆に 、基板 Pの側面 PBや裏面 PCに、基板ステージ PSTや基板ホルダ PHの撥液処理に 用レ、た材料を塗布するようにしてもょレ、。  Similarly, the lyophobic treatment of the substrate stage PST and the substrate holder PH has been described as applying a fluorinated resin material or an acrylic resin material. Or the substrate holder PH, or conversely, apply the material used for the liquid repellent treatment of the substrate stage PST and the substrate holder PH to the side surface PB and the back surface PC of the substrate P. Moore.
上記トップコート層は、液浸領域 AR2の液体 1が感光材 90に浸透するのを防止す るために設けられる場合が多いが、例えばトップコート層上に液体 1の付着跡 (所謂ゥ オーターマーク)が形成されても、液浸露光後にこのトップコート層を除去することによ り、ウォーターマークをトップコート層とともに除去した後に現像処理等の所定のプロ セス処理を行うことができる。ここで、トップコート層が例えばフッ素系樹脂材料から形 成されている場合、フッ素系溶剤を使って除去することができる。これにより、ウォータ 一マークを除去するための装置 (例えばウォーターマーク除去用基板洗浄装置)等 が不要となり、トップコート層を溶剤で除去するといつた簡易な構成で、ウォーターマ ークを除去した後に所定のプロセス処理を良好に行うことができる。 The top coat layer is often provided to prevent the liquid 1 in the liquid immersion area AR2 from penetrating into the photosensitive material 90. For example, a trace of adhesion of the liquid 1 on the top coat layer (a so-called ゥEven if ()) is formed, by removing this top coat layer after the liquid immersion exposure, a predetermined process such as a development process can be performed after removing the watermark together with the top coat layer. Here, when the top coat layer is formed of, for example, a fluorine-based resin material, it can be removed using a fluorine-based solvent. This eliminates the need for a device for removing the water mark (for example, a substrate cleaning device for removing the watermark), and has a simple configuration such as removing the top coat layer with a solvent. The predetermined process can be satisfactorily performed after the removal of the mark.
[0057] また、上記実施形態では、基板 Pの位置合わせ用の切欠部として平面視 V字形状 のノッチ部が設けられるものとして説明した力 半径方向と直交する方向に基板 Pが 切り欠かれる、いわゆるオリフラ (オリエンテーション 'フラット)が設けられる基板にも 適用でき、さらに位置合わせ用の切欠部が形成されていない基板にも適用できること は言うまでもない。  Further, in the above-described embodiment, the substrate P is cut out in a direction orthogonal to the radial direction of the force described as the notch having a V-shape in plan view is provided as a notch for positioning the substrate P. Needless to say, the present invention can be applied to a substrate provided with a so-called orientation flat (orientation 'flat), and further to a substrate having no notch for alignment.
[0058] 上記各実施形態において、液体 1は純水により構成されている。純水は、半導体製 造工場等で容易に大量に入手できるとともに、基板 P上のフォトレジストや光学素子( レンズ)等に対する悪影響がない利点がある。また、純水は環境に対する悪影響がな レヽとともに、不純物の含有量が極めて低いため、基板 Pの表面、及び投影光学系 PL の先端面に設けられている光学素子の表面を洗浄する作用も期待できる。  In each of the above embodiments, the liquid 1 is composed of pure water. Pure water has the advantage that it can be easily obtained in large quantities at a semiconductor manufacturing plant or the like, and that there is no adverse effect on the photoresist on the substrate P, optical elements (lenses), and the like. In addition, pure water has no adverse effect on the environment and has an extremely low impurity content. Therefore, it is expected that the surface of the substrate P and the surface of the optical element provided on the front end surface of the projection optical system PL are also cleaned. it can.
なお、液体 1として PFPE (過フッ化ポリエーテル)を用いてもょレ、。  Note that PFPE (perfluorinated polyether) may be used as the liquid 1.
