JPH10340846A - Aligner, its manufacture, exposing method and device manufacturing method - Google Patents

Aligner, its manufacture, exposing method and device manufacturing method

Info

Publication number
JPH10340846A
JPH10340846A JP9151985A JP15198597A JPH10340846A JP H10340846 A JPH10340846 A JP H10340846A JP 9151985 A JP9151985 A JP 9151985A JP 15198597 A JP15198597 A JP 15198597A JP H10340846 A JPH10340846 A JP H10340846A
Authority
JP
Japan
Prior art keywords
refractive index
optical system
liquid
projection optical
reticle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9151985A
Other languages
Japanese (ja)
Other versions
JP3817836B2 (en
Inventor
Taketo Kudo
威人 工藤
Original Assignee
Nikon Corp
株式会社ニコン
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp, 株式会社ニコン filed Critical Nikon Corp
Priority to JP15198597A priority Critical patent/JP3817836B2/en
Publication of JPH10340846A publication Critical patent/JPH10340846A/en
Application granted granted Critical
Publication of JP3817836B2 publication Critical patent/JP3817836B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece
    • G03F7/70341Immersion

Abstract

PROBLEM TO BE SOLVED: To enable continuous correction of imaging performance without vibration, by installing a refractive index adjusting means for adjusting the refractive index of liquid.
SOLUTION: A refractive index adjusting means consists of the following; electrodes D1, ion exchange films 11, 12, bulkheads K1, K2, exhaust pipes H1, H2, a mixer K, an electromagnetic valve DV, an introducing pipe LD, a power source supply part and a second control part. The second control part sends a command to the power source supply part, and applies 8 specified voltage for a specified period across the two electrodes D1. From one electrode turning to an anode, oxygen gas is generated. From the other electrode turning to a cathode, mixed gas of hydrogen and chlorine is generated. Since the concentration of hydrogen chloride in liquid LQ is decreased, the refractive index of the liquid LQ is decreased. The second control part sends a command to the electromagnetic valve DV, in order to open the valve DV and add high concentration admixture aqueous solution to the liquid LQ. Thereby the refractive index of the liquid LQ is increased.
COPYRIGHT: (C)1998,JPO

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は、レチクル上に設けられたデバイスパターンのを感光性基板上に投影する投影光学系を備えた露光装置及び該露光装置を用いた露光方法並びにデバイス製造方法に関する。 BACKGROUND OF THE INVENTION The present invention relates to an exposure method and device manufacturing method using the exposure apparatus and exposure apparatus having a projection optical system for projecting from the device pattern provided on a reticle onto a photosensitive substrate . さらに詳しくは、本発明は投影光学系と感光性基板との間の光路に液体を充填した液浸型露光装置に関する。 More particularly, the present invention relates to an immersion type exposure apparatus filled with liquid in the optical path between the photosensitive substrate and the projection optical system. 本発明は、半導体素子、撮像素子(CCD等)、液晶表示素子、または薄膜磁気ヘッド等を製造する際に好適なものである。 The present invention relates to a semiconductor device, an imaging device (CCD etc.), is suitable for the manufacture of liquid crystal display device or a thin film magnetic head, or the like.

【0002】 [0002]

【従来の技術】光学系の最終面と像面との間の空間を、 BACKGROUND OF THE INVENTION The space between the final surface and the image plane of the optical system,
ワーキングディスタンスと言うが、従来の露光装置の投影光学系ではワーキングディスタンスは空気で満たされていた。 It says working distance, but the working distance was filled with air at the projection optical system of a conventional exposure apparatus. ところで、ICやLSIを製造する過程に於いてシリコンウエハに露光するパターンは、その微細化が常に望まれていて、そのためには露光に用いる光の波長を短くするか、あるいは像側の開口数を大きくする必要がある。 Incidentally, the pattern to be exposed in the step of manufacturing an IC or LSI to a silicon wafer, the in miniaturization have always desirable, or in order that shortens the wavelength of light used for exposure, or the image-side numerical aperture the it is necessary to increase. 光の波長が短くなるにつれ、満足できる結像性能を得つつ露光に満足な光量を確保できるだけの透過率を持つガラス材料は少なくなってくる。 As the wavelength of light becomes shorter, a glass material having a transmittance of only a satisfactory amount of light exposure while obtaining satisfactory image-forming performance can be secured becomes smaller.

【0003】そこで像面までの最終媒質を、空気より屈折率の大きい、液体にすることで像側の開口数を大きくすることが提案されていて、そのように液体を用いた投影光学系を持つ露光装置は、液浸型露光装置と呼ばれている。 [0003] Therefore the final medium to the image plane, a large refractive index than air, for increasing the numerical aperture of the image side by the liquid have been proposed, a projection optical system using so the liquid exposure apparatus having is called a liquid immersion type exposure apparatus. さて、露光装置においては、投影光学系の結像性能を補正するために、投影光学系の最も物体側の光路或いは最も像側の光路中に、結像性能を調整するための結像性能補正部材を交換可能に設ける技術が知られている。 Now, in the exposure apparatus, the projection optical system the imaging performance in order to correct the, in the optical path of the optical path or the most image side of the most object side of the projection optical system, imaging performance correction for adjusting the imaging performance technology to provide a member to be replaced are known.

【0004】 [0004]

【発明が解決しようとする課題】しかしながら、液浸型露光装置では、投影光学系と感光性基板との間の光路(ワーキングディスタンス)に液体を満たす構成であるため、結像性能を補正するための部材を配置することが困難である。 [SUMMARY OF THE INVENTION However, in the liquid immersion type exposure apparatus, since the optical path between the photosensitive substrate and the projection optical system (working distance) is configured to satisfy a liquid, for correcting the imaging performance it is difficult to arrange the member. また、このような結像性能補正部材は、有限の数、現実的な装置の構成を考えると数個程度しか準備することができないため、離散的にしか結像性能を補正できない問題点がある。 In addition, such imaging performance correction member, the number of finite for only a few approximately Given the configuration of the practical device can not be prepared, discrete there is a problem that can not be corrected imaging performance only .

【0005】また、投影光学系の結像性能は所定の許容範囲に収める必要があるが、上述のように結像性能の補正が離散的にしかできなければ、この所定の許容範囲内に収めることが困難となる。 [0005] Although the imaging performance of the projection optical system is required to fit a predetermined allowable range, to be able only to correct the imaging performance can discretely as described above, fall within the predetermined allowable range it becomes difficult. 特に、露光パターンの微細化や露光面積の増大が求められると、この結像性能の許容範囲が狭くなり、また、レチクルと感光性基板とを走査させつつ露光を行う走査露光方法を行う場合にも結像性能特性の変動幅の許容範囲が狭くなっており、離散的な補正では対応しきれない。 In particular, the increase in miniaturization and exposure area of ​​the exposure pattern is required, the permissible range of the imaging performance becomes narrower, and when performing the scanning exposure method of performing exposure while scanning the reticle and the photosensitive substrate also narrow the allowable range of the variation width of the imaging performance characteristics, the discrete corrected not cope.

【0006】また、上述のような結像性能補正部材の交換時において、投影光学系自体の振動が発生するため、 Further, at the time of replacement of the imaging performance compensation member as described above, since the vibration of the projection optical system itself is generated,
結像性能へ悪影響が生じる恐れもある。 Fear that the imaging performance is adversely affected also occurs there. そこで、本発明は、連続的な結像性能の補正を振動を伴うことなく可能とすることを第1の目的とする。 Accordingly, the present invention is to enable without vibration correction continuous imaging performance with the first object. また、本発明は、投影光学系の開口数の増大と結像性能を補正することとの両立を第2の目的とする。 The present invention is directed to a compatibility between correcting the increase and imaging performance of the numerical aperture of the projection optical system and the second object.

【0007】 [0007]

【課題を解決するための手段】上述の第1の目的を達成するために、本発明による露光装置は、レチクル上に設けられたパターンを照明する照明光学系と、このパターンの像を感光性基板上に形成する投影光学系とを有し、 To achieve, there is provided a resolving means for] above first object, the exposure apparatus according to the present invention, an illumination optical system for illuminating a pattern provided on the reticle and the photosensitive image of this pattern and a projection optical system for forming on a substrate,
投影光学系と感光性基板との間の光路中の少なくとも一部分に位置する液体を介して露光を行う露光装置であって、液体の屈折率を調整するための屈折率調整手段を有するものである。 An exposure apparatus which performs exposure through a liquid located in at least a portion of the optical path between the projection optical system and the photosensitive substrate, and has a refractive index adjustment means for adjusting the refractive index of the liquid .

【0008】ここで、上記請求項2に掲げた好ましい態様によれば、屈折率調整手段は、前記投影光学系の結像性能を補正するように液体の屈折率を調整するものである。 [0008] Here, according to a preferred embodiment listed above claim 2, refractive index adjustment means is for adjusting the refractive index of the liquid so as to correct the imaging performance of the projection optical system. この構成に基づいて、請求項3に掲げた好ましい態様によれば、投影光学系の結像性能を測定する結像性能測定手段をさらに備えるものであり、屈折率調整手段は、前記結像性能を補正するように液体の屈折率を調整するものである。 Based on this arrangement, according to a preferred embodiment listed in claim 3, which further comprises an imaging performance measuring means for measuring the imaging performance of the projection optical system, the refractive index adjustment means, the imaging performance it is to adjust the refractive index of the liquid so as to correct the.

【0009】また、請求項4に掲げた好ましい態様によれば、投影光学系の結像性能の変動の要因の状態を検知する変動要因検知手段をさらに備えるものであり、屈折率調整手段は、要因の状態に応じて、結像性能を補正するように液体の屈折率を調整するものである。 [0009] According to a preferred embodiment listed in claim 4, which further comprises a variable factor detecting means for detecting the state of factors of the variation of the imaging performance of the projection optical system, the refractive index adjustment means, depending on the state of the factors, and adjusts the refractive index of the liquid so as to correct the imaging performance. この構成に基づいて、請求項5に掲げた好ましい態様によれば、 Based on this arrangement, according to a preferred embodiment listed in claim 5,
照明光学系は、前記レチクルに対する照明条件を変更可能に構成され、変動要因検知手段は、照明条件の状態を検知し、屈折率調整手段は、照明条件の変更に応じて、 The illumination optical system is capable of changing an illumination condition for the reticle, fluctuation factor detection means detects the state of the lighting conditions, the refractive index adjustment means, in response to a change in lighting conditions,
結像性能を補正するように液体の屈折率を調整するものである。 So as to correct the imaging performance is to adjust the refractive index of the liquid.

【0010】そして、請求項6に掲げた好ましい態様によれば、変動要因検知手段は、レチクルの種類を判別するものであり、屈折率調整手段は、レチクルの種類に応じて、結像性能を補正するように液体の屈折率を調整するものである。 [0010] Then, according to a preferred embodiment listed in claim 6, variables detection means is adapted to determine the type of a reticle, the refractive index adjustment means, according to the type of the reticle, the image forming performance it is to adjust the refractive index of the liquid so as to correct. また、上述の第2の目的を達成するためには、投影光学系と感光性基板との間の光路の全てを液体で満たすことが好ましい。 In order to achieve the second object described above, it is preferable to satisfy all of the optical path between the photosensitive substrate and the projection optical system with a liquid. このとき、本発明による露光装置は、投影光学系と感光性基板との間の光路を前記液体で満たすための側壁と、液体を前記感光性基板ホルダーへ供給すると共に前記感光性基板ホルダーから回収するための供給・回収ユニットとを備え、感光性基板を保持する感光性基板ホルダーをさらに有することが好ましい。 In this case, the exposure apparatus according to the present invention, recovery and side walls to meet the optical path between the photosensitive substrate and the projection optical system with the liquid, the liquid from the photosensitive substrate holder is supplied to the photosensitive substrate holder and a supply and recovery unit for, may further include a photosensitive substrate holder for holding a photosensitive substrate.

【0011】また、屈折率調整手段は、液体に屈折率を調整するための添加剤を供給する添加剤供給ユニットと、液体から前記添加剤を回収するための添加剤回収ユニットとを有することが好ましい。 [0011] The refractive index adjustment means have an additive supply unit for supplying additives to adjust the refractive index liquid, an additive recovery unit for recovering the additive from the liquid preferable.

【0012】 [0012]

【発明の実施の形態】上述の構成のごとき本発明においては、投影光学系と感光性基板との間の光路中に位置する液体の屈折率を調整することができるため、この屈折率の変化により投影光学系の結像性能を補正することができる。 DETAILED DESCRIPTION OF THE INVENTION In such the present invention configured as described above, it is possible to adjust the refractive index of the liquid located in the optical path between the projection optical system and the photosensitive substrate, the change in the refractive index it can be corrected imaging performance of the projection optical system by. ここで、屈折率調整の手法としては、液体が多物質の混合液体であるとすると、この混合液体の屈折率nは、ローレンツ・ローレンス(Lorentz-Lorenz)の式に従い、 Here, as a method for refractive index adjustment, the liquid is assumed to be a mixed liquid of a multi-material, the refractive index n of the liquid mixture, in accordance with the equation of the Lorentz Lawrence (Lorentz-Lorenz),

【0013】 [0013]

【数1】 [Number 1]

【0014】となる。 The [0014]. 但し、 However,

【0015】 [0015]

【数2】 [Number 2]

【0016】である。 [0016] a. 例えば液体を水溶液とすると、この水溶液の屈折率が水溶液自体の濃度に応じて変化するため、水溶液へ添加する物質の濃度を増減させれば良い。 For example, the liquid aqueous solution, the refractive index of the aqueous solution changes according to the concentration of the aqueous solution itself, it is sufficient to decrease the concentration of the substance to be added to the aqueous solution. これにより、投影光学系の結像性能を補償できる屈折率の値となるように、液体の屈折率を変化させれば、 Thus, to a value of the refractive index that can compensate for the imaging performance of the projection optical system, if a change in the refractive index of the liquid,
投影光学系の結像性能は良好なものとなる。 Imaging performance of the projection optical system becomes excellent.

【0017】ここで、屈折率の調整は、例えば投影光学系の収差などの結像性能を測定し、その結果に応じて屈折率を調整しても良く、投影光学系の結像性能の変動に対応している要因の変動を検知して、その結果に応じて屈折率を調整しても良い。 [0017] Here, adjustment of the refractive index, for example by measuring the imaging performance, such as aberration of the projection optical system may be adjusted refractive index in accordance with the result, fluctuations in the imaging performance of the projection optical system by detecting a variation factors that support may adjust the refractive index in accordance with the result. 前者の投影光学系の結像性能を測定する手法においては、露光装置の製造時に投影光学系の収差などを測定し、この収差を補償する屈折率の値を液体の屈折率の初期値に設定しても良い。 In the method of measuring the imaging performance of the former of the projection optical system, settings, etc. to measure the aberration of the projection optical system at the time of manufacturing of the exposure apparatus, the refractive index to compensate for this aberration in the initial value of the refractive index of the liquid it may be. このように製造時の調整の一部として屈折率を調整すれば、製造・調整が容易となる利点がある。 By adjusting the refractive index as part of the thus during production adjustment, there is an advantage that it is easy to manufacture and adjust. また、露光装置自体に収差測定機構などを設けておき、この収差測定機構による収差測定結果に応じて、液体の屈折率を変更しても良い。 The exposure apparatus itself advance and provided aberration measuring mechanism, in accordance with the aberration measurement result by the aberration measuring mechanism may change the refractive index of the liquid.

【0018】一方、後者の結像性能の変動に対応する要因の変動としては、レチクルの種類、照明条件の状態、 [0018] On the other hand, the variation of the factor corresponding to the latter variations in imaging performance, the kind of the reticle, the illumination condition state,
投影光学系を通過する露光エネルギー量などが挙げられる。 An exposure amount of energy passing through the projection optical system and the like. ここで、レチクルを照明する際の照明条件(σ値、 Here, illumination condition (sigma value when illuminating the reticle,
変形照明か否かなど)は、レチクル上に設けられるパターンの種類によって最適なものが決まり、この照明条件が変わると、投影光学系の収差を初めとする結像性能が変化する。 Modified illumination whether etc.), determines the optimum depending on the type of pattern provided on the reticle and the illumination conditions change, imaging performance, including the aberration of the projection optical system is changed. そこで、例えばレチクルの種類、照明条件などの要因ごとに、この要因の変動に伴って変化する結像性能を補償するための屈折率の値を予めメモリーなどに記憶させておき、この要因の変動を検知し、記憶された関係に基づいて液体の屈折率を調整すれば良い。 Therefore, for example, the type of a reticle, for each factor, such as lighting conditions, leave the value of the refractive index is previously memory such as store for compensating the imaging performance varies with variations of the factors, variations in this factor detects, it may be adjusted to the refractive index of the liquid on the basis of the stored relationship. また、 Also,
投影光学系を通過する露光エネルギー量の大小により投影光学系の結像性能が変化する、いわゆる照射変動があるが、この場合においても、露光エネルギー量と、この露光エネルギー量の大小によって変化する結像性能を補償するための屈折率の値を予めメモリーなどに記憶させておき、この要因の変動を検知し、記憶された関係に基づいて液体の屈折率を調整すれば良い。 Projected by the exposure energy amount of size to pass through the optical system imaging performance of the projection optical system changes, there is a so-called irradiation variation, in this case, change the amount of exposure energy by the amount of exposure energy magnitude formation leave the value of the refractive index is previously memory such as store for compensating the image performance, detects variations in this factor may be adjusted to the refractive index of the liquid on the basis of the stored relationship. なお、この手法において、メモリーに記憶させる代わりに、所定の計算式で算出しても良い。 Note that in this approach, instead of storing in the memory, may be calculated by a predetermined formula.

【0019】このように、液体の屈折率を調整することで、投影光学系の結像性能のうち、特に球面収差、像面湾曲の補正に効果的である。 [0019] Thus, by adjusting the refractive index of the liquid, of the imaging performance of the projection optical system, in particular spherical aberration, effectively correct field curvature. 以下、図面を参照して、本発明にかかる実施の形態について説明する。 Hereinafter, with reference to the accompanying drawings, embodiments will be described in accordance with the present invention. [第1の実施の形態]図1は、本発明にかかる第1の実施の形態による露光装置を概略的に示す図である。 [First Embodiment] FIG. 1, an exposure apparatus according to a first embodiment of the present invention is a diagram schematically illustrating. 尚、 still,
図1では、XYZ座標系を採用している。 In Figure 1, it employs a XYZ coordinate system.

【0020】図1において、光源Sは、例えば波長24 [0020] In FIG. 1, the light source S is, for example, a wavelength 24
8nmの露光光を供給し、この光源Sからの露光光は、 Supplying 8nm of exposure light, the exposure light from the light source S is,
照明光学系IL及び反射鏡Mを介してレチクルRをほぼ均一な照度分布のもとで照明する。 Via the illumination optical system IL and a reflecting mirror M to illuminate under substantially uniform illuminance distribution reticle R. ここで、本例では光源Sとして、KrFエキシマレーザ光源を用いているが、その代わりに、193nmの露光光を供給するAr Here, as the light source S in the present embodiment, although using a KrF excimer laser light source, but instead supplies the exposure light 193 nm Ar
Fエキシマレーザ光源やg線、i線等を供給する高圧水銀ランプ等を用いても良い。 F excimer laser light source or a g-line may be used a high-pressure mercury lamp for supplying an i-line or the like. また、図1では不図示ではあるが照明光学系ILは、面光源を形成するためのオプティカルインテグレータと、この面光源からの光を集光して被照射面を重畳的に均一照明するためのコンデンサ光学系と、オプティカルインテグレータにより形成される面光源の位置に配置されて面光源の形状を可変にするための可変開口絞りとを有するものである。 Also, there is not shown in FIG. 1 but the illumination optical system IL includes an optical integrator for forming a surface light source, for superimposing uniform illuminating an illumination target surface by condensing light from the surface light source a condenser optical system is disposed at a position of the surface light source formed by the optical integrator to form a surface light source having a variable aperture stop for the variable. ここで、面光源の形状としては、光軸から偏心した複数の面光源を持つもの、輪帯形状のもの、円形状であってその大きさがことなるものなどがある。 Here, the shape of the surface light source, which has a plurality of surface light source which is eccentric from the optical axis, that of the annular shape, and the like that differ in their size have a circular shape. このような照明光学系IL Such illumination optical system IL
としては、例えば米国特許第5,329,094号公報や米国特許第5,576,801号公報に開示されているものを用いることができる。 As can be those disclosed for example in U.S. Patent No. 5,329,094 discloses and US Patent No. 5,576,801 publication.

【0021】そして、レチクルRを通過・回折した露光光は、投影光学系Tを経てウエハW上に達し、ウエハ上には、レチクルRの像が形成される。 [0021] Then, the exposure light passing through and diffracted reticle R is reached on the wafer W through the projection optical system T, On wafer, the image of the reticle R is formed. ここで、レチクルRは、レチクルローダーRLによって保持され、レチクルローダーRLは任意の時にローダーテーブルLT上を駆動装置T1により、X軸及びY軸上で任意の速度で移動できるように構成されている。 Here, the reticle R is held by a reticle loader RL, reticle loader RL is configured as a loader table LT top drive T1 at any time, it can be moved at any rate on the X-axis and Y-axis . ここで、レチクルローダーRLのローダーテーブルLT上での移動速度は、速度センサ−SSで検知され、この速度センサーSSからの出力は、第1制御部CPU1へ伝達される。 Here, the moving speed on the loader table LT of the reticle loader RL is detected by the speed sensor -SS, output from the speed sensor SS is transmitted to the first control unit CPU 1.

【0022】また、ウエハWは、ウエハテーブルWTにより保持されている。 [0022] In addition, the wafer W is held by the wafer table WT. このウエハテーブルWTには、液体LQを溜めるための側壁が設けられている。 The wafer table WT, is provided a side wall for storing the liquid LQ. 本例では、この側壁により、ウエハWから投影光学系Tまでの光路の全てが液体LQで満たされる構成となっている。 In the present example, this sidewall has a structure in which all of the optical path from the wafer W to the projection optical system T is filled with the liquid LQ.
このウエハテーブルWTは、駆動装置T2によりホルダーテーブルHT上でX軸方向及びY軸方向に任意の速度で移動できるように構成されている。 The wafer table WT is constructed to be movable at an arbitrary speed in the X-axis direction and the Y-axis direction on the holder table HT by the drive unit T2.

【0023】ここで、上記の第1制御部CPU1は、レチクルローダーRLのローダーテーブルLT上での移動速度と、投影光学系Tの露光倍率βとからウエハテーブルWTのホルダーテーブル上での移動速度を算出し、駆動装置T2へ伝達する。 [0023] Here, the first control unit CPU1 described above, the moving speed of the moving speed on the loader table LT of the reticle loader RL, on the holder table of the wafer table WT from the exposure magnification β of the projection optical system T It is calculated and transmitted to the drive device T2. 駆動装置は、第1制御部CPU Drive, the first control unit CPU
1から伝達された移動速度に基づいて、ウエハテーブルWTを移動させる。 1 based on the moving speed transmitted from the moves wafer table WT.

【0024】図2は、このウエハテーブルWTの構成を詳細に表した図である。 FIG. 2 is a diagram showing a detailed configuration of the wafer table WT. この図2において、投影光学系Tの最もウエハW側の光学部材と、投影光学系Tの金枠との間は、液体LQが浸透してこないように密着しているか、パッキングされている。 In FIG. 2, between the most wafer W side of the optical member of the projection optical system T, the metal frame of the projection optical system T is either the liquid LQ is adhered to not come penetrate, are packed. また、ウエハテーブルW In addition, the wafer table W
Tの底部には、複数の開口が設けられており、これらの開口に接続されている配管Vから減圧することにより、 The bottom T, then a plurality of openings are provided, by reducing the pressure from the piping V that are connected to these openings,
ウエハWはウエハテーブルWTに吸着されている。 The wafer W is adsorbed to the wafer table WT. そして、ウエハテーブルWTには、電極D1,D2が設けられており、これらの電極D1、D2のそれぞれの周囲には、イオン交換膜I1,I2が設けられている。 Then, the wafer table WT, the electrodes D1, D2 are provided, around each of these electrodes D1, D2, ion exchange membrane I1, I2 are provided. これらのイオン交換膜I1,I2により、電極D1,D2の周囲と、露光光が液体LQを通過する領域とが区切られる。 These ion exchange membranes I1, I2, and surrounding the electrode D1, D2, and a region in which the exposure light passes through the liquid LQ are separated. ここで、電極D1の周囲の雰囲気はイオン交換膜I Here, the atmosphere around the electrodes D1 ion exchange membrane I
1と隔壁K1とにより密閉空間となっており、この密閉空間には排気管H1が接続されている。 It has become 1 and the partition wall K1 and the sealed space, an exhaust pipe H1 is connected to the enclosed space. また、電極D2 The electrode D2
の周囲の雰囲気はイオン交換膜I2と隔壁K2とにより密閉空間となっており、この密閉空間には排気管H2が接続されている。 Around the atmosphere has become a closed space by an ion exchange membrane I2 and the partition K2, H2 exhaust pipe is connected to the enclosed space. これらの排気管H1、H2は、ともに混合器Kに接続されている。 These exhaust pipes H1, H2 are connected together to the mixer K. この混合器Kには、電磁弁DVを備えた導入管LDの一端が接続されており、この導入管LDの他端は、ウエハテーブルWTの近傍に位置している。 This is the mixer K, one end of the inlet tube LD having an electromagnetic valve DV is connected, the other end of the inlet tube LD is positioned in the vicinity of the wafer table WT.

【0025】電極D1,D2への印可電圧は図示なき電源供給部から供給され、電源供給部が供給する印可電圧は、第2制御部CPU2により制御される。 The voltage applied to the electrode D1, D2 is supplied from the unillustrated power supply section, the power supply unit is applied voltage is supplied, it is controlled by the second control unit CPU 2. また、電磁弁DVの開閉に関してもは、第2制御部CPU2が制御する。 Also, the second control unit CPU2 controls with respect to opening and closing of the electromagnetic valve DV. 本例では、これらの電極D1,D2、イオン交換膜I1,I2、隔壁K1,K2、排気管H1,H2、混合器K、電磁弁DV、導入管LD、図示なき電源供給部、第2制御部CPU2が屈折率調整手段を構成している。 In this example, the electrodes D1, D2, ion exchange membrane I1, I2, partition walls K1, K2, exhaust pipe H1, H2, mixer K, solenoid valve DV, inlet tube LD, the power supply unit otherwise shown, the second control part CPU2 constitute the refractive index adjustment means.

【0026】以下、屈折率調整手段の動作について説明する。 [0026] Hereinafter, the operation of the refractive index adjustment means. 以下の説明において、液体LQは、純水に添加剤として塩化水素を加えたものであるとしている。 In the following description, the liquid LQ is directed to is obtained by adding hydrogen chloride as an additive to pure water. まず、 First of all,
液体LQの屈折率を下げる場合、第2制御部CPU2 To decrease the refractive index of the liquid LQ, the second control unit CPU2
は、電源供給部へ指令を送り、電極D1及び電極D2の間に所定の電圧を所定の時間だけ加印する。 Sends an instruction to the power supply unit is pressurized indicia for a predetermined time a predetermined voltage between the electrodes D1 and the electrode D2. このとき、 At this time,
陽極となる電極からは酸素気体が発生し、陰極となる電極からは水素と塩素との混合気体が発生する。 Oxygen gas generated from the electrode serving as the anode, the gas mixture of hydrogen and chlorine generated from the electrode serving as the cathode. このとき、液体LQにおける塩化水素濃度が下がるため、上記(1)式からもわかるように、液体LQの屈折率が低下する。 At this time, since the hydrogen chloride concentration decreases in the liquid LQ, the (1) As can be seen from the equation, the liquid LQ of the refractive index is decreased. ここで、各々の電極D1,D2の近傍で発生した気体は、イオン交換膜I1,I2を通過しないため、排気管H1,H2を介して回収することが可能である。 Here, the gas generated in the vicinity of each of the electrodes D1, D2, because it does not pass through the ion-exchange membrane I1, I2, it is possible to recover through the exhaust pipe H1, H2. この回収された気体は、混合器Kへ送られる。 The recovered gas is transferred to the mixer K. 混合器Kでは、回収された気体(酸素気体、水素気体、塩化水素気体)が混ぜ合わせられ、これより、液体LQよりも高濃度の添加物水溶液が生成される。 The mixer K, recovered gas (oxygen gas, hydrogen gas, hydrogen gas chloride) brought is mixed, than this, the high concentration additive aqueous is produced than the liquid LQ.

【0027】また、液体LQの屈折率を上げる場合、第2制御部CPU2は、電磁弁DVを開いて高濃度の添加物水溶液を液体LQへ加えるように、電磁弁DVへ指令を送る。 Further, if raising the refractive index of the liquid LQ, the second control unit CPU2 is a highly concentrated additive aqueous to add to the liquid LQ by opening the electromagnetic valve DV, sends a command to the electromagnetic valve DV. これにより、液体LQの屈折率が上昇する。 Accordingly, the refractive index of the liquid LQ increases. この構成により、液体LQの屈折率を可変にできる。 This arrangement enables the refractive index of the liquid LQ variable. さて、第2制御部CPU2に接続されているメモリーM1 Now, memory M1 connected to the second control unit CPU2
には、種々の照明条件ごとに対応して屈折率の値がテーブルの形で記憶されている。 The value of the refractive index in response to each different illumination conditions are stored in a table. ここで、屈折率の値は、ある照明条件下において投影光学系Tで生じる収差を補正するために必要な液体LQの屈折率の値である。 Here, the value of the refractive index is a value of the refractive index of the liquid LQ necessary for correcting the aberrations occurring in the projection optical system T in certain lighting conditions. また、 Also,
このメモリーM1には、ある時点における液体LQ中の添加物濃度の値が、常に更新される形で保管されている。 This memory M1, the value of the additive concentration in the liquid LQ at a certain time point, are always stored in a form that is updated.

【0028】また、上記の照明光学系ILは、この照明光学系ILが形成する面光源の形状に関する情報を第2 [0028] The illumination optical system IL above, information about the shape of the surface light source the illumination optical system IL to form a second
制御部CPU2へ伝達するために、第2制御部CPU2 In order to transmit to the control unit CPU2, the second control unit CPU2
と接続されている。 And it is connected to the. ここで、照明条件−本例では面光源の形状−が変化すると、この情報は第2制御部CPU2 Here, illumination conditions - the shape of the surface light source in this example - the changes, this information is the second control unit CPU2
へ伝達される。 It is transmitted to. このとき、第2制御部CPU2は、伝達された照明条件に対応する屈折率の値をメモリーM1から検索し、その屈折率を実現するための添加物の濃度を上記(1)式から計算する。 At this time, the second control unit CPU2 retrieves the value of the refractive index corresponding to the transmitted illumination conditions from the memory M1, to calculate the concentration of additive to achieve the refractive index from the formula (1) . 次に第2制御部CPU2 Next, the second control unit CPU2
は、メモリーM1に保管されている現在の添加物濃度と、計算された添加物濃度とに従って、現在の添加物濃度を計算された添加物濃度とするように、電極D1,D Is the current additive concentration that is stored in memory M1, in accordance with the calculated additive concentration, so that the additive concentration calculated the current additive concentration, electrode D1, D
2あるいは電磁弁DVを制御する。 2 or controlling the electromagnetic valve DV.

【0029】これにより、液体LQの屈折率の値は、液体LQを含めたときの投影光学系Tの収差が補正されるものとなる。 [0029] Thus, the value of the refractive index of the liquid LQ becomes that aberration of the projection optical system T when including the liquid LQ is corrected. [第2の実施の形態]第2の実施の形態は、第1の実施の形態における添加物をエチルアルコールとした点が大きく異なる。 [Second Embodiment] The second embodiment is the point that the additive in the first embodiment and ethyl alcohol are significantly different. このエチルアルコールは、感光性基板としてのレジストが塗布されたウエハWのレジスト層を溶解せず、投影光学系Tにおける最もウエハW側の光学部材(液体LQと接する光学部材)及びこの光学部材に施された光学コートへの影響が少ない利点がある。 The ethyl alcohol does not dissolve the resist layer of the wafer W on which the resist is applied as a photosensitive substrate, the most wafer W side of the optical member (optical member in contact with the liquid LQ) and the optical member in the projection optical system T impact on the decorated with optical coating and there is a little advantage.

【0030】また、第2の実施の形態においては、屈折率調整手段の構成が第1の実施の形態のものとは異なる。 [0030] In the second embodiment, the configuration of the refractive index adjusting unit is different from that of the first embodiment. 以下、図3を参照して屈折率調整手段の構成につき説明する。 Hereinafter, with reference to FIG. 3 will be described configuration of the refractive index adjustment means. なお、図3において、図2に示したものと同じ機能を有する部材には、同じ符号を付してある。 In FIG. 3, members having the same functions as those shown in FIG. 2 are denoted by the same reference numerals. 第2 The second
の実施の形態によるウエハテーブルWTを示す図3において、第1の実施の形態のものとは異なる点は、添加物を液体LQへ供給するための添加物供給管LSと、純水を液体LQへ供給するための純水供給管WSと、液体L 3 showing the wafer table WT according to the embodiment, it is different from that of the first embodiment, an additive and an additive feed pipe LS for supplying the liquid LQ, a pure water liquid LQ a pure water supply pipe WS to be supplied to the liquid L
QがウエハテーブルWTから溢れないように液体LQを排出する排出管Lとを有する点である。 Q is the point and a discharge pipe L for discharging the liquid LQ so as not to overflow from the wafer table WT.

【0031】ここで、添加物供給管LS、純水供給管W [0031] Here, the additive feed pipe LS, pure water supply pipe W
S及び排出管Lには、添加物及び純水の供給量を調整するための電磁弁DVLS,DVWS及び液体LQの排出量を調整するための電磁弁DVLがそれぞれ設けられており、これらの電磁弁DVLS,DVWS,DVLの開閉は、第2制御部CPU2により制御されている。 The S and the discharge pipe L, additive and purified water solenoid valve DVLS for adjusting the supply amount of the electromagnetic valve DVL for adjusting the discharge amount of DVWS and the liquid LQ are respectively provided, these electromagnetic valve DVLS, DVWS, opening and closing of DVL is controlled by the second control unit CPU 2. 第2 The second
の実施の形態における屈折率調整時の動作について説明する。 A description will be given of the operation at the time of the refractive index adjustment in the embodiment.

【0032】まず、液体LQの屈折率を上げる場合、第2制御部CPU2は電磁弁DVLSを制御して、所定の量だけ添加物を液体LQへ加える。 Firstly, when increasing the refractive index of the liquid LQ, the second control unit CPU2 controls the solenoid valve DVLS, by a predetermined amount additive is added to the liquid LQ. このとき、排出管L At this time, the discharge pipe L
から液体LQを所定の量だけ排出する。 Discharging the liquid LQ by a predetermined amount from. この排出する液体LQの量は、加えられた添加物の量と同じであることが好ましい。 The amount of the liquid LQ to the discharge is preferably the same as the amount of the added additive. これにより、液体LQ中の添加物濃度が高まり、その屈折率が上昇する。 This increases the additive concentration in the liquid LQ, the refractive index is increased.

【0033】また、液体LQの屈折率を下げる場合、第2制御部CPU2は電磁弁DVWSを制御して、所定の量だけ純水を液体LQへ加える。 Further, when lowering the refractive index of the liquid LQ, the second control unit CPU2 controls the solenoid valve DVWS, by a predetermined amount is added pure water to the liquid LQ. このとき、排出管Lから液体LQを所定の量だけ排出する。 At this time, it discharges the liquid LQ by a predetermined amount from the discharge pipe L. この排出する液体LQの量は、加えられた純水の量と同じであることが好ましい。 The amount of the liquid LQ to the discharge is preferably the same as the amount of pure water added. これにより、液体LQ中の添加物濃度が低くなり、その屈折率が低下する。 Thus, the additive concentration in the liquid LQ decreases, the refractive index decreases.

【0034】ここで、加えられる添加物及び純水の量、 [0034] Here, the additive and the amount of pure water is added,
排出する液体LQの量は、第2制御部CPU2により制御される。 The amount of the liquid LQ to be discharged is controlled by the second control unit CPU 2. なお、メモリーM1内に照明条件の種類に対応して屈折率の値が記憶される点、ある時点における液体LQの添加物濃度の値が保管される点は、上述の第1 Incidentally, that the value of the refractive index corresponding to the type of lighting conditions in memory M1 is stored, is that the value of the additive concentration in the liquid LQ at a certain point in time are stored, the above-described first
の実施の形態と同様であり、これらの情報に基づいて、 It is similar to the embodiment of, based on the information,
投影光学系Tの収差を補正できる屈折率を実現するための添加物濃度を計算する点も第1の実施の形態と同様である。 Point to calculate the additive concentration to achieve a refractive index capable of correcting the aberration of the projection optical system T is also the same as in the first embodiment.

【0035】このようにして、第2の実施の形態における第2制御部CPU2は、メモリーM1に保管されている現在の添加物濃度と、計算された添加物濃度とに従って、現在の添加物濃度を計算された添加物濃度とするように、電磁弁DVLS,DVWS,DVLの開閉を制御する。 [0035] Thus, the second control unit in the second embodiment CPU2 has a current additive concentration that is stored in memory M1, in accordance with the calculated additive concentration, current additive concentration as the calculated additive concentration, controls solenoid valves DVLS, DVWS, the opening and closing of DVL. これにより、液体LQの屈折率の値は、液体LQ Thus, the value of the refractive index of the liquid LQ, the liquid LQ
を含めたときの投影光学系Tの収差が補正されるものとなる。 The aberration of the projection optical system T when including is intended to be corrected. [第3の実施の形態]次に、図4を参照して第3の実施の形態について説明する。 Third Embodiment Next, a third embodiment is described with reference to FIG. 第3の実施の形態による露光装置は、収差測定装置を備えている点で上述の第1及び第2の実施の形態とは異なる。 An exposure device according to the third embodiment is different from the first and second embodiments described above in that it includes an aberration measurement device. なお、図4において、上述の図1〜図3の例と同じ機能を有する部材には同じ符号を付してあり、図1と同様のXYZ座標系を採用している。 In FIG. 4, members having the same functions as the example of FIG. 1 to FIG. 3 described above are denoted by the same reference numerals, adopts the same XYZ coordinate system as in FIG.

【0036】図4において、光源Sは、波長248nm [0036] In FIG. 4, the light source S is, wavelength 248nm
の露光光を供給し、この光源Sからの露光光は、ビーム整形光学系11により所定形状の断面に整えられた後、 Supplying the exposure light, the exposure light from the light source S is, after being adjusted to a cross section of a predetermined shape by the beam shaping optical system 11,
第1フライアイレンズ12に入射する。 Entering the first fly-eye lens 12. 第1フライアイレンズ12の射出側には、複数の光源像からなる2次光源が形成される。 On the exit side of the first fly-eye lens 12, a secondary light source comprising a plurality of light source images are formed. この2次光源からの露光光は、リレーレンズ系13F,13Rを経て第2フライアイレンズ1 Exposure light from the secondary light source, a relay lens system 13F, the second fly-eye lens through 13R 1
5へ入射する。 Incident to 5. このリレーレンズ系は前群13F及び後群13Rから構成され、これらの前群13F及び後群1 The relay lens system is composed of the front group 13F and the rear group 13R, before these groups 13F and the rear lens group 1
3Rの間には、被照射面上でのスペックルを防止するための振動ミラー14が配置されている。 Between 3R, oscillating mirror 14 for preventing speckle on the irradiated surface is disposed.

【0037】さて、第2フライアイレンズ15の射出面側には、第1フライアイレンズによる2次光源の像が複数形成され、これが3次光源となる。 [0037] Now, the exit surface side of the second fly-eye lens 15, the image of the secondary light sources of the first fly-eye lens is formed with a plurality, which is the tertiary light sources. この3次光源が形成される位置には、所定の形状あるいは所定の大きさを持つ複数の開口絞りを設定できる可変開口絞り16が配置されている。 The position where the tertiary light sources are formed, the variable aperture stop 16 can have multiple aperture stop having a predetermined shape or a predetermined size are arranged. この可変開口絞り16は、例えば図5に示すように、石英などで構成された透明基板上にパターニングされた6つの開口絞り16a〜16eをターレット状に設けたものである。 The variable aperture stop 16, for example, as shown in FIG. 5, in which the six aperture stop 16a~16e patterned like on a transparent substrate that is configured with a quartz provided in a turret-like. ここで、円形開口を持つ2つの開口絞り16a,16bは、σ値(投影光学系の開口数に対する照明光学系の開口数)を変更するための絞りであり、輪帯形状を持つ2つの開口絞り16c,16d Here, two aperture stops 16a with a circular aperture, 16b is a diaphragm for changing the σ value (numerical aperture of the illumination optical system to the numerical aperture of the projection optical system), two openings with annular shape aperture 16c, 16d
は、互いに輪帯比の異なる絞りである。 Is a different aperture of the annular ratio to each other. そして、残りの2つの開口絞り16e,16fは、4つの偏心した開口を有する絞りである。 The remaining two aperture stops 16e, 16f are squeezed with four eccentric opening. この可変開口絞り16は、可変開口絞り駆動ユニット17により、複数の開口絞り16a The variable aperture stop 16, a variable aperture stop drive unit 17, a plurality of aperture stops 16a
〜16fのうち何れか一つが光路内に位置するように駆動される。 One of ~16f is driven so as to be positioned in the optical path.

【0038】図4に戻って、可変開口絞り16からの露光光は、コンデンサレンズ系18により集光されてレチクルブラインド19上を重畳的に照明する。 [0038] Returning to FIG. 4, the exposure light from the variable aperture stop 16 is condensed by the condenser lens system 18 to superposedly illuminate the reticle blind 19. レチクルブラインド19は、リレー光学系20F,20Rに関してレチクルRのパターン形成面と共役に配置されており、 The reticle blind 19, a relay optical system 20F, are arranged on the pattern formation surface is conjugate of the reticle R with respect to 20R,
レチクルブラインド19の開口形状によりレチクルR上での照明領域の形状が決定される。 Shape of the illumination region on the reticle R is determined by the aperture shape of the reticle blind 19. レチクルブラインド19からの露光光は、リレー光学系の前群20F、反射鏡M及びリレー光学系の後群20Rを介してレチクルR Exposure light from the reticle blind 19, the front group 20F of the relay optical system, the reticle R via the reflecting mirror M and the group 20R of the relay optical system
上の所定の位置に実質的に均一な照度分布の照明領域を形成する。 Forming an illumination area substantially uniform illuminance distribution on a predetermined position of the upper.

【0039】なお、前述の第1及び第2の実施の形態における照明光学系ILは、この実施の形態に示したビーム整形光学系11〜リレー光学系20F,20Rを適用することもできる。 [0039] The illumination optical system IL in the first and second embodiments described above can also be applied to the beam shaping optics 11 to relay optics 20F, 20R shown in this embodiment. さて、レチクルRは、レチクルローダ−RL上に載置されており、このレチクルローダ−R Now, the reticle R is placed on the reticle loader -RL, the reticle loader -R
Lは、ホルダーテーブルLT上で図中XY方向及びZ軸を中心とした回転方向(θ方向)に移動可能となっている。 L is movable in the direction of rotation (theta direction) around the XY direction and the Z-axis in the figure on the holder table LT. このレチクルローダ−RLには、移動鏡RIMが設けられており、レチクル干渉計RIは、レチクルローダ−RLのXY方向及びθ方向の位置を検出する。 This reticle loader -RL, movable mirrors and RIM are provided, the reticle interferometer RI detects the XY direction and θ-direction position of the reticle loader -RL. また、 Also,
レチクルローダ−RLは、レチクルローダ−駆動ユニットRLDによりXY方向及びθ方向へ駆動される。 The reticle loader -RL is a reticle loader - driven in the XY direction and the θ direction by a drive unit RLD. ここで、レチクル干渉計RIからの出力は、第1制御部CP Here, the output from the reticle interferometer RI, the first control unit CP
U1へ伝達され、第1制御部CPU1は、レチクルローダ−駆動ユニットRLDを制御する構成となっている。 Is transmitted to the U1, the first control unit CPU1 is reticle loader - has a configuration for controlling the drive unit RLD.

【0040】また、図示なきレチクルストッカーからの搬送路の途中には、レチクルRに設けられたバーコードを読みとるためのバーコードリーダーBRが設けられている。 Further, in the middle of the conveying path from the defunct reticle stocker shown, the bar code reader BR for reading a bar code provided on the reticle R is provided. このバーコードリーダーBRが読みとったレチクルRの種類に関する情報は、第2制御部CPU2へ伝達される。 Information about the type of a reticle R that the bar code reader BR is read is transmitted to the second control unit CPU 2. ここで、第2制御部CPU2に接続されているメモリーM1には、レチクルRの種類ごとに最適な照明条件に関する情報と、レチクルRの種類ごとに最適な液体LQの屈折率の値とが記憶されている。 Here, the memory M1 connected to the second control unit CPU 2, and the information about the optimal illumination conditions for each type of reticle R, and the value of the refractive index of the optimal liquid LQ for each type of reticle R is stored It is.

【0041】レチクルRの下側には、所定の縮小倍率| [0041] below the reticle R, a predetermined reduction magnification |
β|を有する投影光学系Tが設けられており、この投影光学系Tの最もウエハ面側の光学部材とウエハWとの間には、液体LQが介在している。 beta | and the projection optical system T is provided with, between the most wafer surface side of the optical member and the wafer W of the projection optical system T, the liquid LQ is interposed. 投影光学系Tは、この液体LQを介してウエハ面上にレチクルRの縮小像を形成する。 The projection optical system T forms a reduced image of the reticle R onto a wafer surface via the liquid LQ. ウエハWは、ウエハテーブルWTに吸着固定されており、このウエハテーブルWTは、ウエハテーブルWT自体のZ軸方向への移動やティルト(Z軸に対する傾き)を行わせるためのZアクチュエータZD1,ZD Wafer W is sucked and secured on the wafer table WT, the wafer table WT, Z actuator for causing (inclination with respect to the Z-axis) movement or tilt of the Z-axis direction of wafer table WT itself ZD1, ZD
2,ZD3を介して、定盤に対してXY方向に移動可能なウエハステージWTSに取り付けられている。 Through 2, ZD3, is attached to the wafer stage WTS movable in XY direction relative to the surface plate. このウエハステージWTSは、ウエハステージ駆動ユニットW The wafer stage WTS is, wafer stage drive unit W
Dにより駆動される。 It is driven by D. また、ウエハテーブルの側壁は鏡面加工が施されており、この部分がウエハ干渉計WIの移動鏡となっている。 Further, the side wall of the wafer table are subjected to mirror finish, this portion serves as a movable mirror of wafer interferometer WI. ここで、ウエハステージ駆動ユニットWDの駆動は上述の第1制御部CPU1で制御され、ウエハ干渉計WIからの出力は第1制御部CPU1 Here, the driving of the wafer stage driving unit WD are controlled by the first control unit CPU1 described above, the output from the wafer interferometer WI first controller CPU1
へ伝達される構成となっている。 It is configured to be transmitted to.