[0059] そして、波長が 193nm程度の露光光 ELに対する純水(水)の屈折率 nはほぼ 1. 4 4であるため、露光光 ELの光源として ArFエキシマレーザ光(波長 193nm)を用いた 場合、基板 P上では l/n、すなわち約 134nmに短波長化されて高い解像度が得ら れる。更に、焦点深度は空気中に比べて約 n倍、すなわち約 1. 44倍に拡大されるた め、空気中で使用する場合と同程度の焦点深度が確保できればよい場合には、投 影光学系 PLの開口数をより増加させることができ、この点でも解像度が向上する。  Since the refractive index n of pure water (water) with respect to the exposure light EL having a wavelength of about 193 nm is approximately 1.44, ArF excimer laser light (wavelength 193 nm) was used as the light source of the exposure light EL. In this case, the wavelength is shortened to 1 / n, that is, about 134 nm on the substrate P, and a high resolution is obtained. Furthermore, since the depth of focus is expanded to about n times, that is, about 1.44 times as compared to that in the air, if it is sufficient to secure the same depth of focus as when using it in the air, the projection optics The numerical aperture of the system PL can be further increased, and the resolution is improved in this respect as well.
[0060] 本実施形態では、投影光学系 PLの先端に光学素子 2が取り付けられており、この レンズにより投影光学系 PLの光学特性、例えば収差 (球面収差、コマ収差等)の調 整を行うことができる。なお、投影光学系 PLの先端に取り付ける光学素子としては、 投影光学系 PLの光学特性の調整に用いる光学プレートであってもよい。あるいは露 光光 ELを透過可能な平行平面板であってもよレ、。  In the present embodiment, the optical element 2 is attached to the tip of the projection optical system PL, and the lens is used to adjust the optical characteristics of the projection optical system PL, for example, aberrations (spherical aberration, coma, etc.). be able to. Note that the optical element attached to the tip of the projection optical system PL may be an optical plate used for adjusting the optical characteristics of the projection optical system PL. Alternatively, it may be a plane-parallel plate that can transmit EL light.
[0061] なお、液体 1の流れによって生じる投影光学系 PLの先端の光学素子と基板 Pとの 間の圧力が大きい場合には、その光学素子を交換可能とするのではなぐその圧力 によって光学素子が動力、ないように堅固に固定してもよい。  When the pressure between the optical element at the tip of the projection optical system PL and the substrate P caused by the flow of the liquid 1 is large, the optical element is not replaced by the pressure, but the optical element is not replaced. However, it may be fixed firmly so as not to have power.
また、本実施形態では、投影光学系 PLと基板 P表面との間は液体 1で満たされて レ、る構成であるが、例えば基板 Pの表面に平行平面板からなるカバーガラスを取り付 けた状態で液体 1を満たす構成であってもよい。 Further, in the present embodiment, the space between the projection optical system PL and the surface of the substrate P is filled with the liquid 1, but, for example, a cover glass made of a parallel flat plate is attached to the surface of the substrate P. A configuration in which the liquid 1 is filled in a dashed state may be employed.
[0062] なお、本実施形態の液体 1は水であるが水以外の液体であってもよい。例えば露光 光 ELの光源が Fレーザである場合、この Fレーザ光は水を透過しないので、液体 1 [0062] The liquid 1 of the present embodiment is water, but may be a liquid other than water. For example, if the light source of the exposure light EL is an F laser, this F laser light does not pass through water, so the liquid 1
2 2  twenty two
としては Fレーザ光を透過可能な例えばフッ素系オイル等のフッ素系流体であって  Is a fluorine-based fluid such as a fluorine-based oil that can transmit F laser light.
2  2
あよい。  Oh good.
また、液体 1としては、その他にも、露光光 ELに対する透過性があってできるだけ 屈折率が高ぐ投影光学系 PLや基板 P表面に塗布されているフォトレジストに対して 安定なもの(例えばセダー油)を用いることも可能である。この場合も表面処理は用い る液体 1の極性に応じて行われる。  In addition, as the liquid 1, other liquids which are transparent to the exposure light EL and have a refractive index as high as possible and which are stable to the photoresist applied to the surface of the substrate P or the substrate P (for example, Cedar) Oil) can also be used. Also in this case, the surface treatment is performed according to the polarity of the liquid 1 to be used.