【0042】また、投影光学系Tには、投影光学系TとウエハWとの間のZ方向の距離を測定するためのフォーカスセンサAFが設けられている。 Further, the projection optical system T, the focus sensor AF for measuring the distance in the Z direction between the projection optical system T and the wafer W is provided. このフォーカスセンサAFは、投影光学系TにおけるウエハW側に近い光学素子を介してウエハ面上に光を照射し、かつウエハで反射された光を上記光学素子を介して受光し、その受光位置により投影光学系TとウエハWとの間のZ方向の距離を測定するものである。 The focus sensor AF irradiates light onto the wafer surface through an optical element closer to the wafer W side of the projection optical system T, and the light reflected by the wafer received through the optical element, the light receiving position and it measures the distance in the Z direction between the projection optical system T and the wafer W by. このようなフォーカスセンサA Such a focus sensor A
Fの構成は、例えば特開平6-66543号公報に開示されている。 Construction of F is disclosed, for example, in JP-A-6-66543.

【0043】さて、第3の実施の形態においても、添加物保管部LSTに貯蔵される高濃度の添加物水溶液を液体LQへ供給するための添加物供給管LSと、純水保管部WSTに貯蔵される純水を液体LQへ供給するための純水供給管WSとを備えており、添加物供給管LS及び純水供給管WSには、添加物水溶液及び純水の供給量を調整するための電磁弁DVLS,DVWSが設けられている。 [0043] Now, in the third embodiment, a highly concentrated additive solution that are stored in the additive storage unit LST and additive feed pipe LS for supplying the liquid LQ, the pure water storage unit WST pure water is stored and a pure water supply pipe WS to be supplied to the liquid LQ, the additive feed pipe LS and the pure water supply pipe WS, adjusts the supply amount of the additive solution and pure water solenoid valve DVLS, DVWS is provided for. また、ウエハテーブルWTには、液体LQがウエハテーブルから溢れないように液体LQを排出するための排出管Lが設けられており、この排出管Lには、液体LQの排出量を調整するための電磁弁が設けられている。 Further, the wafer table WT, the liquid LQ has discharge pipe L for discharging the liquid LQ is provided so as not to overflow from the wafer table, this discharge pipe L, for adjusting the discharge amount of the liquid LQ solenoid valve is provided for. これらの電磁弁DVLS,DVWS,DVLの開閉は、上述の第2の実施の形態と同様に、第2制御部CP These solenoid valves DVLS, DVWS, opening and closing of the DVL, like the second embodiment described above, the second control unit CP
U2により制御されている。 It is controlled by U2.

【0044】また、ウエハテーブルWT上には、投影光学系の収差を測定するための収差測定部ASと、液体L [0044] Further, on wafer table WT, and the aberration measurement part AS for measuring the aberration of the projection optical system, the liquid L
Qの添加物濃度を検出するための添加物濃度検出部DS Additives density detector DS for detecting an additive concentration of Q
とが設けられている。 Door is provided. ここで、収差測定部ASとしては、例えば特開平6-84757号公報に開示されているものを用いることができる。 Here, the aberration measurement unit AS, may be used those disclosed in Japanese Unexamined Patent Publication No. 6-84757. ここで、収差測定部AS及び添加物濃度検出部DSからの出力は、第2制御部CPU2 Here, the output from the aberration measurement unit AS and additives density detector DS is, the second control unit CPU2
へ伝達される。 It is transmitted to. また、添加物濃度検出部DSからの出力は、第2制御部CPU2を介してメモリーM1へある時点における液体LQの添加物濃度の値として保管される。 Further, the output from the addition concentration detector DS is stored as the value of the additive concentration in the liquid LQ at the time through a second control unit CPU2 is to the memory M1.

【0045】次に、第3の実施の形態の動作について説明する。 Next, the operation of the third embodiment. まず、図示なきレチクルストッカーからレチクルRが取り出されてレチクルローダ−RL上に載置される途中に、バーコードリーダーBRは、レチクルRに設けられているバーコードを読み取り、その情報を第2制御部CPU2へ伝達する。 First, in the middle, which is placed on the reticle R is taken from the defunct reticle stocker shown on the reticle loader -RL, bar code reader BR reads the bar code provided on the reticle R, the information second control It is transmitted to the Department CPU2. 第2制御部CPU2は、メモリーM1に記憶されているレチクルRの種類に対応した照明条件に関する情報を読み出し、その情報に従って、 The second control unit CPU2 reads information about the illumination conditions corresponding to the type of the reticle R which is stored in the memory M1, in accordance with the information,
可変開口絞り駆動ユニット17を制御して開口絞り16 Variable aperture stop to control the drive unit 17 aperture 16
a〜16fのうちの所定の一つを光路内に位置させる。 A predetermined one of a a~16f is positioned in the optical path.
また、第2制御部CPU2は、メモリーM1に記憶されている液体LQの屈折率の値に基づいて、その屈折率を実現するための添加物の濃度を上記(1)式から計算する。 The second control unit CPU2, based on the value of the refractive index of the liquid LQ stored in the memory M1, to calculate the concentration of additive to achieve the refractive index from the equation (1). その後、添加物濃度検出部DSにより検出されてメモリーM1に保管されている現在の添加物濃度と、計算された添加物濃度とに従って、現在の添加物濃度を計算された添加物濃度とするように、電磁弁DVLS,DV Thereafter, the current additive concentration that is stored in memory M1 is detected by the additive concentration detection unit DS, in accordance with the calculated additive concentration, so that the additive concentration calculated the current additive concentration to, electromagnetic valve DVLS, DV
WS,DVLの開閉を制御する。 WS, controls the opening and closing of the DVL.

【0046】これにより、液体LQの屈折率の値は、液体LQを含めたときの投影光学系Tの収差が補正されるものとなる。 [0046] Thus, the value of the refractive index of the liquid LQ becomes that aberration of the projection optical system T when including the liquid LQ is corrected. この後、フォーカスセンサAFによりウエハWのZ方向の位置及びティルトを検出して、ウエハW Thereafter, by detecting the position and tilt of the wafer W in the Z direction by the focus sensor AF, the wafer W
が所要の位置になるようにZアクチュエータZD1,Z Z actuator ZD1, Z as but become required position
D2,ZD3を駆動する。 D2, to drive the ZD3. この状態において、光源Sからの露光光を照明光学系を介してレチクルRへ導き、第1制御部CPU1は、レチクル干渉計RI及びウエハ干渉計WIによりレチクルR及びウエハWの位置を検出しつつ、レチクルローダ−駆動ユニットRLD及びウエハステージ駆動ユニットWDを駆動させ、レチクルR及びウエハWを投影光学系Tの投影倍率|β|の速度比の元で移動させる。 In this state, the exposure light from the light source S through the illumination optical system leads to the reticle R, the first control unit CPU1, while detecting the position of the reticle R and the wafer W by a reticle interferometer RI and wafer interferometer WI , reticle loader - drive unit RLD and drives the wafer stage driving unit WD, the reticle R and the wafer W projection magnification of the projection optical system T | move under the speed ratio of | beta. これにより、レチクルR上のパターンは、良好な結像状態のもとでウエハW上へ転写される。 Thus, the pattern on the reticle R is transferred onto the wafer W under good imaging state.

【0047】さて、投影光学系Tの結像性能(収差など)は、常に一定ではなく、温度変化や大気圧変化、投影光学系Tが露光光を吸収することによる温度上昇などにより変化する場合がある。 [0047] Now, the imaging performance of the projection optical system T (including aberration) is not always constant, temperature change or change in atmospheric pressure, if the projection optical system T is changed by such as temperature rise due to absorption of exposure light there is. そこで、第3の実施の形態では、収差測定部ASにより実際の投影光学系Tの収差(結像性能)を測定し、この測定結果に基づいて液体L Therefore, in the third embodiment, by measuring the actual aberrations of the projection optical system T (imaging performance) by the aberration measuring unit AS, the liquid L on the basis of the measurement result
Qの屈折率の値を調整する構成としている。 It is configured to adjust the value of the refractive index of Q.

【0048】具体的には、第3の実施の形態では、メモリーM1内に投影光学系の収差値に対応させた形で、その収差を補正できる液体LQの屈折率の値が記憶されている。 [0048] Specifically, in the third embodiment, in a manner that associates the aberration value of the projection optical system in the memory M1, the value of the refractive index of the liquid LQ that can correct the aberration is stored . そして、収差測定部ASにより検出された投影光学系Tの収差は、第2制御部CPU2へ伝達される。 Then, the aberration of the projection optical system T detected by the aberration measuring unit AS is transmitted to the second control unit CPU 2. 第2制御部CPU2は、メモリーM1内に記憶されている液体LQの屈折率の値を読み出し、この屈折率の値になるように添加物濃度を上記(1)式より求め、液体LQ The second control unit CPU2 reads the value of the refractive index of the liquid LQ stored in memory M1, the additive concentration such that the value of the refractive index calculated from the equation (1), the liquid LQ
がその添加物濃度となるように電磁弁DVLS,DVW There solenoid valve DVLS so that the additive concentration thereof, DVW
S,DVLの開閉を制御する。 S, controls the opening and closing of the DVL.

【0049】この構成により、投影光学系Tの環境変化(温度変化、大気圧変動、露光光吸収による変動)があってもその結像性能を良好に維持することができる。 [0049] With this configuration, environmental change of the projection optical system T (temperature changes, variations atmospheric pressure variation due to absorption of exposure light) even if it is possible to satisfactorily maintain its imaging performance. なお、この収差測定部ASによる測定は、常時行う必要はなく、所定の周期ごとに行えば良い。 The measurement by the aberration measuring unit AS does not need to be performed at all times, may be performed every predetermined period. [第4の実施の形態]次に図6を参照して、第4の実施の形態について説明する。 Referring to Fourth Embodiment Next 6, a description will be given of a fourth embodiment. 第4の実施の形態は、投影光学系とウエハとの間の光路の全てを液体で満たす構成ではなく、この光路の一部を液体で満たす構成としたものである。 Fourth embodiment, instead of the arrangement that satisfies all of the optical path between the projection optical system and the wafer with a liquid, in which a configuration satisfying a part of the optical path in the liquid.

【0050】図6(a),(b)において、図1〜3に示した第1及び第2の実施の形態と同じ機能を有する部材には同じ符号を伏してある。 [0050] FIG. 6 (a), the (b), the members having the same functions as the first and second embodiments shown in Figures 1-3 are lay the same reference numerals. 図6(a),(b)に示す第4の実施の形態では、ウエハホルダ−WTの側壁により液体LQを溜める代わりに、露光光を透過させる材料(例えば石英など)で構成された容器C1,C2中に液体LQを満たす構成が前述の第1及び第2の実施の形態とは異なる。 FIG 6 (a), in the fourth embodiment shown in (b), the wafer holder by the sidewall of -WT instead of storing the liquid LQ, the container C1 made of a material that transmits the exposing light (for example, quartz, etc.), structure filled with liquid LQ in C2 is different from the first and second embodiments described above. この構成により、前述の第1及び第2の実施の形態が有していた効果のうち、開口数増大または実効的焦点深度拡大の効果はないものの、連続的に投影光学系Tの収差(結像性能)調整が可能となる効果は有している。 This configuration of the effect had the first and second embodiments described above, although not effect the numerical aperture increases or effective focal depth expansion, the aberration of the continuous projection optical system T (binding image performance) adjustment is possible effect has.

【0051】なお、この第4の実施の形態において、液体LQが入れられている容器C1,C2を投影光学系T [0051] Incidentally, in the fourth embodiment, the container C1, C2 projection optical system T which the liquid LQ is placed
と一体に設けても良い。 It may be provided integral with. 以上の第1〜第4の実施の形態では、液体LQとして純水を用いたが純水に限られることはない。 In the above first to fourth embodiments, never but using pure water as the liquid LQ limited to pure water.

【0052】 [0052]

【発明の効果】以上に示したように本発明によれば、投影光学系の結像性能を振動なく連続的に調整をすることができる。 According to the present invention as shown in above, according to the present invention, it is possible to continuously adjusted without vibrating the imaging performance of the projection optical system. また、開口数の増大(或いは実効的な焦点深度の拡大)と結像性能の調整とを両立させることが可能となる。 Further, it is possible to achieve both coordination with imaging performance increase of the numerical aperture (or expansion of the effective depth of focus).

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の第1及び第2の実施の形態にかかる露光装置を全体的に示す概略図である。 1 is a schematic diagram illustrating generally an exposure apparatus according to the first and second embodiments of the present invention.

【図2】本発明の第1の実施の形態にかかる露光装置の要部を示す断面図である。 2 is a sectional view showing a main part of an exposure apparatus according to a first embodiment of the present invention.

【図3】本発明の第2の実施の形態にかかる露光装置の要部を示す断面図である。 3 is a sectional view showing a main part of an exposure apparatus according to a second embodiment of the present invention.

【図4】本発明の第3の実施の形態にかかる露光装置を示す概略図である。 Is a schematic diagram showing an exposure apparatus according to a third embodiment of the present invention; FIG.

【図5】本発明の第3の実施の形態にかかる露光装置の一部を示す概略図である。 5 is a schematic view showing a part of a third according to the embodiment of the exposure apparatus of the present invention.

【図6】本発明の第4の実施の形態にかかる露光装置の要部を示す断面図である。 6 is a sectional view showing a main part of an exposure apparatus according to a fourth embodiment of the present invention.

【符号の説明】 DESCRIPTION OF SYMBOLS

S…光源 T2…駆動装置 IL…照明光学系 M1…メモリー M…反射板 V…減圧管 T…投影光学系 D1、D2…電極 W…ウエハ I1,I2…イオン交換膜 LQ…液体 K1,K2…隔壁 R…レチクル H1,H2…配管 RL…レチクルローダー L…排出管 LT…ローダーテーブル LD…導入管 SS…センサー WS…純水供給管 WT…ウエハテーブル LS…添加物供給管 T1…駆動装置 S ... source T2 ... drive IL ... illumination optical system M1 ... Memory M ... reflector V ... vacuum tube T ... projection optical system D1, D2 ... electrode W ... wafer I1, I2 ... ion exchange membrane LQ ... Liquid K1, K2 ... bulkhead R ... reticle H1, H2 ... piping RL ... reticle loader L ... exhaust pipe LT ... loader table LD ... inlet SS ... sensor WS ... pure water supply pipe WT ... wafer table LS ... additive supply pipe T1 ... driving device

Claims (11)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】レチクル上に設けられたパターンを照明する照明光学系と、該パターンの像を感光性基板上に形成する投影光学系とを有し、前記投影光学系と前記感光性基板との間の光路中の少なくとも一部分に位置する液体を介して露光を行う露光装置において、 前記液体の屈折率を調整するための屈折率調整手段を有することを特徴とする露光装置。 And 1. A illumination optical system for illuminating a pattern provided on the reticle, and a projection optical system for forming an image of the pattern onto a photosensitive substrate, the projection optical system and said photosensitive substrate at least in an exposure apparatus which performs exposure through a liquid located in a part, the exposure apparatus characterized by having a refractive index adjustment means for adjusting the refractive index of the liquid in the optical path between the.
  2. 【請求項2】前記屈折率調整手段は、前記投影光学系の結像性能を補正するように前記液体の屈折率を調整することを特徴とする請求項1記載の露光装置。 Wherein said refractive index adjustment means, an exposure apparatus according to claim 1, wherein the adjusting the refractive index of the liquid so as to correct the imaging performance of the projection optical system.
  3. 【請求項3】前記投影光学系の結像性能を測定する結像性能測定手段をさらに備え、 前記屈折率調整手段は、前記結像性能を補正するように前記液体の屈折率を調整することを特徴とする請求項2 Wherein further comprising imaging performance measuring means for measuring the imaging performance of the projection optical system, the refractive index adjustment means to adjust the refractive index of the liquid so as to correct the imaging performance the features of claim 2
    記載の露光装置。 The exposure apparatus according.
  4. 【請求項4】前記投影光学系の結像性能の変動の要因の状態を検知する変動要因検知手段をさらに備え、 前記屈折率調整手段は、前記要因の状態に応じて、前記結像性能を補正するように前記液体の屈折率を調整することを特徴とする請求項1記載の露光装置。 Wherein further comprising a fluctuation factor detection means for detecting a state of factors of the variation of the imaging performance of the projection optical system, the refractive index adjusting means, depending on the state of the factor, the imaging performance the exposure apparatus according to claim 1, wherein the adjusting the refractive index of the liquid so as to correct.
  5. 【請求項5】前記照明光学系は、前記レチクルに対する照明条件を変更可能に構成され、 前記変動要因検知手段は、前記照明条件の状態を検知し、 前記屈折率調整手段は、前記照明条件の変更に応じて、 Wherein said illumination optical system is configured to change the illumination condition for said reticle, said fluctuation factor detection means detects the state of the lighting conditions, the refractive index adjustment means, the illumination conditions depending on the change,
    前記結像性能を補正するように前記液体の屈折率を調整することを特徴とする請求項4記載の露光装置。 The exposure apparatus according to claim 4, wherein the adjusting the refractive index of the liquid so as to correct the imaging performance.
  6. 【請求項6】前記変動要因検知手段は、前記レチクルの種類を判別するものであり、 前記屈折率調整手段は、前記レチクルの種類に応じて、 Wherein said fluctuation factor detection means is adapted to determine the type of the reticle, the refractive index adjusting means, depending on the type of the reticle,
    前記結像性能を補正するように前記液体の屈折率を調整することを特徴とする請求項4記載の露光装置。 The exposure apparatus according to claim 4, wherein the adjusting the refractive index of the liquid so as to correct the imaging performance.
  7. 【請求項7】前記感光性基板を保持する感光性基板ホルダーをさらに備え、 該感光性基板ホルダーは、前記投影光学系と前記感光性基板との間の光路を前記液体で満たすための側壁と、前記液体を前記感光性基板ホルダーへ供給すると共に前記感光性基板ホルダーから回収するための供給・回収ユニットとを備えることを特徴とする請求項1乃至6の何れか一項記載の露光装置。 7. further comprising a photosensitive substrate holder for holding the photosensitive substrate, said photosensitive substrate holder, a side wall to meet the optical path between the photosensitive substrate and the projection optical system in the liquid the exposure apparatus according to any one of claims 1 to 6, characterized in that it comprises a supply and recovery unit for recovering the liquid from the photosensitive substrate holder is supplied to the photosensitive substrate holder.
  8. 【請求項8】前記屈折率調整手段は、前記液体に屈折率を調整するための添加剤を供給する添加剤供給ユニットと、前記液体から前記添加剤を回収するための添加剤回収ユニットとを有することを特徴とする請求項1乃至7 Wherein said refractive index adjustment means includes an additive supply unit for supplying additives to adjust the refractive index in the liquid, an additive recovery unit for recovering the additive from the liquid claims 1 to 7, characterized in that it has
    の何れか一項記載の露光装置。 The exposure apparatus according to one of.
  9. 【請求項9】所定の照明条件のもとでレチクルを照明する工程と、前記レチクル上に設けられたパターンを投影光学系を用いて感光性基板に転写する工程とを含み、前記投影光学系からの光を所定の液体を介して前記感光性基板へ導く露光方法において、 前記投影光学系の結像性能を補正するために、前記液体の屈折率を調整する工程を含むことを特徴とする露光方法。 A step of illuminating the 9. reticle under a predetermined illumination condition, and a step of transferring onto a photosensitive substrate using a projection optical system a pattern provided on the reticle, the projection optical system the exposure method that leads to the photosensitive substrate to light through a predetermined liquid from, in order to correct the imaging performance of the projection optical system, characterized in that it comprises a step of adjusting the refractive index of the liquid exposure method.
  10. 【請求項10】所定の照明条件のもとでレチクルを照明する工程と、前記レチクル上に設けられたデバイスパターンを投影光学系を用いて感光性基板に転写する工程とを含み、前記投影光学系からの光を所定の液体を介して前記感光性基板へ導くデバイス製造方法において、 前記レチクル及び前記照明条件のうち少なくとも一方が変更されたときに、前記液体の屈折率を変更することを特徴とするデバイス製造方法。 Wherein 10. A process for illuminating a reticle under a predetermined illumination condition, and a step of transferring a device pattern provided on the reticle onto a photosensitive substrate using a projection optical system, the projection optical a device manufacturing method for guiding light from the system to the photosensitive substrate through a predetermined liquid, when at least one of the reticle and the illumination condition is changed, characterized in that to change the refractive index of the liquid device manufacturing method to be.
  11. 【請求項11】レチクル上に設けられたパターンを照明する照明光学系と、該パターンの像を感光性基板上に形成する投影光学系とを有し、前記投影光学系と前記感光性基板との間の光路中の少なくとも一部分に位置する液体を介して露光を行う露光装置の製造方法において、 前記投影光学系の結像性能を測定する工程と、 該測定された結像性能に基づいて、前記液体の屈折率の初期値を定める工程とを含むことを特徴とする露光装置の製造方法。 11. A illumination optical system for illuminating a pattern provided on the reticle, and a projection optical system for forming an image of the pattern onto a photosensitive substrate, the projection optical system and said photosensitive substrate in the manufacturing method for an exposure apparatus which performs exposure through a liquid located in at least a portion of the optical path between the, and the step of measuring the imaging performance of the projection optical system, based on the imaging performance is the measurement, manufacturing method for an exposure apparatus which comprises the step of determining the initial value of the refractive index of the liquid.
JP15198597A 1997-06-10 1997-06-10 An exposure apparatus and a manufacturing method and an exposure method and device manufacturing method thereof Expired - Lifetime JP3817836B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15198597A JP3817836B2 (en) 1997-06-10 1997-06-10 An exposure apparatus and a manufacturing method and an exposure method and device manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15198597A JP3817836B2 (en) 1997-06-10 1997-06-10 An exposure apparatus and a manufacturing method and an exposure method and device manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPH10340846A true JPH10340846A (en) 1998-12-22
JP3817836B2 JP3817836B2 (en) 2006-09-06

Family

ID=15530548

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15198597A Expired - Lifetime JP3817836B2 (en) 1997-06-10 1997-06-10 An exposure apparatus and a manufacturing method and an exposure method and device manufacturing method thereof

Country Status (1)

Country Link
JP (1) JP3817836B2 (en)

Cited By (312)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999049504A1 (en) * 1998-03-26 1999-09-30 Nikon Corporation Projection exposure method and system
WO2001060753A1 (en) * 2000-02-18 2001-08-23 Nikon Corporation Optical glass and projection aligner using the same
WO2004053954A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
WO2004053958A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
WO2004053950A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
WO2004053956A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus, exposure method and method for manufacturing device
WO2004053952A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
WO2004053955A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure system and device producing method
WO2004053953A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
JP2004207711A (en) * 2002-12-10 2004-07-22 Nikon Corp Exposure device, exposure method, and device manufacturing method
WO2004079800A1 (en) * 2003-03-04 2004-09-16 Tokyo Ohka Kogyo Co. Ltd. Immersion liquid for immersion exposure process and resist pattern forming method using such immersion liquid
WO2004086470A1 (en) * 2003-03-25 2004-10-07 Nikon Corporation Exposure system and device production method
WO2004086468A1 (en) * 2003-02-26 2004-10-07 Nikon Corporation Exposure apparatus and method, and method of producing apparatus
WO2004090956A1 (en) * 2003-04-07 2004-10-21 Nikon Corporation Exposure apparatus and method for manufacturing device
WO2004097911A1 (en) * 2003-05-01 2004-11-11 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
EP1477856A1 (en) * 2003-05-13 2004-11-17 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2004102646A1 (en) * 2003-05-15 2004-11-25 Nikon Corporation Exposure apparatus and method for manufacturing device
WO2004105106A1 (en) * 2003-05-23 2004-12-02 Nikon Corporation Exposure method, exposure device, and device manufacturing method
WO2004107417A1 (en) * 2003-05-28 2004-12-09 Nikon Corporation Exposure method, exposure device, and device manufacturing method
EP1486827A2 (en) * 2003-06-11 2004-12-15 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2004112108A1 (en) * 2003-06-13 2004-12-23 Nikon Corporation Exposure method, substrate stage, exposure apparatus and method for manufacturing device
EP1491956A1 (en) * 2003-06-27 2004-12-29 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1494079A1 (en) * 2003-06-27 2005-01-05 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005012195A (en) * 2003-05-23 2005-01-13 Nikon Corp Aligner and method of manufacturing same
EP1498778A1 (en) * 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1510870A1 (en) * 2003-08-29 2005-03-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005022615A1 (en) * 2003-08-29 2005-03-10 Nikon Corporation Liquid recovery apparatus, exposure apparatus, exposure method, and device production method
EP1522894A2 (en) * 2003-10-06 2005-04-13 Matsushita Electric Industrial Co., Ltd. Semiconductor fabrication apparatus and pattern formation method using the same
JP2005101487A (en) * 2002-12-10 2005-04-14 Nikon Corp Exposure apparatus, device manufacturing method, and exposure system
JP2005101488A (en) * 2002-12-10 2005-04-14 Nikon Corp Aligner, exposure method, and manufacturing method of device
EP1524557A1 (en) * 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1524558A1 (en) * 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2004090577A3 (en) * 2003-04-11 2005-04-21 Nippon Kogaku Kk Maintaining immersion fluid under a lithographic projection lens
WO2005036624A1 (en) * 2003-10-09 2005-04-21 Nikon Corporation Exposure apparatus, exposure method, and device producing method
EP1528432A1 (en) * 2003-10-28 2005-05-04 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1530086A1 (en) * 2003-11-05 2005-05-11 DSM IP Assets B.V. A method and an apparatus for producing micro-chips
WO2005062351A1 (en) * 2003-12-19 2005-07-07 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method
EP1420300A3 (en) * 2002-11-12 2005-08-10 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005081295A1 (en) * 2004-02-20 2005-09-01 Nikon Corporation Exposure method, exposure apparatus, exposure system and method for manufacturing device
JP2005252239A (en) * 2004-01-23 2005-09-15 Air Products & Chemicals Inc Immersion lithographic fluid
JP2005252247A (en) * 2004-02-04 2005-09-15 Nikon Corp Exposure device, exposure method, and method of fabricating the device
WO2005050324A3 (en) * 2003-11-05 2005-09-22 Leonardus Gerardus Bern Bremer A method and apparatus for producing microchips
JP2005259870A (en) * 2004-03-10 2005-09-22 Nikon Corp Substrate retainer, stage device, exposing device and exposing method
JP2005268747A (en) * 2003-10-09 2005-09-29 Nikon Corp Exposure system, method of exposure, and method of manufacturing device
US6952253B2 (en) 2002-11-12 2005-10-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US6954256B2 (en) 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
EP1611485A2 (en) * 2003-04-10 2006-01-04 Nikon Corporation Environmental system including vaccum scavange for an immersion lithography apparatus
WO2006019124A1 (en) * 2004-08-18 2006-02-23 Nikon Corporation Exposure apparatus and device manufacturing method
US7009682B2 (en) 2002-11-18 2006-03-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006041086A1 (en) * 2004-10-13 2006-04-20 Nikon Corporation Exposure device, exposure method, and device manufacturing method
WO2006041083A1 (en) * 2004-10-13 2006-04-20 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
US7034917B2 (en) 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7038760B2 (en) 2003-06-30 2006-05-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7046337B2 (en) 2002-12-10 2006-05-16 Canon Kabushiki Kaisha Exposure apparatus and method
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG121822A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP2006140449A (en) * 2004-10-05 2006-06-01 Asml Holdings Nv Lithographic apparatus and device manufacturing method
JP2006140459A (en) * 2004-10-13 2006-06-01 Nikon Corp Aligner, exposing method, and device manufacturing method
EP1670040A1 (en) * 2003-09-29 2006-06-14 Nikon Corporation Projection exposure device, projection exposure method, and device manufacturing method
US7075616B2 (en) 2002-11-12 2006-07-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006074579A1 (en) * 2005-01-14 2006-07-20 Xiao Zhu Oil immersion exposure method in chip photolithographic process
JP2006190971A (en) * 2004-10-13 2006-07-20 Nikon Corp Exposure apparatus, exposure method, and device manufacturing method
US7081943B2 (en) 2002-11-12 2006-07-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JPWO2005006417A1 (en) * 2003-07-09 2006-08-24 株式会社ニコン Exposure apparatus and device manufacturing method
US7110087B2 (en) 2003-06-30 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7110081B2 (en) 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7113259B2 (en) 2003-10-31 2006-09-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7119876B2 (en) 2004-10-18 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006523383A (en) * 2003-03-04 2006-10-12 ピクセリジェント・テクノロジーズ・エルエルシー Application of nano-sized semiconductor particles for photolithography
WO2006112699A1 (en) * 2005-04-19 2006-10-26 Asml Netherlands B.V. Liquid immersion lithography system comprising a tilted showerhead
US7133114B2 (en) 2004-09-20 2006-11-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006122578A1 (en) * 2005-05-17 2006-11-23 Freescale Semiconductor, Inc. Contaminant removal apparatus and method therefor
WO2006126522A1 (en) * 2005-05-24 2006-11-30 Nikon Corporation Exposure method, exposure apparatus and device manufacturing method
US7145630B2 (en) 2004-11-23 2006-12-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006528835A (en) * 2003-07-24 2006-12-21 カール・ツアイス・エスエムテイ・アーゲー A method of introducing a microlithographic projection exposure apparatus and the immersion liquid to the immersion space
US7158211B2 (en) 2003-09-29 2007-01-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7161663B2 (en) 2004-07-22 2007-01-09 Asml Netherlands B.V. Lithographic apparatus
US7161654B2 (en) 2004-12-02 2007-01-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007013180A (en) * 2005-06-29 2007-01-18 Qimonda Ag Fluid for immersion lithography system
US7175968B2 (en) 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US7184122B2 (en) 2003-07-24 2007-02-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7193681B2 (en) 2003-09-29 2007-03-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007073587A (en) * 2005-09-05 2007-03-22 Nikon Corp Exposure method, aligner, and method of manufacturing device
US7196770B2 (en) 2004-12-07 2007-03-27 Asml Netherlands B.V. Prewetting of substrate before immersion exposure
US7199858B2 (en) 2002-11-12 2007-04-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007103841A (en) * 2005-10-07 2007-04-19 Toshiba Corp Manufacture of semiconductor device
US7209213B2 (en) 2004-10-07 2007-04-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7224431B2 (en) 2005-02-22 2007-05-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7227619B2 (en) 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007180555A (en) * 2005-12-27 2007-07-12 Asml Netherlands Bv Exposure device and substrate edge sealing
US7248334B2 (en) 2004-12-07 2007-07-24 Asml Netherlands B.V. Sensor shield
JP2007520893A (en) * 2004-02-03 2007-07-26 ロチェスター インスティテュート オブ テクノロジー Photolithography and system using a fluid
US7251017B2 (en) 2003-04-10 2007-07-31 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
US7251013B2 (en) 2004-11-12 2007-07-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007266186A (en) * 2006-03-28 2007-10-11 Nikon Corp Aligner, method of adjusting aligner, and method of manufacturing device
JPWO2005081290A1 (en) * 2004-02-19 2007-10-25 株式会社ニコン Exposure apparatus and device manufacturing method
US7291850B2 (en) 2005-04-08 2007-11-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7295283B2 (en) 2004-04-02 2007-11-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7304715B2 (en) 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7317507B2 (en) 2005-05-03 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR100797666B1 (en) * 2006-01-16 2008-01-23 다이닛뽕스크린 세이조오 가부시키가이샤 Substrate processing apparatus
US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7330238B2 (en) 2005-03-28 2008-02-12 Asml Netherlands, B.V. Lithographic apparatus, immersion projection apparatus and device manufacturing method
JP2008504708A (en) * 2004-07-01 2008-02-14 ザ ビーオーシー グループ ピーエルシー Immersion photolithography system
US7339650B2 (en) 2003-04-09 2008-03-04 Nikon Corporation Immersion lithography fluid control system that applies force to confine the immersion liquid
US7352440B2 (en) 2004-12-10 2008-04-01 Asml Netherlands B.V. Substrate placement in immersion lithography
US7355674B2 (en) 2004-09-28 2008-04-08 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and computer program product
US7359030B2 (en) 2002-11-29 2008-04-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7365827B2 (en) 2004-12-08 2008-04-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7369968B2 (en) 2000-06-16 2008-05-06 Verisae, Inc. Enterprise energy management system
US7378025B2 (en) 2005-02-22 2008-05-27 Asml Netherlands B.V. Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method
US7379159B2 (en) 2004-05-03 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7379162B2 (en) 2003-12-08 2008-05-27 Canon Kabushiki Kaisha Substrate-holding technique
US7379155B2 (en) 2004-10-18 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2008131045A (en) * 2006-11-22 2008-06-05 Asml Holding Nv Lithographic apparatus and device manufacturing method
JP2008521224A (en) * 2004-11-18 2008-06-19 カール・ツアイス・エスエムテイ・アーゲー Projection objective of a microlithographic projection exposure apparatus
US7397532B2 (en) 2003-04-10 2008-07-08 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
JP2008160155A (en) * 2003-05-13 2008-07-10 Asml Netherlands Bv Lithographic apparatus and method of manufacturing device
US7403261B2 (en) 2004-12-15 2008-07-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7405805B2 (en) 2004-12-28 2008-07-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2008530789A (en) * 2005-02-10 2008-08-07 エーエスエムエル ネザーランズ ビー.ブイ. Immersion liquid, the exposure apparatus and an exposure method
US7411657B2 (en) 2004-11-17 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411654B2 (en) 2005-04-05 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411650B2 (en) 2003-06-19 2008-08-12 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
US7411658B2 (en) 2005-10-06 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7414699B2 (en) 2004-11-12 2008-08-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7423720B2 (en) 2004-11-12 2008-09-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2008108253A2 (en) * 2007-02-23 2008-09-12 Nikon Corporation Exposing method, exposure apparatus, device fabricating method, and substrate for immersion exposure
JP2008219020A (en) * 2003-12-23 2008-09-18 Asml Netherlands Bv Lithographic apparatus
JP2008219017A (en) * 2003-12-23 2008-09-18 Asml Netherlands Bv Lithographic apparatus, alignment apparatus, device manufacturing method, aligning method, and method of converting apparatus
US7428038B2 (en) 2005-02-28 2008-09-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid
US7433016B2 (en) 2005-05-03 2008-10-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7440871B2 (en) 2002-12-09 2008-10-21 Verisae, Inc. Method and system for tracking and reporting emissions
US7443482B2 (en) 2003-04-11 2008-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
US7446850B2 (en) 2004-12-03 2008-11-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7450217B2 (en) 2005-01-12 2008-11-11 Asml Netherlands B.V. Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby
US7456929B2 (en) 2004-10-15 2008-11-25 Nikon Corporation Exposure apparatus and device manufacturing method
US7459264B2 (en) 2004-07-07 2008-12-02 Kabushiki Kaisha Toshiba Device manufacturing method
US7468779B2 (en) 2005-06-28 2008-12-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7474218B2 (en) 2000-06-16 2009-01-06 Verisae, Inc. Method and system of asset identification and tracking for enterprise asset management
US7474379B2 (en) 2005-06-28 2009-01-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7477353B2 (en) 2004-07-07 2009-01-13 Kabushiki Kaisha Toshiba Lithography apparatus, method of forming pattern and method of manufacturing semiconductor device
US7486381B2 (en) 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7491661B2 (en) 2004-12-28 2009-02-17 Asml Netherlands B.V. Device manufacturing method, top coat material and substrate
US7496532B2 (en) 2000-06-16 2009-02-24 Verisae, Inc. Enterprise asset management system and method
US7512523B2 (en) 2000-06-16 2009-03-31 Verisae, Inc. Refrigerant loss tracking and repair
US7522258B2 (en) 2005-06-29 2009-04-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method utilizing movement of clean air to reduce contamination
US7522261B2 (en) 2004-09-24 2009-04-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7522259B2 (en) 2003-04-11 2009-04-21 Nikon Corporation Cleanup method for optics in immersion lithography
US7524772B2 (en) 2003-05-09 2009-04-28 Panasonic Corporation Pattern formation method
US7528931B2 (en) 2004-12-20 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2009105470A (en) * 2009-02-18 2009-05-14 Panasonic Corp Semiconductor manufacturing device and pattern forming method
US7535644B2 (en) 2005-08-12 2009-05-19 Asml Netherlands B.V. Lens element, lithographic apparatus, device manufacturing method, and device manufactured thereby
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7557900B2 (en) 2004-02-10 2009-07-07 Nikon Corporation Exposure apparatus, device manufacturing method, maintenance method, and exposure method
JP2009152497A (en) * 2007-12-21 2009-07-09 Nikon Corp Liquid immersion system, exposure apparatus, exposure method, and device manufacturing method
US7583357B2 (en) 2004-11-12 2009-09-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2009224806A (en) * 2003-07-16 2009-10-01 Asml Netherlands Bv Lithographic apparatus, and device manufacturing method
US7616290B2 (en) 2005-05-11 2009-11-10 Canon Kabushiki Kaisha Exposure apparatus and method
US7633073B2 (en) 2005-11-23 2009-12-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7652746B2 (en) 2005-06-21 2010-01-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7656501B2 (en) 2005-11-16 2010-02-02 Asml Netherlands B.V. Lithographic apparatus
US7670730B2 (en) 2004-12-30 2010-03-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7684010B2 (en) 2005-03-09 2010-03-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, seal structure, method of removing an object and a method of sealing
US7697110B2 (en) 2004-01-26 2010-04-13 Nikon Corporation Exposure apparatus and device manufacturing method
US7697111B2 (en) 2003-08-26 2010-04-13 Nikon Corporation Optical element and exposure apparatus
JP2010093300A (en) * 2010-01-25 2010-04-22 Nikon Corp Flow path forming member, aligner and method for manufacturing device
US7705962B2 (en) 2005-01-14 2010-04-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7705968B2 (en) 2005-03-18 2010-04-27 Nikon Corporation Plate member, substrate holding device, exposure apparatus and method, and device manufacturing method
US7733459B2 (en) 2003-08-29 2010-06-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR100967372B1 (en) * 2004-01-23 2010-07-05 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 Immersion lithography fluids
US7751027B2 (en) 2005-06-21 2010-07-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2010153922A (en) * 2004-02-09 2010-07-08 Yoshihiko Okamoto Method of manufacturing semiconductor device
US7771918B2 (en) 2004-06-09 2010-08-10 Panasonic Corporation Semiconductor manufacturing apparatus and pattern formation method
US7773195B2 (en) 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
US7791709B2 (en) 2006-12-08 2010-09-07 Asml Netherlands B.V. Substrate support and lithographic process
WO2010103822A1 (en) * 2009-03-10 2010-09-16 株式会社ニコン Exposure apparatus, exposure method and device manufacturing method
US7804576B2 (en) 2004-12-06 2010-09-28 Nikon Corporation Maintenance method, maintenance device, exposure apparatus, and device manufacturing method
US7804577B2 (en) 2005-11-16 2010-09-28 Asml Netherlands B.V. Lithographic apparatus
US7803516B2 (en) 2005-11-21 2010-09-28 Nikon Corporation Exposure method, device manufacturing method using the same, exposure apparatus, and substrate processing method and apparatus
US7804574B2 (en) * 2003-05-30 2010-09-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method using acidic liquid
JP2010219558A (en) * 2003-07-09 2010-09-30 Nikon Corp Coupling apparatus, exposure apparatus, and method for manufacturing device
US7812926B2 (en) 2005-08-31 2010-10-12 Nikon Corporation Optical element, exposure apparatus based on the use of the same, exposure method, and method for producing microdevice
US7817245B2 (en) 2003-09-29 2010-10-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7834974B2 (en) 2005-06-28 2010-11-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7839485B2 (en) 2006-01-19 2010-11-23 Nikon Corporation Movable body drive method, movable body drive system, pattern formation method, pattern forming apparatus, exposure method, exposure apparatus, and device manufacturing method
US7839483B2 (en) 2005-12-28 2010-11-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a control system
US7864292B2 (en) 2005-11-16 2011-01-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7872730B2 (en) 2006-09-15 2011-01-18 Nikon Corporation Immersion exposure apparatus and immersion exposure method, and device manufacturing method
US7876418B2 (en) 2002-12-10 2011-01-25 Nikon Corporation Optical element and projection exposure apparatus based on use of the optical element
US7877235B2 (en) 2003-01-31 2011-01-25 Verisae, Inc. Method and system for tracking and managing various operating parameters of enterprise assets
JP2011044735A (en) * 2004-07-12 2011-03-03 Nikon Corp Exposure equipment and device manufacturing method
US7924416B2 (en) 2005-06-22 2011-04-12 Nikon Corporation Measurement apparatus, exposure apparatus, and device manufacturing method
US7932996B2 (en) 2003-10-28 2011-04-26 Nikon Corporation Exposure apparatus, exposure method, and device fabrication method
US7948604B2 (en) 2002-12-10 2011-05-24 Nikon Corporation Exposure apparatus and method for producing device
US7973910B2 (en) 2006-11-17 2011-07-05 Nikon Corporation Stage apparatus and exposure apparatus
US8013975B2 (en) 2006-12-01 2011-09-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8018573B2 (en) 2005-02-22 2011-09-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8023100B2 (en) 2004-02-20 2011-09-20 Nikon Corporation Exposure apparatus, supply method and recovery method, exposure method, and device producing method
US8035799B2 (en) 2004-12-09 2011-10-11 Nikon Corporation Exposure apparatus, exposure method, and device producing method
US8035797B2 (en) 2003-09-26 2011-10-11 Nikon Corporation Projection exposure apparatus, cleaning and maintenance methods of a projection exposure apparatus, and device manufacturing method
US8035800B2 (en) 2006-03-13 2011-10-11 Nikon Corporation Exposure apparatus, maintenance method, exposure method, and method for producing device
US8040489B2 (en) 2004-10-26 2011-10-18 Nikon Corporation Substrate processing method, exposure apparatus, and method for producing device by immersing substrate in second liquid before immersion exposure through first liquid
US8040490B2 (en) 2006-12-01 2011-10-18 Nikon Corporation Liquid immersion exposure apparatus, exposure method, and method for producing device
US8045134B2 (en) 2006-03-13 2011-10-25 Asml Netherlands B.V. Lithographic apparatus, control system and device manufacturing method
CN1624588B (en) 2003-08-11 2011-11-02 台湾积体电路制造股份有限公司 Immersion lithographic system and method of manufacturing semiconductor device
US8054445B2 (en) 2005-08-16 2011-11-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8054465B2 (en) 2004-11-18 2011-11-08 Nikon Corporation Position measurement method
US8054444B2 (en) * 2004-08-03 2011-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Lens cleaning module for immersion lithography apparatus
US8064037B2 (en) 2003-08-21 2011-11-22 Nikon Corporation Immersion exposure apparatus and device manufacturing method with no liquid recovery during exposure
US8064039B2 (en) 2005-04-25 2011-11-22 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
US8064044B2 (en) 2004-01-05 2011-11-22 Nikon Corporation Exposure apparatus, exposure method, and device producing method
US8070145B2 (en) 2005-08-26 2011-12-06 Nikon Corporation Holding unit, assembly system, sputtering unit, and processing method and processing unit
US8089608B2 (en) 2005-04-18 2012-01-03 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8102512B2 (en) 2004-09-17 2012-01-24 Nikon Corporation Substrate holding device, exposure apparatus, and device manufacturing method
US8111374B2 (en) 2005-09-09 2012-02-07 Nikon Corporation Analysis method, exposure method, and device manufacturing method
US8134681B2 (en) 2006-02-17 2012-03-13 Nikon Corporation Adjustment method, substrate processing method, substrate processing apparatus, exposure apparatus, inspection apparatus, measurement and/or inspection system, processing apparatus, computer system, program and information recording medium
US8159065B2 (en) 2009-03-06 2012-04-17 Hynix Semiconductor Inc. Semiconductor package having an internal cooling system
US8164734B2 (en) 2004-06-16 2012-04-24 Asml Netherlands B.V. Vacuum system for immersion photolithography
US8164736B2 (en) 2007-05-29 2012-04-24 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US8169591B2 (en) 2004-08-03 2012-05-01 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8179517B2 (en) 2005-06-30 2012-05-15 Nikon Corporation Exposure apparatus and method, maintenance method for exposure apparatus, and device manufacturing method
US8208124B2 (en) 2003-08-29 2012-06-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8208119B2 (en) 2004-02-04 2012-06-26 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP2012142609A (en) * 2003-12-15 2012-07-26 Nikon Corp Stage device, exposure equipment, and device manufacturing method
US8236467B2 (en) 2005-04-28 2012-08-07 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
US8237915B2 (en) 2002-12-10 2012-08-07 Carl Zeiss Smt Gmbh Method for improving an optical imaging property of a projection objective of a microlithographic projection exposure apparatus
US8248577B2 (en) 2005-05-03 2012-08-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8253921B2 (en) 2003-09-03 2012-08-28 Nikon Corporation Exposure apparatus and device fabricating method
US8294873B2 (en) 2004-11-11 2012-10-23 Nikon Corporation Exposure method, device manufacturing method, and substrate
US8325326B2 (en) 2004-06-07 2012-12-04 Nikon Corporation Stage unit, exposure apparatus, and exposure method
US8330939B2 (en) 2004-11-01 2012-12-11 Nikon Corporation Immersion exposure apparatus and device manufacturing method with a liquid recovery port provided on at least one of a first stage and second stage
KR101213283B1 (en) 2004-07-01 2012-12-17 에드워즈 리미티드 Performing immersion photolithography system and immersion photolithography method
US8368870B2 (en) 2004-06-21 2013-02-05 Nikon Corporation Exposure apparatus and device manufacturing method
US8373843B2 (en) 2004-06-10 2013-02-12 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8411271B2 (en) 2005-12-28 2013-04-02 Nikon Corporation Pattern forming method, pattern forming apparatus, and device manufacturing method
US8477283B2 (en) 2006-05-10 2013-07-02 Nikon Corporation Exposure apparatus and device manufacturing method
US8482716B2 (en) 2004-06-10 2013-07-09 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8488099B2 (en) 2004-04-19 2013-07-16 Nikon Corporation Exposure apparatus and device manufacturing method
US8508713B2 (en) 2004-06-10 2013-08-13 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20130271945A1 (en) 2004-02-06 2013-10-17 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US8570484B2 (en) 2006-08-30 2013-10-29 Nikon Corporation Immersion exposure apparatus, device manufacturing method, cleaning method, and cleaning member to remove foreign substance using liquid
CN103439869A (en) * 2013-09-02 2013-12-11 上海华力微电子有限公司 Method for measuring graphic density
US8634053B2 (en) 2006-12-07 2014-01-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8638422B2 (en) 2005-03-18 2014-01-28 Nikon Corporation Exposure method, exposure apparatus, method for producing device, and method for evaluating exposure apparatus
CN103543611A (en) * 2012-07-16 2014-01-29 台湾积体电路制造股份有限公司 Lithography process
US8654308B2 (en) 2004-07-12 2014-02-18 Nikon Corporation Method for determining exposure condition, exposure method, exposure apparatus, and method for manufacturing device
US8675174B2 (en) 2004-09-17 2014-03-18 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8698998B2 (en) 2004-06-21 2014-04-15 Nikon Corporation Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device
US8705008B2 (en) 2004-06-09 2014-04-22 Nikon Corporation Substrate holding unit, exposure apparatus having same, exposure method, method for producing device, and liquid repellant plate
US8717533B2 (en) 2004-06-10 2014-05-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8721803B2 (en) 2006-12-05 2014-05-13 Nikon Corporation Cleaning liquid, cleaning method, liquid generating apparatus, exposure apparatus, and device fabricating method
US8780326B2 (en) 2005-09-09 2014-07-15 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
KR101437254B1 (en) * 2003-12-03 2014-09-02 가부시키가이샤 니콘 Exposure apparatus, exposure method, device producing method, and optical component
US8860922B2 (en) 2003-10-28 2014-10-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8860923B2 (en) 2003-10-28 2014-10-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8879159B2 (en) 2005-06-14 2014-11-04 Carl Zeiss Smt Gmbh Lithography projection objective, and a method for correcting image defects of the same
US8891053B2 (en) 2008-09-10 2014-11-18 Asml Netherlands B.V. Lithographic apparatus, method of manufacturing an article for a lithographic apparatus and device manufacturing method
US8902401B2 (en) 2006-05-09 2014-12-02 Carl Zeiss Smt Gmbh Optical imaging device with thermal attenuation
CN104216233A (en) * 2013-06-05 2014-12-17 中芯国际集成电路制造(上海)有限公司 Exposure method
US8928856B2 (en) 2003-10-31 2015-01-06 Nikon Corporation Exposure apparatus and device fabrication method
US8937710B2 (en) 2006-08-31 2015-01-20 Nikon Corporation Exposure method and apparatus compensating measuring error of encoder due to grating section and displacement of movable body in Z direction
US8937704B2 (en) 2003-07-31 2015-01-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a resistivity sensor
US8941811B2 (en) 2004-12-20 2015-01-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8947629B2 (en) 2007-05-04 2015-02-03 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US8947637B2 (en) 2003-08-29 2015-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8964163B2 (en) 2003-07-28 2015-02-24 Asml Netherlands B.V. Immersion lithographic apparatus and device manufacturing method with a projection system having a part movable relative to another part
US9013672B2 (en) 2007-05-04 2015-04-21 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
CN104570615A (en) * 2013-10-29 2015-04-29 上海微电子装备有限公司 Scanning exposure device
US9097992B2 (en) 2004-08-19 2015-08-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9104117B2 (en) 2004-07-07 2015-08-11 Bob Streefkerk Lithographic apparatus having a liquid detection system
US9134622B2 (en) 2003-11-14 2015-09-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9207543B2 (en) 2004-04-14 2015-12-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a groove to collect liquid
US9224632B2 (en) 2004-12-15 2015-12-29 Nikon Corporation Substrate holding apparatus, exposure apparatus, and device fabricating method
US9239524B2 (en) 2005-03-30 2016-01-19 Nikon Corporation Exposure condition determination method, exposure method, exposure apparatus, and device manufacturing method involving detection of the situation of a liquid immersion region
US9256136B2 (en) 2010-04-22 2016-02-09 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method involving gas supply
JP2016053734A (en) * 2003-07-09 2016-04-14 株式会社ニコン Exposure device and method for producing device
US9329060B2 (en) 2006-02-21 2016-05-03 Nikon Corporation Measuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure apparatus and method, and device manufacturing method
US9341954B2 (en) 2007-10-24 2016-05-17 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9377698B2 (en) 2006-09-01 2016-06-28 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method
US9411247B2 (en) 2004-06-10 2016-08-09 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US9423698B2 (en) 2003-10-28 2016-08-23 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
US9429495B2 (en) 2004-06-04 2016-08-30 Carl Zeiss Smt Gmbh System for measuring the image quality of an optical imaging system
US9436095B2 (en) 2004-01-20 2016-09-06 Carl Zeiss Smt Gmbh Exposure apparatus and measuring device for a projection lens
US9477158B2 (en) 2006-04-14 2016-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9551943B2 (en) 2003-06-19 2017-01-24 Nikon Corporation Exposure apparatus and device manufacturing method
US9623436B2 (en) 2004-05-18 2017-04-18 Asml Netherlands B.V. Active drying station and method to remove immersion liquid using gas flow supply with gas outlet between two gas inlets
US9632425B2 (en) 2006-12-07 2017-04-25 Asml Holding N.V. Lithographic apparatus, a dryer and a method of removing liquid from a surface
US9632431B2 (en) 2004-02-02 2017-04-25 Nikon Corporation Lithographic apparatus and method having substrate and sensor tables
US9645505B2 (en) 2004-06-09 2017-05-09 Nikon Corporation Immersion exposure apparatus and device manufacturing method with measuring device to measure specific resistance of liquid
US9678437B2 (en) 2003-04-09 2017-06-13 Nikon Corporation Illumination optical apparatus having distribution changing member to change light amount and polarization member to set polarization in circumference direction
US9678332B2 (en) 2007-11-06 2017-06-13 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
US9690214B2 (en) 2006-02-21 2017-06-27 Nikon Corporation Pattern forming apparatus and pattern forming method, movable body drive system and movable body drive method, exposure apparatus and exposure method, and device manufacturing method
US9746781B2 (en) 2005-01-31 2017-08-29 Nikon Corporation Exposure apparatus and method for producing device
US9760026B2 (en) 2003-07-28 2017-09-12 Nikon Corporation Exposure apparatus, method for producing device, and method for controlling exposure apparatus
US9817319B2 (en) 2003-09-03 2017-11-14 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US9857697B2 (en) 2006-02-21 2018-01-02 Nikon Corporation Pattern forming apparatus, mark detecting apparatus, exposure apparatus, pattern forming method, exposure method, and device manufacturing method
US9874822B2 (en) 2006-09-01 2018-01-23 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
US9885872B2 (en) 2003-11-20 2018-02-06 Nikon Corporation Illumination optical apparatus, exposure apparatus, and exposure method with optical integrator and polarization member that changes polarization state of light
US9891539B2 (en) 2005-05-12 2018-02-13 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US9939739B2 (en) 2003-05-23 2018-04-10 Nikon Corporation Exposure apparatus and method for producing device
US9958792B2 (en) 2006-08-31 2018-05-01 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
USRE46933E1 (en) 2005-04-08 2018-07-03 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US10025194B2 (en) 2003-09-29 2018-07-17 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US10061207B2 (en) 2005-12-02 2018-08-28 Asml Netherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US10067428B2 (en) 2006-08-31 2018-09-04 Nikon Corporation Movable body drive system and movable body drive method, pattern formation apparatus and method, exposure apparatus and method, device manufacturing method, and decision-making method
US10101666B2 (en) 2007-10-12 2018-10-16 Nikon Corporation Illumination optical apparatus, exposure apparatus, and device manufacturing method
US10126661B2 (en) 2004-03-25 2018-11-13 Nikon Corporation Exposure apparatus and device fabrication method
US10151983B2 (en) 2004-02-03 2018-12-11 Nikon Corporation Exposure apparatus and device manufacturing method