[0063] なお、上記各実施形態の基板 Pとしては、半導体デバイス製造用の半導体ウェハ のみならず、ディスプレイデバイス用のガラス基板や、薄膜磁気ヘッド用のセラミック ウェハ、あるいは露光装置で用いられるマスクまたはレチクルの原版 (合成石英、シリ コンウエノヽ)等が適用される。  As the substrate P in each of the above embodiments, not only a semiconductor wafer for manufacturing a semiconductor device, but also a glass substrate for a display device, a ceramic wafer for a thin-film magnetic head, or a mask or a mask used in an exposure apparatus. The original reticle (synthetic quartz, silicon wafer) etc. is applied.
[0064] 露光装置 EXとしては、マスク Mと基板 Pとを同期移動してマスク Mのパターンを走 查露光するステップ 'アンド'スキャン方式の走査型露光装置 (スキャニングステツパ) の他に、マスク Mと基板 Pとを静止した状態でマスク Mのパターンを一括露光し、基 板 Pを順次ステップ移動させるステップ'アンド'リピート方式の投影露光装置 (ステツ パ)にも適用すること力 Sできる。また、本発明は基板 P上で少なくとも 2つのパターンを 部分的に重ねて転写するステップ ·アンド'ステイッチ方式の露光装置にも適用できる  The exposure apparatus EX includes a step of scanning and exposing the pattern of the mask M by synchronously moving the mask M and the substrate P. In addition to the scanning type exposure apparatus (scanning stepper) of the 'and' scan method, The method can be applied to a step-and-repeat type projection exposure apparatus (stepper) in which the pattern of the mask M is exposed collectively while the M and the substrate P are stationary, and the substrate P is sequentially moved step by step. In addition, the present invention can be applied to a step-and-stitch type exposure apparatus that transfers at least two patterns on the substrate P while partially overlapping each other.
[0065] また、本発明は、特開平 10 - 163099号公報、特開平 10 - 214783号公報、特表 2 000—505958号公報などに開示されているツインステージ型の露光装置にも適用 できる。 The present invention can also be applied to a twin-stage type exposure apparatus disclosed in JP-A-10-163099, JP-A-10-214783, and JP-T-2000-505958.
[0066] 露光装置 EXの種類としては、基板 Pに半導体素子パターンを露光する半導体素 子製造用の露光装置に限られず、液晶表示素子製造用又はディスプレイ製造用の 露光装置や、薄膜磁気ヘッド、撮像素子(CCD)あるいはレチクル又はマスクなどを 製造するための露光装置などにも広く適用できる。  The type of the exposure apparatus EX is not limited to an exposure apparatus for manufacturing a semiconductor element that exposes a substrate P with a semiconductor element pattern, but may be an exposure apparatus for manufacturing a liquid crystal display element or a display, a thin-film magnetic head, It can be widely applied to an exposure device for manufacturing an image pickup device (CCD), a reticle or a mask, and the like.
[0067] 基板ステージ PSTやマスクステージ MSTにリニアモータ(USP No. 5, 623, 853また は USP No. 5,528,118参照)を用いる場合は、エアベアリングを用いたエア浮上型お よびローレンツ力またはリアクタンス力を用いた磁気浮上型のどちらを用いてもよい。 また、各ステージ PST、 MSTは、ガイドに沿って移動するタイプでもよぐガイドを設 けないガイドレスタイプであってもよレ、。 [0067] A linear motor (USP No. 5, 623, 853 or If USP No. 5,528,118 is used, either an air levitation type using an air bearing or a magnetic levitation type using Lorentz force or reactance force may be used. In addition, each stage PST and MST can be either a type that moves along the guide or a guideless type that does not have a guide.