Cited By (815)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999049504A1 (en) * 1998-03-26 1999-09-30 Nikon Corporation Projection exposure method and system
JP4839563B2 (en) * 2000-02-18 2011-12-21 株式会社ニコン Optical glasses and projection exposure apparatus using the same
WO2001060753A1 (en) * 2000-02-18 2001-08-23 Nikon Corporation Optical glass and projection aligner using the same
US6816235B2 (en) 2000-02-18 2004-11-09 Nikon Corporation Optical glass and projection exposure apparatus using the same
US7496532B2 (en) 2000-06-16 2009-02-24 Verisae, Inc. Enterprise asset management system and method
US7512523B2 (en) 2000-06-16 2009-03-31 Verisae, Inc. Refrigerant loss tracking and repair
US7474218B2 (en) 2000-06-16 2009-01-06 Verisae, Inc. Method and system of asset identification and tracking for enterprise asset management
US7369968B2 (en) 2000-06-16 2008-05-06 Verisae, Inc. Enterprise energy management system
US7081943B2 (en) 2002-11-12 2006-07-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7193232B2 (en) 2002-11-12 2007-03-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method with substrate measurement not through liquid
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7224436B2 (en) 2002-11-12 2007-05-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9885965B2 (en) 2002-11-12 2018-02-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9366972B2 (en) 2002-11-12 2016-06-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9588442B2 (en) 2002-11-12 2017-03-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8344341B2 (en) 2002-11-12 2013-01-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7199858B2 (en) 2002-11-12 2007-04-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1420300A3 (en) * 2002-11-12 2005-08-10 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2010135857A (en) * 2002-11-12 2010-06-17 Asml Netherlands Bv Lithography apparatus and method for fabricating device
US7110081B2 (en) 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9195153B2 (en) 2002-11-12 2015-11-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7932999B2 (en) 2002-11-12 2011-04-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7795603B2 (en) 2002-11-12 2010-09-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9097987B2 (en) 2002-11-12 2015-08-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7075616B2 (en) 2002-11-12 2006-07-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9091940B2 (en) 2002-11-12 2015-07-28 Asml Netherlands B.V. Lithographic apparatus and method involving a fluid inlet and a fluid outlet
US9057967B2 (en) 2002-11-12 2015-06-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007142460A (en) * 2002-11-12 2007-06-07 Asml Netherlands Bv Lithographic projection apparatus
SG121822A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US9360765B2 (en) 2002-11-12 2016-06-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4567013B2 (en) * 2002-11-12 2010-10-20 エーエスエムエル ネザーランズ ビー.ブイ. Lithographic projection apparatus
US7482611B2 (en) 2002-11-12 2009-01-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10261428B2 (en) 2002-11-12 2019-04-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10222706B2 (en) 2002-11-12 2019-03-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9740107B2 (en) 2002-11-12 2017-08-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8446568B2 (en) 2002-11-12 2013-05-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US6952253B2 (en) 2002-11-12 2005-10-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10191389B2 (en) 2002-11-12 2019-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7009682B2 (en) 2002-11-18 2006-03-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7119881B2 (en) 2002-11-18 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7359030B2 (en) 2002-11-29 2008-04-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7647207B2 (en) 2002-12-09 2010-01-12 Verisae, Inc. Method and system for tracking and reporting emissions
US7440871B2 (en) 2002-12-09 2008-10-21 Verisae, Inc. Method and system for tracking and reporting emissions
JP2004207711A (en) * 2002-12-10 2004-07-22 Nikon Corp Exposure device, exposure method, and device manufacturing method
WO2004053953A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
US7639343B2 (en) 2002-12-10 2009-12-29 Nikon Corporation Exposure apparatus and device manufacturing method
US7466392B2 (en) 2002-12-10 2008-12-16 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8237915B2 (en) 2002-12-10 2012-08-07 Carl Zeiss Smt Gmbh Method for improving an optical imaging property of a projection objective of a microlithographic projection exposure apparatus
US7589821B2 (en) 2002-12-10 2009-09-15 Nikon Corporation Exposure apparatus and device manufacturing method
JP2005101488A (en) * 2002-12-10 2005-04-14 Nikon Corp Aligner, exposure method, and manufacturing method of device
US7460207B2 (en) 2002-12-10 2008-12-02 Nikon Corporation Exposure apparatus and method for producing device
JP2005101487A (en) * 2002-12-10 2005-04-14 Nikon Corp Exposure apparatus, device manufacturing method, and exposure system
WO2004053956A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus, exposure method and method for manufacturing device
US7446851B2 (en) 2002-12-10 2008-11-04 Nikon Corporation Exposure apparatus and device manufacturing method
US7948604B2 (en) 2002-12-10 2011-05-24 Nikon Corporation Exposure apparatus and method for producing device
US7505111B2 (en) 2002-12-10 2009-03-17 Nikon Corporation Exposure apparatus and device manufacturing method
US7436487B2 (en) 2002-12-10 2008-10-14 Nikon Corporation Exposure apparatus and method for producing device
US7046337B2 (en) 2002-12-10 2006-05-16 Canon Kabushiki Kaisha Exposure apparatus and method
US7436486B2 (en) 2002-12-10 2008-10-14 Nikon Corporation Exposure apparatus and device manufacturing method
WO2004053955A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure system and device producing method
WO2004053950A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
US7379158B2 (en) 2002-12-10 2008-05-27 Nikon Corporation Exposure apparatus and method for producing device
US7515246B2 (en) 2002-12-10 2009-04-07 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP4525827B2 (en) * 2002-12-10 2010-08-18 株式会社ニコン Exposure apparatus and device manufacturing method, an exposure system
US7589820B2 (en) 2002-12-10 2009-09-15 Nikon Corporation Exposure apparatus and method for producing device
WO2004053958A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
JP2009105473A (en) * 2002-12-10 2009-05-14 Nikon Corp Exposure apparatus, device manufacturing method, and exposure system
US7876418B2 (en) 2002-12-10 2011-01-25 Nikon Corporation Optical element and projection exposure apparatus based on use of the optical element
WO2004053954A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
WO2004053952A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
JP2009105472A (en) * 2002-12-10 2009-05-14 Nikon Corp Vacuum system, immersion exposure device and method for exposure, and method for manufacturing device
US8767173B2 (en) 2002-12-10 2014-07-01 Nikon Corporation Optical element and projection exposure apparatus based on use of the optical element
JP2009105471A (en) * 2002-12-10 2009-05-14 Nikon Corp Exposure apparatus and method of manufacturing device
US7126667B2 (en) 2002-12-10 2006-10-24 Canon Kk Exposure apparatus and method
US7877235B2 (en) 2003-01-31 2011-01-25 Verisae, Inc. Method and system for tracking and managing various operating parameters of enterprise assets
JP2018106206A (en) * 2003-02-26 2018-07-05 株式会社ニコン Exposure apparatus, exposure method, and method for producing device
JP2014112716A (en) * 2003-02-26 2014-06-19 Nikon Corp Exposure equipment, exposure method, and device manufacturing method
JP2009147386A (en) * 2003-02-26 2009-07-02 Nikon Corp Exposure apparatus and method of producing device
KR101288767B1 (en) * 2003-02-26 2013-07-23 가부시키가이샤 니콘 Exposure apparatus and method, and method of producing apparatus
US7535550B2 (en) 2003-02-26 2009-05-19 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7542128B2 (en) 2003-02-26 2009-06-02 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP2010028127A (en) * 2003-02-26 2010-02-04 Nikon Corp Exposure apparatus, exposure method and device manufacturing method
JP2016075963A (en) * 2003-02-26 2016-05-12 株式会社ニコン Exposure apparatus, exposure method, and method for producing device
US7268854B2 (en) 2003-02-26 2007-09-11 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP2014112741A (en) * 2003-02-26 2014-06-19 Nikon Corp Exposure equipment, exposure method, and device manufacturing method
US9766555B2 (en) 2003-02-26 2017-09-19 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP2015121825A (en) * 2003-02-26 2015-07-02 株式会社ニコン Exposure equipment, exposure method, and device manufacturing method
WO2004086468A1 (en) * 2003-02-26 2004-10-07 Nikon Corporation Exposure apparatus and method, and method of producing apparatus
JP2012129565A (en) * 2003-02-26 2012-07-05 Nikon Corp Exposure equipment, exposure method, and device manufacturing method
JP2011023765A (en) * 2003-02-26 2011-02-03 Nikon Corp Exposure apparatus, exposure method, and method of producing device
KR101169288B1 (en) 2003-02-26 2012-08-02 가부시키가이샤 니콘 Exposure apparatus and method, and method of manufacturing device
CN102495540A (en) * 2003-02-26 2012-06-13 株式会社尼康 Exposure apparatus, exposure method, and method for producing device
US7453550B2 (en) 2003-02-26 2008-11-18 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP4640516B2 (en) * 2003-02-26 2011-03-02 株式会社ニコン Exposure apparatus, and device manufacturing method
US10180632B2 (en) 2003-02-26 2019-01-15 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP2017068287A (en) * 2003-02-26 2017-04-06 株式会社ニコン Exposure apparatus, exposure method, and method for producing device
JP2009302596A (en) * 2003-02-26 2009-12-24 Nikon Corp Exposure apparatus, exposure method, and method for manufacturing device
WO2004079800A1 (en) * 2003-03-04 2004-09-16 Tokyo Ohka Kogyo Co. Ltd. Immersion liquid for immersion exposure process and resist pattern forming method using such immersion liquid
JP2006523383A (en) * 2003-03-04 2006-10-12 ピクセリジェント・テクノロジーズ・エルエルシー Application of nano-sized semiconductor particles for photolithography
JP2012080148A (en) * 2003-03-25 2012-04-19 Nikon Corp Exposure apparatus, and device manufacturing method
JP2014030061A (en) * 2003-03-25 2014-02-13 Nikon Corp Exposure apparatus, and device manufacturing method
WO2004086470A1 (en) * 2003-03-25 2004-10-07 Nikon Corporation Exposure system and device production method
JP2009158977A (en) * 2003-03-25 2009-07-16 Nikon Corp Exposure apparatus and device fabrication method
JP2011044736A (en) * 2003-03-25 2011-03-03 Nikon Corp Exposure apparatus, and device manufacturing method
WO2004090956A1 (en) * 2003-04-07 2004-10-21 Nikon Corporation Exposure apparatus and method for manufacturing device
US9618852B2 (en) 2003-04-09 2017-04-11 Nikon Corporation Immersion lithography fluid control system regulating flow velocity of gas based on position of gas outlets
US9885959B2 (en) 2003-04-09 2018-02-06 Nikon Corporation Illumination optical apparatus having deflecting member, lens, polarization member to set polarization in circumference direction, and optical integrator
US7339650B2 (en) 2003-04-09 2008-03-04 Nikon Corporation Immersion lithography fluid control system that applies force to confine the immersion liquid
US8497973B2 (en) 2003-04-09 2013-07-30 Nikon Corporation Immersion lithography fluid control system regulating gas velocity based on contact angle
US9678437B2 (en) 2003-04-09 2017-06-13 Nikon Corporation Illumination optical apparatus having distribution changing member to change light amount and polarization member to set polarization in circumference direction
US8797500B2 (en) 2003-04-09 2014-08-05 Nikon Corporation Immersion lithography fluid control system changing flow velocity of gas outlets based on motion of a surface
US7345742B2 (en) 2003-04-10 2008-03-18 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
US9658537B2 (en) 2003-04-10 2017-05-23 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
US7251017B2 (en) 2003-04-10 2007-07-31 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
US7397532B2 (en) 2003-04-10 2008-07-08 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
CN103439864A (en) * 2003-04-10 2013-12-11 株式会社尼康 Environmental system including vaccum scavange for an immersion lithography apparatus
US9632427B2 (en) 2003-04-10 2017-04-25 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
US9910370B2 (en) 2003-04-10 2018-03-06 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
US9977350B2 (en) 2003-04-10 2018-05-22 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
KR101364889B1 (en) * 2003-04-10 2014-02-19 가부시키가이샤 니콘 Environmental system including vaccum scavange for an immersion lithography apparatus
EP3352010A1 (en) * 2003-04-10 2018-07-25 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
EP2667253A1 (en) * 2003-04-10 2013-11-27 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
EP1611485A2 (en) * 2003-04-10 2006-01-04 Nikon Corporation Environmental system including vaccum scavange for an immersion lithography apparatus
US8243253B2 (en) 2003-04-10 2012-08-14 Nikon Corporation Lyophobic run-off path to collect liquid for an immersion lithography apparatus
EP2667252A1 (en) * 2003-04-10 2013-11-27 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
EP1611485A4 (en) * 2003-04-10 2008-10-29 Nikon Corp Environmental system including vaccum scavange for an immersion lithography apparatus
US9946163B2 (en) 2003-04-11 2018-04-17 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US7443482B2 (en) 2003-04-11 2008-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
KR101498405B1 (en) * 2003-04-11 2015-03-04 가부시키가이샤 니콘 Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US8059258B2 (en) 2003-04-11 2011-11-15 Nikon Corporation Liquid jet and recovery system for immersion lithography
US9500960B2 (en) 2003-04-11 2016-11-22 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US10185222B2 (en) 2003-04-11 2019-01-22 Nikon Corporation Liquid jet and recovery system for immersion lithography
JP2012084903A (en) * 2003-04-11 2012-04-26 Nikon Corp Immersion lithography apparatus and device manufacturing method
KR101177332B1 (en) 2003-04-11 2012-08-30 가부시키가이샤 니콘 Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
KR20150122363A (en) * 2003-04-11 2015-11-02 가부시키가이샤 니콘 Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
WO2004090577A3 (en) * 2003-04-11 2005-04-21 Nippon Kogaku Kk Maintaining immersion fluid under a lithographic projection lens
US9785057B2 (en) 2003-04-11 2017-10-10 Nikon Corporation Liquid jet and recovery system for immersion lithography
EP2161619A1 (en) * 2003-04-11 2010-03-10 Nikon Corporation Cleanup method for optics in immersion lithography
US7522259B2 (en) 2003-04-11 2009-04-21 Nikon Corporation Cleanup method for optics in immersion lithography
US9958786B2 (en) 2003-04-11 2018-05-01 Nikon Corporation Cleanup method for optics in immersion lithography using object on wafer holder in place of wafer
JP2012074729A (en) * 2003-04-11 2012-04-12 Nikon Corp Immersion lithographic apparatus and device manufacturing method
US7471374B2 (en) 2003-05-01 2008-12-30 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
WO2004097911A1 (en) * 2003-05-01 2004-11-11 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US8080364B2 (en) 2003-05-09 2011-12-20 Panasonic Corporation Pattern formation method
US7524772B2 (en) 2003-05-09 2009-04-28 Panasonic Corporation Pattern formation method
EP2270599A1 (en) * 2003-05-13 2011-01-05 ASML Netherlands BV Lithographic apparatus
JP2008160155A (en) * 2003-05-13 2008-07-10 Asml Netherlands Bv Lithographic apparatus and method of manufacturing device
US8964164B2 (en) 2003-05-13 2015-02-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9798246B2 (en) 2003-05-13 2017-10-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1477856A1 (en) * 2003-05-13 2004-11-17 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2282233A1 (en) * 2003-05-13 2011-02-09 ASML Netherlands BV Lithographic apparatus
US9477160B2 (en) 2003-05-13 2016-10-25 Asml Netherland B.V. Lithographic apparatus and device manufacturing method
JPWO2004102646A1 (en) * 2003-05-15 2006-07-13 株式会社ニコン Exposure apparatus and device manufacturing method
WO2004102646A1 (en) * 2003-05-15 2004-11-25 Nikon Corporation Exposure apparatus and method for manufacturing device
JP2017037345A (en) * 2003-05-23 2017-02-16 株式会社ニコン Exposure apparatus, exposure method, and method for manufacturing device
JP2014199947A (en) * 2003-05-23 2014-10-23 株式会社ニコン Exposure device, exposure method, and device manufacturing method
KR101464098B1 (en) * 2003-05-23 2014-11-21 가부시키가이샤 니콘 Exposure method, exposure device, and device manufacturing method
JP2015163996A (en) * 2003-05-23 2015-09-10 株式会社ニコン Exposure device, exposure method, and device manufacturing method
US9939739B2 (en) 2003-05-23 2018-04-10 Nikon Corporation Exposure apparatus and method for producing device
KR101102286B1 (en) 2003-05-23 2012-01-03 가부시키가이샤 니콘 Exposure method, exposure device, and device manufacturing method
US9977336B2 (en) 2003-05-23 2018-05-22 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
TWI612557B (en) * 2003-05-23 2018-01-21 Nikon Corp
KR20160009710A (en) * 2003-05-23 2016-01-26 가부시키가이샤 니콘 Exposure method, exposure device, and device manufacturing method
KR101472249B1 (en) * 2003-05-23 2014-12-11 가부시키가이샤 니콘 Exposure method, exposure device, and device manufacturing method
JP2013153214A (en) * 2003-05-23 2013-08-08 Nikon Corp Exposure device, exposure method, and device manufacturing method
KR101311564B1 (en) * 2003-05-23 2013-09-26 가부시키가이샤 니콘 Exposure method, exposure device, and device manufacturing method
WO2004105106A1 (en) * 2003-05-23 2004-12-02 Nikon Corporation Exposure method, exposure device, and device manufacturing method
JP2005012195A (en) * 2003-05-23 2005-01-13 Nikon Corp Aligner and method of manufacturing same
US9933708B2 (en) 2003-05-23 2018-04-03 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
KR101498439B1 (en) * 2003-05-23 2015-03-05 가부시키가이샤 니콘 Exposure method, exposure device, and device manufacturing method
US10082739B2 (en) 2003-05-28 2018-09-25 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
WO2004107417A1 (en) * 2003-05-28 2004-12-09 Nikon Corporation Exposure method, exposure device, and device manufacturing method
US7808611B2 (en) 2003-05-30 2010-10-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method using acidic liquid
US7804574B2 (en) * 2003-05-30 2010-09-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method using acidic liquid
US9541843B2 (en) 2003-06-09 2017-01-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a sensor detecting a radiation beam through liquid
JP2012114485A (en) * 2003-06-09 2012-06-14 Asml Netherlands Bv Lithographic device and device manufacturing method
JP2012054601A (en) * 2003-06-09 2012-03-15 Asml Netherlands Bv Lithographic projection apparatus
US9081299B2 (en) 2003-06-09 2015-07-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving removal of liquid entering a gap
JP4558762B2 (en) * 2003-06-09 2010-10-06 エーエスエムエル ネザーランズ ビー.ブイ. Lithographic apparatus and device manufacturing method
JP2012114484A (en) * 2003-06-09 2012-06-14 Asml Netherlands Bv Lithographic device and device manufacturing method
JP2007235179A (en) * 2003-06-09 2007-09-13 Asml Netherlands Bv Lithography apparatus and device manufacturing method
US9152058B2 (en) 2003-06-09 2015-10-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a member and a fluid opening
US10180629B2 (en) 2003-06-09 2019-01-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2010161421A (en) * 2003-06-09 2010-07-22 Asml Netherlands Bv Lithography apparatus and method for manufacturing device
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1486827A3 (en) * 2003-06-11 2005-03-09 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1486827A2 (en) * 2003-06-11 2004-12-15 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US9964858B2 (en) 2003-06-11 2018-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9110389B2 (en) 2003-06-11 2015-08-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9846371B2 (en) 2003-06-13 2017-12-19 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
TWI607292B (en) * 2003-06-13 2017-12-01 Nikon Corp
JP2013016839A (en) * 2003-06-13 2013-01-24 Nikon Corp Substrate stage, exposure device, and device manufacturing method
JP2012248892A (en) * 2003-06-13 2012-12-13 Nikon Corp Substrate stage, exposure device, and device manufacturing method
JP2010010703A (en) * 2003-06-13 2010-01-14 Nikon Corp Substrate stage, exposure device, and device manufacturing method
WO2004112108A1 (en) * 2003-06-13 2004-12-23 Nikon Corporation Exposure method, substrate stage, exposure apparatus and method for manufacturing device
US10191388B2 (en) 2003-06-19 2019-01-29 Nikon Corporation Exposure apparatus, and device manufacturing method
US10007188B2 (en) 2003-06-19 2018-06-26 Nikon Corporation Exposure apparatus and device manufacturing method
US9551943B2 (en) 2003-06-19 2017-01-24 Nikon Corporation Exposure apparatus and device manufacturing method
US9715178B2 (en) 2003-06-19 2017-07-25 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP2011066458A (en) * 2003-06-19 2011-03-31 Asml Holding Nv Immersion photolithography system
CN101241308A (en) * 2003-06-19 2008-08-13 Asml控股股份有限公司 Immersion photolithography system and method for exposing substrate
US7411650B2 (en) 2003-06-19 2008-08-12 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
US9709899B2 (en) 2003-06-19 2017-07-18 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
US9810995B2 (en) 2003-06-19 2017-11-07 Nikon Corporation Exposure apparatus and device manufacturing method
WO2005001572A3 (en) * 2003-06-27 2005-04-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1494079A1 (en) * 2003-06-27 2005-01-05 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1498778A1 (en) * 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2009514183A (en) * 2003-06-27 2009-04-02 エーエスエムエル ネザーランズ ビー.ブイ. Lithographic apparatus and device manufacturing method
US7012673B2 (en) 2003-06-27 2006-03-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
USRE42741E1 (en) 2003-06-27 2011-09-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1491956A1 (en) * 2003-06-27 2004-12-29 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7119874B2 (en) 2003-06-27 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1494075B1 (en) * 2003-06-30 2008-06-25 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
US7038760B2 (en) 2003-06-30 2006-05-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7110087B2 (en) 2003-06-30 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7433019B2 (en) 2003-07-09 2008-10-07 Nikon Corporation Exposure apparatus and device manufacturing method
JPWO2005006417A1 (en) * 2003-07-09 2006-08-24 株式会社ニコン Exposure apparatus and device manufacturing method
JP2010263230A (en) * 2003-07-09 2010-11-18 Nikon Corp Exposure apparatus, and method for manufacturing device
JP2010219558A (en) * 2003-07-09 2010-09-30 Nikon Corp Coupling apparatus, exposure apparatus, and method for manufacturing device
CN102854755A (en) * 2003-07-09 2013-01-02 株式会社尼康 Exposure apparatus
US9977352B2 (en) 2003-07-09 2018-05-22 Nikon Corporation Exposure apparatus and device manufacturing method
JP2016053734A (en) * 2003-07-09 2016-04-14 株式会社ニコン Exposure device and method for producing device
US7738074B2 (en) 2003-07-16 2010-06-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2014241425A (en) * 2003-07-16 2014-12-25 エーエスエムエル ネザーランズ ビー.ブイ. Lithographic apparatus
JP2012151488A (en) * 2003-07-16 2012-08-09 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP2009224806A (en) * 2003-07-16 2009-10-01 Asml Netherlands Bv Lithographic apparatus, and device manufacturing method
JP2010153913A (en) * 2003-07-16 2010-07-08 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US10151989B2 (en) 2003-07-16 2018-12-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8913223B2 (en) 2003-07-16 2014-12-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8711323B2 (en) 2003-07-16 2014-04-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8823920B2 (en) 2003-07-16 2014-09-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2014158053A (en) * 2003-07-16 2014-08-28 Asml Netherlands Bv Lithographic apparatus
JP2012151489A (en) * 2003-07-16 2012-08-09 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US9733575B2 (en) 2003-07-16 2017-08-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2015163997A (en) * 2003-07-16 2015-09-10 エーエスエムエル ネザーランズ ビー.ブイ. Lithographic apparatus
JP2015212839A (en) * 2003-07-16 2015-11-26 エーエスエムエル ネザーランズ ビー.ブイ. Lithographic apparatus
JP2018132771A (en) * 2003-07-16 2018-08-23 エーエスエムエル ネザーランズ ビー.ブイ. Lithographic apparatus
US9383655B2 (en) 2003-07-16 2016-07-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9804509B2 (en) 2003-07-24 2017-10-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9213247B2 (en) 2003-07-24 2015-12-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7184122B2 (en) 2003-07-24 2007-02-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9594308B2 (en) 2003-07-24 2017-03-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8711333B2 (en) 2003-07-24 2014-04-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006528835A (en) * 2003-07-24 2006-12-21 カール・ツアイス・エスエムテイ・アーゲー A method of introducing a microlithographic projection exposure apparatus and the immersion liquid to the immersion space
US10146143B2 (en) 2003-07-24 2018-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7557901B2 (en) 2003-07-24 2009-07-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7175968B2 (en) 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US8964163B2 (en) 2003-07-28 2015-02-24 Asml Netherlands B.V. Immersion lithographic apparatus and device manufacturing method with a projection system having a part movable relative to another part
US9760026B2 (en) 2003-07-28 2017-09-12 Nikon Corporation Exposure apparatus, method for producing device, and method for controlling exposure apparatus
US9639006B2 (en) 2003-07-28 2017-05-02 Asml Netherlands B.V. Lithographic projection apparatus and device manufacturing method
US10185232B2 (en) 2003-07-28 2019-01-22 Nikon Corporation Exposure apparatus, method for producing device, and method for controlling exposure apparatus
US10303066B2 (en) 2003-07-28 2019-05-28 Asml Netherlands B.V. Lithographic projection apparatus and device manufacturing method
US8937704B2 (en) 2003-07-31 2015-01-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a resistivity sensor
US9285686B2 (en) 2003-07-31 2016-03-15 Asml Netherlands B.V. Lithographic apparatus involving an immersion liquid supply system with an aperture
CN1624588B (en) 2003-08-11 2011-11-02 台湾积体电路制造股份有限公司 Immersion lithographic system and method of manufacturing semiconductor device
US10203608B2 (en) 2003-08-21 2019-02-12 Nikon Corporation Exposure apparatus and device manufacturing method having lower scanning speed to expose peripheral shot area
JP2012129556A (en) * 2003-08-21 2012-07-05 Nikon Corp Exposure method and device manufacturing method
US10209622B2 (en) 2003-08-21 2019-02-19 Nikon Corporation Exposure method and device manufacturing method having lower scanning speed to expose peripheral shot area
US8064037B2 (en) 2003-08-21 2011-11-22 Nikon Corporation Immersion exposure apparatus and device manufacturing method with no liquid recovery during exposure
US7697111B2 (en) 2003-08-26 2010-04-13 Nikon Corporation Optical element and exposure apparatus
US10175584B2 (en) 2003-08-26 2019-01-08 Nikon Corporation Optical element and exposure apparatus
JP4492538B2 (en) * 2003-08-29 2010-06-30 株式会社ニコン Exposure apparatus
US8208124B2 (en) 2003-08-29 2012-06-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7733459B2 (en) 2003-08-29 2010-06-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2010118680A (en) * 2003-08-29 2010-05-27 Nikon Corp Liquid recovery apparatus, exposure apparatus, exposure method, and device manufacturing method
US9581914B2 (en) 2003-08-29 2017-02-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2012114481A (en) * 2003-08-29 2012-06-14 Nikon Corp Liquid recovery apparatus, exposure apparatus, exposure method, and device manufacturing method
US7847916B2 (en) 2003-08-29 2010-12-07 Nikon Corporation Liquid recovery apparatus, exposure apparatus, exposure method, and device manufacturing method
JP2010103560A (en) * 2003-08-29 2010-05-06 Nikon Corp Liquid recovery apparatus, exposure apparatus, exposure method, and method of manufacturing device
US9568841B2 (en) 2003-08-29 2017-02-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9442388B2 (en) 2003-08-29 2016-09-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JPWO2005022615A1 (en) * 2003-08-29 2006-10-26 株式会社ニコン Liquid recovery apparatus, exposure apparatus, exposure method and device manufacturing method
JP2010093302A (en) * 2003-08-29 2010-04-22 Nikon Corp Liquid recovery apparatus, exposure apparatus, exposure method, and device manufacturing method
JP2010093301A (en) * 2003-08-29 2010-04-22 Nikon Corp Liquid recovery apparatus, exposure apparatus, exposure method, and device manufacturing method
US9316919B2 (en) 2003-08-29 2016-04-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9606448B2 (en) 2003-08-29 2017-03-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10012909B2 (en) 2003-08-29 2018-07-03 Nikon Corporation Liquid recovery apparatus, exposure apparatus, exposure method, and device manufacturing method
US10025204B2 (en) 2003-08-29 2018-07-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2017062481A (en) * 2003-08-29 2017-03-30 株式会社ニコン Liquid recovery device, exposure device, exposure method, and device manufacturing method
JP2016026333A (en) * 2003-08-29 2016-02-12 株式会社ニコン Liquid recovery device, exposure device, exposure method, and device manufacturing method
US9041901B2 (en) 2003-08-29 2015-05-26 Nikon Corporation Liquid recovery apparatus, exposure apparatus, exposure method, and device manufacturing method
US9025127B2 (en) 2003-08-29 2015-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI637425B (en) * 2003-08-29 2018-10-01 尼康股份有限公司
US8953144B2 (en) 2003-08-29 2015-02-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8947637B2 (en) 2003-08-29 2015-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10146142B2 (en) 2003-08-29 2018-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2015019112A (en) * 2003-08-29 2015-01-29 株式会社ニコン Liquid recovery apparatus, exposure apparatus, exposure method, and device manufacturing method
US6954256B2 (en) 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
KR101477850B1 (en) * 2003-08-29 2014-12-30 가부시키가이샤 니콘 Liquid recovery apparatus, exposure apparatus, exposure method, and device production method
US8208123B2 (en) 2003-08-29 2012-06-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1510870A1 (en) * 2003-08-29 2005-03-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7826031B2 (en) 2003-08-29 2010-11-02 Nikon Corporation Liquid recovery apparatus, exposure apparatus, exposure method, and device manufacturing method
US8867017B2 (en) 2003-08-29 2014-10-21 Nikon Corporation Liquid recovery apparatus, exposure apparatus, exposure method, and device manufacturing method
US8854599B2 (en) 2003-08-29 2014-10-07 Nikon Corporation Liquid recovery apparatus, exposure apparatus, exposure method, and device manufacturing method
US8804097B2 (en) 2003-08-29 2014-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005022615A1 (en) * 2003-08-29 2005-03-10 Nikon Corporation Liquid recovery apparatus, exposure apparatus, exposure method, and device production method
JP2014057102A (en) * 2003-08-29 2014-03-27 Nikon Corp Liquid recovery apparatus, exposure device, exposure method, and device manufacturing method
US10203610B2 (en) 2003-09-03 2019-02-12 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US9817319B2 (en) 2003-09-03 2017-11-14 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US8253921B2 (en) 2003-09-03 2012-08-28 Nikon Corporation Exposure apparatus and device fabricating method
US8724076B2 (en) 2003-09-26 2014-05-13 Nikon Corporation Projection exposure apparatus, cleaning and maintenance methods of a projection exposure apparatus, and device manufacturing method
US8035797B2 (en) 2003-09-26 2011-10-11 Nikon Corporation Projection exposure apparatus, cleaning and maintenance methods of a projection exposure apparatus, and device manufacturing method
US7158211B2 (en) 2003-09-29 2007-01-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8400615B2 (en) 2003-09-29 2013-03-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10025194B2 (en) 2003-09-29 2018-07-17 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7817245B2 (en) 2003-09-29 2010-10-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8797502B2 (en) 2003-09-29 2014-08-05 Nikon Corporation Exposure apparatus, exposure method, and method for producing device with electricity removal device by adding additive to liquid
EP1670040A1 (en) * 2003-09-29 2006-06-14 Nikon Corporation Projection exposure device, projection exposure method, and device manufacturing method
EP1670040A4 (en) * 2003-09-29 2008-05-28 Nikon Corp Projection exposure device, projection exposure method, and device manufacturing method
US7193681B2 (en) 2003-09-29 2007-03-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101311046B1 (en) * 2003-09-29 2013-09-24 가부시키가이샤 니콘 Projection exposure device, projection exposure method, and device manufacturing method
EP1522894A3 (en) * 2003-10-06 2006-06-21 Matsushita Electric Industrial Co., Ltd. Semiconductor fabrication apparatus and pattern formation method using the same
EP1522894A2 (en) * 2003-10-06 2005-04-13 Matsushita Electric Industrial Co., Ltd. Semiconductor fabrication apparatus and pattern formation method using the same
JP2011181937A (en) * 2003-10-09 2011-09-15 Nikon Corp Exposure apparatus, exposure method, and method for producing device
JP2005268747A (en) * 2003-10-09 2005-09-29 Nikon Corp Exposure system, method of exposure, and method of manufacturing device
JP2010087531A (en) * 2003-10-09 2010-04-15 Nikon Corp Exposure apparatus, exposure method, and method for producing device
JP4524601B2 (en) * 2003-10-09 2010-08-18 株式会社ニコン Exposure apparatus and an exposure method, a device manufacturing method
WO2005036624A1 (en) * 2003-10-09 2005-04-21 Nikon Corporation Exposure apparatus, exposure method, and device producing method
US10209623B2 (en) 2003-10-09 2019-02-19 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
KR101523456B1 (en) * 2003-10-09 2015-05-27 가부시키가이샤 니콘 Exposure apparatus, exposure method, and device producing method
KR101476903B1 (en) * 2003-10-09 2014-12-26 가부시키가이샤 니콘 Exposure apparatus, exposure method, and device producing method
JP2008235930A (en) * 2003-10-15 2008-10-02 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7433015B2 (en) 2003-10-15 2008-10-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1524557A1 (en) * 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7961293B2 (en) 2003-10-15 2011-06-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1524558A1 (en) * 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US8570486B2 (en) 2003-10-15 2013-10-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8174674B2 (en) 2003-10-15 2012-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4482594B2 (en) * 2003-10-15 2010-06-16 エーエスエムエル ネザーランズ ビー.ブイ. Lithographic apparatus and device manufacturing method
US9285685B2 (en) 2003-10-15 2016-03-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7352435B2 (en) 2003-10-15 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2008199061A (en) * 2003-10-15 2008-08-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP4482593B2 (en) * 2003-10-15 2010-06-16 エーエスエムエル ネザーランズ ビー.ブイ. Lithographic apparatus and device manufacturing method
JP2009071316A (en) * 2003-10-15 2009-04-02 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US8711330B2 (en) 2003-10-15 2014-04-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9423698B2 (en) 2003-10-28 2016-08-23 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
US8860922B2 (en) 2003-10-28 2014-10-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8860923B2 (en) 2003-10-28 2014-10-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1528432A1 (en) * 2003-10-28 2005-05-04 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US9182679B2 (en) 2003-10-28 2015-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9760014B2 (en) 2003-10-28 2017-09-12 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
US8797506B2 (en) 2003-10-28 2014-08-05 Nikon Corporation Exposure apparatus, exposure method, and device fabrication method
US9482962B2 (en) 2003-10-28 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10248034B2 (en) 2003-10-28 2019-04-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8272544B2 (en) 2003-10-28 2012-09-25 Nikon Corporation Exposure apparatus, exposure method, and device fabrication method
US7932996B2 (en) 2003-10-28 2011-04-26 Nikon Corporation Exposure apparatus, exposure method, and device fabrication method
US8928856B2 (en) 2003-10-31 2015-01-06 Nikon Corporation Exposure apparatus and device fabrication method
US9563133B2 (en) 2003-10-31 2017-02-07 Nikon Corporation Exposure apparatus and device fabrication method
US7113259B2 (en) 2003-10-31 2006-09-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9829801B2 (en) 2003-10-31 2017-11-28 Nikon Corporation Exposure apparatus and device fabrication method
US10048597B2 (en) 2003-10-31 2018-08-14 Nikon Corporation Exposure apparatus and device fabrication method
EP1530086A1 (en) * 2003-11-05 2005-05-11 DSM IP Assets B.V. A method and an apparatus for producing micro-chips
WO2005050324A3 (en) * 2003-11-05 2005-09-22 Leonardus Gerardus Bern Bremer A method and apparatus for producing microchips
US9134623B2 (en) 2003-11-14 2015-09-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9952515B2 (en) 2003-11-14 2018-04-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9134622B2 (en) 2003-11-14 2015-09-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10281632B2 (en) 2003-11-20 2019-05-07 Nikon Corporation Illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power to rotate linear polarization direction
US9885872B2 (en) 2003-11-20 2018-02-06 Nikon Corporation Illumination optical apparatus, exposure apparatus, and exposure method with optical integrator and polarization member that changes polarization state of light
US8472006B2 (en) 2003-11-24 2013-06-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101437254B1 (en) * 2003-12-03 2014-09-02 가부시키가이샤 니콘 Exposure apparatus, exposure method, device producing method, and optical component
US10088760B2 (en) 2003-12-03 2018-10-02 Nikon Corporation Exposure apparatus, exposure method, method for producing device, and optical part
US7379162B2 (en) 2003-12-08 2008-05-27 Canon Kabushiki Kaisha Substrate-holding technique
US7602476B2 (en) 2003-12-08 2009-10-13 Canon Kabushiki Kaisha Substrate-holding technique
US9798245B2 (en) 2003-12-15 2017-10-24 Nikon Corporation Exposure apparatus, and exposure method, with recovery device to recover liquid leaked from between substrate and member
JP2012142609A (en) * 2003-12-15 2012-07-26 Nikon Corp Stage device, exposure equipment, and device manufacturing method
WO2005062351A1 (en) * 2003-12-19 2005-07-07 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method
EP1697974A4 (en) * 2003-12-19 2009-07-29 Canon Kk Exposure apparatus and device manufacturing method
US7292309B2 (en) 2003-12-19 2007-11-06 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method
EP1697974A1 (en) * 2003-12-19 2006-09-06 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method
JP2008219020A (en) * 2003-12-23 2008-09-18 Asml Netherlands Bv Lithographic apparatus
US9817321B2 (en) 2003-12-23 2017-11-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7589818B2 (en) 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
JP4526572B2 (en) * 2003-12-23 2010-08-18 エーエスエムエル ネザーランズ ビー.ブイ. Lithographic apparatus
US9684250B2 (en) 2003-12-23 2017-06-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9465301B2 (en) 2003-12-23 2016-10-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2008219017A (en) * 2003-12-23 2008-09-18 Asml Netherlands Bv Lithographic apparatus, alignment apparatus, device manufacturing method, aligning method, and method of converting apparatus
US8064044B2 (en) 2004-01-05 2011-11-22 Nikon Corporation Exposure apparatus, exposure method, and device producing method
US9910369B2 (en) 2004-01-05 2018-03-06 Nikon Corporation Exposure apparatus, exposure method, and device producing method
US9588436B2 (en) 2004-01-05 2017-03-07 Nikon Corporation Exposure apparatus, exposure method, and device producing method
US9436095B2 (en) 2004-01-20 2016-09-06 Carl Zeiss Smt Gmbh Exposure apparatus and measuring device for a projection lens
US7879531B2 (en) 2004-01-23 2011-02-01 Air Products And Chemicals, Inc. Immersion lithography fluids
JP2005252239A (en) * 2004-01-23 2005-09-15 Air Products & Chemicals Inc Immersion lithographic fluid
US8007986B2 (en) 2004-01-23 2011-08-30 Air Products And Chemicals, Inc. Immersion lithography fluids
EP1557721A3 (en) * 2004-01-23 2007-06-06 Air Products And Chemicals, Inc. Immersion lithography fluids
EP2762976A1 (en) * 2004-01-23 2014-08-06 Air Products And Chemicals, Inc. Use of immersion liquids
KR100967372B1 (en) * 2004-01-23 2010-07-05 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 Immersion lithography fluids
US7697110B2 (en) 2004-01-26 2010-04-13 Nikon Corporation Exposure apparatus and device manufacturing method
US8330934B2 (en) 2004-01-26 2012-12-11 Nikon Corporation Exposure apparatus and device manufacturing method
US9684248B2 (en) 2004-02-02 2017-06-20 Nikon Corporation Lithographic apparatus having substrate table and sensor table to measure a patterned beam
US9665016B2 (en) 2004-02-02 2017-05-30 Nikon Corporation Lithographic apparatus and method having substrate table and sensor table to hold immersion liquid
US10139737B2 (en) 2004-02-02 2018-11-27 Nikon Corporation Lithographic apparatus and method having substrate and sensor tables
US10007196B2 (en) 2004-02-02 2018-06-26 Nikon Corporation Lithographic apparatus and method having substrate and sensor tables
US9632431B2 (en) 2004-02-02 2017-04-25 Nikon Corporation Lithographic apparatus and method having substrate and sensor tables
US10151983B2 (en) 2004-02-03 2018-12-11 Nikon Corporation Exposure apparatus and device manufacturing method
JP2007520893A (en) * 2004-02-03 2007-07-26 ロチェスター インスティテュート オブ テクノロジー Photolithography and system using a fluid
US8605252B2 (en) 2004-02-04 2013-12-10 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US10048602B2 (en) 2004-02-04 2018-08-14 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
EP2765595A1 (en) * 2004-02-04 2014-08-13 Nikon Corporation Exposure apparatus, exposure method, and method for producing a device
JP2005252247A (en) * 2004-02-04 2005-09-15 Nikon Corp Exposure device, exposure method, and method of fabricating the device
US8208119B2 (en) 2004-02-04 2012-06-26 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US10241417B2 (en) 2004-02-06 2019-03-26 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US10007194B2 (en) 2004-02-06 2018-06-26 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US10234770B2 (en) 2004-02-06 2019-03-19 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US20130271945A1 (en) 2004-02-06 2013-10-17 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
JP2010153922A (en) * 2004-02-09 2010-07-08 Yoshihiko Okamoto Method of manufacturing semiconductor device
EP1562080B1 (en) * 2004-02-09 2007-08-29 Philips Electronics N.V. Lithographic apparatus and device manufacturing method
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8115902B2 (en) 2004-02-10 2012-02-14 Nikon Corporation Exposure apparatus, device manufacturing method, maintenance method, and exposure method
US7557900B2 (en) 2004-02-10 2009-07-07 Nikon Corporation Exposure apparatus, device manufacturing method, maintenance method, and exposure method
JP2011097114A (en) * 2004-02-19 2011-05-12 Nikon Corp Exposure apparatus, and device manufacturing method
JPWO2005081290A1 (en) * 2004-02-19 2007-10-25 株式会社ニコン Exposure apparatus and device manufacturing method
JP2010161406A (en) * 2004-02-19 2010-07-22 Nikon Corp Exposure apparatus, and method of producing device
US8023100B2 (en) 2004-02-20 2011-09-20 Nikon Corporation Exposure apparatus, supply method and recovery method, exposure method, and device producing method
WO2005081295A1 (en) * 2004-02-20 2005-09-01 Nikon Corporation Exposure method, exposure apparatus, exposure system and method for manufacturing device
JP4974049B2 (en) * 2004-02-20 2012-07-11 株式会社ニコン Exposure method, an exposure apparatus, and device manufacturing method
TWI471900B (en) * 2004-02-20 2015-02-01 尼康股份有限公司
JP2005259870A (en) * 2004-03-10 2005-09-22 Nikon Corp Substrate retainer, stage device, exposing device and exposing method
US10126661B2 (en) 2004-03-25 2018-11-13 Nikon Corporation Exposure apparatus and device fabrication method
US7227619B2 (en) 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7034917B2 (en) 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7375796B2 (en) 2004-04-01 2008-05-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7295283B2 (en) 2004-04-02 2007-11-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10234768B2 (en) 2004-04-14 2019-03-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9829799B2 (en) 2004-04-14 2017-11-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9989861B2 (en) 2004-04-14 2018-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9568840B2 (en) 2004-04-14 2017-02-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9207543B2 (en) 2004-04-14 2015-12-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a groove to collect liquid
US8488099B2 (en) 2004-04-19 2013-07-16 Nikon Corporation Exposure apparatus and device manufacturing method
US9599907B2 (en) 2004-04-19 2017-03-21 Nikon Corporation Exposure apparatus and device manufacturing method
US7379159B2 (en) 2004-05-03 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7652751B2 (en) 2004-05-03 2010-01-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9623436B2 (en) 2004-05-18 2017-04-18 Asml Netherlands B.V. Active drying station and method to remove immersion liquid using gas flow supply with gas outlet between two gas inlets
US7486381B2 (en) 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9429495B2 (en) 2004-06-04 2016-08-30 Carl Zeiss Smt Gmbh System for measuring the image quality of an optical imaging system
US8325326B2 (en) 2004-06-07 2012-12-04 Nikon Corporation Stage unit, exposure apparatus, and exposure method
US8705008B2 (en) 2004-06-09 2014-04-22 Nikon Corporation Substrate holding unit, exposure apparatus having same, exposure method, method for producing device, and liquid repellant plate
US7771918B2 (en) 2004-06-09 2010-08-10 Panasonic Corporation Semiconductor manufacturing apparatus and pattern formation method
US9645505B2 (en) 2004-06-09 2017-05-09 Nikon Corporation Immersion exposure apparatus and device manufacturing method with measuring device to measure specific resistance of liquid
US9411247B2 (en) 2004-06-10 2016-08-09 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US9529273B2 (en) 2004-06-10 2016-12-27 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US10203614B2 (en) 2004-06-10 2019-02-12 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8508713B2 (en) 2004-06-10 2013-08-13 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US9778580B2 (en) 2004-06-10 2017-10-03 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8717533B2 (en) 2004-06-10 2014-05-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8482716B2 (en) 2004-06-10 2013-07-09 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8373843B2 (en) 2004-06-10 2013-02-12 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8704999B2 (en) 2004-06-10 2014-04-22 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8164734B2 (en) 2004-06-16 2012-04-24 Asml Netherlands B.V. Vacuum system for immersion photolithography
US9507270B2 (en) 2004-06-16 2016-11-29 Asml Netherlands B.V. Vacuum system for immersion photolithography
US9857699B2 (en) 2004-06-16 2018-01-02 Asml Netherlands B.V. Vacuum system for immersion photolithography
US10168624B2 (en) 2004-06-16 2019-01-01 Asml Netherlands B.V. Vacuum system for immersion photolithography
US8368870B2 (en) 2004-06-21 2013-02-05 Nikon Corporation Exposure apparatus and device manufacturing method
US8810767B2 (en) 2004-06-21 2014-08-19 Nikon Corporation Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device
US8698998B2 (en) 2004-06-21 2014-04-15 Nikon Corporation Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device
US9470984B2 (en) 2004-06-21 2016-10-18 Nikon Corporation Exposure apparatus
US9904182B2 (en) 2004-06-21 2018-02-27 Nikon Corporation Exposure apparatus
KR101213283B1 (en) 2004-07-01 2012-12-17 에드워즈 리미티드 Performing immersion photolithography system and immersion photolithography method
JP2008504708A (en) * 2004-07-01 2008-02-14 ザ ビーオーシー グループ ピーエルシー Immersion photolithography system
US7459264B2 (en) 2004-07-07 2008-12-02 Kabushiki Kaisha Toshiba Device manufacturing method
US7796237B2 (en) 2004-07-07 2010-09-14 Kabushiki Kaisha Toshiba Lithography apparatus, method of forming pattern and method of manufacturing semiconductor device
US9104117B2 (en) 2004-07-07 2015-08-11 Bob Streefkerk Lithographic apparatus having a liquid detection system
US7477353B2 (en) 2004-07-07 2009-01-13 Kabushiki Kaisha Toshiba Lithography apparatus, method of forming pattern and method of manufacturing semiconductor device
JP2012009897A (en) * 2004-07-12 2012-01-12 Nikon Corp Exposure device and device manufacturing method
US8654308B2 (en) 2004-07-12 2014-02-18 Nikon Corporation Method for determining exposure condition, exposure method, exposure apparatus, and method for manufacturing device
JP2011044735A (en) * 2004-07-12 2011-03-03 Nikon Corp Exposure equipment and device manufacturing method
US9250537B2 (en) 2004-07-12 2016-02-02 Nikon Corporation Immersion exposure apparatus and method with detection of liquid on members of the apparatus
US7161663B2 (en) 2004-07-22 2007-01-09 Asml Netherlands B.V. Lithographic apparatus
US8054444B2 (en) * 2004-08-03 2011-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Lens cleaning module for immersion lithography apparatus
US8169591B2 (en) 2004-08-03 2012-05-01 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US10254663B2 (en) 2004-08-13 2019-04-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a heater
US7804575B2 (en) 2004-08-13 2010-09-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method having liquid evaporation control
US9188880B2 (en) 2004-08-13 2015-11-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a heater
US9268242B2 (en) 2004-08-13 2016-02-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a heater and a temperature sensor
US7304715B2 (en) 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006019124A1 (en) * 2004-08-18 2006-02-23 Nikon Corporation Exposure apparatus and device manufacturing method
US9507278B2 (en) 2004-08-19 2016-11-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9904185B2 (en) 2004-08-19 2018-02-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9746788B2 (en) 2004-08-19 2017-08-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9488923B2 (en) 2004-08-19 2016-11-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9097992B2 (en) 2004-08-19 2015-08-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8675174B2 (en) 2004-09-17 2014-03-18 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8102512B2 (en) 2004-09-17 2012-01-24 Nikon Corporation Substrate holding device, exposure apparatus, and device manufacturing method
US9341959B2 (en) 2004-09-17 2016-05-17 Nikon Corporation Substrate holding device, exposure apparatus, and device manufacturing method
US9958785B2 (en) 2004-09-17 2018-05-01 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7133114B2 (en) 2004-09-20 2006-11-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8427629B2 (en) 2004-09-24 2013-04-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7808614B2 (en) 2004-09-24 2010-10-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7522261B2 (en) 2004-09-24 2009-04-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7355674B2 (en) 2004-09-28 2008-04-08 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and computer program product
US8068210B2 (en) 2004-09-28 2011-11-29 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and computer program product
US8755027B2 (en) 2004-10-05 2014-06-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving fluid mixing and control of the physical property of a fluid
JP4488998B2 (en) * 2004-10-05 2010-06-23 エーエスエムエル ネザーランズ ビー.ブイ. Lithographic apparatus and device manufacturing method
US8027026B2 (en) 2004-10-05 2011-09-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2009302559A (en) * 2004-10-05 2009-12-24 Asml Holding Nv Lithographic apparatus, and device manufacturing method
US7894040B2 (en) 2004-10-05 2011-02-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006140449A (en) * 2004-10-05 2006-06-01 Asml Holdings Nv Lithographic apparatus and device manufacturing method
US7209213B2 (en) 2004-10-07 2007-04-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006041083A1 (en) * 2004-10-13 2006-04-20 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
JP2006140459A (en) * 2004-10-13 2006-06-01 Nikon Corp Aligner, exposing method, and device manufacturing method
US7852456B2 (en) 2004-10-13 2010-12-14 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
WO2006041086A1 (en) * 2004-10-13 2006-04-20 Nikon Corporation Exposure device, exposure method, and device manufacturing method
EP1806773A4 (en) * 2004-10-13 2008-12-31 Nikon Corp Exposure device, exposure method, and device manufacturing method
EP1806773A1 (en) * 2004-10-13 2007-07-11 Nikon Corporation Exposure device, exposure method, and device manufacturing method
JP2006190971A (en) * 2004-10-13 2006-07-20 Nikon Corp Exposure apparatus, exposure method, and device manufacturing method
US8456609B2 (en) 2004-10-15 2013-06-04 Nikon Corporation Exposure apparatus and device manufacturing method
US7456929B2 (en) 2004-10-15 2008-11-25 Nikon Corporation Exposure apparatus and device manufacturing method
US7379155B2 (en) 2004-10-18 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8004652B2 (en) 2004-10-18 2011-08-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8934082B2 (en) 2004-10-18 2015-01-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7119876B2 (en) 2004-10-18 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9436097B2 (en) 2004-10-18 2016-09-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9753380B2 (en) 2004-10-18 2017-09-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10248033B2 (en) 2004-10-18 2019-04-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8941808B2 (en) 2004-10-26 2015-01-27 Nikon Corporation Immersion lithographic apparatus rinsing outer contour of substrate with immersion space
US8040489B2 (en) 2004-10-26 2011-10-18 Nikon Corporation Substrate processing method, exposure apparatus, and method for producing device by immersing substrate in second liquid before immersion exposure through first liquid
US8922754B2 (en) 2004-11-01 2014-12-30 Nikon Corporation Immersion exposure apparatus and device fabricating method with two substrate stages and metrology station
US9709900B2 (en) 2004-11-01 2017-07-18 Nikon Corporation Exposure apparatus and device fabricating method
US8330939B2 (en) 2004-11-01 2012-12-11 Nikon Corporation Immersion exposure apparatus and device manufacturing method with a liquid recovery port provided on at least one of a first stage and second stage
US8294873B2 (en) 2004-11-11 2012-10-23 Nikon Corporation Exposure method, device manufacturing method, and substrate
US7251013B2 (en) 2004-11-12 2007-07-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9798247B2 (en) 2004-11-12 2017-10-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a liquid confinement structure
US7414699B2 (en) 2004-11-12 2008-08-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9645507B2 (en) 2004-11-12 2017-05-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7710537B2 (en) 2004-11-12 2010-05-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9964861B2 (en) 2004-11-12 2018-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a liquid confinement structure
US10274832B2 (en) 2004-11-12 2019-04-30 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a liquid confinement structure
US7852457B2 (en) 2004-11-12 2010-12-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7583357B2 (en) 2004-11-12 2009-09-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7423720B2 (en) 2004-11-12 2008-09-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9261797B2 (en) 2004-11-12 2016-02-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a liquid confinement structure
US8817231B2 (en) 2004-11-12 2014-08-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a liquid confinement structure
US7978306B2 (en) 2004-11-17 2011-07-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411657B2 (en) 2004-11-17 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9188882B2 (en) 2004-11-17 2015-11-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9581916B2 (en) 2004-11-17 2017-02-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9857692B2 (en) 2004-11-18 2018-01-02 Nikon Corporation Position measurement method, position control method, measurement method, loading method, exposure method and exposure apparatus, and device manufacturing method
US10222708B2 (en) 2004-11-18 2019-03-05 Nikon Corporation Position measurement method, position control method, measurement method, loading method, exposure method and exposure apparatus, and device manufacturing method
US9348238B2 (en) 2004-11-18 2016-05-24 Niko Corporation Position measurement method, position control method, measurement method, loading method, exposure method and exposure apparatus, and device manufacturing method
US8319944B2 (en) 2004-11-18 2012-11-27 Carl Zeiss Smt Gmbh Projection lens system of a microlithographic projection exposure installation
JP2008521224A (en) * 2004-11-18 2008-06-19 カール・ツアイス・エスエムテイ・アーゲー Projection objective of a microlithographic projection exposure apparatus
US9223231B2 (en) 2004-11-18 2015-12-29 Nikon Corporation Position measurement method, position control method, measurement method, loading method, exposure method and exposure apparatus, and device manufacturing method
US8054465B2 (en) 2004-11-18 2011-11-08 Nikon Corporation Position measurement method
US8072578B2 (en) 2004-11-18 2011-12-06 Nikon Corporation Position measurement method, position control method, measurement method, loading method, exposure method and exposure apparatus, and device manufacturing method
US9223230B2 (en) 2004-11-18 2015-12-29 Nikon Corporation Position measurement method, position control method, measurement method, loading method, exposure method and exposure apparatus, and device manufacturing method
US8576379B2 (en) 2004-11-18 2013-11-05 Nikon Corporation Position measurement method, position control method, measurement method, loading method, exposure method and exposure apparatus, and device manufacturing method
US8059260B2 (en) * 2004-11-18 2011-11-15 Nikon Corporation Position measurement method, position control method, measurement method, loading method, exposure method and exposure apparatus, and device manufacturing method
US9164396B2 (en) 2004-11-18 2015-10-20 Carl Zeiss Smt Gmbh Projection lens system of a microlithographic projection exposure installation
US9298108B2 (en) 2004-11-18 2016-03-29 Nikon Corporation Position measurement method, position control method, measurement method, loading method, exposure method and exposure apparatus, and device manufacturing method
US7145630B2 (en) 2004-11-23 2006-12-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7812924B2 (en) 2004-12-02 2010-10-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7161654B2 (en) 2004-12-02 2007-01-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7446850B2 (en) 2004-12-03 2008-11-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7764356B2 (en) 2004-12-03 2010-07-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8456608B2 (en) 2004-12-06 2013-06-04 Nikon Corporation Maintenance method, maintenance device, exposure apparatus, and device manufacturing method