[0068] 各ステージ PST、 MSTの駆動機構としては、二次元に磁石を配置した磁石ュニッ トと、二次元にコイルを配置した電機子ユニットとを対向させ電磁力により各ステージ PST、 MSTを駆動する平面モータを用いてもよい。この場合、磁石ユニットと電機子 ユニットとのいずれか一方をステージ PST、 MSTに接続し、磁石ユニットと電機子ュ ニットとの他方をステージ PST、 MSTの移動面側に設ければよい。  [0068] As a drive mechanism of each stage PST, MST, a magnet unit having a two-dimensionally arranged magnet and an armature unit having a two-dimensionally arranged coil are opposed to each other to drive each stage PST, MST by electromagnetic force. Alternatively, a flat motor may be used. In this case, one of the magnet unit and the armature unit may be connected to the stages PST and MST, and the other of the magnet unit and the armature unit may be provided on the moving surface side of the stages PST and MST.
[0069] 基板ステージ PSTの移動により発生する反力は、投影光学系 PLに伝わらないよう に、特開平 8—166475号公報(USP No. 5,528,118)に記載されているように、フレー ム部材を用いて機械的に床(大地)に逃がしてもよレ、。  As described in JP-A-8-166475 (USP No. 5,528,118), a reaction force generated by the movement of the substrate stage PST is not transmitted to the projection optical system PL. It may be possible to mechanically escape to the floor (ground) using frame members.
マスクステージ MSTの移動により発生する反力は、投影光学系 PLに伝わらないよ うに、特開平 8-330224号公報(USP No. 5,874,820)に記載されているように、フレ 一ム部材を用いて機械的に床(大地)に逃がしてもよい。また、特開平 8— 63231号 公報(USP No. 6,255,796)に記載されているように運動量保存則を用いて反カを処 理してもよい。  As described in Japanese Patent Application Laid-Open No. 8-330224 (USP No. 5,874,820), a reaction force generated by the movement of the mask stage MST is not transmitted to the projection optical system PL by using a frame member. You may mechanically escape to the floor (ground). Also, as described in Japanese Patent Application Laid-Open No. 8-63231 (USP No. 6,255,796), anti-power may be processed using the law of conservation of momentum.
[0070] 本願実施形態の露光装置 EXは、本願特許請求の範囲に挙げられた各構成要素 を含む各種サブシステムを、所定の機械的精度、電気的精度、光学的精度を保つよ うに、組み立てることで製造される。これら各種精度を確保するために、この組み立て の前後には、各種光学系については光学的精度を達成するための調整、各種機械 系につレ、ては機械的精度を達成するための調整、各種電気系につレ、ては電気的精 度を達成するための調整が行われる。各種サブシステムから露光装置への組み立て 工程は、各種サブシステム相互の、機械的接続、電気回路の配線接続、気圧回路の 配管接続等が含まれる。この各種サブシステムから露光装置への組み立て工程の前 に、各サブシステム個々の組み立て工程があることはいうまでもなレ、。各種サブシス テムの露光装置への組み立て工程が終了したら、総合調整が行われ、露光装置全 体としての各種精度が確保される。なお、露光装置の製造は温度およびクリーン度等 が管理されたクリーンルームで行うことが望ましい。 [0070] The exposure apparatus EX of the present embodiment assembles various subsystems including the respective constituent elements recited in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. It is manufactured by. Before and after this assembly, adjustments to achieve optical accuracy for various optical systems, adjustments to achieve mechanical accuracy for various mechanical systems, Adjustments are made to achieve electrical accuracy for various electrical systems. The process of assembling the various subsystems into the exposure apparatus includes mechanical connections, wiring connections of electric circuits, and piping connections of pneumatic circuits among the various subsystems. It goes without saying that there is an individual assembly process for each subsystem before the assembly process from these various subsystems to the exposure apparatus. When the process of assembling the various subsystems into the exposure apparatus is completed, comprehensive adjustment is performed, and various precisions of the entire exposure apparatus are ensured. In addition, the manufacture of the exposure apparatus includes temperature and cleanliness. It is desirable to perform in a controlled clean room.