US7804576B2 (en) 2004-12-06 2010-09-28 Nikon Corporation Maintenance method, maintenance device, exposure apparatus, and device manufacturing method
US8891055B2 (en) 2004-12-06 2014-11-18 Nikon Corporation Maintenance method, maintenance device, exposure apparatus, and device manufacturing method
US7643127B2 (en) 2004-12-07 2010-01-05 Asml Netherlands B.V. Prewetting of substrate before immersion exposure
US7248334B2 (en) 2004-12-07 2007-07-24 Asml Netherlands B.V. Sensor shield
US7196770B2 (en) 2004-12-07 2007-03-27 Asml Netherlands B.V. Prewetting of substrate before immersion exposure
US7365827B2 (en) 2004-12-08 2008-04-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8860926B2 (en) 2004-12-08 2014-10-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8115905B2 (en) 2004-12-08 2012-02-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8035799B2 (en) 2004-12-09 2011-10-11 Nikon Corporation Exposure apparatus, exposure method, and device producing method
US8913224B2 (en) 2004-12-09 2014-12-16 Nixon Corporation Exposure apparatus, exposure method, and device producing method
US9182222B2 (en) 2004-12-10 2015-11-10 Asml Netherlands B.V. Substrate placement in immersion lithography
US7352440B2 (en) 2004-12-10 2008-04-01 Asml Netherlands B.V. Substrate placement in immersion lithography
US9740106B2 (en) 2004-12-10 2017-08-22 Asml Netherlands B.V. Substrate placement in immersion lithography
US8233135B2 (en) 2004-12-15 2012-07-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7403261B2 (en) 2004-12-15 2008-07-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7751032B2 (en) 2004-12-15 2010-07-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9690206B2 (en) 2004-12-15 2017-06-27 Nikon Corporation Substrate holding apparatus, exposure apparatus, and device fabricating method
US9224632B2 (en) 2004-12-15 2015-12-29 Nikon Corporation Substrate holding apparatus, exposure apparatus, and device fabricating method
US9964860B2 (en) 2004-12-15 2018-05-08 Nikon Corporation Substrate holding apparatus, exposure apparatus, and device fabricating method
US7528931B2 (en) 2004-12-20 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9116443B2 (en) 2004-12-20 2015-08-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9835960B2 (en) 2004-12-20 2017-12-05 Asml Netherlands B.V. Lithographic apparatus
US9417535B2 (en) 2004-12-20 2016-08-16 Asml Netherlands B.V. Lithographic apparatus
US9703210B2 (en) 2004-12-20 2017-07-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9329494B2 (en) 2004-12-20 2016-05-03 Asml Netherlands B.V. Lithographic apparatus
US8462312B2 (en) 2004-12-20 2013-06-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8941811B2 (en) 2004-12-20 2015-01-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10248035B2 (en) 2004-12-20 2019-04-02 Asml Netherlands B.V. Lithographic apparatus
US8233137B2 (en) 2004-12-20 2012-07-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7491661B2 (en) 2004-12-28 2009-02-17 Asml Netherlands B.V. Device manufacturing method, top coat material and substrate
US8013978B2 (en) 2004-12-28 2011-09-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7763355B2 (en) 2004-12-28 2010-07-27 Asml Netherlands B.V. Device manufacturing method, top coat material and substrate
US7405805B2 (en) 2004-12-28 2008-07-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8913225B2 (en) 2004-12-28 2014-12-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8102507B2 (en) 2004-12-30 2012-01-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8354209B2 (en) 2004-12-30 2013-01-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7670730B2 (en) 2004-12-30 2010-03-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8830446B2 (en) 2005-01-12 2014-09-09 Asml Netherlands B.V. Exposure apparatus
US8542341B2 (en) 2005-01-12 2013-09-24 Asml Netherlands B.V. Exposure apparatus
US7450217B2 (en) 2005-01-12 2008-11-11 Asml Netherlands B.V. Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby
WO2006074579A1 (en) * 2005-01-14 2006-07-20 Xiao Zhu Oil immersion exposure method in chip photolithographic process
US7705962B2 (en) 2005-01-14 2010-04-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9746781B2 (en) 2005-01-31 2017-08-29 Nikon Corporation Exposure apparatus and method for producing device
US8859188B2 (en) 2005-02-10 2014-10-14 Asml Netherlands B.V. Immersion liquid, exposure apparatus, and exposure process
JP2008530789A (en) * 2005-02-10 2008-08-07 エーエスエムエル ネザーランズ ビー.ブイ. Immersion liquid, the exposure apparatus and an exposure method
JP2011142348A (en) * 2005-02-10 2011-07-21 Asml Netherlands Bv Liquid immersion lithography system and device manufacturing method
JP2012069981A (en) * 2005-02-10 2012-04-05 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR101105784B1 (en) * 2005-02-10 2012-01-17 에이에스엠엘 네델란즈 비.브이. Immersion liquid, exposure apparatus, and exposure process
US9454088B2 (en) 2005-02-10 2016-09-27 Asml Netherlands B.V. Immersion liquid, exposure apparatus, and exposure process
US9164391B2 (en) 2005-02-10 2015-10-20 Asml Netherlands B.V. Immersion liquid, exposure apparatus, and exposure process
US9772565B2 (en) 2005-02-10 2017-09-26 Asml Netherlands B.V. Immersion liquid, exposure apparatus, and exposure process
US8902404B2 (en) 2005-02-22 2014-12-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8246838B2 (en) 2005-02-22 2012-08-21 Asml Netherlands B.V. Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method
US7914687B2 (en) 2005-02-22 2011-03-29 Asml Netherlands B.V. Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method
US8018573B2 (en) 2005-02-22 2011-09-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7224431B2 (en) 2005-02-22 2007-05-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7378025B2 (en) 2005-02-22 2008-05-27 Asml Netherlands B.V. Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method
US7428038B2 (en) 2005-02-28 2008-09-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid
US8107053B2 (en) 2005-02-28 2012-01-31 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid
US8958051B2 (en) 2005-02-28 2015-02-17 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid
US7843551B2 (en) 2005-03-04 2010-11-30 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9477159B2 (en) 2005-03-04 2016-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8514369B2 (en) 2005-03-04 2013-08-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8390778B2 (en) 2005-03-09 2013-03-05 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, seal structure, method of removing an object and a method of sealing
US7684010B2 (en) 2005-03-09 2010-03-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, seal structure, method of removing an object and a method of sealing
US7705968B2 (en) 2005-03-18 2010-04-27 Nikon Corporation Plate member, substrate holding device, exposure apparatus and method, and device manufacturing method
US8638422B2 (en) 2005-03-18 2014-01-28 Nikon Corporation Exposure method, exposure apparatus, method for producing device, and method for evaluating exposure apparatus
US7330238B2 (en) 2005-03-28 2008-02-12 Asml Netherlands, B.V. Lithographic apparatus, immersion projection apparatus and device manufacturing method
US7859644B2 (en) 2005-03-28 2010-12-28 Asml Netherlands B.V. Lithographic apparatus, immersion projection apparatus and device manufacturing method
US9239524B2 (en) 2005-03-30 2016-01-19 Nikon Corporation Exposure condition determination method, exposure method, exposure apparatus, and device manufacturing method involving detection of the situation of a liquid immersion region
US10209629B2 (en) 2005-04-05 2019-02-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9857695B2 (en) 2005-04-05 2018-01-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9429853B2 (en) 2005-04-05 2016-08-30 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8988651B2 (en) 2005-04-05 2015-03-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411654B2 (en) 2005-04-05 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8976334B2 (en) 2005-04-05 2015-03-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8259287B2 (en) 2005-04-05 2012-09-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7291850B2 (en) 2005-04-08 2007-11-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
USRE46933E1 (en) 2005-04-08 2018-07-03 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US7582881B2 (en) 2005-04-08 2009-09-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8089608B2 (en) 2005-04-18 2012-01-03 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US7256864B2 (en) 2005-04-19 2007-08-14 Asml Holding N.V. Liquid immersion lithography system having a tilted showerhead relative to a substrate
JP4848003B2 (en) * 2005-04-19 2011-12-28 エーエスエムエル ネザーランズ ビー.ブイ. Immersion lithography system and the liquid immersion lithography process comprising an angled shower head
WO2006112699A1 (en) * 2005-04-19 2006-10-26 Asml Netherlands B.V. Liquid immersion lithography system comprising a tilted showerhead
JP2008537356A (en) * 2005-04-19 2008-09-11 エーエスエムエル ネザーランズ ビー.ブイ. Immersion lithography system comprising an angled shower head
US9618854B2 (en) 2005-04-25 2017-04-11 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
US8064039B2 (en) 2005-04-25 2011-11-22 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
US9335639B2 (en) 2005-04-25 2016-05-10 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
US8236467B2 (en) 2005-04-28 2012-08-07 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
US8941812B2 (en) 2005-04-28 2015-01-27 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
US8860924B2 (en) 2005-05-03 2014-10-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7317507B2 (en) 2005-05-03 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9229335B2 (en) 2005-05-03 2016-01-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9477153B2 (en) 2005-05-03 2016-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7433016B2 (en) 2005-05-03 2008-10-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9606449B2 (en) 2005-05-03 2017-03-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9081300B2 (en) 2005-05-03 2015-07-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9146478B2 (en) 2005-05-03 2015-09-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10025196B2 (en) 2005-05-03 2018-07-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8248577B2 (en) 2005-05-03 2012-08-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7616290B2 (en) 2005-05-11 2009-11-10 Canon Kabushiki Kaisha Exposure apparatus and method
US9891539B2 (en) 2005-05-12 2018-02-13 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
WO2006122578A1 (en) * 2005-05-17 2006-11-23 Freescale Semiconductor, Inc. Contaminant removal apparatus and method therefor
WO2006126522A1 (en) * 2005-05-24 2006-11-30 Nikon Corporation Exposure method, exposure apparatus and device manufacturing method
US8253924B2 (en) 2005-05-24 2012-08-28 Nikon Corporation Exposure method, exposure apparatus and device manufacturing method
JPWO2006126522A1 (en) * 2005-05-24 2008-12-25 株式会社ニコン Exposure method and an exposure apparatus, and device manufacturing method
US8879159B2 (en) 2005-06-14 2014-11-04 Carl Zeiss Smt Gmbh Lithography projection objective, and a method for correcting image defects of the same
US9316922B2 (en) 2005-06-14 2016-04-19 Carl Zeiss Smt Gmbh Lithography projection objective, and a method for correcting image defects of the same
US9964859B2 (en) 2005-06-14 2018-05-08 Carl Zeiss Smt Gmbh Lithography projection objective, and a method for correcting image defects of the same
US7652746B2 (en) 2005-06-21 2010-01-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7751027B2 (en) 2005-06-21 2010-07-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9268236B2 (en) 2005-06-21 2016-02-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method having heat pipe with fluid to cool substrate and/or substrate holder
US7924416B2 (en) 2005-06-22 2011-04-12 Nikon Corporation Measurement apparatus, exposure apparatus, and device manufacturing method
US9099501B2 (en) 2005-06-28 2015-08-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9952514B2 (en) 2005-06-28 2018-04-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7468779B2 (en) 2005-06-28 2008-12-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9448494B2 (en) 2005-06-28 2016-09-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7834974B2 (en) 2005-06-28 2010-11-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8120749B2 (en) 2005-06-28 2012-02-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8687168B2 (en) 2005-06-28 2014-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9766556B2 (en) 2005-06-28 2017-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7929112B2 (en) 2005-06-28 2011-04-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8848165B2 (en) 2005-06-28 2014-09-30 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7474379B2 (en) 2005-06-28 2009-01-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7522258B2 (en) 2005-06-29 2009-04-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method utilizing movement of clean air to reduce contamination
JP2007013180A (en) * 2005-06-29 2007-01-18 Qimonda Ag Fluid for immersion lithography system
JP4504334B2 (en) * 2005-06-29 2010-07-14 キモンダ アクチエンゲゼルシャフト Liquid for immersion lithography system
US8179517B2 (en) 2005-06-30 2012-05-15 Nikon Corporation Exposure apparatus and method, maintenance method for exposure apparatus, and device manufacturing method
US7535644B2 (en) 2005-08-12 2009-05-19 Asml Netherlands B.V. Lens element, lithographic apparatus, device manufacturing method, and device manufactured thereby
US8054445B2 (en) 2005-08-16 2011-11-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8668191B2 (en) 2005-08-26 2014-03-11 Nikon Corporation Holding unit, assembly system, sputtering unit, and processing method and processing unit
US8070145B2 (en) 2005-08-26 2011-12-06 Nikon Corporation Holding unit, assembly system, sputtering unit, and processing method and processing unit
US8724075B2 (en) 2005-08-31 2014-05-13 Nikon Corporation Optical element, exposure apparatus based on the use of the same, exposure method, and method for producing microdevice
US7812926B2 (en) 2005-08-31 2010-10-12 Nikon Corporation Optical element, exposure apparatus based on the use of the same, exposure method, and method for producing microdevice
JP2007073587A (en) * 2005-09-05 2007-03-22 Nikon Corp Exposure method, aligner, and method of manufacturing device
US8780326B2 (en) 2005-09-09 2014-07-15 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8111374B2 (en) 2005-09-09 2012-02-07 Nikon Corporation Analysis method, exposure method, and device manufacturing method
US8004654B2 (en) 2005-10-06 2011-08-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411658B2 (en) 2005-10-06 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8958054B2 (en) 2005-10-06 2015-02-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007103841A (en) * 2005-10-07 2007-04-19 Toshiba Corp Manufacture of semiconductor device
US7656501B2 (en) 2005-11-16 2010-02-02 Asml Netherlands B.V. Lithographic apparatus
US7864292B2 (en) 2005-11-16 2011-01-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8786823B2 (en) 2005-11-16 2014-07-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9140996B2 (en) 2005-11-16 2015-09-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8421996B2 (en) 2005-11-16 2013-04-16 Asml Netherlands B.V. Lithographic apparatus
US7804577B2 (en) 2005-11-16 2010-09-28 Asml Netherlands B.V. Lithographic apparatus
US9618853B2 (en) 2005-11-16 2017-04-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10126664B2 (en) 2005-11-16 2018-11-13 Asml Netherlands, B.V. Lithographic apparatus and device manufacturing method
US7803516B2 (en) 2005-11-21 2010-09-28 Nikon Corporation Exposure method, device manufacturing method using the same, exposure apparatus, and substrate processing method and apparatus
US7633073B2 (en) 2005-11-23 2009-12-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7928407B2 (en) 2005-11-23 2011-04-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8138486B2 (en) * 2005-11-23 2012-03-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7773195B2 (en) 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
US10061207B2 (en) 2005-12-02 2018-08-28 Asml Netherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US8003968B2 (en) 2005-12-27 2011-08-23 Asml Netherlands B.V. Lithographic apparatus and substrate edge seal
US8232540B2 (en) 2005-12-27 2012-07-31 Asml Netherlands B.V. Lithographic apparatus and substrate edge seal
JP2007180555A (en) * 2005-12-27 2007-07-12 Asml Netherlands Bv Exposure device and substrate edge sealing
US7420194B2 (en) 2005-12-27 2008-09-02 Asml Netherlands B.V. Lithographic apparatus and substrate edge seal
JP4675877B2 (en) * 2005-12-27 2011-04-27 エーエスエムエル ネザーランズ ビー.ブイ. Exposure apparatus and a substrate end seal
JP2010278475A (en) * 2005-12-27 2010-12-09 Asml Netherlands Bv Exposure apparatus and substrate edge seal
US8564760B2 (en) 2005-12-28 2013-10-22 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a control system
US8411271B2 (en) 2005-12-28 2013-04-02 Nikon Corporation Pattern forming method, pattern forming apparatus, and device manufacturing method
US7839483B2 (en) 2005-12-28 2010-11-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a control system
US8743339B2 (en) 2005-12-30 2014-06-03 Asml Netherlands Lithographic apparatus and device manufacturing method
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9851644B2 (en) 2005-12-30 2017-12-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8941810B2 (en) 2005-12-30 2015-01-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9436096B2 (en) 2005-12-30 2016-09-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10222711B2 (en) 2005-12-30 2019-03-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8947631B2 (en) 2005-12-30 2015-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7722267B2 (en) 2006-01-16 2010-05-25 Sokudo Co., Ltd. Substrate processing apparatus
KR100797666B1 (en) * 2006-01-16 2008-01-23 다이닛뽕스크린 세이조오 가부시키가이샤 Substrate processing apparatus
US10203613B2 (en) 2006-01-19 2019-02-12 Nikon Corporation Movable body drive method, movable body drive system, pattern formation method, pattern forming apparatus, exposure method, exposure apparatus, and device manufacturing method
US10185228B2 (en) 2006-01-19 2019-01-22 Nikon Corporation Movable body drive method, movable body drive system, pattern formation method, pattern forming apparatus, exposure method, exposure apparatus, and device manufacturing method
US10185227B2 (en) 2006-01-19 2019-01-22 Nikon Corporation Movable body drive method, movable body drive system, pattern formation method, pattern forming apparatus, exposure method, exposure apparatus, and device manufacturing method
US7839485B2 (en) 2006-01-19 2010-11-23 Nikon Corporation Movable body drive method, movable body drive system, pattern formation method, pattern forming apparatus, exposure method, exposure apparatus, and device manufacturing method
US10133195B2 (en) 2006-01-19 2018-11-20 Nikon Corporation Movable body drive method, movable body drive system, pattern formation method, pattern forming apparatus, exposure method, exposure apparatus, and device manufacturing method
US8134681B2 (en) 2006-02-17 2012-03-13 Nikon Corporation Adjustment method, substrate processing method, substrate processing apparatus, exposure apparatus, inspection apparatus, measurement and/or inspection system, processing apparatus, computer system, program and information recording medium
US10012913B2 (en) 2006-02-21 2018-07-03 Nikon Corporation Pattern forming apparatus and pattern forming method, movable body drive system and movable body drive method, exposure apparatus and exposure method, and device manufacturing method
US10139738B2 (en) 2006-02-21 2018-11-27 Nikon Corporation Pattern forming apparatus and pattern forming method, movable body drive system and movable body drive method, exposure apparatus and exposure method, and device manufacturing method
US9329060B2 (en) 2006-02-21 2016-05-03 Nikon Corporation Measuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure apparatus and method, and device manufacturing method
US10132658B2 (en) 2006-02-21 2018-11-20 Nikon Corporation Measuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure apparatus and method, and device manufacturing method
US9857697B2 (en) 2006-02-21 2018-01-02 Nikon Corporation Pattern forming apparatus, mark detecting apparatus, exposure apparatus, pattern forming method, exposure method, and device manufacturing method
US9989859B2 (en) 2006-02-21 2018-06-05 Nikon Corporation Measuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure apparatus and method, and device manufacturing method
US9690214B2 (en) 2006-02-21 2017-06-27 Nikon Corporation Pattern forming apparatus and pattern forming method, movable body drive system and movable body drive method, exposure apparatus and exposure method, and device manufacturing method
US10088759B2 (en) 2006-02-21 2018-10-02 Nikon Corporation Pattern forming apparatus and pattern forming method, movable body drive system and movable body drive method, exposure apparatus and exposure method, and device manufacturing method
US10088343B2 (en) 2006-02-21 2018-10-02 Nikon Corporation Measuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure apparatus and method, and device manufacturing method
US10234773B2 (en) 2006-02-21 2019-03-19 Nikon Corporation Pattern forming apparatus, mark detecting apparatus, exposure apparatus, pattern forming method, exposure method, and device manufacturing method
US8035800B2 (en) 2006-03-13 2011-10-11 Nikon Corporation Exposure apparatus, maintenance method, exposure method, and method for producing device
US9482967B2 (en) 2006-03-13 2016-11-01 Asml Netherlands B.V. Lithographic apparatus, control system and device manufacturing method
US8045134B2 (en) 2006-03-13 2011-10-25 Asml Netherlands B.V. Lithographic apparatus, control system and device manufacturing method
JP2007266186A (en) * 2006-03-28 2007-10-11 Nikon Corp Aligner, method of adjusting aligner, and method of manufacturing device
US9477158B2 (en) 2006-04-14 2016-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8902401B2 (en) 2006-05-09 2014-12-02 Carl Zeiss Smt Gmbh Optical imaging device with thermal attenuation
US9810996B2 (en) 2006-05-09 2017-11-07 Carl Zeiss Smt Gmbh Optical imaging device with thermal attenuation
US8477283B2 (en) 2006-05-10 2013-07-02 Nikon Corporation Exposure apparatus and device manufacturing method
US8570484B2 (en) 2006-08-30 2013-10-29 Nikon Corporation Immersion exposure apparatus, device manufacturing method, cleaning method, and cleaning member to remove foreign substance using liquid
US10101673B2 (en) 2006-08-31 2018-10-16 Nikon Corporation Movable body drive method and system, pattern formation method and apparatus, exposure method and apparatus for driving movable body based on measurement value of encoder and information on flatness of scale, and device manufacturing method
US9958792B2 (en) 2006-08-31 2018-05-01 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
US8947639B2 (en) 2006-08-31 2015-02-03 Nikon Corporation Exposure method and apparatus measuring position of movable body based on information on flatness of encoder grating section
US10067428B2 (en) 2006-08-31 2018-09-04 Nikon Corporation Movable body drive system and movable body drive method, pattern formation apparatus and method, exposure apparatus and method, device manufacturing method, and decision-making method
US10073359B2 (en) 2006-08-31 2018-09-11 Nikon Corporation Movable body drive system and movable body drive method, pattern formation apparatus and method, exposure apparatus and method, device manufacturing method, and decision-making method
US9983486B2 (en) 2006-08-31 2018-05-29 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
US8937710B2 (en) 2006-08-31 2015-01-20 Nikon Corporation Exposure method and apparatus compensating measuring error of encoder due to grating section and displacement of movable body in Z direction
US10162274B2 (en) 2006-08-31 2018-12-25 Nikon Corporation Movable body drive method and system, pattern formation method and apparatus, exposure method and apparatus for driving movable body based on measurement value of encoder and information on flatness of scale, and device manufacturing method
US9377698B2 (en) 2006-09-01 2016-06-28 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method
US9874822B2 (en) 2006-09-01 2018-01-23 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
US9760021B2 (en) 2006-09-01 2017-09-12 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method
US9846374B2 (en) 2006-09-01 2017-12-19 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method
US10289010B2 (en) 2006-09-01 2019-05-14 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
US9740114B2 (en) 2006-09-01 2017-08-22 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method
US9971253B2 (en) 2006-09-01 2018-05-15 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method
US10289012B2 (en) 2006-09-01 2019-05-14 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method
US9625834B2 (en) 2006-09-01 2017-04-18 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method
US10197924B2 (en) 2006-09-01 2019-02-05 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and calibration method
US7872730B2 (en) 2006-09-15 2011-01-18 Nikon Corporation Immersion exposure apparatus and immersion exposure method, and device manufacturing method
US8743341B2 (en) 2006-09-15 2014-06-03 Nikon Corporation Immersion exposure apparatus and immersion exposure method, and device manufacturing method
US7973910B2 (en) 2006-11-17 2011-07-05 Nikon Corporation Stage apparatus and exposure apparatus
US8749755B2 (en) 2006-11-17 2014-06-10 Nikon Corporation Stage apparatus and exposure apparatus
US8045135B2 (en) 2006-11-22 2011-10-25 Asml Netherlands B.V. Lithographic apparatus with a fluid combining unit and related device manufacturing method
US9330912B2 (en) 2006-11-22 2016-05-03 Asml Netherlands B.V. Lithographic apparatus, fluid combining unit and device manufacturing method
JP2008131045A (en) * 2006-11-22 2008-06-05 Asml Holding Nv Lithographic apparatus and device manufacturing method
US8013975B2 (en) 2006-12-01 2011-09-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8040490B2 (en) 2006-12-01 2011-10-18 Nikon Corporation Liquid immersion exposure apparatus, exposure method, and method for producing device
US8721803B2 (en) 2006-12-05 2014-05-13 Nikon Corporation Cleaning liquid, cleaning method, liquid generating apparatus, exposure apparatus, and device fabricating method
US9632425B2 (en) 2006-12-07 2017-04-25 Asml Holding N.V. Lithographic apparatus, a dryer and a method of removing liquid from a surface
US10185231B2 (en) 2006-12-07 2019-01-22 Asml Holding N.V. Lithographic apparatus, a dryer and a method of removing liquid from a surface
US10268127B2 (en) 2006-12-07 2019-04-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8634053B2 (en) 2006-12-07 2014-01-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9645506B2 (en) 2006-12-07 2017-05-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7791709B2 (en) 2006-12-08 2010-09-07 Asml Netherlands B.V. Substrate support and lithographic process
WO2008108253A3 (en) * 2007-02-23 2008-12-04 Katsushi Nakano Exposing method, exposure apparatus, device fabricating method, and substrate for immersion exposure
JP2010519722A (en) * 2007-02-23 2010-06-03 株式会社ニコン Exposure method, an exposure apparatus, device manufacturing method, and immersion exposure substrate
WO2008108253A2 (en) * 2007-02-23 2008-09-12 Nikon Corporation Exposing method, exposure apparatus, device fabricating method, and substrate for immersion exposure
US8947629B2 (en) 2007-05-04 2015-02-03 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US9013672B2 (en) 2007-05-04 2015-04-21 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US8164736B2 (en) 2007-05-29 2012-04-24 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US10101666B2 (en) 2007-10-12 2018-10-16 Nikon Corporation Illumination optical apparatus, exposure apparatus, and device manufacturing method
US9857599B2 (en) 2007-10-24 2018-01-02 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9341954B2 (en) 2007-10-24 2016-05-17 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9678332B2 (en) 2007-11-06 2017-06-13 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
JP2009152497A (en) * 2007-12-21 2009-07-09 Nikon Corp Liquid immersion system, exposure apparatus, exposure method, and device manufacturing method
US8891053B2 (en) 2008-09-10 2014-11-18 Asml Netherlands B.V. Lithographic apparatus, method of manufacturing an article for a lithographic apparatus and device manufacturing method
JP2009105470A (en) * 2009-02-18 2009-05-14 Panasonic Corp Semiconductor manufacturing device and pattern forming method
US8159065B2 (en) 2009-03-06 2012-04-17 Hynix Semiconductor Inc. Semiconductor package having an internal cooling system
US8358016B2 (en) 2009-03-06 2013-01-22 Hynix Semiconductor Inc. Semiconductor package having an internal cooling system
US9753378B2 (en) 2009-03-10 2017-09-05 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US9041902B2 (en) 2009-03-10 2015-05-26 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
WO2010103822A1 (en) * 2009-03-10 2010-09-16 株式会社ニコン Exposure apparatus, exposure method and device manufacturing method
JP2010093300A (en) * 2010-01-25 2010-04-22 Nikon Corp Flow path forming member, aligner and method for manufacturing device
US10209624B2 (en) 2010-04-22 2019-02-19 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method
US9256136B2 (en) 2010-04-22 2016-02-09 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method involving gas supply
US9846372B2 (en) 2010-04-22 2017-12-19 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method
CN103543611A (en) * 2012-07-16 2014-01-29 台湾积体电路制造股份有限公司 Lithography process
CN104216233A (en) * 2013-06-05 2014-12-17 中芯国际集成电路制造(上海)有限公司 Exposure method
CN103439869A (en) * 2013-09-02 2013-12-11 上海华力微电子有限公司 Method for measuring graphic density
CN104570615A (en) * 2013-10-29 2015-04-29 上海微电子装备有限公司 Scanning exposure device
US10310383B2 (en) 2017-08-28 2019-06-04 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method