[0071] 半導体デバイス等のマイクロデバイスは、図 11に示すように、マイクロデバイスの機 能'性能設計を行うステップ 201、この設計ステップに基づいたマスク(レチクル)を製 作するステップ 202、デバイスの基材である基板を製造するステップ 203、前述した 実施形態の露光装置 EXによりマスクのパターンを基板に露光する露光処理ステップ 204、デバイス組み立てステップ(ダイシング工程、ボンディング工程、パッケージェ 程を含む) 205、検查ステップ 206等を経て製造される。  As shown in FIG. 11, for a micro device such as a semiconductor device, a step 201 for performing a function 'performance design of the micro device, a step 202 for manufacturing a mask (reticle) based on this design step, Step 203 of manufacturing a substrate as a base material, exposure processing step 204 of exposing a mask pattern to the substrate by the exposure apparatus EX of the above-described embodiment, device assembly step (including dicing step, bonding step, and package step) 205 It is manufactured through the inspection step 206 and the like.
産業上の利用可能性  Industrial applicability
[0072] 以上のように、本発明では、基板のエッジ領域を露光する場合にも、長期に亘つて 撥液性が損なわれることなく良好に液浸領域を形成し、液体の基板ステージ外部へ の流出を抑えた状態で露光でき、所望の性能を有するデバイスを製造できる。 As described above, according to the present invention, even when the edge region of the substrate is exposed, the liquid immersion region is favorably formed over a long period of time without impairing the liquid repellency, and the liquid is discharged to the outside of the substrate stage. Exposure can be performed in a state in which outflow of liquid is suppressed, and a device having desired performance can be manufactured.

Claims

請求の範囲 The scope of the claims
[1] 基板の裏面を保持するホルダと、該ホルダを支持して移動するステージとを有する ステージ装置であって、  [1] A stage device having a holder for holding a back surface of a substrate and a stage for supporting and moving the holder,
前記ホルダが、前記基板の外周よりも内側で前記基板の前記裏面を保持する保持 部を有し、  The holder has a holding unit that holds the back surface of the substrate inside the outer periphery of the substrate,
前記ホルダとは別に設けられ、少なくとも前記基板の裏面と対向する位置に撥液性 を有する撥液部材を設けたステージ装置。  A stage device provided separately from the holder and provided with a liquid-repellent member having liquid repellency at least at a position facing the back surface of the substrate.
[2] 請求項 1記載のステージ装置において、  [2] The stage device according to claim 1,
前記撥液部材が、前記ステージに設けられてレ、るステージ装置。  A stage device wherein the liquid repellent member is provided on the stage.
[3] 請求項 1または 2記載のステージ装置において、 [3] The stage device according to claim 1 or 2,
前記撥液部材が、前記基板の裏面とは非接触であるステージ装置。  A stage device wherein the liquid-repellent member is not in contact with the back surface of the substrate.
[4] 請求項 1から 3のいずれか一項に記載のステージ装置において、 [4] The stage device according to any one of claims 1 to 3,
前記基板の外周には当該基板の位置合わせ用の切欠部が形成されており、 前記撥液部材が、前記基板の外周に応じた形状を有してレ、るステージ装置。  A notch for positioning the substrate is formed on the outer periphery of the substrate, and the liquid-repellent member has a shape corresponding to the outer periphery of the substrate.
[5] 請求項 4記載のステージ装置において、 [5] The stage device according to claim 4,
前記ホルダが、前記切欠部に応じた凹部を有し、  The holder has a recess corresponding to the notch,
前記撥液部材が、前記凹部に対応した凸部を有しているステージ装置。  A stage device, wherein the liquid-repellent member has a convex portion corresponding to the concave portion.
[6] 請求項 1から 5のいずれか一項に記載のステージ装置において、 [6] The stage device according to any one of claims 1 to 5,
前記撥液部材が、前記基板の表面とほぼ同じ高さで、少なくとも一部が撥液性の平 坦部を有してレ、るステージ装置。  A stage device, wherein the liquid-repellent member is substantially the same height as the surface of the substrate and has at least a part thereof having a liquid-repellent flat portion.
[7] 請求項 6記載のステージ装置において、 [7] The stage device according to claim 6, wherein
前記撥液部材が、前記基板の表面と対向する部分と前記平坦部との間に少なくと も一部が撥液性の段部を有しているステージ装置。  A stage device wherein the liquid-repellent member has at least a part of a liquid-repellent step between a portion facing the surface of the substrate and the flat portion.