Also Published As

Publication number Publication date
JP3817836B2 (en) 2006-09-06

Similar Documents

Publication Publication Date Title
KR100412174B1 (en) A catadioptric optical system and exposure apparatus
JP3567152B2 (en) Lithographic apparatus, device manufacturing method device manufactured, and by the method
US5677757A (en) Projection exposure apparatus
US5861997A (en) Catadioptric reduction projection optical system and exposure apparatus having the same
US7319508B2 (en) Projection exposure apparatus and method, catadioptric optical system and manufacturing method of devices
US6991877B2 (en) Exposure method and apparatus
US7088426B2 (en) Projection optical system adjustment method, prediction method, evaluation method, adjustment method, exposure method and exposure apparatus, program, and device manufacturing method
US20050140948A1 (en) Exposure apparatus and method
US20020008863A1 (en) Projection exposure apparatus
CN1309017C (en) Exposure method and device
EP0851304B1 (en) Projection exposure apparatus and device manufacturing method
US6117598A (en) Scanning exposure method with alignment during synchronous movement
US7760330B2 (en) Illumination optical system and exposure apparatus
US6934009B2 (en) Illumination apparatus, illumination-controlling method, exposure apparatus, device fabricating method
US7965387B2 (en) Image plane measurement method, exposure method, device manufacturing method, and exposure apparatus
US6975387B2 (en) Wavefront aberration measuring instrument, wavefront aberration measuring method, exposure apparatus, and method for manufacturing micro device
US20030025890A1 (en) Exposure apparatus and exposure method capable of controlling illumination distribution
US7068350B2 (en) Exposure apparatus and stage device, and device manufacturing method
US20020061469A1 (en) Projection apparatus, method of manufacturing the apparatus,method of exposure using the apparatus, and method of manufacturing circuit devices by using the apparatus
US6451507B1 (en) Exposure apparatus and method
US7215410B2 (en) Exposure apparatus
US6914665B2 (en) Exposure apparatus, exposure method, and device manufacturing method
US7042550B2 (en) Device manufacturing method and computer program
EP1956431A1 (en) Exposure apparatus, exposure method and device manufacturing method
US6788389B2 (en) Production method of projection optical system

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040609

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060206

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060214

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060414

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20060523

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20060605

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090623

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20170623

Year of fee payment: 11

EXPY Cancellation because of completion of term