[8] 請求項 1から 7のいずれか一項に記載のステージ装置において、 [8] The stage device according to any one of claims 1 to 7,
前記撥液部材に連通する吸引装置を有するステージ装置。  A stage device having a suction device communicating with the liquid repellent member.
[9] 基板の裏面を保持するホルダと、該ホルダを支持して移動するステージとを有する ステージ装置であって、 [9] A stage device having a holder for holding the back surface of the substrate and a stage for supporting and moving the holder,
前記ホルダが、前記基板の外周よりも内側で前記基板の前記裏面を保持する保持 部を有し、 Holder for holding the back surface of the substrate inside the outer periphery of the substrate Part
前記基板の裏面に弾性変形して液密に当接する弾性部材が設けられているステ ージ装置。  A stage device provided with an elastic member which is elastically deformed and abuts liquid-tightly on the back surface of the substrate.
[10] 請求項 9記載のステージ装置において、  [10] The stage device according to claim 9,
前記弾性部材が撥液性を有するステージ装置。  A stage device in which the elastic member has liquid repellency.
[11] 請求項 9または 10記載のステージ装置において、 [11] The stage device according to claim 9 or 10,
前記弾性部材が前記ホルダに設けられるステージ装置。  A stage device in which the elastic member is provided on the holder.
[12] 請求項 9から 11のいずれか一項に記載のステージ装置において、 [12] The stage device according to any one of claims 9 to 11,
前記基板の外周には、当該基板の位置合わせ用の切欠部が形成されており、 前記弾性部材が、前記基板の外周に応じた形状を有してレ、るステージ装置。  A notch for positioning the substrate is formed on the outer periphery of the substrate, and the elastic member has a shape corresponding to the outer periphery of the substrate.
[13] 請求項 9から 12のいずれか一項に記載のステージ装置において、 [13] The stage device according to any one of claims 9 to 12,
前記弾性部材と前記基板との当接部の外側の空間を吸引する吸引装置を有する ステージ装置。  A stage device having a suction device for sucking a space outside a contact portion between the elastic member and the substrate.
[14] 請求項 9から 13のいずれか一項に記載のステージ装置において、  [14] The stage device according to any one of claims 9 to 13,
前記弾性部材が、フッ素ゴムを有してレ、ることを特徴とするステージ装置。  A stage device, wherein the elastic member has a fluorine rubber.
[15] 投影光学系により基板にパターンを露光する露光装置において、  [15] In an exposure apparatus that exposes a pattern on a substrate by a projection optical system,
請求項 1から 14のいずれか一項に記載のステージ装置を備える露光装置。  An exposure apparatus comprising the stage device according to any one of claims 1 to 14.
[16] 請求項 15記載の露光装置において、  [16] The exposure apparatus according to claim 15, wherein
前記投影光学系と前記基板との間に液体を供給する供給装置を備える露光装置。  An exposure apparatus comprising a supply device for supplying a liquid between the projection optical system and the substrate.
[17] ホルダに保持された基板にパターンを露光する露光方法において、  [17] In an exposure method for exposing a pattern on a substrate held by a holder,
前記ホルダは前記基板の外周よりも内側で前記基板の裏面を保持し、 少なくとも前記基板の裏面と対向する位置に撥液性を有する撥液部材を前記ホル ダとは別に設け、  The holder holds the back surface of the substrate inside the outer periphery of the substrate, and a lyophobic member having lyophobic property is provided at least at a position facing the back surface of the substrate separately from the holder,
前記基板に液体を供給して前記パターンを露光する露光方法。  An exposure method for exposing the pattern by supplying a liquid to the substrate;
[18] 請求項 17に記載の露光方法において、前記撥液部材を用いて前記液体の一部を 回収する露光方法。  [18] The exposure method according to claim 17, wherein the liquid repellent member is used to collect a part of the liquid.
[19] 請求項 17に記載の露光方法において、弾性部材を前記基板の裏面に当接させる 露光方法。 [20] 請求項 19に記載の露光方法において、前記弾性部材が前記撥液部材の下方 ί 設けられている露光方法。 [19] The exposure method according to claim 17, wherein an elastic member is brought into contact with a back surface of the substrate. 20. The exposure method according to claim 19, wherein the elastic member is provided below the liquid repellent member.
PCT/JP2004/018788 2003-12-16 2004-12-16 Stage apparatus, exposure apparatus, and exposure method WO2005059977A1 (en)

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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005353820A (en) * 2004-06-10 2005-12-22 Nikon Corp Exposure system and method of manufacturing device
WO2006030908A1 (en) * 2004-09-17 2006-03-23 Nikon Corporation Substrate holding apparatus, exposure apparatus and device manufacturing method
WO2007007723A1 (en) * 2005-07-08 2007-01-18 Nikon Corporation Substrate for immersion exposure, exposure method and method for manufacturing device
JP2007043145A (en) * 2005-07-08 2007-02-15 Nikon Corp Substrate for liquid-immersion exposure, method of exposure, and method of manufacturing device
JP2007194503A (en) * 2006-01-20 2007-08-02 Toshiba Corp Method and device of treating substrate
JP2008172214A (en) * 2006-12-08 2008-07-24 Asml Netherlands Bv Substrate support and lithographic process
JP2009033201A (en) * 2004-04-14 2009-02-12 Asml Netherlands Bv Lithographic apparatus, and device manufacturing method
JP2009043879A (en) * 2007-08-08 2009-02-26 Canon Inc Exposure apparatus and device manufacturing method
JP2010153419A (en) * 2008-12-24 2010-07-08 Ushio Inc Workpiece stage and exposure apparatus using the workpiece stage
JP2010171462A (en) * 2010-04-26 2010-08-05 Nikon Corp Exposure device and method of manufacturing device
JP2011228716A (en) * 2006-12-13 2011-11-10 Asml Netherlands Bv Table and lithography method
US9013683B2 (en) 2010-12-21 2015-04-21 Asml Netherlands B.V. Substrate table, a lithographic apparatus and a device manufacturing method
JP2021043450A (en) * 2016-02-08 2021-03-18 エーエスエムエル ネザーランズ ビー.ブイ. Lithographic apparatus, method for unloading substrate and method for loading substrate
US11139196B2 (en) 2017-10-12 2021-10-05 Asml Netherlands B.V. Substrate holder for use in a lithographic apparatus

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06168866A (en) * 1992-11-27 1994-06-14 Canon Inc Projection aligner immersed in liquid
JPH10303114A (en) * 1997-04-23 1998-11-13 Nikon Corp Immersion aligner
WO1999049504A1 (en) * 1998-03-26 1999-09-30 Nikon Corporation Projection exposure method and system
JP2004289127A (en) * 2002-11-12 2004-10-14 Asml Netherlands Bv Lithography system and process for fabricating device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06168866A (en) * 1992-11-27 1994-06-14 Canon Inc Projection aligner immersed in liquid
JPH10303114A (en) * 1997-04-23 1998-11-13 Nikon Corp Immersion aligner
WO1999049504A1 (en) * 1998-03-26 1999-09-30 Nikon Corporation Projection exposure method and system
JP2004289127A (en) * 2002-11-12 2004-10-14 Asml Netherlands Bv Lithography system and process for fabricating device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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US9341959B2 (en) 2004-09-17 2016-05-17 Nikon Corporation Substrate holding device, exposure apparatus, and device manufacturing method
US8102512B2 (en) 2004-09-17 2012-01-24 Nikon Corporation Substrate holding device, exposure apparatus, and device manufacturing method
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WO2007007723A1 (en) * 2005-07-08 2007-01-18 Nikon Corporation Substrate for immersion exposure, exposure method and method for manufacturing device
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JP2008172214A (en) * 2006-12-08 2008-07-24 Asml Netherlands Bv Substrate support and lithographic process
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US8634052B2 (en) 2006-12-13 2014-01-21 Asml Netherlands B.V. Lithographic apparatus and method involving a ring to cover a gap between a substrate and a substrate table
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